An electrode layout structure for MEMS devices

Abstract

This invention relates to an electrode layout structure for MEMS devices, belonging to the field of microelectromechanical systems (MEMS) manufacturing technology. It includes a MEMS sensitive structure, a MEMS sensitive structure fixing anchor area, MEMS electrode leads, MEMS electrode ground plane areas, MEMS insulating layer contact holes, MEMS electrode lead-out pads, and MEMS electrode ground plane lead-out pads. The MEMS sensitive structure is fixed to a substrate through the MEMS sensitive structure fixing anchor area and connected to the MEMS electrode leads distributed on the substrate. Multiple metal layers are fabricated on the substrate, with insulating layers between each metal layer. MEMS electrode leads are fabricated in each metal layer, and the MEMS electrode leads in each layer pass through the insulating layer via MEMS insulating layer contact holes to achieve electrical connection. MEMS electrode ground plane areas are laid out in the areas outside the MEMS electrode leads in each metal layer. This invention effectively reduces electromagnetic interference and signal crosstalk, lowering the signal noise level.

Description

Technical Field

[0001] This invention relates to an electrode layout structure for MEMS devices, belonging to the field of microelectromechanical systems manufacturing technology. Background Technology

[0002] MEMS devices are a new type of micro-mechanical instrument that has been developed over the past two decades. They utilize semiconductor fabrication technology to fabricate micro-mechanical structures and electrodes. A typical MEMS device consists of a movable mass structure, an elastic beam, an anchor region, and electrodes. Through different structural designs, it is possible to measure physical quantities such as force, displacement, and angular velocity, meeting the needs of various applications.

[0003] Most MEMS devices convert the physical quantity to be measured into an analog electrical signal. During transmission, the analog electrical signal is easily affected by the external electromagnetic environment. Some MEMS devices have complex structures and contain multiple sets of electrode leads, which are prone to crosstalk between each other. Summary of the Invention

[0004] The technical problem solved by this invention is to overcome the shortcomings of the prior art and propose an electrode layout structure for MEMS devices. A large area of ​​ground plane is laid in the non-electrode and anchor areas of the metal layer where the MEMS electrode leads are located. The ground planes are interconnected through contact holes in the insulating layer. The ground planes of the MEMS electrodes are led out to the pads and connected to the power ground line, so as to effectively reduce electromagnetic interference and signal crosstalk, reduce signal noise level, and improve the performance of MEMS devices.

[0005] The solution of the present invention is:

[0006] A MEMS device electrode layout structure includes a MEMS sensing structure, a MEMS sensing structure fixing anchor area, MEMS electrode leads, a MEMS electrode ground plane area, MEMS insulating layer contact holes, MEMS electrode lead-out pads, and MEMS electrode ground plane lead-out pads.

[0007] The MEMS sensing structure is fixed to the substrate through the MEMS sensing structure fixing anchor area and connected to the MEMS electrode leads distributed on the substrate.

[0008] Multiple metal layers are fabricated on the substrate, with insulating layers between each metal layer; MEMS electrode leads are fabricated in each metal layer, and the MEMS electrode leads of each layer pass through the insulating layer through contact holes in the MEMS insulating layer to achieve electrical connection; MEMS electrode laying areas are laid in the areas outside the MEMS electrode leads in each metal layer.

[0009] MEMS electrode leads are connected to MEMS electrode lead-out pads, and MEMS electrode ground planes are connected to MEMS electrode ground plane lead-out pads.

[0010] Furthermore, there are two metal layers on the substrate, and the first layer of MEMS electrode leads and the first layer of MEMS electrode padding are fabricated on the first metal layer.

[0011] A second layer of MEMS electrode leads and a second layer of MEMS electrode padding are fabricated on the second metal layer.

[0012] Furthermore, there is an insulating layer between the two metal layers, in which MEMS insulating layer contact holes are distributed.

[0013] Furthermore, the first layer of MEMS electrode leads is connected to the MEMS sensitive structure through the fixed anchor area of ​​the MEMS sensitive structure, and is connected to the second layer of MEMS electrode leads through the contact holes of the MEMS insulating layer; the first layer of MEMS electrode laying area and the second layer of MEMS electrode laying area are connected through the contact holes of the MEMS insulating layer.

[0014] Furthermore, the MEMS electrode lead-out pads and MEMS electrode ground lead-out pads consist of two metal layers and are connected through MEMS insulating layer contact holes.

[0015] Furthermore, the MEMS electrode lead-out pads are connected to the first layer MEMS electrode leads or the second layer MEMS electrode leads.

[0016] Furthermore, the MEMS electrode ground plane leads are connected to the first MEMS electrode ground plane area and the second MEMS electrode ground plane area.

[0017] Furthermore, the first layer of MEMS electrode pads is distributed on the first metal layer, located in the area other than the first layer of MEMS electrode leads, the MEMS sensitive structure fixing anchor area, the MEMS electrode lead-out pads, and the MEMS electrode ground plane lead-out pads.

[0018] Furthermore, the second layer of MEMS electrodes is distributed on the second metal layer, located in the area other than the second layer of MEMS electrode leads, the MEMS sensitive structure fixing anchor area, the MEMS electrode lead-out pads, and the MEMS electrode ground plane lead-out pads.

[0019] Furthermore, the metal layer is at least one of tungsten, aluminum, titanium / gold composite layer, and chromium / gold composite layer; the insulating layer is at least one of silicon oxide layer, doped silicon oxide layer, silicon nitride layer, and silicon oxynitride layer.

[0020] Furthermore, the substrate is a glass sheet or a silicon wafer.

[0021] The beneficial effects of this invention compared to the prior art are:

[0022] This invention lays a large ground plane in the non-electrode and anchor areas of the metal layer where the MEMS electrode leads are located, and connects the ground planes to each other through contact holes in the insulating layer. The ground planes of the MEMS electrodes are led out to the pads and connected to the power ground line, so as to effectively reduce electromagnetic interference and signal crosstalk, reduce signal noise level, and improve the performance of MEMS devices. Attached Figure Description

[0023] Figure 1 This is a schematic diagram of an electrode layout structure for a MEMS device according to the present invention. Detailed Implementation

[0024] The present invention will be further described below with reference to the embodiments.

[0025] This invention addresses the problems of electromagnetic interference and signal crosstalk in analog electrical signals acquired by MEMS devices by proposing a new electrode layout structure for MEMS devices. For example... Figure 1 As shown:

[0026] A MEMS device electrode layout structure includes a MEMS sensitive structure, a MEMS sensitive structure fixing anchor area 1, multilayer MEMS electrode leads, multilayer MEMS electrode grounding area, multilayer MEMS insulating layer contact holes, MEMS electrode lead-out pads 5, and MEMS electrode grounding lead-out pads 6.

[0027] The MEMS sensitive structure is fixed to the substrate via a MEMS sensitive structure fixing anchor area 1 and connected to MEMS electrode leads distributed on the substrate. Multiple metal layers are fabricated on the substrate, with insulating layers between each metal layer. MEMS electrode leads are fabricated in each metal layer, and the MEMS electrode leads are electrically connected through contact holes in the insulating layer. MEMS electrode grounding areas are laid in the areas outside the MEMS electrode leads in each metal layer. The MEMS electrode leads are connected to MEMS electrode lead-out pads 5, and the MEMS electrode grounding areas are connected to MEMS electrode grounding lead-out pads 6.

[0028] The substrate has two metal layers, in which the first MEMS electrode lead 2, the first MEMS electrode ground plane 7, the second MEMS electrode lead 3, the second MEMS electrode ground plane 8, the MEMS electrode lead-out pad 5, and the MEMS electrode ground plane lead-out pad 6 are fabricated; there is an insulating layer between the two metal layers, in which MEMS insulating layer contact holes 4 are distributed.

[0029] The first layer MEMS electrode lead 2 is connected to the MEMS sensitive structure through the MEMS sensitive structure fixing anchor area 1, and is connected to the second layer MEMS electrode lead 3 through the MEMS insulating layer contact hole 4; the first layer MEMS electrode laying area 7 and the second layer MEMS electrode laying area 8 are connected through the MEMS insulating layer contact hole 4.

[0030] The MEMS electrode lead-out pad 5 and the MEMS electrode ground plane lead-out pad 6 each include two metal layers and are connected through the MEMS insulating layer contact hole 4. The MEMS electrode lead-out pad 5 is connected to the first layer MEMS electrode lead 2 or the second layer MEMS electrode lead 3. The MEMS electrode ground plane lead-out pad 6 is connected to the first layer MEMS electrode ground plane area 7 and the second layer MEMS electrode ground plane area 8.

[0031] The first layer of MEMS electrode padding area 7 is distributed on the first metal layer in the area excluding the first layer MEMS electrode lead 2, MEMS sensitive structure fixing anchor area 1, MEMS electrode lead-out pad 5, and MEMS electrode ground lead-out pad 6; the second layer of MEMS electrode padding area 7 is distributed on the second metal layer in the area excluding the second layer MEMS electrode lead 2, MEMS sensitive structure fixing anchor area 1, MEMS electrode lead-out pad 5, and MEMS electrode ground lead-out pad 6.

[0032] The metal layer is a tungsten, aluminum, titanium / gold composite layer, or chromium / gold composite layer; the insulating layer is a silicon oxide layer, a doped silicon oxide layer, a silicon nitride layer, or a silicon oxynitride layer. The substrate is a glass sheet or a silicon wafer; an insulating layer exists between the metal layer and the silicon wafer.

[0033] This invention involves laying a large ground plane over the non-electrode and anchor areas of the metal layer containing the MEMS electrode leads. The ground planes are interconnected through contact holes in the insulating layer, and pads are led out from the MEMS electrode ground planes to connect to the power and ground lines. Using this invention can effectively reduce electromagnetic interference and signal crosstalk, lower signal noise levels, and improve the performance of MEMS devices.

[0034] Although the present invention has been disclosed above with reference to preferred embodiments, it is not intended to limit the present invention. Any person skilled in the art can make possible changes and modifications to the technical solutions of the present invention by utilizing the methods and techniques disclosed above without departing from the spirit and scope of the present invention. Therefore, any simple modifications, equivalent changes and alterations made to the above embodiments based on the technical essence of the present invention without departing from the content of the technical solutions of the present invention shall fall within the protection scope of the technical solutions of the present invention.

Claims

1. A MEMS device electrode layout structure, characterized by, The MEMS sensitive structure, the MEMS sensitive structure fixed anchor area (1), the MEMS electrode lead, the MEMS electrode laying area, the MEMS insulating layer contact hole (4), the MEMS electrode lead-out pad (5) and the MEMS electrode laying area lead-out pad (6), The MEMS sensitive structure is fixed with the substrate sheet through the MEMS sensitive structure fixed anchor area (1) and is connected with the MEMS electrode lead distributed on the substrate sheet; The substrate sheet is prepared with multiple metal layers, and there is an insulating layer between each metal layer; the MEMS electrode lead is prepared in each metal layer, and each layer of the MEMS electrode lead passes through the MEMS insulating layer contact hole to pass through the insulating layer to realize electrical connection; the area outside the MEMS electrode lead in each metal layer is laid with the MEMS electrode laying area; The MEMS electrode lead is connected with the MEMS electrode lead-out pad (5), and the MEMS electrode laying area is connected with the MEMS electrode laying area lead-out pad (6); The substrate sheet has two metal layers, and the first layer of the MEMS electrode lead (2) and the first layer of the MEMS electrode laying area (7) are prepared on the first layer of the metal layer; The second layer of the MEMS electrode lead (3) and the second layer of the MEMS electrode laying area (8) are prepared on the second layer of the metal layer; The MEMS electrode laying area lead-out pad (6) is connected with the first layer of the MEMS electrode laying area (7) and the second layer of the MEMS electrode laying area (8); The first layer of the MEMS electrode laying area (7) is distributed on the first metal layer and is located in the area outside the first layer of the MEMS electrode lead (2), the MEMS sensitive structure fixed anchor area (1), the MEMS electrode lead-out pad (5), the MEMS electrode laying area lead-out pad (6).

2. The electrode layout structure for a MEMS device of claim 1, wherein, There is an insulating layer between the two metal layers, and the MEMS insulating layer contact hole (4) is distributed in the insulating layer.

3. The electrode layout structure for a MEMS device of claim 1, wherein, The first layer of the MEMS electrode lead (2) is connected with the MEMS sensitive structure through the MEMS sensitive structure fixed anchor area (1) and is connected with the second layer of the MEMS electrode lead (3) through the MEMS insulating layer contact hole (4); the first layer of the MEMS electrode laying area (7) is connected with the second layer of the MEMS electrode laying area (8) through the MEMS insulating layer contact hole (4).

4. The electrode layout structure for a MEMS device of claim 1, wherein The MEMS electrode lead-out pad (5) and the MEMS electrode laying area lead-out pad (6) include two metal layers and are connected through the MEMS insulating layer contact hole (4).

5. The electrode layout structure for a MEMS device of claim 1, wherein The MEMS electrode lead-out pad (5) is connected with the first layer of the MEMS electrode lead (2) or the second layer of the MEMS electrode lead (3).

6. The electrode layout structure for a MEMS device of claim 1, wherein, The second layer of the MEMS electrode laying area (7) is distributed on the second metal layer and is located in the area outside the second layer of the MEMS electrode lead (2), the MEMS sensitive structure fixed anchor area (1), the MEMS electrode lead-out pad (5), the MEMS electrode laying area lead-out pad (6).

7. The electrode layout structure for a MEMS device of claim 2, wherein, The metal layer is at least one of tungsten, aluminum, titanium / gold composite layer, chromium / gold composite layer; the insulating layer is at least one of silicon oxide layer, doped silicon oxide layer, silicon nitride layer, silicon oxynitride layer.

8. The electrode layout structure for a MEMS device of claim 1, wherein, The substrate sheet is a glass sheet or a silicon sheet.

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