A power loss simulation calculation method and simulation calculation system

By introducing a temperature feedback loop into the power device loss calculation model, a closed-loop feedback mechanism is built, which solves the simulation error problem caused by the unconsidered temperature impact, and achieves higher precision simulation calculation and resource optimization.

CN115577517BActive Publication Date: 2025-08-12FULSCIENCE AUTOMOTIVE ELECTRONICS CO LTD
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Patent Information

Application Number
CN202211200838.6
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2022-09-29
Publication Date
2025-08-12
Estimated Expiration
2042-09-29

AI Technical Summary

Technical Problem

The existing power device loss calculation model does not take into account the temperature influence, resulting in large errors in the simulation results.

Method used

By adding a temperature feedback loop design, combining the loss calculation model, the temperature calculation model and the system parameter calculation model, a closed-loop feedback mechanism is built to compensate parameter errors in the simulation process in real time and improve the simulation accuracy.

Benefits of technology

It improves the simulation accuracy of power loss, reduces the number of bench experiments, reduces the experimental costs, and improves the resource utilization rate of the project.

✦ Generated by Eureka AI based on patent content.

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Patent Text Reader

Abstract

The present application provides a power loss simulation calculation method and simulation calculation system, the simulation calculation method comprising: a loss calculation model determining current loss data based on the power device's own parameters, historical rounds of junction temperature data, and historical rounds of power factor; a temperature calculation model determining current junction temperature data based on the current loss data; a loss calculation model determining corrected loss data based on the power device's own parameters, current junction temperature data, and historical rounds of power factor; a system parameter calculation model determining efficiency data based on the corrected loss data and the power device's own parameters; and a data processing matrix performing matrix calculation based on the current junction temperature data, corrected loss data, and efficiency data to obtain a matrix simulation result for characterizing the power loss of the power device. According to the simulation calculation method and simulation calculation system, the simulation accuracy of power loss is improved.
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Description

Technical Field

[0001] The present application relates to the field of model simulation technology, and in particular to a simulation calculation method and a simulation calculation system for power loss. Background Art

[0002] During the design and development phase of power devices, simulation design of power devices is required in the early stage of design to estimate the power loss of power devices in working devices. The loss results obtained by simulation will be used for efficiency evaluation and thermal simulation parameter input.

[0003] The existing power device loss calculation model in China is based on Infineon's power device loss calculation model. This calculation model consists of three parts: parameter input, model calculation, and matrix calculation output. Power device parameters are derived from datasheets and experimental data provided by each power device, while simulation operating parameters are derived from operating parameters provided by the vehicle manufacturer. Power device losses are calculated using a power device loss algorithm. However, existing loss calculation models in China still have the following drawbacks: Because power devices are significant heat sources, their characteristic parameters are significantly affected by temperature. Current loss calculation models fail to account for the impact of temperature, resulting in significant errors in simulation results. Summary of the Invention

[0004] In view of this, the purpose of this application is to provide a power loss simulation calculation method and simulation calculation system, which improves the simulation accuracy of power loss by adding a temperature feedback loop design to compensate for parameter errors in the simulation process.

[0005] In a first aspect, an embodiment of the present application provides a power loss simulation calculation method, which is applied to a simulation calculation system, wherein the simulation calculation system includes a loss calculation model, a temperature calculation model, a system parameter calculation model, and a data processing matrix. The simulation calculation method includes:

[0006] The loss calculation model collects the parameters of any power device in the power module input by the external input source, the historical round junction temperature data generated by the temperature calculation model, and the historical round power factor generated by the system parameter calculation model, and determines the current loss data according to the parameters, the historical round junction temperature data, and the historical round power factor, and sends the current loss data to the temperature calculation model, wherein the historical round junction temperature data includes the historical round power device junction temperature and the historical round diode junction temperature;

[0007] The temperature calculation model receives the current loss data sent by the loss calculation model, determines current junction temperature data based on the current loss data, sends the current junction temperature data to the loss calculation model in a closed-loop feedback manner, and sends the current junction temperature data to the data processing matrix; wherein the current junction temperature data includes the current power device junction temperature and the current diode junction temperature;

[0008] The loss calculation model receives the current junction temperature data fed back by the temperature calculation model, determines corrected loss data based on its own parameters, the current junction temperature data, and the historical round power factor, sends the corrected loss data and its own parameters to the system parameter calculation model, and sends the corrected loss data to the data processing matrix;

[0009] The system parameter calculation model receives the corrected loss data and the own parameters sent by the loss calculation model, determines efficiency data based on the corrected loss data and the own parameters, and sends the efficiency data to the data processing matrix; wherein the efficiency data includes inverter efficiency and system efficiency;

[0010] The data processing matrix performs matrix calculation according to the current junction temperature data, the corrected loss data, and the efficiency data to obtain a matrix simulation result for characterizing the power loss of the power device.

[0011] Furthermore, the current loss data includes the current power device conduction loss, the current power device switching loss, the current diode conduction loss, and the current diode switching loss; the loss calculation model includes a power device loss calculation model and a diode loss calculation model; the loss calculation model determines the current loss data based on its own parameters, the historical round junction temperature data, and the historical round power factor, including:

[0012] The power device loss calculation model determines the current power device conduction loss and the current power device switching loss according to the own parameters, the historical round power device junction temperature, and the historical round power factor;

[0013] The diode loss calculation model determines the current diode conduction loss and the current diode switching loss according to the own parameters, the historical rounds of diode junction temperature, and the historical rounds of power factor.

[0014] Furthermore, the corrected loss data includes corrected power device conduction loss, corrected power device switching loss, corrected diode conduction loss, and corrected diode switching loss; the loss calculation model determines the corrected loss data based on its own parameters, the current junction temperature data, and the historical round power factor, including:

[0015] The power device loss calculation model determines the modified power device conduction loss and the modified power device switching loss according to the own parameters, the current power device junction temperature and the historical round power factor;

[0016] The diode loss calculation model determines the corrected diode conduction loss and the corrected diode switching loss according to the diode loss calculation model's own parameters, the current diode junction temperature, and the historical round power factor.

[0017] Furthermore, the simulation calculation system further includes a power device parameter correction model. After the temperature calculation model determines the current junction temperature data based on the current loss data, the simulation calculation method further includes:

[0018] The power device parameter correction model determines the on-state voltage drop of the power device according to the current junction temperature data;

[0019] The power device parameter correction model determines the on-state voltage drop, the forward on-state voltage and the on-resistance of the power device according to the on-state voltage drop, and sends the on-state voltage drop, the forward on-state voltage and the on-resistance of the power device to the power device loss calculation model;

[0020] The power device loss calculation model determines the modified power device on-state loss and the modified power device switching loss according to the power device on-state voltage drop, the forward conduction voltage, the on-resistance, the own parameters and the historical round power factor.

[0021] Furthermore, the loss calculation model also includes a power device terminal loss calculation model, and the simulation calculation method also includes:

[0022] The temperature calculation model determines the current power device terminal junction temperature in the power device according to the current loss data, and sends the current power device terminal junction temperature to the power device terminal loss calculation model;

[0023] The power device terminal loss calculation model determines the power device terminal loss according to the current power device terminal junction temperature and the power device terminal parameters.

[0024] Furthermore, after the temperature calculation model determines the current power device terminal junction temperature, the temperature calculation model is further used to:

[0025] Determining the number of power devices present in the power module and the ambient temperature in the power module;

[0026] The total temperature rise of the power module is determined according to the number of components, the ambient temperature, the corrected loss data, and the power component terminal loss.

[0027] In a second aspect, an embodiment of the present application further provides a power loss simulation calculation system, the simulation calculation system comprising:

[0028] A loss calculation model is used to collect the inherent parameters of any power device in the power module input from an external input source, the historical round junction temperature data generated by the temperature calculation model, and the historical round power factor generated by the system parameter calculation model, and determine current loss data based on the inherent parameters, the historical round junction temperature data, and the historical round power factor, and send the current loss data to the temperature calculation model; wherein the historical round junction temperature data includes the historical round power device junction temperature and the historical round diode junction temperature;

[0029] a temperature calculation model, configured to receive the current loss data sent by the loss calculation model, determine current junction temperature data based on the current loss data, send the current junction temperature data in a closed-loop feedback loop to the loss calculation model, and send the current junction temperature data to a data processing matrix; wherein the current junction temperature data includes the current power device junction temperature and the current diode junction temperature;

[0030] a loss calculation model, configured to receive the current junction temperature data fed back by the temperature calculation model, determine corrected loss data based on its own parameters, the current junction temperature data, and the historical round power factor, send the corrected loss data and its own parameters to the system parameter calculation model, and send the corrected loss data to the data processing matrix;

[0031] a system parameter calculation model, configured to receive the corrected loss data and the own parameters sent by the loss calculation model, determine efficiency data based on the corrected loss data and the own parameters, and send the efficiency data to the data processing matrix; wherein the efficiency data includes inverter efficiency and system efficiency;

[0032] A data processing matrix is used to perform matrix calculation based on the current junction temperature data, the corrected loss data, and the efficiency data to obtain a matrix simulation result for characterizing the power loss of the power device.

[0033] Furthermore, the current loss data includes the current power device conduction loss, the current power device switching loss, the current diode conduction loss and the current diode switching loss; the loss calculation model also includes:

[0034] a power device loss calculation model, configured to determine the conduction loss of the current power device and the switching loss of the current power device based on the power device's own parameters, the junction temperature of the power device in historical rounds, and the power factor in historical rounds;

[0035] The diode loss calculation model is used to determine the current diode conduction loss and the current diode switching loss based on the diode's own parameters, the historical rounds of diode junction temperature, and the historical rounds of power factor.

[0036] In a third aspect, an embodiment of the present application further provides an electronic device comprising: a processor, a memory and a bus, wherein the memory stores machine-readable instructions executable by the processor. When the electronic device is running, the processor and the memory communicate through the bus, and when the machine-readable instructions are executed by the processor, the steps of the power loss simulation calculation method as described above are performed.

[0037] In a fourth aspect, an embodiment of the present application further provides a computer-readable storage medium, on which a computer program is stored. When the computer program is executed by a processor, the steps of the power loss simulation calculation method as described above are executed.

[0038] The simulation calculation method and simulation calculation system of power loss provided in the embodiment of the present application, compared with the simulation method in the prior art, the present application uses motor torque, motor efficiency, line current, line voltage, bus voltage, and speed as external parameter input sources, in the form of mathematical modeling, combined with closed-loop feedback, to build a dynamic loss and temperature calculation model of the power device, and outputs matrix simulation data results through the powerful computing power of Matlab. The present application adds a temperature feedback loop design to compensate for parameter errors in the simulation process, thereby improving the simulation accuracy of power loss. And by evaluating the performance of the power device in the complete working condition process through the temperature calculation module, the power device evaluation can be performed using simulation priority, reducing the number of bench experiments, reducing experimental costs, and improving project resource utilization. In the simulation process, the various parameters in the calculation model can also be arbitrarily extracted as data accumulation and eigenvalue observation.

[0039] In order to make the above-mentioned objects, features and advantages of the present application more obvious and easy to understand, preferred embodiments are given below and described in detail with reference to the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0040] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the following is a brief introduction to the drawings required for use in the embodiments. It should be understood that the following drawings only show certain embodiments of the present application and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other relevant drawings can be obtained based on these drawings without creative work.

[0041] Figure 1 A flowchart of a power loss simulation calculation method provided in an embodiment of the present application;

[0042] Figure 2 A schematic diagram of the structure of a power loss simulation calculation system provided in an embodiment of the present application;

[0043] Figure 3 A schematic diagram of the structure of a loss calculation model provided in an embodiment of the present application;

[0044] Figure 4 A schematic diagram of the structure of an electronic device provided in an embodiment of the present application. DETAILED DESCRIPTION

[0045] In order to make the purpose, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all of the embodiments. The components of the embodiments of the present application generally described and shown in the drawings here can be arranged and designed in various different configurations. Therefore, the following detailed description of the embodiments of the present application provided in the drawings is not intended to limit the scope of the application for which protection is claimed, but merely represents the selected embodiments of the present application. Based on the embodiments of the present application, each other embodiment obtained by those skilled in the art without making creative work falls within the scope of protection of the present application.

[0046] First, the application scenarios to which this application is applicable are introduced. This application can be applied in the field of model simulation technology.

[0047] During the design and development phase of power devices, simulation design of power devices is required in the early stage of design to estimate the power loss of power devices in working devices. The loss results obtained by simulation will be used for efficiency evaluation and thermal simulation parameter input.

[0048] Research has revealed that the existing power device loss calculation model in China is based on Infineon's power device loss calculation model. This calculation model consists of three parts: parameter input, model calculation, and matrix calculation output. Power device parameters are derived from datasheets and experimental data provided by each power device, while simulation operating parameters are derived from operating parameters provided by the vehicle manufacturer. Power device losses are derived using a power device loss algorithm. However, existing loss calculation models in China still have the following flaws: Because power devices are significant heat sources, their characteristic parameters are significantly affected by temperature. Current loss calculation models fail to account for temperature influences, resulting in significant errors in simulation results.

[0049] Based on this, an embodiment of the present application provides a method for simulating and calculating power loss, which can improve the simulation accuracy of power loss.

[0050] See also Figure 1 , Figure 1 This is a flow chart of a power loss simulation calculation method provided in an embodiment of the present application. The simulation calculation method is applied to a simulation calculation system, which includes a loss calculation model, a temperature calculation model, a system parameter calculation model, and a data processing matrix.

[0051] like Figure 1 As shown in , the simulation calculation method provided by the embodiment of the present application includes:

[0052] S101, the loss calculation model collects the inherent parameters of any power device in the power module input by the external input source, the historical round junction temperature data generated by the temperature calculation model, and the historical round power factor generated by the system parameter calculation model, and determines the current loss data based on the inherent parameters, the historical round junction temperature data and the historical round power factor, and sends the current loss data to the temperature calculation model.

[0053] It should be noted that the loss calculation model is mainly used to calculate the loss of power devices and the loss of diodes. The self-parameters refer to the basic parameters of the power devices in the power module. According to the embodiment provided in the present application, the self-parameters of the power device can be basic parameters such as the motor torque, motor efficiency, line current, line voltage, bus voltage and speed of the power device. The historical round junction temperature data refers to the junction temperature data calculated by the temperature calculation model in the previous simulation round. Specifically, the historical round junction temperature data includes the historical round power device junction temperature of the power device and the historical round diode junction temperature of the diode in the power module. The historical round power factor refers to the power factor of the power device calculated by the system parameter calculation model in the previous simulation round.

[0054] For the above step S101, during the specific implementation, the loss calculation model collects the inherent parameters of any power device in the power module input by the external input source, the historical round junction temperature data generated by the temperature calculation model, and the historical round power factor generated by the system parameter calculation model, and determines the current loss data based on the inherent parameters of the power device, the historical round junction temperature data and the historical round power factor, and sends the current loss data to the temperature calculation model.

[0055] Specifically, the current loss data includes the current power device conduction loss, the current power device switching loss, the current diode conduction loss and the current diode switching loss, and the loss calculation model includes a power device loss calculation model and a diode loss calculation model.

[0056] With respect to the above step S101, the loss calculation model determines the current loss data based on the own parameters, the historical rounds of junction temperature data, and the historical rounds of power factor, including:

[0057] The power device loss calculation model determines the current power device conduction loss and the current power device switching loss according to the own parameters, the historical round power device junction temperature, and the historical round power factor.

[0058] It should be noted that the power device loss calculation model is mainly used to calculate the loss value of the power device.

[0059] During implementation of the above steps, the power device loss calculation model determines the current power device conduction loss and the current power device switching loss based on the power device's parameters, historical power device junction temperature, and historical power factor. Specifically, the power device loss calculation model primarily uses its own parameters, including line current, motor torque, and bus voltage, to calculate the loss value. The power device loss calculation model calculates the power device conduction loss and power device switching loss using the following formula.

[0060]

[0061]

[0062] Among them, P cond,IGBT Used to represent the conduction loss of power devices, P sw,IGBT Used to indicate power device switching loss.

[0063] The diode loss calculation model determines the current diode conduction loss and the current diode switching loss according to the own parameters, the historical rounds of diode junction temperature, and the historical rounds of power factor.

[0064] It should be noted that the diode loss calculation model is mainly used to calculate the loss value of the diode.

[0065] Regarding the above steps, during specific implementation, the diode loss calculation model determines the current diode conduction loss and the current diode switching loss based on the power device's own parameters, the historical diode junction temperature, and the historical power factor. Specifically, when calculating the loss value, the diode loss calculation model primarily uses the line current, motor torque, and bus voltage among its own parameters. The diode loss calculation model specifically calculates the diode conduction loss and diode switching loss using the following formula:

[0066]

[0067]

[0068] Among them, P cond,Diode Represents the diode conduction loss, P SW,Diode represents the diode switching loss.

[0069] S102, the temperature calculation model receives the current loss data sent by the loss calculation model, determines the current junction temperature data according to the current loss data, sends the current junction temperature data in a closed-loop feedback to the loss calculation model, and sends the current junction temperature data to the data processing matrix.

[0070] It should be noted that the temperature calculation module is primarily used to calculate the junction temperature of power devices and diodes. The current junction temperature data refers to the actual temperature data during the current simulation run. Specifically, the current junction temperature data includes the current power device junction temperature and the current diode junction temperature.

[0071] To address the lack of temperature compensation in existing calculation models, this application designs a temperature rise calculation module based on real-time losses. This module is added as a feedback loop to the power device input parameter calculation module, enabling real-time changes in input parameters due to temperature rise factors, thereby improving simulation accuracy. Regarding step S102 above, during implementation, the temperature calculation model receives the current loss data sent by the loss calculation model, determines the current power device junction temperature and the current diode junction temperature based on the current loss data, sends closed-loop feedback of the current junction temperature data to the loss calculation model, and sends the current junction temperature data to the data processing matrix.

[0072] S103, the loss calculation model receives the current junction temperature data fed back by the temperature calculation model, determines the corrected loss data based on its own parameters, the current junction temperature data and the historical round power factor, sends the corrected loss data and its own parameters to the system parameter calculation model, and sends the corrected loss data to the data processing matrix.

[0073] It should be noted that the corrected loss data refers to loss data obtained by correcting the current loss data using the current junction temperature data.

[0074] Regarding step S103, during implementation, the loss calculation model receives the current junction temperature data fed back by the temperature calculation model, determines corrected loss data based on its own parameters, the current junction temperature data, and the historical power factor, sends the corrected loss data and its own parameters to the system parameter calculation model, and then sends the corrected loss data to the data processing matrix. In this way, by adding a temperature feedback loop design, parameter errors during the simulation process can be compensated for, thereby improving simulation accuracy.

[0075] Specifically, the corrected loss data includes corrected power device conduction loss, corrected power device switching loss, corrected diode conduction loss, and corrected diode switching loss.

[0076] With respect to the above step S103, the loss calculation model determines the corrected loss data according to its own parameters, the current junction temperature data, and the historical round power factor, including:

[0077] The power device loss calculation model determines the modified power device conduction loss and the modified power device switching loss according to the own parameters, the current power device junction temperature and the historical round power factor.

[0078] Regarding the above steps, in specific implementations, after the temperature calculation model feeds the current power device junction temperature data back to the power device loss calculation model, the power device loss calculation model determines the corrected power device conduction loss and the corrected power device switching loss based on the power device's own parameters, the current power device junction temperature, and the historical power factor. Specifically, the calculation formulas for the corrected power device conduction loss and the corrected power device switching loss are the same as those in step S101 and are not further described here.

[0079] The diode loss calculation model determines the corrected diode conduction loss and the corrected diode switching loss according to the diode loss calculation model's own parameters, the current diode junction temperature, and the historical round power factor.

[0080] Regarding the above steps, in specific implementations, after the temperature calculation model feeds the current diode junction temperature data back to the diode loss calculation model, the power device loss calculation model determines the corrected diode conduction loss and corrected diode switching loss based on the power device's own parameters, the current diode junction temperature, and the historical power factor. Specifically, the calculation formulas for the corrected diode conduction loss and corrected diode switching loss are the same as those in step S102 and are not further described here.

[0081] S104, the system parameter calculation model receives the corrected loss data and the own parameters sent by the loss calculation model, determines efficiency data according to the corrected loss data and the own parameters, and sends the efficiency data to the data processing matrix.

[0082] It should be noted that the efficiency data includes inverter efficiency and system efficiency.

[0083] Regarding the above step S104, during the specific implementation, the system parameter calculation model receives the corrected loss data and its own parameters sent by the loss calculation model, determines the inverter efficiency and system efficiency based on the corrected loss data and its own parameters, and sends the calculated inverter efficiency and system efficiency to the data processing matrix.

[0084] S105 , the data processing matrix performs matrix calculation according to the current junction temperature data, the corrected loss data, and the efficiency data to obtain a matrix simulation result for characterizing the power loss of the power device.

[0085] It should be noted that the data processing matrix is mainly used to simulate the power loss of power devices. The matrix simulation results are mainly used to characterize the power loss of power devices.

[0086] Regarding the above step S105, in specific implementation, after receiving the current junction temperature data, the corrected loss data and the efficiency data, the data processing matrix can perform matrix calculation according to the above three parameters to obtain a matrix simulation result for characterizing the power loss of the power device.

[0087] As an optional embodiment, according to the simulation calculation method provided in the present application, the simulation calculation system further includes a power device parameter correction model. After the temperature calculation model determines the current junction temperature data based on the current loss data, the simulation calculation method further includes:

[0088] Step A: The power device parameter correction model determines the on-state voltage drop of the power device according to the current junction temperature data.

[0089] Regarding the above step A, in the specific implementation, the power device parameter correction model is mainly used to correct the internal parameters of the power device. After the temperature calculation module calculates the current junction temperature data, the power device parameter correction module can obtain any junction temperature T j Specifically, the power device parameter correction model calculates the on-state voltage drop using the following formula:

[0090]

[0091] Among them, Vceo_Tj Used to indicate the conduction voltage drop.

[0092] Step B: The power device parameter correction model determines the on-state voltage drop, forward conduction voltage and on-resistance of the power device according to the on-state voltage drop, and sends the on-state voltage drop, forward conduction voltage and on-resistance of the power device to the power device loss calculation model.

[0093] Regarding B above, in specific implementation, after the power device parameter correction model calculates the on-state voltage drop, it determines the power device on-state voltage drop, forward conduction voltage, and on-resistance based on the calculated on-state voltage drop. This allows the internal parameters of the power device after temperature correction to be obtained. The calculated power device on-state voltage drop, forward conduction voltage, and on-resistance are then sent to the power device loss calculation model. Specifically, the power device on-state voltage drop, forward conduction voltage, and on-resistance are calculated using the following three formulas:

[0094] V ceo =V ce_25 +K V,I (T j,I -25);

[0095] V F =V F_25 +K V,D (T j,D -25);

[0096] r D =r D_25 +K r,D (T j,D -25).

[0097] Among them, V ceo Used to represent the on-state voltage drop of power devices, V F Used to indicate the forward conduction voltage, r D Used to indicate on-resistance.

[0098] Step C: The power device loss calculation model determines the corrected power device on-state loss and the corrected power device switching loss according to the power device on-state voltage drop, the forward conduction voltage, the on-resistance, the self parameters and the historical round power factor.

[0099] With respect to the above-mentioned step C, during the specific implementation, the power device loss calculation model receives the power device on-state voltage drop, forward conduction voltage and on-resistance sent by the power device parameter correction model, and then determines the corrected power device on-state loss and the corrected power device switching loss based on the power device on-state voltage drop, forward conduction voltage, on-resistance, the power device's own parameters and the historical round power factor. During the specific implementation, for the internal parameters of the power device, the device parameters under the original algorithm remain unchanged, but as the temperature of the power device increases, the device's own parameters will undergo significant changes, and this change will accumulate and cause a larger error value. The simulation calculation method provided in this application uses an interpolation method to import the change in temperature rise into the device parameters, realize real-time compensation correction, and reduce the parameter error caused by temperature change. The corrected device parameters are then fed back to the loss calculation model, so that even in large data superposition calculations, no large accuracy error will be generated.

[0100] As an optional implementation, according to the simulation calculation method provided in this application, the loss calculation model also includes a power device terminal loss calculation model, and the simulation calculation method further includes:

[0101] (1) The temperature calculation model determines the current power device terminal junction temperature in the power device according to the current loss data, and sends the current power device terminal junction temperature to the power device terminal loss calculation model.

[0102] (2) The power device terminal loss calculation model determines the power device terminal loss based on the current power device terminal junction temperature and the power device terminal parameters.

[0103] In the specific implementation of the above steps (1) and (2), the temperature calculation model can also determine the current power device terminal junction temperature in the power device based on the current loss data, and send the current power device terminal junction temperature to the power device terminal loss calculation model. The power device terminal loss calculation model can determine the power device terminal loss based on the current power device terminal junction temperature and the power device's own parameters. Specifically, the power device terminal loss is calculated using the following formula:

[0104]

[0105] in, Used to indicate power device terminal losses.

[0106] As an optional implementation manner, after the temperature calculation model determines the current power device terminal junction temperature, the temperature calculation model is further used to:

[0107] Step I: Determine the number of power devices in the power module and the ambient temperature in the power module.

[0108] It should be noted that the number of devices refers to the number of power devices in the power module. For example, the number of power devices in the power module is 6, which is not specifically limited in this application.

[0109] Regarding the above step I, during specific implementation, the temperature calculation model determines the number of power devices in the power module and the ambient temperature in the power module.

[0110] Step II: Determine the total temperature rise of the power module according to the number of components, the ambient temperature, the corrected loss data, and the power component terminal loss.

[0111] Regarding step II above, in the specific implementation, the temperature calculation model can calculate the total temperature rise of the power module based on the number of power devices in the power module, the corrected loss data of the power devices, and the terminal loss of the power devices. In this way, the ambient temperature thermal resistance R is added to the temperature rise calculation. thch The changes in power devices make the calculation of temperature rise data more comprehensive. Specifically, continuing the embodiment in step I above, for example, if the number of power devices in the power module is 6, the total temperature rise of the power module is calculated using the following formula:

[0112] T h =T a +[6(P IGBT +P Diode )+P CC′+EE′ ]·R tha .

[0113] Among them, T h Used to indicate the total temperature rise of the power module, T a Used to indicate ambient temperature, R tha Indicates the thermal resistance value at ambient temperature.

[0114] The simulation calculation method of power loss provided in the embodiment of the present application is compared with the simulation method in the prior art. The present application uses motor torque, motor efficiency, line current, line voltage, bus voltage, and speed as external parameter input sources, and in the form of mathematical modeling, combines closed-loop feedback to build a dynamic loss and temperature calculation model of the power device, and outputs matrix simulation data results through the powerful computing power of Matlab. The present application adds a temperature feedback loop design to compensate for parameter errors in the simulation process, thereby improving the simulation accuracy of power loss. And by evaluating the performance of the power device in the complete working process through the temperature calculation module, the power device can be evaluated by simulation first, reducing the number of bench experiments, reducing experimental costs, and improving project resource utilization. In the simulation process, the various parameters in the calculation model can also be arbitrarily extracted as data accumulation and eigenvalue observation.

[0115] See also Figure 2 , Figure 2 This is a schematic diagram of the structure of a power loss simulation calculation system provided in an embodiment of the present application. Figure 2 As shown in , the simulation computing system 200 includes:

[0116] The loss calculation model 201 is used to collect the parameters of any power device in the power module input from an external input source, the historical rounds of junction temperature data generated by the temperature calculation model 202, and the historical rounds of power factor generated by the system parameter calculation model 204, and determine the current loss data based on the parameters, the historical rounds of junction temperature data, and the historical rounds of power factor, and send the current loss data to the temperature calculation model 202; wherein the historical rounds of junction temperature data include the historical rounds of power device junction temperature and the historical rounds of diode junction temperature;

[0117] The temperature calculation model 202 is configured to receive the current loss data sent by the loss calculation model 201, determine current junction temperature data based on the current loss data, send the current junction temperature data in a closed-loop feedback loop to the loss calculation model 201, and send the current junction temperature data to the data processing matrix; wherein the current junction temperature data includes the current power device junction temperature and the current diode junction temperature;

[0118] The loss calculation model 201 is configured to receive the current junction temperature data fed back by the temperature calculation model 202, determine corrected loss data based on its own parameters, the current junction temperature data, and the historical power factor, send the corrected loss data and its own parameters to the system parameter calculation model 203, and send the corrected loss data to the data processing matrix 204;

[0119] a system parameter calculation model 203, configured to receive the corrected loss data and the own parameters sent by the loss calculation model 201, determine efficiency data based on the corrected loss data and the own parameters, and send the efficiency data to the data processing matrix 204; wherein the efficiency data includes inverter efficiency and system efficiency;

[0120] The data processing matrix 204 is used to perform matrix calculation based on the current junction temperature data, the corrected loss data, and the efficiency data to obtain a matrix simulation result for characterizing the power loss of the power device.

[0121] See also Figure 3 , Figure 3 This is a schematic diagram of the structure of a loss calculation model provided in an embodiment of the present application. Figure 3 As shown, the current loss data includes the current power device conduction loss, the current power device switching loss, the current diode conduction loss and the current diode switching loss; the loss calculation model 201 also includes:

[0122] A power device loss calculation model 2011 is configured to determine the conduction loss of the current power device and the switching loss of the current power device based on the power device's own parameters, the historical power device junction temperature, and the historical power factor.

[0123] The diode loss calculation model 2012 is used to determine the current diode conduction loss and the current diode switching loss based on the diode's own parameters, the historical rounds of diode junction temperature, and the historical rounds of power factor.

[0124] Furthermore, the corrected loss data includes corrected power device conduction loss, corrected power device switching loss, corrected diode conduction loss and corrected diode switching loss;

[0125] The power device loss calculation model 2011 is further configured to determine the corrected power device conduction loss and the corrected power device switching loss based on the power device's own parameters, the current power device junction temperature, and the historical power factor.

[0126] The diode loss calculation model 2012 is further configured to determine the corrected diode conduction loss and the corrected diode switching loss based on its own parameters, the current diode junction temperature, and the historical round power factor.

[0127] Furthermore, the simulation calculation system 200 further includes a power device parameter correction model. After the temperature calculation model 202 determines the current junction temperature data according to the current loss data:

[0128] The power device parameter correction model is used to determine the on-state voltage drop of the power device according to the current junction temperature data;

[0129] The power device parameter correction model is further configured to determine the on-state voltage drop, the forward on-state voltage, and the on-resistance of the power device according to the on-state voltage drop, and send the on-state voltage drop, the forward on-state voltage, and the on-resistance of the power device to the power device loss calculation model 2011;

[0130] The power device loss calculation model 2011 is also used to determine the corrected power device on-state loss and the corrected power device switching loss based on the power device on-state voltage drop, the forward conduction voltage, the on-resistance, the own parameters and the historical round power factor.

[0131] Furthermore, the loss calculation model 201 also includes a power device terminal loss calculation model;

[0132] The temperature calculation model 202 is further configured to determine a current power device terminal junction temperature in the power device according to the current loss data, and send the current power device terminal junction temperature to the power device terminal loss calculation model;

[0133] The power device terminal loss calculation model is used to determine the power device terminal loss based on the current power device terminal junction temperature and the power device's own parameters.

[0134] Furthermore, after the temperature calculation model 202 determines the current power device terminal junction temperature, the temperature calculation model 202 is further configured to:

[0135] Determining the number of power devices present in the power module and the ambient temperature in the power module;

[0136] The total temperature rise of the power module is determined according to the number of components, the ambient temperature, the corrected loss data, and the power component terminal loss.

[0137] See also Figure 4 , Figure 4 This is a schematic diagram of the structure of an electronic device provided in an embodiment of the present application. Figure 4 As shown in FIG, the electronic device 400 includes a processor 410 , a memory 420 and a bus 430 .

[0138] The memory 420 stores machine-readable instructions executable by the processor 410. When the electronic device 400 is running, the processor 410 communicates with the memory 420 via the bus 430. When the machine-readable instructions are executed by the processor 410, the above-mentioned Figure 1 The steps of the power loss simulation calculation method in the illustrated method embodiment and the specific implementation thereof can be found in the method embodiment, which will not be described in detail here.

[0139] The embodiment of the present application also provides a computer-readable storage medium on which a computer program is stored. When the computer program is executed by a processor, the computer program can execute the above-mentioned Figure 1 The steps of the power loss simulation calculation method in the illustrated method embodiment and the specific implementation thereof can be found in the method embodiment, which will not be described in detail here.

[0140] Those skilled in the art will clearly understand that, for the convenience and brevity of description, the specific working processes of the systems, devices and units described above can refer to the corresponding processes in the aforementioned method embodiments and will not be repeated here.

[0141] In the several embodiments provided in this application, it should be understood that the disclosed systems, devices and methods can be implemented in other ways. The device embodiments described above are merely schematic. For example, the division of the units is merely a logical function division. There may be other division methods in actual implementation. For example, multiple units or components may be combined or integrated into another system, or some features may be ignored or not executed. Another point is that the mutual coupling or direct coupling or communication connection shown or discussed may be through some communication interface, indirect coupling or communication connection of devices or units, which may be electrical, mechanical or other forms.

[0142] The units described as separate components may or may not be physically separate, and the components shown as units may or may not be physical units, that is, they may be located in one place or distributed across multiple network units. Some or all of these units may be selected to achieve the purpose of this embodiment according to actual needs.

[0143] In addition, each functional unit in each embodiment of the present application may be integrated into one processing unit, or each unit may exist physically separately, or two or more units may be integrated into one unit.

[0144] If the functions are implemented in the form of software functional units and sold or used as independent products, they can be stored in a non-volatile computer-readable storage medium that is executable by a processor. Based on this understanding, the technical solution of the present application, or the part that contributes to the prior art, or the part of the technical solution, can be embodied in the form of a software product. The computer software product is stored in a storage medium and includes several instructions for enabling a computer device (which can be a personal computer, a server, or a network device, etc.) to execute all or part of the steps of the method described in each embodiment of the present application. The aforementioned storage medium includes various media that can store program codes, such as a USB flash drive, a mobile hard disk, a read-only memory (ROM), a random access memory (RAM), a magnetic disk or an optical disk.

[0145] It should be noted that similar numbers and letters represent similar items in the following figures. Therefore, once an item is defined in one figure, it does not need to be further defined and explained in subsequent figures. In addition, the terms "first", "second", "third", etc. are only used to distinguish the description and are not to be understood as indicating or implying relative importance.

[0146] Finally, it should be noted that the above-described embodiments are only specific implementation methods of the present application, which are used to illustrate the technical solutions of the present application, rather than to limit them. The scope of protection of the present application is not limited thereto. Although the present application has been described in detail with reference to the above-mentioned embodiments, those skilled in the art should understand that any person skilled in the art can modify or easily conceive of changes to the technical solutions described in the above-mentioned embodiments within the technical scope disclosed in the present application, or perform equivalent replacements for some of the technical features thereof. These modifications, changes, or replacements do not deviate from the spirit and scope of the technical solutions of the embodiments of the present application, and should be included in the scope of protection of the present application. Therefore, the scope of protection of the present application should be based on the scope of protection of the claims.

Claims

1. A method for simulating and calculating power loss, characterized in that: The simulation calculation method is applied to a simulation calculation system, which includes a loss calculation model, a temperature calculation model, a system parameter calculation model and a data processing matrix. The simulation calculation method includes: The loss calculation model collects the parameters of any power device in the power module input from an external input source, the historical round junction temperature data generated by the temperature calculation model, and the historical round power factor generated by the system parameter calculation model, and determines the current loss data based on the parameters, the historical round junction temperature data, and the historical round power factor, and sends the current loss data to the temperature calculation model; wherein the historical round junction temperature data includes the historical round power device junction temperature and the historical round diode junction temperature; The temperature calculation model receives the current loss data sent by the loss calculation model, determines current junction temperature data based on the current loss data, sends the current junction temperature data to the loss calculation model in a closed-loop feedback manner, and sends the current junction temperature data to the data processing matrix; wherein the current junction temperature data includes the current power device junction temperature and the current diode junction temperature; The loss calculation model receives the current junction temperature data fed back by the temperature calculation model, determines corrected loss data based on its own parameters, the current junction temperature data, and the historical round power factor, sends the corrected loss data and its own parameters to the system parameter calculation model, and sends the corrected loss data to the data processing matrix; The system parameter calculation model receives the corrected loss data and the own parameters sent by the loss calculation model, determines efficiency data based on the corrected loss data and the own parameters, and sends the efficiency data to the data processing matrix; wherein the efficiency data includes inverter efficiency and system efficiency; The data processing matrix performs matrix calculation according to the current junction temperature data, the corrected loss data, and the efficiency data to obtain a matrix simulation result for characterizing the power loss of the power device.

2. The simulation calculation method according to claim 1, characterized in that: The current loss data includes the current power device conduction loss, the current power device switching loss, the current diode conduction loss and the current diode switching loss; The loss calculation model includes a power device loss calculation model and a diode loss calculation model; The loss calculation model determines the current loss data based on the own parameters, the historical rounds of junction temperature data, and the historical rounds of power factors, including: The power device loss calculation model determines the current power device conduction loss and the current power device switching loss according to the own parameters, the historical round power device junction temperature, and the historical round power factor; The diode loss calculation model determines the current diode conduction loss and the current diode switching loss according to the own parameters, the historical rounds of diode junction temperature, and the historical rounds of power factor.

3. The simulation calculation method according to claim 2, characterized in that: The corrected loss data includes corrected power device conduction loss, corrected power device switching loss, corrected diode conduction loss and corrected diode switching loss; The loss calculation model determines the corrected loss data based on the own parameters, the current junction temperature data, and the historical round power factor, including: The power device loss calculation model determines the modified power device conduction loss and the modified power device switching loss according to the own parameters, the current power device junction temperature and the historical round power factor; The diode loss calculation model determines the corrected diode conduction loss and the corrected diode switching loss according to the diode loss calculation model's own parameters, the current diode junction temperature, and the historical round power factor.

4. The simulation calculation method according to claim 3, characterized in that: The simulation calculation system further includes a power device parameter correction model. After the temperature calculation model determines the current junction temperature data based on the current loss data, the simulation calculation method further includes: The power device parameter correction model determines the on-state voltage drop of the power device according to the current junction temperature data; The power device parameter correction model determines the on-state voltage drop, the forward on-state voltage and the on-resistance of the power device according to the on-state voltage drop, and sends the on-state voltage drop, the forward on-state voltage and the on-resistance of the power device to the power device loss calculation model; The power device loss calculation model determines the modified power device on-state loss and the modified power device switching loss according to the power device on-state voltage drop, the forward conduction voltage, the on-resistance, the own parameters and the historical round power factor.

5. The simulation calculation method according to claim 1, characterized in that: The loss calculation model also includes a power device terminal loss calculation model, and the simulation calculation method also includes: The temperature calculation model determines the current power device terminal junction temperature in the power device according to the current loss data, and sends the current power device terminal junction temperature to the power device terminal loss calculation model; The power device terminal loss calculation model determines the power device terminal loss according to the current power device terminal junction temperature and the power device terminal parameters.

6. The simulation calculation method according to claim 5, characterized in that: After the temperature calculation model determines the current power device terminal junction temperature, the temperature calculation model is further used to: Determining the number of power devices present in the power module and the ambient temperature in the power module; The total temperature rise of the power module is determined according to the number of components, the ambient temperature, the corrected loss data, and the power component terminal loss.

7. A power loss simulation calculation system, characterized in that: The simulation computing system comprises: A loss calculation model is used to collect the inherent parameters of any power device in the power module input from an external input source, the historical round junction temperature data generated by the temperature calculation model, and the historical round power factor generated by the system parameter calculation model, and determine current loss data based on the inherent parameters, the historical round junction temperature data, and the historical round power factor, and send the current loss data to the temperature calculation model; wherein the historical round junction temperature data includes the historical round power device junction temperature and the historical round diode junction temperature; a temperature calculation model, configured to receive the current loss data sent by the loss calculation model, determine current junction temperature data based on the current loss data, send the current junction temperature data in a closed-loop feedback loop to the loss calculation model, and send the current junction temperature data to a data processing matrix; wherein the current junction temperature data includes the current power device junction temperature and the current diode junction temperature; a loss calculation model, configured to receive the current junction temperature data fed back by the temperature calculation model, determine corrected loss data based on its own parameters, the current junction temperature data, and the historical round power factor, send the corrected loss data and its own parameters to the system parameter calculation model, and send the corrected loss data to the data processing matrix; a system parameter calculation model, configured to receive the corrected loss data and the own parameters sent by the loss calculation model, determine efficiency data based on the corrected loss data and the own parameters, and send the efficiency data to the data processing matrix; wherein the efficiency data includes inverter efficiency and system efficiency; A data processing matrix is used to perform matrix calculation based on the current junction temperature data, the corrected loss data, and the efficiency data to obtain a matrix simulation result for characterizing the power loss of the power device.

8. The simulation computing system according to claim 7, characterized in that: The current loss data includes the current power device conduction loss, the current power device switching loss, the current diode conduction loss and the current diode switching loss; The loss calculation model also includes: a power device loss calculation model, configured to determine the conduction loss of the current power device and the switching loss of the current power device based on the power device's own parameters, the junction temperature of the power device in historical rounds, and the power factor in historical rounds; The diode loss calculation model is used to determine the current diode conduction loss and the current diode switching loss based on the diode's own parameters, the historical rounds of diode junction temperature, and the historical rounds of power factor.

9. An electronic device, characterized in that: include: A processor, a memory and a bus, wherein the memory stores machine-readable instructions executable by the processor. When the electronic device is running, the processor and the memory communicate through the bus. When the processor is running, the machine-readable instructions execute the steps of the power loss simulation calculation method as described in any one of claims 1 to 6.

10. A computer-readable storage medium, characterized in that The computer-readable storage medium stores a computer program, and when the computer program is executed by a processor, the steps of the power loss simulation calculation method according to any one of claims 1 to 6 are executed.

Citation Information

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