Display panel, manufacturing method thereof and display device

Abstract

Embodiments of the present application provide a display panel, a manufacturing method thereof and a display device. The display panel comprises a substrate, a driving substrate on the substrate, the driving substrate comprising a first film layer, the first film layer comprising a first opening, a light emitting element on the driving substrate, the light emitting element corresponding to the first opening; wherein the driving substrate further comprises an auxiliary film layer, the auxiliary film layer comprising a thickening portion, a thinning portion or a hollow portion overlapping with the first opening. The present application further provides a display device comprising the display panel and a manufacturing method of the display panel. The reliability of the display panel can be improved by the present application.

Description

Technical Field

[0001] This application relates to the field of display technology, and more specifically, to display panels, methods of manufacturing the same, and display devices. Background Technology

[0002] With the continuous development of display technology, display panels have been widely used in people's production and daily life. However, there are still some technical problems with existing display panels that need to be solved, such as how to improve the reliability of display panels. Summary of the Invention

[0003] In view of this, the present invention provides a display panel and a display device.

[0004] The display panel provided by this invention includes:

[0005] Substrate;

[0006] A driving substrate located on a substrate, the driving substrate including a first film layer, the first film layer including a first opening;

[0007] A light-emitting element is located on the driving substrate, and the light-emitting element is disposed corresponding to the first opening;

[0008] The driving substrate further includes an auxiliary film layer, which includes a thickened portion, a thinned portion, or a hollowed-out portion that overlaps with the first opening.

[0009] The present invention also provides a display device comprising the above-described display panel.

[0010] The method for manufacturing a display panel provided in this embodiment of the invention includes the following steps:

[0011] A first film layer is formed on the driving substrate, the first film layer including a first opening;

[0012] An auxiliary film layer is formed, which covers the first film layer, and the auxiliary film layer includes a hollow portion that overlaps with the first opening;

[0013] A photoresist pattern is formed, wherein the photoresist pattern is located on the side of the auxiliary film layer away from the first film layer;

[0014] The photoresist pattern has through holes that overlap with the first opening;

[0015] An electrode layer is formed, the electrode layer including a first electrode portion and a second electrode portion, the first electrode portion covering the photoresist pattern, and the second electrode portion including a portion located within the first opening;

[0016] Remove the photoresist pattern and the first electrode portion;

[0017] A light-emitting element is provided, and the light-emitting element is transferred to a position above the driving substrate, wherein the light-emitting element includes a main body and a bonding electrode;

[0018] The light-emitting element is bonded to the second electrode portion, such that the bonding electrode and the second electrode portion form the electrode of the light-emitting element.

[0019] This application can improve the reliability of display panels. Attached Figure Description

[0020] Figure 1 This is a top view of the display panel provided in an embodiment of the present invention;

[0021] Figure 2 yes Figure 1 A magnified schematic diagram of a portion of the display area;

[0022] Figure 3 It is along Figure 2 A schematic diagram of a partial cross-section of the centerline AA';

[0023] Figure 4 It is along Figure 2 Another cross-sectional diagram of the centerline AA';

[0024] Figure 5 It is along Figure 2 Another cross-sectional diagram of the centerline AA';

[0025] Figure 6 This is an enlarged schematic diagram of a portion of the light-emitting element and display panel in this application;

[0026] Figure 7 Another enlarged schematic diagram of a portion of the light-emitting element and display panel in this application;

[0027] Figure 8 It is along Figure 2 Another cross-sectional diagram of the centerline AA';

[0028] Figure 9 This is a flowchart of a method for manufacturing a display panel according to an embodiment of the present invention;

[0029] Figure 10 This is a partial top view of the driving substrate provided in an embodiment of the present invention;

[0030] Figure 11 It is along Figure 10 A schematic cross-sectional view of the centerline BB';

[0031] Figure 12 It is along Figure 10 A schematic cross-sectional view of the centerline BB';

[0032] Figure 13 It is along Figure 10 A cross-sectional view of the display panel during another manufacturing process of the center line BB';

[0033] Figure 14 This is a partial top view after a photoresist layer has been formed on the driving substrate;

[0034] Figure 15 It is along Figure 14 A cross-sectional view of the centerline CC';

[0035] Figure 16 This is a schematic diagram of a structure in which a photoresist layer 400 is patterned to form a photoresist pattern 410;

[0036] Figure 17 This is a schematic diagram of the structure after the electrode layer is formed;

[0037] Figure 18 This is a schematic diagram of the structure after the photoresist pattern has been removed;

[0038] Figure 19 This is a schematic diagram of a transfer light-emitting element;

[0039] Figure 20 This is a schematic diagram of the bonding process between the light-emitting element and the driving substrate;

[0040] Figure 21 This is another schematic diagram of the transfer light-emitting element;

[0041] Figures 22-25 They are along Figure 2 Two other cross-sectional diagrams of the centerline AA';

[0042] Figure 26 This is a partial top view of the driving substrate provided in an embodiment of the present invention;

[0043] Figure 27 This is a cross-sectional schematic diagram of a display panel provided in an embodiment of the present invention;

[0044] Figure 28 This is a partial top view of the driving substrate provided in an embodiment of the present invention;

[0045] Figure 29 and Figure 30 They are Figure 1 Another enlarged schematic diagram of a portion of the display area;

[0046] Figure 31 It is along Figure 29 or Figure 30 A cross-sectional view of line DD' in the diagram;

[0047] Figures 32-38These are, respectively, a partial top-down magnified schematic diagram and related cross-sectional views of the display panel;

[0048] Figure 39 This is a schematic diagram of a display device provided in an embodiment of the present invention. Detailed Implementation

[0049] To make the above-mentioned objects, features and advantages of the present invention more apparent and understandable, the present invention will be further described below in conjunction with the accompanying drawings and embodiments.

[0050] It should be noted that specific details are set forth in the following description to provide a full understanding of the invention. However, the invention can be practiced in many ways other than those described herein, and those skilled in the art can make similar extensions without departing from the spirit of the invention. Therefore, the invention is not limited to the specific embodiments disclosed below.

[0051] The terminology used in the embodiments of this invention is for the purpose of describing particular embodiments only and is not intended to limit the invention. The singular forms “a,” “the,” and “the” as used in the embodiments of this invention and the appended claims are also intended to include the plural forms unless the context clearly indicates otherwise.

[0052] It should be noted that the directional terms such as "upper," "lower," "left," and "right" used in the embodiments of the present invention are used to describe the angles shown in the accompanying drawings and should not be construed as limiting the embodiments of the present invention. Furthermore, in the context, it should be understood that when it is mentioned that an element is formed "upper" or "lower" of another element, it can not only be formed directly "upper" or "lower" of the other element, but also indirectly "upper" or "lower" of the other element through an intermediate element.

[0053] Furthermore, the exemplary embodiments can be implemented in various forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided to make the invention more comprehensive and complete, and to fully convey the concept of the exemplary embodiments to those skilled in the art. The same reference numerals in the figures denote the same or similar structures, and therefore repeated descriptions of them will be omitted. Terms describing position and direction in this invention are illustrative based on the accompanying drawings, but changes can be made as needed, and all such changes are included within the scope of protection of this invention. The accompanying drawings of this invention are only used to illustrate relative positional relationships; the layer thicknesses of certain parts are exaggerated for ease of understanding, and the layer thicknesses in the drawings do not represent the actual proportional relationships of layer thicknesses. Moreover, the embodiments and features in the embodiments of this invention can be combined with each other unless otherwise specified. The accompanying drawings of the various embodiments in this application use the same reference numerals. Furthermore, the similarities between the various embodiments will not be repeated.

[0054] Please refer to Figure 1 and Figure 2 As shown, Figure 1 This is a top view of the display panel provided in an embodiment of the present invention. Figure 2 for Figure 1 A magnified schematic diagram of a portion of the display area. Figure 3 For along Figure 2 A schematic diagram of a partial cross-section of the centerline AA'; Figure 4 For along Figure 2 Another schematic diagram of the cross-section of the centerline AA'; the cross-section is perpendicular to the plane where the display panel is located.

[0055] Optionally, the display panel 100 is divided into a display area AA and a non-display area NA surrounding the display area AA. This is understandable. Figure 1 The dashed box in the middle is used to indicate the boundary between the display area AA and the non-display area NA. The display area AA is the area of ​​the display panel used to display the image, and it usually includes multiple pixels sp arranged in an array. Each pixel sp includes a corresponding light-emitting element (e.g., a diode) and a control element (e.g., a thin-film transistor that constitutes the pixel driving circuit). The non-display area NA surrounds the display area AA and usually includes peripheral driving elements, peripheral traces, and a fan-out area.

[0056] Optionally, the display panel 100 includes a substrate 210.

[0057] Optionally, the substrate 210 may be formed of a polymeric material such as glass, polyimide (PI), polycarbonate (PC), polyethersulfone (PES), polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polyaryl compounds (PAR), or glass fiber reinforced plastic (FRP). The substrate 210 may be transparent, translucent, or opaque.

[0058] Optionally, the substrate 210 can be flexible or rigid. It should be noted that, in the embodiments of this application, the phrase "a certain film layer is located on a certain reference film layer" can be understood as being located "on the side of the reference film layer away from the substrate". Unless otherwise specified, "on" only indicates the orientation relationship and does not mean that the two film layers are necessarily adjacent or in contact.

[0059] The driving substrate 200 is located on the side of the substrate 210 facing the display surface or touch surface of the display panel 100.

[0060] The driving substrate 200 can also drive the circuit layer 220, which is located on the substrate 210. For example... Figure 4 As shown, Figure 4 For along Figure 2 Another schematic cross-section of the centerline AA'. In some alternative embodiments, Figure 4 Can be used for illustration Figure 3The relevant structure of the driving circuit layer 220 in the middle.

[0061] Optionally, the driving circuit layer 220 may include structures such as thin-film transistors (TFTs), capacitors (C), and traces (L).

[0062] As an example, the film layers of the driving circuit layer 220 may include a buffer layer 221, an active pattern 222, a gate insulating layer 223, a gate 224, an intermediate dielectric layer 225, an interlayer dielectric layer 226, a source 227s, a drain 227d, and a passivation layer 228.

[0063] The buffer layer 221 prevents impurities such as oxygen and moisture from penetrating from the substrate 210 and can planarize the substrate 210. Furthermore, the buffer layer 221 can control the heat transfer rate during the annealing process used to form the active pattern 222. The buffer layer 221 may comprise a stacked structure composed of one or more inorganic materials such as silicon oxide, silicon nitride, and silicon oxynitride.

[0064] The driving circuit layer 220 may include multiple thin film transistors (TFTs) and pixel circuits composed of thin film transistors for light-emitting devices in the display layer.

[0065] This invention describes the structure of a top-gate thin-film transistor (TFT) as an example. The TFT layer includes an active pattern 222 located on a substrate 210. The active pattern 222 may include silicon semiconductor or oxide semiconductor.

[0066] Silicon semiconductors may include one or more of amorphous silicon, monocrystalline silicon, and polycrystalline silicon. As an example, active pattern 222 may include low-temperature polycrystalline silicon.

[0067] When the active pattern 222 uses polycrystalline silicon material, it can be formed using low-temperature amorphous silicon technology, that is, amorphous silicon material is melted by the laser to form polycrystalline silicon material. In addition, various methods such as rapid thermal annealing (RTA), solid-state crystallization (SPC), excimer laser annealing (ELA), metal-induced crystallization (MIC), metal-induced transverse crystallization (MILC), or continuous transverse curing (SLS) can also be used.

[0068] The active pattern 222 also includes a source region and a drain region formed by doping with N-type or P-type impurity ions, and a channel region between the source region and the drain region.

[0069] When the active pattern 222 includes an oxide semiconductor, the oxide semiconductor may include indium (In), zinc (Zn), gallium (Ga), tin (Sn), titanium (Ti), aluminum (Al), hafnium (Hf), zirconium (Zr), magnesium (Mg), etc. The active pattern 222 may include binary, ternary, or quaternary compounds. For example, the active pattern 222 may include indium gallium zinc oxide (IGZO), indium tin zinc oxide (ITZO), gallium zinc oxide (GaZnxOy), indium zinc oxide (IZO), zinc magnesium oxide (ZnMgxOy), zinc oxide (ZnOx), gallium oxide (GaOx), tin oxide (SnOx), indium oxide (InOx), indium gallium hafnium oxide (IGHO), tin aluminum zinc oxide (TAZO), indium gallium tin oxide (IGTO), etc. These can be used individually or in combination with each other. In exemplary embodiments of this disclosure, the oxide semiconductor described above may be doped with lithium (Li), sodium (Na), manganese (Mn), nickel (Ni), palladium (Pd), copper (Cu), carbon (C), nitrogen (N), phosphorus (P), titanium (Ti), zirconium (Zr), vanadium (V), ruthenium (Ru), germanium (Ge), tin (Sn), fluorine (F), etc.

[0070] Optionally, a gate insulating layer 223 is located on the active pattern 222. The gate insulating layer 223 includes an inorganic layer such as silicon oxide or silicon nitride, and may include a single layer or multiple layers.

[0071] Optionally, a gate 224 is located on the gate insulating layer 223. The gate 224 may comprise a single layer or multiple layers of gold (Au), silver (Ag), copper (Cu), nickel (Ni), platinum (Pt), palladium (Pd), aluminum (Al), molybdenum (MO), or chromium (Cr), or alloys such as aluminum (Al): neodymium (Nd) alloys and molybdenum (MO): tungsten (W) alloys.

[0072] An intermediate dielectric layer 225 covers the gate 224 and may be disposed on the gate insulating layer 223. The intermediate dielectric layer 225 may include a stacked structure composed of one or more inorganic materials such as silicon oxide, silicon nitride, and silicon oxynitride. As an example, the intermediate dielectric layer 225 may include silicon nitride.

[0073] The interlayer dielectric layer 226 can be disposed on the intermediate dielectric layer 225. The interlayer dielectric layer 226 may include a stacked structure composed of one or more inorganic materials such as silicon oxide, silicon nitride, and silicon oxynitride.

[0074] The source electrode 227s can contact the source region 222s of the active pattern 222, and the drain electrode 227d can contact the drain region 222d of the active pattern 222. The source electrode 227s and the drain electrode 227d can be formed in the same process and are located in the same film layer. As an example, a first contact hole CH1 exposing a portion of the source region 222s and a second contact hole CH2 exposing a portion of the drain region 222d can each be formed through a gate insulating layer 223, an intermediate dielectric layer 225, and an interlayer dielectric layer 226. The source electrode 227s can contact the upper surface of the source region 222s through the first contact hole CH1, and the drain electrode 227d can contact the upper surface of the drain region 222d through the second contact hole CH2. The source electrode 227s and the drain electrode 227d can include metals such as aluminum (Al), silver (Ag), chromium (Cr), titanium (Ti), tantalum (Ta), molybdenum (Mo), their alloys, their nitrides, conductive metal oxides, transparent conductive materials, etc. As an example, the source 227s and drain 227d may include a Ti / Ai / Ti metal stack structure.

[0075] Passivation layer 228 covers source 227s and drain 227d, and passivation layer 228 may be disposed on interlayer dielectric layer 226. Passivation layer 228 may comprise a stacked structure composed of one or more inorganic materials such as silicon oxide, silicon nitride, and silicon oxynitride. As an example, passivation layer 228 may comprise silicon nitride.

[0076] The capacitor C may include a first electrode CP1 and a second electrode CP2, which can be used to maintain the node potential in the driving circuit. The first electrode CP1 may be located between the gate insulating layer 223 and the intermediate dielectric layer 225, and is located on the same film layer as the gate 224, and may be formed of the same material as the gate 224. The second electrode CP2 may be located between the intermediate dielectric layer 225 and the interlayer dielectric layer 226, and the second electrode CP2 may include metals such as aluminum (Al), silver (Ag), chromium (Cr), titanium (Ti), tantalum (Ta), molybdenum (Mo), their alloys, their nitrides, conductive metal oxides, transparent conductive materials, etc. As an example, the second electrode CP2 may include molybdenum (Mo).

[0077] Trace L can be used to provide various signals. Figure 4 Taking the trace L located between the interlayer dielectric layer 226 and the passivation layer 228 as an example, the trace L can be located in the same film layer as the source electrode 227s and the drain electrode 227d, and can be made of the same material as the source electrode 227s and the drain electrode 227d. Depending on the type of signal transmitted by the trace L and the requirements, the trace L can be located in one or more other film layers. For example, the trace L can be located in the same film layer as the gate electrode 224, or the trace L can be located in the same film layer as the second electrode plate CP2, and so on.

[0078] Understandably, the driving circuit layer 220 includes a driving circuit for driving the light-emitting element 300 to emit light. As an example, the driving circuit includes a pixel circuit that is electrically connected to the light-emitting element 300 and is used to drive the light-emitting element 300 to emit light.

[0079] Please continue to refer to this. Figure 3 and Figure 4 As shown, the driving substrate 200 may further include a planarization layer 230. The planarization layer 230 may be located on the driving circuit layer 220, and can be used to form a planar surface on the driving circuit layer 220. As an example, the planarization layer 230 may be located on the passivation layer 228, and the side of the planarization layer 230 away from the passivation layer 228 has a substantially flat upper surface. The planarization layer 230 may include organic materials such as photoresist, polyacrylate resin, polyimide resin, polyamide resin, siloxane resin, acrylic resin, epoxy resin, etc.

[0080] Optionally, in some embodiments, the planarization layer 230 may include at least two layers, and other conductive layers or other metal layers may be disposed between the two planarization layers 230 to act as a transition or bridge for electrically connecting the thin film transistor TFT and the light-emitting element 300.

[0081] The driving circuit layer 220 is fabricated using a film layer stacking method. The active patterns 222, gate 224, source 227s, and drain 227d constituting the thin-film transistor (TFT), as well as the capacitor C and trace L patterns in the driving circuit layer 220, make the upper surface of the driving circuit layer 220 uneven. Additionally, through-holes (such as the first contact hole CH1 and the second contact hole CH2) penetrating the film layers also contribute to the unevenness of the upper surface of the driving circuit layer 220. The upper surface of the driving circuit layer 220 can be the upper surface of the passivation layer 228. By providing a planarization layer 230, a flat surface can be provided for subsequently fabricated components.

[0082] It should be noted that in some optional embodiments of this application, the auxiliary film layer 280 reuses the planarization layer 230.

[0083] Please continue to refer to this. Figure 4The driving substrate 200 may further include a connection portion 240. The connection portion 240 is disposed on the planarization layer 230 and includes a first connection portion 241 and a second connection portion 242. The first connection portion 241 is electrically connected to a thin-film transistor (TFT) in the driving circuit layer 220, and the second connection portion 242 is electrically connected to a power line. As an example, the first connection portion 241 may be electrically connected to the drain 227d of the TFT via a contact hole CH, wherein the contact hole CH penetrates the planarization layer 230 and the passivation layer 228, and exposes a portion of the drain 227d of the TFT. The connection portion 240 may include metals such as aluminum (Al), silver (Ag), chromium (Cr), titanium (Ti), tantalum (Ta), molybdenum (Mo), their alloys, their nitrides, conductive metal oxides, transparent conductive materials, etc. As an example, the connection portion 240 may include a Ti / Ai / Ti metal stack structure. The material of the connection part 240 can be the same as the material of the source 227s and the drain 227d.

[0084] To make full use of the metal film layer, the metal film layer where the connecting part 240 is located may also include other metal components, such as power lines, signal lines, electrical shielding components, light-shielding components, etc.

[0085] Optionally, the driving substrate 200 further includes a first film layer 250, which includes a first opening OP1. For example... Figure 3 and Figure 4 As shown, the first film layer 250 of the driving substrate 200 is located on the side of the driving circuit layer 220 away from the substrate 210, that is, the driving circuit layer 220 is located between the first film layer 250 and the substrate 210. The planarization layer 230 may be located between the first film layer 250 and the driving circuit layer 220. The connection portion 240 is located between the planarization layer 230 and the first film layer 250.

[0086] Optionally, the display panel 100 may also include a light-emitting element 300 located on the driving substrate 200, the light-emitting element being disposed corresponding to the first opening OP1.

[0087] In other words, the first opening OP1 defines the light-emitting element 300, and the light-emitting element 300 is at least partially located in the first opening OP1. In other words, in the first direction X, the first film layer 250 is at least partially located between two adjacent light-emitting elements 300, wherein the first direction X is a direction parallel to the plane of the display panel 100.

[0088] Optionally, the light-emitting element 300 can be a light-emitting diode, such as an inorganic light-emitting diode. The size of the light-emitting element 300 can be less than 200 micrometers. For example, the size of the light-emitting element 300 can be less than 100 micrometers, or less than 50 micrometers, etc.

[0089] You can refer to this. Figure 6 and Figure 7 As shown, Figure 6 This is an enlarged schematic diagram of a portion of the light-emitting element and display panel in this application. Figure 7 This is another enlarged schematic diagram of a portion of the light-emitting element and display panel in this application. Figure 6 and Figure 7 The diagram only shows a portion of the film layers in the driving substrate 200.

[0090] The light-emitting element 300 may include a main body 310 and a connecting electrode 320. The main body 310 may include an N-type semiconductor layer 311, a P-type semiconductor layer 312, and an active layer 313 located between the two.

[0091] The main body 310 of the light-emitting element 300 can be understood as the part of the light-emitting element 300 excluding the connecting electrode 320.

[0092] The material of the main body 310 of the light-emitting element 300 may include, but is not limited to, compound semiconductors such as gallium nitride (GaN), aluminum indium gallium phosphide (AlInGaP), aluminum gallium arsenide (AlGaAs), or gallium arsenide phosphide (GaAsP).

[0093] The connecting electrode 320 may include a first electrode 321 and a second electrode 322. The first electrode 321 is electrically connected to the P-type semiconductor layer 312, and the second electrode 322 is electrically connected to the N-type semiconductor layer 311. The first electrode 321 may be a positive electrode, and the second electrode 322 may be a negative electrode.

[0094] The connecting electrode 320 may include an alloy or solid solution of metals such as gold (Au), tin (Sn), nickel (Ni), titanium (Ti), aluminum (Al), silver (Ag), and indium (In). As an example, the connecting electrode 320 may include a gold-indium alloy.

[0095] The first electrode 321 and the second electrode 322 can both be located on the same side of the main body 310. For example, the first electrode 321 and the second electrode 322 are both located on the side of the N-type semiconductor layer 311 closest to the P-type semiconductor layer 312. In the film structure of the display panel, the first electrode 321 and the second electrode 322 can both be located on the side of the main body 310 facing the driving substrate 200. When transferring the light-emitting element 300 onto the driving substrate 200, it is convenient to realize the electrical connection between the light-emitting element 300 and the driving substrate 200 by thermoforming, such as by achieving bonding between the light-emitting element 300 and the driving substrate 200 through a eutectic bonding method.

[0096] The main body 310 may also include an insulating layer 314, which covers the N-type semiconductor layer 311, the P-type semiconductor layer 312 and the active layer 313 in the main body. The insulating layer 314 is provided with through holes to expose a portion of the N-type semiconductor layer 311 and a portion of the P-type semiconductor layer 312 respectively. At the through holes of the insulating layer 314, the first electrode 321 is electrically connected to the P-type semiconductor layer 312 and the second electrode 322 is electrically connected to the N-type semiconductor layer 311.

[0097] The main body 310 may also include a Bragg reflector layer, which may be located on the side of the P-type semiconductor layer 312 away from the N-type semiconductor layer 311, thereby improving the light emission efficiency of the light-emitting element 300 by reflecting light.

[0098] like Figure 7 As shown, the main body 310 of the light-emitting element 300 may also include a transparent electrode 315, which is located between the first electrode 321 and the P-type semiconductor layer 312. The transparent electrode 315 may be made of indium tin oxide (ITO) and can be used to adjust the current density distribution in different regions of the light-emitting element 300.

[0099] like Figure 7 As shown, micro-patterns can be provided on the upper surface of the light-emitting element 300. For example, a rough pattern can be provided on the upper surface of the N-type semiconductor layer 311, which is beneficial to improving the light extraction efficiency of the light-emitting element 300.

[0100] Please continue to refer to this. Figures 3-4 , Figures 6-7 As shown, optionally, the first opening OP1 of the first film layer 250 exposes the connection portion 240, and the connection electrode 320 of the light-emitting element 300 includes a first portion 320a located in the first opening OP1. The connection electrode 320 of the light-emitting element 300 contacts and is electrically connected to the connection portion 240, and the first portion 320a of the connection electrode 320 of the light-emitting element 300 contacts and is electrically connected to the connection portion 240.

[0101] Optionally, the connecting electrode 320 may fill the first opening OP1 of the first film layer 250. The first portion 320a of the connecting electrode 320 may fill the first opening OP1 of the first film layer 250. Specifically, the lower surface 320b of the connecting electrode 320 contacts the connecting portion 240.

[0102] The upper surface of the connector 240 may be roughened to increase the adhesion between the connector 240 and the first portion 320a of the connecting electrode 320.

[0103] The thickness of the first film layer 250 can be adjusted to improve the reliability between the light-emitting element 300 and the driving substrate 200.

[0104] The connecting electrode 320 may also include a second portion 320c located between the first portion 320a and the main body portion 310 of the light-emitting element 300.

[0105] Figure 6 and Figure 7 The first part 320a and the second part 320c of the first electrode 321 are illustrated. The first part 320a and the second part 320c of the second electrode 322 can be divided in the same way. That is, the second electrode 322 includes the first part 320a located at the first opening OP1 of the first film layer 250 and the second part 320c located between the first part 320a and the main body 310 of the light-emitting element 300.

[0106] In related technologies, the electrodes of the light-emitting element are directly disposed on the metal interconnect electrode. One end of the metal interconnect electrode is connected to the underlying thin-film transistor through a via in the film layer between the metal interconnect electrode and the thin-film transistor, while the electrode of the light-emitting element is located at the other end of the metal interconnect electrode. To avoid the uneven surface caused by the location of the via affecting the bonding process of the light-emitting element, a certain distance needs to be maintained between the end of the metal interconnect electrode located at the via and the end where the electrode of the light-emitting element is disposed. This results in a longer length of the metal interconnect electrode, which increases the reflectivity of the display panel and affects the display effect. In this application, by disposing the connection electrode 320 of the light-emitting element 300 at the first opening OP1 of the first film layer 250, the reflectivity of the display panel is reduced, and the display effect of the display panel is improved.

[0107] In an embodiment of the present invention, the shape of the first opening OP1 of the first film layer 250 is exemplified by a rectangle. The shape of the first opening OP1 of the first film layer 250 may also include other suitable shapes such as a circle.

[0108] Optionally, in some embodiments of this application, such as Figure 4As shown, the first electrode 321 of the light-emitting element 300 is electrically connected to the first connection portion 241, and is also electrically connected to the drain 227d of the thin-film transistor TFT through the first connection portion 241. The first connection portion 241 is connected to the thin-film transistor TFT through a contact hole CH that penetrates the planarization layer 230 and the passivation layer 228. The portion of the first connection portion 241 located at the contact hole CH generally does not have a flat surface, while the portion of the first connection portion 241 exposed by the first opening OP1 of the first film layer 250 needs to have a relatively flat surface to facilitate the bonding of the light-emitting element 300. In the direction perpendicular to the plane of the display panel 100, the contact hole CH may not overlap with the first opening OP1 of the first film layer 250, thereby avoiding the influence of the contact hole CH on the flat portion of the first connection portion 241. The distance between the portion of the first connection portion 241 located at the contact hole CH and the portion of the first connection portion 241 exposed by the first opening OP1 can be set as needed.

[0109] Please continue to refer to the relevant figures in this application. Optionally, the second electrode 322 of the light-emitting element 300 is electrically connected to the second connecting portion 242, and can be connected to the power line through the second connecting portion 242.

[0110] Optionally, the first film layer 250 includes an organic material. Specifically, the first film layer 250 may include photoresist, polyacrylate-based resin, polyimide-based resin, polyamide-based resin, siloxane-based resin, acrylic-based resin, and epoxy-based resin, etc. This design allows for the provision of a first opening OP1 with a certain depth, reducing the thickness requirements of the photoresist layer for subsequent patterning layers (the photoresist layer will be described below), thereby reducing process complexity. Simultaneously, the organic first film layer 250 can continue to provide a flat surface above the connecting portion 240, facilitating the smooth eutectic process between the second electrode portion 520 and the bonding electrode 330 (refer to the accompanying drawings relating to the above structure below, and related explanations will also follow), thus improving the reliability of electrode bonding.

[0111] Optional, such as Figure 8 As shown, Figure 8 For along Figure 2 Another schematic diagram of the cross-section of the centerline AA'; the cross-section is perpendicular to the plane where the display panel is located.

[0112] The first film layer 250 includes a negative photoresist. The inventors discovered that for the first film layer 250 formed using a negative photoresist, during the exposure process, the exposure amount varies at different thickness locations along its thickness direction, with the exposure amount decreasing further away from the exposure source. During development, locations with insufficient exposure are also easily removed, thereby forming an inclined sidewall in the first opening OP1 of the first film layer 250.

[0113] Optionally, the first film layer 250 is provided with a first opening OP1. Along the direction from the first film layer 250 to the light-emitting element 300, the sidewall OPW1 of the first opening OP1 is inclined toward the interior of the first opening OP1, that is, the area of ​​the top surface of the first opening OP1 (near the main body 310 of the light-emitting element 300) is smaller than the area of ​​the bottom surface of the first opening OP1 (near the connecting part 240).

[0114] The connecting electrode 320 of the light-emitting element 300 includes a first portion 320a that fills the first opening OP1. With the inclined setting of the side wall OPW of the first opening OP1, the ability of the driving substrate 200 to fix the light-emitting element 300 is improved, and the probability of the light-emitting element 300 falling off the driving substrate 200 is reduced.

[0115] Furthermore, in some optional processes, the photoresist layer of the subsequent patterning related film is also made of negative photoresist. In the case where both the first film layer 250 and the photoresist layer of the subsequent patterning related film are made of negative photoresist, a mask with the same light-shielding area pattern (such as the same mask) can be used to form the first film layer 250 and the related photoresist pattern, saving the mask manufacturing cost.

[0116] Please continue to refer to any cross-sectional view in this application. Optionally, the first film layer 250 includes a light-absorbing material. The first film layer 250 can be used to block light, reducing the reflectivity of the display panel by absorbing ambient light. For example, the first film layer 250 includes black pigment, meaning that the first film layer 250 is a black layer. As an example, the first film layer 250 can be black photoresist.

[0117] Optionally, except for the location where an opening (e.g., the first opening OP1) is provided, the other parts of the first film layer 250 can block light. It is understood that in some other optional embodiments of this application, the first film layer can also have other openings as needed, such as the second opening OP2 described below, and the location corresponding to the second opening OP2 can also be different.

[0118] Through this embodiment, on the one hand, the first film layer 250 can greatly reduce the problem of high reflectivity of the display panel caused by the metal components in the driving circuit layer 220; on the other hand, the first film layer 250 can also reduce the impact of ambient light on the performance of the components in the driving circuit layer 220, for example, preventing ambient light from incident on the thin-film transistor and causing light leakage in the thin-film transistor TFT; furthermore, the first film layer 250 can absorb the light emitted by the light-emitting element 300 downward (i.e. towards the substrate 210), preventing such light from being reflected by other components towards the display surface of the display panel and affecting the display effect.

[0119] It should be noted that in some optional embodiments of this application, the above embodiments can be combined. For example, the first film layer 250 can be a negative photoresist and may also include a light-absorbing material. In other words, the first film layer is an organic material, and / or the first film layer is a negative material, and / or the first film layer includes a light-absorbing material. The following combinations of non-contradictory embodiments still belong to the scheme described in this application, and will not be elaborated further.

[0120] Please continue to refer to the accompanying drawings of the cross-section of the display panel in this application and the corresponding top view. The driving substrate 200 also includes an auxiliary film layer 280, which may be located on one side of the first film layer 250 in the third direction Z, wherein the third direction Z is a direction perpendicular to the plane where the display panel 100 is located.

[0121] Optionally, the auxiliary film layer 280 includes a portion overlapping the first film layer 250, but the auxiliary film layer 280 has a structural change portion at the first opening OP1 of the first film layer 250. This structural change refers to the change in film thickness of the auxiliary film layer 280 in the third direction Z. It should also be noted that the thickness mentioned here includes the case where the thickness is zero. In other words, the auxiliary film layer 280 includes a first portion overlapping the first film layer 250, and also includes a second portion overlapping the first opening OP1 of the first film layer 250, with a step difference between the first portion and the second portion.

[0122] It should be noted that the "overlap" of the two structures described in this embodiment can be understood as the "overlap" of their orthogonal projections on the substrate 210 (i.e., orthogonal projections in the third direction Z).

[0123] In this embodiment, the auxiliary film layer has a thickness difference between the area corresponding to the first opening and the area not corresponding to the first opening. This makes it easier for the driving substrate at the first opening to align with the light-emitting element in terms of film layer structure compared to the area not corresponding to the first opening. Therefore, the auxiliary film layer provided in this embodiment improves the reliability of the alignment and bonding between the light-emitting element at the first opening and the driving substrate. This makes the alignment and bonding between the light-emitting element corresponding to the first opening and the driving substrate more convenient and the bonding more stable.

[0124] Optionally, the auxiliary film layer 280 may be adjacent to the first film layer 250. Optionally, the auxiliary film layer 280 may be in contact with the first film layer 250. This allows the structural changes in the auxiliary film layer 280 to be more directly reflected in the first opening OP1 of the first film layer 250, thereby better assisting in the alignment and bonding of the light-emitting element and the driving substrate, and improving the stability of the bonding.

[0125] Optionally, the auxiliary film layer 280 may include a thickened portion, and / or a thinned portion, and / or a hollowed-out portion that overlaps with the first opening OP1.

[0126] Optionally, when the auxiliary film layer 280 has a thinned portion or a perforated portion corresponding to the first opening OP1, such as... Figure 3 or Figure 5 As shown, where, Figure 5 For along Figure 2 Another cross-sectional view of the centerline AA'; the cross-section is perpendicular to the plane of the display panel. Optionally, the auxiliary film layer 280 may include, for example... Figure 4 The hollow portion 281-a overlapping the first opening OP1 shown, the auxiliary film layer 280 may further include, as shown in the figure, the auxiliary film layer 280. Figure 5 The thinned portion 282-b, which overlaps with the first opening OP1, can compensate for the depth of the first opening by reducing the thickness of the auxiliary film layer 280 at the thinned portion or the hollowed-out portion. This better guides the alignment of the light-emitting element, and after alignment, it better defines the light-emitting element, thereby improving the alignment stability between the light-emitting element and the driving substrate.

[0127] Optionally, when the auxiliary film layer 280 has a thickened portion corresponding to the first opening OP1, the light-emitting element can be raised by the thickened portion to improve alignment convenience. This will be explained in detail later.

[0128] like Figure 3 , Figure 5 or Figure 27 As shown, the auxiliary film layer 280 includes a first auxiliary layer 281 located on the side of the first film layer 250 opposite to the substrate 210; and / or,

[0129] The auxiliary film layer 280 includes a second auxiliary layer 282 located on the side of the first film layer 250 facing the substrate 210.

[0130] Optional, such as Figure 5 As shown, the auxiliary film layer 280 includes a second auxiliary layer 282 located on the side of the first film layer 250 facing the substrate 210. Optionally, the second auxiliary layer 282 may reuse the planarization layer 230 described above.

[0131] Optionally, the second auxiliary layer 282 may include multiple sublayers, such as a first sublayer 2821 and a second sublayer 2822 sequentially stacked along the direction from the substrate 210 toward the first film layer 250.

[0132] Optionally, the second auxiliary layer 282 includes a thinning portion 282-b. Specifically, the thinning portion 282-b of the second auxiliary layer 282 is formed by a groove with an opening facing the light-emitting element 300.

[0133] Optionally, when the second auxiliary layer 282 comprises multiple sub-layers, the groove is formed at least on the outer sub-layer of the second auxiliary layer 282 facing the light-emitting element, for example... Figure 5In the second sub-layer 2822. The groove can be a groove that does not penetrate the second auxiliary layer 282 or the second sub-layer 2822, or it can be a groove that penetrates the second auxiliary layer 282, or it can penetrate the second sub-layer 2822 and extend to other sub-layers, such as a groove that extends to the first sub-layer 2821 but does not penetrate the second auxiliary layer 282.

[0134] Optionally, the thinned portion 282-b of the second auxiliary layer 282 includes a groove with an opening facing the light-emitting element 300, and the thinned portion 282-b of the second auxiliary layer 282 can be etched together when the first connecting portion 241 and the second connecting portion 242 are patterned in the connecting portion 240.

[0135] Optionally, when the first connecting portion 241 and the second connecting portion 242 are patterned in the connecting portion 240, the area between the first connecting portion 241 and the second connecting portion 242 that are electrically connected to the same light-emitting element 300 can be over-etched to form the thinned portion 282-b of the second auxiliary layer 282.

[0136] In some optional embodiments of this application, the auxiliary film layer may simultaneously include a first auxiliary film layer and a second auxiliary layer, which cooperate and complement each other to further improve the reliability of the display panel. Some embodiments will also be illustrated in this application.

[0137] Optional, please refer to Figures 3-4 As shown, the auxiliary film layer 280 includes a first auxiliary film layer 281 located on the side of the first film layer 250 opposite to the substrate 210.

[0138] This design allows the first auxiliary layer 281 to have sufficient thickness for differentiated designs in areas requiring perforation or thickness variation. It also improves film reliability and simplifies the manufacturing process.

[0139] The following section will explain the manufacturing method of the display panel provided in this application.

[0140] Figure 9 A flowchart illustrating a method for manufacturing a display panel according to an embodiment of the present invention.

[0141] The following content will be combined Figures 9-21 The method for manufacturing the display panel provided in the embodiments of this application is described as follows:

[0142] Figure 10 This is a partial top view of the driving substrate provided in an embodiment of the present invention. Figure 11 For along Figure 10 A schematic cross-sectional view of the centerline BB'. Figure 12 For along Figure 10 A schematic cross-sectional view of the centerline BB'. Figure 11and Figure 12 Two examples of driving substrates are illustrated, and subsequent process steps are as follows: Figure 12 Taking the driving substrate as an example, it should be noted that the subsequent process steps also apply. Figure 11 The driving substrate shown.

[0143] First, as in step S101: a first film layer 250 is formed on the driving substrate 200, and a first opening OP1 is provided on the first film layer 250.

[0144] like Figure 11 and Figure 12 As shown, the driving substrate 200 may include a substrate 210, a circuit layer 260, an insulating layer 270, a connection portion 240, and a first film layer 250.

[0145] The circuit layer 260 may be located on the substrate 210, and the circuit layer 260 may include multiple signal lines for transmitting drive signals. Figure 11 Taking a driver substrate 200 that includes a single circuit layer 260 as an example. In other embodiments, the circuit layer 250 may include multiple layers to meet the requirements for the number and location of signal lines.

[0146] Insulation layer 270 can cover circuit layer 260.

[0147] The connecting part 240 can be disposed on the insulating layer 270 and can be electrically connected to the circuit layer 260 through the contact hole CH disposed on the insulating layer 270.

[0148] The first film layer 250 is located on the upper side of the driving substrate 200. The first film layer 250 is provided with a first opening OP1, which exposes the connection portion 240. The first opening OP1 can be used to receive a portion of the electrode layer that is subsequently formed.

[0149] like Figure 11 and Figure 12 As shown, the driving substrate 200 may include a substrate 210, a driving circuit layer 220, a planarization layer 230, and a first film layer 250. Figure 12 The driving substrate 200 in the middle can be referenced. Figure 4 The driving substrate 200 and its related descriptions are not repeated here.

[0150] The first opening OP1 of the first film layer 250 can be used to receive a portion of the subsequently formed electrode layer.

[0151] It should be noted that, in order to more clearly illustrate the structures closely related to each step, some reference numerals have been omitted in the relevant drawings for subsequent process steps. The omitted reference numerals can be referred to in other relevant drawings in this application.

[0152] S102: Form an auxiliary film layer 280, which covers the first film layer 250, and the auxiliary film layer 280 includes a hollow portion 281-a that overlaps with the first opening OP1.

[0153] like Figure 13 As shown, Figure 13 For along Figure 10 A cross-sectional view of the display panel during another manufacturing process of the center line BB'.

[0154] Optionally, the auxiliary film layer 280 is a first auxiliary layer 281. Regarding the auxiliary film layer in this embodiment, unless otherwise specified, the description of the first auxiliary layer 281 in other embodiments of this application can be referred to, and will not be repeated here.

[0155] Optionally, the first film layer 250 is provided with a first opening OP1, and the auxiliary film layer 280 (i.e. the first auxiliary layer 281) is provided with a hollow portion 281-a, with the first opening OP1 overlapping the hollow portion 281-a.

[0156] Optionally, the connecting electrode 320 includes a portion disposed within the first opening OP1 and the hollow portion 281-a.

[0157] Optionally, the auxiliary membrane layer 280 may cover the upper surface of the first membrane layer 250 and the sidewall of the first opening OP1 of the first membrane layer 250, that is, the auxiliary membrane layer 280 wraps the exposed surface of the first membrane layer 250.

[0158] Optionally, the portion of the connecting electrode 320 of the light-emitting element 300 located within the first opening OP1 is in contact with the auxiliary film layer 280.

[0159] like Figure 14 and Figure 15 As shown, Figure 14 This is a partial top view after a photoresist layer has been formed on the driving substrate. Figure 15 For along Figure 14 A cross-sectional view of the centerline CC'.

[0160] S103: Form a photoresist pattern 410, the photoresist pattern 410 is located on the side of the auxiliary film layer 280 away from the first film layer 250; the photoresist pattern 410 has a through hole 420 overlapping with the first opening OP1.

[0161] Optionally, a photoresist pattern 410 is formed, and the photoresist layer 400 is located on one side of the first film layer 250.

[0162] Optionally, a photoresist layer 400 is provided first. The photoresist layer 400 can be disposed entirely on the upper surface of the driving substrate 200. Specifically, the photoresist layer 400 is disposed on the first film layer 250, the photoresist layer 400 is in contact with the first film layer 250, and fills the first opening OP1 of the first film layer 250.

[0163] A photoresist pattern 410 is formed, and the photoresist pattern 410 has a through hole 420, which overlaps with the first opening OP1.

[0164] like Figure 16 As shown, Figure 16 This is a schematic diagram of a structure for patterning a photoresist layer 400 to form a photoresist pattern 410.

[0165] Optionally, the photoresist layer 400 can be patterned by exposure and development to form a photoresist pattern 410.

[0166] Specifically, a mask can be placed above the photoresist layer 400, and light passes through the mask to selectively expose the photoresist layer 400, making the exposed area of ​​the photoresist layer 400 a soluble substance, or making the exposed area of ​​the photoresist layer 400 an insoluble substance. The soluble substance in the photoresist layer 400 is removed by development to form a photoresist pattern 410.

[0167] The photoresist layer 400 can be made of negative photoresist. The exposed areas of the photoresist layer 400 become insoluble substances and are left during the development process, while the unexposed areas of the photoresist layer 400 are removed.

[0168] like Figure 17 As shown, Figure 17 This is a schematic diagram of the structure after the electrode layer is formed.

[0169] S104: Form an electrode layer 500, which includes a first electrode portion 510 and a second electrode portion 520. The first electrode portion 510 covers a photoresist pattern 410, and the second electrode portion 520 includes a portion located within the first opening OP1 and the cutout portion 281-a.

[0170] An electrode layer 500 can be formed above the photoresist pattern 410 by vapor deposition or physical vapor deposition. The electrode layer 500 includes a first electrode portion 510 and a second electrode portion 520. The first electrode portion 510 covers the photoresist pattern 410 (i.e., the portion of the photoresist layer 400 retained during development), and the second electrode portion 520 includes a portion located within the first opening OP1 of the first film layer 250.

[0171] Since the photoresist pattern 410 has a through-hole 420, and the through-hole 420 overlaps with the first opening OP1 of the first film layer 250, when the electrode layer 500 is formed by vapor deposition or physical vapor deposition, the electrode layer 500 includes not only the portion located on the photoresist pattern 410, but also the portion located within the first opening OP1 of the first film layer 250. Furthermore, by using a negative photoresist for the photoresist layer 400, a sidewall inclined towards the center of the through-hole 420 can be formed at the through-hole 420 of the photoresist pattern 410, making it easier for the second electrode portion 520 of the electrode layer 500 to separate from the first electrode portion 510 at the through-hole 420.

[0172] like Figure 18 As shown, Figure 18 This is a schematic diagram of the structure after the photoresist pattern has been removed.

[0173] S105: Remove the photoresist pattern 410 and the first electrode portion 510.

[0174] Optionally, the second electrode portion 520 includes a portion located at the first opening OP1 in the first film layer 250. The thickness of the second electrode portion 520 may be greater than the depth of the first opening OP1. That is, the second electrode portion 520 may also include a portion protruding from the upper surface of the first film layer 250.

[0175] Optionally, the second electrode portion 520 includes a portion located within the hollow portion 281-a. The second electrode portion 520 may also include a portion protruding from the hollow portion 281-a, or in other words, the second electrode portion 520 may also include a portion protruding from the upper surface of the first auxiliary film layer 281.

[0176] After removing Figure 17 The photoresist pattern 410 in the structure shown, together with the first electrode portion 510 located on the photoresist pattern 410, can be obtained as follows: Figure 18 The structure shown.

[0177] The photoresist pattern 410 and the first electrode portion 510 can be removed using a stripping solution. The sidewalls 410 of the photoresist pattern 410 are inclined, creating a gap between the sidewalls 410 and the second electrode portion 520, facilitating the flow of the stripping solution (e.g., ...). Figure 17 (As shown by the dashed arrow in the middle), thereby successfully removing the photoresist pattern 410 and the first electrode portion 510 located thereon.

[0178] like Figure 19 As shown, Figure 19 This is a schematic diagram of a light-emitting element.

[0179] S106: Provide a light-emitting element 300a and transfer the light-emitting element 300a to the top of the driving substrate 200, wherein the light-emitting element 300a includes a main body 310 and a bonding electrode 330.

[0180] The transfer device 600 transfers the light-emitting element 300a to a position above the driving substrate 200. The light-emitting element 300a can be additionally fabricated by processes such as epitaxial growth and patterning on the source substrate and placed above the driving substrate 200 by the transfer method.

[0181] The light-emitting element 300a includes a main body 310 and a bonding electrode 330. The structure of the main body 310 can be referred to Figure 6 and Figure 7 For related descriptions, please refer to [the relevant source]. Figure 19 The same parts will not be repeated.

[0182] The bonding electrode 330 may include a first bonding electrode 331 and a second bonding electrode 332. The first bonding electrode 331 is electrically connected to the P-type semiconductor layer 312, and the second bonding electrode 332 is electrically connected to the N-type semiconductor layer 311.

[0183] The bonding electrode 330 may include a single metal layer or a multilayer metal layer stack structure such as gold (Au) or indium (In). As an example, the bonding electrode 330 includes an indium (In) film layer.

[0184] The transfer device 600 may include a transfer head, a transfer substrate, etc. As an example, the transfer device 600 may be a stamp, which picks up multiple light-emitting elements 300a by van der Waals forces and releases the light-emitting elements 300a at a specific position to complete the transfer of the light-emitting elements 300a.

[0185] like Figure 20 As shown, Figure 20 This is a schematic diagram of the bonding process between the light-emitting element and the driving substrate.

[0186] S107: Bond the light-emitting element 300a to the second electrode portion 520, so that the bonding electrode 330 and the second electrode portion 520 form the connection electrode 320 of the light-emitting element 300.

[0187] The bonding electrode 330 of the light-emitting element 300a comes into contact with the second electrode portion 520 located on the driving substrate 200, and a eutectic reaction occurs at a certain temperature, causing the bonding electrode 330 and the second electrode portion 520 to crystallize into a crystalline mixture (eutectic), thus forming... Figure 20The light-emitting element 300 in the light-emitting element has a connecting electrode 320 (first electrode 321 and second electrode 322). As an example, the second electrode portion 520 includes gold (Au), the bonding electrode 330 includes indium (In), and the connecting electrode 320 of the light-emitting element 300 formed by the eutectic reaction of the second electrode portion 520 and the bonding electrode 330 is a gold-indium alloy.

[0188] During the bonding process, the second electrode portion 520 melts and is squeezed, making it prone to flow. By placing it within the first opening OP1, the range of its flow to the surrounding area is reduced, thus preventing a short circuit from occurring when the first electrode 321 and the second electrode 322 come into contact.

[0189] Combination Figure 9 and Figure 21 Another embodiment of the method for manufacturing a display panel provided in this invention will be described. Figure 21 This is another schematic diagram of the transfer of light-emitting elements.

[0190] Steps S101-S103 and S105 can be described as before. The process of steps S104, S106 and S107 is explained as follows:

[0191] S104: Form an electrode layer 500, which includes a first electrode portion 510 and a second electrode portion 520. The first electrode portion 510 covers a photoresist pattern 410, and the second electrode portion 520 includes a portion located within the first opening OP1.

[0192] In this step, the electrode layer 500 includes a stacked first metal and a second metal, such as the first metal being gold (Au) and the second metal being indium (In).

[0193] S106: Provide a light-emitting element 300b and transfer the light-emitting element 300b to the top of the driving substrate 200, wherein the light-emitting element 300b includes a main body portion 310.

[0194] S107: Bond the light-emitting element 300b to the second electrode portion 520, so that the second electrode portion 520 forms the connection electrode 320 of the light-emitting element 300.

[0195] In this step, the stacked first and second metals in the second electrode portion 520 undergo a eutectic reaction to form a gold-indium alloy, which serves as the connecting electrode 320 of the light-emitting element 300. Simultaneously, during this bonding process, the main body portion 310 of the light-emitting element 300b also comes into contact with the second electrode portion 520, forming a fixed electrical connection.

[0196] The inventors discovered that during the process of removing the photoresist pattern 410 and the first electrode portion 510 using a stripping solution, the stripping solution also flows into the gap between the sidewall of the photoresist pattern 410 and the second electrode portion 520.

[0197] If the structure of the first auxiliary layer 281 is not provided, the first film layer 250 is exposed in the gap. The stripping solution comes into contact with the first film layer 250 in the gap, causing the black photoresist constituting the first film layer 250 to fade and become ineffective.

[0198] A first auxiliary layer 281 is provided, which covers the exposed surface of the first film layer 250 and isolates the first film layer 250 from the stripping solution. This prevents the stripping solution from contacting the first film layer 250 and being corroded by the solution when removing the photoresist pattern 410, thereby avoiding fading and failure of the first film layer 250.

[0199] Optionally, the first auxiliary layer 281 can be made of a material resistant to the effects of peeling solutions.

[0200] Optionally, the first auxiliary layer 281 has a higher density than the first film layer. For example, the first auxiliary layer 281 can be made of a molecular-level film material. This design improves the ability of the first auxiliary layer 281 to protect the first film layer from the effects of the peeling agent.

[0201] Optionally, the first auxiliary layer 281 overlaps at least partially with the sidewall of the first opening OP1.

[0202] It is understood that the "overlapping" direction mentioned in this embodiment is a direction perpendicular to the plane containing the sidewall of the first opening OP1. Optionally, the auxiliary film layer 280 can cover the upper surface of the first film layer 250 and the sidewall of the first opening OP1 of the first film layer 250, that is, the auxiliary film layer 280 wraps the exposed surface of the first film layer 250. In other words, the first auxiliary layer 281 covers the sidewall of the first opening OP1. Through this embodiment, the effect of the first auxiliary layer 281 in preventing the drug solution from invading the first film layer 250 can be further improved.

[0203] Optional, such as Figure 10 As shown, the first auxiliary layer 281 includes a cutout portion 281-a, which is located within the coverage area of ​​the first opening OP1. Optionally, the portion of the connecting electrode 320 of the light-emitting element 300 located within the first opening OP1 contacts the auxiliary film layer 280. That is, the first auxiliary layer 281 contacts the film layer on the side of the first film layer 250 exposed by the first opening OP1 that is away from the first auxiliary layer 281, thereby encapsulating the first film layer 250 at the first opening OP1 with the film layers on its adjacent sides. This can further improve the effect of the first auxiliary layer 281 in preventing liquid medicine from entering the first film layer 250.

[0204] Optionally, in some embodiments, the first auxiliary layer may be a positive photoresist.

[0205] Optionally, the first auxiliary layer 281 may include an organic material.

[0206] On one hand, optionally, the first auxiliary layer 281 includes organic materials such as acrylic, polyimide (PI), or benzocyclobutene (BCB); the first auxiliary layer 281 has a planarization effect. A flat surface can be provided on the first film layer to facilitate subsequent processes. For example, in some embodiments, it can facilitate the smooth eutectic process between the second electrode portion and the bonding electrode, improving the reliability of electrode bonding.

[0207] On the other hand, such as Figure 22 As shown, Figure 22 For along Figure 2 Another schematic diagram of the cross-section of the centerline AA'; the cross-section is perpendicular to the plane where the display panel is located.

[0208] Optionally, the display panel also includes an encapsulation layer 700 for encapsulating the light-emitting element 300. The encapsulation layer 700 may include encapsulating adhesive 710, which may cover the driving substrate 200 and the light-emitting element 300.

[0209] Further research by the inventors revealed that in embodiments where the first film layer 250 includes a light-absorbing material, the first film layer 250 can reduce the reflectivity of the display panel. After adding the first auxiliary layer 281, an interface between the first auxiliary layer 281 and the encapsulating adhesive 710 is added to the display panel. The added interface can easily lead to an increase in reflectivity, which hinders the achievement of the goal of reducing the reflectivity of the display panel by using the first film layer 250.

[0210] Based on this, the inventors attempted to include a silicon oxide layer in the first auxiliary layer 281. The refractive index of the silicon oxide layer is similar to that of the material of the encapsulation layer 700. For example, the refractive index of the silicon oxide layer is similar to that of the encapsulant 710, which reduces the interface reflection between the first auxiliary layer 281 and the encapsulant 710 and can improve the problem of increased reflectivity caused by the large difference in refractive index.

[0211] In other words, during the research process, the inventors tried to make the first auxiliary layer with inorganic materials and found that in order to ensure the light output effect, if inorganic materials were used to make the first auxiliary layer, then SiO2 with a refractive index close to that of glass would be required.

[0212] However, further research by the inventors revealed that the bonding ability of the first film layer formed by SiO2 and organic materials is poor. Specifically, when a silicon oxide layer is directly deposited on the first film layer 250, the silicon oxide layer is prone to cracking and peeling. Therefore, a silicon nitride layer needs to be added between the silicon oxide layer and the first film layer 250. The silicon nitride layer can act as a transition between the two, improving the bonding performance between the silicon oxide layer of the first auxiliary layer 281 and the first film layer 250, and preventing film separation.

[0213] Therefore, the first auxiliary layer for the formation of the inorganic layer requires two sub-film layers, which increases the manufacturing cost.

[0214] Furthermore, the inorganic layer requires CVD deposition followed by dry etching to form the desired pattern, such as the aforementioned hollow portion. Therefore, the first auxiliary layer formed by the silicon oxide and silicon nitride layers requires at least two CVD deposition processes. In contrast, in this embodiment, the first auxiliary layer formed by the organic material only requires photolithography to form a patterned film layer. This simplifies the process and reduces costs.

[0215] Furthermore, due to material and process limitations, the formation of silicon oxide and silicon nitride layers can contaminate the chamber during film patterning. However, this application avoids the contamination of the chamber by the aforementioned film patterning, greatly promoting mass production.

[0216] Alternatively, the same photomask can be used to form both the auxiliary film layer and the photoresist pattern. This is because the first auxiliary layer formed from organic material only requires photolithography to form a patterned film layer. The photoresist mask for subsequent patterned films can be reused, meaning a photomask with the same light-shielding area pattern (e.g., the same photomask) can be used, saving on photomask manufacturing costs. For example, the first auxiliary layer can be formed on the same mask as the photoresist pattern 410.

[0217] Optionally, the display panel includes a second auxiliary layer 282 as described in this application, which is a film layer formed of organic material. The first auxiliary layer 281 contacts the second auxiliary layer 281 on the side of the first film layer 250 exposed at the first opening OP1 that is opposite to the first auxiliary layer 281, thereby encapsulating the first film layer 250 at the first opening OP1 with organic film layers on both its adjacent sides. Furthermore, the first auxiliary layer 281 and the second auxiliary layer 281 formed by the organic film layer have better bonding performance, which can further improve the effect of preventing liquid medicine from invading the first film layer 250.

[0218] Optionally, in some embodiments, the first auxiliary layer may be a positive photoresist.

[0219] Optionally, the thickness of the first film layer 250 is d2, the thickness of the first auxiliary layer 281 is d1, and the sum of the thickness of the first film layer 250 d2 and the thickness of the first auxiliary layer 281 d1 is H, where H = d1 + d2.

[0220] It should be noted that d1 here refers to the thickness of the portion of the first auxiliary layer 281 covering the first auxiliary layer 281, and the thickness direction is the third direction Z.

[0221] Optionally, the sum of the thickness of the first film layer 250 and the thickness of the first auxiliary layer 281, H ≤ 4 μm.

[0222] This avoids the opening formed by the first opening and the hollowed-out portion being too deep, thus preventing the light-emitting element from being unable to make contact with the electrode 240 (i.e. the connecting portion 240) on the driving substrate for electrical connection.

[0223] Optionally, the driving substrate includes a plurality of electrodes exposed by the first opening, and the plurality of electrodes respectively correspond to different cutout portions.

[0224] Specifically, the electrode 240 is the connecting portion 240 described above (in this application, the electrode and the connecting portion share the same designation 240). The connecting portion 240 includes a first connecting portion 241 and a second connecting portion 242. The first connecting portion 241 and the second connecting portion 242 form the plurality of electrodes. The first connecting portion 241 and the second connecting portion 242 respectively correspond to different cutout portions 281-a.

[0225] Optionally, multiple hollow sections 281-a can correspond to the same first opening OP1.

[0226] Optionally, the electrodes exposed by the same first opening OP1 correspond to different cutout portions 281-a, that is, the first connecting portion 241 and the second connecting portion 242 of the same light-emitting element 300 correspond to different cutout portions 281-a.

[0227] Optionally, a cutout 281-a exposes an electrode 240.

[0228] Optionally, the second electrode portion 520 includes a portion located within the cutout portion 281-a of the first auxiliary layer 281.

[0229] Optionally, the second electrode portion 520 may also include a portion protruding from the hollow portion 281-a, or the second electrode portion 520 may also include a portion protruding from the upper surface of the first auxiliary film layer 281.

[0230] In this embodiment, on the one hand, the exposed electrode and the second electrode portion 520 can be defined by the hollow portion formed by the auxiliary film layer 280.

[0231] Alternatively, the first film layer 250 may include a light-absorbing material. The first film layer 250 can be used for light blocking, reducing the reflectivity of the display panel by absorbing ambient light. Optionally, the first film layer 250 may be doped with black nanoparticles.

[0232] Optionally, the first auxiliary layer 281 is a light-transmitting material.

[0233] Optionally, the resolution of the first auxiliary layer 281 is higher than that of the first film layer 250, thereby improving the patterning accuracy of the first auxiliary layer.

[0234] Since the first film layer is a light-absorbing or light-shielding material, it often contains black nanoparticles, resulting in low patterning precision and making it difficult to accurately define openings that correspond one-to-one with the electrodes. In this embodiment, the first auxiliary layer 281 can be patterned with more precise opening patterns, improving the reliability of the alignment between the light-emitting element and the driving substrate. In other words, the first auxiliary layer 281 is retained around the electrodes, forming grooves, and the eutectic layer sinks into the organic film formed by the first auxiliary layer 281, which can improve the problem of light-emitting element detachment.

[0235] Optionally, the density of the first auxiliary layer 281 is higher than that of the first film layer 250.

[0236] Optionally, the density of the first auxiliary layer 281 is higher than that of the second auxiliary layer 282.

[0237] like Figures 6-7 ,or Figures 22-23 As shown, and in conjunction with the relevant accompanying drawings. Among them, Figure 22 and Figure 23 respectively along Figure 2 Other schematic diagrams of cross-sections of the centerline AA'; the cross-sections are perpendicular to the plane of the display panel.

[0238] Optionally, the driving substrate 200 includes a plurality of electrodes 240 exposed by the first opening OP1, and the first auxiliary layer 281 includes a spacer 288 located between the electrodes 240.

[0239] This embodiment can avoid the short circuit problem caused by the eutectic layer metal flowing outwards under high temperature and external pressure.

[0240] Specifically, the electrode 240 is the connection part 240 described above.

[0241] Optionally, a first opening OP1 exposes multiple electrodes 240, that is, at least two electrodes 240 are exposed by the same first opening OP1. Here, "exposed" can be understood as the orthographic projection of the at least two electrodes 240 on the substrate overlapping with the orthographic projection of the same first opening OP1 on the substrate.

[0242] Optionally, at least two electrodes 240 exposed by the same first opening OP1 are electrically connected to the same light-emitting element 300.

[0243] Optionally, the connecting portion 240 includes a first connecting portion 241 and a second connecting portion 242. The first connecting portion 241 and the second connecting portion 242 form the plurality of electrodes 240. The first connecting portion 241 and the second connecting portion 242 corresponding to the same light-emitting element 300 respectively correspond to different cutout portions 281-a.

[0244] like Figure 22 and Figure 23 As shown, the distance from the top surface of the spacer 288 to the electrode is L, where L ≤ 4 μm. In this embodiment, during photolithography of the first auxiliary layer 281, the first auxiliary layer 281 is retained between the electrodes 240 corresponding to the light-emitting element 300, with only the electrode 240 positions exposed. After photolithography of the first auxiliary layer 281, the height L from the upper surface of the first auxiliary layer 281 between the electrodes 240 is ≤ 2 μm. This avoids the spacer from contacting the light-emitting element during alignment and bonding with the driving substrate, thus ensuring that the spacer does not affect the bonding of the light-emitting element when short-circuiting.

[0245] Optionally, L≤2um to fully ensure compatibility with light-emitting elements of various sizes.

[0246] It should be noted that, in this application, "top surface" refers to the surface of the structure facing the light-emitting surface of the display panel 100. For example, the electrode spacer 288 includes two surfaces opposite each other in the third direction Z, which are the bottom surface facing the substrate 210 and the top surface facing the light-emitting element 300, respectively. The top surface of the electrode 240 is similar and will not be described again.

[0247] like Figure 22 and Figure 23 As shown, optionally, the thickness h of the spacer is greater than the thickness d1 of the first auxiliary layer 281 located in the upper region of the first film layer. This allows the spacer to effectively prevent eutectic layer overflow.

[0248] Optionally, a portion of the first auxiliary layer 281 located on the first film layer 250 may be made of the same material and manufactured using the same process as the spacer portion 288.

[0249] Optionally, a portion of the first auxiliary layer 281 located on the first membrane layer 250 is continuous with the spacer portion 288.

[0250] The inventors discovered that because the portion of the first auxiliary layer 281 located on the first film layer 250 has a higher elevation position than the portion of the first auxiliary layer 281 located in the first opening OP1, and because the first auxiliary layer 281 is an organic material, it has fluidity. The same material has a higher thickness at a lower elevation position; therefore, a thicker spacer portion can be fabricated using the same process. It can be understood that the higher elevation position here can also be interpreted as a greater distance from the substrate in the third direction Z.

[0251] like Figure 22 and Figure 23 As shown, optionally, the sum of the thicknesses of the first film layer and the first auxiliary layer is H, and the thickness of the spacer portion is h, where h ≤ 1 / 2 * H.

[0252] That is, the top of the spacer portion 288 of the first auxiliary layer 281 is lower than the top of the non-spacer portion region of the first auxiliary layer 281. In some embodiments, such as Figure 22 As shown, the thickness h of the spacer refers to the distance h1 from the bottom surface to the top surface of the spacer 288 in the third direction Z; in some embodiments, such as Figure 23 As shown, the thickness h of the spacer portion refers to the distance h2 from the top surface of the spacer portion 288 to the top surface of the electrode.

[0253] This embodiment can prevent the spacer from lifting the light-emitting element while ensuring that the spacer fully blocks the eutectic layer overflow. It also prevents the spacer from contacting the light-emitting element when the light-emitting element is aligned and bonded to the driving substrate, thus ensuring that the bonding of the light-emitting element is not affected when the spacer is short-circuited.

[0254] Optionally, the thickness of the first film layer 250 is d2, the thickness of the first auxiliary layer 281 is d1, and the sum of the thicknesses d2 and h1 of the first film layer 250 and the first auxiliary layer 281 is H, where H = d1 + d2. It should be noted that d1 here refers to the thickness of the portion of the first auxiliary layer 281 covering it, i.e., the non-spaced region of the first auxiliary layer 281. The thickness direction is the third direction Z.

[0255] Optionally, the sum of the thickness of the first film layer 250 and the thickness of the first auxiliary layer 281, H ≤ 4 μm.

[0256] This embodiment avoids the opening formed by the first opening and the hollowed-out portion being too deep, thus preventing the light-emitting element from being unable to make contact with the electrode 240 (i.e., the connecting portion 240) on the driving substrate for electrical connection.

[0257] like Figure 24 As shown, Figure 24 For along Figure 2 Other schematic diagrams of cross-sections of the centerline AA'; the cross-sections are perpendicular to the plane of the display panel.

[0258] Optionally, the width of the spacer is D, where D ≤ 5 μm. The direction of the width is the direction from the electrode adjacent to one side of the spacer to the electrode adjacent to the other side, i.e., parallel to the line connecting the electrodes 240 on adjacent sides of the spacer 288.

[0259] Optionally, the distance between electrodes 240 corresponding to the same light-emitting element 300 is 3 to 4 μm.

[0260] Optionally, the width of the spacer is greater than the distance between the electrodes 240 corresponding to the same light-emitting element 300.

[0261] In this embodiment, the size of the spacing portion needs to be coordinated with the electrode settings. Considering factors such as increasing pixel density or reducing electrode space occupation, the distance between electrodes is often not large. This requires the spacing portion to meet precision requirements. However, the first film layer, which needs to improve display performance, cannot simultaneously achieve both improved display performance and high resolution. Therefore, this embodiment utilizes the first auxiliary layer to form the required spacing portion. Furthermore, the first auxiliary layer not only performs the aforementioned functions but also meets the design precision requirements. This embodiment also provides a first auxiliary layer size design that meets both the manufacturing constraints of the first auxiliary layer and matches the electrode size, improving the reliability of the display panel without increasing the manufacturing difficulty.

[0262] like Figure 25 As shown, Figure 25 For along Figure 2 Another schematic diagram of the cross-section of the centerline AA'; the cross-section is perpendicular to the plane where the display panel is located.

[0263] The second auxiliary layer 282 has a thinning portion 282-b, and the spacer portion 288 overlaps with the thinning portion 282-b. For details regarding the thinning portion 282-b, please refer to the relevant description in the above embodiments.

[0264] Optionally, the first auxiliary layer 281 and the second auxiliary layer 282 are in contact in the first opening OP1, as described in the above embodiment regarding their encapsulation of the first film layer 250.

[0265] Optionally, the spacer 288 is at least partially filled in the groove formed by the thinning portion 282-b.

[0266] Optionally, the top surface of the spacer 288 extends beyond the groove formed by the thinning portion 282-b and is clamped between the connecting electrodes of the two light-emitting elements.

[0267] In this embodiment, the first auxiliary layer 281 and the second auxiliary layer 282 can cooperate to prevent the spacer 288 from being too high and pushing up the light-emitting element.

[0268] Optionally, the first auxiliary layer 281 forms a spacer 288. The first auxiliary layer 281 is an organic film layer. The first auxiliary layer 281 and the spacer 288 formed by the organic film layer can satisfy some of the advantages mentioned in the above embodiments. Through this embodiment, the risk of the light-emitting element being lifted due to the fact that the thickness of the organic film layer itself is often larger than that of the inorganic layer can be avoided. Furthermore, the thinning portion 282-b can guide the organic material with fluidity during the manufacturing process to more easily reach the position where the spacer 288 needs to be formed.

[0269] Optionally, the formation of the thinned portion 282-b can refer to the description above, thereby making the height of the spacer portion 288 controllable without adding additional processes. This allows the first auxiliary layer 281 to be manufactured without excessive concern about limiting its height, thus enabling it to have a certain height to meet other design requirements.

[0270] like Figure 26 and Figure 27 As shown, Figure 26 This is a partial top view of the driving substrate provided in an embodiment of the present invention. Figure 27 This is a cross-sectional schematic diagram of the display panel of this application, wherein the cross-section is perpendicular to the plane on which the display panel is located.

[0271] The second auxiliary layer 282 has a thickened portion 282-c, which is located within the first opening OP1.

[0272] Optionally, the projection of the thickened portion 282-c onto the plane of the display panel, i.e., onto the third direction Z, is located within the first opening OP1.

[0273] Optionally, the protrusion formed by the thickened portion 282-c protrudes into the first opening OP1, forming an effect of being accommodated by the first opening OP1. Therefore, the first opening overlaps with the thickened portion 282-c in a direction parallel to the plane of the display panel.

[0274] Optionally, the driving substrate 200 includes a plurality of electrodes 240 exposed by the first opening OP1, at least a portion of the electrodes 240 being located on the thickened portion 282-c.

[0275] In this embodiment, the second auxiliary layer at the bottom of the light-emitting element is raised, and the electrode is simultaneously lifted after deposition on the second auxiliary layer. Because the electrode is raised, there is no need to worry that the organic first film layer or the first auxiliary layer is too high, causing the light-emitting element to fail to connect. There is also no need to limit the height of the first film layer (because the first film layer needs to meet certain thicknesses for other requirements, such as being set as a light-shielding film). Therefore, this embodiment is beneficial for improving the bonding yield of the light-emitting element.

[0276] Optionally, the second auxiliary layer 282 has a thickened portion 282-c, which corresponds one-to-one with at least a portion of the light-emitting element 300.

[0277] In other words, the electrode corresponding to a light-emitting element (optionally, it may include the electrode of a spare light-emitting element in a redundant setting area corresponding to the light-emitting element) is raised by a thickening portion 282-c.

[0278] like Figure 28 As shown, Figure 28 This is a partial top view of the driving substrate provided in an embodiment of the present invention.

[0279] Optionally, the second auxiliary layer 282 has a thickened portion 282-c, which is at least partially continuous with the thickened portions 282-c corresponding to different light-emitting elements 300. That is, one thickened portion 282-c simultaneously elevates the electrodes 240 of multiple light-emitting elements 300.

[0280] Optionally, one pixel SP corresponds to one thickened portion 282-c, that is, the electrode 240 of the light-emitting element 300 in the same pixel SP overlaps with the same thickened portion 282-c in the third direction Z, contacts the thickened portion 282-c and is raised by the thickened portion 282-c. For a description of the pixel SP, please refer to the following or other embodiments herein.

[0281] Optionally, in some alternative embodiments of this application, one can refer to the accompanying drawings provided in this application relating to the light-transmitting and non-light-transmitting areas of the display panel.

[0282] The display panel includes a light-transmitting area and a non-light-transmitting area, the non-light-transmitting area including a light-emitting element setting area; the first film layer also includes a second opening, the second opening defining the light-transmitting area of ​​the pixel.

[0283] Specifically, such as Figure 29 and Figure 30 As shown and Figure 31 As shown, Figure 28 and Figure 29 They are respectively Figure 1 Another enlarged schematic diagram of a portion of the display area; Figure 31 For along Figure 29 or Figure 30A cross-sectional schematic diagram of line DD' in the diagram. Figures 29-31 For parts that are the same as those in the aforementioned figures, please refer to the above content; they will not be repeated here.

[0284] The display panel includes a pixel light-transmitting area PTA and a non-light-transmitting area PNTA, with the non-light-transmitting area PNTA including the area for setting light-emitting elements.

[0285] The light-emitting element setting area is the area where the light-emitting element 300 is bonded, such as... Figure 29 As shown, the light-emitting element setting area includes regions for setting the blue light-emitting element PB, the green light-emitting element PG, and the red light-emitting element PR, respectively. For example... Figure 30 As shown, the light-emitting element setting area includes regions for setting blue light-emitting element PB, green light-emitting element PG, and red light-emitting element PR, respectively, and includes a redundant setting area Pre. When the bonded light-emitting element 300 fails, a normal light-emitting element 300 can be rebonded in the redundant setting area Pre for repair (the light-emitting element used for subsequent repair is temporarily referred to as a spare light-emitting element in other embodiments of this application). The two connecting portions 240 in the redundant setting area Pre can be respectively connected to the two connecting portions 240 in the adjacent light-emitting element setting area.

[0286] Blue light-emitting element PB, green light-emitting element PG, and red light-emitting element PR can be used to form pixel SP.

[0287] The first film layer 250 includes a light-absorbing material and transmits light through an opening. The first film layer 250 has a first opening OP1 and a second opening OP2. The first opening OP1 defines a light-emitting element setting area, and the second opening OP2 defines a pixel light-transmitting area PTA.

[0288] The planarization layer 230 (optionally, the second auxiliary layer 282) has a fourth opening, which overlaps with the pixel light-transmitting area PTA. The first film layer 250 covers the sidewall of the fourth opening of the planarization layer 230 to block light and reduce reflection.

[0289] The first auxiliary layer 281 covers the sidewalls of the first opening OP1 and the second opening OP2 of the first membrane layer 250.

[0290] The first auxiliary layer 281 has a fifth opening located in the pixel light-transmitting area PTA. The shape of the fifth opening is a rectangle with the four corners removed, such as a rounded rectangle. This solution can improve the situation where the first organic layer or the first auxiliary layer has holes due to the high step difference at the edge of the pixel light-transmitting area PTA, as well as the resulting problems such as peeling solution penetration and over-etching at the four corners.

[0291] Optionally, in some optional embodiments of this application, you can refer to the relevant drawings of the encapsulation layer 700 provided in this application. The driving substrate 200 includes a redundant electrode Pre. Since no eutectic process occurs, the redundant electrode Pre can be the second electrode portion 520. As an example, the redundant electrode Pre includes gold (Au).

[0292] Optionally, in some optional embodiments of this application, you can refer to the relevant drawings of the encapsulation layer 700 provided in this application. The display panel also includes an encapsulation layer 700, which may include encapsulating adhesive 710 and a cover plate 720. The encapsulating adhesive 710 covers the driving substrate 200 and is used to encapsulate the light-emitting element 300. The encapsulating adhesive 710 covers the side of the light-emitting element 300 and may also cover the upper surface of the light-emitting element 300 at the same time.

[0293] It should be noted that in other figures not shown, the encapsulation layer 700 may also be disposed above the driving substrate of the display panel. The specific structure of the encapsulation layer 700 can be referred to the relevant figures.

[0294] Optionally, in some alternative embodiments of this application, the relevant drawings concerning the encapsulation layer 700 provided in this application can be used as a reference. The display panel also includes a black matrix 800, which is located on the side of the encapsulating adhesive 710 away from the driving substrate 200. The black matrix 800 is provided with a first light-transmitting hole 810 and a second light-transmitting hole 820. The first light-transmitting hole 810 is located in the light-emitting element setting area, and the second light-transmitting hole 820 is located in the pixel light-transmitting area PTA. The black matrix 800 may be mesh-like, with the first light-transmitting hole 810 and the second light-transmitting hole 820 forming its grid. The black matrix 800 can reduce the reflectivity of the display panel and reduce crosstalk between the light-emitting elements 300.

[0295] In the second direction, the distance between the edge of the first light-transmitting hole 810 and the light-emitting element 300 is smaller than the distance between the edge of the first opening OP1 and the light-emitting element 300, wherein the second direction is parallel to the plane of the display panel. This arrangement further mitigates the problem of high reflectivity caused by the connection portion 240 located at the first opening OP1.

[0296] Optionally, in some optional embodiments of this application, you can refer to the relevant drawings of the encapsulation layer 700 provided in this application. The encapsulation layer 700 of the display panel also includes an adhesive layer 730, which is located between the encapsulation adhesive 710 and the cover plate 720.

[0297] Optionally, in some optional embodiments of this application, please refer to the relevant drawings provided in this application concerning the encapsulation layer 700. The display panel also includes a color resist 900, which covers the light-emitting element 300 to filter light and improve light purity.

[0298] Optionally, in some optional embodiments of this application, you can refer to the relevant drawings of the encapsulation layer 700 provided in this application. The driving substrate also includes a redundant electrode Pre. Since no eutectic process occurs, the redundant electrode Pre can be a second electrode portion 520. As an example, the redundant electrode Pre includes gold (Au). The color resist 900 covers the redundant electrode Pre to reduce the influence of the redundant electrode Pre on the reflectivity of the display panel.

[0299] Color resist 900 includes a blue color resist 910, a green color resist 920, and a red color resist 930. Light-emitting element 300 includes a blue light-emitting element PB, a green light-emitting element PG, and a red light-emitting element PR. The blue color resist 910 covers the blue light-emitting element PB, the green color resist 920 covers the green light-emitting element PG, and the red color resist 930 covers the red light-emitting element PR. In other embodiments, the red color resist may be omitted. On the one hand, the light emission efficiency of red light-emitting elements is low, and adding a red color resist further reduces the light emission efficiency. On the other hand, the wavelength of light reflected by the redundant electrode Pre or the connection portion 240 is mostly red-biased; even if a red color resist is used, its anti-reflection effect is very limited.

[0300] like Figures 32-38 As shown, Figures 32-38 These are partial top-down magnified schematic diagrams and related cross-sectional views of the display panel.

[0301] Optionally, the driving substrate includes a plurality of electrodes 240 exposed by the first opening OP1, the electrodes 240 having grooves 204. That is, the upper surface of the electrodes 240 forms a concave-convex structure.

[0302] In this embodiment, the eutectic layer flows under high temperature and external force during the bonding of the light-emitting element, thus patterning the electrode. Through the patterning of the electrode and the uneven structure on the side of the electrode, the adhesion between the eutectic layer and the electrode can be increased.

[0303] Optionally, the opening of the groove 204 faces the light-emitting element 300.

[0304] It should be noted that the dashed box in the figure represents the area where the light-emitting element or the backup light-emitting element is set; the two electrodes 240 correspond to the same light-emitting element 300, and the specific description can be found above.

[0305] in, Figures 35-38 The diagram illustrates the cross-sectional views of section lines at positions ① and ② in the top view, along with different groove types: open grooves and non-open grooves. The cross-sectional direction is perpendicular to the plane of the display panel.

[0306] Optionally, the groove 204 may be a groove 204 that penetrates the electrode 240 or a non-penetrating groove 204. The penetration direction is perpendicular to the plane of the display panel.

[0307] like Figure 36 As shown, groove 204 is a non-through groove 204.

[0308] Optional, such as Figure 33 , Figures 35-38 As shown, at least a portion of the groove 204 is connected to the edge of the electrode 240. That is, the pattern of the groove's orthographic projection onto the substrate exists in the opening connecting to the outside of the electrode; in other words, a notch is present on the outer contour of the electrode. Through this embodiment, designing an opening on the outside of the electrode pad allows the eutectic layer to flow towards the outside of the light-emitting element, discharging the overflowing eutectic layer and preventing short circuits between the anode and cathode of the light-emitting element.

[0309] Optionally, in the electrode 240 corresponding to the same light-emitting element 300, the electrode 240 includes a first edge A facing away from the other electrode 240, and the groove 204 communicates with the first edge A. The inventors have discovered that if the light-emitting element undergoes a high-temperature process after bonding, the eutectic layer is prone to reflow, leading to an increase in dark spots. In this embodiment, no drainage port is designed between the LED anode and cathode; drainage ports are only designed around the LED periphery. This controls the outflow of the eutectic layer, guiding the outflow of the eutectic layer from different electrodes away from the other electrode, further optimizing the effect of preventing short circuits.

[0310] Optional, such as Figure 34 As shown, the groove 204 and the light-emitting element 300 do not overlap at the connection point.

[0311] Optionally, at least part of the recess 204 is located between the redundant setting area Pre and the light-emitting element 300. This prevents the fabrication of the spare light-emitting element, which would affect subsequent fabrication of the redundant setting area, from being affected by the eutectic layer of the previously fabricated light-emitting element.

[0312] The present invention also provides a display device, including the display panel provided by the present invention. For example... Figure 39 As shown, Figure 39 This is a schematic diagram of a display device provided in an embodiment of the present invention. The display device 1000 includes the display panel 100 provided in any of the above embodiments of the present invention. Figure 39This embodiment uses a mobile phone as an example to illustrate the display device 1000. It is understood that the display device provided in this embodiment can be any other display device with display function, such as a computer, television, or vehicle-mounted display device; this invention does not impose specific limitations on this. The display device provided in this embodiment has the beneficial effects of the display panel provided in this embodiment. For details, please refer to the specific descriptions of the display panel in the above embodiments; these will not be repeated here.

[0313] The above description, in conjunction with specific preferred embodiments, provides a further detailed explanation of the present invention. It should not be construed that the specific implementation of the present invention is limited to these descriptions. For those skilled in the art, various simple deductions or substitutions can be made without departing from the concept of the present invention, and all such modifications and substitutions should be considered within the scope of protection of the present invention.

Claims

1. A display panel, characterized in that, include: Substrate; A driving substrate located on a substrate, the driving substrate including a first film layer and a connecting portion, the connecting portion being located on the side of the first film layer facing the substrate, the first film layer including a first opening; A light-emitting element is located on the driving substrate, the light-emitting element is disposed corresponding to the first opening, the first opening exposes at least a portion of the connecting portion, and the light-emitting element is connected to the connecting portion through the first opening; The driving substrate further includes an auxiliary film layer, which includes a thickened portion, a thinned portion, or a hollowed-out portion that overlaps with the first opening.

2. The display panel as described in claim 1, characterized in that, The first membrane layer comprises organic materials.

3. The display panel according to claim 1, characterized in that, The first film layer includes negative photoresist.

4. The display panel according to claim 1, characterized in that, The first film layer includes a light-absorbing material.

5. The display panel according to claim 1, characterized in that, The auxiliary membrane layer is adjacent to the first membrane layer.

6. The display panel according to claim 1, characterized in that, The auxiliary film layer includes a first auxiliary layer located on the side of the first film layer facing away from the substrate; and / or, The auxiliary film layer includes a second auxiliary layer located on the side of the first film layer facing the substrate.

7. The display panel as described in claim 6, characterized in that, The first auxiliary layer is an organic material.

8. The display panel as described in claim 6, characterized in that, The first auxiliary layer has a higher density than the first film layer.

9. The display panel as described in claim 6, characterized in that, The first auxiliary layer overlaps at least partially with the sidewall of the first opening.

10. The display panel as claimed in claim 6, characterized in that, The first auxiliary layer includes the cutout portion, which is located within the coverage area of ​​the first opening.

11. The display panel as claimed in claim 6, characterized in that, The driving substrate includes a plurality of electrodes exposed by the first opening, and the plurality of electrodes correspond to different cutout portions.

12. The display panel as claimed in claim 6, characterized in that, The driving substrate includes a plurality of electrodes exposed by the first opening, and the first auxiliary layer includes a spacer between the electrodes.

13. The display panel as claimed in claim 12, characterized in that, The distance from the top surface of the spacer to the electrode is L, where L≤4um.

14. The display panel as claimed in claim 12, characterized in that, The thickness h of the spacer is greater than the thickness d1 of the first auxiliary layer located in the upper region of the first film layer.

15. The display panel as claimed in claim 12, characterized in that, The sum of the thicknesses of the first film layer and the first auxiliary layer is H, and the thickness of the spacer portion is h, wherein... .

16. The display panel as described in claim 6 or 12, characterized in that, The sum of the thicknesses of the first film layer and the first auxiliary layer is H, where H ≤ 4 μm.

17. The display panel as claimed in claim 12, characterized in that, The width of the spacer is D, where D≤5um, and the direction of the width is the direction from the electrode adjacent to one side of the spacer to the electrode adjacent to the other side.

18. The display panel as claimed in claim 12, characterized in that, The second auxiliary layer has the thinned portion, and the spacer portion overlaps with the thinned portion.

19. The display panel as claimed in claim 6, characterized in that, The second auxiliary layer has the thickened portion, which is located within the first opening.

20. The display panel as claimed in claim 6, characterized in that, The driving substrate includes a plurality of electrodes exposed by the first opening, at least a portion of which are located on the thickened portion.

21. The display panel as claimed in claim 6, characterized in that, The second auxiliary layer has the thickened portion, which corresponds one-to-one with at least a portion of the light-emitting elements.

22. The display panel as claimed in claim 6, characterized in that, The second auxiliary layer has the thickened portion, which is at least partially continuous with the thickened portion corresponding to different light-emitting elements.

23. The display panel as claimed in claim 1, characterized in that, The driving substrate includes a plurality of electrodes exposed by the first opening, the electrodes having grooves.

24. The display panel as claimed in claim 23, characterized in that, The groove is either a through groove or a non-through groove.

25. The display panel as claimed in claim 23, characterized in that, At least a portion of the groove is connected to the edge of the electrode.

26. The display panel as claimed in claim 25, characterized in that, In the electrodes corresponding to the same light-emitting element, the electrode includes a first edge facing away from the other electrode, and the groove is connected to the first edge.

27. The display panel as claimed in claim 23, characterized in that, The groove does not overlap with the connection point of the light-emitting element.

28. The display panel as described in claim 1 or 5, characterized in that, The display panel includes a light-transmitting area and a non-light-transmitting area, and the non-light-transmitting area includes a light-emitting element setting area; The first film layer further includes a second opening that defines the light-transmitting area.

29. A display device, characterized in that, Includes the display panel as described in any one of claims 1-28.

30. A method for manufacturing a display panel, characterized in that, A first film layer is formed on the driving substrate, the first film layer including a first opening; An auxiliary film layer is formed, which covers the first film layer, and the auxiliary film layer includes a hollow portion that overlaps with the first opening; A photoresist pattern is formed, wherein the photoresist pattern is located on the side of the auxiliary film layer away from the first film layer; The photoresist pattern has through holes that overlap with the first opening; An electrode layer is formed, the electrode layer including a first electrode portion and a second electrode portion, the first electrode portion covering the photoresist pattern, and the second electrode portion including a portion located within the first opening; Remove the photoresist pattern and the first electrode portion; A light-emitting element is provided, and the light-emitting element is transferred to a position above the driving substrate, wherein the light-emitting element includes a main body and a bonding electrode; The light-emitting element is bonded to the second electrode portion, such that the bonding electrode and the second electrode portion form the electrode of the light-emitting element.

31. The manufacturing method according to claim 30, characterized in that, The auxiliary membrane layer is an organic membrane layer.

32. The manufacturing method according to claim 31, characterized in that, The auxiliary film layer and the photoresist pattern are formed using the same photomask.

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