A high-safety current integrated semiconductor bridge chip based on through-silicon via technology

Abstract

The present invention provides a high-safety current integrated semiconductor bridge chip based on through-silicon via technology, comprising: a pad layer, a semiconductor bridge layer, an isolation layer, a silicon substrate, a shunt layer, a heat sink, and a through-silicon via. The pad layer is located at the top layer of the chip, parallel to the semiconductor bridge layer and the shunt layer; the next layer is the semiconductor bridge layer; there are two isolation layers; the shunt layer is connected to the semiconductor bridge layer in parallel through the through-silicon via; and the heat sink allows the heat generated by the shunt layer to be introduced into the external connection device as quickly as possible. The present invention provides a high-safety integrated semiconductor bridge chip based on through-silicon via technology. The rated power of the shunt layer is used to screen the current. Current below the rated power will be consumed. When a certain value is reached, the shunt layer is disconnected, and the proportion of the semiconductor bridge shunt can be adjusted by the resistance ratio of the semiconductor bridge and the shunt layer, so that the shunt layer heats up first and the semiconductor bridge layer heats up later, making the pyrotechnics safer, and the device is more integrated, smaller in size, and easier to assemble.

Description

Technical Field

[0001] The present invention relates to the field of explosive devices, and in particular to a high-safety current integrated semiconductor bridge chip based on through silicon via technology. Background Art

[0002] Pyrotechnics technology is widely used and is closely linked to the development of high-tech defense technologies such as aerospace, automotive electronics, and weapons technology. Semiconductor bridge pyrotechnics, thanks to their high safety and reliability, low ignition energy, and nonlinear energy conversion, have been widely adopted in pyrotechnic systems. However, as battlefield electromagnetic environments become increasingly harsh, pyrotechnic systems place increasing demands on the safety of semiconductor bridges. The safe current of traditional semiconductor bridge igniters is generally 1A / 1W for 5 minutes. This has been increased to 1.5A / 2.25W or even 2A / 4W in some applications. This prolonged high-power load often causes semiconductor bridge ignition, discoloration of the ignition agent, and failure. Currently, a more effective solution is to connect an NTC resistor in parallel. By reducing the NTC's heated resistance and increasing the current diversion, this protection method is effective. However, this method requires the semiconductor bridge to reach a certain temperature before the NTC can function. This also causes the ignition agent at the semiconductor bridge interface to reach a certain temperature, at which point the ignition agent may decompose and denature. In addition, the NTC resistor needs to be connected in parallel to the semiconductor bridge ignition device, and the B coefficient of the device and the welding quality will affect the final result. Summary of the Invention

[0003] To address these existing issues and needs, the present invention proposes a high-safety current integrated semiconductor bridge chip based on through-silicon via (TSV) technology. Unlike traditional methods for increasing the safety current of pyrotechnic devices, this semiconductor bridge chip's hot zone occurs within the shunt layer. This ensures that heat accumulation occurs beneath the chip before the shunt layer trips, preventing the accelerated decomposition of the caustic in the bridge region. This fundamentally ensures the stability of the pyrotechnic device. Furthermore, it addresses the issues of poor assembly processability, large size, and long operating time associated with NTC devices. Thanks to its integrated design, the semiconductor bridge chip is smaller and lighter.

[0004] The technical solution adopted by the present invention to solve its technical problem is: providing a high-safety current integrated semiconductor bridge chip based on silicon via technology, including: a pad layer, a semiconductor bridge layer, an isolation layer, a silicon substrate, a shunt layer, a heat sink and silicon vias. The pad layer is located at the top layer of the chip, connecting the semiconductor bridge layer and the shunt layer in parallel; it acts as an electrical connection; the next layer is the semiconductor bridge layer, which functions as energy conversion; there are two isolation layers, the upper isolation layer is mainly used to ensure the doping concentration and injection junction depth, and secondly, it can play a role in heat insulation, so that the heat generated by the semiconductor bridge is preferentially introduced into the upper agent, and the lower isolation layer mainly functions as heat insulation, so that the heat generated by the shunt layer is preferentially introduced into the external connection through the heat sink; the shunt layer is connected to the semiconductor bridge layer in parallel through silicon vias, and through a certain proportion of resistance design, so that the current lower than the rated power of the shunt layer is diverted through the shunt layer. When the current higher than the rated power passes through, the shunt layer quickly changes from conduction to disconnection within a certain period of time, so that the current returns from the shunt layer to the semiconductor bridge layer, thereby causing the semiconductor bridge layer to undergo electrothermal conversion; the heat sink is to increase the rated power of the shunt layer so that the heat generated by the shunt layer can be introduced into the external connection device as soon as possible; the silicon substrate is the support carrier for the device patterning.

[0005] The isolation layer material is silicon nitride or silicon dioxide, with a thickness of 1~2μm. The overall thickness of the silicon substrate is 50~100μm. The pad layer material is aluminum or gold. The material of the shunt layer is gold, platinum, zinc, tin or ruthenium. The line width of the shunt layer is less than 40μm, the layer thickness is less than 3μm, and the line width of the weak link is less than 20μm. The material of the heat sink layer is tungsten copper. The diameter of the through silicon via is 10~20um, and the through silicon via filling material is copper or low-resistance silicon. The resistance of the shunt layer is 1 / 9~1 / 4 of the resistance of the semiconductor bridge layer. The overall characteristic size of the device is less than 2mm, and the overall weight does not exceed 200mg.

[0006] The beneficial effect of the present invention is that the chip hot zone occurs in the shunt layer, which can ensure that heat accumulation occurs under the chip before the shunt layer is broken, and will not affect the accelerated decomposition of the agent in the bridge area, thereby fundamentally ensuring the stability of the pyrotechnic device. In addition, it solves the problems of poor assembly processability, large size and long action time of NTC devices. Under the integrated design, the semiconductor bridge chip is smaller in size and lighter in weight. BRIEF DESCRIPTION OF THE DRAWINGS

[0007] The present invention will be further described below with reference to the accompanying drawings and examples.

[0008] Figure 1 It is a structural schematic diagram of the present invention;

[0009] Figure 2 Schematic diagram of the diversion layer structure of the present invention;

[0010] Figure 3This is a safety current working flow diagram of the present invention;

[0011] Figure 4 It is the ignition current working flow chart of the present invention;

[0012] Figure 5 Schematic diagram of the workflow for increasing semiconductor bridge safety current for NTC.

[0013] In the figure, 1. semiconductor bridge layer, 2. solder pad, 3. isolation layer, 4. silicon substrate, 5. shunt layer, 6. heat sink, 7. through silicon via, 5-1 shunt layer weak link, 5-2 shunt layer conductive area. DETAILED DESCRIPTION

[0014] The present invention provides a high-safety current integrated semiconductor bridge chip structure based on through silicon via technology. Figure 1 and 2 As shown, it includes: a semiconductor bridge layer (1), a pad (2) located on an isolation layer (3), a silicon substrate (4) in the middle of the isolation layer (3), the semiconductor bridge layer (1) is connected in parallel to the shunt layer (5) through silicon vias (7), the isolation layer (3) is located above the shunt layer (5), and a heat sink (6) is located below.

[0015] In this embodiment, when current passes through the pad (2), based on Kirchhoff's law, the current preferentially passes through the shunt layer (5). Under the current load, the shunt layer (5) undergoes electrothermal conversion according to Joule's law. The energy generated by the electrothermal conversion will be blocked by the isolation layer (3) and guided by the heat sink (6), so that the heat is preferentially introduced into the external connection device. When the loaded current is greater than the rated power of the shunt layer (5), the shunt layer (5) will undergo a rapid electrothermal phase change in the shunt layer weak area (5-1), and then deform under the larger thermal expansion coefficient of the material, thereby causing the shunt layer weak area (5-1) to be disconnected. When the shunt layer (5) is disconnected, the current load will pass through the semiconductor bridge layer (1), and then the semiconductor bridge layer (1) will undergo electrothermal conversion, igniting the ignition agent. According to the selection of the shunt layer (5) material and the design of the shunt layer weak area (5-1) structure, the rated power can be controlled, thereby designing the size of the safe current.

[0016] The integrated semiconductor bridge chip is tiny in size, taking up almost no volume space for actual applications, and has an extremely low weight, with an overall weight of hundreds of milligrams.

Claims

1. A high-safety current integrated semiconductor bridge chip based on through-silicon via technology, characterized in that: include: Pad layer, semiconductor bridge layer, isolation layer, silicon substrate, shunt layer, heat sink and through silicon via; The pad layer is located at the top layer of the chip and is connected in parallel to the semiconductor bridge layer and the shunt layer; the next layer is the semiconductor bridge layer; the isolation layer includes an upper isolation layer and a lower isolation layer; the shunt layer is connected in parallel to the semiconductor bridge layer through the silicon via, so that the current below the rated power of the shunt layer is diverted through the shunt layer. When the current above the rated power passes through, the shunt layer quickly changes from conduction to disconnection, so that the current returns from the shunt layer to the semiconductor bridge layer, thereby causing the semiconductor bridge layer to undergo electrothermal conversion; the heat sink increases the rated power of the shunt layer, so that the heat generated by the shunt layer is introduced into the external connection device as soon as possible; the silicon substrate is a support carrier for the device patterning.

2. The high-safety current integrated semiconductor bridge chip based on through silicon via technology according to claim 1, characterized in that: The upper isolation layer allows the heat generated by the semiconductor bridge to be preferentially introduced into the upper medicine layer; the lower isolation layer allows the heat generated by the shunt layer to be preferentially introduced into the external connection component through the heat sink.

3. The high-safety current integrated semiconductor bridge chip based on through silicon via technology according to claim 1, characterized in that: The material of the isolation layer is silicon nitride or silicon dioxide, and the thickness is 1 to 2 μm; the overall thickness of the silicon substrate is 50 to 100 μm.

4. The high-safety current integrated semiconductor bridge chip based on through silicon via technology according to claim 1, characterized in that: The pad layer material is aluminum or gold.

5. The high-safety current integrated semiconductor bridge chip based on through silicon via technology according to claim 1, characterized in that: The material of the shunt layer is gold, platinum, zinc, tin or ruthenium.

6. The high-safety current integrated semiconductor bridge chip based on through silicon via technology according to claim 1, characterized in that: The line width of the diversion layer is less than 40μm, the layer thickness is less than 3μm, and the line width of the weak link is less than 20μm.

7. The high-safety current integrated semiconductor bridge chip based on through silicon via technology according to claim 1, characterized in that: The material of the heat sink layer is tungsten or copper.

8. The high-safety current integrated semiconductor bridge chip based on through silicon via technology according to claim 1, characterized in that: The diameter of the through silicon via is 10 to 20 μm, and the through silicon via filling material is copper or low-resistance silicon.

9. The high-safety current integrated semiconductor bridge chip based on through silicon via technology according to claim 1, characterized in that: The resistance of the shunt layer is 1 / 9 to 1 / 4 of the resistance of the semiconductor bridge layer.

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