Wafer doping concentration adjustment method and device

Abstract

The application relates to a wafer doping concentration adjusting method and device, which comprises the following steps: obtaining an initial doped wafer prepared under an initial doping concentration; taking the initial doped wafer as a current to-be-tested wafer; measuring the absorption spectrum of a functional area on the current to-be-tested wafer by applying light signals with different wavelengths to the current to-be-tested wafer; the absorption spectrum comprises the corresponding relationship between the wavelength of the light signal and the photocurrent intensity; analyzing and processing the absorption spectrum to obtain a current working wavelength of the current to-be-tested wafer; adjusting the initial doping concentration based on a target working wavelength and the current working wavelength to obtain a target doping concentration; and the target doping concentration is used for preparing a target doped wafer, and the working wavelength of the target doped wafer is the target working wavelength. In this way, the wafer that does not meet the requirements of doping can be found in time in the early stage of chip manufacturing, the improvement direction of the wafer doping process can be provided, and the progress of chip development can be accelerated.

Description

Technical Field

[0001] This application relates to the field of silicon photonics chip technology, and in particular to a method and apparatus for adjusting wafer doping concentration. Background Technology

[0002] In an era of rapid development in high-speed silicon photonics technology, doping processes are increasingly being used in high-speed silicon photonic chips. Achieving accurate measurement of doping properties in the early stages of the doping process plays a crucial role in the entire chip manufacturing process.

[0003] Currently, the doping process can only be understood after the entire chip manufacturing process is completed, by measuring the overall device's optoelectronic performance. However, silicon photonics chip fabrication is extremely complex and time-consuming. If the status of each key process node cannot be monitored in a timely manner, it is difficult to detect and adjust the process early in the doping phase to achieve the required doping effect, which will significantly impact the improvement and progress of technology development. Summary of the Invention

[0004] This application provides a method and apparatus for adjusting wafer doping concentration. By measuring the absorption spectrum of functional regions on the wafer, the performance of the wafer can be evaluated in the early stages of chip fabrication, thereby providing quantitative directions for process improvement, accelerating the progress of process development, improving and monitoring process quality, and reducing development costs.

[0005] On one hand, embodiments of this application provide a method for adjusting wafer doping concentration, applied to wafer doping processes, the method comprising:

[0006] Obtain the initial doped wafer prepared at the initial doping concentration;

[0007] Use the initially doped wafer as the current test wafer;

[0008] By applying optical signals of different wavelengths to the wafer under test, the absorption spectrum of the functional area on the wafer under test is measured; the absorption spectrum includes the correspondence between the wavelength of the optical signal and the intensity of the photocurrent.

[0009] The absorption spectrum is analyzed and processed to obtain the current operating wavelength of the wafer under test;

[0010] Based on the target operating wavelength and the current operating wavelength, the initial doping concentration is adjusted to obtain the target doping concentration; the target doping concentration is used to prepare the target doped wafer, and the operating wavelength of the target doped wafer is the target operating wavelength.

[0011] In some possible embodiments, the initial doping concentration is adjusted based on the target operating wavelength and the current operating wavelength to obtain the target doping concentration, including:

[0012] Based on the target operating wavelength and the current operating wavelength, the initial doping concentration is adjusted to obtain the intermediate doping concentration;

[0013] Prepare intermediate doped wafers corresponding to intermediate doping concentrations, and use the intermediate doped wafers as the current test wafers. Repeat the following steps: apply light signals of different wavelengths to the current test wafers and measure the absorption spectra of the functional regions on the current test wafers; analyze and process the absorption spectra to obtain the current operating wavelength of the current test wafers.

[0014] The intermediate doping concentration is taken as the target doping concentration until the current working wavelength meets the preset working wavelength range; the preset working wavelength range is determined according to the target working wavelength.

[0015] On the other hand, embodiments of this application provide a wafer doping concentration adjustment device, applied to a wafer doping process, the device comprising:

[0016] The wafer acquisition module is used to acquire the initially doped wafer prepared at the initial doping concentration; and to use the initially doped wafer as the current wafer to be tested.

[0017] The absorption spectroscopy analysis module is used to measure the absorption spectrum of the functional areas on the wafer under test by applying light signals of different wavelengths. The absorption spectrum includes the correspondence between the wavelength of the light signal and the intensity of the photocurrent. The absorption spectrum is analyzed and processed to obtain the current operating wavelength of the wafer under test.

[0018] The doping concentration adjustment module is used to adjust the initial doping concentration based on the target operating wavelength and the current operating wavelength to obtain the target doping concentration; the target doping concentration is used to prepare the target doped wafer, and the operating wavelength of the target doped wafer is the target operating wavelength.

[0019] In some possible embodiments, the absorption spectroscopy analysis module includes:

[0020] The light source submodule is located on one side of the wafer under test and is used to provide light signals of different wavelengths.

[0021] The light source import submodule is used to adjust the transmission direction of the light signal and align the light signal with the functional area on the wafer under test so that the functional area absorbs the light signal.

[0022] The photocurrent detection submodule is located on the other side of the wafer under test. The photocurrent detection submodule is used to detect the photocurrent signal generated when the optical signal passes through the functional area.

[0023] The absorption spectroscopy measurement submodule is used to obtain the absorption spectrum of the functional area on the current wafer under test based on the photocurrent signal corresponding to different optical signal wavelengths.

[0024] The analysis submodule is used to analyze and process the absorption spectrum to obtain the current operating wavelength of the wafer under test.

[0025] In some possible embodiments, the light source submodule includes a tunable laser; the tunable wavelength range of the tunable laser is 1200 nm to 2500 nm.

[0026] In some possible embodiments, the light source introduction submodule includes a single-mode fiber or a fiber collimator; the fiber collimator can form a beam with a diameter ranging from 0.1 mm to 2 mm.

[0027] In some possible embodiments, the device also includes a cargo platform;

[0028] The platform is used to fix the wafer to be tested; the platform can move in both the horizontal and vertical directions.

[0029] In some possible embodiments, the device also includes a triaxial guide rail;

[0030] The three-axis guide rail is used to fix and adjust the position of single-mode optical fibers or optical fiber collimators.

[0031] In some possible embodiments, the photocurrent detection submodule includes a photodetector and a photocurrent measuring instrument;

[0032] The output terminal of the photodetector is connected to the input terminal of the photocurrent measuring instrument;

[0033] The photocurrent measurement range of the photocurrent measuring instrument is 1pA to 10mA.

[0034] In some possible embodiments, the device further includes a detector base for fixing the photodetector;

[0035] The detector base is also used to adjust the height of the photodetector.

[0036] The wafer doping concentration adjustment method and apparatus provided in this application have the following beneficial effects:

[0037] This application provides a wafer doping concentration adjustment method and apparatus applied to wafer doping processes. It tests the doped wafer, measures the absorption spectrum of functional regions on the wafer, and adjusts the doping concentration based on the analysis results of the absorption spectrum. This allows for the timely detection of wafers with unacceptable doping in the early stages of chip fabrication, preventing further development based on such wafers and reducing development costs. Simultaneously, the analysis results of the wafer absorption spectrum can provide directions for improving the doping process, thereby accelerating chip development. Attached Figure Description

[0038] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0039] Figure 1 A schematic flowchart illustrating a wafer doping concentration adjustment method provided in an embodiment of this application;

[0040] Figure 2 A schematic diagram of a process for determining a target doping concentration provided in an embodiment of this application;

[0041] Figure 3 A schematic diagram illustrating another process for determining the target doping concentration provided in an embodiment of this application;

[0042] Figure 4 This is a structural block diagram of a wafer doping concentration adjustment device provided in an embodiment of this application;

[0043] Figure 5 This is a schematic diagram of the structure of an absorption spectroscopy analysis module provided in an embodiment of this application;

[0044] Figure 6 This is a schematic diagram of the structure of a light source import submodule provided in an embodiment of this application;

[0045] Figure 7 This is a schematic diagram of another light source import submodule provided in an embodiment of this application;

[0046] Figure 8 A schematic diagram of the absorption spectrum of a silicon-germanium wafer provided in an embodiment of this application;

[0047] Figure 9 This is a schematic diagram of a processed absorption spectrum provided in an embodiment of this application. Detailed Implementation

[0048] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of protection of this application.

[0049] It should be noted that the terms "first," "second," etc., in the specification, claims, and accompanying drawings of this application are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that such data can be interchanged where appropriate so that the embodiments of this application described herein can be implemented in orders other than those illustrated or described herein. Furthermore, the terms "comprising" and "having," and any variations thereof, are intended to cover non-exclusive inclusion; for example, a process, method, system, product, or server that comprises a series of steps or units is not necessarily limited to those steps or units explicitly listed, but may include other steps or units not explicitly listed or inherent to such processes, methods, products, or devices.

[0050] Currently, in related technologies, the doping status of the wafer doping process can only be understood by measuring the overall photoelectric performance of the chip after the entire fabrication process of the silicon photonics high-speed chip is completed. If the photoelectric performance is not good, the silicon photonics high-speed chip needs to be fabricated again, that is, the doping concentration needs to be re-determined and the wafer needs to be re-doped, which greatly reduces the chip development progress.

[0051] Based on this, the present application provides a wafer doping concentration adjustment method, which is applied to the wafer doping process. The doped wafer is tested, and the absorption spectrum of the functional area on the wafer is measured. Based on the analysis results of the absorption spectrum, the doping concentration is adjusted. In this way, wafers that do not meet the doping requirements can be identified in the early stage of chip manufacturing, avoiding further development based on the wafers that do not meet the doping requirements, thus reducing development costs. At the same time, the analysis results of the wafer absorption spectrum can provide directions for improvement of the doping process, thereby accelerating the progress of chip development.

[0052] The following describes an embodiment of a wafer doping concentration adjustment method provided in this application. Please refer to... Figure 1 , Figure 1 This is a schematic flowchart of a wafer doping concentration adjustment method provided in an embodiment of this application, as shown below. Figure 1 As shown, the method includes:

[0053] S101: Obtain the initial doped wafer prepared at the initial doping concentration;

[0054] S103: Use the initial doped wafer as the current wafer to be tested;

[0055] S105: By applying optical signals of different wavelengths to the wafer under test, the absorption spectrum of the functional area on the wafer under test is measured; the absorption spectrum includes the correspondence between the wavelength of the optical signal and the intensity of the photocurrent;

[0056] S107: Analyze and process the absorption spectrum to obtain the current operating wavelength of the wafer under test;

[0057] S109: Based on the target operating wavelength and the current operating wavelength, the initial doping concentration is adjusted to obtain the target doping concentration; the target doping concentration is used to prepare the target doped wafer, and the operating wavelength of the target doped wafer is the target operating wavelength.

[0058] In this embodiment of the application, to avoid the situation where the performance of the initially doped wafer prepared at the initial doping concentration may not meet the actual application requirements of the subsequently prepared silicon photonics chip, the following steps S101 to S109 are performed: the initially doped wafer is used as the current test wafer, and its absorption spectrum is measured. The current operating wavelength is determined by analyzing the absorption spectrum. The current operating wavelength is compared with the target operating wavelength required for the actual application of the silicon photonics chip. If the requirements are not met, the initial doping concentration is adjusted until the target doping concentration that meets the requirements is obtained. In this way, it can be ensured that the target doped wafer prepared based on the target doping concentration can ultimately produce a silicon photonics chip that meets the actual application requirements after subsequent fabrication processes.

[0059] In some possible embodiments, the above-described adjustment of the initial doping concentration based on the target operating wavelength and the current operating wavelength to obtain the target doping concentration may specifically include, for example: Figure 2 The following steps are shown:

[0060] S201: Based on the target operating wavelength and the current operating wavelength, the initial doping concentration is adjusted to obtain the intermediate doping concentration;

[0061] S203: Prepare an intermediate doped wafer with an intermediate doping concentration. Use the intermediate doped wafer as the current test wafer and repeat the following steps: apply light signals of different wavelengths to the current test wafer and measure the absorption spectrum of the functional region on the current test wafer; analyze and process the absorption spectrum to obtain the current working wavelength of the current test wafer.

[0062] S205: Until the current working wavelength meets the preset working wavelength range, the intermediate doping concentration is taken as the target doping concentration; the preset working wavelength range is determined according to the target working wavelength.

[0063] The preset operating wavelength range can be determined based on the target operating wavelength and the allowable error.

[0064] In actual production processes, the initial doping concentration can be one or multiple. When the initial doping concentration includes only one initial doping concentration, the initial doping concentration is continuously adjusted through the above steps S201 to S205 to determine the intermediate doping concentration. Based on the intermediate doping concentration, an intermediate doped wafer is prepared, and then the absorption spectrum of the intermediate doped wafer is measured and analyzed. This process is repeated multiple times until the target doping concentration that meets the requirements is obtained.

[0065] In some other possible embodiments, since the target doping concentration that ultimately meets the actual requirements is not known in advance, the initial doping concentration may include multiple initial doping concentrations in order to speed up the chip fabrication process; correspondingly, the current wafer under test also includes multiple current wafers under test corresponding to the number of multiple initial doping concentrations, and similarly, the current operating wavelength also includes the current operating wavelength of each of the multiple current wafers under test.

[0066] At this point, the aforementioned adjustment of the initial doping concentration based on the target operating wavelength and the current operating wavelength to obtain the target doping concentration may include, for example: Figure 3 The following steps are shown:

[0067] S301: Establish the correspondence between doping concentration and operating wavelength based on multiple current operating wavelengths and the initial doping concentration corresponding to each operating wavelength.

[0068] Specifically, in practical applications, multiple wafers to be tested can be obtained corresponding to multiple initial doping concentrations. For example, multiple initial doping concentrations can include 10%, 20%, and 30%. Then, there are three wafers to be tested, each with a current operating wavelength of 1500nm, 2000nm, and 2500nm, respectively. Thus, it can be determined that the correspondence between doping concentration and operating wavelength is a linear relationship.

[0069] S303: Determine the target doping concentration corresponding to the target operating wavelength from the correspondence between doping concentration and operating wavelength.

[0070] Specifically, after determining that there is a linear relationship between doping concentration and operating wavelength, the target doping concentration corresponding to the target operating wavelength is calculated based on the target operating wavelength required for the actual chip application, using this linear relationship.

[0071] It should be noted that the data in the above embodiments are merely examples and have no limiting effect; in practical applications, the relationship between doping concentration and operating wavelength can be linear or non-linear.

[0072] Please see Figure 4 , Figure 4This is a structural block diagram of a wafer doping concentration adjustment device provided in an embodiment of this application. The wafer doping concentration adjustment device is applied to the wafer doping process. The wafer doping concentration adjustment device includes a wafer acquisition module 1, an absorption spectroscopy analysis module 2, and a doping concentration adjustment module 3.

[0073] Wafer acquisition module 1 is used to acquire the initially doped wafer prepared at the initial doping concentration; and to use the initially doped wafer as the current wafer to be tested;

[0074] Absorption spectroscopy analysis module 2 is used to measure the absorption spectrum of the functional areas on the wafer under test by applying light signals of different wavelengths to the wafer under test; the absorption spectrum includes the correspondence between the wavelength of the light signal and the intensity of the photocurrent; the absorption spectrum is analyzed and processed to obtain the current operating wavelength of the wafer under test;

[0075] The doping concentration adjustment module 3 is used to adjust the initial doping concentration based on the target operating wavelength and the current operating wavelength to obtain the target doping concentration; the target doping concentration is used to prepare the target doped wafer, and the operating wavelength of the target doped wafer is the target operating wavelength.

[0076] In some possible embodiments, such as Figure 5 As shown, the absorption spectroscopy analysis module 2 includes a light source submodule 21, a light source import submodule 22, a photocurrent detection submodule 23, an absorption spectroscopy measurement submodule 24, and an analysis submodule 25;

[0077] The light source submodule 21 is located on one side of the wafer under test. The light source submodule is used to provide light signals of different wavelengths.

[0078] The light source import submodule 22 is used to adjust the transmission direction of the light signal and align the light signal with the functional area on the wafer under test so that the functional area absorbs the light signal.

[0079] The photocurrent detection submodule 23 is located on the other side of the wafer under test. The photocurrent detection submodule is used to detect the photocurrent signal generated when the optical signal passes through the functional area.

[0080] The absorption spectroscopy measurement submodule 24 is used to obtain the absorption spectrum of the functional area on the current wafer under test based on the photocurrent signal corresponding to different optical signal wavelengths.

[0081] Analysis submodule 25 is used to analyze and process the absorption spectrum to obtain the current operating wavelength of the wafer under test.

[0082] In this embodiment, light signals are irradiated onto the surface of the functional area on the wafer under test through the light source submodule 21 and the light source introduction submodule 22. On the other side of the wafer under test, the photocurrent detection submodule 23 receives the photocurrent signal generated by the light passing through the functional area. By detecting the photocurrent signals corresponding to light signals of different wavelengths, the absorption spectrum corresponding to the functional area is obtained. By analyzing and processing the absorption spectrum, the current operating wavelength of the wafer under test is obtained.

[0083] In some possible embodiments, the light source submodule 21 includes a tunable laser; the tunable wavelength range of the tunable laser is 1200nm to 2500nm.

[0084] In some possible embodiments, if the wafer under test has a multilayer structure, an anti-reflective coating can be applied to the surface of the wafer before measurement. This can reduce the reflection effect of the multilayer film and reduce the noise brought to the measurement process by the reflected light signal.

[0085] In some possible embodiments, the light source introduction submodule 22 includes a single-mode fiber 221 or a fiber collimator 222;

[0086] like Figure 6 As shown, when the size of the functional area on the wafer under test is small, single-mode fiber 221 is used; the area of ​​the smallest detectable functional area in this application is 20um*20um.

[0087] Or, such as Figure 7 As shown, when the size of the functional area on the wafer under test is large, in addition to single-mode fiber 221, fiber collimator 222 can also be used; wherein, the diameter range of the beam formed by fiber collimator 222 is 0.1mm to 2mm.

[0088] In addition, the distance between the wafer under test and the single-mode fiber 221 is controlled between 0 and 20 μm, or the distance between the fiber collimators 222 is controlled between 0 and 1 mm.

[0089] In some possible embodiments, such as Figure 5 As shown, the device also includes a platform 26 for fixing the wafer to be tested, which is movable in both the horizontal and vertical directions.

[0090] In some possible embodiments, the device of this application embodiment further includes a three-axis guide rail for fixing and adjusting the position of the single-mode fiber 221 or the fiber collimator 222.

[0091] In some possible embodiments, such as Figure 6As shown in Figure 7, the photocurrent detection submodule 23 includes a photodetector 231 and a photocurrent measuring instrument 232. The output terminal of the photodetector 231 is connected to the input terminal of the photocurrent measuring instrument 232. The photocurrent measuring range of the photocurrent measuring instrument 232 is 1pA to 10mA.

[0092] In addition, the distance between the wafer under test and the photodetector 231 should be less than or equal to 1 mm.

[0093] Throughout the measurement process, it is necessary to maintain a consistent measurement environment. Therefore, the dark current of the photodetector 231 is detected to ensure that the signal-to-noise ratio of the entire measurement system is greater than 20 dB.

[0094] In some possible embodiments, the apparatus of this application embodiment further includes a detector base for fixing the photodetector 231, the detector base being used to adjust the height of the photodetector 231;

[0095] The detector base can be coarsely adjusted and finely adjusted. The coarse adjustment range is 0-100mm with a coarse adjustment accuracy of 2mm, and the fine adjustment range is 0-10mm with a fine adjustment accuracy of 0.1mm.

[0096] In some possible embodiments, the analysis submodule 25 is also used to change the wavelength of the light signal output by the light source submodule 21, determine the photocurrent intensity corresponding to the functional region at different wavelengths, and obtain the absorption spectrum. The absorption spectrum includes the correspondence between the light signal wavelength and the photocurrent intensity, that is, the relationship curve between the light signal wavelength and the photocurrent intensity value.

[0097] In some possible embodiments, the analysis submodule 25 analyzes and processes the absorption spectrum, specifically by differentiating the curve of the relationship between the wavelength of the optical signal and the photocurrent intensity value to obtain the slope of the curve, and taking the wavelength at the peak of the slope as the current working wavelength.

[0098] In a specific example, the doping performance of a silicon-germanium wafer under test is measured. For instance... Figure 8 As shown, Figure 8 This is a schematic diagram of the absorption spectrum of a silicon-germanium wafer provided in an embodiment of this application. During the measurement process, an automatic wavelength scan is performed by controlling a tunable laser, and the corresponding photocurrent response is recorded to obtain the photocurrent intensity values ​​of the silicon-germanium wafer at different optical signal wavelengths. Then, the absorption spectrum of the functional regions on the silicon-germanium wafer is processed to obtain, as shown below. Figure 9 The absorption curve after treatment is shown, thus from Figure 9 The operating wavelength at the slope peak can be obtained directly. Then, this operating wavelength can be compared with the target operating wavelength required in the actual application to guide the adjustment of the doping concentration.

[0099] In summary, the wafer doping concentration adjustment method and apparatus provided in this application are applied to the wafer doping process. The method tests the doped wafer, measures the absorption spectrum of the functional regions on the wafer, and adjusts the doping concentration based on the analysis results of the absorption spectrum. This allows for the timely detection of wafers with unacceptable doping in the early stages of chip fabrication, preventing further development based on such wafers and reducing development costs. Furthermore, the analysis results of the wafer absorption spectrum can provide directions for improving the doping process, thereby accelerating chip development.

[0100] It should be noted that the apparatus and method embodiments in this application are based on the same concept. Therefore, the method embodiments of this application can achieve the same beneficial effects as the apparatus embodiments.

[0101] It should be noted that the order of the embodiments described above is merely for descriptive purposes and does not represent the superiority or inferiority of the embodiments. Furthermore, specific embodiments have been described above. Other embodiments are within the scope of the appended claims. In some cases, the actions or steps described in the claims can be performed in a different order than that shown in the embodiments and still achieve the desired result. Additionally, the processes depicted in the drawings do not necessarily require a specific or sequential order to achieve the desired result. In some embodiments, multitasking and parallel processing are also possible or may be advantageous.

[0102] The various embodiments in this specification are described in a progressive manner. The same or similar parts between the various embodiments can be referred to each other. Each embodiment focuses on describing the differences from other embodiments.

[0103] The above description is only a preferred embodiment of this application and is not intended to limit this application. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application should be included within the protection scope of this application.

Claims

1. A method for adjusting wafer doping concentration, characterized in that, The method, applied to wafer doping processes, includes: Obtain the initial doped wafer prepared at the initial doping concentration; The initial doped wafer is used as the current wafer to be tested; By applying optical signals of different wavelengths to the wafer under test, the photocurrent intensity of the functional area at different wavelengths is measured to obtain the absorption spectrum; the absorption spectrum includes the correspondence between the optical signal wavelength and the photocurrent intensity. The absorption spectrum is analyzed and processed to obtain the current operating wavelength of the wafer under test; Based on the target operating wavelength and the current operating wavelength, the initial doping concentration is adjusted to obtain the target doping concentration; the target doping concentration is used to prepare the target doped wafer, and the operating wavelength of the target doped wafer is the target operating wavelength; The step of analyzing and processing the absorption spectrum to obtain the current operating wavelength of the wafer under test includes: The slope of the curve is obtained by differentiating the relationship between the wavelength of the optical signal and the photocurrent intensity. The wavelength at the peak of the slope is taken as the current operating wavelength of the wafer under test.

2. The wafer doping concentration adjustment method according to claim 1, characterized in that, The step of adjusting the initial doping concentration based on the target operating wavelength and the current operating wavelength to obtain the target doping concentration includes: Based on the target operating wavelength and the current operating wavelength, the initial doping concentration is adjusted to obtain the intermediate doping concentration; Prepare an intermediate-doped wafer corresponding to the intermediate doping concentration, and use the intermediate-doped wafer as the current test wafer. Repeat the following steps: apply light signals of different wavelengths to the current test wafer and measure the absorption spectrum of the functional region on the current test wafer; analyze and process the absorption spectrum to obtain the current operating wavelength of the current test wafer. Until the current operating wavelength meets the preset operating wavelength range, the intermediate doping concentration is taken as the target doping concentration; the preset operating wavelength range is determined according to the target operating wavelength.

3. A wafer doping concentration adjustment device, characterized in that, The apparatus is used in wafer doping processes and includes: The wafer acquisition module is used to acquire an initially doped wafer prepared at an initial doping concentration; and to use the initially doped wafer as the current wafer to be tested. The absorption spectroscopy analysis module is used to measure the photocurrent intensity of the functional area at different wavelengths by applying light signals of different wavelengths to the wafer under test, and obtain the absorption spectrum; the absorption spectrum includes the correspondence between the light signal wavelength and the photocurrent intensity; the absorption spectrum is analyzed and processed to obtain the current operating wavelength of the wafer under test; The doping concentration adjustment module is used to adjust the initial doping concentration based on the target operating wavelength and the current operating wavelength to obtain the target doping concentration; the target doping concentration is used to prepare the target doped wafer, and the operating wavelength of the target doped wafer is the target operating wavelength; The step of analyzing and processing the absorption spectrum to obtain the current operating wavelength of the wafer under test includes: The slope of the curve is obtained by differentiating the relationship between the wavelength of the optical signal and the photocurrent intensity. The wavelength at the peak of the slope is taken as the current operating wavelength of the wafer under test.

4. The wafer doping concentration adjustment device according to claim 3, characterized in that, The absorption spectroscopy analysis module includes: A light source submodule is disposed on one side of the wafer currently under test, and the light source submodule is used to provide light signals of different wavelengths; The light source import submodule is used to adjust the transmission direction of the light signal and align the light signal with the functional area on the current wafer under test so that the functional area absorbs the light signal. A photocurrent detection submodule is located on the other side of the wafer under test. The photocurrent detection submodule is used to detect the photocurrent signal generated by the optical signal passing through the functional area. The absorption spectroscopy measurement submodule is used to obtain the absorption spectrum of the functional region on the current wafer under test based on the photocurrent signal corresponding to different optical signal wavelengths. The analysis submodule is used to analyze and process the absorption spectrum to obtain the current operating wavelength of the wafer under test.

5. The wafer doping concentration adjustment device according to claim 4, characterized in that, The light source submodule includes a tunable laser; the tunable wavelength range of the tunable laser is 1200nm~2500nm.

6. The wafer doping concentration adjustment device according to claim 4, characterized in that, The light source introduction submodule includes a single-mode fiber or a fiber collimator; the diameter of the beam formed by the fiber collimator is in the range of 0.1mm to 2mm.

7. The wafer doping concentration adjustment device according to claim 3, characterized in that, The device also includes a cargo platform; The platform is used to fix the wafer to be tested; the platform is capable of moving in both the horizontal and vertical directions.

8. The wafer doping concentration adjustment device according to claim 6, characterized in that, The device also includes a three-axis guide rail; The three-axis guide rail is used to fix and adjust the position of the single-mode optical fiber or the optical fiber collimator.

9. The wafer doping concentration adjustment device according to claim 4, characterized in that, The photocurrent detection submodule includes a photodetector and a photocurrent measuring instrument; The output terminal of the photodetector is connected to the input terminal of the photocurrent measuring instrument; The photocurrent measurement range of the photocurrent measuring instrument is 1pA~10mA.

10. The wafer doping concentration adjustment device according to claim 9, characterized in that, The device also includes a detector base for fixing the photodetector; The detector base is also used to adjust the height of the photodetector.

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