Substrate processing method

Abstract

The objective of this invention is to suppress defects caused by suction actions during substrate processing. A substrate processing method includes a step of cleaning the interior of a suction pipe by supplying cleaning fluid from a multi-valve to the suction pipe. A substrate processing apparatus includes: a multi-valve capable of selectively supplying at least one of a processing fluid for processing a substrate and a cleaning fluid for cleaning; a processing fluid nozzle for spraying processing fluid onto the substrate; a connecting pipe connecting the multi-valve and the processing fluid nozzle; and a suction pipe branching from the connecting pipe and used to suction the interior of the connecting pipe.

Description

Technical Field

[0001] The technology disclosed in this application relates to substrate processing technology. Substrates that can be processed include, for example, semiconductor wafers, glass substrates for liquid crystal display devices, substrates for flat panel displays (FPDs) such as organic electroluminescence (EL) display devices, substrates for optical discs, substrates for magnetic disks, substrates for optical discs, glass substrates for photomasks, ceramic substrates, substrates for field emission displays (FEDs), or substrates for solar cells. Background Technology

[0002] In the past, in the manufacturing process of semiconductor substrates (hereinafter referred to as "substrate"), substrate processing equipment was used to perform various processes on the substrate.

[0003] In substrate processing, one or more liquids are sprayed onto the substrate through a nozzle. However, in order to suppress liquid dripping from the nozzle, sometimes a suction action is performed to draw the liquid from the nozzle (for example, see Patent Document 1).

[0004] Existing technical documents

[0005] Patent documents

[0006] Patent Document 1: Japanese Patent Application Publication No. 2016-152375 Summary of the Invention

[0007] The problem that the invention aims to solve

[0008] Processing fluid drawn in by the aforementioned suction action may remain on the suction pipe and sometimes mix with other processing fluids sprayed onto the substrate during subsequent substrate processing. This can lead to unintended over-etching or other issues in later substrate processing, and also reduce the precision of the substrate processing.

[0009] The technology disclosed in this application specification was developed in view of the problems described above, and is a technology for suppressing adverse conditions caused by the suction action in substrate processing.

[0010] Methods for solving problems

[0011] The first aspect of the substrate processing method disclosed in this application is a substrate processing apparatus for processing a substrate, characterized in that the substrate processing apparatus comprises: a multi-port valve capable of selectively supplying at least one of a processing liquid for processing the substrate and a cleaning liquid for cleaning; a processing liquid nozzle for spraying the processing liquid onto the substrate; a connecting pipe connecting the multi-port valve and the processing liquid nozzle; and a suction pipe branching from the connecting pipe and for suctioning the interior of the connecting pipe, the substrate processing method comprising the step of cleaning the interior of the suction pipe by supplying the cleaning liquid from the multi-port valve to the suction pipe.

[0012] The second aspect of the substrate processing method disclosed in this application is associated with the first aspect of the substrate processing method. The multi-valve further includes a drain pipe for draining at least one of the processing liquid and the cleaning liquid within the multi-valve. The substrate processing method further includes the step of supplying the cleaning liquid from the multi-valve to the drain pipe.

[0013] The third-party substrate processing method disclosed in this application is associated with a second-method substrate processing method, wherein the step of supplying the cleaning fluid from the multi-valve to the drain pipe is performed simultaneously with the step of cleaning the inside of the suction pipe.

[0014] The fourth type of substrate processing method disclosed in this application is associated with any of the first to third types of substrate processing methods, wherein the processing liquid nozzle is capable of being located in a processing position for processing the substrate and a retraction position for retracting from the substrate, and the step of cleaning the inside of the suction pipe is performed while the processing liquid nozzle is in the retraction position.

[0015] The fifth type of substrate processing method disclosed in this application is associated with the fourth type of substrate processing method. The substrate processing apparatus further includes a rinsing liquid nozzle for spraying rinsing liquid onto the substrate. During the step of cleaning the inside of the suction pipe, the rinsing liquid nozzle sprays the rinsing liquid onto the substrate at the processing position.

[0016] The sixth substrate processing method disclosed in this application is associated with any of the first to fifth substrate processing methods. The substrate processing apparatus further includes: a conductivity meter disposed on the suction pipe and used to measure the conductivity within the suction pipe; and a stop unit used to stop the supply of cleaning fluid from the multi-valve to the suction pipe when the conductivity value output from the conductivity meter is below a preset threshold.

[0017] The effects of the invention

[0018] According to at least a first aspect of the technology disclosed in this application specification, since the inside of the suction pipe is thoroughly cleaned, adverse conditions caused by the suction action during substrate processing can be suppressed.

[0019] Furthermore, the objectives, features, aspects, and advantages related to the technology disclosed in this application will become clearer through the following detailed description and accompanying drawings. Attached Figure Description

[0020] Figure 1 This is a top view that schematically illustrates an example of the structure of the substrate processing apparatus according to the embodiment.

[0021] Figure 2 It means Figure 1 The diagram shows an example of the structure of the control unit.

[0022] Figure 3 This is a diagram illustrating an example of the structure of a processing unit.

[0023] Figure 4 This is a diagram that schematically illustrates an example of the structure of the piping connected to the processing liquid nozzle in the structure of the substrate processing apparatus according to the embodiment.

[0024] Figure 5 This diagram shows the state in which the treatment fluid nozzle is moved to the retracted position.

[0025] In the figure, 1: substrate processing device; 10: rotary chuck; 10A: rotating base; 10C: rotating shaft; 10D: rotary motor; 12: processing cup; 20: processing liquid nozzle; 22: nozzle arm; 22A: arm; 22B: shaft; 22C: actuator; 30: gas nozzle; 31: gas valve; 32: gas supply pipe; 40: multi-port valve; 40A: connection part; 41, 58: drain pipes; 41A, 42A, 43A, 44A, 45A, 50A, 52A: valves; 42, 43, 44, 45: supply pipes. ; 50: Connecting piping; 52: Suction piping; 54: Conductivity meter; 56: Suction mechanism; 60: Fluid nozzle; 61: Fluid valve; 62: Fluid supply pipe; 90: Control unit; 91: CPU; 92: ROM; 93: RAM; 94: Recording device; 94P: Processing program; 95: Bus; 96: Input unit; 97: Display unit; 98: Communication unit; 180: Chamber; 600: Processing unit; 601: Loading port; 602: Indexing robot; 603: Central robot; 604: Substrate mounting unit. Detailed Implementation

[0026] Hereinafter, embodiments will be described with reference to the accompanying drawings. In the following embodiments, detailed features are shown for the purpose of illustrating the technology, but these are merely illustrative, and since all embodiments can be implemented, they are not necessarily all essential features.

[0027] Furthermore, the accompanying drawings are schematic representations, and for ease of explanation, structures may be appropriately omitted or simplified in the drawings. Additionally, the sizes and relative positions of structures shown in different drawings may not be accurately depicted and can be appropriately modified. Furthermore, in drawings that are not sectional views, such as top views, shading lines are sometimes used to facilitate understanding of the embodiments.

[0028] Furthermore, in the following description, the same reference numerals are used to illustrate the same constituent elements, and their names and functions are also the same. Therefore, detailed descriptions of them are sometimes omitted to avoid repetition.

[0029] Furthermore, in the descriptions contained in this application, when a constituent element is described as "possessing," "comprises," or "has," unless otherwise specified, it is not an expression of exclusion of the existence of other constituent elements.

[0030] Furthermore, in the description described in this application, the expression "positive direction of the axis" or "negative direction of the axis" will be taken as the positive direction along the direction of the arrow of the axis shown in the figure, and the direction of the axis opposite to the arrow shown in the figure will be taken as the negative direction.

[0031] Furthermore, in the description described in this application, even when terms such as "upper," "lower," "left," "right," "side," "bottom," "top," or "back" are used to indicate a specific position or direction, these terms are used for the purpose of making the content of the embodiment easier to understand, and are unrelated to the position or direction when the embodiment is actually implemented.

[0032] Furthermore, in the description of this application, when referred to as "...the upper surface" or "...the lower surface," etc., it includes not only the upper or lower surface of the constituent element that is the object itself, but also the state in which other constituent elements are formed on the upper or lower surface of the constituent element that is the object. That is, for example, when described as "B provided on the upper surface of A," it does not preclude the placement of other constituent element "C" between A and B.

[0033] <Implementation Method>

[0034] The substrate processing apparatus and substrate processing method described below will be explained.

[0035] <Structure of the substrate processing apparatus>

[0036] Figure 1 This is a top view schematically illustrating an example of the structure of the substrate processing apparatus 1 according to this embodiment. The substrate processing apparatus 1 includes a loading port 601, an indexing robot 602, a central robot 603, a control unit 90, and at least one processing unit 600 (in... Figure 1 (The middle section consists of four processing units).

[0037] The processing unit 600 is a monolithic device capable of substrate processing; specifically, it is a device for removing organic matter adhering to the substrate W. The organic matter adhering to the substrate W is, for example, a used photoresist film. This photoresist film is used, for example, as an implantation mask for an ion implantation step.

[0038] Additionally, the processing unit 600 may have a chamber 180. In this case, by controlling the atmosphere within the chamber 180 by the control unit 90, the processing unit 600 can perform substrate processing in a desired atmosphere.

[0039] The control unit 90 is capable of controlling the operation of each structure in the substrate processing apparatus 1. The carrier C is a receiving container for holding the substrate W. Additionally, the loading port 601 is a receiving container holding mechanism that holds multiple carriers C. The indexing robot 602 is capable of transporting the substrate W between the loading port 601 and the substrate placement section 604. The central robot 603 is capable of transporting the substrate W between the substrate placement section 604 and the processing unit 600.

[0040] With the above structure, the indexing robot 602, the substrate mounting unit 604, and the central robot 603 function as a transport mechanism for moving the substrate W between each processing unit 600 and the loading port 601.

[0041] The unprocessed substrate W is removed from the carrier C by the indexing robot 602. Then, the unprocessed substrate W is transferred to the central robot 603 via the substrate placement section 604.

[0042] The central robot 603 moves the unprocessed substrate W into the processing unit 600. Then, the processing unit 600 processes the substrate W.

[0043] The processed substrate W in processing unit 600 is removed from processing unit 600 by central robot 603. Then, as needed, the processed substrate W is transferred to indexing robot 602 via substrate placement unit 604 after passing through other processing units 600. Indexing robot 602 moves the processed substrate W into carrier C. Through the above, the substrate W is processed.

[0044] Figure 2 It means Figure 1The diagram shows an example of the structure of the control unit 90. The control unit 90 can be constructed from a general computer with circuitry. Specifically, the control unit 90 includes a central processing unit (CPU) 91, a read-only memory (ROM) 92, a random access memory (RAM) 93, a recording device 94, an input unit 96, a display unit 97, a communication unit 98, and a bus 95 connecting them to each other.

[0045] ROM 92 stores the basic program. RAM 93 serves as the operating area for the CPU 91 to perform specified processing. Recording device 94 is composed of a non-volatile recording device such as flash memory or hard disk. Input unit 96 is composed of various switches or touch panels, etc., to receive input setting instructions such as processing schemes from the user. Display unit 97 is composed of, for example, a liquid crystal display device and lamps, and displays various information under the control of CPU 91. Communication unit 98 has data communication capabilities via local area network (LAN) or the like.

[0046] The recording device 94 is pre-set with a control function. Figure 1 The CPU 91 controls each structure in the substrate processing apparatus 1 based on the set values ​​of the CPU 94P by executing the processing program 94P. Alternatively, the processing program 94P can be recorded on an external recording medium. If this recording medium is used, the processing program 94P can be installed in the control unit 90. Furthermore, some or all of the functions performed by the control unit 90 do not necessarily need to be implemented in software; they can also be implemented in hardware such as dedicated logic circuits.

[0047] <About the processing unit>

[0048] Figure 3 This is a diagram illustrating an example of the structure of processing unit 600. (See diagram for example.) Figure 3 As shown, the processing unit 600 includes: a rotary chuck 10 that holds a substrate W in a generally horizontal position while rotating the substrate W about a vertical rotation axis Z1 passing through the center of the substrate W; a processing liquid nozzle 20 that sprays processing liquid onto the substrate W; a nozzle arm 22 with the processing liquid nozzle 20 mounted at its end; a cylindrical processing cup 12 that surrounds the rotary chuck 10 about the rotation axis Z1 of the substrate W; a rinsing liquid nozzle 60; and a gas nozzle 30.

[0049] The processing liquid nozzle 20 can spray out various processing liquids, but multiple processing liquid nozzles 20 can also be provided corresponding to each processing liquid. The processing liquid nozzle 20 sprays the processing liquid onto the upper surface of the substrate W. Here, the processing liquid is a liquid used to process the substrate W, including etching solutions (such as a mixed solution of ammonia and hydrogen peroxide water (SC1)) for etching the substrate W, functional liquids such as CO2 water, organic solvents such as IPA (isopropanol), or pure water (DIW).

[0050] The rotary chuck 10 includes: a circular rotating base 10A that vacuum-adhedes the lower surface of a generally horizontal substrate W; a rotating shaft 10C that extends downward from the center of the rotating base 10A; and a rotary motor 10D that rotates the substrate W adsorbed on the rotating base 10A by rotating the rotating shaft 10C. Alternatively, a clamping chuck with multiple chuck pins protruding upward from the outer periphery of the upper surface of the rotating base can be used instead of the rotary chuck 10 to clamp the periphery of the substrate W.

[0051] The nozzle arm 22 includes an arm portion 22A, a shaft 22B, and an actuator 22C. The actuator 22C adjusts the angle of the shaft 22B around its axis. One end of the arm portion 22A is fixed to the shaft 22B, while the other end of the arm portion 22A is disposed separately from the shaft 22B. Furthermore, a processing liquid nozzle 20 is mounted on the other end of the arm portion 22A. Thus, the processing liquid nozzle 20 is configured to oscillate in the radial direction of the substrate W.

[0052] When the position for spraying processing liquid onto the substrate W to process the substrate is set as the processing position, and the position for retracting from the top of the substrate W (i.e., the position where the substrate W and the processing liquid nozzle 20 do not overlap when viewed from above) is set as the retraction position, the nozzle arm 22 can move the processing liquid nozzle 20 to the processing position and the retraction position.

[0053] Furthermore, the moving direction of the oscillating processing liquid nozzle 20 only needs to have a component in the radial direction of the substrate W, and does not need to be strictly parallel to the radial direction of the substrate W.

[0054] Here, the nozzle arm 22 can also be raised and lowered in the vertical direction by means of a motor (not shown). In this case, the distance between the processing liquid nozzle 20 mounted at the end of the nozzle arm 22 and the upper surface of the substrate W can be adjusted by raising and lowering the nozzle arm 22.

[0055] The control unit 90 controls the rotational speed of the rotary motor 10D while spraying the processing liquid from the processing liquid nozzle 20 onto the upper surface of the substrate W. Furthermore, the control unit 90 controls the drive of the actuator 22C to cause the processing liquid nozzle 20 to oscillate on the upper surface of the substrate W.

[0056] The processing unit 600 includes a rinsing fluid nozzle 60 that sprays rinsing fluid above the substrate W. The rinsing fluid nozzle 60 can be fixed above the substrate W. The rinsing fluid nozzle 60 is connected to a rinsing fluid supply pipe 62 having a rinsing fluid valve 61. The rinsing fluid valve 61 is controlled to open and close by a control unit 90. The rinsing fluid nozzle 60 sprays rinsing fluid toward the upper surface of the substrate W held in the rotary chuck 10.

[0057] Rinse fluid is supplied from a rinsing fluid supply source to a rinsing fluid nozzle 60 via a rinsing fluid supply pipe 62. DIW (deionized water) or similar solutions are used as the rinsing fluid. By supplying rinsing fluid to the substrate W from the rinsing fluid nozzle 60, deposits and other contaminants attached to the substrate W can be rinsed away.

[0058] The processing unit 600 includes a gas nozzle 30 for blowing gas from above the substrate W. The gas nozzle 30 is supported vertically above the rotary chuck 10. A gas supply pipe 32 with a gas valve 31 is connected to the gas nozzle 30. The gas valve 31 is controlled to open and close by the control unit 90.

[0059] Gas is supplied from a gas supply source to the gas nozzle 30 via the gas supply pipe 32. Examples of gases supplied to the gas nozzle 30 include inert gases such as nitrogen (N2), dry air, or clean air.

[0060] Figure 4 This is a diagram that schematically illustrates an example of the piping structure connected to the processing liquid nozzle 20 in the structure of the substrate processing apparatus 1 of this embodiment.

[0061] like Figure 4 As shown, the multi-port valve 40 is connected to the treatment fluid nozzle 20 via the connecting pipe 50, and thus, multiple treatment fluid supply sources are connected to the multi-port valve 40.

[0062] The multi-port valve 40 includes: a connection portion 40A; a valve 50A connecting to a pipe 50, which is connected to the connection portion 40A from a downstream side; a valve 42A connecting to a supply pipe 42, which is connected to the connection portion 40A from an upstream side; a valve 43A connecting to a supply pipe 43, which is connected to the connection portion 40A from an upstream side; a valve 44A connecting to a supply pipe 44, which is connected to the connection portion 40A from an upstream side; a valve 45A connecting to a supply pipe 45, which is connected to the connection portion 40A from an upstream side; and a valve 41A connecting to a drain pipe 41, which is connected to the connection portion 40A. The multi-port valve 40 selectively supplies at least one of a treatment fluid or a cleaning fluid described later from these supply pipes.

[0063] Supply pipe 42 supplies, for example, ammonia (NH3). Supply pipe 43 supplies, for example, hydrogen peroxide (H2O2). Supply pipe 44 supplies, for example, pure water (DIW). Supply pipe 45 supplies, for example, CO2 water.

[0064] The drain pipe 41 drains the treatment fluid or the cleaning fluid described later from the connection part 40A. In addition, it is preferable that the drain pipe 41 is connected to the vertical upper side of the connection part 40A compared with the supply pipes (supply pipe 42, supply pipe 43, supply pipe 44 or supply pipe 45) mentioned above.

[0065] A suction pipe 52, which branches downstream of valve 50A, is connected to the connecting pipe 50. The suction pipe 52 is equipped with a suction mechanism 56, a conductivity meter 54, and valve 52A. Furthermore, the suction pipe 52 merges with the drain pipe 58 downstream.

[0066] The suction mechanism 56 is, for example, a siphon-type suction mechanism. Here, a siphon-type suction mechanism refers to a mechanism that uses liquid to fill the pipe (suction pipe 52) and uses the principle of siphon to draw (drain) the liquid in the connecting pipe 50. Alternatively, the suction mechanism 56 can also be a jet-type suction mechanism.

[0067] The conductivity meter 54 is a device for measuring the conductivity within the suction pipe 52. For example, the conductivity meter 54 measures the conductivity of liquids (including processing solutions containing pure water) remaining in the suction pipe 52. Alternatively, the conductivity meter 54 may not be included, or it may be installed downstream of the branch point of the suction pipe 52 in the connecting pipe 50. When the conductivity meter 54 is installed in the connecting pipe 50, the conductivity of the processing solution ejected from the processing solution nozzle 20 can be directly measured, which is useful for managing the concentration of the processing solution used in substrate processing.

[0068] <Regarding the operation of the substrate processing device>

[0069] Next, refer to Figures 1 to 4 The operation of the substrate processing apparatus 1 according to this embodiment will be explained.

[0070] Indexing robot 602 transports substrate W from carrier C in loading port 601 to substrate placement section 604. Central robot 603 transports substrate W from substrate placement section 604 to processing unit 600. Processing unit 600 processes substrate W. Central robot 603 transports substrate W from processing unit 600 to substrate placement section 604. Indexing robot 602 transports substrate W from substrate placement section 604 to carrier C in loading port 601.

[0071] The aforementioned processing of the substrate W is performed by supplying processing liquid to the processing liquid nozzle 20 under the control of the control unit 90. This processing liquid is, for example, an etching solution used to etch metal layers (e.g., metal layers formed of cobalt, aluminum, tungsten, copper, ruthenium, molybdenum, titanium nitride, or tantalum nitride) formed on the upper surface of the substrate W.

[0072] Specifically, under the control of the control unit 90, valve 41A is closed and valve 50A is opened. Furthermore, under the control of the control unit 90, at least one of valves 42A, 43A, 44A, and 45A is opened. Here, which of the following valves is opened can be changed depending on the type of processing fluid supplied.

[0073] Then, processing fluid is supplied from the corresponding supply source to the multi-valve 40, and the processing fluid is supplied from the multi-valve 40 to the processing fluid nozzle 20 via the connecting pipe 50. Then, processing fluid is supplied to the corresponding substrate W.

[0074] At this time, valve 52A of the suction pipe 52 connected to the connecting pipe 50 is closed, and the suction mechanism 56 does not operate.

[0075] After the substrate W processing is completed, the supply of processing liquid to the processing liquid nozzle 20 is stopped under the control of the control unit 90. Then, under the control of the control unit 90, valve 52A is opened, and the suction mechanism 56 is activated while valve 52A is open. In this way, the inside of the suction pipe 52 is drawn in. That is, the processing liquid remaining in the connecting pipe 50 and the suction pipe 52 is introduced into the suction pipe 52 and then drained through the drain pipe 58.

[0076] On the other hand, during substrate processing of the same or different substrates W, the substrate processing apparatus 1 can switch the opening and closing of each valve in order to clean the piping structure including the multi-valve 40.

[0077] In this case, firstly, cleaning fluid is supplied to the multi-valve 40 under the control of the control unit 90. Here, the cleaning fluid is, for example, pure water (DIW), and the time for the cleaning fluid to be supplied to the multi-valve 40 is, for example, about a few seconds.

[0078] Specifically, valves 41A and 44A are opened under the control of the control unit 90. Additionally, valves 42A, 43A, 45A, and 50A are closed under the control of the control unit 90.

[0079] Then, cleaning fluid is supplied to the corresponding multi-valve 40, and then drained from the drain pipe 41, thereby cleaning the inside of the multi-valve 40 with the cleaning fluid.

[0080] Next, under the control of the control unit 90, cleaning fluid is supplied to the connecting pipe 50 via the multi-valve 40. Here, the cleaning fluid is, for example, pure water (DIW), and the time for the cleaning fluid to be supplied to the connecting pipe 50 is, for example, about a few seconds.

[0081] Specifically, valve 44A and valve 50A are opened under the control of control unit 90. Additionally, valves 42A, 43A, 45A, and 41A are closed under the control of control unit 90.

[0082] Then, the cleaning fluid is supplied to the connecting pipe 50 and the treatment fluid nozzle 20 via the corresponding multi-valve 40, and then discharged from the lower part of the treatment cup 12 to the drain pipe 58, thereby cleaning the inside of the connecting pipe 50 and the inside of the treatment fluid nozzle 20 with the cleaning fluid.

[0083] At this time, by opening valve 52A of the suction pipe 52 connected to the connecting pipe 50, cleaning fluid can be supplied to the suction pipe 52. The cleaning fluid supplied to the suction pipe 52 is further discharged into the drain pipe 58. In this way, the inside of the suction pipe 52 is cleaned by the cleaning fluid.

[0084] By supplying cleaning fluid to the suction pipe 52 as described above, the processing fluid remaining in the suction pipe 52 after the substrate processing suction action can be effectively cleaned.

[0085] Following the substrate treatment, the suction action leaves residual treatment fluid in the suction pipe 52, primarily originating from the branch of the connecting pipe 50. Furthermore, if this residual treatment fluid mixes with other types of treatment fluid supplied to the substrate W at subsequent times, it can sometimes produce unexpected effects (over-etching, or under-etching, etc.). According to the inventors' experiments, it takes approximately tens of seconds during cleaning of only the connecting pipe 50 before this mixing becomes sufficiently minimal.

[0086] On the other hand, according to the cleaning method of directly supplying cleaning fluid to the suction pipe 52 as shown in this embodiment, a few seconds before the above-mentioned mixing is sufficiently reduced is sufficient.

[0087] Furthermore, based on the conductivity value of the suction pipe 52 output from the conductivity meter 54 installed in the suction pipe 52, the concentration of the treatment liquid remaining in the suction pipe 52 can be calculated, and thus the end time of the above-mentioned cleaning method in which the cleaning liquid is directly supplied to the suction pipe 52 can be controlled.

[0088] That is, if the conductivity within the suction pipe 52 falls below a preset threshold (e.g., a value where the mixing is sufficiently reduced, such as 0.05 μS / cm or higher and 0.1 μS / cm or lower), the control unit 90 can close valve 52A to stop supplying cleaning fluid to the suction pipe 52. Alternatively, if the conductivity does not fall below the aforementioned threshold after a preset cleaning time, valve 52A can be reopened to perform additional cleaning and resume supplying cleaning fluid to the suction pipe 52. The aforementioned threshold can be predetermined, for example, based on the relationship between the measured conductivity and the amount of mixing in the actual sprayed treatment fluid.

[0089] Here, during the cleaning of the connecting pipe 50 and the suction pipe 52, cleaning fluid is sprayed from the processing fluid nozzle 20. Therefore, during this cleaning, it is preferable that the processing fluid nozzle 20 is retracted from above the substrate W. Specifically, as... Figure 5 As shown in the example, when cleaning the connecting pipe 50 and the suction pipe 52, it is preferable to control the drive of the nozzle arm 22 through the control unit 90, so that the treatment fluid nozzle 20 moves to the retracted position. Furthermore, Figure 5 This diagram shows the state in which the treatment fluid nozzle 20 is moved to the retracted position.

[0090] Additionally, to prevent the substrate W from drying between the cleaning processes of the connecting pipe 50 and the suction pipe 52, such as... Figure 5 As shown, preferably during the cleaning process described above, rinsing fluid is supplied to the substrate W from the rinsing fluid nozzle 60.

[0091] In addition, as described above, the cleaning of the suction pipe 52 is performed during the cleaning of the treatment fluid nozzle 20, but it is also possible to clean only the suction pipe 52.

[0092] Furthermore, in the above description, the cleaning of the suction pipe 52 is performed after the cleaning of the multi-port valve 40. However, the suction pipe 52 can be cleaned first, or the multi-port valve 40 can be skipped and only the suction pipe 52 can be cleaned. Alternatively, the suction pipe 52 and the multi-port valve 40 can be cleaned simultaneously by opening valves 41A, 50A, and 52A.

[0093] Furthermore, when multiple connecting pipes 50 are connected to a multi-port valve 40 and correspondingly multiple treatment fluid nozzles 20 are provided, the cleaning of the multi-port valve 40, connecting pipes 50, and suction pipes 52 can also be performed simultaneously in the multiple connecting pipes 50 and the corresponding multiple suction pipes 52. This can shorten the cleaning time.

[0094] Furthermore, the treatment fluid can be sprayed from different treatment fluid nozzles 20 before and after cleaning the multi-valve 40, connecting pipe 50 and suction pipe 52.

[0095] <Regarding the effects produced by the above-described implementation methods>

[0096] Next, examples of the effects produced by the embodiments described above will be shown. Furthermore, in the following description, the effects are described based on the specific structures exemplified in the embodiments described above; however, other specific structures shown in this specification may be used to produce the same effects. That is, for convenience, sometimes only one of the corresponding specific structures will be described representatively below, but other specific structures corresponding to the representatively described specific structures may also be used.

[0097] According to the embodiments described above, in the substrate processing method using a substrate processing apparatus for processing a substrate W, the substrate processing apparatus includes a multi-port valve 40, a processing liquid nozzle 20, a connecting pipe 50, and a suction pipe 52. The multi-port valve 40 is capable of selectively supplying at least one of a processing liquid for processing the substrate W and a cleaning liquid for cleaning. The processing liquid nozzle 20 sprays the processing liquid onto the substrate W. The connecting pipe 50 connects the multi-port valve 40 to the processing liquid nozzle 20. The suction pipe 52 branches off from the connecting pipe 50. Furthermore, the suction pipe 52 draws into the connecting pipe 50. Moreover, the substrate processing method includes a step of cleaning the suction pipe 52 by supplying cleaning liquid from the multi-port valve 40 to the suction pipe 52.

[0098] With this structure, since the inside of the suction pipe 52 is thoroughly cleaned, it is possible to suppress defects caused by the processing liquid remaining in the suction pipe 52 being ejected onto the substrate W during subsequent substrate processing. If the processing liquid remaining in the suction pipe 52 is an etchant, it is possible to suppress accidental over-etching during subsequent substrate processing. Furthermore, if the processing liquid remaining in the suction pipe 52 is pure water (low-conductivity DIW), the longer it remains in the suction pipe 52, thereby suppressing accidental arcing during subsequent substrate processing caused by the pure water, which is conductive due to the mixing of atmospheric O2 or CO2.

[0099] Furthermore, the same effect can be achieved even if other structures shown in this specification are appropriately added to the above structure, that is, even if other structures not mentioned in this specification are appropriately added.

[0100] Furthermore, according to the embodiments described above, the multi-valve 40 includes a drain pipe 41 for discharging at least one of the processing liquid and cleaning liquid within the multi-valve 40. Moreover, the substrate processing method includes a step of supplying cleaning liquid from the multi-valve 40 to the drain pipe 41. With this structure, by supplying cleaning liquid from the multi-valve 40 to the drain pipe 41, the interior of the multi-valve 40 can be cleaned. Therefore, it is possible to suppress defects caused by the processing liquid remaining in the multi-valve 40 being sprayed onto the substrate W during subsequent substrate processing.

[0101] Furthermore, according to the embodiment described above, the step of supplying cleaning fluid from the multi-valve 40 to the drain pipe 41 and the step of cleaning the suction pipe 52 are performed simultaneously. With this structure, since the multi-valve 40 and the suction pipe 52 are cleaned simultaneously, the cleaning time can be shortened.

[0102] Furthermore, according to the embodiments described above, the processing liquid nozzle 20 can be positioned in a processing position for processing the substrate W and a retraction position for retracting from the substrate W. The step of cleaning the suction pipe 52 is performed while the processing liquid nozzle 20 is in the retraction position. With this structure, since the cleaning of the suction pipe 52 is performed while the processing liquid nozzle 20 is in the retraction position, even if the cleaning liquid supplied to the suction pipe 52 is ejected from the processing liquid nozzle 20, contamination of the substrate W by the ejected cleaning liquid can be prevented.

[0103] Furthermore, according to the embodiments described above, the substrate processing apparatus includes a rinsing fluid nozzle 60 for spraying rinsing fluid onto the substrate W. Moreover, during the cleaning step within the suction pipe 52, the rinsing fluid nozzle 60 sprays rinsing fluid onto the substrate W at the processing position. With this structure, the substrate W can be rinsed during the cleaning within the suction pipe 52, thus enabling efficient substrate processing.

[0104] Furthermore, according to the embodiments described above, the substrate processing apparatus includes: a conductivity meter 54 disposed in the suction pipe 52 and used to measure the conductivity within the suction pipe 52; and a stop unit that stops the supply of cleaning fluid from the multi-valve 40 to the suction pipe 52 when the conductivity value output from the conductivity meter 54 is below a predetermined threshold. Here, the stop unit corresponds, for example, to a control unit 90. With this structure, by controlling the control unit 90, the cleaning time within the suction pipe 52 can be adjusted according to the conductivity value output from the conductivity meter 54, thus preventing the cleaning time within the suction pipe 52 from becoming too long and effectively removing the processing fluid remaining in the suction pipe 52.

[0105] <Regarding variations of the embodiments described above>

[0106] In the embodiments described above, the material, size, shape, relative configuration relationship or implementation conditions of each component are sometimes described, but these are just examples in all respects and are not limited thereto.

[0107] Therefore, within the scope of the technology disclosed in this application, numerous variations and equivalents (not illustrated) are contemplated. For example, variations in at least one constituent element may include additions or omissions.

[0108] Furthermore, in the embodiments described above, if the material name is described without special specification, other additives, such as alloys, are included in the material, as long as there is no contradiction.

Claims

1. A substrate processing method, comprising a substrate processing apparatus for processing a substrate, characterized in that, The substrate processing apparatus includes: A multi-port valve capable of selectively supplying at least one of a processing liquid for processing the substrate and a cleaning liquid for cleaning. A processing liquid nozzle for spraying the processing liquid onto the substrate; Connecting piping, which connects the multi-valve to the treatment fluid nozzle; as well as A suction pipe, branching from the connecting pipe, is used to draw air from inside the connecting pipe. The multi-port valve is provided with: a drain pipe for draining at least one of the treatment fluid and the cleaning fluid within the multi-port valve, and a first valve for opening and closing the drain pipe; and a second valve for opening and closing the connecting pipe on the downstream side of the connection portion connected to the connecting pipe and the upstream side of the branch. The suction pipe is equipped with a third valve for opening and closing the suction pipe. After cleaning by supplying the cleaning fluid into the drain pipe by opening the first valve and closing the second valve, the first valve is closed and the second and third valves are opened to supply the cleaning fluid into the suction pipe.

2. The substrate processing method according to claim 1, characterized in that, The processing liquid nozzle can be positioned at a processing position for processing the substrate and a retraction position for retracting from the substrate. The step of cleaning the inside of the suction piping is performed while the treatment fluid nozzle is in the retracted position.

3. The substrate processing method according to claim 2, characterized in that, The substrate processing apparatus further includes a rinsing fluid nozzle for spraying rinsing fluid onto the substrate. During the step of cleaning the inside of the suction pipe, the flushing fluid nozzle sprays the flushing fluid onto the substrate at the processing location.

4. A substrate processing method, comprising a substrate processing apparatus for etching a substrate having a metal layer formed on its upper surface, characterized in that, The substrate processing apparatus includes: A multi-port valve capable of selectively supplying at least one of a processing solution for etching the substrate and a cleaning solution for cleaning. A processing liquid nozzle for spraying the processing liquid onto the substrate; Connecting piping, which connects the multi-valve to the treatment fluid nozzle; A suction pipe, which branches off from the connecting pipe, and is provided with a suction mechanism for suctioning inside the connecting pipe; as well as A conductivity meter, located between the branch of the connecting pipe and the suction mechanism, is used to measure the conductivity within the suction pipe. Cleaning is initiated within the suction piping by supplying the cleaning fluid from the multi-valve to the suction piping. If the conductivity value output from the conductivity meter is below a preset threshold, the supply of cleaning fluid from the multi-valve to the suction pipe is stopped.

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