A pure silicon extraction system based on the coupling of a dish-shaped solar concentrator and a high-concentration photovoltaic system

Abstract

A pure silicon extraction system based on the coupling of a dish-shaped solar concentrator and a high-concentration photovoltaic system, which relates to the technical fields of chemical reactions, electrolysis, high-concentration light collection, and solar energy applications. The pure silicon extraction device includes an SiCl4 synthesis system, a full-automatic capture and transmission system, a seawater electrolysis system, a variety of concentrated photovoltaic-thermoelectric coupling systems, an H2O circulation heat exchange system, and a pure silicon extraction system. It can automatically and intelligently identify and control the operation of the device; by using the coupling of dish-shaped solar light collection and a high-concentration photovoltaic system, it fully utilizes the photothermal and photovoltaic energy to provide different temperatures required by the device; it performs double-cycle condensation on SiCl4 to effectively reduce resource losses; and combines seawater electrolysis to generate the required H2 and Cl2, while synthesizing HCL which can be used for the decomposition of initial silicate, so as to extract pure silicon from silicate such as cement waste in a green, efficient, and pollution-free manner, which is beneficial to the development of the semiconductor industry.

Description

Technical Field

[0001] The present invention is a fully automatic control pure silicon extraction device based on the coupling of a dish-shaped solar concentrator and a high-concentration photovoltaic system, and relates to the technical fields of chemical reactions, electrolysis, high-concentration light collection, and solar energy applications. Background Art

[0002] At present, the vast majority of semiconductor devices in the world are manufactured with silicon as the basic material, occupying more than 90% of the global semiconductor product market share, and are widely used in low-voltage, low-frequency, and low-power fields such as integrated circuits and some power semiconductors. The downstream covers consumer electronics, communications, photovoltaic, military, and aerospace, etc.

[0003] As one of the important building materials, cement has the characteristics of corrosion resistance, high temperature resistance, earthquake resistance, etc., and is widely used in industrial buildings, civil buildings, etc. In 2020, the cement output in China was 2.4 billion tons, accounting for about 57% of the world. The huge output also brings about a large amount of waste of cement. To effectively deal with the large amount of waste of cement, innovative development proposes to extract useful substances from it. Now, a fully automatic control pure silicon extraction device based on the coupling of a dish-shaped solar concentrator and a high-concentration photovoltaic system is proposed, which uses solar energy and seawater to automatically extract pure silicon from silicate, is green and environmentally friendly, and is conducive to the development of the semiconductor silicon industry. Summary of the Invention

[0004] The technical problem to be solved by the present invention is: To effectively deal with the large amount of waste of cement, innovative development proposes to extract useful substances from it. Now, a fully automatic control pure silicon extraction device based on the coupling of a dish-shaped solar concentrator and a high-concentration photovoltaic system is proposed, which uses solar energy and seawater to automatically extract pure silicon from silicate, is green and environmentally friendly, and is conducive to the development of the semiconductor silicon industry.

[0005] The technical solution adopted by the present invention to solve its technical problems is:

[0006] A pure silicon extraction system based on the coupling of a dish-shaped solar concentrator and a high-concentration photovoltaic system, the pure silicon extraction device includes SiCl 4 synthesis system, fully automatic capture and transmission system, seawater electrolysis system, multiple concentrating photovoltaic thermoelectric coupling systems, H 2 O circulation heat exchange system and pure silicon extraction system. A part of the multiple concentrating photovoltaic thermoelectric coupling systems 4 is mounted on the SiCl4 synthesis system 1 at the beginning of the device, and the other part runs through the whole device through the connected H2O circulation heat exchange system; the SiCl4 synthesis system 1, the fully automatic capture and transmission system 2, the pure silicon extraction system, and the seawater electrolysis system 3 are connected in series in turn to form a closed pipeline structure.

[0007] The described SiCl4 synthesis system includes a silicic acid synthesis chamber 11, a waste liquid tank 12, a transfer pipeline 13, a pump 14, a SiO2 synthesis chamber 15, a SiO2 transfer pipe 16, a high-temperature synthesis box for crude silicon 17, a carbon storage tower 18, and a temperature sensor 19. The waste liquid tank 12, the silicic acid synthesis chamber 11, and the SiO2 synthesis chamber 15 are connected in series in sequence through the transfer pipeline 13; one end of the output end of the SiO2 synthesis chamber 15 is connected to the water tank 61 through a steam pipeline 65, and the other end is connected to the high-temperature synthesis box for crude silicon 17 through the SiO2 transfer pipe 16 and a catcher I 23; the carbon storage tower 18 is connected to the high-temperature synthesis box for crude silicon 17 through a conveyor belt 26; temperature sensors 19 are arranged inside the high-temperature synthesis box for crude silicon 17 and on the SiO2 synthesis chamber 15; pumps 14 are arranged on the transfer pipeline 13 between the silicic acid synthesis chamber 11 and the SiO2 synthesis chamber 15 and on the steam pipeline 65 between the SiO2 synthesis chamber 15 and the water tank 61;

[0008] The described fully automatic capture and transfer system includes a bracket 21, an annular slide rail 22, a catcher I 23, a catcher II 24, a catcher III 25, and a conveyor belt 26; the bracket 21 is located between the annular slide rail 22 and the butterfly concentrator 41 for stably supporting the device; the high-temperature synthesis box for crude silicon 17 is carried on the annular slide rail 22; the catcher I 23, the catcher II 24, and the catcher III 25 can capture and connect to the high-temperature synthesis box for crude silicon 17; the conveyor belt 26 connects the carbon storage tower 18 and the high-temperature synthesis box for crude silicon 17;

[0009] The described seawater electrolysis system includes a U-shaped electrolysis chamber 31, an anode 32, a cathode 33, a Cl2 transfer pipe 34, an H2 transfer pipe 35, a Cl2 collection box 36, a throttle valve 37, and an HCL synthesis chamber 38. The anode and cathode of the U-shaped electrolysis chamber 31 are connected to the storage battery box 49 through transmission lines, and the anode 32 of the U-shaped electrolysis chamber 31 is connected to the Cl2 collection box 36 through the Cl2 transfer pipe 34, and the cathode 33 is connected to the HCL synthesis chamber 38 and the pure silicon synthesis chamber 56 in the pure silicon extraction system through the H2 transfer pipe 35 respectively; the output end of the Cl2 collection box 36 is connected to the HCL synthesis chamber 38 and the catcher II 24 through the Cl2 transfer pipe 34 respectively; a throttle valve 37 is provided between the Cl2 collection box 36 and the HCL synthesis chamber 38;

[0010] The described multiple concentrating photovoltaic-thermoelectric coupling system includes a butterfly concentrator 41, a base 42, a Fresnel mirror I 43, a bracket 44, a stage I 45, a Fresnel mirror II 46, a stage II 47, a solar panel 48, and a storage battery box 49. The bottom of the butterfly concentrator 41 is stably supported by the base 42, and the upper part is sequentially connected to the bracket 21 and the annular slide rail 22; the Fresnel mirror I 43 and the Fresnel mirror II 46 are respectively connected to the stage I 45 and the stage II 47 through the bracket 44; the pure silicon synthesis chamber 56 and the solar panel 48 are respectively carried in the stage I 45 and the stage II 47;

[0011] The described pure silicon extraction system includes a mixed gas pipeline 51, a mixed gas collection chamber 52, a SiCl4 separation chamber I 53, an exhaust gas collection chamber 54, a SiCl4 transmission pipe 55, a pure silicon synthesis chamber 56, and a SiCl4 separation chamber II 57. The input end of the mixed gas pipeline 51 is connected to the trap III 25, and the output end is sequentially connected to the mixed gas collection chamber 52 and the SiCl4 separation chamber I 53 via the pump 14; after the SiCl4 separation chamber I 53, it is connected to the pure silicon synthesis chamber 56 via the SiCl4 transmission pipe 55; the SiCl4 separation chamber II 57 is connected to the pure silicon synthesis chamber 56 through the mixed gas pipeline 51 and the SiCl4 transmission pipe 55; exhaust gas collection chambers 54 are provided after the SiCl4 separation chamber I 53 and the SiCl4 separation chamber II 57;

[0012] The described H2O circulating heat exchange system includes a water tank 61, a water pipe I 62, a water pipe II 63, a water pipe III 64, and a water vapor pipeline 65. The water vapor pipeline 65 connects the SiO2 synthesis chamber 15 and the water tank 61; the water pipe II 63 connects the water tank 61 and the SiCl4 separation chamber I 53 to form a circulating pipeline; the water pipe III 64 connects the water tank 61 and the SiCl4 separation chamber II 57 to form a circulating pipeline; the water pipe I 62 forms a circulating pipeline from the water tank 61 through the bottom of the battery box 49 to the heat-assisted water injection layer 561 of the pure silicon synthesis chamber 56; pumps 14 are provided on the water pipe II 63, the water pipe III 64, and the water vapor pipeline 65.

[0013] Further, the described SiO2 synthesis chamber 15 includes a graphene electric heating layer 151 and a SiO2 synthesis cavity 152. The graphene electric heating layer 151 is provided on the outer wall of the SiO2 synthesis cavity 152.

[0014] Further, the described high-temperature synthesis box 17 for crude silicon includes a graphene electric heating layer 171, a high-temperature synthesis cavity 172, a rotating shaft 173, and a rotating baffle 174. The graphene electric heating layer 171 is provided on the outer wall of the high-temperature synthesis cavity 172, and a rotating shaft 173 is provided at the top to connect the rotating baffle 174 for controlling the entry and exit of substances; a temperature sensor 19 is provided inside the high-temperature synthesis box 17 for crude silicon;

[0015] Further, the described trap I 23 includes a trap housing 231, an infrared sensor 232, and a sealing strip 233. The trap housing 231 is a bottomless box-shaped housing, and four infrared sensors 232 are provided at the four corners inside the housing; the sealing strip 233 is located at the bottom edge of the trap; the structures of the trap I 23, the trap II 24, and the trap III 25 are exactly the same.

[0016] Further, the described HCL synthesis chamber 38 includes an ultraviolet-filtering glass 381 and a telescopic inner cavity 382. The ultraviolet-filtering glass 381 and the telescopic inner cavity 382 are respectively the outer layer and the inner layer of the cavity.

[0017] Further, the SiCl4 separation chamber I 53 includes a cooling water injection chamber 531, a partition 532, a porous spiral tube 533, and a SiCl4 condensation chamber 534. The cooling water injection chamber 531 and the SiCl4 condensation chamber 534 are respectively the upper and lower parts of the chamber, separated by the partition 532; the porous spiral tube 533 penetrates through the SiCl4 separation chamber I 53, and the porous area of the porous spiral tube 533 is located in the SiCl4 condensation chamber 534; through the partition 532, the upper and lower parts of the porous spiral tube 533 are respectively located in the cooling water injection chamber 531 and the SiCl4 condensation chamber 534.

[0018] Further, the pure silicon synthesis chamber 56 includes a heat-assisted water injection layer 561 and a pure silicon synthesis chamber 562. The pure silicon synthesis chamber 56 is a double-layer structure, and from the inside to the outside are the pure silicon synthesis chamber 562 and the heat-assisted water injection layer 561 in sequence.

[0019] A method for using a pure silicon extraction system based on the coupling of a dish-shaped solar concentrator and a high-concentration photovoltaic system is as follows:

[0020] When the entire device starts to work, silicate is added with hydrochloric acid in the silicic acid synthesis chamber 11 to react to form silicic acid precipitate and a chloride solution. There is a filter screen at the bottom of the silicic acid synthesis chamber 11, and the silicic acid precipitate remains in the silicic acid synthesis chamber 11, while the waste liquid passes through the transmission pipeline 13 to the waste liquid tank 12; the pump 14 pumps the silicic acid precipitate in the silicic acid synthesis chamber 11 to the SiO2 synthesis chamber 15 in the SiO2 synthesis cavity 152. The graphene electrothermal layer 151 on the outer wall heats the cavity, and the internal temperature sensor 19 detects the reaction temperature. When the temperature reaches 150 °C, the silicic acid precipitate decomposes into SiO2 and H2O, and H2O becomes gaseous at high temperature and is pumped into the water tank 61 through the water vapor pipeline 65;

[0021] At the same time, when the four infrared sensors 232 in the catcher I 23 sense the alignment of the lower crude silicon high-temperature synthesis box 17 below, the catcher I 23 covers down on the top of the lower crude silicon high-temperature synthesis box 17. After the interface is fully sealed by the sealing strip 233, the rotating baffle 174 is rotated and opened by the rotating shaft 173, so that the high-temperature synthesis cavity 172 communicates with the catcher I 23, and the SiO2 in the SiO2 synthesis chamber 15 then passes through the SiO2 transmission pipe 16 to the crude silicon high-temperature synthesis box 17;

[0022] The carbon storage tower 18 supplies carbon to the high-temperature synthesis box 17 of crude silicon through the conveyor belt 26, and at the same time, multiple concentrating photovoltaic-thermoelectric coupling systems 4 start to operate. The Fresnel mirror II highly concentrates light on the solar panel 48 mounted on the lower stage II 47, and the generated electric energy is stored in the electricity storage box 49; the dish concentrator 41 concentrates light in the area of the annular slide rail 22, and the high-temperature synthesis box 17 of crude silicon on the annular slide rail 22 is heated up by concentrating light. At the same time, the graphene electric heating layer 171 on the wall of the high-temperature synthesis box 17 of crude silicon assists in heating the cavity, and the internal temperature sensor 19 monitors the reaction temperature; when the temperature reaches about 800 °C, SiO2 and C in the high-temperature synthesis box 17 of crude silicon react to generate crude Si and CO. At this time, after the rotating shaft 173 rotates to close the rotary baffle 174 and the high-temperature synthesis box 17 of crude silicon, the catcher I 23 is separated from the high-temperature synthesis box 17 of crude silicon;

[0023] The annular slide rail 22 drives the high-temperature synthesis box 17 of crude silicon to rotate counterclockwise. When the high-temperature synthesis box 17 of crude silicon rotates below the catcher II 24 and the four infrared sensors in the catcher II 24 sense the alignment of the high-temperature synthesis box 17 of crude silicon below, the annular slide rail 22 stops rotating. At the same time, the catcher II 24 covers down on the top of the high-temperature synthesis box 17 of crude silicon below, and the sealing strip fully seals the interface; at this time, the seawater electrolysis system 3 starts to operate;

[0024] In the U-shaped electrolysis chamber 31, the electrolysis of the NaCl solution generates Cl2 at the anode 32 and H2 at the cathode 33; the Cl2 generated at the anode 32 is led to the Cl2 collection box 36 through the Cl2 transmission pipe 34; the H2 generated at the cathode 33 is led to the HCL synthesis chamber 38 and the pure silicon synthesis chamber 56 through the H2 transmission pipe 35; at this time, on the high-temperature synthesis box 17 of crude silicon below the catcher II 24, the rotary baffle 174 is rotated and opened by the rotating shaft 173, and the Cl2 in the Cl2 collection box 36 is led into the high-temperature synthesis box 17 of crude silicon below the catcher II 24 through the Cl2 transmission pipe 34;

[0025] The dish concentrator 41 concentrates light on the area of the annular slide rail 22, and the high-temperature synthesis box 17 of crude silicon on the annular slide rail 22 is heated up, and at the same time, the graphene electric heating layer 171 assists in heating the cavity; the internal temperature sensor 19 monitors the reaction temperature; when the temperature reaches 300 °C, Si reacts with the introduced Cl2 to generate SiCl4; at this time, SiCl4 is in a gaseous state in the 300 °C environment and coexists with Cl2, CO, and Si in the high-temperature synthesis box 17 of crude silicon; at this time, after the rotary baffle 174 is rotated and closed by the rotating shaft 173, the catcher II 24 is separated from the high-temperature synthesis box 17 of crude silicon, and the annular slide rail 22 drives the high-temperature synthesis box 17 of crude silicon to continue rotating counterclockwise;

[0026] When the high-temperature synthesis box 17 of crude silicon rotates to below the catcher Ⅲ 25 and the four infrared sensors in the catcher Ⅲ 25 sense the alignment of the high-temperature synthesis box 17 of crude silicon below, the annular slide rail 22 stops rotating. At the same time, the catcher Ⅲ 25 covers downwards on the top of the high-temperature synthesis box 17 of crude silicon below, and the sealing strip fully seals the interface. At this time, the rotary baffle 174 is rotated and opened by the rotating shaft 173; the pump 14 on the mixed gas pipeline 51 connected to the catcher Ⅲ 25 accelerates the air flow, so that the mixed gas of Cl2, CO, and SiCl4 in the high-temperature synthesis box 17 of crude silicon is introduced into the mixed gas collection chamber 52, and then passes through the mixed gas pipeline 51 to the porous spiral tube 533 in the SiCl4 separation chamber Ⅰ 53. At this time, the H2O circulation heat exchange system starts to operate;

[0027] The water tank 61 is connected to the cooling water injection chamber 531 of the SiCl4 separation chamber Ⅰ 53 through the water pipe Ⅱ 63 to form a circulating cooling pipeline. The normal temperature water fills the cooling water injection chamber 531 of the SiCl4 separation chamber Ⅰ 53 to cool the high-temperature mixed gas in the porous spiral tube 533. Since the boiling point of SiCl4 is 57.6 °C, when the temperature reaches below 57.6 °C, the gaseous SiCl4 in the mixed gas cools and condenses into a liquid state, leaks from the small holes of the porous spiral tube 533 into the SiCl4 condensation chamber 534 of the SiCl4 separation chamber Ⅰ 53, and the remaining gas passes through to the waste gas collection chamber 54 at the back; the liquid SiCl4 in the SiCl4 condensation chamber 534 then passes through the SiCl4 transmission pipe 55 to the pure silicon synthesis chamber 56 of the pure silicon synthesis chamber 562;

[0028] The pure silicon synthesis chamber 56 is located on the stage Ⅰ 45 below the Fresnel mirror Ⅰ 43. The high-power condensation rapidly raises the temperature, and the water pipe Ⅰ 62 passes through the bottom of the storage battery box 49 and coils to absorb heat sufficiently and then leads to the heat assistance water injection layer 561 of the pure silicon synthesis chamber 56 to assist in heating the cavity; in the pure silicon synthesis chamber 56, H2 generated by the cathode 33 in the U-shaped electrolysis chamber 31 reacts with the liquid SiCl4 from the SiCl4 condensation chamber 534 of the SiCl4 separation chamber Ⅰ 53 at 1300 °C to generate pure Si and HCL, and the remaining unreacted SiCl4 becomes gaseous again; at this time, the gas in the pure silicon synthesis chamber 56 is a mixed gas of SiCl4, HCL, and H2. The mixed gas then passes through the pump 14 on the mixed gas pipeline 51 to the porous spiral tube of the SiCl4 separation chamber Ⅱ 57. The water pipe Ⅲ 64 supplies water to the cooling water injection chamber of the SiCl4 separation chamber Ⅱ 57 to form a circulating cooling pipeline. Similarly, the SiCl4 separation chamber Ⅱ 57 condenses the SiCl4 in the mixed gas in the mixed gas pipeline 51, and then passes back to the pure silicon synthesis chamber 56 through the SiCl4 transmission pipe 55 to continue reacting with H2 to generate pure Si, thus completing the double condensation recovery of SiCl4, avoiding the waste of SiCl4, and collecting the remaining gas in the waste gas collection chamber 54 at the back;

[0029] In the HCl synthesis chamber 38, Cl2 from the Cl2 collection tank 36 reacts with another part of H2 under light. Since the ultraviolet-ray filtering glass 381 weakens the ultraviolet rays, and at the same time, the throttle valve 37 controls the flow rate of the Cl2 fluid, allowing it to slowly flow into the HCl synthesis chamber 38. The telescopic inner cavity 382 can expand or contract to ensure relatively stable pressure inside the cavity. The generated HCl can be used for the initial decomposition of silicate in the device. Thus, the fully automated extraction of pure silicon from silicate and the comprehensive application of various light-concentrating couplings are completed.

[0030] The beneficial effects of the present invention are as follows: It can automatically and intelligently identify and control the operation of the device; by coupling dish-shaped solar light concentration and a high-concentration photovoltaic system, it fully utilizes the photothermal and photovoltaic effects to provide different temperatures required by the device; it performs double-cycle condensation on SiCl4, effectively reducing resource loss; and combines the electrolysis of seawater to generate the required H2 and Cl2. At the same time, the synthesized HCl can be used for the decomposition of initial silicate, thereby extracting pure silicon from silicate such as cement waste in a green, efficient, and pollution-free manner, which is beneficial to the development of the semiconductor industry. Description of the Drawings

[0031] Figure 1 It is the system structure diagram of the present invention.

[0032] Figure 2 It is the structure diagram of the SiO2 synthesis chamber.

[0033] Figure 3 It is the structure diagram of the high-temperature synthesis chamber for crude silicon and the catcher.

[0034] Figure 4 It is the structure diagram of the HCl synthesis chamber.

[0035] Figure 5 It is the combined structure diagram of the Fresnel mirror and the pure silicon synthesis chamber.

[0036] Figure 6 It is the combined structure diagram of the Fresnel mirror and the solar panel.

[0037] Figure 7 It is the structure diagram of the SiCl4 separation chamber.

[0038] Figure 8 It is the structure diagram of the pure silicon synthesis chamber.

[0039] Figure 9 It is the structure diagram of the fully automated capture and transfer system.

[0040] The descriptions of the reference numerals in the figures are as follows: 11 - silicic acid synthesis chamber; 12 - waste liquid tank; 13 - transfer pipeline; 14 - pump; 15 - SiO2 synthesis chamber; 151 - graphene electric heating layer; 152 - SiO2 synthesis cavity; 16 - SiO2 transfer pipe; 17 - crude silicon high-temperature synthesis box; 171 - graphene electric heating layer; 172 - high-temperature synthesis cavity; 173 - rotating shaft; 174 - rotating baffle; 18 - carbon storage tower; 19 - temperature sensor; 21 - support; 22 - annular slide rail; 23 - trap Ⅰ; 231 - trap housing; 232 - infrared sensor; 233 - sealing strip; 24 - trap Ⅱ; 25 - trap Ⅲ; 26 - conveyor belt; 31 - U-shaped electrolysis chamber; 32 - anode; 33 - cathode; 34 - Cl2 transfer pipe; 35 - H2 transfer pipe; 36 - Cl2 collection box; 37 - throttle valve; 38 - HCL synthesis chamber; 381 - ultraviolet filter glass; 382 - telescopic inner cavity; 41 - butterfly concentrator; 42 - base; 43 - Fresnel mirror Ⅰ; 44 - support; 45 - stage Ⅰ; 46 - Fresnel mirror Ⅱ; 47 - stage Ⅱ; 48 - solar panel; 49 - electricity storage box; 51 - mixed gas pipeline; 52 - mixed gas collection chamber; 53 - SiCl4 separation chamber Ⅰ; 531 - cooling water injection chamber; 532 - partition; 533 - porous spiral pipe; 534 - SiCl4 condensation chamber; 54 - waste gas collection chamber; 55 - SiCl4 transfer pipe; 56 - pure silicon synthesis chamber; 561 - heat assisting water injection layer; 562 - pure silicon synthesis cavity; 57 - SiCl4 separation chamber Ⅱ; 61 - water tank; 62 - water pipe Ⅰ; 63 - water pipe Ⅱ; 64 - water pipe Ⅲ; 65 - water vapor pipeline. Detailed implementation manners

[0041] The present invention will be further described in detail with reference to the accompanying drawings. The following drawings are all simplified schematic diagrams, only illustrating the basic structure of the present invention in a schematic manner, so they only show the components related to the present invention.

[0042] As shown in the figure, the present invention provides a fully automatic controlled pure silicon extraction device based on the coupling of a dish-shaped solar concentrator and a high-concentration photovoltaic system, mainly composed of an SiCl4 synthesis system, a fully automatic capture and transfer system, a seawater electrolysis system, a variety of concentrating photovoltaic thermoelectric coupling systems, an H2O circulation heat exchange system, and a pure silicon extraction system. A part of the variety of concentrating photovoltaic thermoelectric coupling systems is mounted on the SiCl4 synthesis system at the beginning of the device, and the other part passes through the entire device through the connected H2O circulation heat exchange system; the SiCl4 synthesis system, the fully automatic capture and transfer system, the pure silicon extraction system, and the seawater electrolysis system are connected in series in turn to form a closed pipeline structure.

[0043] The described SiCl4 synthesis system consists of a silicic acid synthesis chamber 11, a waste liquid tank 12, a transfer pipeline 13, a pump 14, a SiO2 synthesis chamber 15, a SiO2 transfer pipe 16, a high-temperature synthesis chamber for crude silicon 17, a carbon storage tower 18, and a temperature sensor 19. The waste liquid tank 12, the silicic acid synthesis chamber 11, and the SiO2 synthesis chamber 15 are connected in series in sequence through the transfer pipeline 13; one end of the output end of the SiO2 synthesis chamber 15 is connected to the water tank 61 through the steam pipeline 55, and the other end is connected to the high-temperature synthesis chamber for crude silicon 17 through the SiO2 transfer pipe 16 and the catcher I 23; the carbon storage tower 18 is connected to the high-temperature synthesis chamber for crude silicon 17 through the conveyor belt 26; the high-temperature synthesis chamber for crude silicon 17 is internally provided with a temperature sensor 19;

[0044] The described SiO2 synthesis chamber 15 consists of a graphene electrothermal layer 151 and a SiO2 synthesis cavity 152. The graphene electrothermal layer 151 is provided on the outer wall of the SiO2 synthesis cavity 152;

[0045] The described high-temperature synthesis chamber for crude silicon 17 consists of a graphene electrothermal layer 171, a high-temperature synthesis cavity 172, a rotating shaft 173, and a rotating baffle 174. The graphene electrothermal layer 171 is provided on the outer wall of the high-temperature synthesis cavity 172, and a rotating shaft 173 is provided at the top to connect the rotating baffle 174 to control the entry and exit of substances; a temperature sensor 19 is provided inside the high-temperature synthesis chamber for crude silicon 17;

[0046] The described fully automatic capture and transfer system consists of a support 21, an annular slide rail 22, a catcher I 23, a catcher II 24, a catcher III 25, and a conveyor belt 26. The support 21 is located between the annular slide rail 22 and the butterfly concentrator 41 to support the stability of the device; the high-temperature synthesis chamber for crude silicon 17 is carried on the annular slide rail 22; the catcher I 23, the catcher II 24, and the catcher III 25 can capture and connect to the high-temperature synthesis chamber for crude silicon 17; the conveyor belt 26 connects the carbon storage tower 18 and the high-temperature synthesis chamber for crude silicon 17;

[0047] The described catcher I 23 consists of a catcher housing 231, an infrared sensor 232, and a sealing strip 233. The catcher housing 231 is a bottomless box-shaped housing, and four temperature sensors 19 are provided at the four corners inside the housing; the sealing strip 233 is located at the bottom edge of the catcher; the catcher I 23, the catcher II 24, and the catcher III 25 have exactly the same structure;

[0048] The described seawater electrolysis system consists of a U-shaped electrolysis chamber 31, an anode 32, a cathode 33, a Cl2 transfer pipe 34, an H2 transfer pipe 35, a Cl2 collection tank 36, a throttle valve 37, and an HCL synthesis chamber 38. The U-shaped electrolysis chamber 31 is connected to a storage battery box 49 via a transmission line. The anode 32 of the U-shaped electrolysis chamber 31 is connected to the Cl2 collection tank 36 via the Cl2 transfer pipe 34, and the cathode 33 is connected to the HCL synthesis chamber 38 and the pure silicon synthesis chamber 56 in the pure silicon extraction system via the H2 transfer pipe 35 respectively. The output end of the Cl2 collection tank 36 is connected to the HCL synthesis chamber 38 and the trap II 24 via the Cl2 transfer pipe 34 respectively. A throttle valve 37 is provided between the Cl2 collection tank 36 and the HCL synthesis chamber 38.

[0049] The described HCL synthesis chamber 38 consists of an ultraviolet-filtering glass 381 and a telescopic inner cavity 382. The ultraviolet-filtering glass 381 and the telescopic inner cavity 382 are respectively the outer layer and the inner layer of the cavity.

[0050] The described multiple concentrating photovoltaic-thermoelectric coupling system consists of a dish concentrator 41, a base 42, a Fresnel lens I 43, a bracket 44, a stage I 45, a Fresnel lens II 46, a stage II 47, a solar panel 48, and a storage battery box 49. The bottom of the dish concentrator 41 is stably supported by the base 42, and the upper part is sequentially connected to the bracket 21 and the annular slide rail 22. The Fresnel lens I 43 and the Fresnel lens II 46 are respectively connected to the stage I 45 and the stage II 47 via the bracket 44. The pure silicon synthesis chamber 56 and the solar panel 48 are respectively mounted on the stage I 45 and the stage II 47.

[0051] The described pure silicon extraction system consists of a mixed gas pipeline 51, a mixed gas collection chamber 52, a SiCl4 separation chamber I 53, an exhaust gas collection chamber 54, a SiCl4 transfer pipe 55, a pure silicon synthesis chamber 56, and a SiCl4 separation chamber II 57. The input end of the mixed gas pipeline 51 is connected to the trap III 25, and the output end is sequentially connected to the mixed gas collection chamber 52 and the SiCl4 separation chamber I 53 via a pump 14. After the SiCl4 separation chamber I 53, it is connected to the pure silicon synthesis chamber 56 via the SiCl4 transfer pipe 55. The SiCl4 separation chamber II 57 is connected to the pure silicon synthesis chamber 56 via the mixed gas pipeline 51 and the SiCl4 transfer pipe 55. Exhaust gas collection chambers 54 are provided after the SiCl4 separation chamber I 53 and the SiCl4 separation chamber II 57.

[0052] The described SiCl4 separation chamber I 53 is composed of a cooling water injection chamber 531, a partition 532, a porous spiral tube 533, and a SiCl4 condensation chamber 534. The cooling water injection chamber 531 and the SiCl4 condensation chamber 534 are respectively the upper and lower parts of the chamber, separated by the partition 532; the porous spiral tube 533 penetrates through the SiCl4 separation chamber I 53, and the porous area of the porous spiral tube 533 is located in the SiCl4 condensation chamber 534; the porous spiral tube 533 connects the cooling water injection chamber 531 and the SiCl4 condensation chamber 534 through the partition 532;

[0053] The described pure silicon synthesis chamber 56 is composed of a heat - assisting water injection layer 561 and a pure silicon synthesis chamber 562. The pure silicon synthesis chamber 56 is a double - layer structure, and from the inside to the outside, it is successively the pure silicon synthesis chamber 562 and the heat - assisting water injection layer 561;

[0054] The described H2O circulation heat - exchange system is composed of a water tank 61, a water pipe I 62, a water pipe II 63, a water pipe III 64, and a water vapor pipeline 65. The water vapor pipeline 65 connects the SiO2 synthesis chamber 15 and the water tank 61; the water pipe II 63 connects the water tank 61 and the SiCl4 separation chamber I 53 to form a circulation pipeline; the water pipe III 64 connects the water tank 61 and the SiCl4 separation chamber II 57 to form a circulation pipeline; the water pipe I 62 forms a circulation pipeline from the water tank 61 through the bottom of the electricity storage box 49 to the heat - assisting water injection layer 561 of the pure silicon synthesis chamber 56; pumps 14 are provided on the water pipe II 63, the water pipe III 64, and the water vapor pipeline 65;

[0055] When the entire device starts to work, silicates such as sodium silicate and calcium silicate are added with hydrochloric acid in the silicic acid synthesis chamber 11 to react to form silicic acid precipitate and solutions such as sodium chloride and calcium chloride. There is a filter screen at the bottom of the silicic acid synthesis chamber 11, and the silicic acid precipitate remains in the silicic acid synthesis chamber 11, while the waste liquid passes through the transmission pipeline 13 to the waste liquid tank 12; the pump 14 passes the silicic acid precipitate in the silicic acid synthesis chamber 11 to the SiO2 synthesis chamber 15 in the SiO2 synthesis chamber 152. The graphene electro - thermal layer 151 on the outer wall heats the chamber, and the internal temperature sensor 19 detects the reaction temperature. When the temperature reaches 150 °C, the silicic acid precipitate decomposes into SiO2 and H2O, and the H2O becomes gaseous at high temperature and enters the water tank 61 through the water vapor pipeline 65 and is pumped;

[0056] At the same time, when the four infrared sensors 232 in the catcher I 23 sense that the lower coarse silicon high - temperature synthesis box 17 is aligned, the catcher I 23 covers down on the top of the lower coarse silicon high - temperature synthesis box 17. After the interface is fully sealed by the sealing rubber strip 233, the rotary baffle 174 is rotated and opened by the rotating shaft 173, so that the high - temperature synthesis chamber 172 communicates with the catcher I 23, and the SiO2 in the SiO2 synthesis chamber 15 then passes through the SiO2 transmission pipe 16 to the coarse silicon high - temperature synthesis box 17;

[0057] The carbon storage tower 18 supplies carbon to the high-temperature synthesis chamber 17 of crude silicon through the conveyor belt 26, and at the same time, multiple concentrating photovoltaic-thermoelectric coupling systems start to operate. The Fresnel mirror II highly concentrates light on the solar panel 48 mounted on the lower stage II 47, and the generated electric energy is stored in the electricity storage box 49; the dish concentrator 41 concentrates light in the area of the annular slide rail 22, and the high-temperature synthesis chamber 17 of crude silicon on the annular slide rail 22 is heated up by concentrating light. At the same time, the graphene electrothermal layer 171 on the wall of the high-temperature synthesis chamber 17 of crude silicon assists in heating the cavity, and the internal temperature sensor 19 monitors the reaction temperature; when the temperature reaches about 800 °C, SiO2 and C in the high-temperature synthesis chamber 17 of crude silicon react to generate crude Si and CO. At this time, after the rotating shaft 173 rotates to close the rotating baffle 174 of the high-temperature synthesis chamber 17 of crude silicon, the catcher I 23 is separated from the high-temperature synthesis chamber 17 of crude silicon;

[0058] The annular slide rail 22 drives the high-temperature synthesis chamber 17 of crude silicon to rotate counterclockwise. When the high-temperature synthesis chamber 17 of crude silicon rotates below the catcher II 24 and the four infrared sensors in the catcher II 24 sense the alignment of the high-temperature synthesis chamber 17 of crude silicon below, the annular slide rail 22 stops rotating. At the same time, the catcher II 24 covers down on the top of the high-temperature synthesis chamber 17 of crude silicon below, and the sealing strip fully seals the interface; at this time, the seawater electrolysis system starts to operate;

[0059] In the U-shaped electrolysis chamber 31, the NaCl solution is electrolyzed to generate Cl2 at the anode 32 and H2 at the cathode 33; the Cl2 generated at the anode 32 is led to the Cl2 collection box 36 through the Cl2 transmission pipe 34; the H2 generated at the cathode 33 is led to the HCL synthesis chamber 38 and the pure silicon synthesis chamber 56 through the H2 transmission pipe 35; at this time, on the high-temperature synthesis chamber 17 of crude silicon below the catcher II 24, the rotating baffle 174 is rotated and opened by the rotating shaft 173, and the Cl2 in the Cl2 collection box 36 is led to the inside of the high-temperature synthesis chamber 17 of crude silicon below the catcher II 24 through the Cl2 transmission pipe 34;

[0060] The dish concentrator 41 concentrates light on the area of the annular slide rail 22, and the high-temperature synthesis chamber 17 of crude silicon on the annular slide rail 22 is heated up by heat. At the same time, the graphene electrothermal layer 171 assists in heating the cavity; the internal temperature sensor 19 monitors the reaction temperature; when the temperature reaches 300 °C, Si reacts with the introduced Cl2 to generate SiCl4; at this time, SiCl4 is in a gaseous state in the 300 °C environment and coexists with Cl2, CO, and Si in the high-temperature synthesis chamber 17 of crude silicon; at this time, after the rotating baffle 174 is rotated and closed by the rotating shaft 173, the catcher II 24 is separated from the high-temperature synthesis chamber 17 of crude silicon, and the annular slide rail 22 drives the high-temperature synthesis chamber 17 of crude silicon to continue rotating counterclockwise;

[0061] When the high-temperature synthesis box 17 of crude silicon rotates to below the catcher III 25 and the four infrared sensors in the catcher III 25 sense the alignment of the high-temperature synthesis box 17 of crude silicon below, the annular slide rail 22 stops rotating. At the same time, the catcher III 25 covers downwards on the top of the high-temperature synthesis box 17 of crude silicon below, and the sealing rubber strip seals the interface fully. At this time, the rotary baffle 174 is rotated and opened by the rotating shaft 173; the pump 14 on the mixed gas pipeline 51 connected to the catcher III 25 accelerates the air flow, so that the mixed gas of Cl2, CO, and SiCl4 in the high-temperature synthesis box 17 of crude silicon is introduced into the mixed gas collection chamber 52, and then passes through the mixed gas pipeline 51 to the porous spiral tube 533 in the SiCl4 separation chamber I 53. At this time, the H2O circulation heat exchange system starts to operate;

[0062] The water pipe II 63 is connected to the cooling water injection chamber 531 of the SiCl4 separation chamber I 53 through the water tank 61 to form a circulating cooling pipeline. The normal temperature water fills the cooling water injection chamber 531 of the SiCl4 separation chamber I 53 to cool the high-temperature mixed gas in the porous spiral tube 533. Since the boiling point of SiCl4 is 57.6 °C, when the temperature reaches below 57.6 °C, the gaseous SiCl4 in the mixed gas cools and condenses into a liquid state, leaks from the small holes of the porous spiral tube 533 into the SiCl4 condensation chamber 534 in the SiCl4 separation chamber I 53, and the remaining gas then passes into the waste gas collection chamber 54 at the back; the liquid SiCl4 in the SiCl4 condensation chamber 534 then passes through the SiCl4 transmission pipe 55 to the pure silicon synthesis chamber 56 of the pure silicon synthesis cavity 562;

[0063] The pure silicon synthesis chamber 56 is located on the stage I 45 below the Fresnel mirror I 43. The high-power condensation rapidly raises the temperature, and the water pipe I 62 is coiled at the bottom of the storage battery box 49 to absorb heat sufficiently and then leads to the heat assistance water injection layer 561 of the pure silicon synthesis chamber 56 to assist in heating the cavity; in the pure silicon synthesis chamber 56, H2 generated by the cathode 33 in the U-shaped electrolytic chamber 31 reacts with the liquid SiCl4 from the SiCl4 condensation chamber 534 in the SiCl4 separation chamber I 53 at 1300 °C to generate pure Si and HCL, and the remaining unreacted SiCl4 becomes gaseous again; at this time, the gas in the pure silicon synthesis chamber 56 is a mixed gas of SiCl4, HCL, and H2. The mixed gas then passes through the pump 14 on the mixed gas pipeline 51 to the porous spiral tube in the SiCl4 separation chamber II 57. The water pipe III 64 supplies water to the cooling water injection chamber of the SiCl4 separation chamber II 57 to form a circulating cooling pipeline. Similarly, the SiCl4 separation chamber II 57 condenses the SiCl4 in the mixed gas in the mixed gas pipeline 51, and then passes back to the pure silicon synthesis chamber 56 through the SiCl4 transmission pipe 55 to continue reacting with H2 to generate pure Si, thus completing the double condensation recovery of SiCl4, avoiding the waste of SiCl4, and collecting the remaining gas in the waste gas collection chamber 54 at the back;

[0064] In the HCl synthesis chamber 38, Cl2 from the Cl2 collection tank 36 reacts with another part of H2 under light. Since the ultraviolet-ray filtering glass 381 weakens the ultraviolet rays, and at the same time the throttle valve 37 controls the Cl2 fluid rate to slowly introduce it into the HCl synthesis chamber 38; the telescopic inner cavity 382 can expand or contract to ensure relatively stable pressure in the cavity. The generated HCl can be used for the initial silicate decomposition of the device; thus, the complete automation of extracting pure silicon from silicate and the comprehensive application of various light-concentrating couplings are completed.

Claims

1. A pure silicon extraction system based on the coupling of a dish-shaped solar concentrator and a high-concentration photovoltaic system, characterized in that, The pure silicon extraction device includes SiCl 4 synthesis system, fully automatic capture and transfer system, seawater electrolysis system, multiple concentrating photovoltaic-thermoelectric coupling systems, H 2 O circulation heat exchange system, and pure silicon extraction system; The described SiCl 4 The synthesis system includes a silicic acid synthesis chamber (11), a waste liquid tank (12), a transfer pipeline (13), a pump (14), SiO 2 synthesis chamber (15), SiO 2 transfer pipe (16), a high-temperature synthesis box for crude silicon (17), a carbon storage tower (18) and a temperature sensor (19); the waste liquid tank (12), the silicic acid synthesis chamber (11), SiO 2 synthesis chamber (15) are connected in series in sequence through the transfer pipeline (13); SiO 2 One end of the output end of the synthesis chamber (15) leads to the water tank (61) through the steam pipeline (65), and the other end leads to the high-temperature synthesis box for crude silicon (17) through the SiO 2 transfer pipe (16) and the trap Ⅰ (23); the carbon storage tower (18) is connected to the high-temperature synthesis box for crude silicon (17) through the conveyor belt (26); inside the high-temperature synthesis box for crude silicon (17), SiO 2 temperature sensors (19) are arranged on the synthesis chamber (15); between the silicic acid synthesis chamber (11) and the SiO 2 pump (14) is arranged on the transfer pipeline (13) between the synthesis chambers (15), and on the steam pipeline (65) between the synthesis chamber (15) and the water tank (61); 2 ​ the fully automatic capture and transfer system includes a bracket (21), an annular slide rail (22), a capturer I (23), a capturer II (24), a capturer III (25) and a conveyor belt (26); the bracket (21) is located between the annular slide rail (22) and the dish-shaped concentrator (41) for supporting the device stably; the annular slide rail (22) carries a high-temperature synthesis box for crude silicon (17); the capturer I (23), the capturer II (24), and the capturer III (25) can capture and connect to the high-temperature synthesis box for crude silicon (17); the conveyor belt (26) connects the carbon storage tower (18) and the high-temperature synthesis box for crude silicon (17); The described seawater electrolysis system includes a U-shaped electrolysis chamber (31), an anode (32), a cathode (33), a Cl 2 transfer pipe (34), an H 2 transfer pipe (35), a Cl 2 collection tank (36), a throttle valve (37), and an HCl synthesis chamber (38); the anode and cathode of the U-shaped electrolysis chamber (31) are connected to a storage battery box (49) via transmission lines, and the anode (32) of the U-shaped electrolysis chamber (31) is connected to the Cl 2 transfer pipe (34) and connected to the Cl 2 collection tank (36), and the cathode (33) is connected to the HCl synthesis chamber (38) and the pure silicon synthesis chamber (56) in the pure silicon extraction system via the H 2 transfer pipe (35); the output end of the Cl 2 collection tank (36) is connected to the HCl synthesis chamber (38) and the trap II (24) via the Cl 2 transfer pipe (34); a throttle valve (37) is provided between the Cl 2 collection tank (36) and the HCl synthesis chamber (38); the multiple concentrating photovoltaic and thermoelectric coupling systems include a dish-shaped concentrator (41), a base (42), a Fresnel mirror I (43), a bracket (44), a stage I (45), a Fresnel mirror II (46), a stage II (47), a solar panel (48) and a power storage box (49); the bottom of the dish-shaped concentrator (41) is supported stably by the base (42), and the upper part is sequentially connected to the bracket (21) and the annular slide rail (22); the Fresnel mirror I (43) and the Fresnel mirror II (46) are respectively connected to the stage I (45) and the stage II (47) through the bracket (44); the pure silicon synthesis chamber (56) and the solar panel (48) are respectively carried on the stage I (45) and the stage II (47); The described pure silicon extraction system includes a mixed gas pipeline (51), a mixed gas collection chamber (52), SiCl 4 separation chamber I (53), an exhaust gas collection chamber (54), SiCl 4 transfer pipe (55), a pure silicon synthesis chamber (56), and SiCl 4 separation chamber II (57); the input end of the mixed gas pipeline (51) is connected to the catcher III (25), and the output end is sequentially connected to the mixed gas collection chamber (52) and SiCl 4 separation chamber I (53) via a pump (14); after the SiCl 4 separation chamber I (53), it is connected to the pure silicon synthesis chamber (56) via a SiCl 4 transfer pipe (55); the SiCl 4 separation chamber II (57) is connected to the pure silicon synthesis chamber (56) through the mixed gas pipeline (51) and the SiCl 4 transfer pipe (55); exhaust gas collection chambers (54) are provided after the SiCl 4 separation chamber I (53) and the SiCl 4 separation chamber II (57); The described H 2 O circulation heat exchange system includes a water tank (61), a water pipe I (62), a water pipe II (63), a water pipe III (64) and a water vapor pipeline (65); the water vapor pipeline (65) connects the SiO 2 synthesis chamber (15) to the water tank (61); the water pipe II (63) connects the water tank (61) and the SiCl 4 separation chamber I (53) to form a circulation pipeline; the water pipe III (64) connects the water tank (61) and the SiCl 4 separation chamber II (57) to form a circulation pipeline; the water pipe I (62) forms a circulation pipeline by connecting the water tank (61) to the heat - assisting water injection layer (561) of the pure silicon synthesis chamber (56) through the bottom of the electricity storage box (49); pumps (14) are provided on the water pipe II (63), the water pipe III (64) and the water vapor pipeline (65).

2. The pure silicon extraction system based on the coupling of a dish-shaped solar concentrator and a high-concentration photovoltaic system according to claim 1, characterized in that, The SiO 2 The synthesis chamber (15) includes a graphene electrothermal layer (151) and SiO 2 a synthesis cavity (152); SiO 2 A graphene electrothermal layer (151) is provided on the outer wall of the synthesis cavity (152).

3. The pure silicon extraction system based on the coupling of a dish-shaped solar concentrator and a high-concentration photovoltaic system according to claim 1, characterized in that, the high-temperature synthesis box for crude silicon (17) includes a graphene electrothermal layer (171), a high-temperature synthesis cavity (172), a rotating shaft (173), and a rotating baffle (174); the outer wall of the high-temperature synthesis cavity (172) is provided with a graphene electrothermal layer (171), and the top has a rotating shaft (173) connected to the rotating baffle (174) for controlling the entry and exit of substances; a temperature sensor (19) is provided in the high-temperature synthesis box for crude silicon (17).

4. The pure silicon extraction system based on the coupling of a dish-shaped solar concentrator and a high-concentration photovoltaic system according to claim 1, characterized in that, the capturer I (23) includes a capturer housing (231), an infrared sensor (232), and a sealing strip (233); the capturer housing (231) is a bottomless box-shaped housing, and four infrared sensors (232) are provided at the four corners inside the housing; the sealing strip (233) is located at the bottom edge of the capturer; the structures of the capturer I (23), the capturer II (24), and the capturer III (25) are completely the same.

5. The pure silicon extraction system based on the coupling of a dish-shaped solar concentrator and a high-concentration photovoltaic system according to claim 1, characterized in that, The described HCl synthesis chamber (38) includes an ultraviolet-filtering glass (381) and a telescopic inner cavity (382); the ultraviolet-filtering glass (381) and the telescopic inner cavity (382) are respectively the outer layer and the inner layer of the cavity.

6. A pure silicon extraction system based on the coupling of a dish-shaped solar concentrator and a high-concentration photovoltaic system according to claim 1, characterized in that The described SiCl 4 Separation chamber I (53) includes a cooling water injection chamber (531), a partition (532), a porous spiral tube (533), and SiCl 4 condensation chamber (534); the cooling water injection chamber (531) and the SiCl 4 condensation chamber (534) are respectively the upper and lower parts of the chamber, separated by a partition (532); the porous spiral tube (533) penetrates through the SiCl 4 separation chamber I (53), and the porous region of the porous spiral tube (533) is located in the SiCl 4 condensation chamber (534); through the partition (532), the upper and lower parts of the porous spiral tube (533) are respectively located in the cooling water injection chamber (531) and the SiCl 4 condensation chamber (534).

7. A pure silicon extraction system based on the coupling of a dish-shaped solar concentrator and a high-concentration photovoltaic system according to claim 1, characterized in that The described pure silicon synthesis chamber (56) includes a heat-assisted water injection layer (561) and a pure silicon synthesis cavity (562); the pure silicon synthesis chamber (56) is a double-layer structure, and from the inside to the outside are the pure silicon synthesis cavity (562) and the heat-assisted water injection layer (561) in sequence.

8. A method for using a pure silicon extraction system based on the coupling of a dish-shaped solar concentrator and a high-concentration photovoltaic system according to any one of claims 1-7, characterized in that: When the whole device starts to work, silicate is added with hydrochloric acid in the silicic acid synthesis chamber (11) to generate silicic acid precipitate and chloride solution. There is a filter screen at the bottom of the silicic acid synthesis chamber (11), and the silicic acid precipitate remains in the silicic acid synthesis chamber (11), while the waste liquid is led to the waste liquid tank (12) through the transfer pipeline (13); the pump (14) leads the silicic acid precipitate in the silicic acid synthesis chamber (11) to the SiO 2 synthesis chamber (15). In the SiO 2 synthesis cavity (152) of the synthesis chamber (15), the graphene electrothermal layer (151) on the outer wall heats the cavity, and the internal temperature sensor (19) detects the reaction temperature. When the temperature reaches 150 °C, the silicic acid precipitate decomposes into SiO 2 and H 2 O. H 2 O becomes gaseous at high temperature and is pumped into the water tank (61) through the water vapor pipeline (65); When the four infrared sensors (232) inside the catcher I (23) sense the alignment of the lower high-temperature synthesis chamber of crude silicon (17) below, the catcher I (23) covers downwards on the top of the lower high-temperature synthesis chamber of crude silicon (17). After the interface is fully sealed by the sealing strip (233), the rotary baffle (174) is rotated and opened by the rotating shaft (173), so that the high-temperature synthesis cavity (172) communicates with the catcher I (23), and SiO 2 In the SiO synthesis chamber (15), 2 Then, SiO 2 passes through the transfer pipe (16) to the high-temperature synthesis chamber of crude silicon (17); The carbon storage tower (18) supplies carbon to the high-temperature synthesis chamber for metallurgical grade silicon (17) through the conveyor belt (26), and at the same time, multiple concentrating photovoltaic-thermoelectric coupling systems (4) start to operate; the Fresnel mirror II highly concentrates light on the solar panel (48) mounted on the lower stage II (47), and the generated electric energy is stored in the electricity storage box (49); the dish concentrator (41) concentrates light in the area of the annular slide rail (22), and the high-temperature synthesis chamber for metallurgical grade silicon (17) on the annular slide rail (22) is heated up by concentrating light. At the same time, the graphene electrothermal layer (171) on the wall of the high-temperature synthesis chamber for metallurgical grade silicon (17) assists in heating the cavity, and the internal temperature sensor (19) monitors the reaction temperature; when the temperature reaches 800 °C, SiO 2 in the high-temperature synthesis chamber for metallurgical grade silicon (17) reacts with C to generate metallurgical grade silicon and CO. At this time, after the rotating shaft (173) rotates to close the rotary baffle (174) to close the high-temperature synthesis chamber for metallurgical grade silicon (17), the catcher I (23) is separated from the high-temperature synthesis chamber for metallurgical grade silicon (17). The annular slide rail (22) drives the high-temperature synthesis box for crude silicon (17) to rotate counterclockwise. When the high-temperature synthesis box for crude silicon (17) rotates below the catcher II (24) and at the same time the four infrared sensors in the catcher II (24) sense the alignment of the high-temperature synthesis box for crude silicon (17) below, the annular slide rail (22) stops rotating, and at the same time the catcher II (24) covers down on the top of the high-temperature synthesis box for crude silicon (17) below, and the sealing strip fully seals the interface; at this time, the seawater electrolysis system starts to operate; In the U-shaped electrolysis chamber (31), the electrolysis of the NaCl solution generates Cl at the anode (32). 2 and generates H at the cathode (33). 2 ; The Cl generated at the anode (32). 2 passes through the Cl 2 transfer pipe (34) and reaches the Cl 2 collection box (36); The H generated at the cathode (33). 2 then passes through the H 2 transfer pipe (35) and reaches the HCl synthesis chamber (38) and the pure silicon synthesis chamber (56); At this time, on the high-temperature synthesis box (17) of the crude silicon under the trap II (24), the rotating baffle (174) is rotated and opened by the rotating shaft (173), and the Cl 2 in the Cl collection box (36). 2 passes through the Cl 2 transfer pipe (34) and reaches the inside of the high-temperature synthesis box (17) of the crude silicon under the trap II (24). The butterfly concentrator (41) concentrates light to the area of the annular slide rail (22), and the high-temperature synthesis box for crude silicon (17) on the annular slide rail (22) is heated up. At the same time, the graphene electric heating layer (171) heats the cavity; the internal temperature sensor (19) monitors the reaction temperature; when the temperature reaches 300 °C, Si reacts with the introduced Cl 2 to generate SiCl 4 ; at this time, SiCl 4 is in a gaseous state in the 300 °C environment and coexists with Cl 2 , CO, and Si in the high-temperature synthesis box for crude silicon (17); at this time, after the rotating baffle (174) is rotated and closed by the rotating shaft (173), the catcher II (24) is separated from the high-temperature synthesis box for crude silicon (17), and the annular slide rail (22) carries the high-temperature synthesis box for crude silicon (17) and continues to rotate counterclockwise; When the high-temperature synthesis box for crude silicon (17) rotates below the catcher III (25) and the four infrared sensors in the catcher III (25) sense the alignment of the high-temperature synthesis box for crude silicon (17) below, the annular slide rail (22) stops rotating. At the same time, the catcher III (25) covers downwards on the top of the high-temperature synthesis box for crude silicon (17) below, and the sealing strip fully seals the interface. At this time, the rotary baffle (174) is rotated and opened by the rotating shaft (173); the pump (14) on the mixed gas pipeline (51) connected to the catcher III (25) accelerates the gas flow, so that the Cl 2 , CO, and SiCl 4 mixed gas is introduced into the mixed gas collection chamber (52), and then passes through the mixed gas pipeline (51) to the porous spiral tube (533) of the SiCl 4 separation chamber I (53). At this time, the H 2 O circulation heat exchange system starts to operate; The water tank (61) is connected to SiCl through water pipe II (63). 4 The cooling water injection cavity (531) of the separation chamber I (53) forms a circulating cooling pipeline, and the normal temperature water fills SiCl 4 The cooling water injection cavity (531) of the separation chamber I (53) cools down the high-temperature mixed gas in the porous spiral pipe (533). Since SiCl 4 has a boiling point of 57.6 °C, when the temperature reaches below 57.6 °C, the gaseous SiCl in the mixed gas 4 is cooled and condensed into a liquid state, and leaks from the small holes of the porous spiral pipe (533) to SiCl 4 in the separation chamber I (53). 4 In the condensation chamber (534), the remaining gas is then led to the rear waste gas collection chamber (54); SiCl 4 The liquid SiCl in the condensation chamber (534) 4 then passes through SiCl 4 transmission pipe (55) and leads to the pure silicon synthesis cavity (562) of the pure silicon synthesis chamber (56). The pure silicon synthesis chamber (56) is located on the stage I (45) below the Fresnel mirror I (43), and the high-magnification concentration rapidly raises the temperature, and the water pipe I (62) is coiled at the bottom of the electricity storage box (49) to absorb heat sufficiently and then leads to the heat-assisted water injection layer (561) of the pure silicon synthesis chamber (56) to assist in heating the cavity; In the pure silicon synthesis chamber (56), H generated by the cathode (33) in the U-shaped electrolysis chamber (31) 2 With SiCl 4 Separation chamber I (53) SiCl 4 Liquid SiCl in the condensation chamber (534) 4 At 1300℃, the reaction generates pure Si and HCl, and the remaining unreacted SiCl 4 It turns into gaseous state again; at this time, the gas in the pure silicon synthesis chamber (56) is SiCl 4 , HCl and H 2 The mixed gas is then pumped (14) through the mixed gas pipeline (51) to the SiCl 4 The porous spiral tube of the separation chamber II (57) and the water pipe III (64) are SiCl 4 The cooling water injection chamber of separation chamber II (57) supplies water to form a circulating cooling pipeline. Similarly, SiCl 4 The separation chamber II (57) separates SiCl from the mixed gas in the mixed gas pipeline (51). 4 Condensation, then through SiCl 4 The transfer tube (55) leads back to the pure silicon synthesis chamber (56) to continue with H 2 The reaction generates pure Si, thus completing SiCl 4 Double condensation recovery to avoid SiCl 4 Waste, the remaining gas is collected in the rear exhaust gas collection chamber (54); In the HCl synthesis chamber (38), Cl from the 2 Cl in the collection box (36) 2 reacts with another part of H 2 under light. Due to the ultraviolet-ray filtering glass (381) weakening the ultraviolet rays, and at the same time the throttle valve (37) controlling the 2 fluid rate to slowly introduce it into the HCl synthesis chamber (38); the expandable inner cavity (382) can expand or contract to ensure stable pressure in the cavity, and the generated HCl is used for the initial silicate decomposition of the device; thus, the fully automated extraction of pure silicon from silicate and the comprehensive application of multiple light concentration couplings are completed.

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