A power-up device for GaAs microwave power devices

Abstract

The application discloses a power-on device for a GaAs microwave power device, which comprises a positive voltage input end, a negative voltage input end, a positive and negative voltage protection and surge suppression module, a drain positive voltage output end and a gate negative voltage output end; the positive voltage input end and the negative voltage input end are input ends of the positive and negative voltage protection and surge suppression module and are used for connecting external power supplies; the drain positive voltage output end and the gate negative voltage output end are output ends of the positive and negative voltage protection and surge suppression module and are electrically connected with the GaAs microwave power device to supply power and keep the stability of power-on current; the application has the characteristics of high reliability, stability, high integration and easy realization of the GaAs microwave power device power-on and has universality and can be widely applied to electronic systems such as satellite communication, radar, measurement and control, navigation and countermeasure.

Description

Technical Field

[0001] This invention belongs to the field of aerospace circuit design, and in particular relates to a power supply device for GaAs microwave power devices. Background Technology

[0002] With the rapid advancements in aerospace technology worldwide, solid-state power amplifiers (SPAs) are increasingly widely used in satellites, serving as key components in launch systems. The primary function of microwave SPAs is to amplify and output the input microwave signal within its designated frequency band while suppressing out-of-band clutter. Due to their small size, low operating voltage, good stability, high linearity, and low noise, they are widely used in modern satellite communications, mobile communications, radar, electronic warfare, and various industrial equipment. With the development of new standards and technologies in personal wireless communications and the military field, there is an increasing demand for improved microwave power amplifier performance, achieving superior output power, efficiency, reliability, and size across a wider frequency band. GaAs is one of the most important supporting materials in the current microelectronics industry. Its main characteristics are a wide bandgap, direct bandgap, and high electron mobility (its electron mobility is 7 times higher than that of Si), making it more suitable for manufacturing high-speed, high-frequency, high-power electronic devices. Furthermore, these devices exhibit strong resistance to electromagnetic radiation and a wide operating temperature range, making them a preferred choice for applications in harsh military environments.

[0003] The power-up sequence for GaAs microwave power devices requires applying a negative gate voltage before applying a positive drain voltage. When the gate bias is zero (i.e., there is no gate-source voltage), if a drain voltage is applied, electrons will flow from the source to the drain through the active thin layer. When the drain voltage is sufficiently large, the electron drift velocity reaches its maximum value, the current begins to saturate, and the drain current becomes very large. This causes the power amplifier tube temperature to rise rapidly, potentially even burning out the GaAs microwave power device. Therefore, a negative gate voltage must be applied before applying a positive drain voltage. Simultaneously, a momentary current overshoot occurs during high-current power-up, causing a surge in instantaneous power consumption and placing high demands on the power supply's instantaneous power output capability.

[0004] Currently, no descriptions or reports of technologies similar to this invention have been found, and no similar information has been collected domestically or internationally. Summary of the Invention

[0005] The technical objective of this invention is to provide a power supply device for GaAs microwave power devices to solve the problems mentioned in the background art.

[0006] To solve the above problems, the technical solution of the present invention is as follows:

[0007] A power supply device for GaAs microwave power devices, comprising:

[0008] Positive voltage input terminal, negative voltage input terminal, positive and negative voltage protection and surge suppression module, drain positive voltage output terminal and gate negative voltage output terminal;

[0009] The positive voltage input terminal and the negative voltage input terminal are the input terminals of the positive and negative voltage protection and surge suppression module, which are used to connect to an external power supply; the drain positive voltage output terminal and the gate negative voltage output terminal are the output terminals of the positive and negative voltage protection and surge suppression module, and are electrically connected to the GaAs microwave power device to supply power and maintain the stability of the applied current.

[0010] The positive and negative voltage protection and surge suppression module includes a surge suppression circuit, a positive and negative voltage protection circuit, and a MOSFET.

[0011] One end of the positive and negative voltage protection circuit is electrically connected to the negative voltage input terminal, and the other end of the positive and negative voltage protection circuit is electrically connected to the base of the MOSFET. The drain of the MOSFET is electrically connected to the positive voltage output terminal of the drain. The positive and negative voltage protection circuit is used to cooperate with the MOSFET to provide positive and negative voltage protection for GaAs microwave power devices to be powered on in sequence.

[0012] One end of the surge suppression circuit is electrically connected to the positive voltage input terminal and to the source of the MOSFET. The other end of the surge suppression circuit is electrically connected to the drain of the MOSFET. The surge suppression circuit is used to work with the MOSFET to provide surge suppression for GaAs microwave power devices.

[0013] The positive drain voltage output terminal is used to energize the drain of the GaAs microwave power device, and the negative gate voltage output terminal is used to energize the gate of the GaAs microwave power device.

[0014] Specifically, the surge suppression circuit includes a first RC circuit and a second RC circuit;

[0015] The first RC circuit and the second RC circuit are connected in series. One end of the first RC circuit is electrically connected to the positive voltage input terminal, and the other end of the first RC circuit is electrically connected to one end of the second RC circuit. The other end of the second RC circuit is electrically connected to the base of the MOSFET.

[0016] Specifically, the first RC circuit includes a first capacitor and a fifth resistor, and the second RC circuit includes a second capacitor and a sixth resistor;

[0017] One end of the fifth resistor is electrically connected to one end of the first capacitor and to the positive voltage input terminal; the other end of the fifth resistor is electrically connected to one end of the sixth resistor; the other end of the first capacitor is electrically connected to one end of the second capacitor, the other end of the second capacitor is electrically connected to the other end of the sixth resistor, and the other end of the second capacitor is electrically connected to the base of the MOSFET.

[0018] Specifically, the positive and negative voltage protection circuit includes a Zener diode, a first resistor, a second resistor, a third resistor, a fourth resistor, a first transistor, and a second transistor.

[0019] The positive terminal of the Zener diode is electrically connected to the negative voltage input terminal and the negative voltage output terminal of the gate, respectively. The negative terminal of the Zener diode is electrically connected to one end of the first resistor and one end of the second resistor, respectively. The other end of the first resistor is electrically connected to the source of the MOSFET. The other end of the second resistor is electrically connected to the base of the first transistor, and the emitter of the first transistor is grounded. The collector of the first transistor is electrically connected to one end of the third resistor and one end of the fourth resistor, respectively. The other end of the third resistor is electrically connected to the source of the MOSFET. The other end of the fourth resistor is electrically connected to the base of the second transistor, and the emitter of the second transistor is grounded. The collector of the second transistor is electrically connected to the other end of the fifth resistor and one end of the sixth resistor, respectively.

[0020] Because of the above technical solutions, this invention has the following advantages and positive effects compared with the prior art:

[0021] The present invention provides a power-on device for GaAs microwave power devices. The device is equipped with a positive and negative voltage protection circuit, which effectively avoids damage to GaAs microwave power devices caused by incorrect power-on sequence, thereby improving the reliability of power-on for GaAs microwave power devices.

[0022] The device is also equipped with a surge suppression circuit, which can effectively improve the surge suppression effect during the moment of high current power-on and improve the overall stability of the circuit.

[0023] The power supply device for GaAs microwave power devices provided by this invention has the characteristics of high circuit integration, easy implementation, and versatility, and can be widely used in electronic systems such as satellite communication, radar, telemetry and control, navigation, and countermeasures. Attached Figure Description

[0024] Various other advantages and benefits will become apparent to those skilled in the art upon reading the following detailed description of preferred embodiments. The accompanying drawings are for illustrative purposes only and are not intended to limit the invention.

[0025] Figure 1 This is a topology block diagram of a power supply device for GaAs microwave power devices according to the present invention;

[0026] Figure 2 This is a circuit diagram of a power supply device for GaAs microwave power devices according to the present invention.

[0027] Explanation of reference numerals in the attached figures

[0028] R1: First resistor; R2: Second resistor; R3: Third resistor; R4: Fourth resistor; 5: Fifth resistor; 6: Sixth resistor; C1: First capacitor; C2: Second capacitor; D1: Zener diode; V1: First transistor; V2: Second transistor; V3: MOSFET. Detailed Implementation

[0029] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the specific implementation methods of the present invention will be described below with reference to the accompanying drawings. Obviously, the drawings described below are merely some embodiments of the present invention. For those skilled in the art, other drawings and other implementation methods can be obtained based on these drawings without any creative effort.

[0030] To keep the drawings concise, only the parts relevant to the invention are shown schematically in each figure, and they do not represent the actual structure of the product. Furthermore, for ease of understanding, in some figures, only one of components with the same structure or function is shown schematically, or only one is labeled. In this document, "one" can mean not only "only one" but also "more than one".

[0031] The following detailed description, in conjunction with the accompanying drawings and specific embodiments, provides a power-on device for GaAs microwave power devices according to the present invention. The advantages and features of the invention will become more apparent from the following description and claims.

[0032] Example

[0033] See Figure 1 and Figure 2 This embodiment provides a power supply device for GaAs microwave power devices. Its main body is a positive and negative voltage protection and surge suppression module, which has two input terminals and two output terminals. The input terminals are a positive voltage input terminal and a negative voltage input terminal, which can be connected to an external power supply. The output terminals are a drain positive voltage output terminal and a gate negative voltage output terminal, which are electrically connected to and supply power to the GaAs microwave power device. The drain positive voltage output terminal energizes the drain of the GaAs microwave power device, and the gate negative voltage output terminal energizes the gate of the GaAs microwave power device. After passing through the positive and negative voltage protection and surge suppression module, the external power supply achieves positive and negative voltage protection and surge suppression, ensuring a stable power supply current.

[0034] Specifically, the positive and negative voltage protection and surge suppression module includes a surge suppression circuit, a positive and negative voltage protection circuit, and a MOSFET V3, which is a PMOS transistor.

[0035] One end of the surge suppression circuit is electrically connected to the positive voltage input terminal and to the source of the MOSFET V3. The other end of the surge suppression circuit is electrically connected to the base of the MOSFET V3. The drain of the MOSFET V3 is electrically connected to the drain positive voltage output terminal. The surge suppression circuit is used to cooperate with the MOSFET V3 to provide surge suppression for the GaAs microwave power device when it is powered on in sequence.

[0036] Specifically, see Figure 2 In this embodiment, the surge suppression circuit includes a first RC circuit and a second RC circuit. The first RC circuit and the second RC circuit are connected in series. One end of the first RC circuit is electrically connected to the positive voltage input terminal, and the other end of the first RC circuit is electrically connected to one end of the second RC circuit. The other end of the second RC circuit is electrically connected to the base of the MOSFET V3.

[0037] See Figure 2 Specifically, the first RC circuit includes a first capacitor C1 and a fifth resistor R5, and the second RC circuit includes a second capacitor C2 and a sixth resistor R6. The fifth resistor R5 is connected in parallel with the first capacitor C1, and one end of the fifth resistor R5 is connected to one end of the first capacitor C1 to form a common connection terminal. This common connection terminal is electrically connected to the positive voltage input terminal and also to the source of the MOSFET V3. The second capacitor C2 and the sixth resistor R6 are connected in parallel, and one end of the sixth resistor R6 is electrically connected to the other end of the fifth resistor R5. One end of the second capacitor C2 is electrically connected to the other end of the first capacitor C1, and the other end of the second capacitor C2 is electrically connected to the other end of the sixth resistor R6 to form another common connection terminal, which is electrically connected to the base of the MOSFET V3.

[0038] The working principle of the surge suppression circuit is explained below: A first RC circuit consists of a first capacitor C1 and a fifth resistor R5, and a second RC circuit consists of a second capacitor C2 and a sixth resistor R6. Upon power-up, the first capacitor C1 and the second capacitor C2 are charged respectively. At this time, the Vgs voltage of the MOSFET V3 is 0, the drain and source internal resistance Ri approaches infinity, and the current Ids approaches zero. During the charging process of the first capacitor C1 and the second capacitor C2, the gate voltage of the MOSFET V3 is continuously raised. At this time, the MOSFET operates in the variable resistance region, and its internal resistance continuously decreases. When this potential reaches a certain value, the MOSFET V3 enters the transverse current region, and DS (drain and source) conducts. At this time, the internal resistance is very small, generally within a few ohms. Depending on the circuit, the values ​​of the fifth resistor R5, the sixth resistor R6, and the first and second capacitors C1 and C2 can be adjusted using the capacitor charging formula t = RC * Ln[(V1 - V0) / (V1 - Vt)] to achieve a better suppression effect on the surge current. This ensures that the surge current, surge duration, and surge current rise rate generated by the circuit are less than the maximum values ​​required by the performance indicators.

[0039] See Figure 2 In this embodiment, one end of the positive and negative voltage protection circuit is electrically connected to the negative voltage input terminal, and the other end of the positive and negative voltage protection circuit is electrically connected to the drain of the MOS transistor V3. The positive and negative voltage protection circuit is used to cooperate with the MOS transistor V3 to provide positive and negative voltage protection for the GaAs microwave power device.

[0040] Specifically, the positive and negative voltage protection circuit includes a Zener diode D1, a first resistor R1, a second resistor R2, a third resistor R3, a fourth resistor R4, a first transistor V1, and a second transistor V2. The anode of Zener diode D1 is electrically connected to both the negative voltage input terminal and the gate negative voltage output terminal. The cathode of Zener diode D1 is electrically connected to one end of the first resistor R1 and one end of the second resistor R2. The other end of the first resistor R1 is electrically connected to the source of the MOSFET V3. The other end of the second resistor R2 is electrically connected to the base of the first transistor V1, and the emitter of the first transistor V1 is grounded. The collector of the first transistor V1 is electrically connected to one end of the third resistor R3 and one end of the fourth resistor R4. The other end of the third resistor R3 is electrically connected to the source of the MOSFET V3. The other end of the fourth resistor R4 is electrically connected to the base of the second transistor V2. The emitter of the second transistor V2 is grounded. The collector of the second transistor V2 is electrically connected to the other end of the fifth resistor R5 and one end of the sixth resistor R6, respectively.

[0041] The positive and negative voltage protection circuit works as follows: When a positive voltage is applied to the source of MOSFET V3, a negative voltage is applied to the gate of MOSFET V3 through Zener diode D1 and two transistor switches. When both positive and negative voltages are applied simultaneously, Zener diode D1 breaks down in reverse to achieve voltage regulation. At this time, the first transistor V1 is cut off, while the second transistor V2 is turned on. The gate of MOSFET V3 is connected to ground, Vgs is greater than the turn-on level, and MOSFET V3 turns on. The positive voltage provides bias voltage to the drain of the GaAs FET. When the negative voltage is open-circuited or short-circuited, the first transistor V1 turns on, while the second transistor V2 is cut off. At this time, Vgs is zero, MOSFET V3 is cut off, and the positive voltage cannot pass through. This circuit ensures the power-on sequence of GaAs microwave power devices, guaranteeing the requirement that the gate voltage must be applied before the drain voltage, and preventing potential device damage caused by applying drain voltage when there is no gate voltage.

[0042] The embodiments of the present invention have been described in detail above with reference to the accompanying drawings, but the present invention is not limited to the above embodiments. Even if various changes are made to the present invention, if these changes fall within the scope of the claims of the present invention and their equivalents, they shall still fall within the protection scope of the present invention.

Claims

1. A power supply device for GaAs microwave power devices, characterized in that, include: Positive voltage input terminal, negative voltage input terminal, positive and negative voltage protection and surge suppression module, drain positive voltage output terminal and gate negative voltage output terminal; The positive voltage input terminal and the negative voltage input terminal are the input terminals of the positive and negative voltage protection and surge suppression module, used to connect to an external power supply; the drain positive voltage output terminal and the gate negative voltage output terminal are the output terminals of the positive and negative voltage protection and surge suppression module, and are electrically connected to the GaAs microwave power device for power supply to maintain the stability of the applied current; The positive and negative voltage protection and surge suppression module includes a surge suppression circuit, a positive and negative voltage protection circuit, and a MOSFET; One end of the positive and negative voltage protection circuit is electrically connected to the negative voltage input terminal, and the other end of the positive and negative voltage protection circuit is electrically connected to the base of the MOS transistor. The drain of the MOS transistor is electrically connected to the positive voltage output terminal of the drain. The positive and negative voltage protection circuit is used to cooperate with the MOS transistor to provide positive and negative voltage protection for GaAs microwave power devices to be powered on in sequence. One end of the surge suppression circuit is electrically connected to the positive voltage input terminal and to the source of the MOS transistor, and the other end of the surge suppression circuit is electrically connected to the drain of the MOS transistor. The surge suppression circuit is used to cooperate with the MOS transistor to provide surge suppression for GaAs microwave power devices. The surge suppression circuit includes a first RC circuit and a second RC circuit; The first RC circuit and the second RC circuit are connected in series. One end of the first RC circuit is electrically connected to the positive voltage input terminal, and the other end of the first RC circuit is electrically connected to one end of the second RC circuit. The other end of the second RC circuit is electrically connected to the base of the MOS transistor.

2. The power supply device for GaAs microwave power devices according to claim 1, characterized in that, The positive drain voltage output terminal is used to energize the drain of the GaAs microwave power device. The gate negative voltage output terminal is used to energize the gate of the GaAs microwave power device.

3. The power-on device for GaAs microwave power devices according to claim 1, characterized in that, The first RC circuit includes a first capacitor and a fifth resistor, and the second RC circuit includes a second capacitor and a sixth resistor; One end of the fifth resistor is electrically connected to one end of the first capacitor and to the positive voltage input terminal; the other end of the fifth resistor is electrically connected to one end of the sixth resistor; the other end of the first capacitor is electrically connected to one end of the second capacitor, the other end of the second capacitor is electrically connected to the other end of the sixth resistor, and the other end of the second capacitor is electrically connected to the base of the MOS transistor.

4. The power supply device for GaAs microwave power devices according to claim 3, characterized in that, The positive and negative voltage protection circuit includes a Zener diode, a first resistor, a second resistor, a third resistor, a fourth resistor, a first transistor, and a second transistor. The positive terminal of the Zener diode is electrically connected to the negative voltage input terminal and the gate negative voltage output terminal, respectively. The negative terminal of the Zener diode is electrically connected to one end of the first resistor and one end of the second resistor, respectively. The other end of the first resistor is electrically connected to the source of the MOSFET. The other end of the second resistor is electrically connected to the base of the first transistor, and the emitter of the first transistor is grounded. The collector of the first transistor is electrically connected to one end of the third resistor and one end of the fourth resistor, respectively. The other end of the third resistor is electrically connected to the source of the MOSFET. The other end of the fourth resistor is electrically connected to the base of the second transistor, and the emitter of the second transistor is grounded. The collector of the second transistor is electrically connected to the other end of the fifth resistor and one end of the sixth resistor, respectively.

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