A tri-axis MEMS gyro integrated microsystem and a manufacturing method thereof
By integrating multiple chips with the adapter board chip through 2.5D adapter board packaging technology, the integration density and thickness issues of MEMS gyroscope integrated microsystems are solved, realizing a high-density, small-thickness, and well-heat-dissipated MEMS gyroscope integrated microsystem.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- BEIJING MXTRONICS CORP
- Filing Date
- 2022-09-28
- Publication Date
- 2026-06-02
Smart Images

Figure CN115676766B_ABST
Abstract
Description
Technical Field
[0001] This application relates to the technical field of microsystems, and in particular to a three-axis MEMS gyroscope integrated microsystem and its manufacturing method. Background Technology
[0002] Micro-systems (MSS) are a rapidly developing cutting-edge technology in the last decade. Based on microelectronics, optoelectronics, and micro-electro-mechanical systems (MEMS), they combine system architecture and algorithms, employing systems engineering design methods to integrate sensing, communication, processing, execution, and micro-energy functional units using micro-nano scale microsystem packaging technology. MEMS gyroscope integrated microsystems integrate MEMS gyroscopes and signal processing circuits through advanced packaging technology. They can measure the angular velocity of objects and are mainly used in drones, robots, and consumer electronics. Existing MEMS gyroscope integrated microsystems primarily utilize high-density packaging substrates to integrate MEMS gyroscope chips and signal processing circuit chips. A few utilize 2.5D adapter board packaging technology to achieve even higher integration density. Their main drawback is:
[0003] (1) The integration density using high-density packaging substrates has reached its limit, and it is impossible to further reduce the device size to meet the application requirements of higher integration density.
[0004] (2) Since general MEMS gyroscope chips have sealing caps, their overall thickness is more than twice that of signal processing circuit chips. Therefore, the method of using 2.5D adapter boards results in a large size difference in the Z direction, a large overall system thickness, and is not conducive to heat dissipation of signal processing circuit chips. Summary of the Invention
[0005] This application provides a triaxial MEMS gyroscope integrated microsystem and its manufacturing method, aiming to solve the problems of insufficient integration density of existing high-density packaging substrate methods, large thickness of 2.5D adapter board methods, and poor heat dissipation.
[0006] In a first aspect, a triaxial microelectromechanical system (MEMS) gyroscope integrated microsystem is provided, comprising:
[0007] A three-axis MEMS gyroscope chip, including the gyroscope mechanical structure;
[0008] An adapter board chip is bonded to the gyroscope mechanical structure. The adapter board chip has an adapter board groove, which is disposed opposite to the gyroscope mechanical structure to form a gyroscope protective cavity of the gyroscope mechanical structure.
[0009] Compared with the prior art, the solution provided in this application has at least the following beneficial technical effects:
[0010] (1) The triaxial MEMS gyroscope integrated microsystem of the present invention adopts 2.5D adapter board packaging technology to integrate the triaxial MEMS gyroscope chip, programmable logic circuit chip, small signal detection and processing chip, analog-to-digital converter chip, digital-to-analog converter chip, driver chip, configuration storage chip, and adapter board chip into a single packaged device. The system has high integration density and small size, which solves the problem of limited integration density in the previous method of using high-density packaging substrate.
[0011] (2) The triaxial MEMS gyroscope integrated microsystem of the present invention adopts an adapter board chip that combines the functions of a gyroscope sealing cover and an adapter board. The gyroscope chip and signal processing circuit chip with the same thickness are integrated on the same plane through 2.5D packaging technology. The overall thickness of the system is small and uniform, which solves the problem of large size difference in the Z direction and large overall thickness of the MEMS gyroscope integrated microsystem made by the previous 2.5D adapter board packaging method.
[0012] (3) The triaxial MEMS gyroscope integrated microsystem of the present invention has a uniform overall thickness, which makes it easy to add heat sinks directly to the surface of the signal processing chip for heat dissipation, thus solving the problem that the MEMS gyroscope integrated microsystem made by the previous 2.5D adapter board packaging method is not conducive to heat dissipation of the signal processing circuit chip.
[0013] (4) The triaxial MEMS gyroscope integrated microsystem of the present invention integrates a triaxial MEMS gyroscope chip, a programmable logic circuit chip, a small signal detection and processing chip, an analog-to-digital converter chip, a digital-to-analog converter chip, a driver chip, a configuration storage chip, and an adapter board chip into a single packaged device. It has multiple functions such as angular velocity measurement, analog-to-digital conversion, digital-to-analog conversion, and high-speed data processing, which improves the overall working efficiency of the system and is easy to integrate into the next level system.
[0014] In conjunction with the first aspect, in some implementations of the first aspect, a gyroscope chip wiring is provided on the side of the gyroscope mechanical structure near the adapter board chip, and the adapter board chip is provided with a top layer wiring, wherein the gyroscope chip wiring and the top layer wiring are interconnected.
[0015] Setting up wiring connections on top of bonding can ensure signal transmission quality.
[0016] In conjunction with the first aspect, in some implementations of the first aspect, the projection area of the adapter plate groove on the three-axis MEMS gyroscope chip is located outside the wiring of the gyroscope chip.
[0017] This avoids affecting signal interaction.
[0018] In conjunction with the first aspect, in certain implementations of the first aspect, the triaxial MEMS gyroscope integrated microsystem further includes one or more of the following:
[0019] Programmable logic circuit chips, small signal detection and processing chips, analog-to-digital converter chips, digital-to-analog converter chips, driver chips, and configuration memory chips.
[0020] Secondly, a three-axis MEMS gyroscope integrated microsystem is provided, including:
[0021] Adapter board chip;
[0022] A three-axis MEMS gyroscope chip is disposed on an adapter board chip. The three-axis MEMS gyroscope chip includes a silicon substrate, a gyroscope mechanical structure, and a gyroscope cap. The gyroscope mechanical structure is located between the silicon substrate and the gyroscope cap, and the gyroscope cap faces the adapter board chip.
[0023] The gyroscope cap has a first cap groove on the side near the gyroscope mechanical structure. The first cap groove is disposed opposite to the gyroscope mechanical structure to form a gyroscope protective cavity of the gyroscope mechanical structure.
[0024] This addresses the problems of insufficient integration density in existing high-density packaging substrates, large thickness in 2.5D adapter board methods, and poor heat dissipation.
[0025] In conjunction with the second aspect, in some implementations of the second aspect, the first gyroscope chip wiring is provided on the side of the gyroscope mechanical structure near the gyroscope cap, and the second gyroscope chip wiring is provided on the side of the gyroscope cap near the gyroscope mechanical structure, wherein the first gyroscope chip wiring and the second gyroscope chip wiring are bonded together.
[0026] The gyroscope cap also has a through hole and a third gyroscope chip wiring. The third gyroscope chip wiring is located on the side of the gyroscope cap closer to the adapter board chip. The through hole connects the second gyroscope chip wiring and the third gyroscope chip wiring and is spaced apart from the first cap groove.
[0027] Setting up wiring connections on top of bonding can ensure signal transmission quality.
[0028] In conjunction with the second aspect, in certain implementations of the second aspect, the triaxial MEMS gyroscope integrated microsystem further includes one or more of the following:
[0029] Programmable logic circuit chips, small signal detection and processing chips, analog-to-digital converter chips, digital-to-analog converter chips, driver chips, and configuration memory chips.
[0030] Thirdly, an electronic device is provided, the electronic device comprising a three-axis MEMS gyroscope integrated microsystem as described in any of the implementations of the first aspect above.
[0031] Fourthly, a fabrication method for a triaxial MEMS gyroscope integrated microsystem is provided, including:
[0032] Obtain the raw materials for the adapter board chips;
[0033] The adapter board groove is obtained through chip processing.
[0034] Fabricate wiring and pads around the groove of the adapter plate;
[0035] The gyro mechanical structure of a three-axis MEMS gyroscope chip is assembled onto the chip material of an adapter board using a chip-wafer bonding process to obtain a three-axis MEMS gyroscope integrated microsystem.
[0036] Fifthly, a method for fabricating a three-axis MEMS gyroscope chip is provided, including:
[0037] A mechanical structure wafer with a gyroscope-like mechanical structure was fabricated using an etching process.
[0038] A gyroscope cap wafer with a first cap groove was fabricated using an etching process;
[0039] Through-holes were fabricated on the gyroscope cap wafer using etching, PECVD, sputtering, and electroplating processes.
[0040] The mechanical structure wafer and the gyroscope cap wafer are assembled together using a wafer bonding process;
[0041] The via is exposed by thinning the side of the gyroscope cap wafer away from the mechanical structure wafer through a thinning process.
[0042] The three-axis MEMS gyroscope chip was obtained by dicing. Attached Figure Description
[0043] Figure 1 This is a schematic structural diagram of a three-axis MEMS gyroscope integrated microsystem provided in an embodiment of this application.
[0044] Figure 2 This is a schematic structural diagram of a three-axis MEMS gyroscope integrated microsystem provided in an embodiment of this application.
[0045] Figure 3 This is a schematic diagram illustrating the working principle of a three-axis MEMS gyroscope integrated microsystem provided in an embodiment of this application.
[0046] Figure 4This is a schematic flowchart illustrating a fabrication method for a three-axis MEMS gyroscope chip provided in an embodiment of this application.
[0047] Figure 5 This is a schematic flowchart illustrating a fabrication method for a three-axis MEMS gyroscope integrated microsystem provided in an embodiment of this application.
[0048] Figure 6 This is a schematic structural diagram of a three-axis MEMS gyroscope integrated microsystem provided in an embodiment of this application.
[0049] Figure 7 This is a schematic flowchart illustrating a fabrication method for a three-axis MEMS gyroscope integrated microsystem provided in an embodiment of this application. Detailed Implementation
[0050] The present application will now be described in further detail with reference to the accompanying drawings and specific embodiments.
[0051] Figure 1 This is a schematic structural diagram of a three-axis MEMS gyroscope integrated microsystem provided in an embodiment of this application.
[0052] The triaxial MEMS gyroscope integrated microsystem 1 may include an adapter board chip 9 and a triaxial MEMS gyroscope chip 2. The triaxial MEMS gyroscope chip 2 is disposed on the adapter board chip 9. The triaxial MEMS gyroscope chip 2 may include a silicon substrate 19, a gyroscope mechanical structure 18, and a gyroscope cap 21. A gyroscope protection cavity 10 may be formed between the silicon substrate 19 and the gyroscope cap 21. The gyroscope mechanical structure 18 is located between the silicon substrate 19 and the gyroscope cap 21, and the gyroscope mechanical structure 18 can vibrate within the gyroscope protection cavity 10.
[0053] The gyroscope cap 21 can be located on the side of the three-axis MEMS gyroscope chip 2 closest to the adapter board chip 9. The gyroscope cap 21 can face the adapter board chip 9 so that the three-axis MEMS gyroscope chip 2 and the adapter board chip 9 can be electrically connected through the gyroscope cap 21. The gyroscope cap 21 can have a through-silicon via (TSV) 11. A gyroscope chip wiring 22b can be provided on the side of the gyroscope cap 21 closest to the gyroscope mechanical structure 18. A gyroscope chip wiring 17 can be provided on the side of the gyroscope cap 21 away from the gyroscope mechanical structure 18. The through-silicon via (TSV) 11 of the gyroscope cap 21 can be connected between the gyroscope chip wiring 17 and the gyroscope chip wiring 22b.
[0054] The signal connection method of the triaxial MEMS gyroscope integrated microsystem 1 proposed in this invention is as follows: gyroscope chip wiring 22a can be provided on the side of the gyroscope mechanical structure 18 near the gyroscope cap 21. Through wafer bonding, gyroscope chip wiring 22a can be interconnected with gyroscope chip wiring 22b on the gyroscope cap 21 (gyroscope chip wiring 22a and gyroscope chip wiring 22b can be combined into gyroscope chip wiring 22). The through-silicon via (TSV) 11 of the gyroscope cap 21 can achieve signal interconnection between gyroscope chip wiring 22 and gyroscope chip wiring 17 on the other side of the gyroscope cap 21. The triaxial MEMS gyroscope chip 2 can be assembled onto the adapter board chip 9 through chip-wafer bonding. Gyroscope chip wiring 17 can be interconnected with the top layer wiring 12 on the adapter board chip 9 during bonding.
[0055] In some embodiments, other devices may also be disposed on the adapter chip 9. For example... Figure 1 and Figure 2 As shown, the adapter chip 9 can also be equipped with a programmable logic circuit chip 3, a small signal detection and processing chip 4, an analog-to-digital converter chip 5, a digital-to-analog converter chip 6, a driver chip 7, and a configuration memory chip 8. These devices can be assembled onto the adapter chip 9, for example, using a flip-chip bonding process. The bottom microbumps 20 of these devices are interconnected with the top-layer pads 14 of the adapter chip 9. The three-axis MEMS gyroscope chip 2 can interact with these devices via the adapter chip 9. In one possible scenario, the top-layer wiring 12 and the bottom-layer wiring 13 (located on opposite sides of the adapter chip 9) on the adapter chip 9 can enable signal interconnection between different chips in the X and Y directions, while the through-silicon vias (TSVs) 11 on the adapter chip 9 can enable signal interconnection in the Z direction.
[0056] The following is combined with Figure 3This paper elucidates a possible working principle of the triaxial MEMS gyroscope integrated microsystem 1 proposed in this invention. The three-axis MEMS gyroscope chip 2, through its gyroscope mechanical structure 18, can sense the angular velocity in the X, Y, and Z directions generated by external forces and output three analog signals related to the angular velocity. These three analog signals are transmitted to the small signal detection and processing chip 4, where the analog signals are converted, filtered, amplified, and modulated. The analog signals are then transmitted to the analog-to-digital converter chip 5, where they are converted to digital signals and output to the programmable logic circuit chip 3. The programmable logic circuit chip 3 processes the received digital signals using gyroscope algorithm code to obtain gyroscope angular velocity data, which is output to the system. Simultaneously, it obtains gyroscope control digital signals and outputs them to the digital-to-analog converter chip 6. The digital-to-analog converter chip 6 converts the digital signals to analog signals. These analog signals are input to the driver chip 7, modulated and amplified, and then output to the three-axis MEMS gyroscope chip 2 to drive it. The configuration storage chip 8 stores the gyroscope algorithm and configures it into the programmable logic circuit chip 3.
[0057] In one possible scenario, the three-axis MEMS gyroscope chip 2 is a capacitive three-axis MEMS gyroscope with a measurement range of ±180° / s, zero-bias stability of 5° / h, and angle random walk. When the gyroscope mechanical structure 18 receives an external force and its angular velocity changes, it generates a change in motion mode, which causes the tiny capacitance analog signal output by the three-axis MEMS gyroscope chip 2 to change.
[0058] In one possible scenario, the programmable logic circuit chip 3 is a 1 million equivalent system gate FPGA, internally containing programmable logic modules (CLBs), general-purpose input / output modules (IOBs), and various IP resources. It can be field-configured via JTAG, serial mode, or parallel mode to flexibly implement various required functions. The programmable logic circuit chip 3 uses a serial configuration mode, configuring the gyroscope algorithm stored in the configuration memory chip 8 onto the programmable logic circuit chip 3. This algorithm processes the received three 12-bit digital signals to obtain three 14-bit gyroscope control digital signals, which are then output to the digital-to-analog converter chip 6. Simultaneously, the gyroscope angular velocity data is obtained and output to the system.
[0059] In one possible scenario, the small signal detection and processing chip 4 is a multi-functional high-precision, low-noise signal detection chip that can convert the tiny capacitance analog signal output by the three-axis MEMS gyroscope chip 2 into a voltage signal through C / V conversion, and then filter, amplify and modulate this signal.
[0060] In one possible scenario, the analog-to-digital converter chip 5 is a three-channel 12-bit analog-to-digital converter that employs a multi-stage differential input pipeline structure and output logic error correction circuitry to ensure 12-bit accuracy across the entire operating temperature range and at a sampling frequency of 30MHz. The analog-to-digital converter chip 5 converts the signal output from the small signal detection and processing chip 4 into three 12-bit digital signals, which are then provided to the programmable logic circuit chip 3.
[0061] In one possible scenario, the digital-to-analog converter chip 6 is a three-channel 14-bit digital-to-analog converter with a conversion accuracy of 50 MSPS, capable of digital-to-analog conversion, digital control logic, and full-scale output current control. The digital-to-analog converter chip 6 converts the received three 14-bit gyroscope control digital signals into analog signals, and outputs these analog gyroscope control signals to the driver chip 7.
[0062] In one possible scenario, the driver chip 7 is a dedicated MEMS gyroscope driver chip that can modulate and amplify the gyroscope analog control signal output by the digital-to-analog converter chip 6 to achieve resonant drive control of the three-axis MEMS gyroscope chip 2.
[0063] In one possible scenario, the configuration memory chip 8 is a rewritable, non-volatile, in-circuit programmable 32Mbit FLASH memory. The configuration memory chip 8 stores gyroscope algorithms, which can be programmed into it via external software. Upon receiving a signal from the programmable logic circuit chip 3, the configuration memory chip 8 configures the gyroscope algorithm into the programmable logic circuit chip 3.
[0064] In some embodiments, to reduce the overall thickness of the triaxial MEMS gyroscope chip, the side of the gyroscope cap 21 closest to the gyroscope mechanical structure 18 may have a first cap groove. The first cap groove may be disposed opposite to the gyroscope mechanical structure 18, allowing the gyroscope mechanical structure 18 to vibrate within the first cap groove. That is, the first cap groove may be part of the gyroscope protective cavity 10. To avoid affecting signal interaction, the first cap groove may be spaced apart from the through-silicon via (TSV) 11 of the gyroscope cap 21.
[0065] In some embodiments, to reduce the overall thickness of the triaxial MEMS gyroscope chip 2, the side of the gyroscope cap 21 facing away from the gyroscope mechanical structure 18 may have a second cap groove. The second cap groove can be used to accommodate the gyroscope chip wiring 17. That is, the gyroscope chip wiring 17 can be embedded in the space formed by the second cap groove.
[0066] In some embodiments, to reduce the overall thickness of the three-axis MEMS gyroscope chip 2, the second cap groove can be used to accommodate the top-level wiring 12 on the adapter board chip 9. That is, the space formed by the second cap groove can be used to realize the interconnection space between the gyroscope chip wiring 17 and the top-level wiring 12. To avoid wiring interference, the projection area of the top-level wiring 12 on the three-axis MEMS gyroscope chip can be located within the second cap groove.
[0067] In some embodiments, by reducing the overall thickness of the three-axis MEMS gyroscope chip, the overall thickness 2 of the three-axis MEMS gyroscope chip can be made approximately the same as the thickness of other devices on the adapter chip 9. Therefore, the overall thickness of the three-axis MEMS gyroscope integrated microsystem 1 proposed in this invention is consistent.
[0068] The following is combined with Figure 4 ,introduce Figure 1 One possible manufacturing method for the three-axis MEMS gyroscope chip 2 shown.
[0069] ① A mechanical structure wafer 23 with a gyroscope mechanical structure 18 is fabricated by etching process, and a gyroscope protective cavity 10 with a gyroscope cap wafer 24 is fabricated by etching process. A through silicon via (TSV) 11 is fabricated by etching, PECVD, sputtering and electroplating processes. ② The mechanical structure wafer 23 and the gyroscope cap wafer 24 are assembled together by wafer bonding process to form a sealed structure to ensure the performance of the gyroscope mechanical structure 18. ③ The gyroscope cap wafer 24 is thinned by thinning process, and a three-axis MEMS gyroscope chip 2 with a thickness of 450um is separated by dicing process.
[0070] The following is combined with Figure 5 ,introduce Figure 1 A possible manufacturing method for the triaxial MEMS gyroscope integrated microsystem 1 shown.
[0071] ① Prepare the Si wafer for fabricating the adapter chip 9; ② Fabricate the SiO2 layer 25 using thermal oxidation, and pattern the SiO2 layer 25 to expose the area for fabricating through-silicon vias (TSVs) 11; ③ Etch the TSV 11 area using DRIE process; ④ Fabricate the insulating layer and seed layer of the TSV 11 using PECVD and sputtering processes, and fill the TSV 11 with Cu metal using electroplating and CMP processes; ⑤ Fabricate the top layer wiring 12 and top layer pad 14 using sputtering and electroplating processes; ⑥ Attach the 450µm thick three-axis MEMS gyroscope chip using chip-wafer bonding process. 2. Assemble onto the Si wafer of the adapter board chip 9. ⑦ Assemble onto the Si wafer of the adapter board chip 9 using a flip-chip bonding process, including the programmable logic circuit chip 3, small signal detection and processing chip 4, analog-to-digital converter chip 5, digital-to-analog converter chip 6, driver chip 7, and configuration memory chip 8, all with a thickness of 450µm and pre-fabricated bottom microbumps 20. ⑧ Assemble onto the carrier wafer 26 using a temporary bonding process. ⑨ Thin the Si wafer of the adapter board chip 9 to expose through-silicon vias (TSVs) 11 using a thinning process. ⑩ Fabricate the bottom layer wiring 13 and bottom layer pads 15 using sputtering and electroplating processes, and fabricate the bottom layer bumps 16 using a ball-mounting process. The carrier wafer 26 was removed by debonding process, and the triaxial MEMS gyroscope integrated microsystem 1 was separated by dicing process.
[0072] Figure 6 This is a schematic structural diagram of another three-axis MEMS gyroscope integrated microsystem provided in the embodiments of this application.
[0073] The triaxial MEMS gyroscope integrated microsystem 1 may include an adapter board chip 9 and a triaxial MEMS gyroscope chip 2. The triaxial MEMS gyroscope chip 2 is disposed on the adapter board chip 9. The triaxial MEMS gyroscope chip 2 may include a silicon substrate 19 and a gyroscope mechanical structure 18. That is, with Figure 1 Compared to the three-axis MEMS gyroscope chip shown, the three-axis MEMS gyroscope chip 2 may not have a gyroscope cap 21. The gyroscope cap 21 can be omitted to reduce the overall thickness of the three-axis MEMS gyroscope chip 2. Therefore, the overall thickness of the three-axis MEMS gyroscope chip 2 can be made approximately the same as the thickness of other devices on the adapter chip 9. Thus, the overall thickness of the three-axis MEMS gyroscope integrated microsystem 1 proposed in this invention is consistent.
[0074] The gyro mechanical structure 18 can be located on the side of the three-axis MEMS gyro chip 2 closest to the adapter chip 9. The gyro mechanical structure 18 can face the adapter chip 9 so that the three-axis MEMS gyro chip 2 and the adapter chip 9 can be electrically connected through the gyro mechanical structure 18. Gyro chip wiring 17 can be provided on the side of the gyro mechanical structure 18 closest to the adapter chip 9. Thus, the three-axis MEMS gyro chip 2 can be assembled onto the adapter chip 9 using a chip-to-wafer bonding process. The gyro chip wiring 17 can be interconnected with the top layer wiring 12 on the adapter chip 9 during bonding.
[0075] To provide sufficient vibration space for the gyroscope mechanical structure 18, the adapter board chip 9 can be provided with an adapter board groove. The adapter board groove can be positioned opposite to the gyroscope mechanical structure 18, allowing the gyroscope mechanical structure 18 to vibrate within the adapter board groove. In other words, the adapter board groove can provide a gyroscope protection cavity 10 for the gyroscope mechanical structure 18. To avoid affecting signal interaction, the projection area of the adapter board groove on the three-axis MEMS gyroscope chip 2 can be located outside the gyroscope chip wiring 17.
[0076] and Figure 1 and Figure 2 The illustrated embodiments are similar, in Figure 6 In the triaxial MEMS gyroscope integrated microsystem 1 shown, the adapter board chip 9 may also be equipped with a programmable logic circuit chip 3, a small signal detection and processing chip 4, an analog-to-digital converter chip 5, a digital-to-analog converter chip 6, a driver chip 7, and a configuration storage chip 8.
[0077] In one possible scenario, the three-axis MEMS gyroscope chip 2 is a capacitive three-axis MEMS gyroscope with a measurement range of ±450° / s, zero-bias stability of 10° / h, and angle random walk. When the gyroscope mechanical structure 18 receives an external force and its angular velocity changes, it generates a change in motion mode, which causes the tiny capacitance analog signal output by the three-axis MEMS gyroscope chip 2 to change.
[0078] In one possible scenario, the programmable logic circuit chip 3 is a 3.5 million equivalent system gate FPGA containing various hard IP system-level modules, including a powerful 36Kb block RAM / FIFO, a second-generation 25x18 DSP slice, an enhanced clock management module with an integrated digital clock manager (DCM) and phase-locked loop (PLL) clock generator, and advanced configuration options. The programmable logic circuit chip 3 uses a serial configuration mode, configuring the gyroscope algorithm stored in the configuration memory chip 8 to the programmable logic circuit chip 3. This algorithm processes the received three 14-bit digital signals to obtain three 16-bit gyroscope control digital signals, which are then output to the digital-to-analog converter chip 6. Simultaneously, the gyroscope angular velocity data is obtained and output to the system.
[0079] In one possible scenario, the small signal detection and processing chip 4 is a multi-functional high-precision, low-noise signal detection chip that can convert the tiny capacitance analog signal output by the three-axis MEMS gyroscope chip 2 into a voltage signal through C / V conversion, and then filter, amplify and modulate this signal.
[0080] In one possible scenario, the analog-to-digital converter chip 5 is a three-channel 14-bit pipelined analog-to-digital converter with a 100MSPS sampling rate. The analog-to-digital converter chip 5 converts the signal output from the small signal detection and processing chip 4 into three 14-bit digital signals and provides them to the programmable logic circuit chip 3.
[0081] In one possible scenario, the digital-to-analog converter chip 6 is a three-channel 16-bit, low-power, high-performance digital-to-analog converter with a conversion accuracy of 400MSPS. The digital-to-analog converter chip 6 performs digital-to-analog conversion on the received three 14-bit gyroscope control digital signals to obtain analog signals, and outputs this gyroscope control analog signal to the driver chip 7.
[0082] In one possible scenario, the driver chip 7 is a dedicated MEMS gyroscope driver chip that can modulate and amplify the gyroscope analog control signal output by the digital-to-analog converter chip 6 to achieve resonant drive control of the three-axis MEMS gyroscope chip 2.
[0083] In one possible scenario, the configuration memory chip 8 is a rewritable, non-volatile, in-circuit programmable 64Mbit FLASH memory. The configuration memory chip 8 stores gyroscope algorithms, which can be programmed into it via external software. Upon receiving a signal from the programmable logic circuit chip 3, the configuration memory chip 8 configures the gyroscope algorithm into the programmable logic circuit chip 3.
[0084] Figure 6 The signal connection method and working principle of the triaxial MEMS gyroscope integrated microsystem 1 shown can be referred to Figures 1 to 3 The embodiments shown will not be described in detail here.
[0085] The following is combined with Figure 7 ,introduce Figure 6 A possible manufacturing method for the triaxial MEMS gyroscope integrated microsystem 1 shown.
[0086] ① Prepare the Si wafer for fabricating the adapter chip 9. ② Fabricate the SiO2 layer 25 using thermal oxidation, and pattern the SiO2 layer 25 to expose the area for fabricating through-silicon vias (TSVs) 11. ③ Etch the TSV 11 area using DRIE. ④ Pattern the SiO2 layer again to expose the area for fabricating the gyroscope protection cavity 10. ⑤ Etch the gyroscope protection cavity 10 and the TSV 11 area using DRIE. ⑥ Fabricate the insulating layer and seed layer of the TSV 11 using PECVD and sputtering processes, and fill the TSV 11 with Cu metal using electroplating and CMP processes. ⑦ Complete the sputtering and electroplating processes. The process involves fabricating top-layer wiring 12 and top-layer pads 14, followed by: ⑧ Assembling a 400µm thick triaxial MEMS gyroscope chip 2 onto the Si wafer of the adapter board chip 9 using chip-wafer bonding technology; ⑨ Forming a sealed structure with the triaxial MEMS gyroscope chip 2 to ensure the performance of the gyroscope mechanical structure 18; ⑨ Assembling a programmable logic circuit chip 3, a small signal detection and processing chip 4, an analog-to-digital converter chip 5, a digital-to-analog converter chip 6, a driver chip 7, and a configuration memory chip 8 (all with 400µm thickness and pre-fabricated bottom microbumps 20) onto the Si wafer of the adapter board chip 9 using flip-chip bonding technology; and ⑩ Assembling a temporary bonding process onto the mounting wafer 26. The Si wafer of the adapter board chip 9 is thinned to expose the through silicon via (TSV) 11 through a thinning process. The bottom layer wiring 13 and bottom layer pads 15 are fabricated using sputtering and electroplating processes, and the bottom layer bumps 16 are fabricated using a ball-planting process. The carrier wafer 26 was removed by debonding process, and the three-axis MEMS gyroscope integrated microsystem 1 was separated by dicing process.
[0087] Although the present invention has been disclosed above with reference to preferred embodiments, it is not intended to limit the present invention. Any person skilled in the art can make possible changes and modifications without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the present invention should be determined by the scope defined in the claims of the present invention.
Claims
1. A triaxial microelectromechanical system (MEMS) gyroscope integrated microsystem (1), characterized in that, The triaxial MEMS gyroscope integrated microsystem (1) is packaged using a 2.5D adapter board and includes: A three-axis MEMS gyroscope chip (2) includes a gyroscope mechanical structure (18). The adapter board chip (9) is bonded to the gyroscope mechanical structure (18). The adapter board chip (9) has an adapter board groove (31). The adapter board groove (31) is arranged opposite to the gyroscope mechanical structure (18) to form the gyroscope protection cavity (10) of the gyroscope mechanical structure (18). The adapter board chip (9) is provided with: a programmable logic circuit chip (3), a small signal detection and processing chip (4), an analog-to-digital converter chip (5), a digital-to-analog converter chip (6), a driver chip (7), and a configuration memory chip (8). The gyroscope mechanical structure (18) has a gyroscope chip wiring (17) on the side near the adapter board chip (9), and the adapter board chip (9) has a top layer wiring (12). The gyroscope chip wiring (17) and the top layer wiring (12) are interconnected. The projection area of the adapter plate groove (31) on the three-axis MEMS gyroscope chip (2) is outside the wiring (17) of the gyroscope chip.
2. An electronic device, characterized in that, The electronic device includes the triaxial microelectromechanical system (MEMS) gyroscope integrated microsystem as described in claim 1 (1).
3. A method for fabricating a triaxial microelectromechanical system (MEMS) gyroscope integrated microsystem as described in claim 1, characterized in that, include: Obtain the raw materials for the adapter board chips; The adapter board groove is obtained through chip processing. Fabricate wiring and pads around the groove of the adapter plate; The gyro mechanical structure of a three-axis MEMS gyroscope chip is assembled onto the chip material of an adapter board using a chip-wafer bonding process to obtain a three-axis MEMS gyroscope integrated microsystem.