Micro light emitting diode device, manufacturing method and display device

Abstract

The embodiment of the present application provides a micro-light emitting diode device, a manufacturing method and a display device. Among them, the micro-light emitting diode device includes a backplane; a plurality of micro-light emitting diodes, wherein the plurality of micro-light emitting diode arrays are arranged on the backplane, and each of the micro-light emitting diodes includes a bottom wall close to the backplane, a top wall away from the backplane, and a side wall connecting the bottom wall and the top wall; a protective layer, wherein the protective layer is arranged on a portion of the sidewalls of each micro-light emitting diode to reduce the sidewall leakage current, and the protective layer is formed by in-situ polymerization of an in-situ cross-linkable lipoic acid gel layer. The embodiment of the present application uses the second layer of spatial force of the in-situ cross-linkable lipoic acid gel layer, under the action of coordination bonds, to achieve a lower interface trap density between the protective layer and GaN, thereby solving the problem of leakage current at the edge of the micro-light emitting diode device.

Description

Technical Field

[0001] The present application relates to the field of display, and in particular to a micro light emitting diode device, a manufacturing method and a display apparatus. Background Art

[0002] In recent years, micro light-emitting diode devices (Mirco-LED) are increasingly considered as an alternative technology to existing light sources. Due to its outstanding advantages and rapid development, Mirco-LED display technology has become a hot spot for major panel manufacturers. Compared with current LCD and OLED display devices, both have the advantages of fast response, high color gamut, high PPI, low energy consumption, ultra-high number of partitions for precise dimming, and ultra-high contrast.

[0003] However, micro-light emitting diode devices (Mirco-LEDs) have the problem of edge leakage current. Summary of the Invention

[0004] The embodiments of the present application provide a micro light emitting diode device, a manufacturing method and a display device, which can improve the edge leakage current problem of existing micro light emitting diode devices (Mirco-LEDs).

[0005] The present invention provides a micro-light emitting diode device, comprising:

[0006] Back panel;

[0007] A plurality of micro light emitting diodes, wherein the plurality of micro light emitting diode arrays are arranged on the back plate, and each of the micro light emitting diodes includes a bottom wall close to the back plate, a top wall away from the back plate, and a side wall connecting the bottom wall and the top wall;

[0008] A protective layer is provided on the sidewall of each of the micro-light emitting diodes, and is formed by in-situ polymerization of an in-situ cross-linkable lipoic acid gel layer.

[0009] Optionally, the sidewall of each of the micro-LEDs is covered by the protective layer.

[0010] Optionally, the top wall includes a central area and a peripheral area arranged around the central area, the peripheral area is connected to the side wall, and the protective layer is provided on a portion of the peripheral area.

[0011] Optionally, the chemical formula of the lipoic acid gel layer formed by in-situ polymerization is

[0012]

[0013] Optionally, the micro light emitting diode device further includes:

[0014] A lower contact electrode is provided on a side of the micro-LED close to the backplane, and an orthographic projection of the lower contact electrode on the backplane is smaller than or equal to an orthographic projection of the micro-LED on the backplane.

[0015] Optionally, the micro light emitting diode device further includes:

[0016] A bonding metal layer is provided on a side of the lower contact electrode close to the back plate, and an orthographic projection of the bonding metal layer on the back plate is larger than an orthographic projection of the micro light emitting diode on the back plate.

[0017] The present invention also provides a method for manufacturing a micro-LED device, the method comprising:

[0018] Obtain a plurality of micro light emitting diodes, each of the micro light emitting diodes comprising a bottom wall close to the back plate, a top wall away from the back plate, and a side wall connecting the bottom wall and the top wall;

[0019] A protective layer is provided on the side wall of each micro-LED, wherein the protective layer is formed by in-situ polymerization of a lipoic acid gel layer capable of in-situ cross-linking;

[0020] Get the backplane;

[0021] The plurality of micro light emitting diode arrays are arranged on the back plate.

[0022] Optionally, providing a protective layer on the sidewall of each micro-LED includes:

[0023] coating the sidewalls of the micro-LED with an in-situ cross-linkable lipoic acid gel layer;

[0024] The lipoic acid gel layer is in-situ polymerized to form the protective layer on the side wall of each micro-light emitting diode.

[0025] Optionally, obtaining a plurality of micro light emitting diodes includes:

[0026] obtaining a growth substrate;

[0027] sequentially depositing an epitaxial material layer and a metal material layer on the growth substrate;

[0028] Obtaining a de-adhesion layer and a temporary substrate, and bonding the metal material layer to the temporary substrate through the de-adhesion layer;

[0029] separating the growth substrate from the epitaxial material layer;

[0030] The epitaxial material layer is processed to form the micro light emitting diodes distributed in an array.

[0031] Optionally, a bonding metal layer is provided on the backplane, and the step of providing the plurality of micro-LED arrays on the backplane includes:

[0032] Processing the metal electrode material layer to form a lower contact electrode layer, wherein the lower contact electrode layer is disposed on a side of the micro-LED away from the top wall;

[0033] The micro light emitting diode and the lower contact electrode are transferred to the back plate so that the lower contact electrode is aligned and bonded to the bonding metal layer.

[0034] An embodiment of the present application further provides a display device comprising a micro-light emitting diode device as described in any one of the above items.

[0035] The beneficial effects of the present application are as follows: the micro-LED device provided by the embodiment of the present application includes a backplane and a plurality of micro-LEDs, wherein the plurality of micro-LED arrays are arranged on the backplane, each micro-LED includes a bottom wall close to the backplane, a top wall away from the backplane, and a side wall connecting the bottom wall and the top wall, and a protective layer is provided on the sidewall of each micro-LED, and the protective layer is formed by in-situ polymerization of an in-situ cross-linkable lipoic acid gel layer. The embodiment of the present application provides a protective layer formed by in-situ polymerization of an in-situ cross-linkable lipoic acid gel layer on the sidewall of the micro-LED. Through the second layer spatial force of the in-situ cross-linkable lipoic acid gel layer, under the action of the coordination bond, a lower interface trap density is created between the protective layer and the GaN, thereby reducing the sidewall leakage current to solve the edge leakage current problem. In addition, the protective layer has a stronger bonding force with the GaN sidewall, is less likely to peel off, and is less likely to produce cracks, further improving the ability to prevent leakage current. BRIEF DESCRIPTION OF THE DRAWINGS

[0036] To more clearly illustrate the technical solutions in the embodiments of the present application, the following briefly introduces the drawings required for describing the embodiments. Obviously, the drawings described below are only some embodiments of the present application. Those skilled in the art can also derive other drawings based on these drawings without inventive effort.

[0037] In order to more completely understand the present application and its beneficial effects, the following description will be given in conjunction with the accompanying drawings. In the following description, the same reference numerals represent the same parts.

[0038] Figure 1 This is a schematic structural diagram of a micro light-emitting diode device provided in an embodiment of the present application.

[0039] Figure 2 for Figure 1Another structural schematic diagram of a micro light emitting diode in a micro light emitting diode device is shown.

[0040] Figure 3 A schematic flow chart of a method for manufacturing a micro light-emitting diode device provided in an embodiment of the present application.

[0041] Figure 4 for Figure 3 A schematic diagram of the process of obtaining multiple micro light emitting diodes in the manufacturing method shown.

[0042] Figure 5 for Figure 3 The figure shows a schematic diagram of the process of providing a protective layer on the sidewall of each micro light emitting diode in the manufacturing method.

[0043] Figure 6 for Figure 3 The process flow chart of obtaining micro light-emitting diodes and protective layers in the manufacturing method shown is shown.

[0044] Figure 7 for Figure 3 The figure shows a schematic diagram of the process of disposing a plurality of micro-LED arrays on a backplane in the manufacturing method.

[0045] Figure 8 for Figure 3 The process flow chart of disposing multiple micro-LED arrays on a backplane in the manufacturing method shown is shown. DETAILED DESCRIPTION

[0046] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the embodiments described are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without making creative efforts are within the scope of protection of this application.

[0047] In the description of the present application, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as limiting the present application. In addition, the terms "first" and "second" are used for descriptive purposes only and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include one or more of the said features. In the description of the present application, "multiple" means two or more, unless otherwise clearly and specifically defined.

[0048] To reduce sidewall leakage in micro-light-emitting diode (Mirco-LED) devices, the sidewalls are typically protected. Common sidewall protection methods include depositing inorganic insulating layers such as SiO2, SiN, MgO, and Gd2O3. However, these layers exhibit high interface trap densities with GaN and do not effectively address edge leakage. Using a single organic film for sidewall protection can lead to poor adhesion to the GaN sidewalls, resulting in flaking and cracking.

[0049] Therefore, in order to solve the above problems, the present application proposes a micro light emitting diode device, a manufacturing method and a display device. The present application will be further described below with reference to the accompanying drawings and embodiments.

[0050] See also Figure 1 , Figure 1Schematic diagram of the structure of a micro-LED device provided in an embodiment of the present application. The embodiment of the present application provides a micro-LED device 100, which includes a backplane 10 and a plurality of micro-LEDs 20. The plurality of micro-LEDs 20 are arranged in an array on the backplane 10. Each micro-LED 20 includes a bottom wall close to the backplane 10, a top wall away from the backplane, and a side wall connecting the bottom wall and the top wall. A protective layer 30 is provided on the sidewall of each micro-LED 20 to reduce sidewall leakage current. The protective layer 30 is formed by in-situ polymerization of an in-situ cross-linkable lipoic acid gel layer. The embodiment of the present application provides a protective layer 30 formed by in-situ polymerization of an in-situ cross-linkable lipoic acid gel layer on the sidewall of the micro-LED 20. Through the second layer spatial force of the in-situ cross-linkable lipoic acid gel layer, under the action of coordination bonds, a lower interface trap density is created between the protective layer 30 and GaN, thereby solving the edge leakage current problem. In addition, the protective layer 30 has a stronger bonding force with the GaN sidewall, is less likely to peel off, and is less likely to crack, further improving the ability to prevent leakage current.

[0051] In some embodiments, the sidewalls of the micro-LED 20 are covered by a protective layer 30 to better prevent leakage current. In other embodiments, while ensuring effective leakage current prevention, the protective layer 30 may be provided on a portion of the sidewalls of the micro-LED 20 to reduce costs. It should be noted that the area of ​​the sidewalls of the micro-LED 20 where the protective layer 30 is provided is determined based on actual needs and is not specifically limited herein.

[0052] The chemical formula of the protective layer 30 formed by in-situ polymerization of the in-situ cross-linkable lipoic acid gel layer is:

[0053]

[0054] The second layer of the lipoic acid gel layer of the protective layer 30 combines with GaN under the action of coordination bonds, thereby reducing the sidewall leakage current. The specific molecular structure is as follows:

[0055]

[0056] The micro-LED device 100 further includes a lower contact electrode 40 , which is disposed on a side of the micro-LED 20 close to the backplane 10 , and the orthographic projection of the lower contact electrode 40 on the backplane 10 is less than or equal to the orthographic projection of the micro-LED 20 on the backplane 10 .

[0057] It should be noted that the protective layer 30 only covers the micro-LEDs 20 and does not cover the lower contact electrodes 40. That is, the protective layer 30 provided on the sidewalls does not extend to the lower contact electrodes 40. By not providing the protective layer 30 on the lower contact electrodes 40, alignment deviation or bonding anomalies between the lower contact electrodes 40 and the bonding metal layer 50 can be avoided when transferring the micro-LEDs 20 to the backplane 10.

[0058] The micro-LED device 100 further includes a bonding metal layer 50, which is disposed on the side of the lower contact electrode 40 that is adjacent to the backplate 10. The orthographic projection of the bonding metal layer 50 on the backplate 10 is larger than the orthographic projection of the micro-LED 20 on the backplate 10. The bonding metal layer 50 is used for soldering the lower contact electrode 40. By enlarging the bonding metal layer 50, the bonding strength between the bonding metal layer and the lower contact electrode 40 is strengthened, thereby improving the bonding strength between the backplate 10 and the micro-LED 20.

[0059] Please continue reading Figure 2 , Figure 2 for Figure 1 Another schematic diagram of the structure of a micro-LED in a micro-LED device is shown. The micro-LED 20 includes sidewalls 220 and a top wall 210 connected to the sidewalls 220. The top wall 210 is disposed on the side of the micro-LED 20 away from the backplane 10. The top wall 210 includes a central region 211 and a peripheral region 212 surrounding the central region 211. The peripheral region 212 is connected to the sidewalls 220. In some embodiments, a protective layer 30 is disposed on a portion of the peripheral region 212. By connecting the protective layer 30 disposed on the sidewalls 220 and the protective layer 30 disposed on the top wall 210, leakage current can be better addressed.

[0060] It should be noted that the specific arrangement of the protective layer 30 on the top wall 210 needs to be determined based on actual conditions while ensuring the lighting effect.

[0061] Please continue reading Figure 3 , Figure 3 This is a flow chart of a method for manufacturing a micro-light-emitting diode device provided in an embodiment of the present application. This embodiment of the present application also provides a method for manufacturing a micro-light-emitting diode device. The specific process of the manufacturing method is as follows:

[0062] 101. Obtain a plurality of micro light emitting diodes, each of which includes a top wall and a bottom wall opposite to each other, and a side wall connecting the bottom wall and the top wall.

[0063] It should be noted that the plurality of micro-LEDs can be obtained by manufacturing or directly obtained from other places, and the specific configuration is based on the actual situation. The embodiment of the present application is described by taking the manufacturing of a plurality of micro-LEDs as an example, and should not be understood as limiting the present invention.

[0064] 102. A protective layer is provided on the side wall of each micro-LED, and the protective layer is formed by in-situ polymerization of a lipoic acid gel layer that can be in-situ cross-linked.

[0065] A plurality of micro-LEDs 20 are manufactured, so that a protective layer 30 is provided on at least a portion of the sidewall 220 of each micro-LED 20. The protective layer 30 is used to reduce leakage current from the sidewall 220. The specific process of manufacturing the plurality of micro-LEDs 20 and providing the protective layer on the sidewall of the micro-LED 20 can be found in the following. Figures 4 to 6 , Figure 4 for Figure 3 A schematic diagram of the process of obtaining multiple micro light emitting diodes in the manufacturing method shown. Figure 5 for Figure 3 The figure shows a schematic diagram of the process of providing a protective layer on the sidewall of each micro light emitting diode in the manufacturing method. Figure 6 for Figure 3 The process flow chart for obtaining micro-LEDs and protective layers in the manufacturing method shown is as follows:

[0066] 201. Obtain a growth substrate.

[0067] 202. Deposit an epitaxial material layer and a metal material layer in sequence on a growth substrate.

[0068] An epitaxial material layer 620 and a metal material layer 630 are sequentially deposited on a growth substrate 610 , wherein the epitaxial material layer 620 is made of GaN, ie, gallium nitride.

[0069] 203. Obtain a de-adhesion layer and a temporary substrate, and bond the metal material layer to the temporary substrate through the de-adhesion layer.

[0070] The growth substrate 610 is turned downward so that the metal material layer 630 is located at the bottom, and the metal material layer 630 is bonded to the temporary substrate 650 via the de-adhesion layer 640 . The de-adhesion layer 640 may be a magnetron reversible adhesion-de-adhesion layer 640 .

[0071] In some embodiments, the preparation method of the magnetically controlled reversible adhesion-deadhesion layer 640 is:

[0072] Polyurethane M is used as a continuous phase, and 1-20% of unmodified commercial ferroferric oxide particles are blended in a molten state at 100°C to prepare a magnetically controlled organic-inorganic composite material. The polyurethane M is synthesized from three components: end-hydroxylated polyolefin diol, diphenylmethane diisocyanate, and 4-(2-aminoethyl)morpholine. Due to the presence of multiple hydrogen bonds in the polyurethane M, the organic-inorganic composite material itself has good adhesion. When the organic-inorganic composite material is placed in an oscillating magnetic field, the ferroferric oxide particles couple with the magnetic field, generating a hysteresis thermal effect, which increases the temperature of the organic-inorganic composite material and further weakens the hydrogen bonds between the polyurethane molecules, thereby achieving debonding of the organic-inorganic composite material from the adhered surface.

[0073] 204. Separate the growth substrate from the epitaxial material layer.

[0074] The growth substrate 610 is separated from the epitaxial material layer 620 to remove the growth substrate 610 .

[0075] In some embodiments, a photoresist protection layer is further formed over the epitaxial material layer 620. The photoresist protection layer includes a plurality of photoresist protection units 660 of equal size, which are spaced apart from each other and arranged in an array over the epitaxial material layer 620. The photoresist protection units 660 are used to protect the epitaxial material layer 620 below the photoresist protection units 660 during etching, so that the portion of the epitaxial material layer 620 is not etched.

[0076] 205. Process the epitaxial material layer to form array-distributed micro light emitting diodes.

[0077] The epitaxial material layer 620 is etched to remove the epitaxial material layer 620 where the photoresist protection unit 660 is not provided, leaving the unetched epitaxial material layer 620 to form the micro-LEDs 20 distributed in an array.

[0078] Please refer again Figure 5 The specific process of providing a protective layer on the sidewall of each micro-LED is as follows:

[0079] 301. Coating the sidewall of the micro-LED with an in-situ cross-linkable lipoic acid gel layer.

[0080] The surface of the gallium nitride material layer on the micro-LED 20 is coated with a lipoic acid gel layer that can be in-situ cross-linked.

[0081] 302. Perform in-situ polymerization on the lipoic acid gel layer to form a protective layer on the sidewall of each micro-LED.

[0082] The in-situ cross-linkable lipoic acid gel layer on the metal electrode material layer where the micro-LEDs 20 are not provided is removed, and the remaining in-situ cross-linkable lipoic acid gel layer is heated to polymerize the lipoic acid gel layer in situ and completely release the solvent to form the sidewall 220 protective layer 30 .

[0083] Heating at 60° C. for 4 hours can in situ polymerize the in situ cross-linkable lipoic acid gel layer and completely decompose the solvent to form a protective layer 30. The chemical equation corresponding to the formation of the protective layer 30 is as follows:

[0084]

[0085] In some embodiments, a method for preparing an in situ cross-linkable lipoic acid gel layer is as follows: 2 g of commercially available lipoic acid monomer is added to a clean flask and stirred at 40°C for 0.5 hour. The resulting product is dissolved in 20 mL of tetrahydrofuran, which is then poured into 200 mL of ether to obtain a lipoic acid solution. The lipoic acid solution is stirred at 40°C for 1.0 hour to obtain a lipoic acid gel.

[0086] 103. Get the backplane.

[0087] A back plate 10 is obtained, on which a plurality of bonding metal layers 50 are disposed. The plurality of bonding metal layers 50 are arranged in an array.

[0088] 104. Arrange multiple micro light emitting diode arrays on the back panel.

[0089] The plurality of micro-LED arrays 20 are transferred to the back plate 10 to form a micro-LED device 100. The specific process can be found in Figure 7 and Figure 8 , Figure 7 for Figure 3 The figure shows a schematic diagram of the process of disposing a plurality of micro-LED arrays on a backplane in the manufacturing method. Figure 8 for Figure 3 The process flow chart of placing multiple micro-LED arrays on a backplane in the manufacturing method shown is as follows:

[0090] 401. Process the metal electrode material layer to form a lower contact electrode layer, and the lower contact electrode layer is arranged on a side of the micro light emitting diode away from the top wall.

[0091] The area on the metal electrode material layer where the micro-LEDs 20 are not provided is etched to obtain a lower metal contact electrode layer. Each metal contact electrode layer is correspondingly provided below a micro-LED 20 .

[0092] 402. Transfer the micro light emitting diode and the lower contact electrode to the back plate so that the lower contact electrode is aligned and bonded to the bonding metal layer.

[0093] In some embodiments, before transferring the micro-LEDs to the backplane, the photoresist layer disposed on the outer surface of the micro-LEDs 20 needs to be removed.

[0094] In some embodiments, the outer surface of the micro-LED 20 with the photoresist layer removed can be roughened to effectively increase the light extraction efficiency of the upper surface of the micro-LED 20 , thereby improving the luminous efficiency of the micro-LED 20 .

[0095] The lower contact electrode 40 connected to the micro-LED 20 is aligned and bonded to the bonding metal layer 50 on the back plate 10 , so that an array of multiple micro-LEDs 20 is arranged on the back plate 10 .

[0096] The protective layer 30 on the side wall 220 of the micro-LED 20 in the embodiment of the present application is not prone to peeling, and can provide better protection for the side wall 220, reduce leakage current of the side wall 220, and improve luminous efficiency; the present invention has no requirements on the morphology of the side wall 220 of the micro-LED 20, and the process is simple, and can achieve the purpose of protecting the side wall 220.

[0097] An embodiment of the present application further provides a display device, which includes the micro-light emitting diode device described in any one of the above items.

[0098] The above describes in detail the micro-LED device, manufacturing method, and display device provided in the embodiments of the present application. Specific examples are used herein to illustrate the principles and implementation methods of the present application. The description of the above embodiments is intended only to facilitate understanding of the present application. Furthermore, those skilled in the art will appreciate that variations in the specific implementation methods and scope of application may occur based on the concepts of the present application. Therefore, the contents of this specification should not be construed as limiting the present application.

Claims

1. A micro light emitting diode device, characterized in that: The micro light emitting diode device comprises: Back panel; A plurality of micro light emitting diodes, wherein the plurality of micro light emitting diode arrays are arranged on the back plate, and each of the micro light emitting diodes includes a bottom wall close to the back plate, a top wall away from the back plate, and a side wall connecting the bottom wall and the top wall; A protective layer is provided on the gallium nitride sidewall of each micro-LED, and is formed by in-situ polymerization of an in-situ cross-linkable lipoic acid gel layer.

2. The micro light emitting diode device according to claim 1, characterized in that: The sidewall of each of the micro-LEDs is covered by the protection layer.

3. The micro light emitting diode device according to claim 1, characterized in that: The top wall includes a central area and a peripheral area arranged around the central area. The peripheral area is connected to the side wall, and the protective layer is arranged on a portion of the peripheral area.

4. The micro light emitting diode device according to any one of claims 1 to 3, characterized in that: The chemical formula of the lipoic acid gel layer formed by in-situ polymerization is:

5. The micro light emitting diode device according to claim 1, characterized in that: The micro light emitting diode device further comprises: A lower contact electrode is provided on a side of the micro-LED close to the backplane, and an orthographic projection of the lower contact electrode on the backplane is smaller than or equal to an orthographic projection of the micro-LED on the backplane.

6. The micro light emitting diode device according to claim 5, characterized in that: The micro light emitting diode device further comprises: A bonding metal layer is provided on a side of the lower contact electrode close to the back plate, and an orthographic projection of the bonding metal layer on the back plate is larger than an orthographic projection of the micro light emitting diode on the back plate.

7. A method for manufacturing a micro light emitting diode device, characterized in that: The production method comprises: Obtain a plurality of micro-light emitting diodes, each of the micro-light emitting diodes comprising a top wall and a bottom wall opposite to each other, and a side wall connecting the bottom wall and the top wall; Disposing a protective layer on the gallium nitride sidewall of each micro-LED, wherein the protective layer is formed by in-situ polymerization of a lipoic acid gel layer that can be in-situ cross-linked; Get the backplane; The plurality of micro light emitting diode arrays are arranged on the back plate.

8. The production method according to claim 7, characterized in that: The step of providing a protective layer on the sidewall of each micro-LED comprises: coating the sidewalls of the micro-LED with an in-situ cross-linkable lipoic acid gel layer; The lipoic acid gel layer is in-situ polymerized to form the protective layer on the side wall of each micro-light emitting diode.

9. The production method according to claim 8, characterized in that: The obtaining of a plurality of micro light emitting diodes comprises: obtaining a growth substrate; sequentially depositing an epitaxial material layer and a metal material layer on the growth substrate; Obtaining a de-adhesion layer and a temporary substrate, and bonding the metal material layer to the temporary substrate through the de-adhesion layer; separating the growth substrate from the epitaxial material layer; The epitaxial material layer is processed to form the micro light emitting diodes distributed in an array.

10. The manufacturing method according to claim 9, characterized in that: A bonding metal layer is provided on the backplane, and the step of providing the plurality of micro-light emitting diode arrays on the backplane includes: Processing the metal material layer to form a lower contact electrode layer, wherein the lower contact electrode layer is disposed on a side of the micro-LED away from the top wall; The micro light emitting diode and the lower contact electrode are transferred to the back plate so that the lower contact electrode is aligned and bonded to the bonding metal layer.

11. A display device, characterized in that: The micro light emitting diode device comprises the micro light emitting diode device according to any one of claims 1 to 6.

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