Display panel and manufacturing method thereof

Abstract

This invention relates to a display panel and its manufacturing method. The display panel includes a driving backplane and a plurality of light-emitting devices located on one side of the driving backplane. Each light-emitting device includes: a first electrode electrically connected to the driving backplane, with the first electrodes in each light-emitting device being independently disposed; an epitaxial structure, with the epitaxial structure in each light-emitting device being independently disposed on the side of the first electrode away from the driving backplane, and each epitaxial structure including a first semiconductor layer, an active layer, and a second semiconductor layer sequentially stacked along a direction away from the driving backplane; and a second common electrode electrically connected to the driving backplane, and the second common electrode including a transparent conductive film, which is in contact with the second semiconductor layer in each epitaxial structure. With the same number of pixels, the light-emitting devices with the above structure improve the transparency of the display panel; similarly, with the same transparency, more light-emitting devices with the above structure can be arranged, thereby increasing the PPI of the display panel.

Description

Technical Field

[0001] This invention relates to the field of display technology, and in particular to a display panel and its manufacturing method. Background Technology

[0002] Micro-LED (Micro Light Emitting Diode) is a next-generation display technology. Compared to existing LCD displays, it offers higher photoelectric efficiency, higher brightness, higher contrast, and lower power consumption. It can also be combined with flexible panels to achieve flexible displays. Like traditional LED displays, it operates on the same light-emitting principle and is currently commonly used as the light-emitting pixel unit in transparent LED screens.

[0003] With the continuous development of display technology, transparent screens have emerged, offering users an unprecedented visual experience and a completely new feel compared to traditional LCD displays. Due to the inherent screen and transparency of LED transparent screens, they can be used in many applications, serving as both a display and a replacement for transparent flat glass. LED transparent screens are primarily used in exhibitions and product displays. They allow viewers to see the image on the screen while simultaneously seeing the objects behind it, enhancing information delivery efficiency and adding a lot of visual interest.

[0004] However, for existing LED transparent screens, there is currently no effective solution for achieving a higher pixel count (Pixels Per Inch, PPI) or higher transparency at the same PPI. Summary of the Invention

[0005] In view of the shortcomings of the prior art, the purpose of this application is to provide a display panel and a method for manufacturing the same, in order to solve the problem that the display panels in the prior art are difficult to achieve higher PPI under the same transmittance or higher transparency under the same PPI.

[0006] A display panel includes a driving backplate and a plurality of light-emitting devices located on one side of the driving backplate, the light-emitting devices including:

[0007] The first electrode is electrically connected to the driving backplate, and the first electrodes in each light-emitting device are set independently.

[0008] The epitaxial structure is independently disposed on the side of the first electrode away from the driving back plate, and each epitaxial structure includes a first semiconductor layer, an active layer and a second semiconductor layer sequentially stacked along the direction away from the driving back plate.

[0009] The second common electrode is electrically connected to the driving backplane, and the second common electrode includes a transparent conductive film, which is in contact with the second semiconductor layer in each epitaxial structure.

[0010] In the present invention described above, because the light-emitting device has a vertical structure, the chip size can be made smaller than that of a flip chip. Furthermore, because the light-emitting device has a second common electrode including a transparent conductive film, light shading is reduced, resulting in higher overall light transmittance. Therefore, for the same pixel count (PPI), the light-emitting device with the above structure not only occupies a smaller area but also saves on in-plane metal traces, thus improving the transparency of the display panel. Similarly, for the same transparency, more light-emitting devices with the above structure can be arranged, thereby increasing the PPI of the display panel and improving the display effect.

[0011] Optionally, the first electrode is the anode, and the second common electrode is the cathode. The second common electrode is a common cathode electrode, which can be electrically connected to the cathode traces in the driving backplane. This common cathode design saves on in-plane metal traces, further improving the transparency of the display panel. In this case, the first semiconductor layer in the epitaxial structure is an N-type semiconductor layer, and the second semiconductor layer is a P-type semiconductor layer.

[0012] Optionally, the side of the second semiconductor layer away from the active layer has a first surface, and the transparent conductive film completely covers the first surface. By making the transparent conductive film completely cover the surface of the second semiconductor layer in the epitaxial structure away from the active layer, good ohmic contact can be achieved between the transparent conductive film and the second semiconductor layer, which is beneficial for current input.

[0013] Optionally, the transparent conductive film is a nano-conductive network. A nano-conductive network is a network structure formed by interconnecting nano-conductive materials. The interconnection of nano-conductive materials forms a conductive circuit, which can achieve excellent current transmission. The numerous pores in the nano-conductive network can also ensure that the transparent conductive film has excellent light transmittance. The aforementioned nano-conductive network may include a silver nanowire conductive network and / or a carbon nanotube conductive network.

[0014] Optionally, the driving backplate includes: a transparent substrate; a first conductive portion disposed on the side of the transparent substrate near the light-emitting device, and the first conductive portion contacting a second common electrode; a second conductive portion disposed on the side of the first conductive portion away from the transparent substrate, and the second conductive portion contacting the first electrode; and a first insulating layer disposed between the first conductive portion and the second conductive portion. The first conductive portion can be a lead portion, which, through contact with the second common electrode, enables electrical connection between the second common electrode and the driving backplate. The second conductive portion can be a metal pad, which, through contact with the first electrode, enables electrical connection between the first electrode and the driving backplate. The first insulating layer isolates the first conductive portion from the second conductive portion.

[0015] Optionally, the display panel further includes: a second insulating layer covering the exposed surfaces of the first electrode and the second conductive portion; and a transparent conductive film covering the side of the second insulating layer away from the first electrode and the second conductive portion. The second insulating layer prevents the transparent conductive film from contacting the first electrode and the second conductive portion, respectively.

[0016] Optionally, a second insulating layer covers the surface of the first insulating layer facing away from the transparent substrate, exposing only the second semiconductor layer. A transparent conductive film encapsulates the first surface and the second insulating layer. The second insulating layer insulates the transparent conductive film from the active layer, thereby preventing the first and second semiconductor layers from being connected through the transparent conductive film and thus avoiding any impact on carrier recombination luminescence. Furthermore, when the active layer is a quantum well, the second insulating layer also prevents the transparent conductive film from directly contacting the quantum well and affecting its internal electron density distribution.

[0017] Optionally, the second insulating layer is a transparent insulating layer. Using a transparent insulating layer can ensure the transparency of the display panel. The material forming the transparent insulating layer can be polydimethylsiloxane (PDMS). For ease of curing, the material forming the transparent insulating layer can be a UV-type PDMS material.

[0018] Optionally, the display panel further includes a welding part, which is connected to the first electrode in each light-emitting device and the first conductive part in the driving back plate, respectively. The material of the welding part can be selected from any one of indium, tin-indium alloy and indium-bismuth alloy.

[0019] Based on the same inventive concept, this application also provides a method for manufacturing a display panel, comprising the following steps:

[0020] Multiple independent epitaxial structures and a first electrode corresponding to each epitaxial structure are sequentially formed on a first substrate. The epitaxial structure includes a first semiconductor layer, an active layer and a second semiconductor layer sequentially stacked along a direction away from the first electrode.

[0021] A drive backplane is provided so that the first electrode is electrically connected to the drive backplane;

[0022] Remove the first substrate so that the side of the second semiconductor layer away from the active layer has an exposed surface;

[0023] By contacting the transparent conductive film with the exposed surface of the second semiconductor layer, a second common electrode electrically connected to the drive backplane is obtained.

[0024] Using the above-described manufacturing method of the present invention, the formed light-emitting device has a vertical structure, thereby allowing the chip size to be smaller than that of a flip chip. Furthermore, because the second common electrode of the formed light-emitting device includes a transparent conductive film, it reduces light occupancy, resulting in higher overall light transmittance. Therefore, for the same pixel count (PPI), the light-emitting device with the above structure not only occupies a smaller area but also saves on in-plane metal traces, thus improving the transparency of the display panel. Similarly, for the same transparency, more light-emitting devices with the above structure can be arranged, thereby increasing the PPI of the display panel and improving the display effect.

[0025] Optionally, the aforementioned driving backplate includes a transparent substrate, a first conductive portion, a second conductive portion, and a first insulating layer. The first conductive portion is in contact with a second common electrode. The second conductive portion is disposed on the side of the first conductive portion away from the transparent substrate and is in contact with the first electrode. The first insulating layer is disposed between the first conductive portion and the second conductive portion. Before the step of electrically connecting the second common electrode on the driving backplate, the manufacturing method further includes the step of forming a second insulating layer on the driving backplate to cover the exposed surfaces of the first electrode and the second conductive portion. The aforementioned second insulating layer can prevent the transparent conductive film from contacting the first electrode and the second conductive portion respectively.

[0026] Optionally, the step of contacting the transparent conductive film with the exposed surface of the second semiconductor layer includes: spraying a solution containing nano-conductive materials onto a drive backplate to cover the exposed surface of the second semiconductor layer; and drying the solution to form a nano-conductive network of nano-conductive materials. Drying evaporates the solvent, allowing the nano-conductive materials to interconnect and form the nano-conductive network.

[0027] Optionally, the solution is dried at 150°C for 10–30 minutes. These process conditions ensure complete solvent evaporation, avoiding the impact of solvent residue on the conductivity of the nano-conductive network. Attached Figure Description

[0028] Figure 1 This is a schematic cross-sectional view of a display panel according to one embodiment of the present invention;

[0029] Figure 2 This is a flowchart illustrating a method for manufacturing a display panel according to one embodiment of the present invention;

[0030] Figure 3 This is a schematic diagram of the structure of a substrate after forming a plurality of independent epitaxial structures and a first electrode corresponding to each epitaxial structure sequentially on a first substrate in a method for manufacturing a display panel according to an embodiment of the present invention.

[0031] Figure 4 In order to make Figure 3 A schematic diagram of the substrate structure after the first electrode is electrically connected to the driving backplate;

[0032] Figure 5 To remove Figure 4 The diagram shows the structure of the first substrate with the second semiconductor layer having an exposed surface on the side away from the active layer.

[0033] Figure 6 In order to be in Figure 5 The diagram shows the structure of the substrate after the second insulating layer is formed on the drive backplate.

[0034] Figure 7 To combine transparent conductive film with Figure 6 The diagram shows the structure of the substrate after the exposed surface of the second semiconductor layer contacts the second common electrode that is electrically connected to the driving backplane.

[0035] Explanation of reference numerals in the attached figures:

[0036] 10-First electrode; 20-Epipolar structure; 210-First semiconductor layer; 220-Active layer; 230-Second semiconductor layer; 30-First substrate; 40-Bonding part; 50-Driving backplate; 510-Transparent substrate; 520-First conductive part; 530-First insulating layer; 540-Second conductive part; 60-Second insulating layer; 70-Transparent conductive film. Detailed Implementation

[0037] To facilitate understanding of this application, a more complete description will be provided below with reference to the accompanying drawings. Preferred embodiments of this application are shown in the drawings. However, this application can be implemented in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided to provide a more thorough and complete understanding of the disclosure of this application.

[0038] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein in the specification of this application is for the purpose of describing particular embodiments only and is not intended to be limiting of this application.

[0039] As described in the background section, there is currently no effective solution for achieving a higher pixel count (Pixels Per Inch, PPI) or higher transparency at the same PPI in existing LED transparent screens.

[0040] Therefore, this application aims to provide a solution that can solve the above-mentioned technical problems, the details of which will be described in subsequent embodiments.

[0041] The inventors of this application have researched the above-mentioned problems and proposed a display panel, such as... Figure 1 As shown, it includes a driving backplate 50 and multiple light-emitting devices located on one side of the driving backplate 50. The light-emitting devices include:

[0042] The first electrode 10 is electrically connected to the driving back plate 50, and the first electrode 10 in each light-emitting device is set independently.

[0043] Epitaxial structure 20, each of the epitaxial structures 20 in the light-emitting device is independently disposed on the side of the first electrode 10 away from the driving back plate 50, and each epitaxial structure 20 includes a first semiconductor layer 210, an active layer 220 and a second semiconductor layer 230 sequentially stacked in the direction away from the driving back plate 50.

[0044] The second common electrode is electrically connected to the driving backplate 50, and the second common electrode includes a transparent conductive film 70, which is in contact with the second semiconductor layer 230 in each epitaxial structure 20.

[0045] In the present invention described above, because the light-emitting device has a vertical structure, the chip size can be made smaller than that of a flip chip. Furthermore, because the light-emitting device includes a second common electrode with a transparent conductive film 70, it reduces light occupancy, resulting in higher overall light transmittance. Therefore, for the same pixel count (PPI), the light-emitting device with the above structure not only occupies a smaller area but also saves on in-plane metal traces, thus improving the transparency of the display panel. Similarly, for the same transparency, more light-emitting devices with the above structure can be arranged, thereby increasing the PPI of the display panel and improving the display effect.

[0046] In some embodiments, the first electrode 10 is the anode, and the second common electrode is the cathode. The aforementioned second common electrode is a common cathode electrode, which can be electrically connected to the cathode traces in the drive backplane 50. The common cathode design can save more metal traces in the plane, thereby further improving the transparency of the display panel.

[0047] In the above embodiment, the first semiconductor layer 210 in the epitaxial structure 20 is an N-type semiconductor layer, and the second semiconductor layer 230 is a P-type semiconductor layer.

[0048] For example, the N-type semiconductor layer is an N-type gallium nitride layer, the P-type semiconductor layer is a P-type gallium nitride layer, and the active layer 220 is a quantum well layer (MQW). The quantum well layer can be a single quantum well layer or a multi-quantum well layer, and there is no limitation herein.

[0049] For example, the material of the first electrode 10 may include any one or more of Sn, In, AuSn, SnAg, SnBi, SnAgBi, SnAgCu, and SnAgCuNi. However, it is not limited to the above-mentioned optional types, and those skilled in the art can reasonably select the material of the first electrode 10 according to the prior art.

[0050] In some embodiments, the side of the second semiconductor layer 230 away from the active layer 220 has a first surface, and the transparent conductive film 70 completely covers the first surface.

[0051] In the above embodiment, by making the transparent conductive film 70 completely cover the surface of the second semiconductor layer 230 in the epitaxial structure 20 away from the active layer 220, a good ohmic contact can be achieved between the transparent conductive film 70 and the second semiconductor layer 230, which is beneficial to the input of current.

[0052] For example, the transparent conductive material in the transparent conductive film 70 includes nano-indium tin oxide and / or fluorine-doped tin oxide.

[0053] In some embodiments, the transparent conductive film 70 is a nano-conductive network. A nano-conductive network is a network structure formed by interconnecting nano-conductive materials. The interconnection of nano-conductive materials forms a conductive circuit, which can achieve excellent current transmission. The numerous pores in the nano-conductive network can also ensure that the transparent conductive film 70 has excellent light transmittance.

[0054] For example, the above-mentioned nanoconductive network may include a silver nanowire conductive network and / or a carbon nanotube conductive network.

[0055] In some embodiments, the aforementioned driving backplate 50 includes a transparent substrate 510, a first conductive portion 520, a second conductive portion 540, and a first insulating layer 530. The first conductive portion 520 is disposed on the side of the transparent substrate 510 close to the light-emitting device and is in contact with the second common electrode. The second conductive portion 540 is disposed on the side of the first conductive portion 520 away from the transparent substrate 510 and is in contact with the first electrode 10. The first insulating layer 530 is disposed between the first conductive portion 520 and the second conductive portion 540.

[0056] In the above embodiments, to ensure the light transmittance of the transparent substrate 510, the transparent substrate 510 can be a glass substrate or a sapphire substrate, but is not limited to these types; the first conductive portion 520 can be a lead portion, which contacts the second common electrode to achieve electrical connection between the second common electrode and the driving backplate 50; the second conductive portion 540 can be a metal pad, which contacts the first electrode 10 to achieve electrical connection between the first electrode 10 and the driving backplate 50; the first insulating layer 530 is used to isolate the first conductive portion 520 from the second conductive portion 540; the material of the first insulating layer 530 can be a conventional insulating material in the prior art, such as silicon oxide (SiO2). x ).

[0057] In some embodiments, the display panel further includes a second insulating layer 60 covering the exposed surfaces of the first electrode 10 and the second conductive portion 540; a transparent conductive film 70 covers the side of the second insulating layer 60 away from the first electrode 10 and the second conductive portion 540. The second insulating layer 60 prevents the transparent conductive film 70 from contacting the first electrode 10 and the second conductive portion 540, respectively.

[0058] In the above embodiment, the second insulating layer 60 can be placed over the surface of the first insulating layer 530 facing away from the transparent substrate 510, exposing only the second semiconductor layer 230. The transparent conductive film 70 encapsulates the second semiconductor layer 230 and the second insulating layer 60. The second insulating layer 60 can insulate the transparent conductive film 70 to the active layer 220, thereby avoiding the influence on carrier recombination luminescence caused by the first semiconductor layer 210 and the second semiconductor layer 230 being connected through the transparent conductive film 70. Furthermore, when the active layer 220 is a quantum well, the second insulating layer 60 can also prevent the transparent conductive film 70 from directly contacting the quantum well and affecting its internal electron density distribution.

[0059] In the above embodiment, the second insulating layer 60 can be a transparent insulating layer. Using a transparent insulating layer can ensure the transparency of the display panel.

[0060] For example, the material forming the above-mentioned transparent insulating layer can be polydimethylsiloxane (PDMS), and for ease of curing, the material forming the above-mentioned transparent insulating layer can be a UV-type PDMS material.

[0061] In some embodiments, the display panel further includes a welding portion 40, which is connected to the first electrode 10 in each light-emitting device and the first conductive portion 520 in the drive backplate 50.

[0062] For example, the material of the welded part 40 can be selected from any one of indium, tin-indium alloy and indium-bismuth alloy.

[0063] Based on the same inventive concept, this application also provides a method for manufacturing the above-mentioned display panel, such as... Figure 2 As shown, it includes the following steps:

[0064] S1, a plurality of independent epitaxial structures 20 and a first electrode 10 corresponding to each epitaxial structure 20 are sequentially formed on the first substrate 30. The epitaxial structure 20 includes a first semiconductor layer 210, an active layer 220 and a second semiconductor layer 230 sequentially stacked along a direction away from the first electrode 10, such as Figure 3 As shown;

[0065] S2, a drive backplate 50 is provided to electrically connect the first electrode 10 to the drive backplate 50, such as... Figure 4 As shown;

[0066] S3, remove the first substrate 30, so that the side of the second semiconductor layer 230 away from the active layer 220 has an exposed surface, such as... Figure 5 As shown;

[0067] S4, the transparent conductive film 70 is brought into contact with the exposed surface of the second semiconductor layer 230 to obtain a second common electrode electrically connected to the driving backplate 50, such as... Figure 6 and Figure 7 As shown.

[0068] Using the above-described manufacturing method of the present invention, the formed light-emitting device has a vertical structure, thereby allowing the chip size to be smaller than that of a flip chip. Furthermore, because the second common electrode of the formed light-emitting device includes a transparent conductive film 70, it reduces light occupancy, resulting in higher overall light transmittance. Therefore, for the same pixel count (PPI), the light-emitting device with the above structure not only occupies a smaller area but also saves on in-plane metal traces, thus improving the transparency of the display panel. Similarly, for the same transparency, more light-emitting devices with the above structure can be arranged, thereby increasing the PPI of the display panel and improving the display effect.

[0069] For example, the first substrate 30 described above can be a chip epitaxial substrate, such as a sapphire substrate, but is not limited to the above types.

[0070] In some embodiments, the drive backplate 50 includes a transparent substrate 510, a first conductive portion 520, a second conductive portion 540, and a first insulating layer 530. The first conductive portion 520 is disposed on one side of the transparent substrate 510 and is used to contact the second common electrode to achieve electrical connection. The second conductive portion 540 is disposed on the side of the first conductive portion 520 away from the transparent substrate 510 and is used to contact the first electrode 10 to achieve electrical connection. The first insulating layer 530 is disposed between the first conductive portion 520 and the second conductive portion 540.

[0071] For example, electrically connecting the first electrode 10 to the driving backplate 50 includes connecting the first electrode 10 in each light-emitting device to the first conductive part 520 in the driving backplate 50 via the welding part 40.

[0072] In some embodiments, the drive backplate 50 includes a transparent substrate 510, a first conductive portion 520, a second conductive portion 540, and a first insulating layer 530, wherein the first conductive portion 520 is in contact with the second common electrode; the second conductive portion 540 is disposed on the side of the first conductive portion 520 away from the transparent substrate 510, and the second conductive portion 540 is in contact with the first electrode 10; the first insulating layer 530 is disposed between the first conductive portion 520 and the second conductive portion 540.

[0073] Before the step of electrically connecting the second common electrode to the drive backplate 50, the manufacturing method may further include the following steps: forming a second insulating layer 60 on the drive backplate 50 to cover the exposed surfaces of the first electrode 10 and the second conductive portion 540, such as... Figure 6 As shown. The second insulating layer 60 prevents the transparent conductive film 70 from contacting the first electrode 10 and the second conductive part 540, respectively.

[0074] In the above embodiment, a second insulating layer 60 can be formed on the driving backplate 50 to enclose the second conductive portion 540, the first electrode 10, the first semiconductor layer 210, and at least a portion of the active layer 220. The second insulating layer 60 can insulate the transparent conductive film 70 from the active layer 220, thereby avoiding the influence on carrier recombination luminescence caused by the first semiconductor layer 210 and the second semiconductor layer 230 being connected through the transparent conductive film 70. Furthermore, when the active layer 220 is a quantum well, the second insulating layer 60 can also prevent the transparent conductive film 70 from directly contacting the quantum well and affecting its internal electron density distribution.

[0075] In some embodiments, the step of contacting the transparent conductive film 70 with the exposed surface of the second semiconductor layer 230 includes: spraying a solution containing nano-conductive materials onto the drive backplate 50 to cover the exposed surface of the second semiconductor layer 230 with the solution; and drying the solution to form a nano-conductive network of nano-conductive materials. Drying evaporates the solvent, allowing the nano-conductive materials to interconnect and form a nano-conductive network.

[0076] In the above embodiments, the solution can be dried at a temperature of 150°C for 10–30 minutes. These process conditions ensure complete solvent evaporation, avoiding the impact of solvent residue on the conductivity of the nano-conductive network.

[0077] For example, the dispersion of the solution containing the nano-conductive material can be isopropanol, but it is not limited to the above-mentioned types. Those skilled in the art can make reasonable selections based on existing technology.

[0078] It should be understood that the application of the present invention is not limited to the examples above. Those skilled in the art can make improvements or modifications based on the above description, and all such improvements and modifications should fall within the protection scope of the appended claims.

Claims

1. A display panel, characterized in that, It includes a driving backplate and a plurality of light-emitting devices located on one side of the driving backplate, the light-emitting devices including: The first electrode is electrically connected to the driving backplate, and the first electrode in each of the light-emitting devices is independently arranged. The epitaxial structure of each of the light-emitting devices is independently disposed on the side of the first electrode away from the driving back plate, and each of the epitaxial structures includes a first semiconductor layer, an active layer and a second semiconductor layer sequentially stacked along the direction away from the driving back plate. The second common electrode is electrically connected to the driving backplate, and the second common electrode includes a transparent conductive film, which is disposed in contact with the second semiconductor layer in each of the epitaxial structures; The drive backplate includes: Transparent substrate; A first conductive portion is disposed on the side of the transparent substrate close to the light-emitting device, and the first conductive portion is in contact with the second common electrode; The second conductive portion is disposed on the side of the first conductive portion away from the transparent substrate, and the second conductive portion is in contact with the first electrode; A first insulating layer is disposed between the first conductive portion and the second conductive portion; The display panel also includes: A second insulating layer covers the exposed surfaces of the first electrode and the second conductive portion; The transparent conductive film covers the surface of the second insulating layer away from the first electrode and the second conductive part; The second insulating layer covers the surface of the first insulating layer away from the transparent substrate, exposing only the second semiconductor layer. The transparent conductive film encapsulates the second semiconductor layer and the second insulating layer.

2. The display panel as described in claim 1, characterized in that, The first electrode is the anode, and the second common electrode is the cathode.

3. The display panel as described in claim 1 or 2, characterized in that, The side of the second semiconductor layer away from the active layer has a first surface, and the transparent conductive film completely covers the first surface.

4. The display panel as described in claim 1 or 2, characterized in that, The transparent conductive film is a nano-conductive network.

5. A method for manufacturing a display panel, used to manufacture the display panel as described in any one of claims 1 to 4, characterized in that, Includes the following steps: Multiple independent epitaxial structures and a first electrode corresponding to each epitaxial structure are sequentially formed on a first substrate. The epitaxial structure includes a first semiconductor layer, an active layer and a second semiconductor layer sequentially stacked along a direction away from the first electrode. A drive backplane is provided so that the first electrode is electrically connected to the drive backplane; Remove the first substrate to expose a bare surface on the side of the second semiconductor layer away from the active layer. By contacting the transparent conductive film with the exposed surface of the second semiconductor layer, a second common electrode electrically connected to the drive backplane is obtained.

6. The method for manufacturing a display panel as described in claim 5, characterized in that, The driving backplate includes a transparent substrate, a first conductive portion, a second conductive portion, and a first insulating layer. The first conductive portion is in contact with the second common electrode. The second conductive portion is disposed on the side of the first conductive portion away from the transparent substrate and is in contact with the first electrode. The first insulating layer is disposed between the first conductive portion and the second conductive portion. Before the step of electrically connecting the second common electrode on the driving backplate, the manufacturing method further includes the following steps: A second insulating layer is formed on the drive backplate to cover the exposed surfaces of the first electrode and the second conductive part.

7. The method for manufacturing a display panel as described in claim 5 or 6, characterized in that, The step of bringing the transparent conductive film into contact with the exposed surface of the second semiconductor layer includes: A solution containing nano-conductive materials is sprayed onto the drive backplate so that the solution covers the exposed surface of the second semiconductor layer. The solution is dried to allow the nano-conductive material to form a nano-conductive network.

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