Nitride light-emitting diodes

Abstract

This invention discloses a nitride light-emitting diode (LED), comprising a substrate, and a buffer layer, an N-type nitride layer, an emissive layer, an electron blocking layer, and a P-type nitride layer sequentially disposed on the substrate. The key feature is that a P-type carbon atom modulation layer is disposed between the electron blocking layer and the P-type nitride layer, wherein the carbon atom content in the P-type carbon atom modulation layer is higher than that in the emissive layer and the electron blocking layer. By placing a P-type carbon atom modulation layer after the electron blocking layer, the increased C concentration leads to an increase in the effective Fermi level, reducing band distortion at the interface between the emissive layer and the P-type nitride layer, reducing the generation of two-dimensional electron cloud regions, reducing ineffective recombination of electrons and holes, reducing electron overflow, and improving the radiative recombination efficiency of the LED.

Description

Technical Field

[0001] This invention relates to the field of semiconductor manufacturing, and more specifically to a nitride light-emitting diode. Background Technology

[0002] GaN-based LEDs, due to their high luminous efficiency, have been widely used in various light source fields such as backlighting, illumination, automotive lighting, decoration, and various new electronic applications. The luminous efficiency of this material is mainly determined by two factors: first, the radiative recombination efficiency of electrons and holes in the active region, i.e., the internal quantum efficiency; and second, the light extraction efficiency. Regarding improving the internal quantum efficiency, it can be enhanced through quantum well bandgap design, improving crystal quality, increasing the hole injection efficiency of the p-type layer, and improving electron overflow conditions.

[0003] Quantum well bandgap design is a bottleneck factor determining the performance of GaN-based LEDs. Since electron-hole recombination occurs effectively within the active region, improving internal quantum efficiency requires effectively reducing electron spillover without affecting hole injection into the p-type layer. Generally, electron blocking layers, such as AlGaN, are used to raise the energy barrier and mitigate electron spillover. However, these layers not only affect hole injection efficiency but also increase ineffective electron-hole recombination in the GaN-AlGaN interface due to the resulting two-dimensional electron cloud, thus reducing LED luminous efficiency. Therefore, effectively reducing electron spillover and improving electron-hole recombination efficiency has become a key research topic. Summary of the Invention

[0004] To address the aforementioned problems, this invention proposes a nitride light-emitting diode (LED), comprising a substrate, and a buffer layer, an N-type nitride layer, an emissive layer, an electron blocking layer, and a P-type nitride layer sequentially located on the substrate, wherein the emissive layer comprises a well layer and a barrier layer. The LED is characterized in that a P-type carbon atom modulation layer is disposed between the electron blocking layer and the P-type nitride layer, and the carbon atom content in the P-type carbon atom modulation layer is higher than the carbon atom content in the emissive layer and the electron blocking layer.

[0005] Preferably, the carbon atom content in the electron blocking layer is higher than the carbon atom content in the light-emitting layer.

[0006] Preferably, the carbon atom content in the P-type carbon atom modulation layer is 5 × 10⁻⁶. 16 ~1×10 18 Atoms / cm 3 .

[0007] Preferably, the P-type doping concentration in the P-type carbon atom modulation layer is 1×10⁻⁶. 19 Atoms / cm 3 above.

[0008] Preferably, the thickness of the P-type carbon atom modulation layer is 3~70 nm.

[0009] Preferably, the p-type carbon atom modulation layer is Al. a In b Ga 1-a-b N, where a≥0, b≥0, a+b≤1.

[0010] Preferably, the P-type carbon atom modulation layer can be a single-layer structure or a superlattice structure.

[0011] Preferably, the P-type doping content in the P-type carbon atom modulation layer is greater than the carbon atom content.

[0012] Preferably, the bandgap width of the electron blocking layer is greater than the bandgap width of the barrier layer in the light-emitting layer.

[0013] Preferably, the bandgap width of the electron blocking layer is greater than the bandgap width of GaN.

[0014] Preferably, the content of the Al component in the electron blocking layer is higher than the content of the Al component in the barrier layer of the light-emitting layer.

[0015] Preferably, the electron blocking layer is AlcIndGa1-c-dN, where c>0, d≥0, and c+d≤1.

[0016] Preferably, the thickness of the electron blocking layer is 1~50nm.

[0017] Preferably, a second electron blocking layer is further included between the p-type carbon atom modulation layer and the p-type nitride layer, wherein the second electron blocking layer is Al. e In f Ga 1-e-f N, where e > 0, f ≥ 0, and e + f ≤ 1.

[0018] Preferably, the thickness of the second electron blocking layer is 10~80nm.

[0019] This invention provides a P-type carbon atom modulation layer behind the electron blocking layer. As the C concentration increases, the effective Fermi level rises, reducing band distortion at the interface between the light-emitting layer and the P-type nitride layer. This reduces the generation of two-dimensional electron cloud regions, decreases ineffective recombination of electrons and holes, reduces electron overflow, and improves the radiative recombination efficiency of LEDs.

[0020] Other features and advantages of the invention will be set forth in the description which follows, and will be apparent in part from the description, or may be learned by practicing the invention. The objects and other advantages of the invention may be realized and obtained by means of the structures particularly pointed out in the description, claims, and drawings.

[0021] While the invention will be described below in conjunction with some exemplary embodiments and methods of use, those skilled in the art will understand that it is not intended to limit the invention to these embodiments. Rather, it is intended to cover all alternatives, modifications, and equivalents that fall within the spirit and scope of the invention as defined in the appended claims. Attached Figure Description

[0022] The accompanying drawings are provided to further illustrate the invention and form part of the specification. They are used in conjunction with the embodiments of the invention to explain the invention, but do not constitute a limitation thereof. Furthermore, the figures are descriptive outlines and are not drawn to scale.

[0023] Figure 1 This is a schematic diagram of the structure of a light-emitting diode according to an embodiment of the present invention.

[0024] Figure 2 This is a schematic diagram of the structure of the light-emitting layer and electron-blocking layer of the light-emitting diode in an embodiment of the present invention.

[0025] Figure 3 This is a schematic diagram of the energy band structure of a light-emitting diode in the prior art.

[0026] Figure 4 This is a schematic diagram of the energy band of a light-emitting diode in an embodiment of the present invention.

[0027] Explanation of component labels in the diagram:

[0028] 1: Substrate; 2: Buffer layer; 3: N-type nitride layer; 4: Stress buffer layer; 5: Light-emitting layer; 51: Well layer; 52: Barrier layer; 6: Electron blocking layer; 7: P-type carbon content modulation layer; 8: Second electron blocking layer; 9: P-type nitride layer. Detailed Implementation

[0029] The following specific examples illustrate the implementation of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention.

[0030] It should be noted that the illustrations provided in this embodiment are only schematic representations of the basic concept of the present invention. Therefore, the illustrations only show the components related to the present invention and are not drawn according to the actual number, shape and size of the components in the actual implementation. In the actual implementation, the form, quantity and proportion of each component can be arbitrarily changed, and the layout of the components may also be more complex.

[0031] The embodiments of the present invention will be described in detail below with reference to the accompanying drawings and examples, so that the process of how the present invention uses technical means to solve technical problems and achieve technical effects can be fully understood and implemented accordingly.

[0032] Example 1

[0033] Please see Figure 1 The present invention proposes a nitride light-emitting diode, which includes: a substrate 1, a buffer layer 2, an N-type nitride layer 3, a stress relief layer 4, a light-emitting layer 5, an electron blocking layer 6, a P-type carbon atom modulation layer 7, a second electron blocking layer 8, and a P-type nitride layer 9, which are sequentially grown on the substrate 1.

[0034] The substrate 1 can be made of a conductive or insulating material, and the material can be selected from any one of sapphire, aluminum nitride, gallium nitride, silicon, silicon carbide, gallium arsenide, gallium nitride, and single-crystal oxides with lattice constants close to those of nitride semiconductor materials. To improve the light extraction efficiency of the nitride light-emitting diode, it can be patterned to form a series of uneven structures on its surface.

[0035] To reduce the lattice mismatch between substrate 1 and N-type nitride layer 3, a buffer layer 2 is grown between substrate 1 and N-type nitride layer 3. Therefore, the lattice constant of buffer layer 2 is between that of substrate 1 and N-type nitride layer 3, and it can be composed of Al... x In y Ga 1-x-y The material is N, where 0≤x≤1 and 0≤y≤1, and can be an AlN layer, GaN layer, AlGaN layer, AlInGaN layer, InGaN layer, etc. The buffer layer 2 can be formed by MOCVD or PVD. In some embodiments, the buffer layer 2 preferably includes a 25~40nm thick low-temperature GaN nucleation layer, a 0.2~1μm thick high-temperature GaN buffer layer, and a 1~2μm thick two-dimensional GaN layer.

[0036] The N-type nitride layer 3 is located between the buffer layer 2 and the light-emitting layer 5, providing electrons. The N-type nitride layer provides electrons by doping with n-type impurities, such as Si, Ge, Sn, Se, and Te. In this embodiment, Si is preferred as the n-type impurity. The thickness of the N-type nitride layer 3 is 1–4 μm, and the doping concentration is 1 × 10⁻⁶. 17 ~5×10 19 / cm 3 Between these layers, electrons are provided for radiative recombination. The N-type nitride layer 3 can be a monolayer structure or a superlattice structure.

[0037] A stress-relieving layer 4 can be grown between the N-type nitride layer 3 and the light-emitting layer 5 to release the stress generated during the growth of the N-type nitride layer 3. This layer can also adjust the size of the V-shaped pits, thereby improving the luminous brightness of the nitride light-emitting diode. The stress-relieving layer 4 can be a superlattice structure, such as a superlattice structure formed by alternating layers of InGaN and GaN, or it can be a single-layer structure.

[0038] A light-emitting layer 5 is disposed between an N-type nitride layer 3 and a P-type nitride layer 9. The light-emitting layer 5 provides the region for electron-hole recombination and light radiation. Different materials can be selected depending on the emission wavelength. The light-emitting layer 5 can be a periodic structure with a single quantum well or multiple quantum wells. The light-emitting layer 5 includes a well layer 51 and a barrier layer 52, wherein the barrier layer 52 has a larger band gap than the well layer 51. By adjusting the composition ratio of the semiconductor materials in the light-emitting layer 5, it is desired to radiate light of different wavelengths. Figure 2 As shown, the light-emitting layer 5 is formed by alternating layers of well layer 51 and barrier layer 52. In some embodiments, the light-emitting layer 5 has 5 to 15 cycles of InGaN / GaN multiple quantum wells, with the InGaN thickness in each cycle being 2 to 4 nm and the GaN thickness being 3 to 15 nm. In some embodiments, the barrier layer 52 of the quantum wells may be doped with a small amount of Al and is composed of AlGaN.

[0039] To prevent electron overflow, an electron blocking layer 6 is provided after the light-emitting layer 5, such as... Figure 2 As shown. The electron blocking layer 6 can be made of AlcIndGa1-c-dN material, where c > 0, d ≥ 0, and c + d ≤ 1. For example, the electron blocking layer can be composed of one or more materials such as AlN, AlGaN, or AlInGaN. The band gap height of the electron blocking layer 6 is higher than the band gap width of the barrier layer in the light-emitting layer. In some optional embodiments, the band gap height of the electron blocking layer 6 is higher than the band gap width of GaN. In some optional embodiments, the Al content of the electron blocking layer 6 is higher than the Al content of the barrier layer in the light-emitting layer 5. In order to improve the electron blocking layer 6 and reduce the occurrence of electron overflow, the thickness of the electron blocking layer 6 is preferably 1 nm or more; if the thickness of the electron blocking layer 6 is too thick, it will affect the hole injection efficiency, so the thickness of the electron blocking layer 6 is set to less than 50 nm.

[0040] Figure 3 This is a schematic diagram of the energy band structure of a nitride light-emitting diode in the prior art, such as... Figure 3As shown, in the prior art, the electron blocking layer 6, such as the AlGaN layer, raises the energy barrier to reduce electron overflow. However, besides affecting hole injection efficiency, the electron blocking layer 6 also increases the recombination of ineffective electrons and holes at the GaN-AlGaN interface due to the 2DEG (two-dimensional electron cloud), thereby reducing the luminous efficiency of the LED. Therefore, in this embodiment, a P-type carbon atom modulation layer 7 is inserted between the electron blocking layer 6 and the P-type nitride layer 9. The carbon atom content in the P-type carbon atom modulation layer 7 is higher than that in the luminescent layer and the electron blocking layer 6. In some embodiments, the carbon atom content of the electron blocking layer 6 is higher than that in the luminescent layer 5. The increase in carbon impurity concentration in the P-type carbon atom modulation layer 7 can change the original Fermi level of the P-type nitride layer 9. The increased carbon impurity concentration raises the effective Fermi level, reducing band distortion at the interface between the luminescent layer 5 and the P-type nitride layer 9, causing changes in the bands on both sides of the interface, and reducing the region of the two-dimensional electron cloud generated by band distortion between the luminescent layer 5 and the electron blocking layer 6.

[0041] Figure 4 This is a schematic diagram of the energy band structure of the nitride light-emitting diode after adding the P-type carbon atom modulation layer 6 in an embodiment of the present invention, as shown below. Figure 4 As shown, the region of the two-dimensional electron cloud generated by band distortion between the emitting layer 5 and the electron blocking layer 6 is reduced. Since electron-hole recombination is only effective within the emitting layer, the two-dimensional electron cloud increases the probability of electron-hole recombination at that location. However, this recombination is ineffective; therefore, the more electron-hole recombination occurs in the two-dimensional electron cloud region at the interface, the greater the impact on the internal quantum efficiency. In this embodiment of the invention, by adding a p-type carbon atom modulation layer, the region of the two-dimensional electron cloud generated by band distortion between the emitting layer 5 and the p-type nitride layer 9 can be reduced, thereby reducing ineffective electron-hole recombination and improving the luminous efficiency of the nitride light-emitting diode.

[0042] The carbon atom content in the P-type carbon atom modulation layer 7 is 5 × 10⁻⁶. 16 ~1×10 18 Atoms / cm 3 In some embodiments, the carbon atom content in the p-type carbon atom modulation layer 7 is preferably 1 × 10⁻⁶. 17 Atoms / cm 3 The above describes the P-type doping concentration in the P-type carbon atom modulation layer 7, which is 1 × 10⁻⁶. 19 Atoms / cm 3 The preferred value is 5×10. 19 Atoms / cm 3 For example, it could be 1×10 20 ~2×10 20 Atoms / cm 3By increasing the P-type doping concentration of the P-type carbon atom modulation layer 7, the hole injection efficiency can be improved.

[0043] The thickness of the p-type carbon atom modulation layer 7 is 3~70 nm. In some embodiments, the thickness of the p-type carbon atom modulation layer 7 is preferably 10 nm, more preferably 20~50 nm.

[0044] The P-type carbon atom modulation layer 7 is Al a In b Ga 1-a-b N, where a≥0, b≥0, a+b≤1. In some embodiments, the P-type carbon atom modulation layer 7 may be a monolayer structure. In some preferred embodiments, the P-type carbon atom modulation layer 7 may be a superlattice structure, such as AlInGaN / GaN. In some embodiments, preferably, the P-type doping content in the P-type carbon atom modulation layer 7 is greater than the carbon atom content.

[0045] The p-type nitride layer 9 is located above the p-type carbon atom modulation layer 7. The p-type nitride layer 9 provides holes by doping with p-type impurities, which can be Mg, Zn, Ca, Sr, or Ba. In this embodiment, Mg is preferred as the p-type impurity. The p-type nitride layer 9 also includes a p-type ohmic contact layer (not shown in the figure), which is formed by high doping, for example, a doping concentration higher than 1 × 10⁻⁶. 20 Atoms / cm 3 It forms an ohmic contact with the P-type electrode of the nitride light-emitting diode.

[0046] To further reduce electron spillover, the p-type carbon atom modulation layer 7 and the p-type nitride layer 9 may further include a second electron blocking layer 8, the material of which is Al. e In f Ga 1-e-f N, where e > 0, f ≥ 0, and e + f ≤ 1. In some embodiments, the second electron blocking layer 8 is a monolayer structure. In some optional embodiments, the second electron blocking layer 8 is a superlattice structure, such as an AlInGaN / GaN structure. In some embodiments, the carbon atom content of the second electron blocking layer can be higher than that of the p-type carbon atom modulation layer; in some embodiments, the carbon atom content of the second electron blocking layer can also be lower than that of the p-type carbon atom modulation layer. The carbon atom content of the second electron blocking layer can be adjusted by means of growth temperature, 5:3 ratio, growth pressure, carrier gas composition, etc.

[0047] The thickness of the second electron blocking layer 8 ranges from 10 to 80 nm, preferably 12 nm or more. By providing the second electron blocking layer 8, electron overflow can be further reduced, the effective recombination of electrons and holes can be improved, and the luminous efficiency of the nitride light-emitting diode can be enhanced.

[0048] In this embodiment of the invention, by setting a P-type carbon atom modulation layer 7 after the electron blocking layer 6, the carbon atom concentration increases and the effective Fermi level rises, reducing band distortion at the interface between the light-emitting layer 5 and the P-type nitride layer 9, reducing the generation of two-dimensional electron cloud regions, reducing ineffective recombination of electrons and holes, reducing electron overflow, and improving the radiative recombination efficiency of LED.

[0049] Example 2

[0050] The fabrication process of the semiconductor light-emitting element in the above embodiments will be described in detail below.

[0051] First, a substrate 1 is provided. In this embodiment, the substrate 1 is preferably a sapphire substrate. In order to reduce the lattice mismatch between the substrate 1 and the N-type nitride 3, a buffer layer 2 is formed on the substrate 1. In this embodiment, the buffer layer 2 preferably includes a 25~40nm thick low-temperature GaN nucleation layer, a 0.2~1μm thick high-temperature GaN buffer layer, and a 1~2μm thick two-dimensional GaN layer.

[0052] Then, an N-type nitride layer 3 is formed on the buffer layer 2. Preferably, the thickness of the nitride layer 3 is 1~4 μm, and the doping concentration is 1×10⁻⁶. 17 ~5×10 19 / cm 3 Between. The N-type nitride layer 3 can be a single layer or a superlattice structure.

[0053] Next, a stress relief layer 4 is formed on the N-shaped nitride layer 3. In the embodiment, the stress relief layer 4 is preferably a superlattice structure, such as a superlattice structure formed by alternating layers of InGaN and GaN. In some embodiments, the stress relief layer 4 may also be a single-layer structure.

[0054] Next, a light-emitting layer 5 is formed on the stress-relieving layer 4. In this embodiment, the light-emitting layer 5 is preferably a periodic structure of multiple quantum wells, having 5 to 15 periods of InGaN / GaN multiple quantum wells, with the InGaN thickness in each period being 2 to 4 nm and the GaN thickness being 3 to 15 nm. In some embodiments, the barrier layer of the quantum wells may be doped with a small amount of Al, consisting of AlGaN.

[0055] Next, an electron blocking layer 6 is formed on the light-emitting layer 5, which suppresses electron overflow. In this embodiment, the electron blocking layer 6 is preferably composed of one or more materials such as AlN, AlGaN, or AlInGaN. The thickness of the electron blocking layer 6 is preferably 1 nm or more and 50 nm or less.

[0056] Next, a p-type carbon atom modulation layer 7 is formed on the electron blocking layer 6. The carbon atom content of the p-type carbon atom modulation layer 7 is higher than the carbon atom content between the light-emitting layer 5 and the electron blocking layer 6. The p-type carbon atom modulation layer 7 is Al. a In b Ga 1-a-b N, where a≥0, b≥0, a+b≤1, can be a single-layer structure or a superlattice structure. In this embodiment, the carbon atom content in the p-type carbon atom modulation layer 7 is preferably 1×10⁻⁶. 17 Atoms / cm 3 Preferably, the P-type doping concentration in the P-type carbon atom modulation layer 7 is 5 × 10⁻⁶. 19 Atoms / cm 3 For example, it could be 1×10 20 ~2×10 20 Atoms / cm 3 Preferably, the thickness of the P-type carbon atom modulation layer 7 is 10 nm, more preferably 20~50 nm.

[0057] Next, to further reduce electron overflow, a second electron blocking layer 8 is formed on the p-type carbon atom modulation layer 7. The material of the second electron blocking layer 8 is Al. e In f Ga 1-e-f N, where e > 0, f ≥ 0, and e + f ≤ 1. The second electron blocking layer 8 can be a single-layer structure or a superlattice structure, such as an AlInGaN / GaN structure. The thickness of the second electron blocking layer 8 ranges from 10 to 80 nm, preferably 12 nm or more.

[0058] Finally, a p-type nitride layer 9 is formed on the second electron blocking layer 8. In this embodiment, the p-type nitride layer is preferably doped with Mg to provide holes. The p-type nitride layer 9 also includes a p-type ohmic contact layer (not shown in the figure), which is formed by high doping, for example, a doping concentration higher than 1 × 10⁻⁶. 20 Atoms / cm 3 It forms an ohmic contact with the P-type electrode.

[0059] This invention provides a P-type carbon atom modulation layer on an electron blocking layer. The carbon content of the P-type carbon atom modulation layer is higher than that of the light-emitting layer and the electron blocking layer. The increase in carbon concentration will raise the effective Fermi level, reduce band distortion at the interface between the light-emitting layer and the P-type nitride layer, reduce the generation of two-dimensional electron cloud regions, reduce ineffective recombination of electrons and holes, reduce electron overflow, and improve the radiative recombination efficiency of LEDs.

[0060] It should be noted that the above embodiments are only used to illustrate the present invention and are not intended to limit the present invention. Those skilled in the art can make various modifications and changes to the present invention without departing from the spirit and scope of the present invention. Therefore, all equivalent technical solutions also fall within the scope of the present invention, and the patent protection scope of the present invention should be defined by the scope of the claims.

Claims

1. A nitride light-emitting diode, comprising an N-type nitride layer, a light-emitting layer, an electron-blocking layer, and a P-type nitride layer, wherein the light-emitting layer comprises a well layer and a barrier layer, characterized in that: A p-type carbon atom modulation layer is disposed between the electron blocking layer and the p-type nitride layer. The carbon atom content in the p-type carbon atom modulation layer is higher than that in the light-emitting layer and the electron blocking layer. The carbon atom content in the electron blocking layer is higher than that in the light-emitting layer. The p-type carbon atom modulation layer is Al. a In b Ga 1-a-b N, where a≥0, b≥0, a+b≤1, and the carbon atom content in the P-type carbon atom modulation layer is 5×10⁻⁶. 16 ~1×10 18 Atoms / cm 3 .

2. The nitride light-emitting diode according to claim 1, characterized in that: The P-type doping concentration in the P-type carbon atom modulation layer is 1×10⁻⁶. 19 Atoms / cm 3 above.

3. The nitride light-emitting diode according to claim 1, characterized in that: The thickness of the P-type carbon atom modulation layer is 3~70 nm.

4. The nitride light-emitting diode according to claim 1, characterized in that: The P-type carbon atom modulation layer is a single-layer structure or a superlattice structure.

5. The nitride light-emitting diode according to claim 1, characterized in that: In the P-type carbon atom modulation layer, the P-type doping content is greater than the carbon atom content.

6. The nitride light-emitting diode according to claim 1, characterized in that: The bandgap width of the electron blocking layer is greater than the bandgap width of the barrier layer in the light-emitting layer.

7. The nitride light-emitting diode according to claim 6, characterized in that: The bandgap width of the electron blocking layer is greater than that of GaN.

8. The nitride light-emitting diode according to claim 6, characterized in that: The content of Al component in the electron blocking layer is higher than the content of Al component in the barrier layer of the light-emitting layer.

9. The nitride light-emitting diode according to claim 1, characterized in that: The electron blocking layer is Al. c In d Ga 1-c-d N, where c > 0, d ≥ 0, and c + d ≤ 1.

10. The nitride light-emitting diode according to claim 1, characterized in that: The thickness of the electron blocking layer is 1~50nm.

11. The nitride light-emitting diode according to claim 1, characterized in that: A second electron blocking layer, which is Al, is also included between the p-type carbon atom modulation layer and the p-type nitride layer. e In f Ga 1-e-f N, where e > 0, f ≥ 0, and e + f ≤ 1.

12. The nitride light-emitting diode according to claim 11, characterized in that: The thickness of the second electron blocking layer is 10~80nm.

13. A nitride light-emitting diode, characterized in that: It comprises an N-type nitride layer, a light-emitting layer, an electron-blocking layer, a P-type carbon atom modulation layer, a second electron-blocking layer, and a P-type nitride layer, wherein the light-emitting layer includes a well layer and a barrier layer; the carbon atom content increases and then decreases from the light-emitting layer to the second electron-blocking layer, and the P-type carbon atom modulation layer is Al. a In b Ga 1-a-b N, where a≥0, b≥0, a+b≤1.

14. The nitride light-emitting diode according to claim 13, characterized in that: The carbon atom content increases from the light-emitting layer to the P-type carbon atom modulation layer; the carbon atom content decreases from the P-type carbon atom modulation layer to the second electron blocking layer.

15. The nitride light-emitting diode according to claim 14, characterized in that: The carbon atom content in the P-type carbon atom modulation layer is 5 × 10⁻⁶. 16 ~1×10 18 Atoms / cm 3 .

16. The nitride light-emitting diode according to claim 14, characterized in that: The P-type doping concentration in the P-type carbon atom modulation layer is 1×10⁻⁶. 19 Atoms / cm 3 above.

17. The nitride light-emitting diode according to claim 14, characterized in that: The thickness of the P-type carbon atom modulation layer is 3~70 nm.

18. The nitride light-emitting diode according to claim 14, characterized in that: The P-type carbon atom modulation layer is a single-layer structure or a superlattice structure.

19. The nitride light-emitting diode according to claim 14, characterized in that: In the P-type carbon atom modulation layer, the P-type doping content is greater than the carbon atom content.

20. The nitride light-emitting diode according to claim 14, characterized in that: The bandgap width of the electron blocking layer is greater than the bandgap width of the barrier layer in the light-emitting layer.

21. The nitride light-emitting diode according to claim 14, characterized in that: The electron blocking layer is Al. c In d Ga 1-c-d N, where c > 0, d ≥ 0, and c + d ≤ 1.

22. The nitride light-emitting diode according to claim 14, characterized in that: The thickness of the electron blocking layer is 1~50nm.

23. The nitride light-emitting diode according to claim 14, characterized in that: The second electron blocking layer is Al e In f Ga 1-e-f N, where e > 0, f ≥ 0, and e + f ≤ 1.

24. The nitride light-emitting diode according to claim 14, characterized in that: The thickness of the second electron blocking layer is 10~80nm.

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