Filter and manufacturing method, electronic device

Abstract

This disclosure provides a filter and its fabrication method, as well as an electronic device, belonging to the field of microwave technology, and can solve the problem of low Q value of inductors. The filter provided includes: a first substrate and a second substrate disposed opposite to each other, with a dielectric cavity disposed between the first substrate and the second substrate; the filter further includes: at least one inductor, the inductor including a first planar inductor structure disposed on a first surface of the first substrate, a second planar inductor structure disposed on a first surface of the second substrate, and a columnar inductor structure disposed within the dielectric cavity, the first end and the second end of the columnar inductor structure being electrically connected to the first planar inductor structure and the second planar inductor structure, respectively; and at least one capacitor disposed on the first surface of the first substrate, and the capacitor being electrically connected to the inductor.

Description

Technical Field

[0001] This disclosure belongs to the field of microwave technology, specifically relating to a filter and its manufacturing method, and electronic equipment. Background Technology

[0002] Filtering technology can remove unwanted interference signals from the signal to be processed and extract the desired signal, making it an important technique in signal processing. A filter is a crucial component for implementing filtering technology, and it includes two types: active filters and passive filters. Passive filters, also known as LC filters, are filter circuits designed using a combination of inductors, capacitors, and resistors. Different filtering effects can be achieved by adjusting the number and connection method of the inductors and capacitors. Summary of the Invention

[0003] This disclosure aims to provide a filter and its manufacturing method, as well as an electronic device.

[0004] A first aspect of this disclosure provides a filter comprising: a first substrate and a second substrate disposed opposite to each other, wherein a dielectric cavity is disposed between the first substrate and the second substrate; the filter further comprising:

[0005] At least one inductor, the inductor comprising a first planar inductor structure disposed on a first surface of the first substrate, a second planar inductor structure disposed on a first surface of the second substrate, and a columnar inductor structure disposed within the dielectric cavity, wherein the second end and the first end of the columnar inductor structure are electrically connected to the first planar inductor structure and the second planar inductor structure, respectively.

[0006] At least one capacitor is disposed on a first surface of the first substrate and is electrically connected to the inductor.

[0007] A first conductive layer, a dielectric layer, and a second conductive layer are sequentially stacked on the first surface of the first substrate. The first electrode plate of the capacitor is disposed on the first conductive layer, the second electrode plate of the capacitor is disposed on the second conductive layer, and the dielectric of the capacitor is disposed on the dielectric layer.

[0008] The first planar inductor structure is disposed on the second conductive layer;

[0009] A third conductive layer is disposed on the first surface of the second substrate, and the second planar inductor structure is disposed on the third conductive layer.

[0010] Specifically, a first protective layer covers the side of the second conductive layer that faces away from the first substrate.

[0011] A second protective layer is provided on the side of the surface of the third conductive layer that faces away from the second substrate.

[0012] Wherein, a sealing structure is provided around the periphery of the dielectric cavity between the first substrate and the second substrate, and the first substrate, the second substrate and the sealing structure form a closed cavity for the dielectric cavity.

[0013] The sealed cavity is filled with a medium gas.

[0014] The medium gas is air.

[0015] The first substrate has a first inductive through-hole, a second inductive through-hole, and a capacitor through-hole with a through-thickness. A first conductive post, a second conductive post, and a third conductive post are respectively disposed in the first inductive through-hole, the second inductive through-hole, and the capacitor through-hole. The second ends of the first conductive post, the second conductive post, and the third conductive post are respectively electrically connected to a solder ball disposed on the second surface of the first substrate.

[0016] The first end of the first conductive post is electrically connected to the columnar inductor structure corresponding to the first end of the inductor, the first end of the second conductive post is electrically connected to the columnar inductor structure corresponding to the second end of the inductor, and the first end of the third conductive post is electrically connected to the first electrode plate of the capacitor.

[0017] Conductive balls are provided at the first ends of the first conductive post, the second conductive post, and the third conductive post.

[0018] The first substrate is further provided with a first pad, a second pad and a third pad. The first pad is electrically connected to the columnar inductor structure corresponding to the first end of the inductor, the second pad is electrically connected to the columnar inductor structure corresponding to the second end of the inductor, and the third pad is electrically connected to the first electrode plate of the capacitor.

[0019] A second aspect of this disclosure provides a method for manufacturing a filter, comprising:

[0020] A first planar inductor structure and at least one capacitor are fabricated on a first surface of a first substrate;

[0021] A columnar inductor structure is fabricated, and the second end of the columnar inductor structure is electrically connected to the first planar inductor structure.

[0022] A second planar inductor structure is disposed on the first surface of the second substrate;

[0023] The first surface of the first substrate and the first surface of the second substrate are aligned to make the first end of the columnar inductor structure electrically connected to the second planar inductor structure to form at least one inductor, the inductor being electrically connected to the capacitor, and a dielectric cavity is formed between the first substrate and the second substrate.

[0024] The step of fabricating a first planar inductor structure and at least one capacitor on the first surface of the first substrate includes:

[0025] A first conductive layer, a dielectric layer, and a second conductive layer are sequentially formed on the first surface of the first substrate, and the first planar inductor structure is disposed on the second conductive layer; the first electrode plate of the capacitor is disposed on the first conductive layer, and the second electrode plate of the capacitor is disposed on the second conductive layer.

[0026] The step of performing a mortise and tenon process on the first surface of the first substrate and the first surface of the second substrate to electrically connect the first end of the columnar inductor structure to the second planar inductor structure to form at least one inductor, and before forming a dielectric cavity between the first substrate and the second substrate, includes:

[0027] A connecting ball is implanted at the first end of the columnar inductor structure;

[0028] A sealing structure is provided on the first surface of the second substrate and along the periphery of the second substrate;

[0029] The first surface of the first substrate and the first surface of the second substrate are aligned, and the first end of the columnar inductor structure is positioned opposite the second planar inductor structure.

[0030] The first end of the columnar inductor structure is electrically connected to the second planar inductor structure by a reflow soldering process to form at least one inductor; and the sealing structure is sealed to the first surface of the first substrate to form a dielectric cavity between the first substrate and the second substrate.

[0031] The method further includes, before fabricating the first planar inductor structure and at least one capacitor on the first surface of the first substrate:

[0032] A first inductor via, a second inductor via, and a capacitor via are fabricated on the first substrate, extending through its thickness.

[0033] Conductive material is filled into the first inductor via, the second inductor via, and the capacitor via to obtain the first conductive pillar, the second conductive pillar, and the third conductive pillar.

[0034] A third aspect of this disclosure provides a radio frequency circuit, comprising:

[0035] A carrier plate, wherein a conductive line is provided on the first surface of the carrier plate;

[0036] A filter, wherein the port of the filter is electrically connected to the corresponding conductive line; the filter is the filter provided in the embodiments of this disclosure;

[0037] The radio frequency (RF) element has its port electrically connected to the corresponding conductive line, and the RF element is electrically connected to the port of the filter via the conductive line.

[0038] The filter's port is located on the second surface of the first substrate in the filter, and the filter is electrically connected to the corresponding conductive lines on the carrier plate through conductive balls disposed on the second surface of the first substrate.

[0039] The port of the filter is disposed on the first surface of the first substrate of the filter, and the pads disposed on the first surface of the first substrate are electrically connected to the corresponding conductive lines on the carrier board through conductive leads.

[0040] A fourth aspect of this disclosure provides an electronic device that includes a filter, the filter being the filter provided in the embodiments of this disclosure. Attached Figure Description

[0041] Figure 1 A schematic diagram of the structure of a filter provided in an embodiment of this disclosure;

[0042] Figure 2 This is a schematic diagram showing the connection between the filter and the radio frequency component on the packaging substrate in an embodiment of this disclosure;

[0043] Figure 3 A schematic diagram of another filter provided in an embodiment of this disclosure;

[0044] Figure 4 A top view of another waveguide conversion device provided in an embodiment of this disclosure;

[0045] Figure 5 This is a schematic diagram showing the connection between the filter and the radio frequency component on the packaging substrate according to an embodiment of the present disclosure;

[0046] Figure 6 This is a flowchart illustrating a filter fabrication method provided in an embodiment of the present disclosure. Detailed Implementation

[0047] To enable those skilled in the art to better understand the technical solutions of this disclosure, the disclosure will be further described in detail below with reference to the accompanying drawings and specific embodiments.

[0048] Unless otherwise defined, the technical or scientific terms used in this disclosure shall have the ordinary meaning understood by one of ordinary skill in the art to which this disclosure pertains. The terms “first,” “second,” and similar terms used in this disclosure do not indicate any order, quantity, or importance, but are merely used to distinguish different components. Similarly, the terms “an,” “a,” or “the,” and similar terms do not indicate a quantity limitation, but rather indicate the presence of at least one. The terms “including,” “comprising,” or “containing,” and similar terms mean that the element or object preceding the word encompasses the elements or objects listed following the word and their equivalents, without excluding other elements or objects. The terms “connected,” “linked,” or similar terms are not limited to physical or mechanical connections, but can include electrical connections, whether direct or indirect. The terms “upper,” “lower,” “left,” and “right,” etc., are used only to indicate relative positional relationships, and these relative positional relationships may change accordingly when the absolute position of the described objects changes.

[0049] To meet the integration requirements of filters in various application scenarios, three-dimensional structures that penetrate the thickness of the substrate (silicon substrate or glass substrate) can be set in the substrate—through-silicon vias (TSV) or through-glass vias (TGV), thereby improving the integration of the filter.

[0050] Integrated passive filters utilize thin-film or thick-film technology to directly fabricate components such as inductors and capacitors onto a substrate. The inductors include planar inductors and inductors within vias. Planar inductors are located on the substrate surface, while inductors within vias are located within the substrate (through-silicon vias or glass vias). The Q-factor (quality factor) of both planar and via inductors is related to the characteristics of the substrate. Since the substrate has a relatively high dielectric constant and conductivity, it inevitably reduces the Q-factor of the inductor, resulting in higher insertion loss in the passive filter and limiting its application in high-frequency bands.

[0051] This disclosure provides a filter that, by changing the structure of the inductor, avoids the influence of the substrate on the Q value of the inductor and reduces the insertion loss of the passive filter.

[0052] Figure 1 This is a schematic diagram of the structure of a filter provided in an embodiment of this disclosure. Figure 1 As shown, this embodiment of the present disclosure provides a filter, including: a first substrate 1 and a second substrate 2 disposed opposite to each other, and a dielectric cavity 3 disposed between the first substrate 1 and the second substrate 2.

[0053] It should be noted that the first substrate 1 and the second substrate 2 are used for ease of description and are not intended to limit the positions of the first substrate 1 and the second substrate 2.

[0054] In some embodiments, the first substrate 1 and the second substrate 2 include, but are not limited to, any one of glass substrate, silicon substrate, flexible substrate, and interlayer dielectric layer 14 including at least an organic insulating layer. Since integrating the filter onto a glass substrate offers advantages such as small size, light weight, high performance, and low power consumption, the first substrate 1 and the second substrate 2 are preferably glass substrates in the embodiments of this disclosure. The following description uses a glass substrate as an example.

[0055] In this embodiment, the first substrate 1 includes a first surface 11 and a second surface 12, which are two opposing surfaces of the first substrate 1. Layer structures can be fabricated on both the first surface 11 and the second surface 12. The second substrate 2 has a similar structure to the first substrate 1, and has a first surface 21 and a second surface 22. Layer structures can be fabricated on both the first surface 21 and the second surface 22 of the second substrate 2.

[0056] It should be noted that the first surface and the second surface are used for ease of description and are not intended to limit the positions of the first surface and the second surface.

[0057] The filter provided in this disclosure also includes:

[0058] At least one inductor, the inductor including a first planar inductor structure 41 disposed on a first surface 11 of a first substrate 1, a second planar inductor structure 42 disposed on a first surface of a second substrate 2, and a columnar inductor structure 43 disposed in a dielectric cavity 3, the first end (the end near the second substrate) and the second end (the end near the first substrate) of the columnar inductor structure 43 being electrically connected to the first planar inductor structure 41 and the second planar inductor structure 42, respectively.

[0059] At least one capacitor is disposed on the first surface 11 of the first substrate 1 and is electrically connected to an inductor.

[0060] In this embodiment of the disclosure, the first planar inductor structure 41 of both the capacitor and the inductor is disposed on the first surface 11 of the first substrate 1, and the first planar inductor structure 41 of the capacitor and the inductor are electrically connected.

[0061] In this embodiment, the columnar inductor structure 43 can be a columnar structure made of a metallic material, such as, but not limited to, at least one of copper (Cu), aluminum (Al), molybdenum (Mo), and silver (Ag). The height of the columnar inductor structure 43 affects the inductance value. In some embodiments, the height of the columnar inductor structure 43 is 1 μm-500 μm. To ensure effective electrical connection between the columnar inductor structure 43 and the second planar inductor structure 42, solder balls are deposited at the first end of the columnar inductor structure 43.

[0062] In this embodiment, the inductor includes a first planar inductor structure 41, a second planar inductor structure 42, and a columnar inductor structure 43. The first end and the second end of the columnar inductor structure 43 are electrically connected to the first planar inductor structure 41 and the second planar inductor structure 42, respectively, thereby forming an inductor. Since the columnar inductor structure 43 is located within the dielectric cavity 3, the Q-value of the columnar inductor structure 43 is independent of the characteristics (dielectric constant and conductivity) of the first substrate 1 and the second substrate 2. Increasing the Q-value of the columnar inductor structure 43 can reduce the insertion loss of the filter, thereby improving the overall characteristics of the filter.

[0063] In some embodiments, a first conductive layer 13, a dielectric layer 14, and a second conductive layer 15 are sequentially stacked on the first surface 11 of the first substrate 1. The first electrode plate 51 of the capacitor is disposed on the first conductive layer 13, the second electrode plate 52 of the capacitor is disposed on the second conductive layer 15, and the dielectric of the capacitor is disposed on the dielectric layer 14.

[0064] In some embodiments, the capacitor includes a first electrode plate 51 and a second electrode plate 52, with a dielectric material disposed between the first electrode plate 51 and the second electrode plate 52. The first electrode plate 51 is disposed on a first conductive layer 13, the second electrode plate 52 is disposed on a second conductive layer 15, and the dielectric material is disposed on a dielectric layer 14, i.e., a dielectric layer 14 is disposed between the first conductive layer 13 and the second conductive layer 15.

[0065] The materials of the first conductive layer 13 and the second conductive layer 15 include, but are not limited to, at least one of copper (Cu), aluminum (Al), molybdenum (Mo), and silver (Ag). The material of the dielectric layer 14 is an inorganic insulating material. For example, the dielectric layer 14 is an inorganic insulating layer formed of silicon nitride (SiNx), or an inorganic insulating layer formed of silicon oxide (SiO2), or a combination of several stacked films of SiNx inorganic insulating layers and SiO2 inorganic insulating layers.

[0066] In some embodiments, a first conductive layer 13 is disposed on a first surface 11 of a first substrate 1, a dielectric layer 14 is disposed on the surface of the first conductive layer 13 and on the side opposite to the first substrate 1, and a second conductive layer 15 is disposed on the surface of the dielectric layer 14 and on the side opposite to the first substrate 1. The first conductive layer 13 and the second conductive layer 15 can be fabricated using processes such as electroplating and sputtering, and the dielectric layer 14 can be fabricated using processes such as chemical vapor deposition.

[0067] In this embodiment of the present disclosure, the first electrode plate 51, the second electrode plate 52 and the dielectric layer 14 of the capacitor are respectively provided with a first conductive layer 13, a dielectric layer 14 and a second conductive layer 15, which improves the integration of the capacitor and helps to reduce the size of the filter.

[0068] In some embodiments, a first planar inductor structure 41 is disposed on a second conductive layer 15, a third conductive layer 23 is disposed on a first surface of a second substrate 2, and a second planar inductor structure 42 is disposed on the third conductive layer 23.

[0069] In this embodiment of the present disclosure, a third conductive layer 23 is provided on the first surface of the second substrate 2. The third conductive layer 23 can be fabricated by processes such as electroplating and sputtering.

[0070] In this embodiment, the first planar inductor structure 41 of the inductor and the second electrode plate 52 of the capacitor are disposed on the second conductive layer 15, instead of being disposed on two different conductive layers, which simplifies the structure of the filter and reduces manufacturing costs.

[0071] In this embodiment, the filter is provided with multiple cylindrical inductor structures 43. The second end of each cylindrical inductor structure 43 is electrically connected to a first planar inductor structure 41, and the first end of each cylindrical inductor structure 43 is electrically connected to a second planar inductor structure 42. That is, multiple first planar inductor structures 41 and multiple second planar inductor structures 42 can be connected in series using multiple cylindrical inductor structures 43 to obtain an inductor. The first port and the second port of the inductor are respectively electrically connected to the second end of one cylindrical inductor structure 43 in the filter.

[0072] In some embodiments, a first protective layer 16 is covered on the side of the surface of the second conductive layer 15 facing away from the first substrate 1.

[0073] In this embodiment, a first protective layer 16 covers the side of the second conductive layer 15 facing away from the first substrate 1, and a first opening is provided at a position corresponding to the second end of the columnar inductor structure 43. The second end of the columnar inductor structure 43 is electrically connected to the first planar inductor structure 41 at the first opening. The first protective layer 16 covers the surface of the second conductive layer 15 facing away from the first substrate 1, which can prevent the second conductive layer 15 from being oxidized due to exposure.

[0074] The first protective layer 16 is made of an inorganic insulating material. For example, the first protective layer 16 is an inorganic insulating layer formed of silicon nitride (SiNx), or an inorganic insulating layer formed of silicon oxide (SiO2), or a combination of several stacked films of SiNx inorganic insulating layer and SiO2 inorganic insulating layer.

[0075] In some embodiments, a second protective layer 24 is covered on the side of the surface of the third conductive layer 23 facing away from the second substrate 2.

[0076] In this embodiment, a second protective layer 24 covers the surface of the third conductive layer 23 facing away from the second substrate 2, and a second opening is provided at a position corresponding to the second end of the columnar inductor structure 43. The second end of the columnar inductor structure 43 is electrically connected to the second planar inductor structure 42 at the second opening. The second protective layer 24 covers the surface of the third conductive layer 23 facing away from the second substrate 2, which can prevent the third conductive layer 23 from being oxidized due to exposure.

[0077] The material of the second protective layer 24 is an inorganic insulating material. For example, the second protective layer 24 is an inorganic insulating layer formed of silicon nitride (SiNx), or an inorganic insulating layer formed of silicon oxide (SiO2), or a combination of several stacked films of SiNx inorganic insulating layer and SiO2 inorganic insulating layer.

[0078] In some embodiments, a sealing structure is provided around the dielectric cavity 3 between the first substrate 1 and the second substrate 2, and the first substrate 1, the second substrate 2 and the sealing structure make the dielectric cavity 3 form a closed cavity.

[0079] In this embodiment of the present disclosure, a circumferentially closed sealing structure, such as a sealing frame, is formed on the first surface of the second substrate 2. After the first substrate 1 and the second substrate 2 are assembled, the sealing structure, the first substrate 1 and the second substrate 2 seal the medium cavity 3 into a closed cavity.

[0080] In some embodiments, the sealing structure can be manufactured using processes such as coating or screen printing.

[0081] In some embodiments, a dielectric gas is filled within the sealed cavity. The dielectric gas is selected from those with a dielectric constant close to 1 and a conductivity close to 0, such as air. Air has a dielectric constant of 1 and a conductivity close to 0. Compared to the materials of the first substrate 1 and the second substrate 2, the inductance Q value of the columnar inductor structure 43 is significantly improved, thereby enhancing the overall characteristics of the filter.

[0082] In this embodiment of the disclosure, the filter can be electrically connected to other electronic devices by wire bonding or by flip-chip bonding.

[0083] In some embodiments, the first substrate 1 has a first inductive through-hole 17, a second inductive through-hole 18, and a grounding through-hole 19 that penetrate through the thickness. A first conductive post 27, a second conductive post 28, and a third conductive post 29 are respectively disposed in the first inductive through-hole 17, the second inductive through-hole 18, and the grounding through-hole 19. The first ends of the first conductive post 27, the second conductive post 28, and the third conductive post 29 are respectively electrically connected to the solder balls disposed on the second surface 12 of the first substrate 1.

[0084] The second end of the first conductive post 27 is electrically connected to the columnar inductor structure 43 corresponding to the first end of the inductor; the second end of the second conductive post 28 is electrically connected to the columnar inductor structure 43 corresponding to the second end of the inductor; and the second end of the third conductive post 29 is electrically connected to the first electrode plate 51 of the capacitor. Conductive balls 30 are provided at the second ends of the first conductive post 27, the second conductive post 28, and the third conductive post 29.

[0085] The conductive ball 30 can be a solder ball or made of other conductive materials.

[0086] In some embodiments, the first inductive via 17, the second inductive via 18, and the ground via 19 may be obtained on the first substrate 1 by laser-modified etching, not limited to this method. The first conductive pillar 27, the second conductive pillar 28, and the third conductive pillar 29 are obtained by electroplating. Before performing the electroplating process, a seed layer may be generated on the first inductive via 17, the second inductive via 18, and the ground via 19 by magnetron sputtering, and a conductive metal may be electroplated on the seed layer. The material of the seed layer includes, but is not limited to, at least one of copper (Cu), aluminum (Al), molybdenum (Mo), and silver (Ag).

[0087] Figure 2 This is a schematic diagram illustrating the electrical connection between the filter and other electronic devices according to an embodiment of this disclosure. Figure 2 As shown, conductive lines (not shown in the figure) and pads (not shown in the figure) are provided on the packaging substrate 8. The position and number of pads correspond to the number of pads for the filter and electronic components.

[0088] Conductive balls 30 are provided at the first ends of the first conductive post 27, the second conductive post 28, and the third conductive post 29 of the filter, respectively, corresponding to the positions of the pads on the package substrate 8, and then electrical connections are achieved by flip-chip bonding. Other electronic components, such as the first RF component 91 and the second RF component 92, can also be electrically connected to the pads on the package substrate 8 by flip-chip bonding.

[0089] The embodiments disclosed herein use the first conductive post 27, the second conductive post 28, and the third conductive post 29 as the three ports of the filter to achieve connection with other electronic devices, thereby improving the integration of the filter with other electronic devices.

[0090] In some embodiments, a first pad 81, a second pad 82, and a third pad (not shown in the figure) are further provided on the first surface 11 of the first substrate 1. The first pad 81 is electrically connected to the columnar inductor structure 43 corresponding to the first end of the inductor through a wire disposed in the second conductive layer 41. The second pad 82 is electrically connected to the columnar inductor structure 43 corresponding to the second end of the inductor through a wire disposed in the second conductive layer 41. The third pad is electrically connected to the first electrode plate 51 of the capacitor.

[0091] like Figure 3 and Figure 5 As shown, when the filter is electrically connected to other electronic devices by wire bonding, filter pads are provided on the first surface 11 of the first substrate 1. The filter pads are arranged around the filter, and the number of filter pads can be arbitrarily set according to actual needs. This disclosure does not limit this.

[0092] The filter includes a first pad 81, a second pad 82 and a third pad (not shown in the figure). The first pad 81 is electrically connected to the columnar inductor structure 43 corresponding to the first end of the inductor, the second pad 82 is electrically connected to the columnar inductor structure 43 corresponding to the second end of the inductor, and the third pad is electrically connected to the first electrode plate 51 of the capacitor.

[0093] The first pad 81, the second pad 82, and the third pad of the filter are electrically connected to the corresponding pads on the package carrier board 8. The first RF component 91 and the second RF component 92 are electrically connected to the pads on the package carrier board 8 by flip-chip bonding. They are also electrically connected to the corresponding ports of the first RF component 91 and the second RF component 92 by wiring.

[0094] This disclosure also provides a method for manufacturing a filter, such as... Figure 6 As shown, the filter fabrication method includes:

[0095] Step S601: A first planar inductor structure 41 and at least one capacitor are formed on the first surface 11 of the first substrate 1.

[0096] The first substrate 1 includes, but is not limited to, any one of glass substrate, silicon substrate, flexible substrate, and interlayer dielectric layer 14 including at least an organic insulating layer.

[0097] In some embodiments, the first surface 11 of the first substrate 1 obtains a first conductive layer 13 by electroplating or magnetron sputtering, followed by resist coating, exposure, development, and then copper wet etching. After etching, the resist is removed to complete the patterning of the first conductive layer 13, and a first electrode plate 51 and a first planar inductor structure 41 of a capacitor are formed on the first conductive layer 13. The first electrode plate 51 and the first planar inductor structure 41 can be electrically connected as needed.

[0098] The material of the first conductive layer 13 includes, but is not limited to, at least one of copper (Cu), aluminum (Al), molybdenum (Mo), and silver (Ag). The thickness of the first conductive layer 13 can be set as needed; for example, the thickness of the first conductive layer 13 is 5-10 nm.

[0099] A dielectric layer 14 is fabricated on the side of the first conductive layer 13 facing away from the first substrate 1 using a chemical vapor deposition process. The dielectric layer 14 is an inorganic insulating material. For example, the dielectric layer 14 is an inorganic insulating layer formed of silicon nitride (SiNx), or an inorganic insulating layer formed of silicon oxide (SiO2), or a combination of several stacked films of SiNx inorganic insulating layers and SiO2 inorganic insulating layers.

[0100] In this embodiment of the present disclosure, the dielectric layer 14 covers the first conductive layer 13 to prevent the first conductive layer 13 from being oxidized due to exposure during subsequent processes.

[0101] A second conductive layer 15 is obtained on the side of the dielectric layer 14 facing away from the first substrate 1 by electroplating or magnetron sputtering. Then, the layer is coated with resist, exposed, developed, and then copper wet etching is performed. After etching, the resist is removed to complete the patterning of the second conductive layer 15. The second electrode plate 52 of the capacitor and the second planar inductor structure 42 of the inductor are formed on the second conductive layer 15.

[0102] The material of the second conductive layer 15 includes, but is not limited to, at least one of copper (Cu), aluminum (Al), molybdenum (Mo), and silver (Ag). The thickness of the second conductive layer 15 can be set as needed; for example, the thickness of the second conductive layer 15 is 5-10 nm.

[0103] In some embodiments, the method of fabricating the filter further includes fabricating a first protective layer 16, which covers the second conductive layer 15 to prevent the second conductive layer 15 from being oxidized due to exposure. The material of the first protective layer 16 may be at least one of silicon nitride and silicon oxide. The first protective layer 16 may also cover the exposed surface of the dielectric layer 14.

[0104] Step S602: Fabricate a columnar inductor structure 43, and electrically connect the second end of the columnar inductor structure 43 to the first planar inductor structure 41.

[0105] A columnar inductor structure 43 is formed on the first surface 11 of the first substrate 1 by electroplating, and the second end of the columnar inductor structure 43 is connected to the first planar inductor structure 41. For example, a metal layer is obtained by electroplating on the side of the first protective layer 16 away from the first substrate 1, and then by applying adhesive, exposure, development, and etching. After etching, the adhesive is removed to obtain the columnar inductor structure 43.

[0106] In some embodiments, in order to improve the electrical connection between the columnar inductor structure 43 and the second planar inductor structure 42, a connecting ball, such as a solder ball, is provided at the first end of the columnar inductor structure 43 to facilitate the electrical connection between the columnar inductor structure 43 and the second planar inductor structure 42 during subsequent assembly processes.

[0107] In step S603, a second planar inductor structure 42 is provided on the first surface of the second substrate 2.

[0108] The second substrate 2 includes, but is not limited to, any one of glass substrate, silicon substrate, flexible substrate, and interlayer dielectric layer 14 including at least an organic insulating layer.

[0109] In some embodiments, the first surface of the second substrate 2 is provided with a third conductive layer 23 by electroplating or magnetron sputtering, and then coated with resist, exposed, developed, followed by copper wet etching. After etching, the resist is removed to complete the patterning of the third conductive layer 23, and a second planar inductor structure 42 is formed on the third conductive layer 23.

[0110] The material of the third conductive layer 23 includes, but is not limited to, at least one of copper (Cu), aluminum (Al), molybdenum (Mo), and silver (Ag). The thickness of the third conductive layer 23 can be set as needed; for example, the thickness of the third conductive layer 23 is 5-10 nm.

[0111] In some embodiments, a second protective layer 24 is provided on the side of the surface of the third conductive layer 23 facing away from the second substrate 2. The material of the second protective layer 24 may be at least one of silicon nitride and silicon oxide. The second protective layer 24 covers the third conductive layer 23 to prevent the third conductive layer 23 from being oxidized due to exposure.

[0112] Step S604: The first surface 11 of the first substrate 1 and the first surface of the second substrate 2 are aligned to make the first end of the columnar inductor structure 43 electrically connected to the second planar inductor structure 42 to form at least one inductor, and the inductor is electrically connected to the capacitor; and a dielectric cavity 3 is formed between the first substrate 1 and the second substrate 2.

[0113] In some embodiments, before aligning the first surface 11 of the first substrate 1 and the first surface of the second substrate 2 to electrically connect the first end of the columnar inductor structure 43 to the second planar inductor structure 42 to form at least one inductor, and before forming the dielectric cavity 3 between the first substrate 1 and the second substrate 2, the process includes:

[0114] A connecting ball is implanted at the first end of the columnar inductor structure 43; a sealing structure is provided on the first surface of the second substrate 2 and along the periphery of the second substrate 2; the first surface 11 of the first substrate 1 and the first surface of the second substrate 2 are aligned, and the first end of the columnar inductor structure 43 is positioned opposite to the second planar inductor structure 42; the first end of the columnar inductor structure 43 is electrically connected to the second planar inductor structure 42 by a reflow soldering process to form at least one inductor; and the sealing structure is sealed to the first surface 11 of the first substrate 1 to form a dielectric cavity 3 between the first substrate 1 and the second substrate 2.

[0115] In some embodiments, before the first planar inductor structure 41 and at least one capacitor are formed on the first surface 11 of the first substrate 1, the method further includes:

[0116] A first inductive via 17, a second inductive via 18, and a ground via 19 are formed on the first substrate 1, extending through its thickness. Conductive material is filled into the first inductive via 17, the second inductive via 18, and the ground via 19 to obtain a first conductive post 27, a second conductive post 28, and a third conductive post 29.

[0117] In some embodiments, the first inductive via 17, the second inductive via 18, and the grounding via 19 can be fabricated on the first substrate 1 using wet etching, dry etching, or laser drilling methods. When the first substrate 1 is a glass substrate, a laser can be used to strike the surface of the first substrate 1 with a laser beam incident perpendicularly to obtain the first inductive via 17, the second inductive via 18, and the grounding via 19 on the first substrate 1. Specifically, when the laser beam interacts with the first substrate 1, the high energy of the laser photons ionizes the atoms in the first substrate 1 and ejects them from the glass surface. As time increases, the hole gradually deepens until it penetrates the entire first substrate 1, thus forming multiple vias. Generally, laser wavelengths such as 532nm, 355nm, 266nm, 248nm, and 197nm can be selected, and laser pulse widths such as 1-100fs, 1-100ps, and 1-100ns can be selected. The type of laser can be a continuous laser, a pulsed laser, etc.

[0118] A seed layer is formed on the inner walls of the first inductor via 17, the second inductor via 18, and the ground via 19 using magnetron sputtering. The material of the seed layer includes, but is not limited to, at least one of copper (Cu), aluminum (Al), molybdenum (Mo), and silver (Ag). In the following description, copper is used as an example material for the seed layer.

[0119] In some embodiments, to increase the adhesion between the seed layer and the first substrate 1, an auxiliary metal film can be formed in the hole before the seed layer is deposited, by means including but not limited to magnetron sputtering. The material of the auxiliary metal film includes, but is not limited to, at least one of nickel (Ni), molybdenum (Mo) alloy, and titanium (Ti) alloy.

[0120] After a seed layer is formed in the first inductor via 17, the second inductor via 18, and the ground via 19, copper is filled in the first inductor via 17, the second inductor via 18, and the ground via 19 by means of Cu electroplating or Cu core solder ball filling. For example, the first substrate 1 is placed on an electroplating machine carrier, an electric pad is pressed on, and it is placed in a hole-filling electroplating tank (using a special hole-filling electrolyte). Current is applied, and the electroplating solution is kept flowing rapidly on the surface of the substrate. The cations in the electroplating solution on the inner walls of the first inductive through-hole 17, the second inductive through-hole 18, and the grounding through-hole 19 gain electrons and become atoms, which are deposited on the inner walls. With a special hole-filling electrolyte with a special ratio, it is possible to deposit metallic copper at high speed (deposition rate 0.5-3 μm / min) mainly in the first inductive through-hole 17, the second inductive through-hole 18, and the grounding through-hole 19. On the upper and lower surfaces of the first substrate 1, which are flat areas, the deposition rate of metallic copper on these two surfaces is extremely low (0.005-0.05 μm / min). As time goes on, the copper metal on the inner walls of the first inductor through-hole 17, the second inductor through-hole 18, and the grounding through-hole 19 gradually thickens, and may even completely or partially fill the first inductor through-hole 17, the second inductor through-hole 18, and the grounding through-hole 19, that is, forming the corresponding first conductive post 27, the second conductive post 28, and the third conductive post 29.

[0121] In some embodiments, the copper filling in the first inductor via 17, the second inductor via 18, and the ground via 19 only fills the sidewalls and is not completely filled. The thickness of the copper on the inner sidewalls of the first inductor via 17, the second inductor via 18, and the ground via 19 is greater than the skin depth, thereby reducing process time and manufacturing costs.

[0122] In some embodiments, after the first substrate 1 and the second substrate 2 are assembled, the filter is heated to fully cure the sealant, thereby forming a closed cavity 3 of the medium cavity and obtaining a good sealing effect.

[0123] To better understand the filters and manufacturing methods provided in this disclosure, the following detailed explanation will use filter manufacturing as an example.

[0124] Methods for making filters include:

[0125] Step S701: Obtain a first substrate 1, fabricate a first inductor via 17, a second inductor via 18 and a ground via 19 on the first substrate 1, and fill the first inductor via 17, the second inductor via 18 and the ground via 19 with copper to obtain a first conductive post 27, a second conductive post 28 and a third conductive post 29.

[0126] A first inductive via 17, a second inductive via 18, and a ground via 19 penetrating the thickness of the first substrate 1 are obtained on the first substrate 1 by laser modification etching process. Then, a seed layer is obtained on the sidewalls of the first inductive via 17, the second inductive via 18, and the ground via 19 by magnetron sputtering process. Finally, the first inductive via 17, the second inductive via 18, and the ground via 19 are filled by electroplating process to obtain a first conductive post 27, a second conductive post 28, and a third conductive post 29.

[0127] In step S702, a first conductive layer 13 is formed on the first surface 11 of the first substrate 1, and a first electrode plate 51 of the capacitor is obtained on the first conductive layer 13.

[0128] A copper layer is formed on the first surface 11 of the first substrate 1 by electroplating or magnetron sputtering. Then, the substrate is coated with adhesive, exposed, developed, and then etched. After etching, the adhesive is removed to complete the patterning of the first conductive layer 13. The first electrode plate 51 of the capacitor and the first planar inductor structure 41 of the inductor are formed in the first conductive layer 13.

[0129] Step S703: Fabricate the dielectric layer.

[0130] A dielectric layer is fabricated on the side of the first conductive layer 13 facing away from the first substrate 1 using a chemical vapor deposition process. The dielectric layer can serve as the dielectric of a capacitor.

[0131] In some embodiments, the dielectric layer 14 covers not only the first conductive layer 13, but also the first substantially exposed portion.

[0132] Step S704: Fabricate the second conductive layer 15.

[0133] A second conductive layer 15 is formed on the side of the dielectric layer facing away from the first substrate 1, and a second electrode plate 52 of a capacitor and a first planar inductor structure 41 of an inductor are obtained in the second conductive layer 15.

[0134] A copper layer is formed on the first surface 11 of the first substrate 1 by electroplating or magnetron sputtering. Then, the substrate is coated with adhesive, exposed, developed, and then etched. After etching, the adhesive is removed to complete the patterning of the second conductive layer 15. The first electrode plate 51 of the capacitor and the first planar inductor structure 41 of the inductor are formed in the second conductive layer 15.

[0135] Step S705: Create the first protective layer 16.

[0136] A first protective layer 16 is formed on the exposed surfaces of the second conductive layer 15 and the dielectric layer 14 using a chemical vapor deposition process. The material of the first protective layer 16 is an inorganic insulating material. For example, the first protective layer 16 is an inorganic insulating layer formed of silicon nitride (SiNx), or an inorganic insulating layer formed of silicon oxide (SiO2), or a combination of several stacked films of SiNx inorganic insulating layer and SiO2 inorganic insulating layer.

[0137] Step S706: Fabricate columnar inductor structure 43.

[0138] The columnar inductor structure 43 is fabricated by electroplating, and the first end of the columnar inductor structure 43 is electrically connected to the first planar inductor structure 41 in the second conductive layer 15.

[0139] To ensure electrical connection between the columnar inductor structure 43 and the second planar inductor structure 42, a solder ball is placed at the first end of the columnar inductor structure 43.

[0140] It should be noted that in step S705, the first protective layer 16 covers the exposed portions of the second conductive layer 15 and the dielectric layer 14, but a window is opened at the corresponding position of the columnar inductor structure 43 for electrical connection between the second end of the columnar inductor structure 43 and the first planar inductor structure 41.

[0141] In step S707, conductive balls 30 are implanted on the second surface 12 of the first substrate 1, and on the first conductive pillar 27, the second conductive pillar 28 and the third conductive pillar 29.

[0142] In some embodiments, the first conductive post 27, the second conductive post 28, and the third conductive post 29 can serve as the input terminal, the output terminal, and the ground terminal of the filter, respectively.

[0143] Step S708: A third conductive layer 23 is fabricated on the second substrate 2.

[0144] A copper layer is fabricated on the second substrate 2 by electroplating or magnetron sputtering. Then, the substrate is coated with adhesive, exposed, developed, and then etched. After etching, the adhesive is removed to complete the patterning of the third conductive layer 23 and form the second planar inductor structure 42 within the third conductive layer 23.

[0145] Step S709: Prepare a second protective layer 24 on the side of the surface of the third conductive layer 23 facing away from the second substrate 2.

[0146] A second protective layer 24 is fabricated on the exposed portion of the first surface of the third conductive layer 23 and the second substrate 2 using a chemical vapor deposition process. The material of the second protective layer 24 is an inorganic insulating material. For example, the second protective layer 24 is an inorganic insulating layer formed of silicon nitride (SiNx), or an inorganic insulating layer formed of silicon oxide (SiO2), or a combination of several stacked films of SiNx inorganic insulating layer and SiO2 inorganic insulating layer.

[0147] Step S710: A closed sealing structure is provided on the first surface and at the periphery of the second substrate 2.

[0148] A sealing structure is created on the first surface of the second substrate 2 and at its edge using sealant through processes such as coating and screen printing. When the first substrate 1 and the second substrate 2 are aligned, the height of the sealing structure is such that it can seal the medium space into a closed space.

[0149] Step S711: Perform a cell assembly process on the first substrate 1 and the second substrate 2.

[0150] In step S711, the first surface 11 of the first substrate 1 and the first surface of the second substrate 2 are brought together, and the first end of the columnar inductor structure 43 is electrically connected to the second planar inductor structure 42 to form at least one inductor. At the same time, a dielectric cavity 3 is formed between the first substrate 1 and the second substrate 2.

[0151] In step S711, after the first end of the columnar inductor structure 43 is electrically connected to the second planar inductor structure 42 by reflow soldering, the sealant is cured by increasing the temperature, so that the dielectric cavity 3 becomes a sealed cavity.

[0152] It should be noted that steps S701-S707 and steps S708-S710 can be performed simultaneously, or steps S708-S710 can be executed first, followed by steps S701-S707.

[0153] In the filter fabrication method provided in this embodiment, the inductor includes a first planar inductor structure 41, a second planar inductor structure 42, and a columnar inductor structure 43. The first end and the second end of the columnar inductor structure 43 are electrically connected to the first planar inductor structure 41 and the second planar inductor structure 42, respectively, thereby forming an inductor. Since the columnar inductor structure 43 is located within the dielectric cavity 3, the inductance Q value of the columnar inductor structure 43 is independent of the characteristics (dielectric constant and conductivity) of the first substrate 1 and the second substrate 2. This increases the inductance Q value of the columnar inductor structure 43, which can reduce the insertion loss of the filter and thus improve the overall characteristics of the filter.

[0154] like Figure 2As shown, this disclosure also provides a radio frequency circuit, which includes a carrier board 8, and a conductive line (not shown) is disposed on the first surface of the carrier board 8.

[0155] Filter 10, the port of filter 10 is electrically connected to the corresponding conductive line; the filter is the filter provided in the embodiment of this disclosure.

[0156] Radio frequency (RF) components have their ports electrically connected to corresponding conductive lines, and these RF components are electrically connected to the ports of filters via conductive lines.

[0157] The carrier board 8 can be a circuit board or other structural component with load-bearing and electrical connection functions. This disclosure does not limit the shape, size, or material of the carrier board 8.

[0158] In some embodiments, the radio frequency (RF) element includes a first RF element 91 and a second RF element 92, wherein the first RF element 91 and the second RF element 92 may be the same RF element or different RF elements. The RF element includes RF ports for signal input and output. The number of RF ports is determined according to the function of the RF element, and this disclosure does not limit this.

[0159] In some embodiments, the port of the filter 10 is disposed on the second surface of the first substrate 1 in the filter, and the filter 10 is electrically connected to the corresponding conductive lines on the carrier plate 8 through conductive balls 30 disposed on the second surface of the first substrate 1. For example, the filter 10 and the carrier plate 8 are electrically connected to the corresponding conductive lines on the carrier plate 8 by flip-chip bonding.

[0160] In some embodiments, such as Figure 1 and Figure 2 As shown, the ports of filter 10 include a first port, a second port, and a third port. The first port corresponds to the first conductive post 27, that is, the first conductive post 27 serves as the first port of filter 10. The second port corresponds to the second conductive post 28, that is, the second conductive post 28 serves as the second port of filter 10. The third port corresponds to the third conductive post 29, that is, the third conductive post 29 serves as the third port of filter 10.

[0161] In some embodiments, the port of the filter 10 is disposed on the first surface of the first substrate 1 in the filter 10, and the pads disposed on the first surface of the first substrate 1 are electrically connected to the corresponding conductive lines on the carrier board through conductive leads.

[0162] like Figure 3 and Figure 5As shown, a first pad 81 and a second pad 82 are disposed on the first surface of the first substrate 1 in the filter 10. The first pad 81 and the second pad 82 are disposed outside the dielectric cavity 3. The first pad 81 and the second pad 82 correspond to two ports of the filter 10. The first pad 81 is electrically connected to the conductive lines on the carrier plate 8 via a first lead, and the second pad 82 is electrically connected to the conductive lines on the carrier plate 8 via a second lead.

[0163] The radio frequency circuit provided in this embodiment uses a columnar inductor structure to electrically connect a first planar inductor structure and a second planar inductor structure. The columnar inductor structure is located in a dielectric cavity, so that the inductance Q value of the columnar inductor structure is independent of the characteristics of the first substrate and the second substrate. This can improve the inductance Q value of the columnar inductor structure, thereby reducing the insertion loss of the filter and improving the overall characteristics of the radio frequency circuit.

[0164] This disclosure also provides an electronic device, including a filter, wherein the filter is the filter provided in this disclosure.

[0165] The electronic device can be a mobile phone, tablet computer, smartwatch, fitness tracker, laptop computer, etc. The implementation principle and technical effects of this electronic device can be found in the above discussion of the implementation principle and technical effects of the filter, and will not be repeated here.

[0166] It should be noted that, in this document, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Unless otherwise specified, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes that element.

[0167] It is understood that the above embodiments are merely exemplary embodiments used to illustrate the principles of this disclosure, and this disclosure is not limited thereto. For those skilled in the art, various modifications and improvements can be made without departing from the spirit and substance of this disclosure, and these modifications and improvements are also considered to be within the scope of protection of this disclosure.

Claims

1. A filter comprising: A dielectric cavity is provided between a first substrate and a second substrate disposed opposite to each other. The filter also includes: At least one inductor, the inductor comprising a first planar inductor structure disposed on a first surface of the first substrate, a second planar inductor structure disposed on a first surface of the second substrate, and a columnar inductor structure disposed within the dielectric cavity, wherein the second end and the first end of the columnar inductor structure are electrically connected to the first planar inductor structure and the second planar inductor structure, respectively. At least one capacitor is disposed on a first surface of the first substrate and is electrically connected to the inductor; A first conductive layer, a dielectric layer, and a second conductive layer are sequentially stacked on the first surface of the first substrate. The first electrode plate of the capacitor is disposed on the first conductive layer, the second electrode plate of the capacitor is disposed on the second conductive layer, and the dielectric of the capacitor is disposed on the dielectric layer. The first planar inductor structure is disposed on the second conductive layer; A first protective layer is covered on the side of the second conductive layer away from the first substrate. A first opening is provided at the position of the first protective layer corresponding to the columnar inductor structure. The second end of the columnar inductor structure is electrically connected to the first planar inductor structure at the first opening.

2. The filter according to claim 1, wherein, A third conductive layer is disposed on the first surface of the second substrate, and the second planar inductor structure is disposed on the third conductive layer.

3. The filter of claim 2, wherein, A second protective layer is applied to the side of the third conductive layer facing away from the second substrate.

4. The filter of any one of claims 1-3, wherein, A sealing structure is provided around the dielectric cavity between the first substrate and the second substrate, and the first substrate, the second substrate and the sealing structure form a closed cavity for the dielectric cavity.

5. The filter of claim 4, wherein, The enclosed cavity is filled with a medium gas.

6. The filter of claim 5, wherein, The medium gas is air.

7. The filter of claim 1, wherein, The first substrate has a first inductive via, a second inductive via, and a capacitor via that penetrate through the thickness. A first conductive post, a second conductive post, and a third conductive post are respectively disposed in the first inductive via, the second inductive via, and the capacitor via. The second ends of the first conductive post, the second conductive post, and the third conductive post are respectively electrically connected to a solder ball disposed on the second surface of the first substrate. The first end of the first conductive post is electrically connected to the columnar inductor structure corresponding to the first end of the inductor, the first end of the second conductive post is electrically connected to the columnar inductor structure corresponding to the second end of the inductor, and the first end of the third conductive post is electrically connected to the first electrode plate of the capacitor. Conductive balls are provided at the second ends of the first conductive post, the second conductive post, and the third conductive post.

8. The filter according to claim 1, wherein, A first pad, a second pad, and a third pad are also provided on the first surface of the first substrate. The first pad is electrically connected to the columnar inductor structure corresponding to the first end of the inductor, the second pad is electrically connected to the columnar inductor structure corresponding to the second end of the inductor, and the third pad is electrically connected to the first electrode plate of the capacitor.

9. A method for manufacturing a filter, comprising: Fabricating a first planar inductor structure and at least one capacitor on a first surface of a first substrate includes: sequentially fabricating a first conductive layer, a dielectric layer, and a second conductive layer on the first surface of the first substrate, with the first planar inductor structure disposed on the second conductive layer; a first electrode plate of the capacitor disposed on the first conductive layer, and a second electrode plate of the capacitor disposed on the second conductive layer; fabricating a first protective layer on the exposed surfaces of the second conductive layer and the dielectric layer; and opening a window in the first protective layer at a position corresponding to the columnar inductor structure for electrically connecting the second end of the columnar inductor structure to the first planar inductor structure. A columnar inductor structure is fabricated, and the second end of the columnar inductor structure is electrically connected to the first planar inductor structure. A second planar inductor structure is disposed on the first surface of the second substrate; The first surface of the first substrate and the first surface of the second substrate are aligned to make the first end of the columnar inductor structure electrically connected to the second planar inductor structure to form at least one inductor, the inductor being electrically connected to the capacitor, and a dielectric cavity is formed between the first substrate and the second substrate.

10. The method according to claim 9, wherein, The step of performing a mortise and tenon process on the first surface of the first substrate and the first surface of the second substrate, so that the first end of the columnar inductor structure is electrically connected to the second planar inductor structure to form at least one inductor, and before forming a dielectric cavity between the first substrate and the second substrate, includes: A connecting ball is implanted at the first end of the columnar inductor structure; A sealing structure is provided on the first surface of the second substrate and along the periphery of the second substrate; The first surface of the first substrate and the first surface of the second substrate are aligned, and the first end of the columnar inductor structure is positioned opposite the second planar inductor structure. The first end of the columnar inductor structure is electrically connected to the second planar inductor structure by a reflow soldering process to form at least one inductor; and the sealing structure is sealed to the first surface of the first substrate to form a dielectric cavity between the first substrate and the second substrate.

11. The method according to claim 9, wherein, Before fabricating the first planar inductor structure and at least one capacitor on the first surface of the first substrate, the method further includes: A first inductor via, a second inductor via, and a capacitor via are fabricated on the first substrate, extending through its thickness. Conductive material is filled into the first inductor via, the second inductor via, and the capacitor via to obtain the first conductive pillar, the second conductive pillar, and the third conductive pillar.

12. A radio frequency circuit, comprising: A carrier plate, wherein a conductive line is provided on the first surface of the carrier plate; A filter, wherein the port of the filter is electrically connected to the corresponding conductive line; The filter is the filter described in any one of claims 1-8; The radio frequency (RF) element has its port electrically connected to the corresponding conductive line, and the RF element is electrically connected to the port of the filter via the conductive line.

13. The radio frequency circuit according to claim 12, wherein, The port of the filter is disposed on the second surface of the first substrate in the filter, and the filter is electrically connected to the corresponding conductive line on the carrier plate through a conductive ball disposed on the second surface of the first substrate.

14. The radio frequency circuit according to claim 12, wherein, The port of the filter is disposed on the first surface of the first substrate in the filter, and the pads disposed on the first surface of the first substrate are electrically connected to the corresponding conductive lines on the carrier board through conductive leads.

15. An electronic device comprising a filter, said filter being the filter according to any one of claims 1-8.

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