Display panel

Abstract

The embodiment of the application discloses a display panel, which forms an inorganic layer on a driving structure layer and sets a recess on the inorganic layer. An anode is arranged on the inorganic layer and covers the recess; a limited port of a pixel definition layer is exposed to the anode. A light-emitting layer and a cathode are sequentially arranged on the anode and correspondingly cover the recess. The side surface of the recess and the plane where the inorganic layer is located form a first included angle, the first included angle is less than 90 degrees, the sidewall of the limited port and the plane where the pixel definition layer is located form a second included angle, the second included angle is less than 90 degrees, and the second included angle is less than the first included angle. By setting the recess in the inorganic layer, the anode has a concave-convex structure above the film layer. When light radiates to the concave-convex structure, the propagation path of the light changes, the light waveguide effect is reduced, and the light efficiency of the panel is improved.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of display, in particular to a display panel. BACKGROUND

[0002] Organic Light-emitting diodes (OLED) has attracted the attention of many display manufacturers in the world due to its self-emitting, wide operating temperature range, fast response speed, wide viewing angle, high luminous efficiency, flexible substrate, low driving voltage and low energy consumption. With the continuous development of science and technology, the production technology of display panel is becoming more and more mature, and the market requires higher power consumption and stability of the panel.

[0003] In the research and practice process of the prior art, the inventors of the present application found that first, OLED devices are easily affected by water and oxygen, which reduces the service life of OLED devices; second, only a small part of light of the OLED panel can be radiated into the air and observed by the human eye, and most of the light is limited in the interior of the OLED panel in the form of substrate mode, waveguide mode, surface plasmon mode and material absorption, which cannot be utilized, resulting in low light efficiency of the OLED panel. SUMMARY

[0004] The embodiments of the present application provide a display panel, which can improve the service life and light efficiency.

[0005] The embodiments of the present application provide a display panel, which comprises:

[0006] a substrate;

[0007] a driving structure layer, disposed on the substrate;

[0008] an inorganic layer, disposed on the driving structure layer, wherein a recess is disposed on the inorganic layer, a side surface of the recess and a plane where the inorganic layer is located form a first included angle, and the first included angle is less than 90 degrees;

[0009] an anode, disposed on the inorganic layer and covering the recess;

[0010] a pixel definition layer, disposed on the inorganic layer, wherein the pixel definition layer is provided with a limiting opening, the limiting opening exposes the anode and corresponds to the recess, a side wall of the limiting opening and a plane where the pixel definition layer is located form a second included angle, the second included angle is less than 90 degrees, and the second included angle is less than the first included angle;

[0011] a light-emitting layer, disposed on the anode and in the limiting opening.

[0012] a cathode disposed on the light-emitting layer and corresponding to cover the recessed portion.

[0013] Optionally, in some embodiments of the present application, the depth of the recessed portion is less than or equal to the thickness of the inorganic layer.

[0014] Optionally, in some embodiments of the present application, 30 degrees ≤ the first included angle ≤ 70 degrees, and 20 degrees ≤ the second included angle ≤ 40 degrees.

[0015] Optionally, in some embodiments of the present application, the driving structure layer comprises a buffer layer, a thin film transistor layer, and a planarization layer, the buffer layer is disposed on the substrate, the thin film transistor layer is disposed on the buffer layer, the planarization layer is disposed on the thin film transistor layer, and the inorganic layer covers the planarization layer.

[0016] The thickness of the inorganic layer is between 0.025 times and 0.34 times the thickness of the planarization layer.

[0017] Optionally, in some embodiments of the present application, in the area corresponding to the defined opening, the inorganic layer comprises at least two sections, and the recessed portion separates the adjacent two sections.

[0018] Optionally, in some embodiments of the present application, the recessed portion is annular or grid-shaped.

[0019] Optionally, in some embodiments of the present application, in the area corresponding to the defined opening, the inorganic layer comprises an intermediate region and an edge region disposed on the periphery of the intermediate region.

[0020] The depth of the recessed portion located in the intermediate region is greater than the depth of the recessed portion located in the edge region.

[0021] Optionally, in some embodiments of the present application, the bottom width of the recessed portion is between 1 micrometer and 5 micrometers, and the depth of the recessed portion is between 0.1 micrometer and 1 micrometer.

[0022] Optionally, in some embodiments of the present application, in the area corresponding to the defined opening, the inorganic layer comprises an intermediate region and an edge region disposed on the periphery of the intermediate region.

[0023] The first included angle of the recessed portion located in the intermediate region is greater than the first included angle of the recessed portion located in the edge region.

[0024] Optionally, in some embodiments of the present application, in the cross section in the thickness direction of the display panel, the light-emitting layer and the cathode corresponding to the recessed portion area are both formed with a first concave portion.

[0025] Optionally, in some embodiments of the present application, the display panel further comprises, in sequence, a light extraction layer, a first inorganic encapsulation layer, an organic layer and a second inorganic encapsulation layer, which are covered on the cathode;

[0026] In the cross section along the thickness direction of the display panel, the light extraction layer and the first inorganic encapsulation layer are both formed with a second concave part corresponding to the concave part region.

[0027] Optionally, in some embodiments of the present application, the part of the planar layer at the concave part has a first roughness, and the part of the planar layer covered by the inorganic layer has a second roughness, the first roughness being greater than the second roughness.

[0028] The embodiments of the present application adopt forming an inorganic layer on a driving structure layer, and setting a concave part on the inorganic layer. An anode is set on the inorganic layer and covers the concave part; a pixel definition layer is set on the inorganic layer; the pixel definition layer is opened with a limited port, the limited port exposing the anode and corresponding to the concave part. A light emitting layer is set on the anode and in the limited port; a cathode is set on the light emitting layer and corresponds to cover the concave part.

[0029] By setting the concave part in the inorganic layer, on the one hand, due to the characteristics of the inorganic layer material, the effect of preventing water and oxygen can be achieved, reducing the invasion of water and oxygen from the planar layer into the light emitting layer; on the other hand, the setting of the concave part makes the anode above the film layer have a concave-convex structure, when the light radiates to the concave-convex structure, the propagation path of the light changes, reducing the light waveguide effect, and further improving the light extraction efficiency of the panel.

[0030] In addition, the embodiments of the present application adopt forming a concave part on the inorganic layer, compared with forming a concave part on the planar layer or other organic layer, the inorganic layer is relatively easy to form a larger first included angle under the condition of a thinner thickness, which can reduce the difficulty and cost of the process, and the larger first included angle can better improve the light extraction effect of the panel. BRIEF DESCRIPTION OF DRAWINGS

[0031] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following will briefly introduce the drawings needed to be used in the embodiment description. Obviously, the drawings in the following description are only some embodiments of the present application, and other drawings can also be obtained by those skilled in the art without any creative labor.

[0032] Figure 1 is a structural schematic diagram of a display panel provided by the first embodiment of the present application;

[0033] Figure 2 is a light radiation diagram of the display panel in the light waveguide mode provided by the first embodiment of the present application;

[0034] Figure 3 FIG. 1 is a partial structure schematic diagram of a display panel provided by a first embodiment of the present application;

[0035] Figure 4 FIG. 2 is a structure schematic diagram of an inorganic layer corresponding to a limiting port in the display panel provided by the first embodiment of the present application;

[0036] Figure 5 FIG. 3 is another structure schematic diagram of an inorganic layer corresponding to a limiting port in the display panel provided by the first embodiment of the present application;

[0037] Figure 6 FIG. 4 is a structure schematic diagram of a display panel provided by a second embodiment of the present application;

[0038] Figure 7 FIG. 5 is a structure schematic diagram of a display panel provided by a third embodiment of the present application. DETAILED DESCRIPTION

[0039] The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only some of the embodiments of the present application, but not all the embodiments of the present application. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative work fall within the scope of protection of the present application. In addition, it should be understood that the specific embodiments described herein are only used to illustrate and explain the present application, and are not used to limit the present application. In the present application, the orientation words such as "upper" and "lower" generally refer to the upper and lower of the device in the actual use or working state, and specifically refer to the direction of the drawing surface in the drawings; and "inner" and "outer" refer to the contour of the device.

[0040] The present application provides a display panel, which will be described in detail below. It should be noted that the description order of the following embodiments is not limited as the preferred order of the embodiments.

[0041] Please refer to Figure 1 The present application provides a display panel 100, which includes a substrate 11, a driving structure layer 12, an inorganic layer 13, an anode 14, a pixel definition layer 15, a light-emitting layer 16 and a cathode 17.

[0042] The driving structure layer 12 is arranged on the substrate 11. The inorganic layer 13 is arranged on the driving structure layer 12, and a recess ac is arranged on the inorganic layer 13. The anode 14 is arranged on the inorganic layer 13 and covers the recess ac.

[0043] The pixel definition layer 15 is arranged on the inorganic layer 13. The pixel definition layer 15 is provided with a limited opening xk, the limited opening xk exposes the anode 14 and corresponds to the recess ac. The light-emitting layer 16 is arranged on the anode 14 and in the limited opening xk. The cathode 17 is arranged on the light-emitting layer 16 and corresponds to cover the recess ac.

[0044] The side surface of the recess ac and the plane where the inorganic layer 13 is located form a first angle θ, the first angle θ is less than 90 degrees. The side wall of the limited opening xk and the plane where the pixel definition layer 15 is located form a second angle α, the second angle α is less than 90 degrees. The second angle α is less than the first angle θ.

[0045] The display panel 100 of the first embodiment can prevent water and oxygen from entering the light-emitting layer 16 from the flat layer due to the characteristics of the material of the inorganic layer 13. In addition, the recess ac is arranged, so that the anode 14 and the film layers above the anode 14 have a concave-convex structure. When light is radiated to the concave-convex structure, the propagation path of the light changes, the light waveguide effect is reduced, and the light extraction efficiency of the display panel 100 is improved.

[0046] Specifically, in actual application, the anode has a reflective metal, the cathode has a metal material with a certain light transmittance, and an optical microcavity is formed between the cathode and the anode. The light emitted by the light-emitting atoms of the light-emitting layer generally goes in all directions, and some molecules with horizontal orientation are more conducive to light emission, but cannot be completely horizontally oriented. Therefore, under the action of charge injection and recombination, the atoms can produce visible light in the forward direction, and also produce side emission which is limited in the organic material or the pixel definition layer. This part of light is constantly reflected to form a waveguide mode, but cannot be emitted in the forward direction, thereby reducing the light extraction coupling efficiency. The anode 14 and the film layers above the anode 14 have a concave-convex structure, which can emit this part of light, thereby increasing the light extraction efficiency, as shown in FIG. 2. Figure 2

[0047] In addition, the recess ac is formed on the inorganic layer 13 in the embodiment of the present application. Compared with forming the recess on the flat layer or other organic layer, the inorganic layer 13 is easier to form a larger first angle θ under the condition of a thinner thickness, which can reduce the difficulty and cost of the process, and the larger first angle θ can better improve the light extraction effect of the panel.

[0048] It should be understood that there is a difference in refractive index between the insulating film layers and between the insulating film layers and the electrodes (anode and cathode). Due to the difference in refractive index between the film layers, the light waveguide effect is generated.

[0049] ​In the display panel 100 of the first embodiment, it can be understood that the first included angle θ is too small, and the light-emitting efficiency of the panel is not improved obviously. The first included angle θ is too large, and the uniformity of the anode 14 is affected.

[0050] Therefore, in order to improve the light-emitting efficiency of the display panel 100 and not affect the uniformity of the anode film, the first included angle θ can be set to 30 degrees to 70 degrees. For example, the first included angle θ can be 30 degrees, 45 degrees, 60 degrees or 70 degrees.

[0051] Please continue to refer to Figure 3 It can be understood that the second included angle α is too small, and the light-emitting efficiency of the panel is not improved obviously. The second included angle α is too large, and the continuity and uniformity of the light-emitting layer 16 and the cathode 17 are affected.

[0052] Optionally, the second included angle α is 20 degrees to 40 degrees. For example, the second included angle α can be 20 degrees, 30 degrees or 40 degrees.

[0053] Optionally, the substrate 11 can be a rigid substrate or a flexible substrate. The material of the substrate 11 includes one of glass, sapphire, silicon, silicon dioxide, polyethylene, polypropylene, polystyrene, polylactic acid, polyethylene terephthalate, polyethylene terephthalate, polyethylene naphthalate, polycarbonate, polyether sulfone, aromatic fluorine toluene containing polyarylate, polycyclic olefin, polyimide or polyurethane.

[0054] Optionally, the substrate 11 can be a multi-layer film stack or a single-layer structure.

[0055] The driving structure layer 12 includes a buffer layer 121, a thin film transistor layer 122 and a flat layer 123. The buffer layer 121 is arranged on the substrate 11. The thin film transistor layer 122 is arranged on the buffer layer 121. The flat layer 123 is arranged on the thin film transistor layer 122. The inorganic layer 13 covers the flat layer 123.

[0056] The thickness of the inorganic layer 13 is between 0.025 times and 0.34 times the thickness of the flat layer 123.

[0057] Therefore, in the embodiment, the recess ac is formed in the inorganic layer 13. Compared with forming a recess with the same angle in the organic layer, the inorganic layer 13 can be thinner and the process difficulty is relatively simple.

[0058] It should be understood that the inorganic layer generally adopts a dry etching process to form an opening structure.

[0059] Optionally, the thickness of the inorganic layer 13 is 0.025 times, 0.05 times, 0.1 times, 0.3 times or 0.34 times the thickness of the flat layer 123.

[0060] Optionally, the thickness of the planar layer 123 can be between 3 microns and 4 microns, such as 3 microns, 3.5 microns or 4 microns, etc.

[0061] Optionally, the planar layer 123 can be formed of multiple layers of at least one organic material layer. However, the present disclosure is not limited thereto, such as the planar layer 123 is a single layer of organic material layer.

[0062] The thin film transistor layer 122 is sequentially stacked on the buffer layer 121 with an active layer 12a, a first insulating layer jy1, a first metal layer 12b, a second insulating layer jy2, a second metal layer 12c, a third insulating layer jy3, a third metal layer 12d, a fourth insulating layer jy4 and a fourth metal layer 12e.

[0063] Optionally, the above-mentioned buffer layer 121, the first insulating layer jy1, the second insulating layer jy2, the third insulating layer jy3, the fourth insulating layer jy4 and the inorganic layer 13 can each be formed of multiple inorganic material layers stacked in an alternating manner. For example, the buffer layer 121, the third insulating layer jy3 and the inorganic layer 13 can be formed of a double layer formed by stacking inorganic material layers including at least one of silicon oxide (SiO x ), silicon nitride (SiN x ), silicon oxynitride (SiO x N y ), aluminum oxide, magnesium oxide and titanium oxide, or a multiple layer formed by alternately stacking inorganic material layers including at least one of silicon oxide (SiO x) , silicon nitride (SiN x ), silicon oxynitride (SiO x N y ), aluminum oxide, magnesium oxide and titanium oxide. However, the present disclosure is not limited thereto, and the buffer layer 121, the third insulating layer jy3 and the inorganic layer 13 can be formed of a single layer of inorganic material layer containing the above-mentioned insulating material.

[0064] In addition, in one or more embodiments, the third insulating layer jy3 can be made of an organic insulating material such as polyimide (PI) or the like.

[0065] The materials of the fourth insulating layer jy4 and the planar layer 123 can each be an organic transparent film layer, such as a transparent photoresist, an epoxy resin, a polyimide, a polyvinyl alcohol, a polymethyl methacrylate, a polystyrene, etc.

[0066] The material of the active layer 12a can be formed of single crystal silicon, polycrystalline silicon (poly-Si) or an oxide semiconductor.

[0067] The material of the first metal layer 12b, the second metal layer 12c, the third metal layer 12d and the fourth metal layer 12e can be formed by using a metal element selected from chromium (Cr), copper (Cu), aluminum (Al), gold (Au), silver (Ag), zinc (Zn), molybdenum (Mo), tantalum (Ta), titanium (Ti), tungsten (W), manganese (Mn), nickel (Ni), iron (Fe), cobalt (Co), an alloy containing any of the above metal elements, or an alloy containing any combination of the above metal elements, etc. In addition, the first metal layer 12b, the second metal layer 12c, the third metal layer 12d and the fourth metal layer 12e can have a single-layer structure or a laminated structure of two or more layers.

[0068] Optionally, the first metal layer 12b includes a gate electrode. The third metal layer 12d includes a source electrode and a drain electrode. The fourth metal layer 12e includes a conductive pad. The drain electrode or the source electrode is connected to the conductive pad, and the conductive pad is connected to the anode 14.

[0069] In the embodiments of the present application, the driving structure layer 12 can also have other architectures, such as a bottom-gate thin-film transistor architecture, or an architecture of two or three metal layers, etc.

[0070] Optionally, as shown in FIG. 1C, the depth d of the recessed portion ac in the inorganic layer 13 is less than or equal to the thickness of the inorganic layer 13. Figure 3

[0071] It can be understood that when the depth d of the recessed portion ac is less than the thickness of the inorganic layer 13, the recessed portion ac is a groove. When the depth d of the recessed portion ac is equal to the thickness of the inorganic layer 13, the recessed portion ac is an opening.

[0072] When the recessed portion ac is a groove, in the region defining the opening xk, the inorganic layer 13 isolates the planar layer 123 and the anode 14. When the recessed portion ac is an opening, in the region defining the opening xk, part of the anode 14 contacts the planar layer 123, improving the stress release performance of the anode 14; and in the case of a limited depth d, the inorganic layer 13 can be thinned compared to the groove solution.

[0073] In some embodiments, part of the recessed portion ac can be an opening, and part of the recessed portion ac can be a groove; or part of the recessed portion ac can be an opening, and part of the recessed portion ac can be a groove.

[0074] Optionally, in the region corresponding to the opening xk, the inorganic layer 13 includes a middle zone 13z and an edge zone 13h arranged on the side of the middle zone 13z.

[0075] ​The depth of the recess ac in the middle region 13z is greater than the depth of the recess ac in the edge region 13h, so that the anode 14 has a deeper recess structure in the portion corresponding to the middle region 13z than in the portion corresponding to the edge region 13h, which not only improves the light extraction efficiency, but also reduces the risk of breakage of the anode 14 and the film layers above near the side wall of the limiting port xk because the recess ac in the edge region 13h is relatively shallow.

[0076] It can be understood that if the depth d of the recess ac is too shallow, it has little effect on changing the light propagation path and cannot achieve the effect of improving the light extraction efficiency; if the depth d of the recess ac is too deep, it will affect the continuity of the anode 14 climbing and the uniformity of the cathode film formation.

[0077] In addition, if the bottom width L of the recess ac is too narrow and the depth of the recess ac is too deep, a hole-type pit will be formed, which will affect the film formation continuity and uniformity of the anode and the light-emitting layer, and the control precision of the process is difficult to achieve; if the bottom width L of the recess ac is too wide, the light extraction efficiency of the panel will be sacrificed to some extent.

[0078] Therefore, in the embodiment, the bottom width L of the recess ac is between 1 micrometer and 5 micrometers. The depth d of the recess ac is between 0.1 micrometer and 1 micrometer. Such a setting improves the light extraction efficiency of the panel and ensures the continuity and uniformity of the film formation of the anode 14 and the film layers above.

[0079] Optionally, the bottom width L of the recess ac can be 1 micrometer, 2 micrometers, 3 micrometers, 4 micrometers or 5 micrometers. The depth d of the recess ac can be 0.1 micrometer, 0.2 micrometer, 0.3 micrometer, 0.4 micrometer, 0.5 micrometer, 0.6 micrometer, 0.7 micrometer, 0.8 micrometer, 0.9 micrometer or 1 micrometer.

[0080] Optionally, the thickness of the inorganic layer 13 is less than or equal to 1 micrometer, such as 0.1 micrometer, 0.2 micrometer, 0.3 micrometer, 0.4 micrometer, 0.5 micrometer, 0.6 micrometer, 0.7 micrometer, 0.8 micrometer, 0.9 micrometer or 1 micrometer.

[0081] The material of the pixel definition layer 15 can be an organic transparent film layer, such as transparent photoresist, epoxy resin, polyimide, polyvinyl alcohol, polymethyl methacrylate, polystyrene, etc.

[0082] When the material of the pixel definition layer 15 is a polymer resin, the second included angle a of the patterned pixel definition layer 15 formed after the photolithography process is generally smaller than the first included angle θ etched by the dry etching of the inorganic layer 13 because the polymer resin has a certain fluidity when it is thermally cured.

[0083] Optionally, at the same time, the second included angle a is smaller than the first included angle θ. Since the light-emitting layer 16 is formed by evaporation, the light-emitting layer 16 is formed on the anode 14, and the anode 14 is formed on the inorganic layer 13 and covers the recess ac. At this time, the anode 14 makes up for the first included angle θ to some extent, so that the included angle of the portion of the anode 14 corresponding to the recess ac is smaller. Therefore, when the light-emitting layer 16 is formed on the portion of the anode 14 corresponding to the recess ac and on the wall of the pixel definition layer 15, the included angles tend to be the same, the uniformity of the formation of the light-emitting layer 16 is improved, and the light extraction effect of the display panel 100 is improved.

[0084] Of course, the feature that the second included angle a is smaller than the first included angle θ can also be realized by other processes or by adjusting process parameters according to different materials, and the present application is not limited thereto.

[0085] Optionally, the light-emitting layer 16 can be formed of a low-molecular organic material or a high-molecular organic material such as PEDOT (poly(3,4-ethylenedioxythiophene)).

[0086] In addition, the light-emitting layer 16 can also be formed of multiple layers including a hole injection layer (HIL), a hole transport layer (HTL), an electron transport layer (ETL), an electron injection layer (EIL), or an emission layer. When the light-emitting layer 16 includes all the layers, the hole injection layer (HIL) is arranged on the anode 14, and the hole transport layer (HTL), the organic emission layer, the electron transport layer (ETL), and the electron injection layer (EIL) are sequentially stacked thereon.

[0087] Optionally, in the cross section of the display panel 100 in the thickness direction MN, the light-emitting layer 16 and the cathode 17 corresponding to the recess ac region are each formed with a first concave portion. Such a configuration reduces the light waveguide effect of the light-emitting layer 16 and the cathode 17, and further improves the light extraction efficiency of the display panel 100.

[0088] The display panel 100 further includes a light extraction layer 18, a first inorganic encapsulation layer 191, an organic layer 192, and a second inorganic encapsulation layer 193 which are sequentially arranged on the cathode 17.

[0089] In the cross section of the display panel 100 in the thickness direction MN, the light extraction layer 18 and the first inorganic encapsulation layer 191 corresponding to the recess ac region are each formed with a second concave portion. Such a configuration reduces the light waveguide effect of the light extraction layer 18 and the first inorganic encapsulation layer 191, and further improves the light extraction efficiency of the display panel 100.

[0090] Please refer to Figure 4 and Figure 5 In the region corresponding to the defined port xk, the inorganic layer 13 includes at least two portions 131, and the recess ac separates the adjacent two portions 131.

[0091] The first embodiment divides the inorganic layer 13 into multiple sub-regions 131 by the recess ac, thereby improving the uniformity of light emission of the display panel 100.

[0092] Optionally, in the region corresponding to the defined opening xk, the recess ac can be annular, grid-shaped, or strip-shaped, etc.

[0093] In some embodiments, in the region corresponding to the defined opening xk, the recess ac can also be circular, square, etc.

[0094] Please refer to Figure 6 The display panel 100 of the second embodiment is different from the display panel 100 of the first embodiment in that, in the region corresponding to the defined opening xk, the first included angle θ of the recess ac in the middle region 13z is greater than the first included angle θ of the recess ac in the edge region 13h.

[0095] Such a configuration can improve the uniformity of light emission of the display panel 100.

[0096] It should be noted that the second embodiment can be based on the first embodiment and add the above-mentioned distinguishing features; or it can be based on the depth of the recess ac in the middle region 13z being equal to the depth of the recess ac in the edge region 13h and add the above-mentioned distinguishing features.

[0097] Please refer to Figure 7 The display panel 100 of the third embodiment is different from the display panel 100 of the first or second embodiment in that the portion of the planar layer 123 at the recess ac has a first roughness. The portion of the planar layer 123 covered by the inorganic layer 13 has a second roughness. The first roughness is greater than the second roughness.

[0098] That is, the portion of the planar layer 123 at the recess ac is formed with a microstructure 12w.

[0099] When the recess ac is an opening, the opening exposes the microstructure 12w; when the recess ac is a groove, the bottom of the groove covers the microstructure 12w. By using the microstructure 12w corresponding to the recess ac, when light is radiated to the microstructure 12w, it will produce diffuse reflection, thereby further improving the light emission efficiency.

[0100] The microstructure 12w can be formed by continuing to etch the exposed planar layer 123 using the etching gas for etching the inorganic layer 13, so that the portion of the planar layer 123 corresponding to the recess ac forms the microstructure 12w; at this time, the recess ac is an opening. Alternatively, the microstructure 12w can be formed on the planar layer 123 first, and then the inorganic layer 13 is formed on the planar layer 123. This method can form a local or full-surface microstructure 12w.

[0101] In some embodiments, the microstructure 12w can also be provided on the entire surface.

[0102] The third embodiment of the present application forms an inorganic layer 13 on the driving structure layer 12, and sets a recess ac on the inorganic layer 13. The anode 14 is provided on the inorganic layer 13 and covers the recess ac; the pixel definition layer 15 is provided on the inorganic layer 13; the pixel definition layer 15 is provided with a limiting hole xk, which exposes the anode 14 and corresponds to the recess ac. The light emitting layer 16 is provided on the anode 14 and in the limiting hole xk; the cathode 17 is provided on the light emitting layer 16 and corresponds to cover the recess ac.

[0103] By setting the recess ac in the inorganic layer 13, on the one hand, due to the characteristics of the material of the inorganic layer 13, the effect of preventing water and oxygen can be achieved, and the invasion of water and oxygen from the flat layer 123 into the light emitting layer is reduced; on the other hand, the setting of the recess ac makes the anode 14 above the film layer have a concave-convex structure, when the light radiates to the concave-convex structure, the propagation path of the light changes, the light waveguide effect is reduced, and the light efficiency of the display panel 100 is improved.

[0104] The above describes in detail a display panel provided by the embodiments of the present application, and the principles and implementation manners of the present application are described by applying specific examples; the above embodiment descriptions are only used to help understand the method of the present application and its core idea; at the same time, for those skilled in the art, according to the idea of the present application, the specific implementation manner and application range will be changed; in summary, the content of the present description should not be understood as a limitation of the present application.

Claims

1. A display panel, characterized by, The application relates to a display panel, comprising: a substrate; a driving structure layer disposed on the substrate; an inorganic layer disposed on the driving structure layer, the inorganic layer being provided with a recess, a side surface of the recess and a plane where the inorganic layer is located forming a first included angle, the first included angle being less than 90 degrees; an anode disposed on the inorganic layer and covering the recess; a pixel definition layer disposed on the inorganic layer, the pixel definition layer being provided with a limiting opening, the limiting opening exposing the anode and corresponding to the recess, a side wall of the limiting opening and a plane where the pixel definition layer is located forming a second included angle, the second included angle being less than 90 degrees, the second included angle being less than the first included angle; a light-emitting layer disposed on the anode and in the limiting opening; and a cathode disposed on the light-emitting layer and corresponding to the recess. In a region corresponding to the limiting opening, the inorganic layer comprises an intermediate region and an edge region disposed on a periphery of the intermediate region; the first included angle of the recess located in the intermediate region is greater than the first included angle of the recess located in the edge region. The depth of the recess is less than or equal to the thickness of the inorganic layer.

2. The display panel of claim 1, wherein, 30 degrees <= the first included angle <= 70 degrees, and 20 degrees <= the second included angle <= 40 degrees.

3. The display panel of claim 2, wherein, The driving structure layer comprises a buffer layer, a thin film transistor layer and a planarization layer, the buffer layer is disposed on the substrate, the thin film transistor layer is disposed on the buffer layer, the planarization layer is disposed on the thin film transistor layer, and the inorganic layer covers the planarization layer.

4. The display panel of claim 2, wherein, The thickness of the inorganic layer is between 0.025 times and 0.34 times the thickness of the planarization layer. In the region corresponding to the limiting opening, the inorganic layer comprises at least two sections, and the recess separates two adjacent sections.

5. The display panel of claim 2, wherein, The recess is annular or grid-shaped.

6. The display panel of claim 5, wherein, In the region corresponding to the limiting opening, the inorganic layer comprises an intermediate region and an edge region disposed on a periphery of the intermediate region.

7. The display panel of claim 2, wherein, The depth of the recess located in the intermediate region is greater than the depth of the recess located in the edge region. The bottom width of the recess is between 1 micrometer and 5 micrometers, and the depth of the recess is between 0.1 micrometer and 1 micrometer.

8. The display panel according to any one of claims 1-7, characterized in that, The part of the planarization layer at the recess has a first roughness, and the part of the planarization layer covered by the inorganic layer has a second roughness, the first roughness being greater than the second roughness.

9. The display panel of claim 4, wherein, ​

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