Voltage regulating device

Abstract

The voltage regulating device includes a first impedance, a reference current generating circuit, a current mirror circuit, a second impedance and a negative feedback circuit. The reference current generating circuit is used to generate a reference current according to a first potential difference, a reference voltage and a first impedance value of the first impedance. The current mirror circuit is used to output an output current having a first proportion with the reference current. The second impedance is used to generate an output voltage according to a second impedance value, a voltage of the first node and the output current. The negative feedback circuit is used to generate a feedback voltage according to the voltage of the first node, and adjust the output voltage according to the feedback voltage. The second proportion between the second impedance value and the first impedance value is reciprocal to the first proportion, and the voltage of the first node is the same as the first potential difference, so that the output voltage conforms to the reference voltage.

Description

TECHNICAL FIELD

[0001] The present disclosure relates to a voltage generation technique, in particular, a voltage regulating device. BACKGROUND

[0002] A voltage regulator that generally makes the output voltage independent of the load includes an operational amplifier (OPA) that locks the voltage so that the output voltage does not change with the load. However, the operational amplifier is a complex circuit composed of a plurality of sub-circuits with different functions, and thus the operational amplifier occupies a large area of the voltage regulator or chip. In addition, the operational amplifier is a complex circuit, and thus the operational amplifier needs to perform more component variability compensation than a simple circuit, which limits the bandwidth of the operational amplifier when performing voltage regulation (e.g., unable to operate at a high-speed bandwidth).

[0003] In addition, a voltage follower is another circuit for generating a voltage, and the voltage follower has a simple structure. However, the voltage generated by the voltage follower changes with temperature, and the voltage also changes with the load because the voltage follower is an open loop. SUMMARY

[0004] In view of the above, the present disclosure provides a voltage regulating device. According to some embodiments, the voltage regulating device can make the output voltage independent of the load and temperature without performing additional component variability compensation. According to some embodiments, the voltage regulating device can reduce the area occupied by the device or chip.

[0005] According to some embodiments, a voltage regulating device includes a first impedance, a reference current generating circuit, a current mirror circuit, a second impedance, and a negative feedback circuit. The first impedance has a first impedance value. The reference current generating circuit is coupled to the first impedance and a reference voltage. The reference current generating circuit has a first potential difference. The reference current generating circuit is configured to generate a reference current according to the reference voltage, the first potential difference, and the first impedance value. The current mirror circuit is coupled to the reference current generating circuit and a first node. The current mirror circuit is configured to output an output current to the first node according to the reference current. The output current has a first ratio with the reference current. The second impedance is coupled between the first node and a second node. The second impedance has a second impedance value. The second impedance is configured to generate an output voltage at the second node according to a voltage at the first node, the output current, and the second impedance value. The second impedance value has a second ratio with the first impedance value. The second ratio is inversely proportional to the first ratio. The negative feedback circuit is coupled to the first node and the second node. The negative feedback circuit is configured to generate a feedback voltage according to the voltage at the first node, and to adjust the output voltage according to the feedback voltage. The voltage at the first node is substantially equal to the first potential difference, such that the output voltage is substantially equal to the reference voltage.

[0006] In summary, according to some embodiments, the voltage regulating device has a simple structure, such that no extra component variability compensation is needed, and the operating bandwidth is not limited (e.g., can operate in high speed bandwidth). According to some embodiments, by having the first ratio (the ratio between the output current and the reference current) and the second ratio (the ratio between the second impedance value and the first impedance value) inversely proportional to each other, the output voltage is not affected by temperature. According to some embodiments, by adjusting the output voltage through the negative feedback circuit, the output voltage is not affected by load. BRIEF DESCRIPTION OF DRAWINGS

[0007] Figure 1 A block diagram of a voltage regulating device according to some embodiments. DETAILED DESCRIPTION

[0008] As used herein, the terms "first" and "second" are used to distinguish elements being referred to, and are not used to order or limit the difference of the elements being referred to, and are not used to limit the scope of the disclosure. Also, as used herein, the term "coupled" means that two or more elements are directly or indirectly in physical or electrical contact with each other; for example, if a first device is coupled to a second device, it means that the first device can be directly electrically connected to the second device, or indirectly electrically connected to the second device through other devices or connection means.

[0009] REFERENCE Figure 1 , Figure 1This is a block diagram of a voltage regulating device 10 according to some embodiments of this invention. The voltage regulating device 10 includes a first impedance R1, a reference current generating circuit 11, a current mirror circuit 13, a second impedance R2, and a negative feedback circuit 15. The reference current generating circuit 11 is coupled to the first impedance R1 and a reference voltage V. ref The current mirror circuit 13 is coupled to the reference current generating circuit 11 and a first node N1. The second impedance R2 is coupled between the first node N1 and a second node N2. The negative feedback circuit 15 is coupled to the first node N1 and the second node N2. In some embodiments, the first impedance R1, the current mirror circuit 13, and the negative feedback circuit 15 are also coupled to the ground terminal GND.

[0010] Reference voltage V ref It can be a temperature-coefficient-free bandgap reference voltage generated by a bandgap reference voltage generation circuit (not shown in the figure). That is, the reference voltage V... ref It can be a voltage that is independent of temperature coefficient or does not change with temperature.

[0011] The first impedance R1 has a first impedance value. The first impedance R1 can be formed by passive components such as resistors, capacitors, and inductors. The first impedance R1 is coupled between the ground terminal GND and the reference current generating circuit 11. In some embodiments, such as... Figure 1 As shown, the first impedance R1 is a resistor, and the first impedance value is the resistance value. Although Figure 1 The first impedance R1 is represented by a single resistor symbol, but this disclosure is not limited to this; multiple resistors connected in series and / or parallel may be included depending on the actual design requirements. Furthermore, this resistor can be implemented using a metal-oxide-semiconductor transistor or through a well region formed by ion implantation.

[0012] The reference current generating circuit 11 has a first potential difference V gs1 The reference current generation circuit 11 is used to generate current based on the reference voltage V. ref First potential difference V gs1 And the first impedance value, generating a reference current I m1 In some embodiments, as shown in Equation 1, the reference current I m1 The reference current generating circuit 11 generates the reference voltage V. ref Subtract the first potential difference V gs1 Then divide by the first impedance value to obtain the result.

[0013]

[0014] Where r1 is the first impedance value.

[0015] The current mirror circuit 13 is used to determine the reference current I.m1 Output current I m2 To the first node N1 (explained later), where the output current I m2 With reference current I m1 There is a first ratio between them (as shown in Equation 2).

[0016] I m2 =I m1 *k1………………………………(Equation 2)

[0017] Where k1 is the first ratio.

[0018] The second impedance R2 has a second impedance value. The second impedance R2 can be formed by passive components such as resistors, capacitors, and inductors. In some embodiments, such as... Figure 1 As shown, the second impedance R2 is a resistance, and the second impedance value is the resistance value. Although Figure 1 The second impedance R2 is represented by a single resistor symbol, but the invention is not limited to this; multiple resistors connected in series and / or parallel may be included depending on actual design requirements. Furthermore, this resistor can be implemented using a metal-oxide-semiconductor transistor or through a well region formed by ion implantation. The second impedance R2 is used to determine the voltage V1 at the first node N1 and the output current I. m2 And the second impedance value generates an output voltage V at the second node N2. out As shown in Equations 3 and 4, there is a second ratio between the second impedance value and the first impedance value, and the second ratio is inversely proportional to the first ratio.

[0019] r2=r1*k2………………………………(Equation 3)

[0020]

[0021] Where r1 is the first impedance value, r2 is the second impedance value, k1 is the first ratio, and k2 is the second ratio.

[0022] In some embodiments, the second ratio is determined based on the temperature coefficients of the first impedance R1 and the second impedance R2. For example, assuming both the first impedance R1 and the second impedance R2 are resistors, the materials of the first impedance R1 and the second impedance R2 are different, resulting in different temperature coefficients of resistance. Consequently, at the same temperature, the first impedance value and the second impedance value are different. If the materials of the first impedance R1 and the second impedance R2 are the same, but the temperature coefficient of resistance varies depending on the material properties (for example, a positive temperature coefficient for a conductor and a negative temperature coefficient for a semiconductor or insulator), then if the first impedance R1 and the second impedance R2 are at different temperatures, the first impedance value and the second impedance value will be different. In other words, since the first impedance R1 and the second impedance R2 change with temperature, the second ratio will also change with temperature. In some embodiments, the second ratio is directly proportional to the second impedance value and inversely proportional to the first impedance value, but the present invention is not limited thereto. The second ratio may be directly proportional to the first impedance value and inversely proportional to the second impedance value.

[0023] In some embodiments, as shown in Equation 5, the output voltage V out The second impedance R2 will control the output current I. m2 It is obtained by multiplying by the second impedance value and then adding the voltage V1 of the first node N1.

[0024] V out =V1+I m2 *r2………………………(Equation 5)

[0025] Combining equations 1 through 5 yields equation 6, which shows the output voltage V. out The output voltage V is independent of the magnitudes of the first and second impedance values. out It will not change with temperature.

[0026] V out =V ref +V1-V gs1 ……………………(Equation 6)

[0027] The negative feedback circuit 15 is used to generate a feedback voltage V based on the voltage V1 of the first node N1. fb And based on the feedback voltage V fb Adjust the output voltage V out For example, when the load decreases, the output voltage V out The voltage increases, at which point the negative feedback circuit 15 adjusts according to the voltage V1 at the first node N1 and the feedback voltage V. fb Reduce output voltage V out To output voltage V outThe output voltage V is stable at a certain voltage level; as the load increases, the output voltage V... out The voltage drops, at which point the negative feedback circuit 15 adjusts based on the voltage V1 at the first node N1 and the feedback voltage V. fb Increase the output voltage V out To output voltage V out The voltage level is stabilized at this level. That is, the output voltage V is stabilized through the negative feedback circuit 15. out It will not change with load variations.

[0028] The real value of the voltage V1 at the first node N1 is the same as the first potential difference V. gs1 This makes the output voltage V out Complies with reference voltage V ref Specifically, since the voltage V1 of the first node N1 may change with temperature, the real value of the voltage V1 of the first node N1 is the same as the first potential difference V. gs1 And thus the output voltage V out Complies with reference voltage V ref And it is independent of temperature. For example, the voltage V1 at the first node N1 is the second potential difference V of the sixth transistor M6 in the negative feedback circuit 15. gs2 (For example, the sixth transistor M6 is a metal-oxide-semiconductor (MOS) transistor, and the second potential difference V) gs2 (This refers to the potential difference between the gate and source). Since the sixth transistor M6 has a negative temperature coefficient, the second potential difference V... gs2 It will change with temperature (i.e., as the temperature increases, the second potential difference V) gs2 The temperature decreases; as the temperature decreases, the second potential difference V... gs2 (increases), through the voltage V1 of the first node N1 (i.e., the second potential difference V) gs2 The real value is the same as the first potential difference V. gs1 This will allow the output voltage V to be made out It is unrelated to temperature.

[0029] like Figure 1 As shown, in some embodiments, the current mirror circuit 13 and the negative feedback circuit 15 are also coupled to a working voltage terminal HV for the operation of the current mirror circuit 13 and the negative feedback circuit 15, and the voltage of the working voltage terminal HV is greater than the output voltage V. out Specifically, due to the output voltage V out Complies with reference voltage V ref Compared to the voltage at the operating voltage terminal HV, the reference voltage V refThe value is relatively small. Therefore, by providing the voltage from the working voltage terminal HV to the voltage regulating device 10, the voltage regulating device 10 reduces the voltage from the working voltage terminal HV, thereby outputting a relatively small output voltage V. out .

[0030] like Figure 1 As shown, in some embodiments, the current mirror circuit 13 includes a first current mirror circuit 131A and a second current mirror circuit 131B. Although Figure 1 Two current mirror circuits 131A and 131B are shown, but this disclosure is not limited thereto; the current mirror circuit 13 may include one or more current mirror circuits. The first current mirror circuit 131A is coupled to the reference current generating circuit 11, and the second current mirror circuit 131B is coupled to the first current mirror circuit 131A and the first node N1. The first current mirror circuit 131A is used to generate a reference current I. m1 Output a mirror current I m3 As shown in Equation 7, the mirror current I m3 With reference current I m1 There is a third ratio between them. For example, the third ratio is related to the reference current I. m1 It is directly proportional to the third proportion, and the third proportion is related to the mirror current I. m3 The ratio is inversely proportional, but this disclosure is not limited thereto; the third ratio may be related to the reference current I. m1 It is directly proportional to the third proportion, and the third proportion is related to the mirror current I. m3 The ratio is inversely proportional. The third ratio can be constant or configurable; for example, the first current mirror circuit 131A is an adjustable current mirror, thus the magnitude of the third ratio can be adjusted. The second current mirror circuit 131B is used to adjust the mirror current I based on the mirrored current I. m3 Output current I m2 The output is sent to the first node N1. As shown in Equation 8, the output current I... m2 With mirror current I m3 There is a fourth ratio between them. For example, the fourth ratio is related to the mirror current I. m3 It is directly proportional to the fourth ratio and is related to the output current I. m2 It is inversely proportional, but this disclosure is not limited thereto; the fourth ratio can be related to the mirror current I. m3 It is directly proportional to the fourth ratio and is related to the output current I. m2 The fourth ratio is inversely proportional. It can be fixed or settable; for example, the second current mirror circuit 131B is an adjustable current mirror, thus allowing adjustment of the fourth ratio. The third and fourth ratios form the first ratio. For example, as shown in Equation 9, the reciprocal of the third ratio multiplied by the fourth ratio is the first ratio; in other words, the first, third, and fourth ratios are inversely proportional to each other.

[0031]

[0032]

[0033]

[0034] Among them, k3 is the third ratio, k4 is the fourth ratio, and k1 is the first ratio.

[0035] like Figure 1 As shown, in some embodiments, the first current mirror circuit 131A includes a first transistor M1 and a second transistor M2. The second current mirror circuit 131B includes a third transistor M3 and a fourth transistor M4. The first transistor M1 and the second transistor M2 can be P-type MOS transistors or P-type bipolar transistors. The third transistor M3 and the fourth transistor M4 can be N-type MOS transistors or N-type bipolar transistors. Here, the description assumes that the first transistor M1 and the second transistor M2 are P-type MOS transistors, and the third transistor M3 and the fourth transistor M4 are N-type MOS transistors.

[0036] The first transistor M1 is coupled between the operating voltage terminal HV and the reference current generating circuit 11 (specifically, the source of the first transistor M1 is coupled to the operating voltage terminal HV, and the drain of the first transistor M1 is coupled to the reference current generating circuit 11), and the reference current I... m1 A current flows through the first transistor M1. The second transistor M2 is coupled between the operating voltage terminal HV and the second current mirror circuit 131B (specifically, the source of the second transistor M2 is coupled to the operating voltage terminal HV, and the drain of the second transistor M2 is coupled to the second current mirror circuit 131B). The gates of the first transistor M1, the second transistor M2, and the drain of the first transistor M1 are coupled together. The first current mirror circuit 131A operates based on the reference current I flowing through the first transistor M1. m1 Meanwhile, a mirror current I is generated at the drain of the second transistor M2. m3 In other words, the mirror current I m3 The current flows through the second transistor M2. In some embodiments, as shown in Equation 10, the third ratio is determined based on the size ratio of the first transistor M1 and the second transistor M2 (for example, the potential difference between the drain and gate of the first transistor M1 is equal to or close to the potential difference between the drain and gate of the second transistor M2, so the effect of the first transistor M1 and the second transistor M2 on the reference current I can be ignored). m1 and mirror current I m3 The resulting channel length modulation effect.

[0037]

[0038] wherein, is a size ratio of the first transistor M1, and W is a gate width of the first transistor M1, L is a gate length of the first transistor M1, is a size ratio of the second transistor M2, and W is a gate width of the second transistor M2, L is a gate length of the second transistor M2, and k3 is a third ratio.

[0039] In some embodiments, the first transistor M1 is plural and connected in parallel to each other, and / or the second transistor M2 is plural and connected in parallel to each other. The third ratio is determined according to the number of the first transistor M1 and the number of the second transistor M2. For example, the number of the parallel connection of the first transistor M1 and the number of the parallel connection of the second transistor M2 affect the channel length modulation parameter, and thus affect the value of the mirror current I m3 .

[0040] The third transistor M3 is coupled between the ground terminal GND and the first current mirror circuit 131A (specifically, the source of the third transistor M3 is coupled to the ground terminal GND, and the drain of the third transistor M3 is coupled to the first current mirror circuit 131A), and the mirror current I m3 flows through the third transistor M3. The fourth transistor M4 is coupled between the ground terminal GND and the first node N1 (specifically, the source of the fourth transistor M4 is coupled to the ground terminal GND, and the drain of the fourth transistor M4 is coupled to the first node N1). The gate of the third transistor M3, the gate of the fourth transistor M4, and the drain of the third transistor M3 are coupled together. The second current mirror circuit 131B generates an output current I m3 according to the mirror current I m2 flowing through the third transistor M3, and at the drain of the fourth transistor M4. That is, the output current I m2 flows through the fourth transistor M4. In some embodiments, as shown in equation 11, a fourth ratio is determined according to the size ratio of the third transistor M3 and the fourth transistor M4 (for example, the potential difference between the drain and the gate of the third transistor M3 is equal to or close to the potential difference between the drain and the gate of the fourth transistor M4, and thus the channel length modulation effect of the third transistor M3 and the fourth transistor M4 on the mirror current I m3 and the output current I m2 can be ignored).

[0041]

[0042] wherein, is a size ratio of the third transistor M3, and W is a gate width of the third transistor M3, L is a gate length of the third transistor M3, denoted as the size ratio of the fourth transistor M4, where W represents the gate width of the fourth transistor M4, L represents the gate length of the fourth transistor M4, and k4 represents the fourth ratio.

[0043] In some embodiments, there are multiple third transistors M3 connected in parallel and / or multiple fourth transistors M4 connected in parallel. The fourth ratio is determined based on the number of third transistors M3 and the number of fourth transistors M4. For example, the number of third transistors M3 connected in parallel and the number of fourth transistors M4 connected in parallel will affect the channel length modulation parameter, and thus affect the output current I. m2 The magnitude of the value.

[0044] It is worth noting that the first current mirror circuit 131A can also be implemented with an N-type MOS transistor or an N-type bipolar transistor, and the second current mirror circuit 131B can also be implemented with a P-type MOS transistor or a P-type bipolar transistor. In the above case, based on the disclosure of this disclosure, it can be deduced how to properly adjust the architecture of the current mirror circuit 13 (or the first current mirror circuit 131A and the second current mirror circuit 131B).

[0045] like Figure 1 As shown, in some embodiments, the reference current generating circuit 11 includes a fifth transistor M5. The fifth transistor M5 includes a first control terminal M5_g and a first terminal M5_s. The fifth transistor M5 is coupled between the first impedance R1 and the current mirror circuit 13 (specifically, coupled between the first impedance R1 and the first current mirror circuit 131A). The first control terminal M5_g is coupled to the reference voltage V. ref The first terminal M5_s is coupled to the first impedance R1. A first potential difference V exists between the first control terminal M5_g and the first terminal M5_s. gs1 The fifth transistor M5 operates based on the reference voltage V. ref First potential difference V gs1 The first impedance value generates a reference current I. m1 For example, the fifth transistor M5 generates the reference current I in accordance with Equation 1. m1 .

[0046] Taking the fifth transistor M5 as an N-type MOS transistor as an example, the first control terminal M5_g is the gate of the fifth transistor M5, the first terminal M5_s is the source of the fifth transistor M5, and the drain of the fifth transistor M5 is coupled to the current mirror circuit 13 (specifically, as shown in the diagram). Figure 1 As shown, taking the first transistor M1 as a P-type MOS transistor as an example, the drain of the fifth transistor M5 is coupled to the drain of the first transistor M1. Since the potential difference between the drain and source of the fifth transistor M5 is close to zero, the fifth transistor M5 generates the same (substantially identical) reference current I at its drain and source.m1 First potential difference V gs1 This refers to the gate-source voltage (i.e., the potential difference between the gate and source) of the fifth transistor M5. Because N-type MOS transistors have a negative temperature coefficient, the gate-source voltage (i.e., the first potential difference V) is... gs1 The potential difference V will change with temperature; for example, as the temperature increases, the first potential difference V will change. gs1 As the temperature decreases, the first potential difference V... gs1 It gets bigger.

[0047] In some embodiments, the fifth transistor M5 is an N-type MOS transistor or an N-type bipolar transistor, but this disclosure is not limited thereto. The fifth transistor M5 can be a P-type MOS transistor or a P-type bipolar transistor, and in the above case, the architecture of the reference current generation circuit 11 can be appropriately adjusted based on the disclosure of this disclosure.

[0048] like Figure 1 As shown, in some embodiments, the negative feedback circuit 15 includes a feedback circuit 151 and a voltage follower circuit 153. The feedback circuit 151 is coupled to a first node N1. The voltage follower circuit 153 is coupled to a second node N2 and the feedback circuit 151. The feedback circuit 151 is used to generate a feedback voltage V based on the voltage V1 of the first node N1. fb When the load decreases, the output voltage V... out As the voltage V1 at the first node N1 increases, the feedback voltage V... fb The output voltage V decreases as the load increases. out The voltage V1 at the first node N1 decreases, while the feedback voltage V... fb Rise. The voltage follower circuit 153 is used to adjust the feedback voltage V. fb When rising, the output voltage V increases. out and in the feedback voltage V fb When the voltage drops, the output voltage V decreases. out .

[0049] In some embodiments, the feedback circuit 151 includes a sixth transistor M6. The sixth transistor M6 includes a second control terminal M6_g and a second terminal M6_s. The sixth transistor M6 is coupled between the ground terminal GND, the first node N1, and the voltage follower circuit 153. The second control terminal M6_g is coupled to the first node N1, and the second terminal M6_s is coupled to the ground terminal GND. A second potential difference V1 exists between the second control terminal M6_g and the second terminal M6_s, forming the voltage V1 of the first node N1. gs2 In other words, the potential difference between the second control terminal M6_g and the second terminal M6_s (i.e., the second potential difference V) gs2This refers to the voltage V1 at the first node N1. The sixth transistor M6 is used to generate a feedback voltage V based on the voltage V1 at the first node N1. fb In some embodiments, the sixth transistor M6 further includes a feedback terminal M6_d. The feedback terminal M6_d is coupled to a current source A1 and a voltage follower circuit 153. The end of the current source A1 that is not coupled to the feedback terminal M6_d and the voltage follower circuit 153 is coupled to the operating voltage terminal HV; in other words, the current source A1 is coupled between the operating voltage terminal HV, the voltage follower circuit 153, and the feedback terminal M6_d.

[0050] Taking the sixth transistor M6 as an N-type MOS transistor as an example, the second control terminal M6_g is the gate of the sixth transistor M6, the second terminal M6_s is the source of the sixth transistor M6, and the feedback terminal M6_d is the drain of the sixth transistor M6. The sixth transistor M6 generates a feedback voltage V at the feedback terminal M6_d based on the voltage V1 at the first node N1 and the current from the current source A1. fb Specifically, since the feedback terminal M6_d is coupled to the current source A1, the feedback terminal M6_d has a constant current. Therefore, when the load decreases, the output voltage V... out As the voltage rises, the voltage V1 of the first node N1 also rises (as shown in Equation 5). At this time, the sixth transistor M6 will decrease below the feedback voltage V generated by the feedback terminal M6_d. fb When the load increases, the output voltage V out The voltage V1 of the first node N1 decreases (as shown in Equation 5), and at this time, the voltage V1 of the sixth transistor M6 will increase above the feedback voltage V generated by the feedback terminal M6_d. fb Among them, the second potential difference V gs2 This is the gate-source voltage (i.e., the potential difference between the gate and source) of the sixth transistor M6. Due to the second potential difference V... gs2 It will be affected by temperature, which will in turn affect the voltage V1 of the first node N1 and the output voltage V. out Affected by temperature. Therefore, to avoid output voltage V out Due to temperature influences, by adjusting or selecting the fifth transistor M5 to have the same specifications as the sixth transistor M6, the first potential difference V between the first control terminal M5_g and the first terminal M5_s can be adjusted. gs1 Essentially the same as the second potential difference V gs2 This, in turn, causes the output voltage V out It is independent of temperature. For example, referring to Equation 6, since the voltage V1 at the first node N1 is equal to the second potential difference V... gs2 The second potential difference V gs2 Essentially the same as the first potential difference V gs1 Therefore, the output voltage V out Meets (e.g., equals) the reference voltage V ref Therefore, the output voltage Vout independent of temperature.

[0051] In some embodiments, the sixth transistor M6 is an N-type MOS transistor or an N-type bipolar transistor, but the present disclosure is not limited thereto. The sixth transistor M6 can be a P-type MOS transistor or a P-type bipolar transistor, and in the above case, how to adjust the architecture of the feedback circuit 151 can be derived according to the disclosure of the present disclosure.

[0052] In some embodiments, the voltage follower circuit 153 is a source follower circuit, which includes a seventh transistor M7. The seventh transistor M7 is an N-type MOS transistor. In some embodiments, the voltage follower circuit 153 is an emitter follower circuit, in which case the seventh transistor M7 is an N-type bipolar transistor. The description is given with the voltage follower circuit 153 being a source follower circuit and the seventh transistor M7 being an N-type MOS transistor. The seventh transistor M7 includes a third control terminal M7_g and a third terminal M7_s. The seventh transistor M7 is coupled between the operating voltage terminal HV and the second node N2 (specifically, the drain of the seventh transistor M7 is coupled to the operating voltage terminal HV, and the third terminal M7_s is coupled to the second node N2). The third control terminal M7_g is coupled to the feedback circuit 151 (specifically, the third control terminal M7_g is coupled to the feedback terminal M6_d of the sixth transistor M6 and the current source A1). The third control terminal M7_g is the gate of the seventh transistor M7, and the third terminal M7_s is the source of the seventh transistor M7. Since the ratio between the input voltage of the source follower circuit (the voltage from the third control terminal M7_g, i.e., the feedback voltage V fb ) and the output voltage V out of the source follower circuit (the voltage from the third terminal M7_s, which is also the voltage of the second node N2) is approximately one (in other words, the amplification factor of the source follower circuit for amplifying the input voltage to the output voltage V out is one or is approximately one), and they are in phase with each other. Therefore, when the feedback voltage V fb rises (i.e., at this time the load rises), the seventh transistor M7 raises the output voltage V out through the third terminal M7_s via its amplification factor (for example, raises the output voltage V out to or close to the feedback voltage V fb ), so as to stabilize the output voltage V out at a voltage level when the load rises; when the feedback voltage V fb falls (i.e., at this time the load falls), the seventh transistor M7 lowers the output voltage V out through the third terminal M7_s via its amplification factor (for example, lowers the output voltage V out to or close to the feedback voltage V fb ), so as to stabilize the output voltage Vout Stable at this voltage level. By this, the output voltage V out Is not affected by the load.

[0053] In some embodiments, when the voltage follower circuit 153 is a source follower circuit, the seventh transistor M7 can be a P-type MOS transistor, and how to properly adjust the architecture of the voltage follower circuit 153 in the above case can be derived according to the disclosure. In some embodiments, when the voltage follower circuit 153 is a emitter follower circuit, the seventh transistor M7 can be a P-type bipolar transistor, and how to properly adjust the architecture of the voltage follower circuit 153 in the above case can be derived according to the disclosure.

[0054] As can be seen from the above, the voltage regulating device 10 is able to generate an output voltage V out that is independent of temperature and load in an integrated circuit with a simple circuit architecture. The operation of the voltage regulating device 10 does not require additional output pins and external components, thus having the advantage of saving circuit area, and since no additional component variability compensation is required, the bandwidth of operation is not limited.

[0055] In summary, according to some embodiments, the voltage regulating device has a simple structure, so that no additional component variability compensation is required, and the bandwidth of operation is not limited (e.g. can operate in high-speed bandwidth). According to some embodiments, by the first ratio (the ratio between the output current and the reference current) and the second ratio (the ratio between the second impedance value and the first impedance value) being inversely proportional to each other, the output voltage is not affected by temperature. According to some embodiments, by the negative feedback circuit adjusting the output voltage, the output voltage is not affected by the load.

[0056]

Symbol Description

[0057] 10: Voltage regulating device

[0058] 11: Reference current generating circuit

[0059] M5: Fifth transistor

[0060] M5_g: First control end

[0061] M5_s: First end

[0062] V ref : Reference voltage

[0063] V gs1 : First potential difference

[0064] R1: First impedance

[0065] I m1 : Reference current

[0066] 13: current mirror circuit

[0067] 131A: first current mirror circuit

[0068] M1: first transistor

[0069] M2: second transistor

[0070] I m3 : mirror current

[0071] 131B: second current mirror circuit

[0072] M3: third transistor

[0073] M4: fourth transistor

[0074] I m2 : output current

[0075] 15: negative feedback circuit

[0076] 151: feedback circuit

[0077] M6: sixth transistor

[0078] M6_g: second control terminal

[0079] M6_s: second terminal

[0080] M6_d: feedback terminal

[0081] V gs2 : second potential difference

[0082] V fb : feedback voltage

[0083] A1: current source

[0084] 153: voltage follower circuit

[0085] M7: seventh transistor

[0086] M7_g: third control terminal

[0087] M7_s: third terminal

[0088] R2: second impedance

[0089] V out : output voltage

[0090] N1: first node

[0091] V1: voltage

[0092] N2: second node

[0093] HV: working voltage terminal

[0094] GND: ground terminal

Claims

1. A voltage regulating device, characterized by, Comprising: a first impedance having a first impedance value; a reference current generating circuit coupled to the first impedance and a reference voltage, the reference current generating circuit having a first potential difference, the reference current generating circuit being configured to generate a reference current based on the reference voltage, the first potential difference, and the first impedance value; a current mirror circuit coupled to the reference current generating circuit and a first node, the current mirror circuit being configured to output an output current to the first node based on the reference current, wherein the output current and the reference current have a first ratio therebetween; a second impedance coupled between the first node and a second node, the second impedance having a second impedance value, the second impedance being configured to generate an output voltage at the second node based on a voltage at the first node, the output current, and the second impedance value, wherein the second impedance value and the first impedance value have a second ratio therebetween, the second ratio being inversely proportional to the first ratio; a negative feedback circuit coupled to the first node and the second node, the negative feedback circuit being configured to generate a feedback voltage based on the voltage at the first node, and adjust the output voltage based on the feedback voltage, wherein the voltage at the first node is substantially equal to the first potential difference, such that the output voltage conforms to the reference voltage. The current mirror circuit comprises:

2. The voltage regulating device of claim 1, wherein, a first current mirror circuit coupled to the reference current generating circuit, the first current mirror circuit being configured to output a mirror current based on the reference current, wherein the mirror current and the reference current have a third ratio therebetween; and a second current mirror circuit coupled to the first current mirror circuit and the first node, the second current mirror circuit being configured to output the output current to the first node based on the mirror current, wherein the output current and the mirror current have a fourth ratio therebetween, the third ratio and the fourth ratio forming the first ratio. The first current mirror circuit comprises a first transistor and a second transistor, wherein the reference current flows through the first transistor and the mirror current flows through the second transistor, wherein the first transistor is a plurality of transistors connected in parallel to each other or the second transistor is a plurality of transistors connected in parallel to each other, the third ratio being determined based on a number of the first transistors and a number of the second transistors.

3. The voltage regulating device of claim 2, wherein, The second current mirror circuit comprises a third transistor and a fourth transistor, wherein the mirror current flows through the third transistor and the output current flows through the fourth transistor, wherein the third transistor is a plurality of transistors connected in parallel to each other or the fourth transistor is a plurality of transistors connected in parallel to each other, the fourth ratio being determined based on a number of the third transistors and a number of the fourth transistors.

4. The voltage regulating device of claim 2, wherein, The reference current is the reference voltage minus the first potential difference divided by the first impedance value.

5. The voltage regulating device of claim 1, wherein, The output voltage is the output current multiplied by the second impedance value plus the voltage at the first node.

6. The voltage regulating device of claim 1, wherein, The current mirror circuit and the negative feedback circuit are further coupled to a working voltage terminal for operation of the current mirror circuit and the negative feedback circuit, and a voltage at the working voltage terminal is greater than the output voltage.

7. The voltage regulating device of claim 1, wherein, The negative feedback circuit comprises:

8. The voltage regulating device of claim 1, wherein, ​ a feedback circuit coupled to the first node to generate the feedback voltage according to the voltage of the first node, wherein when the output voltage rises, the voltage of the first node rises and the feedback voltage falls, and when the output voltage falls, the voltage of the first node falls and the feedback voltage rises; and a voltage follower circuit coupled to the second node and the feedback circuit to raise the output voltage when the feedback voltage rises and to lower the output voltage when the feedback voltage falls.

9. The voltage regulating device of claim 8, wherein, The feedback circuit includes: a sixth transistor including: a second control terminal coupled to the first node; a second terminal, wherein a second potential difference between the second control terminal and the second terminal forms the voltage of the first node; and a feedback terminal coupled to a current source and the voltage follower circuit, wherein the sixth transistor generates the feedback voltage at the feedback terminal according to the voltage of the first node and a current of the current source.

10. The voltage regulating device of claim 8, wherein, The feedback circuit includes: a sixth transistor including: a second control terminal coupled to the first node; and a second terminal, wherein a second potential difference between the second control terminal and the second terminal forms the voltage of the first node, the sixth transistor to generate the feedback voltage according to the voltage of the first node; wherein the reference current generation circuit includes a fifth transistor identical to the sixth transistor, the fifth transistor including a first control terminal and a first terminal, a first potential difference between the first control terminal and the first terminal being substantially identical to the second potential difference.

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