A microphone
By designing the resonant frequency difference of the acoustic structure, the problem of low filtering and frequency division efficiency in the microphone is solved, achieving a high signal-to-noise ratio frequency response, reducing the complexity of the microphone, and improving the sensitivity of the frequency response and signal quality.
Patent Information
- Application Number
- CN202110919048.2
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2021-08-11
- Publication Date
- 2025-12-16
- Estimated Expiration
- 2041-08-11
AI Technical Summary
Traditional filtering and frequency division methods are inefficient and complex in microphones, requiring complex hardware circuit design, high computational resources for software algorithms, and are prone to introducing noise and distortion during signal processing.
By employing an acoustic structure design, filtering and frequency division are achieved through the difference in the resonant frequencies of the acoustic structure, avoiding the complexity of hardware circuits and software algorithms. The signal conditioning and frequency division are performed by utilizing the physical characteristics of the acoustic structure.
It achieves a high signal-to-noise ratio and a flat frequency response curve, reduces the complexity and production cost of the microphone, and improves the sensitivity of the frequency response and signal quality.
Smart Images

Figure CN115706880B_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The present specification relates to the field of acoustic devices, and in particular, to a microphone. BACKGROUND
[0002] Filtering and frequency division techniques have a wide range of applications in signal processing, which are the basis of signal processing techniques such as speech recognition, noise reduction, signal enhancement, etc., and are widely used in the fields of electroacoustics, communication, image coding, echo cancellation, radar sorting, etc. Traditional filtering or frequency division methods are techniques using hardware circuits or software programs. For example, a full-band signal can be collected by a microphone unit, and the signal is filtered by channel using hardware circuits or software algorithms. The hardware circuit realizes filtering or frequency division by designing a band-pass filter or filter bank using electronic components (such as analog electronic components, digital electronic components, etc.), thereby realizing filtering or frequency division. The disadvantage is that the higher the performance of the filter, the more complex the circuit design. Using software algorithms to realize filtering or frequency division means using digital technology to execute related filtering or frequency division programs according to the filtering or frequency division algorithms programmed in the digital signal processing unit (such as DSP, FPGA, CPU, GPU, etc.), thereby realizing filtering or frequency division of the signal. This method requires high computing resources, especially for more complex and superior performance filter algorithms, which will consume more computing resources and time. Digital signal processing is also affected by the sampling frequency, and signal distortion and noise introduction may occur during sampling and processing. Therefore, it is necessary to provide a more efficient signal filtering and / or frequency division device and method to simplify the structure of the microphone, improve the efficiency of sound processing of the microphone, and improve the frequency response sensitivity of the microphone. SUMMARY
[0003] To solve the problems of low filtering and / or frequency division efficiency and complex structure of the microphone, the technical solution of the present specification is as follows:
[0004] The present specification provides a microphone. The microphone can include a first acoustic structure, an acoustic-electric converter, and a second acoustic structure. The first acoustic structure can include a first acoustic guide tube and a first acoustic cavity. The first acoustic structure has a first resonant frequency. The acoustic-electric converter can be configured to convert a sound signal into an electric signal, and the acoustic-electric converter can have a second resonant frequency. The second acoustic structure can include a second acoustic guide tube and a second acoustic cavity, and the second acoustic structure can have a third resonant frequency. The third resonant frequency can be different from the first resonant frequency.
[0005] In some embodiments, the absolute value of the difference between the first resonant frequency or the third resonant frequency and the second resonant frequency can be not less than 100 Hz.
[0006] In some embodiments, the first resonant frequency can be related to a structural parameter of the first acoustic structure, the second resonant frequency can be related to a structural parameter of the acoustic-electric transducer, and the third resonant frequency can be related to a structural parameter of the second acoustic structure.
[0007] In some embodiments, the structural parameter of the first acoustic structure can include a shape of the first acoustic tube, a size of the first acoustic tube, a size of the first acoustic cavity, an acoustic impedance of the first acoustic tube or the first acoustic cavity, a roughness of an inner surface of a sidewall forming the first acoustic tube, or the like, or a combination thereof. The structural parameter of the second acoustic structure can include a shape of the second acoustic tube, a size of the second acoustic tube, a size of the second acoustic cavity, an acoustic impedance of the second acoustic tube or the second acoustic cavity, a roughness of an inner surface of a sidewall forming the second acoustic tube, or the like, or a combination thereof.
[0008] In some embodiments, the acoustic impedance can range from 1 MKS Rayls to 100 MKS Rayls.
[0009] In some embodiments, an aperture of the first acoustic tube can be no more than 2 times a length of the first acoustic tube, and an aperture of the second acoustic tube can be no more than 2 times a length of the second acoustic tube.
[0010] In some embodiments, a roughness of an inner surface of a sidewall forming the first acoustic tube or the second acoustic tube can be no more than 0.8.
[0011] In some embodiments, an inner diameter of the first acoustic cavity or the second acoustic cavity can be no less than a thickness of the first acoustic cavity or the second acoustic cavity.
[0012] In some embodiments, a sensitivity of the microphone in response at the first resonant frequency can be greater than a sensitivity of the acoustic-electric transducer in response at the first resonant frequency. A sensitivity of the microphone in response at the third resonant frequency can be greater than a sensitivity of the acoustic-electric transducer in response at the third resonant frequency.
[0013] In some embodiments, the first acoustic tube can be disposed on a cavity wall constituting the first acoustic cavity, and the second acoustic tube can be disposed on a cavity wall constituting the second acoustic cavity.
[0014] In some embodiments, the acoustic-electric transducer can further include a first hole portion, and the first acoustic cavity can be in acoustic communication with the acoustic-electric transducer through the first hole portion.
[0015] In some embodiments, the first acoustic cavity can be in acoustic communication with the acoustic-to-electrical transducer, the second acoustic cavity can be in acoustic communication with an exterior of the microphone through the second acoustic conduit, and can be in acoustic communication with the first acoustic cavity through the first acoustic conduit.
[0016] In some embodiments, the microphone can further include a third acoustic structure, which can include a third acoustic conduit, a fourth acoustic conduit, and a third acoustic cavity. The first acoustic cavity can be in acoustic communication with an exterior of the microphone through the first acoustic conduit, and can be in acoustic communication with the third acoustic cavity through the third acoustic conduit. The second acoustic cavity can be in acoustic communication with the exterior of the microphone through the second acoustic conduit, and can be in acoustic communication with the third acoustic cavity through the fourth acoustic conduit. The third acoustic cavity can be in acoustic communication with the acoustic-to-electrical transducer. The third acoustic structure can have a fourth resonant frequency, which can be different from the third resonant frequency and the first resonant frequency.
[0017] In some embodiments, the microphone can further include a second acoustic-to-electrical transducer, which can include a second aperture. The second acoustic cavity can be in acoustic communication with an exterior of the microphone through the second acoustic conduit, and can be in acoustic communication with the second acoustic-to-electrical transducer through the second aperture.
[0018] Additional features will be set forth in the description that follows, and in part will be apparent from the description, or can be learned by the practice of the application as hereinafter described, or by practice of the methods, tools, and compositions set forth in the following detailed description. The features of the application can be realized and obtained by means of the instruments and combinations particularly pointed out in the appended claims. BRIEF DESCRIPTION OF DRAWINGS
[0019] The present description will be further illustrated in the manner of exemplary embodiments, which will be described in detail with reference to the accompanying drawings. These embodiments are not restrictive, and in these embodiments, the same numbers denote the same structures, in which:
[0020] Figure 1 is a schematic diagram of an exemplary microphone shown in accordance with some embodiments of the present description;
[0021] Figure 2A is a schematic diagram of an exemplary microphone shown in accordance with some embodiments of the present description;
[0022] Figure 2B is a schematic diagram of an exemplary microphone shown in accordance with some embodiments of the present description;
[0023] Figure 3is a schematic diagram of a frequency response curve of an exemplary microphone shown in accordance with some embodiments of the present specification;
[0024] Figure 4 is a schematic diagram of a frequency response curve of an exemplary microphone shown in accordance with some embodiments of the present specification;
[0025] Figure 5 is a schematic diagram of a frequency response curve of an exemplary microphone shown in accordance with some embodiments of the present specification;
[0026] Figure 6 is a schematic diagram of a frequency response curve of an exemplary microphone shown in accordance with some embodiments of the present specification;
[0027] Figure 7 is a schematic diagram of a frequency response curve of an exemplary microphone shown in accordance with some embodiments of the present specification;
[0028] Figure 8 is a schematic diagram of a frequency response curve of an exemplary microphone shown in accordance with some embodiments of the present specification;
[0029] Figure 9 is a schematic diagram of a frequency response curve of an exemplary microphone shown in accordance with some embodiments of the present specification;
[0030] Figure 10 is a schematic diagram of a frequency response curve of an exemplary microphone shown in accordance with some embodiments of the present specification;
[0031] Figure 11 is a schematic diagram of a frequency response curve of an exemplary microphone shown in accordance with some embodiments of the present specification;
[0032] Figure 12 is a schematic diagram of a frequency response curve of an exemplary microphone shown in accordance with some embodiments of the present specification;
[0033] Figure 13 is a schematic diagram of a frequency response curve of an exemplary microphone shown in accordance with some embodiments of the present specification;
[0034] Figure 14 is a schematic diagram of a frequency response curve of an exemplary microphone shown in accordance with some embodiments of the present specification;
[0035] Figure 15 is a schematic diagram of a frequency response curve of an exemplary microphone shown in accordance with some embodiments of the present specification;
[0036] Figure 16 is a schematic diagram of a frequency response curve of an exemplary microphone shown in accordance with some embodiments of the present specification;
[0037] Figure 17 is a schematic diagram of a frequency response curve of an exemplary microphone shown in accordance with some embodiments of the present specification;
[0038] Figure 18is a schematic diagram of an exemplary microphone shown in accordance with some embodiments of the present specification;
[0039] Figure 19 is a schematic diagram of an exemplary microphone shown in accordance with some embodiments of the present specification;
[0040] Figure 20 is a schematic diagram of an exemplary microphone shown in accordance with some embodiments of the present specification;
[0041] Figure 21 is a frequency response curve of an exemplary microphone shown in accordance with some embodiments of the present specification;
[0042] Figure 22 is a frequency response curve of an exemplary microphone shown in accordance with some embodiments of the present specification. DETAILED DESCRIPTION
[0043] In order to more clearly illustrate the technical solutions of the embodiments of the present specification, the following will briefly introduce the drawings needed to be used in the embodiments description. Obviously, the drawings in the following description are only some examples or embodiments of the present specification, and for those skilled in the art, without paying creative labor, the present specification can also be applied to other similar scenarios according to these drawings. It should be understood that these exemplary embodiments are only given to enable those skilled in the relevant art to better understand and implement the present application, and do not limit the scope of the present application in any way. Unless it is obvious from the language environment or otherwise stated, the same reference numbers in the drawings represent the same structure or operation.
[0044] It should be understood that the "system", "device", "unit" and / or "component", "assembly", "element" used herein is a method for distinguishing different components, elements, components, parts or assemblies at different levels. However, if other words can achieve the same purpose, the words can be replaced by other expressions.
[0045] Various terminology is used to describe spatial and functional relationships between elements (e.g., between components) in the description and claims. Spatial and functional relationships between elements are described using various terms, such as “connected,” “engaged,” “interface,” and “coupled.” Unless explicitly described as being “direct,” a relationship between a first and a second element described in the specification can exist where one or more other elements are interposed between the first and the second element. Conversely, when an element is referred to as being “directly” connected, engaged, interfaced, or coupled to another element, no intervening elements are present. In addition, spatial and functional relationships between elements can be implemented in a variety of ways. For example, a mechanical connection between two elements can include a soldered connection, a keyed connection, a pinned connection, a press-fit connection, or the like, or any combination thereof. Other words used to describe relationships between elements should be interpreted in a like fashion (e.g., “between,” “between...and,” “adjacent,” and “directly adjacent,” etc.).
[0046] It will be understood that the terms “first,” “second,” “third,” etc. as used herein can be used to describe various elements. These are only used to distinguish one element from another, and are not intended to limit the scope of elements. For example, a first element could also be called a second element, and similarly, a second element could also be called a first element.
[0047] As used in the description and the claims, the terms “a,” “an,” and “the” do not exclude a plurality, and “a” or “an” means “one or more” unless otherwise specified. The term “or” means “and / or” unless otherwise specified. Similar to the term “a” or “an,” the term “one” does not exclude a plurality, and “at least one of” a list of items means one or more of the items but not solely one of the items. Only obvious functions of elements are described in detail. The terms “based on” and “in response to” are not exclusive. The term “one embodiment” means “at least one embodiment.” The term “another embodiment” means “at least one additional embodiment.” Other terms are similarly defined. In the following description, the term “microphone” or “microphone” will be used in describing the relevant technology of filtering / dividing in the present application. This description is only one form of conduction application, and for those skilled in the art, “microphone” or “microphone” can also be replaced by other similar terms such as “hydrophone,” “transducer,” “acousto-optic modulator,” or “acoustic-electric conversion device,” etc. For those skilled in the art, after understanding the basic principles of the microphone, various modifications and changes in form and details to the specific way and steps of implementing the microphone can be made without departing from the principles. However, these modifications and changes are still within the scope of protection of the present specification.
[0048] The present specification provides a microphone. The microphone can include at least one acoustic-electric transducer and an acoustic structure. The at least one acoustic-electric transducer can be configured to convert a sound signal into an electric signal. The acoustic structure includes a sound guide tube and an acoustic cavity. The acoustic cavity is in acoustic communication with the acoustic-electric transducer and is in acoustic communication with an outside of the microphone through the sound guide tube. The sound guide tube and the acoustic cavity of the acoustic structure can constitute a filter having a function of adjusting frequency components of a sound signal. This scheme uses structural characteristics of the acoustic structure itself to filter and / or sub-band frequency divide the sound signal, without the need for a large number of complex circuits to implement the filtering, thereby reducing the difficulty of circuit design. The filtering characteristics of the acoustic structure are determined by the physical characteristics of its structure, and the filtering process occurs in real time.
[0049] In some embodiments, the acoustic structure can "amplify" sound at its corresponding resonance frequency. The resonance frequency of the acoustic structure can be adjusted by changing the structural parameters of the acoustic structure. The structural parameters of the acoustic structure can include the shape of the sound guide tube, the size of the sound guide tube, the size of the acoustic cavity, the acoustic resistance of the sound guide tube or the acoustic cavity, the roughness of the inner surface of the side wall of the sound guide tube, the thickness of the sound-absorbing material in the sound guide tube, etc., or a combination thereof.
[0050] In some embodiments, by arranging multiple acoustic structures with different resonance frequencies in parallel, in series, or a combination thereof, the frequency components of the sound signal corresponding to different resonance frequencies can be filtered out respectively, thereby achieving sub-band frequency division of the sound signal. In this case, the frequency response of the microphone can be seen as a high signal-to-noise ratio and more flat frequency response curve formed by the fusion of the frequency responses of different acoustic structures (for example, the frequency response curve 2210 shown in FIG. 22). Figure 22 On the one hand, the microphone provided by the embodiments of the present specification can achieve sub-band frequency division processing of a full-band signal by its own structure without using hardware circuits (for example, filter circuits) or software algorithms, thereby avoiding the problems of complex hardware circuit design, high occupation of computing resources by software algorithms, signal distortion, and noise introduction, and thereby reducing the complexity and production cost of the microphone. On the other hand, the microphone provided by the embodiments of the present specification can output a high signal-to-noise ratio and more flat frequency response curve, thereby improving the signal quality of the microphone. In addition, by arranging different acoustic structures, resonance peaks of different frequency ranges can be added in the microphone system, thereby improving the sensitivity of the microphone near multiple resonance peaks and thereby improving the sensitivity of the microphone in the entire wide frequency band.
[0051] Figure 1 is a schematic diagram of an exemplary microphone according to some embodiments of the present specification. As shown in Figure 1 The microphone 100 can include an acoustic structure 110, at least one acoustic-electric transducer 120, a sampler 130, and a signal processor 140.
[0052] In some embodiments, microphone 100 can include any sound signal processing device that converts sound signals into electrical signals, such as a microphone, hydrophone, acousto-optic modulator, or other acoustoelectric conversion device. In some embodiments, microphone 100 can include a moving-coil microphone, ribbon microphone, condenser microphone, piezoelectric microphone, electret microphone, electromagnetic microphone, carbon microphone, or any combination thereof, distinguished by transduction principle. In some embodiments, microphone 100 can include a bone conduction microphone, air conduction microphone, or combination thereof, distinguished by sound acquisition. In some embodiments, microphone 100 can include an electret microphone, silicon microphone, or the like, distinguished by production process. In some embodiments, microphone 100 can be disposed on a mobile device (e.g., a cell phone, a dictation pen, or the like), a tablet computer, a laptop computer, a vehicle built-in device, a surveillance device, a medical device, sports equipment, a toy, a wearable device (e.g., an earphone, a helmet, glasses, a necklace, or the like), or any device with sound pickup function.
[0053] Acoustic structure 110 can deliver sound signals from the outside world to at least one acoustoelectric transducer 120. Acoustic structure 110 can perform certain adjustments (e.g., filtering, changing the bandwidth of sound signals, amplifying sound signals of certain frequencies, or the like) on sound signals as they pass through acoustic structure 110. In some embodiments, acoustic structure 110 can include a sound guide tube and an acoustic cavity. The acoustic cavity is in acoustic communication with acoustoelectric transducer 120 for delivering sound signals adjusted by acoustic structure 110 to acoustoelectric transducer 120. The acoustic cavity can be in acoustic communication with the outside environment of microphone 100 through the sound guide tube for receiving sound signals. Sound signals can come from any sound source capable of generating audio signals. The sound source can be a living organism (e.g., a user of microphone 100), a non-living organism (e.g., a CD player, a television, a sound system, or the like), or a combination thereof. In some embodiments, sound signals can include environmental sounds.
[0054] In some embodiments, acoustic structure 110 has a first resonant frequency, which means that a frequency component of sound signals at the first resonant frequency will produce resonance, thereby increasing the volume of the frequency component delivered to acoustoelectric transducer 120. Thus, acoustic structure 110 can be configured such that a frequency response curve of microphone 100 generates a resonance peak at the first resonant frequency, thereby increasing the sensitivity of microphone 100 in a certain frequency band containing the first resonant frequency. For the effect of acoustic structure 110 on the frequency response curve of microphone 100, see Figures 2A-22 and related descriptions.
[0055] In some embodiments, the number of acoustic structures 110 in microphone 100 can be set according to actual needs. For example, microphone 100 can include multiple (e.g., 2, 3, 5, 6-24, etc.) acoustic structures 110. In some embodiments, multiple acoustic structures 110 in microphone 100 can have different frequency responses, for example, multiple acoustic structures 110 in microphone 100 can have different resonance frequencies and / or frequency bandwidths. Frequency bandwidth can refer to the frequency range between 3dB points of a frequency response curve. In some embodiments, after being processed by multiple acoustic structures 100, a sound signal can be split into multiple sub-band sound signals (e.g., sub-band sound signal 1111, sub-band sound signal 1112, …, sub-band sound signal 111n) with different frequency band ranges. A sub-band sound signal refers to a signal with a frequency band width smaller than that of the original sound signal. The frequency band of a sub-band sound signal can be within the frequency band range of the sound signal. For example, the frequency band range of a sound signal can be 100Hz-20000Hz, one acoustic structure 110 can be set to filter the sound signal to generate a sub-band sound signal with a frequency band range of 100Hz-200Hz. For another example, 11 acoustic structures 110 can be set to split the sound signal into 11 sub-band sound signals with frequency band ranges of 500Hz-700Hz, 700Hz-1000Hz, 1000Hz-1300Hz, 1300Hz-1700Hz, 1700Hz-2200Hz, 2200Hz-3000Hz, 3000Hz-3800Hz, 3800Hz-4700Hz, 4700Hz-5700Hz, 5700Hz-7000Hz, 7000Hz-12000Hz. For another example, 16 acoustic structures 110 can be set to split the sound signal into 16 sub-band sound signals with frequency band ranges of 500Hz-640Hz, 640Hz-780Hz, 780Hz-930Hz, 940Hz-1100Hz, 1100Hz-1300Hz, 1300Hz-1500Hz, 1500Hz-1750Hz, 1750Hz-1900Hz, 1900Hz-2350Hz, 2350Hz-2700Hz, 2700Hz-3200Hz, 3200Hz-3800Hz, 3800Hz-4500Hz, 4500Hz-5500Hz, 5500Hz-6600Hz, 6600Hz-8000Hz.For another example, 24 acoustic structures 110 can be arranged to split the sound signal into 24 sub-band sound signals, whose frequency band ranges can be 20Hz-120Hz, 120Hz-210Hz, 210Hz-320Hz, 320Hz-410Hz, 410Hz-500Hz, 500Hz-640Hz, 640Hz-780Hz, 780Hz-930Hz, 940Hz-1100Hz, 1100Hz-1300Hz, 1300Hz-1500, 1500Hz-1750, 1750Hz-1900, 1900Hz-2350, 2350Hz-2700Hz, 2700Hz-3200Hz, 3200Hz-3800Hz, 3800Hz-4500Hz, 4500Hz-5500Hz, 5500Hz-6600Hz, 6600Hz-7900Hz, 7900Hz-9600Hz, 9600Hz-12100Hz, 12100Hz-16000Hz. The use of acoustic structures for filtering and splitting can filter and split the sound signal in real time, reduce the introduction of noise in the subsequent hardware processing of the sound signal, and avoid signal distortion.
[0056] In some embodiments, multiple acoustic structures 110 in the microphone 100 can be arranged in parallel, in series, or a combination thereof. Details about the arrangement of multiple acoustic structures can be found in Figures 17-20 and related descriptions.
[0057] The acoustic structure 110 can be connected with the acoustic-electric transducer 120 for transmitting the sound signal adjusted by the acoustic structure 110 to the acoustic-electric transducer 120 to be converted into an electrical signal. In some embodiments, the acoustic-electric transducer 120 can include a condenser acoustic-electric transducer, a piezoelectric acoustic-electric transducer, or the like, or a combination thereof. In some embodiments, the vibration (e.g., air vibration, solid vibration, liquid vibration, magnetostriction, electrostriction, or the like) of the sound signal can cause a change in one or more parameters (e.g., capacitance, charge, acceleration, light intensity, frequency response, or the like, or a combination thereof) of the acoustic-electric transducer 120, and the changed parameter can be detected by an electrical method and output an electrical signal corresponding to the vibration. For example, the piezoelectric acoustic-electric transducer can be an element that converts the change in a non-electric quantity (e.g., pressure, displacement, or the like) to be measured into a change in voltage. For example, the piezoelectric acoustic-electric transducer can include a cantilever beam structure (or a diaphragm structure) that can be deformed under the action of the received sound signal, and the inverse piezoelectric effect caused by the deformed cantilever beam structure can generate an electrical signal. For another example, the condenser acoustic-electric transducer can be an element that converts the change in a non-electric quantity (e.g., displacement, pressure, light intensity, acceleration, or the like) to be measured into a change in capacitance. For example, the condenser acoustic-electric transducer can include a first cantilever beam structure and a second cantilever beam structure that can be deformed to different degrees under vibration, so that the spacing between the first cantilever beam structure and the second cantilever beam structure changes. The first cantilever beam structure and the second cantilever beam structure can convert the change in the spacing between the two into a change in capacitance, thereby realizing the conversion of the vibration signal into an electrical signal. In some embodiments, different acoustic-electric transducers 120 can have the same or different frequency responses. For example, acoustic-electric transducers 120 with different frequency responses can detect the same sound signal, and different acoustic-electric transducers 120 can generate sub-band electrical signals with different resonance frequencies.
[0058] In some embodiments, the number of acoustic-electric transducers 120 can be one or more, for example, the acoustic-electric transducers 120 can include an acoustic-electric transducer 121, an acoustic-electric transducer 122, …, and an acoustic-electric transducer 12n. In some embodiments, one or more of the acoustic-electric transducers 120 can be in communication with the acoustic structure 110 in multiple ways. For example, multiple acoustic structures 110 in the microphone 100 can be connected with the same acoustic-electric transducer 120. For another example, each of the multiple acoustic structures 110 can be connected with an acoustic-electric transducer 120.
[0059] In some embodiments, one or more of the acoustoelectric converters 120 can be configured to convert the sound signals transmitted by the acoustic structures 110 into electrical signals. For example, the acoustoelectric converter 120 can convert the filtered sound signals of the acoustic structures 110 into corresponding electrical signals. For another example, a plurality of the acoustoelectric converters 120 can respectively convert a plurality of the subband sound signals of the acoustic structures 110 into a corresponding plurality of subband electrical signals. By way of example only, the acoustoelectric converter 120 can respectively convert the subband sound signal 1111, the subband sound signal 1112, …, the subband sound signal 111n into the subband electrical signal 1211, the subband electrical signal 1212, …, the subband electrical signal 121n, respectively.
[0060] The acoustoelectric converter 120 can transmit the generated subband electrical signals (or electrical signals) to the sampler 130. In some embodiments, one or more of the subband electrical signals can be transmitted through different parallel line media, respectively. In some embodiments, the plurality of the subband electrical signals can also be outputted in a specific format according to specific protocol rules through a common line medium. In some embodiments, the specific protocol rules can include, but are not limited to, one or more of direct transmission, amplitude modulation, frequency modulation, etc. In some embodiments, the line medium can include, but are not limited to, one or more of coaxial cable, communication cable, flexible cable, spiral cable, non-metallic sheath cable, metallic sheath cable, multi-core cable, twisted pair cable, ribbon cable, shielded cable, telecommunication cable, twin cable, parallel twin-core wire, twisted pair, optical fiber, infrared, electromagnetic wave, acoustic wave, etc. In some embodiments, the specific format can include, but are not limited to, one or more of CD, WAVE, AIFF, MPEG-1, MPEG-2, MPEG-3, MPEG-4, MIDI, WMA, RealAudio, VQF, AMR, APE, FLAC, AAC, etc. In some embodiments, the transmission protocol can include, but are not limited to, one or more of AES3, EBU, ADAT, I2S, TDM, MIDI, CobraNet, Ethernet AVB, Dante, ITU-T G.728, ITU-T G.711, ITU-T G.722, ITU-T G.722.1, ITU-T G.722.1 Annex C, AAC-LD, etc.
[0061] The sampler 130 can be in communication with the acoustoelectric converter 120 for receiving one or more of the subband electrical signals generated by the acoustoelectric converter 120 and sampling the one or more of the subband electrical signals to generate corresponding digital signals.
[0062] In some embodiments, the sampler 130 can include one or more samplers (e.g., sampler 131, sampler 132, …, sampler 13n). Each sampler can sample each subband electrical signal. For example, the sampler 131 can sample the subband electrical signal 1211 to generate a digital signal 1311. For another example, the sampler 132 can sample the subband electrical signal 1212 to generate a digital signal 1312. For yet another example, the sampler 13n can sample the subband electrical signal 121n to generate a digital signal 131n.
[0063] In some embodiments, the sampler 130 can sample the subband electrical signals using a bandpass sampling technique. For example, the sampling frequency of the sampler 130 can be configured according to the frequency bandwidth (3dB) of the subband electrical signals. In some embodiments, the sampler 130 can sample a subband electrical signal with a sampling frequency that is not less than twice the highest frequency in the subband electrical signal. In some embodiments, the sampler 130 can sample a subband electrical signal with a sampling frequency that is not less than twice the highest frequency in the subband electrical signal and not more than four times the highest frequency in the subband electrical signal. Compared with traditional sampling methods (e.g., bandwidth sampling technique, low-pass sampling technique, etc.), using the bandpass sampling technique, the sampler 130 can sample with a relatively low sampling frequency, thereby reducing the difficulty and cost of the sampling process.
[0064] In some embodiments, the size of the sampling frequency of the sampler 130 can affect the cutoff frequency of the sampling of the sampler 130. In some embodiments, the larger the sampling frequency, the higher the cutoff frequency, the larger the range of the sampleable frequency band, and the lower the frequency resolution corresponding to the same number of Fourier transform points when the signal processor 140 processes the digital signals generated by the sampler 130. Therefore, for subband electrical signals located in different frequency ranges, the sampler 130 can use different sampling frequencies for sampling. For example, for subband electrical signals located in a low frequency range (e.g., subband electrical signals with a frequency less than a first frequency threshold), the sampler 130 can use a lower sampling frequency, thereby making the cutoff frequency of the sampling lower. For another example, for subband electrical signals with a frequency range located in a medium-high frequency range (e.g., subband electrical signals with a frequency greater than a second frequency threshold and less than a third frequency threshold), the sampler 130 can use a higher sampling frequency, thereby making the cutoff frequency of the sampling relatively higher. For yet another example, the sampling cutoff frequency of the sampler 130 can be 0Hz-500Hz higher than the 3dB bandwidth frequency point frequency of the resonant frequency of the subband.
[0065] The sampler 130 can transmit the generated one or more digital signals to the signal processor 140. The transmission of the one or more digital signals can be transmitted separately through different parallel line media. In some embodiments, the one or more digital signals can also share one line media and be transmitted in a specific format according to specific protocol rules. The transmission of the digital signals can be referred to the transmission of the sub-band electrical signals.
[0066] The signal processor 140 can receive and process data from other components of the microphone 100. For example, the signal processor 140 can process the digital signals transmitted from the sampler 130. In some embodiments, the signal processor 140 can process each sub-band electrical signal transmitted from the sampler 130 to generate a corresponding digital signal. For example, different sub-band electrical signals (e.g., sub-band electrical signals processed by different acoustic structures, transducers, etc.) can have different phases, corresponding frequencies, etc., and the signal processor 140 can process each sub-band electrical signal. In some embodiments, the signal processor 140 can obtain multiple sub-band electrical signals from the sampler 130 and process (e.g., fusion process) the multiple sub-band electrical signals to generate a wideband signal of the microphone 100.
[0067] In some embodiments, the signal processor 140 can also include one or more of an equalizer, a dynamic range controller, a phase processor, etc. In some embodiments, the equalizer can be configured to perform gain and / or attenuation on the digital signals outputted by the sampler 130 according to specific frequency bands (e.g., frequency bands corresponding to the digital signals). Gain on the digital signals refers to increasing the signal amplification amount; attenuation on the digital signals refers to decreasing the signal amplification amount. In some embodiments, the dynamic range controller can be configured to compress and / or amplify the digital signals. Compression and / or amplification on the sub-band electrical signals refers to decreasing and / or increasing the ratio between the input signal and the output signal in the microphone 100. In some embodiments, the phase processor can be configured to adjust the phase of the digital signals. In some embodiments, the signal processor 140 can be located inside the microphone 100. For example, the signal processor 140 can be located in an acoustic cavity formed independently from the housing structure of the microphone 100. In some embodiments, the signal processor 140 can also be located in other electronic devices, such as one or any combination of a headset, a mobile device, a tablet, a laptop, etc. In some embodiments, the mobile device can include, but is not limited to, a mobile phone, a smart home device, a smart mobile device, etc., or any combination thereof. In some embodiments, the smart home device can include a control device of a smart appliance, a smart monitoring device, a smart television, a smart camera, etc., or any combination thereof. In some embodiments, the smart mobile device can include a smart phone, a personal digital assistant (PDA), a gaming device, a navigation device, a POS device, etc., or any combination thereof.
[0068] The above description of the microphone 100 is for illustrative purposes only and is not intended to limit the scope of the present specification. Various changes and modifications can be made to the microphone 100 according to the description of the present specification by those of ordinary skill in the art. For example, the sampler 130 and the signal processor 140 can be integrated in one component (e.g., an application specific integrated circuit (ASIC)). These changes and modifications are still within the protection scope of the present specification.
[0069] Figure 2A is a schematic diagram of an exemplary microphone according to some embodiments of the present specification. As shown in Figure 2A The microphone 200 can include a housing 210, at least one acoustic-to-electric converter 220, and an acoustic structure 230.
[0070] The housing 210 can be configured to house one or more components of the microphone 200 (e.g., the at least one acoustic-to-electric converter 220, at least a portion of the acoustic structure 230, etc.). In some embodiments, the housing 210 can be a regular structure such as a cuboid, a cylinder, a prism, a circular truncated cone, or other irregular structure. In some embodiments, the housing 210 is an internally hollow structure that can form one or more acoustic cavities, e.g., the acoustic cavity 231 and the acoustic cavity 240. The acoustic cavity 240 can house the acoustic-to-electric converter 220 and the application specific integrated circuit 250. The acoustic cavity 231 can house or be at least a portion of the acoustic structure 230. In some embodiments, the housing 210 can include only one acoustic cavity. As an example, Figure 2B is a schematic diagram of an exemplary microphone according to some embodiments of the present specification. The housing 210 of the microphone 205 can form the acoustic cavity 240. One or more components of the microphone 205, e.g., the acoustic-to-electric converter 220, the application specific integrated circuit 250, and at least a portion of the acoustic structure 230 (e.g., the acoustic cavity 231), can be located in the acoustic cavity 231. In this case, the acoustic cavity 240 formed by the housing 210 can coincide with the acoustic cavity 231 of the acoustic structure 230. The acoustic structure 230 can be in direct acoustic communication with the acoustic-to-electric converter 220. The direct acoustic communication between the acoustic structure 230 and the acoustic-to-electric converter 220 can be understood as that the acoustic-to-electric converter 220 can include a “front cavity” and a “back cavity”, and the sound signals in the “front cavity” or the “back cavity” can cause a change in one or more parameters of the acoustic-to-electric converter 220. Figure 2A In the microphone 200 shown, the sound signals pass through the acoustic structure 230 (e.g., the sound guide tube 232 and the acoustic cavity 231) and then through the hole portion 221 of the acoustic-to-electric converter 220 to the “back cavity” of the acoustic-to-electric converter 220, causing a change in one or more parameters of the acoustic-to-electric converter 220. Figure 2BIn the illustrated microphone 205, the acoustic cavity 240 formed by the housing 210 coincides with the acoustic cavity 231 of the acoustic structure 230, and the "front cavity" of the acoustical-electrical transducer 220 can be considered to coincide with the acoustic cavity 231 of the acoustic structure. After the sound signal passes through the acoustic structure 230, it directly causes a change in one or more parameters of the acoustical-electrical transducer 220. For the convenience of description, the present specification mainly describes an example in which the acoustic cavity 231 and the acoustic cavity 240 do not coincide (as illustrated in FIG. 2A), and the acoustic cavity 231 and the acoustic cavity 240 coincide can be the same or similar. Figure 2A In the illustrated microphone 205, the acoustic cavity 240 formed by the housing 210 coincides with the acoustic cavity 231 of the acoustic structure 230, and the "front cavity" of the acoustical-electrical transducer 220 can be considered to coincide with the acoustic cavity 231 of the acoustic structure. After the sound signal passes through the acoustic structure 230, it directly causes a change in one or more parameters of the acoustical-electrical transducer 220. For the convenience of description, the present specification mainly describes an example in which the acoustic cavity 231 and the acoustic cavity 240 do not coincide (as illustrated in FIG. 2A), and the acoustic cavity 231 and the acoustic cavity 240 coincide can be the same or similar.
[0071] In some embodiments, the material of the housing 210 can include, but is not limited to, one or more of metal, alloy material, polymer material (for example, acrylonitrile-butadiene-styrene copolymer, polyvinyl chloride, polycarbonate, polypropylene, etc.), and the like.
[0072] In some embodiments, the at least one acoustical-electrical transducer 220 can be configured to convert a sound signal into an electrical signal. The at least one acoustical-electrical transducer 220 can include one or more apertures 221. The acoustic structure 230 can be in communication with the at least one acoustical-electrical transducer 220 through the one or more apertures 221 of the acoustical-electrical transducer 220, and transmit the sound signal adjusted by the acoustic structure 230 to the acoustical-electrical transducer 220. For example, the external sound signal picked up by the microphone 200 can enter the cavity (if any) of the acoustical-electrical transducer 220 through the aperture 221 after being adjusted (for example, filtered, frequency divided, amplified, etc.) by the acoustic structure 230. The acoustical-electrical transducer 220 can pick up the sound signal and convert it into an electrical signal.
[0073] In some embodiments, the acoustic structure 230 can include an acoustic cavity 231 and a sound guide tube 232. The acoustic structure 230 can be in communication with the outside of the microphone 200 through the sound guide tube 232. In some embodiments, the housing 210 can include a plurality of side walls for forming a space inside the housing. The sound guide tube 232 can be located on the first side wall 211 of the housing 210 for forming the acoustic cavity 231. Specifically, the first end (for example, the end close to the acoustic cavity 231) of the sound guide tube 232 can be located on the first side wall 211 of the housing 210, and the second end (for example, the end relatively far away from the acoustic cavity 231) of the sound guide tube 232 can be away from the first side wall 211 and located outside the housing 210. The external sound signal can enter the sound guide tube 232 from the second end of the sound guide tube 232, and be transmitted to the acoustic cavity 231 from the first end of the sound guide tube 232. In some embodiments, the sound guide tube 232 of the acoustic structure 230 can also be arranged at other suitable positions. For the arrangement of the sound guide tube, please refer to Figures 5 to 9 and the related description thereof.
[0074] In some embodiments, the acoustic structure 230 can have a first resonant frequency, i.e., a component of the sound signal at the first resonant frequency can resonate within the acoustic structure 230. In some embodiments, the first resonant frequency is related to the structural parameters of the acoustic structure 230. The structural parameters of the acoustic structure 230 can include the shape of the sound guide tube 232, the size of the sound guide tube 232, the size of the acoustic cavity 231, and the acoustic impedance of the sound guide tube 232 or the acoustic cavity 231, the roughness of the inner surface of the sidewall of the sound guide tube 232, the thickness of the sound-absorbing material (e.g., fiber material, foam material, etc.) in the sound guide tube, the stiffness of the inner wall of the acoustic cavity, etc., or a combination thereof. In some embodiments, by setting the structural parameters of the acoustic structure 230, the sound signal adjusted by the acoustic structure 230 can have a resonance peak at the first resonant frequency after being converted into an electrical signal.
[0075] The shape of the sound guide tube 232 can include regular and / or irregular shapes such as a cuboid, a cylinder, a polygonal prism, etc. In some embodiments, the sound guide tube 232 can be formed by one or more sidewalls. The shape of the sidewall 233 of the sound guide tube 232 can be a cuboid, a cylinder, etc. regular and / or irregular structure. In some embodiments, as shown in FIG. 2A, the length of the sidewall 233 of the sound guide tube 232 along the X-axis direction (e.g., the length of the sidewall 233 along the X-axis direction) can be the same as the length of the sound guide tube 232 along the X-axis direction. Figure 3 Figure 2A In some embodiments, the length of the sidewall 233 of the sound guide tube 232 along the X-axis direction and the aperture of the sound guide tube 232 can be the same as the length of the housing 210 along the X-axis direction. In some embodiments, the length of the sidewall 233 of the sound guide tube 232 can be different from the length of the housing 210. For example, the length of the sidewall 233 of the sound guide tube 232 along the X-axis direction can be greater than the length of the housing 210 along the X-axis direction. Figure 3 FIG. 2B is a schematic diagram of an exemplary microphone according to some embodiments of the present disclosure, as shown in FIG. 2A. Figure 3 As shown in FIG. 2A, the first end of the sound guide tube 232 is located on the first sidewall 211 of the housing 210, and the second end of the sound guide tube 232 is away from the first sidewall 211 and located outside the housing 210. The length of the aperture sidewall 233 of the sound guide tube 232 along the X-axis direction is less than the length of the housing 210 along the X-axis direction.
[0076] The structural parameters of the aperture of the sound guide tube 232, the length, etc., the inner diameter, the length, the thickness, etc. of the acoustic cavity 231 can be set as needed (e.g., target resonant frequency, target frequency bandwidth, etc.). The length of the sound guide tube refers to the total length of the sound guide tube 232 along the central axis direction of the sound guide tube (e.g., the Y-axis direction in FIG. 2A). Figure 2A In some embodiments, the length of the sound guide tube 232 can be the equivalent length of the sound guide tube, that is, the length of the sound guide tube along the central axis direction plus the product of the diameter of the sound guide tube and the length correction coefficient. As shown in FIG. 2B, the length of the sound guide tube 232 along the Y-axis direction is less than the length of the housing 210 along the Y-axis direction. Figure 2A As shown in FIG. 2, the length of the acoustic cavity 231 refers to the dimension of the acoustic cavity 231 along the X-axis direction. The thickness of the acoustic cavity 231 refers to the dimension of the acoustic cavity 231 along the Y-axis direction. In some embodiments, the aperture of the sound guide tube 232 can be no more than 2 times the length of the sound guide tube 232. In some embodiments, the aperture of the sound guide tube 232 can be no more than 1.5 times the length of the sound guide tube 232. For example, when the cross section of the sound guide tube 232 (e.g., the cross section perpendicular to the central axis direction of the sound guide tube (e.g., the cross section parallel to the XZ plane)) is circular, the aperture of the sound guide tube 232 can be in the range of 0.5-10 mm, and the length of the sound guide tube 232 can be in the range of 1-8 mm. For another example, when the cross section of the sound guide tube 232 is circular, the aperture of the sound guide tube 232 can be in the range of 1-4 mm, and the length of the sound guide tube 232 can be in the range of 1-10 mm. In some embodiments, the inner diameter of the acoustic cavity 231 can be no less than the thickness of the acoustic cavity 231. In some embodiments, the inner diameter of the acoustic cavity 231 can be no less than 0.8 times the thickness of the acoustic cavity 231. For example, when the cross section of the acoustic cavity 231 perpendicular to the length direction thereof (e.g., the cross section of the acoustic cavity 231 along the plane parallel to the YZ plane) is circular, the inner diameter of the acoustic cavity 231 can be in the range of 1-20 mm, and the thickness of the acoustic cavity 231 can be in the range of 1-20 mm. In some embodiments, when the cross section of the acoustic cavity 231 is circular, the inner diameter of the acoustic cavity 231 can be in the range of 1-15 mm, and the thickness of the acoustic cavity 231 can be in the range of 1-10 mm.
[0077] It should be noted that the cross-sectional shape of the acoustic cavity 231 and / or the sound guide tube 232 is not limited to the circular shape described above, but can also be other shapes, such as rectangular, elliptical, pentagonal, etc. In some embodiments, when the cross-sectional shape of the acoustic cavity 231 and / or the sound guide tube 232 is other shapes (non-circular), the inner diameter of the acoustic cavity 231 and / or the aperture (or thickness, length) of the sound guide tube 232 can be equivalent to the equivalent inner diameter or the equivalent aperture. Taking the equivalent inner diameter as an example, the acoustic cavity 231 with other cross-sectional shapes can be represented by the inner diameter of the acoustic cavity and / or the sound guide tube with a circular cross-sectional shape and the same volume. For example, when the cross section of the acoustic cavity 231 is square, the equivalent inner diameter of the acoustic cavity 231 can be in the range of 1-6 mm, and the thickness of the acoustic cavity 231 can be in the range of 1-4 mm. For another example, when the cross section of the acoustic cavity 231 is square, the equivalent inner diameter of the acoustic cavity 231 can be in the range of 1-5 mm, and the thickness of the acoustic cavity 231 can be in the range of 1-3 mm.
[0078] In some embodiments, the sidewall 233 of the sound guide tube 232 can be made of one or more materials. The material of the sidewall 233 can include, but is not limited to, one or more of a semiconductor material, a metallic material, a metal alloy, an organic material, and the like. In some embodiments, the semiconductor material can include, but is not limited to, silicon, silicon dioxide, silicon nitride, silicon carbide, and the like. In some embodiments, the metallic material can include, but is not limited to, copper, aluminum, chromium, titanium, gold, and the like. In some embodiments, the metal alloy can include, but is not limited to, a copper-aluminum alloy, a copper-gold alloy, a titanium alloy, an aluminum alloy, and the like. In some embodiments, the organic material can include, but is not limited to, polyimide (PI), Parylene, polydimethylsiloxane (PDMS), silicone gel, silicone rubber, and the like.
[0079] The above description of the microphone 200 is for illustrative purposes only and is not intended to limit the scope of the present specification. Various changes and modifications can be made by one of ordinary skill in the art according to the description of the present specification. These changes and modifications are still within the scope of protection of the present specification.
[0080] Figure 4 is a schematic diagram of frequency response curves of an exemplary microphone according to some embodiments of the present specification. As shown in Figure 4 the frequency response curve 410 is a frequency response curve of an acoustic-electric transducer (e.g., the acoustic-electric transducer 220), and the frequency response curve 420 is a frequency response curve of an acoustic structure (e.g., the acoustic structure 230). When the frequency response curve 410 has a resonance peak at a frequency f0, the frequency f0may be referred to as a resonance frequency of the acoustic-electric transducer (may also be referred to as a second resonance frequency). In some embodiments, the resonance frequency of the acoustic-electric transducer is related to a structural parameter of the acoustic-electric transducer. The structural parameter of the acoustic-electric transducer can include a size, a mass, a type, an arrangement, and the like of the acoustic-electric transducer (e.g., the acoustic-electric transducer 220).
[0081] At the frequency f1of the frequency response curve 420, the acoustic structure resonates with the received sound signal, such that the sound signal contains a band signal of the frequency f1amplified, and the frequency f1resonated can be referred to as a resonance frequency of the acoustic structure (may also be referred to as a first resonance frequency). The resonance frequency of the acoustic structure can be expressed as equation (1):
[0082]
[0083] where f represents the resonance frequency of the acoustic structure, c0represents the speed of sound in air, S represents the cross-sectional area of the sound guide tube, l represents the length of the sound guide tube, and V represents the volume of the acoustic cavity.
[0084] According to equation (1), the resonance frequency of the acoustic structure is related to the cross-sectional area of the sound guide tube, the length of the sound guide tube, and the volume of the acoustic cavity. Specifically, the resonance frequency of the acoustic structure is positively related to the cross-sectional area of the sound guide tube, and is negatively related to the length of the sound guide tube and / or the volume of the acoustic cavity. The resonance frequency of the acoustic structure can be adjusted by setting the structural parameters of the acoustic structure, such as the shape of the sound guide tube, the size of the sound guide tube, the volume of the acoustic cavity, or a combination thereof. For example, in the case where the length of the sound guide tube and the volume of the acoustic cavity are fixed, the resonance frequency of the acoustic structure can be reduced by reducing the cross-sectional area of the sound guide tube, for example, by reducing the aperture of the sound guide tube. For another example, in the case where the cross-sectional area of the sound guide tube and the length of the sound guide tube are fixed, the resonance frequency of the acoustic structure can be increased by reducing the volume of the acoustic cavity. For yet another example, in the case where the cross-sectional area and the length of the sound guide tube are fixed, the resonance frequency of the acoustic structure can be reduced by increasing the volume of the acoustic cavity.
[0085] In some embodiments, in order to improve the response of the microphone to the sound signal in a lower frequency range, the structural parameters of the acoustic structure can be set such that the first resonance frequency f1 is less than the second resonance frequency f0. In some embodiments, in order to keep the frequency response of the microphone flat in a larger frequency range, the structural parameters of the acoustic structure can be set such that the difference between the first resonance frequency f1 and the second resonance frequency f0 is not less than a frequency threshold. The frequency threshold can be determined according to actual needs, for example, the frequency threshold can be set to 5 Hz, 10 Hz, 100 Hz, 1000 Hz, etc. In some embodiments, the first resonance frequency f1 can be greater than or equal to the second resonance frequency f0, so that the sensitivity of the frequency response of the microphone can be improved in different frequency ranges.
[0086] In some embodiments, after the sound signal is adjusted by the acoustic structure, the sound signal in a certain frequency band range containing the first resonance frequency f1 is amplified, so that the sensitivity of the overall response of the microphone at the first frequency f1 is greater than the sensitivity of the response of the sound-electric converter at the first frequency, thereby improving the sensitivity and Q value of the microphone near the first resonance frequency (for example, the improvement of the sensitivity of the microphone at the frequency f1 can be represented by the ratio of the sensitivity of the microphone at the frequency f1 to the sensitivity of the microphone at the frequency f0). Figure 4In some embodiments, the microphone can have a sensitivity increase of 5dBV-40dBV in different frequency ranges by setting the acoustic structure in the microphone compared to the sensitivity of the acoustic-electric transducer. In some embodiments, the microphone can have a sensitivity increase of 10dBV-20dBV in different frequency ranges by setting the acoustic structure in the microphone. In some embodiments, the sensitivity increase of the microphone in different frequency ranges can be different. For example, the higher the frequency, the greater the sensitivity increase of the microphone in the corresponding frequency range. In some embodiments, the sensitivity increase of the microphone can be represented by the slope change of the sensitivity in the frequency range. In some embodiments, the slope change of the sensitivity of the microphone in different frequency ranges can be in the range of 0.0005dBV / Hz-0.005dBV / Hz. In some embodiments, the slope change of the sensitivity of the microphone in different frequency ranges can be in the range of 0.001dBV / Hz-0.003dBV / Hz. In some embodiments, the slope change of the sensitivity of the microphone in different frequency ranges can be in the range of 0.002dBV / Hz-0.004dBV / Hz.
[0087] In some embodiments, the bandwidth of the frequency response curve of the acoustic structure at the first resonance frequency can be represented by equation (2):
[0088]
[0089] where Δf represents the bandwidth of the frequency response of the acoustic structure, f represents the resonance frequency of the acoustic structure, R' a represents the total acoustic resistance of the sound guide tube (including the acoustic resistance and radiation acoustic resistance of the sound guide tube), M' a represents the total acoustic mass of the sound guide tube (including the acoustic mass and radiation acoustic mass of the sound guide tube), W r represents the resonance circular frequency of the acoustic structure, and f represents the resonance frequency of the acoustic structure.
[0090] According to equation (2), when the resonance frequency of the acoustic structure is determined, the bandwidth of the acoustic structure can be adjusted by adjusting the acoustic resistance of the sound guide tube. In some embodiments, an acoustic resistance structure can be provided in the microphone, and the acoustic resistance value of the acoustic resistance structure can be adjusted by adjusting the aperture, thickness, and opening rate of the acoustic resistance structure, thereby adjusting the bandwidth of the acoustic structure. Details of the acoustic resistance structure can be referred to in Figures 10-16 and related descriptions.
[0091] In some embodiments, the acoustic resistance of the sound guide tube can be adjusted by adjusting the inner surface roughness of the sidewall of the sound guide tube, so as to adjust the frequency bandwidth of the frequency response curve of the acoustic structure. In some embodiments, the inner surface roughness of the sidewall of the sound guide tube can be less than or equal to 0.8. In some embodiments, the inner surface roughness of the sidewall of the sound guide tube can be less than or equal to 0.4. Taking the 3dB frequency bandwidth of the frequency response curve of the microphone as an example, by adjusting the structural parameters of the acoustic structure, the 3dB frequency bandwidth of the frequency response curve of the microphone can be 100Hz-1500Hz. In some embodiments, by adjusting the inner surface roughness of the sidewall of the sound guide tube corresponding to different acoustic structures, the microphone can have different increasing amounts of 3dB frequency bandwidth at different resonance frequencies. For example, by adjusting the inner surface roughness of the sidewall of the sound guide tube corresponding to different acoustic structures, the higher the resonance frequency of the acoustic structure, the greater the increasing amount of 3dB frequency bandwidth of the microphone at the corresponding resonance frequency. In some embodiments, the increasing amount of 3dB frequency bandwidth of the microphone at different resonance frequencies can be represented by the slope change of the frequency bandwidth. In some embodiments, the slope change of the 3dB frequency bandwidth of the microphone in the frequency range can be in the range of 0.01Hz / Hz-0.1Hz / Hz. In some embodiments, the slope change of the 3dB frequency bandwidth of the microphone in the frequency range can be in the range of 0.05Hz / Hz-0.1Hz / Hz.
[0092] In some embodiments, the slope change of the 3dB frequency bandwidth of the microphone in the frequency range can be in the range of 0.02Hz / Hz-0.06Hz / Hz.
[0093] In some embodiments, the amplification factor (which can also be referred to as gain) of the acoustic structure to the sound pressure of the sound signal can be represented by formula (3):
[0094]
[0095] wherein A P is the sound pressure amplification factor, l0 is the length of the sound guide tube, s is the cross-sectional area of the sound guide tube, and V is the volume of the acoustic cavity.
[0096] According to formula (3), the sound pressure amplification factor of the acoustic structure to the sound signal is related to the length of the sound guide tube, the cross-sectional area of the sound guide tube, and the volume of the acoustic cavity. Specifically, the sound pressure amplification factor of the acoustic structure to the sound signal is positively correlated with the length of the sound guide tube and the volume of the acoustic cavity, and is negatively correlated with the cross-sectional area of the sound guide tube.
[0097] According to formula (1), formula (3) can also be transformed into formula (4):
[0098]
[0099] wherein A P represents a sound pressure amplification factor, c0represents a sound speed in air, l represents a length of the sound guide tube, f represents a resonance frequency of the acoustic structure, and R represents a radius of the acoustic cavity.
[0100] As can be seen from equation (4), under the condition that other conditions (e.g., the length of the sound guide tube, the radius of the acoustic cavity, etc.) are constant, the sound pressure amplification factor A p of the acoustic structure is related to the resonance frequency f of the acoustic structure, specifically, the sound pressure amplification factor A p is negatively related to the resonance frequency f of the acoustic structure, the smaller the resonance frequency f, the larger the sound pressure amplification factor A p , and vice versa. That is, the acoustic structure has a relatively larger amplification factor for the sound signal at a relatively lower resonance frequency (e.g., a resonance frequency in a mid-low frequency band). The resonance frequency, the frequency band width, the amplification factor for a specific frequency component in the sound signal, the sensitivity increment, the Q value, etc. of the microphone can be changed by setting the parameters of the acoustic structure. The parameters of the acoustic structure can include the shape of the sound guide tube, the size of the sound guide tube, the size of the acoustic cavity, the acoustic resistance of the sound guide tube or the acoustic cavity, the roughness of the inner surface of the side wall of the sound guide tube, the thickness of the sound-absorbing material in the sound guide tube, etc. or a combination thereof.
[0101] Figure 5 is a schematic diagram of an exemplary microphone according to some embodiments of the present specification. As Figure 5 shown, the microphone 500 can include a housing 510, at least one acoustic-electric transducer 520, and an acoustic structure 530. Figure 5 One or more components of the microphone 500 shown can be the same as or similar to one or more components in the microphone 200. For example, the housing 510, the acoustic-electric transducer 520, the hole portion 521 of the acoustic-electric transducer 520, the acoustic cavity 540, the application-specific integrated circuit 550, etc. in the microphone 500 can be the same as or similar to the housing 210, the acoustic-electric transducer 220, the hole portion 221 of the acoustic-electric transducer 220, the acoustic cavity 240, the application-specific integrated circuit 250, etc. in the microphone 200 shown. Figure 3 The shape and / or position of the sound guide tube 532 in the acoustic structure 530 of the microphone 500 are different from those of the acoustic structure 230 of the microphone 200.
[0102] As Figure 5As shown, the acoustic structure 530 can include an acoustic cavity 531 and a sound guide tube 532. The acoustic cavity 531 can be in acoustic communication with the acoustic-electric transducer 520 through the hole 521 of the acoustic-electric transducer 520. The acoustic cavity 531 can be in acoustic communication with the outside of the microphone 500 through the sound guide tube 532. The first end of the sound guide tube 532 is located on the first side wall 511 of the housing 510, the second end of the sound guide tube 532 is located in the acoustic cavity 531, and the side wall 533 of the sound guide tube 532 extends from the first side wall 511 to the inside of the acoustic cavity 531. The external sound signal enters the inside of the sound guide tube 532 from the first end of the sound guide tube 532 and is transmitted to the acoustic cavity 531 from the second end of the sound guide tube 532. By setting the second end of the sound guide tube 532 to extend into the acoustic cavity 531, the length of the sound guide tube 532 and the volume of the acoustic cavity 531 can be increased without increasing the size of the microphone 500. According to formula (1), increasing the length of the sound guide tube 532 and the volume of the acoustic cavity 531 can reduce the resonance frequency of the acoustic structure 530, so that the frequency response curve of the microphone 500 has a resonance peak at a relatively low resonance frequency.
[0103] In some embodiments, the resonance frequency of the acoustic structure 530 can be further adjusted by setting the length, shape, etc. of the sound guide tube 532. For example, Figure 6 is a schematic diagram of an exemplary microphone according to some embodiments of the present disclosure. As shown, Figure 6 The sound guide tube 532 is a straight bending structure, the first end of the sound guide tube 532 is located on the first side wall 511 of the housing 510, the second end of the sound guide tube 532 is located in the acoustic cavity 531, and the side wall 533 of the sound guide tube 532 extends from the first side wall 511 to the inside of the acoustic cavity 531. By setting the sound guide tube 532 to be curved, the length of the sound guide tube 532 can be increased without significantly reducing the size of the acoustic cavity 531, so that the resonance frequency of the acoustic structure 530 can be reduced, and the sensitivity and Q value of the response of the microphone 500 in the lower frequency range can be improved. In some embodiments, the structure of the sound guide tube 532 is not limited to the straight structure (for example, Figure 5 ), the straight bending structure (for example, Figure 6 ), but can also be other types of structures, for example, an arc bending structure can be designed to reduce acoustic resistance, etc. In some embodiments, in order to adjust the acoustic resistance, the included angle between two sections of the sound guide tube can be adjusted. For example, the included angle between the center lines of the two tubes can be in the range of 60°-150°, for example, the included angle between the center lines of the two tubes can be in the range of 60°-90°. For example, the included angle between the center lines of the two tubes can be in the range of 90°-120°. The included angle between the center lines of the two tubes can be in the range of 120°-150°.
[0104] In some embodiments, a first end of the sound guide tube 532 can be located outside of the housing 510 distal from the first side wall 511, a second end of the sound guide tube 532 can be located inside the acoustic cavity 531, and a side wall 533 of the sound guide tube 532 can extend from the side wall 511 of the housing 510 into the acoustic cavity 531. By way of example only, Figure 7 is a schematic diagram of an example microphone shown in accordance with some embodiments of the present specification. As shown in Figure 7 , the sound guide tube 532 of the microphone 500 extends through the first side wall 511 of the housing 510, a first end of the sound guide tube 532 extends outside of the housing 510 distal from the first side wall 511, and a second end of the sound guide tube 532 extends inside the acoustic cavity 531 distal from the first side wall 511, the second end of the sound guide tube 532 being located inside the acoustic cavity 531. An external sound signal can enter the sound guide tube 532 from the first end of the sound guide tube 532 and be transmitted from the second end of the sound guide tube 532 to the acoustic cavity 531.
[0105] Figure 8 is a schematic diagram of an example microphone shown in accordance with some embodiments of the present specification. As shown in Figure 8 , the microphone 800 can include a housing 810, at least one acoustic-electric transducer 820, and an acoustic structure 830. Figure 8 One or more components of the microphone 800 shown in Figure 5 may be the same as or similar to one or more components of the microphone 500 shown in . For example, the housing 810, the acoustic-electric transducer 820, the hole 821 of the acoustic-electric transducer 820, the acoustic cavity 840, the application-specific integrated circuit 850, etc. of the microphone 800 can be the same as or similar to the housing 510, the acoustic-electric transducer 520, the hole 521 of the acoustic-electric transducer 520, the acoustic cavity 540, the application-specific integrated circuit 550, etc. of the microphone 500. The microphone 800 differs from the microphone 500 in the location and / or shape of the sound guide tube 832 of the acoustic structure 830.
[0106] Figure 8As shown, acoustic structure 830 can include acoustic cavity 831 and acoustic waveguide 832. Acoustic waveguide 832 can include one or more sidewalls to form acoustic waveguide 832, such as sidewall 833 and sidewall 834. In some embodiments, sidewall 833 and sidewall 834 can be one integral or the same sidewall of acoustic waveguide 832. For example, sidewall 833 and sidewall 834 can be integrally formed. In some embodiments, sidewall 833 and sidewall 834 can be independent structures from each other. In some embodiments, one or more sidewalls of acoustic waveguide 832 can form an angle with respect to central axis 835 of acoustic waveguide 832. Take sidewall 833 as an example, sidewall 833 of acoustic waveguide 832 forms an angle a with respect to central axis 835 of acoustic waveguide 832. In some embodiments, as shown, assuming the direction of central axis of acoustic waveguide 832 pointing to acoustic cavity 831 is positive direction, when the aperture of acoustic waveguide 832 contracts inward along the positive direction of central axis 835, that is, sidewall 833 and / or sidewall 834 of acoustic waveguide 832 move closer to central axis 835 along the positive direction of central axis 835 of acoustic waveguide 832, the angle of angle a can be any value between 0° and 90°. For example, the angle of angle a can be any value between 0° and 30°. For another example, the angle of angle a can be any value between 30° and 45°. For another example, the angle of angle a can be any value between 45° and 60°. For another example, the angle of angle a can be any value between 60° and 90°. Figure 8 As shown, assuming the direction of central axis of acoustic waveguide 832 pointing to acoustic cavity 831 is positive direction, when the aperture of acoustic waveguide 832 contracts inward along the positive direction of central axis 835, that is, sidewall 833 and / or sidewall 834 of acoustic waveguide 832 move closer to central axis 835 along the positive direction of central axis 835 of acoustic waveguide 832, the angle of angle a can be any value between 0° and 90°. For example, the angle of angle a can be any value between 0° and 30°. For another example, the angle of angle a can be any value between 30° and 45°. For another example, the angle of angle a can be any value between 45° and 60°. For another example, the angle of angle a can be any value between 60° and 90°.
[0107] As shown, assuming the direction of central axis of acoustic waveguide 832 pointing to acoustic cavity 831 is positive direction, when the aperture of acoustic waveguide 832 contracts inward along the positive direction of central axis 835, that is, sidewall 833 and / or sidewall 834 of acoustic waveguide 832 move closer to central axis 835 along the positive direction of central axis 835 of acoustic waveguide 832, the angle of angle a can be any value between 0° and 90°. For example, the angle of angle a can be any value between 0° and 30°. For another example, the angle of angle a can be any value between 30° and 45°. For another example, the angle of angle a can be any value between 45° and 60°. For another example, the angle of angle a can be any value between 60° and 90°. Figure 9 As shown, assuming the direction of central axis of acoustic waveguide 832 pointing to acoustic cavity 831 is positive direction, when the aperture of acoustic waveguide 832 contracts inward along the positive direction of central axis 835, that is, sidewall 833 and / or sidewall 834 of acoustic waveguide 832 move closer to central axis 835 along the positive direction of central axis 835 of acoustic waveguide 832, the angle of angle a can be any value between 0° and 90°. For example, the angle of angle a can be any value between 0° and 30°. For another example, the angle of angle a can be any value between 30° and 45°. For another example, the angle of angle a can be any value between 45° and 60°. For another example, the angle of angle a can be any value between 60° and 90°.
[0108] By setting an inclination angle between the side wall of the sound guide tube 832 and the central axis of the sound guide tube 832, the position of the resonance frequency of the microphone 800 can be adjusted without changing the length of the sound guide tube 832 and the outer diameter of the first end of the sound guide tube 832 (e.g., an end located on or away from the first side wall 811 of the housing 810 and outside the microphone 800). For example, when the aperture of the sound guide tube 832 is contracted inward along the positive direction of the central axis 835, the cross-sectional size of the second end of the sound guide tube 832 (e.g., an end extending into the acoustic cavity 831) can be reduced without changing the length of the sound guide tube 832 and the aperture of the first end of the sound guide tube 832, thereby lowering the resonance frequency of the acoustic structure 830. For another example, when the aperture of the sound guide tube 832 is expanded outward along the positive direction of the central axis 835, the cross-sectional size of the second end of the sound guide tube 832 can be increased without changing the length of the sound guide tube 832 and the aperture of the first end of the sound guide tube 832, thereby raising the resonance frequency of the acoustic structure 830.
[0109] In some embodiments, when the cross section of the acoustic cavity 831 (e.g., a cross section parallel to the XZ plane) is circular, the aperture of the first end of the sound guide tube 832 can be no more than 1.5 times the length of the sound guide tube 832. In some embodiments, the aperture of the first end of the sound guide tube 832 can be in the range of 0.1 millimeter to 3 millimeters, and the length of the sound guide tube 832 can be in the range of 1 millimeter to 4 millimeters. In some embodiments, the aperture of the first end of the sound guide tube 832 can be in the range of 0.1 millimeter to 2 millimeters, and the length of the sound guide tube 832 can be in the range of 1 millimeter to 3 millimeters.
[0110] Figure 10 is a schematic diagram of an example microphone according to some embodiments of the present specification. As shown in Figure 10 The microphone 1000 can include a housing 1010, at least one acoustic-electric transducer 1020, and an acoustic structure 1030. The acoustic structure 1030 can include a sound guide tube 1032 and an acoustic cavity 1031. Figure 10 One or more components of the microphone 1000 shown can be the same as or similar to one or more components of the microphone 200 shown in Figure 2A For example, the housing 1010, the acoustic-electric transducer 1020, the aperture 1021 of the acoustic-electric transducer 1020, the acoustic structure 1030, the acoustic cavity 1040, the application-specific integrated circuit 1050, etc. of the microphone 1000 can be the same as or similar to the housing 210, the acoustic-electric transducer 220, the aperture 221 of the acoustic-electric transducer 220, the acoustic structure 230, the acoustic cavity 240, etc. of the microphone 200 shown in Figure 3
[0111] In some embodiments, the difference between microphone 1000 and microphone 200 is that microphone 1000 may further include an acoustic damping structure 1060. According to formula (2), the acoustic damping structure 1060 can be used to adjust the bandwidth of the acoustic structure 1030. In some embodiments, the acoustic damping structure 1060 may include a diaphragm acoustic damping structure, a mesh acoustic damping structure, a plate acoustic damping structure, or a combination thereof. In some embodiments, the acoustic damping structure 1060 may include a single-layer damping structure, a multi-layer damping structure, or other damping structures. A multi-layer damping structure may include a single multi-layer damping structure or a damping structure composed of multiple single-layer damping structures.
[0112] In some embodiments, the acoustic impedance structure 1060 may be disposed on the outer surface of the first sidewall 1011 away from the housing 1010 of the sidewall 1033 of the sound guide tube 1032, inside the sound guide tube 1032, on the inner surface of the first sidewall 1011, on the outer surface of the first sidewall 1011, in the acoustic cavity 1031, on the inner surface of the second sidewall 1051 for forming the aperture 1021 of the acoustic-electric converter 1020, on the outer surface of the second sidewall 1051, inside the aperture 1021 of the acoustic-electric converter 1020, or a combination thereof.
[0113] like Figure 10 As shown, the acoustic damping structure 1060 can be disposed as a single-layer damping structure on the outer surface of the sidewall 1033 of the sound guide tube 1032, away from the first sidewall 1011. The material, size, thickness, etc., of the acoustic damping structure 1060 can be set according to actual needs. For example, the length of the acoustic damping structure 1060 along the X-axis can be equal to the sum of the lengths of the sound guide tube 1032 and its sidewall 1033. Another example is that the length of the acoustic damping structure 1060 along the X-axis can be equal to or greater than the aperture of the sound guide tube 1032. Yet another example is that the width of the acoustic damping structure 1060 along the Z-axis can be equal to or greater than the width of the sidewall 1033 of the sound guide tube 1032.
[0114] like Figure 11 As shown, the acoustic damping structure 1060 can be disposed on the inner surface of the first sidewall 1011 in the form of a single-layer damping structure. In some embodiments, the acoustic damping structure 1060 can be connected to one or more sidewalls of the housing 1010 (e.g., sidewalls 1011, 1012, 1013, etc. of the housing 1010). The material, size, thickness, etc. of the acoustic damping structure 1060 can be set according to actual needs. For example, the length of the acoustic damping structure 1060 along the X-axis direction can be less than or equal to the length of the sidewall 1011 of the housing 1010 along the X-axis direction. As another example, the width of the acoustic damping structure 1060 along the Z-axis direction can be less than or equal to the width of the sidewall 1011 of the housing 1010 along the Z-axis direction. As yet another example, the size of the acoustic damping structure 1060 can be greater than, equal to, or smaller than the aperture of the sound guide tube 1032.
[0115] like Figure 12 As shown, the acoustic damping structure 1060 can be disposed in the acoustic cavity 1031 in the form of a single-layer damping structure, and may or may not be in contact with the sidewall forming the sound guide 1032. For example, the two ends of the acoustic damping structure 1060 can be connected to the sidewall 1011 and / or sidewall 1013 of the housing 1010, respectively. Figure 13 As shown, the acoustic damping structure 1060 can be disposed as a single-layer damping structure on the outer surface of the second sidewall 1051 of the aperture 1021 used to form the acoustic-electric converter 1020, and can be physically connected to or not connected to the second sidewall 1051. For example, the two ends of the acoustic damping structure 1060 can be connected to the sidewalls 1012 and 1013 of the housing 1010, respectively. Alternatively, the acoustic damping structure 1060 can be physically connected to the second sidewall 1051. In some embodiments, the dimensions of the acoustic damping structure 1060 can be the same as or different from the dimensions of the second sidewall 1051. For example, the length of the acoustic damping structure 1060 along the X-axis can be greater than, equal to, or less than the length of the second sidewall 1051 along the X-axis and the aperture of the aperture 1021. In some embodiments, the dimensions of the acoustic damping structure 1060 can be larger than the dimensions of the aperture 1021 of the acoustic-electric converter 1020.
[0116] like Figure 14 As shown, the acoustic damping structure 1060 can be disposed inside the sound guide tube 1032 in the form of a single-layer damping structure, and it can be wholly or partially connected to the sidewall 1033 of the sound guide hole. In some embodiments, the material, size, thickness, etc. of the acoustic damping structure 1060 can be set according to actual needs. For example, the thickness of the acoustic damping structure 1060 along the Y-axis direction can be greater than, equal to, or less than the length of the sound guide tube 1032 along the Y-axis direction. As another example, the length of the acoustic damping structure 1060 along the X-axis direction can be greater than, equal to, or less than the aperture of the sound guide tube 1032.
[0117] Figure 15 These are schematic diagrams of the microphone structure shown in some embodiments of this specification, such as... Figure 15As shown, the acoustic resistance structure 1060 can include a double-layer damping structure, which can include a first acoustic resistance structure 1061 and a second acoustic resistance structure 1062. The first acoustic resistance structure 1061 can be disposed on an outer surface of the sidewall 1033 forming the acoustic guide tube 1032 away from the first sidewall 1011 of the housing 1010, which can be physically connected or not connected to the outer surface of the first sidewall 1011. The second acoustic resistance structure 1062 can be disposed on an inner surface of the first sidewall 1011, which can be physically connected or not connected to the inner surface of the first sidewall 1011. In some embodiments, the positions, sizes, materials, etc. of the first acoustic resistance structure 1061 and the second acoustic resistance structure 1062 can be set as needed, which can be the same or different. For example, the first acoustic resistance structure 1061 and / or the second acoustic resistance structure 1062 can be disposed in the acoustic cavity 1031 (e.g., physically connected to the second sidewall 1051, the first sidewall 1011, the sidewall 1012, the sidewall 1013, etc.). For another example, the first acoustic resistance structure 1061 and / or the second acoustic resistance structure 1062 can be disposed in the hole portion 1021 of the acoustic-electric converter 1020. For yet another example, the first acoustic resistance structure 1061 and / or the second acoustic resistance structure 1062 can be disposed in the acoustic guide tube 1032. For still another example, the first acoustic resistance structure 1061 and / or the second acoustic resistance structure 1062 can be disposed on the outer surface of the sidewall 1033 of the acoustic guide tube 1032.
[0118] In some embodiments, the acoustic resistance value of the acoustic resistance structure 1060 can be changed by adjusting the parameters of the acoustic resistance structure 1060. In some embodiments, the parameters of the acoustic resistance structure 1060 can include, but are not limited to, the thickness, the pore size, the open area ratio, etc. of the acoustic resistance structure 1060. In some embodiments, the thickness of the acoustic resistance structure 1060 can be 20 microns - 300 microns. In some embodiments, the thickness of the acoustic resistance structure 1060 can be 10 microns - 400 microns. In some embodiments, the pore size of the acoustic resistance structure 1060 can be 20 microns - 300 microns. In some embodiments, the pore size of the acoustic resistance structure 1060 can be 30 microns - 300 microns. In some embodiments, the pore size of the acoustic resistance structure 1060 can be 10 microns - 400 microns. In some embodiments, the open area ratio of the acoustic resistance structure 1060 can be 10% - 50%. In some embodiments, the open area ratio of the acoustic resistance structure 1060 can be 30% - 50%. In some embodiments, the open area ratio of the acoustic resistance structure 1060 can be 20% - 40%. In some embodiments, the open area ratio of the acoustic resistance structure 1060 can be 25% - 45%. In some embodiments, the acoustic resistance value of the acoustic resistance structure 1060 ranges from 1 MKS Rayls to 100 MKS Rayls. In some embodiments, by adjusting the parameters (e.g., the pore size, the thickness, the open area ratio, etc.) of the acoustic resistance structure 1060, the acoustic resistance value of the acoustic resistance structure 1060 can be made to be 10 MKS Rayls - 90 MKS Rayls, 20 MKS Rayls - 80 MKS Rayls, 30 MKS Rayls - 70 MKS Rayls, 40 MKS Rayls - 60 MKS Rayls, 50 MKS Rayls.
[0119] In some embodiments, by providing an acoustic resistance structure in a microphone, the acoustic resistance of the acoustic structure of the microphone can be increased, and thus the bandwidth (3dB) and / or the Q value of the frequency response of the microphone can be adjusted. In some embodiments, the acoustic resistance structures with different acoustic resistance values can have different degrees of influence on the Q value of the frequency response of the microphone. Figure 16 is a frequency response curve of an exemplary microphone according to some embodiments of the present specification. As shown in FIG. 10, the frequency response curve of the exemplary microphone includes a first frequency response curve 1001 and a second frequency response curve 1002. The first frequency response curve 1001 is a frequency response curve of a microphone without an acoustic resistance structure, and the second frequency response curve 1002 is a frequency response curve of a microphone with an acoustic resistance structure. Figure 16As shown, the horizontal axis represents frequency in Hz, and the vertical axis represents the microphone's frequency response in dB. Curve 1610 represents the frequency response of a microphone without an acoustic impedance structure; curve 1615 represents the frequency response of a microphone with an acoustic impedance of 3 MKS Rayls; curve 1620 represents the frequency response of a microphone with an acoustic impedance of 20 MKS Rayls; curve 1630 represents the frequency response of a microphone with an acoustic impedance of 65 MKS Rayls; curve 1640 represents the frequency response of a microphone with an acoustic impedance of 160 MKS Rayls; and curve 1650 represents the frequency response of a microphone with an acoustic impedance of 4000 MKS Rayls. Figure 16 It is known that as the acoustic impedance value of the acoustic resistor structure increases, the bandwidth of the microphone's frequency response curve increases, while the microphone's frequency response decreases. Therefore, the Q value of the microphone can be adjusted by setting the acoustic impedance value of the acoustic resistor structure. In some embodiments, as the acoustic impedance value of the acoustic resistor structure increases, the Q value of the microphone decreases. Therefore, the acoustic impedance value of the acoustic resistor structure can be selected according to actual needs to obtain the target Q value and target bandwidth of the microphone. For example, the acoustic impedance value of the acoustic resistor structure can be set to no more than 20 MKS Rayls, corresponding to a target bandwidth (3dB) of no less than 300Hz. As another example, the acoustic impedance value of the acoustic resistor structure can be no more than 100 MKS Rayls, corresponding to a target bandwidth (3dB) of no less than 1000Hz.
[0120] Figure 17 This is a schematic diagram of an exemplary microphone according to some embodiments of this specification. For example... Figure 17 As shown, microphone 1700 may include a housing 1710, at least one acoustic-to-electric transducer 1720, an acoustic structure 1730 (also referred to as a first acoustic structure), an acoustic cavity 1740, and an acoustic structure 1770 (also referred to as a second acoustic structure). Acoustic structure 1730 may include a sound guide tube 1732 (also referred to as a first sound guide tube) and an acoustic cavity 1731 (also referred to as a first acoustic cavity). Acoustic structure 1770 may include a second acoustic cavity 1771 and a second sound guide tube 1772. One or more components in microphone 1700 may be compatible with... Figure 3 One or more corresponding components in the microphone 300 shown are identical or similar. For example, housing 1710, at least one acoustic-to-electrical transducer 1720, acoustic structure 1730, acoustic cavity 1740, application-specific integrated circuit 1750, etc., are similar to... Figure 3The housing 210, the at least one acoustic-electric converter 220, the acoustic structure 230, the acoustic cavity 240, the application-specific integrated circuit 250, etc. in the microphone 200 are the same or similar as shown. The microphone 1700 differs from the microphone 200 in that the microphone 1700 can further include a second acoustic structure 1770. In some embodiments, the second acoustic structure 1770 can be disposed in series with the acoustic structure 1730. The second acoustic structure 1770 and the acoustic structure 1730 being disposed in series means that a second acoustic cavity 1771 of the second acoustic structure 1770 can be in acoustic communication with an acoustic cavity 1731 of the acoustic structure 1730 through a sound guide tube 1732 of the acoustic structure 1730. In some embodiments, the second acoustic cavity 1771 of the second acoustic structure 1770 can be in acoustic communication with an outside of the microphone 1700 through a second sound guide tube 1772. In some embodiments, the acoustic-electric converter 1720 can include a hole 1721 through which the acoustic cavity 1731 can be in acoustic communication with the acoustic-electric converter 720. In some embodiments, the sound guide tube 1732 can be disposed on a cavity wall 1711 that constitutes the acoustic cavity 1731, and the second sound guide tube 1772 can be disposed on a cavity wall 1712 that constitutes the second acoustic cavity 1771.
[0121] In some embodiments, an external sound signal picked up by the microphone 1700 can be first conditioned (e.g., filtered) by the second acoustic structure 1770, then transmitted to the acoustic structure 1730 through the sound guide tube 1732, and the acoustic structure 1730 can condition the sound signal again. The sound signal after the second conditioning can further enter the acoustic cavity 1740 of the microphone 1700 through the hole 1721, thereby generating an electrical signal.
[0122] The structural parameters of the acoustic structure 1730 can include a shape of the sound guide tube 1732, a size of the sound guide tube 1732, a size of the acoustic cavity 1731, an acoustic resistance of the sound guide tube 1732 or the acoustic cavity 1731, a roughness of an inner surface of a sidewall that forms the sound guide tube 1732, etc. or a combination thereof. The structural parameters of the second acoustic structure 1770 can include a shape of the second sound guide tube 1772, a size of the second sound guide tube 1772, a size of the second acoustic cavity 1771, an acoustic resistance of the second sound guide tube 1772 or the second acoustic cavity 1771, a roughness of an inner surface of a sidewall that forms the second sound guide tube 1772, etc. or a combination thereof. In some embodiments, the structural parameters of the second acoustic structure 1770 are the same as or different from the structural parameters of the acoustic structure 1730. For example, the acoustic structure 1770 can be a cylinder, and the acoustic structure 1730 can be a cylinder. For another example, the acoustic structure 1770 can have a smaller acoustic resistance than the acoustic structure 1730. The settings of the structural parameters of the acoustic structure 1730 and / or the acoustic structure 1770 can be found in Figure 2A 、 Figure 3 andFigures 5-15 and related descriptions.
[0123] In some embodiments, the acoustic-electric transducer 1720 can have a second resonant frequency, and frequency components of the sound signal at the second resonant frequency can resonate such that the acoustic-electric transducer 1720 can amplify frequency components of the sound signal around the second resonant frequency. The second acoustic structure 1770 can have a resonant frequency (which can also be referred to as a third resonant frequency). Frequency components of the sound signal at the third resonant frequency can resonate such that the second acoustic structure 1770 can amplify frequency components of the sound signal around the third resonant frequency. The acoustic structure 1730 can have a first resonant frequency, and frequency components of the sound signal amplified by the second acoustic structure 1770 at the first resonant frequency can resonate such that the acoustic structure 1730 can continue to amplify frequency components of the sound signal around the first resonant frequency. Given that a particular acoustic structure can have better amplification effect on sound components of a particular frequency range, for ease of understanding, the sound signal amplified by an acoustic structure can be regarded as a sub-band sound signal at the resonant frequency corresponding to the acoustic structure. For example, the sound amplified by the second acoustic structure 1770 described above can be regarded as a sub-band sound signal at the third resonant frequency, and the sound signal continued to be amplified by the acoustic structure 1730 can generate another sub-band sound signal at the first resonant frequency. The amplified sound signal is transmitted to the acoustic-electric transducer 1720, thereby generating a corresponding electrical signal. In this way, the acoustic structure 1730 and the second acoustic structure 1770 can respectively increase the Q value of the microphone 1700 in the frequency band including the first resonant frequency and the third resonant frequency, thereby increasing the sensitivity of the microphone 1700, so that the sensitivity of the microphone 1700 in response at the first resonant frequency is greater than the sensitivity of the acoustic-electric transducer 1720 in response at the first resonant frequency and / or the sensitivity of the microphone 1700 in response at the third resonant frequency is greater than the sensitivity of the acoustic-electric transducer 1720 in response at the third resonant frequency. In some embodiments, the increase in sensitivity of the microphone 1700 (relative to the acoustic-electric transducer) at different resonant frequencies can be the same or different. For example, when the third resonant frequency is greater than the first resonant frequency, the sensitivity of the microphone 1700 in response at the third resonant frequency is greater than the sensitivity of the microphone 1700 in response at the first resonant frequency. In some embodiments, the frequency response curve (e.g., resonant frequency, frequency response bandwidth (3dB), Q value, etc.) of the acoustic structure 1770 and / or the acoustic structure 1730 can be adjusted by adjusting the structural parameters of the second acoustic structure 1770 and / or the acoustic structure 1730. For example, an acoustic resistance structure can be provided in the second acoustic structure 1770 (e.g., the second sound guide tube 1772, the second acoustic cavity 1771, etc.) or the acoustic structure 1730 (e.g., the sound guide tube 1732, the acoustic cavity 1711, etc.) to adjust the frequency response bandwidth (3dB) of the second acoustic structure 1770 or the acoustic structure 1730.For example, the resonant frequency or the sound signal amplification of the acoustic structure 1730 can be adjusted by adjusting the aperture of the sound guide tube 1732, the length of the sound guide tube 1732, the volume of the acoustic cavity 1731, etc. Similarly, the resonant frequency or the sound signal amplification of the acoustic structure 1730 can also be adjusted by adjusting the aperture of the second sound guide tube 1772, the length of the second sound guide tube 1772, the volume of the second acoustic cavity 1771, etc. For example, the aperture of the sound guide tube 1732 and / or the second sound guide tube 1772 can be no more than 2 times the length thereof. For another example, the roughness of the inner surface of the sidewall of the sound guide tube 1732 and / or the second sound guide tube 1772 can be no more than 0.8. For yet another example, the inner diameter of the acoustic cavity 1731 and / or the second acoustic cavity 1771 can be no less than the thickness thereof. Details about adjusting the frequency response curve of the acoustic structure by adjusting the structural parameters of the acoustic structure can be referred to in the description of the acoustic structure 1730 and the second acoustic structure 1770. Figure 2A , Figure 3 and Figures 5-15 and the related description.
[0124] In some embodiments, the first resonant frequency corresponding to the acoustic structure 1730 and the third resonant frequency corresponding to the second acoustic structure 1770 can be set according to actual conditions. For example, the first resonant frequency and the third resonant frequency can be less than the second resonant frequency, so as to improve the sensitivity of the microphone 1700 in the low and medium frequency band. For another example, the absolute value of the difference between the first resonant frequency and the third resonant frequency can be less than a frequency threshold (e.g., 100 Hz, 200 Hz, 1000 Hz, etc.), so as to improve the sensitivity and Q value of the microphone 1700 in a certain frequency range. For yet another example, the first resonant frequency can be greater than the second resonant frequency (e.g., the difference between the first resonant frequency and the second resonant frequency is greater than 100 Hz), and the third resonant frequency can be less than the second resonant frequency (e.g., the absolute value of the difference between the third resonant frequency and the second resonant frequency can be no less than 100 Hz), so as to make the frequency response curve of the microphone 1700 more flat, and improve the sensitivity of the microphone 1700 in a wider frequency band.
[0125] The description of the above microphone 1700 is for the purpose of illustration only and is not intended to limit the scope of the present specification. Various changes and modifications can be made to the description of the present specification by those of ordinary skill in the art. In some embodiments, the microphone 1700 can include a plurality of acoustic structures (e.g., 3, 5, 11, 14, 64, etc.). In some embodiments, the connection manner of the acoustic structures in the microphone can be in series, in parallel, or a combination thereof. In some embodiments, the size of the first resonant frequency, the second resonant frequency, and the third resonant frequency can be adjusted according to actual needs. For example, the first resonant frequency and / or the third resonant frequency can be less than, equal to, or greater than the second resonant frequency. For another example, the first resonant frequency can be less than, equal to, or greater than the third resonant frequency. These changes and modifications are still within the protection scope of the present specification.
[0126] Figure 18 is a schematic diagram of an exemplary microphone according to some embodiments of the present specification. As shown in Figure 18 the microphone 1800 can include a housing 1810, at least one acoustoelectric transducer 1820, an acoustic structure 1830, a second acoustic structure 1870, and a third acoustic structure 1880. One or more components in the microphone 1800 can be the same as or similar to one or more components in the microphone 1700 shown in Figure 17 For example, the housing 1810, the at least one acoustoelectric transducer 1820, the acoustic structure 1830, the acoustic cavity 1840, the application-specific integrated circuit 1850, etc. are the same as or similar to the housing 1710, the at least one acoustoelectric transducer 1720, the acoustic structure 1730, the acoustic cavity 1740, the application-specific integrated circuit 1750, etc. in the microphone 1700 shown in Figure 17 The microphone 1800 differs from the microphone 1700 in that the number and connection manner of the acoustic structures included in the microphone 1800 can be different from the microphone 1700.
[0127] In some embodiments, the housing 1810 can be used to house one or more components in the microphone 1800 (e.g., the acoustic-to-electric converter 1820, at least a portion of the acoustic structure 1830, the second acoustic structure 1870, and / or the third acoustic structure 1880). In some embodiments, the housing 1810 can be a hollow structure inside, can form one or more acoustic cavities, e.g., the acoustic cavity 1840, the acoustic structure 1830, the second acoustic structure 1870, the third acoustic structure 1880, etc. In some embodiments, the acoustic-to-electric converter 1820 can be disposed in the acoustic cavity 1840. In some embodiments, the acoustic-to-electric converter 1820 can include a hole 1821. The third acoustic structure 1880 can be in acoustic communication with the acoustic-to-electric converter 1820 through the hole 1821. In some embodiments, the acoustic structure 1830 can include a sound guide 1831 and an acoustic cavity 1832, the second acoustic structure 1870 can include a second sound guide 1871 and a second acoustic cavity 1872, and the third acoustic structure 1880 can include a third sound guide 1881, a fourth sound guide 1882, and a third acoustic cavity 1883. The acoustic cavity 1832 can be in acoustic communication with the third acoustic cavity 1883 through the third sound guide 1881. The acoustic cavity 1832 can be in acoustic communication with the outside of the acoustic microphone 1800 through the sound guide 1831. The second acoustic cavity 1872 can be in acoustic communication with the third acoustic cavity 1883 through the fourth sound guide 1882. The second acoustic cavity 1872 can be in acoustic communication with the outside of the acoustic microphone 1800 through the second sound guide 1871. The third acoustic cavity 1883 can be in acoustic communication with the acoustic-to-electric converter 1820 through the hole 1821 of the acoustic-to-electric converter 1820.
[0128] In some embodiments, the acoustic structure 1830 has a first resonant frequency, the acoustic-electric transducer 1820 has a second resonant frequency, the second acoustic structure 1870 has a third resonant frequency, and the third acoustic structure 1880 has a fourth resonant frequency. In some embodiments, the first resonant frequency, the third resonant frequency, and / or the fourth resonant frequency can be the same as or different from the second resonant frequency. In some embodiments, the first resonant frequency, the third resonant frequency, and / or the fourth resonant frequency can be the same or different. For example, the first resonant frequency can be greater than 10,000 Hz, the second resonant frequency can be in the range of 500-700 Hz, the third resonant frequency can be in the range of 700 Hz-1,000 Hz, and the fourth resonant frequency can be in the range of 1,000 Hz-1,300 Hz, so as to improve the sensitivity of the microphone 1800 in a wider frequency band range. For another example, the first resonant frequency, the third resonant frequency, and the fourth resonant frequency can be less than the second resonant frequency, so as to improve the frequency response and sensitivity of the microphone 1800 in the low-mid frequency range. For yet another example, part of the first resonant frequency, the third resonant frequency, and the fourth resonant frequency can be less than the second resonant frequency, and another part of the first resonant frequency, the third resonant frequency, and the fourth resonant frequency can be greater than the second resonant frequency, so as to improve the sensitivity of the microphone 1800 in a wider frequency band range. For still another example, the first resonant frequency, the third resonant frequency, and the fourth resonant frequency can be located in a specific frequency range, so as to improve the sensitivity and Q value of the microphone 1800 in the specific range.
[0129] When the microphone 1800 is used for sound signal processing, a sound signal can enter the acoustic cavity 1832 of the acoustic structure 1830 through the sound guide tube 1831 and / or enter the second acoustic cavity 1872 of the second acoustic structure 1870 through the second sound guide tube 1871. The acoustic structure 1830 can adjust the sound signal to generate a first sub-band sound signal having a first resonance peak at the first resonant frequency. Similarly, the second acoustic structure 1870 can process the sound signal to generate a second sub-band sound signal having a second resonance peak at the third resonant frequency. The first sub-band sound signal and / or the second sub-band sound signal generated after being adjusted by the acoustic structure 1830 and / or the second acoustic structure 1870 can enter the third acoustic cavity 1883 through the third sound guide tube 1881 and the fourth sound guide tube 1882, respectively. The third acoustic structure 1880 can continue to adjust the first sub-band sound signal and the second sub-band sound signal to generate a third sub-band sound signal having a third resonance peak at the fourth resonant frequency. The first sub-band sound signal, the second sub-band sound signal, and the third sub-band sound signal generated by the acoustic structure 1830, the second acoustic structure 1870, and the third acoustic structure 1880 can be transmitted to the acoustic-electric transducer 1820 through the hole part 1821 of the acoustic-electric transducer 1820. The acoustic-electric transducer 1820 can generate an electric signal according to the first sub-band sound signal, the second sub-band sound signal, and the third sub-band sound signal.
[0130] It should be noted that the acoustic structures included in the microphone 1800 are not limited to the acoustic structures 1830, the second acoustic structures 1870 and the third acoustic structures 1880 shown in FIG. 18. The number of acoustic structures included in the microphone 1800, the structural parameters of the acoustic structures, the number of acoustic structures, the connection manner of the acoustic structures, etc. can be set according to actual needs (e.g., target resonant frequency, target sensitivity, number of sub-band electrical signals, etc.). For example only, Figure 18 Figure 19 is a schematic diagram of an exemplary microphone according to some embodiments of the present specification. As shown in FIG. 19, the microphone 1900 can include a housing 1910, an acoustic-electric transducer 1920, an acoustic cavity 1940, an acoustic structure 1901, an acoustic structure 1902, an acoustic structure 1903, an acoustic structure 1904, an acoustic structure 1904, an acoustic structure 1905, an acoustic structure 1906, and an acoustic structure 1907. The acoustic-electric transducer 1920 can be disposed in the acoustic cavity 1940. The acoustic-electric transducer 1920 can include a hole portion 1921. The acoustic structure 1907 can include an acoustic cavity 1973 and six sound guide tubes respectively in communication with the acoustic structure 1901, the acoustic structure 1902, the acoustic structure 1903, the acoustic structure 1904, the acoustic structure 1905, and the acoustic structure 1906. The components of the microphone 1900 and the processing process of the sound signal are similar to those of the microphone 1800 in Figure 19 FIG. 17, and will not be described here again. For details of adjusting the frequency response curve (e.g., resonant frequency, frequency bandwidth, sound pressure amplification factor, etc.) of the acoustic structure 1830, the second acoustic structure 1870 and / or the third acoustic structure 1880 in Figure 18 Figure 18 Figure 2A Figure 3 and related descriptions thereof. Figures 5-15
[0131] Figure 20 is a schematic diagram of an exemplary microphone according to some embodiments of the present specification. As shown in FIG. 19, the microphone 1900 can include a housing 1910, an acoustic-electric transducer 1920, an acoustic cavity 1940, an acoustic structure 1901, an acoustic structure 1902, an acoustic structure 1903, an acoustic structure 1904, an acoustic structure 1904, an acoustic structure 1905, an acoustic structure 1906, and an acoustic structure 1907. The acoustic-electric transducer 1920 can be disposed in the acoustic cavity 1940. The acoustic-electric transducer 1920 can include a hole portion 1921. The acoustic structure 1907 can include an acoustic cavity 1973 and six sound guide tubes respectively in communication with the acoustic structure 1901, the acoustic structure 1902, the acoustic structure 1903, the acoustic structure 1904, the acoustic structure 1905, and the acoustic structure 1906. The components of the microphone 1900 and the processing process of the sound signal are similar to those of the microphone 1800 in Figure 20 As shown, the microphone 2000 can include a housing 2010, an acoustic cavity 2040, an acoustic-electric converter 2020, and an acoustic structure 2030. In some embodiments, the acoustic-electric converter 2020 can be disposed in the acoustic cavity 2040. In some embodiments, the acoustic-electric converter 2020 can include a plurality of acoustic-electric converters, for example, an acoustic-electric converter 2021, a second acoustic-electric converter 2022, a third acoustic-electric converter 2023, a fourth acoustic-electric converter 2024, a fifth acoustic-electric converter 2025, and a sixth acoustic-electric converter 2026. In some embodiments, the acoustic structure 2030 can include a plurality of acoustic structures, for example, an acoustic structure 2031, a second acoustic structure 2032, a third acoustic structure 2033, a fourth acoustic structure 2034, a fifth acoustic structure 2035, and a sixth acoustic structure 2036. In some embodiments, each acoustic structure in the microphone 2000 is disposed corresponding to one acoustic-electric converter, for example, the acoustic structure 2031 is in acoustic communication with the acoustic-electric converter 2021 through a hole of the acoustic-electric converter 2021, the second acoustic structure 2032 is in acoustic communication with the second acoustic-electric converter 2022 through a hole of the second acoustic-electric converter 2022, the third acoustic structure 2033 is in acoustic communication with the third acoustic-electric converter 2023 through a hole of the third acoustic-electric converter 2023, the fourth acoustic structure 2034 is in acoustic communication with the fourth acoustic-electric converter 2024 through a hole of the fourth acoustic-electric converter 2024, the fifth acoustic structure 2035 is in acoustic communication with the fifth acoustic-electric converter 2025 through a hole of the fifth acoustic-electric converter 2025, and the sixth acoustic structure 2036 is in acoustic communication with the sixth acoustic-electric converter 2026 through a hole 2063 of the sixth acoustic-electric converter 2026. Taking the sixth acoustic structure 2036 as an example, the sixth acoustic structure 2036 includes a sound guide tube 2061 and an acoustic cavity 2062. The sixth acoustic structure 2036 is in acoustic communication with the outside of the microphone 2000 through the sound guide tube 2061 for receiving sound signals. The acoustic cavity 2062 of the sixth acoustic structure 2036 is in acoustic communication with the acoustic-electric converter 2026 through the hole 2063 of the acoustic-electric converter 2026. In some embodiments, all acoustic structures in the microphone can correspond to one acoustic-electric converter. For example, the sound guide tubes of the acoustic structure 2031, the second acoustic structure 2032, the third acoustic structure 2033, the fourth acoustic structure 2034, the fifth acoustic structure 2035, and the sixth acoustic structure 2036 can be in acoustic communication with the outside of the microphone 2000, and their acoustic cavities can be in acoustic communication with the acoustic-electric converter. For another example, the microphone 2000 can include a plurality of acoustic-electric converters, and some of the acoustic structure 2031, the second acoustic structure 2032, the third acoustic structure 2033, the fourth acoustic structure 2034, the fifth acoustic structure 2035, and the sixth acoustic structure 2036 can be in acoustic communication with one of the acoustic-electric converters, and the other acoustic structures can be in acoustic communication with another acoustic-electric converter.For another example, the microphone 2000 can include a plurality of acoustic-to-electric converters, the acoustic cavity of the acoustic structure 2031 can be in acoustic communication with the acoustic cavity of a second acoustic structure via a sound guide of the second acoustic structure 2032, the acoustic cavity of the second acoustic structure 2032 can be in acoustic communication with the acoustic cavity of a third acoustic structure 2033 via a sound guide of the third acoustic structure 2033. The fourth acoustic structure 2034 can be in acoustic communication with the acoustic cavity of a fifth acoustic structure 2035 via a sound guide of the fifth acoustic structure 2035, the acoustic cavity of the fifth acoustic structure 2035 can be in acoustic communication with the acoustic cavity 2062 of a sixth acoustic structure 2036 via a sound guide 2061 of the sixth acoustic structure 2036. The acoustic cavity of the third acoustic structure 2033 and the acoustic cavity 2062 of the sixth acoustic structure 2036 can be in acoustic communication with the same or different acoustic-to-electric converters. Variations of this kind are within the scope of protection of the present specification.
[0132] In some embodiments, each of the acoustic structures 2030 can adjust the received sound signal to generate a sub-band sound signal. The generated sub-band sound signal can be transmitted to the acoustic-to-electric converter in acoustic communication with each of the acoustic structures, and the acoustic-to-electric converter converts the received sub-band sound signal into a sub-band electrical signal. In some embodiments, the acoustic structures in the acoustic structures 2030 can have different resonance frequencies, in which case, the acoustic structures in the acoustic structures 2030 can generate sub-band sound signals with different resonance frequencies, and the acoustic-to-electric converters corresponding to the acoustic structures in the acoustic-to-electric converters 2020 can generate sub-band electrical signals with different resonance frequencies after conversion. In some embodiments, the adjustment of the resonance frequency of one or more acoustic structures in the microphone 2000 can refer to the adjustment of the resonance frequency of the acoustic structure 2030 and / or the acoustic-to-electric converter 2020 described in the above Figure 2A Figure 3 Figures 5-15 and the related descriptions. In some embodiments, the number of acoustic structures 2030 and / or acoustic-to-electric converters 2020 can be set according to actual conditions. For example, the number of acoustic structures 2030 and / or acoustic-to-electric converters 2020 can be set according to the number of sub-band sound signals and / or sub-band electrical signals to be generated. For example only, when the sub-band electrical signals to be generated are 6, such as Figure 20 As shown, six acoustic structures can be provided, and the microphone 2000 can output six sub-band electric signals, and the resonance frequency ranges of the six sub-band electric signals can be 500Hz-700Hz, 1000Hz-1300Hz, 1700Hz-2200Hz, 3000Hz-3800Hz, 4700Hz-5700Hz, and 7000Hz-12000Hz, respectively. For another example, the resonance frequency ranges of the six sub-band electric signals output by the microphone 2000 can be 500Hz-640Hz, 640Hz-780Hz, 780Hz-930Hz, 940Hz-1100Hz, 1100Hz-1300Hz, and 1300Hz-1500Hz, respectively. For yet another example, the resonance frequency ranges of the six sub-band electric signals output by the microphone 2000 can be 20Hz-120Hz, 120Hz-210Hz, 210Hz-320Hz, 320Hz-410Hz, 410Hz-500Hz, and 500Hz-640Hz, respectively.
[0133] In some embodiments, by providing one or more acoustic structures in a microphone, for example, the acoustic structure 1730 and the acoustic structure 1770 in the microphone 1700, the acoustic structure 1830, the acoustic structure 1870, and the acoustic structure 1880 in the microphone 1800, the acoustic structure 1901, the acoustic structure 1902, the acoustic structure 1903, the acoustic structure 1904, the acoustic structure 1905, and the acoustic structure 1906 in the microphone 1900, the resonance frequency of the microphone can be increased, and thus the sensitivity of the microphone in a wider frequency band range can be improved. In addition, by providing multiple acoustic structures and / or connection modes of the acousto-electric transducers, for example, Figure 20 As shown, each acoustic structure in the microphone 2000 is provided corresponding to one acousto-electric transducer, which can improve the sensitivity of the microphone 2000 in a wider frequency band range, and can also divide the sound signal to generate sub-band electric signals, thereby reducing the burden of subsequent hardware processing.
[0134] Figure 21 FIG. 6 is a schematic diagram of a frequency response curve of an exemplary microphone according to some embodiments of the present specification. As shown, Figure 21 The horizontal axis represents frequency in Hz, and the vertical axis represents the frequency response of the microphone in dBV. For example, the microphone includes 11 acoustic structures, Figure 21 The 11 dashed lines in FIG. 6 represent the frequency response curves of the 11 acoustic structures. In some embodiments, the frequency response curves of the 11 acoustic structures can cover the frequency band range of 20Hz-20kHz that can be heard by human ears. Figure 21The solid line in FIG. 21 represents the frequency response curve 2110 of the microphone. For ease of understanding, the frequency response curve 2110 of the microphone can be regarded as the fusion of the frequency response curves of the 11 acoustic structures. In some embodiments, the target frequency response curve of the microphone can be adjusted by adjusting the frequency response curves of one or more acoustic structures. For example, since the fundamental frequency of human voice is mainly concentrated in the range of about 100 Hz-300 Hz, and most of the voice information is also concentrated in the low- and mid-frequency band range, the number of high-frequency sub-band acoustic signals (i.e., the number of acoustic structures with resonance frequencies in the high-frequency range) can be reduced while ensuring that the call effect is not reduced after processing the molecular band acoustic signals. For another example, at the intersection of the frequency response curves of two or more acoustic structures (e.g., the frequency response curves of two adjacent acoustic structures), the generated frequency response curve of the microphone after fusion can have a notch. Here, the notch can be understood as the difference in frequency response between adjacent peaks and valleys in the frequency response curve after fusion (e.g., Figure 21 The notch can cause the frequency response of the microphone to fluctuate greatly, thereby affecting the sensitivity and / or Q value of the microphone. In some embodiments, the resonance frequency of an acoustic structure can be reduced by adjusting the structural parameters of the acoustic structure, such as reducing the cross-sectional area of the sound guide tube, increasing the length of the sound guide tube, and increasing the volume of the acoustic cavity, etc. In some embodiments, the frequency band width of the frequency response curve of an acoustic structure can be increased by adjusting the structural parameters of the acoustic structure, such as providing a sound resistance structure in the microphone, etc., to reduce the large notch in the frequency response curve 2110 of the microphone after fusion in the high-frequency range, thereby improving the performance of the microphone. For example, Figure 22 is the frequency response curve of an exemplary microphone according to some embodiments of the present specification. As shown in Figure 22 , the horizontal axis represents the frequency in Hz, and the vertical axis represents the frequency response of the microphone in dBV. Among them, each dashed line can represent the frequency response curve of 11 acoustic structures of the microphone. Compared with the 11 dashed lines in Figure 21 , the 11 acoustic structures corresponding to the 11 dashed lines in Figure 22 may have relatively high sound resistance, for example, the inner surface of the side wall of the sound guide tube of the 11 acoustic structures corresponding to the 11 dashed lines in Figure 22 may be relatively rough, sound resistance structures are provided in the sound guide tube or the acoustic cavity, the sound guide tube has a relatively small size, etc. Compared with the frequency response curve 2110 of the acoustic structures in Figure 21 , the frequency response curve 2210 of the acoustic structures shown in Figure 22 has a relatively wide frequency band width, especially the response curve of the relatively high frequency. The notch of the frequency response curve of the microphone after fusion of the frequency response curves of the 11 acoustic structures (e.g.,Figure 22 The relative smallness of the delta dBV (shown in the graph 2200) results in a more flat frequency response curve 2210 after fusion.
[0135] The foregoing description of an implementation will be apparent to those skilled in the art from consideration of the specification and practice of the application disclosed herein. While the application has been described and illustrated with reference to specific implementations thereof, it will be apparent that various modifications and changes can be made to the implementation, by those skilled in the art, without departing from the spirit and scope of the application. It is, therefore, intended that the specification be considered as an exemplification of the application, and not as a limitation of the scope of the application. It is intended that there be no restriction on the scope of the present application other than as to the changes and modifications that can be made to the implementation described and illustrated herein, except as otherwise provided in the appended claims.
[0136] Also, the use of "an" or "one" to describe elements, items or features can be understood as meaning one or more than one unless indicated by the context or meaning. Also, the use of a singular title of a process, measurement, control or parameter should not be construed as excluding plural references unless indicated by the context or meaning. Further, the use of "based on" should not be construed as limiting the scope of the present application to a single value unless indicated by the context or meaning.
[0137] Further, those skilled in the art will appreciate that aspects of the present application are susceptible to many different alternative applications and embodiments as broadly described herein. Accordingly, the applications and embodiments of the present application should not be construed as limited to the specific applications and embodiments described herein, but rather, described herein in terms of the conception and general principles embodied therein.
[0138] In addition, the order of presentation of the aspects of the present application should not be construed as limiting unless clearly required by the context or meaning. Further, unless specifically stated otherwise, the use of a singular term, such as "an" or "one", should not be construed as limiting the scope of the present application to a single value unless clearly required by the context or meaning. Further, the use of "based on" should not be construed as limiting the scope of the present application to a single value unless clearly required by the context or meaning.
[0139] Similarly, it is to be noticed that the term "comprising", used in the description, should not be interpreted as being restricted to the means listed thereafter; it does not exclude other elements or steps. It is thus to be interpreted as specifying the presence of the stated features, integers, steps or components as referred to, but does not preclude the presence or addition of one or more other features, integers, steps or components, or groups thereof. Moreover, it is understood that the word "comprising" is one of the words available to define the features, number, position, order, etc. of elements in a claim; other words, such as "containing", "including", "having", "including", "carrying" "or "with" are also available for use, the only relevant point being whether the mentioned feature is or is not present in the claimed application.
[0140] Some embodiments use numerical values to describe components, quantities of attributes. It should be understood that such numerical values used in the description of embodiments are, in some examples, modified by the modifier "about," "approximately," or "generally." Unless otherwise stated, "about," "approximately," or "generally" indicates that a value can vary by ±20%. Accordingly, numerical values used in the specification and claims of some embodiments are approximations. These approximations are made in some embodiments to allow for significant figures to vary and to account for the variations and permissible errors in measurements. In some embodiments, the numerical values should be considered in the context and be rounded off to the appropriate significant figures. Notwithstanding that the numerical values set forth in some embodiments of this specification are approximations, in specific embodiments, numerical values are set forth to the nearest practical precision.
Claims
1. A microphone, comprising: The first acoustic structure includes a first sound guide tube and a first acoustic cavity, and the first acoustic structure has a first resonant frequency. A sound-to-electric converter is used to convert sound signals into electrical signals, and the sound-to-electric converter has a second resonant frequency. The second acoustic structure includes a second sound guide tube and a second acoustic cavity, and the second acoustic structure has a third resonant frequency. The first acoustic structure and the second acoustic structure are located on the same side of the same acoustic-electric converter, and the first acoustic structure and the second acoustic structure are acoustically connected to the same side of the same acoustic-electric converter; The third resonant frequency is different from the first resonant frequency, and the absolute value of the difference between the first resonant frequency or the third resonant frequency and the second resonant frequency is not less than 100Hz.
2. The microphone according to claim 1, characterized in that, The first resonant frequency is greater than the second resonant frequency, and the third resonant frequency is less than the second resonant frequency.
3. The microphone according to claim 1, characterized in that, The first resonant frequency is related to the structural parameters of the first acoustic structure, the second resonant frequency is related to the structural parameters of the acoustic-electric converter, and the third resonant frequency is related to the structural parameters of the second acoustic structure.
4. The microphone according to claim 3, characterized in that, The structural parameters of the first acoustic structure include one or more of the following: the shape of the first sound guide tube, the size of the first sound guide tube, the size of the first acoustic cavity, the acoustic resistance of the first sound guide tube or the first acoustic cavity, and the roughness of the inner surface of the sidewall forming the first sound guide tube. The structural parameters of the second acoustic structure include one or more of the following: the shape of the second sound guide tube, the size of the second sound guide tube, the size of the second acoustic cavity, the acoustic resistance of the second sound guide tube or the second acoustic cavity, and the roughness of the inner surface of the sidewall forming the second sound guide tube.
5. The microphone according to claim 4, characterized in that, The acoustic impedance ranges from 1 MKS Rayls to 100 MKS Rayls.
6. The microphone according to claim 1, characterized in that, The diameter of the first sound guide tube is no greater than twice its length, and the diameter of the second sound guide tube is no greater than twice its length.
7. The microphone according to claim 1, characterized in that, The roughness of the inner surface of the sidewall forming the first or second sound guide tube is not greater than 0.
8.
8. The microphone according to claim 1, characterized in that, The inner diameter of the first acoustic cavity or the second acoustic cavity is not less than its thickness.
9. The microphone according to claim 1, characterized in that, The sensitivity of the microphone at the first resonant frequency is greater than the sensitivity of the acoustic-electric transducer at the first resonant frequency, or The microphone has a greater sensitivity at the third resonant frequency than the acoustic-electric transducer has at the same frequency.
10. The microphone according to claim 1, characterized in that, The first sound guide tube is disposed on the cavity wall constituting the first acoustic cavity, and the second sound guide tube is disposed on the cavity wall constituting the second acoustic cavity.
11. The microphone according to claim 1, characterized in that, The acoustic-electric converter further includes a first aperture, through which the first acoustic cavity is acoustically connected to the acoustic-electric converter.
12. The microphone according to claim 1, characterized in that, The first acoustic cavity is acoustically connected to the electroacoustic converter, and the second acoustic cavity is acoustically connected to the outside of the microphone through the second sound guide tube, and also acoustically connected to the first acoustic cavity through the first sound guide tube.
13. The microphone according to claim 1, characterized in that, The microphone further includes a third acoustic structure, which includes a third sound guide tube, a fourth sound guide tube, and a third acoustic cavity. The first acoustic cavity is acoustically connected to the outside of the microphone through the first sound guide tube, and is acoustically connected to the third acoustic cavity through the third sound guide tube. The second acoustic cavity is acoustically connected to the external acoustic environment of the microphone via the second sound guide tube, and is also acoustically connected to the third acoustic cavity via the fourth sound guide tube. The third acoustic cavity is acoustically connected to the acoustic-to-electric converter, wherein... The third acoustic structure has a fourth resonant frequency, which is different from the third resonant frequency and the first resonant frequency.
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