A multi-mode low-temperature plasma metal surface thin film deposition device and method

Abstract

The present invention discloses a multi-mode low-temperature plasma metal surface thin film deposition device and method. A multi-mode low-temperature plasma metal surface thin film deposition device includes a synchronous transfer mechanism, multiple groups of first processing components and second processing components. The first processing components include two direct dielectric barrier discharge components, and the second processing components include two indirect dielectric barrier discharge components. Through the settings of the first processing components and the second processing components, it is possible to select to solely activate the first processing components for direct dielectric barrier discharge treatment to efficiently and rapidly deposit on the metal foil. It is also possible to solely activate the second processing components for indirect dielectric barrier discharge treatment. Additionally, it is possible to simultaneously activate the first processing components and the second processing components, using the first processing components to act as a pretreatment operation for the metal foil, and then using the second processing components for uniform deposition treatment.

Description

Technical Field

[0001] The present invention belongs to the technical field of metal surface thin film treatment, and particularly relates to a multi-mode low-temperature plasma metal surface thin film deposition device and method. Background Art

[0002] Thin film deposition is a technique used in industry to coat a thin layer on a specific designed component made of a target material and endow its surface with certain properties, such as improving the corrosion resistance of metals and the electrical properties of semiconductors. With the in-depth development of the modernization process, higher and higher requirements are put forward for the coatings on the material surface. Currently, the commonly used vacuum thin film deposition methods mainly include mechanical mixing, solid-phase method, hydrothermal method, sol-gel method, heterogeneous coagulation method, precipitation method, microemulsion method, deposition method, etc.

[0003] 1. The solid-phase method has high energy consumption, low efficiency, the powder is not fine enough, and impurities are easily mixed in;

[0004] 2. The hydrothermal method requires high-temperature and high-pressure steps, making it highly dependent on production equipment;

[0005] 3. The raw materials used in the sol-gel method are relatively expensive, some raw materials are organic substances, harmful to health, and the process takes a long time;

[0006] 4. The deoxidizer in the precipitation method may remain in the coating, affecting the performance of the coating;

[0007] 5. Physical vapor deposition is divided into vacuum evaporation plating, vacuum sputtering plating, and vacuum ion plating; the combination of the vacuum evaporation plating film and the substrate is not very tight. In addition, its coating speed is low and the diffraction property is poor; the ionization rate of vacuum sputtering plating is low and the bombardment of the substrate is not strong enough; due to the high temperature at the arc and the impact of ionized particles in vacuum ion plating, arc ion plating is extremely likely to generate some large particles, which seriously affects the coating quality; it is difficult to control the thickness and uniformity of the aerosol deposition coating. The raw materials required for chemical vapor deposition are flammable, explosive, toxic, and pollute the environment; moreover, the atomic layer deposition equipment is expensive;

[0008] 6. And the existing dielectric barrier discharge devices for metal surface thin film treatment are all one-sided treatments of direct dielectrics, with a narrow application range, and there is no good indirect treatment structure, and it is not suitable for some treatment methods that require the combination of direct dielectrics and indirect dielectrics. Summary of the Invention

[0009] The purpose of the present invention is to provide a multi-mode low-temperature plasma metal surface thin film deposition device and method to solve the problems.

[0010] To achieve the above object, the present invention provides the following technical solution: A multi-mode low-temperature plasma metal surface thin film deposition device, comprising a synchronous transfer mechanism, multiple groups of first processing components and second processing components. The first processing component includes two direct dielectric barrier discharge components, and the second processing component includes two indirect dielectric barrier discharge components;

[0011] The direct dielectric barrier discharge component includes an electrode opening and closing mechanism, a gas flowmeter and a first electrode. The gas flowmeter is fixedly arranged on the electrode opening and closing mechanism, and the first electrode is fixedly arranged at the bottom of the electrode opening and closing mechanism. The first electrode is located on the surface of the metal thin film to be processed without contact, and the metal thin film to be processed is grounded, and the generated plasma directly acts on the surface of the metal thin film to be processed;

[0012] The indirect dielectric barrier discharge component includes an electrode opening and closing mechanism, a second electrode and a gas flowmeter. The gas flowmeter is fixedly arranged on the electrode opening and closing mechanism, and the second electrode is fixedly arranged on the side of the electrode opening and closing mechanism close to the metal to be processed. The high- and low-voltage electrodes in the second electrode are arranged side by side in an alternating manner, and are located on the surface of the metal thin film to be processed without contact. The plasma generated in the cavity between the high- and low-voltage electrodes is sprayed onto the surface of the metal thin film to be processed;

[0013] Discharge rollers are arranged inside both the direct dielectric barrier discharge component and the indirect dielectric barrier discharge component, and the discharge rollers of the first processing component and the second processing component are of different sizes, so as to adjust the processing time in different modes and ensure the processing effect.

[0014] Preferably, both the first electrode and the second electrode include multiple cylindrical solid tungsten copper alloys. The multiple high-voltage cylindrical solid tungsten copper alloys on the first electrode are arranged in a linear and integral manner, and the multiple cylindrical solid tungsten copper alloys on the second electrode are arranged in a linear and integral manner with high- and low-voltage alternating.

[0015] Preferably, the electrode opening and closing mechanism further includes a ventilation hole and a high-voltage wire. The ventilation hole is opened on the electrode opening and closing mechanism, and the high-voltage wire is fixedly connected to the electrode opening and closing mechanism. The high-voltage wires on the electrode opening and closing mechanisms of the first processing component and the second processing component are electrically connected to a first high-voltage nanosecond pulse power supply and a second high-voltage nanosecond pulse power supply respectively.

[0016] A method for using a multi-mode low-temperature plasma metal surface thin film deposition device, characterized in that the steps are as follows:

[0017] Step 1: Selection of power-on mode. Any one of the following three modes can be selected: only the first electrode in the first processing component is turned on for direct dielectric barrier discharge treatment, or only the second electrode in the second processing component is turned on for indirect dielectric barrier discharge treatment, or both the first electrode and the second electrode in the first processing component and the second processing component are turned on for direct-indirect dielectric barrier discharge hybrid treatment;

[0018] Step 2: Preset the flow rate of the gas. Introduce the working gas with a set flow rate into the gas flowmeter at the first electrode or the second electrode to measure the flow rate of the working gas, and it is detected that the flow rate reaches the preset flow rate;

[0019] Step 3: When performing direct dielectric barrier discharge treatment:

[0020] (1) Direct dielectric barrier discharge treatment;

[0021] After introducing the working gas, which is a mixture of the discharge gas and the thin film deposition medium gas with a set flow rate, into the first electrode, then start the synchronous transfer mechanism. The synchronous transfer mechanism sends the metal to be processed into the gap between the first electrodes of the direct dielectric barrier discharge treatment mechanism. The high-voltage current discharged from the cylindrical solid tungsten-copper alloy of the first electrode and the metal to be processed are grounded together through the discharge roller, and the discharge occurs from top to bottom;

[0022] When performing indirect dielectric barrier discharge treatment:

[0023] (2) Indirect dielectric barrier discharge treatment. The working gas, which is a mixture of the discharge gas and the thin film deposition medium gas with a set flow rate, is introduced into the high-low voltage staggered electrodes. The multiple second electrodes of the cylindrical solid tungsten-copper alloy on the electrode opening and closing mechanism in the indirect dielectric barrier discharge treatment mechanism are arranged in a staggered manner as high-low voltage electrodes. The gas between the high-low voltage electrodes is discharged and broken down to generate low-temperature plasma, and the plasma is blown out of the discharge area by the gas blown out through the ventilation holes to perform indirect dielectric barrier discharge treatment;

[0024] When performing direct-indirect dielectric barrier discharge hybrid treatment:

[0025] (3) Direct-indirect dielectric barrier discharge synchronous treatment. First, start the two groups of direct dielectric barrier discharge components in the first processing component to perform direct dielectric barrier discharge treatment on the front and back sides of the metal foil, and then start the two groups of indirect dielectric barrier discharge treatments in the second processing component to complete the treatment of the front and back sides.

[0026] The technical effects and advantages of the present invention:

[0027] 1. Through the settings of the first processing component and the second processing component, the present invention can select to solely activate the first processing component for direct dielectric barrier discharge treatment to efficiently and rapidly deposit on a metal foil. It can also solely activate the second processing component for indirect dielectric barrier discharge treatment. Since it is directly in the discharge area, the discharge is relatively uniform, which is suitable for deeply cleaning and uniformly treating the metal to be processed. By discharging between the high-voltage and low-voltage electrodes to break down the gas to generate low-temperature plasma, and using an air pump to blow the plasma out of the discharge area to reach the surface of the metal to be processed for surface modification treatment, thus uniformly depositing on the surface of the metal foil. It can also simultaneously activate the first processing component and the second processing component. Use the first processing component to act as a pretreatment operation for the metal foil, and then use the second processing component for uniform deposition treatment, thereby achieving efficient and uniform deposition treatment of the metal foil. Overall, the present invention can perform multiple processes and can be freely transformed according to requirements. In this processing mode, the metal to be processed is subjected to plasma treatment outside the discharge area, the discharge intensity is weak, and the treatment is relatively gentle, which is suitable for low-speed treatment of sensitive materials with low mechanical strength. The whole process can not only achieve the metal thin film treatment of direct dielectric barrier discharge and the metal thin film treatment of indirect dielectric barrier discharge, but also achieve the effect of sequentially treating a metal to be processed with direct dielectric and indirect dielectric;

[0028] 2. Through the settings of the first processing component and the second processing component, the present invention can achieve double-sided and single-sided treatment of the metal foil, and can be freely transformed according to controlling the activation of the first processing component and the second processing component; Discharge guide rollers are provided inside both the direct dielectric barrier discharge component and the indirect dielectric barrier discharge component. Since the required processing rates for direct dielectric barrier discharge and indirect dielectric barrier discharge are different, two discharge guide rollers with different diameters are set. By using a smaller front roller and a larger rear roller, it can ensure that the two discharge groups are at different processing rates, thereby adjusting the processing time in different modes and ensuring the processing effect, thus increasing the applicability of the present invention and expanding the application range. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] Figure 1 is a schematic structural diagram of the present invention;

[0030] Figure 2 is a schematic diagram of the direct dielectric barrier discharge component of the present invention;

[0031] Figure 3 is a schematic diagram of the indirect dielectric barrier discharge component of the present invention;

[0032] Figure 4 is a schematic diagram of the electrode opening and closing mechanism of the present invention;

[0033] Figure 5 is a working flowchart of the present invention.

[0034] In the figure: 1. Synchronous transfer mechanism; 2. Electrode opening and closing mechanism; 201. Cylindrical solid tungsten copper alloy; 203. High-voltage wire; 204. Vent hole; 3. First electrode; 4. First high-voltage nanosecond pulse power supply; 5. Second high-voltage nanosecond pulse power supply; 6. Gas flowmeter; 7. First processing component; 8. Second processing component; 9. Second electrode. Specific embodiments

[0035] Next, the technical solutions in the embodiments of the present invention will be clearly and completely described in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.

[0036] The present invention provides a multi-mode low-temperature plasma metal surface thin film deposition device as shown in Figure 1 、 2 and Figure 4 , including a synchronous transfer mechanism 1, multiple groups of first processing components 7 and second processing components 8. The first processing component 7 includes two direct dielectric barrier discharge components, and the second processing component 8 includes two indirect dielectric barrier discharge components;

[0037] The direct dielectric barrier discharge component includes an electrode opening and closing mechanism 2, a gas flowmeter 6 and a first electrode 3. The gas flowmeter 6 is fixedly arranged on the electrode opening and closing mechanism 2, and the first electrode 3 is fixedly arranged at the bottom of the electrode opening and closing mechanism 2. The first electrode 3 is located on the surface of the metal thin film to be processed without contact, and the metal thin film to be processed is grounded. The generated plasma is sprayed onto the surface of the metal thin film to be processed. Both the first electrode 3 and the second electrode 9 include multiple cylindrical solid tungsten copper alloys 201. The multiple high-voltage cylindrical solid tungsten copper alloys on the first electrode 3 are linearly arranged in a row, and the multiple cylindrical solid tungsten copper alloys on the second electrode 9 are linearly arranged in a row and are arranged with high and low voltages staggered;

[0038] The indirect dielectric barrier discharge component includes an electrode opening and closing mechanism 2, a second electrode 9, and a gas flow meter 6. The gas flow meter 6 is fixedly arranged on the electrode opening and closing mechanism 2. The second electrode 9 is fixedly arranged on the side of the electrode opening and closing mechanism 2 close to the metal to be processed. In the second electrode 9, high-voltage and low-voltage electrodes are arranged side by side in an alternating manner and are located on the surface of the metal film to be processed without contact. The plasma generated in the cavity between the high-voltage and low-voltage electrodes directly acts on the surface of the metal film to be processed. The electrode opening and closing mechanism 2 further includes a ventilation hole 204 and a high-voltage wire 203. The ventilation hole 204 is opened on the electrode opening and closing mechanism 2. The high-voltage wire 203 is fixedly connected to the electrode opening and closing mechanism 2, and the high-voltage wires 203 on the electrode opening and closing mechanisms 2 of the first processing component 7 and the second processing component 8 are electrically connected to the first high-voltage nanosecond pulse power supply 4 and the second high-voltage nanosecond pulse power supply 5 respectively;

[0039] Discharge rollers are arranged inside both the direct dielectric barrier discharge component and the indirect dielectric barrier discharge component, and the discharge rollers of the first processing component 7 and the second processing component 8 are of different sizes, so as to adjust the processing time in different modes and ensure the processing effect.

[0040] As Figure 1 、 2 、3, 4 and Figure 5 shown, a method for using a multi-mode low-temperature plasma metal surface film deposition device is characterized in that the steps are as follows:

[0041] Step 1: Selection of power-on mode. It is possible to select any one of the three modes: only turning on the first electrode 3 in the first processing component 7 for direct dielectric barrier discharge treatment, or only turning on the second electrode 9 in the second processing component 8 for indirect dielectric barrier discharge treatment, or simultaneously turning on the first electrode 3 and the second electrode 9 in the first processing component 7 and the second processing component 8 for direct-indirect dielectric barrier discharge hybrid treatment;

[0042] Step 2: Presetting the flow rate of the gas. The working gas with a set flow rate is introduced into the gas flow meter at the first electrode 3 or the second electrode 9 to measure the flow rate of the working gas, and it is detected that the flow rate reaches the preset flow rate;

[0043] Step 3: When performing direct dielectric barrier discharge treatment:

[0044] (1) Direct dielectric barrier discharge treatment;

[0045] After introducing the working gas, which is formed by mixing the discharge gas and the thin film deposition medium gas with a set flow rate, into the first electrode 3, the synchronous transfer mechanism 1 is then started. The synchronous transfer mechanism 1 sends the metal to be processed into the gap between the first electrodes 3 in the direct dielectric barrier discharge processing mechanism. The high-voltage current discharged through the cylindrical solid tungsten copper alloy 201 of the first electrode 3 and the metal to be processed are grounded together by using the discharge roller, and the discharge occurs from top to bottom;

[0046] When performing indirect dielectric barrier discharge treatment:

[0047] (2) Indirect dielectric barrier discharge treatment. The working gas, which is formed by mixing the discharge gas and the thin film deposition medium gas with a set flow rate, is introduced into the high- and low-voltage staggered electrodes. The multiple second electrodes 9 of the cylindrical solid tungsten copper alloy 201 on the electrode opening and closing mechanism 2 in the indirect dielectric barrier discharge processing mechanism are arranged in a staggered manner as high- and low-voltage electrodes. The gas between the high- and low-voltage electrodes is discharged and broken down to generate low-temperature plasma, and the plasma is blown out of the discharge area by the gas blown out through the vent holes 204 to perform indirect dielectric barrier discharge treatment;

[0048] When performing direct-indirect dielectric barrier discharge hybrid treatment:

[0049] (3) Direct-indirect dielectric barrier discharge synchronous treatment. First, start the two groups of direct dielectric barrier discharge components in the first processing component 7 to perform direct dielectric barrier discharge treatment on the front and back sides of the metal foil, and then start the two groups of indirect dielectric barrier discharge treatments in the second processing component 8 to achieve the treatment of the front and back sides.

[0050] Finally, it should be noted that the above are only the preferred embodiments of the present invention and are not used to limit the present invention. Although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art can still modify the technical solutions recorded in the foregoing embodiments or perform equivalent replacements for some of the technical features. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principle of the present invention shall be included in the protection scope of the present invention.

Claims

1. A multi-mode low-temperature plasma metal surface thin film deposition device, characterized in that: it includes a synchronous transmission mechanism (1), multiple groups of first processing components (7) and second processing components (8), the first processing component (7) includes two direct dielectric barrier discharge components, and the second processing component (8) includes two indirect dielectric barrier discharge components; The direct dielectric barrier discharge component includes an electrode opening and closing mechanism (2), a gas flow meter (6) and a first electrode (3), the gas flow meter (6) is fixedly arranged on the electrode opening and closing mechanism (2), the first electrode (3) is fixedly arranged at the bottom of the electrode opening and closing mechanism (2), the first electrode (3) is located on the surface of the metal thin film to be processed without contact, and the metal thin film to be processed is grounded through a discharge guide roller, and the generated plasma directly acts on the surface of the metal thin film to be processed; The indirect dielectric barrier discharge component includes an electrode opening and closing mechanism (2), a second electrode (9) and a gas flow meter (6), the gas flow meter (6) is fixedly arranged on the electrode opening and closing mechanism (2), the second electrode (9) is fixedly arranged on the side of the electrode opening and closing mechanism (2) close to the metal to be processed, the high- and low-voltage electrodes in the second electrode (9) are arranged side by side in an alternating manner, and are located on the surface of the metal thin film to be processed without contact, and the plasma generated in the cavity between the high- and low-voltage electrodes is sprayed on the surface of the metal thin film to be processed; The first electrode (3) and the second electrode (9) both include multiple cylindrical solid tungsten copper alloys (201), and the multiple high-voltage cylindrical solid tungsten copper alloys on the first electrode (3) are arranged linearly in a whole row, and the multiple cylindrical solid tungsten copper alloys on the second electrode (9) are arranged linearly in a whole row and are arranged in a high-low voltage staggered manner. Discharge guide rollers are arranged inside both the direct dielectric barrier discharge component and the indirect dielectric barrier discharge component, and the diameters of the discharge guide rollers of the first processing component (7) and the second processing component (8) are different; The electrode opening and closing mechanism (2) further includes a ventilation hole (204) and a high-voltage wire (203), the ventilation hole (204) is opened on the electrode opening and closing mechanism (2), the high-voltage wire (203) is fixedly connected to the electrode opening and closing mechanism (2), and the high-voltage wires (203) on the electrode opening and closing mechanisms (2) of the first processing component (7) and the second processing component (8) are respectively electrically connected to a first high-voltage nanosecond pulse power supply (4) and a second high-voltage nanosecond pulse power supply (5).

2. A method for using the multi-mode low-temperature plasma metal surface thin film deposition device according to claim 1, characterized in that: The steps are as follows: Step 1: Power-on mode selection, and any one of the three modes can be selected, that is, only the first electrode (3) in the first processing component (7) is turned on for direct dielectric barrier discharge treatment, or only the second electrode (9) in the second processing component (8) is turned on for indirect dielectric barrier discharge treatment, or the first electrode (3) and the second electrode (9) in the first processing component (7) and the second processing component (8) are turned on simultaneously for direct-indirect dielectric barrier discharge hybrid treatment; Step 2: Preset the flow rate of the gas, introduce the working gas with a set flow rate to the first electrode (3) or the second electrode (9), measure the flow rate of the working gas with a gas flow meter, and detect that the flow rate reaches the preset flow rate; Step 3: When performing direct dielectric barrier discharge treatment: Direct dielectric barrier discharge treatment; After introducing the working gas, which is a mixture of the discharge gas and the thin film deposition medium gas with a set flow rate, to the first electrode (3), start the synchronous transfer mechanism (1). The synchronous transfer mechanism (1) sends the metal to be processed into the gap between the first electrode (3) and the discharge guide roller in the direct dielectric barrier discharge treatment mechanism. A high-voltage current is discharged through the cylindrical solid tungsten copper alloy (201) of the first electrode (3), and the metal to be processed is grounded by the discharge guide roller, resulting in a top-down discharge; When performing indirect dielectric barrier discharge treatment: Indirect dielectric barrier discharge treatment. In the electrode opening and closing mechanism (2) of the indirect dielectric barrier discharge treatment mechanism, the cylindrical solid tungsten copper alloys (201) of multiple second electrodes (9) are arranged with high- and low-voltage electrodes staggered. After introducing the working gas, which is a mixture of the discharge gas and the thin film deposition medium gas with a set flow rate, to the high- and low-voltage electrodes, the gas between the high- and low-voltage electrodes is discharged and broken down to generate low-temperature plasma, and the plasma is blown out of the discharge area by the gas blown out through the ventilation holes (204) to perform indirect dielectric barrier discharge treatment; When performing direct-indirect dielectric barrier discharge hybrid treatment: Direct-indirect dielectric barrier discharge synchronous treatment. First, start the two groups of direct dielectric barrier discharge components in the first treatment component (7) to perform direct dielectric barrier discharge pretreatment on the front and back sides of the metal foil, and then start the two groups of indirect dielectric barrier discharge treatments in the second treatment component (8) to achieve thin film deposition treatment on the front and back sides.

Images