A semiconductor device test data format conversion method, device and storage medium

Abstract

The application provides a semiconductor device test data format conversion method, device and storage medium, and the method comprises the following steps: opening an original test data summary file, and obtaining input voltage data and output voltage data; traversing input voltage in the input voltage data and output voltage in the output voltage data, combining the input voltage and the output voltage; opening single-point data files associated with the input voltage and the output voltage in sequence, obtaining required data from each single-point data file, and writing the required data and corresponding input voltage and output voltage into a target MDF file. The application can convert the original data format output by a test instrument in an electronic component parameter test process into an MDF format file which can be read by an analysis tool software system such as ADS without changing the original data.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of computer, in particular to a semiconductor device test data format conversion method and device and storage medium. BACKGROUND

[0002] In the process of testing electronic element electrical parameters of electrical equipment, the original data format output by the test instrument is mostly.CSV or.s2p file, etc., but the ADS and other analysis tool software systems cannot read this type of data file, so it is necessary to convert the original data file into text format, such as converting into.MDF (Measurement Data Format) format file, so that the ADS system can directly read the data file.

[0003] Since the original test data of the test instrument platform is often saved as multiple single-point data files according to different test parameters, the original test data file records all the detailed information during the test, and only a part of the useful data information is obtained, and by manually changing the file format one by one, the workload is huge, complex and prone to errors. SUMMARY

[0004] In order to solve the above technical problems, the present application provides a semiconductor device test data format conversion method, device and storage medium, which can quickly locate the required data in the original data file without changing the original data, and convert it into a MDF format file that can be read by the ADS and other analysis tool software systems, which is simple and fast to convert and not prone to errors.

[0005] The present application adopts the following technical solutions:

[0006] On the one hand, a test data format conversion method comprises:

[0007] Opening an original test data summary file to obtain input voltage data and output voltage data;

[0008] Traversing the input voltage in the input voltage data and the output voltage in the output voltage data, and combining the input voltage and the output voltage;

[0009] Opening single-point data files associated with the input voltage and the output voltage in turn, obtaining required data from each single-point data file, and writing the required data and corresponding input voltage and output voltage into a target MDF file.

[0010] Preferably, the data summary file comprises a CSV file; and the single-point data file comprises a CSV file, an S2P file or an S3P file.

[0011] Preferably, after opening the original test data summary file, it further comprises:

[0012] determining whether the contents in the original test data summary table are empty, if empty, not performing the following steps.

[0013] Preferably, before writing the required data and corresponding input voltage and output voltage into the target MDF file, further comprising:

[0014] creating an empty target MDF file.

[0015] Preferably, the file name of the single-point data file comprises the input voltage and the output voltage.

[0016] Preferably, the required data comprises comment information starting with! and test data information; the test data information comprises declaration information starting with # and data information.

[0017] Preferably, writing the required data and corresponding input voltage and output voltage into the target MDF file comprises:

[0018] writing the input voltage and the output voltage into the target MDF file as index information part; wherein the input voltage is identified by varvg and the output voltage is identified by var vd;

[0019] writing the comment information starting with! in the required data into the target MDF file as comment part;

[0020] writing the declaration starting with Begin into the target MDF file as the head of the test data part;

[0021] writing the declaration information starting with # in the required data below the declaration starting with Begin;

[0022] writing the declaration starting with % below the declaration information starting with # according to the data information in the required data;

[0023] writing the data information in the required data below the declaration starting with %;

[0024] writing the declaration starting with End below the data information as the tail of the test data part.

[0025] Preferably, after writing the required data and corresponding input voltage and output voltage into the target MDF file, further comprising:

[0026] saving the file data and closing the file after saving is completed.

[0027] In a second aspect, a semiconductor device test data format conversion device comprises:

[0028] a summary table file reading module for opening an original test data summary table file to obtain input voltage data and output voltage data;

[0029] The input-output voltage combination module is configured to combine the input voltage and the output voltage by traversing the input voltage in the input voltage data and the output voltage in the output voltage data.

[0030] The target file writing module is configured to open the single-point data files associated with the input voltage and the output voltage in sequence, obtain required data from each single-point data file, and write the required data and the corresponding input voltage and output voltage into a target MDF file.

[0031] In a third aspect, a computer readable storage medium has computer program instructions stored thereon, and the computer program instructions are executed by a processor to implement a semiconductor device test data format conversion method.

[0032] The present application has the following advantages:

[0033] (1) The present application is based on the original test data summary file, and the input voltage data and the output voltage data can be obtained. The corresponding single-point data file (including single-point scanning test data) is obtained according to the combination of each input voltage and output voltage. All single-point data files are traversed, and the required data and the corresponding input voltage and output voltage are written into a target MDF file, so that the test data format is quickly converted.

[0034] (2) The data format conversion program written by using the Visual Basic programming environment in Excel can convert multiple original data files into the required.MDF format, and the operation is simple and convenient, and errors are not easy to occur.

[0035] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed in the embodiment description will be briefly introduced. Obviously, the drawings described below are only some embodiments of the present application, and other drawings can be obtained by those skilled in the art without creative labor. BRIEF DESCRIPTION OF DRAWINGS

[0036] Figure 1 The basic flowchart of the semiconductor device test data format conversion method of the embodiment of the present application;

[0037] Figure 2 The input voltage data and the output voltage data in the original test data summary file of the embodiment of the present application are shown in the schematic diagram;

[0038] Figure 3 The file name of the single-point data file of the embodiment of the present application is shown in the schematic diagram;

[0039] Figure 4A single-point data file data schematic diagram of an embodiment of the present application;

[0040] Figure 5 A target MDF file data schematic diagram of an embodiment of the present application;

[0041] Figure 6 A detailed flowchart of a semiconductor device test data format conversion method of an embodiment of the present application;

[0042] Figure 7 A control interface schematic diagram of a semiconductor device test data format conversion method of an embodiment of the present application;

[0043] Figure 8 A structural block diagram of a semiconductor device test data format conversion device of an embodiment of the present application. DETAILED DESCRIPTION

[0044] The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only some of the embodiments of the present application, but not all the embodiments of the present application. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative work fall within the protection scope of the present application.

[0045] In the description of the present application, it should be noted that the terms “comprise”, “contain” or any other variants thereof are intended to cover non-exclusive inclusion, so that the process, method, article or device comprising a series of elements not only includes those elements, but also includes other elements not explicitly listed or inherent to such process, method, article or device. Without more limitation, the element defined by the statement “comprises a” does not exclude the presence of another identical element in the process, method, article or device comprising the element.

[0046] In the description of the present application, it should be noted that, unless otherwise explicitly specified and limited, the step identifiers S101, S102, S103, etc. are only used for convenient description, and do not represent the execution sequence. The corresponding execution sequence can be adjusted as needed.

[0047] Referring to Figure 1 The semiconductor device test data format conversion method of the present application comprises:

[0048] S101, opening an original test data summary file to obtain input voltage data and output voltage data;

[0049] S102, traversing the input voltage in the input voltage data and the output voltage in the output voltage data, and combining the input voltage and the output voltage;

[0050] S103: Open the single-point data files associated with the input voltage and output voltage in sequence, obtain the required data from each single-point data file, and write the required data and the corresponding input voltage and output voltage into the target MDF file.

[0051] In this embodiment, the original test data summary file includes a summary of all parameters involved in the test process, such as voltage bias (input voltage, output voltage list), etc.; the single-point data file stores the measured data corresponding to different input voltages and output voltages. Specifically, the data summary file includes a CSV file; the single-point data file includes a CSV file, an S2P file, or an S3P file.

[0052] Specifically, after opening the original test data master table file, it also includes:

[0053] Check if the contents of the original test data table are empty. If they are empty, do not execute the subsequent steps.

[0054] Specifically, before writing the required data and corresponding input-output voltages into the target MDF file, the following steps are also included:

[0055] Create an empty target MDF file for data writing.

[0056] See Figure 2 The diagram shown illustrates the input and output voltage data in the original test data summary file of this embodiment. In step S101, the original test data summary file is opened to obtain the input and output voltage data, specifically including:

[0057] Open the CSV file, locate the "!Non-Quiescent Input Voltage List(volts)" field, and retrieve all input voltage data following this field. Figure 2 The input voltage data includes -5, -4.5, -4, -3.5...; locate the "!Non-Quiescent Output Voltage List(volts)" field and retrieve all output voltage data following this field. Figure 2 The output voltage data includes 0, 2, 4, 6...

[0058] Correspondingly, in S102, the input voltage in the input voltage data and the output voltage in the output voltage data are traversed, and the input voltage and output voltage are combined, specifically including:

[0059] The input voltage data in the input voltage data is traversed, and the input voltage is combined with the output voltage data in the output voltage data.

[0060] In the specific combination, each input voltage is combined with all output voltages, and the same is true for the other input voltages. For example, the input voltage -5 is combined with 0, 2, 4, and 6 to form four groups of input voltage-output voltage (-5, 0), (-5, 2), (-5, 4), and (-5, 6). The input voltage -4.5 is combined with 0, 2, 4, and 6 to form four groups of input voltage-output voltage (-4.5, 0), (-4.5, 2), (-4.5, 4), and (-4.5, 6).

[0061] It should be noted that the specific combination can also be the sequential combination of the output voltage and the input voltage. It can be understood that the input voltage is in front of the output voltage, or the output voltage is in front of the input voltage. The specific setting is based on the needs, and the present embodiment is not limited.

[0062] It should be noted that the semiconductor device described in the present application can be a GaAs semiconductor device, a GaN semiconductor, etc. When applied to GaAs PHEMT semiconductor device testing, the input voltage data and output voltage data of the GaAs PHEMT semiconductor device need to be obtained. Correspondingly, the input voltage is the voltage between the gate and the source, and the output voltage is the voltage between the drain and the source. When applied to GaAs HBT semiconductor device testing, the input voltage data and output voltage data of the GaAs HBT semiconductor device need to be obtained. Correspondingly, the input voltage is the voltage between the base and the collector, and the output voltage is the voltage between the emitter and the collector. When applied to GaN HEMT semiconductor device testing, the input voltage data and output voltage data of the GaN HEMT semiconductor device need to be obtained. Correspondingly, the input voltage is the voltage between the gate and the source, and the output voltage is the voltage between the drain and the source.

[0063] Referring to Figure 3 As shown in the file name schematic diagram of the two single-point data files of the present embodiment, the file name is spliced by a string. Take the single-point file "10x100-09_100mA_mm_Pulse_0VoutQ_-4.5Vin_0Vout" as an example for explanation. 10x100-09_100mA_mm_Pulse_0VoutQ_" is the fixed format part of the machine, -4.5Vin" in -4.5 is the input voltage in a group of input voltage-output voltage, and "0Vout" in 0 is the corresponding output voltage.

[0064] In S103, the single-point data files associated with the input voltage and the output voltage are opened in sequence, the required data is obtained from each single-point data file, and the required data and the corresponding input voltage and output voltage are written into the target MDF file. Specifically, the steps include:

[0065] S1031, a set of input voltage and output voltage is read;

[0066] S1032, according to the file name naming rule of the single-point data file, the corresponding single-point data file is opened, and the required data and the corresponding input voltage and output voltage are written into the target MDF file;

[0067] S1033, the next set of input voltage and output voltage is read, and step S1032 is repeated until all input voltage and output voltage are read.

[0068] It should be noted that in the embodiment, S102 and S103 can be to open a single-point data file for each set of input voltage and output voltage, write the required data in the single-point data file into the target MDF file, and then close the single-point data file, and then open the next set of input voltage and output voltage corresponding to the single-point data file and write it. In other embodiments, S102 and S103 can also be to open all single-point data files, and then write them in sequence. The specific processing can be performed according to actual needs, and the embodiment does not limit it as long as the required data in the single-point data file can be written into the target MDF file.

[0069] Referring to Figure 4 the single-point data file data diagram of the embodiment, the required data includes the annotation information starting with! and the test data information; the test data information includes the declaration information starting with # and the data information.

[0070] The required data and the corresponding input voltage and output voltage are written into the target MDF file, which specifically includes:

[0071] The input voltage and the output voltage are written into the target MDF file as index information part; wherein the input voltage is identified by varvg, and the output voltage is identified by var vd;

[0072] The annotation information starting with! in the required data is written into the target MDF file as an annotation part;

[0073] The declaration starting with Begin is written into the target MDF file as the head of the test data part;

[0074] The declaration information starting with # in the required data is written below the declaration starting with Begin;

[0075] Write the declaration starting with % under the declaration information starting with # according to the data information in the required data;

[0076] Write the data information in the required data under the declaration starting with %;

[0077] Write the declaration starting with End under the data information as the end of the test data part.

[0078] Specifically, the MDF format file is a file for indexable assignment of variables, and the file structure can repeatedly assign variables as needed. Referring to Figure 5 The data format of the embodiment is shown below, which is mainly divided into three parts:

[0079] 1. Index information part: the variables assigned later are assigned in multiple groups according to the index value, and the index can be multi-dimensional (with two dimensions of vg and vd shown in the figure);

[0080] 2. Annotation part: the line declared with the keyword "!" serves as an annotation and does not participate in the actual reading of variables. In this embodiment, it is specifically a test log automatically generated by the machine;

[0081] 3. Test data part: variable assignment or reading information. The information of each index dimension is declared at the beginning with the keywords "Begin" and "End". (The figure shows a group of S parameters for the dimension of vg=-5 and vd=0.) The "%" keyword indicates the assignment table header of the variable under the current index dimension (vg=-5, vd=0) (the example shown in the figure is the 8 variable dimensions of S parameters).

[0082] "#": declaration function, indicating that the following data is small signal data; Hz: frequency unit, indicating the unit of the following F; S indicates that the following small signal parameter type is S parameter; RI (Real, Imaginary) indicates that the following small signal parameter format is real part and imaginary part (for example, n11x: real part of S11; n11y: imaginary part of S11); R 50: normalized impedance is 50 ohms.

[0083] "%": header, declaration function; F: frequency; n11x n11y n21x n21y n12x n12y n22x n22y: where n represents the type of small signal parameter, which depends on the type selected above; x represents the real part; y represents the imaginary part; 11 21 12 22 are four coefficients of S parameters, i.e., two-port network data.

[0084] In this embodiment, after writing the required data and the corresponding input voltage and output voltage into the target MDF file, the following steps are further included:

[0085] Save the file data, and close the file after saving is completed.

[0086] Referring to Figure 6 As shown in the figure, the detailed flow chart of the semiconductor device test data format conversion method of the embodiment based on the above content.

[0087] The semiconductor device test data format conversion method of the embodiment can be implemented and executed on a PC or other electronic equipment.

[0088] Specifically, a data format conversion program is written by using the Visual Basic programming environment in Excel, so as to combine multiple original data files (including one original test data summary table file and multiple single-point data files) into one and convert them into the required.MDF format.

[0089] The specific operation includes: placing multiple original data files and program files under the same folder, opening the single-point data file according to different parameter values (input voltage and output voltage combination) in the original test data summary table file and screening the required original test data, and then writing the original test data into a newly created file (*.MDF) according to the set format requirements.

[0090] Referring to Figure 7 As shown in the figure, the control interface schematic diagram of the embodiment is shown, and clicking“step1: mdf file name” can create an empty MDF file, and clicking“step2: conversion” can realize the semiconductor device test data format conversion of the embodiment. It should be noted that the above control can also include only one, and clicking one control can realize the functions of creating an empty MDF file and conversion. The embodiment is not limited to the implementation according to the needs.

[0091] The application realizes the fast conversion of test data format under the precondition of ensuring data accuracy through the program.

[0092] Referring to Figure 8 As an implementation of the method shown in the above figures, the application provides an embodiment of a semiconductor device test data format conversion device, which corresponds to the method embodiment shown in Figure 1 The device can be applied to various electronic equipment.

[0093] The semiconductor device test data format conversion device of the application comprises:

[0094] The summary table file reading module 801 is configured to open the original test data summary table file, and obtain input voltage data and output voltage data.

[0095] The input-output voltage combination module 802 is configured to combine input voltages in the input voltage data and output voltages in the output voltage data;

[0096] The target file writing module 803 is configured to open the single-point data files associated with the input-output voltage in sequence, acquire required data from each single-point data file, and write the required data and corresponding input voltages and output voltages into a target MDF file.

[0097] From the above description of the embodiments, those skilled in the art can clearly understand that the present application can be implemented by means of software and the necessary universal hardware platform. Based on such an understanding, the technical solutions of the present application can be embodied in the form of a software product, which can be stored in a storage medium, such as a ROM / RAM, a magnetic disk, an optical disk, etc., and includes a number of instructions for causing a computer device (which can be a personal computer, a server, or a network device, etc.) to execute the methods described in the various embodiments or some parts of the embodiments of the present application.

[0098] The above description is only the preferred embodiments of the present application; however, the protection scope of the present application is not limited to this. Any person skilled in the art, within the technical scope disclosed in the present application, according to the technical solutions of the present application and the improved concept thereof, can make equivalent replacements or changes, which should be covered in the protection scope of the present application.

Claims

1. A method of converting a test data format for a semiconductor device, characterized by, The method comprises the following steps: opening an original test data summary file to obtain input voltage data and output voltage data; traversing the input voltage in the input voltage data and the output voltage in the output voltage data, and combining the input voltage and the output voltage; opening single-point data files associated with the input voltage and the output voltage in sequence, obtaining required data from each single-point data file, and writing the required data and corresponding input voltage and output voltage into a target MDF file; the single-point data file comprises a CSV file, an S2P file or an S3P file; the required data comprises annotation information starting with! and test data information; the test data information comprises declaration information starting with # and data information; writing the required data and corresponding input voltage and output voltage into the target MDF file, specifically comprising: writing the input voltage and the output voltage into the target MDF file as index information part; wherein the input voltage is identified by var vg, and the output voltage is identified by var vd; writing the annotation information starting with! in the required data into the target MDF file as an annotation part; writing the declaration starting with Begin into the target MDF file as the head of the test data part; writing the declaration information starting with # in the required data below the declaration starting with Begin; writing the declaration starting with % below the declaration information starting with # according to the data information in the required data; writing the data information in the required data below the declaration starting with %; writing the declaration starting with End below the data information as the tail of the test data part.

2. The semiconductor device test data format conversion method according to claim 1, characterized by, The data summary file comprises a CSV file.

3. The semiconductor device test data format conversion method of claim 1, wherein, After opening the original test data summary file, the method further comprises the following steps: determining whether the content in the original test data summary file is empty, and if the content is empty, not executing the subsequent steps.

4. The semiconductor device test data format conversion method of claim 1, wherein, Before writing the required data and corresponding input voltage and output voltage into the target MDF file, the method further comprises the following step: creating an empty target MDF file.

5. The semiconductor device test data format conversion method of claim 1, wherein, The file name of the single-point data file comprises the input voltage and the output voltage.

6. The semiconductor device test data format conversion method of claim 1, wherein, After writing the required data and corresponding input voltage and output voltage into the target MDF file, the method further comprises the following steps: saving file data and closing the file after saving is completed.

7. A semiconductor device test data format conversion apparatus characterized by comprising: The method comprises the following steps: a summary file reading module for opening an original test data summary file to obtain input voltage data and output voltage data; an input-output voltage combining module for traversing the input voltage in the input voltage data and the output voltage in the output voltage data, and combining the input voltage and the output voltage; a target file writing module for opening single-point data files associated with the input voltage and the output voltage in sequence, obtaining required data from each single-point data file, and writing the required data and corresponding input voltage and output voltage into a target MDF file; the single-point data file comprises a CSV file, an S2P file or an S3P file; the required data comprises annotation information starting with! and test data information; the test data information comprises declaration information starting with # and data information; writing the required data and corresponding input voltage and output voltage into the target MDF file, specifically comprising: writing input voltage and output voltage in the target MDF file as index information part; wherein the input voltage is identified by var vg, and the output voltage is identified by var vd; writing the comment information in the required data starting with! in the target MDF file as comment part; writing the declaration starting with Begin in the target MDF file as the head of the test data part; writing the declaration information in the required data starting with # below the declaration starting with Begin; writing the declaration starting with % according to the data information in the required data below the declaration information starting with #; writing the data information in the required data below the declaration starting with %; writing the declaration starting with End below the data information as the tail of the test data part.

8. A computer-readable storage medium, characterized in that, The computer readable storage medium stores computer program instructions, and the computer program instructions are executed by the processor to implement the method in any one of claims 1-6.

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