Preparation method of self-powered CsCu2I3 thin film ultraviolet photodetector

Abstract

The application discloses a preparation method of a self-powered CsCu2I3 thin film ultraviolet photodetector, realizes high-performance and high-sensitivity detection of ultraviolet light, and simultaneously considers device stability and safety. Through a two-step annealing process, the application regulates and controls the grain size and crystallinity of the CsCu2I3 thin film, and prepares the CsCu2I3 perovskite thin film which is uniform in thickness, uniform in particle size, good in crystallinity and free of holes. The prepared CsCu2I3 perovskite thin film is used as a light response active layer to construct an ultraviolet photodetector with a vertical structure and a self-driving function. The ultraviolet photodetector prepared based on perovskite solution processing has the advantages of high detection rate, large on-off ratio and fast response speed, and can realize high-performance ultraviolet detection.

Description

Technical Field

[0001] The present invention belongs to the technical field of preparation of lead-free copper-based perovskite photoelectric materials, and in particular to a method for preparing a CsCu2I3 thin film ultraviolet photodetector applicable to the fields of ultraviolet detection and ultraviolet sensing. Background Art

[0002] While conventional lead halide perovskite materials have attracted considerable attention for their excellent optoelectronic properties, including high optical absorption coefficients, tunable emission wavelengths, direct band gaps, and high and balanced carrier transport, their instability and the presence of lead have limited their further application. The lead-free perovskite CsCu2I3 material possesses a one-dimensional crystal structure and soft lattice, which promotes the formation of self-trapped excitons and exhibits a large Stokes shift. Its photoluminescence quantum yield is as high as 12.3%, and it is highly stable. Furthermore, CsCu2I3 has a large direct band gap and strong absorption of ultraviolet light, making it a potential material for the preparation of ultraviolet detectors.

[0003] CsCu2I3 has a direct band gap of up to 3.62eV, so when used as a photoactive material for UV photodetectors, it can greatly improve the performance of the device and has a very high responsivity and response speed in the UV / deep UV band. CsCu2I3 is also a very stable material. + Package [Cu4I6] 2- This protects it from corrosion by water and oxygen, preventing phase changes and decomposition even under long-term outdoor exposure. Furthermore, the high carrier transport rate significantly enhances the photodetection performance of CsCu2I3. Furthermore, the CsCu2I3 material is safe and non-toxic, meeting the needs of green development and providing a viable solution for the design and fabrication of highly sensitive, stable, fast-response, safe, and non-toxic self-powered UV photodetectors.

[0004] Li et al. (Adv. Funct. Mater., 2020, 30, 2002634) prepared a CsCu2I3 single crystal photodetector. Due to the highly one-dimensional electronic structure of the CsCu2I3 single crystal, the photodetector exhibits significant anisotropy in detection performance, with a maximum responsivity of 52.0 mAW. -1 , the detection rate can reach 9.3×10 10 Jones. Yang et al. (JPhysChem Lett. 2020, 11, 6880-6886) constructed a CsCu2I3 thin film deep ultraviolet photodetector that exhibited excellent responsivity under 265nm illumination, with an on / off ratio of up to 22, a detectivity and an EQE of 1.2×10 11Jones and 10.3%. Shi Zhifeng et al. (Chinese Patent: CN202010209651) proposed using the one-dimensional electronic structure of CsCu2I3 single crystals to develop micrometer-scale lines for polarization detection. However, there is currently no report on the preparation of high-quality CsCu2I3 thin films using a solution-based method and a two-step annealing process, and the development of self-powered UV detectors based on this process. Summary of the Invention

[0005] The purpose of the present invention is to provide a method for preparing a self-powered CsCu2I3 thin film ultraviolet photodetector.

[0006] The technical solution to achieve the objectives of the present invention is a method for preparing a self-powered CsCu2I3 thin-film UV photodetector. This method utilizes a combination of solution spin coating and two-step annealing, and by regulating the annealing temperature and time, a single-phase structure, good crystallinity, and uniform morphology of the CsCu2I3 thin film is obtained. On this basis, a self-powered UV photodetector is developed by stacking the layers. The method specifically includes the following steps:

[0007] Step 1: ultrasonically clean the ITO glass with deionized water, isopropyl alcohol, and acetone, respectively, and then dry and irradiate with ultraviolet light;

[0008] Step 2: Spin-coat Ni(CH3COO)2 on the ITO glass surface and anneal to obtain NiO x hole transport layer;

[0009] Step 3, adding CsI and CuI into a reaction vessel, and then adding a solvent to fully dissolve them to form a CsCu2I3 precursor;

[0010] Step 4, in NiO x A CsCu2I3 precursor was added to the surface of the hole transport layer and a uniform film was formed by spin coating. An anti-solvent was added during the film formation process, and then a two-step annealing was performed to obtain a CsCu2I3 film with high crystalline quality.

[0011] Step 5, adding PCBM solution to the surface of the CsCu2I3 film and spin coating to obtain a PCBM electron transport layer;

[0012] Step 6: Place a mask on the surface of the PCBM electron transport layer, and evaporate a silver electrode on the PCBM surface by evaporation to obtain a self-powered CsCu2I3 thin film ultraviolet photodetector.

[0013] Compared with the prior art, the present invention has the following significant advantages:

[0014] 1) The CsCu2I3 thin film obtained by the two-step annealing process of the present invention has the advantages of being free of holes, having uniform grain size, and having a single and stable phase composition.

[0015] 2) The self-powered photodetector developed based on CsCu2I3 thin film has the advantages of high responsiveness, fast response speed and high stability.

[0016] 3) The obtained CsCu2I3 photodetector is stable, safe and environmentally friendly.

[0017] The present invention is further described in detail below with reference to the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Figure 1 This is the SEM image of the CsCu2I3 thin film prepared in Example 1 of the present invention.

[0019] Figure 2 This is the XRD pattern of the CsCu2I3 thin film prepared in Example 1 of the present invention.

[0020] Figure 3 This is the EQE diagram of the CsCu2I3 photodetector prepared in Example 1 of the present invention.

[0021] Figure 4 This is the stability It diagram of the CsCu2I3 photodetector prepared in Example 1 of the present invention.

[0022] Figure 5 This is a response speed diagram of the CsCu2I3 photodetector prepared in Example 1 of the present invention.

[0023] Figure 6 This is a diagram of the detectivity of the CsCu2I3 photodetector, a product prepared in Example 1 of the present invention.

[0024] Figure 7 This is a bright and dark current diagram of the CsCu2I3 photodetector, a product prepared in Example 1 of the present invention.

[0025] Figure 8 This is the SEM image of the CsCu2I3 thin film prepared in Example 2 of the present invention.

[0026] Figure 9 This is the XRD pattern of the CsCu2I3 thin film prepared in Example 2 of the present invention.

[0027] Figure 10 This is the EQE diagram of the CsCu2I3 photodetector prepared in Example 2 of the present invention.

[0028] Figure 11 This is the SEM image of the CsCu2I3 thin film prepared in Example 3 of the present invention.

[0029] Figure 12This is the EQE diagram of the CsCu2I3 photodetector prepared in Example 3 of the present invention.

[0030] Figure 13 This is the SEM image of the CsCu2I3 thin film prepared in Example 4 of the present invention.

[0031] Figure 14 This is the EQE diagram of the CsCu2I3 photodetector prepared in Example 4 of the present invention.

[0032] Figure 15 This is the SEM image of the CsCu2I3 thin film prepared in Example 5 of the present invention.

[0033] Figure 16 This is the EQE diagram of the CsCu2I3 photodetector prepared in Example 5 of the present invention.

[0034] Figure 17 Schematic diagram of the CsCu2I3 photodetector of the present invention, from bottom to top are 1-ITO conductive glass, 2-NiO x Hole transport layer, 3-CsCu2I3 film, 4-PCBM electron transport layer, 5-Ag electrode. DETAILED DESCRIPTION

[0035] In order to make the purpose, technical solutions and advantages of this application more clear, the following further describes this application in detail with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain this application and are not intended to limit this application.

[0036] The present invention proposes a method for preparing a self-powered CsCu2I3 thin film ultraviolet photodetector, which uses a solution spin coating and two-step annealing method to obtain CsCu2I3 thin films with different morphologies by controlling the annealing temperature and time, and the anti-solvent addition time, and on this basis, a vertical structure photodetector is constructed. Figure 17 The specific steps include:

[0037] Step 1: Clean and dry the ITO glass. Clean the ITO glass with clean water, deionized water, acetone, isopropyl alcohol, and acetone in this order for 15 minutes. Use a nitrogen gun to blow dry the water stains on the surface, and then irradiate the ITO glass with ultraviolet light for 20 minutes.

[0038] Step 2: Dissolve 100 mg of Ni(CH3COO)2 in 4 ml of ethanol and add 24 μL of ethanolamine. After fully dissolved, drop 30 μL of Ni(CH3COO)2 solution on the ITO glass surface. Set the spin coating speed to 3200 rpm. Place the ITO glass with spin-coated Ni(CH3COO)2 in a muffle furnace and anneal for 1 hour. Set the annealing temperature to 400 ° C to obtain NiOx Hole transport layer.

[0039] Step 3: Mix 0.1299 g of CsI and 0.095 g of CuI, add 0.5 mL of a mixed solution of DMF and DMSO with a volume ratio of 4:1, and fully dissolve them at 60° C. to obtain the desired CsCu2I3 precursor.

[0040] Step 4, take out the ITO glass and place it on the NiO x The hole transport layer surface was spin-coated with a CsCu2I3 precursor at 5000 rpm, and toluene was added as an anti-solvent at appropriate times. The ITO glass was then annealed.

[0041] Step 5: After annealing, 30 μL of a 20 mg / mL PCBM solution dissolved in chlorobenzene was added dropwise to the surface of the CsCu2I3 film, and the spin coating speed was set to 2000 rpm.

[0042] Step 6: Cover the surface of the PCBM with a mask and evaporate a 100 nm thick silver electrode on the surface using an evaporation machine.

[0043] The present invention adopts a two-step annealing method to obtain a CsCu2I3 thin film with a single phase structure, good crystallinity and uniform morphology. The self-powered photodetector developed based on the thin film has the advantages of high responsiveness, fast response speed and high stability.

[0044] The present invention will be described in further detail below with reference to specific embodiments.

[0045] Example 1

[0046] By combining solution spin coating and two-step annealing, CsCu2I3 thin films with different morphologies were obtained by controlling the annealing temperature and time, as well as the antisolvent addition time. Based on this, vertically structured photodetectors were constructed. The specific steps are as follows:

[0047] Step 1: Clean and dry the ITO glass. Clean the ITO glass with clean water, deionized water, acetone, isopropyl alcohol, and acetone in this order for 15 minutes. Use a nitrogen gun to blow dry the water stains on the surface, and then irradiate the ITO glass with ultraviolet light for 20 minutes.

[0048] Step 2: Dissolve 100 mg of Ni(CH3COO)2 in 4 ml of ethanol and add 24 μL of ethanolamine. Once fully dissolved, drop 30 μL of the Ni(CH3COO)2 solution onto the ITO glass surface at a spin-coating speed of 3200 rpm. Anneal the Ni(CH3COO)2-coated ITO glass in a muffle furnace for 1 hour at 400°C.

[0049] Step 3: Mix 0.1299 g of CsI and 0.095 g of CuI, add 0.5 mL of a mixed solution of DMF and DMSO with a volume ratio of 4:1, and fully dissolve them at 60° C. to obtain the desired CsCu2I3 precursor.

[0050] Step 4, take out the ITO glass and place it on the NiO x The hole transport layer was spin-coated with a CsCu2I3 precursor at 5000 rpm, and toluene was added as an antisolvent after 8 seconds. The CsCu2I3 was then annealed at 60°C for 1 minute and then at 100°C for 15 minutes to obtain a high-quality CsCu2I3 film.

[0051] Step 5: After annealing, 30 μL of a 20 mg / mL PCBM solution dissolved in chlorobenzene was added dropwise to the surface of the CsCu2I3 film, and the spin coating speed was set to 2000 rpm.

[0052] Step 6: Cover the PCBM surface with a mask and evaporate a 100 nm thick silver electrode on the surface using an evaporation machine;

[0053] The prepared products were characterized and analyzed. Figure 1 、 Figure 2 、 Figure 3 The results show that according to the process parameters of Example 1, a film without holes and with uniform morphology and size within the field of view can be obtained, and XRD shows that the film has high crystallinity. Figure 4 、 Figure 5 、 Figure 6 Figure 7 Characterization of the constructed detector revealed a relatively high EQE (greater than 12%) and a response speed of approximately 1ms, demonstrating a fast detector response. Furthermore, after two months of unpackaged storage, the It curve showed a slight decrease, indicating good stability and high detectivity, further demonstrating the detector's excellent performance. The light and dark currents confirmed that the detector can be self-driven under zero bias conditions.

[0054] Example 2

[0055] By combining solution spin coating and two-step annealing, CsCu2I3 films with different morphologies were obtained by controlling the annealing temperature and time, as well as the antisolvent addition time. Based on this, vertically structured photodetectors were constructed. The specific steps are as follows:

[0056] Step 1: Clean and dry the ITO glass. Clean the ITO glass with clean water, deionized water, acetone, isopropyl alcohol, and acetone in this order for 15 minutes. Use a nitrogen gun to blow dry the water stains on the surface, and then irradiate the ITO glass with ultraviolet light for 20 minutes.

[0057] Step 2: Dissolve 100 mg of Ni(CH3COO)2 in 4 ml of ethanol and add 24 μL of ethanolamine. Once fully dissolved, drop 30 μL of the Ni(CH3COO)2 solution onto the ITO glass surface at a spin-coating speed of 3200 rpm. Anneal the Ni(CH3COO)2-coated ITO glass in a muffle furnace for 1 hour at 400°C.

[0058] Step 3: Mix 0.1299 g of CsI and 0.095 g of CuI, add 0.5 mL of a mixed solution of DMF and DMSO with a volume ratio of 4:1, and fully dissolve them at 60° C. to obtain the desired CsCu2I3 precursor.

[0059] Step 4, take out the ITO glass and place it on the NiO x The hole transport layer was spin-coated with a CsCu2I3 precursor at 5000 rpm, and toluene was added as an antisolvent after 6 seconds. The CsCu2I3 was then annealed at 80°C for 1 minute and then at 100°C for 15 minutes to obtain a high-quality CsCu2I3 film.

[0060] Step 5: After annealing, 30 μL of a 20 mg / mL PCBM solution dissolved in chlorobenzene was added dropwise to the surface of the CsCu2I3 film, and the spin coating speed was set to 2000 rpm.

[0061] Step 6: Cover the PCBM surface with a mask and evaporate a 100 nm thick silver electrode on the surface using an evaporation machine;

[0062] The prepared products were characterized and analyzed. Figure 8 、 Figure 9 、 Figure 10 The results show that according to the process parameters of Example 2, a film with no holes, uniform morphology within the field of view, and different grain sizes can be obtained. XRD shows that the film has high crystallinity and the detector EQE value is 11%.

[0063] Example 3

[0064] By combining solution spin coating and two-step annealing, CsCu2I3 films with different morphologies were obtained by controlling the annealing temperature and time, as well as the antisolvent addition time. Based on this, vertically structured photodetectors were constructed. The specific steps are as follows:

[0065] Step 1: Clean and dry the ITO glass. Clean the ITO glass with clean water, deionized water, acetone, isopropyl alcohol, and acetone in this order for 15 minutes. Use a nitrogen gun to blow dry the water stains on the surface, and then irradiate the ITO glass with ultraviolet light for 20 minutes.

[0066] Step 2: Dissolve 100 mg of Ni(CH3COO)2 in 4 ml of ethanol and add 24 μL of ethanolamine. Once fully dissolved, drop 30 μL of the Ni(CH3COO)2 solution onto the ITO glass surface at a spin-coating speed of 3200 rpm. Anneal the Ni(CH3COO)2-coated ITO glass in a muffle furnace for 1 hour at 400°C.

[0067] Step 3: Mix 0.1299 g of CsI and 0.095 g of CuI, add 0.5 mL of a mixed solution of DMF and DMSO with a volume ratio of 4:1, and fully dissolve them at 60° C. to obtain the desired CsCu2I3 precursor.

[0068] Step 4, take out the ITO glass and place it on the NiO x The hole transport layer was spin-coated with a CsCu2I3 precursor at 5000 rpm, and toluene was added as an antisolvent after 10 seconds. The CsCu2I3 was then annealed at 80°C for 1 minute and then at 120°C for 15 minutes to obtain a high-quality CsCu2I3 film.

[0069] Step 5: After annealing, 30 μL of a 20 mg / mL PCBM solution dissolved in chlorobenzene was added dropwise to the surface of the CsCu2I3 film, and the spin coating speed was set to 2000 rpm.

[0070] Step 6: Cover the PCBM surface with a mask and evaporate a 100 nm thick silver electrode on the surface using an evaporation machine;

[0071] The prepared products were characterized and analyzed. Figure 11 、 Figure 12 The results show that according to the process parameters of Example 3, a thin film with no holes, uniform morphology and different grain sizes can be obtained within the field of view, and the detector EQE value is 6.48%.

[0072] Example 4

[0073] By combining solution spin coating and two-step annealing, CsCu2I3 films with different morphologies were obtained by controlling the annealing temperature and time, as well as the antisolvent addition time. Based on this, vertically structured photodetectors were constructed. The specific steps are as follows:

[0074] Step 1: Clean and dry the ITO glass. Clean the ITO glass with clean water, deionized water, acetone, isopropyl alcohol, and acetone in this order for 15 minutes. Use a nitrogen gun to blow dry the water stains on the surface, and then irradiate the ITO glass with ultraviolet light for 20 minutes.

[0075] Step 2: Dissolve 100 mg of Ni(CH3COO)2 in 4 ml of ethanol and add 24 μL of ethanolamine. Once fully dissolved, drop 30 μL of the Ni(CH3COO)2 solution onto the ITO glass surface at a spin-coating speed of 3200 rpm. Anneal the Ni(CH3COO)2-coated ITO glass in a muffle furnace for 1 hour at 400°C.

[0076] Step 3: Mix 0.1299 g of CsI and 0.095 g of CuI, add 0.5 mL of a mixed solution of DMF and DMSO with a volume ratio of 4:1, and fully dissolve them at 60° C. to obtain the desired CsCu2I3 precursor.

[0077] Step 4, take out the ITO glass and place it on the NiO x The hole transport layer was spin-coated with a CsCu2I3 precursor at 5000 rpm, and toluene was added as an antisolvent at the 12th second mark. The CsCu2I3 was then annealed at 60°C for 5 minutes and then at 100°C for 15 minutes to obtain a high-quality CsCu2I3 film.

[0078] Step 5: After annealing, 30 μL of a 20 mg / mL PCBM solution dissolved in chlorobenzene was added dropwise to the surface of the CsCu2I3 film, and the spin coating speed was set to 2000 rpm.

[0079] Step 6: Cover the PCBM surface with a mask and evaporate a 100 nm thick silver electrode on the surface using an evaporation machine;

[0080] The prepared products were characterized and analyzed. Figure 13 、 Figure 14 The results show that according to the process parameters of Example 4, a thin film with pores and relatively uniform morphology and size within the field of view can be obtained, and the detector EQE value is 5.75%.

[0081] Example 5

[0082] By combining solution spin coating and two-step annealing, CsCu2I3 films with different morphologies were obtained by controlling the annealing temperature and time, as well as the antisolvent addition time. Based on this, vertically structured photodetectors were constructed. The specific steps are as follows:

[0083] Step 1: Clean and dry the ITO glass. Clean the ITO glass with clean water, deionized water, acetone, isopropyl alcohol, and acetone in this order for 15 minutes. Use a nitrogen gun to blow dry the water stains on the surface. Then, irradiate the ITO glass with ultraviolet light for 20 minutes.

[0084] Step 2: Dissolve 100 mg of Ni(CH3COO)2 in 4 ml of ethanol and add 24 μL of ethanolamine. Once fully dissolved, drop 30 μL of the Ni(CH3COO)2 solution onto the ITO glass surface at a spin-coating speed of 3200 rpm. Anneal the Ni(CH3COO)2-coated ITO glass in a muffle furnace for 1 hour at 400°C.

[0085] Step 3: Mix 0.1299 g of CsI and 0.095 g of CuI, add 0.5 mL of a mixed solution of DMF and DMSO with a volume ratio of 4:1, and fully dissolve them at 60° C. to obtain the desired CsCu2I3 precursor.

[0086] Step 4, take out the ITO glass and place it on the NiO x The hole transport layer was spin-coated with a CsCu2I3 precursor at 5000 rpm, and toluene was added as an antisolvent at the 8th second mark. The CsCu2I3 was then annealed at 60°C for 1 minute and then at 80°C for 15 minutes to obtain a high-quality CsCu2I3 film.

[0087] Step 5: After annealing, 30 μL of a 20 mg / mL PCBM solution dissolved in chlorobenzene was added dropwise to the surface of the CsCu2I3 film, and the spin coating speed was set to 2000 rpm.

[0088] Step 6: Cover the surface of the PCBM with a mask and evaporate a 100 nm thick silver electrode on the surface using an evaporation machine.

[0089] The prepared products were characterized and analyzed. Figure 15 、 Figure 16 The results show that according to the process parameters of Example 5, a thin film with pores and uniform morphology and size within the field of view can be obtained, and the detector EQE value is 4.15%.

[0090] The ultraviolet photodetector prepared by the present invention based on the processing of perovskite solution has the advantages of high detection rate, large switching ratio and fast response speed, and can achieve high-performance ultraviolet detection.

[0091] The above shows and describes the basic principles, main features and advantages of the present invention. Those skilled in the art should understand that the present invention is not limited to the above embodiments. The above embodiments and descriptions are only illustrative of the principles of the present invention. Without departing from the spirit and scope of the present invention, any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention shall be included in the scope of protection of the present invention.

Claims

1. A method for preparing a self-powered CsCu2I3 thin film ultraviolet photodetector, characterized in that: The method comprises the following steps: Step 1: ultrasonically clean the ITO glass with deionized water, isopropyl alcohol, and acetone, respectively, and then dry and irradiate with ultraviolet light; Step 2: Spin-coat Ni(CH3COO)2 on the ITO glass surface and anneal to obtain NiO x hole transport layer; Step 3, adding CsI and CuI into a reaction vessel, and then adding a solvent to fully dissolve them to form a CsCu2I3 precursor; Step 4, in NiO x A CsCu2I3 precursor was added to the surface of the hole transport layer and a uniform film was formed by spin coating. An anti-solvent was added during the film formation process, and then a two-step annealing was performed to obtain a CsCu2I3 film with high crystalline quality. Step 5, adding PCBM solution to the surface of the CsCu2I3 film and spin coating to obtain a PCBM electron transport layer; Step 6: placing a mask on the surface of the PCBM electron transport layer, and evaporating a silver electrode on the PCBM surface by evaporation to obtain a self-powered CsCu2I3 thin film ultraviolet photodetector; In step 4, the amount of CsCu2I3 precursor used is 35 μL, the spin coating speed is 5000 rpm, and the spin coating time is 35 s; the antisolvent addition time is from 6 seconds to 12 seconds, and annealing is performed at an annealing temperature of 60°C to 80°C for 1 minute, and then annealing is performed at an annealing temperature of 100°C to 120°C for 15 minutes.

2. The method for preparing the self-powered CsCu2I3 thin film ultraviolet photodetector according to claim 1, characterized in that: Step 1 specifically includes: washing the ITO glass with deionized water, acetone, isopropyl alcohol, and acetone in sequence for 15 minutes, and then irradiating the ITO glass with ultraviolet light for 20 minutes after drying.

3. The method for preparing the self-powered CsCu2I3 thin film ultraviolet photodetector according to claim 1, characterized in that: Step 2 is as follows: 100 mg Ni(CH3COO)2 and 24 μL ethanolamine are dissolved in 4 mL ethanol to prepare Ni(CH3COO)2 solution, the amount of Ni(CH3COO)2 solution used is 35 μL, the spin coating speed is 3200 rpm, the spin coating time is 35 s, and annealing is performed at 400°C for 1 hour.

4. The method for preparing the self-powered CsCu2I3 thin film ultraviolet photodetector according to claim 1, characterized in that: In step 3, the stoichiometric ratio of CsI to CuI is 1:2, the solvent is DMF and DMSO, the volume ratio is 4:1, and the solution is dissolved at 60° C. for 1 hour to obtain a 1 M CsCu2I3 precursor solution.

5. The method for preparing the self-powered CsCu2I3 thin film ultraviolet photodetector according to claim 1, characterized in that: Step 5 is specifically as follows: dissolving the PCBM solution in chlorobenzene to prepare a 20 mg / mL PCBM solution, using 35 μL of the solution, and spinning at a speed of 2000 rpm for 35 s.

6. The method for preparing the self-powered CsCu2I3 thin film ultraviolet photodetector according to claim 1, characterized in that: The thickness of the silver electrode in step 6 is 100 nm.

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