High frequency module and communication device

Abstract

The first filter is a hybrid filter including an elastic wave filter (10), a plurality of first inductors (L11), (L12), (L13), and a plurality of first capacitors (C11), (C12), (C13), and (C14). The high-frequency module (100) further includes a metal electrode layer covering at least a portion of the resin layer and at least a portion of the outer peripheral surface (43) of the mounting substrate (4). At least one inductor (second inductor) among the plurality of inductors including the plurality of first inductors (L11), (L12), (L13) of the first filter (1) and the plurality of second inductors (L21), (L22) of the second filter (2) is a circuit element including a conductor pattern portion formed on the mounting substrate. The shortest distance between the outer peripheral surface of the mounting substrate and a signal terminal (third signal terminal) connected to the circuit element is longer than the shortest distance between the outer peripheral surface of the mounting substrate and the circuit element.

Description

Technical Field

[0001] The present invention generally relates to a high-frequency module and a communication device, and more particularly to a high-frequency module including a hybrid filter and a communication device including the high-frequency module. Background Art

[0002] Patent Document 1 discloses a multiplexer comprising a first filter coupled to a common node for filtering radio frequency signals, and a second filter coupled to the common node. The first filter comprises a hybrid elastic LC filter (hybrid filter) and a non-elastic LC filter connected in cascade to the hybrid elastic LC filter. The hybrid elastic LC filter comprises an elastic resonator die, a capacitor external to the elastic resonator die, and an inductor external to the elastic resonator die.

[0003] Patent Document 1: Japanese Patent Application Laid-Open No. 2020-14204

[0004] In a high-frequency module including a hybrid filter, when a metal electrode layer connected to a ground terminal is formed as a shield layer, for example, the characteristics of the hybrid filter may be degraded. Summary of the Invention

[0005] An object of the present invention is to provide a high-frequency module and a communication device capable of suppressing degradation of hybrid filter characteristics.

[0006] A high-frequency module according to one embodiment of the present invention includes a mounting substrate, a first signal terminal, a second signal terminal, a third signal terminal, a ground terminal, a first filter, and a second filter. The mounting substrate has a first principal surface and a second principal surface facing each other. The first signal terminal, the second signal terminal, the third signal terminal, and the ground terminal are arranged on the second principal surface of the mounting substrate. The first filter is connected between the first and second signal terminals. The first filter is a hybrid filter comprising an elastic wave filter, a plurality of first inductors, and a plurality of first capacitors. The elastic wave filter includes at least one elastic wave resonator. The second filter is connected between the first and third signal terminals. The second filter includes a plurality of second inductors and a plurality of second capacitors. The passband width of the hybrid filter is greater than the passband width of the elastic wave resonator. The elastic wave filter is mounted on the first principal surface of the mounting substrate. The plurality of first inductors, the plurality of first capacitors, the plurality of second inductors, and the plurality of second capacitors are arranged on the mounting substrate. The high-frequency module further includes a resin layer and a metal electrode layer. The resin layer is disposed on the first main surface of the mounting substrate and covers at least a portion of the elastic wave filter. The metal electrode layer covers at least a portion of the resin layer and at least a portion of the outer peripheral surface of the mounting substrate. The metal electrode layer is connected to the ground terminal. At least one of the plurality of inductors, including the plurality of first inductors and the plurality of second inductors, is a circuit component including a conductor pattern portion formed on the mounting substrate. The shortest distance between the outer peripheral surface of the mounting substrate and one of the second and third signal terminals connected to the circuit component is shorter than the shortest distance between the outer peripheral surface of the mounting substrate and the circuit component.

[0007] A communication device according to one embodiment of the present invention includes the high-frequency module and a signal processing circuit. The signal processing circuit is connected to the high-frequency module.

[0008] The high-frequency module and communication device according to the above-described aspect of the present invention can suppress degradation in the characteristics of the hybrid filter. BRIEF DESCRIPTION OF THE DRAWINGS

[0009] Figure 1 This is a circuit diagram of the high-frequency module according to the first embodiment.

[0010] Figure 2 This is a top view of the high-frequency module shown above.

[0011] Figure 3 This is a bottom view of the high-frequency module as above.

[0012] Figure 4This is a top view of the mounting substrate in the same high-frequency module.

[0013] Figure 5 This is another top view of the mounting substrate in the same high-frequency module.

[0014] Figure 6 The same high-frequency module as above is Figure 2 X1-X1 line cross-sectional view.

[0015] Figure 7 The same high-frequency module as above is Figure 2 Y1-Y1 line sectional view.

[0016] Figure 8 This is a perspective view showing the inside of the mounting substrate in the high-frequency module shown above.

[0017] Figure 9 A is a cross-sectional view of a conductive pattern portion closest to the first main surface of the mounting substrate, included in a circuit element disposed within the mounting substrate, in the high-frequency module described above. Figure 9 B is a cross-sectional view of the conductive pattern portion second closest to the first main surface of the mounting substrate, included in the circuit element disposed in the mounting substrate, in the high-frequency module described above. Figure 9 C is a cross-sectional view of the conductive pattern portion located third closest to the first main surface of the mounting substrate, among the circuit elements disposed in the mounting substrate, in the high-frequency module described above. Figure 9 D is a cross-sectional view of a conductive pattern portion located fourth closest to the first main surface of the mounting substrate, among the circuit elements disposed in the mounting substrate, in the high-frequency module described above. Figure 9 E is a cross-sectional view of the high-frequency module as above, including a first signal terminal, a second signal terminal, a third signal terminal, and a fourth signal terminal on a mounting substrate.

[0018] Figure 10 This is a cross-sectional view of an electronic component including a first elastic wave filter and a second elastic wave filter in the high-frequency module described above.

[0019] Figure 11 This is a circuit diagram of a communication device equipped with the same high-frequency module.

[0020] Figure 12 1 is a Smith chart showing the frequency characteristics of the impedance of the second filter of the high-frequency module and the comparative example.

[0021] Figure 13 1 is a frequency characteristic diagram of the insertion loss of the second filter of the high-frequency module and the comparative example.

[0022] Figure 14 This is a plan view of a high-frequency module according to the second embodiment.

[0023] Figure 15 This is a perspective view of the mounting substrate and circuit components in the same high-frequency module.

[0024] Figure 16 A is a cross-sectional view of a conductive pattern portion closest to the first main surface of the mounting substrate, included in a circuit element disposed within the mounting substrate, in the high-frequency module described above. Figure 16 B is a cross-sectional view of the conductive pattern portion second closest to the first main surface of the mounting substrate, included in the circuit element disposed in the mounting substrate, in the high-frequency module described above. Figure 16 C is a cross-sectional view of the conductive pattern portion located third closest to the first main surface of the mounting substrate, among the circuit elements disposed in the mounting substrate, in the high-frequency module described above. Figure 16 D is a cross-sectional view of a conductive pattern portion located fourth closest to the first main surface of the mounting substrate, among the circuit elements disposed in the mounting substrate, in the high-frequency module described above. Figure 16 E is a cross-sectional view of the high-frequency module as above, including the first signal terminal, the second signal terminal, the third signal terminal, and the fourth signal terminal on the mounting substrate.

[0025] Figure 17 This is a plan view of a high-frequency module according to a third embodiment.

[0026] Figure 18 This is a top view of the high-frequency module shown above.

[0027] Figure 19 The same high-frequency module as above is Figure 17 X1-X1 line cross-sectional view.

[0028] Figure 20 The same high-frequency module as above is Figure 17 Y2-Y2 line sectional view. DETAILED DESCRIPTION

[0029] Each of the drawings referred to in the following embodiments and the like is a schematic diagram, and the sizes and thickness ratios of the components in the drawings do not necessarily reflect the actual dimensional ratios.

[0030] (Implementation Method 1)

[0031] Below, refer to Figures 1 to 11 The high-frequency module 100 and the communication device 300 according to the first embodiment will be described.

[0032] (1) Summary

[0033] like Figure 1 As shown, the high-frequency module 100 of the first embodiment includes a first signal terminal 101, a second signal terminal 102, a third signal terminal 103, and a ground terminal 107 (see Figure 2), a first filter 1, and a second filter 2. The first filter 1 is connected between the first signal terminal 101 and the second signal terminal 102. The phrase "the first filter 1 is connected between the first signal terminal 101 and the second signal terminal 102" means that the first filter 1 is connected to both the first signal terminal 101 and the second signal terminal 102. The first filter 1 is a hybrid filter 1 that includes an elastic wave filter 10, a plurality of first inductors L11 to L13, and a plurality of first capacitors C11 to C14. The elastic wave filter 10 (hereinafter also referred to as the first elastic wave filter 10) includes at least one (for example, three) elastic wave resonator 14. The passband width of the hybrid filter 1 is greater than the passband width of the elastic wave resonator 14. The passband width of the elastic wave resonator 14 is the relative bandwidth of the elastic wave resonator 14, which is the difference between the antiresonance frequency and the resonant frequency of the elastic wave resonator 14. A "hybrid filter" is a filter that includes an elastic wave filter having at least one elastic wave resonator, at least one capacitor, and at least one inductor, and has a passband width wider than the passband width of the at least one elastic wave resonator. The second filter 2 is connected between the first signal terminal 101 and the third signal terminal 103. "The second filter 2 is connected between the first signal terminal 101 and the third signal terminal 103" means that the second filter 2 is connected to both the first signal terminal 101 and the third signal terminal 103. The second filter 2 includes a plurality of second inductors L21 and L22 and a plurality of second capacitors C21 to C23.

[0034] In addition, if Figures 2 to 6 As shown, the high frequency module 100 includes a mounting substrate 4. Figure 6 and Figure 7 As shown, the mounting substrate 4 has a first main surface 41 and a second main surface 42 facing each other. Here, the so-called "facing" does not mean physically facing, but refers to geometrically facing. Figure 3 As shown, the first signal terminal 101, the second signal terminal 102, the third signal terminal 103 and the ground terminal 107 are arranged on the second main surface 42 of the mounting substrate 4. Figure 2 As shown, the first elastic wave filter 10 is mounted on the first main surface 41 of the mounting substrate 4. A plurality of first inductors L11, L12, L13, a plurality of first capacitors C11, C12, C13, C14, a plurality of second inductors L21, L22, and a plurality of second capacitors C21, C22, C23 are arranged on the mounting substrate 4. Figure 6 and Figure 7As shown, the high-frequency module 100 further includes a resin layer 5 and a metal electrode layer 6. The resin layer 5 is arranged on the first main surface 41 of the mounting substrate 4. The resin layer 5 covers at least a portion of the elastic wave filter 10. The metal electrode layer 6 covers at least a portion of the resin layer 5 and at least a portion of the outer peripheral surface 43 of the mounting substrate 4. Although not shown in the figure, the metal electrode layer 6 is connected to the ground terminal 107. At least one inductor (in the plurality of inductors including the plurality of first inductors L11, L12, L13 and the plurality of second inductors L21, L22) Figure 6 In the example, the second inductor L22 is a circuit element (for example, an inner layer inductor) including a conductor pattern portion 48 formed on the mounting substrate 4. Figures 2 to 5 In the figure, the resin layer 5 and the metal electrode layer 6 are omitted.

[0035] like Figure 1 As shown, high-frequency module 100 further includes a fourth signal terminal 104 and a third filter 3. The third filter 3 is connected between the first signal terminal 101 and the fourth signal terminal 104. "The third filter 3 is connected between the first signal terminal 101 and the fourth signal terminal 104" means that the third filter 3 is connected to both the first signal terminal 101 and the fourth signal terminal 104. The third filter 3 includes a second elastic wave filter 30 and a third inductor L30. The second elastic wave filter 30 is connected between the first signal terminal 101 and the fourth signal terminal 104.

[0036] like Figure 2 As shown, the second elastic wave filter 30 is mounted on the first main surface 41 of the mounting substrate 4. The fourth signal terminal 104 is arranged on the second main surface 42 of the mounting substrate 4. The third inductor L30 (see Figure 1 ) is connected to the ground electrode 37 of the second elastic wave filter 30 (see Figure 1 ) and the inductance component of the wiring of the ground terminal 107 of the mounting substrate 4.

[0037] The high-frequency module 100 comprises a multiplexer 110 (see FIG. 1 ) including a first filter 1 (hybrid filter 1 ), a second filter 2 , and a third filter 3 . Figure 11 ).

[0038] Based on Figure 11 After describing the circuit configurations of the high-frequency circuit 200 and the communication device 300 included in the high-frequency module 100 , the high-frequency module 100 according to the first embodiment will be described in more detail.

[0039] (2) High-frequency circuit and communication device equipped with a high-frequency module

[0040] (2.1) Circuit Structure of High-Frequency Circuit and Communication Device Equipped with High-Frequency Module

[0041] The high-frequency circuit 200 including the high-frequency module 100 is used in, for example, a communication device 300. The communication device 300 is, for example, a mobile phone (e.g., a smartphone), but is not limited thereto and may also be, for example, a wearable terminal (e.g., a smartwatch). The high-frequency circuit 200 is, for example, a module that supports the 4G (fourth generation mobile communication) standard, the 5G (fifth generation mobile communication) standard, and the like. An example of the 4G standard is the 3GPP (Third Generation Partnership Project) LTE (Long Term Evolution) standard. An example of the 5G standard is 5G NR (New Radio). The high-frequency circuit 200 is, for example, a front-end circuit that supports carrier aggregation and dual connectivity.

[0042] High-frequency circuit 200 is configured, for example, to amplify a transmission signal input from signal processing circuit 301 and output the amplified signal to antenna 309. Furthermore, high-frequency circuit 200 is configured to amplify a received signal input from antenna 309 and output the amplified signal to signal processing circuit 301. Signal processing circuit 301 is not a component of high-frequency circuit 200, but rather a component of communication device 300 that includes high-frequency circuit 200. High-frequency circuit 200 is controlled, for example, by signal processing circuit 301 included in communication device 300. Communication device 300 includes high-frequency circuit 200 and signal processing circuit 301. Communication device 300 also includes antenna 309. Communication device 300 also includes a circuit substrate on which high-frequency module 100 is mounted. The circuit substrate is, for example, a printed wiring board. The circuit substrate has a ground electrode that provides a ground potential.

[0043] The signal processing circuit 301 includes, for example, an RF signal processing circuit 302 and a baseband signal processing circuit 303. The RF signal processing circuit 302 is, for example, an RFIC (Radio Frequency Integrated Circuit) and performs signal processing on high-frequency signals. The RF signal processing circuit 302 performs signal processing such as up-conversion on the high-frequency signal (transmit signal) output from the baseband signal processing circuit 303 and outputs the processed high-frequency signal. Furthermore, the RF signal processing circuit 302 performs signal processing such as down-conversion on the high-frequency signal (receive signal) output from the high-frequency circuit 200 and outputs the processed high-frequency signal to the baseband signal processing circuit 303. The baseband signal processing circuit 303 is, for example, a BBIC (Baseband Integrated Circuit). The baseband signal processing circuit 303 generates an I-phase signal and a Q-phase signal based on the baseband signal. The baseband signal may be, for example, an externally input audio signal or image signal. The baseband signal processing circuit 303 combines the I-phase and Q-phase signals to perform IQ modulation processing and output the transmit signal. In this case, the transmit signal is generated as a modulated signal (IQ signal) obtained by amplitude modulating a carrier signal of a predetermined frequency with a period longer than the period of the carrier signal. The received signal processed by baseband signal processing circuit 303 is used, for example, as an image signal for image display or as an audio signal for a user of communication device 300 to communicate. High-frequency circuit 200 transmits the high-frequency signal (received signal, transmit signal) between antenna 309 and RF signal processing circuit 302 of signal processing circuit 301.

[0044] The high-frequency circuit 200 includes a multiplexer 110, a plurality of (e.g., three) transmit filters (a first transmit filter 111, a second transmit filter 112, and a third transmit filter 113), and a plurality of (e.g., three) receive filters (a first receive filter 121, a second receive filter 122, and a third receive filter 123). Furthermore, the high-frequency circuit 200 includes a first switch 7, a second switch 8, and a third switch 9. Furthermore, the high-frequency circuit 200 includes a plurality of (e.g., three) power amplifiers (a first power amplifier 171, a second power amplifier 172, and a third power amplifier 173), and a plurality of (e.g., three) low-noise amplifiers (a first low-noise amplifier 161, a second low-noise amplifier 162, and a third low-noise amplifier 163). In addition, the high-frequency circuit 200 includes multiple (for example, three) output matching circuits (first output matching circuit 131, second output matching circuit 132, third output matching circuit 133) and multiple (for example, three) input matching circuits (first input matching circuit 141, second input matching circuit 142, third input matching circuit 143).

[0045] The high-frequency circuit 200 also includes multiple external connection terminals. These include an antenna terminal T0, a first signal input terminal T11, a second signal input terminal T12, a third signal input terminal T13, a first signal output terminal T21, a second signal output terminal T22, a third signal output terminal T23, and multiple external ground terminals. These multiple external ground terminals are terminals that are electrically connected to the ground electrode of the circuit substrate included in the communication device 300 and are provided with a ground potential.

[0046] Hereinafter, the circuit structure of the high-frequency circuit 200 will be described in more detail.

[0047] The multiplexer 110 includes a first filter 1 (hybrid filter 1), a second filter 2, a third filter 3, a first signal terminal 101, a second signal terminal 102, a third signal terminal 103, and a fourth signal terminal 104 (see Figure 1 ). The first signal terminal 101 is a common terminal connected to the first filter 1, the second filter 2, and the third filter 3. It is connected to the second signal terminal 102 via the first filter 1, to the third signal terminal 103 via the second filter 2, and to the fourth signal terminal 104 via the third filter 3. The first signal terminal 101, the second signal terminal 102, the third signal terminal 103, and the fourth signal terminal 104 are input and output terminals for inputting and outputting high-frequency signals, respectively. In the high-frequency circuit 200, the first signal terminal 101 of the multiplexer 110 is connected to the antenna terminal T0. The antenna terminal T0 is connected to the antenna 309.

[0048] The first transmit filter 111 has a passband that includes the transmit band of the first communication frequency band. The second transmit filter 112 has a passband that includes the transmit band of the second communication frequency band. The third transmit filter 113 has a passband that includes the transmit band of the third communication frequency band. In the multiplexer 110, the first transmit filter 111 is a filter for the mid-band and high-band. The passband of the first transmit filter 111, for example, includes the frequency band of 1710 MHz to 2690 MHz. The second transmit filter 112 is a filter for the ultra-high frequency band. The passband of the second transmit filter 112, for example, includes the frequency band of 3300 MHz to 5000 MHz. The third transmit filter 113 is, for example, a filter for Wi-Fi (registered trademark) in the 2.4 GHz band. The transmit band of the third communication frequency band, for example, includes 2400 MHz to 2483 MHz. The first communication frequency band is, for example, Band 41 of the 3GPP LTE standard or Band 41 of the 5G NR standard. The second communication frequency band is, for example, Band 79 of the 5G NR standard. The first transmit filter 111 can be connected to the first filter 1 of the multiplexer 110 via the first switch 7. The second transmit filter 112 can be connected to the second filter 2 of the multiplexer 110 via the second switch 8. The third transmit filter 113 can be connected to the third filter 3 of the multiplexer 110 via the third switch 9.

[0049] The first receive filter 121 has a passband that includes a receive band of a fourth communication frequency band. The fourth communication frequency band is, for example, the same as the first communication frequency band. The second receive filter 122 has a passband that includes a receive band of a fifth communication frequency band. The fifth communication frequency band is, for example, the same as the second communication frequency band. The third receive filter 123 has a passband that includes a receive band of a sixth communication frequency band. The sixth communication frequency band is, for example, the same as the third communication frequency band. The first receive filter 121 can be connected to the first filter 1 of the multiplexer 110 via the first switch 7. The second receive filter 122 can be connected to the second filter 2 of the multiplexer 110 via the second switch 8. The third receive filter 123 can be connected to the third filter 3 of the multiplexer 110 via the third switch 9.

[0050] The first switch 7 has a common terminal 70 and a plurality of (for example, two) selection terminals 71 and 72. In the first switch 7, the common terminal 70 is connected to the first filter 1 of the multiplexer 110. More specifically, the common terminal 70 is connected to the second signal terminal 102 (see FIG. 1 ) of the high-frequency module 100 constituting the multiplexer 110. Figure 1) is connected, and is connected to the first filter 1 via the second signal terminal 102. In addition, in the first switch 7, the selection terminal 71 is connected to the first transmit filter 111, and the selection terminal 72 is connected to the first receive filter 121. The first switch 7 is controlled by the signal processing circuit 301, for example. In this case, the first switch 7 switches the connection state between the common terminal 70 and the multiple selection terminals 71, 72 according to the control signal of the RF signal processing circuit 302 from the signal processing circuit 301. The first switch 7 is, for example, a switch IC (Integrated Circuit). The first switch 7 is, for example, a switch that can connect at least one terminal of the multiple selection terminals 71, 72 to the common terminal 70. Here, the first switch 7 is, for example, a switch that can perform one-to-one and one-to-many connections.

[0051] The second switch 8 has a common terminal 80 and a plurality of (for example, two) selection terminals 81 and 82. In the second switch 8, the common terminal 80 is connected to the second filter 2 of the multiplexer 110. More specifically, the common terminal 80 is connected to the third signal terminal 103 (see FIG. 1 ) of the high-frequency module 100 constituting the multiplexer 110. Figure 1 ) is connected and is connected to the second filter 2 via the third signal terminal 103. In addition, in the second switch 8, the selection terminal 81 is connected to the second transmit filter 112, and the selection terminal 82 is connected to the second receive filter 122. The second switch 8 is controlled by the signal processing circuit 301, for example. In this case, the second switch 8 switches the connection state between the common terminal 80 and the multiple selection terminals 81 and 82 according to the control signal from the RF signal processing circuit 302 of the signal processing circuit 301. The second switch 8 is, for example, a switch IC. The second switch 8 is, for example, a switch capable of connecting at least one of the multiple selection terminals 81 and 82 to the common terminal 80. Here, the second switch 8 is, for example, a switch capable of performing one-to-one and one-to-many connections.

[0052] The third switch 9 has a common terminal 90 and a plurality of (for example, two) selection terminals 91 and 92. In the third switch 9, the common terminal 90 is connected to the third filter 3 of the multiplexer 110. More specifically, the common terminal 90 is connected to the fourth signal terminal 104 (see FIG. 1 ) of the high-frequency module 100 constituting the multiplexer 110. Figure 1) and is connected to the third filter 3 via the fourth signal terminal 104. Furthermore, in the third switch 9, the selection terminal 91 is connected to the third transmit filter 113, and the selection terminal 92 is connected to the third receive filter 123. The third switch 9 is controlled, for example, by the signal processing circuit 301. In this case, the third switch 9 switches the connection state between the common terminal 90 and the plurality of selection terminals 91 and 92 based on a control signal from the RF signal processing circuit 302 of the signal processing circuit 301. The third switch 9 is, for example, a switch IC. The third switch 9 is, for example, a switch capable of connecting at least one of the plurality of selection terminals 91 and 92 to the common terminal 90. Here, the third switch 9 is, for example, a switch capable of performing both one-to-one and one-to-many connections.

[0053] The first power amplifier 171 has an input terminal and an output terminal. The first power amplifier 171 amplifies the transmit signal input to the input terminal and outputs the signal from the output terminal. The input terminal of the first power amplifier 171 is connected to the first signal input terminal T11. The input terminal of the first power amplifier 171 is connected to the signal processing circuit 301 via the first signal input terminal T11. The output terminal of the first power amplifier 171 is connected to the first transmit filter 111 via the first output matching circuit 131. The first power amplifier 171 is a power amplifier capable of amplifying high-frequency signals within the passband of the first transmit filter 111. The first output matching circuit 131 is a circuit for achieving impedance matching between the first power amplifier 171 and the first transmit filter 111, and includes, for example, multiple inductors and multiple capacitors.

[0054] The second power amplifier 172 has an input terminal and an output terminal. The second power amplifier 172 amplifies the transmit signal input to the input terminal and outputs the signal from the output terminal. The input terminal of the second power amplifier 172 is connected to the second signal input terminal T12. The input terminal of the second power amplifier 172 is connected to the signal processing circuit 301 via the second signal input terminal T12. The output terminal of the second power amplifier 172 is connected to the second transmit filter 112 via the second output matching circuit 132. The second power amplifier 172 is a power amplifier capable of amplifying high-frequency signals within the passband of the second transmit filter 112. The second output matching circuit 132 is a circuit for achieving impedance matching between the second power amplifier 172 and the second transmit filter 112, and includes, for example, multiple inductors and multiple capacitors.

[0055] The third power amplifier 173 has an input terminal and an output terminal. The third power amplifier 173 amplifies the transmit signal input to the input terminal and outputs the signal from the output terminal. The input terminal of the third power amplifier 173 is connected to the third signal input terminal T13. The input terminal of the third power amplifier 173 is connected to the signal processing circuit 301 via the third signal input terminal T13. The output terminal of the third power amplifier 173 is connected to the third transmit filter 113 via the third output matching circuit 133. The third power amplifier 173 is a power amplifier capable of amplifying high-frequency signals within the passband of the third transmit filter 113. The third output matching circuit 133 is a circuit that achieves impedance matching between the third power amplifier 173 and the third transmit filter 113, and includes, for example, multiple inductors and multiple capacitors.

[0056] The high-frequency circuit 200 may further include a controller that controls the first power amplifier 171 , the second power amplifier 172 , and the third power amplifier 173 based on a control signal from the signal processing circuit 301 , for example.

[0057] The first low-noise amplifier 161 has an input terminal and an output terminal. The first low-noise amplifier 161 amplifies the received signal input to the input terminal of the first low-noise amplifier 161 and outputs the signal from the output terminal of the first low-noise amplifier 161. The input terminal of the first low-noise amplifier 161 is connected to the first receive filter 121 via the first input matching circuit 141. The first input matching circuit 141 is a circuit for achieving impedance matching between the first low-noise amplifier 161 and the first receive filter 121. The first input matching circuit 141 includes, for example, an inductor. The output terminal of the first low-noise amplifier 161 is connected to the first signal output terminal T21. The output terminal of the first low-noise amplifier 161 is connected to the signal processing circuit 301, for example, via the first signal output terminal T21.

[0058] The second low-noise amplifier 162 has an input terminal and an output terminal. The second low-noise amplifier 162 amplifies the received signal input to the input terminal of the second low-noise amplifier 162 and outputs the signal from the output terminal of the second low-noise amplifier 162. The input terminal of the second low-noise amplifier 162 is connected to the second receive filter 122 via the second input matching circuit 142. The second input matching circuit 142 is a circuit for achieving impedance matching between the second low-noise amplifier 162 and the second receive filter 122. The second input matching circuit 142 includes, for example, an inductor. The output terminal of the second low-noise amplifier 162 is connected to the signal processing circuit 301 via, for example, the second signal output terminal T22.

[0059] The third low-noise amplifier 163 has an input terminal and an output terminal. The third low-noise amplifier 163 amplifies the received signal input to the input terminal of the third low-noise amplifier 163 and outputs the signal from the output terminal of the third low-noise amplifier 163. The input terminal of the third low-noise amplifier 163 is connected to the third receive filter 123 via the third input matching circuit 143. The third input matching circuit 143 is a circuit for achieving impedance matching between the third low-noise amplifier 163 and the third receive filter 123. The third input matching circuit 143 includes, for example, an inductor. The output terminal of the third low-noise amplifier 163 is connected to the signal processing circuit 301 via, for example, the third signal output terminal T23.

[0060] (2.2) Circuit structure of high-frequency module

[0061] like Figure 1 As shown, the high-frequency module 100 includes a first signal terminal 101 , a second signal terminal 102 , a third signal terminal 103 , a first filter 1 (hybrid filter 1 ), a second filter 2 , and a third filter 3 .

[0062] Hybrid filter 1 includes a first elastic wave filter 10, a plurality of first inductors L11, L12, and L13, and a plurality of capacitors C11, C12, C13, and C14. First elastic wave filter 10 includes at least one (e.g., three) elastic wave resonators 14. First elastic wave filter 10 is, for example, a surface acoustic wave filter utilizing surface acoustic waves. In this case, each of the plurality of elastic wave resonators 14 is a SAW (Surface Acoustic Wave) resonator.

[0063] First elastic wave filter 10 is, for example, a π-type filter. It includes three elastic wave resonators 14, a first input / output electrode 15 connected to a first signal terminal 101, a second input / output electrode 16 connected to a second signal terminal 102, and two ground electrodes. Three elastic wave resonators 14 include one series-arm resonator S11 and two parallel-arm resonators P11 and P12.

[0064] The series arm resonator S11 is provided on a path 150 (hereinafter also referred to as a series arm path 150 ) between the first input / output electrode 15 and the second input / output electrode 16 . The series arm resonator S11 is connected between the first signal terminal 101 and the second signal terminal 102 .

[0065] The parallel arm resonator P11 is provided on a path 151 (parallel arm path 151) between the first input / output electrode 15 and the series arm resonator S11, and between the ground electrode 17, on the series arm path 150. The parallel arm resonator P12 is provided on a path 152 (parallel arm path 152) between the series arm resonator S11 and the second input / output electrode 16, and between the ground electrode 18, on the series arm path 150.

[0066] The first inductor L11 is connected between the first signal terminal 101 and the first elastic wave filter 10. Here, the first inductor L11 is connected in series with the first elastic wave filter 10. More specifically, one end of the first inductor L11 is connected to the first signal terminal 101, and the other end of the first inductor L11 is connected to the first input / output electrode 15 of the first elastic wave filter 10. Thus, the first inductor L11 is connected in series with the series arm resonator S11 of the first elastic wave filter 10.

[0067] The first inductor L12 is connected between the first elastic wave filter 10 and the second signal terminal 102. Here, the first inductor L12 is connected in series with the first elastic wave filter 10. More specifically, one end of the first inductor L12 is connected to the second input / output electrode 16 of the first elastic wave filter 10, and the other end of the first inductor L11 is connected to the second signal terminal 102. Thus, the first inductor L12 is connected in series with the series arm resonator S11 of the first elastic wave filter 10. The first inductor L12 is the inductor closest to the second signal terminal 102 in the signal path between the first signal terminal 101 and the second signal terminal 102.

[0068] One end of the first inductor L13 is connected to the path between the first inductor L12 and the second signal terminal 102, and the other end of the first inductor L13 is connected to the ground (ground terminal 107) of the high-frequency module 100. In the hybrid filter 1, the LC circuit connected between the first elastic wave filter 10 and the second signal terminal 102 functions to widen the passband width of the hybrid filter 1 relative to the passband width of the elastic wave resonator 14 and to serve as an impedance matching circuit. The LC circuit includes the first inductor L12, the first inductor L13, the first capacitor C12, the first capacitor C13, and the first capacitor C14.

[0069] The first capacitor C11 is connected in parallel with the first inductor L11. The parallel circuit of the first capacitor C11 and the first inductor L11 also functions as a phase shift circuit.

[0070] The first capacitor C12 is connected in parallel with the first inductor L12.

[0071] The first capacitor C13 is connected in series with the first inductor L13 . More specifically, the first capacitor C13 is connected between the first inductor L13 and the ground terminal 107 of the high-frequency module 100 .

[0072] The first capacitor C14 is connected between the first inductor L12 and the second signal terminal 102. The first capacitor C14 is connected in series with the first inductor L12.

[0073] Compared to a case consisting solely of the first elastic wave filter 10, the hybrid filter 1 has a larger passband width. Furthermore, compared to a case consisting solely of an LC filter, the hybrid filter 1 has improved attenuation characteristics near the passband. The passband width of the hybrid filter 1 is the frequency range within which the insertion loss in the filter characteristics is 3 dB or less. As described above, the passband width of the hybrid filter 1 is greater than the passband width of the elastic wave resonator 14. The passband width of the elastic wave resonator 14 is the relative bandwidth of the elastic wave resonator 14 and is the difference between the antiresonant frequency and the resonant frequency of the elastic wave resonator 14.

[0074] The second filter 2 is an LC filter and includes a plurality of second inductors L21 and L22 and a plurality of second capacitors C21, C22, and C23.

[0075] In the second filter 2, a series circuit comprising a second capacitor C21, a second capacitor C23, and a second inductor L22 is connected between the first signal terminal 101 and the third signal terminal 103. Here, one end of the second capacitor C21 is connected to the first signal terminal 101, and the other end of the second capacitor C21 is connected to one end of the second capacitor C23. The other end of the second capacitor C23 is connected to one end of the second inductor L22. The other end of the second inductor L22 is connected to the third signal terminal 103.

[0076] In the second filter 2, a series circuit consisting of a second inductor L21 and a second capacitor C22 is connected between the path between the second capacitors C21 and C23 and the ground terminal 107 of the high-frequency module 100. Here, one end of the second inductor L21 is connected to the path between the second capacitors C21 and C23, and the other end of the second inductor L21 is connected to one end of the second capacitor C22. The other end of the second capacitor C22 is connected to the ground terminal 107 of the high-frequency module 100.

[0077] The third filter 3 is connected between the first signal terminal 101 and the fourth signal terminal 104. The third filter 3 includes a second elastic wave filter 30 and an inductor L30. The second elastic wave filter 30 includes at least one (e.g., ten) elastic wave resonators 34. The second elastic wave filter 30 is, for example, a surface elastic wave filter utilizing surface acoustic waves. In this case, each of the plurality of elastic wave resonators 34 is a SAW resonator.

[0078] Second elastic wave filter 30 is, for example, a ladder filter. It includes ten elastic wave resonators 34, a first input / output electrode 35 connected to first signal terminal 101, a second input / output electrode 36 connected to fourth signal terminal 104, and a ground electrode 37. The ten elastic wave resonators 34 include five series-arm resonators S31, S32, S33, S34, and S35, and five parallel-arm resonators P31, P32, P33, P34, and P35.

[0079] Five series-arm resonators S31, S32, S33, S34, and S35 are provided on a path 350 (hereinafter referred to as the series-arm path 350) between the first input / output electrode 35 and the second input / output electrode 36. The five series-arm resonators S31, S32, S33, S34, and S35 are connected in series on the series-arm path 350. In the second elastic wave filter 30, the five series-arm resonators S31, S32, S33, S34, and S35 are arranged on the series-arm path 350 in the order of the series-arm resonator S31, the series-arm resonator S32, the series-arm resonator S33, the series-arm resonator S34, and the series-arm resonator S35, from the first input / output electrode 35 side.

[0080] The parallel arm resonator P31 is provided on a path 351 (parallel arm path 351) between the first input / output electrode 35 and the series arm resonator S31 on the series arm path 350, and between the ground electrode 37. The parallel arm resonator P32 is provided on a path 352 (parallel arm path 352) between the series arm resonators S31 and S32 on the series arm path 350, and between the ground electrode 37. The parallel arm resonator P33 is provided on a path 353 (parallel arm path 353) between the series arm resonators S32 and S33 on the series arm path 350, and between the ground electrode 37. The parallel arm resonator P34 is provided on a path 354 (parallel arm path 354) between the series arm resonators S33 and S34 on the series arm path 350, and between the ground electrode 37. The parallel arm resonator P35 is provided on a path between the series arm resonator S35 and the second input-output electrode 36 on the series arm path 350 , and on a path 355 (parallel arm path 355 ) between the ground electrode 37 .

[0081] Inductor L30 is the inductance component of the wiring connecting ground electrode 37 of second elastic wave filter 30 and ground terminal 107 .

[0082] The high-frequency module 100 further includes a capacitor C32 . The capacitor C32 is a capacitance component of a wiring connecting the path between the second elastic wave filter 30 and the fourth signal terminal 104 and the ground terminal 107 .

[0083] The high-frequency module 100 also includes an inductor L1, an inductor L2, an inductor L3, and a capacitor C2. Inductor L1 is connected between the first filter 1 and the third filter 3. For example, inductor L1 functions to match the impedance between the first and third filters 1 and 3 and the first signal terminal 101. The series circuit of inductor L2 and capacitor C2 is connected between a common path between the first filter 1 and the first signal terminal 101 and a path between the third filter 3 and the first signal terminal 101, and ground. More specifically, the series circuit of inductor L2 and capacitor C2 is connected between the connection point between the first filter 1 and the third filter 3, the path between the first inductor L1, and ground. The series circuit of inductor L2 and capacitor C2 attenuates high-frequency signals in the passband of the first filter 1 and the passband of the third filter 3. Furthermore, inductor L3 is connected between the common path and ground. More specifically, inductor L3 is connected in parallel with the series circuit of inductor L2 and capacitor C2. The inductor L3 is an inductor for ESD (Electro-Static Discharge) countermeasures.

[0084] Furthermore, the high-frequency module 100 further includes a capacitor C31 connected between the first signal terminal 101 and the third filter 3 .

[0085] (2.3) Structure of high-frequency module

[0086] The following is based on Figures 2 to 10 The structure of the high-frequency module 100 will be described.

[0087] like Figure 2As shown, the high-frequency module 100 includes a mounting substrate 4, a first signal terminal 101, a second signal terminal 102, a third signal terminal 103, a fourth signal terminal 104, and a plurality of ground terminals 107. Furthermore, the high-frequency module 100 includes a first elastic wave filter 10, a plurality of first inductors L11, L12, and L13, a plurality of first capacitors C11, C12, C13, and C14, a plurality of second inductors L21 and L22, and a plurality of second capacitors C21, C22, and C23. Furthermore, the high-frequency module 100 includes a second elastic wave filter 30, a third inductor L30, a capacitor C31, and a capacitor C32 (see FIG. 1 ). Figure 1 ). In addition, the high frequency module 100 further includes an inductor L1, an inductor L2, an inductor L3 and a capacitor C2. Figure 6 and 7 As shown, the high-frequency module 100 further includes a resin layer 5 and a metal electrode layer 6 .

[0088] The mounting substrate 4 has a first principal surface 41 and a second principal surface 42 that oppose each other in the thickness direction D1 of the mounting substrate 4. The mounting substrate 4 is, for example, a multilayer substrate including multiple dielectric layers and multiple conductive layers. The multiple dielectric layers and the multiple conductive layers are stacked in the thickness direction D1 of the mounting substrate 4. The multiple conductive layers are formed into a predetermined pattern for each layer. Each of the multiple conductive layers includes one or more conductors within a plane perpendicular to the thickness direction D1 of the mounting substrate 4. Each conductive layer is made of, for example, copper. The multiple conductive layers include a ground conductor 44. In the high-frequency module 100, the ground terminal 107 and the ground conductor 44 are electrically connected via a via conductor or the like on the mounting substrate 4. The mounting substrate 4 is, for example, an LTCC (Low Temperature Co-fired Ceramics) substrate. The mounting substrate 4 is not limited to an LTCC substrate and may also be, for example, a printed wiring board, an HTCC (High Temperature Co-fired Ceramics) substrate, or a resin multilayer substrate. When viewed from the thickness direction D1 of the mounting substrate 4, the outer edge 430 of the first main surface 41 and the outer edge 432 of the second main surface 42 of the mounting substrate 4 (see Figure 6 and Figure 7 ) is a rectangular shape (e.g., a rectangle).

[0089] In addition, the mounting substrate 4 is not limited to an LTCC substrate, and may be, for example, a wiring structure. The wiring structure is, for example, a multilayer structure. The multilayer structure includes at least one insulating layer and at least one conductive layer. The insulating layer is formed into a prescribed pattern. When there are multiple insulating layers, the multiple insulating layers are formed into a prescribed pattern prescribed for each layer. The conductive layer is formed into a prescribed pattern different from the prescribed pattern of the insulating layer. When there are multiple conductive layers, the multiple conductive layers are formed into a prescribed pattern prescribed for each layer. The conductive layer may also include one or more rewiring portions. In the wiring structure, the first of the two surfaces facing each other in the thickness direction of the multilayer structure is the first main surface 41 of the mounting substrate 4, and the second surface is the second main surface 42 of the mounting substrate 4. The wiring structure may also be, for example, an interposer. The interposer may be an interposer using a silicon substrate, or a substrate composed of multiple layers.

[0090] The first principal surface 41 and the second principal surface 42 of the mounting substrate 4 are separated in the thickness direction D1 of the mounting substrate 4 and intersect with the thickness direction D1 of the mounting substrate 4. The first principal surface 41 of the mounting substrate 4 is, for example, perpendicular to the thickness direction D1 of the mounting substrate 4, but may also include, for example, the side surface of a conductor portion as a surface not perpendicular to the thickness direction D1. Furthermore, the second principal surface 42 of the mounting substrate 4 is, for example, perpendicular to the thickness direction D1 of the mounting substrate 4, but may also include, for example, the side surface of a conductor portion as a surface not perpendicular to the thickness direction D1. Furthermore, the first principal surface 41 and the second principal surface 42 of the mounting substrate 4 may also have microscopic projections and depressions, or concave or convex portions.

[0091] The high-frequency module 100 includes multiple external connection terminals arranged on the second principal surface 42 of the mounting substrate 4. "External connection terminals arranged on the second principal surface 42 of the mounting substrate 4" includes both mechanical connection to the second principal surface 42 of the mounting substrate 4 and electrical connection to (appropriate conductor portions of) the mounting substrate 4. The multiple external connection terminals include a first signal terminal 101, a second signal terminal 102, a third signal terminal 103, a fourth signal terminal 104, and multiple ground terminals 107. The multiple ground terminals 107 are electrically connected to the ground conductor 44 of the mounting substrate 4. The ground conductor 44 serves as the circuit ground for the high-frequency module 100. When viewed from above in the thickness direction D1 of the mounting substrate 4, the first signal terminal 101, the second signal terminal 102, the third signal terminal 103, the multiple ground terminals 107 are each rectangular. The thickness of the first signal terminal 101, the second signal terminal 102, the third signal terminal 103, the fourth signal terminal 104, and the multiple ground terminals 107 is thinner than the thickness of the mounting substrate 4. The external connection terminals may be made of metal (eg, copper, copper alloy, etc.). Furthermore, the external connection terminals may be disposed on the second main surface 42 of the mounting substrate 4 or at least partially embedded within the mounting substrate 4 .

[0092] In the high frequency module 100, as Figure 2 As shown, the electronic component E1 including the first elastic wave filter 10 and the second elastic wave filter 30 is mounted on the first main surface 41 of the mounting substrate 4. The term "the electronic component E1 is mounted on the first main surface 41 of the mounting substrate 4" includes both the electronic component E1 being arranged on the first main surface 41 of the mounting substrate 4 (mechanically connected) and the electronic component E1 being electrically connected to (appropriate conductor portions of) the mounting substrate 4. In the high-frequency module 100, the first input / output electrode 15, the second input / output electrode 16, and the two ground electrodes 17 and 18 (see Figure 1 ) is connected to the mounting substrate 4. In the high-frequency module 100, the first input / output electrode 35, the second input / output electrode 36, and the ground electrode 37 (see Figure 1 ) is connected to mounting substrate 4. First input / output electrode 15, second input / output electrode 16, and two ground electrodes 17 and 18 of first elastic wave filter 10 each include a conductive bump. First input / output electrode 35, second input / output electrode 36, and ground electrode 37 of second elastic wave filter 30 each include a conductive bump. The conductive bumps are made of, for example, solder, gold, or copper.

[0093] For example, Figure 10As shown, electronic component E1 includes a first elastic wave filter 10 and a second elastic wave filter 30. The first elastic wave filter 10 includes a first substrate (substrate 1000). The second elastic wave filter 30 includes a second substrate (substrate 1000). In electronic component E1, the first and second substrates are shared. In other words, in electronic component E1, the first and second substrates are the same substrate 1000. When viewed from above in the thickness direction D1 of the mounting substrate 4, the outer edge of substrate 1000 is rectangular. In electronic component E1, the first and second elastic wave filters 10 and 30 are arranged along the longitudinal direction of substrate 1000. When viewed from above in the thickness direction D1 of the mounting substrate 4, the outer edge of electronic component E1 is the same rectangular shape as the outer edge of substrate 1000. Substrate 1000 has a first principal surface 1001 and a second principal surface 1002 that oppose each other in the thickness direction of substrate 1000 (along the thickness direction D1 of the mounting substrate 4). In the following description, “on the substrate 1000 ” means “on the first main surface 1001 of the substrate 1000 ”.

[0094] As described above, the first elastic wave filter 10 includes, for example, a plurality of (three) elastic wave resonators 14 (see Figure 1 ) of the π-type filter.

[0095] The first substrate (substrate 1000) is a piezoelectric substrate, for example, a lithium tantalate substrate or a lithium niobate substrate. The first elastic wave filter 10 includes multiple (for example, three) first interdigital transducer (IDT) electrodes 140 disposed on the first substrate (substrate 1000). The multiple first IDT electrodes 140 are conductive. Examples of materials for the multiple first IDT electrodes 140 include Al (aluminum), Cu (copper), Pt (platinum), Au (gold), Ag (silver), Ti (titanium), Ni (nickel), Cr (chromium), Mo (molybdenum), W (tungsten), Ta (tantalum), Mg (magnesium), Fe (iron), or alloys primarily composed of any of these metals. Alternatively, the multiple first IDT electrodes 140 may have a structure formed by stacking multiple metal films composed of these metals or alloys. For example, the multiple first IDT electrodes 140 may include a stacked film of a first metal film composed of a Ti film formed on the substrate 1000 and a second metal film composed of an Al film formed on the first metal film. The first metal film has a function as a close-fitting film. The material of the first metal film is Ti, but is not limited thereto. For example, it may be Cr or NiCr. In addition, the material of the second metal film is Al, but is not limited thereto. For example, it may contain Al and Cu. The thickness of the first metal film is thinner than that of the second metal film. In the first elastic wave filter 10, each of the plurality of first IDT electrodes 140 is a component of the SAW resonator. In addition, in the first elastic wave filter 10, a plurality of first wiring portions connecting the plurality of first IDT electrodes 140 are provided on the first substrate (substrate 1000). In the first elastic wave filter 10, the series arm path 150, the parallel arm path 151, and the parallel arm path 152 (see Figure 1 In first elastic wave filter 10, multiple elastic wave resonators 14 are connected by connecting multiple first IDT electrodes 140. In first elastic wave filter 10, first input / output electrode 15, second input / output electrode 16, and two ground electrodes 17 and 18 are provided on a first substrate (substrate 1000).

[0096] As described above, the second elastic wave filter 30 includes, for example, a plurality of (ten) elastic wave resonators 34 (see Figure 1 ) ladder filter.

[0097] The second substrate (substrate 1000) is a piezoelectric substrate, for example, a lithium tantalate substrate or a lithium niobate substrate. The second elastic wave filter 30 has a plurality of (for example, ten) second IDT electrodes 340 provided on the second substrate (substrate 1000). The material of the plurality of second IDT electrodes 340 is the same as the material of the plurality of first IDT electrodes 140. In the second elastic wave filter 30, each of the plurality of second IDT electrodes 340 is a constituent element of a SAW resonator. In addition, in the second elastic wave filter 30, a plurality of second wiring portions connecting the plurality of second IDT electrodes 340 are provided on the second substrate (substrate 1000). In the second elastic wave filter 30, a series arm path 350 and five parallel arm paths 351 to 355 (see Figure 1 In the second elastic wave filter 30 , the plurality of elastic wave resonators 34 are connected by connecting the plurality of second IDT electrodes 340 . In the second elastic wave filter 30 , the first input / output electrode 35 , the second input / output electrode 36 , and the ground electrode 37 are provided on the second substrate (substrate 1000 ).

[0098] First elastic wave filter 10 is disposed on first principal surface 41 of mounting substrate 4 such that multiple first IDT electrodes 140 are located on the mounting substrate 4 side when viewed from the first substrate. Second elastic wave filter 30 is disposed on first principal surface 41 of mounting substrate 4 such that multiple second IDT electrodes 340 are located on the mounting substrate 4 side when viewed from the second substrate.

[0099] The first elastic wave filter 10 also includes components of a first package. The components of the first package include, for example, a first isolation layer (isolation layer 1006), a first cover member (cover member 1007), and a plurality of first external terminals (first input / output electrode 15, second input / output electrode 16, and two ground electrodes 17 and 18). The first isolation layer is provided on the first substrate. When viewed from above in the thickness direction of the first substrate, the first isolation layer includes a portion formed along the outer edge of the first substrate. The first isolation layer is electrically insulating. The material of the first isolation layer is epoxy resin, polyimide, or the like. The first cover member is flat. The first cover member is disposed on the first isolation layer so as to face the first substrate in the thickness direction. The first cover member overlaps with the plurality of first IDT electrodes 140 in the thickness direction of the first substrate and is separated from the plurality of first IDT electrodes 140 in the thickness direction of the first substrate. The first cover member is electrically insulating. The material of the first cover member is epoxy resin, polyimide, or the like. The plurality of first external terminals are exposed from the first cover member.

[0100] The second elastic wave filter 30 also includes components of a second package. The components of the second package include, for example, a second isolation layer (isolation layer 1006), a second cover member (cover member 1007), and a plurality of second external terminals (first input / output electrode 35, second input / output electrode 36, and ground electrode 37). The second isolation layer is provided on the second substrate. When viewed from above in the thickness direction of the second substrate, the second isolation layer includes a portion formed along the outer edge of the second substrate. The second isolation layer is electrically insulating. The material of the second isolation layer is epoxy resin, polyimide, or the like. The second cover member is flat. The second cover member is arranged on the second isolation layer so as to face the second substrate in the thickness direction. The second cover member overlaps with the plurality of second IDT electrodes 340 in the thickness direction of the second substrate and is separated from the plurality of second IDT electrodes 340 in the thickness direction of the second substrate. The second cover member is electrically insulating. The material of the second cover member is epoxy resin, polyimide, or the like. The plurality of second external terminals are exposed from the second cover member.

[0101] In electronic component E1, the first and second isolating layers are shared. In other words, in electronic component E1, the first and second isolating layers are the same isolating layer 1006. Furthermore, in electronic component E1, the first and second cover members are the same cover member 1007. In first elastic wave filter 10, first input / output electrode 15, second input / output electrode 16, and two ground electrodes 17 and 18 have conductive electrodes that penetrate through isolating layer 1006 and cover member 1007, and conductive bumps on the conductive electrodes. In second elastic wave filter 30, first input / output electrode 35, second input / output electrode 36, and ground electrode 37 have conductive electrodes that penetrate through isolating layer 1006 and cover member 1007, and conductive bumps on the conductive electrodes.

[0102] The first and second substrates described above are not limited to piezoelectric substrates. For example, they may also be stacked substrates comprising a silicon substrate, a low-acoustic-velocity film disposed on the silicon substrate, and a piezoelectric layer disposed on the low-acoustic-velocity film. The piezoelectric layer may be made of, for example, lithium niobate or lithium tantalate. The low-acoustic-velocity film is a film in which the acoustic velocity of the bulk waves propagating through the piezoelectric layer is lower than that of the bulk waves propagating through the piezoelectric layer. The low-acoustic-velocity film may be made of, for example, silicon oxide. The material of the low-acoustic-velocity film is not limited to silicon oxide. The material of the low-acoustic-velocity film may also be, for example, silicon oxide, glass, silicon oxynitride, tantalum oxide, compounds containing fluorine, carbon, or boron added to silicon oxide, or materials primarily composed of any of the above materials. In the silicon substrate, the acoustic velocity of the bulk waves propagating through the piezoelectric layer is higher than that of the elastic waves propagating through the silicon substrate. Here, the bulk waves propagating through the silicon substrate are the lowest of the multiple bulk waves propagating through the silicon substrate.

[0103] The laminated substrate may also include a high-acoustic-wave membrane disposed between the silicon substrate and the low-acoustic-velocity membrane. The high-acoustic-wave membrane is a membrane in which the acoustic waves of the bulk waves propagating through the high-acoustic-wave membrane are higher in speed than the acoustic waves of the elastic waves propagating through the piezoelectric layer. The material of the high-acoustic-wave membrane may be, for example, at least one material selected from the group consisting of diamond-like carbon, aluminum nitride, aluminum oxide, silicon carbide, silicon nitride, silicon, sapphire, piezoelectric material (lithium tantalate, lithium niobate, or crystal), aluminum oxide, zirconium oxide, cordierite, mullite, talc, forsterite, magnesium oxide, and diamond. The material of the high-acoustic-wave membrane may also be a material having any of the above materials as a main component, or a material having a mixture containing any of the above materials as a main component.

[0104] Furthermore, the laminated substrate may include, for example, a contact layer sandwiched between the low-acoustic-velocity film and the piezoelectric layer. The contact layer may be composed, for example, of a resin (epoxy resin, polyimide resin). Furthermore, the laminated substrate may include a dielectric film at any location between the low-acoustic-velocity film and the piezoelectric layer, on the piezoelectric layer, or below the low-acoustic-velocity film.

[0105] In the high-frequency module 100, multiple electronic components are mounted on the first principal surface 41 of the mounting substrate 4. These multiple electronic components include the aforementioned electronic component E1, multiple first inductors L11, L12, and L13, and a second inductor L21. The phrase "the electronic components are mounted on the first principal surface 41 of the mounting substrate 4" includes both the electronic components being arranged on the first principal surface 41 of the mounting substrate 4 (mechanically connected) and the electronic components being electrically connected to (appropriate conductor portions of) the mounting substrate 4. Furthermore, in the high-frequency module 100, the inductor L22 is built into the mounting substrate 4. Furthermore, in the high-frequency module 100, multiple first capacitors C11, C12, C13, and C14 and multiple second capacitors C21, C22, and C23 are built into the mounting substrate 4. Furthermore, in the high-frequency module 100, the capacitor C2 is built into the mounting substrate 4.

[0106] Each of the plurality of first inductors L11 , L12 , and L13 is, for example, a chip inductor, and has a rectangular outer edge when viewed from above in the thickness direction D1 of the mounting substrate 4 .

[0107] The second inductor L21 is, for example, a chip inductor, and has a rectangular outer edge when viewed from above in the thickness direction D1 of the mounting substrate 4 .

[0108] The second inductor L22 is a circuit element including a conductor pattern portion 48 formed on the mounting substrate 4. For example, Figures 6-8 As shown in FIG9A to FIG9D , the second inductor L22 includes a plurality of (for example, four) conductor pattern portions 48 and a plurality of (for example, three) via conductor portions 49 (see FIG9A ). Figure 9A to 9C). In the second inductor L22, multiple conductor patterns 48 and multiple via conductors 49 are alternately arranged in the thickness direction D1 of the mounting substrate 4. One end of two adjacent conductor patterns 48 in the thickness direction D1 of the mounting substrate 4 is connected via a single via conductor 49. For convenience, the multiple conductor patterns 48 may be referred to as the first conductor pattern 481, the second conductor pattern 482, the third conductor pattern 483, and the fourth conductor pattern 484 in the order of proximity to the second principal surface 42 of the mounting substrate 4 in the thickness direction D1 of the mounting substrate 4. Furthermore, the multiple via conductors 49 may be referred to as the first via conductor 491, the second via conductor 492, and the third via conductor 493 in the order of proximity to the second principal surface 42 of the mounting substrate 4 in the thickness direction D1 of the mounting substrate 4. The first via conductor 491 connects the first conductor pattern 481 and the second conductor pattern 482. The second via conductor portion 492 connects the second conductor pattern portion 482 and the third conductor pattern portion 483. The third via conductor portion 493 connects the third conductor pattern portion 483 and the fourth conductor pattern portion 484. In the second inductor L22, the fourth conductor pattern portion 484 is connected to the second capacitor C23 (see FIG. 1 ) built into the mounting substrate 4 via the via conductor portion. Figure 1 ) is connected to the conductor pattern portion of the first conductor pattern portion 481, and the first conductor pattern portion 481 is connected to the third signal terminal 103 via the conducting conductor portion. When viewed from the thickness direction D1 of the mounting substrate 4, the second inductor L22 is, for example, in the shape of a rectangular frame, but is not limited to the rectangular frame shape. The winding axis F1 ( Figure 8 as well as Figure 9 A to 9D) along the thickness direction D1 of the mounting substrate 4. The winding axis F1 of the second inductor L22 is the virtual center axis of the second inductor L22. The winding axis F1 of the inductor L22 is parallel to the thickness direction D1 of the mounting substrate 4, but this is not necessarily a strict parallel. The angle formed by the winding axis F1 and the thickness direction D1 of the mounting substrate 4 can be no greater than 10 degrees.

[0109] The plurality of first capacitors C11, C12, C13, and C14 and the plurality of second capacitors C21, C22, and C23 each include a pair of conductor pattern portions 45, 45 facing each other in the thickness direction D1 of the mounting substrate 4 (see FIG. Figure 6 ).

[0110] like Figure 6 and 7 As shown, the resin layer 5 is disposed on the first main surface 41 of the mounting substrate 4. The resin layer 5 includes a resin (for example, an epoxy resin). The resin layer 5 may also include a filler in addition to the resin.

[0111] Resin layer 5 covers electronic component E1, multiple first inductors L11, L12, and L13, and second inductor L21. In other words, resin layer 5 covers the outer peripheral surface of each of the multiple electronic components, as well as the principal surface of each of the multiple electronic components on the side opposite to mounting substrate 4. The outer peripheral surface of each of the multiple electronic components includes four side surfaces connecting the first principal surface on the mounting substrate 4 side and the second principal surface on the side opposite to mounting substrate 4 in the electronic component.

[0112] The metal electrode layer 6 covers the resin layer 5 and is connected to the ground terminal 107. The metal electrode layer 6 is conductive. In the high-frequency module 100, the metal electrode layer 6 is a shielding layer provided for electromagnetic shielding both inside and outside the high-frequency module 100. The metal electrode layer 6 has a multilayer structure composed of multiple stacked metal layers, but is not limited to this structure and may also be a single metal layer. The metal layers may contain one or more metals. For example, when the metal electrode layer 6 has a multilayer structure composed of multiple stacked metal layers, it may include a first stainless steel layer, a Cu layer on the first stainless steel layer, and a second stainless steel layer on the Cu layer. The first and second stainless steel layers are each made of an alloy containing Fe, Ni, and Cr. Furthermore, when the metal electrode layer 6 is a single metal layer, it may be a Cu layer, for example. The metal electrode layer 6 includes a first conductor portion 61 and a second conductor portion 62. The first conductor portion 61 covers the main surface 51 of the resin layer 5 opposite the mounting substrate 4. The second conductor portion 62 covers the outer peripheral surface 53 of the resin layer 5 and the outer peripheral surface 43 of the mounting substrate 4. The outer peripheral surface 43 of the mounting substrate 4 includes four side surfaces connecting the first main surface 41 and the second main surface 42 in the mounting substrate 4. The metal electrode layer 6 and the ground conductor portion 44 (see Figure 5 ) contacts a portion of the outer peripheral surface of the metal electrode layer 6. The ground conductor portion 44 is connected to the ground terminal 107. In the high-frequency module 100, when the mounting substrate 4 includes a second ground conductor portion connected to the ground conductor portion 44 (hereinafter also referred to as the first ground conductor portion 44), at least one of the first ground conductor portion 44 and the second ground conductor portion only needs to contact the metal electrode layer 6.

[0113] (2.4) Layout of high-frequency modules

[0114] In the high frequency module 100, as Figure 2 As shown, the plurality of first inductors L11, L12, L13 and the second inductor L21 are chip inductors (surface mount inductors) and are arranged on the first main surface 41 of the mounting substrate 4. In addition, in the high frequency module 100, as shown in FIG. Figure 6 and Figure 7 As shown, the second inductor L22 is a circuit element including a conductor pattern portion 48 formed on the mounting substrate 4 .

[0115] like Figure 2 As shown, in high-frequency module 100, multiple first inductors L11, L12, and L13 are adjacent to first elastic wave filter 10 on first principal surface 41 of mounting substrate 4. "The multiple first inductors L11, L12, and L13 are adjacent to first elastic wave filter 10" means that there are no other electronic components between each of the multiple first inductors L11, L12, and L13 and first elastic wave filter 10 on first principal surface 41 of mounting substrate 4, and each of the multiple first inductors L11, L12, and L13 is adjacent to first elastic wave filter 10.

[0116] As described above, when viewed from the thickness direction D1 of the mounting substrate 4, the mounting substrate 4 has a rectangular shape. Figure 3 As shown, the first signal terminal 101 , the second signal terminal 102 , the third signal terminal 103 and the fourth signal terminal 104 are respectively arranged at the first corner 421 , the second corner 422 , the third corner 423 and the fourth corner 424 of the second main surface 42 of the mounting substrate 4 .

[0117] like Figure 2 As shown, when viewed from above in the thickness direction D1 of the mounting substrate 4, the first capacitor C14 overlaps with the second signal terminal 102. In the high-frequency module 100, when viewed from above in the thickness direction D1 of the mounting substrate 4, a portion of the first capacitor C14 overlaps with a portion of the second signal terminal 102. However, this is not limiting. For example, the entire first capacitor C14 may overlap with a portion of the second signal terminal 102, the entire first capacitor C14 may overlap with the entire second signal terminal 102, or a portion of the first capacitor C14 may overlap with the entire second signal terminal 102. When viewed from above in the thickness direction D1 of the mounting substrate 4, the second inductor L22 overlaps with the third signal terminal 103. In the high-frequency module 100, when viewed from above in the thickness direction D1 of the mounting substrate 4, a portion of the second inductor L22 overlaps with a portion of the third signal terminal 103. However, this is not limiting. For example, the entire second inductor L22 may overlap with a portion of the third signal terminal 103.

[0118] like Figure 5 As shown, in the high-frequency module 100 , the first signal terminal 101 , the second signal terminal 102 , the third signal terminal 103 , and the fourth signal terminal 104 do not overlap with the ground conductor 44 when viewed from above in the thickness direction D1 of the mounting substrate 4 .

[0119] In high-frequency module 100, the shortest distance between the outer peripheral surface 43 of mounting substrate 4 and third signal terminal 103 connected to the circuit element (second inductor L22) is longer than the shortest distance between the outer peripheral surface 43 of mounting substrate 4 and the circuit element (second inductor L22). This point will be described in more detail below.

[0120] like Figure 4 As shown, when viewed from above in the thickness direction D1 of the mounting substrate 4, the first signal terminal 101, the second signal terminal 102, the third signal terminal 103, and the fourth signal terminal 104 have a rectangular shape. When viewed from above in the thickness direction D1 of the mounting substrate 4, the outer edge 1030 of the third signal terminal 103 includes a first side 1031 and a second side 1032. The first side 1031 is adjacent to the outer edge 432 of the second principal surface 42 of the mounting substrate 4 in a first direction D11, and the second side 1032 is adjacent to the outer edge 432 of the second principal surface 42 of the mounting substrate 4 in a second direction D12 that is orthogonal to the first direction D11. The first direction D11 is the direction along the first side (long side) of the outer edge 430 of the first principal surface 41 of the mounting substrate 4 when viewed from above in the thickness direction D1. The second direction D12 is the direction along the second side (short side) of the outer edge 430 of the first principal surface 41 of the mounting substrate 4 when viewed from above in the thickness direction D1. The first direction D11 and the second direction D12 are orthogonal to each other. Furthermore, the first direction D11 and the second direction D12 are both orthogonal to the thickness direction D1 of the mounting substrate 4. In the first direction D11, the shortest distance W31 between the first side 1031 of the outer edge 1030 of the third signal terminal 103 and the outer peripheral surface 43 of the mounting substrate 4 is longer than the shortest distance W11 between the outer peripheral surface 43 of the mounting substrate 4 and the second inductor L22. In the second direction D12, the shortest distance W32 between the second side 1032 of the outer edge 1030 of the third signal terminal 103 and the outer peripheral surface 43 of the mounting substrate 4 is longer than the shortest distance W12 between the outer peripheral surface 43 of the mounting substrate 4 and the second inductor L22.

[0121] In the high-frequency module 100, the shortest distance W31 (see Figure 4 ) and the distance A0 between the third signal terminal 103 and the outer peripheral surface 43 of the mounting substrate 4 in the first direction D11 (refer to Figure 9 E) is the same. The distance A0 is the shortest distance between the third signal terminal 103 and the outer peripheral surface 43 of the mounting substrate 4 in the first direction D11. In addition, in the high-frequency module 100, the shortest distance W11 (see Figure 4 ) is the distance A1 (refer to Figure 9 D), distance A2 (refer to Figure 9 C), distance A3 (refer to Figure 9 B) and distance A4 (refer to Figure 9The shortest distance in (A) is shown in Figure 1. Distance A1 is the shortest distance between the first conductor pattern portion 481 and the outer peripheral surface 43 of the mounting substrate 4 in the first direction D11. Distance A2 is the shortest distance between the second conductor pattern portion 482 and the outer peripheral surface 43 of the mounting substrate 4 in the first direction D11. Distance A3 is the shortest distance between the third conductor pattern portion 483 and the outer peripheral surface 43 of the mounting substrate 4 in the first direction D11. Distance A4 is the shortest distance between the fourth conductor pattern portion 484 and the outer peripheral surface 43 of the mounting substrate 4 in the first direction D11. Therefore, the high-frequency module 100 satisfies the conditions: distance A0 > distance A1, distance A0 > distance A2, distance A0 > distance A3, and distance A0 > distance A4. Distances A1, A2, A3, and A4 are identical, but are not limited to this. They may be different values ​​as long as the above conditions are met. In the high-frequency module 100, the second conductor portion 62 of the metal electrode layer 6 extends from the outer edge 430 of the first main surface 41 of the mounting substrate 4 to the outer edge 432 of the second main surface 42 of the mounting substrate 4 (see Figure 6 and Figure 7 Therefore, the distances A1, A2, A3, and A4 between each of the first conductor pattern portion 481, the second conductor pattern portion 482, the third conductor pattern portion 483, and the fourth conductor pattern portion 484 and the outer peripheral surface 43 of the mounting substrate 4 are the same as the shortest distance between each of the first conductor pattern portion 481, the second conductor pattern portion 482, the third conductor pattern portion 483, and the fourth conductor pattern portion 484 and the metal electrode layer 6 in the first direction D11. Furthermore, in the high-frequency module 100, the shortest distance A0 between the third signal terminal 103 and the outer peripheral surface 43 of the mounting substrate 4 in the first direction D11 is the same as the shortest distance between the third signal terminal 103 and the metal electrode layer 6 in the first direction D11.

[0122] In the high-frequency module 100, the shortest distance W32 (see Figure 4 ) and the distance B0 between the third signal terminal 103 and the outer peripheral surface 43 of the mounting substrate 4 in the second direction D12 (refer to Figure 9 E) is the same. The distance B0 is the shortest distance between the third signal terminal 103 and the outer peripheral surface 43 of the mounting substrate 4 in the second direction D12. In addition, in the high-frequency module 100, the shortest distance W12 (see Figure 4 ) is the distance B1 (refer to Figure 9 D), distance B2 (refer to Figure 9 C), distance B3 (refer to Figure 9 B) and distance B4 (refer to Figure 9The shortest distance in A). Distance B1 is the shortest distance between the first conductor pattern portion 481 and the outer peripheral surface 43 of the mounting substrate 4 in the second direction D12. Distance B2 is the shortest distance between the second conductor pattern portion 482 and the outer peripheral surface 43 of the mounting substrate 4 in the second direction D12. Distance B3 is the shortest distance between the third conductor pattern portion 483 and the outer peripheral surface 43 of the mounting substrate 4 in the second direction D12. Distance B4 is the shortest distance between the fourth conductor pattern portion 484 and the outer peripheral surface 43 of the mounting substrate 4 in the second direction D12. Therefore, the high-frequency module 100 satisfies the conditions: distance B0 > distance B1, distance B0 > distance B2, distance B0 > distance B3, and distance B0 > distance B4. Distances B1, B2, B3, and B4 are equal, but are not limited to this. They may be different values ​​as long as the above conditions are met. In the high-frequency module 100, the second conductor portion 62 of the metal electrode layer 6 extends from the outer edge 430 of the first main surface 41 of the mounting substrate 4 to the outer edge 432 of the second main surface 42 of the mounting substrate 4 (see Figure 6 and Figure 7 Therefore, the distances B1, B2, B3, and B4 between each of the first, second, third, and fourth conductor pattern portions 481, 482, 483, and 484 and the outer peripheral surface 43 of the mounting substrate 4 are the same as the shortest distances between the first, second, third, and fourth conductor pattern portions 481, 482, 483, and 484 and the metal electrode layer 6 in the second direction D12. Furthermore, in the high-frequency module 100, the shortest distance B0 between the third signal terminal 103 and the outer peripheral surface 43 of the mounting substrate 4 in the second direction D12 is the same as the shortest distance between the third signal terminal 103 and the metal electrode layer 6 in the second direction D12.

[0123] In high-frequency module 100, shortest distance W31 and shortest distance W32 are the same value, but this is not limiting. Shortest distance W31 and shortest distance W32 may also be different. If shortest distance W31 and shortest distance W32 are different, the shortest distance between outer peripheral surface 43 of mounting substrate 4 and third signal terminal 103 connected to circuit element (second inductor L22) is the smaller of shortest distance W31 and shortest distance W32.

[0124] (3) Effect

[0125] (3.1) High-frequency module

[0126] A high-frequency module 100 according to Embodiment 1 includes a mounting substrate 4, a first signal terminal 101, a second signal terminal 102, a third signal terminal 103, a ground terminal 107, a first filter 1, and a second filter 2. The mounting substrate 4 has a first principal surface 41 and a second principal surface 42 that face each other. The first signal terminal 101, the second signal terminal 102, the third signal terminal 103, and the ground terminal 107 are arranged on the second principal surface 42 of the mounting substrate 4. The first filter 1 is connected between the first signal terminal 101 and the second signal terminal 102. The first filter 1 is a hybrid filter 1 including an elastic wave filter 10, a plurality of first inductors L11, L12, and L13, and a plurality of first capacitors C11, C12, C13, and C14. The elastic wave filter 10 includes at least one elastic wave resonator 14. The second filter 2 is connected between the first signal terminal 101 and the third signal terminal 103. The second filter 2 includes a plurality of second inductors L21 and L22 and a plurality of second capacitors C21, C22, and C23. The passband width of the hybrid filter 1 is greater than the passband width of the elastic wave resonator 14. The elastic wave filter 10 is mounted on the first principal surface 41 of the mounting substrate 4. A plurality of first inductors L11, L12, and L13, a plurality of first capacitors C11, C12, C13, and C14, a plurality of second inductors L21 and L22, and a plurality of second capacitors C21, C22, and C23 are arranged on the mounting substrate 4. The high-frequency module 100 further includes a resin layer 5 and a metal electrode layer 6. The resin layer 5 is arranged on the first principal surface 41 of the mounting substrate 4 and covers the elastic wave filter 10. The metal electrode layer 6 covers the resin layer 5 and the outer peripheral surface 43 of the mounting substrate 4. The metal electrode layer 6 is connected to the ground terminal 107. At least one inductor (the second inductor L22) among the plurality of inductors including the plurality of first inductors L11, L12, and L13 and the plurality of second inductors L21 and L22 is a circuit element including a conductor pattern portion 48 formed on the mounting substrate 4. The shortest distance between the outer peripheral surface 43 of the mounting substrate 4 and the third signal terminal 103 connected to the circuit element (the second inductor L22 ) is longer than the shortest distance between the outer peripheral surface 43 of the mounting substrate 4 and the circuit element.

[0127] High-frequency module 100 according to Embodiment 1 can suppress degradation in the characteristics of hybrid filter 1. More specifically, in high-frequency module 100, the shortest distance between outer peripheral surface 43 of mounting substrate 4 and third signal terminal 103 connected to the circuit element (second inductor L22) is longer than the shortest distance between outer peripheral surface 43 of mounting substrate 4 and the circuit element (second inductor L22). Consequently, high-frequency module 100 can suppress degradation in the characteristics of second filter 2 caused by the influence of parasitic capacitance generated between third signal terminal 103 connected to second inductor L22 of second filter 2 and metal electrode layer 6. Consequently, high-frequency module 100 can suppress degradation in the characteristics of hybrid filter 1, for example, which is connected to first signal terminal 101 along with second filter 2.

[0128] The hybrid filter 1 is designed, for example, so that the impedance of the hybrid filter 1 in the passband of the hybrid filter 1 is close to the characteristic impedance (for example, 50Ω). Figure 12 This is a Smith chart showing the frequency characteristics of the impedance of the second filter 2 in the high-frequency module 100 of the first embodiment and the second filter in the high-frequency module of the comparative example. In the high-frequency module of the comparative example, the shortest distance between the third signal terminal and the outer peripheral surface of the mounting substrate is shorter than the shortest distance between the second inductor and the outer peripheral surface of the mounting substrate, resulting in a parasitic capacitance of 0.2 pF between the third signal terminal and the metal electrode layer. Figure 12 The frequency characteristic represented by the solid line G1 in FIG. 1 shows the frequency characteristic of the impedance of the high-frequency module of the comparative example. In the high-frequency module of the comparative example, the impedance of the second filter 2 shifts from the position of the characteristic impedance on the Smith chart, and the capacitive reactance increases. In contrast, Figure 12 The frequency characteristic indicated by the dotted line G2 shows the frequency characteristic of the impedance when the generation of the parasitic capacitance between the third signal terminal 103 and the metal electrode layer 6 is suppressed by the structure of the high-frequency module 100 according to the first embodiment. Figure 12 It can be seen that the high-frequency module 100 of the first embodiment can suppress the impedance mismatch of the second filter 2. Therefore, the high-frequency module 100 of the first embodiment can suppress the degradation of the characteristics of the second filter 2, thereby suppressing the degradation of the characteristics of the hybrid filter 1.

[0129] in addition, Figure 13 : is a frequency characteristic diagram of the insertion loss of the second filter 2 in the high-frequency module 100 of the first embodiment and the second filter in the high-frequency module of the comparative example. Figure 13 It can be seen that the high-frequency module 100 of Embodiment 1 can reduce insertion loss compared to the high-frequency module of the comparative example. Therefore, the high-frequency module 100 of Embodiment 1 can suppress degradation of the characteristics of the second filter 2 , thereby suppressing degradation of the characteristics of the hybrid filter 1 .

[0130] The high-frequency module 100 also includes a fourth signal terminal 104 and a third filter 3. The fourth signal terminal 104 is disposed on the second principal surface 42 of the mounting substrate 4. The third filter 3 is connected between the first signal terminal 101 and the fourth signal terminal 104. When viewed from above in the thickness direction D1 of the mounting substrate 4, the mounting substrate 4 has a rectangular shape. The first signal terminal 101, the second signal terminal 102, the third signal terminal 103, and the fourth signal terminal 104 are disposed at the first corner 421, the second corner 422, the third corner 423, and the fourth corner 424 of the second principal surface 42 of the mounting substrate 4, respectively. As a result, the high-frequency module 100 can improve the isolation between the first filter 1 and the second filter 2, the isolation between the first filter 1 and the third filter 3, and the isolation between the second filter 2 and the third filter 3.

[0131] Furthermore, in the high-frequency module 100 of the first embodiment, the mounting substrate 4 includes a ground conductor 44. The ground conductor 44 is disposed between the first principal surface 41 and the second principal surface 42 of the mounting substrate 4 and is connected to the ground terminal 107. When viewed from above in the thickness direction D1 of the mounting substrate 4, the first signal terminal 101, the second signal terminal 102, the third signal terminal 103, and the fourth signal terminal 104 do not overlap with the ground conductor 44. Consequently, the high-frequency module 100 can reduce parasitic capacitance generated between each of the first signal terminal 101, the second signal terminal 102, the third signal terminal 103, and the fourth signal terminal 104 and the ground conductor 44.

[0132] (3.2) Communication device

[0133] The communication device 300 according to the first embodiment includes the high-frequency module 100 and the signal processing circuit 301 connected to the high-frequency module 100. Thus, the communication device 300 can suppress degradation of the characteristics of the hybrid filter 1.

[0134] (Implementation Method 2)

[0135] Reference Figure 14 、 Figure 15 as well as Figure 16 A to 16E describe a high-frequency module 100a according to a second embodiment. Regarding the high-frequency module 100a according to the second embodiment, the same components as those of the high-frequency module 100 according to the first embodiment are denoted by the same reference numerals and their descriptions are omitted. Furthermore, the circuit structure of the high-frequency module 100a is the same as that of the reference numeral 16E. Figure 1 The high-frequency module 100 of the first embodiment described above has the same circuit configuration.

[0136] In the high-frequency module 100a of the second embodiment, when viewed from the thickness direction D1 of the mounting substrate 4, the first signal terminal 101, the second signal terminal 102, the third signal terminal 103, the fourth signal terminal 104, and the plurality of ground terminals 107 are circular dots, which is different from the high-frequency module 100 of the first embodiment.

[0137] In the first direction D11, the shortest distance W31 between the outer edge 1030 of the third signal terminal 103 and the outer peripheral surface 43 of the mounting substrate 4 is longer than the shortest distance W11 between the outer peripheral surface 43 of the mounting substrate 4 and the second inductor L22. In the second direction D12, the shortest distance W32 between the outer edge 1030 of the third signal terminal 103 and the outer peripheral surface 43 of the mounting substrate 4 is longer than the shortest distance W12 between the outer peripheral surface 43 of the mounting substrate 4 and the second inductor L22.

[0138] In the high-frequency module 100a, the shortest distance W31 (see Figure 14 ) and the distance A0 between the third signal terminal 103 and the outer peripheral surface 43 of the mounting substrate 4 in the first direction D11 (refer to Figure 16 E) are the same. The high-frequency module 100a satisfies the conditions of distance A0>distance A1, distance A0>distance A2, distance A0>distance A3, and distance A0>distance A4. Distance A1, distance A2, distance A3, and distance A4 are the same value, but are not limited to this and may be different values. In the high-frequency module 100a, similar to the high-frequency module 100, the second conductor portion 62 of the metal electrode layer 6 (see Figure 6 and Figure 7 ) from the outer edge 430 of the first principal surface 41 of the mounting substrate 4 to the outer edge 432 of the second principal surface 42 of the mounting substrate 4. Therefore, the distances A1, A2, A3, and A4 between each of the first conductor pattern portion 481, the second conductor pattern portion 482, the third conductor pattern portion 483, and the fourth conductor pattern portion 484 and the outer peripheral surface 43 of the mounting substrate 4 are the same as the shortest distance between each of the first conductor pattern portion 481, the second conductor pattern portion 482, the third conductor pattern portion 483, and the fourth conductor pattern portion 484 and the metal electrode layer 6 in the first direction D11. Furthermore, in the high-frequency module 100a, the distance A0 between the third signal terminal 103 and the outer peripheral surface 43 of the mounting substrate 4 in the first direction D11 is the same as the shortest distance between the third signal terminal 103 and the metal electrode layer 6 in the first direction D11.

[0139] In the high-frequency module 100a, the shortest distance W32 (see Figure 14 ) and the distance B0 between the third signal terminal 103 and the outer peripheral surface 43 of the mounting substrate 4 in the second direction D12 (refer to Figure 16E) are the same. The high-frequency module 100a satisfies the conditions of distance B0>distance B1, distance B0>distance B2, distance B0>distance B3, and distance B0>distance B4. Distances B1, B2, B3, and B4 are the same value, but are not limited to this and may be different values. In the high-frequency module 100a, similar to the high-frequency module 100, the second conductor portion 62 of the metal electrode layer 6 (see Figure 6 and Figure 7 ) extends from the outer edge 430 of the first principal surface 41 of the mounting substrate 4 to the outer edge 432 of the second principal surface 42 of the mounting substrate 4. Therefore, the distances B1, B2, B3, and B4 between each of the first conductor pattern portion 481, the second conductor pattern portion 482, the third conductor pattern portion 483, and the fourth conductor pattern portion 484 and the outer peripheral surface 43 of the mounting substrate 4 are the same as the shortest distance between each of the first conductor pattern portion 481, the second conductor pattern portion 482, the third conductor pattern portion 483, and the fourth conductor pattern portion 484 and the metal electrode layer 6 in the second direction D12. Furthermore, in the high-frequency module 100a, the shortest distance B0 between the third signal terminal 103 and the outer peripheral surface 43 of the mounting substrate 4 in the second direction D12 is the same as the shortest distance between the third signal terminal 103 and the metal electrode layer 6 in the second direction D12.

[0140] In high-frequency module 100a, shortest distance W31 and shortest distance W32 are the same value, but this is not limiting. Shortest distance W31 and shortest distance W32 may also be different. If shortest distance W31 and shortest distance W32 are different, the shortest distance between outer peripheral surface 43 of mounting substrate 4 and third signal terminal 103 connected to circuit element (second inductor L22) is the smaller of shortest distance W31 and shortest distance W32.

[0141] Similar to high-frequency module 100 of embodiment 1, high-frequency module 100a of embodiment 2 can suppress degradation in the characteristics of hybrid filter 1. More specifically, in high-frequency module 100a, the shortest distance between outer peripheral surface 43 of mounting substrate 4 and third signal terminal 103 connected to the circuit element (second inductor L22) is longer than the shortest distance between outer peripheral surface 43 of mounting substrate 4 and the circuit element. Consequently, high-frequency module 100a can suppress degradation in the characteristics of second filter 2 caused by the influence of parasitic capacitance generated between third signal terminal 103 connected to second inductor L22 of second filter 2 and metal electrode layer 6. Consequently, high-frequency module 100a can suppress degradation in the characteristics of hybrid filter 1.

[0142] (Implementation 3)

[0143] Reference Figures 17 to 20, a high-frequency module 100b according to a third embodiment will be described. Regarding the high-frequency module 100b according to the third embodiment, the same components as those of the high-frequency module 100 according to the first embodiment are denoted by the same reference numerals and their descriptions are omitted. Furthermore, the circuit structure of the high-frequency module 100b is the same as that of the reference numeral 100. Figure 1 The high-frequency module 100 of the first embodiment described above has the same circuit configuration.

[0144] The high-frequency module 100b of the third embodiment differs from the high-frequency module 100 of the first embodiment in that the first inductor L12 of the hybrid filter 1 is a circuit element (here, an inner layer inductor) formed on the conductive pattern portion 48 formed on the mounting substrate 4. In high-frequency module 100b, the second inductor L22 and the first inductor L12, among the plurality of inductors including the plurality of first inductors L11, L12, and L13 and the plurality of second inductors L21 and L22, are each circuit elements formed on the conductive pattern portion 48 formed on the mounting substrate 4. In high-frequency module 100b, the shortest distance between the outer peripheral surface 43 of the mounting substrate 4 and the second signal terminal 102 connected to the first inductor L12 is longer than the shortest distance between the outer peripheral surface 43 of the mounting substrate 4 and the first inductor L12 (circuit element).

[0145] High-frequency module 100b according to Embodiment 3 can suppress degradation of the characteristics of hybrid filter 1. More specifically, in high-frequency module 100b, the shortest distance between outer peripheral surface 43 of mounting substrate 4 and second signal terminal 102 connected to circuit element (first inductor L12) is longer than the shortest distance between outer peripheral surface 43 of mounting substrate 4 and circuit element (first inductor L12). Consequently, high-frequency module 100b can suppress degradation of the characteristics of hybrid filter 1 caused by the influence of parasitic capacitance generated between second signal terminal 102 connected to first inductor L12 of hybrid filter 1 and metal electrode layer 6.

[0146] In the high-frequency module 100b, when viewed from above in the thickness direction D1 of the mounting substrate 4, the first inductor L12 does not overlap with any of the other first inductors L11 and L13, the plurality of second inductors L21 and L22, the first elastic wave filter 10, and the second elastic wave filter 30. Furthermore, when viewed from above in the thickness direction D1 of the mounting substrate 4, the first inductor L12 does not overlap with any of the plurality of first capacitors C11, C12, C13, and C14, or the plurality of second capacitors C21, C22, and C23. Furthermore, when viewed from above in the thickness direction D1 of the mounting substrate 4, the first inductor L12 does not overlap with any of the inductor L1, inductor L2, inductor L3, or capacitor C2. Furthermore, when viewed from above in the thickness direction D1 of the mounting substrate 4, the first inductor L12 does not overlap with any of the inductor L30, capacitor C31, or capacitor C32. Furthermore, when viewed from above in the thickness direction D1 of the mounting substrate 4, the first inductor L12 does not overlap with the ground conductor 44. Therefore, the high-frequency module 100b is less likely to block the magnetic field generated by the first inductor L12, which is an inner-layer inductor, and can suppress degradation of the characteristics of the first inductor L12. For example, the characteristics of the first inductor L12 include the Q (Quality Factor) value.

[0147] (Variation)

[0148] The above-mentioned embodiments 1 to 3 are only one of various embodiments of the present invention. As long as the object of the present invention can be achieved, various changes can be made to the above-mentioned embodiments 1 to 3 according to design and the like.

[0149] For example, multiplexer 110 constituting high-frequency module 100 is not limited to a triplexer and may be a duplexer including only two filters, namely, first filter 1 and second filter 2, among first filter 1, second filter 2, and third filter 3. Furthermore, multiplexer 110 may be a quadruplexer including a fourth filter in addition to first filter 1, second filter 2, and third filter 3.

[0150] Furthermore, the high-frequency modules 100 , 100 a , and 100 b include the electronic component E1 having the first elastic wave filter 10 and the second elastic wave filter 30 . However, the present invention is not limited thereto. The first elastic wave filter 10 and the second elastic wave filter 30 may be provided as separate electronic components.

[0151] In high-frequency modules 100, 100a, and 100b, the metal electrode layer 6 only needs to cover at least a portion of the resin layer 5 and at least a portion of the outer peripheral surface 43 of the mounting substrate 4. For example, the metal electrode layer 6 may have an opening that exposes a portion of the principal surface 51 of the resin layer 5. Alternatively, the metal electrode layer 6 may be in contact with the principal surface of the elastic wave filter 10 opposite the mounting substrate 4. Furthermore, the metal electrode layer 6 of high-frequency modules 100, 100a, and 100b does not necessarily need to reach the outer edge 432 of the second principal surface 42 of the mounting substrate 4.

[0152] Furthermore, in a circuit component including a conductor pattern portion 48, the conductor pattern portion 48 is not limited to being arranged within the mounting substrate 4, and may be arranged, for example, on the first principal surface 41 of the mounting substrate 4. Furthermore, in a circuit component including a plurality of conductor pattern portions 48, one of the plurality of conductor pattern portions 48 may be arranged on the first principal surface 41 of the mounting substrate 4, while the remaining conductor pattern portions 48 are arranged within the mounting substrate 4.

[0153] Furthermore, the circuit element comprising the conductive pattern portion 48 formed on the mounting substrate 4 is not limited to the second inductor L22 and the first inductor L12; for example, the first inductor L11 may also be used. Furthermore, in high-frequency modules 100, 100a, and 100b, a portion of the second inductor L22 overlaps a portion of the second capacitor C23. However, this is not limiting; the second inductor L22 and the second capacitor C23 do not necessarily overlap. Furthermore, in high-frequency module 100b, the second inductor L22 may be a chip inductor.

[0154] Furthermore, the plurality of first capacitors C11 , C12 , C13 , and C14 and the plurality of second capacitors C21 , C22 , and C23 are not limited to being built into the mounting substrate 4 , and may be chip capacitors.

[0155] In addition, the circuit structure of the high frequency modules 100, 100a, and 100b is not limited to Figure 1 example.

[0156] The first elastic wave filter 10 is not limited to a surface acoustic wave filter, but may also be a bulk acoustic wave filter. In a bulk acoustic wave filter, each of the plurality of elastic wave resonators 14 is a BAW (Bulk Acoustic Wave) resonator.

[0157] The second elastic wave filter 30 is not limited to being a surface acoustic wave filter, but may also be a bulk acoustic wave filter. In a bulk acoustic wave filter, each of the plurality of elastic wave resonators 34 is a BAW resonator.

[0158] The elastic wave filter 10 is not limited to a π-type filter, but may also be a ladder-type filter. Furthermore, the first elastic wave filter 10 only needs to include at least one elastic wave resonator 14 .

[0159] Alternatively, the first elastic wave filter 10 and the second elastic wave filter 30 may each be an elastic wave filter utilizing, for example, boundary elastic waves, plate waves, or the like.

[0160] The circuit structure of the high frequency circuit 200 is not limited to the above Figure 11 The high-frequency circuit 200 may also have a high-frequency front-end circuit that supports MIMO (Multi Input Multi Output) or ENDC (Evolved-Universal Terrestrial Radio Access New Radio Dual Connectivity) as a circuit structure.

[0161] (Way)

[0162] In this specification, the following aspects are disclosed.

[0163] A high-frequency module (100; 100a; 100b) of a first embodiment includes a mounting substrate (4), a first signal terminal (101), a second signal terminal (102), a third signal terminal (103), a ground terminal (107), a first filter (1), and a second filter (2). The mounting substrate (4) has a first main surface (41) and a second main surface (42) facing each other. The first signal terminal (101), the second signal terminal (102), the third signal terminal (103), and the ground terminal (107) are arranged on the second main surface (42) of the mounting substrate (4). The first filter (1) is connected between the first signal terminal (101) and the second signal terminal (102). The first filter (1) is a hybrid filter (1) including an elastic wave filter (10), a plurality of first inductors (L11, L12, L13), and a plurality of first capacitors (C11, C12, C13, C14). The elastic wave filter (10) has at least one elastic wave resonator (14). The second filter (2) is connected between the first signal terminal (101) and the third signal terminal (103). The second filter (2) includes a plurality of second inductors (L21, L22) and a plurality of second capacitors (C21, C22, C23). The passband width of the hybrid filter (1) is greater than the passband width of the elastic wave resonator (14). The elastic wave filter (10) is mounted on the first main surface (41) of the mounting substrate (4). A plurality of first inductors (L11, L12, L13), a plurality of first capacitors (C11, C12, C13, C14), a plurality of second inductors (L21, L22) and a plurality of second capacitors (C21, C22, C23) are arranged on the mounting substrate (4). The high-frequency module (100; 100a; 100b) further includes a resin layer (5) and a metal electrode layer (6). The resin layer (5) is arranged on the first main surface (41) of the mounting substrate (4) and covers at least a portion of the elastic wave filter (10). The metal electrode layer (6) covers at least a portion of the resin layer (5) and at least a portion of the outer peripheral surface (43) of the mounting substrate (4). The metal electrode layer (6) is connected to the ground terminal (107). At least one inductor (second inductor L22; first inductor L11; first inductor L12; first inductor L13) among a plurality of inductors including a plurality of first inductors (L11, L12, L13) and a plurality of second inductors (L21, L22) is a circuit element including a conductor pattern portion (48) formed in the mounting substrate (4). The shortest distance between the outer peripheral surface (43) of the mounting substrate (4) and the signal terminal connected to the circuit element, among the second signal terminal (102) and the third signal terminal (103), is longer than the shortest distance between the outer peripheral surface (43) of the mounting substrate (4) and the circuit element.

[0164] A high-frequency module (100; 100a; 100b) of the first embodiment can reduce the influence of parasitic capacitance generated between the outer peripheral surface (43) of the mounting substrate (4) and the signal terminals connected to the circuit elements in the second signal terminal (102) and the third signal terminal (103) and the metal electrode layer (6), and can suppress the degradation of the characteristics of the hybrid filter (1).

[0165] In the high-frequency module (100; 100a) of the second embodiment, in the first embodiment, at least one inductor is an inductor (second inductor L22) connected between the first signal terminal (101) and the third signal terminal (103).

[0166] The high-frequency module (100; 100a) of the second embodiment can suppress degradation of the characteristics of the second filter (2) caused by the influence of parasitic capacitance generated between the third signal terminal (103) connected to the circuit element (second inductor L22) and the metal electrode layer (6) because the shortest distance between the outer peripheral surface (43) of the mounting substrate (4) and the third signal terminal (103) is longer than the shortest distance between the outer peripheral surface (43) of the mounting substrate (4) and the circuit element (second inductor L22). As a result, the high-frequency module (100; 100a) of the second embodiment can suppress degradation of the characteristics of the hybrid filter (1) connected to the first signal terminal (101) together with the second filter (2).

[0167] In a third-mode high-frequency module (100b), in the first mode, at least one inductor is an inductor (first inductor L11; first inductor L12; first inductor L13) connected in series with an elastic wave filter (10) between a first signal terminal (101) and a second signal terminal (102).

[0168] The high-frequency module (100b) of the third embodiment can suppress degradation of the characteristics of the hybrid filter (1) caused by the influence of parasitic capacitance generated between the second signal terminal (102) connected to the circuit element (first inductor L11; L12) and the metal electrode layer (6) because the shortest distance between the outer peripheral surface (43) of the mounting substrate (4) and the second signal terminal (102) is longer than the shortest distance between the outer peripheral surface (43) of the mounting substrate (4) and the circuit element (first inductor L11; L12).

[0169] A high-frequency module (100; 100a; 100b) of a fourth embodiment comprises a plurality of circuit elements in any one of the first to third embodiments. In the high-frequency module (100; 100a; 100b) of the fourth embodiment, for each of the plurality of circuit elements, the shortest distance between the outer peripheral surface (43) of the mounting substrate (4) and a signal terminal (third signal terminal 103; second signal terminal 102) of the mounting substrate (4) connected to the circuit element among the second signal terminal (102) and the third signal terminal (103) is longer than the shortest distance between the outer peripheral surface (43) of the mounting substrate (4) and the circuit element (second inductor L22; first inductor L11; first inductor L12).

[0170] The high-frequency module (100; 100a; 100b) of the fourth embodiment can further suppress degradation of the characteristics of the hybrid filter (1).

[0171] In a fifth embodiment of a high-frequency module (100; 100b), in any one of the first to fourth embodiments, the mounting substrate (4) is rectangular in shape when viewed from above in the thickness direction (D1) of the mounting substrate (4). A signal terminal (third signal terminal 103; second signal terminal 102) connected to a circuit element is arranged at any one of a first corner (421), a second corner (422), a third corner (423), and a fourth corner (424) of a second main surface (42) of the mounting substrate (4). When viewed from above in the thickness direction (D1) of the mounting substrate (4), the signal terminal (third signal terminal 103; second signal terminal 102) connected to the circuit element is rectangular in shape. When viewed from above in the thickness direction (D1) of the mounting substrate (4), the outer edge (1030; 1020) of the signal terminal (third signal terminal 103; second signal terminal 102) includes a first side (1031; 1021) adjacent to the outer edge (432) of the second main surface (42) of the mounting substrate (4) in a first direction (D11) and a second side (1032; 1022) adjacent to the outer edge (432) of the second main surface (42) of the mounting substrate (4) in a second direction (D12) perpendicular to the first direction (D11). The shortest distance between the first side (1031; 1021) on the outer edge (1030; 1020) of the signal terminal (third signal terminal 103; second signal terminal 102) connected to the circuit element and the outer peripheral surface (43) of the mounting substrate (4) is longer than the shortest distance between the outer peripheral surface (43) of the mounting substrate (4) and the circuit element. The shortest distance between the second side (1032; 1022) on the outer edge (1030; 1020) of the signal terminal (103; 102) connected to the circuit element and the outer peripheral surface (43) of the mounting substrate (4) is longer than the shortest distance between the outer peripheral surface (43) of the mounting substrate (4) and the circuit element.

[0172] The high-frequency module (100; 100b) of the fifth embodiment can further suppress degradation of the characteristics of the hybrid filter (1).

[0173] In a sixth embodiment of a high-frequency module (100; 100a; 100b), in any one of the first to fifth embodiments, the mounting substrate (4) includes a grounding conductor portion (44). The grounding conductor portion (44) is disposed between a first principal surface (41) and a second principal surface (42) of the mounting substrate (4) and is connected to a grounding terminal (107). When viewed from above in a thickness direction (D1) of the mounting substrate (4), the circuit element does not overlap with the grounding conductor portion (44).

[0174] A high-frequency module (100; 100a; 100b) of a sixth embodiment can suppress generation of unnecessary parasitic capacitance between a circuit element (a second inductor L22) and a ground conductor portion (44).

[0175] In a high-frequency module (100; 100a; 100b) according to a seventh embodiment, in any one of the first to sixth embodiments, when viewed from above in the thickness direction (D1) of the mounting substrate (4), the circuit element (second inductor L22) does not overlap with any of the plurality of electronic components arranged on the first main surface (41) of the mounting substrate (4). The plurality of electronic components are two or more electronic components other than the circuit element in a group consisting of an elastic wave filter (10), a plurality of first inductors (L11, L12, L13), a plurality of first capacitors (C11, C12, C13, C14), a plurality of second inductors (L21, L22), and a plurality of second capacitors (C21, C22, C23).

[0176] The seventh embodiment of the high-frequency module (100; 100a; 100b) can suppress the degradation of the characteristics of the circuit element (second inductor L22) because the magnetic field generated in the circuit element (second inductor L22) is difficult to be blocked by multiple electronic components arranged on the first main surface (41) of the mounting substrate (4).

[0177] The high-frequency module (100; 100a; 100b) of the eighth embodiment, in any one of the first to fourth embodiments, further comprises a fourth signal terminal (104) and a third filter (3). The fourth signal terminal (104) is arranged on the second main surface (42) of the mounting substrate (4). The third filter (3) is connected between the first signal terminal (101) and the fourth signal terminal (104). When viewed from above in the thickness direction (D1) of the mounting substrate (4), the mounting substrate (4) is rectangular in shape. The first signal terminal (101), the second signal terminal (102), the third signal terminal (103) and the fourth signal terminal (104) are respectively arranged at the first corner (421), the second corner (422), the third corner (423) and the fourth corner (424) of the second main surface (42) of the mounting substrate (4).

[0178] The high-frequency module (100; 100a; 100b) of the eighth embodiment can respectively improve the isolation between the first filter (1) and the second filter (2), the isolation between the first filter (1) and the third filter (3), and the isolation between the second filter (2) and the third filter (3). As a result, the high-frequency module (100; 100a; 100b) of the eighth embodiment can further suppress the degradation of the characteristics of the hybrid filter (1).

[0179] In a ninth embodiment of the high-frequency module (100; 100a; 100b), in the eighth embodiment, the mounting substrate (4) includes a grounding conductor portion (44). The grounding conductor portion (44) is arranged between a first main surface (41) and a second main surface (42) of the mounting substrate (4) and is connected to a grounding terminal (107). When viewed from above in the thickness direction (D1) of the mounting substrate (4), the first signal terminal (101), the second signal terminal (102), the third signal terminal (103), and the fourth signal terminal (104) do not overlap with the grounding conductor portion (44).

[0180] A high-frequency module (100; 100a; 100b) of a ninth embodiment can reduce parasitic capacitance generated between each of a first signal terminal (101), a second signal terminal (102), a third signal terminal (103), and a fourth signal terminal (104) and a ground conductor (44).

[0181] In a high-frequency module (100; 100a; 100b) of a tenth embodiment, in any one of the first to ninth embodiments, a portion (second conductor portion 62) of the metal electrode layer (6) that covers at least a portion of the outer peripheral surface (43) of the mounting substrate (4) extends from an outer edge (430) of the first main surface (41) of the mounting substrate (4) to an outer edge (432) of the second main surface (42) of the mounting substrate (4).

[0182] The high-frequency module (100; 100a; 100b) of the tenth embodiment can improve the shielding properties of the metal electrode layer (6) and can suppress the degradation of the characteristics of the hybrid filter (1).

[0183] The communication device (300) of the eleventh embodiment comprises any one of the high-frequency modules (100; 100a; 100b) of the first to tenth embodiments and a signal processing circuit (301). The signal processing circuit (301) is connected to the high-frequency module (100; 100a; 100b).

[0184] The communication device (300) of the eleventh aspect can suppress degradation of the characteristics of the hybrid filter (1).

[0185] Description of Reference Numerals

[0186] 1…Hybrid filter (first filter); 10…Elastic wave filter (first elastic wave filter); 14…Elastic wave resonator; 140…First IDT electrode; 15…First input / output electrode; 16…Second input / output electrode; 17…Ground electrode; 18…Ground electrode; 150…Path (series arm path); 151…Path (parallel arm path); 152…Path (parallel arm path); 2…Second filter; 3…Third filter; 30…Second elastic wave filter; 34…Elastic wave resonator; 340…Second IDT electrode; 35…First input / output electrode; 36…Second input / output electrode; 37…Ground electrode; 38…Ground electrode; 350…Path (series arm path); 351…Path Path (parallel arm path); 352…path (parallel arm path); 353…path (parallel arm path); 354…path (parallel arm path); 355…path (parallel arm path); 4…mounting substrate; 41…first principal surface; 42…second principal surface; 421…first corner; 422…second corner; 423…third corner; 424…fourth corner; 43…outer peripheral surface; 430…outer edge; 432…outer edge; 44…ground conductor portion; 48…conductor pattern portion; 481…first conductor pattern portion; 482…second conductor pattern portion; 483…third conductor pattern portion; 484…fourth conductor pattern portion; 49…conducting conductor portion; 491…first conducting conductor portion; 492…second conducting conductor portion; 493…first conducting conductor portion; Three conductive conductors; 5…resin layer; 51…main surface; 53…outer peripheral surface; 6…metal electrode layer; 61…first conductor; 62…second conductor; 7…first switch; 70…common terminal; 71…selection terminal; 72…selection terminal; 8…second switch; 80…common terminal; 81…selection terminal; 82…selection terminal; 9…third switch; 90…common terminal; 91…selection terminal; 92…selection terminal; 100, 100a, 100b, 100c…high-frequency module; 101…first signal terminal; 102…second signal terminal; 1020…outer edge; 1021…first side; 1022…second side; 103…third signal terminal; 1030…outer edge; 1031…first side; 103 2…second side; 104…fourth signal terminal; 107…ground terminal; 110…multiplexer; 111…first transmit filter; 112…second transmit filter; 113…third transmit filter; 121…first receive filter; 122…second receive filter; 123…third receive filter; 131…first output matching circuit; 132…second output matching circuit; 133…third output matching circuit; 141…first input matching circuit; 142…second input matching circuit; 143…third input matching circuit; 161…first low-noise amplifier; 162…second low-noise amplifier; 163…third low-noise amplifier; 171…first power amplifier; 172…second power amplifier;173…third power amplifier; 200…high-frequency circuit; 300…communication device; 301…signal processing circuit; 302…RF signal processing circuit; 303…baseband signal processing circuit; 309…antenna; 1000…substrate; 1001…first principal surface; 1002…second principal surface; 1006…isolation layer; 1007…cover member; A0…distance; A1…distance; A2…distance; A3…distance; A4…distance; B0…distance; B1…distance; B2…distance; B3…distance; B4…distance; C2…capacitor; C11…first capacitor; C12…first capacitor; C13…first capacitor; C14…first capacitor; C21…second capacitor; C22…second capacitor; C23…second capacitor; C31…capacitor; C32…capacitor; D1…thickness direction; D11…first direction; D12…second direction; E1… Electronic component; F1…winding shaft; L1…inductor; L2…inductor; L3…inductor; L11…first inductor; L12…first inductor; L21…second inductor; L22…second inductor; L30…third inductor; S11…series-arm resonator; S31, S32, S33, S34, S35…series-arm resonators; P21, P22…parallel-arm resonators; P31, P32, P33, P34 , P35…parallel arm resonator; T0…antenna terminal; T11…first signal input terminal; T12…second signal input terminal; T13…third signal input terminal; T21…first signal output terminal; T22…second signal output terminal; T23…third signal output terminal; W11…shortest distance; W12…shortest distance; W21…shortest distance; W22…shortest distance; W31…shortest distance; W32…shortest distance. ;

Claims

1. A high-frequency module comprising: A mounting substrate having a first main surface and a second main surface facing each other; A first signal terminal, a second signal terminal, a third signal terminal and a ground terminal are arranged on the second main surface of the mounting substrate; a first filter connected between the first signal terminal and the second signal terminal, and comprising an elastic wave filter having at least one elastic wave resonator, a plurality of first inductors, and a plurality of first capacitors; as well as The second filter is connected between the first signal terminal and the third signal terminal and includes a plurality of second inductors and a plurality of second capacitors. The passband width of the hybrid filter is greater than the passband width of the elastic wave resonator. The elastic wave filter is mounted on the first main surface of the mounting substrate. The plurality of first inductors, the plurality of first capacitors, the plurality of second inductors, and the plurality of second capacitors are disposed on the mounting substrate. The above-mentioned high-frequency module also has: a resin layer disposed on the first main surface of the mounting substrate and covering at least a portion of the elastic wave filter; and a metal electrode layer covering at least a portion of the resin layer and at least a portion of the outer peripheral surface of the mounting substrate and connected to the ground terminal; At least one of the plurality of inductors including the plurality of first inductors and the plurality of second inductors is a circuit element including a conductor pattern portion formed on the mounting substrate. The shortest distance between the outer peripheral surface of the mounting substrate and the second signal terminal and the third signal terminal, whichever is connected to the circuit element, is longer than the shortest distance between the outer peripheral surface of the mounting substrate and the circuit element.

2. The high-frequency module according to claim 1, wherein The at least one inductor is an inductor connected between the first signal terminal and the third signal terminal.

3. The high-frequency module according to claim 1, wherein The at least one inductor is an inductor connected in series with the elastic wave filter between the first signal terminal and the second signal terminal.

4. The high-frequency module according to any one of claims 1 to 3, wherein having a plurality of the above-mentioned circuit elements, With respect to each of the plurality of circuit elements, The shortest distance between the outer peripheral surface of the mounting substrate and the second signal terminal and the third signal terminal, whichever is connected to the circuit element, is longer than the shortest distance between the outer peripheral surface of the mounting substrate and the circuit element.

5. The high-frequency module according to any one of claims 1 to 3, wherein When viewed from above in the thickness direction of the mounting substrate, the mounting substrate has a rectangular shape. The signal terminal connected to the circuit element is arranged at any one of the first corner, the second corner, the third corner, and the fourth corner of the second main surface of the mounting substrate. When viewed from above in the thickness direction of the mounting substrate, the signal terminal connected to the circuit element is rectangular in shape. When viewed from above in the thickness direction of the mounting substrate, the outer edge of the signal terminal includes: a first side adjacent to an outer edge of the second main surface of the mounting substrate in a first direction; and The second side is adjacent to the outer edge of the second main surface of the mounting substrate in a second direction perpendicular to the first direction. The shortest distance between the first side of the outer edge of the signal terminal connected to the circuit element and the outer peripheral surface of the mounting substrate is longer than the shortest distance between the outer peripheral surface of the mounting substrate and the circuit element. Furthermore, the shortest distance between the second side of the outer edge of the signal terminal connected to the circuit element and the outer peripheral surface of the mounting substrate is longer than the shortest distance between the outer peripheral surface of the mounting substrate and the circuit element.

6. The high-frequency module according to any one of claims 1 to 3, wherein The mounting substrate includes a ground conductor portion, the ground conductor portion being arranged between the first main surface and the second main surface and connected to the ground terminal. The circuit element does not overlap the ground conductor portion when viewed in plan from a thickness direction of the mounting substrate.

7. The high-frequency module according to any one of claims 1 to 3, wherein When viewed from above in the thickness direction of the mounting substrate, the circuit element does not overlap with any of the plurality of electronic components arranged on the first main surface of the mounting substrate. The plurality of electronic components are two or more electronic components other than the circuit element in the group consisting of the elastic wave filter, the plurality of first inductors, the plurality of first capacitors, the plurality of second inductors, and the plurality of second capacitors.

8. The high-frequency module according to any one of claims 1 to 3, wherein Also features: a fourth signal terminal disposed on the second main surface of the mounting substrate; and A third filter is connected between the first signal terminal and the fourth signal terminal. When viewed from above in the thickness direction of the mounting substrate, the mounting substrate has a rectangular shape. The first signal terminal, the second signal terminal, the third signal terminal, and the fourth signal terminal are respectively arranged at a first corner, a second corner, a third corner, and a fourth corner of the second main surface of the mounting substrate.

9. The high-frequency module according to claim 8, wherein The mounting substrate includes a ground conductor portion, the ground conductor portion being arranged between the first main surface and the second main surface and connected to the ground terminal. The first signal terminal, the second signal terminal, the third signal terminal, and the fourth signal terminal do not overlap with the ground conductor portion when viewed in plan from a thickness direction of the mounting substrate.

10. The high-frequency module according to any one of claims 1 to 3, wherein A portion of the metal electrode layer that covers at least a portion of the outer peripheral surface of the mounting substrate extends from an outer edge of the first main surface of the mounting substrate to an outer edge of the second main surface of the mounting substrate.

11. A communication device comprising: The high-frequency module according to any one of claims 1 to 10; and The signal processing circuit is connected to the high-frequency module.

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