Back cover and its processing method and electronic equipment
By setting a shielding part with a thickness of less than 4 micrometers between the electrochromic film layer and the light-transmitting cover plate, the problem of air bubbles during the bonding of the electrochromic film layer is solved, the production yield is improved, and the design of thinner and lighter electronic devices is promoted.
Patent Information
- Application Number
- CN202110999310.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2021-08-28
- Publication Date
- 2025-11-14
- Estimated Expiration
- 2041-08-28
AI Technical Summary
During the process of bonding the electrochromic film layer to the light-transmitting cover plate, air bubbles are easily generated, which leads to a decrease in the yield of electronic equipment production.
A shielding portion with a thickness of less than 4 micrometers is set between the electrochromic film layer and the light-transmitting cover plate to balance the shielding effect and surface flatness, reduce layer difference, eliminate air bubbles, and increase the difficulty of bonding.
By reducing the layer difference between the electrochromic film layer and the light-transmitting cover, bubbles are eliminated, production yield is improved, and it helps to achieve a thinner and lighter design for electronic devices.
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Figure CN115734528B_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of electronic product technology, and in particular to a back cover, its processing method, and an electronic device. Background Technology
[0002] In related technologies, electronic devices with electrochromic film back covers often have wiring areas, encapsulation areas, or uneven color-changing areas due to moisture, oxygen, etc., at the edges of the electrochromic film. To improve the aesthetics of the electronic device, a shielding part is usually provided on the electrochromic film or the light-transmitting cover plate of the electronic device to shield the edges of the electrochromic film and prevent the edges from being exposed. However, after providing the shielding part on the electrochromic film or the light-transmitting cover plate, air bubbles are easily generated between the light-transmitting cover plate and the electrochromic film during the process of attaching the electrochromic film to the light-transmitting cover plate, reducing the production yield of the electronic device. Summary of the Invention
[0003] Embodiments of this application provide a back cover for an electronic device, a processing method thereof, and an electronic device, which solve the problem of air bubbles easily forming between the cover plate and the electrochromic film layer during the process of attaching the electrochromic film layer to the cover plate.
[0004] To achieve the above objectives, the embodiments of this application adopt the following technical solutions:
[0005] A first aspect of this application provides an electronic device. The electronic device includes a back cover, which comprises: a light-transmitting cover plate, an electrochromic film layer, and a blocking portion. The electrochromic film layer and the light-transmitting cover plate are stacked together. The blocking portion is disposed between an edge portion of the electrochromic film layer and the light-transmitting cover plate, and the thickness of the blocking portion is less than 4 micrometers.
[0006] In the electronic device provided in this application, by setting the thickness of the shielding portion to less than 4 micrometers, the layer difference between the electrochromic film layer and the light-transmitting cover plate can be reduced while maintaining both the shielding effect and the surface flatness of the shielding portion. This eliminates air bubbles between the electrochromic film layer and the light-transmitting cover plate during the bonding process, significantly reducing the difficulty of bonding and improving production yield. Simultaneously, the overall thickness of the back cover is reduced, facilitating a thinner and lighter design for the electronic device.
[0007] In one possible implementation of the first aspect, the orthographic projection of the edge portion of the electrochromic film layer onto the light-transmitting cover plate lies within the orthographic projection of the shielding portion onto the light-transmitting cover plate. In this way, the shielding portion can effectively shield the edge portion of the electrochromic film layer, preventing the edge portion of the electrochromic film layer from being exposed and improving the aesthetic appearance of the electronic device.
[0008] In one possible implementation of the first aspect, the electrochromic film layer further has a central portion surrounded by edge portions, at least a portion of which, when projected onto the light-transmitting cover, does not overlap with the projected image of the blocking portion onto the light-transmitting cover. In this way, the back cover can display the color of the central portion, ensuring the aesthetic appeal of the back cover.
[0009] In one possible implementation of the first aspect, the thickness of the shielding portion is less than or equal to 1 micrometer. This further reduces the layer difference between the electrochromic film layer and the light-transmitting cover plate, thereby eliminating air bubbles between them when bonding the electrochromic film layer to the light-transmitting cover plate. This significantly reduces the difficulty of bonding the electrochromic film layer and the light-transmitting cover plate, improving production yield. Simultaneously, it further reduces the overall thickness of the back cover, making it more conducive to achieving a thinner and lighter design for electronic devices.
[0010] In one possible implementation of the first aspect, the thickness of the shielding portion is greater than or equal to 0.01 micrometers. Therefore, by further limiting the thickness of the shielding portion to greater than or equal to 0.01 micrometers, the shielding effect of the shielding portion can be ensured, preventing the edges of the electrochromic film layer from being exposed. Thus, while maintaining the shielding effect of the shielding portion, the layer difference between the electrochromic film layer and the light-transmitting cover plate is reduced, eliminating air bubbles between them. This significantly reduces the bonding difficulty between the electrochromic film layer and the light-transmitting cover plate, improving production yield. Simultaneously, reducing the overall thickness of the back cover facilitates the realization of a thinner and lighter design for electronic devices.
[0011] In one possible implementation of the first aspect, the light transmittance of the shielding portion is 0-50%. Thus, by setting the light transmittance of the shielding portion to 0-50%, the shielding effect of the shielding portion can be guaranteed, and the edge of the electrochromic film layer can be prevented from being exposed.
[0012] In one possible implementation of the first aspect, the shielding portion is a non-conductive layer. This prevents the shielding portion from interfering with the antenna signal of the electronic device, thus improving the stability of the antenna signal.
[0013] In one possible implementation of the first aspect, the resistance of the shielding part is not less than 5 megohms. This prevents the shielding part from interfering with the antenna signal of the electronic device, thus improving the stability of the antenna signal.
[0014] In one possible implementation of the first aspect, the shielding portion includes a light-shielding layer, which comprises one or more of the following: an indium layer, an indium alloy layer, and an interlaced layer formed by alternating and stacking at least two sublayers with different refractive indices. This allows for the reduction of the shielding portion's thickness while maintaining its shielding effect, and also enables a wider variety of colors for the light-shielding layer, facilitating better integration of the shielding portion with the back cover.
[0015] In one possible implementation of the first aspect, the interleaved layer is a first interleaved layer formed by alternating and stacking silicon dioxide layers and titanium dioxide layers, or a second interleaved layer formed by alternating and stacking silicon dioxide layers and niobium oxide layers, or a third interleaved layer formed by alternating and stacking silicon dioxide layers and tantalum oxide layers.
[0016] In one possible implementation of the first aspect, the thickness of both the indium layer and the indium alloy layer is 10 nm to 50 nm; the thickness of the interlaced layer is 200 nm to 1000 nm.
[0017] Therefore, by setting the thickness of the indium layer and indium alloy layer to 10 nanometers-55 nanometers, the shielding effect of the light-shielding layer can be guaranteed while preventing it from becoming conductive. This allows the light-shielding layer to be both opaque and non-conductive, ensuring not only its shielding effect but also preventing interference with the antenna signals of electronic devices. By setting the thickness of the interlaced layer to 200 nanometers-1000 nanometers, the shielding effect of the shielding part can be guaranteed while reducing its thickness. Furthermore, this allows for a wider variety of colors for the light-shielding layer, facilitating better integration between the shielding part and the back cover.
[0018] In one possible implementation of the first aspect, the blocking portion is disposed on the surface of the light-transmitting cover plate facing the electrochromic film layer. Since the surface of the light-transmitting cover plate is smooth and flat, the blocking portion can be easily disposed on the surface of the light-transmitting cover plate, reducing the processing difficulty of the blocking portion and improving processing efficiency and production yield.
[0019] In one possible implementation of the first aspect, the shielding part further includes: a base layer, which is disposed between the light-shielding layer and the light-transmitting cover plate. The base layer can increase the bonding force between the light-shielding layer and the light-transmitting cover plate, reduce the processing difficulty of the light-shielding layer, and effectively prevent the light-shielding layer from falling off.
[0020] In one possible implementation of the first aspect, the underlayer is a silicon-containing underlayer or a zirconium oxide-containing underlayer. This increases the adhesion between the light-shielding layer and the light-transmitting cover while reducing the thickness of the underlayer, thus minimizing its impact on the overall thickness of the shielding portion.
[0021] In one possible implementation of the first aspect, the thickness of the silicon-containing underlayer is 1 nm to 7 nm, and the thickness of the zirconium oxide-containing underlayer is 5 nm to 30 nm. This allows for increased adhesion between the light-shielding layer and the light-transmitting cover while reducing the thickness of the underlayer, thus minimizing its impact on the overall thickness of the shielding portion.
[0022] In one possible implementation of the first aspect, the shielding portion further includes a protective layer disposed on the side of the light-shielding layer away from the light-transmitting cover. The protective layer serves to protect the light-shielding layer and prevent it from being scratched or peeling off.
[0023] In one possible implementation of the first aspect, the protective layer is a niobium oxide layer or a titanium oxide layer. The niobium oxide and titanium oxide layers have high hardness, which can improve the protective effect of the protective layer.
[0024] In one possible implementation of the first aspect, the thickness of the protective layer is 10 nanometers to 35 nanometers. This allows for effective protection of the light-shielding layer and reduces the impact of the protective layer on the overall thickness of the shielding portion.
[0025] In one possible implementation of the first aspect, the back cover further includes a decorative layer disposed on the side of the electrochromic film layer away from the light-transmitting cover plate. This enhances the appearance of the back cover.
[0026] In one possible implementation of the first aspect, the decorative layer includes at least one of an optical film layer, a color layer, and a texture layer. This allows the back cover to have diverse light hues, colors, and texture variations, enhancing its aesthetic appeal.
[0027] In one possible implementation of the first aspect, the color difference ΔEab between the color of the shielding portion and the color of the decorative layer is 0-5. Therefore, by controlling the color difference ΔEab between the shielding portion and the decorative layer within 0-5, the color of the shielding portion and the color of the decorative layer can be made substantially the same, improving the aesthetic appearance of the back cover.
[0028] In one possible implementation of the first aspect, a circuit board is also included, located inside the back cover, with the electrochromic film layer electrically connected to the circuit board.
[0029] A second aspect of this application provides a back cover, which includes: a light-transmitting cover plate, an electrochromic film layer, and a blocking portion, wherein the electrochromic film layer and the light-transmitting cover plate are stacked together; the blocking portion is disposed between the edge portion of the electrochromic film layer and the light-transmitting cover plate, and the thickness of the blocking portion is less than 4 micrometers.
[0030] In the back cover provided in this application, by setting the thickness of the shielding portion to less than 4 micrometers, the layer difference between the electrochromic film layer and the light-transmitting cover plate can be reduced while maintaining both the shielding effect and the surface flatness of the shielding portion. This eliminates air bubbles between the electrochromic film layer and the light-transmitting cover plate during the bonding process, significantly reducing the difficulty of bonding and improving production yield. Simultaneously, reducing the overall thickness of the back cover facilitates the creation of thinner and lighter electronic devices.
[0031] In one possible implementation of the second aspect, the orthographic projection of the edge portion of the electrochromic film layer onto the light-transmitting cover plate lies within the orthographic projection of the shielding portion onto the light-transmitting cover plate. In this way, the shielding portion can effectively shield the edge portion of the electrochromic film layer, preventing the edge portion of the electrochromic film layer from being exposed and improving the aesthetic appearance of the electronic device.
[0032] In one possible implementation of the second aspect, the electrochromic film layer further has a central portion surrounded by edge portions, at least a portion of which, when projected onto the light-transmitting cover, does not overlap with the projected image of the blocking portion onto the light-transmitting cover. In this way, the back cover can display the color of the central portion, ensuring the aesthetic appeal of the back cover.
[0033] In one possible implementation of the second aspect, the thickness of the shielding portion is less than or equal to 1 micrometer. This further reduces the layer difference between the electrochromic film layer and the light-transmitting cover plate, thereby eliminating air bubbles between them when bonding the electrochromic film layer to the light-transmitting cover plate. This significantly reduces the bonding difficulty between the electrochromic film layer and the light-transmitting cover plate, improving production yield. Simultaneously, it further reduces the overall thickness of the back cover, making it more conducive to achieving a thinner and lighter design for electronic devices.
[0034] In one possible implementation of the second aspect, the thickness of the shielding portion is greater than or equal to 0.01 micrometers. Therefore, by further limiting the thickness of the shielding portion to greater than or equal to 0.01 micrometers, the shielding effect of the shielding portion can be ensured, preventing the edges of the electrochromic film layer from being exposed. Thus, while maintaining the shielding effect of the shielding portion, the layer difference between the electrochromic film layer and the light-transmitting cover plate is reduced, eliminating air bubbles between them. This significantly reduces the bonding difficulty of the electrochromic film layer and the light-transmitting cover plate, improving production yield. Simultaneously, reducing the overall thickness of the back cover facilitates the thinner and lighter design of electronic devices.
[0035] In one possible implementation of the second aspect, the light transmittance of the shielding portion is 0-50%. Thus, by setting the light transmittance of the shielding portion to 0-50%, the shielding effect of the shielding portion can be guaranteed, and the edge of the electrochromic film layer can be prevented from being exposed.
[0036] In one possible implementation of the second aspect, the shielding part is a non-conductive layer. This prevents the shielding part from interfering with the antenna signal of the electronic device, thus improving the stability of the antenna signal.
[0037] In one possible implementation of the second aspect, the resistance of the shielding part is not less than 5 megohms. This prevents the shielding part from interfering with the antenna signal of the electronic device, thus improving the stability of the antenna signal.
[0038] In one possible implementation of the second aspect, the shielding portion includes a light-shielding layer, which comprises one or more of the following: an indium layer, an indium alloy layer, and an interlaced layer formed by alternating and stacking at least two sublayers with different refractive indices. This allows for the reduction of the shielding portion's thickness while maintaining its shielding effect, and also enables a wider variety of colors for the light-shielding layer, facilitating better integration of the shielding portion with the back cover.
[0039] In one possible implementation of the second aspect, the interleaved layer is a first interleaved layer formed by alternating and stacking silicon dioxide layers and titanium dioxide layers, or a second interleaved layer formed by alternating and stacking silicon dioxide layers and niobium oxide layers, or a third interleaved layer formed by alternating and stacking silicon dioxide layers and tantalum oxide layers.
[0040] In one possible implementation of the second aspect, the thickness of both the indium layer and the indium alloy layer is 10 nm to 50 nm; the thickness of the interlaced layer is 200 nm to 1000 nm.
[0041] Therefore, by setting the thickness of the indium layer and indium alloy layer to 10 nanometers-55 nanometers, the shielding effect of the light-shielding layer can be guaranteed while preventing it from becoming conductive. This allows the light-shielding layer to be both opaque and non-conductive, ensuring not only its shielding effect but also preventing interference with the antenna signals of electronic devices. By setting the thickness of the interlaced layer to 200 nanometers-1000 nanometers, the shielding effect of the shielding part can be guaranteed while reducing its thickness. Furthermore, this allows for a wider variety of colors for the light-shielding layer, facilitating better integration between the shielding part and the back cover.
[0042] In one possible implementation of the second aspect, the blocking portion is disposed on the surface of the light-transmitting cover plate facing the electrochromic film layer. Since the surface of the light-transmitting cover plate is smooth and flat, the blocking portion can be easily disposed on the surface of the light-transmitting cover plate, reducing the processing difficulty of the blocking portion and improving processing efficiency and production yield.
[0043] In one possible implementation of the second aspect, the shielding part further includes: a base layer, which is disposed between the light-shielding layer and the light-transmitting cover plate. The base layer can increase the bonding force between the light-shielding layer and the light-transmitting cover plate, reduce the processing difficulty of the light-shielding layer, and effectively prevent the light-shielding layer from falling off.
[0044] In one possible implementation of the second aspect, the underlayer is a silicon-containing underlayer or a zirconium oxide-containing underlayer. This increases the adhesion between the light-shielding layer and the light-transmitting cover while reducing the thickness of the underlayer, thus minimizing its impact on the overall thickness of the shielding portion.
[0045] In one possible implementation of the second aspect, the thickness of the silicon-containing underlayer is 1 nm to 7 nm, and the thickness of the zirconium oxide-containing underlayer is 5 nm to 30 nm. This allows for increased adhesion between the light-shielding layer and the light-transmitting cover while reducing the thickness of the underlayer, thus minimizing its impact on the overall thickness of the shielding portion.
[0046] In one possible implementation of the second aspect, the shielding part further includes a protective layer, which is disposed on the side of the light-shielding layer away from the light-transmitting cover. The protective layer can protect the light-shielding layer and prevent it from being scratched or peeling off.
[0047] In one possible implementation of the second aspect, the protective layer is a niobium oxide layer or a titanium oxide layer. Niobium oxide and titanium oxide layers have high hardness, which can improve the protective effect of the protective layer.
[0048] In one possible implementation of the second aspect, the thickness of the protective layer is 10 nanometers to 35 nanometers. This allows for effective protection of the light-shielding layer and reduces the impact of the protective layer on the overall thickness of the shielding portion.
[0049] In one possible implementation of the second aspect, the back cover further includes a decorative layer disposed on the side of the electrochromic film layer away from the light-transmitting cover plate. This enhances the appearance of the back cover.
[0050] In one possible implementation of the second aspect, the decorative layer includes at least one of an optical film layer, a color layer, and a texture layer. This allows the back cover to have diverse light hues, colors, and texture variations, enhancing its aesthetic appeal.
[0051] In one possible implementation of the first aspect, the color difference ΔEab between the color of the shielding portion and the color of the decorative layer is 0-5. Therefore, by controlling the color difference ΔEab between the shielding portion and the decorative layer within 0-5, the color of the shielding portion and the color of the decorative layer can be made substantially the same, improving the aesthetic appearance of the back cover.
[0052] A third aspect of this application provides a screen, including: a light-transmitting cover plate, a display panel, and a blocking portion. The display panel and the light-transmitting cover plate are stacked; the blocking portion is disposed between the edge of the display panel and the light-transmitting cover plate, and the thickness of the blocking portion is less than 4 micrometers.
[0053] In the screen provided in this application, by setting the thickness of the shielding portion to less than 4 micrometers, the layer difference between the display panel and the light-transmitting cover can be reduced while maintaining both the shielding effect and the surface flatness of the shielding portion. This eliminates air bubbles between the display panel and the light-transmitting cover when bonding the display panel to the cover, significantly reducing the bonding difficulty and improving production yield. Simultaneously, the reduced overall thickness of the screen facilitates the creation of thinner and lighter electronic devices.
[0054] In one possible implementation of the third aspect, the orthographic projection of the edge of the electrochromic film layer onto the light-transmitting cover plate lies within the orthographic projection of the blocking portion onto the light-transmitting cover plate. In this way, the blocking portion can effectively block the edge of the electrochromic film layer, preventing the edge of the electrochromic film layer from being exposed and improving the aesthetic appearance of the electronic device.
[0055] In one possible implementation of the third aspect, the thickness of the shielding part is less than 1 micrometer.
[0056] In one possible implementation of the third aspect, the thickness of the shielding portion is greater than or equal to 0.01 micrometers.
[0057] A third aspect of this application provides a method for processing a back cover. The back cover includes a light-transmitting cover plate and an electrochromic film layer, wherein the electrochromic film layer and the light-transmitting cover plate are stacked together. The processing method includes forming a shielding portion between the edge portion of the light-transmitting cover plate and the electrochromic film layer using a vacuum coating or electroplating process. The thickness of the shielding portion is less than 4 micrometers.
[0058] In the back cover processing method provided in this application, the shielding part is formed by vacuum coating or electroplating, and the thickness of the shielding part is less than 4 micrometers. This satisfies the requirements for shielding effect and surface flatness of the shielding part, reduces the layer difference between the electrochromic film layer and the light-transmitting cover plate, and eliminates air bubbles between the electrochromic film layer and the light-transmitting cover plate when bonding the electrochromic film layer to the light-transmitting cover plate. This greatly reduces the bonding difficulty between the electrochromic film layer and the light-transmitting cover plate and improves the production yield. At the same time, the overall thickness of the back cover is reduced, which is conducive to realizing the thinner and lighter design of electronic devices.
[0059] In one possible implementation of the third aspect, the area on the light-transmitting cover plate opposite to the edge portion of the electrochromic film layer is a first region, and forming a shielding portion between the light-transmitting cover plate and the edge portion includes: forming a shielding portion on the surface of the first region facing the edge portion, and positioning the shielding portion between the first region and the edge portion.
[0060] In one possible implementation of the third aspect, the electrochromic film layer further has a central portion surrounded by an edge portion, and the area on the light-transmitting cover plate opposite the central portion is a second region. Before forming the shielding portion on the surface of the first region facing the edge portion, the method further includes: forming a removable film layer on the surface of the second region facing the central portion; after forming the shielding portion on the surface of the first region facing the edge portion, the method further includes: removing the removable film layer. This improves the accuracy of the shielding portion deposition position, reduces the deposition difficulty, and helps improve production yield. Attached Figure Description
[0061] Figure 1 Schematic diagrams of the structure of electronic devices provided for some embodiments of this application;
[0062] Figure 2 for Figure 1 Exploded view of the electronic device shown;
[0063] Figure 3 Perspective view of the back cover provided for some embodiments of this application;
[0064] Figure 4 For along Figure 3 Sectional view of line AA in the middle;
[0065] Figure 5 Cross-sectional views of electrochromic film layers provided for some embodiments of this application;
[0066] Figure 6 Cross-sectional views of electrochromic film layers provided for other embodiments of this application;
[0067] Figure 7a A cross-sectional view of an electrochromic film layer provided for some other embodiments of this application, wherein the electrochromic film layer is in a state without an applied electric field;
[0068] Figure 7b A cross-sectional view of an electrochromic film layer provided for some other embodiments of this application, wherein the electrochromic film layer is in a state after an electric field is applied;
[0069] Figure 8 Top view of an electrochromic film layer provided for some embodiments of this application;
[0070] Figure 9a For along Figure 8 Sectional view of the middle BB line;
[0071] Figure 9b for Figure 9a Enlarged view shown in section A;
[0072] Figure 10 A top view of a light-transmitting cover plate of a back cover provided for some embodiments of this application;
[0073] Figure 11a For along Figure 10 A cross-sectional view of the CC line;
[0074] Figure 11b for Figure 11a Enlarged view shown in section B;
[0075] Figure 12a A cross-sectional view of a light-transmitting cover plate of a back cover provided for other embodiments of this application;
[0076] Figure 12b for Figure 12a Enlarged view circled in section C;
[0077] Figure 13 Schematic diagram of the shielding portion provided for some embodiments of this application;
[0078] Figure 14 Schematic diagram of the shielding portion provided for other embodiments of this application;
[0079] Figure 15 A schematic diagram of the shielding portion provided for further embodiments of this application;
[0080] Figure 16 Cross-sectional view of the back cover provided for other embodiments of this application;
[0081] Figure 17 Some of the back cover processing methods provided in this application are flowcharts.
[0082] Figure label:
[0083] 100. Electronic devices;
[0084] 1. Screen; 11. Front cover; 12. Display panel;
[0085] 2. Back shell; 20. Back cover; 21. Light-transmitting cover plate; 22. Electrochromic film layer; 221. First transparent conductive layer; 222. Electrochromic layer; 222a. Liquid crystal; 222b. Substrate; 223. Electrolyte layer; 224. Ion storage layer; 225. Second transparent conductive layer; 226. First substrate layer; 227. Second substrate layer; 22a. Edge portion; 22b. Middle portion; 23. Frame; 24. Middle plate; 25. Decorative layer; 26. Shielding portion; 26a. Light-shielding layer; 26b. Undercoat layer; 26c. Protective layer; 27. Optical transparent adhesive;
[0086] 3. Circuit board; 31. Main circuit board; 32. Sub-circuit board; 4. Connection structure. Detailed Implementation
[0087] In the embodiments of this application, the terms "first," "second," "third," and "fourth" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Thus, a feature defined with "first," "second," "third," and "fourth" may explicitly or implicitly include one or more of that feature.
[0088] In embodiments of this application, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes that element.
[0089] In the embodiments of this application, "and / or" is merely a description of the relationship between related objects, indicating that three relationships can exist. For example, A and / or B can represent: A existing alone, A and B existing simultaneously, or B existing alone. Additionally, the character " / " in this document generally indicates that the preceding and following related objects have an "or" relationship.
[0090] This application provides an electronic device including an electrochromic back cover. Specifically, this application provides an electronic device in which a shielding portion with a thickness of less than 4 micrometers is provided between the edge of the light-transmitting cover and the electrochromic film layer. This reduces the layer difference between the electrochromic film layer and the light-transmitting cover while ensuring both the shielding effect and the surface flatness of the shielding portion. Consequently, when the electrochromic film layer is bonded to the light-transmitting cover, air bubbles between the electrochromic film layer and the light-transmitting cover can be eliminated, greatly reducing the bonding difficulty between the electrochromic film layer and the light-transmitting cover and improving the production yield.
[0091] Specifically, the electronic device 100 includes, but is not limited to, mobile phones, tablet personal computers, laptop computers, personal digital assistants (PDAs), personal computers, laptops, in-vehicle devices, and wearable devices. This application does not impose any special limitations on the specific form of the aforementioned electronic device 100.
[0092] Please see Figure 1 and Figure 2 , Figure 1 This is a schematic diagram of the structure of an electronic device 100 provided in some embodiments of this application. Figure 2 for Figure 1 An exploded view of the electronic device 100 is shown. In this embodiment, the electronic device 100 is a tablet phone. Specifically, the electronic device 100 includes a screen 1, a circuit board, and a back cover 2.
[0093] Understandable Figure 1 and Figure 2 The accompanying drawings below only schematically illustrate some components included in the electronic device 100; the actual shape, size, location, and construction of these components are not subject to change. Figure 1 and Figure 2 As defined in the accompanying drawings below. In some other embodiments, the electronic device 100 may also not include the screen 1.
[0094] Screen 1 is used to display images, videos, etc. Screen 1 may include a light-transmitting cover and a display panel 12. The light-transmitting cover in screen 1 can be... Figure 2The front cover 11 is shown in the diagram. The front cover 11 is stacked and fixedly connected to the display panel 12. The front cover 11 mainly serves to protect the display panel 12 and prevent dust. The material of the front cover 11 includes, but is not limited to, glass. The display panel 12 can be a flexible display panel or a rigid display panel. For example, the display panel 12 can be an organic light-emitting diode (OLED) display panel, an active-matrix organic light-emitting diode (AMOLED) display panel, a mini organic light-emitting diode (MLED) display panel, a microorganic light-emitting diode (Microorganic Light-emitting Diode) display panel, a quantum dot light-emitting diode (QLED) display panel, or a liquid crystal display (LCD).
[0095] The "back cover 2" is described below. The back cover 2 is used to protect the internal electronic components of the electronic device 100. The back cover 2 includes a frame 23 and a back cover 20.
[0096] The back cover 20 may include a light-transmitting cover plate 21, an electrochromic film layer 22, a blocking portion 26, and a frame 23. The light-transmitting cover plate 21 is located on the side of the display panel 12 away from the front cover plate 11, and is stacked with the front cover plate 11 and the display panel 12. The frame 23 is located between the light-transmitting cover plate 21 and the front cover plate 11, and the frame 23 is fixed to the light-transmitting cover plate 21. The light-transmitting cover plate 21 may be made of glass or a transparent resin material with a certain degree of hardness.
[0097] For example, the frame 23 can be fixedly connected to the light-transmitting cover 21 by adhesive. The frame 23 can also be integrally formed with the light-transmitting cover 21, i.e., the frame 23 and the light-transmitting cover 21 are a single structure. The front cover 11 is fixed to the frame 23. In some embodiments, the front cover 11 can be fixed to the frame 23 by adhesive. The front cover 11, the light-transmitting cover 21, and the frame 23 form an internal receiving space for the electronic device 100, which accommodates the display panel 12, circuit board 3, etc.
[0098] Please see Figure 3 and Figure 4 , Figure 3This is a perspective view of the back cover 20 of some embodiments of this application. Figure 4 It is along Figure 3 The cross-sectional view along line AA shows that the electrochromic film layer 22 and the light-transmitting cover plate 21 are stacked. Specifically, the electrochromic film layer 22 can be located on the side of the light-transmitting cover plate 21 facing the screen 1. For example, the electrochromic film layer 22 can be bonded to the inner surface of the light-transmitting cover plate 21 using optically clear adhesive (OCA) 27. Here, the inner surface of the light-transmitting cover plate 21 refers to the surface of the light-transmitting cover plate 21 that is close to the internal space of the electronic device 100.
[0099] It should be noted that Optical Transparent Adhesive 27 (OCA) is a special adhesive used for bonding transparent optical components (such as lenses). It is colorless and transparent, has a light transmittance of over 90%, good bonding strength, can be cured at room temperature or medium temperature, and has low curing shrinkage. In some embodiments, Optical Transparent Adhesive 27 is a special substrate-free double-sided adhesive with an optically transparent layer.
[0100] The electrochromic film layer 22 can undergo stable and reversible color changes under the influence of an applied electric field, manifesting as reversible changes in color and transparency. In some embodiments, the color of the electrochromic film layer 22 can be changed by altering the voltage applied to it, resulting in different color appearances. In other embodiments, the transparency of the electrochromic film layer 22 can be changed by altering the voltage applied to it, allowing it to exhibit different appearances such as a transparent state and a frosted state (colored state).
[0101] Please see Figure 5 , Figure 5 This is a cross-sectional view of the electrochromic film layer 22 of the back cover 20 according to an embodiment of this application. The electrochromic film layer 22 may include a first transparent conductive layer 221, an electrochromic layer 222, an electrolyte layer 223, an ion storage layer 224, and a second transparent conductive layer 225 stacked together.
[0102] When the electrochromic film layer 22 is in operation, a certain voltage is applied between the two transparent conductive layers (i.e., the first transparent conductive layer 221 and the second transparent conductive layer 222). Under this voltage, the material of the electrochromic layer 222 undergoes a redox reaction, resulting in a color change. The electrolyte layer 223 serves to conduct electricity. The ion storage layer 224 stores corresponding counterions during the redox reaction of the electrochromic layer 22, maintaining the charge balance of the entire system. The ion storage layer 224 can also be an electrochromic material with the opposite color-changing properties to the preceding electrochromic layer 222, thus achieving color superposition or complementarity. For example, when the electrochromic layer 22 uses an anodic oxidation color-changing material, the ion storage layer 224 can use a cathodic reduction color-changing material.
[0103] The first transparent conductive layer 221 and the second transparent conductive layer 225 can be indium tin oxide (ITO), tin oxide (SnO2), and antimony tin oxide (ATO), but are not limited to these.
[0104] The electrochromic layer 222 is the core layer of the electrochromic film layer 22 and also the layer where the color-changing reaction occurs. The materials of the electrochromic layer 222 can be classified into inorganic electrochromic materials and organic electrochromic materials. Inorganic electrochromic materials can be tungsten trioxide (WO3) or nickel oxide (NiO). Organic electrochromic materials mainly include polythiophene compounds and their derivatives, violetin compounds, tetrathiofulvalene compounds, and metal phthalocyanine compounds.
[0105] The electrolyte layer 223 is composed of special conductive materials, such as liquid electrolyte materials containing solutions of lithium perchlorate, sodium perchlorate, etc., or it can be a solid electrolyte material.
[0106] The electrochromic film layer 22 in this embodiment can undergo stable and reversible color changes under the action of an external electric field. The electrochromic film layer 22 is technically mature and low in cost.
[0107] Furthermore, Figure 6 This is a cross-sectional view of another electrochromic film layer 22 of the back cover 20 in this embodiment of the application. Figure 6 The electrochromic film layer 22 shown includes, in addition to Figure 5In addition to the first transparent conductive layer 221, electrochromic layer 222, electrolyte layer 223, ion storage layer 224, and second transparent conductive layer 225, the electrochromic film layer 22 also includes a first substrate layer 226 and a second substrate layer 227. The first substrate layer 226 is disposed on the side of the first transparent conductive layer 221 away from the electrochromic layer 222, and the second substrate layer 227 is disposed on the side of the second transparent conductive layer 225 away from the electrochromic layer 222. The first substrate layer 226 and the second substrate layer 227 can be used to support and protect the electrochromic layer 222. The first substrate layer 226 and the second substrate layer 227 can be made of glass or plastic. Therefore, by providing the first substrate layer 226 and the second substrate layer 227, the electrochromic layer 222 can be supported and protected, improving the structural stability and reliability of the electrochromic layer 222, which is beneficial for extending the service life of the electrochromic film layer 22 and reducing the cost of use.
[0108] When a certain voltage is applied between the first transparent conductive layer 221 and the second transparent conductive layer 225, the material of the electrochromic layer 222 undergoes a redox reaction under the voltage, resulting in a color change. This causes the electrochromic film layer 22 to switch between a transparent state and a colored state. It can be understood that the color of the electrochromic layer 222 can be changed by altering the material of the electrochromic layer 222 and the voltage between the first transparent conductive layer 221 and the second transparent conductive layer 225, thus making the appearance of the back cover 20 more diverse.
[0109] Please see Figure 7a and Figure 7b , Figure 7a and Figure 7b This is a cross-sectional view of another electrochromic film layer 22 of the back cover 20 according to an embodiment of this application. Figure 7a This represents the state of the electrochromic film layer 22 when no electric field is applied. Figure 7b This represents the state when an electric field is applied to the electrochromic film layer 22. In this embodiment, the electrochromic film layer 22 includes a first transparent conductive layer 221, an electrochromic layer 222, and a second transparent conductive layer 225. The electrochromic layer 222 is a polymer dispersed liquid crystal (PDLC) dimming film. The electrochromic layer 222 includes a polymer dispersed liquid crystal (PDLC) and an organic solid polymer matrix. Specifically, the liquid crystal 222a is dispersed in micron-sized droplets within the organic solid polymer matrix 222b (polymer network structure).
[0110] like Figure 7aAs shown, without an applied electric field, the liquid crystal 222a is freely oriented, and its refractive index does not match that of the substrate 222b. When light passes through the substrate 222b, it is strongly scattered by the liquid crystal 222a, resulting in an opaque milky white or semi-transparent state. This gives the electrochromic film layer 22 a certain degree of haze (i.e., blurring rate), causing it to exhibit a colored state (also known as a frosted state). Applying an electric field can adjust the optical axis orientation of the liquid crystal 222a. When the refractive index of the liquid crystal 222a matches that of the substrate 222b, light passing through the substrate 222b will not be scattered by the liquid crystal 222a, resulting in a transparent state (e.g., as shown in the image). Figure 7b (As shown). Of course, when the electric field disappears, the liquid crystal 222a returns to its original free orientation state.
[0111] This allows the back cover 20 to present different appearances, achieving a color-changing effect and improving its aesthetic appeal.
[0112] In this embodiment, a decorative layer can be provided on the side of the electrochromic film layer 22 away from the light-transmitting cover plate 21. This allows the decorative layer 25 to be visible from outside the light-transmitting cover plate 21 when the electrochromic layer 222 is in a transparent state, thus giving the back cover 20 the appearance of the decorative layer 25. Optionally, the decorative layer 25 includes at least one of an optical film layer, a color layer, and a texture layer. This allows the back cover 20 to have diverse light hues, colors, and texture variations, enhancing its aesthetic appeal.
[0113] Please see Figure 8 , Figure 8 This is a top view of the electrochromic film layer 22 according to an embodiment of this application. The electrochromic film layer 22 is sensitive to moisture and oxygen. To improve the sealing performance of the electrochromic film layer 22, in some embodiments, the edge portion 22a of the electrochromic film layer 22 is provided with an encapsulation area. In some embodiments, the edge portion 22a of the electrochromic film layer 22 exhibits uneven color due to the influence of moisture and oxygen, or the edge portion of the electrochromic film layer 22 cannot exhibit a color-changing effect due to the presence of a wiring area. The electrochromic film layer 22 also has a middle portion 22b surrounded by the edge portion 22a, which can switch between a transparent state and a colored state.
[0114] Please see Figure 9a and Figure 9b In some embodiments, in order to shield the edge portion 22a of the electrochromic film layer 22 and prevent the edge portion 22a from being exposed, a shielding portion 26 is provided between the light-transmitting cover plate 21 and the edge portion 22a of the electrochromic film layer 22. In this way, the edge portion 22a can be shielded by the shielding portion 26 to improve the appearance of the back cover 20.
[0115] In some embodiments, the orthographic projection of the edge portion 22a onto the light-transmitting cover plate 21 is located at the orthographic projection of the blocking portion 26 onto the light-transmitting cover plate 21. In this way, the blocking portion 26 can completely cover the edge portion 22a, improving the blocking effect of the blocking portion 26, preventing the edge portion 22a from being exposed, and further enhancing the aesthetic appearance of the back cover 20.
[0116] In some embodiments, at least a portion of the orthographic projection of the electrochromic area 22b onto the light-transmitting cover plate 21 does not overlap with the orthographic projection of the blocking portion 26 onto the light-transmitting cover plate 21. That is, at least a portion of the electrochromic area 22b is not blocked by the blocking portion 26. In this way, the back cover 20 can display the color of the electrochromic area 22b, ensuring the appearance of the back cover 20.
[0117] Understandably, due to processing errors, during the actual processing, the blocking part 26 may block part of the electrochromic area 22b, so that part of the orthographic projection of the electrochromic area 22b on the light-transmitting cover plate 21 does not overlap with the orthographic projection of the blocking part 26 on the light-transmitting cover plate 21.
[0118] In some embodiments, refer to Figure 8 and Figure 9a Screen printing ink is used to form a masking portion 26 on the electrochromic film layer 22 to mask the edge portion 22a. Alternatively, in some other embodiments, refer to... Figure 10 , Figure 11a and Figure 11b Ink is transferred onto the inner surface of the light-transmitting cover 21 to form a shielding portion 26, which is used to shield the edge portion 22a. However, due to the relatively large ink particles, in order to balance the shielding effect and the surface smoothness of the shielding portion 26, the thickness of the shielding portion 26 formed by the transfer ink or screen printing ink is usually relatively large. For example, Figure 9a The thickness of the masking portion 26 formed by screen printing ink on the electrochromic film layer shown is 4 micrometers to 6 micrometers. Figure 11a The thickness of the shielding portion 26 formed by transferring ink on the inner surface of the light-transmitting cover plate 21, as shown, is 6 micrometers to 8 micrometers. When the shielding portion 26 is disposed on the light-transmitting cover plate 21, its thickness refers to its dimension in the direction perpendicular to the light-transmitting cover plate 21. When the shielding portion 26 is disposed on the electrochromic film layer, its thickness refers to its dimension in the direction perpendicular to the electrochromic film layer.
[0119] Because the shielding portion 26 is relatively thick, there is a large layer difference between the electrochromic film layer 22 and the light-transmitting cover plate 21, resulting in a large step between them. When using optically transparent adhesive 27 to bond the electrochromic film layer 22 to the light-transmitting cover plate 21, air bubbles are easily generated between the electrochromic film layer 22 and the light-transmitting cover plate 21 (especially at the inner edge of the shielding portion 26), affecting the appearance of the back cover 20 and increasing the difficulty of bonding the electrochromic film layer 22 and the light-transmitting cover plate 21, thereby affecting the production yield of the back cover 20.
[0120] Meanwhile, due to the large thickness of the shielding part 26, the layer difference between the electrochromic film layer 22 and the light-transmitting cover plate 21 is large. During high-temperature testing, the optically transparent adhesive 27 is prone to detach from the light-transmitting cover plate 21 under stress. In order to improve the connection strength between the electrochromic film layer 22 and the light-transmitting cover plate 21 and reduce the generation of bubbles, a thicker optically transparent adhesive 27 is required to connect the electrochromic film layer 22 and the light-transmitting cover plate 21, which increases the thickness of the back cover 20 and thus increases the overall thickness of the electronic device 100, which is not conducive to achieving the thin and light design of the electronic device 100.
[0121] To avoid the above problems, please refer to Figure 12a and Figure 12b , Figure 12a A cross-sectional view of the back cover 20 provided for some embodiments of this application. Figure 12b for Figure 12a Enlarged view circled in section C. The back cover 20 shown in this embodiment is... Figures 8-11b The difference in the back cover 20 shown is that, while balancing the blocking effect and surface flatness of the blocking portion 26, a blocking portion 26 is provided between the light-transmitting cover 21 and the edge portion 22a to block the edge portion 22a, and the thickness d of the blocking portion 26 is less than 4 micrometers. For example, the thickness of the blocking portion 26 can be 3.5 micrometers, 3 micrometers, 2.8 micrometers, 2.5 micrometers, 2.2 micrometers, 2 micrometers, 1.8 micrometers, 1.6 micrometers, 1.5 micrometers, 1.2 micrometers, 1 micrometer, etc. The specific thickness of the blocking portion 26 can be determined according to the material and number of layers of the blocking portion 26.
[0122] In some embodiments of this application, vacuum coating and electroplating processes can be used to form a shielding portion 26 between the edge 22a of the light-transmitting cover plate 21 and the electrochromic film layer 22. Vacuum coating is a technique for producing thin film materials using physical methods. In vacuum coating, atoms of the material are separated from a heating source in a vacuum chamber and deposited onto the surface of the object to be coated. There are three forms of vacuum coating: evaporation coating, sputtering coating, and ion plating. Electroplating involves immersing the product to be electroplated in a chemical electroplating solution. Vacuum coating and electroplating result in films with good density; therefore, when the thickness of the shielding portion 26 formed by vacuum coating or electroplating is less than 4 micrometers, the requirements for shielding effect and surface flatness of the shielding portion 26 can be met.
[0123] Therefore, by setting the thickness of the shielding portion 26 to less than 4 micrometers, the layer difference between the electrochromic film layer 22 and the light-transmitting cover plate 21 can be reduced while maintaining both the shielding effect and the surface flatness of the shielding portion 26. This eliminates air bubbles between the electrochromic film layer 22 and the light-transmitting cover plate 21 when bonding them, significantly reducing the bonding difficulty and improving production yield. Simultaneously, reducing the overall thickness of the back cover 20 facilitates a thinner and lighter design for the electronic device 100.
[0124] In some further embodiments of this application, the thickness d of the shielding portion 26 is less than or equal to 1 micrometer. For example, the thickness of the shielding portion 26 can be 0.9 micrometers, 0.8 micrometers, 0.6 micrometers, 0.5 micrometers, 0.2 micrometers, 0.08 micrometers, 0.06 micrometers, 0.04 micrometers, 0.02 micrometers, 0.01 micrometers, etc. This further reduces the layer difference between the electrochromic film layer 22 and the light-transmitting cover plate 21, thereby eliminating air bubbles between them when bonding the electrochromic film layer 22 to the light-transmitting cover plate 21. This significantly reduces the bonding difficulty between the electrochromic film layer 22 and the light-transmitting cover plate 21, improving production yield. Simultaneously, the overall thickness of the back cover 20 is further reduced, which is more conducive to achieving a thinner and lighter design of the electronic device 100.
[0125] In some embodiments, the thickness d of the shielding portion 26 is greater than or equal to 0.01 micrometers. Specifically, the thickness d of the shielding portion 26 can satisfy: 0.01 micrometers ≤ d < 4 micrometers, or the thickness d of the shielding portion 26 can satisfy: 0.01 micrometers ≤ d ≤ 1 micrometer. Therefore, by further limiting the thickness of the shielding portion 26 to be greater than or equal to 0.01 micrometers, the shielding effect of the shielding portion 26 can be ensured, preventing the edge portion 22a of the electrochromic film layer 22 from being exposed. Thus, while maintaining the shielding effect of the shielding portion 26, the layer difference between the electrochromic film layer 22 and the light-transmitting cover plate 21 is reduced, eliminating air bubbles between the electrochromic film layer 22 and the light-transmitting cover plate 21, greatly reducing the bonding difficulty of the electrochromic film layer 22 and the light-transmitting cover plate 21, and improving production yield. At the same time, the overall thickness of the back cover 20 is reduced, which is beneficial for achieving a thinner and lighter design of the electronic device 100.
[0126] Specifically, the light transmittance of the blocking portion 26 is 0-50%. Further, the light transmittance of the blocking portion 26 can be 0, 10%, 15%, 20%, 25%, 30%, 35%, 40%, 45%, 50%, etc. Here, light transmittance represents the ability of light to pass through a medium; the higher the light transmittance, the better the light transmission, and the lower the light transmittance, the worse the light transmission. Therefore, by setting the light transmittance of the blocking portion 26 to 0-50%, the shielding effect of the blocking portion 26 can be guaranteed, preventing the edge portion 22a of the electrochromic film layer 22 from being exposed.
[0127] In some embodiments, the shielding portion 26 is a non-conductive component. That is, the shielding portion 26 can be an insulating component. For example, the resistance of the shielding portion 26 is not less than 5 megohms. Specifically, the resistance of the shielding portion 26 can be between 5 megohms and 20,000 megohms. In this way, the shielding portion 26 can be prevented from interfering with the antenna signal of the electronic device 100, thereby improving the stability of the antenna signal of the electronic device 100.
[0128] It is understood that the blocking portion 26 can be disposed on any layer between the light-transmitting cover plate 21 and the edge portion 22a of the electrochromic film layer 22. For example, the blocking portion 26 can be disposed on the surface of the light-transmitting cover plate 21 facing the electrochromic film layer 22. Alternatively, the blocking portion 26 can be disposed on the surface of the electrochromic film layer 22 facing the light-transmitting cover plate 21. Alternatively, the blocking portion 26 can also be disposed on the first transparent conductive layer 221 of the electrochromic film layer 22. When an intermediate layer (such as a first substrate layer 226) is provided between the electrochromic film layer 22 and the light-transmitting cover plate 21, the blocking portion 26 can also be disposed on any surface of the intermediate layer. As long as the blocking portion 26 can block the edge portion 22a on the electrochromic film layer 22, this application does not limit the specific placement of the blocking portion 26.
[0129] For some specific embodiments of this application, please refer to Figure 12a and Figure 12b The shielding part 26 is disposed on the surface of the light-transmitting cover plate 21 facing the electrochromic film layer 22. Since the surface of the light-transmitting cover plate 21 is smooth and flat, the shielding part 26 can be easily disposed on the surface of the light-transmitting cover plate 21, which reduces the processing difficulty of the shielding part 26 and helps to improve processing efficiency and production yield.
[0130] In some embodiments, please refer to Figure 13 The shielding portion 26 includes a light-shielding layer 26a, which includes one or more of the following: an indium layer, an indium alloy layer, and an interlaced layer formed by alternating and stacking at least two sublayers with different refractive indices. It should be noted that "multiple" in this application refers to two or more types.
[0131] For example, in some embodiments, the interleaved layer can be a first interleaved layer formed by alternating and stacking silicon dioxide layers and titanium dioxide layers, a second interleaved layer formed by alternating and stacking silicon dioxide layers and niobium oxide layers, or a third interleaved layer formed by alternating and stacking silicon dioxide layers and tantalum oxide layers. Each sublayer in the interleaved layer can be one or more layers, and the thickness of each sublayer in the interleaved layer can be the same or different.
[0132] Specifically, the light-shielding layer 26a may include one of the aforementioned indium layer, indium alloy layer, and interlaced layer, or it may include multiple of the aforementioned indium layer, indium alloy layer, and interlaced layer. When the light-shielding layer 26a includes multiple of the aforementioned indium layer, indium alloy layer, and interlaced layer, the light-shielding layer 26a may be a stacked structure formed by stacking multiple of the aforementioned indium layer, indium alloy layer, and interlaced layer.
[0133] For example, in some embodiments, the light-shielding layer 26a is an indium layer or an indium alloy layer. Since the light transmittance of indium layers and indium alloy layers is relatively low, setting the light-shielding layer 26a as an indium layer or an indium alloy layer can reduce the thickness of the shielding portion 26 while ensuring the shielding effect of the shielding portion 26.
[0134] The thickness of the indium layer and the indium alloy layer can be between 10 nanometers and 55 nanometers. When the thickness of the indium layer or the indium alloy layer is less than 10 nanometers, the light transmittance of the light-shielding layer 26a is relatively high, which cannot meet the requirement of shielding the edge portion 22a of the electrochromic film layer 22. Since indium is a semiconductor material, when the thickness of the indium layer or the indium alloy layer is greater than 55 nanometers, the indium layer or the indium alloy layer may become conductive. Therefore, by setting the thickness of the indium layer and the indium alloy layer to 10 nanometers-55 nanometers, the shielding effect of the light-shielding layer 26a can be guaranteed while preventing the light-shielding layer 26a from becoming conductive. This allows the light-shielding layer 26a to have the characteristics of being opaque and non-conductive, which not only guarantees the shielding effect of the light-shielding layer 26a but also prevents the light-shielding layer 26a from interfering with the antenna signal of the electronic device 100.
[0135] For example, in some embodiments, the light-shielding layer 26a is an alternating layer formed by sequentially stacking at least two sublayers with different refractive indices. For instance, the alternating layer can be a first alternating layer formed by sequentially stacking silicon dioxide and titanium dioxide layers, a second alternating layer formed by sequentially stacking silicon dioxide and niobium oxide layers, or a third alternating layer formed by sequentially stacking silicon dioxide and tantalum oxide layers. Each sublayer in the alternating layer can be one or more layers, and the thickness of each sublayer in the alternating layer can be the same or different.
[0136] Therefore, by setting the light-shielding layer 26a as an interlaced layer formed by alternating and stacking at least two sub-layers with different refractive indices, the light-shielding layer 26a can have the characteristics of being opaque and non-conductive. When light passes through the light-shielding layer 26a, each sub-layer will reflect and refract, which makes the light-shielding layer 26a produce a richer appearance effect and enriches the color variety of the light-shielding layer 26a. This allows the shielding part 26 to be better integrated with the back cover 20, further improving the aesthetic appearance of the back cover 20.
[0137] The thickness of the interlaced layer is 200 nanometers to 1000 nanometers. Further, the thickness of the interlaced layer is 200 nanometers to 500 nanometers. Specifically, the thickness of the interlaced layer can be, but is not limited to, 200 nanometers, 220 nanometers, 250 nanometers, 280 nanometers, 300 nanometers, 360 nanometers, 400 nanometers, 420 nanometers, 450 nanometers, and 500 nanometers. Therefore, while ensuring the shielding effect of the shielding part 26, the thickness of the shielding part 26 can be reduced, and the color variety of the light-shielding layer 26a can be enriched, facilitating better integration of the shielding part 26 and the back cover 20.
[0138] For example, in some embodiments, the light-shielding layer 26a is a stacked structure consisting of interlaced layers and indium or indium alloy layers. The interlaced layers can be disposed on the side of the indium or indium alloy layer away from the light-transmitting cover plate 21, or on the side of the indium or indium alloy layer closer to the light-transmitting cover plate 21. This allows the light-shielding layer 26a to be opaque and non-conductive, and its color can be adjusted as needed, allowing the blocking portion 26 to better integrate with the back cover 20, further improving the aesthetic appearance of the back cover 20.
[0139] Furthermore, in some other embodiments of this application, please refer to Figure 14 The shielding portion 26 also includes a base layer 26b, which is disposed between the light-shielding layer 26a and the light-transmitting cover plate 21. That is, during processing, the base layer 26b can be formed first on the light-transmitting cover plate 21, and then the light-shielding layer 26a can be formed on the side of the base layer 26b away from the light-transmitting cover plate 21. The base layer 26b can increase the bonding force between the light-shielding layer 26a and the light-transmitting cover plate 21, reduce the processing difficulty of the light-shielding layer 26a, and effectively prevent the light-shielding layer 26a from falling off.
[0140] The substrate 26b can be a silicon-containing substrate or a zirconium oxide-containing substrate. The thickness of the silicon-containing substrate can be 1 nanometer to 7 nanometers. This can increase the bonding force between the light-shielding layer 26a and the light-transmitting cover plate 21 while reducing the thickness of the substrate 26b and minimizing the impact of the substrate 26b on the overall thickness of the shielding part 26.
[0141] In some other embodiments of this application, please refer to Figure 15 The shielding portion 26 also includes a protective layer 26c, which is located on the side of the light-shielding layer 26a away from the light-transmitting cover plate 21. The protective layer 26c protects the light-shielding layer 26a from scratches and peeling. The protective layer 26c can be an oxide layer with high surface hardness. For example, the protective layer 26c can be a niobium oxide layer or a titanium oxide layer. The high hardness of niobium oxide and titanium oxide layers enhances the protective effect of the protective layer 26c.
[0142] For example, when the light-shielding layer 26a is an indium layer or an indium alloy layer, indium and indium alloys have relatively low hardness and are easily scratched by foreign objects, affecting the appearance and shielding effect of the shielding part 26. In this case, a protective layer 26c with higher hardness is provided on the side of the light-shielding layer 26a away from the light-transmitting cover plate 21, which can effectively protect the light-shielding layer 26a and improve the production yield of the shielding part 26.
[0143] The thickness of the protective layer 26c can be 10 nanometers to 35 nanometers. For example, the thickness of the protective layer 26c can be 10 nanometers, 15 nanometers, 18 nanometers, 20 nanometers, 25 nanometers, 30 nanometers, 32 nanometers, etc. Therefore, the protective layer 26c can effectively protect the light-shielding layer 26a and reduce the impact of the protective layer 26c on the overall thickness of the shielding part 26.
[0144] It is understandable that when the surface hardness of the light-shielding layer 26a is high, the protective layer 26c may not be required. For example, in some embodiments, the light-shielding layer 26a includes a first interlaced layer formed by alternating and stacking silicon dioxide and titanium dioxide layers, or a second interlaced layer formed by alternating and stacking silicon dioxide and niobium oxide layers, or a third interlaced layer formed by alternating and stacking silicon dioxide and tantalum oxide layers. In this case, the surface hardness of the light-shielding layer 26a is high, and the protective layer 26c may not be required.
[0145] For example, in some embodiments, the shielding portion 26 includes a substrate 26b, a light-shielding layer 26a, and a protective layer 26c. Specifically, the substrate 26b can be a silicon-containing substrate, the light-shielding layer 26a can be an opaque, non-conductive indium layer or indium alloy layer, and the protective layer 26c is a niobium oxide layer.
[0146] In other embodiments, the shielding portion 26 includes a base layer 26b and a light-shielding layer 26a. Specifically, the base layer 26b may be a zirconium oxide-containing base layer, and the light-shielding layer 26a may be a first staggered layer formed by alternating and stacking silicon dioxide layers and titanium dioxide layers.
[0147] In some embodiments, the shielding portion 26 includes a base layer 26b, two light-shielding layers 26a, and a protective layer 26c. Specifically, the base layer 26b can be a zirconium oxide-containing base layer, the first light-shielding layer 26a can be a first interlaced layer, a second interlaced layer, or a third interlaced layer, the second light-shielding layer 26a is an indium layer or an indium alloy layer, and the protective layer 26c can be a niobium oxide layer or a titanium oxide layer. The first light-shielding layer 26a is disposed between the base layer 26b and the second light-shielding layer 26a. In this embodiment, the base layer 26b can also be a silicon-containing reflective layer with a thickness of 10 nanometers to 100 nanometers.
[0148] Please see Figure 16 , Figure 16 This is a cross-sectional view of the back cover 20 according to another embodiment of this application, which is consistent with... Figure 4 The provided back covers are largely the same, the difference being... Figure 16The back cover 20 shown also includes a decorative layer 25, which is disposed on the side of the electrochromic film layer 22 away from the light-transmitting cover plate 21. The orthographic projection of the decorative layer 25 onto the light-transmitting cover plate 21 completely covers the orthographic projection of the electrochromic region 22b of the electrochromic film layer 22 onto the light-transmitting cover plate 21. In one embodiment, the orthographic projection of the decorative layer 25 onto the light-transmitting cover plate 21 completely coincides with the orthographic projection of the electrochromic region 22b of the electrochromic layer 222 onto the light-transmitting cover plate 21. Of course, in other embodiments of this application, the back cover 200 may not include the decorative layer 25.
[0149] Understandably, when the electrochromic layer 222 is in a transparent state, the decorative layer 25 is visible from outside the light-transmitting cover 21, making the appearance of the back cover 20 reflect the appearance of the decorative layer 25. Optionally, the decorative layer 25 includes at least one of an optical film layer, a color layer, and a texture layer. This allows the back cover 20 to have diverse light hues, colors, and texture variations, enhancing the appearance of the back cover 20.
[0150] In some embodiments of this application, the decorative layer 25 includes an optical film layer. It is understood that an optical film layer is an optical medium material layer through which light propagates. It can alter the reflection and refraction of light passing through the optical film layer, causing the decorative layer 25 to exhibit certain gloss variations, displaying different colors of gloss at different angles, and providing a metallic texture. The reflectivity, refractive index, and light transmittance of the optical film layer can be changed by altering its material, thickness, and number of layers to meet the requirements of different scenarios.
[0151] The optical film can be made of either inorganic or organic materials. Optionally, inorganic materials include at least one of elemental metals, inorganic oxides, and inorganic fluorides. Optionally, organic materials include at least one of polyethers, polyesters, fluorinated polymers, and silicon-containing polymers. When the optical film is made of an organic material, it exhibits good flexibility and bendability, allowing it to be cut to the desired size.
[0152] In some embodiments of this application, the material of the optical film layer includes at least one selected from elemental metals, inorganic oxides, and inorganic fluorides. Further, the inorganic oxides include at least one selected from metal oxides and non-metal oxides. Specifically, the elemental metals may be, but are not limited to, aluminum, yttrium, germanium, etc.; the inorganic oxides may be, but are not limited to, titanium dioxide, titanium pentoxide, silicon dioxide, silicon monoxide, zirconium dioxide, aluminum oxide, tantalum pentoxide, niobium monoxide; and the inorganic fluorides may be, but are not limited to, magnesium fluoride, calcium fluoride, etc.
[0153] In some embodiments of this application, the thickness of the optical film layer is 20 nanometers to 500 nanometers. By setting an optical film layer with a nanometer-thickness, a certain optical effect can be provided to the back cover 20 without affecting the overall thickness of the back cover 20. Further, the thickness of the optical film layer is 50 nanometers to 420 nanometers. Specifically, the thickness of the optical film layer can be, but is not limited to, 80 nanometers, 95 nanometers, 180 nanometers, 250 nanometers, 300 nanometers, 360 nanometers, 400 nanometers, etc.
[0154] In this application, the optical film layer can be a single-layer film structure or a multi-layer film structure. When the optical film layer is a multi-layer film structure, the desired function can be achieved by controlling the material and thickness of each layer, as well as the fit between the layers. Optionally, the optical film layer is formed by alternating layers of at least two optical thin films with different refractive indices. That is, when the optical film layer is composed of multiple optical thin films, the refractive indices of adjacent optical thin films are different. Further, the optical film layer is formed by periodically alternating layers of at least two thin films with different refractive indices. The materials and thicknesses of the multiple optical thin films can be the same or different. The optical properties of the multiple optical thin films are different, and after light passes through the multiple optical thin films, reflection and refraction will occur on the surface of each thin film, producing a richer visual effect.
[0155] Optionally, the thickness of the optical thin film is 3 nanometers to 200 nanometers. Specifically, the optical film layers may include, but are not limited to, 2, 3, 4, 5, 6, 7, or 8 optical thin films.
[0156] In other embodiments of this application, the decorative layer 25 includes a color layer. It is understood that the color layer can give the decorative layer 25 a rich visual effect. Optionally, the thickness of the color layer is 50 nanometers to 500 nanometers. In one embodiment, the color layer can be formed by screen printing or spraying color ink.
[0157] In other embodiments of this application, the decorative layer 25 includes a textured layer. It is understood that by setting the textured layer, the surface of the decorative layer 25 can present various appearances, such as lines, textures, or patterns. Optionally, the thickness of the textured layer is 100 nanometers to 1000 nanometers. In one embodiment of this application, the textured layer is formed on the decorative layer 25 by UV transfer optical texturing. Optionally, the textured layer is formed on the decorative layer 25 using a high-scratch-resistant UV transfer adhesive, a high-hardness UV transfer adhesive, a high-elasticity UV transfer adhesive, or a general-purpose UV transfer adhesive.
[0158] In other embodiments of this application, the decorative layer 25 includes at least two or three layers selected from an optical film layer, a color layer, and a texture layer to improve the appearance of the decorative layer 25. Specifically, but not limited to, the superposition of an optical film layer and a color layer can make the color expression more significant, and the color is different at different angles; the superposition of an optical film layer and a texture layer can make the texture layer more visually prominent, and the color is different at different angles; the superposition of a color layer and a texture layer can present a colored texture; the superposition of an optical film layer, a color layer, and a texture layer can present a colored texture, and the color is different at different angles.
[0159] In some embodiments of this application, the color difference ΔEab between the color of the shielding portion 26 and the color of the decorative layer 25 is 0-5. That is, the color difference ΔEab satisfies: 0 ≤ ΔEab ≤ 5, and further, ΔEab satisfies 0 ≤ ΔEab ≤ 2. This color difference is almost invisible to the naked eye. Therefore, by controlling the color difference ΔEab between the color of the shielding portion 26 and the color of the decorative layer 25 within 0-5, the color of the shielding portion 26 and the color of the decorative layer 25 can be made substantially the same, improving the aesthetic appearance of the back cover 20.
[0160] Taking two colored samples as an example, if both samples are labeled with L, a, and b, where L represents brightness, ranging from 0 to 100, with 0 being the darkest and 100 the brightest; a represents the color change from green to red, ranging from -128 to +128, with pure green being -128 and pure red being +128, divided into 256 levels; and b represents the color change from blue to yellow, ranging from -128 to +128, with pure blue being -128 and pure yellow being +128, also divided into 256 levels, then the color labels for the two samples are as follows: Color sample one is labeled with L1, a1, and b1; Color sample two is labeled with L2, a2, and b2. The color difference ΔEab between the two samples can be calculated using the following formula: Color difference ΔEab=[(ΔL*)2+(Δa*)2+(Δb*)2]1 / 2.
[0161] Please return to the reference. Figure 2 The circuit board 3 may include a main circuit board 31 and a secondary circuit board 32. Of course, in some embodiments of this application, the circuit board 3 may only include the main circuit board 31. The main circuit board 31 is used to integrate a control chip. The control chip may be, for example, an application processor (AP), double data rate synchronous dynamic random access memory (DDR), or universal flash storage (UFS). In some embodiments, the main circuit board 31 is electrically connected to the electrochromic film layer 22.
[0162] The main circuit board 31 can be a rigid circuit board 3, a flexible circuit board 3, or a rigid-flex circuit board 3. The main circuit board 31 can use an FR-4 dielectric board, a Rogers dielectric board, or a hybrid dielectric board of FR-4 and Rogers, etc. Here, FR-4 is a designation for a flame-retardant material grade, and the Rogers dielectric board is a high-frequency board.
[0163] The secondary circuit board 32 is used to integrate electronic components such as antenna (e.g., 5G antenna) RF front-end, universal serial bus (USB) devices, and oscillators.
[0164] The secondary circuit board 32 can be a rigid circuit board 3, a flexible circuit board 3, or a rigid-flex circuit board 3. The secondary circuit board 32 can be an FR-4 dielectric board, a Rogers dielectric board, a hybrid dielectric board of FR-4 and Rogers, etc.
[0165] The secondary circuit board 32 is electrically connected to the main circuit board 31 via the connection structure 4 to enable data and signal transmission between the secondary circuit board 32 and the main circuit board 31. The connection structure 4 can be a flexible printed circuit board (FPC). In other embodiments, the connection structure 4 can also be a wire or enameled wire.
[0166] In some embodiments, please refer to Figure 2 The electronic device 100 also includes a middle plate 24. The middle plate 24 is fixed around the inner surface of the frame 23. For example, the middle plate 24 can be fixed to the frame 23 by welding, or the middle plate 24 can be integrally formed with the frame 23. The middle plate 24 serves as the structural "skeleton" of the electronic device 100, and the circuit board can be fixed to the middle plate 24 by means of threaded connection, snap-fit, welding, etc.
[0167] When the electronic device 100 does not include the middle plate 24, the circuit board 3 can be fixed to the surface of the display panel 12 facing the light-transmitting cover plate 21 by means of threaded connection, snap-fit, welding or other methods.
[0168] In the back cover 20 of the electronic device 100 provided in this application, since the thickness of the shielding portion 26 is less than 4 micrometers, the layer difference between the electrochromic film layer 22 and the light-transmitting cover plate 21 can be reduced while taking into account both the shielding effect and the surface flatness of the shielding portion 26. This eliminates air bubbles between the electrochromic film layer 22 and the light-transmitting cover plate 21 when bonding them, greatly reducing the bonding difficulty and improving production yield. Simultaneously, the reduced overall thickness of the back cover 20 facilitates a thinner and lighter design for the electronic device 100.
[0169] Since the electronic device 100 provided in this application embodiment includes the back cover 20 as described in the above embodiment, both can solve the same technical problem and achieve the same effect.
[0170] Some embodiments of this application also provide a screen 1, which includes a light-transmitting cover, a display panel 12, and a blocking portion 26. The light-transmitting cover in screen 1 can be... Figure 2 The front cover 11 is shown. The display panel 12 is stacked on top of the light-transmitting cover. Specifically, the display panel 12 can be located on the side of the light-transmitting cover facing the back cover 20. For example, the display panel 12 can be bonded to the light-transmitting cover using optically transparent adhesive 27.
[0171] The shielding part 26 is disposed between the edge of the display panel 12 and the light-transmitting cover plate, and the orthographic projection of the edge of the display panel 12 on the light-transmitting cover plate is located within the orthographic projection of the shielding part 26 on the light-transmitting cover plate. The thickness d of the shielding part 26 is less than 4 micrometers.
[0172] For example, the thickness of the shielding portion 26 can be 3.5 micrometers, 3 micrometers, 2.8 micrometers, 2.5 micrometers, 2.2 micrometers, 2 micrometers, 1.8 micrometers, 1.6 micrometers, 1.5 micrometers, 1.2 micrometers, 1 micrometer, etc. The specific thickness of the shielding portion 26 can be determined according to the material, number of layers, etc. of the shielding portion 26.
[0173] In some embodiments of this application, vacuum coating or electroplating processes can be used to form a shielding portion 26 between the edge of the light-transmitting cover and the display panel 12.
[0174] Therefore, by setting the thickness of the shielding portion 26 to less than 4 micrometers, the layer difference between the display panel 12 and the light-transmitting cover can be reduced while maintaining both the shielding effect and the surface flatness of the shielding portion 26. This eliminates air bubbles between the display panel 12 and the light-transmitting cover when bonding them, significantly reducing the bonding difficulty and improving production yield. Simultaneously, reducing the overall thickness of the screen 1 facilitates a thinner and lighter design for the electronic device 100.
[0175] In some further embodiments of this application, the thickness d of the blocking portion 26 is less than or equal to 1 micrometer. For example, the thickness of the blocking portion 26 can be 0.9 micrometers, 0.8 micrometers, 0.6 micrometers, 0.5 micrometers, 0.2 micrometers, 0.08 micrometers, 0.06 micrometers, 0.04 micrometers, 0.02 micrometers, 0.01 micrometers, etc. This further reduces the layer difference between the display panel 12 and the light-transmitting cover plate, thereby eliminating air bubbles between the electrochromic film layer 22 and the light-transmitting cover plate when bonding the display panel 12 to the light-transmitting cover plate. This significantly reduces the bonding difficulty between the display panel 12 and the light-transmitting cover plate, improving production yield. Simultaneously, it further reduces the overall thickness of the screen 1, making it more conducive to achieving a thinner and lighter design for the electronic device 100.
[0176] In some embodiments, the thickness d of the shielding portion 26 is greater than or equal to 0.01 micrometers. Specifically, the thickness d of the shielding portion 26 can satisfy: 0.01 micrometers ≤ d < 4 micrometers, or the thickness d of the shielding portion 26 can satisfy: 0.01 micrometers ≤ d ≤ 1 micrometer. Therefore, by further limiting the thickness of the shielding portion 26 to be greater than or equal to 0.01 micrometers, the shielding effect of the shielding portion 26 can be ensured, preventing the edges of the display panel 12 from being exposed. Thus, while maintaining the shielding effect of the shielding portion 26, the layer difference between the display panel 12 and the light-transmitting cover is reduced, eliminating air bubbles between the display panel 12 and the light-transmitting cover, greatly reducing the bonding difficulty of the display panel 12 and the light-transmitting cover, and improving production yield. At the same time, the overall thickness of the screen 1 is reduced, which is beneficial for achieving a thinner and lighter design of the electronic device 100.
[0177] This application embodiment also provides a method for processing a back cover 20, wherein the back cover 20 includes a light-transmitting cover plate 21 and an electrochromic film layer 22, the electrochromic film layer 22 and the light-transmitting cover plate 21 being stacked together. The back cover 20 in this embodiment can be the back cover 20 in the above embodiments, but is not limited thereto.
[0178] The method includes forming a shielding portion 26 between the edge portion 22a of the light-transmitting cover plate 21 and the electrochromic film layer 22 using a vacuum coating or electroplating process, wherein the thickness d of the shielding portion 26 satisfies: d < 4 micrometers.
[0179] In some embodiments, the orthographic projection of the edge portion 22a of the electrochromic film layer 22 onto the light-transmitting cover plate 21 lies within the orthographic projection of the blocking portion 26 onto the light-transmitting cover plate 21. In this way, the blocking portion 26 can completely cover the edge portion 22a, improving the blocking effect of the blocking portion 26, preventing the edge portion 22a from being exposed, and further enhancing the aesthetic appearance of the back cover 20.
[0180] Vacuum coating is a technology that produces thin film materials using physical methods. In vacuum coating, atoms of the material are separated from a heating source and deposited onto the surface of the object being coated within a vacuum chamber. There are three forms of vacuum coating: evaporation coating, sputtering coating, and ion plating. Electroplating involves immersing the product to be plated in a chemical electroplating solution. Vacuum coating and electroplating result in highly dense films. Therefore, when the thickness of the shielding portion 26 formed by vacuum coating or electroplating is less than 4 micrometers, the requirements for shielding effect and surface flatness of the shielding portion 26 can be met. This reduces the layer difference between the electrochromic film layer 22 and the light-transmitting cover plate 21. Consequently, when bonding the electrochromic film layer 22 to the light-transmitting cover plate 21, air bubbles between the electrochromic film layer 22 and the light-transmitting cover plate 21 can be eliminated, greatly reducing the bonding difficulty and improving production yield. At the same time, the overall thickness of the back cover 20 is reduced, which is conducive to the thinner and lighter design of the electronic device 100.
[0181] It is understood that the blocking portion 26 can be disposed on any layer between the light-transmitting cover plate 21 and the edge portion 22a of the electrochromic film layer 22. For example, the blocking portion 26 can be disposed on the surface of the light-transmitting cover plate 21 facing the electrochromic film layer 22. Alternatively, the blocking portion 26 can be disposed on the surface of the electrochromic film layer 22 facing the light-transmitting cover plate 21. Alternatively, when an intermediate layer is provided between the electrochromic film layer 22 and the light-transmitting cover plate 21, the blocking portion 26 can also be disposed on any surface of the intermediate layer. As long as the blocking portion 26 can block the edge portion 22a on the electrochromic film layer 22, this application does not limit the specific location of the blocking portion 26.
[0182] Specifically, the area on the light-transmitting cover plate 21 opposite to the edge portion 22a of the electrochromic film layer 22 is the first region. Forming a blocking portion 26 between the light-transmitting cover plate 21 and the edge portion 22a includes: forming the blocking portion 26 on the surface of the first region facing the edge portion 22a, and positioning the blocking portion 26 between the first region and the edge portion 22a. Here, the area on the light-transmitting cover plate 21 opposite to the edge portion 22a refers to the orthographic projection area of the edge portion 22a onto the light-transmitting cover plate 21.
[0183] Therefore, the edge portion 22a can be shielded by the shielding portion 26 formed in the first region, thereby improving the appearance of the back cover 20. At the same time, since the surface of the light-transmitting cover 21 is smooth and flat, the shielding portion 26 can be easily formed on the light-transmitting cover 21, reducing the processing difficulty of the shielding portion 26 and improving production efficiency and yield.
[0184] In some embodiments, the electrochromic film layer 22 further has a middle portion 22b surrounded by an edge portion 22a, and the area on the light-transmitting cover plate 21 opposite to the middle portion 22b is a second region. Before the shielding portion 26 is formed on the surface of the first region facing the edge portion 22a, the following are also included:
[0185] A removable film is formed on the surface of the second region facing the central portion 22b;
[0186] After forming the shielding portion 26 on the surface of the first region facing the edge portion 22a, the process further includes: removing the removable film layer.
[0187] The area on the light-transmitting cover plate 21 opposite to the electrochromic area 22b (i.e., the second area) refers to the orthographic projection area of the electrochromic area 22b on the light-transmitting cover plate 21.
[0188] Specifically, during the processing, before the shielding part 26 is formed on the first area, a removable film layer can be deposited or pasted on the second area. After the shielding part 26 is formed on the first area of the light-transmitting cover plate 21, the removable film layer is removed.
[0189] This improves the positional accuracy of the shielding part 26, reduces the plating difficulty, and helps improve the production yield.
[0190] In the following embodiments, the specific processing method of the back cover 20 is described using the example of the shielding part 26 being disposed on the side surface of the light-transmitting cover plate 21 facing the electrochromic film layer 22.
[0191] Example 1
[0192] like Figure 17 The processing method of the back cover 20 in this embodiment includes steps S101-S105.
[0193] S101: Preparation of electrochromic film layer 22;
[0194] Specifically, the electrochromic film layer 22 has a sandwich structure, with the upper and lower layers being a first transparent conductive layer 221 and a second transparent conductive layer 225, respectively. One side of the first transparent conductive layer 221 is covered by a first substrate layer 226, and one side of the second transparent conductive layer 225 is covered by a second substrate layer 227. The electrochromic layer 222 can be a PDLC dimming film. During fabrication, the two transparent conductive layers and the PDLC dimming film on both sides can be precisely aligned using a roll-to-roll method and then sequentially laminated. The laminated structure is then UV-cured to obtain the electrochromic film layer 22.
[0195] S102: Apply decorative layer 25;
[0196] A decorative layer 25 with optically transparent adhesive 27 (OCA) is bonded to the second substrate layer 227 of the electrochromic film layer 22. The decorative layer 25 may include one or more of the following: optical film layer, texture layer, and color layer.
[0197] S103: Apply optical transparent adhesive 27;
[0198] An optically transparent adhesive 27 of 15-30 micrometers is bonded to the first substrate layer 226 of the electrochromic film layer 22.
[0199] S104: A shielding portion 26 is formed on the surface of the first region of the light-transmitting cover plate 21 facing the edge portion 22a of the electrochromic film layer 22;
[0200] A shielding portion 26 is deposited (e.g., vacuum-deposited) on the surface of the first region of the light-transmitting cover plate 21 facing the edge portion 22a of the electrochromic film layer 22. The shielding portion 26 may include a base layer 26b, a light-shielding layer 26a, and a protective layer 26c. Specifically, during the deposition process, a base layer 26b may first be deposited on the surface of the first region facing the edge portion 22a of the electrochromic film layer 22. The base layer 26b may be a silicon-containing base layer 26b with a thickness of 1 nm to 7 nm. Then, a light-shielding layer 26a is deposited on the side of the base layer 26b away from the light-transmitting cover plate 21. The light-shielding layer 26a may be an opaque, non-conductive indium layer or indium alloy layer with a thickness of 10 nm to 55 nm. Next, a protective layer 26c is deposited on the side of the light-shielding layer 26a away from the base layer 26b. The protective layer 26c can be an oxide layer such as a niobium oxide layer or a titanium oxide layer, and the thickness of the protective layer 26c is 10 nanometers to 35 nanometers.
[0201] In the specific plating process, before plating the shielding part 26, a removable film layer can be first plated or pasted on the surface of the second region of the light-transmitting cover plate 21 facing the electrochromic region 22b. After the shielding part 26 is plated in the first region, the removable film layer is then removed.
[0202] S105: The electrochromic film layer 22 with light-transmitting chemical adhesive is bonded to the light-transmitting cover plate 21 to form the back cover 20.
[0203] Example 2
[0204] The processing method of the back cover 20 in this embodiment is largely the same as that in Embodiment 1, except that the material of the shielding part 26 is different in this embodiment. The shielding part 26 in this embodiment includes a base layer 26b and a light-shielding layer 26a, wherein the base layer 26b is a zirconium oxide-containing base layer with a thickness of 5 nm to 30 nm. The light-shielding layer 26a is a first interlaced layer formed by alternating and stacking silicon dioxide and titanium dioxide layers.
[0205] During the plating process, a base layer 26b is first deposited on the surface of the first region of the light-transmitting cover plate 21 facing the edge portion 22a of the electrochromic film layer 22. The base layer 26b is a silicon-containing base layer. Then, a light-shielding layer 26a is deposited on the side of the base layer 26b away from the light-transmitting cover plate 21.
[0206] Example 3
[0207] The processing method for the back cover in this embodiment is largely the same as that in Embodiment 1, except that the material of the shielding portion 26 is different. The shielding portion 26 in this embodiment includes a base layer 26b, two light-shielding layers 26a, and a protective layer 26c. The base layer 26b is a zirconium oxide base layer with a thickness of 5 nm to 30 nm. The first light-shielding layer is a first interlaced layer formed by alternating layers of silicon dioxide and titanium dioxide, or a second interlaced layer formed by alternating layers of silicon dioxide and niobium oxide, or a third interlaced layer formed by alternating layers of silicon dioxide and tantalum oxide. The thickness of the first, second, and third interlaced layers is 200 nm to 1000 nm. The second light-shielding layer is located on the side of the first light-shielding layer away from the base layer 26b, and is an indium layer or an indium alloy layer. The thickness of the indium layer or indium alloy layer is 10 nm to 55 nm. The protective layer 26c is an oxide layer such as niobium oxide or titanium oxide, and the thickness of the protective layer 26c is 10 nanometers to 35 nanometers.
[0208] During the plating process, a base layer 26b is first deposited on the surface of the first region of the light-transmitting cover plate 21 facing the edge portion 22a of the electrochromic film layer 22. Then, a first light-shielding layer is deposited on the side of the base layer 26b away from the light-transmitting cover plate 21. Next, a second light-shielding layer is deposited on the side of the first light-shielding layer away from the base layer 26b. Finally, a protective layer 26c is deposited on the side of the second light-shielding layer away from the base layer 26b.
[0209] Example 4
[0210] The processing method of the back cover 20 in this embodiment is largely the same as that in Embodiment 3, except that the material of the shielding part 26 is different in this embodiment. The shielding part 26 in this embodiment includes a base layer 26b, two light-shielding layers 26a, and a protective layer 26c. The base layer 26b is a silicon-containing reflective layer with a thickness of 10 nm to 100 nm. The first light-shielding layer is a first interlaced layer formed by alternating layers of silicon dioxide and titanium dioxide, with a thickness of 200 nm to 1000 nm. The second light-shielding layer is located on the side of the first light-shielding layer away from the base layer 26b, and is an indium layer or an indium alloy layer. The thickness of the indium layer or indium alloy layer is 10 nm to 55 nm. The protective layer 26c is an oxide layer such as a niobium oxide layer or a titanium oxide layer, with a thickness of 10 nm to 35 nm.
[0211] The electronic device 100 provided in this application includes a back cover 20 with electrochromic function. Specifically, when a user uses the electronic device 100, they can manually switch the state of the electrochromic film layer 22 according to actual needs, thereby switching the appearance state of the back cover 22. For example, the user can switch the state of the electrochromic film layer 22 by using the volume button, the power button, or by tapping the back cover, so that the electrochromic film layer 22 switches between a transparent state and a frosted state (also known as a colored state), making the back cover 20 present different appearance states.
[0212] For example, users can switch the state of the electrochromic film layer 22 according to the light intensity of the actual usage scenario. Specifically, users can switch the electrochromic film layer 22 to a frosted state in bright light (e.g., daytime) and to a transparent state in dim light (e.g., nighttime). Alternatively, users can switch the electrochromic film layer 22 to a transparent state in bright light (e.g., daytime) and to a frosted state in dim light (e.g., nighttime).
[0213] Understandably, users can also switch the state of the electrochromic film layer 22 when the electronic device 100 is woken up (e.g., when there is a call reminder, SMS reminder, alarm reminder, missed call, unread message, etc.) and when the electronic device 100 enters standby mode by setting the program of the electronic device 100.
[0214] For example, when the electronic device 100 is woken up, its processor can apply a voltage to the electrochromic film layer 22, making it transparent. When the electronic device 100 enters standby mode, the processor can cancel the voltage on the electrochromic film layer 22, making it frosted. Thus, when the electronic device 100 is in silent mode, the user can be alerted to its wake-up status by the changing appearance of the back cover, allowing the user to receive messages, calls, etc., promptly.
[0215] In the description of this specification, specific features, structures, materials, or characteristics may be combined in any suitable manner in one or more embodiments or examples.
[0216] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of this application, and are not intended to limit them. Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of this application.
Claims
1. An electronic device, characterized in that, Includes a back cover, the back cover comprising: Translucent cover plate; An electrochromic film layer, wherein the electrochromic film layer is stacked with the light-transmitting cover plate; A shielding portion is disposed between the edge of the electrochromic film layer and the light-transmitting cover plate, and the shielding portion protrudes from the surface of the light-transmitting cover plate facing the electrochromic film layer. The thickness of the shielding portion is less than 1 micrometer. The shielding portion includes a light-shielding layer, which includes an indium layer and / or an indium alloy layer. The thickness of the indium layer is greater than or equal to 10 nanometers, and the thickness of the indium alloy layer is greater than or equal to 10 nanometers.
2. The electronic device according to claim 1, characterized in that, The thickness of the shielding part is greater than or equal to 0.01 micrometers.
3. The electronic device according to claim 1 or 2, characterized in that, The light transmittance of the shielding part is 0-50%.
4. The electronic device according to any one of claims 1-3, characterized in that, The shielding part is a non-conductive component.
5. The electronic device according to any one of claims 1-4, characterized in that, The resistance of the shielding part is not less than 5 megohms.
6. The electronic device according to any one of claims 1-5, characterized in that, The thickness of both the indium layer and the indium alloy layer is less than or equal to 55 nanometers.
7. The electronic device according to any one of claims 1-6, characterized in that, The shielding portion is disposed on the surface of the light-transmitting cover plate facing the electrochromic film layer.
8. The electronic device according to claim 7, characterized in that, The shielding part further includes: a base layer, which is disposed between the light-shielding layer and the light-transmitting cover plate.
9. The electronic device according to claim 8, characterized in that, The underlayment is either a silicon-containing underlayment or a zirconium oxide-containing underlayment.
10. The electronic device according to claim 9, characterized in that, The thickness of the silicon-containing underlayer is 1 nanometer to 7 nanometers, and the thickness of the zirconium oxide-containing underlayer is 5 nanometers to 30 nanometers.
11. The electronic device according to claims 1-10, characterized in that, The shielding portion further includes a protective layer, which is disposed on the side of the light-shielding layer away from the light-transmitting cover plate.
12. The electronic device according to claim 11, characterized in that, The protective layer is a niobium oxide layer or a titanium oxide layer.
13. The electronic device according to claim 11 or 12, characterized in that, The thickness of the protective layer is 10 nanometers to 35 nanometers.
14. The electronic device according to any one of claims 1-13, characterized in that, Also includes: A decorative layer is disposed on the side of the electrochromic film layer away from the light-transmitting cover plate.
15. The electronic device according to any one of claims 1-14, characterized in that, Also includes: A circuit board, located inside the back cover, wherein the electrochromic film layer is electrically connected to the circuit board.
16. A back cover, characterized in that, include: Translucent cover plate; An electrochromic film layer, wherein the electrochromic film layer is stacked with the light-transmitting cover plate; A shielding portion is disposed between the edge of the electrochromic film layer and the light-transmitting cover plate, and the shielding portion protrudes from the surface of the light-transmitting cover plate facing the electrochromic film layer. The thickness of the shielding portion is less than 1 micrometer. The shielding portion includes a light-shielding layer, which includes an indium layer and / or an indium alloy layer. The thickness of the indium layer is greater than or equal to 10 nanometers, and the thickness of the indium alloy layer is greater than or equal to 10 nanometers.
17. The back cover according to claim 16, characterized in that, The light transmittance of the shielding part is 0-50%.
18. The back cover according to claim 16 or 17, characterized in that, The shielding part is a non-conductive component.
19. The back cover according to any one of claims 16-18, characterized in that, The shielding portion is disposed on the surface of the light-transmitting cover plate facing the electrochromic film layer.
20. The back cover according to claim 19, characterized in that, The shielding part further includes: a base layer, which is disposed between the light-shielding layer and the light-transmitting cover plate.
21. The back cover according to any one of claims 16-20, characterized in that, The shielding portion further includes a protective layer, which is disposed on the side of the light-shielding layer away from the light-transmitting cover plate.
22. A method for processing a back cover, characterized in that, The back cover includes a light-transmitting cover plate and an electrochromic film layer, wherein the electrochromic film layer and the light-transmitting cover plate are stacked together, and the processing method includes: A shielding portion is formed between the edge of the light-transmitting cover plate and the electrochromic film layer using vacuum coating or electroplating processes. The shielding portion protrudes from the surface of the light-transmitting cover plate and has a thickness of less than 1 micrometer. The shielding portion includes a light-shielding layer, which includes an indium layer and / or an indium alloy layer. The thickness of the indium layer is greater than or equal to 10 nanometers, and the thickness of the indium alloy layer is greater than or equal to 10 nanometers.
23. The method for processing the back cover according to claim 22, characterized in that, The area on the light-transmitting cover plate opposite to the edge portion is a first region. Forming a shielding portion between the light-transmitting cover plate and the edge portion includes: forming a shielding portion on the surface of the first region facing the edge portion, and positioning the shielding portion between the first region and the edge portion.
24. The method for processing the back cover according to claim 23, characterized in that, The electrochromic film layer also has a central portion surrounded by the edge portion, and the area on the light-transmitting cover plate opposite the central portion is a second region. Before the shielding portion is formed on the surface of the first region facing the edge portion, it further includes: A removable film layer is formed on the surface of the second region facing the central portion; After forming a shielding portion on the surface of the first region facing the edge portion, it further includes: Remove the removable film layer.
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