A heating pedestal and semiconductor apparatus

Abstract

This application provides a heating base and a semiconductor device. The heating base includes a first support portion and a second support portion. Specifically, the first support portion is used to support the workpiece to be processed and to heat the workpiece during thin film deposition. At least a portion of the second support portion is arranged around the first support portion. The second support portion is provided with a cooling device to cool the second support portion during thin film deposition, thereby preventing process gases from reacting on the surface of the second support portion and forming deposits on the surface of the second support portion. This reduces the cleaning frequency, increases the service life of the heating base, and improves the utilization rate of the semiconductor device.

Description

Technical Field

[0001] This application relates to the field of semiconductor manufacturing, and in particular to a heating base and semiconductor equipment. Background Technology

[0002] With the widespread application of electronic devices, semiconductor manufacturing processes have developed rapidly, and thin film deposition is a common process in semiconductor manufacturing.

[0003] The current semiconductor equipment uses a heating base that is heated as a whole. During the process, the process gas will react and deposit on the edge surface of the heating base that is not covered by the object to be processed. When the deposits on the edge of the heating base accumulate to a certain thickness, they need to be cleaned to remove the deposits.

[0004] However, cleaning the deposits on the edges of the heating base reduces the utilization of semiconductor devices, and frequent cleaning can cause wear and tear on the heating base, reducing its lifespan. Summary of the Invention

[0005] This application provides a heating base and a semiconductor device that can solve the problems of existing heating bases requiring frequent cleaning of deposits and having a short service life, as well as the problems of existing semiconductor devices having low utilization rates.

[0006] To solve the above-mentioned technical problems, the first technical solution provided in this application is: to provide a heating base, comprising: a first support portion for supporting the object to be processed and for heating the object to be processed during thin film deposition; a second support portion, wherein at least a portion of the second support portion is disposed around the first support portion; wherein the second support portion is provided with a cooling device to cool the second support portion during thin film deposition of the object to be processed, thereby preventing process gases from reacting on the surface of the second support portion.

[0007] In one embodiment, the cooling device includes a cooling conduit through which a cooling substance flows.

[0008] In one embodiment, the second support portion is provided with a water inlet and a water outlet, and the cooling pipeline includes a water inlet pipeline, a heat exchange pipeline, and a water outlet pipeline; the water inlet pipeline connects the water inlet and the heat exchange pipeline; the heat exchange pipeline is disposed on the side wall of the second support portion, the heat exchange pipeline surrounds the first support portion and is close to the upper surface of the second support portion; the water outlet pipeline connects the water outlet and the heat exchange pipeline.

[0009] In one embodiment, the second support portion includes a base and an edge support portion, wherein the edge support portion is disposed at the edge of the base and extends from the edge of the base toward a side opposite to the lower bottom surface of the base, and the edge support portion surrounds the first support portion.

[0010] In one embodiment, a gap exists between the edge support portion and the first support portion, the gap being used to accommodate a heat insulation component.

[0011] In one embodiment, the material of the thermal insulation element includes at least one of ceramic, asbestos, and aerogel.

[0012] In one embodiment, a through hole is provided at the center of the base, and at least a portion of the lower surface of the first support portion is exposed through the through hole.

[0013] In one embodiment, a heating device is provided inside the first support portion, and the heating device is disposed near the upper surface of the first support portion.

[0014] In one embodiment, the first support portion includes a body portion and a protrusion portion, the protrusion portion being accommodated in the through hole; the heating device is connected to a power line disposed on the lower surface of the protrusion portion to connect to a power source through the power line.

[0015] In one embodiment, a temperature detection line is further provided on the lower surface of the protrusion, and the semiconductor device detects the temperature of the first carrier portion through the temperature detection line.

[0016] In one embodiment, at least one edge vent is provided on the side of the first support portion. The edge vent is close to the upper surface of the first support portion and extends to connect with the edge inlet provided on the lower bottom surface of the first support portion. Edge gas enters the first support portion through the edge inlet and exits from the edge vent to prevent process gas from reacting and depositing on the side of the object to be processed.

[0017] To solve the above-mentioned technical problems, the second technical solution provided by this application is: to provide a semiconductor device, including the heating base described in any one of the above-mentioned claims.

[0018] Unlike existing technologies, the heating base and semiconductor equipment provided in this application include a first support portion and a second support portion. Specifically, the first support portion is used to support the object to be processed and to heat the object to be processed during thin film deposition. At least a portion of the second support portion is arranged around the first support portion and spaced apart from it. The second support portion is provided with a cooling device to cool the second support portion during thin film deposition, preventing process gases from reacting on the surface of the second support portion and forming deposits. This solves the problem that the heating base needs to be cleaned of deposits frequently, which can easily cause wear and reduce its service life. This improves the service life of the heating base and increases the utilization rate of the semiconductor equipment. Attached Figure Description

[0019] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort, wherein:

[0020] Figure 1 A cross-sectional view of an embodiment of the heating base and the object to be processed provided in this application;

[0021] Figure 2 A cross-sectional view of another embodiment of the heating base and the object to be processed provided in this application;

[0022] Figure 3 A cross-sectional view of yet another embodiment of the heating base and the object to be processed provided in this application;

[0023] Figure 4 A cross-sectional view of an embodiment of the semiconductor device provided in this application;

[0024] Figure 5 A cross-sectional view of an embodiment of the heating base, transfer member, and object to be processed provided in this application. Detailed Implementation

[0025] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of the embodiments. Based on the embodiments of this application, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the scope of protection of this application.

[0026] The terms "first," "second," and "third" in this application are for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Therefore, a feature defined as "first," "second," or "third" may explicitly or implicitly include at least one of that feature. In the description of this application, "multiple" means at least two, such as two, three, etc., unless otherwise explicitly specified. All directional indications (such as up, down, left, right, front, back, etc.) in the embodiments of this application are only used to explain the relative positional relationships and movements between components in a specific orientation (as shown in the figures). If the specific orientation changes, the directional indications also change accordingly. Furthermore, the terms "comprising" and "having," and any variations thereof, are intended to cover non-exclusive inclusion. For example, a process, method, system, product, or device that includes a series of steps or units is not limited to the listed steps or units, but may optionally include steps or units not listed, or may optionally include other steps or units inherent to these processes, methods, products, or devices.

[0027] In this document, the term "embodiment" means that a particular feature, structure, or characteristic described in connection with an embodiment may be included in at least one embodiment of this application. The appearance of this phrase in various places throughout the specification does not necessarily refer to the same embodiment, nor is it a separate or alternative embodiment mutually exclusive with other embodiments. It will be explicitly and implicitly understood by those skilled in the art that the embodiments described herein can be combined with other embodiments.

[0028] The present application will now be described in detail with reference to the accompanying drawings and embodiments.

[0029] See Figure 1 , Figure 1 This is a cross-sectional view of an embodiment of the heating base and the object to be processed provided in this application. Specifically, the heating base 100 includes a first support portion 10 and a second support portion 20; the first support portion 10 is used to support the object to be processed 30 and to heat the object to be processed 30 during thin film deposition. The object to be processed 30 can be a wafer, a reconstructed wafer, or the like used for manufacturing semiconductor chips.

[0030] At least a portion of the second support portion 20 is disposed around the first support portion 10, and a cooling device 21 is also provided in the second support portion 20 so that when the workpiece 30 is subjected to thin film deposition or other processes that require cooling of the second support portion 20, the cooling device 21 cools the second support portion 20 to prevent the process gases from reacting on the surface of the second support portion 20 and forming deposits on the surface of the second support portion 20.

[0031] The cooling device 21 can be an air-cooling device, a liquid-cooling device, or a wind-cooling device. The cooling device 21 can also be a device that includes a phase change material. There is no limitation here, as long as it can cool the second support part 20.

[0032] Specifically, the heating base 100 provided in this application divides the originally integral heating base into two parts: a first support portion 10 and a second support portion 20 that at least partially surrounds the first support portion 10. The second support portion 20 is also provided with a cooling device 21. When the workpiece 30 is subjected to thin film deposition, the cooling device 21 can reduce the temperature on the second support portion 20, preventing process gases from reacting on the surface of the second support portion 20 and forming deposits. This solves the problem of the heating base 100 requiring frequent cleaning of deposits, which would otherwise affect the heating base 100 and the semiconductor device 200 using the heating base 100 (see [link to application]). Figure 4 This addresses the issue of reduced utilization of the heating base 100. Furthermore, the process of cleaning deposits can easily cause wear and tear on the heating base 100, reducing its service life. This application aims to improve the service life of the heating base 100 by reducing the cleaning frequency.

[0033] In one embodiment, the cooling device 21 is a liquid cooling device, which includes cooling pipes through which a cooling substance, either flowing or non-flowing, is introduced. The cooling substance can be water or a refrigerant, etc. During thin film deposition on the workpiece 30, the heat transferred from the first support portion 10 to the second support portion 20 is exchanged by the cooling substance, ensuring that the temperature of the second support portion 20 is lower than the reaction temperature of the process gas, thereby preventing the process gas from reacting and depositing on the surface of the second support portion 20.

[0034] See Figure 2 , Figure 2 This is a cross-sectional view of another embodiment of the heating base and the object to be processed provided in this application. In this embodiment, a cooling substance flows through the cooling pipes. Specifically, the second support portion 20 is provided with an inlet 22 and an outlet 23. The cooling substance can enter the cooling pipes through the inlet 22 and exit from the outlet 23. The cooling pipes include an inlet pipe 211, a heat exchange pipe 212, and an outlet pipe 213. The heat exchange pipe 212 is disposed on the side wall of the second support portion 20 and surrounds the first support portion 10. The two ends of the inlet pipe 211 are respectively connected to the inlet 22 and the heat exchange pipe 212, and the two ends of the outlet pipe 213 are respectively connected to the outlet 23 and the heat exchange pipe 212. Since the upper surface of the second support portion 20 is in contact with the process gas, the heat exchange pipe 212 is preferably extended close to the upper surface of the second support portion 20 for cooling and heat exchange of the upper surface of the second support portion 20.

[0035] The location of the inlet 22 and the outlet 23 is not limited. For example, the inlet 22 and the outlet 23 can both be located on the side wall of the second support part 20, or both can be located on the bottom wall of the second support part 20. Of course, one of the inlet 22 and the outlet 23 can be located on the side wall of the second support part 20, and the other can be located on the bottom wall of the second support part 20.

[0036] In one embodiment, the first support portion 10 is disposed within the space enclosed by the second support portion 20. Specifically, the second support portion 20 includes a base 24 and an edge support portion 25, wherein the edge support portion 25 is disposed at the edge of the base 24 and extends from the edge of the base 24 toward a side opposite to the lower bottom surface of the base 24, and the edge support portion 25 surrounds the first support portion 10. The base 24 serves as the bottom wall of the second support portion 20, and the edge support portion 25 serves as the side wall of the second support portion 20. Figure 2 As shown, the inlet 22 and outlet 23 are both located on the bottom surface of the bottom wall of the second support part 20, the inlet pipe 211 and outlet pipe 213 are located on the bottom wall of the second support part 20, and the heat exchange pipe 212 is located on the side wall of the second support part 20 and surrounds the first support part 10.

[0037] Among them, such as Figure 2 In the embodiment shown, the edge support portion 25 has an annular cavity inside, which extends from one end of the edge support portion 25 near the base 24 toward the upper surface near the edge support portion 25 to define and form a heat exchange pipe 212.

[0038] In another embodiment, the heat exchange pipe 212 is disposed on the edge support portion 25, and the heat exchange pipe 212 surrounds the first support portion 10 at least once. For example, the heat exchange pipe 212 includes a plurality of annular sub-heat exchange pipes, the plurality of sub-heat exchange pipes are connected, and each sub-heat exchange pipe is disposed around the first support portion 10, with at least one of the plurality of sub-heat exchange pipes disposed near the upper surface of the edge support portion 25. As another example, the heat exchange pipe 212 is arranged in a spiral shape, the spiral heat exchange pipe 212 is wound around the first support portion 10 at least once, and one end of the spiral heat exchange pipe 212 is disposed near the upper surface of the edge support portion 25.

[0039] The arrangement of the heat exchange pipe 212 is not limited, as long as it can cool the part of the second bearing part 20 that is in contact with the process gas. The specific design can be based on the actual situation.

[0040] In some embodiments, to prevent heat from the first support portion 10 from being transferred to the edge support portion 25 and to improve the heat insulation between the first support portion 10 and the edge support portion 25, a gap 11 is provided between the edge support portion 25 and the first support portion 10. The gap 11 can prevent the heat on the first support portion 10 from being directly transferred to the edge support portion 25 when the first support portion 10 heats the workpiece 30 to be processed, so that the temperature of the edge support portion 25 is too high and the process gas reacts on the upper surface of the edge support portion 25 and deposits to form deposits.

[0041] In one embodiment, the gap 11 is also used to accommodate the heat insulation member 50, and the width of the gap 11 is in the range of 1-5mm, so as to ensure that the heat insulation member accommodated in the gap 11 has a certain thickness and to ensure the heat insulation capability between the first bearing portion 10 and the edge bearing portion 25.

[0042] The material of the thermal insulation component 50 includes at least one of ceramic, asbestos, and aerogel. Of course, the material of the thermal insulation component 50 can also be other materials with thermal insulation properties, which will not be elaborated here.

[0043] In one embodiment, the first support portion 10 is further provided with related devices, such as a heating device (not shown) and a temperature detection device (not shown). The heating device is used to heat the object to be processed 30 supported on the first support portion 10, and the temperature detection device is used to detect the temperature on the first support portion 10 and / or the object to be processed 30, and transmit the detected temperature parameters to related devices, such as to the semiconductor device 200 or other controller that applies the heating base 100. The semiconductor device 200 or other controller then adjusts the heating power of the heating device according to the detected temperature parameters so that the temperature of the object to be processed 30 is within the target temperature range, thereby better realizing the thin film deposition on the object to be processed 30.

[0044] In one embodiment, at least one vacuum hole (not shown) is further provided on the upper surface of the first support portion 10, and the vacuum hole extends to the lower surface of the first support portion 10 to allow passage through a vacuum tube 133 (see figure) provided on the lower surface of the first support portion 10. Figure 3 It is connected to a vacuum device. When the object to be processed 30 is supported on the first support part 10, the vacuum hole is evacuated to adsorb the object to be processed 30 onto the upper surface of the first support part 10.

[0045] In one embodiment, at least one edge vent hole (not shown) is also provided on the side of the first support portion 10. The edge vent hole is close to the upper surface of the first support portion 10 and extends to connect to the edge air inlet hole 134 provided on the lower bottom surface of the first support portion 10 (see [reference]). Figure 3The edge gas enters the first bearing part 10 through the edge air inlet 134 and is discharged from the edge exhaust hole to purge the side of the object to be processed 30, so as to prevent the process gas from reacting and depositing on the side of the object to be processed 30, which would affect the product yield.

[0046] In this application, in order to improve the anti-deposition effect on the side of the object to be processed 30, multiple edge vent holes are provided, for example, 10, 15 or 20 edge vent holes, etc. Multiple edge vent holes are arranged evenly around the first bearing part 10 at intervals, and edge gas is evenly blown through multiple edge vent holes to the entire side of the object to be processed 30.

[0047] The edge gas can be an inert gas, such as argon or helium.

[0048] To facilitate electrical connection between the heating device, temperature detection device, and other related equipment, as well as the connection between the vacuum port, edge exhaust port, and other external pipelines, the second support part 20 is provided with through holes. The power cord of the heating device and the lead wire of the temperature detection device are electrically connected to other related equipment through the through holes, and the vacuum port and edge exhaust port are connected to external pipelines through the through holes. The through holes can be provided on the side wall (i.e., edge support part 25) or the bottom wall (i.e., base 24) of the second support part 20.

[0049] See Figure 3 , Figure 3 This is a cross-sectional view of another embodiment of the heating base and the object to be processed provided in this application. In this embodiment, a through hole 241 is provided at the center of the base 24, and the lower surface of the first support portion 10 is exposed through the through hole 241.

[0050] In one embodiment, the first support portion 10 includes a body portion 12 and a protrusion 13 extending from the body portion 12. The body portion 12 is disposed in the space formed by the edge support portion 25, and the protrusion 13 is accommodated in the through hole 241.

[0051] The heating device and the temperature detection device are disposed on the main body 12 and are located near the upper surface of the main body 12. The heating device is connected to the power supply via the power line 131 disposed on the lower surface of the connecting protrusion 13. A temperature detection line 132 is also disposed on the lower surface of the protrusion 13, and the temperature detection line 132 serves as the lead wire of the temperature detection device and is electrically connected to other related equipment.

[0052] The upper surface of the vacuum hole body 12 and the vacuum hole extend to the lower surface of the protrusion 13, so as to be connected to the vacuum pumping device through the vacuum tube 133 provided on the lower surface of the protrusion 13.

[0053] The edge exhaust port is provided on the side of the main body 12 and near the upper surface of the main body 12, and extends to the edge air inlet 134 provided on the lower bottom surface of the protrusion 13.

[0054] See Figure 4 , Figure 4 This is a cross-sectional view of an embodiment of the semiconductor device provided in this application. This application also provides a semiconductor device 200, which includes a heating base 100 provided in any of the above embodiments. Specifically, the semiconductor device 200 has a reaction chamber 201, and at least one heating base 100 is disposed at the bottom of the reaction chamber 201. During thin film deposition processing of the workpiece 30, a process gas is introduced into the reaction chamber 201, and the heating base 100 simultaneously heats the workpiece 30 to ensure that the temperature of the workpiece 30 is within a preset temperature range, thereby allowing the process gas to deposit a thin film on the surface of the workpiece 30.

[0055] The specific process gas can be selected according to actual conditions to deposit the corresponding thin film at high temperature. For example, when depositing a tungsten film on the surface of the object to be processed 30, the process gas can be tungsten hexafluoride (WF6), hydrogen (H2), or diborane (B2H6). The prepared gas reacts and deposits the tungsten film on the surface of the object to be processed 30 at high temperature. As another example, when depositing a silicon film on the surface of the object to be processed 30, the process gas can be silicon chloride (SiCl4) and hydrogen (H2). The prepared gas reacts and deposits the silicon film on the surface of the object to be processed 30 at high temperature.

[0056] See Figure 4 and Figure 5 , Figure 5 This is a cross-sectional view of an embodiment of the heating base, transfer member, and workpiece provided in this application. In one embodiment, the semiconductor device 200 includes a plurality of heating bases 100, and during the thin film deposition process, the workpiece 30 needs to be transferred from one of the heating bases 100 to another. Therefore, the semiconductor device 200 also includes a transfer member 40 for transferring the workpiece 30, and a second support portion 20 is also used to support the transfer member 40. The transfer member 40 includes a transfer body 41 and a limiting portion 42. Specifically, when the workpiece 30 is subjected to thin film deposition, the transfer body 41 is at least partially supported on the upper surface of the second support portion 20, and the limiting portion 42 is disposed on the surface of the transfer body 41 near the second support portion 20, and extends to the edge of the lower surface of the workpiece 30, for hooking the workpiece 30 from the lower surface of the workpiece 30 and transferring it to another heating base 100 during the transfer process.

[0057] In one embodiment, the limiting part 42 is hook-shaped and there are multiple such parts, such as 3 or 5. The multiple limiting parts 42 are evenly and spaced apart on the surface of the transfer member 40 near the second bearing part 20 to ensure that the object to be processed 40 is subjected to uniform force during the transfer process.

[0058] In one embodiment, the transfer member 40 further includes an extension 43 that extends to the edge of the upper surface of the object to be processed 30, so as to protect the object to be processed 30 when it is supported by the first support part 10 or when it is transferred, and prevent the object to be processed 30 from falling off the transfer member 40 during the transfer process, thereby causing damage to the object to be processed 30.

[0059] Understandably, during thin film deposition on the workpiece 30, since the transfer member 40 is at least partially attached to the surface of the second support portion 20, the cooling device 21 cools both the second support portion 20 and the transfer member 40 simultaneously to prevent process gases from reacting on the surface of the transfer member 40 and forming deposits. This solves the problem of frequent deposit cleaning of the transfer member 40, which reduces the utilization rate of both the transfer member 40 and the semiconductor device 200 using it. Furthermore, the deposit cleaning process can easily cause wear and tear on the transfer member 40, reducing its service life. This application improves the service life of the transfer member 40 by reducing the cleaning frequency.

[0060] Since the extension 43 of the transfer member 40 extends to the edge of the upper surface of the object to be processed 30, the amount of process gas involved in the reaction at the edge of the upper surface of the object to be processed 30 is small when thin film deposition is performed on the object to be processed 30, resulting in insufficient thin film deposition at the edge of the object to be processed 30 and affecting the product yield. In order to solve the above problem, in one embodiment, there is a gap 44 between the extension 43 and the object to be processed 30, and the edge gas also contains a portion of process gas, so as to compensate for the process gas at the edge of the upper surface of the object to be processed 30 during the thin film deposition process.

[0061] The gap 44 between the extension 43 and the workpiece 30 is in the range of 0.05-0.08 mm. It can be selected according to actual needs.

[0062] Unlike existing technologies, the heating base 100 and semiconductor device 200 provided in this application divide the originally integrated heating base into two parts: a first support portion 10 and a second support portion 20 that at least partially surrounds the first support portion 10. The second support portion 20 is also provided with a cooling device 21. When the workpiece 30 is subjected to thin film deposition, the cooling device 21 can reduce the temperature on the second support portion 20, preventing process gases from reacting on the surface of the second support portion 20 and / or the surface of the transfer member 40 supported on the surface of the second support portion 20, thereby preventing the formation of deposits on the surface of the second support portion 20 and / or the transfer member 40. This solves the problem that the heating base 100 and the transfer member 40 need to be cleaned of deposits frequently, which can easily cause wear and tear and reduce their service life. This improves the service life of the heating base 100 and the transfer member 40 and increases the utilization rate of the semiconductor device 200. In addition, this application also provides a gap 11 between the first support portion 10 and the edge support portion 25 of the second support portion 20. The gap 11 is used to accommodate the heat insulation member 50 to improve the heat insulation capacity between the first support portion 10 and the edge support portion 25 and reduce the heat transfer from the first support portion 10 to the edge support portion 25.

[0063] The above are merely embodiments of this application and do not limit the scope of this patent application. Any equivalent structural or procedural changes made using the content of this application's specification and drawings, or direct or indirect applications in other related technical fields, are similarly included within the scope of patent protection of this application.

Claims

1. A heating base applied to a semiconductor apparatus, characterized by, include: The first support portion is used to support the object to be processed and to heat the object to be processed during thin film deposition. A second support portion, wherein at least a portion of the second support portion is disposed around the first support portion; and the second support portion is also used to support a transfer member, the transfer member being used to transfer the object to be processed; The second support portion is provided with a cooling device to cool down the second support portion and the transfer member when performing thin film deposition on the object to be processed, so as to prevent the process gas from reacting on the surface of the second support portion and the surface of the transfer member. The first support portion is further provided with a temperature detection device, which is used to detect the temperature of the first support portion and / or the object to be processed.

2. The heating base according to claim 1, characterized in that, The cooling device includes cooling pipes through which a cooling substance flows.

3. The heating base according to claim 2, characterized in that, The second support part is provided with a water inlet and a water outlet, and the cooling pipeline includes a water inlet pipeline, a heat exchange pipeline and a water outlet pipeline; The water inlet pipe connects the water inlet and the heat exchange pipe; The heat exchange pipeline is disposed on the side wall of the second support part, and the heat exchange pipeline surrounds the first support part and is close to the upper surface of the second support part; The water outlet pipe connects the water outlet and the heat exchange pipe.

4. The heating base according to claim 1, characterized in that, The second support portion includes a base and an edge support portion, wherein the edge support portion is disposed at the edge of the base and extends from the edge of the base toward a side opposite to the lower bottom surface of the base, and the edge support portion surrounds the first support portion.

5. The heating base according to claim 4, characterized in that, There is a gap between the edge support portion and the first support portion, and the gap is used to accommodate the heat insulation component.

6. The heating base according to claim 5, characterized in that, The material of the thermal insulation component includes at least one of ceramic, asbestos, and aerogel.

7. The heating base according to claim 4, characterized in that, A through hole is provided at the center of the base, and at least a portion of the lower surface of the first support portion is exposed through the through hole.

8. The heating base according to claim 7, characterized in that, A heating device is provided inside the first support portion, and the heating device is located near the upper surface of the first support portion.

9. The heating base according to claim 8, characterized in that, The first support portion includes a body portion and a protrusion portion, the protrusion portion being accommodated in the through hole; the heating device is connected to a power line disposed on the lower surface of the protrusion portion, so as to be connected to a power source through the power line.

10. The heating base according to claim 7, characterized in that, At least one edge vent is provided on the side of the first support portion. The edge vent is close to the upper surface of the first support portion and extends to connect with the edge inlet provided on the lower bottom surface of the first support portion. Edge gas enters the first support portion through the edge inlet and exits from the edge vent to prevent process gas from reacting and depositing on the side of the object to be processed.

11. A semiconductor device, characterized in that, include: The heating base as described in any one of claims 1-10; The transfer member is used to transfer the object to be processed, and the second carrier part is also used to carry the transfer member.

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