Graphite susceptor and metal organic chemical vapor deposition equipment

Abstract

The present disclosure provides a graphite base and metal organic chemical vapor deposition equipment, which belong to the field of semiconductor technology. The graphite base includes: a base body, a plurality of circular grooves and a plurality of flow field control components. The base body is a disc-shaped structure; the plurality of circular grooves are all located on one side of the base body, and the center of each circular groove is distributed on at least two circular tracks, and the circular tracks are concentric with the base body; the plurality of flow field control components correspond to the circular grooves one by one, and each flow field control component is arranged around the corresponding circular groove to control the flow field at the corresponding circular groove. The present disclosure can control the flow field of the precursor gas, thereby having high-quality epitaxial growth, so that the epitaxial layer has good consistency.

Description

Technical Field

[0001] The present disclosure relates to the field of semiconductor technology, and in particular to a graphite susceptor and a metal organic chemical vapor deposition device. Background Art

[0002] An LED (Light Emitting Diode) is a semiconductor diode that converts electrical energy into light. LEDs are energy-efficient and environmentally friendly, making them widely used in applications such as traffic signs and outdoor full-color displays. To manufacture an LED, an epitaxial layer is first grown on a substrate to form an LED epitaxial wafer. Electrodes are then placed on the wafer, and the wafer is cut to produce at least two independent LED chips. Finally, the LED chips are packaged to form the LED.

[0003] In related technologies, epitaxial growth is performed within the reaction chamber of a metal organic chemical vapor deposition (MOCVD) device. The MOCVD reaction chamber houses a graphite susceptor, which includes a main body and multiple circular pockets for accommodating the substrate. During epitaxial growth, precursor gases are introduced into the reaction chamber to grow an epitaxial layer on the substrate.

[0004] However, the graphite base cannot control the precursor gas flow field at each circular groove, resulting in poor consistency of the generated epitaxial layer. Summary of the Invention

[0005] The present disclosure provides a graphite susceptor and metal organic chemical vapor deposition equipment that can control the flow field of the precursor gas, thereby achieving high-quality epitaxial growth and ensuring good consistency of the epitaxial layer. The technical solution is as follows:

[0006] In one aspect, an embodiment of the present disclosure provides a graphite susceptor, comprising:

[0007] The main body of the base is a disc-shaped structure;

[0008] A plurality of circular grooves are located on a side surface of the base body, and the center of each circular groove is distributed on at least two circular tracks, and the circular tracks are concentric with the base body;

[0009] A plurality of flow field regulating components correspond to the circular grooves one by one, and each flow field regulating component is arranged around the corresponding circular groove to regulate the flow field at the corresponding circular groove.

[0010] In one implementation of the present disclosure, the flow field regulating component includes a plurality of protrusions;

[0011] The protrusions are arranged at intervals along the circumferential direction of the outer edge of the corresponding circular groove.

[0012] In one implementation of the present disclosure, the protrusion is a bushing-shaped structural member;

[0013] Each of the protrusions is concentric with the corresponding circular groove.

[0014] In one implementation of the present disclosure, the circular slot includes a windward side and a leeward side;

[0015] The diameter of the circular groove passing through the center of the base body is used as a reference diameter, and the windward side and the leeward side are respectively located on opposite sides of the reference diameter;

[0016] The height of the protrusion located on the windward side perpendicular to the base body is higher than the height of the protrusion located on the leeward side perpendicular to the base body.

[0017] In an implementation of the present disclosure, the height of the protrusion perpendicular to the base body gradually increases in the direction from the windward side to the leeward side.

[0018] In an implementation of the present disclosure, the distance between the protrusion and the outer edge of the circular groove is 1 mm-10 mm.

[0019] In an implementation of the present disclosure, the distance between two adjacent protrusions is 1 mm to 5 mm.

[0020] In one implementation of the present disclosure, the height of the protrusion perpendicular to the base body is 400um-800um.

[0021] In one implementation of the present disclosure, a SiC thin film layer is applied on the surface of the base body.

[0022] On the other hand, an embodiment of the present disclosure further provides a metal organic chemical vapor deposition device, including: the graphite base described above.

[0023] The beneficial effects of the technical solutions provided by the embodiments of the present disclosure include at least:

[0024] When epitaxial wafers are produced using the graphite susceptor provided by the embodiments of the present disclosure, the graphite susceptor is applied to a metal organic chemical vapor deposition apparatus. The circular groove is used to place the substrate, thereby providing a foundation for the growth of the epitaxial layer. During the production process, the precursor gas flows to the flow field control component. The flow field control component can control the flow field at the corresponding circular groove, thereby achieving high-quality epitaxial growth on the substrate within the circular groove, and thus ensuring good consistency of the grown epitaxial layer.

[0025] That is to say, by setting flow field control components around the circular groove, the flow field at the corresponding circular groove is controlled by the flow field control components, so that high-quality epitaxial growth can be achieved on the substrate in the circular groove, and the grown epitaxial layer can have good consistency. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] In order to more clearly illustrate the technical solutions in the embodiments of the present disclosure, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present disclosure. For ordinary technicians in this field, other drawings can be obtained based on these drawings without any creative work.

[0027] Figure 1 is a schematic structural diagram of a graphite base provided in an embodiment of the present disclosure;

[0028] Figure 2 Schematic diagram of the arrangement of the flow field control assembly provided in an embodiment of the present disclosure;

[0029] Figure 3 The embodiment of the present disclosure provides Figure 2 Bottom view of

[0030] Figure 4 It is a structural schematic diagram of the metal organic chemical vapor deposition equipment provided in an embodiment of the present disclosure.

[0031] The following is an example:

[0032] 10. Base body;

[0033] 20. Circular groove;

[0034] 210, circular trajectory; 220, windward side; 230, leeward side; 240, reference diameter;

[0035] 30. Flow field control component;

[0036] 310, bulge;

[0037] 100, graphite base;

[0038] 200, reaction chamber;

[0039] 300, driving mechanism;

[0040] 400, air supply assembly;

[0041] 500. Heating module. DETAILED DESCRIPTION

[0042] In order to make the objectives, technical solutions and advantages of the present disclosure more clear, the embodiments of the present disclosure will be further described in detail below with reference to the accompanying drawings.

[0043] An LED (Light Emitting Diode) is a semiconductor diode that converts electrical energy into light. LEDs are energy-efficient and environmentally friendly, making them widely used in applications such as traffic signs and outdoor full-color displays. To manufacture an LED, an epitaxial layer is first grown on a substrate to form an LED epitaxial wafer. Electrodes are then placed on the wafer, and the wafer is cut to produce at least two independent LED chips. Finally, the LED chips are packaged to form the LED.

[0044] In related technologies, epitaxial growth is performed within the reaction chamber of a metal organic chemical vapor deposition (MOCVD) device. The MOCVD reaction chamber houses a graphite susceptor, which includes a main body and multiple circular pockets for accommodating the substrate. During epitaxial growth, precursor gases are introduced into the reaction chamber to grow an epitaxial layer on the substrate.

[0045] However, the graphite base cannot control the precursor gas flow field at each circular groove, resulting in poor consistency of the generated epitaxial layer.

[0046] In order to solve the above technical problems, the present disclosure provides a graphite base. Figure 1 is a structural diagram of the graphite base, see Figure 1 In this embodiment, the graphite susceptor includes a susceptor body 10, a plurality of circular grooves 20, and a plurality of flow field control components 30. The susceptor body 10 is a disc-shaped structure. The plurality of circular grooves 20 are all located on one side of the susceptor body 10, and the centers of the circular grooves 20 are distributed on at least two circular tracks 210. The circular tracks 210 are concentric with the susceptor body 10. The plurality of flow field control components 30 correspond to the circular grooves 20 one by one. Each flow field control component 30 is arranged around the corresponding circular groove 20 to control the flow field at the corresponding circular groove 20.

[0047] It should be noted that, for the sake of brevity, Figure 1 In the figure, the flow field regulating assembly 30 is schematically provided around only one circular groove 20 , but the flow field regulating assembly 30 is not limited to be provided around only one circular groove 20 .

[0048] When epitaxial wafers are produced using the graphite susceptor provided in the embodiments of the present disclosure, the graphite susceptor is applied to a metal organic chemical vapor deposition apparatus. The circular groove 20 is used to place the substrate, thereby providing a foundation for the growth of the epitaxial layer. During the production process, the precursor gas flows to the flow field control assembly 30. The flow field control assembly 30 can control the flow field at the corresponding circular groove 20, thereby achieving high-quality epitaxial growth on the substrate within the circular groove 20, and thus ensuring good consistency of the grown epitaxial layer.

[0049] That is to say, by setting a flow field control component 30 around the circular groove 20, the flow field at the corresponding circular groove 20 is controlled by the flow field control component 30, so that high-quality epitaxial growth can be achieved on the substrate in the circular groove 20, and the grown epitaxial layer can have good consistency.

[0050] As can be seen from the foregoing, the flow field control component 30 plays a key role in achieving high-quality epitaxial growth. The flow field control component 30 is introduced below.

[0051] Figure 2 is a schematic diagram of the arrangement of the flow field control component 30, Figure 2 Perspective and Figure 1 The same perspective, combined Figure 2 In this embodiment, the flow field regulating component 30 includes a plurality of protrusions 310 , and each protrusion 310 is arranged at intervals along the circumferential direction of the outer edge of the corresponding circular groove 20 .

[0052] Since the protrusions 310 are arranged circumferentially along the outer edge of the circular groove 20 , part of the precursor gas can flow directly into the circular groove 20 from above each protrusion 310 , while the other part of the precursor gas flows into the circular groove 20 from the gap between two adjacent protrusions 310 .

[0053] Because the graphite base rotates at high speed, the precursor gas quickly flows away from the surface of the graphite base. Furthermore, in the radial direction of the graphite base, the flow rate increases as it approaches the outer edge. However, because the protrusions 310 are arranged circumferentially and spaced apart along the outer edge of the circular groove 20, the precursor gas entering the circular groove 20 can remain within the circular groove 20 for a long time under the protection of the protrusions 310, thereby facilitating high-quality epitaxial growth.

[0054] Continue to see Figure 2 , illustratively, the protrusion 310 is a bearing-shaped structural member, and each protrusion 310 is concentric with the corresponding circular groove 20.

[0055] In the above implementation, the protrusions 310 are designed as bearing-shaped structural members, which can reduce wind resistance on the sides of the protrusions 310 and facilitate the flow of precursor gas into the circular groove 20 from the gap between two adjacent protrusions 310. Furthermore, because the protrusions 310 are concentric with the corresponding circular groove 20, the inner concave surface of the protrusions 310 faces the circular groove 20, effectively storing and retaining the precursor gas. Correspondingly, the outer convex surface of the protrusions 310 faces away from the circular groove 20, effectively reducing wind resistance.

[0056] Of course, in other embodiments, the protrusion 310 can also be in other shapes, such as a rectangular plate-shaped structure, a triangular plate-shaped structure, etc., and the present disclosure does not limit this.

[0057] In some examples, the distance between the protrusion 310 and the outer edge of the circular groove 20 is 1 mm to 10 mm.

[0058] It should be noted that the distance between the protrusion 310 and the outer edge of the circular groove 20 refers to the radial distance between the inner concave surface of the protrusion 310 and the outer edge of the circular groove 20 .

[0059] Designing the distance between the protrusion 310 and the outer edge of the circular groove 20 to the above value can ensure that sufficient precursor gas enters the circular groove 20 and that the precursor gas stays in the circular groove 20 for a long time, thereby facilitating high-quality epitaxial growth.

[0060] Furthermore, through experiments, it was found that after the distance between the protrusion 310 and the outer edge of the circular groove 20 was designed to be the above value, the thickness and doping uniformity of the grown epitaxial wafer could be increased by 15%-30% respectively.

[0061] In this embodiment, the plurality of protrusions 310 are equidistantly arranged along the circumference of the outer edge of the corresponding circular groove 20 , that is, the distance between two adjacent protrusions 310 is equal.

[0062] In some examples, the distance between two adjacent protrusions 310 is 1 mm to 5 mm.

[0063] It should be noted that the distance between two adjacent protrusions 310 refers to the length of the arc-shaped line between the side edges of the two adjacent protrusions 310 , and the arc-shaped line is concentric with the circular groove 20 .

[0064] Designing the distance between two adjacent protrusions 310 to the above value can ensure that sufficient precursor gas enters the circular groove 20 and that the precursor gas stays in the circular groove 20 for a long time, thereby facilitating high-quality epitaxial growth.

[0065] Of course, in other embodiments, the distance between two adjacent protrusions 310 may also be unequal according to actual needs, but the distance between two adjacent protrusions 310 is still 1 mm-5 mm, and the present disclosure does not impose any limitation on this.

[0066] When epitaxial wafers are fabricated using the graphite susceptor provided by the embodiments of the present disclosure, the graphite susceptor rotates at high speed. This causes the circular groove 20 to have a windward side 220 and a leeward side 230 . The windward side 220 refers to the side of the circular groove 20 facing the precursor gas when the graphite susceptor rotates, while the leeward side 230 refers to the other side of the circular groove 20 .

[0067] The diameter of the circular groove 20 passing through the center of the base body 10 is taken as the reference diameter 240, and the windward side 220 and the leeward side 230 are located on opposite sides of the reference diameter 240. For example, if the circular groove 20 is along the base body 10 Figure 2 If the circular groove 20 rotates in the direction of the solid arrow in FIG, the windward side 220 is on the right side of the reference diameter 240, and the leeward side 230 is on the left side of the reference diameter 240. On the contrary, if the circular groove 20 rotates along the base body 10 Figure 2 If the diameter 240 is rotated in the direction of the dotted arrow, the windward side 220 is the left side of the reference diameter 240 and the leeward side 230 is the right side of the reference diameter 240 .

[0068] Figure 3 for Figure 2 Bottom view, combined with Figure 3 In this embodiment, the height of the protrusion 310 located on the windward side 220 perpendicular to the base body 10 is lower than the height of the protrusion 310 located on the leeward side 230 perpendicular to the base body 10 .

[0069] In the above implementation, the height of the protrusion 310 on the windward side 220 perpendicular to the base body 10 is designed to be relatively low, which can facilitate the entry of the precursor gas into the circular groove 20. The height of the protrusion 310 on the leeward side 230 perpendicular to the base body 10 is designed to be relatively high, which can facilitate the retention of the precursor gas in the circular groove 20 for a long time, thereby facilitating high-quality epitaxial growth.

[0070] Of course, in other embodiments, the height of protrusion 310 perpendicular to base body 10 can also be adjusted based on actual needs. For example, considering the differences in thickness and component doping during epitaxial growth, an appropriate height can be designed based on simulation and practice of flow fields. This disclosure is not limited to this.

[0071] In some examples, a height of the protrusion 310 perpendicular to the base body 10 gradually increases from the windward side 220 to the leeward side 230 .

[0072] In the above implementation, the height of the protrusion 310 perpendicular to the base body 10 can change smoothly, which is conducive to the control of the local flow field.

[0073] For example, in the direction from the windward side 220 to the leeward side 230 , the height of the protrusion 310 perpendicular to the base body 10 can increase linearly or exponentially, and the present disclosure does not limit this.

[0074] In some examples, the height of the protrusion 310 perpendicular to the base body 10 is 400 μm-800 μm.

[0075] Designing the height of the protrusion 310 perpendicular to the base body 10 within the above range ensures sufficient precursor gas enters the circular groove 20 and maintains the precursor gas within the circular groove 20 for a long period of time, thereby facilitating high-quality epitaxial growth. In other words, even if the height of the protrusion 310 perpendicular to the base body 10 gradually changes, its height will not exceed 400-800 μm.

[0076] Furthermore, through experiments, it was found that after the height of the protrusion 310 perpendicular to the base body 10 was designed to be the above value, the thickness and doping uniformity of the grown epitaxial wafer could be increased by 15%-30% respectively.

[0077] In this embodiment, the base body 10 is a high-purity graphite material structural component.

[0078] Exemplarily, the base body 10 is made of high-purity graphite material by sintering or pressing.

[0079] In some examples, a SiC thin film layer is applied on the surface of the base body 10 .

[0080] The SiC thin film layer is a protective layer formed by direct bonding of silicon and carbon, released by special gases under high temperature conditions, thus enveloping the base body 10. The SiC thin film layer firmly covers the base body 10, endowing it with special properties, resulting in a dense, pore-free surface, high-temperature resistance, corrosion resistance, and oxidation resistance.

[0081] Exemplarily, the thickness of the SiC thin film layer is 80-200 μm.

[0082] Designing the thickness of the SiC thin film layer to the above value can ensure the functionality of the SiC thin film layer without affecting the thermal conductivity to the substrate.

[0083] Of course, in other embodiments, the thickness of the SiC thin film layer can be adjusted according to actual needs, and the present disclosure does not limit this.

[0084] In some examples, the size of the circular groove 20 is 2 inches to 12 inches. Accordingly, the substrate is an insulating substrate such as sapphire, silicon carbide, gallium oxide, diamond, etc., and can be 2 inches or larger. Furthermore, the substrate can be either a flat substrate or a patterned substrate.

[0085] As an example, in the embodiments of the present disclosure, the substrate is a sapphire substrate. Sapphire substrate is a commonly used substrate with mature technology and low cost. Specifically, it can be a patterned sapphire substrate or a sapphire flat sheet substrate.

[0086] Figure 4 A schematic diagram of the structure of a metal organic chemical vapor deposition device provided in an embodiment of the present disclosure, combined with Figure 4 In this embodiment, the metal organic chemical vapor deposition equipment includes Figure 1-3 The graphite susceptor 100 shown in FIG. The graphite susceptor 100 comprises a susceptor body 10, a plurality of circular grooves 20, and a plurality of flow field control components 30. The susceptor body 10 is a disc-shaped structure, with the plurality of circular grooves 20 located on one side of the susceptor body 10. The centers of the circular grooves 20 are distributed on at least two circular trajectories 210, which are concentric with the susceptor body 10. The plurality of flow field control components 30 correspond one-to-one to the circular grooves 20, and each flow field control component 30 is disposed around a corresponding circular groove 20 to control the flow field at the corresponding circular groove 20.

[0087] When epitaxial wafers are fabricated using the metal organic chemical vapor deposition apparatus provided by the embodiments of the present disclosure, circular grooves 20 are used to position the substrate, thereby providing a foundation for the growth of the epitaxial layer. During the fabrication process, the graphite base 100 rotates, and the precursor gas flows to the flow field control assembly 30. The flow field control assembly 30 can regulate the flow field at the corresponding circular groove 20, thereby achieving high-quality epitaxial growth on the substrate within the circular groove 20, and thus ensuring good consistency of the grown epitaxial layer.

[0088] That is to say, by setting a flow field control component 30 around the circular groove 20, the flow field at the corresponding circular groove 20 is controlled by the flow field control component 30, so that high-quality epitaxial growth can be achieved on the substrate in the circular groove 20, and the grown epitaxial layer can have good consistency.

[0089] Continue to see Figure 4 In this embodiment, the metal organic chemical vapor deposition equipment includes a reaction chamber 200 , a driving mechanism 300 and a gas supply component 400 .

[0090] The graphite susceptor 100 and the gas supply assembly 400 are both located within the reaction chamber 200, with the graphite susceptor 100 located at the bottom of the reaction chamber 200 and the gas supply assembly 400 located at the top of the reaction chamber 200. The circular groove 20 of the graphite susceptor 100 and the gas supply assembly 400 are arranged opposite each other. A portion of the drive mechanism 300 is located outside the reaction chamber 200, while the other portion is located within the reaction chamber 200 and is in driving connection with the graphite susceptor 100.

[0091] When epitaxial wafers are produced using the metal organic chemical vapor deposition apparatus provided in the embodiments of the present disclosure, the drive mechanism 300 rotates the graphite susceptor 100. Precursor gas enters the reaction chamber 200 through the gas delivery assembly 400 and gradually flows to the circular grooves 20 and the flow field control assembly 30. The flow field control assembly 30 regulates the flow field at the corresponding circular grooves 20, thereby achieving high-quality epitaxial growth on the substrate within the circular grooves 20 and, in turn, ensuring good consistency of the grown epitaxial layer.

[0092] That is to say, by setting a flow field control component 30 around the circular groove 20, the flow field at the corresponding circular groove 20 is controlled by the flow field control component 30, so that high-quality epitaxial growth can be achieved on the substrate in the circular groove 20, and the grown epitaxial layer can have good consistency.

[0093] In this embodiment, the driving mechanism 300 includes a motor and a rotating shaft. The motor is located outside the reaction chamber 200. One end of the rotating shaft is connected to the motor, and the other end of the rotating shaft passes through the reaction chamber 200 and is coaxially connected to the graphite base 100.

[0094] The motor drives the rotating shaft to rotate, thereby driving the graphite base 100 .

[0095] In this embodiment, the metal organic chemical vapor deposition apparatus further includes a heating module 500 . The heating module 500 is located on a side of the graphite susceptor 100 that is away from the gas supply assembly 400 .

[0096] In the above implementation, the graphite susceptor 100 can be heated by the heating module 500 , thereby facilitating the growth of the epitaxial wafer.

[0097] For example, according to actual needs, the heating module 500 can be heated by a heating wire or by radio frequency, and the present disclosure does not limit this.

[0098] Unless otherwise defined, the technical or scientific terms used herein shall have the ordinary meaning understood by persons of ordinary skill in the field to which the present disclosure belongs. The words “first”, “second”, “third” and similar terms used in the patent application specification and claims of the present disclosure do not indicate any order, quantity or importance, but are only used to distinguish different components. Similarly, words such as “a” or “an” do not indicate a quantity limitation, but rather indicate the presence of at least one. Words such as “include” or “comprise” mean that the elements or objects appearing before “include” or “comprises” include the elements or objects listed after “include” or “comprises” and their equivalents, and do not exclude other elements or objects. Words such as “connect” or “connected” are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. “Up”, “down”, “left”, “right” and the like are only used to indicate relative positional relationships. When the absolute position of the described object changes, the relative positional relationship may also change accordingly.

[0099] The above description is merely an optional embodiment of the present disclosure and is not intended to limit the present disclosure. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principles of the present disclosure shall be included in the scope of protection of the present disclosure.

Claims

1. A graphite base, characterized in that: include: The base body (10) is a disc-shaped structure; A plurality of circular grooves (20) are all located on a side surface of the base body (10), and the center of each circular groove (20) is distributed on at least two circular tracks (210), and the circular tracks (210) are concentric with the base body (10); A plurality of flow field regulating components (30) correspond to the circular grooves (20) one by one, each of the flow field regulating components (30) is arranged around the corresponding circular groove (20) to regulate the flow field at the corresponding circular groove (20), the flow field regulating component (30) includes a plurality of protrusions (310), each of the protrusions (310) is arranged at intervals along the circumferential edge of the corresponding circular groove (20), the distance between the protrusion (310) and the outer edge of the circular groove (20) is 1 mm to 10 mm, the distance between two adjacent protrusions (310) is 1 mm to 5 mm, and the height of the protrusion (310) perpendicular to the base body (10) is 400 μm to 800 μm.

2. The graphite susceptor according to claim 1, characterized in that: The protrusion (310) is a bearing-shaped structural member; Each of the protrusions (310) is concentric with the corresponding circular groove (20).

3. The graphite susceptor according to claim 1, characterized in that: The circular groove (20) includes a windward side (220) and a leeward side (230); The diameter of the circular groove (20) passing through the center of the base body (10) is used as a reference diameter (240), and the windward side (220) and the leeward side (230) are respectively located on opposite sides of the reference diameter (240); The height of the protrusion (310) located on the windward side (220) perpendicular to the base body (10) is lower than the height of the protrusion (310) located on the leeward side (230) perpendicular to the base body (10).

4. The graphite susceptor according to claim 3, characterized in that: In the direction from the windward side (220) to the leeward side (230), the height of the protrusion (310) perpendicular to the base body (10) gradually increases.

5. The graphite susceptor according to any one of claims 1 to 4, characterized in that: A SiC film layer is applied on the surface of the base body (10).

6. A metal organic chemical vapor deposition device, characterized in that: include: The graphite susceptor according to any one of claims 1 to 5.

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