Chamber cover and metal organic chemical vapor deposition equipment

Abstract

The present disclosure provides a chamber cover and metal organic chemical vapor deposition equipment, belonging to the field of semiconductor technology. The chamber cover comprises an outer ring portion, an inner ring portion, and a drive portion. The outer ring portion comprises multiple external MO source pipes and multiple external carrier pipes; the inner ring portion is located within the outer ring portion and arranged concentrically with the outer ring portion, and comprises multiple internal MO source pipes and multiple internal carrier pipes; the drive portion is connected to the inner ring portion and is used to drive the inner ring portion to rotate. The present disclosure can solve the problem of uneven MO source concentration distribution.

Description

Technical Field

[0001] The present disclosure relates to the field of semiconductor technology, and in particular to a cavity cover and a metal organic chemical vapor deposition device. Background Art

[0002] An LED (Light Emitting Diode) is a semiconductor diode that converts electrical energy into light. LEDs are energy-efficient and environmentally friendly, making them widely used in applications such as traffic signs and outdoor full-color displays. To manufacture an LED, an epitaxial layer is first grown on a substrate to form an LED epitaxial wafer. Electrodes are then placed on the wafer, and the wafer is cut to produce at least two independent LED chips. Finally, the LED chips are packaged to form the LED.

[0003] In related art, epitaxial growth is performed within the reaction chamber of a metal organic chemical vapor deposition (MOCVD) device. The MOCVD reaction chamber has a chamber cover and houses a graphite susceptor. The susceptor comprises a main body and multiple circular pockets for receiving the substrate. During epitaxial growth, a precursor is introduced into the reaction chamber to grow an epitaxial layer on the substrate.

[0004] However, due to the high-speed rotation of the graphite base, the precursor flow rate at the outer edge is faster, while the precursor at the center is delayed, resulting in uneven concentration distribution of the precursor. Summary of the Invention

[0005] The present disclosure provides a chamber cover and metal organic chemical vapor deposition equipment that can solve the problem of uneven concentration distribution of MO source. The technical solution is as follows:

[0006] In one aspect, an embodiment of the present disclosure provides a cavity cover, comprising:

[0007] The outer ring portion has a plurality of external MO source pipes and a plurality of external carrier pipes;

[0008] an inner ring portion, located inside the outer ring portion and arranged concentrically with the outer ring portion, the inner ring portion having a plurality of inner MO source pipes and a plurality of inner carrier pipes;

[0009] The driving portion is connected to the inner ring portion and is used to drive the inner ring portion to rotate.

[0010] In one implementation of the present disclosure, multiple external MO source pipes and multiple external carrier pipes all extend radially along the outer ring portion, and the multiple external MO source pipes and multiple external carrier pipes are alternately arranged around the center circumference of the outer ring portion.

[0011] In another implementation of the present disclosure, the outer ring portion includes a first outer ring and a second outer ring;

[0012] The first outer ring is located inside the second outer ring, and the first outer ring and the second outer ring are arranged concentrically;

[0013] One end of multiple external MO source pipes is connected to the first outer ring, and the other end of multiple external MO source pipes is connected to the second outer ring. One end of multiple external carrier pipes is connected to the first outer ring, and the other end of multiple external carrier pipes is connected to the second outer ring.

[0014] In another embodiment of the present disclosure, multiple inner MO source pipes and multiple inner carrier pipes all extend radially along the inner ring portion, and the multiple inner MO source pipes and multiple inner carrier pipes are alternately arranged around the center circumference of the inner ring portion.

[0015] In yet another implementation of the present disclosure, the inner ring portion includes a first inner ring and a second inner ring;

[0016] The first inner ring is located inside the second inner ring, and the first inner ring and the second inner ring are arranged concentrically;

[0017] One end of multiple internal MO source pipes is connected to the first inner ring, and the other end of multiple internal MO source pipes is connected to the second inner ring. One end of multiple internal carrier pipes is connected to the first inner ring, and the other end of multiple internal carrier pipes is connected to the second inner ring.

[0018] In yet another implementation of the present disclosure, a distance between the center of the first inner ring and the center of the second inner ring is 5 to 15 cm.

[0019] In yet another implementation of the present disclosure, the output shaft of the driving unit is coaxially connected to the first inner ring.

[0020] In another embodiment of the present disclosure, the outer MO source pipe and the inner MO source pipe are located in a first plane, the outer carrier pipe and the inner carrier pipe are located in a second plane, and the first plane and the second plane are spaced apart and parallel to each other.

[0021] On the other hand, an embodiment of the present disclosure provides a metal organic chemical vapor deposition device, including: the chamber cover described above.

[0022] In one implementation of the present disclosure, the metal organic chemical vapor deposition apparatus further includes a graphite susceptor;

[0023] The cavity cover and the graphite base are spaced apart from each other;

[0024] The outer MO source pipe and the inner MO source pipe are located in a first plane, the outer carrier pipe and the inner carrier pipe are located in a second plane, the first plane and the second plane are spaced apart and parallel to each other, the first plane is close to the graphite base, and the second plane is far away from the graphite base.

[0025] The technical solutions provided by the embodiments of the present disclosure have the following beneficial effects:

[0026] The cavity cover provided by the embodiment of the present disclosure is applied to a metal organic chemical vapor deposition device, wherein the outer ring portion is opposite to the outer edge of the graphite base of the metal organic chemical vapor deposition device, and the inner ring portion is opposite to the center of the graphite base. In the process of growing epitaxial wafers, the outer MO source pipe and the inner MO source pipe output the MO source precursor, and the outer carrier pipe and the inner carrier pipe output the carrier gas, that is, the group III precursor. Moreover, since the inner ring portion rotates under the drive of the driving portion, the rotating inner ring portion can provide an initial rotational velocity to the output MO source precursor and the carrier gas, thereby avoiding their hysteresis at the center of the graphite base.

[0027] In other words, the chamber cover provided by the disclosed embodiments can output an MO source precursor and carrier gas. Furthermore, because the inner ring portion is relative to the center of the graphite susceptor and rotates, it can provide an initial rotational velocity for the output MO source precursor and carrier gas, preventing them from being delayed at the center of the graphite susceptor. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] In order to more clearly illustrate the technical solutions in the embodiments of the present disclosure, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present disclosure. For ordinary technicians in this field, other drawings can be obtained based on these drawings without any creative work.

[0029] Figure 1 is a schematic structural diagram of a cavity cover provided by an embodiment of the present disclosure;

[0030] Figure 2 is a schematic structural diagram of the outer ring portion provided by an embodiment of the present disclosure;

[0031] Figure 3 is a schematic structural diagram of the inner ring portion provided by an embodiment of the present disclosure;

[0032] Figure 4It is a structural schematic diagram of the metal organic chemical vapor deposition equipment provided in an embodiment of the present disclosure.

[0033] The symbols in the figure mean the following:

[0034] 10. Outer ring;

[0035] 110, external MO source pipe; 120, external carrier pipe; 130, first outer ring; 140, second outer ring;

[0036] 20. Inner ring;

[0037] 210, inner MO source pipe; 220, inner carrier pipe; 230, first inner ring; 240, second inner ring;

[0038] 30. Driving unit;

[0039] 100, cavity cover;

[0040] 200, graphite base;

[0041] 300, cavity wall;

[0042] 400, driving mechanism;

[0043] 500. Heating module. DETAILED DESCRIPTION

[0044] In order to make the objectives, technical solutions and advantages of the present disclosure more clear, the embodiments of the present disclosure will be further described in detail below with reference to the accompanying drawings.

[0045] An LED (Light Emitting Diode) is a semiconductor diode that converts electrical energy into light. LEDs are energy-efficient and environmentally friendly, making them widely used in applications such as traffic signs and outdoor full-color displays. To manufacture an LED, an epitaxial layer is first grown on a substrate to form an LED epitaxial wafer. Electrodes are then placed on the wafer, and the wafer is cut to produce at least two independent LED chips. Finally, the LED chips are packaged to form the LED.

[0046] In related art, epitaxial growth is performed within the reaction chamber of a metal organic chemical vapor deposition (MOCVD) device. The MOCVD reaction chamber has a chamber cover and houses a graphite susceptor. The susceptor comprises a main body and multiple circular pockets for receiving the substrate. During epitaxial growth, a precursor is introduced into the reaction chamber to grow an epitaxial layer on the substrate.

[0047] However, due to the high-speed rotation of the graphite base, the precursor flow rate at the outer edge is faster, while the precursor at the center is delayed, resulting in uneven concentration distribution of the precursor.

[0048] In order to solve the above technical problems, the present disclosure provides a cavity cover. Figure 1 For the structural diagram of the cavity cover, see Figure 1 The chamber cover includes an outer ring portion 10, an inner ring portion 20, and a driving portion 30. The outer ring portion 10 has multiple external MO source pipes 110 and multiple external carrier pipes 120. The inner ring portion 20 is located inside the outer ring portion 10 and is arranged concentrically with the outer ring portion 10. The inner ring portion 20 has multiple internal MO source pipes 210 and multiple internal carrier pipes 220. The driving portion 30 is connected to the inner ring portion 20 and is used to drive the inner ring portion 20 to rotate.

[0049] It should be noted that in Figure 1 In the outer ring portion 10 , the radial solid line is the outer MO source pipe 110 , and the radial dotted line is the outer carrier pipe 120 ; in the inner ring portion 20 , the radial solid line is the inner MO source pipe 210 , and the radial dotted line is the inner carrier pipe 220 .

[0050] The cavity cover provided by the embodiment of the present disclosure is applied to a metal organic chemical vapor deposition device, wherein the outer ring portion 10 is opposite to the outer edge of the graphite base 200 of the metal organic chemical vapor deposition device, and the inner ring portion 20 is opposite to the center of the graphite base 200. In the process of growing epitaxial wafers, the outer MO source pipe 110 and the inner MO source pipe 210 output the MO source precursor, and the outer carrier pipe 120 and the inner carrier pipe 220 output the carrier gas, that is, the group III precursor. In addition, since the inner ring portion 20 rotates under the drive of the driving portion 30, the rotating inner ring portion 20 can provide an initial rotational velocity to the output MO source precursor and the carrier gas, thereby avoiding their hysteresis at the center of the graphite base 200.

[0051] In other words, the chamber cover provided by the disclosed embodiments can output an MO source precursor and carrier gas. Furthermore, because the inner ring portion 20 is positioned relative to the center of the graphite susceptor 200 and rotates, it can provide an initial rotational velocity to the output MO source precursor and carrier gas, preventing them from being delayed at the center of the graphite susceptor 200.

[0052] As can be seen from the foregoing, during the process of growing the epitaxial wafer, the outer ring portion 10 remains stationary, and the inner ring portion 20 rotates relative to the outer ring portion 10. The outer ring portion 10 and the inner ring portion 20 are described below.

[0053] Figure 2 is a schematic structural diagram of the outer ring portion 10, combined with Figure 2In this embodiment, the multiple external MO source pipes 110 and the multiple external carrier pipes 120 all extend along the radial direction of the outer ring portion 10, and the multiple external MO source pipes 110 and the multiple external carrier pipes 120 are alternately arranged around the center circumference of the outer ring portion 10.

[0054] In the above implementation, the external MO source pipe 110 is used to output the MO source precursor, and the external carrier pipe 120 is used to output the group III precursor. Therefore, by arranging the external MO source pipe 110 and the external carrier pipe 120 in the above manner, the outer ring portion 10 can evenly output the MO source precursor and the group III precursor, which is conducive to the uniform distribution of the concentration of the precursors.

[0055] Exemplarily, both the external MO source pipe 110 and the external carrier pipe 120 have multiple nozzles, which are spaced apart along the length direction of the external MO source pipe 110 or the external carrier pipe 120, so as to uniformly output the MO source precursor or the group III precursor.

[0056] Exemplarily, the angles between adjacent external MO source pipes 110 and external carrier pipes 120 are the same, so that the external MO source pipes 110 and external carrier pipes 120 can be evenly arranged on the outer ring portion 10, thereby facilitating uniform output of MO source precursors or group III precursors.

[0057] Continue to see Figure 2 In this embodiment, the outer ring portion 10 includes a first outer ring 130 and a second outer ring 140 . The first outer ring 130 is located inside the second outer ring 140 , and the first outer ring 130 and the second outer ring 140 are arranged concentrically.

[0058] One end of multiple external MO source pipes 110 is connected to the first outer ring 130, and the other end of multiple external MO source pipes 110 is connected to the second outer ring 140. One end of multiple external carrier pipes 120 is connected to the first outer ring 130, and the other end of multiple external carrier pipes 120 is connected to the second outer ring 140.

[0059] In the above implementation, first outer ring 130 is located within second outer ring 140, and first outer ring 130 and second outer ring 140 are arranged concentrically, with a gap between first outer ring 130 and second outer ring 140. External MO source pipe 110 and external carrier pipe 120 are located between first outer ring 130 and second outer ring 140, providing a stable mounting base for external MO source pipe 110 and external carrier pipe 120, thereby ensuring the reliability of outer ring portion 10.

[0060] For example, the connection between the outer MO source pipe 110 and the outer carrier pipe 120 and the first outer ring 130 and the second outer ring 140 may be welding, thereby ensuring the stability of the connection.

[0061] Figure 3 is a structural diagram of the inner ring portion 20, combined with Figure 3 In this embodiment, the multiple inner MO source pipes 210 and the multiple inner carrier pipes 220 all extend radially along the inner ring portion 20, and the multiple inner MO source pipes 210 and the multiple inner carrier pipes 220 are alternately arranged around the center circumference of the inner ring portion 20.

[0062] In the above implementation, the internal MO source pipe 210 is used to output the MO source precursor, and the internal carrier pipe 220 is used to output the group III precursor. Therefore, by arranging the internal MO source pipe 210 and the internal carrier pipe 220 in the above manner, the inner ring portion 20 can evenly output the MO source precursor and the group III precursor, which is conducive to the uniform distribution of the concentration of the precursors.

[0063] Exemplarily, the inner MO source pipe 210 and the inner carrier pipe 220 each have a plurality of nozzles, which are spaced apart along the length direction of the inner MO source pipe 210 or the inner carrier pipe 220, so as to uniformly output the MO source precursor or the group III precursor.

[0064] Exemplarily, the angles between adjacent inner MO source pipes 210 and inner carrier pipes 220 are the same, so that the inner MO source pipes 210 and inner carrier pipes 220 can be evenly arranged on the inner ring portion 20, thereby facilitating uniform output of MO source precursors or group III precursors.

[0065] Continue to see Figure 3 In this embodiment, the inner ring portion 20 includes a first inner ring 230 and a second inner ring 240. The first inner ring 230 is located inside the second inner ring 240, and the first inner ring 230 and the second inner ring 240 are arranged concentrically.

[0066] One end of multiple internal MO source pipes 210 is connected to the first inner ring 230, and the other end of multiple internal MO source pipes 210 is connected to the second inner ring 240. One end of multiple internal carrier pipes 220 is connected to the first inner ring 230, and the other end of multiple internal carrier pipes 220 is connected to the second inner ring 240.

[0067] In the above implementation, the first inner ring 230 is located within the second inner ring 240, and the first inner ring 230 and the second inner ring 240 are arranged concentrically, so that a gap exists between the first inner ring 230 and the second inner ring 240. The inner MO source pipe 210 and the inner carrier pipe 220 are located between the first inner ring 230 and the second inner ring 240, so that the first inner ring 230 and the second inner ring 240 can provide a stable installation foundation for the inner MO source pipe 210 and the inner carrier pipe 220, ensuring the reliability of the inner ring portion 20.

[0068] For example, the inner MO source pipe 210 and the inner carrier pipe 220 may be connected to the first inner ring 230 and the second inner ring 240 by welding, thereby ensuring the stability of the connection.

[0069] Exemplarily, the distance between the center of the first inner ring 230 and the center of the second inner ring 240 is 5 to 15 cm.

[0070] The distance between the center of the first inner ring 230 and the second inner ring 240, i.e., the radial spacing between the first inner ring 230 and the second inner ring 240, determines the dimensions of the inner MO source conduit 210 and the inner carrier conduit 220. Designing the distance between the center of the first inner ring 230 and the second inner ring 240 to the above value effectively ensures that the MO source precursor and the Group III precursor at the center of the graphite susceptor 200 are not delayed.

[0071] In some examples, the distance between the center of first inner ring 230 and the center of second inner ring 240 is 10 cm.

[0072] In this embodiment, the output shaft of the driving unit 30 is coaxially connected to the first inner ring 230 .

[0073] In the above implementation, the output shaft of the driving unit 30 is directly coaxially connected to the first inner ring 230 , so that the driving unit 30 can directly drive the inner ring part 20 to rotate, ensuring precise control of the rotation speed of the inner ring part 20 .

[0074] Of course, in other embodiments, the output shaft of the driving unit 30 can also be connected to the first inner ring 230 or the second inner ring 240 in a transmission manner through other means, such as gears, etc., and the present disclosure does not limit this.

[0075] Exemplarily, the driving unit 30 is a motor.

[0076] In this embodiment, the outer MO source pipe 110 and the inner MO source pipe 210 are located in a first plane, and the outer carrier pipe 120 and the inner carrier pipe 220 are located in a second plane. The first plane and the second plane are spaced apart and parallel to each other.

[0077] In the above implementation, the external MO source pipe 110 and the internal MO source pipe 210 are located on the same horizontal plane, while the external carrier pipe 120 and the internal carrier pipe 220 are located on another horizontal plane. This allows the external MO source pipe 110 and the internal MO source pipe 210 to be staggered with the external carrier pipe 120 and the internal carrier pipe 220 in a direction perpendicular to the horizontal plane. This allows the MO source precursor output from the external MO source pipe 110 and the internal MO source pipe 210 to be more evenly mixed with the Group III precursor output from the external carrier pipe 120 and the internal carrier pipe 220, thereby facilitating a uniform distribution of the precursor concentrations.

[0078] In other embodiments, according to actual needs, the external MO source pipe 110, the internal MO source pipe 210, the external carrier pipe 120 and the internal carrier pipe 220 can also be located on four different horizontal planes, which is not limited in the present disclosure.

[0079] In some examples, in the outer ring portion 10, the external MO source pipe 110 is located in a first plane, the external carrier pipe 120 is located in a second plane, and an inclined plate is provided between adjacent external MO source pipes 110 and external carrier pipes 120. The inclined plate extends radially along the outer ring portion 10, and one side of the inclined plate extending in the length direction is connected to the external MO source pipe 110, and the other side of the inclined plate extending in the length direction is connected to the external carrier pipe 120.

[0080] In the above implementation, the inclined plate is an inclined fan-shaped plate. Setting the inclined plate between the external MO source pipe 110 and the external carrier pipe 120 can effectively improve the structural stability between the external MO source pipe 110 and the external carrier pipe 120.

[0081] In some examples, in the inner ring portion 20, the inner MO source pipe 210 is located in a first plane, the inner carrier pipe 220 is located in a second plane, and there is an inclined plate between adjacent inner MO source pipes 210 and inner carrier pipes 220. The inclined plate extends radially along the inner ring portion 20, and one side of the inclined plate extending in the length direction is connected to the inner MO source pipe 210, and the other side of the inclined plate extending in the length direction is connected to the inner carrier pipe 220.

[0082] In the above-described implementation, the inclined plate is an inclined fan-shaped plate. Positioning the inclined plate between the inner MO source pipe 210 and the inner carrier pipe 220 effectively improves the structural stability between the inner MO source pipe 210 and the inner carrier pipe 220. Furthermore, as the inner ring portion 20 rotates, the inclined plate rotates accordingly, thereby disturbing the MO source precursor and the Group III precursor, resulting in more uniform mixing of the MO source precursor and the Group III precursor, thereby facilitating uniform concentration distribution of the precursors.

[0083] Figure 4 A schematic structural diagram of a metal organic chemical vapor deposition device provided in an embodiment of the present disclosure is shown. Figure 4 for Figure 1 A direction perspective, combined with Figure 4 In this embodiment, the metal organic chemical vapor deposition equipment includes Figure 1-3 The cavity cover 100 is shown.

[0084] Since the metal organic chemical vapor deposition equipment provided by the embodiment of the present disclosure includes Figure 1-3 The cavity cover 100 shown in FIG. Figure 1-3All the beneficial effects of the cavity cover 100 are not described in detail here.

[0085] Continue to see Figure 4 In this embodiment, the metal organic chemical vapor deposition apparatus further includes a chamber wall 300 . The chamber cover 100 and the chamber wall 300 together form a reaction chamber, thereby providing a reaction space for the precursor.

[0086] Exemplarily, the cavity wall 300 is a stainless steel structure.

[0087] In this embodiment, the metal organic chemical vapor deposition apparatus further includes a graphite susceptor 200 , and the chamber cover 100 and the graphite susceptor 200 are spaced apart from each other.

[0088] The outer MO source pipe 110 and the inner MO source pipe 210 are located in a first plane, and the outer carrier pipe 120 and the inner carrier pipe 220 are located in a second plane. The first plane and the second plane are spaced apart and parallel to each other. The first plane is close to the graphite base 200, and the second plane is far away from the graphite base 200.

[0089] In the above implementation, the MO source precursor output by the external MO source pipe 110 and the internal MO source pipe 210 is closer to the graphite base 200, and the group III precursor output by the external carrier pipe 120 and the internal carrier pipe 220 is farther away from the graphite base 200, so that the MO source precursor and the group III precursor are more evenly mixed after reaching the graphite base 200.

[0090] Exemplarily, the distance between the chamber cover 100 and the graphite susceptor 200 is 10-30 cm.

[0091] Exemplarily, the rotation speed of the graphite susceptor 200 is 500-1500 rpm.

[0092] In this embodiment, the metal organic chemical vapor deposition apparatus further includes a drive mechanism 400, which is located on a side of the graphite susceptor 200 facing away from the chamber cover 100. The output shaft of the drive mechanism 400 is coaxially connected to the graphite susceptor 200. The drive mechanism 400 can drive the graphite susceptor 200 to rotate at high speed.

[0093] In this embodiment, the metal organic chemical vapor deposition apparatus further includes a heating module 500, which is located on a side of the graphite susceptor 200 away from the chamber cover 100. The heating module 500 is heated by a heating wire or by radio frequency.

[0094] When preparing an epitaxial wafer by the metal organic chemical vapor deposition equipment provided by the embodiment of the present disclosure, the substrate is placed in the circular groove of the graphite base 200. The chamber cover 100 is closed so that the outer ring portion 10 of the chamber cover 100 is opposite to the outer edge of the graphite base 200, and the inner ring portion 20 of the chamber cover 100 is opposite to the center of the graphite base 200. In the process of growing the epitaxial wafer, the graphite base 200 rotates at high speed under the drive of the driving mechanism 400, and the outer MO source pipe 110 and the inner MO source pipe 210 of the chamber cover 100 output the MO source precursor, and the outer carrier pipe 120 and the inner carrier pipe 220 of the chamber cover 100 output the carrier gas, that is, the group III precursor. In addition, since the inner ring portion 20 rotates under the drive of the driving portion 30, the rotating inner ring portion 20 can provide an initial rotational velocity to the output MO source precursor and the carrier gas, thereby avoiding their hysteresis at the center of the graphite base 200.

[0095] That is, since the chamber cover 100 can output the MO source precursor and the carrier gas, and since the inner ring portion 20 is opposite to the center of the graphite susceptor 200 and rotates itself, it can provide an initial rotational velocity to the output MO source precursor and the carrier gas, thereby preventing them from being delayed at the center of the graphite susceptor 200.

[0096] Unless otherwise defined, the technical or scientific terms used herein shall have the ordinary meaning understood by persons of ordinary skill in the field to which the present disclosure belongs. The words “first”, “second”, “third” and similar terms used in the patent application specification and claims of the present disclosure do not indicate any order, quantity or importance, but are only used to distinguish different components. Similarly, words such as “a” or “an” do not indicate a quantity limitation, but rather indicate the presence of at least one. Words such as “include” or “comprise” mean that the elements or objects appearing before “include” or “comprises” include the elements or objects listed after “include” or “comprises” and their equivalents, and do not exclude other elements or objects. Words such as “connect” or “connected” are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. “Up”, “down”, “left”, “right” and the like are only used to indicate relative positional relationships. When the absolute position of the described object changes, the relative positional relationship may also change accordingly.

[0097] The above description is merely an optional embodiment of the present disclosure and is not intended to limit the present disclosure. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principles of the present disclosure shall be included in the scope of protection of the present disclosure.

Claims

1. A cavity cover, characterized in that: include: The outer ring portion (10) has a plurality of external MO source pipes (110) and a plurality of external carrier pipes (120); The inner ring portion (20) is located inside the outer ring portion (10) and is arranged concentrically with the outer ring portion (10). The inner ring portion (20) has a plurality of inner MO source pipes (210) and a plurality of inner carrier pipes (220). The inner ring portion (20) includes a first inner ring (230) and a second inner ring (240). The first inner ring (230) is located inside the second inner ring (240). The first inner ring (230) and the second inner ring (240) are arranged concentrically. The distance between the center of the ring (230) and the second inner ring (240) is 5 to 15 cm; one end of the plurality of internal MO source pipes (210) is connected to the first inner ring (230), and the other end of the plurality of internal MO source pipes (210) is connected to the second inner ring (240); one end of the plurality of internal carrier pipes (220) is connected to the first inner ring (230), and the other end of the plurality of internal carrier pipes (220) is connected to the second inner ring (240); The driving portion (30) is connected to the inner ring portion (20) and is used to drive the inner ring portion (20) to rotate.

2. The cavity cover according to claim 1, wherein: A plurality of external MO source pipes (110) and a plurality of external carrier pipes (120) all extend in the radial direction of the outer ring portion (10), and the plurality of external MO source pipes (110) and the plurality of external carrier pipes (120) are alternately arranged around the center circumference of the outer ring portion (10).

3. The cavity cover according to claim 2, wherein: The outer ring portion (10) includes a first outer ring (130) and a second outer ring (140); The first outer ring (130) is located inside the second outer ring (140), and the first outer ring (130) and the second outer ring (140) are arranged concentrically; One end of the plurality of external MO source pipes (110) is connected to the first outer ring (130), and the other end of the plurality of external MO source pipes (110) is connected to the second outer ring (140); one end of the plurality of external carrier pipes (120) is connected to the first outer ring (130), and the other end of the plurality of external carrier pipes (120) is connected to the second outer ring (140).

4. The cavity cover according to claim 1, wherein: A plurality of internal MO source pipes (210) and a plurality of internal carrier pipes (220) all extend radially along the inner ring portion (20), and the plurality of internal MO source pipes (210) and the plurality of internal carrier pipes (220) are alternately arranged around the center circumference of the inner ring portion (20).

5. The cavity cover according to claim 1, wherein: The output shaft of the driving part (30) is coaxially connected to the first inner ring (230).

6. The cavity cover according to claim 1, wherein: The outer MO source pipe (110) and the inner MO source pipe (210) are located in a first plane, the outer carrier pipe (120) and the inner carrier pipe (220) are located in a second plane, and the first plane and the second plane are spaced apart and parallel to each other.

7. A metal organic chemical vapor deposition device, characterized in that: include: The cavity cover (100) according to any one of claims 1 to 6.

8. The metal organic chemical vapor deposition equipment according to claim 7, characterized in that: Also included is a graphite base (200); The chamber cover (100) and the graphite base (200) are spaced apart from each other; The external MO source pipe (110) and the internal MO source pipe (210) are located in a first plane, the external carrier pipe (120) and the internal carrier pipe (220) are located in a second plane, the first plane and the second plane are spaced apart and parallel to each other, the first plane is close to the graphite base (200), and the second plane is far away from the graphite base (200).

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