Method and device for obtaining parameters of composite dielectric electromagnetic material, and electronic equipment

Abstract

Embodiments of the present application provide a method and device for obtaining parameters of a composite dielectric electromagnetic material and an electronic device, and relate to the technical field of material testing. The method comprises: obtaining a transmission matrix of a first microstrip line and a transmission matrix of a second microstrip line arranged on a target material; and obtaining a dielectric constant and a loss tangent of the target material based on the transmission matrix of the first microstrip line, the transmission matrix of the second microstrip line, and a simulated scattering coefficient of a target length microstrip line simulated by a simulated differential mode model, wherein the length of the target length microstrip line is the length difference between the first microstrip line and the second microstrip line. The embodiments are used to solve the problem of low accuracy of parameters of a composite dielectric electromagnetic material obtained by a current material testing method.

Description

Technical Field

[0001] This application relates to the field of materials testing technology, and in particular to a method, apparatus and electronic equipment for obtaining parameters of a composite dielectric electromagnetic material. Background Technology

[0002] The characteristic parameters of composite materials are usually provided by the composite material manufacturers. In the field of simulation technology, the accuracy of material characteristic parameters often affects the accuracy and precision of material simulation. However, the accuracy of the parameters of composite dielectric electromagnetic materials obtained based on current material testing methods is relatively low. Therefore, how to obtain more accurate parameters of composite dielectric electromagnetic materials is an urgent problem to be solved. Summary of the Invention

[0003] To address the issue of low accuracy in obtaining parameters of composite dielectric electromagnetic materials based on current material testing methods, this application provides a method, apparatus, and electronic device for obtaining parameters of composite dielectric electromagnetic materials.

[0004] In a first aspect, embodiments of this application provide a method for obtaining parameters of a dielectric electromagnetic material, the method comprising:

[0005] Obtain the transmission matrix of the first microstrip line and the transmission matrix of the second microstrip line set on the target material;

[0006] Based on the transmission matrix of the first microstrip line, the transmission matrix of the second microstrip line, and the simulated scattering coefficient of the target length microstrip line obtained by the simulation differential mode model, the dielectric constant and loss tangent of the target material are obtained, wherein the length of the target length microstrip line is the length difference between the first microstrip line and the second microstrip line.

[0007] In one embodiment, obtaining the dielectric constant and loss tangent of the target material based on the transmission matrix of the first microstrip line, the transmission matrix of the second microstrip line, and the scattering coefficient of the target-length microstrip line obtained by simulation using a differential-mode model includes:

[0008] Based on the transmission line matrix of the first microstrip line and the transmission matrix of the second microstrip line, obtain the difference between the data matrices.

[0009] The estimated scattering coefficient of the target length microstrip line is obtained based on the difference in the data matrix.

[0010] Based on the simulation differential mode model, the simulation scattering coefficient of the microstrip line of the target length is obtained;

[0011] Based on the estimated scattering coefficient and the simulated scattering coefficient, a fitting process is performed to obtain the dielectric constant and loss tangent of the target material.

[0012] In one embodiment, obtaining the simulated scattering coefficients of the target-length microstrip line based on the simulated differential mode model includes:

[0013] Obtain the input parameters of the simulation differential mode model, including: the length, width, thickness, estimated dielectric constant, and estimated loss tangent of the target microstrip line;

[0014] Obtain the simulation curve output by the simulation differential model based on the input parameters;

[0015] The simulated scattering coefficient of the microstrip line of the target length is obtained based on the simulation curve.

[0016] In one embodiment, obtaining the estimated scattering coefficient of the target-length microstrip line based on the data matrix difference includes:

[0017] Obtain the first measured loss value of the first microstrip line at the first frequency point, and the second measured loss value at the second frequency point;

[0018] Obtain the third measured loss value of the second microstrip line at the first frequency point, and the fourth measured loss value at the second frequency point;

[0019] The step of obtaining the simulated scattering coefficient of the target length microstrip line based on the simulated curve includes:

[0020] Based on the simulation curve, a first simulated loss value at a first frequency point and a second simulated loss value at a second frequency point are obtained.

[0021] The process of fitting the estimated scattering coefficient and the simulated scattering coefficient to obtain the dielectric constant and loss tangent of the target material includes:

[0022] Based on the first simulated loss value, the second simulated loss value, the first measured loss value, the second measured loss value, the third measured loss value, and the fourth measured loss value, and a preset function, the dielectric constant function curve and the loss tangent function curve are obtained by fitting.

[0023] The dielectric constant of the target material is obtained based on the dielectric constant function curve.

[0024] The loss tangent of the target material is obtained based on the loss tangent function curve.

[0025] In one embodiment, obtaining the transmission matrix of the first microstrip line and the transmission matrix of the second microstrip line disposed on the target material includes:

[0026] The transmission matrix of the first microstrip line and the transmission matrix of the second microstrip line are obtained by using a test fixture based on the target material.

[0027] The target material in the test fixture is T-shaped. The first microstrip line is deployed on the long base of the T-shape, and the second microstrip line is deployed on the short base of the T-shape. The first microstrip line and the second microstrip line are arranged in parallel. The back of the target material is copper-clad, and four SMA adapters are provided on the front of the test fixture.

[0028] In one embodiment, obtaining the data matrix difference based on the transmission line matrix of the first microstrip line and the transmission matrix of the second microstrip line includes:

[0029] Based on the two-line matrix difference method, the difference between the data matrices is obtained according to the transmission line matrix of the first microstrip line and the transmission matrix of the second microstrip line.

[0030] In one embodiment, a correspondence is established between the target material and the dielectric constant curve and loss tangent curve of the target material;

[0031] The correspondence, dielectric constant curve, and loss tangent curve are stored in the database.

[0032] Secondly, embodiments of this application provide a device for obtaining parameters of a composite dielectric electromagnetic material, comprising:

[0033] The test module is used to obtain the transmission matrix of the first microstrip line and the transmission matrix of the second microstrip line set on the target material;

[0034] The processing module is used to obtain the dielectric constant and loss tangent of the target material based on the transmission matrix of the first microstrip line, the transmission matrix of the second microstrip line, and the simulated scattering coefficient of the target length microstrip line obtained by simulation of the differential mode model, wherein the length of the target length microstrip line is the difference between the lengths of the first microstrip line and the second microstrip line.

[0035] In one embodiment, the processing module is specifically used to obtain the data matrix difference based on the transmission line matrix of the first microstrip line and the transmission matrix of the second microstrip line.

[0036] The estimated scattering coefficient of the target length microstrip line is obtained based on the difference in the data matrix.

[0037] Based on the simulation differential mode model, the simulation scattering coefficient of the microstrip line of the target length is obtained;

[0038] Based on the estimated scattering coefficient and the simulated scattering coefficient, a fitting process is performed to obtain the dielectric constant and loss tangent of the target material.

[0039] In one embodiment, the processing module is specifically used to obtain the input parameters of the simulation differential mode model, the input parameters including: the length, width, thickness, estimated dielectric constant, and estimated loss tangent of the target microstrip line;

[0040] Obtain the simulation curve output by the simulation differential model based on the input parameters;

[0041] The simulated scattering coefficient of the microstrip line of the target length is obtained based on the simulation curve.

[0042] In one embodiment, the processing module is specifically used to obtain a first measured loss value of the first microstrip line at a first frequency point and a second measured loss value at a second frequency point.

[0043] Obtain the third measured loss value of the second microstrip line at the first frequency point, and the fourth measured loss value at the second frequency point;

[0044] The step of obtaining the simulated scattering coefficient of the target length microstrip line based on the simulated curve includes:

[0045] Based on the simulation curve, a first simulated loss value at a first frequency point and a second simulated loss value at a second frequency point are obtained.

[0046] The process of fitting the estimated scattering coefficient and the simulated scattering coefficient to obtain the dielectric constant and loss tangent of the target material includes:

[0047] Based on the first simulated loss value, the second simulated loss value, the first measured loss value, the second measured loss value, the third measured loss value, and the fourth measured loss value, and a preset function, the dielectric constant function curve and the loss tangent function curve are obtained by fitting.

[0048] The dielectric constant of the target material is obtained based on the dielectric constant function curve.

[0049] The loss tangent of the target material is obtained based on the loss tangent function curve.

[0050] In one embodiment, the test module is specifically used to obtain the transmission matrix of the first microstrip line and the transmission matrix of the second microstrip line by means of a test fixture based on the target material.

[0051] The target material in the test fixture is T-shaped. The first microstrip line is deployed on the long base of the T-shape, and the second microstrip line is deployed on the short base of the T-shape. The first microstrip line and the second microstrip line are arranged in parallel. The back of the target material is copper-clad, and four SMA adapters are provided on the front of the test fixture.

[0052] In one embodiment, the processing module is specifically used to obtain the data matrix difference based on the transmission line matrix of the first microstrip line and the transmission matrix of the second microstrip line using the two-line matrix difference method.

[0053] In one embodiment, the apparatus further includes:

[0054] A construction module is used to establish the correspondence between the target material and the dielectric constant curve and loss tangent curve of the target material;

[0055] The correspondence, dielectric constant curve, and loss tangent curve are stored in the database.

[0056] Thirdly, embodiments of this application provide an electronic device, including: a memory and a processor, wherein the memory is used to store a computer program; and the processor is used to execute, when the computer program is invoked, the steps of the method for obtaining parameters of the composite dielectric electromagnetic material described in the first aspect or any optional embodiment of the first aspect.

[0057] Fourthly, embodiments of this application provide a computer-readable storage medium storing a computer program thereon, wherein when the computer program is executed by a processor, it implements the steps of the method for obtaining parameters of the composite dielectric electromagnetic material as described in the first aspect or any optional embodiment of the first aspect.

[0058] The method for obtaining parameters of a composite dielectric electromagnetic material provided in the first aspect of this application involves acquiring the transmission matrices of a first microstrip line and a second microstrip line disposed on the target material. Based on the transmission matrices of the first and second microstrip lines and the simulated scattering coefficient of a target-length microstrip line obtained from a differential-mode simulation model, the dielectric constant and loss tangent of the target material are obtained. The length of the target-length microstrip line is the difference between the lengths of the first and second microstrip lines. In this embodiment, since the simulated scattering coefficient of the target-length microstrip line is obtained based on the transmission matrices of the first and second microstrip lines and a differential-mode simulation model (which are obtained through testing), the simulated scattering coefficient of the target-length microstrip line, combined with the simulation results of the differential-mode model, is more accurate, thereby improving the accuracy of obtaining the dielectric constant and loss tangent of the target material. Attached Figure Description

[0059] The accompanying drawings, which are incorporated in and form part of this specification, illustrate embodiments consistent with this application and, together with the description, serve to explain the principles of this application.

[0060] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, for those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0061] Figure 1 A flowchart illustrating a method for obtaining parameters of a composite dielectric electromagnetic material provided in this application embodiment;

[0062] Figure 2 A schematic diagram of a T-shaped clamp provided in one embodiment of this application;

[0063] Figure 3 This is a connection diagram of a test T-clamp provided in one embodiment of this application;

[0064] Figure 4A This is a schematic diagram of test data for a first microstrip line in one embodiment of this application;

[0065] Figure 4B This is a schematic diagram of test data for the second microstrip line in one embodiment of this application;

[0066] Figure 5 A schematic diagram of a simulation differential model provided in one embodiment of this application;

[0067] Figure 6 A flowchart illustrating another method for obtaining parameters of a composite dielectric electromagnetic material provided in this application embodiment;

[0068] Figure 7A This is a schematic diagram of the transmission matrix of the first microstrip line in one embodiment of this application;

[0069] Figure 7B This is a schematic diagram of the transmission matrix of the second microstrip line in one embodiment of this application;

[0070] Figure 8 A flowchart illustrating a method for obtaining parameters of a composite dielectric electromagnetic material provided in an embodiment of this application;

[0071] Figure 9 A schematic diagram of the simulation curves output by the simulation differential model provided in the embodiments of this application;

[0072] Figure 10A This is a schematic diagram of the insertion loss of the first microstrip line provided in an embodiment of this application;

[0073] Figure 10B This is a schematic diagram of the insertion loss of the second microstrip line provided in an embodiment of this application;

[0074] Figure 11A schematic diagram illustrating the derivation of insertion loss for a target length microstrip line provided in this application embodiment;

[0075] Figure 12 A schematic diagram of the dielectric constant function curve of the target material provided in the embodiments of this application;

[0076] Figure 13 This is a schematic diagram of the loss tangent function curve of the target material provided in the embodiments of this application;

[0077] Figure 14 A schematic diagram illustrating the correspondence between the target material and the dielectric constant curve and loss tangent curve provided in the embodiments of this application;

[0078] Figure 15A A schematic diagram of the dielectric constant curve in ASCII form for the target material provided in the embodiments of this application;

[0079] Figure 15B This is a schematic diagram of the loss tangent curve in ASCII form for the target material provided in the embodiments of this application;

[0080] Figure 16 This is a structural block diagram of a device for obtaining parameters of a composite dielectric electromagnetic material in one embodiment of this application;

[0081] Figure 17 This is a structural block diagram of a device for obtaining parameters of a composite dielectric electromagnetic material in another embodiment of this application;

[0082] Figure 18 This is an internal structural diagram of a computer device in one embodiment of this application. Detailed Implementation

[0083] To make the objectives, technical solutions, and advantages of this application clearer, the following detailed description is provided in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative and not intended to limit the scope of this application. It should be noted that, unless otherwise specified, the embodiments and features described herein can be combined with each other.

[0084] Many specific details are set forth in the following description in order to provide a full understanding of this application, but this application may also be implemented in other ways different from those described herein; obviously, the embodiments in the specification are only some embodiments of this application, and not all embodiments.

[0085] The terms "first" and "second," etc., used in the specification and claims of this application are used to distinguish synchronized objects, not to describe a specific order of objects. For example, "first function" and "second function" are used to distinguish different functions, not to describe a specific order of functions.

[0086] In the embodiments of this application, the terms "exemplary" or "for example" are used to indicate examples, illustrations, or descriptions. Any embodiment or design described as "exemplary" or "for example" in the embodiments of this application should not be construed as being more preferred or advantageous than other embodiments or design solutions. Specifically, the use of terms such as "exemplary" or "for example" is intended to present the relevant concepts in a specific manner. Furthermore, in the description of the embodiments of this application, unless otherwise stated, "multiple" means two or more.

[0087] Currently, the property parameters of some composite materials are usually provided by the manufacturers, while those of others are not provided within the industry. To obtain these parameters, composite materials are often selected for testing. In the field of simulation technology, the accuracy of composite material property parameters often affects the precision and accuracy of material simulations. However, the accuracy of parameters obtained from current material testing methods for composite dielectric electromagnetic materials is relatively low. Therefore, obtaining more accurate parameters for composite dielectric electromagnetic materials is a problem that urgently needs to be solved.

[0088] To address the aforementioned technical problems, this application aims to obtain the dielectric constant and loss tangent parameters of composite dielectric electromagnetic materials. This application obtains the dielectric constant and loss tangent of the target material by setting a first microstrip line and a second microstrip line on the target material, and then combining this with the simulated scattering coefficient of the target length microstrip line obtained from a simulated differential mode model. Because this application combines the first microstrip line, the second microstrip line, and the simulated differential mode model, the obtained dielectric constant and loss tangent of the target material are more accurate.

[0089] The following examples illustrate the method for obtaining parameters of the composite dielectric electromagnetic material provided in this application.

[0090] like Figure 1 As shown, Figure 1 The flowchart illustrates a method for obtaining parameters of a composite dielectric electromagnetic material according to an embodiment of this application. The method includes, but is not limited to, the following steps S11 to S12.

[0091] S11. Obtain the transmission matrix of the first microstrip line and the transmission matrix of the second microstrip line set on the target material.

[0092] The length of the first microstrip line is longer than that of the second microstrip line. The transmission matrix of the first microstrip line can be understood as the attribute parameter of the first microstrip line, and the transmission matrix of the second microstrip line can be understood as the attribute parameter of the second microstrip line.

[0093] Obtaining the transmission matrix of a first microstrip line and a second microstrip line disposed on a target material includes: obtaining the transmission matrix of the first microstrip line and the second microstrip line disposed on a test fixture with the target material as a substrate.

[0094] The target material in the test fixture is T-shaped. The first microstrip line is deployed on the long base of the T-shape, and the second microstrip line is deployed on the short base of the T-shape. The first microstrip line and the second microstrip line are arranged in parallel. The back of the target material is copper-clad, and four SMA adapters are provided on the front of the test fixture.

[0095] For T-clamps, please refer to... Figure 2 As shown, the fabrication process of the T-shaped fixture includes: cutting a section of LCD screen as the LCD screen substrate to create a T-shaped structure with a long base of 63mm, a short base of 39mm, a long base width of 38.5mm, a short base width of 11.5mm, and an average base thickness of 1.86mm. The second step involves copper plating on the back of the fixture, soldering four SMA adapters to the front, and then covering the top surface with 1mm wide first and second microstrip lines to form the hardware testing fixture.

[0096] The manufactured T-shaped clamp is connected via a coaxial cable. Figure 3 The connection method shown is used to connect to the testing instrument to obtain the transmission matrix of the first microstrip line and the transmission matrix of the second microstrip line. In this example, the liquid crystal screen material is the target material. For example, refer to... Figure 4A and Figure 4B As shown, Figure 4A This is a schematic diagram of obtaining test data of a first microstrip line using a test fixture based on the target material. Figure 4B This is a schematic diagram of obtaining test data of a second microstrip line using a test fixture based on the target material.

[0097] S12. Based on the transmission matrix of the first microstrip line, the transmission matrix of the second microstrip line, and the simulated scattering coefficient of the target length microstrip line obtained by the simulation differential mode model, the dielectric constant Dk and loss tangent Df of the target material are obtained.

[0098] The length of the target length microstrip line is the difference between the lengths of the first microstrip line and the second microstrip line, and the lengths of the first microstrip line and the second microstrip line are not equal.

[0099] The simulated scattering coefficient of the target length microstrip line is the S-parameter of the target length microstrip line, which includes S11, S22, S21, S12, S43, etc.

[0100] For example, the first microstrip line can be a microstrip line with dimensions of 54.5mm*1.1mm*0.03mm (length*width*thickness), and the second microstrip line can be a microstrip line with dimensions of 31.5mm*1.1mm*0.03mm (length*width*thickness). The target length is 23mm, and the 23mm*1.1mm*0.03mm microstrip line corresponding to the established simulation differential mode model is the target length microstrip line.

[0101] Reference Figure 5 As shown, Figure 5 The diagram shows the established simulation differential mode model, which includes: microwave substrate 21, microstrip line 22 with a target length of 23mm*1.1mm*0.03mm, 23 being port 1, and 24 being port 2.

[0102] The method for obtaining parameters of composite dielectric electromagnetic materials provided in this application involves acquiring the transmission matrices of a first microstrip line and a second microstrip line disposed on the target material. Based on the transmission matrices of the first and second microstrip lines, and the simulated scattering coefficient of a target-length microstrip line obtained from a differential-mode simulation model, the dielectric constant and loss tangent of the target material are obtained. The length of the target-length microstrip line is the difference between the lengths of the first and second microstrip lines. In this application embodiment, since the simulated scattering coefficient of the target-length microstrip line is obtained based on the transmission matrices of the first and second microstrip lines and a differential-mode simulation model (which are obtained through testing), the simulated scattering coefficient of the target-length microstrip line, combined with the simulation results of the differential-mode simulation model, is more accurate, thereby improving the accuracy of obtaining the dielectric constant and loss tangent of the target material.

[0103] In the above embodiments, step S12 (obtaining the dielectric constant and loss tangent of the target material based on the transmission matrix of the first microstrip line, the transmission matrix of the second microstrip line, and the simulated scattering coefficient of the target length microstrip line obtained from the simulation differential-mode model) can be implemented through the following steps S61 to S64, as described above. Figure 6 As shown, this embodiment will no longer refer to... Figure 1 The same or similar steps in the illustrated embodiments will be described again; for details, please refer to the [reference needed]. Figure 1 Description of the illustrated embodiment.

[0104] S61. Obtain the data matrix difference based on the transmission line matrix of the first microstrip line and the transmission matrix of the second microstrip line.

[0105] For example, based on the two-line matrix difference method, the data matrix difference is obtained according to the transmission line matrix of the first microstrip line and the transmission matrix of the second microstrip line. The obtained transmission matrix of the first microstrip line can be found in [reference needed]. Figure 7A As shown, the transmission line matrix of the obtained second microstrip line can be found in [reference needed]. Figure 7B As shown.

[0106] Among them, the bilinear matrix difference method (egL = exp(gamma*L)) is a gamma exponential distribution function with respect to the variable L.

[0107] S62. Obtain the estimated scattering coefficient of the target length microstrip line based on the difference in the data matrix.

[0108] The estimated scattering coefficient of the target length microstrip line is derived based on the transmission line matrix of the first microstrip line and the transmission matrix of the second microstrip line.

[0109] S63. Based on the simulation differential mode model, obtain the simulation scattering coefficient of the microstrip line of the target length.

[0110] The simulated scattering coefficient is the scattering coefficient of the target length microstrip line obtained based on the simulated differential mode model.

[0111] S64. Based on the estimated scattering coefficient and the simulated scattering coefficient, a fitting is performed to obtain the dielectric constant and loss tangent of the target material.

[0112] By fitting the estimated scattering coefficient of the target length microstrip line with the simulated scattering coefficient of the target length microstrip line, the dielectric constant and loss tangent of the target material can be obtained.

[0113] The estimated scattering coefficient of the target length microstrip line is obtained based on the difference between the data matrices of the first and second microstrip lines, and the simulated scattering coefficient of the target length microstrip line is obtained directly through the simulation differential mode model. This can be understood as obtaining the scattering coefficient of the target length microstrip line in two ways. The scattering coefficients obtained by the two methods are then fitted. Compared with obtaining them by a single method, this can improve the accuracy of obtaining the dielectric constant and loss tangent of the target material.

[0114] exist Figure 6 Based on the illustrated embodiment, as an alternative implementation of step S63 above, obtaining the simulated scattering coefficient of the target length microstrip line based on the simulated differential mode model, the following steps S81 to S83 are described, referring to... Figure 8 As shown, Figure 8 This is a flowchart illustrating a method for obtaining parameters of a composite dielectric electromagnetic material provided in an embodiment of this application. This embodiment will not further elaborate on... Figure 6 The steps in the illustrated embodiments will be described repeatedly; for details, please refer to the embodiments shown. Figure 6 Description of the illustrated embodiment.

[0115] S81. Obtain the input parameters of the simulation differential model.

[0116] The input parameters include: the length, width, thickness, estimated dielectric constant, and estimated loss tangent of the target microstrip line.

[0117] S82. Obtain the simulation curve output by the simulation differential model based on the input parameters.

[0118] The simulation differential model outputs a schematic diagram of the simulation curve based on the input parameters, as shown below. Figure 9 As shown.

[0119] S83. Obtain the simulated scattering coefficient of the microstrip line of the target length based on the simulation curve.

[0120] In this embodiment, obtaining the estimated scattering coefficient of the target length microstrip line based on the difference in the data matrix includes: obtaining a first measured loss value of the first microstrip line at a first frequency point and a second measured loss value at a second frequency point; obtaining a third measured loss value of the second microstrip line at a first frequency point and a fourth measured loss value at a second frequency point.

[0121] For example, optionally, the insertion loss of the first microstrip line and the insertion loss of the second microstrip line can also be obtained, with reference to Figure 10A and Figure 10B As shown, Figure 10A Schematic diagram of insertion loss of the first microstrip line Figure 10B The second microstrip line insertion loss diagram is based on... Figure 10A The schematic diagram of the insertion loss of the first microstrip line shows that the first frequency of the first microstrip line is 1.6 GHz, and the first measured loss value of the first microstrip line at the first frequency is 5.3 dB; the second frequency of the first microstrip line is 5.9 GHz, and the second measured loss value of the first microstrip line at the second frequency is 9.5 dB. According to... Figure 10B The schematic diagram of the insertion loss of the second microstrip line shown shows that the third measured loss value of the second microstrip line at the first frequency point of 1.6 GHz is 2.4 dB, and the fourth measured loss value of the second microstrip line at the second frequency point of 5.9 GHz is 6.7 dB.

[0122] Given the first measured loss value of the first microstrip line at the first frequency, the second measured loss value of the first microstrip line at the second frequency, the third measured loss value of the second microstrip line at the first frequency, and the fourth measured loss value of the second microstrip line at the second frequency, obtaining the simulated scattering coefficient of the target length microstrip line based on the simulation curve includes: obtaining the first simulated loss value at the first frequency and the second simulated loss value at the second frequency based on the simulation curve.

[0123] according to Figure 10ASchematic diagram of insertion loss of the first microstrip line and Figure 10B By deriving the insertion loss diagram of the second microstrip line, the derived loss values ​​of the microstrip line of the target length at multiple frequency points can be obtained, such as... Figure 11 As shown, the first analog loss value of the target length microstrip line at the first frequency of 1.6 GHz is 1.03 dB, and the second analog loss value at the first frequency of 5.9 GHz is 2.34 dB.

[0124] Based on the above embodiments, the step of fitting the estimated scattering coefficient and the simulated scattering coefficient to obtain the dielectric constant and loss tangent of the target material includes:

[0125] Based on the first simulated loss value, the second simulated loss value, the first measured loss value, the second measured loss value, the third measured loss value, and the fourth measured loss value, and a preset function, a dielectric constant function curve and a loss tangent function curve are obtained; the dielectric constant of the target material is obtained based on the dielectric constant function curve; and the loss tangent of the target material is obtained based on the loss tangent function curve.

[0126] The preset function is the gamma function, which can be:

[0127] Γ=∫e^(α+βi)e^(-iωl)dL1;

[0128] Where α is the real part of the propagation constant, β is the imaginary part of the propagation constant, L1 is the length of the microstrip line, ω is the frequency, and ω = 2πf.

[0129] Based on this, the simulation differential mode model can be egL=exp(gamma*L), where L is the length of the target length microstrip line.

[0130] The derivation of the above gamma function may include:

[0131] The first step is to calculate the capacitance value of the copper-clad microstrip line, dC / dω=1 / (ω*Z″), where the capacitance value is used to derive the relative permittivity, ω=2πf, and Z″ is used to calculate the partial derivative of the impedance, which is the imaginary part of the impedance. For the radio frequency band, the capacitance curve in the range of 1~6GHz should be calculated.

[0132] The second step is to calculate the relative permittivity based on the capacitance value obtained above: εr=4πKd / S*dC / dω, where K is the electrostatic constant, K=9*E9, d is the thickness of the copper cladding, and S is the area of ​​the microstrip line, S=L*W.

[0133] Step 3: Calculate the propagation constant γ based on the relative permittivity:

[0134] α=(ω2 μεr / 2)1 / 2*{-1+[1+(ωμσ / 2) 2 ]1 / 2}1 / 2;

[0135] β=(ω 2 μεr / 2)1 / 2*{1+[1+(ωμσ / 2) 2 ]1 / 2}1 / 2;

[0136] γ = α + βi; where μ is the magnetic permeability and σ is the electrical conductivity.

[0137] Step 4: Derive the above gamma function;

[0138] Furthermore, the complex permittivity can be calculated using the gamma function:

[0139] egL=∫e^(α+βi)e^(-iωl)dL1*L=ie^(α+βi)e^(-iωl).

[0140] For example, the dielectric constant function curve is obtained by fitting the first simulated loss value, the second simulated loss value, the first measured loss value, the second measured loss value, the third measured loss value, and the fourth measured loss value with a preset function, as shown in the figure. Figure 12 As shown, the obtained loss tangent function curve is as follows: Figure 13 As shown; the dielectric constant of the target material is obtained based on the dielectric constant function curve; the loss tangent of the target material is obtained based on the loss tangent function curve.

[0141] Based on any of the above embodiments, after determining the dielectric constant curve and loss tangent curve of the target material, the method may further include: establishing a correspondence between the target material and the dielectric constant curve and loss tangent curve of the target material; and storing the correspondence, the dielectric constant curve, and the loss tangent curve in a database.

[0142] For example, the correspondence between the dielectric constant curve and the loss tangent curve of the target material can be as follows: Figure 14 As shown, the method for obtaining parameters of composite dielectric electromagnetic materials based on the embodiments of this application can obtain the correspondence between the dielectric constant curves and loss tangent curves of multiple composite dielectric electromagnetic materials. By storing the correspondence, dielectric constant curves, loss tangent curves, and composite material identifiers in a database, the composite material identifiers can be the name or ID of the composite material, etc., and can be used as a simulation material library to search for the dielectric constant and loss tangent of the target material.

[0143] Optionally, the dielectric constant curve and loss tangent curve of the target material can be saved as follows: Figure 15A and Figure 15B The ASCII format shown provides a design library for whole-machine simulation of target material properties.

[0144] In this embodiment, by setting the length difference between a first microstrip line and a second microstrip line as the target length, the S-parameters of the microstrip line of the target length can be derived based on the measured transmission matrices of the first and second microstrip lines. By fitting the S-parameters obtained from simulation, the dielectric constant and loss tangent of the microstrip line of the target length can be obtained, thereby improving the accuracy of the obtained dielectric constant and loss tangent.

[0145] Based on the same inventive concept, as an implementation of the above method embodiments, this disclosure also provides a device for obtaining parameters of composite dielectric electromagnetic materials. This device embodiment corresponds to the aforementioned method embodiments. For ease of reading, this device embodiment will not repeat the details of the aforementioned method embodiments one by one, but it should be clear that the device in this embodiment can correspondingly implement all the contents of the aforementioned method embodiments.

[0146] In one embodiment, refer to Figure 16 As shown, a device 160 for acquiring parameters of a composite dielectric electromagnetic material is provided, comprising:

[0147] Test module 161 is used to obtain the transmission matrix of the first microstrip line and the transmission matrix of the second microstrip line set on the target material;

[0148] The processing module 162 is used to obtain the dielectric constant and loss tangent of the target material based on the transmission matrix of the first microstrip line, the transmission matrix of the second microstrip line, and the simulated scattering coefficient of the target length microstrip line obtained by simulation of the differential mode model, wherein the length of the target length microstrip line is the length difference between the first microstrip line and the second microstrip line.

[0149] In one embodiment, the processing module 162 is specifically configured to: obtain a data matrix difference based on the transmission line matrix of the first microstrip line and the transmission matrix of the second microstrip line; obtain an estimated scattering coefficient of the target length microstrip line based on the data matrix difference; obtain a simulated scattering coefficient of the target length microstrip line based on the simulated differential mode model; and perform fitting based on the estimated scattering coefficient and the simulated scattering coefficient to obtain the dielectric constant and loss tangent of the target material.

[0150] In one embodiment, the processing module 162 is specifically used to obtain the input parameters of the simulation differential mode model, the input parameters including: the length, width, thickness, estimated dielectric constant, and estimated loss tangent of the target microstrip line; obtain the simulation curve output by the simulation differential mode model based on the input parameters; and obtain the simulation scattering coefficient of the target length microstrip line based on the simulation curve.

[0151] In one embodiment, the processing module 162 is specifically used to obtain a first measured loss value of the first microstrip line at a first frequency point and a second measured loss value at a second frequency point; obtain a third measured loss value of the second microstrip line at a first frequency point and a fourth measured loss value at a second frequency point; obtaining the simulated scattering coefficient of the target length microstrip line based on the simulation curve includes: obtaining a first simulated loss value at a first frequency point and a second simulated loss value at a second frequency point based on the simulation curve; fitting the estimated scattering coefficient and the simulated scattering coefficient to obtain the dielectric constant and loss tangent of the target material includes: fitting the first simulated loss value, the second simulated loss value, the first measured loss value, the second measured loss value, the third measured loss value, and the fourth measured loss value with a preset function to obtain a dielectric constant function curve and a loss tangent function curve; obtaining the dielectric constant of the target material based on the dielectric constant function curve; and obtaining the loss tangent of the target material based on the loss tangent function curve.

[0152] In one embodiment, the test module 161 is specifically used to obtain the transmission matrix of the first microstrip line and the transmission matrix of the second microstrip line through a test fixture based on the target material; wherein the target material in the test fixture is T-shaped, the first microstrip line is deployed on the long base of the T-shape, the second microstrip line is deployed on the short base of the T-shape, the first microstrip line and the second microstrip line are arranged in parallel, the back of the target material is copper-clad, and four SMA adapters are provided on the front of the test fixture.

[0153] In one embodiment, the processing module 162 is specifically used to obtain the data matrix difference based on the transmission line matrix of the first microstrip line and the transmission matrix of the second microstrip line using the two-line matrix difference method.

[0154] like Figure 17 As shown, in one embodiment, in Figure 16 Based on the parameter acquisition device 160 of the composite dielectric electromagnetic material shown, it further includes: a construction module 171, used to establish the correspondence between the target material and the dielectric constant curve and loss tangent curve of the target material; and to store the correspondence, the dielectric constant curve and the loss tangent curve in a database.

[0155] The parameter acquisition device for composite dielectric electromagnetic materials provided in this application, when executing the parameter acquisition method for composite dielectric electromagnetic materials, acquires the transmission matrix of a first microstrip line and a second microstrip line disposed on the target material; based on the transmission matrix of the first microstrip line, the transmission matrix of the second microstrip line, and the simulated scattering coefficient of a target-length microstrip line obtained by simulation using a differential-mode simulation model, the dielectric constant and loss tangent of the target material are acquired. The length of the target-length microstrip line is the length difference between the first microstrip line and the second microstrip line. In this application embodiment, since the simulated scattering coefficient of the target-length microstrip line is obtained based on the transmission matrix of the first microstrip line, the transmission matrix of the second microstrip line, and the simulated differential-mode simulation model, and the transmission matrices of the first and second microstrip lines are obtained through testing, combining the simulation results of the differential-mode simulation model makes the simulated scattering coefficient of the target-length microstrip line more accurate, thereby improving the accuracy of acquiring the dielectric constant and loss tangent of the target material.

[0156] In one embodiment, a computer device is provided, which may be a terminal, and its internal structure diagram may be as follows: Figure 18 As shown, the computer device includes a processor, memory, communication interface, display screen, and input devices connected via a system bus. The processor provides computing and control capabilities. The memory includes non-volatile storage media and internal memory. The non-volatile storage media stores the operating system and computer programs. The internal memory provides an environment for the operation of the operating system and computer programs stored in the non-volatile storage media. The communication interface is used for wired or wireless communication with external terminals; wireless communication can be achieved through Wi-Fi, carrier networks, Near Field Communication (NFC), or other technologies. When executed by the processor, the computer program implements a method for acquiring parameters of a composite dielectric electromagnetic material. The display screen can be an LCD screen or an e-ink screen. The input devices can be a touch layer covering the display screen, buttons, a trackball, or a touchpad mounted on the computer device casing, or an external keyboard, touchpad, or mouse.

[0157] Those skilled in the art will understand that Figure 18 The structure shown is merely a block diagram of a portion of the structure related to the present application and does not constitute a limitation on the computer device to which the present application is applied. Specific computer devices may include more or fewer components than those shown in the figure, or combine certain components, or have different component arrangements.

[0158] In one embodiment, the method for obtaining parameters of the composite dielectric electromagnetic material provided in this application can be implemented as a computer program, which can be implemented in, for example... Figure 18 The computer device shown is running on this device. The computer device's memory can store various program modules of the device for acquiring parameters of the electromagnetic material constituting the composite medium, for example... Figure 17 The test module 161, processing module 162, and construction module 171 are shown. The computer program, which consists of these modules, causes the processor to execute the steps in the method for obtaining parameters of the composite dielectric electromagnetic material of the various embodiments of this application described in this specification.

[0159] In one embodiment, an electronic device is provided, including a memory and a processor, the memory storing a computer program, the processor executing the computer program to perform the following steps:

[0160] Obtain the transmission matrix of the first microstrip line and the transmission matrix of the second microstrip line set on the target material;

[0161] Based on the transmission matrix of the first microstrip line, the transmission matrix of the second microstrip line, and the simulated scattering coefficient of the target length microstrip line obtained by the simulation differential mode model, the dielectric constant and loss tangent of the target material are obtained, wherein the length of the target length microstrip line is the length difference between the first microstrip line and the second microstrip line.

[0162] In one embodiment, when the processor executes the computer program, it further performs the following steps: obtaining a data matrix difference based on the transmission line matrix of the first microstrip line and the transmission matrix of the second microstrip line; obtaining an estimated scattering coefficient of the target length microstrip line based on the data matrix difference; obtaining a simulated scattering coefficient of the target length microstrip line based on the simulated differential mode model; and fitting the estimated scattering coefficient and the simulated scattering coefficient to obtain the dielectric constant and loss tangent of the target material.

[0163] In one embodiment, when the processor executes the computer program, it further performs the following steps: obtaining input parameters of the simulation differential mode model, the input parameters including: the length, width, thickness, estimated dielectric constant, and estimated loss tangent of the target microstrip line; obtaining the simulation curve output by the simulation differential mode model based on the input parameters; and obtaining the simulation scattering coefficient of the microstrip line of the target length based on the simulation curve.

[0164] In one embodiment, when the processor executes the computer program, it further performs the following steps: obtaining a first measured loss value of the first microstrip line at a first frequency point and a second measured loss value at a second frequency point; obtaining a third measured loss value of the second microstrip line at the first frequency point and a fourth measured loss value at the second frequency point; obtaining a first simulated loss value at the first frequency point and a second simulated loss value at the second frequency point based on the simulation curve; fitting the first simulated loss value, the second simulated loss value, the first measured loss value, the second measured loss value, the third measured loss value, and the fourth measured loss value with a preset function to obtain a dielectric constant function curve and a loss tangent function curve; obtaining the dielectric constant of the target material based on the dielectric constant function curve; and obtaining the loss tangent of the target material based on the loss tangent function curve.

[0165] In one embodiment, when the processor executes the computer program, it further performs the following steps: acquiring the transmission matrix of the first microstrip line and the transmission matrix of the second microstrip line through a test fixture based on the target material; wherein the target material in the test fixture is T-shaped, the first microstrip line is deployed on the long base of the T-shape, the second microstrip line is deployed on the short base of the T-shape, the first microstrip line and the second microstrip line are arranged in parallel, the back of the target material is copper-clad, and four SMA adapters are provided on the front of the test fixture.

[0166] In one embodiment, when the processor executes the computer program, it further performs the following steps: based on the two-line matrix difference method, it obtains the data matrix difference according to the transmission line matrix of the first microstrip line and the transmission matrix of the second microstrip line.

[0167] In one embodiment, when the processor executes the computer program, it further performs the following steps: establishing a correspondence between the target material and the dielectric constant curve and loss tangent curve of the target material; and storing the correspondence, the dielectric constant curve, and the loss tangent curve in a database.

[0168] The electronic device provided in this application, when performing a method for obtaining parameters of a composite dielectric electromagnetic material, acquires the transmission matrix of a first microstrip line and a second microstrip line disposed on the target material; based on the transmission matrix of the first microstrip line, the transmission matrix of the second microstrip line, and the simulated scattering coefficient of a target-length microstrip line obtained by simulation using a differential-mode simulation model, it obtains the dielectric constant and loss tangent of the target material. The length of the target-length microstrip line is the difference in length between the first microstrip line and the second microstrip line. In this application embodiment, since the simulated scattering coefficient of the target-length microstrip line is obtained based on the transmission matrix of the first microstrip line, the transmission matrix of the second microstrip line, and the simulated differential-mode simulation model, and the transmission matrices of the first and second microstrip lines are obtained through testing, combining the simulation results of the differential-mode simulation model makes the simulated scattering coefficient of the target-length microstrip line more accurate, thereby improving the accuracy of obtaining the dielectric constant and loss tangent of the target material.

[0169] The electronic device provided in this embodiment can realize the method for obtaining parameters of composite dielectric electromagnetic materials provided in the above method embodiment. Its implementation principle and technical effect are similar, and will not be described again here.

[0170] In one embodiment, a computer-readable storage medium is provided having a computer program stored thereon, the computer program performing the following steps when executed by a processor:

[0171] Obtain the transmission matrix of the first microstrip line and the transmission matrix of the second microstrip line set on the target material;

[0172] Based on the transmission matrix of the first microstrip line, the transmission matrix of the second microstrip line, and the simulated scattering coefficient of the target length microstrip line obtained by the simulation differential mode model, the dielectric constant and loss tangent of the target material are obtained, wherein the length of the target length microstrip line is the length difference between the first microstrip line and the second microstrip line.

[0173] In one embodiment, when the computer program is executed by the processor, it further performs the following steps: obtaining a data matrix difference based on the transmission line matrix of the first microstrip line and the transmission matrix of the second microstrip line; obtaining an estimated scattering coefficient of the target length microstrip line based on the data matrix difference; obtaining a simulated scattering coefficient of the target length microstrip line based on the simulated differential mode model; and fitting the estimated scattering coefficient and the simulated scattering coefficient to obtain the dielectric constant and loss tangent of the target material.

[0174] In one embodiment, when the computer program is executed by the processor, it further performs the following steps: obtaining input parameters of the simulation differential mode model, the input parameters including: the length, width, thickness, estimated dielectric constant, and estimated loss tangent of the target microstrip line; obtaining the simulation curve output by the simulation differential mode model based on the input parameters; and obtaining the simulation scattering coefficient of the microstrip line of the target length based on the simulation curve.

[0175] In one embodiment, when the computer program is executed by a processor, it further performs the following steps: obtaining a first measured loss value of a first microstrip line at a first frequency point and a second measured loss value at a second frequency point; obtaining a third measured loss value of a second microstrip line at a first frequency point and a fourth measured loss value at a second frequency point; obtaining a first simulated loss value at a first frequency point and a second simulated loss value at a second frequency point based on the simulation curve; fitting a dielectric constant function curve and a loss tangent function curve based on the first simulated loss value, the second simulated loss value, the first measured loss value, the second measured loss value, the third measured loss value, and the fourth measured loss value and a preset function; obtaining the dielectric constant of the target material based on the dielectric constant function curve; and obtaining the loss tangent of the target material based on the loss tangent function curve.

[0176] In one embodiment, when the computer program is executed by a processor, it further performs the following steps: acquiring the transmission matrix of a first microstrip line and a second microstrip line using a test fixture based on the target material; wherein the target material in the test fixture is T-shaped, the first microstrip line is deployed on the long base of the T-shape, the second microstrip line is deployed on the short base of the T-shape, the first microstrip line and the second microstrip line are arranged in parallel, the back of the target material is copper-clad, and four SMA adapters are provided on the front of the test fixture.

[0177] In one embodiment, when the computer program is executed by the processor, it further performs the following steps: based on the two-line matrix difference method, obtaining the data matrix difference according to the transmission line matrix of the first microstrip line and the transmission matrix of the second microstrip line.

[0178] In one embodiment, when the computer program is executed by the processor, it further performs the following steps: establishing a correspondence between the target material and the dielectric constant curve and loss tangent curve of the target material; and storing the correspondence, the dielectric constant curve, and the loss tangent curve in a database.

[0179] The computer program provided in this application, when executed by a processor, implements a method for obtaining parameters of a composite dielectric electromagnetic material. This method involves obtaining the transmission matrices of a first microstrip line and a second microstrip line disposed on the target material. Based on the transmission matrices of the first and second microstrip lines, and the simulated scattering coefficient of a target-length microstrip line obtained from a differential-mode simulation model, the dielectric constant and loss tangent of the target material are obtained. The length of the target-length microstrip line is the difference between the lengths of the first and second microstrip lines. In this application embodiment, since the simulated scattering coefficient of the target-length microstrip line is obtained based on the transmission matrices of the first and second microstrip lines and a differential-mode simulation model (which are obtained through testing), the simulation scattering coefficient of the target-length microstrip line, combined with the simulation results of the differential-mode model, is more accurate, thereby improving the accuracy of obtaining the dielectric constant and loss tangent of the target material.

[0180] The computer program stored on the computer-readable storage medium provided in this embodiment can implement the method for obtaining parameters of composite dielectric electromagnetic materials provided in the above method embodiment. Its implementation principle and technical effect are similar, and will not be described again here.

[0181] Those skilled in the art will understand that all or part of the processes in the methods of the above embodiments can be implemented by a computer program instructing related hardware. The computer program can be stored in a non-volatile computer-readable storage medium. When executed, the computer program can include the processes of the embodiments of the above methods. Any references to memory, databases, or other media used in the embodiments provided in this application can include at least one of non-volatile and volatile memory. Non-volatile memory can include read-only memory (ROM), magnetic tape, floppy disk, flash memory, or optical storage, etc. Volatile memory can include random access memory (RAM) or external cache memory. By way of illustration and not limitation, RAM is available in various forms, such as static random access memory (SRAM) and dynamic random access memory (DRAM), etc.

[0182] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0183] The above embodiments merely illustrate several implementation methods of this application, and while the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the invention patent. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this application, and these all fall within the protection scope of this application. Therefore, the protection scope of this patent application should be determined by the appended claims.

Claims

1. A method for obtaining parameters of a composite dielectric electromagnetic material, characterized in that, include: Obtain the transmission matrix of the first microstrip line and the transmission matrix of the second microstrip line set on the target material; Based on the transmission matrix of the first microstrip line, the transmission matrix of the second microstrip line, and the simulated scattering coefficient of the target length microstrip line obtained by the simulation differential mode model, the dielectric constant and loss tangent of the target material are obtained, wherein the length of the target length microstrip line is the length difference between the first microstrip line and the second microstrip line; The step of obtaining the dielectric constant and loss tangent of the target material based on the transmission matrix of the first microstrip line, the transmission matrix of the second microstrip line, and the scattering coefficient of the target length microstrip line obtained by simulation of the differential mode model includes: Based on the transmission line matrix of the first microstrip line and the transmission matrix of the second microstrip line, obtain the difference between the data matrices. The estimated scattering coefficient of the target length microstrip line is obtained based on the difference in the data matrix. Based on the simulation differential mode model, the simulation scattering coefficient of the microstrip line of the target length is obtained; Based on the estimated scattering coefficient and the simulated scattering coefficient, a fitting is performed to obtain the dielectric constant and loss tangent of the target material; The step of obtaining the simulated scattering coefficients of the target length microstrip line based on the simulated differential mode model includes: Obtain the input parameters of the simulation differential mode model, including: the length, width, thickness, estimated dielectric constant, and estimated loss tangent of the target microstrip line; Obtain the simulation curve output by the simulation differential model based on the input parameters; The simulated scattering coefficient of the microstrip line of the target length is obtained based on the simulation curve. The process of obtaining the estimated scattering coefficient of the target-length microstrip line based on the difference in the data matrix includes: Obtain the first measured loss value of the first microstrip line at the first frequency point, and the second measured loss value at the second frequency point; Obtain the third measured loss value of the second microstrip line at the first frequency point, and the fourth measured loss value at the second frequency point; The step of obtaining the simulated scattering coefficient of the target length microstrip line based on the simulated curve includes: Based on the simulation curve, a first simulated loss value at a first frequency point and a second simulated loss value at a second frequency point are obtained. The process of fitting the estimated scattering coefficient and the simulated scattering coefficient to obtain the dielectric constant and loss tangent of the target material includes: Based on the first simulated loss value, the second simulated loss value, the first measured loss value, the second measured loss value, the third measured loss value, and the fourth measured loss value, and a preset function, the dielectric constant function curve and the loss tangent function curve are obtained by fitting. Wherein, the preset function is the gamma function, and the gamma function is: Γ=∫e^(α+βi)e^(-iωl)dL1, α is the real part of the propagation constant, β is the imaginary part of the propagation constant, l is the length of the target length microstrip line, L1 is the length of the microstrip line, ω is the frequency, ω=2πf, (f is the frequency of the first or second frequency point); the gamma function is derived from the capacitance, relative permittivity, and propagation constant of the target material, and is used to establish the mapping relationship between the loss value and the permittivity and loss tangent. The dielectric constant of the target material is obtained based on the dielectric constant function curve. The loss tangent of the target material is obtained based on the loss tangent function curve.

2. The method according to claim 1, characterized in that, The acquisition of the transmission matrix of the first microstrip line and the transmission matrix of the second microstrip line disposed on the target material includes: The transmission matrix of the first microstrip line and the transmission matrix of the second microstrip line are obtained by using a test fixture based on the target material. The target material in the test fixture is T-shaped. The first microstrip line is deployed on the long base of the T-shape, and the second microstrip line is deployed on the short base of the T-shape. The first microstrip line and the second microstrip line are arranged in parallel. The back of the target material is copper-clad, and four SMA adapters are provided on the front of the test fixture.

3. The method according to claim 1, characterized in that, The step of obtaining the data matrix difference based on the transmission line matrix of the first microstrip line and the transmission matrix of the second microstrip line includes: Based on the two-line matrix difference method, the difference between the data matrices is obtained according to the transmission line matrix of the first microstrip line and the transmission matrix of the second microstrip line.

4. The method according to claim 1, characterized in that, Also includes: Establish the correspondence between the target material and its dielectric constant curve and loss tangent curve; The correspondence, dielectric constant curve, and loss tangent curve are stored in the database.

5. The acquisition apparatus using the method of claim 1, characterized in that, include: The test module is used to obtain the transmission matrix of the first microstrip line and the transmission matrix of the second microstrip line set on the target material; The processing module is used to obtain the dielectric constant and loss tangent of the target material based on the transmission matrix of the first microstrip line, the transmission matrix of the second microstrip line, and the simulated scattering coefficient of the target length microstrip line obtained by simulation of the differential mode model, wherein the length of the target length microstrip line is the length difference between the first microstrip line and the second microstrip line.

6. An electronic device, characterized in that, include: A memory and a processor, wherein the memory is used to store a computer program; and the processor is used to execute, when the computer program is invoked, the steps of the method for obtaining parameters of the composite dielectric electromagnetic material according to any one of claims 1-4.

7. A computer-readable storage medium, characterized in that, It stores a computer program, which, when executed by a processor, implements the steps of the method for obtaining parameters of the composite dielectric electromagnetic material as described in any one of claims 1-4.

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