Filtering device and its manufacturing method

By generating photonic crystals with dielectric materials of different thicknesses and combining them into a coupled cavity structure, the problem of inflexible design of filtering devices in the prior art is solved, and a flat-top filtering effect that adapts to different frequency bands is achieved.

CN115755262BActive Publication Date: 2025-11-14CHINA TELECOM CORP LTD
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Patent Information

Application Number
CN202211436389.5
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2022-11-16
Publication Date
2025-11-14
Estimated Expiration
2042-11-16

AI Technical Summary

Technical Problem

Existing technologies lack flexible and simple filter devices, making it difficult to design them differently for different operating frequency bands.

Method used

By setting first and second dielectric materials of different thicknesses, a first photonic crystal, a second photonic crystal, and a third photonic crystal are generated, and they are combined into a first coupled cavity structure and a second coupled cavity structure to form a wider photonic bandgap to achieve flat-top filtering.

Benefits of technology

It achieves design flexibility and structural simplicity of the filtering device, adapting to signal frequency band requirements in different scenarios.

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Abstract

This disclosure provides a filtering device and a method for manufacturing the filtering device, relating to the field of electronic technology. The device includes a first coupling cavity structure and a second coupling cavity structure; the first coupling cavity structure includes a first photonic crystal and a second photonic crystal; the second coupling cavity structure includes a first photonic crystal and a third photonic crystal; the first photonic crystal includes a first dielectric material of a first thickness and a second dielectric material of a second thickness, the second photonic crystal includes a first dielectric material of a third thickness and a second dielectric material of a fourth thickness, and the third photonic crystal includes a first dielectric material of a fifth thickness and a second dielectric material of a sixth thickness. This disclosure offers flexible design and a simple structure. Furthermore, by setting different thicknesses of the first and second dielectric materials, different first, second, and third photonic crystals can be obtained, thereby adapting to different signal frequency bands.
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Description

Technical Field

[0001] This disclosure relates to the field of electronic technology, and in particular to a filter device and a method for manufacturing the filter device. Background Technology

[0002] A filter is an instrument used for wavelength selection. A filter can select the desired wavelength from a large number of wavelengths, while rejecting wavelengths other than the selected wavelength. For example, filters can be used in wavelength selection, noise filtering of optical amplifiers, gain equalization, optical multiplexing / demultiplexing, and other technical fields.

[0003] In existing technologies, flat-top filtering can be used to filter desired waves. Therefore, there is a need for a flexible and simple-structured filtering device that can filter waves using the flat-top filtering method. Furthermore, this filtering device can be designed differently for different operating frequency bands.

[0004] It should be noted that the information disclosed in the background section above is only used to enhance the understanding of the background of this disclosure, and therefore may include information that does not constitute prior art known to those skilled in the art. Summary of the Invention

[0005] This disclosure provides a filtering device and a method for manufacturing the filtering device. The filtering device is flexible in design and simple in structure to a certain extent, and can be designed differently according to different operating frequency bands.

[0006] Other features and advantages of this disclosure will become apparent from the following detailed description, or may be learned in part from practice of this disclosure.

[0007] According to one aspect of the present disclosure, a filtering device is provided, comprising: a first coupling cavity structure and a second coupling cavity structure;

[0008] The first coupling cavity structure includes a first photonic crystal and a second photonic crystal; the second coupling cavity structure includes a first photonic crystal and a third photonic crystal.

[0009] The first photonic crystal includes: a first dielectric material with a first thickness and a second dielectric material with a second thickness; the second photonic crystal includes: a first dielectric material with a third thickness and a second dielectric material with a fourth thickness; the third photonic crystal includes: a first dielectric material with a fifth thickness and a second dielectric material with a sixth thickness; the ratio of the third thickness to the first thickness is a first coefficient, the ratio of the fourth thickness to the second thickness is a first coefficient, the ratio of the fifth thickness to the first thickness is a second coefficient, and the ratio of the sixth thickness to the second thickness is a second coefficient.

[0010] In some embodiments of this disclosure, the filtering device is obtained by splicing the second photonic crystal in the first coupling cavity structure and the third photonic crystal in the second coupling cavity structure.

[0011] In some embodiments of this disclosure, the first photonic crystal is obtained by periodically arranging the first dielectric material and the second dielectric material;

[0012] The arrangement of the first dielectric material and the second dielectric material in the second photonic crystal and the third photonic crystal is the same as that in the first photonic crystal.

[0013] In some embodiments of this disclosure, the first dielectric material is magnesium fluoride and the second dielectric material is antimony trioxide.

[0014] In some embodiments of this disclosure, the first coefficient is 0.55 and the second coefficient is 0.35.

[0015] According to another aspect of this disclosure, a method for manufacturing a filter device is provided, comprising:

[0016] A first photonic crystal is generated using a first dielectric material of a first thickness and a second dielectric material of a second thickness; a second photonic crystal is generated using a first dielectric material of a third thickness and a second dielectric material of a fourth thickness, wherein the ratio of the third thickness to the first thickness is a first coefficient, and the ratio of the fourth thickness to the second thickness is a first coefficient; a third photonic crystal is generated using a first dielectric material of a fifth thickness and a second dielectric material of a sixth thickness, wherein the ratio of the fifth thickness to the third thickness is a second coefficient, and the ratio of the sixth thickness to the fourth thickness is a second coefficient; the first photonic crystal and the second photonic crystal are spliced ​​together to obtain a first coupled cavity structure, and the first photonic crystal and the third photonic crystal are spliced ​​together to obtain a second coupled cavity structure; a filtering device is manufactured based on the first coupled cavity structure and the second coupled cavity structure.

[0017] In some embodiments of this disclosure, a filtering device is manufactured based on the first coupling cavity structure and the second coupling cavity structure, comprising:

[0018] The second photonic crystal in the first coupling cavity structure is spliced ​​with the third photonic crystal in the second coupling cavity structure to obtain the target coupling cavity structure; the filter device is manufactured based on the target coupling cavity structure.

[0019] In some embodiments of this disclosure, a first photonic crystal is generated based on a first dielectric material of a first thickness and a second dielectric material of a second thickness, including:

[0020] The first dielectric material of the first thickness and the second dielectric material of the second thickness are periodically arranged to obtain the first photonic crystal.

[0021] In some embodiments of this disclosure, the arrangement of the first dielectric material and the second dielectric material in the second photonic crystal and the third photonic crystal is the same as that in the first photonic crystal.

[0022] In some embodiments of this disclosure, the first dielectric material is magnesium fluoride and the second dielectric material is antimony trioxide.

[0023] In some embodiments of this disclosure, the first coefficient is 0.55 and the second coefficient is 0.35.

[0024] According to another aspect of this disclosure, an electronic device is provided, comprising: a processor; and a memory for storing executable instructions of the processor; wherein the processor is configured to perform the above-described method of manufacturing a filtering device by executing the executable instructions.

[0025] According to another aspect of this disclosure, a computer-readable storage medium is provided having a computer program stored thereon, which, when executed by a processor, implements the above-described method for manufacturing the filtering device.

[0026] According to another aspect of this disclosure, a computer program product or computer program is provided, comprising computer instructions stored in a computer-readable storage medium. A processor of a computer device reads the computer instructions from the computer-readable storage medium and executes the computer instructions, causing the computer device to perform a method of manufacturing a filtering device provided in various alternative embodiments of this disclosure.

[0027] The technical solution provided in this disclosure allows for the creation of a first photonic crystal, a second photonic crystal, and a third photonic crystal by setting first and second dielectric materials of different thicknesses. A first coupling cavity structure can be formed using the first and second photonic crystals, and a second coupling cavity structure can be formed using the first and third photonic crystals. Since combining the first and second coupling cavity structures can create a relatively wide photonic bandgap, this structure can be used for flat-top filtering. Furthermore, this disclosure allows for the creation of different first, second, and third photonic crystals by adjusting the thicknesses of the first and second dielectric materials, thereby adapting to the signal frequency bands being filtered in different scenarios. Therefore, the filtering device of this disclosure is flexible in design and simple in structure.

[0028] It should be understood that the above general description and the following detailed description are exemplary and explanatory only, and are not intended to limit this disclosure. Attached Figure Description

[0029] The accompanying drawings, which are incorporated in and form part of this specification, illustrate embodiments consistent with this disclosure and, together with the description, serve to explain the principles of this disclosure. It is obvious that the drawings described below are merely some embodiments of this disclosure, and those skilled in the art can obtain other drawings based on these drawings without any inventive effort.

[0030] Figure 1 This diagram illustrates a filtering device according to an embodiment of the present disclosure;

[0031] Figure 2 A schematic diagram of a first photonic crystal according to an embodiment of the present disclosure is shown;

[0032] Figure 3 A schematic diagram of a first coupling cavity structure 11 in an embodiment of the present disclosure is shown;

[0033] Figure 4 A schematic diagram of a second coupling cavity structure 12 in an embodiment of this disclosure is shown;

[0034] Figure 5 This diagram illustrates the splicing of a second photonic crystal in a first coupling cavity structure 11 and a third photonic crystal in a second coupling cavity structure 12 according to an embodiment of the present disclosure.

[0035] Figure 6 A flowchart illustrating a method for manufacturing a filter device according to an embodiment of this disclosure is shown;

[0036] Figure 7 A structural block diagram of an electronic device according to an embodiment of the present disclosure is shown. Detailed Implementation

[0037] Exemplary embodiments will now be described more fully with reference to the accompanying drawings. However, these exemplary embodiments can be implemented in many forms and should not be construed as limited to the examples set forth herein; rather, they are provided so that this disclosure will be more comprehensive and complete, and will fully convey the concept of the exemplary embodiments to those skilled in the art. The described features, structures, or characteristics may be combined in any suitable manner in one or more embodiments.

[0038] Furthermore, the accompanying drawings are merely illustrative of this disclosure and are not necessarily drawn to scale. The same reference numerals in the drawings denote the same or similar parts, and therefore repeated descriptions of them will be omitted. Some block diagrams shown in the drawings are functional entities and do not necessarily correspond to physically or logically independent entities. These functional entities may be implemented in software, in one or more hardware modules or integrated circuits, or in different network and / or processor devices and / or microcontroller devices.

[0039] To facilitate understanding, the following is an explanation of several terms used in this disclosure:

[0040] Photonic crystals are artificial microstructures formed by the periodic arrangement of media with different refractive indices. When electromagnetic waves propagate in a photonic crystal, they are modulated due to Bragg scattering, thus forming a band structure.

[0041] Photonic bandgap: By selecting dielectric materials with different refractive indices and setting the structural parameters of a photonic crystal, a band gap can be created between the energy band structures; this band gap is called the photonic bandgap. Since the propagation of photons with energy within the photonic bandgap is suppressed, photonic crystals can be used for signal frequency selection.

[0042] The following detailed description of this exemplary implementation method is provided in conjunction with the accompanying drawings and embodiments.

[0043] First, this disclosure provides a filtering device, which can be as described in the following embodiments.

[0044] Figure 1 A schematic diagram of a filtering device according to an embodiment of the present disclosure is shown, such as... Figure 1 As shown, the filtering device includes: a first coupling cavity structure 11 and a second coupling cavity structure 12.

[0045] The first coupling cavity structure 11 may include a first photonic crystal and a second photonic crystal; while the second coupling cavity structure 12 may include a first photonic crystal and a third photonic crystal.

[0046] The embodiments disclosed herein do not limit the types of the first photonic crystal, the second photonic crystal, and the third photonic crystal. The first photonic crystal, the second photonic crystal, and the third photonic crystal can be any artificial periodic dielectric structure with PBG (Photonic Band-Gap) characteristics.

[0047] For example, the first photonic crystal may include: a first dielectric material with a first thickness and a second dielectric material with a second thickness. The second photonic crystal may include: a first dielectric material with a third thickness and a second dielectric material with a fourth thickness. The third photonic crystal may include: a first dielectric material with a fifth thickness and a second dielectric material with a sixth thickness.

[0048] This disclosure does not limit the types of the first dielectric material and the second dielectric material. For example, the first dielectric material and the second dielectric material can be determined according to the signal frequency band required for the operation of the filtering device.

[0049] In some possible implementations, the signal frequency band of the filtering device can be adjusted by determining the dielectric constants of the first dielectric material and the second dielectric material.

[0050] In one possible implementation, the first dielectric material may be magnesium fluoride, and the second dielectric material may be antimony trioxide.

[0051] It should be noted that the embodiments disclosed herein do not limit the preparation methods of the first photonic crystal, the second photonic crystal, and the third photonic crystal. Exemplary examples, the first photonic crystal, the second photonic crystal, and the third photonic crystal can be prepared by methods such as electrophoresis, induced ordering, natural sedimentation, centrifugal deposition, and forced ordering.

[0052] Furthermore, the first thickness and the second thickness in this embodiment can be determined based on the properties of different dielectric materials and the application scenario. For example, if the first dielectric material is magnesium fluoride and the second dielectric material is antimony trioxide, the first thickness can be 242 nanometers and the second thickness can be 160 nanometers.

[0053] In some embodiments, the ratio of the third thickness to the first thickness can be a first coefficient, the ratio of the fourth thickness to the second thickness can be a first coefficient, the ratio of the fifth thickness to the first thickness can be a second coefficient, and the ratio of the sixth thickness to the second thickness can be a second coefficient.

[0054] It should be noted that the embodiments disclosed herein do not limit the values ​​of the first coefficient and the second coefficient, which can be determined based on the application scenario or experience.

[0055] For example, the operating bandwidth of the filter can be adjusted by setting different first and second coefficients. In one possible implementation, the first coefficient can be 0.55 and the second coefficient can be 0.35.

[0056] In some embodiments, the first photonic crystal can be obtained by periodically arranging the first dielectric material and the second dielectric material; the arrangement of the first dielectric material and the second dielectric material in the second photonic crystal and the third photonic crystal is the same as the arrangement in the first photonic crystal.

[0057] For example, a schematic diagram of a first photonic crystal can be shown as follows: Figure 2 As shown. In Figure 2 The first dielectric material is shown in the black box, while the second dielectric material can be shown in the white box. Therefore, according to... Figure 2 It can be seen that the first photonic crystal is obtained by periodically arranging the first dielectric material and the second dielectric material.

[0058] In an exemplary embodiment, the schematic diagrams of the second photonic crystal and the third photonic crystal can be similar to those of the first photonic crystal, the difference being that the thicknesses of the first dielectric material and the second dielectric material are different.

[0059] Since the first coupling cavity structure 11 may include a first photonic crystal and a second photonic crystal, a possible schematic diagram of the first coupling cavity structure 11 in an exemplary embodiment can be as follows: Figure 3 As shown.

[0060] exist Figure 3 In this structure, a first dielectric material of a first thickness and a second dielectric material of a second thickness constitute a first photonic crystal. A third dielectric material of the first thickness and a fourth dielectric material of the second thickness constitute a second photonic crystal. The first and second photonic crystals are then joined to form a first coupled cavity structure 11.

[0061] Similarly, in one possible implementation, a schematic diagram of the second coupling cavity structure 12 can be shown as follows: Figure 4 As shown.

[0062] exist Figure 4 In this structure, a first dielectric material of a first thickness and a second dielectric material of a second thickness constitute a first photonic crystal. A fifth thickness of the first dielectric material and a sixth thickness of the second dielectric material constitute a third photonic crystal. The first and third photonic crystals are then joined to form a second coupled cavity structure 12.

[0063] In some embodiments, the filtering device is obtained by splicing the second photonic crystal in the first coupling cavity structure 11 and the third photonic crystal in the second coupling cavity structure 12.

[0064] In an exemplary embodiment, a schematic diagram showing the splicing of the second photonic crystal in the first coupling cavity structure 11 and the third photonic crystal in the second coupling cavity structure 12 can be shown as follows: Figure 5 As shown.

[0065] exist Figure 5 In this case, the first photonic crystal can be an N-layer, the second photonic crystal an M-layer, and the third photonic crystal a P-layer.

[0066] Alternatively, we can define the thickness of layer N as unit thickness, the first coefficient as a, and the second coefficient as b, where a and b are both rational numbers greater than zero. Therefore, the thickness of layer M is unit thickness × a, and the thickness of layer P is unit thickness × b. Thus, by splicing layers M and P, the filtering device can be obtained.

[0067] It should be noted that connecting the first coupling cavity structure 11 and the second coupling cavity structure 12 can form a relatively wide photonic bandgap. Since the photonic bandgap frequencies of the first coupling cavity structure 11 and the second coupling cavity structure 12 are similar, the top of the total photonic bandgap formed by the first coupling cavity structure 11 and the second coupling cavity structure 12 is relatively flat. Therefore, this filtering device can be used to design flat-top filters.

[0068] Furthermore, for a specific flat-top filter signal frequency band, it can be adapted by adjusting the refractive index of the first dielectric material and the second dielectric material, the thickness of the first dielectric material and the second dielectric material, as well as the first coefficient and the second coefficient.

[0069] The filtering device provided in this disclosure can obtain a first photonic crystal, a second photonic crystal, and a third photonic crystal by setting first and second dielectric materials of different thicknesses. A first coupling cavity structure can be formed by the first and second photonic crystals, and a second coupling cavity structure can be formed by the first and third photonic crystals. Since a relatively wide photonic bandgap can be formed by combining the first and second coupling cavity structures, this structure can be used for flat-top filtering. Furthermore, this disclosure allows for different first, second, and third photonic crystals to be obtained by adjusting the thickness of the first and second dielectric materials, thereby adapting to the signal frequency bands to be filtered in different scenarios. Therefore, the filtering device of this disclosure is flexible in design and simple in structure.

[0070] Figure 6 A flowchart illustrating a method for manufacturing a filtering device according to an embodiment of the present disclosure is shown. This method can be performed by any electronic device with computing power.

[0071] like Figure 6 As shown, the manufacturing method of the filtering device provided in this embodiment includes the following steps S602 to S610.

[0072] S602, a first photonic crystal is generated based on a first dielectric material of a first thickness and a second dielectric material of a second thickness.

[0073] In some embodiments, the first dielectric material may be magnesium fluoride, and the second dielectric material may be antimony trioxide.

[0074] In some embodiments, generating a first photonic crystal based on a first dielectric material of a first thickness and a second dielectric material of a second thickness includes: periodically arranging the first dielectric material of the first thickness and the second dielectric material of the second thickness to obtain the first photonic crystal.

[0075] S604, a second photonic crystal is generated based on a first dielectric material of a third thickness and a second dielectric material of a fourth thickness, wherein the ratio of the third thickness to the first thickness is a first coefficient, and the ratio of the fourth thickness to the second thickness is a first coefficient.

[0076] S606, a third photonic crystal is generated based on a first dielectric material of a fifth thickness and a second dielectric material of a sixth thickness, wherein the ratio of the fifth thickness to the third thickness is a second coefficient, and the ratio of the sixth thickness to the fourth thickness is a second coefficient.

[0077] It should be noted that the embodiments disclosed herein do not limit the order in which S604 and S606 are executed. For example, S604 may be executed first and then S606, or S606 may be executed first and then S604, or S604 and S606 may be executed simultaneously.

[0078] In some embodiments, the arrangement of the first dielectric material and the second dielectric material in the second photonic crystal and the third photonic crystal is the same as that in the first photonic crystal.

[0079] In some embodiments, the first coefficient may be 0.55 and the second coefficient may be 0.35.

[0080] S608, the first photonic crystal is spliced ​​with the second photonic crystal to obtain a first coupled cavity structure, and the first photonic crystal is spliced ​​with the third photonic crystal to obtain a second coupled cavity structure.

[0081] S610, a filter device is manufactured based on the first coupling cavity structure and the second coupling cavity structure.

[0082] In some embodiments, manufacturing a filtering device based on the first coupling cavity structure and the second coupling cavity structure includes: splicing a second photonic crystal in the first coupling cavity structure with a third photonic crystal in the second coupling cavity structure to obtain the target coupling cavity structure; and manufacturing the filtering device based on the target coupling cavity structure.

[0083] In an exemplary embodiment, a schematic diagram of the target coupling cavity structure can be shown as follows: Figure 5 As shown. In one possible implementation, the target coupling cavity structure can be directly used as a filtering device. Alternatively, a filtering device can be manufactured using the target coupling cavity structure. In this case, the embodiments of this disclosure do not limit the method of manufacturing the filtering device using the target coupling cavity structure.

[0084] It should be noted that the implementation methods of S602 to S610 can be found in the above description. Figure 1 The relevant descriptions of the corresponding filtering devices will not be repeated here.

[0085] The method for manufacturing a filtering device provided in this disclosure allows for the formation of a first photonic crystal, a second photonic crystal, and a third photonic crystal by setting first and second dielectric materials of different thicknesses. The first and second photonic crystals can be combined to form a first coupling cavity structure, and the first and third photonic crystals can be combined to form a second coupling cavity structure. Since combining the first and second coupling cavity structures can create a relatively wide photonic bandgap, this structure can be used for flat-top filtering. Furthermore, this disclosure allows for the formation of different first, second, and third photonic crystals by adjusting the thickness of the first and second dielectric materials, thereby adapting to the signal frequency bands being filtered in different scenarios. Therefore, the filtering device manufactured by the method provided in this disclosure is flexible in design and simple in structure.

[0086] Those skilled in the art will understand that various aspects of this disclosure can be implemented as a system, method, or program product. Therefore, various aspects of this disclosure can be specifically implemented in the following forms: a completely hardware implementation, a completely software implementation (including firmware, microcode, etc.), or a combination of hardware and software aspects, collectively referred to herein as a "circuit," "module," or "system."

[0087] The following reference Figure 7 To describe an electronic device 700 according to such an embodiment of the present disclosure. Figure 7 The electronic device 700 shown is merely an example and should not impose any limitation on the functionality and scope of use of the embodiments disclosed herein.

[0088] like Figure 7 As shown, the electronic device 700 is manifested in the form of a general-purpose computing device. The components of the electronic device 700 may include, but are not limited to: at least one processing unit 710, at least one storage unit 720, and a bus 730 connecting different system components (including storage unit 720 and processing unit 710).

[0089] The storage unit stores program code that can be executed by the processing unit 710, causing the processing unit 710 to perform the steps described in the "Detailed Description" section of this specification according to various exemplary embodiments of this disclosure.

[0090] Storage unit 720 may include a readable medium in the form of a volatile storage unit, such as random access memory (RAM) 7201 and / or cache memory 7202, and may further include a read-only memory (ROM) 7203.

[0091] The storage unit 720 may also include a program / utility 7204 having a set (at least one) program module 7205, such program module 7205 including but not limited to: an operating system, one or more application programs, other program modules and program data, each or some combination of these examples may include an implementation of a network environment.

[0092] Bus 730 can represent one or more of several types of bus structures, including a memory cell bus or memory cell controller, a peripheral bus, a graphics acceleration port, a processing unit, or a local bus using any of the various bus structures.

[0093] Electronic device 700 can also communicate with one or more external devices 740 (e.g., keyboard, pointing device, Bluetooth device, etc.), and with one or more devices that enable a user to interact with electronic device 700, and / or with any device that enables electronic device 700 to communicate with one or more other computing devices (e.g., router, modem, etc.). This communication can be performed via input / output (I / O) interface 750. Furthermore, electronic device 700 can also communicate with one or more networks (e.g., local area network (LAN), wide area network (WAN), and / or public networks, such as the Internet) via network adapter 760. As shown, network adapter 760 communicates with other modules of electronic device 700 via bus 730. It should be understood that, although not shown in the figures, other hardware and / or software modules can be used in conjunction with electronic device 700, including but not limited to: microcode, device drivers, redundant processing units, external disk drive arrays, RAID systems, tape drives, and data backup storage systems.

[0094] From the above description of the embodiments, those skilled in the art will readily understand that the exemplary embodiments described herein can be implemented by software or by combining software with necessary hardware. Therefore, the technical solutions according to the embodiments of this disclosure can be embodied in the form of a software product, which can be stored in a non-volatile storage medium (such as a CD-ROM, USB flash drive, external hard drive, etc.) or on a network, including several instructions to cause a computing device (such as a personal computer, server, terminal device, or network device, etc.) to execute the methods according to the embodiments of this disclosure.

[0095] In exemplary embodiments of this disclosure, a computer-readable storage medium is also provided, which may be a readable signal medium or a readable storage medium. A program product capable of implementing the methods described above is stored thereon. In some possible implementations, various aspects of this disclosure may also be implemented as a program product including program code, which, when run on a terminal device, causes the terminal device to perform the steps of the various exemplary embodiments of this disclosure described in the "Detailed Description" section of this specification.

[0096] More specific examples of computer-readable storage media in this disclosure may include, but are not limited to: electrical connections having one or more wires, portable computer disks, hard disks, random access memory (RAM), read-only memory (ROM), erasable programmable read-only memory (EPROM or flash memory), optical fiber, portable compact disk read-only memory (CD-ROM), optical storage devices, magnetic storage devices, or any suitable combination of the foregoing.

[0097] In this disclosure, a computer-readable storage medium may include a data signal propagated in baseband or as part of a carrier wave, carrying readable program code. Such propagated data signals may take various forms, including but not limited to electromagnetic signals, optical signals, or any suitable combination thereof. A readable signal medium may also be any readable medium other than a readable storage medium, capable of transmitting, propagating, or transmitting a program for use by or in connection with an instruction execution system, apparatus, or device.

[0098] Optionally, the program code contained on the computer-readable storage medium may be transmitted using any suitable medium, including but not limited to wireless, wired, optical fiber, RF, etc., or any suitable combination thereof.

[0099] In practical implementation, program code for performing the operations of this disclosure can be written in any combination of one or more programming languages, including object-oriented programming languages ​​such as Java and C++, and conventional procedural programming languages ​​such as C or similar languages. The program code can execute entirely on the user's computing device, partially on the user's device, as a standalone software package, partially on the user's computing device and partially on a remote computing device, or entirely on a remote computing device or server. In cases involving remote computing devices, the remote computing device can be connected to the user's computing device via any type of network, including a local area network (LAN) or a wide area network (WAN), or it can be connected to an external computing device (e.g., via the Internet using an Internet service provider).

[0100] It should be noted that although several modules or units for the device used to perform actions have been mentioned in the detailed description above, this division is not mandatory. In fact, according to embodiments of this disclosure, the features and functions of two or more modules or units described above can be embodied in one module or unit. Conversely, the features and functions of one module or unit described above can be further divided and embodied by multiple modules or units.

[0101] Furthermore, although the steps of the method in this disclosure are described in a specific order in the accompanying drawings, this does not require or imply that the steps must be performed in that specific order, or that all the steps shown must be performed to achieve the desired result. Additional or alternative steps may be omitted, multiple steps may be combined into one step, and / or a step may be broken down into multiple steps.

[0102] From the above description of the embodiments, those skilled in the art will readily understand that the exemplary embodiments described herein can be implemented by software or by combining software with necessary hardware. Therefore, the technical solutions according to the embodiments of this disclosure can be embodied in the form of a software product, which can be stored in a non-volatile storage medium (such as a CD-ROM, USB flash drive, external hard drive, etc.) or on a network, including several instructions to cause a computing device (such as a personal computer, server, mobile terminal, or network device, etc.) to execute the methods according to the embodiments of this disclosure.

[0103] Other embodiments of this disclosure will readily occur to those skilled in the art upon consideration of the specification and practice of the invention disclosed herein. This disclosure is intended to cover any variations, uses, or adaptations of this disclosure that follow the general principles of this disclosure and include common knowledge or customary techniques in the art not disclosed herein. The specification and examples are to be considered exemplary only, and the true scope of this disclosure is indicated by the appended claims.

Claims

1. A filtering device, characterized in that, include: First coupling cavity structure and second coupling cavity structure; The first coupling cavity structure includes: a first photonic crystal and a second photonic crystal; The second coupling cavity structure includes: a first photonic crystal and a third photonic crystal; The first photonic crystal includes: a first dielectric material with a first thickness and a second dielectric material with a second thickness; the second photonic crystal includes: a first dielectric material with a third thickness and a second dielectric material with a fourth thickness; the third photonic crystal includes: a first dielectric material with a fifth thickness and a second dielectric material with a sixth thickness. The ratio of the third thickness to the first thickness is a first coefficient, the ratio of the fourth thickness to the second thickness is a first coefficient, the ratio of the fifth thickness to the first thickness is a second coefficient, and the ratio of the sixth thickness to the second thickness is a second coefficient. The filtering device is obtained by splicing the second photonic crystal in the first coupling cavity structure and the third photonic crystal in the second coupling cavity structure. The splicing of the first coupling cavity structure and the second coupling cavity structure forms a photonic bandgap for flat-top filtering. The first photonic crystal is obtained by periodically arranging the first dielectric material and the second dielectric material. The arrangement of the first dielectric material and the second dielectric material in the second photonic crystal and the third photonic crystal is the same as the arrangement in the first photonic crystal.

2. The filtering device according to claim 1, characterized in that, The first dielectric material is magnesium fluoride, and the second dielectric material is antimony trioxide.

3. The filtering device according to claim 1, characterized in that, The first coefficient is 0.55, and the second coefficient is 0.

35.

4. A method for manufacturing a filter device, characterized in that, include: A first photonic crystal is generated based on a first dielectric material of a first thickness and a second dielectric material of a second thickness. A second photonic crystal is generated based on a first dielectric material of a third thickness and a second dielectric material of a fourth thickness, wherein the ratio of the third thickness to the first thickness is a first coefficient, and the ratio of the fourth thickness to the second thickness is a first coefficient. A third photonic crystal is generated based on a first dielectric material with a fifth thickness and a second dielectric material with a sixth thickness, wherein the ratio of the fifth thickness to the third thickness is a second coefficient, and the ratio of the sixth thickness to the fourth thickness is a second coefficient. The first photonic crystal and the second photonic crystal are spliced ​​together to obtain a first coupled cavity structure, and the first photonic crystal and the third photonic crystal are spliced ​​together to obtain a second coupled cavity structure. A filtering device is manufactured based on the first coupling cavity structure and the second coupling cavity structure. The second photonic crystal in the first coupling cavity structure and the third photonic crystal in the second coupling cavity structure are spliced ​​together to obtain the filtering device. The splicing of the first coupling cavity structure and the second coupling cavity structure forms a photonic bandgap for flat-top filtering. The first photonic crystal is obtained by periodically arranging the first dielectric material and the second dielectric material. The arrangement of the first dielectric material and the second dielectric material in the second photonic crystal and the third photonic crystal is the same as the arrangement in the first photonic crystal.

5. The method for manufacturing the filter device according to claim 4, characterized in that, The step of generating a first photonic crystal based on a first dielectric material of a first thickness and a second dielectric material of a second thickness includes: The first photonic crystal is obtained by periodically arranging the first dielectric material of the first thickness and the second dielectric material of the second thickness.

6. The method for manufacturing the filter device according to claim 4, characterized in that, The arrangement of the first dielectric material and the second dielectric material in the second photonic crystal and the third photonic crystal is the same as that in the first photonic crystal.

7. A method for manufacturing a filter device according to any one of claims 4 to 6, characterized in that, The first dielectric material is magnesium fluoride, and the second dielectric material is antimony trioxide.

8. A method for manufacturing a filter device according to any one of claims 4 to 6, characterized in that, The first coefficient is 0.55, and the second coefficient is 0.35.

Citation Information

Patent Citations

  • One-dimensional photonic crystal solar blind ultraviolet band-pass filter

    CN109116457A