Light emitting element array substrate and manufacturing method thereof
By forming an adhesive structure with closed openings on the carrier plate, the position shift problem of the micro-light emitting diode grains during the transfer process is solved, and high-precision transfer and alignment of the light emitting element array substrate is realized.
Patent Information
- Application Number
- CN202211404179.8
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Priority Date
- 2022-07-27
- Filing Date
- 2022-11-10
- Publication Date
- 2025-08-26
- Estimated Expiration
- 2042-11-10
AI Technical Summary
During the multiple huge transfers of micro-light emitting diode grains, the removal of the adhesive material causes the grain position to shift, affecting the alignment accuracy and transfer accuracy.
An adhesive structure with a closed opening is formed on the carrier plate to ensure that the outer contour of the closed opening surrounds the light-emitting element group and that the minimum spacing between the inner side wall and the light-emitting element is greater than or equal to the minimum spacing between the light-emitting elements to prevent offset.
The alignment accuracy and transfer accuracy of the light emitting element array substrate are improved, and subsequent transfer accuracy decreases due to offset are avoided.
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Figure CN115763351B_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to a light emitting element array substrate and a manufacturing method thereof. Background Art
[0002] Due to the extremely small size of micro-LEDs, the current method for manufacturing micro-LED light-emitting element array substrates uses multiple mass transfer techniques to gradually transfer the micro-LED dies (bare chips) to a driver substrate with pixel circuits. The micro-LED dies are temporarily fixed to different transfer carriers using adhesive materials to achieve the desired results for each transfer.
[0003] During the multiple mass transfer processes, the pads of the micro-LED die are covered by adhesive. Therefore, during the subsequent transfer process, the adhesive covering the pads must be removed to allow the micro-LED die to connect to external components. However, during this process, the adhesive securing the micro-LED die to the transfer carrier is also removed, causing the position of the micro-LED die on the transfer carrier to shift, thereby affecting the alignment accuracy of the micro-LED die and the transfer accuracy in subsequent transfer steps. Summary of the Invention
[0004] The present invention provides a light emitting element array substrate with good alignment accuracy.
[0005] The present invention provides a method for manufacturing a light emitting element array substrate, which has good transfer accuracy.
[0006] One embodiment of the present invention provides a light-emitting element array substrate, comprising: a carrier; a plurality of light-emitting element groups disposed on the carrier, each of the plurality of light-emitting element groups including a plurality of light-emitting elements; and an adhesive structure located between the plurality of light-emitting element groups and the carrier, and having a plurality of closed openings, wherein outer contours of the plurality of closed openings respectively surround the plurality of light-emitting element groups, the plurality of closed openings respectively have a first inner sidewall, and a minimum spacing between the first inner sidewall and the plurality of light-emitting element groups is greater than or equal to a minimum spacing between the plurality of light-emitting elements.
[0007] One embodiment of the present invention provides a method for manufacturing a light-emitting element array substrate, comprising: providing a first carrier, on which a plurality of light-emitting element groups are disposed, each of the plurality of light-emitting element groups including a plurality of light-emitting elements; providing a second carrier, on which an adhesive structure is disposed; forming a plurality of closed openings in the adhesive structure; and transferring the plurality of light-emitting element groups from the first carrier to the second carrier, and fixing the plurality of light-emitting element groups to the adhesive structures respectively surrounded by outer contours of the plurality of closed openings.
[0008] In order to make the above features and advantages of the present invention more clearly understood, embodiments are given below and described in detail with reference to the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS
[0009] Figures 1A to 4D 1 is a partial top view and a cross-sectional view of the steps of a method for manufacturing a light emitting element array substrate 10 according to an embodiment of the present invention;
[0010] Figure 5 is a partial top view of a light emitting element array substrate 20 according to an embodiment of the present invention;
[0011] 6A to 7D 1 is a partial top view and a cross-sectional view of the steps of a method for manufacturing a light emitting element array substrate 30 according to an embodiment of the present invention;
[0012] Figure 8 is a partial top view of a light emitting element array substrate 40 according to an embodiment of the present invention;
[0013] 9A to 10D 1 is a partial top view and a cross-sectional view of the steps of a method for manufacturing a light emitting element array substrate 50 according to an embodiment of the present invention;
[0014] Figure 11 is a partial top view of a light emitting element array substrate 60 according to an embodiment of the present invention;
[0015] 12A to 12D FIG. 1 is a partial cross-sectional diagram illustrating the steps of a method for manufacturing a light emitting element array substrate 70 according to an embodiment of the present invention.
[0016] Explanation of symbols
[0017] 10~70: Light-emitting element array substrate
[0018] A-A', B-B', C-C', D-D', E-E', F-F': hatching
[0019] AC: Central District
[0020] AL: Adhesive layer
[0021] AM: Adhesive
[0022] AP: Peripheral area
[0023] AS: Adhesive structure
[0024] BS:Laser
[0025] C1: First carrier board
[0026] C2: Second carrier board
[0027] CK: Crack
[0028] D1: First direction
[0029] D2: Second direction
[0030] DO1, DO5: Depth
[0031] ES:Semiconductor stack
[0032] EU:Insulation layer
[0033] G1, G2, G3: Minimum spacing
[0034] G4: Spacing
[0035] GS: Growth substrate
[0036] HU: Spacing
[0037] LB, LD, LG, LR: light-emitting elements
[0038] LS,LS1,LS2,LS3,LS4: Light emitting element group
[0039] MK:Mask
[0040] O1, O2, O3, O4, O5: Close the opening
[0041] OP1, OP2, OP3: Opening
[0042] OW1, OW5: Width
[0043] PD1: First pad
[0044] PD2: Second pad
[0045] PL: Protective layer
[0046] PO: Outer contour
[0047] PR: Photoresist
[0048] PX: Pixel
[0049] SP: Sub-Pixel
[0050] TA: Total thickness
[0051] W1, W2, W3, W4: inner wall DETAILED DESCRIPTION
[0052] In the accompanying drawings, the thickness of layers, films, panels, regions, etc. is exaggerated for clarity. Throughout the specification, the same reference numerals represent the same elements. It should be understood that when an element such as a layer, film, region or substrate is referred to as being "on" or "connected to" another element, it can be directly on or connected to another element, or an intermediate element can also exist. Conversely, when an element is referred to as being "directly on" or "directly connected to" another element, there is no intermediate element. As used herein, "connection" can refer to physical and / or electrical connection. Furthermore, "electrical connection" or "coupling" can mean the presence of other elements between two elements.
[0053] It should be understood that although the terms "first," "second," "third," etc. may be used herein to describe various elements, components, regions, layers, and / or sections, these elements, components, regions, layers, and / or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer, or section from another element, component, region, layer, or section. Thus, a first "element," "component," "region," "layer," or "section" discussed below could be termed a second element, component, region, layer, or section without departing from the teachings herein.
[0054] Additionally, relative terms such as "lower" or "bottom" and "upper" or "top" may be used herein to describe one element's relationship to another element, as shown in the figures. It should be understood that relative terms are intended to encompass different orientations of the device in addition to the orientation shown in the figures. For example, if the device in one of the figures is turned over, an element described as being on the "lower" side of the other elements would then be oriented on the "upper" side of the other elements. Thus, the exemplary term "lower" can encompass both "lower" and "upper" orientations, depending on the particular orientation of the figure. Similarly, if the device in one of the figures is turned over, an element described as being "lower" or "beneath" other elements would then be oriented "above" the other elements. Thus, the exemplary terms "lower" or "beneath" can encompass both "upper" and "lower" orientations.
[0055] As used herein, "about," "approximately," or "substantially" includes the stated value and an average value within an acceptable range of deviation for the particular value as determined by one of ordinary skill in the art, taking into account the particular measurement in question and the particular amount of error associated with the measurement (i.e., the limitations of the measurement system). For example, "about" can mean within one or more standard deviations of the stated value, or within ±30%, ±20%, ±10%, or ±5%. Furthermore, as used herein, "about," "approximately," or "substantially" may be used to select a more acceptable range of deviations or standard deviations depending on the optical property, etching property, or other property, rather than using a single standard deviation for all properties.
[0056] Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which the invention belongs. It will be further understood that terms such as those defined in commonly used dictionaries should be interpreted as having a meaning consistent with their meaning in the context of the relevant art and the present invention, and will not be interpreted as idealized or overly formal unless explicitly defined as such herein.
[0057] Exemplary embodiments are described herein with reference to cross-sectional views that are schematic representations of idealized embodiments. Thus, variations in the shapes of the illustrations as a result of, for example, manufacturing techniques and / or tolerances, are to be expected. Therefore, the embodiments described herein should not be construed as limited to the specific shapes of the regions as shown herein, but rather include deviations in shape that result, for example, from manufacturing. For example, a region shown or described as flat may typically have rough and / or nonlinear features. Furthermore, sharp angles shown may be rounded. Therefore, the regions shown in the figures are schematic in nature, and their shapes are not intended to illustrate the precise shape of the regions and are not intended to limit the scope of the claims.
[0058] Figures 1A to 4D The following is a partial top view and cross-sectional view of the steps of the manufacturing method of the light emitting element array substrate 10 according to an embodiment of the present invention. Figures 1A to 4D A method for manufacturing the light emitting element array substrate 10 will be described.
[0059] Please refer to Figure 1A to Figure 1B The light emitting element LD is transferred from the growth substrate GS to the adhesive AM on the first carrier C1, so that the light emitting element LD is fixed to the first carrier C1 through the adhesive AM to provide a first carrier C1 on which a plurality of light emitting elements LD are arranged.
[0060] In some embodiments, the light emitting element LD may be first attached to the adhesive AM so that the light emitting element LD is located between the growth substrate GS and the first carrier C1. Then, the growth substrate GS is removed to expose the semiconductor stack ES of the light emitting element LD. The growth substrate GS may be removed by, for example, a laser lift-off process, but the present invention is not limited thereto. Figure 1B As shown, after the light emitting device LD is transferred to the first carrier C1 , the first pad PD1 and the second pad PD2 of the light emitting device LD may be adhered to the adhesive AM, and the first pad PD1 and the second pad PD2 may be located between the semiconductor stack ES and the adhesive AM.
[0061] Specifically, the light-emitting element LD can be formed on a growth substrate GS. The growth substrate GS can be, for example, a sapphire substrate, but the present invention is not limited thereto. In some embodiments, the method for forming the light-emitting element LD may include performing an epitaxial process using appropriate reactants to deposit the desired thin film, followed by patterning the thin film through photolithography and etching processes to form the various sublayers of the light-emitting element LD. In some embodiments, a doping process may also be performed selectively on some of the sublayers of the light-emitting element LD.
[0062] For example, in some embodiments, the light-emitting element LD may include a semiconductor stack ES, a first pad PD1, a second pad PD2, and an insulating layer EU, wherein the first pad PD1 and the second pad PD2 are electrically connected to different sublayers of the semiconductor stack ES, respectively. The insulating layer EU may be located between a portion of the first pad PD1 and the semiconductor stack ES, and between a portion of the second pad PD2 and the semiconductor stack ES, without affecting the electrical connections between the first pad PD1 and the second pad PD2 and the different sublayers of the semiconductor stack ES. In this embodiment, the first pad PD1 and the second pad PD2 of the light-emitting element LD are located on the same side of the semiconductor stack ES, but the present invention is not limited thereto. In some embodiments, the first pad PD1 and the second pad PD2 may be located on different sides of the semiconductor stack ES.
[0063] For example, the semiconductor stack ES may include a stack of a P-type doped semiconductor layer, a multi-quantum well structure (MQW), and an N-type doped semiconductor layer, wherein the multi-quantum well structure may be located between the P-type doped semiconductor layer and the N-type doped semiconductor layer. The material of the P-type doped semiconductor layer may be, for example, a P-type Group II-VI material (e.g., zinc selenide (ZnSe)), a P-type Group III-V nitride material (e.g., gallium nitride (GaN), aluminum nitride (AlN), indium nitride (InN), indium gallium nitride (InGaN), aluminum gallium nitride (AlGaN), or aluminum indium gallium nitride (AlInGaN)), or a stack thereof. The material of the N-type doped semiconductor layer may be, for example, an N-type Group II-VI material, an N-type Group III-V nitride material, or a stack thereof. The multi-quantum well structure may include alternating layers of Group II-VI materials and Group III-V nitride materials, but the present invention is not limited thereto. The materials of the first pad PD1 and the second pad PD2 may include, for example, metal (such as tin), alloy, metal nitride, metal oxide, metal oxynitride, graphene, stacked layers of metal materials, or stacked layers of other conductive materials.
[0064] Please refer to Figure 1AA layer of adhesive material AM may be formed on the first carrier C1. The first carrier C1 may be a rigid substrate, such as a glass substrate, a quartz substrate, or a ceramic substrate, but the present invention is not limited thereto. The adhesive material AM may be formed on the first carrier C1 by coating, but the present invention is not limited thereto. The adhesive material AM may include an adhesive material such as an acrylic resin.
[0065] Please refer to Figure 2 A second carrier C2 is provided, and an adhesive layer AL is formed on the second carrier C2. The second carrier C2 may be a glass substrate, a quartz substrate, or a ceramic substrate, but the present invention is not limited thereto. In this embodiment, the adhesive layer AL may be formed on the second carrier C2 by coating, and the adhesive layer AL may include an adhesive material such as an acrylic resin, but the present invention is not limited thereto.
[0066] Please refer to Figure 3A , the adhesive layer AL is patterned using a mask MK and a laser BS to form a plurality of closed openings O1 in the adhesive layer AL. Figure 3B and Figure 3C As shown, Figure 3C For the Figure 3B Schematic cross-sectional view taken along the section line A-A' of FIG. For example, the mask MK may have an opening OP1. After the portion of the adhesive layer AL corresponding to the opening OP1 is exposed to the laser BS, it may be hardened. The hardened portion of the adhesive layer AL may then be removed by a development process to form a closed opening O1 in the adhesive layer AL. In this embodiment, the adhesive structure AS may include an adhesive layer AL having a closed opening O1. In some embodiments, the closed opening O1 may be formed by laser cutting. The closed opening O1 may have a circular polygonal outline, for example, Figure 3B As shown, the closed opening O1 may have an annular quadrilateral outline.
[0067] Please refer to Figure 4A , transferring the plurality of light emitting elements LD from the first carrier C1 to the second carrier C2, and fixing the plurality of light emitting elements LD on the adhesive layer AL, as shown in FIG. Figure 4B As shown. For example, a laser lift-off (LLO) process can be used to separate the light-emitting element LD from the first carrier C1, thereby transferring the light-emitting element LD to the portion of the adhesive layer AL surrounding the closed opening O1. This allows multiple light-emitting elements LD to be located on the portion of the adhesive layer AL surrounding the closed opening O1. In this embodiment, the multiple light-emitting elements LD surrounding each closed opening O1 can be referred to as a light-emitting element group LS. In some embodiments, the adhesive material AM attached to the light-emitting element LD may be separated from the first carrier C1 along with the light-emitting element LD. Therefore, the light-emitting element LD separated from the first carrier C1 may be covered with the adhesive material AM.
[0068] Then, the adhesive AM on the light emitting element LD can be removed to form Figure 4C and Figure 4D The light emitting element array substrate 10 shown in FIG. Figure 4D For the Figure 4C Schematic cross-sectional view taken along section line BB' of FIG. The adhesive material AM can be removed using a plasma etching process, but the present invention is not limited thereto. Because the adhesive layer AL is made of a material similar to the adhesive material AM, a portion of the adhesive layer AL may be removed during the removal of the adhesive material AM, forming a crack CK in the adhesive layer AL. In this embodiment, by sealing the opening O1 to prevent the crack CK from extending to the adhesive layer AL below the light-emitting element group LS, the position of the light-emitting element LD in the light-emitting element group LS can be prevented from shifting. This prevents the light-emitting element LD from shifting further during the subsequent transfer process, which could affect the transfer accuracy of the light-emitting element LD.
[0069] like Figure 4C and Figure 4D As shown, the light-emitting element array substrate 10 includes: a second carrier C2, multiple light-emitting element groups LS, and an adhesive structure AS. The multiple light-emitting element groups LS are disposed on the second carrier C2, and each of the multiple light-emitting element groups LS may include multiple light-emitting elements LD. The adhesive structure AS is located between the multiple light-emitting element groups LS and the second carrier C2 and includes an adhesive layer AL. The adhesive structure AS has multiple enclosed openings O1, wherein the outer contours PO of the multiple enclosed openings O1 respectively surround the multiple light-emitting element groups LS. The multiple enclosed openings O1 each have an inner sidewall W1, and the minimum spacing G1 between the inner sidewall W1 and the multiple light-emitting element groups LS is greater than or equal to the minimum spacing G2 between the light-emitting elements LD.
[0070] Specifically, the minimum spacing G2 between the light-emitting elements LD is determined based on the transfer error of the light-emitting elements LD. Therefore, when the minimum spacing G1 between the inner sidewall W1 and the light-emitting elements LD is less than the minimum spacing G2 between the light-emitting elements LD, the light-emitting elements LD may shift due to the transfer error to partially overhang the closed opening O1, causing the light-emitting elements LD to tilt and fall onto the adhesive structure AS, affecting the accuracy of the subsequent transfer of the light-emitting elements LD. By ensuring that the minimum spacing G1 between the inner sidewall W1 and the plurality of light-emitting elements LD is greater than or equal to the minimum spacing G2 between the light-emitting elements LD, the shift of the light-emitting elements LD can be prevented from exceeding the tolerance, thereby ensuring that the light-emitting element array substrate 10 has good alignment accuracy and preventing the subsequent transfer accuracy of the light-emitting elements LD from being affected.
[0071] In this embodiment, the inner sidewall W1 may face away from the enclosed light emitting element group LS, but the present invention is not limited thereto. In this embodiment, each closed opening O1 further has an inner sidewall W2, which faces the enclosed light emitting element group LS and is opposite to the inner sidewall W1.
[0072] In some embodiments, the minimum spacing G3 between the light emitting element groups LS is greater than or equal to the minimum spacing G2 between the light emitting elements LD, so as to prevent the deviation of the light emitting elements LD from causing a short circuit between the light emitting element groups LS.
[0073] In some embodiments, the spacing G4 between the closed openings O1 may be greater than zero. In other words, a portion of the adhesive structure AS exists between the closed openings O1, so that the closed openings O1 are not connected and are separated from each other, and the spacing G4 between the closed openings O1 is less than the minimum spacing G3 between the light-emitting element groups LS.
[0074] In this embodiment, each light-emitting element group LS may include three light-emitting elements LD. For example, each light-emitting element group LS includes a red light-emitting element LR, a green light-emitting element LG, and a blue light-emitting element LB, but the present invention is not limited thereto. For example, the red light-emitting element LR, the green light-emitting element LG, and the blue light-emitting element LB may each constitute a sub-pixel SP, and the red light-emitting element LR, the green light-emitting element LG, and the blue light-emitting element LB may together constitute a pixel PX. In other words, in this embodiment, the light-emitting element group LS may include a pixel PX, and the closed opening O1 surrounds the pixel PX.
[0075] The width OW1 of the closed opening O1 is at least greater than the width of the crack CK. For example, in some embodiments, since the minimum line width of the laser cutting process is approximately 3 μm, the width OW1 of the closed opening O1 may be 3 μm to 200 μm. In some embodiments, since the depth of the crack CK is approximately 1 μm to 2 μm and the total thickness TA of the adhesive structure AS is approximately 50 μm, the depth DO1 of the closed opening O1 may be 5% to 100% of the total thickness TA of the adhesive structure AS to ensure that the crack CK does not cause positional displacement of the light-emitting device LD.
[0076] Below, use Figures 5 to 11 Continue to describe other embodiments of the present invention, and continue to use Figures 1A to 4D The component numbers and related contents of the embodiments are the same, wherein the same number is used to represent the same or similar components, and the description of the same technical content is omitted. For the description of the omitted parts, please refer to Figures 1A to 4D The embodiments of the present invention will not be repeated in the following description.
[0077] Figure 5FIG2 is a schematic partial top view of a light-emitting element array substrate 20 according to an embodiment of the present invention. The light-emitting element array substrate 20 includes a second carrier C2, a plurality of light-emitting element groups LS, and an adhesive structure AS. The plurality of light-emitting element groups LS are disposed on the second carrier C2, and each of the plurality of light-emitting element groups LS may include a plurality of light-emitting elements LD. The adhesive structure AS is positioned between the plurality of light-emitting element groups LS and the second carrier C2, and has a plurality of enclosed openings O1. The outer contours PO of the plurality of enclosed openings O1 each surround the plurality of light-emitting element groups LS. The plurality of enclosed openings O1 each have an inner sidewall W1, and the minimum spacing G1 between the inner sidewall W1 and the plurality of light-emitting element groups LS is greater than or equal to the minimum spacing G2 between the light-emitting elements LD.
[0078] Figure 5 The light emitting element array substrate 20 shown is similar to the Figures 4C to 4D The main difference between the light-emitting element array substrate 10 shown is that the light-emitting element group LS of the light-emitting element array substrate 20 can include multiple pixels PX, and the closed opening O1 can surround the multiple pixels PX. For example, each light-emitting element group LS can include two pixels PX, three pixels PX, or more pixels PX.
[0079] 6A to 7D 1 is a partial top view and a cross-sectional view of the steps of the manufacturing method of the light emitting element array substrate 30 according to an embodiment of the present invention. It should be noted that, 6A to 7D The process of steps is continued from Figures 1A to 2 After the steps of the process, Figures 1A to 2 The steps of the process can be referred to the above description and will not be repeated here.
[0080] Please refer to Figure 6A , the adhesive layer AL is etched using the photoresist PR as a mask, and then the photoresist PR is removed to form an adhesive structure AS having a plurality of closed openings O2, as shown in FIG. Figure 6B and Figure 6C As shown, Figure 6C For the Figure 6B Schematic cross-sectional view taken along section line C-C'.
[0081] For example, the photoresist PR may have an opening OP2. After the etching process, the portion of the adhesive structure AS corresponding to the opening OP2 may be removed to form a closed opening O2. In some embodiments, the closed opening O2 may have a polygonal outline. For example, Figure 6B As shown, the closed opening O2 may have a quadrilateral outline.
[0082] Please refer to Figure 7A, the plurality of light emitting elements LD are transferred from the first carrier C1 to the second carrier C2, and the plurality of light emitting elements LD are fixed on the adhesive structure AS, as shown in FIG. Figure 7B As shown. For example, a laser lift-off process can be used to separate the light-emitting element LD from the first carrier C1, thereby transferring the light-emitting element LD to a portion of the adhesive structure AS in the closed opening O2, so that a plurality of light-emitting element groups LS consisting of a plurality of light-emitting elements LD can be respectively located in the closed opening O2. In this embodiment, the plurality of light-emitting elements LD in each closed opening O2 can be referred to as a light-emitting element group LS. In some embodiments, the adhesive material AM attached to the light-emitting element LD may be separated from the first carrier C1 along with the light-emitting element LD. Therefore, the light-emitting element LD separated from the first carrier C1 may be covered with the adhesive material AM.
[0083] Then, the adhesive AM on the light emitting element LD can be removed to form Figure 7C and Figure 7D The light emitting element array substrate 30 shown in FIG. Figure 7D For the Figure 7C Schematic cross-sectional view taken along section line D-D'. The adhesive material AM can be removed using a plasma etching process, but the present invention is not limited thereto. Because the adhesive structure AS is made of a material similar to the adhesive material AM, a portion of the adhesive structure AS may be removed during the removal of the adhesive material AM, forming a crack CK in the adhesive structure AS. In this embodiment, by sealing the opening O2 to prevent the crack CK from extending to the adhesive structure AS below the light-emitting element group LS, the position of the light-emitting element LD in the light-emitting element group LS can be prevented from shifting. This prevents the light-emitting element LD from shifting further during the subsequent transfer process, thereby affecting the transfer accuracy of the light-emitting element LD.
[0084] like Figure 7C and Figure 7D As shown, the light-emitting element array substrate 30 includes: a second carrier C2, multiple light-emitting element groups LS, and an adhesive structure AS. The multiple light-emitting element groups LS are disposed on the second carrier C2, and each of the multiple light-emitting element groups LS may include multiple light-emitting elements LD. The adhesive structure AS is located between the multiple light-emitting element groups LS and the second carrier C2, and has multiple closed openings O2. The outer contours PO of the multiple closed openings O2 respectively surround the multiple light-emitting element groups LS. The multiple closed openings O2 each have an inner sidewall W3 facing the enclosed light-emitting element group LS, and the minimum spacing G1 between the inner sidewall W3 and the multiple light-emitting element groups LS is greater than or equal to the minimum spacing G2 between the light-emitting elements LD.
[0085] Since the minimum spacing G2 between the light-emitting elements LD is determined based on the transfer error of the light-emitting elements LD, when the minimum spacing G1 between the inner sidewall W3 and the light-emitting elements LD is less than the minimum spacing G2 between the light-emitting elements LD, the light-emitting elements LD may shift due to the transfer error to partially overhang the closed opening O2, causing the light-emitting elements LD to tilt and fall onto the adhesive structure AS outside the closed opening O2, thereby affecting the accuracy of subsequent transfer. By ensuring that the minimum spacing G1 between the inner sidewall W3 and the multiple light-emitting elements LD is greater than or equal to the minimum spacing G2 between the light-emitting elements LD, the shift of the light-emitting elements LD can be prevented from exceeding the tolerance, thereby ensuring that the light-emitting element array substrate 30 has good alignment accuracy and preventing the subsequent transfer accuracy of the light-emitting elements LD from being affected.
[0086] In this embodiment, the adhesive structure AS includes a first portion P1 and a second portion P2. The first portion P1 is located between the enclosed light-emitting element LD and the second substrate C2, while the second portion P2 surrounds the closed opening O2. The first portion P1 and the second portion P2 are made of the same material. In some embodiments, the spacing G4 between the closed openings O2 can be greater than zero. In other words, a portion of the adhesive structure AS exists between the closed openings O2, rendering the closed openings O2 disconnected and separated from each other.
[0087] In this embodiment, each light-emitting element group LS may include one pixel PX, and the closed opening O2 may surround one pixel PX. In some embodiments, the width OW2 of the closed opening O2 may be approximately 200 μm to 650 μm. In some embodiments, the thickness T1 of the adhesive structure AS in the closed opening O2 is at least 10% of the total thickness TA of the adhesive structure AS to ensure that the light-emitting element LD can be fixed to the second carrier C2 via the adhesive structure AS. In certain embodiments, the depth DO2 of the closed opening O2 may be 5% to 90% of the total thickness TA of the adhesive structure AS. In some embodiments, the distance HU between the surface of the insulating layer EU away from the second carrier C2 and the second carrier C2 is no less than the total thickness TA of the adhesive structure AS to ensure that the first pad PD1 and the second pad PD2 protrude from the upper surface of the adhesive structure AS without affecting the connection of the first pad PD1 and the second pad PD2 to external components in subsequent manufacturing processes.
[0088] Figure 8Figure 4 is a partial top view of a light-emitting element array substrate 40 according to an embodiment of the present invention. The light-emitting element array substrate 40 includes a second carrier C2, multiple light-emitting element groups LS, and an adhesive structure AS. The multiple light-emitting element groups LS are disposed on the second carrier C2, and each of the multiple light-emitting element groups LS may include multiple light-emitting elements LD. The adhesive structure AS is positioned between the multiple light-emitting element groups LS and the second carrier C2. The adhesive structure AS has multiple enclosed openings O2, with outer contours PO of the multiple enclosed openings O2 surrounding the multiple light-emitting element groups LS.
[0089] Figure 8 The light emitting element array substrate 40 shown is similar to the Figures 7C to 7D The main difference between the illustrated light-emitting element array substrate 30 is that the number of light-emitting elements in the light-emitting element groups LS of the light-emitting element array substrate 40 is not identical. For example, in this embodiment, the light-emitting element group LS may include a light-emitting element group LS1 and a light-emitting element group LS2, and the number of light-emitting elements in the light-emitting element group LS1 is different from the number of light-emitting elements in the light-emitting element group LS2. For example, the light-emitting element group LS1 may include one pixel PX, the light-emitting element group LS2 may include two pixels PX, and each pixel PX may include three light-emitting elements LD.
[0090] In some embodiments, because the number of cracks CK located in the peripheral area AP of the second carrier C2 is greater than the number of cracks CK located in the central area AC, the light-emitting element group LS2 can be designed to be located in the central area AC of the second carrier C2, while the light-emitting element group LS1 can be located in the peripheral area AP of the second carrier C2. In other words, the number of light-emitting elements enclosed by the outer contour PO of the closed opening O2 located in the central area AC of the second carrier C2 can be greater than the number of light-emitting elements enclosed by the outer contour PO of the closed opening O2 located in the peripheral area AP of the second carrier C2, thereby reducing laser cutting time.
[0091] 9A to 10D 1 is a partial top view and a cross-sectional view of the steps of the manufacturing method of the light emitting element array substrate 50 according to an embodiment of the present invention. It should be noted that, 9A to 10D The process of steps is continued from Figures 1A to 2 After the steps of the process, Figures 1A to 2 The steps of the process can be referred to the above description and will not be repeated here.
[0092] Please refer to Figure 9A , a protective layer PL is formed on the adhesive layer AL. Figure 9B , the protective layer PL is etched using the photoresist PR as a mask, and then the photoresist PR is removed to form a protective layer PL having a plurality of closed openings O3, such as Figure 9C and Figure 9D As shown, Figure 9D For the Figure 9C Schematic cross-section taken along section line EE'. For example, the photoresist PR may have an opening OP3. After an etching process, the portion of the protective layer PL corresponding to the opening OP3 may be removed, thereby forming a closed opening O3. The closed opening O3 may expose a portion of the adhesive layer AL. In this embodiment, the adhesive layer AL and the protective layer PL having the closed opening O3 may be considered an adhesive structure AS. That is, the adhesive structure AS may include the adhesive layer AL and the protective layer PL having the closed opening O3. The protective layer PL may be used to protect the adhesive layer AL.
[0093] Please refer to Figure 10A , the light emitting element LD is transferred from the first carrier C1 to the second carrier C2, and the light emitting element LD is fixed on the portion of the adhesive layer AL exposed by the closed opening O3, as shown in FIG. Figure 10B As shown. In this embodiment, the multiple light-emitting elements LD in each closed opening O3 can be referred to as a light-emitting element group LS, and each light-emitting element group LS can be located in a closed opening O3. In some embodiments, the adhesive material AM attached to the light-emitting elements LD can be detached from the first carrier C1 along with the light-emitting elements LD. Therefore, the light-emitting elements LD detached from the first carrier C1 can be covered with the adhesive material AM.
[0094] Then, the adhesive AM on the light emitting element LD can be removed to form Figure 10C and Figure 10D The light emitting element array substrate 50 shown in FIG. Figure 10D For the Figure 10C Schematic cross-section taken along section line F-F'. The adhesive material AM can be removed using a plasma etching process, but the present invention is not limited thereto. In this embodiment, since the protective layer PL covers the adhesive layer AL, it protects the adhesive layer AL during the removal of the adhesive material AM, thereby preventing cracks in the adhesive layer AL and, consequently, preventing the position of the light-emitting elements LD in the light-emitting element group LS from shifting.
[0095] like Figure 10C and Figure 10DAs shown, the light-emitting element array substrate 50 includes: a second carrier C2, multiple light-emitting element groups LS, and an adhesive structure AS. The multiple light-emitting element groups LS are disposed on the second carrier C2, and each of the multiple light-emitting element groups LS may include multiple light-emitting elements LD. The adhesive structure AS is located between the multiple light-emitting element groups LS and the second carrier C2, and has multiple closed openings O3. The outer contours PO of the multiple closed openings O3 respectively surround the multiple light-emitting element groups LS. The multiple closed openings O3 each have an inner sidewall W4, and the minimum spacing G1 between the inner sidewall W4 and the multiple light-emitting element groups LS is greater than or equal to the minimum spacing G2 between the light-emitting elements LD.
[0096] Since the minimum spacing G2 between the light-emitting elements LD is determined based on the transfer error of the light-emitting elements LD, when the minimum spacing G1 between the inner sidewall W4 and the light-emitting elements LD is less than the minimum spacing G2 between the light-emitting elements LD, the light-emitting elements LD may shift due to the transfer error to partially overhang the closed opening O3, causing the light-emitting elements LD to tilt and fall onto the protective layer PL outside the closed opening O3, thereby affecting the accuracy of subsequent transfer. By ensuring that the minimum spacing G1 between the inner sidewall W4 and the multiple light-emitting elements LD is greater than or equal to the minimum spacing G2 between the light-emitting elements LD, the shift of the light-emitting elements LD can be prevented from exceeding the tolerance, thereby ensuring that the light-emitting element array substrate 50 has good alignment accuracy and preventing the subsequent transfer accuracy of the light-emitting elements LD from being affected.
[0097] In this embodiment, the inner sidewall W4 may face the enclosed plurality of light-emitting elements LD. The adhesive structure AS may include an adhesive layer AL and a protective layer PL. The adhesive layer AL is positioned between the enclosed light-emitting element group LS and the second carrier C2. The protective layer PL surrounds and seals the opening O3. The adhesive layer AL and the protective layer PL are made of different materials. In some embodiments, the adhesive layer AL may include an organic material, such as an acrylic resin, and the protective layer PL may include an inorganic material, such as a metal or silicon dioxide.
[0098] In this embodiment, each light-emitting element group LS may include one pixel PX, and the closed opening O3 may surround one pixel PX. In some embodiments, the width OW3 of the closed opening O3 may be 200 μm to 650 μm. In some embodiments, the distance HU between the surface of the insulating layer EU away from the second carrier C2 and the second carrier C2 is no less than the total thickness TA of the adhesive structure AS. This ensures that the first pad PD1 and the second pad PD2 protrude above the upper surface of the protective layer AL, enabling smooth connection with external components during subsequent manufacturing processes.
[0099] Figure 11Figure 6 is a partial top view of a light-emitting element array substrate 60 according to an embodiment of the present invention. The light-emitting element array substrate 60 includes a second carrier C2, multiple light-emitting element groups LS, and an adhesive structure AS. The multiple light-emitting element groups LS are disposed on the second carrier C2, and each of the multiple light-emitting element groups LS may include multiple light-emitting elements LD. The adhesive structure AS is positioned between the multiple light-emitting element groups LS and the second carrier C2. The adhesive structure AS has multiple enclosed openings O4, with outer contours PO of the multiple enclosed openings O4 surrounding the multiple light-emitting element groups LS.
[0100] Figure 11 The light emitting element array substrate 60 shown is similar to the FIG. 10C to FIG. 10D The main differences of the light emitting element array substrate 50 shown are that the shape of the closed opening O4 is different from the shape of the closed opening O3 , and the number of light emitting elements in the light emitting element group LS of the light emitting element array substrate 60 is not completely the same.
[0101] For example, in this embodiment, the closed opening O4 may have an L-shaped profile. Furthermore, the light-emitting element group LS may include, for example, a light-emitting element group LS3 and a light-emitting element group LS4, with the number of light-emitting elements in the light-emitting element group LS3 being different from the number of light-emitting elements in the light-emitting element group LS4. For example, the light-emitting element group LS3 may include one pixel PX, and the light-emitting element group LS4 may include three pixels PX, with each pixel PX including three light-emitting elements LD. In some embodiments, the arrangement of the light-emitting elements LD in each pixel PX within the closed opening O4 may differ from the arrangement of the light-emitting elements LD in each pixel PX within the aforementioned closed openings O1, O2, and O3. For example, the light-emitting elements LR, LG, and LB of the pixel PX within the closed opening O1 may be arranged in the same direction, while the light-emitting elements LR and LG of the pixel PX within the closed opening O4 may be arranged in a first direction D1, and the light-emitting elements LG and LB may be arranged in a second direction D2. The first direction D1 may intersect with the second direction D2, such that the pixel PX within the closed opening O4 also has an L-shaped profile.
[0102] In some embodiments, the light-emitting element group LS4 can be designed to be located in the central area AC of the second carrier C2, and the light-emitting element group LS3 can be designed to be located in the peripheral area AP of the second carrier C2, so that the number of light-emitting elements surrounded by the outer contour PO of the closed opening O4 located in the central area AC of the second carrier C2 is greater than the number of light-emitting elements surrounded by the outer contour PO of the closed opening O4 located in the peripheral area AP of the second carrier C2.
[0103] 12A to 12D FIG. 1 is a partial cross-sectional view of a method for manufacturing a light emitting element array substrate 70 according to an embodiment of the present invention. It should be noted that: 12A to 12D The process of steps is continued from Figures 1A to 2 After the steps of the process, Figures 1A to 2 The steps of the process can be referred to the above description and will not be repeated here.
[0104] Please refer to FIG. 12A to FIG. 12B , the multiple light emitting elements LD fixed on the first carrier C1 by the adhesive material AM are transferred to the adhesive layer AL on the second carrier C2, so that the multiple light emitting elements LD are fixed on the second carrier C2 through the adhesive layer AL, and the light emitting elements LD are covered with the adhesive material AM.
[0105] Next, please refer to Figure 12C A plurality of closed openings O5 are formed in the adhesive layer AL, and the closed openings O5 surround the light-emitting element group LS composed of the plurality of light-emitting elements LD. In this embodiment, the adhesive structure AS may include the adhesive layer AL having the closed openings O5. The width OW5 of the closed openings O5 may be approximately 30 μm, and the depth DO5 of the closed openings O5 may be approximately 20 μm. The total thickness TA of the adhesive structure AS may be approximately 70 μm.
[0106] Next, please refer to Figure 12D The adhesive material AM on the light-emitting device LD is removed to expose the first pad PD1 and the second pad PD2 of the light-emitting device LD. During the adhesive material AM removal process, a crack CK is formed in the adhesive structure AS. The closed opening O5 prevents the crack CK from extending to the adhesive structure AS or the adhesive layer AL below the light-emitting device LD. This prevents the position of the light-emitting device LD from shifting, thereby ensuring that the alignment accuracy of the light-emitting device LD in the light-emitting device array substrate 70 remains within an acceptable error range.
[0107] In summary, the light-emitting element array substrate of the present invention prevents cracks generated in the adhesive structure during the plasma etching process from extending beneath the light-emitting elements by providing a closed opening. This prevents the position of the light-emitting elements from shifting, thereby ensuring that the light-emitting element array substrate has good alignment accuracy. Furthermore, the manufacturing method of the light-emitting element array substrate of the present invention forms a closed opening in the adhesive structure, and ensures that the minimum spacing between the inner sidewall of the closed opening and the light-emitting elements is greater than or equal to the minimum spacing between the light-emitting elements. This prevents the light-emitting elements from shifting beyond the tolerance, thereby preventing the subsequent transfer accuracy of the light-emitting elements from being affected.
[0108] Although the present invention is disclosed in conjunction with the above embodiments, they are not intended to limit the present invention. Any ordinary technician in the technical field may make slight changes and modifications without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the present invention shall be based on the definition of the attached claims.
Claims
1. A light emitting element array substrate, comprising: carrier board; A plurality of light-emitting element groups are disposed on the carrier, and each of the plurality of light-emitting element groups includes a plurality of light-emitting elements; as well as The adhesive structure is located between the plurality of light emitting element groups and the carrier board and has a plurality of closed openings. The outer contours of the multiple closed openings respectively surround the multiple light-emitting element groups, and the multiple closed openings respectively have a first inner sidewall, and the minimum distance between the first inner sidewall and the multiple light-emitting element groups is greater than or equal to the minimum distance between the multiple light-emitting elements. 2 . The light emitting element array substrate according to claim 1 , wherein a spacing between the plurality of closed openings is greater than zero and smaller than a minimum spacing between the plurality of light emitting element groups. 3 . The light emitting element array substrate according to claim 1 , wherein the number of light emitting elements in the plurality of light emitting element groups is not completely the same. 4 . The light-emitting element array substrate according to claim 1 , wherein each of the plurality of light-emitting element groups comprises at least one pixel, and each pixel comprises at least three light-emitting elements. 5 . The light emitting element array substrate according to claim 1 , wherein the number of light emitting elements in the light emitting element group located in the central area of the carrier is greater than the number of light emitting elements in the light emitting element group located in the peripheral area of the carrier. 6 . The light emitting element array substrate according to claim 1 , further comprising a plurality of adhesives respectively covering the plurality of light emitting elements. 7 . The light emitting element array substrate according to claim 1 , wherein the plurality of closed openings have an annular polygonal outline, and the plurality of closed openings respectively surround the plurality of light emitting element groups.
8. The light-emitting element array substrate as described in claim 7, wherein the closed opening further has a second inner side wall, the second inner side wall faces the surrounded light-emitting element group, the first inner side wall faces away from the surrounded light-emitting element group, and the first inner side wall is opposite to the second inner side wall. 9 . The light emitting element array substrate according to claim 7 , wherein a depth of the closed opening is 5% to 100% of a thickness of the adhesive structure. 10 . The light emitting element array substrate according to claim 1 , wherein the plurality of closed openings each have a polygonal outline, and the plurality of light emitting element groups are respectively disposed in the plurality of closed openings. 11 . The light emitting element array substrate according to claim 10 , wherein a depth of the closed opening is 5% to 90% of a thickness of the adhesive structure.
12. A light-emitting element array substrate as described in claim 10, wherein the light-emitting element includes a semiconductor stack, a first pad, a second pad and an insulating layer, the first pad and the second pad are respectively electrically connected to different sublayers in the semiconductor stack, the insulating layer is located between part of the first pad and part of the second pad and the semiconductor stack, and the distance between the surface of the insulating layer away from the carrier and the carrier is not less than the total thickness of the adhesive structure.
13. The light-emitting element array substrate as described in claim 10, wherein the adhesive structure includes a first portion and a second portion, the first portion is located between the multiple light-emitting element groups and the carrier, the second portion surrounds the closed opening, and the first portion and the second portion are made of the same material.
14. The light-emitting element array substrate as described in claim 10, wherein the adhesive structure includes a first portion and a second portion, the first portion is located between the plurality of light-emitting element groups and the carrier, the second portion surrounds the closed opening, and the first portion and the second portion are made of different materials.
15. A method for manufacturing a light emitting element array substrate, comprising: Providing a first carrier board, wherein a plurality of light-emitting element groups are disposed on the first carrier board, and each of the plurality of light-emitting element groups includes a plurality of light-emitting elements; Providing a second carrier board, wherein the second carrier board is provided with an adhesive structure; forming a plurality of closed openings in the adhesive structure; as well as The plurality of light-emitting element groups are transferred from the first carrier to the second carrier, and the plurality of light-emitting element groups are respectively fixed to the adhesive structures respectively surrounded by outer contours of the plurality of closed openings. 16 . The method for manufacturing a light emitting element array substrate according to claim 15 , wherein when the closed opening is an annular polygon, the plurality of light emitting elements are transferred to the adhesive structure surrounded by the closed opening. 17 . The method for manufacturing a light emitting element array substrate according to claim 15 , wherein when the closed opening is a polygon, the plurality of light emitting elements are transferred into the closed opening.
18. The method for manufacturing a light-emitting element array substrate as claimed in claim 15, wherein when the closed openings are annular polygons, forming the plurality of closed openings in the adhesive structure is performed before or after transferring the plurality of light-emitting elements from the first carrier to the second carrier. 19 . The method for manufacturing a light emitting element array substrate according to claim 15 , wherein the plurality of light emitting elements are fixed to the first carrier by an adhesive. 20 . The method for manufacturing a light emitting element array substrate according to claim 19 , further comprising removing the adhesive material after transferring the plurality of light emitting elements from the first carrier to the second carrier.
Citation Information
Patent Citations
Light-emitting device and manufacturing method thereof
CN110491987A
Light emitting diode device and display using the same
TW201436295A