A radio device

Abstract

The embodiment of the present application discloses a radio device. The radio device comprises an antenna structure, a circuit structure and a functional stack structure; the functional stack structure comprises 1st to Nth functional layers and a medium layer between the functional layers stacked along a first direction, N is a positive integer and N>=2; the functional stack structure comprises at least one first functional hole, the first functional hole at least penetrates the 1st functional layer, and the first functional hole is filled with a first connecting part; the antenna structure and the circuit structure are electrically connected through the first functional hole. In the embodiment of the present application, the functional stack structure is composed of multiple functional layers stacked, the antenna structure and the circuit structure are electrically connected through the first functional hole, the product miniaturization can be realized, the multi-chip cascade and more transceiving antenna channels can be realized in a small size range, the product is more integrated and high reliability, and the mass production with low cost is facilitated.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of radar, and in particular to a radio device. BACKGROUND

[0002] Compared with the traditional 3D (distance, speed, horizontal angle) millimeter wave radar, the automobile 4D millimeter wave radar increases the pitch angle to measure the height information, which can make the target imaging information more multi-dimensional and accurate, and increase the active safety of intelligent driving.

[0003] With the development of waveguide antenna structure in the field of automobile millimeter wave radar, more 3D waveguide antenna schemes are currently applied to the research and development of 4D millimeter wave radar products. The 4D millimeter wave radar product based on the 3D waveguide antenna scheme has lower transmission loss and higher antenna gain.

[0004] However, the 3D waveguide antenna structure and the chip PCB need to be connected through a microstrip-to-waveguide structure in the 4D millimeter wave radar, which causes the existing 4D millimeter wave radar to fail to meet the miniaturization requirement. SUMMARY

[0005] The present application provides a radio device to realize the miniaturization of the 4D millimeter wave radar product.

[0006] According to an aspect of the present application, a radio device is provided, which comprises an antenna structure, a circuit structure and a functional stack structure.

[0007] The functional stack structure comprises a first functional layer to an Nth functional layer stacked along a first direction and a medium layer between the functional layers, N is a positive integer and N≥2.

[0008] The functional stack structure comprises at least one first functional hole, the first functional hole at least penetrates the first functional layer, and the first functional hole is filled with a first connecting part.

[0009] The antenna structure and the circuit structure are electrically connected through the first functional hole.

[0010] Optionally, the functional layer comprises a second connecting part, and the second connecting part is used for electrically connecting two first functional holes.

[0011] Optionally, the antenna structure and the circuit structure are located on the same side of the functional stack structure.

[0012] The antenna structure and the circuit structure are electrically connected through at least two first functional holes, and the at least two first functional holes penetrate the same functional layer.

[0013] Optionally, the antenna structure and the circuit structure are located on opposite sides of the functional stack structure.

[0014] The antenna structure and the circuit structure are electrically connected through at least one first functional hole, the at least one first functional hole penetrating through the first functional layer to the Nth functional layer.

[0015] Optionally, the functional stack structure comprises an edge dielectric layer and an intermediate dielectric layer, the edge dielectric layer being in contact with the first functional layer or the Nth functional layer, and the intermediate dielectric layer not being in contact with the first functional layer and not being in contact with the Nth functional layer.

[0016] The dielectric loss constant of the edge dielectric layer is lower than the dielectric loss constant of the intermediate dielectric layer.

[0017] Optionally, the functional stack structure comprises a first dummy hole, the first dummy hole penetrating through at least the Nth functional layer.

[0018] The vertical projection of the first dummy hole on the first functional layer overlaps the first functional hole.

[0019] Optionally, the overlapping first dummy hole and the first functional hole are connected and penetrate through the first functional layer to the Nth functional layer; or,

[0020] The overlapping first dummy hole and the first functional hole are separated by at least one dielectric layer.

[0021] Optionally, in the first direction, the vertical projection of the first dummy hole on the first functional layer covers the first functional hole.

[0022] Optionally, the functional stack structure comprises at least one second functional hole, the second functional hole penetrating through the first functional layer to the Nth functional layer, and the second functional hole being grounded.

[0023] Optionally, in the second direction, the distance between adjacent functional holes is d1, and the second direction is perpendicular to the first direction.

[0024] The aperture of the functional hole is d2.

[0025] d1 is greater than d2.

[0026] Optionally, the antenna structure is a microstrip antenna structure.

[0027] Optionally, the radio device comprises a millimeter wave radar.

[0028] The embodiment of the present application discloses a radio device, comprising: an antenna structure, a circuit structure and a functional stack structure; the functional stack structure comprises a first functional layer to an Nth functional layer stacked along a first direction and a medium layer between the functional layers, N is a positive integer and N is greater than or equal to 2; the functional stack structure comprises at least one first functional hole, the first functional hole at least penetrates the first functional layer, and the first functional hole is filled with a first connecting part; the antenna structure and the circuit structure are electrically connected through the first functional hole. The multi-layer functional layer and the medium layer construct the functional stack structure, the vertical interconnection of signals is realized in the functional stack structure through a via hole process design, product miniaturization is realized, multi-chip cascading and more transceiving antenna channels are realized in a small size range, and products such as 4D millimeter wave radars are manufactured based on the scheme, so that the high resolution and miniaturization requirements of the products can be met, the products are more integrated and high in reliability, and mass production at low cost is facilitated.

[0029] It should be understood that the content described in this part is not intended to identify key or important features of the embodiments of the present application, nor is it used to limit the scope of the present application. Other features of the present application will become apparent from the following description. BRIEF DESCRIPTION OF DRAWINGS

[0030] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed in the embodiment description will be briefly introduced below. Obviously, the drawings in the following description are only some embodiments of the present application, and other drawings can be obtained by those skilled in the art without creative labor.

[0031] Figure 1 is a schematic diagram of a radio device provided by the embodiment of the present application;

[0032] Figure 2 is a schematic diagram of a functional stack structure provided by the embodiment of the present application;

[0033] Figure 3 is a schematic diagram of another functional stack structure provided by the embodiment of the present application;

[0034] Figure 4 is a schematic diagram of another functional stack structure provided by the embodiment of the present application;

[0035] Figure 5 is a schematic diagram of another functional stack structure provided by the embodiment of the present application;

[0036] Figure 6 is a structure transmission coefficient diagram of a miniaturized 4D imaging radar vertical interconnection design provided by the embodiment of the present application;

[0037] Figure 7This is a reflection coefficient diagram of a vertical interconnect antenna provided in an embodiment of the present invention;

[0038] Figure 8 This is a vertical interconnect antenna pattern provided in an embodiment of the present invention. Detailed Implementation

[0039] To enable those skilled in the art to better understand the present invention, the technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings of the embodiments of the present invention. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort should fall within the scope of protection of the present invention.

[0040] It should be noted that the terms "first," "second," etc., in the specification, claims, and accompanying drawings of this invention are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that such data can be interchanged where appropriate so that the embodiments of the invention described herein can be implemented in orders other than those illustrated or described herein. Furthermore, the terms "comprising" and "having," and any variations thereof, are intended to cover a non-exclusive inclusion; for example, a process, method, system, product, or apparatus that comprises a series of steps or units is not necessarily limited to those steps or units explicitly listed, but may include other steps or units not explicitly listed or inherent to such processes, methods, products, or apparatus.

[0041] Figure 1 This is a schematic diagram of a wireless device provided in an embodiment of the present invention, as shown below. Figure 1 As shown, the wireless device includes: an antenna structure 11, a circuit structure 12, and a functional stack structure 13; the functional stack structure 11 includes a first to an Nth functional layer 131 stacked along a first direction S1 and a dielectric layer 132 between the functional layers, where N is a positive integer and N≥2; the functional stack structure 13 includes at least one first functional hole 133, the first functional hole 133 at least penetrates the first functional layer 131a, and the first functional hole 133 is filled with a first connection portion 134; the antenna structure 11 and the circuit structure 12 are electrically connected through the first functional hole 133. Figure 1 The second direction S2 is perpendicular to the first direction S1, and the second direction S2 is parallel to the plane where the functional layer is located.

[0042] Specifically, antenna structure 11 can be understood as an antenna in a device that enables signal interconnection, and antenna structure 11 can be an antenna in a 4D imaging radar. Circuit structure 12 can be understood as a chip integrating metal wires and electrical and electronic components, and the chip can be a monolithic microwave integrated circuit, etc.

[0043] The functional stack structure 13 can be understood as a structure formed by stacking multiple functional layers 131.

[0044] The functional layer 131 can be understood as a metal layer assisting the operation of the antenna structure 11, and the functional layer 131 is also used for transmitting signals between the antenna structure 11 and the circuit structure 12, and under the driving of the circuit structure 12, the antenna structure 11 is operated. The optional functional layer 131 includes a feeding structure, a metal line, and a pad structure, etc. The isolation pad with different diameters can be designed in the functional layer 131, and in combination with different medium materials, the parasitic parameter effects such as inductance and capacitance of each functional hole can be tuned and optimized.

[0045] There is a medium layer 132 between adjacent functional layers 131, and the medium layer 132 can be an insulating layer. The medium layers 132 in the functional stack structure 13 can be different or the same plate structures, and the plate can be a low-loss high-frequency plate. The medium layer 132 insulates and separates the functional layers 131.

[0046] The functional stack structure 13 also includes multiple first functional holes 133. The first functional hole 133 is a via hole penetrating one functional layer or multiple functional layers in the functional stack structure 13, and the first connecting part 134 can be understood as a material filled in the first functional hole 133 and capable of conducting electricity. The first functional hole 133 connects two functional structures and transmits signals between the two functional structures. For example, the first functional hole 133 connects the antenna structure 11 and the circuit structure 12, and the first functional hole 133 also connects the functional layer 131, so that the first functional hole 133 transmits signals between the antenna structure 11 and the circuit structure 12 through the functional layer 131.

[0047] Specifically, the functional stack structure 13 formed by stacking multiple functional layers 131 and multiple medium layers 132 is manufactured by using a multi-layer stacking process, such as pattern etching, drilling, and press forming. A medium layer 132 is arranged between two adjacent functional layers 131 to prevent signal mis-transmission between different functional layers 131. The first functional hole 133 is arranged on the functional stack structure 13, and the first connecting part 134 is filled in the first functional hole 133.

[0048] The antenna structure 11 and the circuit structure 13 can be vertically connected through the functional stack structure 13, and the product miniaturization and high integration can be realized.

[0049] For example, Figure 1As shown, the functional stack structure 13 includes first functional layer 131a to Nth functional layer 131b stacked along the S1 direction, a total of 8 functional layers 131, and a medium layer 132 arranged between adjacent two functional layers 131, a total of 7 medium layers 132. The optional medium layer 132 can be composed of any PCB board material prepreg, copper clad plate according to design requirements. Among them, the board material of the medium layer 132 can be a low-loss high-frequency copper clad plate material or a board material with strong electrical conductivity, such as a low-dk, df low-loss high-frequency copper clad plate material, for example, a RO3003 copper clad plate or the like. The first medium layer or the Nth medium layer 132 uses a low-dk, df low-loss high-frequency copper clad plate material, such as a RO3003 copper clad plate or the like, to ensure low dielectric loss of radio frequency circuit signal transmission; other medium layers 132 use high-speed board materials or ordinary FR4 grade board materials according to design requirements to ensure the transmission requirements of the digital circuit part. The adjacent functional layers 131 of the functional stack structure 13 do not transmit through signal lines, so the third medium layer uses a high-thickness medium layer to isolate the radio frequency and digital circuit signals. The functional stack structure 13 uses a middle symmetrical layer stack structure to improve the warping problem of the PCB plate making process.

[0050] The functional stack structure 13 further includes at least one first functional hole 133, respectively a first functional hole 133a and a first functional hole 133b. The hole diameter of the functional hole 133 is greater than 0.2mm. The first functional hole 133 at least penetrates the first functional layer 131a. The first functional hole 133 penetrates the first functional layer 131a through the PCB through-hole process. As shown, Figure 1 The first functional hole 133a penetrates the first functional layer 131a, the second functional layer, and the third functional layer 131c. The first functional hole 133 is filled with a first connecting part 134. The antenna structure 11 and the circuit structure 13 are connected to the two first functional holes 133. In actual application, even if the antenna structure 11 and the circuit structure 13 are not in the same layer, signal transmission can be realized through the functional stack structure 13.

[0051] Through the above method, vertical interconnection of the antenna structure and the circuit structure through the functional stack structure is realized, product miniaturization is realized, multi-chip cascading and more transceiver antenna channels can be realized in a small size range, the demand for miniaturization and high resolution is met, and the miniaturization and high resolution of the 4D millimeter wave radar product are realized.

[0052] Optionally, the functional layer 131 includes a second connecting part 135. The second connecting part 135 is used for electrically connecting the two first functional holes 133. Specifically, the second connecting part 135 can be understood as a metal line formed in the functional layer 131. The metal line is used for connecting the two functional holes and transmitting signals between the two holes.

[0053] For example, Figure 1As shown in the figure, when the antenna structure 11 and the circuit structure 12 are located on the same side of the first functional layer 131a, the antenna structure 11 is connected to the second connecting part 135 arranged in the functional layer 131 through the first functional hole 133a, and the second connecting part 135 is connected to the circuit structure 12 on the first functional layer 131 through the first functional hole 131b, so as to realize the transmission of signals in the vertical direction of the first direction S1. The signals generated by the antenna structure 11 are transmitted to the second connecting part 135 of the third functional layer 131 through the first functional hole 133a on the first functional layer 131a, and then transmitted to the circuit structure 12 connected to the first functional hole 133b of the first functional layer 131a, so as to realize the vertical interconnection of signals in the single-board medium plate.

[0054] Optionally, the antenna structure 11 and the circuit structure 12 are located on the same side of the functional stack structure 13; the antenna structure 11 and the circuit structure 12 are electrically connected through at least two first functional holes 133, and the at least two first functional holes 133 penetrate the same functional layer 131.

[0055] Specifically, when the antenna structure 11 and the circuit structure 12 are located on the same side of the functional stack structure 13, the antenna structure 11 and the circuit structure 12 are respectively electrically connected to two first functional holes 133, and the two first functional holes 133 penetrate the same functional layer 131; the antenna structure 11 and the circuit structure 12 realize the vertical interconnection of signals through the functional hole 133 and the second connecting part 135.

[0056] For example, as shown in the figure, Figure 1 As shown in the figure, when the antenna structure 11 and the circuit structure 12 are located on the same side of the functional stack structure 13, i.e., on the first functional layer 131a, the circuit structure 12 is connected to the functional hole 133b, the antenna structure 11 is connected to the functional hole 133a, and the functional hole 133b is connected to the functional hole 133a through the second connecting part 135. Therefore, the first functional hole 131a and the first functional hole 131b penetrate the same functional layer 131, so as to facilitate the design of the second connecting part 135 connecting the two functional holes 133b and 133a in the functional layer. Taking the circuit structure 12 driving the antenna structure 11 as an example, the signals generated by the circuit structure 12 are transmitted to the antenna structure 11 through the first functional hole 133b, the second connecting part 135 and the first functional hole 133a, and the transmission of signals is carried out in the same functional layer, so as to realize the vertical interconnection of signals.

[0057] Optionally, the antenna structure 11 and the circuit structure 12 are located on opposite sides of the functional stack structure 13; the antenna structure 11 and the circuit structure 12 are electrically connected through at least one first functional hole 133, and the at least one first functional hole 133 penetrates the first to Nth functional layers 131.

[0058] Specifically, when the antenna structure 11 and the circuit structure 12 are located on opposite sides of the functional stack structure 13, the first functional hole 133 can pass through the first functional layer 131 to the Nth functional layer 131, and the antenna structure 11 and the circuit structure 12 are electrically connected through the at least one first functional hole 133. Based on this, the signals between the antenna structure 11 and the circuit structure 12 are directly transmitted through the first functional hole 133.

[0059] Exemplarily, Figure 2 is a schematic diagram of a functional stack structure provided by an embodiment of the present application. As shown in Figure 2 , the antenna structure 11 and the circuit structure 12 are located on opposite sides of the functional stack structure 13, that is, the antenna structure 11 is located on the first functional layer 131a, and the circuit structure 12 is located on the Nth functional layer 131b. At this time, when the antenna structure 11 and the circuit structure 12 transmit signals, the signals between the two are transmitted through the functional hole 133 passing through the first functional layer to the Nth functional layer, realizing the vertical interconnection of the antenna structure 11 and the circuit structure 12.

[0060] Optionally, the functional stack structure 13 includes an edge dielectric layer 132a and an intermediate dielectric layer 132b, the edge dielectric layer 132a is in contact with the first functional layer 131a or the Nth functional layer 131b, and the intermediate dielectric layer 132b is not in contact with the first functional layer 131a and is not in contact with the Nth functional layer 131b; the dielectric loss constant of the edge dielectric layer 132a is lower than that of the intermediate dielectric layer 132b.

[0061] Specifically, when the dielectric loss constant of the edge dielectric layer 132a is lower than that of the intermediate dielectric layer 132b, the processability of the structure can be improved and low loss of energy transmission can be realized.

[0062] Exemplarily, as shown in Figure 2As shown, the first dielectric layer 132c is in contact with the first functional layer 131a, and thus the first dielectric layer 132c is an edge dielectric layer. The Nth dielectric layer 132d is in contact with the Nth functional layer 131b, and thus the Nth dielectric layer 132d is another edge dielectric layer. At least one of the first dielectric layer 132c and the Nth dielectric layer 132d is a low-loss high-frequency copper-clad plate material RO3003 with low dk (dielectric constant) and df (dielectric loss factor), where dk = 3.1, df = 0.0018, and the thickness h is 0.127 mm, to ensure low dielectric loss of the radio frequency circuit signal transmission. In the embodiment, the second dielectric layer 132e can also be a prepreg without metal layers on both sides, where dk = 3.5, df = 0.01, and h2 = 0.127 mm; the third dielectric layer 132f uses a high-thickness copper-clad plate material, where dk = 3.55, df = 0.02, and the thickness h3 = 0.268 mm; and the other dielectric layers 132b use a high-speed plate material or a common FR4 copper-clad plate, and maintain a symmetrical structure with the first to third dielectric layers. The thickness of the dielectric layer located at the center of the optional functional stack structure is the largest, and the other film layers in the functional stack structure are symmetrically distributed about the center surface as the axis surface.

[0063] The other dielectric layers 132 in the functional stack structure 13 are intermediate dielectric layers 132b, which are not in contact with the first functional layer 131a and the Nth functional layer 131b. The intermediate dielectric layers can use a high-speed plate material or a common FR4 grade plate material according to actual needs, to ensure the transmission requirements of the digital circuit part.

[0064] Optionally, the functional stack structure 13 includes a first dummy hole 140, which penetrates at least the Nth functional layer 131b; and a vertical projection of the first dummy hole 140 on the first functional layer 131a overlaps the first functional hole 133.

[0065] The first dummy hole 140 can be understood as a ground via, which is an important method for controlling signal transmission interference.

[0066] Specifically, the functional stack structure 13 includes the first dummy hole 140, which penetrates the Nth functional layer 131b, i.e., the first dummy hole 140 is arranged opposite to the first functional hole 133. Through this arrangement, when a signal is transmitted in the first functional hole 133, the electromagnetic radiation generated by the first functional hole 133 can be eliminated through the first dummy hole 140.

[0067] Exemplarily, Figure 3 is a schematic view of another functional stack structure provided by the embodiment of the present application, as Figure 3As shown, the functional stack structure 13 includes a first dummy hole 140, and the horizontal distance d between the first dummy hole 140 and the first functional hole 133 is less than 0.563 mm, and the vertical projection of the first dummy hole 140 in the first functional layer 131a is a vertical projection 14, which can be seen in the figure that the vertical projection 14 overlaps the first functional hole 133, i.e., the first dummy hole 140 is arranged opposite to the first functional hole, which is conducive to eliminating the electromagnetic radiation generated by the first functional hole 133 through the dummy hole.

[0068] Further, the first dummy hole 140 and the first functional hole 133 are connected and pass through the first to N functional layers 131; or, the first dummy hole 140 and the first functional hole 133 are spaced apart by at least one dielectric layer.

[0069] Specifically, the first dummy hole 140 is not only conducive to eliminating the electromagnetic radiation and interference in the first functional hole 133, but also conducive to eliminating static electricity and interference in the functional layer 131.

[0070] Exemplarily, Figure 4 is a schematic view of another functional stack structure provided by an embodiment of the present application, which is described in combination with Figure 3 and Figure 4 , Figure 4 the first dummy hole 140 and the first functional hole 133 in the first functional layer 131a are connected and pass through the first to N functional layers 131, Figure 3 the first dummy hole 140 and the first functional hole 133 in the first functional layer 131a are spaced apart by two dielectric layers 132.

[0071] Optionally, in the first direction, the vertical projection 14 of the first dummy hole 140 in the first functional layer 131 covers the first functional hole 133.

[0072] Specifically, the aperture of the first dummy hole 140 is larger than the aperture of the first functional hole 133.

[0073] Exemplarily, as Figure 3 shown, in the first direction S1, the vertical projection of the first dummy hole 140 in the first functional layer 131a is a vertical projection 14, and the vertical projection 14 covers the first functional hole 133. It is illustrated that the aperture of the first dummy hole 140 is larger than the aperture of the first functional hole 133, which can further eliminate the electromagnetic radiation and interference generated by the first functional hole 133 in the signal transmission process.

[0074] Optionally, the functional stack structure includes at least one second functional hole 15, the second functional hole 15 passes through the first to N functional layers 131, and the second functional hole 15 is grounded.

[0075] Exemplarily, Figure 5 is a schematic view of another functional stack structure provided by an embodiment of the present application, asFigure 5 As shown, the second functional hole 15 penetrates the first to Nth functional layers along the first direction S1, so as to eliminate electromagnetic radiation generated by the antenna structure 11 or the circuit structure 12.

[0076] Optionally, along the second direction, the distance between adjacent functional holes is d1, the second direction S2 is perpendicular to the first direction S2; the aperture of the functional hole is d2; d1 is greater than d2.

[0077] For example, as shown in the figure, Figure 1 As shown, the first direction S1 is a vertically downward direction, the second direction S2 is perpendicular to the first direction S1, the distance between the adjacent two first functional holes 133 along the second direction S2 is d1, 0.2mm < d1 < 0.4mm, the aperture of the functional hole is d2, d2 > 0.2mm, that is, the distance between the adjacent two first functional holes 133 is greater than the aperture of the first functional hole 133. Through the above setting, the electromagnetic leakage effect is reduced, and better via impedance and signal transmission performance are obtained.

[0078] Optionally, the antenna structure 11 is a microstrip antenna structure.

[0079] Optionally, the radio device includes a millimeter wave radar.

[0080] Specifically, the antenna structure 11 in the embodiment of the present application can be a microstrip antenna structure in a small 4D imaging radar vertical interconnection design. The radio device includes a millimeter wave radar, which can be applied to a vehicle-mounted millimeter wave radar.

[0081] Figure 6 is a structure transmission coefficient diagram of a small 4D imaging radar vertical interconnection design provided by the embodiment of the present application, and the functional stack structure 13 adopts the scheme in the above embodiment, as shown in the figure, Figure 6 As shown, it has better impedance matching and signal transmission performance in the millimeter wave radar working frequency range of 70-80GHz, the reflection coefficient S1.1 is about -20dB, and the insertion loss S1.2 is about 0.5dB. It is a relatively simple, lower cost and higher reliability scheme compared with a 3D waveguide vertical interconnection antenna structure.

[0082] Figure 7 is a vertical interconnection antenna reflection coefficient diagram provided by the embodiment of the present application, and the reflection coefficient return loss is below -10dB in the 76.5-78.5GHz wideband range. A wider working frequency range can make the radar have better distance resolution capability.

[0083] Figure 8The main beam gain of the vertical interconnection antenna pattern reaches 15.22 dB@77.5 GHz, the antenna structure side lobe is about-20 dB horizontally, the radar has higher gain and better ranging and anti-interference ability, the functional stacking structure 13 is used, the antenna can be arranged on different layers from electronic elements, on one hand, a smaller profile than the 3D waveguide antenna structure can be realized, and in the range of ensuring small size requirements, the maximum antenna physical aperture benefit is obtained, and then the miniaturized high-angle resolution radar is realized.

[0084] The radio device provided by the embodiment of the application comprises an antenna structure, a circuit structure and a functional stacking structure; the functional stacking structure comprises a first functional layer to an Nth functional layer stacked along a first direction and a medium layer between the functional layers, N is a positive integer and N is greater than or equal to 2; the functional stacking structure comprises at least one first functional hole, the first functional hole at least penetrates the first functional layer, and the first functional hole is filled with a first connecting part; and the antenna structure and the circuit structure are electrically connected through the first functional hole.

[0085] The embodiment of the application realizes vertical interconnection of signals in a single board medium plate through a multi-layer functional layer and a medium layer through hole and a back drilling hole process design, the 3D waveguide antenna structure in a D millimeter wave radar needs to be interconnected with a chip PCB, and a microstrip to waveguide structure needs to be connected between the two, which causes the existing 4D millimeter wave radar to be unable to meet the needs of miniaturization and high resolution, the miniaturization and high resolution of the 4D millimeter wave radar product are realized, the product is more integrated and has high reliability, and mass production at low cost is facilitated.

[0086] It should be understood that the various forms of flow shown above can be used to reorder, add or delete steps. For example, each step described in the present application can be executed in parallel, sequentially or in a different order, as long as the desired results of the technical solutions of the present application can be achieved, and the present application is not limited herein.

[0087] The above specific embodiments do not constitute a limitation on the protection scope of the present application. Those skilled in the art should understand that various modifications, combinations, sub-combinations and substitutions can be made according to design requirements and other factors. Any modification, equivalent replacement and improvement within the spirit and principles of the present application shall be included in the protection scope of the present application.

Claims

1. A radio device, characterized by The application relates to an antenna structure, a circuit structure and a functional stack structure. The functional stack structure comprises first to Nth functional layers and medium layers between the functional layers, which are stacked along a first direction, N is a positive integer and N>=2. The functional stack structure comprises at least one first functional hole, which penetrates at least the first functional layer, and a first connecting part filled in the first functional hole. The antenna structure and the circuit structure are electrically connected through the first functional hole. The functional stack structure comprises a first dummy hole, which penetrates at least the Nth functional layer along the first direction. The first dummy hole is a grounding via hole, which is used for eliminating electromagnetic radiation and interference generated by the first functional hole during signal transmission and eliminating static electricity and interference in the functional layers. The first dummy hole and the first functional hole are connected and penetrate the first to Nth functional layers along the first direction, or the first dummy hole and the first functional hole are spaced by at least one medium layer along the first direction. The functional layers comprise a second connecting part, which is used for electrically connecting two first functional holes.

2. The radio device according to claim 1, characterized in that, The antenna structure and the circuit structure are located on the same side of the functional stack structure.

3. The radio device of claim 1, wherein, The antenna structure and the circuit structure are electrically connected through at least two first functional holes, which penetrate the same functional layers. The antenna structure and the circuit structure are located on opposite sides of the functional stack structure.

4. The radio device of claim 1, wherein, The antenna structure and the circuit structure are electrically connected through at least one first functional hole, which penetrates the first to Nth functional layers. The functional stack structure comprises an edge medium layer and a middle medium layer, the edge medium layer is in contact with the first functional layer or the Nth functional layer, and the middle medium layer is not in contact with the first functional layer and the Nth functional layer.

5. The radio device of claim 1, wherein, The medium loss constant of the edge medium layer is lower than that of the middle medium layer. The first dummy hole covers the first functional hole in the vertical projection of the first functional layer along the first direction.

6. The radio device of claim 1, wherein, The functional stack structure comprises at least one second functional hole, which penetrates the first to Nth functional layers and is grounded.

7. The radio device of claim 1, wherein, The distance between adjacent functional holes along a second direction is d1, and the second direction is perpendicular to the first direction.

8. The radio device of claim 1, wherein, The aperture of the functional hole is d2. d1 is greater than d2. The antenna structure is a microstrip antenna structure.

9. The radio device of claim 1, wherein, The radio device comprises a millimeter wave radar.

10. The radio device of claim 1, wherein, ​

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