Inverse perovskite photovoltaic devices

Abstract

The present invention provides an inverse perovskite photovoltaic device, which belongs to the field of photovoltaic electronic technology. The inverse perovskite photovoltaic device includes a transparent substrate, a conductive anode, a hole transport layer, an organic spacer layer, a perovskite photosensitive layer, a functional electron transport layer and a metal cathode arranged in sequence from bottom to top, and the functional electron transport layer includes an EGO-PEA material, and the structural formula of EGO-PEA is wherein X is one of I-, Br-, and Cl-. The inverse perovskite photovoltaic device of the present invention can effectively optimize the final film-forming quality of the perovskite photovoltaic device by introducing an organic spacer layer and a functional electron transport layer, passivate the surface of the perovskite photovoltaic device and reduce interface defects, thereby achieving efficient charge collection and improving the photoelectric conversion efficiency of the device; in addition, the organic spacer layer and the functional electron transport layer can also play an encapsulation role, improve the hydrophobicity of the perovskite photosensitive layer, and further improve the environmental stability of the perovskite photovoltaic device.

Description

Technical Field

[0001] The invention relates to an inverse perovskite photovoltaic device, belonging to the technical field of photovoltaic electronics. Background Art

[0002] Solar energy is the most abundant renewable energy source, boasting inexhaustible and pollution-free resources. It has become a new energy source being developed and utilized by scientists worldwide. Among various solar cell technologies, thin-film solar cells based on perovskite materials have experienced rapid development in recent years due to their simple device structure, relatively straightforward processing, and lower production costs.

[0003] Currently, the energy conversion efficiency of photovoltaic devices based on perovskite materials has exceeded 25%. However, perovskite materials have inherent instability. In external environments (such as moisture, oxygen, heat, and ultraviolet light), the long-term stability of devices is poor, which directly limits their future commercial development.

[0004] Therefore, the most important task at present is to accelerate the research on device stability while steadily improving device efficiency. A key factor affecting the performance of perovskite solar cells is the control of the film-forming properties of the perovskite material film. The film-forming properties of perovskite films, such as crystallinity, surface roughness, film thickness, defect level and density, determine the carrier transport and recombination dynamics, thereby affecting the photovoltaic performance of the device. Currently, most research efforts focus on optimizing the morphology and crystallinity of perovskite films. However, there is little research on the effects of passivation on the final film quality through the treatment of transperovskite films.

[0005] In view of this, it is indeed necessary to propose improvements to existing inverse perovskite photovoltaic devices to solve the above problems. Summary of the Invention

[0006] The purpose of the present invention is to provide an inverse perovskite photovoltaic device to solve the problems of low efficiency and poor stability of traditional perovskite photovoltaic devices.

[0007] To achieve the above object, the present invention provides an inverse perovskite photovoltaic device, comprising a transparent substrate, a conductive anode, a hole transport layer, an organic spacer layer, a perovskite photosensitive layer, a functional electron transport layer and a metal cathode arranged in sequence from bottom to top, wherein the functional electron transport layer comprises an EGO-PEA material, and the structural formula of EGO-PEA is Wherein, X is one of I-, Br-, and Cl-.

[0008] As a further improvement of the present invention, the concentration of the EGO-PEA material in the functional electron transport layer is 1%-5%.

[0009] As a further improvement of the present invention, the functional electron transport layer further comprises any one material or a combination of multiple materials selected from PCBM, ICBA, Bis-C60, and BCP.

[0010] As a further improvement of the present invention, the material of the organic spacer layer is EGO-PEA material.

[0011] As a further improvement of the present invention, the thickness of the organic spacer layer is 5-10 nm.

[0012] As a further improvement of the present invention, the perovskite photosensitive layer is MAPbX3, FAPbX3, (FAPbX3) 1-y (MAPbX3) y 、Cs y FA 1-y PbX3、CsPbI y Br 3-y Any one or more combinations thereof, wherein X is one of I-, Br-, and Cl-, and 0≤y≤1.

[0013] As a further improvement of the present invention, the material of the transparent substrate is any one or more combinations of glass, transparent polymer flexible materials, and biodegradable flexible materials.

[0014] As a further improvement of the present invention, the transparent polymer flexible material is any one or more combinations of polyethylene, polymethyl methacrylate, polycarbonate, polyurethane, polyimide, chlorovinyl resin, and polyacrylic acid.

[0015] As a further improvement of the present invention, the material of the conductive anode is any one or more combinations of indium tin oxide, graphene, and carbon nanotubes.

[0016] As a further improvement of the present invention, the material of the hole transport layer is any one or more combinations of molybdenum trioxide, PEDOT:PSS, CuI, CuSCN, CuPc, NiO, P3HT, Spiro-OMeTAD, and PTAA.

[0017] The beneficial effects of the present invention are as follows: the organic spacer layer and the functional electron transport layer of the present invention can effectively optimize the final film quality of the perovskite photovoltaic device, passivate the surface of the perovskite photovoltaic device and reduce interface defects, thereby achieving efficient charge collection and improving the photoelectric conversion efficiency of the device; in addition, the organic spacer layer and the functional electron transport layer can also play an encapsulation role, thereby improving the hydrophobicity of the perovskite photosensitive layer and further improving the environmental stability of the perovskite photovoltaic device. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Figure 1It is a schematic structural diagram of an inverse perovskite photovoltaic device according to a preferred embodiment of the present invention.

[0019] Figure 2 This is a comparison diagram of the JV curves of the perovskite photovoltaic device prepared in Example 1 of the present invention and the perovskite photovoltaic device prepared in Comparative Example 1.

[0020] Figure 3 This is a comparison chart of the environmental stability of the perovskite photovoltaic device prepared in Example 2 of the present invention and the perovskite photovoltaic device prepared in Comparative Example 2 in air.

[0021] Figure 4 3 is a comparison diagram of the contact angles of the perovskite photovoltaic devices in Examples 3 and 4 of the present invention.

[0022] Figure 5 These are the JV test curves of the perovskite photovoltaic devices in Examples 7, 8 and 9 of the present invention.

[0023] Figure 6 It is a morphology comparison diagram of the perovskite photovoltaic device thin film in Example 10 of the present invention and the perovskite photovoltaic device thin film in Comparative Example 3.

[0024] Explanation of the reference numerals: transparent substrate 1 , conductive anode 2 , hole transport layer 3 , organic spacer layer 4 , perovskite photosensitive layer 5 , functional electron transport layer 6 , metal cathode 7 . DETAILED DESCRIPTION

[0025] In order to make the objectives, technical solutions and advantages of the present invention more clear, the present invention is described in detail below with reference to the accompanying drawings and specific embodiments.

[0026] See also Figure 1 As shown, the present invention discloses an inverse perovskite photovoltaic device, comprising a transparent substrate 1, a conductive anode 2, a hole transport layer 3, an organic spacer layer 4, a perovskite photosensitive layer 5, a functional electron transport layer 6 and a metal cathode 7 arranged in sequence from bottom to top.

[0027] The functional electron transport layer 6 includes EGO-PEA material and conventional materials. The structural formula of EGO-PEA is: Wherein, X is one of I-, Br-, and Cl-.

[0028] Specifically, the concentration of the EGO-PEA material in the functional electron transport layer 6 is 1%-5%, and the concentration of the conventional material is 95%-99%, wherein the conventional material is any one of PCBM, ICBA, Bis-C60, and BCP, or a combination of multiple materials.

[0029] The material of the organic spacer layer 4 is EGO-PEA material, that is, the organic spacer layer 4 is made of EGO-PEA material, wherein the thickness of the organic spacer layer 4 is 5-10 nm, preferably, the thickness of the organic spacer layer 4 is 5 nm.

[0030] Among them, the perovskite photosensitive layer 5 is MAPbX3, FAPbX3, (FAPbX3) 1-y (MAPbX3) y 、Cs y FA 1-y PbX3、CsPbI y Br 3-y Any one or more combinations thereof, wherein X is one of I-, Br-, and Cl-, and 0≤y≤1.

[0031] The material of the transparent substrate 1 is any one or more combinations of glass, transparent polymer flexible material, and biodegradable flexible material. The transparent polymer flexible material is any one or more combinations of polyethylene, polymethyl methacrylate, polycarbonate, polyurethane, polyimide, vinyl chloride resin, and polyacrylic acid.

[0032] The material of the conductive anode 2 is any one or more combinations of indium tin oxide, graphene, and carbon nanotubes.

[0033] The material of the hole transport layer 3 is any one or more combinations of molybdenum trioxide, PEDOT:PSS, CuI, CuSCN, CuPc, NiO, P3HT, Spiro-OMeTAD, and PTAA.

[0034] The material of the metal cathode layer 7 is any one or more combinations of aluminum, titanium, palladium, nickel, chromium, copper, gold, and silver.

[0035] The following are specific embodiments, comparative examples, and test analysis of the embodiments and comparative examples provided by the present invention:

[0036] Example 1

[0037] The substrate consisting of a substrate and a transparent conductive anode ITO is cleaned and blown dry with nitrogen after cleaning; MoO3 with a thickness of 10 nm is evaporated on the surface of the transparent conductive anode ITO to prepare a hole transport layer 3; EGO-PEA with a thickness of 5 nm is spin-coated on the hole transport layer 3 to prepare an organic spacer layer 4; MAPbI3 with a thickness of 300 nm is spin-coated on the organic spacer layer 4 to prepare a perovskite photosensitive layer 5; a functional electron transport layer 6 with a thickness of 10 nm is spin-coated on the surface of the perovskite photosensitive layer 5, wherein the functional electron transport layer 6 includes EGO-PEA material and PCBM, and the concentration of the EGO-PEA material is 1%. Cu with a thickness of 100 nm is evaporated on the functional electron transport layer 6 to prepare a metal cathode 7, thereby obtaining an inverse perovskite photovoltaic device.

[0038] Example 2

[0039] The substrate consisting of a substrate and a transparent conductive anode ITO is cleaned and blown dry with nitrogen after cleaning; PTAA with a thickness of 10 nm is evaporated on the surface of the transparent conductive anode ITO to prepare a hole transport layer 3; EGO-PEA with a thickness of 5 nm is spin-coated on the hole transport layer 3 to prepare an organic spacer layer 4; MAPbI3 with a thickness of 300 nm is spin-coated on the organic spacer layer 4 to prepare a perovskite photosensitive layer 5; a functional electron transport layer 6 with a thickness of 10 nm is spin-coated on the surface of the perovskite photosensitive layer 5, wherein the functional electron transport layer 6 includes EGO-PEA material and PCBM, and the concentration of the EGO-PEA material is 2%. Cu with a thickness of 100 nm is evaporated on the functional electron transport layer 6 to prepare a metal cathode 7, thereby obtaining an inverse perovskite photovoltaic device.

[0040] Example 3

[0041] The substrate, consisting of a substrate and a transparent conductive anode graphene, was cleaned and dried with nitrogen. A 10nm thick layer of Spiro-OMeTAD was spin-coated on the surface of the transparent conductive anode graphene to form a hole transport layer 3. A 5nm thick layer of EGO-PEA was spin-coated on the hole transport layer 3 to form an organic spacer layer 4. A 300nm thick layer of CsPbI2Br was spin-coated on the organic spacer layer 4 to form a perovskite photosensitive layer 5. A 10nm thick layer of PCBM was spin-coated on the surface of the perovskite photosensitive layer 5 to form an electron transport layer. A 100nm thick layer of Ag was evaporated on the electron transport layer to form a metal cathode 7, thereby obtaining an inverse perovskite photovoltaic device. Under standard testing conditions (AM1.5 illumination), the inverse perovskite photovoltaic device achieved a photoelectric conversion efficiency of 13.5%.

[0042] Example 4

[0043] The substrate, consisting of a substrate and a transparent conductive anode graphene, was cleaned and dried with nitrogen. A 10nm thick layer of Spiro-OMeTAD was spin-coated on the surface of the transparent conductive anode graphene to form a hole transport layer 3. A 5nm thick layer of EGO-PEA was spin-coated on the hole transport layer 3 to form an organic spacer layer 4. A 300nm thick layer of CsPbI2Br was spin-coated on the organic spacer layer 4 to form a perovskite photosensitive layer 5. A 10nm thick functional electron transport layer 6 was spin-coated on the surface of the perovskite photosensitive layer 5. The functional electron transport layer 6 comprised EGO-PEA and PCBM at a 3% concentration. A 100nm thick layer of Ag was evaporated on the functional electron transport layer 6 to form a metal cathode 7, resulting in an inverse perovskite photovoltaic device. Under standard testing conditions (AM1.5 illumination), the inverse perovskite achieved a photoelectric conversion efficiency of 15.2%. That is, compared with Example 3, the difference of Example 4 is that the functional electron transport layer 6 is doped with 3% of EGO-PEA material, and the photoelectric conversion efficiency of the photovoltaic device is significantly improved.

[0044] Example 5

[0045] The substrate, consisting of a substrate and a transparent conductive anode (ITO), was cleaned and dried with nitrogen. A 10nm thick layer of PEDOT:PSS was spin-coated on the surface of the transparent conductive anode (ITO) to form a hole transport layer 3. A 10nm thick layer of EGO-PEA was spin-coated on the hole transport layer 3 to form an organic spacer layer 4. A 300nm thick layer of FAPbI3 was spin-coated on the organic spacer layer 4 to form a perovskite photosensitive layer 5. A 10nm thick functional electron transport layer 6 was spin-coated on the surface of the perovskite photosensitive layer 5. The functional electron transport layer 6 comprised EGO-PEA and ICBA at an 8% concentration of EGO-PEA. A 100nm thick layer of Cu was evaporated on the functional electron transport layer 6 to form a metal cathode 7, thereby obtaining an inverse perovskite photovoltaic device. Under standard testing conditions (AM1.5 illumination), the inverse perovskite photovoltaic device achieved a photoelectric conversion efficiency of 15.7%.

[0046] At the same time, a comparative example was prepared according to the conditions in Example 5. The difference between this comparative example and Example 5 is that the electron transport layer of the comparative example is not doped with EGO-PEA material. Under standard test conditions (AM1.5 illumination), the photoelectric conversion efficiency of the inverse perovskite photovoltaic device in the comparative example is 16.3%, and the photoelectric conversion efficiency of Example 5 is similar to that of the comparative example.

[0047] Example 6

[0048] The substrate consisting of the substrate and the transparent conductive anode ITO was cleaned and dried with nitrogen gas after cleaning; PTAA with a thickness of 10 nm was spin-coated on the surface of the transparent conductive anode ITO to prepare a hole transport layer 3; EGO-PEA with a thickness of 7 nm was spin-coated on the hole transport layer 3 to prepare an organic spacer layer 4; Cs with a thickness of 300 nm was spin-coated on the organic spacer layer 4. 0.05 FA 0.95 PbI2Br was used to prepare a perovskite photosensitive layer 5; a functional electron transport layer 6 with a thickness of 10 nm was spin-coated on the surface of the perovskite photosensitive layer 5, wherein the functional electron transport layer 6 included EGO-PEA material and ICBA, and the concentration of the EGO-PEA material was 0.5%. Au with a thickness of 100 nm was evaporated on the functional electron transport layer 6 to prepare a metal cathode 7, thereby obtaining an inverse perovskite photovoltaic device. Under standard test conditions (AM1.5 light), the photoelectric conversion efficiency of the inverse perovskite photovoltaic device was 19.3%; the contact angle of water in the thin film of the inverse perovskite photovoltaic device was 82°.

[0049] At the same time, a comparative example was prepared according to the conditions in Example 6. The difference between this comparative example and Example 6 is that the electron transport layer of the comparative example is not doped with EGO-PEA material. Under standard test conditions (AM1.5 illumination), the photoelectric conversion efficiency of the inverse perovskite photovoltaic device in the comparative example is 18.5%. That is to say, doping the electron transport layer with EGO-PEA material improves the photoelectric conversion efficiency of the inverse perovskite photovoltaic device. The test results show that the contact angle of thin film water of the inverse perovskite photovoltaic device in the comparative example is 80°, and the hydrophobicity of the inverse perovskite photovoltaic device in Example 6 and the comparative example is similar. Combined with the analysis of the photoelectric conversion efficiency and environmental stability of the inverse perovskite photovoltaic device, it can be obtained that the optimal doping concentration of the EGO-PEA material in the functional electron transport layer 6 is 1%-5%.

[0050] Example 7

[0051] The substrate consisting of the substrate and the transparent conductive anode carbon nanotubes was cleaned and dried with nitrogen gas after cleaning; P3HT with a thickness of 10 nm was spin-coated on the surface of the transparent conductive anode carbon nanotubes to prepare a hole transport layer 3; EGO-PEA with a thickness of 2 nm was spin-coated on the hole transport layer 3 to prepare an organic spacer layer 4; (FAPbI3) with a thickness of 300 nm was spin-coated on the organic spacer layer 4 0.3 (MAPbBr3) 0.7To prepare a perovskite photosensitive layer 5, a 10 nm thick functional electron transport layer 6 was spin-coated on the surface of the perovskite photosensitive layer 5. The functional electron transport layer 6 comprised an EGO-PEA material and PCBM at a 4% concentration. A 100 nm thick layer of Au was evaporated on the functional electron transport layer 6 to form a metal cathode 7, resulting in an inverse perovskite photovoltaic device. Under standard testing conditions (AM1.5 illumination), the inverse perovskite photovoltaic device achieved a photoelectric conversion efficiency of 17.0%.

[0052] At the same time, a comparative example was prepared according to the conditions in Example 7. The difference between this comparative example and Example 7 is that no organic spacer layer 4 is set in the comparative example. Under standard test conditions (AM1.5 light), the photoelectric conversion efficiency of the inverse perovskite photovoltaic device in the comparative example is 16.4%. That is to say, adding an organic spacer layer 4 made of EGO-PEA material to the photovoltaic device can improve the photoelectric conversion efficiency of the photovoltaic device.

[0053] Example 8

[0054] The substrate consisting of the substrate and the transparent conductive anode carbon nanotubes was cleaned and dried with nitrogen gas after cleaning; P3HT with a thickness of 10 nm was spin-coated on the surface of the transparent conductive anode carbon nanotubes to prepare a hole transport layer 3; EGO-PEA with a thickness of 5 nm was spin-coated on the hole transport layer 3 to prepare an organic spacer layer 4; (FAPbI3) with a thickness of 300 nm was spin-coated on the organic spacer layer 4 0.3 (MAPbBr3) 0.7 To prepare a perovskite photosensitive layer 5, a 10nm-thick functional electron transport layer 6 was spin-coated on the surface of the perovskite photosensitive layer 5. The functional electron transport layer 6 comprised EGO-PEA and PCBM at a 4% concentration. A 100nm-thick layer of Au was evaporated on the functional electron transport layer 6 to form a metal cathode 7, resulting in an inverse perovskite photovoltaic device. Under standard testing conditions (AM1.5 illumination), the inverse perovskite photovoltaic device achieved a photoelectric conversion efficiency of 18.2%.

[0055] Example 9

[0056] The substrate consisting of the substrate and the transparent conductive anode carbon nanotubes was cleaned and dried with nitrogen gas after cleaning; P3HT with a thickness of 10 nm was spin-coated on the surface of the transparent conductive anode carbon nanotubes to prepare a hole transport layer 3; EGO-PEA with a thickness of 12 nm was spin-coated on the hole transport layer 3 to prepare an organic spacer layer 4; (FAPbI3) with a thickness of 300 nm was spin-coated on the organic spacer layer 4 0.3 (MAPbBr3) 0.7To prepare a perovskite photosensitive layer 5, a 10nm-thick functional electron transport layer 6 was spin-coated on the surface of the perovskite photosensitive layer 5. The functional electron transport layer 6 comprised EGO-PEA and PCBM, with the EGO-PEA concentration being 4%. A 100nm-thick layer of Au was evaporated on the functional electron transport layer 6 to form a metal cathode 7, resulting in an inverse perovskite photovoltaic device. Under standard testing conditions (AM1.5 illumination), the inverse perovskite photovoltaic device achieved a photoelectric conversion efficiency of 16.7%.

[0057] Example 10

[0058] The substrate consisting of the substrate and the transparent conductive anode graphene was cleaned and dried with nitrogen gas after cleaning; PTAA with a thickness of 10 nm was spin-coated on the surface of the transparent conductive anode graphene to prepare a hole transport layer 3; EGO-PEA with a thickness of 6 nm was spin-coated on the hole transport layer 3 to prepare an organic spacer layer 4; (FAPbI3) with a thickness of 300 nm was spin-coated on the organic spacer layer 4 0.5 (MAPbBr3) 0.5 To prepare a perovskite photosensitive layer 5, a 10nm-thick functional electron transport layer 6 was spin-coated on the surface of the perovskite photosensitive layer 5. The functional electron transport layer 6 comprised EGO-PEA and Bis-C60 at a 1% concentration of EGO-PEA. A 100nm-thick layer of Cu was evaporated on the functional electron transport layer 6 to form a metal cathode 7, resulting in an inverse perovskite photovoltaic device. Under standard testing conditions (AM1.5 illumination), the inverse perovskite photovoltaic device achieved a photoelectric conversion efficiency of 18.7%.

[0059] Comparative Example 1

[0060] The substrate, consisting of the substrate and the transparent conductive anode ITO, was cleaned and then dried with nitrogen. A 10 nm thick layer of MoO3 was evaporated on the surface of the transparent conductive anode ITO to form a hole transport layer 3. A 300 nm thick layer of MAPbI3 was spin-coated on the hole transport layer 3 to form a perovskite photosensitive layer 5. A 10 nm thick layer of PCBM was spin-coated on the surface of the perovskite photosensitive layer 5 to form an electron transport layer. A 100 nm thick layer of Cu was evaporated on the electron transport layer to form a metal cathode 7, thereby obtaining an inverse perovskite photovoltaic device. In other words, compared to Example 1, no EGO-PEA material was added in Comparative Example 1.

[0061] Comparative Example 2

[0062] The substrate, consisting of the substrate and the transparent conductive anode ITO, was cleaned and then dried with nitrogen. PTAA was evaporated on the surface of the transparent conductive anode ITO to a thickness of 10 nm to form a hole transport layer 3. MAPbI3 was spin-coated on the hole transport layer 3 to form a perovskite photosensitive layer 5 to a thickness of 300 nm. PCBM was spin-coated on the surface of the perovskite photosensitive layer 5 to form an electron transport layer. Cu was evaporated on the electron transport layer to a thickness of 100 nm to form a metal cathode 7, thereby obtaining an inverse perovskite photovoltaic device. In other words, compared with Example 2, no EGO-PEA material was added in Comparative Example 2.

[0063] Comparative Example 3

[0064] The substrate consisting of the substrate and the transparent conductive anode graphene was cleaned and dried with nitrogen gas after cleaning; PTAA with a thickness of 10 nm was spin-coated on the surface of the transparent conductive anode graphene to prepare a hole transport layer 3; (FAPbI3) with a thickness of 300 nm was spin-coated on the hole transport layer 3 0.5 (MAPbBr3) 0.5 To prepare the perovskite photosensitive layer 5, a 10 nm thick layer of Bis-C60 was spin-coated on the surface of the perovskite photosensitive layer 5 to form an electron transport layer. A 100 nm thick layer of Cu was evaporated on the electron transport layer to form a metal cathode 7, thereby obtaining an inverse perovskite photovoltaic device. In other words, compared to Example 10, no EGO-PEA material was added in Comparative Example 3. Under standard testing conditions (AM1.5 illumination), the inverse perovskite photovoltaic device achieved a photoelectric conversion efficiency of 16.5%.

[0065] See also Figure 2 As shown, under AM1.5 illumination conditions, the inverse perovskite photovoltaic device prepared in Example 1 and the inverse perovskite photovoltaic device prepared in Comparative Example 1 were tested, and the JV characteristic curves of the two photovoltaic devices were tested. It can be seen from the curves that the photoelectric conversion efficiency of the inverse perovskite photovoltaic device in Example 1 is higher than that of the inverse perovskite photovoltaic device in Comparative Example 1, that is, the addition of EGO-PEA material improves the photoelectric conversion efficiency of the inverse perovskite photovoltaic device.

[0066] See also Figure 3As shown, under AM1.5 illumination conditions, the inverse perovskite photovoltaic device prepared in Example 2 and the inverse perovskite photovoltaic device prepared in Comparative Example 2 were tested to test the environmental stability of the two photovoltaic devices in the air. It can be seen from the curve that the environmental stability of the inverse perovskite photovoltaic device in Example 2 is much higher than that of the inverse perovskite photovoltaic device in Comparative Example 2. After 500 hours of unpackaged testing, the photoelectric conversion efficiency of the inverse perovskite photovoltaic device in Comparative Example 2 decreased by about 45%, while the photoelectric conversion efficiency of the inverse perovskite photovoltaic device in Example 2 only decreased by about 25%. That is, the addition of EGO-PEA material improves the environmental stability of the inverse perovskite photovoltaic device.

[0067] See also Figure 4 As shown, the contact angle of thin film water of the inverse perovskite photovoltaic device prepared in Example 3 is 85°, and the contact angle of thin film water of the inverse perovskite photovoltaic device prepared in Example 4 is 96°. It can be seen that after doping the functional electron transport layer 6 with EGO-PEA material, the contact angle of thin film water is increased, the water erosion resistance of the photovoltaic device is improved, and the environmental stability of the photovoltaic device is better.

[0068] See also Figure 5 As shown, Example 7, Example 8 and Example 9 are analyzed, wherein the difference between Example 7, Example 8 and Example 9 is that the thickness of the organic spacer layer 4 in the photovoltaic device is different. It can be seen from the JV test curve that with the increase of the thickness of the organic spacer layer 4, the photoelectric conversion efficiency of the photovoltaic device shows a trend of first increasing and then decreasing. Through analysis, it can be obtained that the optimal thickness of the organic spacer layer 4 in the photovoltaic device is 5nm-10nm.

[0069] See also Figure 6 As shown, the surface morphology of the inverse perovskite photovoltaic device film prepared in Example 10 and Comparative Example 3 is shown. By comparison, it can be seen that the surface morphology uniformity of the inverse perovskite photovoltaic device film prepared in Example 10 is better, the roughness is lower, and the film-forming property is better.

[0070] In summary, the inverse perovskite photovoltaic device of the present invention can effectively optimize the final film quality of the perovskite photovoltaic device by setting the organic spacer layer 4 and the functional electron transport layer 6, passivate the surface of the perovskite photovoltaic device and reduce interface defects, thereby achieving efficient charge collection and improving the photoelectric conversion efficiency of the device; in addition, the organic spacer layer 4 and the functional electron transport layer 6 can also play a packaging role, improve the hydrophobicity of the perovskite photosensitive layer, and further improve the environmental stability of the perovskite photovoltaic device; by using the EGO-PEA material to prepare the organic spacer, the perovskite film crystal grains are more uniform, the film forming property is better, which is conducive to charge transport, thereby improving the photoelectric conversion efficiency of the battery; by introducing EGO-PEA material into the functional electron transport layer 6, and using EGO-PEA material to prepare the organic spacer layer 4, the perovskite film is double-modified by the organic spacer layer 4 and the functional electron transport layer 6, so that the contact angle of the perovskite film is increased, thereby improving the hydrophobicity of the perovskite photosensitive layer 5, and then improving the stability of the battery; by setting the structure of the inverse perovskite photovoltaic device to an inverse "sandwich" type, all functional layer materials are formed by evaporation and low-temperature spin coating, which has the advantages of simple device preparation process, low equipment requirements, short process, less time consumption and low cost.

[0071] The above embodiments are only used to illustrate the technical solutions of the present invention and are not intended to limit the present invention. Although the present invention has been described in detail with reference to the preferred embodiments, it should be understood by those skilled in the art that the technical solutions of the present invention may be modified or replaced by equivalents without departing from the spirit and scope of the technical solutions of the present invention.

Claims

1. An inverse perovskite photovoltaic device, characterized in that: The present invention comprises a transparent substrate, a conductive anode, a hole transport layer, an organic spacer layer, a perovskite photosensitive layer, a functional electron transport layer and a metal cathode arranged in sequence from bottom to top, wherein the functional electron transport layer comprises an EGO-PEA material, and the structural formula of EGO-PEA is Wherein, X is one of I-, Br-, and Cl-.

2. The inverse perovskite photovoltaic device according to claim 1, characterized in that: The concentration of the EGO-PEA material in the functional electron transport layer is 1%-5%.

3. The inverse perovskite photovoltaic device according to claim 2, characterized in that: The functional electron transport layer further comprises any one material or a combination of multiple materials selected from PCBM, ICBA, Bis-C60 and BCP.

4. The inverse perovskite photovoltaic device according to claim 1, characterized in that: The material of the organic spacer layer is EGO-PEA material.

5. The inverse perovskite photovoltaic device according to claim 4, characterized in that: The thickness of the organic spacer layer is 5-10 nm.

6. The inverse perovskite photovoltaic device according to claim 1, characterized in that: The perovskite photosensitive layer is MAPbX3, FAPbX3, (FAPbX3) 1-y (MAPbX3) y 、Cs y FA 1-y PbX3、CsPbI y Br 3-y Any one or more combinations thereof, wherein X is one of I-, Br-, and Cl-, and 0≤y≤1.

7. The inverse perovskite photovoltaic device according to claim 1, characterized in that: The material of the transparent substrate is any one or more combinations of glass, transparent polymer flexible materials, and biodegradable flexible materials.

8. The inverse perovskite photovoltaic device according to claim 7, characterized in that: The transparent polymer flexible material is any one or more combinations of polyethylene, polymethyl methacrylate, polycarbonate, polyurethane, polyimide, chloroacetic acid resin, and polyacrylic acid.

9. The inverse perovskite photovoltaic device according to claim 1, characterized in that: The material of the conductive anode is any one or more combinations of indium tin oxide, graphene, and carbon nanotubes.

10. The inverse perovskite photovoltaic device according to claim 1, characterized in that: The material of the hole transport layer is any one or more combinations of molybdenum trioxide, PEDOT:PSS, CuI, CuSCN, CuPc, NiO, P3HT, Spiro-OMeTAD, and PTAA.

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