An optical phased array, a lidar launch module, and a lidar

Abstract

The application discloses an optical phased array, a laser radar emitting module and a laser radar, and the optical phased array comprises: an optical coupling area used for coupling light emitted by a laser into an input end of an optical beam splitting area; the optical beam splitting area is used for equally or unequally distributing the received light to a plurality of antenna element waveguides; a phase modulation area is used for modulating the phase of the transmitted light by applying an electric field to the antenna element waveguides through an electrode unit; and an optical output area is used for radiating the phase-modulated light to free space. A one-dimensional periodic F-type silicon block structure is arranged between the antenna element waveguides and is made to work in a resonance region to suppress optical crosstalk. The optical phased array adopts electric field modulation phase instead of temperature regulation, so that the phase modulation process is not affected by the ambient temperature, and the stability of the phased array is improved. The one-dimensional periodic F-type silicon block structure designed between the antenna element waveguides can greatly reduce the optical crosstalk between the waveguides and greatly improve the overall performance of the optical phased array.

Description

TECHNICAL FIELD

[0001] The present application belongs to the technical and application field of optical phased array, and particularly relates to an optical phased array with low crosstalk and high stability and application thereof. BACKGROUND

[0002] Phased array technology is a kind of full solid-state beam scanning technology without mechanical structure, which has the advantages of high integration, high reliability and convenient control. Phased array technology was first applied in the microwave band, but with the updating of technology, phased array technology is gradually applied in the optical band, forming an optical phased array. The optical phased array can be realized by integrated optoelectronic process technology, and the current antenna array involves silicon-based materials, III-V materials, etc. At the same time, the optical phased array has the advantages of high integration, low power consumption, flexible and high-speed control, and is not only applied in laser radar, but also expected to be applied in optical storage, optical communication and other high-tech fields.

[0003] Generally, the optical phased array includes an optical coupler, a beam splitter, an optical phase shifter and a transmitting antenna unit. Laser is coupled into the input end of the beam splitter through the optical coupler, the input light is split by the beam splitter, and then the light is input into the transmitting antenna unit after being phase-modulated by the optical phase shifter, and finally radiated to the free space by the transmitting antenna unit.

[0004] The current technology proposes to realize the optical phase shifter by combining a hot metal wire with an ohmic heating electrode. However, in the application of unmanned vehicles, the condition of stable operation regardless of the change of environmental temperature is required, and it is not appropriate to change the phase by locally heating the heating metal wire in the current technology.

[0005] The current optical phased array has a typical element spacing of several microns, which greatly affects the aliasing-free beam control range. For a periodic waveguide optical phased array, due to the same phase difference between adjacent waveguides, side lobes are easy to appear in far field interference, resulting in main lobe energy loss and beam widening, which affects the final scanning effect. In order to suppress the side lobes and achieve excellent scanning effect, it is necessary to make the waveguide spacing in subwavelength spacing, but this will cause high coupling between adjacent waveguides, resulting in crosstalk and affecting the overall high performance of the optical phased array. SUMMARY

[0006] The purpose of the present application is to provide an optical phased array, a laser radar transmitting module and a laser radar, which can stably operate regardless of the change of environmental temperature and realize low crosstalk of waveguide array subwavelength spacing.

[0007] Technical scheme: An optical phased array, comprising:

[0008] an optical coupling region for coupling the light emitted by the laser into the input end of the optical beam splitting region;

[0009] a light splitting region for splitting the received light equally or unequally into a plurality of antenna element waveguides;

[0010] a phase modulation region for modulating the phase of the light transmitted through the antenna element waveguides by applying an electric field to the antenna element waveguides through an electrode unit;

[0011] a light output region for radiating the phase-modulated light into free space, and a one-dimensional periodic F-type silicon block structure is arranged between the antenna element waveguides, the one-dimensional periodic F-type silicon block structure is symmetrically arranged along the antenna element waveguides, and the F-type silicon block structure is designed to work in a resonance region by designing the structural parameters of the F-type silicon block structure to suppress optical crosstalk;

[0012] wherein a base top layer of the phase modulation region is a thin film composed of a nonlinear optical material, and the antenna element waveguides located in the phase modulation region are deposited on the thin film to form a hetero ridge waveguide, and the refractive index of the waveguide can change with the Pockels effect of the electro-optic phenomenon.

[0013] Further, the nonlinear optical material is lithium niobate, potassium dihydrogen phosphate, potassium dihydrogen phosphate, lithium iodate, lithium tantalate or lithium triborate.

[0014] Further, the electrode unit is composed of a first electrode and a second electrode arranged on both sides of the antenna element waveguide.

[0015] Further, the portion of the antenna element waveguide located in the phase modulation region is composed of a main waveguide layer and an auxiliary waveguide layer arranged on the upper surface of the main waveguide layer, the main waveguide layer is composed of silicon nitride material, and the auxiliary waveguide layer is composed of silicon material.

[0016] Further, the period of the one-dimensional periodic F-type silicon block structure is comparable to the waveguide wavelength in the antenna element waveguide.

[0017] Further, in the one-dimensional periodic F-type silicon block structure, the length a of the F-type silicon block structure is 300-350 nm, the width b is 250-300 nm, the thickness H _wg of the F-type silicon block structure is 300-350 nm, the etching thickness H e of the top surface is 130-160 nm, the length L n of the non-etched silicon between the two non-etched silicon regions is 70-80 nm, the length L s1 of the etched silicon between the two non-etched silicon regions is 80-90 nm, and the length L s2The period of the one-dimensional periodic F-type silicon block structure is 800 nm, the spacing G between the one-dimensional periodic F-type silicon block structure and the adjacent antenna element waveguide is 45-135 nm, and the spacing D of the antenna element waveguide is 0.8-0.9 microns.

[0018] Further, the thickness of the main waveguide layer is not less than 200 nm, and the thickness of the auxiliary waveguide layer is not more than 150 nm.

[0019] Further, the length L of the antenna element waveguide in the light output area is 100-200 microns, the width W is 380-410 nm, and the thickness is 300-350 nm.

[0020] The laser radar emitting module comprises a laser and the optical phased array; after the light emitted by the laser is coupled into the optical phased array, the optical phased array radiates laser upward to the free space.

[0021] The laser radar further comprises a laser receiving unit and a signal processing unit; the laser receiving unit is used for receiving the light signal reflected by the laser output from the optical phased array on the target object; and the signal processing unit is used for controlling the optical phased array and processing the light signal received by the laser receiving unit.

[0022] Beneficial effects: by depositing a silicon nitride waveguide on a lithium niobate or other nonlinear optical material film, a silicon nitride-lithium niobate hetero-ridge waveguide is formed. This loaded hybrid waveguide continues the strong electro-optic coefficient and high second-order nonlinearity of lithium niobate and other nonlinear optical materials. Therefore, the application of voltage on the electrode produces an electric field, and in the case of forming an electric field in the third layer formed by lithium niobate and other nonlinear optical materials, the effective refractive index of the optical waveguide can change with the Pockels effect of the electro-optic phenomenon. This can realize the replacement of the phase modulation process by the electric field instead of the temperature, and improve the stability of the laser radar.

[0023] By setting a one-dimensional periodic F-type silicon block structure between the antenna element waveguides, it is used as a high-reflection boundary to utilize the evanescent wave of the antenna element waveguide. By properly designing the structural parameters of the F-type silicon block to work in the resonance region, the periodic structure can cut off the energy of the evanescent wave. At the same time, the F-type silicon block structure is asymmetric in the vertical direction, which can improve the radiation ability of the F-type silicon block to the energy of the evanescent wave due to the destruction of the vertical symmetry. Thus, the subwavelength spacing of the antenna element waveguide can be realized, the appearance of the sidelobe can be suppressed, and the overall performance of the optical phased array can be improved. BRIEF DESCRIPTION OF DRAWINGS

[0024] Figure 1 The figure is a schematic diagram of the optical phased array structure of the embodiment of the present application.

[0025] Figure 2 This is a top view of the optical phased array structure according to an embodiment of the present invention;

[0026] Figure 3 This is a cross-sectional view of the phase modulation region of the optical phased array according to an embodiment of the present invention. Figure 1 (Cross-section view along the y-y' direction);

[0027] Figure 4 This is a schematic diagram of the electric field in the phase modulation region of an optical phased array according to an embodiment of the present invention;

[0028] Figure 5 This is a schematic diagram of the three-dimensional structure of the optical output region of an optical phased array according to an embodiment of the present invention;

[0029] Figure 6 This is a top view of the optical output region structure of an optical phased array according to an embodiment of the present invention;

[0030] Figure 7 This is a side view of the optical output region structure of an optical phased array according to an embodiment of the present invention;

[0031] Figure 8 This is a normalized electric field distribution diagram of three waveguides in the optical output region of an embodiment of the present invention (waveguide spacing 0.8 μm, no F-type radiating block);

[0032] Figure 9 This is a normalized electric field distribution diagram of three waveguides in the optical output region of an embodiment of the present invention (waveguide spacing 0.8 μm, with F-type radiating blocks). Detailed Implementation

[0033] The invention will now be further explained with reference to the accompanying drawings.

[0034] like Figure 1 As shown, an optical phased array 10 with low crosstalk and high stability is divided into an optical coupling region 100, an optical distribution region 200, a phase modulation region 300 and an optical output region 400 according to its structure or function.

[0035] Each region includes a base 20 and an optical waveguide 40 on the upper surface of the base 20. The base 20 in each region includes a first layer 21 made of silicon material as a substrate, and a second layer 22 made of silicon dioxide deposited on the upper surface of the first layer 21; that is, the first layer 21 and the second layer 22 extend throughout the entire optical coupling region, optical distribution region, phase modulation region, and optical output region. The base 20 also includes a third layer 23, a thin film made of nonlinear optical materials such as lithium niobate, deposited on the upper surface of the second layer 22. The third layer 23 may be disposed only in the region directly opposite the phase modulation region 300.

[0036] The optical coupling region 100 is provided with a plurality of grating couplers 101 for coupling the light emitted by the laser into the input end of the optical beam splitter region.

[0037] The light distribution region 200 includes a plurality of light splitters 201. The grating coupler 101 couples the laser beam emitted by the laser into the input end of the optical waveguide of the light distribution region 200; the light splitter 201 distributes the received light equally or unequally into a plurality of antenna element waveguides 42. As shown in the figure, there are only 4 antenna element waveguides 42, but in the implementation of the present application, the number of antenna element waveguides 42 is at least 4. Among them, the light splitter 201 can be set as a Y-type splitter, an MMI splitter and a directional coupling type splitter. Figure 1 As shown in the figure, there are only 4 antenna element waveguides 42, but in the implementation of the present application, the number of antenna element waveguides 42 is at least 4. Among them, the light splitter 201 can be set as a Y-type splitter, an MMI splitter and a directional coupling type splitter.

[0038] The phase modulation region 300 includes an electrode unit 301, which is composed of a first electrode 301a and a second electrode 301b arranged on both sides of the antenna element waveguide 42. By applying a voltage to the electrode unit 301 to generate an electric potential, an electric field is formed to modulate the phase of the light transmitted in the antenna element waveguide 42. According to the modulation of the light phase by the phase modulation region 300, the light can be deflected along the X dimension in the figure by the light output region 400.

[0039] The light output region 400 is used to maintain the phase distribution modulated by the phase modulation region 300, while realizing the laser emission in the vertical dimension (Z axis direction in the figure) to the free space. The light output region 400 regulates the distribution range in the vertical dimension according to the wavelength λ of the laser emitted by the laser to the light coupling region 100.

[0040] As shown in the figure, there are only 4 antenna element waveguides 42, but in the implementation of the present application, the number of antenna element waveguides 42 is at least 4. Among them, the light splitter 201 can be set as a Y-type splitter, an MMI splitter and a directional coupling type splitter. Figure 1 In addition to the configuration of the optical phased array 10 shown in the figure, an upper cladding layer not shown in the figure should also be included, which is composed of materials such as silicon dioxide, deposited on the upper surface of the base 20 and completely covers the optical waveguide 40 in the light coupling region 100, the light distribution region 200 and the phase modulation region 300, playing a role in protecting the optical waveguide. However, the upper cladding layer covering the light output region 400 is air material.

[0041] As shown in the figure, there are only 4 antenna element waveguides 42, but in the implementation of the present application, the number of antenna element waveguides 42 is at least 4. Among them, the light splitter 201 can be set as a Y-type splitter, an MMI splitter and a directional coupling type splitter. Figure 3 As shown in the figure, there are only 4 antenna element waveguides 42, but in the implementation of the present application, the number of antenna element waveguides 42 is at least 4. Among them, the light splitter 201 can be set as a Y-type splitter, an MMI splitter and a directional coupling type splitter.

[0042] The antenna element waveguide 42 in the phase modulation region 300 is disposed on the upper surface of the third layer 23, and is composed of a main waveguide layer 42a and a subsidiary waveguide layer 42b disposed on the upper surface of the main waveguide layer 42a. The laser light processed by the light distribution region 200 is mostly transmitted through the main waveguide layer 42a. The main waveguide layer 42a is composed of silicon nitride material. Since the silicon nitride material has low propagation loss and high power handling capability, the silicon nitride can handle the power of most waveguide modes. The subsidiary waveguide layer 42b is composed of silicon material, and has high refractive index stacked on the upper surface of the main waveguide layer 42a, so as to increase the effective refractive index of the antenna element waveguide 42 and reduce the mode size of the optical waveguide.

[0043] Specifically, the subsidiary waveguide layer 42b can reduce the crosstalk between the antenna element waveguides 42 and improve the effective transmission performance of the laser light. The main waveguide layer 42a composed of silicon nitride material and the subsidiary waveguide layer 42b composed of silicon material stacked on the upper surface thereof can increase the effective refractive index of the antenna element waveguide 42 and suppress the crosstalk between the optical waveguides 42. Further, in order to improve the laser output of the optical phased array 10 and increase the ranging distance of the laser radar, if the main waveguide layer 42a is composed of silicon material, it is difficult to achieve due to its low laser threshold power and high propagation loss. Therefore, the main waveguide layer 42a is composed of silicon nitride material, which has the advantage of being easy to interact with adjacent waveguides having the same propagation constant due to the increase in evanescent wave size of the waveguide mode caused by its low refractive index.

[0044] Further, the thickness of the main waveguide layer 42a is designed to be at least 200 nm so as to handle the power of most waveguide modes, and the thickness of the subsidiary waveguide layer is designed to be at most 150 nm so as to minimize the nonlinear loss caused by two-photon absorption.

[0045] The first electrode 301a and the second electrode 301b disposed on both sides of the antenna element waveguide 42 are composed of deposited gold. Gold material has excellent conductivity and good ductility, is easy to process, and belongs to inert metal and is not easy to react with other materials. An electric field is formed by applying a voltage to the first electrode 301a and the second electrode 301b to generate an electric potential. When the electric field is distributed in the third layer 23 formed of lithium niobate and other nonlinear optical materials, the effective refractive index of the antenna element waveguide 42 is changed due to the Pockels effect as an electro-optic phenomenon.

[0046] Further, the thickness of the third layer 23 and the width of the antenna element waveguide 42 are optimized, so that the lithium niobate and the silicon nitride are mixed to form a hetero ridge waveguide, which combines the second-order nonlinearity of the lithium niobate and the low propagation loss of the silicon nitride. An electric field is applied to the third layer 23 composed of the lithium niobate, so that the phase of the antenna element waveguide 42 can be modulated in a wider range, and the Pockels effect of the electro-optic phenomenon is fully displayed.

[0047] As shown in the schematic diagram of the electric field formed in the phase modulation region of the optical phased array according to the embodiment of the present application, Figure 4 the first electrode 301a is a positive electrode, and the second electrode 301b is a negative electrode, so that the electric field is formed.

[0048] For the waveguide optical phased array 10, since the adjacent waveguides have the same phase difference, the sidelobes are prone to appear in the far-field interference, which causes the loss of main lobe energy and the widening of the beam, and affects the beam scanning effect. In order to suppress the sidelobes and increase the horizontal field of view angle of the waveguide optical phased array 10, the distance between the antenna element waveguides 42 needs to be in the subwavelength distance range, which, however, causes the strong coupling of the light field between the adjacent antenna element waveguides 42 and the crosstalk, and affects the overall performance of the optical phased array 10. On the contrary, the light output region 400 of the present application has the advantage of suppressing the crosstalk when the subwavelength distance is used.

[0049] The light output region 400 is used to output the light modulated by the phase modulation region 300 from the antenna element waveguide 42 in the light output region 400. In the light output region 400, the laser light is emitted along the longitudinal direction (the Z-axis direction in the figure). As shown in the schematic diagram of the light output region 400 of the present application, Figure 5 the light output region 400 includes the base 20 and the antenna element waveguides 42 arranged on the upper surface of the base 20. The light output region 400 includes a plurality of antenna element waveguides 42 and a one-dimensional periodic F-type silicon block structure 41 arranged between the antenna element waveguides. The one-dimensional periodic F-type silicon block structure 41 is arranged symmetrically along the antenna element waveguides 42. The part of the antenna element waveguides 42 in the light output region 400 is composed of silicon material, and forms a double-layer transition structure with the main waveguide layer 42a in the phase modulation region 300, so that the laser beam can be efficiently transferred to the silicon waveguide.

[0050] The one-dimensional periodic F-type silicon block structure 41 arranged between the antenna element waveguides 42 is used as a high-reflection boundary to utilize the evanescent wave of the antenna element waveguide. By properly designing the structural parameters of the F-type silicon block, the periodic structure can be made to cut off the energy of the evanescent wave when it works in the resonance region. At the same time, the F-type silicon block structure is asymmetric in the vertical direction, which can improve the radiation ability of the F-type silicon block to the energy of the evanescent wave due to the breaking of the vertical symmetry. Thus, the subwavelength distance of the antenna element waveguide 42 can be realized, and the overall performance of the optical phased array is improved.

[0051] As shown in Figure 6 and Figure 7 , the parameters of the F-shaped silicon block structure 43 are optimized and designed according to a double-etching process. The length a of the F-shaped silicon block structure 43 is set to 300 nm, the width b is set to 280 nm, the thickness H _wg is set to 340 nm, the etching thickness H e of the top surface is set to 160 nm, the length L n of the non-etched silicon is set to 70 nm, the length L s1 of the etched silicon between two non-etched silicon regions is set to 80 nm, the length L s2 of the other etched silicon is set to 80 nm, the period Λ of the one-dimensional periodic F-shaped silicon block structure 41 is set to 800 nm, the duty cycle DC of the one-dimensional periodic F-shaped silicon block structure 41 is set to 0.375, the spacing G between the one-dimensional periodic F-shaped silicon block structure 41 and the antenna element waveguide 42 is set to 60 nm, and the spacing D of the antenna element waveguide 42 is set to 0.8 μm. Thus, the length a of the F-shaped silicon block structure 43 = DC × Λ = 2L n + L s1 + L s2 . According to the one-dimensional periodic F-shaped silicon block structure 41 designed according to the above parameters, the optical crosstalk can be greatly suppressed when the antenna element waveguide 42 is in a subwavelength spacing, and the performance of the optical phased array 10 is improved.

[0052] As shown in Figure 8 , the spacing D between the antenna element waveguides 42 is designed to be 0.8 μm, the length L is designed to be 100 μm, the width W is designed to be 400 nm, the thickness is designed to be 340 nm, and the laser incident wavelength λ is designed to be 1550 nm. When the one-dimensional periodic F-shaped silicon block structure is not set, there is strong coupling of the optical field between the antenna element waveguides 42, and crosstalk occurs.

[0053] As shown in Figure 9 , the spacing D between the antenna element waveguides 42 is designed to be 0.8 μm, the length L is designed to be 100 μm, the width W is designed to be 400 nm, the thickness is designed to be 340 nm, and the laser incident wavelength λ is designed to be 1550 nm. When the one-dimensional periodic F-shaped silicon block structure 41 with the above parameters is set, there is almost no coupling of the optical field between the antenna element waveguides 42, and the crosstalk is greatly suppressed.

[0054] Further, according to the present application, the evanescent field in the antenna element waveguide 42 is periodically disturbed by designing a one-dimensional periodic F-shaped silicon block structure 41, so as to form a radiation grating. By reasonably optimizing the parameters of the F-shaped silicon block structure 41 and the spacing G between the F-shaped silicon block structure 41 and the antenna element waveguide 42, the evanescent field can be modulated accordingly. When the period Λ of the one-dimensional periodic F-shaped silicon block structure 41 is comparable to the waveguide wavelength in the antenna element waveguide 42, the radiation grating can be formed and the laser beam can be radiated to the free space, so as to realize the two-dimensional scanning of the optical phased array 10.

[0055] The optical phased array 10 according to the present application can be manufactured by a complementary metal-oxide-semiconductor (CMOS) process. Moreover, the present application provides a good solution for a high-performance optical phased array with a large field of view and a narrow beam width.

[0056] The optical phased array 10 according to the present application can be applied to a transmitting module of a laser radar light detection and ranging. The transmitting module further includes a laser 1 for emitting a laser beam 2 to the light coupling region 100 of the optical phased array 10. The laser 1 is a tunable laser, and the angle range of the laser beam 2 emitted by the optical phased array 10 can be controlled according to the wavelength of the laser beam 2 emitted by the laser 1.

[0057] According to the laser radar of the transmitting module, a laser receiving module and a signal processing unit are further included. The laser receiving module is configured to receive a light signal reflected by a target object from the laser beam output by the optical phased array 10. The signal processing unit is configured to control the optical phased array 10 and process the light signal received by the laser receiving module.

[0058] The above description is only preferred embodiments of the present application, and it should be pointed out that, for those skilled in the art, some improvements and refinements can be made without departing from the principles of the present application, and these improvements and refinements should also be considered as the protection scope of the present application.

Claims

1. An optical phased array, comprising: The application relates to an optical phased array, which comprises: a light coupling area for coupling laser emission into the input end of a light splitting area; a light splitting area for equally or unequally distributing received light to a plurality of antenna element waveguides; a phase modulation area for modulating the phase of light transmitted through the antenna element waveguides by applying an electric field to the antenna element waveguides through an electrode unit; a light output area for radiating phase-modulated light to free space, and a one-dimensional periodic F-type silicon block structure is arranged between the antenna element waveguides, the one-dimensional periodic F-type silicon block structure is symmetrically arranged along the antenna element waveguides, and the F-type silicon block structure is asymmetric in the direction perpendicular to the antenna waveguides; the F-type silicon block structure is designed to work in a resonance region to suppress optical crosstalk. The base top layer of the phase modulation area is a thin film made of nonlinear optical material, and the antenna element waveguides located in the phase modulation area are deposited on the thin film to form a hetero ridge waveguide, and the refractive index of the waveguide can change with the Pockels effect of the electro-optic phenomenon.

2. An optical phased array according to claim 1, wherein, The nonlinear optical material is lithium niobate, potassium dihydrogen phosphate, potassium dihydrogen phosphate, lithium iodate, lithium tantalate or lithium triborate.

3. An optical phased array according to claim 1, wherein, The electrode unit is composed of a first electrode and a second electrode arranged on both sides of the antenna element waveguide.

4. An optical phased array according to claim 1, wherein, The part of the antenna element waveguide located in the phase modulation area is composed of a main waveguide layer and an auxiliary waveguide layer arranged on the upper surface of the main waveguide layer, the main waveguide layer is made of silicon nitride material, and the auxiliary waveguide layer is made of silicon material.

5. An optical phased array according to claim 1, wherein, The period of the one-dimensional periodic F-type silicon block structure is equivalent to the waveguide wavelength in the antenna element waveguide.

6. An optical phased array according to claim 1, wherein, In the one-dimensional periodic F-type silicon block structure, the length a of the F-type silicon block structure is 300-350 nm, the width b is 250-300 nm, and the thickness H is... _wg The etching thickness H on the top surface is 300-350nm. e The length L of the non-etched silicon is 130-160nm. n The length L of the etched silicon, which is 70-80nm and located between two non-etched silicon regions, is... s1 The length L of the other etched silicon is 80-90nm. s2 The period Λ of the one-dimensional periodic F-type silicon block structure is 80-100nm, the spacing G between the one-dimensional periodic F-type silicon block structure and the waveguide of the adjacent antenna element is 45-135nm, and the spacing D between the waveguides of the antenna element is 0.8-0.9μm.

7. An optical phased array according to claim 4, wherein, The thickness of the main waveguide layer is not less than 200 nm, and the thickness of the auxiliary waveguide layer is not greater than 150 nm.

8. An optical phased array according to claim 6, wherein, The length L of the antenna element waveguide located in the light output area is 100-200 mu m, the width W is 380-410 nm, and the thickness is 300-350 nm.

9. The optical phased array lidar transmit module of any of claims 1-8, wherein, The application also relates to a laser receiving unit and a signal processing unit; the laser receiving unit is used for receiving the optical signal of the laser reflected on the target object; and the signal processing unit is used for controlling the optical phased array and processing the optical signal received by the laser receiving unit.

10. The lidar according to claim 9, wherein, The application also relates to a laser receiving unit and a signal processing unit; the laser receiving unit is used for receiving the optical signal of the laser reflected on the target object; and the signal processing unit is used for controlling the optical phased array and processing the optical signal received by the laser receiving unit.

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