Substrate processing apparatus

Abstract

The present application relates to a substrate processing apparatus, and more particularly to a substrate processing apparatus performing substrate processing by pressure change between high pressure and low pressure. The present application discloses a substrate processing apparatus, comprising: a process chamber (100) forming a through hole (150) and forming an internal space (S1); a substrate support part (200) on which a substrate (1) is placed; a gas supply part (400) for supplying a process gas used for substrate processing; an exhaust part (500) for discharging the process gas supplied through the gas supply part (400) to the outside; wherein the chamber body (110) is formed with an exhaust passage formed between the outer peripheral surface of the substrate support shaft (220) and the inner side surface of the through hole (150) to communicate with the exhaust part (500).

Description

Technical Field

[0001] The present invention relates to a substrate processing apparatus, and more particularly, to a substrate processing apparatus that performs substrate processing by voltage transformation between high and low voltage. Background Technology

[0002] A substrate processing apparatus is used to perform processing on substrates such as wafers, typically including etching, deposition, and heat treatment.

[0003] At this point, when a thin film is formed by deposition on a substrate, a process is required to remove impurities from the film and improve the film properties after the film is formed on the substrate.

[0004] In particular, with the advent of three-dimensional semiconductor devices, i.e. substrates with high aspect ratios, in order to meet the stepped coverage standard, the film deposition temperature is lowered or gases with high impurity content are necessarily used, thus making impurity removal more difficult.

[0005] Therefore, a substrate processing method and a substrate processing apparatus for performing the method are required, in which, after a film is formed on a substrate, the film properties can be improved by removing impurities present in the film without deterioration of the film properties.

[0006] In addition to the thin film on the substrate, there is also the problem of contamination of the deposited thin film due to trace impurities remaining inside the cavity. Therefore, it is necessary to remove impurities from the cavity of the substrate support portion, including the supporting substrate.

[0007] To address this issue, existing Korean patent application No. 10-2021-0045294A discloses a substrate processing method that repeatedly generates high-pressure and low-pressure environments to reduce defects on the substrate surface and inside the cavity, thereby improving thin film properties.

[0008] However, when the above-described substrate processing method is applied to existing substrate processing apparatuses, the processing space for processing the substrate is relatively large, thus making it impossible to achieve a fast pressure change rate.

[0009] In other words, existing substrate processing devices have the problem of being unable to repeatedly perform processes across a wide pressure range, from low pressure of 0.01 Torr to high pressure of 5 Bar, within a short period of time.

[0010] In particular, existing substrate processing apparatuses have the following problem: in order to achieve a rapid pressure change rate, an exhaust space connected to the processing space is essential, but because such an exhaust space increases the volume of the processing space, it is impossible to achieve a rapid pressure change rate. Summary of the Invention

[0011] (The problem to be solved)

[0012] In order to solve the problems described above, the object of the present invention is to provide a substrate processing apparatus that minimizes the exhaust space for discharging gas in the processing space to achieve a rapid pressure change rate.

[0013] (Solutions)

[0014] This invention is proposed to achieve the objectives described above. It discloses a substrate processing apparatus, comprising: a process chamber 100, including a chamber body 110 and a top cover 140, wherein the upper part of the chamber body 110 is open and a through hole 150 is formed on its lower surface; the top cover 140 is attached to the upper part of the chamber body 110 to form an internal space S1; and a substrate support portion 200, including a substrate support plate 210 and a substrate support shaft 220, wherein the substrate support plate 210 is disposed in the process chamber 100 and a substrate is placed on it. The substrate 1 has a substrate support shaft 220 that passes through the through hole 150 to support the substrate support plate 210; a gas supply section 400 supplies process gas for substrate processing; and an exhaust section 500 is formed in the lower part of the chamber body 110 and discharges the process gas supplied by the gas supply section 400 to the outside. The chamber body 110 has an exhaust channel formed between the outer peripheral surface of the substrate support shaft 220 and the inner surface of the through hole 150 to communicate with the exhaust section 500.

[0015] The process chamber 100 may include a mounting groove 130, which is configured to allow the substrate support 200 to be inserted into the bottom surface 120 of the chamber body 110, which includes the through hole 150.

[0016] The substrate processing apparatus includes an inner cover 300, which is movably disposed in the internal space S1. By lowering, a portion of the inner cover 300 is pressed against the bottom surface 120 adjacent to the mounting groove 130, thereby forming a sealed processing space S2 containing the substrate support 200. A gas supply unit 400 is disposed adjacent to the edge of the substrate support shaft 220 to supply process gas to the processing space S2.

[0017] The substrate processing apparatus may include an inner cover driving unit 600, which is disposed through the top cover 140 of the process chamber 100 to drive the inner cover 300 to move up and down.

[0018] The substrate processing apparatus may include a filling member 700, which is disposed between the substrate support portion 200 and the setting groove 130 to fill a portion of the space between the substrate support portion 200 and the setting groove 130, forming a setting groove exhaust channel S3 that connects the processing space S2 and the exhaust channel.

[0019] The substrate processing apparatus can form a setting groove exhaust channel S3, which is formed between the substrate support plate 210 and the setting groove 130 to connect the processing space S2 and the exhaust channel.

[0020] The exhaust section 500 may include: an exhaust body 510, which is disposed on at least a portion of the inner side of the through hole 150 to support the substrate support shaft 220, and is open at the top to form the exhaust space S4 communicating with the exhaust channel; and at least one exhaust port, formed on the side of the exhaust body 510, to discharge the process gas flowing into the exhaust space S4 to the outside.

[0021] (The effect of the invention)

[0022] The substrate processing apparatus of the present invention has a processing space connected to an exhaust space. Not only the volume of the processing space, but also the volume of the exhaust space connected to the processing space is a factor that determines the time required to adjust the pressure of the processing space. Therefore, by minimizing the volume of the exhaust space, the overall volume is reduced, thus having the advantage of improving the pressure change rate over a wide pressure range.

[0023] In addition, instead of forming a separate exhaust section that communicates with the processing space to discharge the gas from the processing space, the space forming the substrate support shaft is flexibly used as an exhaust section, so there is no need for an exhaust space, which has the advantage of being able to reduce the exhaust space.

[0024] As a result, the substrate processing apparatus of the present invention minimizes the exhaust space that is connected to the processing space to regulate the pressure of the processing space, thereby reducing the overall volume of the processing space and having the advantage of being able to achieve a rapid pressure change rate. Attached Figure Description

[0025] Figure 1 This is a cross-sectional view showing the substrate processing apparatus of the present invention.

[0026] Figure 2 This is an enlarged cross-sectional view of part A of the substrate processing apparatus of the present invention.

[0027] Figure 3 It shows through Figure 1 The graph shows the pressure change in the processing space of the substrate processing device.

[0028] (Explanation of reference numerals in the attached diagram)

[0029] 1: Substrate 100: Process Chamber

[0030] 200: Substrate support portion; 300: Inner cover portion

[0031] 400: Gas supply section; 500: Exhaust section

[0032] 600: Inner cover drive unit; 700: Filling component Detailed Implementation

[0033] The substrate processing apparatus of the present invention will now be described with reference to the accompanying drawings.

[0034] like Figure 1 As shown, the substrate processing apparatus of the present invention includes: a process chamber 100, including a chamber body 110 and a top cover 140, wherein the upper part of the chamber body 110 is open and a through hole 150 is formed on the lower surface, and the top cover 140 is attached to the upper part of the chamber body 110 to form an internal space S1; a substrate support portion 200, including a substrate support plate 210 and a substrate support shaft 220, wherein the substrate support plate 210 is disposed in the process chamber 100 and the substrate 1 is placed on it, and the substrate support shaft 220 is disposed through the through hole 150 to support the substrate support plate 210; a gas supply portion 400 for supplying process gas for substrate processing; and an exhaust portion 500 formed in the lower part of the chamber body 110 and discharging the process gas supplied by the gas supply portion 400 to the outside; wherein the chamber body 110 forms an exhaust channel, which is formed between the outer peripheral surface of the substrate support shaft 220 and the inner surface of the through hole 150 to communicate with the exhaust portion 500. In addition, the substrate processing apparatus of the present invention may also include an inner cover portion 300, which is disposed in the internal space S1 and partially attached to the process chamber 100, thereby forming a sealed processing space S2 in which the substrate support portion 200 is disposed.

[0035] In addition, the substrate processing apparatus of the present invention may also include an inner cover driving unit 600, which is disposed through the upper surface of the process chamber 100 to drive the inner cover 300 to move up and down.

[0036] In addition, the substrate processing apparatus of the present invention may include a filling member 700, which is disposed between the substrate support portion 200 and the lower surface of the process chamber 100.

[0037] Additionally, the substrate processing apparatus of the present invention may include a filling member 700 disposed between the substrate support portion 200 and the lower surface of the process chamber 100.

[0038] Here, substrate 1, which is the object of processing, can be understood to include all substrates, such as substrates used in display devices such as LCD, LED, and OLED, semiconductor substrates, solar cell substrates, and glass substrates.

[0039] The process chamber 100, which forms an internal space S1, can adopt various structures.

[0040] For example, the process chamber 100 may include a chamber body 110 and a top cover 140, the upper part of the chamber body 110 being open, and the top cover 140 covering the open upper part of the chamber body 110 to form a sealed internal space S1 together with the chamber body 110.

[0041] Additionally, the process chamber 100 may include a bottom surface 120 and a mounting groove 130. The bottom surface forms the bottom of the internal space S1, and the mounting groove 130 allows the substrate support portion 200 to be disposed on the bottom surface 120.

[0042] Additionally, a through hole 150 for providing the exhaust portion 500 (described later) may be formed on the lower surface of the process chamber 100.

[0043] In addition, the process chamber 100 may also include a gate valve, which is used to open and close a gate formed on one side of the chamber body 110 to allow the substrate 1 to enter and exit.

[0044] The main body 110 of the chamber is open at the top and can form a sealed internal space S1 together with the top cover 140 described later.

[0045] At this time, the chamber body 110 can be made of a metal material containing aluminum, or, as another example, of a quartz material, and can have a rectangular hexahedral shape, similar to the previously disclosed chambers.

[0046] The top cover 140 may be a structure that is attached to the upper side of the upper open chamber body 110 to form a sealed internal space S1 together with the chamber body 110.

[0047] At this time, the top cover 140 corresponds to the shape of the chamber body 110, and can be formed into a right-angled quadrilateral shape on a plane, and can be made of the same material as the chamber body 110.

[0048] In addition, the top cover 140 may have multiple through holes to pass through the inner cover drive part 600 described later, and the bottom surface is connected to the end of the bellows 630 described later, which can prevent various gases and foreign objects from leaking to the outside.

[0049] On the other hand, the top cover 140 structure can of course be omitted, and the chamber body 110 can be formed as an integral type that forms an internal space S1 inside.

[0050] The process chamber 100 may include a bottom surface 120 and a mounting groove 130. The lower inner surface of the bottom surface 120 forms the bottom of the internal space S1, and the mounting groove 130 is configured to allow the substrate support portion 200, described later, to be disposed on the bottom surface 120.

[0051] More specifically, such as Figure 1 As shown, a mounting groove 130 can be formed on the center side of the lower surface of the process chamber 100. The mounting groove 130 forms a step corresponding to the substrate support portion 200 described later. A bottom surface 120 can be formed at the edge of the mounting groove 130.

[0052] That is, a mounting groove 130 for mounting a substrate support 200 is formed on the lower inner surface of the process chamber 100. The mounting groove 130 forms a step, and the rest is defined as the bottom surface 120, which can be formed at a height higher than the mounting groove 130.

[0053] The gate valve, which serves as a gate formed on one side of the chamber body 110 for the entry and exit of the substrate 1, can be of various structures.

[0054] At this time, the gate valve is in close contact with or unclosed from the chamber body 110 by up-down driving and forward-backward driving, thereby closing or opening the gate. As another example, the gate can be closed or opened by a single drive in the diagonal direction. In this process, various previously disclosed driving methods can be applied, such as cylinder, cam, electromagnetic, etc.

[0055] The through hole 150 is a structure formed on the lower surface of the process chamber 100. More specifically, it is formed on the lower surface of the process chamber 100 and communicates with the processing space S2 described later, thereby allowing the provision of an exhaust section 500 for discharging gas from the processing space S2.

[0056] That is, the through hole 150 is formed on the lower surface of the process chamber 100 and communicates with the processing space S2 formed by the descent of the inner cover 300 (described later), and an exhaust section 500 may be provided therein.

[0057] On the other hand, the through hole 150 can pass through the substrate support shaft 220 in the substrate support portion 200 described later, thereby allowing the process gas in the processing space S2 to be discharged through the exhaust channel formed between the substrate support shaft 220 and the inner side of the through hole 150.

[0058] The substrate support 200 is a structure provided in the process chamber 100 and on which the substrate 1 is placed, and various structures can be adopted.

[0059] That is, the substrate 1 is placed on the substrate support portion 200 to support the substrate 1 being processed, and the substrate 1 can be fixed during the substrate processing.

[0060] In addition, the substrate support 200 has a heater inside, which can create a temperature environment for the processing space S2 for substrate processing.

[0061] For example, the substrate support portion 200 may include: a substrate support plate 210, which is formed in a circular shape on a plane and on which the substrate 1 is placed; and a substrate support shaft 220, which passes through the lower surface of the process chamber 100 and is connected to the substrate support plate 210.

[0062] Additionally, the substrate support 200 may include a heater, which is disposed within the substrate support plate 210 and heats the substrate 1 placed on the substrate support plate 210.

[0063] At this time, a heater is arranged inside the substrate support plate 210, which can create a process temperature for substrate processing in the processing space S2. The process temperature can be about 400°C to 550°C.

[0064] The substrate support shaft 220 serves as a through hole 150 through the process chamber 100 to connect with the substrate support plate 210, and various structures can be adopted.

[0065] The substrate support shaft 220 passes through the lower surface of the process chamber 100 and can be combined with the substrate support plate 210, and various wires for supplying power to the heater can be arranged inside it.

[0066] On the other hand, such as Figure 3 As shown, the substrate processing apparatus of the present invention is an apparatus for performing substrate processing that repeatedly changes and creates a pressure environment of high pressure and low pressure in a short period of time. More specifically, it is necessary to repeatedly change the pressure range from 5 Bar to 0.01 Torr at a pressure change rate of 1 Bar / s.

[0067] However, considering the large volume of the internal space S1 of the chamber body 110, the pressure change speed described above cannot be achieved. Therefore, it is necessary to minimize the volume of the processing space S2 used for substrate processing.

[0068] Therefore, the substrate processing apparatus of the present invention includes an inner cover portion 300, which is movably disposed in the internal space S1 and, by descending, partially comes into close contact with the process chamber 100 to form a sealed processing space S2 in which the substrate support portion 200 is located.

[0069] The inner cover 300 may be movably disposed in the internal space S1 and, by lowering a portion therein, closely adhere to the process chamber 100 to form a sealed processing space S2 containing the substrate support 200.

[0070] That is, the inner cover 300 is configured to move up and down on the upper side of the substrate support 200 in the internal space S1, and by descending it to be in close contact with at least a portion of the internal surface of the process chamber 100, a sealed processing space S2 can be formed between the inner cover 300 and the lower inner surface of the process chamber 100 as needed.

[0071] Accordingly, the substrate support 200 can be located within the processing space S2, and substrate processing can be performed on the substrate 1 placed in the substrate support 200 within the processing space S2 with minimized volume.

[0072] As an example, the inner cover 300 is pressed against the bottom surface 120 by a descending edge, thereby forming a sealed processing space S2 between the bottom surface of the inner cover 300 and the inner lower surface of the process chamber 100.

[0073] On the other hand, as another example, the inner cover 300 is in close contact with the inner side of the process chamber 100 by its descending edge, thereby naturally forming a sealed processing space S2.

[0074] The inner cover 300 forms a sealed processing space S2 by closely abutting the bottom surface 120 with its descending edge, and the substrate support 200 provided in the setting groove 130 can be located within the processing space S2.

[0075] That is, such as Figure 1 As shown, the inner cover 300 is closely attached to the bottom surface 120, which forms a step with the setting groove 130 and is located at a high position, through the descending edge, thereby forming a sealed processing space S2 between the bottom surface of the inner cover 300 and the setting groove 130.

[0076] At this time, a substrate support 200 is provided in the setting slot 130, and more specifically, a substrate support plate 210 and a filling member 700 are provided, thereby minimizing the volume of the processing space S2 while placing the substrate 1, which is to be processed, on it.

[0077] In order to minimize the volume of the processing space S2 in this process, the groove 130 can be formed in a shape corresponding to the substrate support 200 of the processing space S2. More specifically, corresponding to the circular substrate support plate 210, it can be formed in a groove with a cylindrical shape.

[0078] That is, in order to minimize the remaining space in the setting space formed by the setting groove 130, except for the space for the setting substrate support plate 210 and the filling member 700, the setting groove 130 can be formed into a shape corresponding to the shape of the substrate support plate 210.

[0079] To prevent interference between the substrate 1 placed on the substrate support plate 210 and the inner cover 300 during the process, the height of the bottom surface 120 may be higher than the substrate 1 placed on the substrate support plate 200.

[0080] On the other hand, the greater the distance between the substrate 1 placed in the substrate support 200 and the bottom surface of the inner cover 300, the larger the volume of the processing space S2 will be. Therefore, the height of the bottom surface 120 can be set to minimize the distance between the substrate 1 and the inner cover 300 while preventing interference between them.

[0081] The inner cover 300 can be a structure that moves up and down via the inner cover drive 600, and various structures can be adopted.

[0082] The inner cover 300 can be a structure that moves up and down within the internal space via the inner cover drive 600.

[0083] At this time, the inner cover portion 300 can be formed on the plane to cover the setting groove 130 and the edge corresponds to a part of the bottom surface 120, and the edge of the inner cover portion 300 is in close contact with the bottom surface 120, thereby forming a sealed processing space S2 between the inner cover portion 300 and the setting groove 130.

[0084] On the other hand, as another example, the edge of the inner cover 300 may be close to the inner side of the process chamber 100 to form a processing space S2.

[0085] In addition, in order to effectively achieve and maintain the process temperature within the sealed processing space S2 formed by the up-and-down movement of the inner cover 300, the inner cover 300 can be formed of a material with excellent heat insulation effect, which can prevent the processing space S2 from losing temperature to the internal space.

[0086] The sealing part 900 is a structure disposed on at least one of the bottom surface 120 of the inner cover part 300 or the process chamber 100, and can be disposed in a position corresponding to the bottom surface 120 of the process chamber 100 being in close contact with the inner cover part 300.

[0087] That is, when the edge of the inner cover 300 contacts the bottom surface 120 to form a sealed processing space S2, the sealing part 900 is arranged along the edge in the bottom surface of the inner cover 300 and can contact the area between the edge of the inner cover 300 and the bottom surface 120.

[0088] Thus, the sealing part 900 can guide the formation of a sealed processing space S2 and prevent process gases and the like in the processing space S2 from leaking to the outside of the non-processing space S1 and the like.

[0089] For example, the sealing portion 900 may include: a first sealing member 910 disposed along an edge in the bottom surface of the inner cover portion 300; and a second sealing member 920 disposed at a position spaced apart from the first sealing member 910 by a predetermined distance.

[0090] At this time, the first sealing member 910 and the second sealing member 920, as O-rings of the type disclosed previously, are arranged side by side along the edge of the bottom surface of the inner cover portion 300, spaced apart by a predetermined distance.

[0091] That is, the first sealing component 910 and the second sealing component 920 perform a double seal on the processing space S2, thereby preventing process gases and the like from leaking from the processing space S2 to the outside.

[0092] On the other hand, the sealing part 900 can be inserted into the insertion groove provided on the bottom surface 120, and can be tightly attached to or separated from the inner cover part 300 as the inner cover part 300 moves up and down.

[0093] As another example, the sealing part 900 can of course also be configured on the bottom surface of the inner cover part 300.

[0094] The gas supply unit 400 can be configured to communicate with the processing space S2 to supply process gas to the processing space S2, and various structures can be adopted.

[0095] For example, the gas supply unit 400 may include: a gas supply nozzle 410 exposed in the processing space S2 to supply process gas into the processing space S2; and a gas supply channel 420 penetrating the process chamber 100, connected to the gas supply nozzle 410, and conveying the process gas supplied through the gas supply nozzle 410.

[0096] At this time, as Figure 1 As shown, the gas supply unit 400 can be disposed adjacent to the substrate support unit 200 at the edge of the mounting groove 130, thereby supplying process gas to the processing space S2.

[0097] On the other hand, the processing space S2 can be formed between a portion of the bottom surface of the inner cover 300 and the upper surface of the gas supply section 400 and the substrate support section 200.

[0098] The gas supply nozzle 410, as a structure exposed in the processing space S2 to supply process gas into the processing space S2, can adopt various structures.

[0099] For example, the gas supply nozzle 410 is disposed adjacent to the side of the substrate support plate 210 at the edge of the setting groove 130, and sprays process gas upward or onto the side of the substrate support plate 210, thereby supplying process gas into the processing space S2.

[0100] At this time, the gas supply nozzle 410 is disposed at the edge of the setting groove 130, surrounding the substrate support plate 210, and can spray process gas from at least a portion of the side surface of the substrate support plate 210 on the plane.

[0101] As an example, the gas supply nozzle 410 can spray process gas from the edge of the setting slot 130 toward the bottom surface of the inner cover 310, and can supply process gas in order to adjust the pressure of the processing space S2 to the desired pressure in a short time by minimizing the volume of the processing space S2.

[0102] The gas supply channel 420 passes through the lower surface of the process chamber 100, can be connected to an external process gas storage unit, and receives process gas, and can supply process gas to the gas supply nozzle 410.

[0103] At this time, the air supply channel 420 may be a pipe that passes through the lower surface of the process chamber 100. As another example, the air supply channel 420 may be formed by machining the lower surface of the process chamber 100.

[0104] The inner cover driving part 600 is provided on the upper surface of the through process chamber 100 to drive the inner cover part 300 to move up and down, and various structures can be adopted.

[0105] For example, the inner cover drive unit 600 may include: a plurality of drive rods 610, one end of which passes through the upper surface of the process chamber 100 to be coupled to the inner cover 300; and at least one drive source 620, connected to the other end of the plurality of drive rods 610, to drive the drive rods 610 in the up and down direction.

[0106] Additionally, the inner cover drive unit 600 may include: a fixed support unit 640 disposed on the upper surface of the process chamber 100, i.e., the top cover 140, which fixes and supports the end of the drive rod 610; and a first corrugated pipe 630 disposed between the upper surface of the process chamber 100 and the inner cover 300, which surrounds the drive rod 610.

[0107] The drive rod 610 may have one end penetrating through the upper surface of the process chamber 100 and being connected to the inner cover 300, while the other end is connected to the drive source 620 outside the process chamber 100. The drive source 620 moves the rod up and down, thereby driving the structure of the inner cover 300 up and down.

[0108] At this time, instead of forming multiple drive rods 610, two or four drive rods 610 can be formed and attached to the upper part of the inner cover 300 at predetermined intervals, thereby guiding the inner cover 300 to move up and down while maintaining a horizontal position.

[0109] The drive source 620 is a structure of the drive rod 610 that is set above and below the fixed support 640 for driving and can adopt various structures.

[0110] For the drive source 620, any structure can be applied as long as it is a previously disclosed drive method. For example, it can be applied to various drive methods such as cylinder drive, electromagnetic drive, screw motor drive, cam drive, etc.

[0111] The bellows 630 may be a structure that surrounds the drive rod 610 and is disposed between the upper surface of the process chamber 100 and the inner cover 300 to prevent gas or the like in the internal space S1 from leaking through the upper surface of the process chamber 100.

[0112] At this point, the bellows 630 can be positioned by moving the inner cover 300 up and down.

[0113] The exhaust section 500 is provided in the through hole 150 as a structure surrounding the substrate support shaft 220 and discharging process gases to the outside. Various structures can be adopted.

[0114] For example, such as Figure 1 As shown, the exhaust section 500 may include: an exhaust body 510, which is disposed on at least a portion of the inner side of the through hole 150 to support the substrate support shaft 220 and has an open upper portion to form the exhaust space S4 communicating with the exhaust channel; and at least one exhaust port, which is formed on the side of the exhaust body 510 to discharge the process gas flowing into the exhaust space S4 to the outside.

[0115] That is, the exhaust section 500 is provided in the through hole 150 of the process chamber 100, and an exhaust space S4 communicating with the processing space S2 can be formed inside it.

[0116] At this time, the exhaust body 510 is provided in the through hole 150 of the process chamber 100 surrounding the substrate support shaft 220, and can communicate with the processing space S2 formed by the descent of the inner cover 300 by providing the slot exhaust channel S3.

[0117] In addition, the exhaust body 510 may form a lower through hole 511 to pass through various wires, which are connected to the heater provided on the substrate support plate 210 via the substrate support shaft 220.

[0118] The exhaust body 510 may have different exhaust ports depending on the pressure state of the processing space S2, and may have a high-pressure exhaust port 520 and a low-pressure exhaust port 530. The high-pressure exhaust port 520 is connected to an external exhaust device to discharge high-pressure process gas when venting high-pressure gas in the processing space S2 that is above atmospheric pressure. The low-pressure exhaust port 530 is connected to an external vacuum pump to discharge low-pressure process gas when venting low-pressure gas in the processing space S2 that is below atmospheric pressure.

[0119] On the other hand, as described above, when the substrate support 200 is provided in the setting groove 130, a space is formed between the substrate support 200, more specifically, the substrate support plate 210 and the setting groove 130, increasing the volume of the setting groove exhaust channel S3, which may be a factor in increasing the volume of the processing space S2.

[0120] To improve this problem, when the board support 200 is simply in contact with the setting groove 130, the following problems exist: heat supplied by the heater in the board support 200 is absorbed by the process chamber 100 through the lower surface of the process chamber 100, i.e. the setting groove 130, and heat loss occurs. Furthermore, it is difficult to set and maintain the process temperature in the processing space S2, which reduces efficiency.

[0121] To improve this problem, the filling member 700 of the present invention is a structure provided between the substrate support 200 and the lower surface of the process chamber 100, and can adopt various structures.

[0122] For example, the filling component 700 can be disposed in the setting groove 130. When disposed in the setting groove 130, the substrate support plate 210 is disposed on the upper side of the filling component 700, minimizing the remaining volume between the setting groove 130 and the substrate support plate 210, thereby reducing the volume of the setting groove exhaust channel S3 and the processing space S2.

[0123] Therefore, the filling member 700 may be formed in a shape corresponding to the space between the setting groove 130 and the substrate support 200 in order to minimize the processing space S2.

[0124] More specifically, the filling member 700 may be formed in a shape corresponding to the space between the setting groove 130, which is circular in the plane and has a step with a predetermined depth from the bottom surface 120, and the substrate support plate 210, which is circular in the plane.

[0125] On the other hand, the filling component 700 can be formed of at least one material selected from quartz, ceramic and SUS.

[0126] In addition, the filling member 700 not only occupies the space between the setting groove 130 and the substrate support 200 simply to minimize the volume of the processing space S2, but also minimizes the heat loss transmitted to the substrate 1 through the substrate support 200 by heat insulation, and further reflects the lost heat back to the processing space S2 by heat reflection.

[0127] On the other hand, in order to form a groove venting channel S3 between the side and bottom surfaces of the substrate support 200, the filling member 700 may be disposed adjacent to at least one of the side and bottom surfaces of the substrate support plate 210 and spaced apart from the substrate support plate 210, and may be disposed to surround the bottom and side surfaces of the substrate support plate 210.

[0128] The exhaust channel S3 for discharging process gases according to the present invention will be described in detail below with reference to the accompanying drawings.

[0129] The set slot exhaust channel S3 is disposed between the substrate support 200 and the lower inner surface of the process chamber 10 in communication with the exhaust section 500.

[0130] That is, the set slot exhaust channel S3 can be formed between the side and bottom surfaces of the substrate support plate 210 in the substrate support portion 200 and the inner lower surface of the process chamber 100. The set slot exhaust channel S3 formed at this time is connected to the through hole 150 of the process chamber 100 of the set exhaust portion 500, and can transmit the process gas to the exhaust space S4 of the exhaust portion 500.

[0131] On the other hand, more specifically, the exhaust channel S3 of the setting groove can be formed along the side and bottom surfaces of the substrate support plate 210 of the setting groove 130 and the inner wall of the setting groove 130.

[0132] Additionally, as another example, such as Figure 2 As shown, a filling member 700 is provided in the setting groove 130, and the exhaust channel S3 of the setting groove can be formed between the side and bottom surfaces of the substrate support plate 210 and the facing surfaces of the filling member 700.

[0133] At this time, in order to minimize the volume of the processing space S2 while performing smooth exhaust, the volume of the set slot exhaust channel S3 can be formed at a preset level, and the spacing between the filling member 700 and the substrate support plate 210 can be adjusted for this purpose.

[0134] On the other hand, such as Figure 2 As shown, the exhaust channel S3 of the set slot can be connected to the exhaust space S4 at the junction of the end of the filling member 700 and the substrate support shaft 220 and the substrate support plate 210, and the movement direction can be changed from the horizontal direction to the vertical direction.

[0135] At this time, in order to maintain the exhaust flow of the discharged process gas while preventing backflow, a guide surface 230 for guiding the flow of the discharged gas can be formed at the joint position between the substrate support shaft 220 and the substrate support plate 210. At this time, the guide surface 230 can be formed at an angle corresponding to the angle that converts the horizontal flow direction of the discharged gas into the lower vertical direction.

[0136] In addition, the end boundary portion 710 of the filling member 700 facing the guide surface 230 may also be formed inclined from the horizontal direction to the vertical direction accordingly.

[0137] On the other hand, various embodiments can be applied in order to guide the exhaust gas through the provided slot exhaust channel S3 to move smoothly toward the slit within the exhaust section 500.

[0138] As an example, such as Figure 2 As shown, the first horizontal distance D1 between the end of the substrate support shaft 220 side of the filling member 700 and the substrate support shaft 220 is smaller than the second horizontal distance D2 between the inner side of the exhaust part 500 and the substrate support shaft 220, thereby guiding the exhaust gas to flow smoothly from the end of the filling member 700 to the exhaust space S4 side.

[0139] The above is only a partial description of the preferred embodiments that can be implemented by the present invention. As is well known, the scope of the present invention should not be limited to the embodiments. The technical ideas and fundamental technical ideas of the present invention described above are all included within the scope of the present invention.

Claims

1. A substrate processing apparatus, characterized in that, include: A process chamber (100) includes a chamber body (110) and a top cover (140). The upper part of the chamber body (110) is open and a through hole (150) is formed on the lower surface. The top cover (140) is attached to the upper part of the chamber body (110) to form an internal space (S1). The substrate support portion (200) includes a substrate support plate (210) and a substrate support shaft (220). The substrate support plate (210) is disposed in the process chamber (100) and a substrate (1) is placed on it. The substrate support shaft (220) is disposed through the through hole (150) to support the substrate support plate (210). Gas supply unit (400) supplies process gases for substrate processing; An exhaust section (500) is formed in the lower part of the chamber body (110) and discharges the process gas supplied by the gas supply section (400) to the outside. The chamber body (110) has an exhaust channel formed between the outer peripheral surface of the substrate support shaft (220) and the inner surface of the through hole (150) to communicate with the exhaust portion (500). The process chamber (100) includes a mounting slot (130). The mounting groove (130) is formed to allow the substrate support (200) to be inserted into the bottom surface (120) of the chamber body (110) including the through hole (150).

2. The substrate processing apparatus according to claim 1, characterized in that, include: The inner cover (300) is movably disposed in the internal space (S1), and by descending, a portion of it is closely attached to the bottom surface (120) adjacent to the set groove (130), thereby forming a sealed processing space (S2) with the substrate support (200) inside. The gas supply unit (400) is disposed adjacent to the edge of the substrate support shaft (220) to supply the process gas to the processing space (S2).

3. The substrate processing apparatus according to claim 2, characterized in that, include: An inner cover drive unit (600) is provided through the top cover (140) of the process chamber (100) to drive the inner cover unit (300) to move up and down.

4. The substrate processing apparatus according to claim 2, characterized in that, include: A filling member (700) is disposed between the substrate support (200) and the setting groove (130) to fill a portion of the space between the substrate support (200) and the setting groove (130), forming a setting groove exhaust channel (S3) connecting the processing space (S2) and the exhaust channel.

5. The substrate processing apparatus according to claim 2, characterized in that, An exhaust channel (S3) is formed between the substrate support plate (210) and the set groove (130) to connect the processing space (S2) and the exhaust channel.

6. The substrate processing apparatus according to any one of claims 1 to 5, characterized in that, The exhaust section (500) includes: An exhaust body (510) is provided on at least a portion of the inner side of the through hole (150) to support the substrate support shaft (220), and is open at the top to form an exhaust space (S4) communicating with the exhaust channel; at least one exhaust port is formed on the side of the exhaust body (510) to discharge the process gas flowing into the exhaust space (S4) to the outside.

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