Photovoltaic energy supply device

Abstract

The application provides a photovoltaic energy supply device. The photovoltaic energy supply device is provided with a power generation part on one side, which generates electric energy through photovoltaic power generation; and is provided with an energy storage part on the other side, which can be used for storing electric energy. The power generation part and the energy storage part can be interconnected together through an electric energy control part, so as to realize direct charging, storage and discharging use of the power supply. The power generation part is equivalent to a switching circuit, in a non-output state, the electric energy generated by the power generation part is guided by the electric energy control part to the energy storage part for charging; in an output state, the electric energy control part can selectively supply power to a load output end from the power generation part or the energy storage part, or simultaneously supply power to the load output end from the power generation part and the energy storage part.

Description

Technical Field

[0001] This invention relates to the field of photovoltaic cell technology, and more specifically, to a photovoltaic energy supply device. Background Technology

[0002] Nanowires can be defined as one-dimensional structures with a transverse dimension limited to less than 100 nanometers (with no longitudinal limitation). Typical nanowires have an aspect ratio greater than 1000, hence they are often referred to as one-dimensional materials. Depending on their constituent materials, nanowires can be classified into different types, including metallic nanowires, semiconductor nanowires, and insulator nanowires. Nanowires are all produced in laboratories and, as of 2014, have not been found in nature. Nanowires can be prepared by suspension methods, deposition methods, or elemental synthesis methods.

[0003] Current research has revealed promising applications for nanowires in both photovoltaic (PV) power generation and energy storage. In PV, the Shockley-Quisser limit, a typical limit to solar cell conversion efficiency, has long been a bottleneck. Nanowires could potentially raise this limit by several percentage points, significantly impacting the development of solar cells, nanowire-based solar energy utilization, and global energy development. Furthermore, in energy storage, nanowire applications can also greatly improve energy storage efficiency and capacity.

[0004] Currently, if you want to use solar panels directly for power, you usually need to use them in conjunction with additional energy storage devices. However, this method can limit the application of solar panels in certain situations. Summary of the Invention

[0005] The main objective of this invention is to provide a photovoltaic energy supply device with a more flexible power supply method.

[0006] To achieve the above objectives, according to one aspect of the present invention, a photovoltaic energy supply device is provided, comprising: a power generation component, the power generation component including: a first metal electrode layer, the top of which has a first nanopore structure formed; a photovoltaic semiconductor nanowire structure layer formed on the top of the first metal electrode layer; a current collector electrode layer disposed on the top of the photovoltaic semiconductor nanowire structure layer; an energy storage component, the energy storage component including: a second metal electrode layer connected in parallel with the first metal electrode layer, the bottom of which has a second nanopore structure formed; a cathode nanowire structure layer formed on the bottom of the second metal electrode layer; an anode structure layer disposed at intervals on the bottom of the cathode nanowire structure layer; and an energy control component, the energy control component being electrically connected to the current collector electrode layer, the anode structure layer, the first metal electrode layer and / or the second metal electrode layer respectively, and the energy control component further having a load output terminal; in a non-output state, the energy control component controls the power generation component to charge the energy storage component; in an output state, the energy control component draws electrical energy from the power generation component and / or the energy storage component to supply power to the load output terminal.

[0007] Furthermore, the first metal electrode layer and the second metal electrode layer are two sides of the same metal electrode, or the first metal electrode layer and the second metal electrode layer are two sides of two different metals.

[0008] Furthermore, the energy storage component also includes an electrolyte filling layer, which is disposed between the cathode nanowire structure layer and the anode structure layer.

[0009] Furthermore, the electrolyte filling layer can be made of organic, inorganic, liquid, or solid materials.

[0010] Furthermore, the first metal electrode layer is a valve metal material, and the first nanoporous structure is formed by anodic oxidation in an acid solution; and / or the second metal electrode layer is a valve metal material, and the second nanoporous structure is formed by anodic oxidation in an acid solution.

[0011] Furthermore, the valve metal material is Al, Ti, W, Ta, Hf, Nb, or Zr.

[0012] Furthermore, the photovoltaic semiconductor nanowire structure layer includes a first nanowire extending from the first nanopore structure and a photovoltaic semiconductor material disposed on the first nanopore structure and formed around the first nanowire.

[0013] Furthermore, the semiconductor material includes an N-type semiconductor structure layer at the bottom and a P-type semiconductor structure layer at the top.

[0014] Furthermore, the photovoltaic semiconductor nanowire structure layer is obtained through physical vapor deposition, chemical vapor deposition, or plasma-enhanced chemical vapor deposition.

[0015] Furthermore, the current collector electrode layer is a transparent conductive electrode.

[0016] Furthermore, the cathode nanowire structure layer includes second nanowires extending from the second nanopore structure.

[0017] Furthermore, the cathode nanowire structure layer is deposited at the bottom of the second metal electrode layer by chemical vapor deposition or electrodeposition.

[0018] The present invention employs a power generation component on one side to generate electricity through photovoltaic power generation; and an energy storage component on the other side for storing electrical energy. The power generation component and the energy storage component can be interconnected via an energy control component, enabling direct charging, storage, and discharging of the power source. The power generation component functions as a switching circuit; in the non-output state, the energy control component guides the electrical energy generated by the power generation component to the energy storage component for charging; in the output state, the energy control component can selectively supply power to the load output terminal from either the power generation component or the energy storage component, or simultaneously from both the power generation component and the energy storage component.

[0019] In addition to the objectives, features, and advantages described above, the present invention has other objectives, features, and advantages. The invention will now be described in further detail with reference to the figures. Attached Figure Description

[0020] The accompanying drawings, which form part of this specification, are used to provide a further understanding of the invention. The illustrative embodiments of the invention and their descriptions are used to explain the invention and do not constitute an undue limitation of the invention. In the drawings:

[0021] Figure 1 A schematic diagram illustrating the structural principle of Embodiment 1 of the photovoltaic energy supply device according to the present invention is shown;

[0022] Figure 2 A schematic diagram illustrating the structural principle of Embodiment 2 of the photovoltaic energy supply device according to the present invention is shown;

[0023] Figure 3 It shows Figure 1 A schematic diagram of the structural principle of the metal electrode in a photovoltaic energy supply device;

[0024] Figure 4 It shows Figure 2 A schematic diagram of the manufacturing process of the power generation components of a photovoltaic energy supply device;

[0025] Figure 5 It shows Figure 2 A schematic diagram of the manufacturing process of energy storage components for photovoltaic energy supply devices.

[0026] The above figures include the following reference numerals:

[0027] 10. Power generation components; 20. Energy storage components; 30. Power control components; 31. Load output terminal. Detailed Implementation

[0028] It should be noted that, unless otherwise specified, the embodiments and features described in the present invention can be combined with each other. The present invention will now be described in detail with reference to the accompanying drawings and embodiments.

[0029] To enable those skilled in the art to better understand the present invention, the technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings of the embodiments of the present invention. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort should fall within the scope of protection of the present invention.

[0030] It should be noted that the terms "first," "second," etc., in the specification, claims, and accompanying drawings of this invention are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that such terms can be used interchangeably where appropriate for the embodiments of the invention described herein. Furthermore, the terms "comprising" and "having," and any variations thereof, are intended to cover non-exclusive inclusion; for example, a process, method, system, product, or apparatus that comprises a series of steps or units is not necessarily limited to those steps or units explicitly listed, but may include other steps or units not explicitly listed or inherent to such processes, methods, products, or apparatus.

[0031] It should be noted that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit the exemplary embodiments according to this application. As used herein, the singular form is intended to include the plural form as well, unless the context clearly indicates otherwise. Furthermore, it should be understood that when the terms "comprising" and / or "including" are used in this specification, they indicate the presence of features, steps, operations, devices, components, and / or combinations thereof.

[0032] Figure 1Embodiment 1 of the photovoltaic energy supply device of the present invention is shown. The photovoltaic energy supply device includes a power generation component 10, an energy storage component 20, and an energy control component 30. The power generation component 10 includes a first metal electrode layer 11, a photovoltaic semiconductor nanowire structure layer, and a current collector electrode layer 15. A first nanopore structure 111 is formed on the top of the first metal electrode layer 11, the photovoltaic semiconductor nanowire structure layer is formed on the top of the first metal electrode layer 11, and the current collector electrode layer 15 is disposed on the top of the photovoltaic semiconductor nanowire structure layer. The energy storage component 20 includes a second metal electrode layer 21, a cathode nanowire structure layer, and an anode structure layer 23. The second metal electrode layer 21 is connected in parallel with the first metal electrode layer 11, a second nanopore structure 211 is formed on the bottom of the second metal electrode layer 21, the cathode nanowire structure layer is formed on the bottom of the second metal electrode layer 21, and the anode structure layer 23 is disposed at intervals on the bottom of the cathode nanowire structure layer. The power control component 30 is electrically connected to the current collector electrode layer 15, the anode structure layer 23, the first metal electrode layer 11, and / or the second metal electrode layer 21, respectively. The power control component 30 also has a load output terminal 31. In the non-output state, the power control component 30 controls the power generation component 10 to charge the energy storage component 20; in the output state, the power control component 30 draws electrical energy from the power generation component 10 and / or the energy storage component 20 to supply power to the load output terminal 31.

[0033] In the technical solution of Embodiment 1, an energy device is integrated using a metal plate with nanoporous structures on both sides. A power generation component 10 is formed on one side to generate electricity through photovoltaic power generation; an energy storage component 20 is formed on the other side for storing electrical energy. The power generation component 10 and the energy storage component 20 can be interconnected through an energy control component 30 to realize direct charging, storage, and discharging of the power source. The power generation component 10 is essentially a switching circuit. In the non-output state, the energy control component 30 guides the electrical energy generated by the power generation component 10 to be delivered to the energy storage component 20 for charging. In the output state, the energy control component 30 can selectively supply power to the load output terminal 31 from either the power generation component 10 or the energy storage component 20, or simultaneously supply power to the load output terminal 31 from both the power generation component 10 and the energy storage component 20.

[0034] like Figure 1 and Figure 3 As shown, as an optional implementation, in the technical solution of Embodiment 1, the first metal electrode layer 11 and the second metal electrode layer 21 are two sides of the same metal electrode. In this embodiment, a first nanoporous structure 111 of the first metal electrode layer 11 and a second nanoporous structure 211 of the second metal electrode layer 21 are formed on the two sides of the same metal electrode, respectively. Specifically, as... Figure 3As shown, a sandwich structure of a double-sided nanoporous metal oxide plate is formed on the same metal electrode, with the middle part being a metal that can serve as a common electrode. Magnified scanning electron microscope images show vertical nanochannels in the oxide layer.

[0035] like Figure 5 As shown, in a more preferred embodiment, the energy storage component 20 further includes an electrolyte filling layer 24, which is disposed between the cathode nanowire structure layer and the anode structure layer 23. The addition of the electrolyte filling layer 24 can increase the energy storage capacity of the energy storage component 20. Specifically, the electrolyte filling layer 24 can be disposed between the cathode nanowire structure layer and the anode structure layer 23 through encapsulation.

[0036] Optionally, the electrolyte filling layer 24 can be an organic material; alternatively, the electrolyte filling layer 24 can also be an inorganic material. Optionally, the electrolyte filling layer 24 can be a liquid material; alternatively, the electrolyte filling layer 24 can also be a solid material.

[0037] As an optional implementation, in the technical solution of Example 1, the structure of the anode structure layer 23 is as follows: carbon nanotubes, activated carbon, lithium-based oxides, etc. are disposed on the electrode substrate. The electrode substrate can be stainless steel, plastic, glass, copper sheet, aluminum sheet, etc.

[0038] As a preferred embodiment, in the technical solution of Example 1, the first metal electrode layer 11 is a valve metal material, and the first nanoporous structure 111 is formed by anodic oxidation in an acid solution. More preferably, the second metal electrode layer 21 is also a valve metal material, and the second nanoporous structure 211 is formed by anodic oxidation in an acid solution.

[0039] Optionally, the valve metal material can be Al, Ti, W, Ta, Hf, Nb, or Zr. For example, using Al results in Al₂O₃, and using Ti results in TiO₂. The metal oxides of these types of valve metals can be fabricated into nanoporous structures with 3D channels.

[0040] like Figure 4 As shown, in the technical solution of Embodiment 1, the photovoltaic semiconductor nanowire structure layer includes a first nanowire 12 extending from the first nanopore structure 111 and a photovoltaic semiconductor material disposed on the first nanopore structure 111 and formed around the first nanowire 12. The photovoltaic semiconductor material is used to generate electrical energy through photovoltaic effects, and the first nanowire 12 is used to enhance the photovoltaic effect. Optionally, the semiconductor material includes an N-type semiconductor structure layer 13 located at the bottom and a P-type semiconductor structure layer 14 located at the top.

[0041] In the technical solution of Example 1, the photovoltaic semiconductor nanowire structure layer can be obtained through physical vapor deposition, chemical vapor deposition, or plasma-enhanced chemical vapor deposition. Specifically, single-crystal structures can be obtained through the above-mentioned deposition methods, thereby improving photovoltaic efficiency.

[0042] Specifically, such as Figure 4 As shown, the manufacturing method of the power generation component 10 includes steps a1, b1, c1, d1, and e1. In step a1, a first nanoporous structure 111 is first formed on the first metal electrode layer 11 by anodizing. In step b1, a first nanowire 12 is grown in the second nanoporous structure 111 using processes such as physical vapor deposition, chemical vapor deposition, or plasma-enhanced chemical vapor deposition. In step c1, a portion of the first nanoporous structure 111 is etched away using etching technology. In step d1, an N-type semiconductor structure layer 13 is first deposited, followed by a P-type semiconductor structure layer 14, and a PN junction interface is formed between the N-type semiconductor structure layer 13 and the P-type semiconductor structure layer 14. Finally, in step e1, a current collector electrode layer 15 is disposed on top of the P-type semiconductor structure layer.

[0043] Specifically, the aforementioned PN junction interface can be an N-Si junction interface, a P-Si junction interface, an N-CdS junction interface, or a P-CdTe junction interface.

[0044] In the embodiment of the N-Si junction interface, the N-containing semiconductor is a P-type semiconductor structure layer, and the Si-containing semiconductor is an N-type semiconductor nanowire structure layer.

[0045] In the implementation of the P-Si junction interface, the P-containing semiconductor is a P-type semiconductor structure layer, and the Si-containing semiconductor is an N-type semiconductor nanowire structure layer.

[0046] In the embodiment of the N-CdS junction interface, the N-containing semiconductor is a P-type semiconductor structure layer, and the CdS-containing semiconductor is an N-type semiconductor nanowire structure layer.

[0047] In the implementation of the P-CdTe junction interface, the P-containing semiconductor is a P-type semiconductor structure layer, and the CdTe-containing semiconductor is an N-type semiconductor nanowire structure layer.

[0048] In a more preferred embodiment, in the technical solution of Example 1, the current collector layer 15 is a transparent conductive electrode. Optionally, the transparent conductive electrode can be ITO, FTO, etc., and can be formed on top of the P-type semiconductor structure layer by deposition.

[0049] like Figure 5As shown, in the technical solution of Embodiment 1, the cathode nanowire structure layer includes a second nanowire 22 extending from the second nanopore structure 211. The second nanowire 22 mainly plays the role of enhancing the energy storage capacity.

[0050] As a more alternative implementation, in the technical solution of Example 1, the cathode nanowire structure layer is deposited at the bottom of the second metal electrode layer 21 by chemical vapor deposition or electrodeposition.

[0051] Specifically, such as Figure 5 As shown, the manufacturing method of the energy storage component 20 includes steps a2, b2, c2, d2, and e2. In step a2, a second nanoporous structure 211 is first formed on the second metal electrode layer 21 by anodic oxidation. In step b2, a second nanowire 22 is grown in the second nanoporous structure 211 by chemical vapor deposition or electrodeposition. In step c2, a portion of the second nanoporous structure 211 is etched away using etching technology. In step d2, an anode structure layer 23 is installed. In step e2, an electrolyte filling layer 24 is filled.

[0052] Optionally, in the technical solution of Embodiment 1, the first nanowire 12 and the second nanowire 22 can be metal nanowires or semiconductor nanowires.

[0053] like Figure 2 , Figure 4 and Figure 5 As shown, as another optional implementation, in the technical solution of Embodiment 2, the first metal electrode layer 11 and the second metal electrode layer 21 are two sides of two metals. That is, the first metal electrode layer 11 is the top surface of one metal, on which the first nanopore structure 111 is formed, and the second metal electrode layer 21 is the bottom surface of the other metal, on which the second nanopore structure 211 is formed. Apart from this, the technical solution of Embodiment 2 is the same as the technical solution of Embodiment 1 in terms of implementation principle and the technical problem solved.

[0054] Unless otherwise specifically stated, the relative arrangement, numerical expressions, and values ​​of the components and steps set forth in these embodiments do not limit the scope of the invention. It should also be understood that, for ease of description, the dimensions of the various parts shown in the drawings are not drawn to actual scale. Techniques, methods, and devices known to those skilled in the art may not be discussed in detail, but where appropriate, such techniques, methods, and devices should be considered part of the specification. In all examples shown and discussed herein, any specific values ​​should be interpreted as merely exemplary and not as limitations. Therefore, other examples of exemplary embodiments may have different values. It should be noted that similar reference numerals and letters in the following figures denote similar items; therefore, once an item is defined in one figure, it need not be further discussed in subsequent figures.

[0055] For ease of description, spatial relative terms such as "above," "on top of," "on the upper surface of," "above," etc., are used herein to describe the spatial positional relationship of a device or feature as shown in the figures to other devices or features. It should be understood that spatial relative terms are intended to encompass different orientations in use or operation beyond the orientation of the device as described in the figures. For example, if the device in the figures were inverted, a device described as "above" or "on top of" other devices or structures would subsequently be positioned as "below" or "under" other devices or structures. Thus, the exemplary term "above" can include both "above" and "below." The device may also be positioned in other different ways (rotated 90 degrees or in other orientations), and the spatial relative descriptions used herein will be interpreted accordingly.

[0056] In the description of this invention, it should be understood that the orientation or positional relationship indicated by directional terms such as "front, back, up, down, left, right", "horizontal, vertical, horizontal" and "top, bottom" is generally based on the orientation or positional relationship shown in the accompanying drawings, and is only for the convenience of describing this invention and simplifying the description. Unless otherwise stated, these directional terms do not indicate or imply that the device or element referred to must have a specific orientation or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation on the scope of protection of this invention; the directional terms "inner" and "outer" refer to the inner and outer contours relative to the outline of each component itself.

[0057] The above description is merely a preferred embodiment of the present invention and is not intended to limit the invention. Various modifications and variations can be made to the present invention by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the scope of protection of the present invention.

Claims

1. A photovoltaic energy supply device, characterized in that, The application relates to a power generation and storage device. The power generation device (10) comprises: a first metal electrode layer (11) having a first nanopore structure (111) formed on the top of the first metal electrode layer (11); a photovoltaic semiconductor nanowire structure layer formed on the top of the first metal electrode layer (11), the photovoltaic semiconductor nanowire structure layer comprising first nanowires (12) extending from the first nanopore structure (111) and a photovoltaic semiconductor material arranged on the first nanopore structure (111) and formed around the first nanowires (12); a current collecting electrode layer (15) arranged on the top of the photovoltaic semiconductor nanowire structure layer; The energy storage device (20) comprises: a second metal electrode layer (21) connected in parallel with the first metal electrode layer (11), the second metal electrode layer (21) having a second nanopore structure (211) formed on the bottom of the second metal electrode layer (21); a cathode nanowire structure layer formed on the bottom of the second metal electrode layer (21); an anode structure layer (23) arranged on the bottom of the cathode nanowire structure layer; An electric energy control device (30) is electrically connected with the current collecting electrode layer (15), the anode structure layer (23), the first metal electrode layer (11) and / or the second metal electrode layer (21), and has a load output end (31). In a non-output state, the electric energy control device (30) controls the power generation device (10) to charge the energy storage device (20). In an output state, the electric energy control device (30) draws electric energy from the power generation device (10) and / or the energy storage device (20) to supply power to the load output end (31).

2. The photovoltaic energy supply device of claim 1, wherein, The first metal electrode layer (11) and the second metal electrode layer (21) are two surfaces of the same metal electrode, or the first metal electrode layer (11) and the second metal electrode layer (21) are two surfaces of two metal blocks.

3. The photovoltaic energy supply of claim 1, wherein, The energy storage device (20) further comprises an electrolyte filling layer (24) arranged between the cathode nanowire structure layer and the anode structure layer (23).

4. A photovoltaic energy supply device according to claim 3, characterised in that The electrolyte filling layer (24) is an organic material, an inorganic material, a liquid material or a solid material.

5. The photovoltaic energy supply of claim 1, wherein, The first metal electrode layer (11) is a valve metal material, and the first nanopore structure (111) is formed by anodic oxidation in an acid solution. The second metal electrode layer (21) is a valve metal material, and the second nanopore structure (211) is formed by anodic oxidation in an acid solution.

6. A photovoltaic energy supply device according to claim 5, characterised in that The valve metal material is Al, Ti, W, Ta, Hf, Nb or Zr.

7. A photovoltaic energy supply device according to claim 6, characterised in that The semiconductor material comprises an N-type semiconductor structure layer (13) arranged on the lower layer and a P-type semiconductor structure layer (14) arranged on the upper layer.

8. The photovoltaic energy supply of claim 6, wherein, The photovoltaic semiconductor nanowire structure layer is obtained by physical vapor deposition, chemical vapor deposition or plasma enhanced chemical vapor deposition.

9. The photovoltaic energy supply of claim 1, wherein, The current collecting electrode layer (15) is a transparent conductive electrode.

10. The photovoltaic energy supply of claim 1, wherein, The cathode nanowire structure layer includes second nanowires (22) extending from the second nanopore structure (211).

11. A photovoltaic energy supply device according to claim 10, characterised in that, The cathode nanowire structure layer is deposited by chemical vapor deposition or electrodeposition on the bottom of the second metal electrode layer.

Images