An air intake structure for improving film formation quality

Abstract

The present invention discloses an air intake structure for improving film formation quality, which relates to the technical field of semiconductor production equipment and includes an air intake chamber, a reaction chamber, and a base; a plurality of protective gas channels and a plurality of reaction gas channels are arranged in the air intake chamber; the intake ends of the plurality of protective gas channels and the plurality of reaction gas channels are all located outside the air intake chamber, and the outlet ends of the plurality of protective gas channels and the plurality of reaction gas channels are all located at the bottom of the air intake chamber; and the outlet ends of adjacent reaction gas channels are completely separated by the outlet ends of the protective gas channels. In the air intake structure for improving film formation quality in the present invention, multiple independent closed channels are used for air intake, the protective gas isolates various reaction gases, and by setting an adjusting member, the cross-sectional area of each reaction gas channel is changed to change the flow rate of the reaction gas at the outlet end to avoid deposition.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor production equipment, and particularly to an air inlet structure for improving film forming quality. Background Art

[0002] Vertical equipment prepares epitaxial wafers according to the principle of chemical vapor deposition. The inside of the equipment reaction chamber is in an atmospheric pressure or negative pressure state, and a variety of process gases are introduced into the chamber to contact and react with the substrate wafer under a high-temperature environment for deposition.

[0003] Wafer preparation is usually carried out continuously for a long time. The nozzle end of the air inlet duct of the reaction chamber may have reaction deposition at the nozzle due to the backflow of the reaction gas, affecting the subsequent air inlet rate. At the same time, considering the losses generated during the process, the size of the air inlet duct itself, and the influence of installation errors, etc., the reaction gas inlet during the process is not uniform enough. Summary of the Invention

[0004] To solve the above technical problems, the present invention provides an air inlet structure for improving film forming quality, which adjusts the cross-sectional areas at both ends of the air inlet duct to accelerate the gas flow rate at the outlet end and reduce the influence of dimensional errors.

[0005] To achieve the above object, the present invention provides the following solution:

[0006] The present invention provides an air inlet structure for improving film forming quality, including an air inlet chamber, a reaction chamber, and a base; the reaction chamber is arranged at the bottom of the air inlet chamber, and the air inlet chamber is communicated with the reaction chamber; the base is located in the lower part of the reaction chamber and is directly below the air inlet chamber; the top of the base is used for supporting the wafer; a base thermal field is arranged inside the base, and the base thermal field is used for heating the wafer; an exhaust port is arranged at the bottom of the reaction chamber; a sleeve is arranged inside the reaction chamber, and an upper thermal field is arranged between the sleeve and the side wall of the reaction chamber; a plurality of protective gas channels and a plurality of reaction gas channels are arranged inside the air inlet chamber; the inlet ends of the plurality of protective gas channels and the plurality of reaction gas channels are all located outside the air inlet chamber, and the outlet ends of the plurality of protective gas channels and the plurality of reaction gas channels are all located at the bottom of the air inlet chamber; and the outlet ends of adjacent reaction gas channels are completely separated by the outlet ends of the protective gas channels.

[0007] Optionally, a plurality of graphite plates are arranged inside the air inlet chamber, and a graphite cover plate is arranged above each layer of graphite plate. A reaction gas channel is arranged between each graphite plate and the corresponding graphite cover plate above it; and each reaction gas channel is communicated to the bottom of the air inlet chamber through an air inlet duct; a protective gas channel is arranged between the topmost graphite cover plate and the inner top of the air inlet chamber and below each layer of graphite plate respectively.

[0008] Optionally, the top of the intake duct is located between the graphite disc and the graphite cover plate, and the other end of the intake duct extends to the bottom of the intake chamber.

[0009] Optionally, a laterally extending limiting ring is circumferentially provided at the top of the intake duct. There is a mounting hole provided on the graphite disc, and a receiving groove corresponding to the laterally extending limiting ring is provided on the graphite cover plate. The inner dimension of the receiving groove is larger than the outer dimension of the laterally extending limiting ring.

[0010] Optionally, an outer adjusting ring is provided around the laterally extending limiting ring. The outer dimension of the outer adjusting ring is smaller than the inner dimension of the receiving groove.

[0011] Optionally, the outer adjusting ring is made of high-purity graphite.

[0012] Optionally, a first adjusting groove is provided at the top end of the inner wall of the intake duct. An inner adjusting ring is provided in the first adjusting groove. A ventilation hole is axially provided in the middle of the inner adjusting ring.

[0013] Optionally, the inner adjusting ring is made of high-purity graphite.

[0014] Optionally, a second adjusting groove is provided at the top end of the inner wall of the intake duct. An adjusting pipe is provided in the second adjusting groove. Horizontally through holes are radially provided in the upper part of the adjusting pipe. A vertically through hole is axially provided in the middle of the adjusting pipe. The top of the vertically through hole is communicated with the horizontally through holes.

[0015] Optionally, the intake duct, the graphite cover plate, and the graphite disc are all made of graphite, and a silicon carbide coating is provided on the outer surface.

[0016] The present invention has achieved the following technical effects compared with the prior art:

[0017] The intake structure for improving film formation quality in the present invention uses multiple independent closed flow channels for intake. The protective gas isolates multiple reaction gases, and by providing an adjusting member, the cross-sectional area of each reaction gas flow channel is changed to change the flow rate of the reaction gas at the outlet end to avoid deposition. Description of the Drawings

[0018] In order to more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the following will briefly introduce the drawings required for use in the embodiments. Obviously, the drawings in the following description are only some embodiments of the present invention. For those of ordinary skill in the art, other drawings can be obtained based on these drawings without creative efforts.

[0019] Figure 1Schematic cross-sectional view of a film-forming device with a side air intake structure;

[0020] Figure 2 Schematic cross-sectional view of the enlarged air intake chamber of the film-forming device;

[0021] Figure 3 Schematic diagram of the structure and installation position of the outer adjustment ring of the air intake duct;

[0022] Figure 4 Schematic diagram of the structure and installation position of the inner adjustment ring inside the air intake duct;

[0023] Figure 5 Schematic diagram of the structure and installation position of the adjustment pipe at the end of the air intake duct.

[0024] Description of reference numerals: 1. Air intake chamber; 2. Reaction chamber; 3. Thermal field; 4. Sleeve; 5. Wafer; 6. Substrate; 7. Base; 8. Rotating mechanism; 9. Graphite cover plate; 10. Graphite disk; 11. Air intake duct; 12. Outer adjustment ring; 13. Inner adjustment ring; 14. Adjustment pipe. Detailed implementation manners

[0025] Next, the technical solutions in the embodiments of the present invention will be clearly and completely described in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.

[0026] Embodiment 1:

[0027] As Figures 1 to 3 shown, this embodiment provides an air intake structure for improving film-forming quality, including an air intake chamber 1, a reaction chamber 2, and a base 7; a reaction chamber 2 is provided at the bottom of the air intake chamber 1, and the air intake chamber 1 is in communication with the reaction chamber 2; the base 7 is located in the lower part of the reaction chamber 2 and is directly below the air intake chamber 1; the top of the base 7 is used to support the wafer 5; a base thermal field is provided inside the base 7, and the base thermal field is used to heat the wafer 5; an exhaust port is provided at the bottom of the reaction chamber 2; a sleeve 4 is provided inside the reaction chamber 2, and an upper thermal field is provided between the sleeve 4 and the side wall of the reaction chamber 2; three protective gas flow channels and two reaction gas flow channels are provided inside the air intake chamber 1, and the two reaction gas flow channels are respectively introduced with a silicon source reaction gas and a carbon source reaction gas; the intake ends of the three protective gas flow channels and the two reaction gas flow channels are all located outside the air intake chamber 1, and the outlet ends of the three protective gas flow channels and the two reaction gas flow channels are all located at the bottom of the air intake chamber 1; and the outlet ends of the adjacent reaction gas flow channels are completely separated by the outlet ends of the protective gas flow channels.

[0028] In this specific embodiment, a sleeve 4 is provided in the upper middle part of the reaction chamber 2, and a thermal field 3 is provided between the sleeve 4 and the inner wall of the reaction chamber 2. The intake air can be uniformly preheated through the thermal field 3 and the sleeve 4. A substrate 6 is provided on the top of the base 7, and the top of the substrate 6 is used to support the wafer 5. The bottom of the base 7 is connected to a rotating mechanism 8, and the base 7 is driven by the rotating mechanism 8 to rotate.

[0029] Two layers of graphite disks 10 are provided in the intake air chamber 1. A graphite cover plate 9 is provided above each layer of graphite disk 10. A reaction gas flow channel is provided between each graphite disk 10 and the corresponding graphite cover plate 9 above it; and each reaction gas flow channel is communicated to the bottom of the intake air chamber 1 through an intake air duct 11; A protective gas flow channel is provided between the topmost graphite cover plate 9 and the inner top of the intake air chamber 1 and below each layer of graphite disk 10 respectively.

[0030] The top of the intake air duct 11 is located between the graphite disk 10 and the graphite cover plate 9, and the other end of the intake air duct 11 extends to the bottom of the intake air chamber 1. Specifically, a laterally extending limiting ring is provided along the circumference at the top of the intake air duct 11. An installation hole is provided on the graphite disk 10, and a receiving groove corresponding to the laterally extending limiting ring is provided on the graphite cover plate 9. The inner dimension of the receiving groove is larger than the outer dimension of the laterally extending limiting ring. In this specific embodiment, the receiving groove is a cylindrical groove, the laterally extending limiting ring is a circular ring structure, and the thickness of the laterally extending limiting ring is less than the depth of the receiving groove.

[0031] An adjusting member is provided at the top end of the intake air duct 11. The cross-sectional area changes by 40% to 90% of the original flow path diameter before and after the installation of the adjusting member. When installing the adjusting member, only a necessary installation gap needs to be reserved in terms of size to avoid obvious deviation of the adjusting member during the intake process, which affects the uniformity of the intake air.

[0032] In this specific embodiment, the adjusting member is an outer adjusting ring 12. The outer adjusting ring 12 is provided around the laterally extending limiting ring, and the outer dimension of the outer adjusting ring 12 is smaller than the inner dimension of the receiving groove. The outer adjusting ring 12 is made of high-purity graphite. High-purity graphite has good machinability and meets the processing dimensions required for adjustment.

[0033] The intake air duct 11, the graphite cover plate 9 and the graphite disk 10 are all made of graphite, and a silicon carbide coating is provided on the outer surface. The surface coating with high heat resistance can increase the reflectivity and reduce the heat conduction of the thermal field 3 to the intake air chamber 1 to inhibit deposition.

[0034] Embodiment Two:

[0035] As Figure 4As shown in the figure, this embodiment is an improved embodiment based on Embodiment 1. In this embodiment, the adjusting member is an inner adjusting ring 13. A first adjusting groove is provided at the top end of the inner wall of the air inlet duct 11. The inner adjusting ring 13 is arranged in the first adjusting groove. A ventilation hole is axially arranged in the middle of the inner adjusting ring 13. The inner adjusting ring 13 is made of high-purity graphite.

[0036] Embodiment 3:

[0037] As Figure 5 shown in the figure, this embodiment is an improved embodiment based on Embodiment 1. In this embodiment, a second adjusting groove is provided at the top end of the inner wall of the air inlet duct 11. An adjusting pipe 14 is arranged in the second adjusting groove; a transverse through hole is radially arranged in the upper part of the adjusting pipe 14, and a vertical through hole is axially arranged in the middle of the adjusting pipe 14. The top of the vertical through hole is communicated with the transverse through hole. The adjusting pipe 14 is installed in the second adjusting groove and is provided with a plurality of laterally distributed through holes in the circumferential direction. Chamfering treatment is performed on the second adjusting groove to ensure smooth air intake.

[0038] It should be noted that for those skilled in the art, obviously, the present invention is not limited to the details of the above-described exemplary embodiments, and without departing from the spirit or basic characteristics of the present invention, the present invention can be implemented in other specific forms. Therefore, in any aspect, the embodiments should be regarded as exemplary and non-limiting. The scope of the present invention is defined by the appended claims rather than the above description. Therefore, all changes falling within the meaning and scope of the equivalent elements of the claims are intended to be included in the present invention, and any reference signs in the claims should not be regarded as limiting the claims involved.

[0039] In this specification, specific examples are used to elaborate on the principles and implementation manners of the present invention. The descriptions of the above embodiments are only used to help understand the method and its core idea of the present invention; at the same time, for those of ordinary skill in the art, according to the idea of the present invention, there will be changes in the specific implementation manners and application scopes. In summary, the content of this specification should not be construed as a limitation to the present invention.

Claims

1. An air intake structure for improving film forming quality, characterized in that, It includes an intake chamber, a reaction chamber and a base; the reaction chamber is provided at the bottom of the intake chamber, and the intake chamber is in communication with the reaction chamber; the base is located in the lower part of the reaction chamber and directly below the intake chamber; the top of the base is used to support the wafer; a base thermal field is provided inside the base, and the base thermal field is used to heat the wafer; an exhaust port is provided at the bottom of the reaction chamber; a sleeve is provided inside the reaction chamber, and an upper thermal field is provided between the sleeve and the side wall of the reaction chamber. Multiple protective gas channels and multiple reaction gas channels are provided inside the intake chamber; the intake ends of the multiple protective gas channels and the multiple reaction gas channels are all located outside the intake chamber, and the outlet ends of the multiple protective gas channels and the multiple reaction gas channels are all located at the bottom of the intake chamber; and the outlet ends of adjacent reaction gas channels are completely separated by the outlet ends of the protective gas channels. Multiple layers of graphite plates are provided inside the intake chamber, and a graphite cover plate is provided above each layer of graphite plate. A reaction gas channel is provided between each graphite plate and the corresponding graphite cover plate above it; and each reaction gas channel is connected to the bottom of the intake chamber through an intake conduit. A protective gas channel is provided respectively between the topmost graphite cover plate and the inner top of the intake chamber and below each layer of graphite plate. The top of the intake conduit is located between the graphite plate and the graphite cover plate, and the other end of the intake conduit extends to the bottom of the intake chamber. A laterally extending lateral limiting ring is provided along the circumference at the top of the intake conduit. An installation hole is provided on the graphite plate, and a receiving groove corresponding to the lateral limiting ring is provided on the graphite cover plate. The inner dimension of the receiving groove is larger than the outer dimension of the lateral limiting ring. An outer adjustment ring is provided around the lateral limiting ring. The outer dimension of the outer adjustment ring is smaller than the inner dimension of the receiving groove. A first adjustment groove is provided at the top end of the inner wall of the intake conduit. An inner adjustment ring is provided in the first adjustment groove. A ventilation hole is provided axially in the middle of the inner adjustment ring.

2. The air intake structure for improving film forming quality according to claim 1, characterized in that The outer adjustment ring is made of high-purity graphite.

3. The air intake structure for improving film forming quality according to claim 1, characterized in that, The inner adjustment ring is made of high-purity graphite.

4. The intake structure for improving film formation quality according to claim 1, characterized in that, A second adjustment groove is provided at the top end of the inner wall of the intake conduit. An adjustment tube is provided in the second adjustment groove. A lateral through hole is provided radially in the upper part of the adjustment tube, and a vertical through hole is provided axially in the middle of the adjustment tube. The top of the vertical through hole is in communication with the lateral through hole.

5. The air intake structure for improving film forming quality according to claim 1, characterized in that, The intake conduit, the graphite cover plate and the graphite plate are all made of graphite, and a silicon carbide coating is provided on the outer surface.

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