Thermal response time acquisition method, device, apparatus, system and readable storage medium

Abstract

The application provides a thermal response time acquisition method, device, equipment, system and readable storage medium. The application comprises a test system including a pulse power supply, a test module, a data collector and a processing device, the input end of the data collector is connected with the output end of the test module, the output end of the data collector is connected with the processing device, the method is applied to the processing device, when the pulse power supply provides a pulse voltage for the test module, a plurality of output voltage values collected by the data collector are acquired; the output voltage value is used for representing the voltage change value between the two ends of the to-be-tested detector; according to the plurality of output voltage values, a change curve of the output voltage value with time is acquired; according to the change curve of the output voltage value with time, the thermal response time of the to-be-tested detector is acquired; and the thermal response time is output. The application can improve the convenience of thermal response time test and improve the test precision.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of uncooled infrared detector, and particularly to a thermal response time acquisition method, device, equipment, system and readable storage medium. BACKGROUND

[0002] Uncooled infrared detectors are widely used in power, fire fighting, medical treatment and many other fields due to their light weight, low power consumption and low cost. Among them, the thermal resistance type detector dominates the uncooled infrared detection technology.

[0003] When the detector receives incident radiation, the output of the detector needs a certain time to adjust to the incident radiation power value, and this time is the thermal response time. The thermal response time is one of the important parameters for measuring the performance of the thermal resistance type detector. At present, the thermal response time of the thermal resistance type detector is measured by using a mechanical chopper to modulate the blackbody radiation, or by using a pulse laser. However, the thermal response time test is not convenient, and the test precision is low. SUMMARY

[0004] The present application provides a thermal response time acquisition method, device, equipment, system and readable storage medium to solve the problem of low test convenience and low test precision of the thermal response time.

[0005] In a first aspect, the present application provides a thermal response time acquisition method. The test system includes a pulse power supply, a test module, a data collector and a processing device. The test module includes a balance bridge, the balance bridge includes a test arm and a comparison arm, the test arm includes a detector to be tested and a first fixed value resistor, and the comparison arm includes a second fixed value resistor and a variable resistor. The input end of the data collector is connected with the output end of the test module, and the output end of the data collector is connected with the processing device. The method is applied to the processing device, and the method includes:

[0006] When the pulse power supply provides a pulse voltage for the test module, a plurality of output voltage values collected by the data collector are acquired. The output voltage value is used to represent the voltage change value between the detector to be tested.

[0007] According to the plurality of output voltage values, a change curve of the output voltage value with time is acquired.

[0008] According to the change curve of the output voltage value with time, the thermal response time of the detector to be tested is acquired.

[0009] The thermal response time is output.

[0010] Optionally, the obtaining the change curve of the output voltage value over time according to the plurality of output voltage values comprises:

[0011] obtaining a pulse period of the pulse power supply;

[0012] obtaining a plurality of output voltage values collected by the data collector when the pulse power supply provides the pulse voltage for the test module in each pulse period;

[0013] obtaining a change curve of the output voltage value over time in a plurality of pulse periods according to the plurality of output voltage values collected by the data collector when the pulse power supply provides the pulse voltage for the test module in each pulse period.

[0014] Optionally, the obtaining the thermal response time of the detector under test according to the change curve of the output voltage value over time comprises:

[0015] determining a time corresponding to a voltage different from the initial voltage of the detector under test by a preset difference value in each change curve according to the change curve of each output voltage value over time;

[0016] determining the thermal response time of the detector under test according to the time corresponding to each change curve.

[0017] Optionally, the determining the thermal response time of the detector under test according to the time corresponding to each change curve comprises:

[0018] taking an average value of the time corresponding to each change curve as the thermal response time of the detector under test.

[0019] Optionally, the method further comprises:

[0020] adjusting a test parameter of the test system, the test parameter comprising: a voltage output value of the pulse power supply, and / or a resistance value of the variable resistor.

[0021] Optionally, the detector under test is a microbolometer.

[0022] In a second aspect, the present application provides a processing device, a test system comprising a pulse power supply, a test module, a data collector and the processing device, the test module comprising a balanced bridge, the balanced bridge comprising a test arm and a comparison arm, the test arm comprising a detector under test and a first fixed resistor, the comparison arm comprising a second fixed resistor and a variable resistor, an input end of the data collector being connected with an output end of the test module, and an output end of the data collector being connected with the processing device, the processing device comprising:

[0023] The first obtaining module is configured to obtain a plurality of output voltage values collected by the data collector when the pulse power supply provides a pulse voltage for the test module; the output voltage values are used to represent voltage variation values across the detector under test.

[0024] The second obtaining module is configured to obtain a curve of the output voltage values changing with time according to the plurality of output voltage values.

[0025] The third obtaining module is configured to obtain a thermal response time of the detector under test according to the curve of the output voltage values changing with time.

[0026] The output module is configured to output the thermal response time.

[0027] In a third aspect, the present application provides an electronic device, comprising a processor and a memory connected with the processor in communication;

[0028] The memory stores computer-executed instructions.

[0029] The processor executes the computer-executed instructions stored in the memory to implement the thermal response time obtaining method according to any one of the first aspect.

[0030] In a fourth aspect, the present application provides a test system, comprising a pulse power supply, a test module, a data collector and a processing device; the test module comprises a balanced bridge, the balanced bridge comprises a test arm and a comparison arm, the test arm comprises a detector under test and a first fixed resistor, the comparison arm comprises a second fixed resistor and a variable resistor, an input end of the data collector is connected with an output end of the test module, and an output end of the data collector is connected with the processing device.

[0031] The processing device is configured to execute the thermal response time obtaining method according to any one of the first aspect.

[0032] In a fifth aspect, the present application provides a computer-readable storage medium, comprising computer-executed instructions stored in the computer-readable storage medium, the computer-executed instructions are executed by a processor to implement the thermal response time obtaining method according to any one of the first aspect.

[0033] In a sixth aspect, the present application provides a computer program product, comprising a computer program, the computer program is executed by a processor to implement the thermal response time obtaining method according to any one of the first aspect.

[0034] In a seventh aspect, the present application provides a chip, the chip stores a computer program, the computer program is executed by the chip to implement the thermal response time obtaining method according to any one of the first aspect.

[0035] The thermal response time acquisition method, device, equipment, system and readable storage medium provided by the application can avoid the adverse effects of mechanical chopper on the detector test, make the test of the thermal response time of the detector more convenient and accurate, and avoid the calculation from voltage to temperature, so that the calculation is more simple and accurate. BRIEF DESCRIPTION OF DRAWINGS

[0036] The accompanying drawings, which are incorporated herein and constitute part of the specification, illustrate embodiments consistent with the application and, together with the description, serve to explain the principles of the application.

[0037] Figure 1 A system architecture schematic diagram of a test system provided by an embodiment of the application;

[0038] Figure 2 A circuit connection schematic diagram of a test system provided by an embodiment of the application;

[0039] Figure 3 A flowchart of a thermal response time acquisition method provided by an embodiment of the application;

[0040] Figure 4 A schematic diagram of a voltage-time curve provided by an embodiment of the application;

[0041] Figure 5 A flowchart of another thermal response time acquisition method provided by an embodiment of the application;

[0042] Figure 6 A structural schematic diagram of a processing device provided by an embodiment of the application;

[0043] Figure 7 A structural schematic diagram of an electronic device 700 provided by an embodiment of the application.

[0044] The specific embodiments of the application have been shown by the above drawings, and will be described in more detail hereinafter. These drawings and textual descriptions are not intended to limit the scope of the concept of the application by any means, but to illustrate the concept of the application to those skilled in the art by referring to specific embodiments. DETAILED DESCRIPTION

[0045] The exemplary embodiments will be described in detail herein with reference to the attached drawings. The description herein refers to the accompanying drawings, which show by way of example specific exemplary embodiments. The description herein, in relation to the drawings, refers to the same or similar elements using like reference numerals throughout the several views. The implementation described in the following exemplary embodiments is not meant to represent all implementations consistent with the present application. Rather, they are merely examples of apparatus and methods consistent with some aspects of the present application as detailed in the appended claims.

[0046] Firstly, the terms involved in the present application are explained:

[0047] Uncooled infrared detector: is the use of infrared radiation heat effect, the infrared radiation is first converted into heat, and then through the sensitive element material to convert heat into electrical signal detector.

[0048] Thermistor type detector: is made of oxide semiconductor very small sheet, surface black. When the sheet absorbs infrared radiation and temperature rises, the resistance changes, the amount of change in resistance to measure the strength of infrared radiation. Among them, the microbolometer detector is a typical thermistor type detector.

[0049] Taking the microbolometer detector as an example, the derivation principle of the thermal response time of the thermistor type detector is briefly described:

[0050] The heat balance equation of the detector to be measured after receiving infrared radiation is:

[0051] Equation (1)

[0052] Where C is the heat capacity of the detector to be measured, I, V are the current and voltage across the detector to be measured, P t and P s are the energy radiated to the detector to be measured by the external thermal radiator and the blackbody cavity, g is the thermal conductivity of the thermal conduction of the detector to be measured, ε is the blackness of the gray body or the actual object (i.e. the infrared absorption rate of the bolometer surface), T s is the initial temperature of the detector to be measured, T is the temperature of the detector to be measured at time t, σ is the Stefan-Boltzmann constant, and A is the area of the detector to be measured receiving radiation.

[0053] When the detector to be measured is not biased by the current, the heat balance equation of the detector to be measured is:

[0054]

[0055] Where Q represents the energy power absorbed by the detector to be measured, i.e. Q = εP t + εP s - 2AεσT 4 .

[0056] Therefore, when no current bias is applied, IV=0, and when the detector under test is suddenly subjected to a power of Qheat in the case of thermal equilibrium, the temperature of the detector under test can be expressed as:

[0057]

[0058] Since the thermal response time τ can be expressed as τ=c / g, the above formula (3) can be further expressed as:

[0059]

[0060] When t=τ

[0061]

[0062] After a time of the response time length, the temperature change is proportional to the temperature change when the temperature is stable for a long time, and the proportion a is:

[0063]

[0064] Therefore, the time taken by the temperature of the thermistor type detector from the initial temperature to the temperature change value of 1-e -1 ≈63.2% is called the thermal response time, wherein the temperature change value refers to the difference between the initial temperature and the final temperature.

[0065] At present, the test of the thermal response time mainly adopts the following two ways:

[0066] (1) A mechanical chopper is used to periodically modulate the blackbody radiation, but an electrical signal is needed to control the mechanical chopper to work, and there is a certain delay, which will adversely affect the test accuracy.

[0067] (2) A pulse laser is used for measurement, but the pulse laser as a test light source is expensive, and the temperature of the laser is high after working for a period of time, while the temperature of the microbolometer is low when working, which will affect the normal work of the microbolometer, and the measurement accuracy is low.

[0068] In summary, the existing method for measuring the thermal response time is not convenient, and the measurement accuracy of the thermal response time is low.

[0069] Therefore, the application provides a thermal response time acquisition method, which equivalently replaces the relationship between temperature and time with the relationship between voltage and time, so that a test system composed of a pulse power supply and a test module is used to make the Joule heat generated by the to-be-tested detector after being powered on provide a heat source for the to-be-tested detector, to obtain a curve of the voltage change value of the to-be-tested detector with time, and then to obtain the thermal response time, so as to eliminate the adverse effects of the mechanical chopper or the pulse laser on the test, and at the same time, the Joule heat can be used as the heat source, without the need of using other heat sources, so that the test is more convenient.

[0070] The execution subject of the application is a processing device, which can be a computer, a tablet computer or other electronic equipment with processing capability, or a chip or a chip module.

[0071] The technical solutions of the application and how the technical solutions solve the above technical problems will be described in detail in combination with specific embodiments. The following specific embodiments can be combined with each other, and the same or similar concepts or processes can not be described again in some embodiments. The embodiments of the application will be described in combination with the drawings.

[0072] Figure 1 A system architecture schematic diagram of a test system provided by the embodiments of the application is shown in FIG. 1. Figure 1 As shown in the figure, the test system includes a pulse power supply, a test module, a data collector and a processing device.

[0073] The test module includes a balanced bridge, and the output voltage of the test module is the voltage change value of the to-be-tested detector, that is, the output voltage value, which can be used to accurately obtain the change of the voltage change value of the to-be-tested detector caused by the change of the resistance. The balanced bridge includes a test arm and a comparison arm, the test arm includes a to-be-tested detector R1 and a first fixed resistance R4, and the comparison arm includes a second fixed resistance R2 and a variable resistance R3.

[0074] The to-be-tested detector can be a non-cooled infrared detector of a thermistor type, for example, a microbolometer detector. It should be noted that the application does not limit the thermosensitive material used by the detector.

[0075] The input end of the data collector is connected with the output end of the test module, and the output end of the data collector is connected with the processing device. The data collector can be an oscilloscope, a waveform recorder or other devices, which is used to obtain the output voltage value data.

[0076] The pulse power source is used to provide a pulse voltage for the test module. The pulse voltage is provided by using the pulse power source, and the Joule heat generated after the detector is powered on is used to provide a heat source for the detector to be tested, so as to eliminate the adverse effects caused by the mechanical chopper or the pulse laser on the test.

[0077] The processing device can be a computer, a tablet computer or the like electronic device with processing capability, and is used to process the voltage data and obtain the thermal response time.

[0078] Optionally, the test module can further include a voltage amplifier used to amplify the output voltage value output by the balance bridge, so as to more accurately capture the change of the output voltage value. The positive input end of the voltage amplifier is connected with the comparison arm, and the negative input end is connected with the test arm. The output end of the voltage amplifier is connected with the input end of the data collector. Figure 2 A circuit connection schematic diagram of a test system provided by the embodiment of the application is provided.

[0079] It should be noted that when the test system is used for testing, the detector to be tested or the test system needs to be placed in a vacuum and light-free environment to eliminate the interference of infrared radiation.

[0080] The following describes how to obtain the thermal response time by taking the test system architecture shown in Figure 2 as an example.

[0081] Figure 3 A flowchart of a thermal response time obtaining method provided by the embodiment of the application is shown in Figure 3 The method includes the following steps.

[0082] S301. When the pulse power source provides a pulse voltage for the test module, a plurality of output voltage values collected by the data collector are obtained.

[0083] When the pulse power source provides a pulse voltage for the test module, the detector to be tested is powered on, and the Joule heat generated after the power on can provide a heat source for the detector to be tested, so as to change the resistance of the detector to be tested, so that the voltage across the detector to be tested changes. Therefore, the output voltage value obtained can be used to represent the voltage change value across the detector to be tested, so as to represent the resistance change of the detector to be tested, and further represent the temperature change of the detector to be tested.

[0084] A possible implementation manner is as follows. As described above, the input end of the data collector is connected with the output end of the test module, and the output end is connected with the processing device. The processing device can obtain a plurality of output voltage values collected by the data collector.

[0085] In another possible implementation, taking the voltage amplifier as an example of the test module, the processing device can directly collect, by using the data collector, the amplified data output by the output end of the voltage amplifier, where the amplified data is used to represent the voltage change value of the to-be-tested detector.

[0086] S302. Obtain a change curve of the output voltage value with respect to time according to the plurality of output voltage values.

[0087] In one possible implementation, the change curve is obtained by using a discrete manner to obtain a plurality of voltage data. The change curve of the output voltage value with respect to time is obtained according to the time of the plurality of output voltage data of the test module collected by the data collector.

[0088] For example, the processing device can obtain, by using the data collector, a plurality of voltages output by the test module and a plurality of collection times corresponding to the plurality of voltages. The change curve of the output voltage value with respect to time is formed by using the plurality of collection times and the output voltage values obtained at the plurality of collection times.

[0089] In another possible implementation, the change curve is obtained by using a manner to obtain voltage data at all time points of the output voltage value. The change curve of the output voltage value with respect to time is obtained according to the time of the output voltage value obtained by the processing device.

[0090] S303. Obtain the thermal response time of the to-be-tested detector according to the change curve of the output voltage value with respect to time.

[0091] Since the to-be-tested detector is a thermistor detector, the resistance value of the to-be-tested detector is affected by temperature change, and the output voltage is related to the resistance value. Therefore, the change relationship of the output voltage with respect to time can be used to replace the change relationship of the temperature with respect to time, and then the thermal response time is obtained.

[0092] In one possible implementation, the time t1 corresponding to the voltage that is different from the initial voltage of the detector under test by a preset difference in the change curve of the output voltage value over time is determined according to the change curve of the output voltage value over time. The difference between the time t1 and the time t0 corresponding to the initial voltage of the detector under test is the time taken from the initial voltage to the voltage that is different from the initial voltage by the preset difference, that is, the thermal response time of the detector under test. The initial voltage refers to the output voltage value obtained when the detector under test is powered on. The voltage that is different from the initial voltage by the preset difference refers to a preset voltage difference based on the relationship between the final voltage and the initial voltage. The voltage value corresponding to the initial voltage plus the voltage difference, or a further transformed voltage value, for example, the voltage value when the final voltage of the detector under test is 63.2% of the voltage difference between the initial voltage and the final voltage. The final voltage refers to the voltage value when the output voltage value no longer changes after being powered on for a period of time. Figure 4 A schematic diagram of a voltage change curve over time is provided for an embodiment of the present application. As shown in Figure 4 the time corresponding to the initial voltage U0 is t0, and the time corresponding to the voltage value of 0.632(U e -U0) is t1. The time taken from the initial voltage U0 to 0.632(U e -U0) is t1-t0, that is, τ, and τ is the thermal response time of the detector under test.

[0093] In another possible implementation, as mentioned above, the thermal response time is related to the temperature, and the voltage is related to the temperature. Therefore, a mapping relationship between the thermal response time and the voltage can be established. Based on the mapping relationship, the thermal response time of the detector under test can be obtained in combination with the change curve of the output voltage value over time.

[0094] S304, output the thermal response time.

[0095] Optionally, before performing the steps S301-S304, the test parameters of the test system can be adjusted. The test parameters include the voltage output value of the pulse power supply and / or the resistance value of the variable resistor.

[0096] The balance bridge in the test module needs to be adjusted in advance before testing, that is, the resistance value of the variable resistor is adjusted so that the output voltage value at the output end of the test module is close to 0. Therefore, when the test system is used for testing, the change of the output voltage value at the output end of the test module is caused by the change of the resistance value of the detector under test due to the change of the temperature, and the output voltage value at the output end of the test module can reflect the change of the resistance value of the detector under test, that is, the change of the temperature.

[0097] As mentioned above, the pulse power source is used to provide the pulse voltage for the test module, and thus the voltage output value of the pulse power source needs to be adjusted to ensure that the to-be-tested detector works normally. The output voltage value can be the resistance value of the to-be-tested detector calculated according to the resistance value of the adjusted variable resistor, and then the working voltage of the to-be-tested detector is obtained, that is, the voltage output value; or the rated voltage of the to-be-tested detector can be used as the voltage output value.

[0098] The thermal response time acquisition method provided in the application can avoid the adverse effects of the mechanical chopper and the like on the test, make the thermal response time test more convenient and accurate, and avoid the conversion from voltage to temperature for calculation, so that the calculation is more simple and accurate.

[0099] The following will take the test system shown in Figure 2 and the to-be-tested detector as an example to illustrate how to acquire the output voltage value-time curve and the thermal response time.

[0100] Figure 5 The flowchart of another thermal response time acquisition method provided in the embodiments of the application is shown in Figure 5 The method comprises the following steps.

[0101] S501, acquiring the pulse period of the pulse power source.

[0102] The pulse period refers to the time interval between two adjacent pulses. The pulse period needs to ensure that the temperature of the to-be-tested detector returns to the initial temperature before the next pulse starts, that is, the output voltage value collected by the data collector is the initial voltage value. The initial temperature refers to the temperature of the to-be-tested detector when the to-be-tested detector is not powered on, or the ambient temperature of the to-be-tested detector when the to-be-tested detector is not powered on. Thus, the pulse period can be the time for the output voltage value to return from the final voltage to the initial voltage, or a preset time, for example, 5 min.

[0103] S502, acquiring a plurality of output voltage values collected by the data collector when the pulse power source provides the pulse voltage for the test module in each pulse period.

[0104] The data collector collects the amplified output voltage value output by the voltage amplifier.

[0105] S503, acquiring a plurality of output voltage value-time curves in a plurality of pulse periods according to the plurality of output voltage values collected by the data collector in each pulse period.

[0106] That is, according to the plurality of output voltage values collected by the data collector in each pulse period, the output voltage value-time curve in the pulse period is acquired, and the output voltage value-time curves in the plurality of pulse periods are acquired.

[0107] S504, determining a time corresponding to a voltage different from the initial voltage of the to-be-tested detector by a preset difference value in each of the output voltage value-time curves.

[0108] S505, determining the thermal response time of the to-be-tested detector according to the time corresponding to each of the output voltage value-time curves.

[0109] The time corresponding to each of the output voltage value-time curves refers to the time spent from the initial voltage to the voltage different from the initial voltage by the preset difference value in each of the output voltage value-time curves, and the time τ in the formula (1) is referred to. Figure 4

[0110] In one possible implementation, an average value of the time corresponding to each of the output voltage value-time curves is taken as the thermal response time of the to-be-tested detector.

[0111] In another possible implementation, a minimum value, a maximum value, or a randomly selected value of the time corresponding to each of the output voltage value-time curves is taken as the thermal response time of the to-be-tested detector.

[0112] The thermal response time acquisition method provided in the application can amplify the output voltage signal of the balance bridge by using the voltage amplifier, improve the strength of the output voltage signal, so that the data collector can accurately capture the voltage change caused by the resistance value change of the to-be-tested detector, and the pulse period of the pulse power supply can be set to perform multiple tests, so that the acquired thermal response time is more accurate, and the test precision of the thermal response time is improved.

[0113] Figure 6 A structural schematic diagram of a processing apparatus provided in an embodiment of the application is shown in FIG. 1. As shown in FIG. 1, the processing apparatus includes a first acquisition module 11, a second acquisition module 12, a third acquisition module 13, and an output module 14. Optionally, the processing apparatus can further include an adjustment module 15. Figure 6

[0114] The first acquisition module 11 is configured to acquire a plurality of output voltage values collected by the data collector when the pulse power supply provides the test module with a pulse voltage; and the output voltage value is used to represent a voltage change value between the to-be-tested detector. ​​

[0115] The second obtaining module 12 is configured to obtain a curve of the output voltage value changing with time according to the plurality of output voltage values.

[0116] The third obtaining module 13 is configured to obtain the thermal response time of the to-be-tested detector according to the curve of the output voltage value changing with time.

[0117] The output module 14 is configured to output the thermal response time.

[0118] In a possible implementation, the second obtaining module 12 is specifically configured to obtain a pulse period of the pulse power supply; obtain a plurality of output voltage values collected by the data collector when the pulse power supply provides pulse voltage for the test module in each pulse period; and obtain a curve of the output voltage value changing with time in a plurality of pulse periods according to the plurality of output voltage values collected by the data collector when the pulse power supply provides pulse voltage for the test module in each pulse period.

[0119] In this implementation, the third obtaining module 13 is configured to determine, according to each curve of the output voltage value changing with time, a time corresponding to a voltage that is different from the initial voltage of the to-be-tested detector by a preset difference value in each curve.

[0120] The thermal response time of the to-be-tested detector is determined according to the time corresponding to each curve.

[0121] The third obtaining module 13 can also be configured to take an average value of the time corresponding to each curve as the thermal response time of the to-be-tested detector.

[0122] In a possible implementation, the adjusting module 15 is configured to adjust a test parameter of the test system, and the test parameter includes a voltage output value of the pulse power supply and / or a resistance value of the variable resistor.

[0123] In a possible implementation, the to-be-tested detector is a microbolometer.

[0124] The processing device provided in the present application can execute the thermal response time obtaining method in the method embodiments, and has similar implementation principles and technical effects, which will not be described here.

[0125] Figure 7 A structural schematic diagram of an electronic device 700 is provided for the embodiments of the present application. As shown in the figure, the electronic device 700 can include at least one processor 701 and a memory 702, for example, a computer, a tablet computer, and the like. Figure 7

[0126] ​The memory 702 is configured to store programs. Specifically, the programs can include program codes including computer operation instructions. The memory 702 can include a high-speed RAM memory, and can further include a non-volatile memory such as at least one disk memory.

[0127] The processor 701 is configured to execute the computer operation instructions stored in the memory 702, so as to implement the heat response time acquisition method described in the foregoing method embodiments. The processor 701 can be a central processing unit (CPU), or an application specific integrated circuit (ASIC), or one or more integrated circuits configured to implement the embodiments of the present application.

[0128] The electronic device 700 can further include a communication interface 703, through which the electronic device 700 can communicate with external devices. The external devices can be computers, tablet computers, and the like.

[0129] In specific implementation, if the communication interface 703, the memory 702 and the processor 701 are independently implemented, the communication interface 703, the memory 702 and the processor 701 can be connected through a bus and complete communication therebetween. The bus can be an industry standard architecture (ISA) bus, a peripheral component (PCI) bus or an extended industry standard architecture (EISA) bus, etc. The bus can be divided into an address bus, a data bus, a control bus, etc., but does not mean that there is only one bus or one type of bus.

[0130] Optionally, in specific implementation, if the communication interface 703, the memory 702 and the processor 701 are integrated on a chip, the communication interface 703, the memory 702 and the processor 701 can complete communication through an internal interface.

[0131] The application further provides a computer readable storage medium, which can include a U disk, a mobile hard disk, a read-only memory (ROM), a random access memory (RAM), a magnetic disk or an optical disk, and various storage media capable of storing program codes. Specifically, the computer readable storage medium stores computer execution instructions, and the computer execution instructions are used for the thermal response time acquisition method in the above embodiments.

[0132] The application further provides a computer program product, which includes execution instructions stored in a readable storage medium. At least one processor of the electronic device 700 can read the execution instructions from the readable storage medium, and the at least one processor executes the execution instructions to enable the electronic device 700 to implement the thermal response time acquisition method provided in the various embodiments.

[0133] The application further provides a chip, and the chip stores a computer program. When the computer program is executed by the chip, the thermal response time acquisition method provided in the various embodiments is implemented.

[0134] Other embodiments of the application will be apparent to those skilled in the art from consideration of the specification and practice of the application disclosed herein. The application is intended to cover any variations, uses or adaptations of the application following, in general, the principles of the application and including such departures from the present disclosure as come within known or customary practice in the art to which the application pertains or can relate. The specification and examples are to be regarded as illustrative only, and the true scope and spirit of the application are indicated by the appended claims.

[0135] It should be understood that the application is not limited to the precise construction that has been described above and shown in the accompanying drawings, and that various modifications and changes can be made by those skilled in the art without departing from the scope of the application. The scope of the application is limited only by the appended claims.

Claims

1. A method for obtaining thermal response time, characterized in that, The testing system includes a pulse power supply, a testing module, a data acquisition unit, and a processing device. The testing module includes a balanced bridge circuit, which comprises a test arm and a comparison arm. The test arm includes a detector under test and a first fixed resistor. The comparison arm includes a second fixed resistor and a variable resistor. The input terminal of the data acquisition unit is connected to the output terminal of the testing module, and the output terminal of the data acquisition unit is connected to the processing device. The method is applied to the processing device, and the method includes: When the pulse power supply provides a pulse voltage to the test module, multiple output voltage values ​​are acquired by the data acquisition unit; the output voltage values ​​are used to characterize the voltage change across the detector under test. Based on the multiple output voltage values, obtain the curve of the output voltage value changing over time; The thermal response time of the detector under test is obtained based on the curve of the output voltage value changing over time. Output the thermal response time.

2. The method according to claim 1, characterized in that, The step of obtaining the output voltage value change curve over time based on multiple output voltage values ​​includes: Obtain the pulse period of the pulse power supply; The data acquisition unit acquires multiple output voltage values ​​when the pulse power supply provides a pulse voltage to the test module in each pulse cycle. Based on the multiple output voltage values ​​collected by the data acquisition unit when the pulse power supply provides pulse voltage to the test module in each pulse cycle, the curves of the output voltage values ​​changing with time within multiple pulse cycles are obtained.

3. The method according to claim 2, characterized in that, The step of obtaining the thermal response time of the detector under test based on the curve of the output voltage value changing over time includes: Based on the curves of the output voltage values ​​over time, determine the time corresponding to the voltage in each curve that differs from the initial voltage of the detector under test by a preset difference. The thermal response time of the detector under test is determined based on the time corresponding to each change curve.

4. The method according to claim 3, characterized in that, Determining the thermal response time of the detector under test based on the time corresponding to each change curve includes: The average value of the time corresponding to each change curve is taken as the thermal response time of the detector under test.

5. The method according to any one of claims 1-4, characterized in that, The method further includes: Adjust the test parameters of the test system, the test parameters including: the voltage output value of the pulse power supply, and / or the resistance value of the variable resistor.

6. The method according to any one of claims 1-4, characterized in that, The detector to be tested is a microbolometer.

7. A processing apparatus, characterized in that, The testing system includes a pulse power supply, a testing module, a data acquisition unit, and a processing device. The testing module includes a balanced bridge circuit, which comprises a test arm and a comparison arm. The test arm includes a detector under test and a first fixed resistor. The comparison arm includes a second fixed resistor and a variable resistor. The input terminal of the data acquisition unit is connected to the output terminal of the testing module, and the output terminal of the data acquisition unit is connected to the processing device. The processing device includes: The first acquisition module is used to acquire multiple output voltage values ​​collected by the data acquisition unit when the pulse power supply provides a pulse voltage to the test module; the output voltage values ​​are used to characterize the voltage change value across the detector under test; The second acquisition module is used to acquire the curve of the output voltage value changing over time based on the multiple output voltage values; The third acquisition module is used to acquire the thermal response time of the detector under test based on the curve of the output voltage value changing over time. The output module is used to output the thermal response time.

8. An electronic device, characterized in that, The electronic device includes: a processor, and a memory communicatively connected to the processor; The memory stores computer-executed instructions; The processor executes computer execution instructions stored in the memory to implement the thermal response time acquisition method as described in any one of claims 1-6.

9. A testing system, characterized in that, The testing system includes: a pulse power supply, a testing module, a data acquisition unit, and a processing device; the testing module includes a balanced bridge, the balanced bridge includes a test arm and a comparison arm, the test arm includes a detector under test and a first fixed resistor, the comparison arm includes a second fixed resistor and a variable resistor, the input terminal of the data acquisition unit is connected to the output terminal of the testing module, and the output terminal of the data acquisition unit is connected to the processing device; The processing device is used to perform the thermal response time acquisition method as described in any one of claims 1-6.

10. A computer-readable storage medium, characterized in that, The computer-readable storage medium stores computer-executable instructions, which, when executed by a processor, are used to implement the thermal response time acquisition method as described in any one of claims 1 to 6.

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