Semiconductor ring adhesive waxing process and apparatus

Abstract

The present application relates to a kind of semiconductor ring waxing device, including speed chain pipeline, manipulator, processing substrate, substrate lifting platform, positioning block and infrared heater;The present application also relates to another kind of semiconductor ring waxing process, including semiconductor ring waxing device, further comprising the following steps: 1) operator places clean processing substrate on speed chain pipeline, and processing substrate moves to waxing work station;2) substrate platform air cylinder pushes substrate lifting platform to lift processing substrate, positioning pin in the center of substrate lifting platform is aligned with the positioning sleeve in the center of processing substrate, so that processing substrate is in the center of substrate lifting platform.The semiconductor ring waxing process and its device, by setting substrate lifting platform, positioning pin in the center thereof, facilitate processing substrate to be in the center of substrate lifting platform, and by the positioning of workpiece limiter V and workpiece limiter I, semiconductor workpiece can be in the center of processing substrate, reducing the skill requirement for operator.

Description

Technical Field

[0001] This invention relates to the field of semiconductor processing technology, specifically to a semiconductor ring wax bonding process and apparatus. Background Technology

[0002] Semiconductor processing materials include non-metallic materials such as silicon, ceramics, quartz, and silicon carbide. However, semiconductor processing materials are all brittle materials with high hardness, and the processing technology requirements are very strict. Currently, semiconductor materials are fixed on a processing substrate by melting wax, and then processed by machine tools (the processing substrate is generally made of materials such as quartz, ceramics, and silicon).

[0003] The current process involves placing the entire processing substrate on a heating platform. Once the surface of the substrate reaches 100 degrees Celsius, a strip of wax is evenly applied to the workpiece area. The semiconductor material is then placed on the substrate, and the workpiece is pressed firmly around its edges by hand. The substrate is then allowed to cool, typically naturally or using air cooling. However, this process has several drawbacks: First, it consumes a lot of energy, requiring the mounting plate to be heated to a certain temperature. The substrate is placed on an electric heating plate, and heat is applied from the bottom to the surface of the mounting plate, resulting in inaccurate heating areas. Second, the wax application process is mostly done manually. Manual waxing has several disadvantages: operators rely on intuition to determine the waxing area, leading to a large waxing area and wasted wax in order to ensure the workpiece is fully covered. Third, it's impossible to ensure the workpiece is centered on the substrate, requiring prolonged dial indicator work during CNC machining, demanding high operator skill, and resulting in chipping and low yield. Summary of the Invention

[0004] (a) Technical problems to be solved

[0005] To address the shortcomings of existing technologies, this invention provides a semiconductor ring wax bonding process and apparatus, which has the advantages of improving energy consumption, increasing wax bonding efficiency, and reducing the skill requirements for operators. It solves the problems of high energy consumption, waste of paraffin wax caused by manual wax application, time and labor costs, and the risk of burns.

[0006] (II) Technical Solution

[0007] To achieve the above objectives, the present invention provides the following technical solution: a semiconductor ring wax bonding device, comprising a double-speed chain production line, a robotic arm, a processing substrate, a substrate lifting platform, a positioning block, and an infrared heater;

[0008] The robotic arm is located above the double-speed chain conveyor line, which has more than three processing substrates. The inner side of the double-speed chain conveyor line is equipped with a substrate lifting platform located at the bottom of the processing substrates. Two positioning blocks are movably installed on both sides of the substrate lifting platform. An infrared heater is also provided above the double-speed chain conveyor line.

[0009] Furthermore, the infrared heater can move up and down, which can be achieved by an electric actuator, so that the piston end of the electric actuator is fixed to the infrared heater.

[0010] Furthermore, the double-speed chain conveyor is set on the workbench, a substrate platform cylinder is fixed at the bottom of the substrate lifting platform, the bottom of the substrate platform cylinder is fixed to the workbench, a positioning pin is assembled at the center of the substrate lifting platform, and a positioning sleeve adapted to the positioning pin is provided on the processing substrate.

[0011] Furthermore, the two positioning blocks are the workpiece limiter V and the workpiece limiter, respectively.

[0012] Furthermore, the workbench is also equipped with two rows of cooling nozzles, the substrate lifting platform is located between the two rows of cooling nozzles, and the workbench is also equipped with a control console.

[0013] Furthermore, a semiconductor workpiece can be placed on the processing substrate, and a wax strip can be gripped by the robotic arm.

[0014] A semiconductor ring wax bonding process includes a semiconductor ring wax bonding apparatus and further includes the following steps:

[0015] 1) The operator places the clean processing substrate on the double-speed chain conveyor line, and the processing substrate moves to the waxing station.

[0016] 2) The substrate platform cylinder pushes the substrate lifting platform to lift the processed substrate. The positioning pin in the center of the substrate lifting platform is aligned with the positioning sleeve in the center of the processed substrate, so that the processed substrate is in the center of the substrate lifting platform.

[0017] 3) The operator inputs the diameter according to the product specifications;

[0018] 4) The infrared heater covers the surface of the processing substrate, and can be removed when the surface of the processing substrate is heated to a certain temperature;

[0019] 5) The infrared heater rises, the robotic arm grabs the wax rod, and applies the wax evenly to the surface of the substrate according to the diameter input by the operator;

[0020] 6) Based on the diameter input by the operator, the controller calculates the positioning area of ​​the semiconductor workpiece according to the three-point circle formula, with the center of the substrate lifting platform as the reference. The positioning blocks on both sides of the substrate lifting platform extend out.

[0021] 7) The operator places the heated semiconductor workpiece into the positioning area, places it flat, and rotates it left and right to make it fit better. The workpiece limiter V and workpiece limiter I extend and retract, pushing the semiconductor workpiece and adjusting its position on the processing substrate. Based on the size of the semiconductor workpiece and the values ​​fed back by the sensor, the semiconductor workpiece is positioned at the center of the processing substrate.

[0022] 8) The cooling nozzles at both ends are activated. After the wax has slightly solidified, the positioning block retracts.

[0023] 9) The substrate lifting platform descends, placing the product back onto the double-speed chain conveyor line for continued cooling, and the waxing process is completed.

[0024] Furthermore, in step 1), after the processing substrate is placed on the double-speed conveyor line, the semiconductor workpiece is heated for 2 minutes.

[0025] Furthermore, in step 2), the substrate platform cylinder pushes the substrate lifting platform to lift the processed substrate for 15 seconds.

[0026] Furthermore, the heating time to a certain temperature in step 4) is approximately 60-90 seconds.

[0027] Furthermore, in step 6), the positioning blocks on both sides of the substrate lifting platform are moved to a position near the setting of the size parameters of the semiconductor workpiece, leaving a 1mm gap.

[0028] Furthermore, the waxing station in step 1) is located below the robotic arm.

[0029] (III) Beneficial Effects

[0030] Compared with the prior art, the technical solution of this application has the following beneficial effects:

[0031] 1. The semiconductor ring wax bonding process and apparatus, through the setting of a substrate lifting platform, has a positioning pin at the center, which can be matched with the positioning sleeve on the processing substrate, making it easy to place the processing substrate in the center of the substrate lifting platform. The positioning of the workpiece limiter V and workpiece limiter I ensures that the semiconductor workpiece is in the center of the processing substrate, reducing the skill requirements of the operator; in addition, the accurate positioning means that after the infrared heater descends, it only needs 60-90 seconds to heat up, reducing energy consumption; and the use of a robotic arm to apply wax improves the wax bonding efficiency.

[0032] 2. This semiconductor ring waxing process and device utilizes cooling nozzles at both ends to cool the waxed semiconductor workpiece. Once the wax has slightly solidified, the two positioning blocks retract, solving the scratches and chipping problems caused by traditional dewaxing methods. It ensures uniform wax melting in water, resulting in uniform stress on the workpiece during dewaxing. The fully automated process completely replaces manual labor, saving time and effort, achieving a high dewaxing pass rate, and preventing damage to the semiconductor workpiece. It realizes fully automated and safe dewaxing, improving yield and efficiency. Attached Figure Description

[0033] Figure 1 This is a schematic diagram of the semiconductor ring wax bonding device of the present invention;

[0034] Figure 2 This is a schematic diagram of step 5 of the semiconductor ring wax bonding process of the present invention;

[0035] Figure 3 This is a schematic diagram of step 6 of the semiconductor ring wax bonding process of the present invention;

[0036] Figure 4 This is a schematic diagram of step 7 of the semiconductor ring wax bonding process of the present invention.

[0037] In the diagram: 1. Double-speed chain conveyor, 2. Robotic arm, 3. Substrate lifting platform, 31. Substrate platform cylinder, 4. Positioning block, 41. Workpiece limiter V, 42. Workpiece limiter I, 5. Infrared heater, 6. Semiconductor workpiece, 7. Cooling nozzle, 8. Wax strip, 9. Processing substrate. Detailed Implementation

[0038] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0039] Example 1

[0040] Please see Figure 1-4 The semiconductor ring wax bonding process and apparatus in this embodiment include a double-speed chain production line 1, a robot arm 2, a processing substrate 9, a substrate lifting platform 3, a positioning block 4, and an infrared heater 5.

[0041] The robotic arm 2 is located above the double-speed chain production line 1. More than three processing substrates 9 are placed on the double-speed chain production line 1. The inner side of the double-speed chain production line 1 is equipped with a substrate lifting platform 3 located at the bottom of the processing substrate 9. Two positioning blocks 4 are movably installed on both sides of the substrate lifting platform 3. An infrared heater 5 is also provided above the double-speed chain production line 1.

[0042] In some embodiments, the infrared heater 5 can move up and down, which can be achieved by an electric actuator, so that the piston end of the electric actuator is fixed to the infrared heater 5.

[0043] In some embodiments, the double-speed chain conveyor 1 is set on the workbench, the bottom of the substrate lifting platform 3 is fixed with a substrate platform cylinder 31, the bottom of the substrate platform cylinder 31 is fixed with the workbench, a positioning pin is installed at the center of the substrate lifting platform 3, and a positioning sleeve that matches the positioning pin is provided on the processing substrate 9.

[0044] In some embodiments, the two positioning blocks 4 are workpiece limiter V41 and workpiece limiter 42, respectively.

[0045] In some embodiments, the workbench is also equipped with two rows of cooling nozzles 7, the substrate lifting platform 3 is located between the two rows of cooling nozzles 7, and the workbench is also equipped with a control console.

[0046] In some embodiments, a semiconductor workpiece 6 may be placed on the processing substrate 9, and a wax strip 8 may be gripped by the robotic arm 2.

[0047] A semiconductor ring wax bonding process includes a semiconductor ring wax bonding apparatus and further includes the following steps:

[0048] 1) The operator places the clean processing substrate 9 on the double-speed chain conveyor line 1, and the processing substrate 9 moves to the waxing station.

[0049] 2) The substrate platform cylinder 31 pushes the substrate lifting platform 3 to lift the processing substrate 9. The positioning pin in the center of the substrate lifting platform 3 is aligned with the positioning sleeve in the center of the processing substrate 9, so that the processing substrate 9 is in the center of the substrate lifting platform 3.

[0050] 3) The operator inputs the diameter according to the product specifications;

[0051] 4) The infrared heater 5 covers the surface of the processing substrate 9, and can be removed when the surface of the processing substrate 9 is heated to a certain temperature;

[0052] 5) The infrared heater 5 is raised, the robotic arm 2 grabs the wax rod 8, and applies the wax evenly to the surface of the processing substrate 9 according to the diameter input by the operator.

[0053] 6) Based on the diameter input by the operator, the controller calculates the positioning area of ​​the semiconductor workpiece 6 according to the three-point circle formula, with the center of the substrate lifting platform 3 as the reference. The positioning blocks 4 on both sides of the substrate lifting platform 3 extend out.

[0054] 7) The operator places the heated semiconductor workpiece 6 into the positioning area, places it flat, and rotates it left and right to make it fit better. The workpiece limiter V41 and workpiece limiter I42 extend and retract, pushing the semiconductor workpiece 6 and adjusting the position of the semiconductor workpiece 6 on the processing substrate 9. Based on the size of the semiconductor workpiece 6 and the value fed back by the sensor, the semiconductor workpiece 6 is positioned at the center of the processing substrate 9.

[0055] 8) The cooling nozzles 7 at both ends are activated. After the wax has slightly solidified, the positioning block 4 retracts.

[0056] 9) The substrate lifting platform 3 descends and places the product back onto the double-speed chain conveyor line 1 to continue cooling, and the waxing process is completed.

[0057] In some embodiments, after the processing substrate 9 in step 1) is placed on the double-speed conveyor line 1, the semiconductor workpiece 6 is heated for 2 minutes.

[0058] In some embodiments, in step 2), the substrate platform cylinder 31 pushes the substrate lifting platform 3 to lift the processed substrate 9 for 15 seconds.

[0059] In some embodiments, the heating time to a certain temperature in step 4) is approximately 60 seconds.

[0060] In some embodiments, the positioning blocks 4 on both sides of the substrate lifting platform 3 in step 6) are moved to a position near the size parameters of the semiconductor workpiece 6, leaving a 1mm gap.

[0061] In some embodiments, the waxing station in step 1) is located below the robotic arm 2.

[0062] The beneficial effects of the above embodiments are:

[0063] The substrate lifting platform 3 has a positioning pin at its center, which can be matched with the positioning sleeve on the processing substrate 9, making it easy to position the processing substrate 9 at the center of the substrate lifting platform 3. The positioning of the workpiece limiter V and the workpiece limiter I ensures that the semiconductor workpiece 6 can be positioned at the center of the processing substrate 9, reducing the skill requirements for operators. In addition, the accurate positioning means that after the infrared heater 5 descends, it only needs 60-90 seconds to heat up, reducing energy consumption. The use of the robotic arm 2 to apply wax improves the wax adhesion efficiency.

[0064] Example 2

[0065] Please see Figure 1-4 The semiconductor ring wax bonding device in this embodiment includes a double-speed chain production line 1, a robot arm 2, a processing substrate 9, a substrate lifting platform 3, a positioning block 4, and an infrared heater 5.

[0066] The robotic arm 2 is located above the double-speed chain production line 1. More than three processing substrates 9 are placed on the double-speed chain production line 1. The inner side of the double-speed chain production line 1 is equipped with a substrate lifting platform 3 located at the bottom of the processing substrate 9. Two positioning blocks 4 are movably installed on both sides of the substrate lifting platform 3. An infrared heater 5 is also provided above the double-speed chain production line 1.

[0067] In some embodiments, the infrared heater 5 can move up and down, which can be achieved by an electric actuator, so that the piston end of the electric actuator is fixed to the infrared heater 5.

[0068] In some embodiments, the double-speed chain conveyor 1 is set on the workbench, the bottom of the substrate lifting platform 3 is fixed with a substrate platform cylinder 31, the bottom of the substrate platform cylinder 31 is fixed with the workbench, a positioning pin is installed at the center of the substrate lifting platform 3, and a positioning sleeve that matches the positioning pin is provided on the processing substrate 9.

[0069] In some embodiments, the two positioning blocks 4 are workpiece limiter V41 and workpiece limiter 42, respectively.

[0070] In some embodiments, the workbench is also equipped with two rows of cooling nozzles 7, the substrate lifting platform 3 is located between the two rows of cooling nozzles 7, and the workbench is also equipped with a control console.

[0071] In some embodiments, a semiconductor workpiece 6 may be placed on the processing substrate 9, and a wax strip 8 may be gripped by the robotic arm 2.

[0072] A semiconductor ring wax bonding process includes a semiconductor ring wax bonding apparatus and further includes the following steps:

[0073] 1) The operator places the clean processing substrate 9 on the double-speed chain conveyor line 1, and the processing substrate 9 moves to the waxing station.

[0074] 2) The substrate platform cylinder 31 pushes the substrate lifting platform 3 to lift the processing substrate 9. The positioning pin in the center of the substrate lifting platform 3 is aligned with the positioning sleeve in the center of the processing substrate 9, so that the processing substrate 9 is in the center of the substrate lifting platform 3.

[0075] 3) The operator inputs the diameter according to the product specifications;

[0076] 4) The infrared heater 5 covers the surface of the processing substrate 9, and can be removed when the surface of the processing substrate 9 is heated to a certain temperature;

[0077] 5) The infrared heater 5 is raised, the robotic arm 2 grabs the wax rod 8, and applies the wax evenly to the surface of the processing substrate 9 according to the diameter input by the operator.

[0078] 6) Based on the diameter input by the operator, the controller calculates the positioning area of ​​the semiconductor workpiece 6 according to the three-point circle formula, with the center of the substrate lifting platform 3 as the reference. The positioning blocks 4 on both sides of the substrate lifting platform 3 extend out.

[0079] 7) The operator places the heated semiconductor workpiece 6 into the positioning area, places it flat, and rotates it left and right to make it fit better. The workpiece limiter V41 and workpiece limiter I42 extend and retract, pushing the semiconductor workpiece 6 and adjusting the position of the semiconductor workpiece 6 on the processing substrate 9. Based on the size of the semiconductor workpiece 6 and the value fed back by the sensor, the semiconductor workpiece 6 is positioned at the center of the processing substrate 9.

[0080] 8) The cooling nozzles 7 at both ends are activated. After the wax has slightly solidified, the positioning block 4 retracts.

[0081] 9) The substrate lifting platform 3 descends and places the product back onto the double-speed chain conveyor line 1 to continue cooling, and the waxing process is completed.

[0082] In some embodiments, after the processing substrate 9 in step 1) is placed on the double-speed conveyor line 1, the semiconductor workpiece 6 is heated for 2 minutes.

[0083] In some embodiments, in step 2), the substrate platform cylinder 31 pushes the substrate lifting platform 3 to lift the processed substrate 9 for 15 seconds.

[0084] In some embodiments, the heating time to a certain temperature in step 4) is approximately 90 seconds.

[0085] In some embodiments, the positioning blocks 4 on both sides of the substrate lifting platform 3 in step 6) are moved to a position near the size parameters of the semiconductor workpiece 6, leaving a 1mm gap.

[0086] In some embodiments, the waxing station in step 1) is located below the robotic arm 2.

[0087] The beneficial effects of the above embodiments are:

[0088] The cooling nozzles 7 at both ends are used to cool the waxed semiconductor workpiece 6. After the wax solidifies slightly, the two positioning blocks 4 retract, which solves the problems of scratches and chipping caused by traditional dewaxing methods. It ensures that the wax melts evenly in water and that the stress on the workpiece is uniform during dewaxing. The fully automated process completely replaces manual labor, saving time and effort, and has a high dewaxing qualification rate without damaging the semiconductor workpiece. It achieves fully automatic and safe dewaxing, improves the yield rate, and enhances efficiency.

[0089] It should be noted that, in this document, relational terms such as "first" and "second" are used merely to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes the element.

[0090] Although embodiments of the invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made to these embodiments without departing from the principles and spirit of the invention, the scope of which is defined by the appended claims and their equivalents.

Claims

1. A semiconductor ring wax bonding device, comprising a high-speed conveyor belt (1), a robotic arm (2), a processing substrate (9), a substrate lifting platform (3), a positioning block (4), and an infrared heater (5), characterized in that: The robotic arm (2) is located above the double-speed chain production line (1). More than three processing substrates (9) are placed on the double-speed chain production line (1). A substrate lifting platform (3) located at the bottom of the processing substrate (9) is installed on the inner side of the double-speed chain production line (1). Two positioning blocks (4) are movably installed on both sides of the substrate lifting platform (3). An infrared heater (5) is also provided above the double-speed chain production line (1). The infrared heater (5) can move up and down, which is achieved by an electric push rod, so that the piston end of the electric push rod is fixed to the infrared heater (5); The double-speed chain production line (1) is set on the workbench. The bottom of the substrate lifting platform (3) is fixed with a substrate platform cylinder (31). The bottom of the substrate platform cylinder (31) is fixed to the workbench. A positioning pin is installed at the center of the substrate lifting platform (3). A positioning sleeve that matches the positioning pin is provided on the processing substrate (9). The workbench is equipped with two rows of cooling nozzles (7), the substrate lifting platform (3) is located between the two rows of cooling nozzles (7), and the workbench is also equipped with a control console. The two positioning blocks (4) are workpiece limiter V (41) and workpiece limiter I (42), respectively; Semiconductor workpieces (6) can be placed on the processing substrate (9), and wax strips (8) can be gripped on the robotic arm (2).

2. A semiconductor ring wax bonding process, comprising the semiconductor ring wax bonding apparatus according to claim 1, further comprising the following steps: 1) The operator places the clean processing substrate (9) on the double-speed chain conveyor (1), and the processing substrate (9) is moved to the waxing station; 2) The substrate platform cylinder (31) pushes the substrate lifting platform (3) to lift the processing substrate (9). The positioning pin in the center of the substrate lifting platform (3) is aligned with the positioning sleeve in the center of the processing substrate (9), so that the processing substrate (9) is in the center of the substrate lifting platform (3). 3) The operator inputs the diameter based on the semiconductor workpiece (6); 4) The infrared heater (5) covers the surface of the processing substrate (9), and can be removed when the surface of the processing substrate (9) is heated to a certain temperature; 5) The infrared heater (5) rises, the robot (2) grabs the wax strip (8), and applies the wax evenly to the surface of the processing substrate (9) according to the diameter input by the operator; 6) Based on the diameter input by the operator, the controller calculates the positioning area of ​​the semiconductor workpiece (6) according to the three-point circle formula, with the center of the substrate lifting platform (3) as the reference. The positioning blocks (4) on both sides of the substrate lifting platform (3) extend out. 7) The operator places the heated semiconductor workpiece (6) into the positioning area, places it flat, rotates it left and right to make it fit better, and the workpiece limiter V (41) and workpiece limiter I (42) extend and retract to push the semiconductor workpiece (6) and adjust the position of the semiconductor workpiece (6) on the processing substrate (9). Based on the size of the semiconductor workpiece (6) and the value fed back by the sensor, the semiconductor workpiece (6) is positioned at the center of the processing substrate (9). 8) The two rows of cooling nozzles (7) are activated. After the wax has solidified slightly, the positioning block (4) retracts. 9) The substrate lifting platform (3) descends and puts the semiconductor workpiece (6) back onto the double-speed chain production line (1) to continue cooling, and the waxing process is completed.

3. The semiconductor ring wax bonding process according to claim 2, characterized in that: After the processing substrate (9) in step 1) is placed on the double-speed chain production line (1), the semiconductor workpiece (6) is heated for 2 minutes.

4. The semiconductor ring wax bonding process according to claim 2, characterized in that: In step 2), the substrate platform cylinder (31) pushes the substrate lifting platform (3) to lift the processed substrate (9) for 15 seconds.

5. The semiconductor ring wax bonding process according to claim 2, characterized in that: The heating time to a certain temperature in step 4) is 60-90 seconds.

6. The semiconductor ring wax bonding process according to claim 2, characterized in that: In step 6), the positioning blocks (4) on both sides of the substrate lifting platform (3) are moved to a position close to the size parameters of the semiconductor workpiece (6), with a gap of 1mm.

7. The semiconductor ring wax bonding process according to claim 2, characterized in that: The waxing station in step 1) is located below the robot arm (2).

Images