Method for quantitative control of reactants of an atomic deposition apparatus

Abstract

The application discloses a reactant quantitative control method and device of an atomic deposition equipment, a medium and an electronic equipment. The method comprises the following steps: setting a differential pressure cumulative sum threshold value corresponding to each reactant, and when no reactant is input, inputting a carrier gas with a set flow rate, and obtaining a pressure at an air inlet pipeline as a first initial pressure; for each reactant, by sequentially opening a valve corresponding to each reactant, obtaining a pressure of the current air inlet pipeline, and calculating a differential pressure cumulative sum value corresponding to the current reactant according to the first initial pressure and the pressure of the air inlet pipeline corresponding to each reactant; if the differential pressure cumulative sum value corresponding to the current reactant is equal to the differential pressure cumulative sum threshold value set for the current reactant, closing the valve corresponding to the current reactant, so as to realize quantitative control of the reactant. The technical scheme provided by the application can improve the accuracy of quantitative control of the reactant, and reduce the consumption of the reactant, thereby improving the film forming consistency.

Description

TECHNICAL FIELD

[0001] The present application belongs to the technical field of quantitative control, and particularly relates to a reactant quantitative control method and device of an atomic deposition device, a medium and an electronic device. BACKGROUND

[0002] Currently, the atomic deposition plating process controls the input amount of reactants by setting the valve opening time of a reactant source bottle. Since the valve is opened for a short time each time, the amount of reactant flowing out is small, the amount of reactant flowing out is not easy to measure, and the amount of reactant flowing out is affected by the fluctuation of the cavity pressure, resulting in fluctuation of the amount of reactant flowing out each time, which is not easy to control. Therefore, an accurate method for improving the quantitative control of reactants is needed. SUMMARY

[0003] Embodiments of the present application provide a reactant quantitative control method and device of an atomic deposition device, a medium and an electronic device, which can improve the accuracy of quantitative control of reactants and reduce the amount of reactants, thereby improving the consistency of film formation.

[0004] Other characteristics and advantages of the present application will become apparent from the following detailed description, or will be learned by practice of the present application.

[0005] According to a first aspect of the embodiments of the present application, a reactant quantitative control method of an atomic deposition device is provided, characterized in that the method comprises: setting a differential pressure cumulative sum threshold value corresponding to each reactant, and when no reactant is input, inputting a carrier gas with a set flow rate, and obtaining the pressure at the inlet pipeline as a first initial pressure; for each reactant, by sequentially opening the valve corresponding to each reactant, obtaining the pressure of the current inlet pipeline, and calculating the differential pressure cumulative sum value corresponding to the current reactant according to the first initial pressure and the pressure of the inlet pipeline corresponding to each reactant; if the differential pressure cumulative sum value corresponding to the current reactant is equal to the set differential pressure cumulative sum threshold value of the current reactant, closing the valve corresponding to the current reactant to achieve quantitative control of the reactant.

[0006] In some embodiments of the present application, based on the foregoing scheme, the setting of the differential pressure cumulative sum threshold value corresponding to each reactant comprises: setting a differential pressure cumulative sum threshold value corresponding to any one reactant, and obtaining a reaction proportionality coefficient corresponding to each reactant according to a chemical reaction equation; and setting the differential pressure cumulative sum threshold value corresponding to each reactant according to the set differential pressure cumulative sum threshold value corresponding to any one reactant and the reaction proportionality coefficient.

[0007] In some embodiments of the present application, based on the aforementioned scheme, the method further includes: after achieving quantitative control of the reactants, obtaining the non-uniformity of the thin film in the reaction chamber; and adjusting the differential pressure accumulation threshold corresponding to each reactant based on the non-uniformity to reduce the non-uniformity of the thin film in the reaction chamber.

[0008] In some embodiments of the present application, based on the aforementioned scheme, adjusting the differential pressure accumulation threshold corresponding to each reactant according to the non-uniformity to reduce the non-uniformity of the thin film in the reaction chamber includes: setting an equally spaced gradient, and adjusting the differential pressure accumulation threshold corresponding to each reactant according to the equally spaced gradient to adjust the non-uniformity of the thin film in the reaction chamber, so as to minimize the non-uniformity of the thin film.

[0009] In some embodiments of the present application, based on the aforementioned scheme, the obtaining of the current pressure of the air inlet pipeline by sequentially opening the valves corresponding to the reactants includes: obtaining the current pressure of the air inlet pipeline through a vacuum gauge at the air inlet of the reaction chamber.

[0010] In some embodiments of the present application, based on the aforementioned scheme, after obtaining the current pressure of the air intake pipe by opening the valves corresponding to each reactant in sequence, the method further includes: after the valve corresponding to the current reactant is opened, obtaining the air intake pipe pressure once every preset time until the valve corresponding to the current reactant is closed.

[0011] The present application pre-sets the differential pressure accumulation threshold corresponding to each reactant to perform quantitative control of each reactant according to the set standard. Before quantitative control of each reactant is performed, the pressure in the current intake pipe can be obtained as the first initial pressure. During the quantitative control of the reactants, the differential pressure accumulation value corresponding to each reactant is calculated based on the first initial pressure. If the differential pressure accumulation value corresponding to each reactant is equal to the differential pressure accumulation threshold set for each reactant, the valve corresponding to each reactant is closed to achieve quantitative control of each reactant.

[0012] Before the valve corresponding to the reactant is opened, a carrier gas can be purged to purge other reactants and impurities in the reaction chamber to the outside of the reaction chamber to improve the consistency of film formation. The pressure of the air inlet pipe when the reactant valve is opened is used as the current reactant corresponding pressure, and the differential pressure accumulation value corresponding to each reactant is calculated by the first initial pressure and the current reactant corresponding pressure. In addition, in order to obtain a film with a minimum unevenness in the reaction chamber, an equidistant gradient can be set, and the differential pressure accumulation threshold corresponding to each reactant can be adjusted according to the equidistant gradient, thereby improving the consistency of film formation. Based on the method described in this application, the accuracy of the quantitative control of the reactants can be improved, and the amount of the reactants can be reduced, thereby improving the consistency of film formation.

[0013] According to a second aspect of the embodiments of the present application, a reactant quantitative control device of an atomic deposition device is provided, characterized in that the device comprises: a setting unit configured to set a differential pressure cumulative value threshold corresponding to each reactant, and to introduce a carrier gas with a set flow rate when no reactant is introduced, and to obtain a pressure at an inlet pipeline as a first initial pressure; a calculation unit configured to, for each reactant, obtain a pressure at the inlet pipeline by sequentially opening valves corresponding to each reactant, and to calculate a differential pressure cumulative value corresponding to the current reactant according to the first initial pressure and the pressure at the inlet pipeline corresponding to each reactant; and a judgment unit configured to, if the differential pressure cumulative value corresponding to the current reactant is equal to the differential pressure cumulative value threshold set for the current reactant, close the valve corresponding to the current reactant, so as to achieve quantitative control of the reactant.

[0014] According to a third aspect of the embodiments of the present application, a computer readable storage medium is provided, characterized in that the computer readable storage medium stores at least one program code, and the at least one program code is loaded and executed by a processor to implement the operations performed by the method.

[0015] According to a fourth aspect of the embodiments of the present application, an electronic device is provided, characterized in that the electronic device comprises one or more processors and one or more memories, and the one or more memories store at least one program code, and the at least one program code is loaded and executed by the one or more processors to implement the operations performed by the method.

[0016] The advantages of the above-mentioned second aspect to fourth aspect and each embodiment of the first aspect are described above, and will not be repeated here.

[0017] It should be understood that the above general description and the following detailed description are only exemplary and explanatory, and cannot limit the present application. BRIEF DESCRIPTION OF DRAWINGS

[0018] The accompanying drawings, which are incorporated into and form part of the specification, illustrate embodiments consistent with the present application and, together with the description, serve to explain the principles of the application. Obviously, the drawings in the following description are only some embodiments of the present application, and other drawings can be obtained by those skilled in the art without creative labor. In the drawings:

[0019] Figure 1 The structure of the atomic deposition device in the embodiments of the present application is shown;

[0020] Figure 2 The flowchart of the reactant quantitative control method of the atomic deposition device in the embodiments of the present application is shown;

[0021] Figure 3 A schematic structural diagram of a reactant quantitative control device for an atomic deposition device in an embodiment of the present application is shown;

[0022] Figure 4 A schematic structural diagram of an electronic device in an embodiment of the present application is shown. DETAILED DESCRIPTION

[0023] The following will be combined with the accompanying drawings in the embodiments of this application to clearly and completely describe the technical solutions in the embodiments of this application. Obviously, the embodiments described are only part of the embodiments of this application, not all of the embodiments. Based on the embodiments of this application, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of this application.

[0024] In addition, described feature, structure or characteristic can be combined in one or more embodiments in any suitable manner.In the following description, many specific details are provided so as to provide a full understanding of the embodiments of the present application. However, it will be appreciated by those skilled in the art that the technical scheme of the present application can be put into practice without one or more of the specific details, or other methods, components, devices, steps etc. can be adopted. In other cases, known methods, devices, implementations or operations are not shown or described in detail to avoid blurring the various aspects of the application.

[0025] The block diagrams shown in the accompanying drawings are merely functional entities and do not necessarily correspond to physically separate entities. That is, these functional entities may be implemented in software, in one or more hardware modules or integrated circuits, or in different networks and / or processor devices and / or microcontroller devices.

[0026] The flowcharts shown in the accompanying drawings are for illustrative purposes only and do not necessarily include all contents and operations / steps, nor must they be executed in the order described. For example, some operations / steps may be decomposed, while others may be combined or partially combined. Therefore, the actual execution order may vary depending on the actual situation.

[0027] Figure 1 FIG1 shows a schematic diagram of the atomic deposition device structure 100 in an embodiment of the present application. Figure 1 The atomic deposition equipment includes an MFC flow meter, valve I, valve II, valve III, a reaction chamber, a vacuum pump, a controller, a vacuum gauge, a reactant B source bottle, a reactant A source bottle, an air inlet pipe, and a wire.

[0028] The MFC flowmeter is installed at the carrier gas inlet end of the inlet manifold. The source bottles for reactants A and B are fixed to vertical branches below the inlet manifold. Valve I is installed on the vertical inlet manifold for the source bottle for reactant A, and valve II is installed on the vertical inlet manifold for the source bottle for reactant B. A vacuum gauge is installed on a vertical branch below the inlet manifold near the reaction chamber's inlet port, and valve III is installed on the vertical inlet manifold connected to the vacuum gauge. The measurement signals from the MFC flowmeter and vacuum gauge are transmitted to the controller via wires. The controller controls the opening and closing of valves I, II, and III via wires. The end of the horizontal inlet manifold is connected to the reaction chamber's inlet port, and the reaction chamber's outlet is connected to a vacuum pump. Except for the controller, all other components are sealed via the inlet manifold.

[0029] The atomic deposition equipment structure in the embodiment of the present application performs pressure detection in the air inlet pipe of the cavity, which can eliminate the problem of pressure measurement errors caused by uneven air pressure distribution in the reaction cavity and the pressure at the cavity outlet being affected by the vacuum pump.

[0030] Therefore, before opening valves I and II, the carrier gas flow rate is controlled by the MFC flowmeter. The carrier gas flows into the reaction chamber through the inlet pipe. The current pressure in the inlet pipe is measured using a vacuum gauge and used as the initial first pressure. Then, valve I is opened, allowing reactant A to flow into the inlet pipe. The vacuum gauge measures the current pressure in the inlet pipe in real time. Based on the initial pressure and the current pressure in the inlet pipe, the cumulative differential pressure of the reactants is calculated. When the set differential pressure cumulative threshold is reached, the controller controls valve I to close. Once reactant A has been introduced, the reaction chamber is purged with carrier gas for a set time.

[0031] Similarly, valve II is opened, allowing reactant B to flow into the reaction chamber. By acquiring the initial pressure and the current pressure in the inlet pipe in real time, the controller calculates the cumulative differential pressure in the inlet pipe. When the cumulative differential pressure reaches the set threshold, the controller closes valve II. Reactant B is introduced, and the reaction chamber is purged with carrier gas for the set time.

[0032] Reactants A and B are introduced into the reaction chamber to undergo chemical adsorption, and a layer of film is grown after the reaction. The growth of the multilayer film is completed by introducing and purging reactants A and B multiple times.

[0033] If the cumulative pressure difference corresponding to reactant A and reactant B is equal to the set cumulative pressure difference threshold, it means that the flow rate of reactant A and reactant B has met the experimental requirements. The above process of controlling the flow rate of reactant A and reactant B is repeated until the number of reaction cycles reaches the process setting value, and the film growth process ends.

[0034] The following is a detailed description of this application:

[0035] Figure 2 The flowchart of the reactant quantitative control method of the atomic deposition device in the embodiment of the present application is shown. The reactant quantitative control method of the atomic deposition device can be executed by a device with a computing and processing function, such as a reactant quantitative control device of the atomic deposition device. Figure 2 As shown, the reactant quantitative control method of the atomic deposition device includes at least steps 210 to 250, which are described in detail as follows:

[0036] In step 210, a differential pressure accumulation threshold corresponding to each reactant is set, and when no reactant is introduced, a carrier gas of a set flow rate is introduced to obtain the pressure at the air inlet pipe as the first initial pressure.

[0037] In the present application, the atomic deposition equipment usually controls the amount of reactants introduced by quantitatively controlling the opening time of the valves corresponding to the reactants. Under the influence of the cavity pressure, the quantitative control of each reactant is often inaccurate, resulting in inconsistent uniformity of the film after the atomic deposition experiment. Therefore, in the present application, the differential pressure accumulation threshold corresponding to each reactant can be pre-set. In the process of reactants flowing into the reaction chamber, when the differential pressure accumulation value corresponding to each reactant is equal to the preset differential pressure accumulation threshold, it means that each reactant has achieved quantitative control. At the same time, the pressure in the current air inlet pipe is obtained, and the differential pressure accumulation value corresponding to each reactant is calculated through the first initial pressure.

[0038] In one embodiment of the present application, setting the differential pressure accumulation threshold corresponding to each reactant may specifically include steps 211 to 212:

[0039] In step 211 , a differential pressure accumulation threshold corresponding to any reactant is set, and a reaction proportional coefficient corresponding to each reactant is obtained according to a chemical reaction equation.

[0040] Step 212: Set the pressure differential accumulation threshold corresponding to each reactant according to the set pressure differential accumulation threshold corresponding to any one of the reactants and the reaction proportional coefficient.

[0041] In this application, according to the actual needs of the experiment, a variety of reactants are required to participate in the reaction in the reaction chamber. The reaction proportional coefficients corresponding to the reactants need to be determined based on the actual chemical reaction equation. It is understandable that after determining the differential pressure accumulation threshold corresponding to any reactant in the chemical reaction equation, the differential pressure accumulation threshold corresponding to each reactant in the chemical reaction equation can be obtained.

[0042] Continue to refer to Figure 2In step 230, for each reactant, the current pressure of the intake pipe is obtained by sequentially opening the valve corresponding to each reactant, so as to calculate the cumulative value of the differential pressure corresponding to the current reactant based on the first initial pressure and the pressure of the intake pipe corresponding to each reactant.

[0043] In this application, since there may be multiple types of reactants flowing into the reaction chamber, it is necessary to calculate the differential pressure accumulation value corresponding to each reactant in turn to achieve the effect of precise control. Figure 1 Before the experiment begins, the pressure at the air inlet pipe is obtained when the set flow rate of carrier gas is introduced without the reactant being introduced, and is used as the first initial pressure. After valve I is opened, reactant A flows from the reactant A source bottle into the reaction chamber. At this time, due to the outflow of reactant A, the pressure in the air inlet pipe changes. By obtaining the pressure in the air inlet pipe, the differential pressure value corresponding to reactant A is calculated. When the calculated differential pressure accumulation value corresponding to reactant A is equal to the set differential pressure accumulation threshold corresponding to reactant A, valve I is controlled to be closed by the controller.

[0044] After opening Valve II, reactant B flows from the reactant B source bottle into the reaction chamber. This outflow causes a change in the pressure in the inlet pipe. The pressure in the inlet pipe is measured and the corresponding differential pressure accumulation value for reactant B is calculated. When the calculated differential pressure accumulation value for reactant B equals the set differential pressure accumulation threshold for reactant B, the controller closes Valve II.

[0045] The calculation of the differential pressure cumulative value corresponding to each reactant can be obtained by the differential pressure cumulative value calculation formula, which is as follows:

[0046] △P=T(∑P kT -NP0),k∈(0,N)

[0047] In the differential pressure cumulative value calculation formula, △P is the differential pressure cumulative value corresponding to each reactant, T is the pressure measurement time interval after the valve is opened, P kT is the pressure of the reactants flowing into the air inlet pipe, and P0 is the first initial pressure. It is understandable that because the quantitative control of the reactants in this application is at the atomic level, the flow rate of the reactants is relatively small. Based on this, the pressure can be measured at relatively short time intervals, which can reasonably and conveniently obtain the pressure of the reactants flowing into the air inlet pipe to calculate the cumulative differential pressure value corresponding to each reactant.

[0048] Furthermore, in an embodiment of the present application, when obtaining the pressure difference caused by the current reactant flowing into the chamber, the current pressure of the air inlet pipe can be obtained by a vacuum gauge at the air inlet of the reaction chamber.

[0049] In one embodiment of the present application, after obtaining the current pressure of the air inlet pipeline by sequentially opening the valves corresponding to the reactants, the following steps may be further included:

[0050] Step 231 : After the valve corresponding to the current reactant is opened, the pressure of the air intake pipe is obtained every preset time until the valve corresponding to the current reactant is closed.

[0051] In this application, after the valve corresponding to the current reactant is opened, in order to ensure the accuracy of the flow rate of the current reactant, the intake pipe pressure can be obtained at preset intervals after the valve corresponding to the current reactant is opened until the valve corresponding to the current reactant is closed. In this way, the number of times the differential pressure cumulative value of the current reactant is determined in actual experiments can be reduced while ensuring quantitative control of the current reactant.

[0052] Continue to refer to Figure 2 In step 250, if the differential pressure accumulation value corresponding to the current reactant is equal to the differential pressure accumulation threshold set for the current reactant, the valve corresponding to the current reactant is closed to achieve quantitative control of the reactant.

[0053] In this application, after calculating the differential pressure accumulation value corresponding to each reactant, if the differential pressure accumulation value corresponding to the current reactant is equal to the differential pressure accumulation threshold set for the current reactant, the valve corresponding to the current reactant is closed to achieve quantitative control of the reactant.

[0054] In one embodiment of the present application, the reactant quantitative control method of the atomic deposition device may further include steps 251 to 252:

[0055] Step 251 : After achieving quantitative control of the reactants, obtain the non-uniformity of the thin film in the reaction chamber.

[0056] Step 252: Adjust the differential pressure accumulation threshold corresponding to each reactant according to the non-uniformity to reduce the non-uniformity of the thin film in the reaction chamber.

[0057] In the present application, after achieving quantitative control of the reactants, the completion effect of this atomic deposition experiment can be evaluated by obtaining the non-uniformity of the thin film in the reaction chamber. Since the reactants of the atomic deposition reaction have self-limiting characteristics, if the differential pressure accumulation threshold is set to be small, fewer reactants will be introduced into the cavity, resulting in a small reactant coverage rate of each layer of thin film on the substrate in the reaction chamber, and the film generated after the reaction is completed will be more non-uniform. In summary, after achieving quantitative control of the reactants, if the non-uniformity of the thin film in the reaction chamber cannot meet the experimental requirements, it is necessary to adjust the differential pressure accumulation threshold corresponding to each reactant according to the non-uniformity, thereby reducing the non-uniformity of the thin film in the reaction chamber.

[0058] In one embodiment of the present application, adjusting the differential pressure accumulation threshold corresponding to each reactant according to the non-uniformity to reduce the non-uniformity of the thin film in the reaction chamber may specifically include step 253:

[0059] Step 253 : setting an equidistant gradient and adjusting the differential pressure accumulation threshold corresponding to each reactant according to the equidistant gradient to adjust the non-uniformity of the thin film in the reaction chamber, thereby minimizing the non-uniformity of the thin film.

[0060] In this application, if the amount of reactant coverage on the reaction chamber is low each time the reactants are introduced into the reaction chamber, the differential pressure accumulation threshold corresponding to each reactant needs to be increased to reduce the nonuniformity of the film in the reaction chamber. If the nonuniformity is no longer reduced after adjustment using the equally spaced gradient, the current differential pressure accumulation threshold corresponding to each reactant is the optimal value, and the equally spaced gradient is not added to the differential pressure accumulation threshold, thereby minimizing the nonuniformity of the film.

[0061] The present application pre-sets the differential pressure accumulation threshold corresponding to each reactant to perform quantitative control of each reactant according to the set standard. Before quantitative control of each reactant is performed, the pressure in the current intake pipe can be obtained as the first initial pressure. During the quantitative control of the reactants, the differential pressure accumulation value corresponding to each reactant is calculated based on the first initial pressure. If the differential pressure accumulation value corresponding to each reactant is equal to the differential pressure accumulation threshold set for each reactant, the valve corresponding to each reactant is closed to achieve quantitative control of each reactant.

[0062] Before the valve corresponding to the reactant is opened, a carrier gas can be purged to purge other reactants and impurities in the reaction chamber to the outside of the reaction chamber to improve the consistency of film formation. The pressure of the air inlet pipe when the reactant valve is opened is used as the current reactant corresponding pressure, and the differential pressure accumulation value corresponding to each reactant is calculated by the first initial pressure and the current reactant corresponding pressure. In addition, in order to obtain a film with a minimum unevenness in the reaction chamber, an equidistant gradient can be set, and the differential pressure accumulation threshold corresponding to each reactant can be adjusted according to the equidistant gradient, thereby improving the consistency of film formation. Based on the method described in this application, the accuracy of the quantitative control of the reactants can be improved, and the amount of the reactants can be reduced, thereby improving the consistency of film formation.

[0063] Based on the same inventive concept, the present application also provides a reactant quantitative control device for an atomic deposition device, referring to Figure 3 , the figure shows a schematic structural diagram of the reactant quantitative control device of the atomic deposition equipment in the embodiment of the present application. The quantitative control device 300 includes: a setting unit 301, which is used to set the differential pressure accumulation threshold corresponding to each reactant, and when no reactant is introduced, introduces a set flow of carrier gas to obtain the pressure at the air inlet pipe as the first initial pressure; a calculation unit 302, which is used to obtain the current pressure of the air inlet pipe by opening the valve corresponding to each reactant in sequence for each reactant, so as to calculate the differential pressure accumulation value corresponding to the current reactant based on the first initial pressure and the pressure of the air inlet pipe corresponding to each reactant; a judgment unit 303, which is used to close the valve corresponding to the current reactant if the differential pressure accumulation value corresponding to the current reactant is equal to the differential pressure accumulation threshold set for the current reactant, so as to achieve quantitative control of the reactant.

[0064] For details not disclosed in the embodiments of the device of this application, please refer to the embodiments of the above method of this application.

[0065] Based on the same inventive concept, the present application also provides a computer-readable storage medium, characterized in that at least one program code is stored in the computer-readable storage medium, and the at least one program code is loaded and executed by a processor to implement the operations performed by the described method.

[0066] Based on the same inventive concept, the present application also provides an electronic device, referring to Figure 4 , Figure 4 A schematic structural diagram of an electronic device in an embodiment of the present application is shown.

[0067] The electronic device includes one or more memories 404, one or more processors 402, and at least one computer program (program code) stored in the memory 404 and executable on the processor 402. When the processor 402 executes the computer program, the aforementioned method is implemented.

[0068] wherein, in Figure 4 The bus architecture, represented generally by the bus 400, can include any number of interconnected buses and bridges, the bus 400 linking together various circuitry including the processor(s) 402, represented by the processor 402, and the memory, represented by the memory 404. The bus 400 can also link together various other circuitry, such as peripheral devices, voltage stabilizers and power management circuitry, all of which are well known in the art and thus, not further described herein. The bus interface 405 provides an interface between the bus 400 and the receiver 401 and the transmitter 403. The receiver 401 and the transmitter 403 can be the same element, a transceiver, providing a means for communicating with various other apparatus over a transmission medium. The processor 402 is responsible for managing the bus 400 and general processing, while the memory 404 can be used for storing data used by the processor 402 in executing operations.

[0069] The functions described herein can be implemented in hardware, software executed by a processor, firmware, or any combination thereof. If implemented in software executed by a processor, the functions can be stored on or transferred over as one or more instructions or code on a computer-readable medium. Other examples and implementations are within the scope and spirit of the disclosure and appended claims. For example, due to the nature of software, functions described above can be implemented using software executed by a processor, hardware, firmware, hardwiring, or combinations of any of these. Features implementing functions can also be physically located at various positions, including being distributed such that portions of functions are implemented at different physical locations. Also, as technology evolves, the underlying functions and logic can be implemented by equivalent equivalents.

[0070] In several embodiments provided in the present application, it should be understood that the disclosed technology can be implemented in other ways. Among them, the above-mentioned device embodiments are only schematic, for example, the division of the units can be a logical function division, and actual implementation can have another division mode, for example, a plurality of units or components can be combined or integrated into another system, or some features can be ignored or not executed. Another point, the coupling or direct coupling or communication connection between the displayed or discussed each other can be through some interface, indirect coupling or communication connection between units or modules, which can be electrical or other forms.

[0071] The units described as separate components can or can not be physically separated, and the components of the control device can or can not be physical units, that is, they can be located in one place, or they can be distributed on multiple units. Part or all of the units can be selected according to actual needs to achieve the purpose of the embodiment scheme.

[0072] If the integrated unit is implemented in the form of a software functional unit and sold or used as an independent product, it can be stored in a computer-readable storage medium. Based on this understanding, the technical solution of the present application is essentially or the part that contributes to the prior art or all or part of the technical solution can be embodied in the form of a software product, and the computer software product is stored in a storage medium, including a number of instructions for enabling a computer device (which can be a personal computer, a server or a network device, etc.) to execute all or part of the steps of the method described in each embodiment of the present application. The aforementioned storage medium includes: various media that can store program codes, such as a USB flash drive, a read-only memory (ROM), a random access memory (RAM), a mobile hard disk, a magnetic disk or an optical disk.

[0073] The foregoing is merely an embodiment of the present application and is not intended to limit the present application. Various modifications and variations are possible for those skilled in the art. Any modifications, equivalent substitutions, or improvements made within the spirit and principles of the present application shall be included within the scope of the claims of the present application.

Claims

1. A method for quantitatively controlling reactants in an atomic deposition device, characterized in that: The method comprises: Setting a differential pressure accumulation threshold corresponding to each reactant, and when no reactant is introduced, introducing a set flow rate of carrier gas, and obtaining the pressure at the air inlet pipe as a first initial pressure; For each reactant, the valve corresponding to each reactant is opened in sequence, and the current pressure of the air inlet pipe is obtained using a vacuum gauge at the air inlet of the reaction chamber, so as to calculate the cumulative differential pressure corresponding to the current reactant based on the first initial pressure and the pressure of the air inlet pipe corresponding to each reactant; If the differential pressure accumulation value corresponding to the current reactant is equal to the differential pressure accumulation threshold set for the current reactant, the valve corresponding to the current reactant is closed to achieve quantitative control of the reactant; After achieving quantitative control of the reactants, obtaining the heterogeneity of the film in the reaction chamber; According to the non-uniformity, the differential pressure accumulation threshold corresponding to each reactant is adjusted to reduce the non-uniformity of the thin film in the reaction chamber.

2. The method according to claim 1, characterized in that The step of setting the differential pressure accumulation threshold corresponding to each reactant includes: Set the differential pressure accumulation threshold corresponding to any reactant, and obtain the reaction proportional coefficient corresponding to each reactant based on the chemical reaction equation; The pressure differential accumulation threshold corresponding to each reactant is set according to the set pressure differential accumulation threshold corresponding to any one of the reactants and the reaction proportional coefficient.

3. The method according to claim 1, characterized in that The step of adjusting the differential pressure accumulation threshold corresponding to each reactant according to the non-uniformity to reduce the non-uniformity of the thin film in the reaction chamber includes: An equidistant gradient is set, and according to the equidistant gradient, the differential pressure accumulation threshold corresponding to each reactant is adjusted to adjust the non-uniformity of the film in the reaction chamber, so that the non-uniformity of the film is minimized.

4. The method according to claim 1, wherein After obtaining the current pressure of the air inlet pipe by sequentially opening the valves corresponding to the reactants, the method further includes: After the valve corresponding to the current reactant is opened, the pressure of the air inlet pipe is obtained every preset time until the valve corresponding to the current reactant is closed.

5. A reactant quantitative control device for an atomic deposition device, characterized in that: The device comprises: a setting unit, configured to set a differential pressure accumulation threshold corresponding to each reactant, and to introduce a set flow rate of carrier gas when no reactant is introduced, and obtain the pressure at the air inlet pipe as a first initial pressure; a calculation unit, configured to, for each reactant, sequentially open a valve corresponding to each reactant and obtain a current pressure of the air inlet pipe using a vacuum gauge at the air inlet of the reaction chamber, so as to calculate a cumulative differential pressure corresponding to the current reactant based on the first initial pressure and the pressure of the air inlet pipe corresponding to each reactant; a judgment unit, configured to close the valve corresponding to the current reactant if the differential pressure accumulation value corresponding to the current reactant is equal to the differential pressure accumulation threshold set for the current reactant, so as to achieve quantitative control of the reactant; After achieving quantitative control of the reactants, obtaining the heterogeneity of the film in the reaction chamber; According to the non-uniformity, the differential pressure accumulation threshold corresponding to each reactant is adjusted to reduce the non-uniformity of the thin film in the reaction chamber.

6. A computer-readable storage medium, characterized in that The computer-readable storage medium stores at least one program code, and the at least one program code is loaded and executed by a processor to implement the operations performed by the method according to any one of claims 1 to 4.

7. An electronic device, characterized in that: The electronic device includes one or more processors and one or more memories, wherein the one or more memories store at least one program code, and the at least one program code is loaded and executed by the one or more processors to implement the operations performed by the method according to any one of claims 1 to 4.

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