A vacuum chamber and method for post-dicing wafer activation pretreatment

Abstract

The application provides a vacuum chamber and a method for wafer cutting post-activation pretreatment, which are used for activation pretreatment of a wafer surface after cutting, and the wafer after cutting is in the form of a plurality of chips and is placed on a tape surrounded by a ring-shaped metal frame. The vacuum chamber comprises: an upper electrode plate and a lower electrode plate provided with a radio frequency electrode, the upper electrode plate is clamped in the center of the ring-shaped upper cover plate, the shape and size of the lower electrode plate are consistent with the upper electrode plate on the top surface of the vacuum chamber and cover the area range where the plurality of chips on the tape are located, a quartz ring is sleeved on the outer periphery of the lower electrode plate, and a lifting mechanism is connected to the center of the bottom of the lower electrode plate; a chamber bottom plate and a chamber side wall, the lifting mechanism passes through the chamber bottom plate, a chip transmission channel is opened on the chamber side wall, the wafer after cutting enters and exits the vacuum chamber through the chip transmission channel; and a lifting ring for shielding the chip transmission channel, the lifting ring realizes the opening and closing of the chip transmission channel through lifting.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of semiconductor process equipment, and in particular to a vacuum chamber for wafer activation pretreatment after wafer cutting. BACKGROUND

[0002] In semiconductor process, in order to reduce the annealing temperature required for silicon-silicon fusion bonding to be compatible with CMOS process, the wafer surface is usually activated pretreated. The activation pretreatment of the wafer surface is usually achieved by plasma impinging on the wafer surface, so as to achieve the activation of the wafer surface by using the generated physical or chemical reaction. The activation pretreatment can realize the direct bonding between wafers and improve the bonding strength, avoiding the formation of gaps or voids.

[0003] At the same time, in the semiconductor processing process, a step that must be experienced is to cut the wafer to form multiple chips, and the processed wafer is usually packaged on the tape paper surrounded by a ring-shaped metal frame, and the wafer is cut on it, and the multiple chips (Die) after cutting are placed on the surface of the tape paper. It is easy to understand that compared with before cutting, the overall rigidity of the tape has changed significantly due to the lack of support in the middle position.

[0004] In the prior art, there are many schemes to provide reaction device design for wafer surface activation, but for the wafer after cutting, there is a lack of reaction chamber with targeted design to meet the structural characteristics of the chip packaging, thereby bringing inconvenience to the surface activation work of the multiple chips formed after wafer cutting.

[0005] In order to overcome the above-mentioned defects existing in the prior art, the technical field urgently needs a vacuum chamber for wafer activation pretreatment after wafer cutting, which customizes the corresponding support and reaction device according to the packaging characteristics of the multiple chips formed after cutting the wafer to meet the use requirements of the chip surface activation pretreatment. SUMMARY

[0006] The following presents a simplified summary of one or more aspects in order to provide a basic understanding of such aspects. This summary is not an extensive overview of all contemplated aspects, and is intended to neither identify key or critical elements of all aspects nor delineate the scope of any or all aspects. Its sole purpose is to present some concepts of one or more aspects in a simplified form as a prelude to the more detailed description that is presented later.

[0007] In order to overcome the above-mentioned defects of the prior art, the present application provides a vacuum chamber for wafer cutting post-activation pretreatment, which is used for activation pretreatment of a wafer surface after cutting, and the wafer after cutting is placed on a tape in the form of a plurality of chips surrounded by a ring-shaped metal frame, and the vacuum chamber comprises: an upper pole plate and a lower pole plate provided with a radio frequency electrode, the upper pole plate is clamped in the center of the ring-shaped upper cover plate, and the lower surface of the upper pole plate and the upper cover plate jointly constitute the top surface of the vacuum chamber, the shape and size of the lower pole plate are consistent with the upper pole plate of the top surface of the vacuum chamber and cover the area range where the plurality of chips on the tape are located, the outer periphery of the lower pole plate is sleeved with a quartz ring, which is used for containing the metal frame during the activation reaction to prevent abnormal discharge of the lower surface thereof, and a lifting mechanism is connected to the bottom center of the lower pole plate to drive the wafer after cutting to move up and down; a chamber bottom plate and a chamber side wall, the lifting mechanism passes through the chamber bottom plate to control the lifting of the lower pole plate inside the vacuum chamber, the chamber side wall is provided with a wafer transfer channel, the wafer after cutting enters and exits the vacuum chamber through the wafer transfer channel; and a lifting ring for shielding the wafer transfer channel, the lifting ring realizes the opening and closing of the wafer transfer channel through lifting.

[0008] Preferably, in an embodiment of the present application, the inner periphery of the upper cover plate is provided with quartz glass, the quartz glass covers all the contact parts of the upper pole plate and the upper cover plate, the contact surface of the upper pole plate and the quartz glass is provided with an annular groove, and the quartz glass is also provided with uniformly distributed air holes at the corresponding position of the annular groove to guide the gas entering the annular groove into the inside of the vacuum chamber.

[0009] Preferably, in an embodiment of the present application, the outer periphery of the chamber bottom plate is also provided with a plurality of quartz support columns, the radial position of the quartz support columns corresponds to the edge of the metal frame and is located outside the lower pole plate, and the quartz support columns are used for containing the metal frame before the activation reaction starts or after the activation reaction ends.

[0010] Preferably, in an embodiment of the present application, the top of the quartz support column is provided with a stepped protrusion to support the metal frame.

[0011] Preferably, in an embodiment of the present application, the vacuum chamber is also provided with a quartz cover plate for covering the upper surface of the metal frame, and the quartz cover plate also covers the quartz support columns and the quartz ring outside the outer periphery of the lower pole plate in width.

[0012] Preferably, in an embodiment of the present application, the outer periphery of the top of the quartz support column is provided with a groove, and the inner and outer peripheries of the quartz cover plate are clamped in the inner periphery of the metal frame and the groove, respectively.

[0013] Preferably, in an embodiment of the present application, the lifting ring is made of metal material, and the chamber bottom plate is also provided with an annular groove at the position corresponding to the lifting ring to accommodate the lowered lifting ring.

[0014] Preferably, in an embodiment of the present application, a shielding cover is further provided above the upper electrode plate to cover the upper electrode plate.

[0015] Preferably, in an embodiment of the present application, a quartz base plate is further provided to cover the upper surface of the chamber base plate and the side periphery of the lifting mechanism hole.

[0016] Preferably, in an embodiment of the present application, a gas pipeline is further provided outside the vacuum chamber, which is connected to the annular groove to introduce gas into the annular groove.

[0017] Another aspect of the present application further provides a method for activation pretreatment of a wafer after cutting, which uses the vacuum chamber described above, the outer periphery of the chamber base plate is further provided with a plurality of quartz support columns, which correspond to the edges of the metal frame in the radial direction and are located outside the lower electrode plate to hold the metal frame before or after the activation reaction starts, a quartz cover plate is further provided in the vacuum chamber to cover the upper surface of the metal frame, the quartz cover plate further covers the quartz support columns and the quartz ring in the outer periphery of the lower electrode plate in width, the activation pretreatment method comprises: sending the cut wafer into the vacuum chamber through the wafer conveying channel and placing the metal frame on the quartz support columns; the lifting ring is raised to block the wafer conveying channel, the lower electrode plate is raised to support the cut wafer; the quartz cover plate is installed to cover the upper surface of the metal frame; reaction gas is introduced, the upper electrode plate and the lower electrode plate are powered on, the lower electrode plate is lifted to adjust the distance between the electrodes for activation reaction; the power is turned off after the reaction is completed, the lower electrode plate is lowered to make the metal frame fall on the quartz support columns again; and the lifting ring is lowered to send the cut wafer out of the vacuum chamber. BRIEF DESCRIPTION OF DRAWINGS

[0018] The above features and advantages of the present application can be better understood by reading the following detailed description of embodiments of the present application in conjunction with the drawings, in which: In the drawings, components are not necessarily drawn to scale, and components of similar or identical function or structure can have the same or similar reference numbers.

[0019] Figure 1 is a packaging device structure diagram of a plurality of chips of a wafer after cutting in the prior art;

[0020] Figure 2 is a device structure diagram of a vacuum chamber for activation pretreatment of a wafer after cutting according to an embodiment of the present application;

[0021] Figure 3 is a device structure diagram of an upper electrode plate and an upper cover plate in a vacuum chamber according to an embodiment of the present application;

[0022] Figure 4Figure 1 is a schematic diagram of a device structure of a lower electrode plate and a bottom plate of a vacuum chamber according to an embodiment of the present application;

[0023] Figure 5 Figure 2 is a schematic diagram of a device structure of a quartz support column in a vacuum chamber according to an embodiment of the present application;

[0024] Figure 6 Figure 3 is a schematic diagram of a device structure of a lower electrode plate quartz ring in a vacuum chamber according to an embodiment of the present application; and

[0025] Figure 7 Figure 4 is a schematic diagram of a device structure of a vacuum chamber wafer transfer passage and a lifting ring according to an embodiment of the present application.

[0026] For the sake of clarity, a brief description of the reference numerals given below is provided:

[0027] 101 annular metal frame

[0028] 102 adhesive tape

[0029] 103 chip

[0030] 201 upper electrode plate

[0031] 202 lower electrode plate

[0032] 203 upper cover plate

[0033] 204 quartz ring

[0034] 205 lifting mechanism

[0035] 206 chamber bottom plate

[0036] 207 chamber sidewall

[0037] 208 lifting ring

[0038] 301 upper cover plate

[0039] 302 quartz glass

[0040] 303 upper electrode plate

[0041] 304 annular groove

[0042] 305 gas pipeline

[0043] 306 shielding cover

[0044] 401 chamber bottom plate

[0045] 402 quartz support column

[0046] 403 lower electrode plate

[0047] 404 quartz cover plate

[0048] 405 quartz ring

[0049] 406 lifting mechanism

[0050] 407 quartz base plate

[0051] 501 wafer passage

[0052] 502 lifting ring

[0053] 503 chamber base plate

[0054] 504 annular groove DETAILED DESCRIPTION

[0055] The specific embodiments of the present application will now be described in detail with specific reference being made to the figures. It is to be understood that the description given herein is only for the purpose of illustration and that changes and modifications that come within the scope of the present application can be made by those skilled in the art without departing from the spirit of the application. Although the description given herein is with respect to preferred embodiments, it is to be understood that the features of the application are not limited to these embodiments. Rather, the purpose of the description is to cover all alternatives, modifications, and equivalents that come within the scope of the claims based on the present application. In order to provide an overall understanding of the application, numerous specific details, aspects and embodiments are set forth in the following description. It is to be understood that the aspects and embodiments can be practiced without these specific details. In other instances, well-known methods, procedures and components have not been described in detail so as not to unnecessarily obscure aspects of the embodiments.

[0056] In the description of the present application, it is to be understood that the terms "mounting", "connected", "connecting" should be interpreted broadly, for example, can be fixed connection, can also be detachable connection, or integrally connected; can be mechanical connection, can also be electrical connection; can be directly connected, can also be indirectly connected through an intermediate medium, can be internal communication of two elements. For those skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.

[0057] In addition, "up", "down", "left", "right", "top", "bottom", "horizontal", "vertical" used in the following description should be understood as the orientation shown in the paragraph and the related drawings. The relative terms are only for the convenience of description, and do not mean that the device described should be manufactured or operated in a particular orientation, so it should not be understood as a limitation on the present application.

[0058] It is to be understood that, although the terms "first", "second", "third", and the like can be used herein to describe various components, regions, layers and / or sections, these components, regions, layers and / or sections should not be limited by these terms. These terms are only used to distinguish one component, region, layer or section from another. Thus, a first component, region, layer or section discussed below could be termed a second component, region, layer or section without departing from the scope of the present application.

[0059] In order to overcome the above-mentioned defects in the prior art, the present application provides a vacuum chamber for wafer cutting post-activation pretreatment, which customizes the corresponding support and reaction device for the packaging characteristics of the plurality of chips formed after cutting the wafer to meet the use requirements of the chip surface activation pretreatment, and uses quartz material to completely cover the possible metal inside the chamber, thereby ensuring and improving the reaction effect of the chip surface activation pretreatment.

[0060] Figure 1 is a packaging device structure diagram of the plurality of chips after wafer cutting in the prior art.

[0061] Please refer to Figure 1 In the prior art, the processed wafer is usually packaged on the adhesive tape 102 surrounded by the annular metal frame 101, and the wafer is cut thereon, and the plurality of chips 103 (Die) after cutting are placed on the surface of the adhesive tape 102. It is easy to understand that compared to before cutting, the overall rigidity between the plurality of chips on the upper part of the adhesive tape 102 has changed significantly due to the lack of support in the middle position. The vacuum chamber for chip surface activation pretreatment provided by the present application is designed for this special chip packaging structure, which will be described below in conjunction with the drawings.

[0062] Figure 2 is a device structure diagram of the vacuum chamber for wafer cutting post-activation pretreatment according to an embodiment of the present application.

[0063] Please refer to Figure 2 The vacuum chamber for wafer cutting post-activation pretreatment provided by the present application includes an upper electrode plate 201 and a lower electrode plate 202 provided with a radio frequency electrode. The upper electrode plate 201 is clamped in the center of the annular upper cover plate 203, and together with the lower surface of the upper cover plate 203 forms the top surface of the vacuum chamber. It is easy to understand that in this structure design, the upper electrode plate 201 in the vacuum chamber provided by the present application can be installed by external installation, thereby facilitating its installation and maintenance, so that it does not need to be opened when disassembled, and can be directly replaced from the outside of the machine, thereby providing convenience for the installation and maintenance of the whole device.

[0064] Please continue to refer to Figure 2 Meanwhile, please refer to Figure 1The lower plate 202 is in the shape and size consistent with the upper plate 201 of the top surface of the vacuum chamber and covers the area where the chips on the adhesive tape are located. The outer periphery of the lower plate 202 is sleeved with a quartz ring 204 for containing the metal frame during the activation reaction. The quartz ring 204 also completely covers the lower surface of the metal frame, thereby preventing abnormal discharge of the lower surface of the metal frame from affecting the activation process. The bottom center of the lower plate 202 is connected with a lifting mechanism 205 to move the cut wafer and the metal frame up and down together. The purpose of the up and down movement is to change the electrode spacing value. Different electrode spacing values have different activation effects on the surface of the chip. The adjustable electrode spacing value can meet different activation processing requirements.

[0065] At the same time, as shown in Figure 2 , the vacuum chamber for the activation pretreatment of the cut wafer provided by the application further comprises a chamber bottom plate 206 and a chamber side wall 207. The lifting mechanism 205 passes through the chamber bottom plate 206 to control the lifting of the lower plate 202 inside the vacuum chamber. The chamber side wall 201 is provided with a wafer transfer channel. The cut wafer enters and exits the vacuum chamber through the wafer transfer channel. A lifting ring 208 is used to shield the wafer transfer channel. The lifting ring 208 opens and closes the wafer transfer channel through lifting.

[0066] The device details of the vacuum chamber provided by the application will be described below in conjunction with the partial views.

[0067] Figure 3 The device structure diagram of the upper plate and the upper cover plate in the vacuum chamber is shown according to an embodiment of the application.

[0068] Please refer to Figure 3 , in an embodiment, preferably, the inner periphery of the upper cover plate 301 is provided with a quartz glass 302. The quartz glass 302 covers the entire contact part of the upper plate 303 and the upper cover plate 301, thereby playing an insulating role between the upper cover plate 301 and the upper plate 303.

[0069] At the same time, the contact surface of the upper plate 303 and the quartz glass 302 is provided with an annular groove 304. The quartz glass 302 is also provided with uniformly distributed air holes at the corresponding position of the annular groove 304 to guide the gas in the annular groove 304 into the inside of the vacuum chamber.

[0070] In an embodiment, as shown in Figure 3 , the outside of the vacuum chamber is further provided with a gas pipeline 305. The gas pipeline 305 is connected with the annular groove 304 to guide the gas into the annular groove 304. After the annular groove 304 is filled with gas, the gas is discharged through the small holes of the quartz glass 302 which are uniformly distributed, thereby uniformly guiding the gas into the vacuum chamber.

[0071] Herein, the quartz glass 302 is used as the insulation material for insulating the upper cover plate 301 and the upper electrode plate 303, because the quartz glass has a lower outgassing rate, a smoother surface, a higher density and fewer pores than the ceramic material. The insulation material is only used as an example and does not limit the protection scope of the present application. In fact, other materials with a low outgassing rate, a good insulation effect and RF resistance can be used to replace the insulation material.

[0072] In addition, in the embodiment shown in Figure 3 In the embodiment shown in the figure, the upper electrode plate 303 is further provided with a shielding cover 306 covering the upper electrode plate 303. It is easy to understand that, because the upper electrode plate 303 is a charged body, the shielding cover 306 is arranged outside the upper electrode plate 303 to play a shielding role, which can effectively prevent RF radiation and prevent the charged body from hurting people.

[0073] Figure 4 Figure 4 is a schematic structural view of a lower electrode plate and a bottom plate of a vacuum chamber according to an embodiment of the present application.

[0074] Please refer to Figure 4 In a preferred embodiment, the outer periphery of the chamber bottom plate 401 is further provided with a plurality of quartz support columns 402, which can be combined with reference to Figure 1 The quartz support columns 402 correspond to the edges of the metal frame in the radial direction and are located outside the lower electrode plate 403, and are used to hold the metal frame before or after the activation reaction starts. For example, before the reaction starts, the robot sends the cut wafer into the vacuum chamber through the wafer transfer channel, and correspondingly places the metal frame on the plurality of quartz support columns 402. After the reaction starts, the lower electrode plate 403 supports and lifts the cut chips from the center and moves up and down to change the distance between the electrodes.

[0075] In the embodiment shown in Figure 4 In the embodiment shown in the figure, preferably, the vacuum chamber is further provided with a quartz cover plate 404 covering the upper surface of the metal frame around the chip package, so as to prevent abnormal discharge between the metal frame and the upper electrode plate. The quartz cover plate 404 also covers the quartz support columns 402 and the quartz ring 405 around the outer periphery of the lower electrode plate in width. The device structure of the quartz ring 405 and the quartz support columns 402 will be described in detail below.

[0076] Figure 5 Figure 5 is a schematic structural view of a quartz ring of a lower electrode plate in a vacuum chamber according to an embodiment of the present application.

[0077] As shown in Figure 5As shown, the quartz ring 405 is fitted onto the outer periphery of the lower electrode plate, and its side periphery has a groove corresponding to the position of the quartz support column for mating and installation with the quartz support column.

[0078] Figure 6 This is a schematic diagram of a quartz support column device in a vacuum chamber according to an embodiment of the present invention.

[0079] like Figure 6 As shown, in a preferred embodiment, the top of the quartz support post 402 has a stepped protrusion to support the metal frame surrounding the chip package. The outer periphery of the top of the quartz support post 402 also has a groove for connecting... Figure 4 The inner and outer circumferences of the quartz cover plate 404 are respectively snapped into the inner circumference of the metal frame surrounding the chip package and the groove. Multiple quartz support columns 402 are arranged along the outer circumference of the base plate, for example, three can be arranged around the circumference, and the empty spaces correspond to the chip transfer channel to facilitate the robot arm to transfer the chip from the outside.

[0080] Please return to Figure 4 ,exist Figure 4 In the illustrated embodiment, the upper surface of the chamber floor 401 and the periphery of the hole through which the lifting mechanism 406 passes are also covered with a quartz floor 407. For example... Figure 4 As shown in the upper part, the sidewall of the hole and the quartz base plate 407 on the upper surface of the chamber base plate 401 can be separated and spliced ​​together, which facilitates production and assembly.

[0081] As will be readily understood by those skilled in the art, the device design of multiple quartz materials in the vacuum chamber provided by the present invention, including the quartz ring 405, the quartz support column 402, the quartz cover plate 404, and the quartz base plate 407, is designed for the metal frame surrounding the multiple chip packages after cutting, and provides comprehensive coverage and shielding for any metal that may appear inside the chamber, thereby preventing abnormal discharge of internal metal materials during the activation process and thus affecting the activation reaction.

[0082] Figure 7 This is a schematic diagram of the device structure of the vacuum chamber plate transfer channel and the lifting ring according to an embodiment of the present invention.

[0083] Please refer to Figure 7 As can be easily understood, a chip transfer channel 501 for a robotic arm to enter and exit the chamber for picking up and delivering chips is provided on the side periphery. The chip transfer channel 501 makes the internal structure of the chamber no longer a complete cylinder. Therefore, the vacuum chamber provided by the present invention is also provided with a lifting ring 502 for blocking the chip transfer channel 501. The lifting ring 502 opens and closes the chip transfer channel 501 by lifting and lowering.

[0084] In a preferred embodiment, such as Figure 7As shown, the lifting ring is made of metal material, which can control the plasma field in the middle region between the upper and lower plates during the activation reaction process. The lifting ring 502 blocks the square holes of the wafer transfer channel 501, thereby preventing abnormal discharge and making the plasma field in the reaction more uniform to a certain extent.

[0085] In addition, preferably, the chamber bottom plate 503 is provided with a ring-shaped groove 504 at a position corresponding to the lifting ring to accommodate the lowered lifting ring 502.

[0086] As can be understood by those skilled in the art, since the vacuum chamber needs to complete the exchange between vacuum and atmosphere at the end and beginning of each process, the vacuum pumping time directly affects the production capacity of the equipment. Therefore, in order to improve the production capacity, the internal space of the vacuum chamber needs to be as small as possible. The vacuum chamber provided by the present application is provided with a ring-shaped groove 504 on the chamber bottom plate 503 to accommodate the lifting ring 502. When the wafer transfer operation is performed, the lifting ring 502 falls into the ring-shaped groove 504, and the robot can access the inside of the cavity to pick and place wafers. The design of the ring-shaped groove 504 realizes the minimization of the vacuum region inside the cavity.

[0087] The vacuum chamber for wafer cutting and activation pretreatment provided by the present application customizes the corresponding support and reaction device according to the packaging characteristics of the plurality of chips formed after the wafer is cut to meet the use requirements of the chip surface activation pretreatment, and uses quartz material to completely cover the possible metal inside the chamber in all directions, thereby ensuring and improving the reaction effect of the chip surface activation pretreatment.

[0088] Another aspect of the present application also provides a wafer cutting and activation pretreatment method. The vacuum chamber described above is used, the outer periphery of the chamber bottom plate is further provided with a plurality of quartz support columns, the radial position of the quartz support columns corresponds to the edge of the metal frame and is located outside the lower plate, and the quartz support columns are used to hold the metal frame before or after the activation reaction starts. The vacuum chamber is also provided with a quartz cover plate for covering the upper surface of the metal frame. The quartz cover plate covers the quartz support columns and the quartz ring on the outer periphery of the lower plate in width. The activation pretreatment method comprises the following steps: sending the cut wafer into the vacuum chamber through the wafer transfer channel, and placing the metal frame on the quartz support column; lifting the lifting ring to block the wafer transfer channel, and lifting the lower plate to support the cut wafer; installing the quartz cover plate to cover the upper surface of the metal frame; introducing the reaction gas, and electrifying the upper plate and the lower plate, and adjusting the distance between the plates by lifting the lower plate to perform the activation reaction; turning off the power after the reaction is completed, and lowering the lower plate to make the metal frame fall on the quartz support column again; and lowering the lifting ring to send the cut wafer out of the vacuum chamber.

[0089] The vacuum chamber and the wafer cutting post-activation pretreatment method provided by the application are characterized in that the support and reaction device are customized according to the packaging characteristics of the chips formed after the wafer is cut to meet the use requirements of the chip surface activation pretreatment, and the quartz material is used to completely cover the possible metal in the chamber, thereby ensuring and improving the reaction effect of the chip surface activation pretreatment.

[0090] Although the above-described methods are illustrated and described as a series of acts for simplicity, it will be appreciated and understood by those skilled in the art that the methods are not limited by the order of acts, as some acts can occur in different orders and / or concurrently with other acts according to one or more embodiments.

[0091] The foregoing description of the present disclosure has been provided for the purposes of illustrating and describing but not limiting the present disclosure. Various modifications to the present disclosure will be readily apparent to those skilled in the art, and the generic principles defined herein can be applied to other variations without departing from the spirit or scope of the present disclosure. Thus, the present disclosure is not intended to be limited to the examples and designs described herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A vacuum chamber for activation pretreatment after wafer dicing, used for activation pretreatment of the surface of the diced wafer, wherein the diced wafer is placed in the form of multiple chips on a tape surrounded by an annular metal frame, characterized in that, The vacuum chamber includes: The device includes an upper electrode plate and a lower electrode plate with radio frequency electrodes. The upper electrode plate is fitted into the center of an annular upper cover plate. The lower surface of the upper electrode plate and the upper cover plate together form the top surface of the vacuum chamber. The shape and size of the lower electrode plate are consistent with the upper electrode plate on the top surface of the vacuum chamber and cover the area where multiple chips on the tape are located. A quartz ring is fitted around the outer periphery of the lower electrode plate to hold the metal frame during the activation reaction to prevent abnormal discharge on its lower surface. A lifting mechanism is connected to the center of the bottom of the lower electrode plate to move the diced wafer up and down. The chamber includes a bottom plate and side walls. A lifting mechanism passes through the bottom plate to control the raising and lowering of the lower electrode plate within the vacuum chamber. A square wafer transfer channel is provided on the side walls of the chamber, through which the diced wafer enters and exits the vacuum chamber. A lifting ring is used to block the film transfer channel, and the lifting ring opens and closes the film transfer channel by raising and lowering.

2. The vacuum chamber as described in claim 1, characterized in that, The inner circumference of the upper cover plate is provided with quartz glass, which covers the entire contact area between the upper electrode plate and the upper cover plate. An annular groove is provided on the contact surface between the upper electrode plate and the quartz glass. The quartz glass is also provided with uniformly distributed air holes at the corresponding positions of the annular groove to guide the gas passing through the annular groove into the vacuum chamber.

3. The vacuum chamber as described in claim 1, characterized in that, The outer periphery of the chamber bottom plate is also provided with a plurality of quartz support columns, which are radially positioned corresponding to the edge of the metal frame and located outside the lower electrode plate, and are used to hold the metal frame before or after the activation reaction begins.

4. The vacuum chamber as described in claim 3, characterized in that, The top of the quartz support column has stepped protrusions to support the metal frame.

5. The vacuum chamber as described in claim 3, characterized in that, The vacuum chamber is also provided with a quartz cover plate for covering the upper surface of the metal frame. The quartz cover plate also covers the quartz support column and the quartz ring around the lower electrode plate in width.

6. The vacuum chamber as described in claim 5, characterized in that, The top outer periphery of the quartz support column is provided with a groove, and the inner and outer peripheries of the quartz cover plate are respectively engaged with the inner periphery of the metal frame and the groove.

7. The vacuum chamber as claimed in claim 1, characterized in that, The lifting ring is made of metal, and the bottom plate of the chamber has an annular groove at a position corresponding to the lifting ring to accommodate the lowered lifting ring.

8. The vacuum chamber as claimed in claim 1, characterized in that, A shielding cover is also provided above the upper electrode plate to cover the upper electrode plate.

9. The vacuum chamber as claimed in claim 1, characterized in that, The upper surface of the chamber floor plate and the periphery of the hole through which the lifting mechanism passes are also covered with a quartz base plate.

10. The vacuum chamber as claimed in claim 2, characterized in that, The vacuum chamber is also provided with a gas pipeline outside, which is connected to the annular groove to introduce gas into the annular groove.

11. A method for activation pretreatment after wafer dicing, employing a vacuum chamber as described in claim 1, wherein a plurality of quartz support pillars are further provided on the outer periphery of the chamber bottom plate, the quartz support pillars being radially positioned corresponding to the edge of the metal frame and located outside the lower electrode plate, for receiving the metal frame before or after the activation reaction begins; a quartz cover plate is further provided in the vacuum chamber for covering the upper surface of the metal frame, the quartz cover plate also covering the quartz support pillars and the quartz ring on the outer periphery of the lower electrode plate in width; the activation pretreatment method includes: The cut wafer is fed into the vacuum chamber through the wafer transfer channel, and the metal frame is placed on the quartz support column; The lifting ring rises to block the wafer transfer channel, and the lower electrode plate rises to support the diced wafer. Install the quartz cover plate to cover the upper surface of the metal frame; A reaction gas is introduced, the upper electrode and the lower electrode are energized, and the lower electrode is raised and lowered to adjust the distance between the electrodes to carry out the activation reaction; After the reaction is complete and the power is cut off, the lower electrode plate falls so that the metal frame rests again on the quartz support column; and The lifting ring descends to deliver the diced wafer out of the vacuum chamber.

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