Display panel

Abstract

The present application provides a display panel, comprising: a substrate, a thin film transistor layer, an insulating layer, an anode layer, an electron transport layer, and a cathode layer. The thin film transistor layer comprises an auxiliary transistor; the insulating layer is provided with a first cathode auxiliary hole; the anode layer comprises a connecting portion, the connecting portion is provided in the first cathode auxiliary hole and is electrically connected to the auxiliary transistor; the electron transport layer comprises an electron transport portion, the electron transport portion and the connecting portion are provided correspondingly; the cathode layer comprises a cathode auxiliary electrode, the cathode auxiliary electrode is connected to the electron transport portion. By providing the first cathode auxiliary hole, the connecting portion, the electron transport portion, and the cathode auxiliary electrode, electrical conduction can be formed between the connecting portion and the cathode auxiliary electrode due to the potential difference before the display panel emits light, thereby directly providing voltage and current compensation to the cathode layer when the display panel is operating normally, preventing the display panel from having uneven brightness due to voltage drop, and improving the quality of the display panel.

Description

Technical Field

[0001] The present application relates to the field of display technology, and in particular to a display panel. Background Art

[0002] Organic Light Emitting Diodes (OLEDs) are current-mode semiconductor light-emitting devices that actively emit light by controlling the injection and recombination of OLED carriers into organic materials. Compared to passive liquid crystal displays (LCDs), self-luminous OLED displays offer advantages such as fast response, high contrast, and wide viewing angles, and are easily adaptable to flexible displays.

[0003] However, OLEDs are extremely sensitive to their driving current, and even slight changes in current can affect their luminous intensity. This is especially true for large-scale OLED display panels, where the resistance of metal conductors is not zero at room temperature. Current flowing through these conductors generates a voltage drop (IR drop), which results in different potentials at different distances from the input terminal. This potential difference causes different currents in OLEDs at different locations, resulting in uneven brightness in the center of the display area of ​​large-scale display panels, affecting display quality. Summary of the Invention

[0004] The present application provides a display panel, and proposes a new cathode auxiliary structure to solve the problem of uneven display caused by voltage drop in the display panel, so as to provide sufficient current to support OLED light emission.

[0005] The present application provides a display panel, comprising:

[0006] substrate;

[0007] a thin film transistor layer, the thin film transistor layer being disposed on the substrate, the thin film transistor layer including an auxiliary transistor;

[0008] an insulating layer, the insulating layer being disposed on a side of the thin film transistor layer away from the substrate, the insulating layer being provided with a first cathode auxiliary hole;

[0009] an anode layer, the anode layer being disposed on a side of the insulating layer away from the substrate, the anode layer comprising a connecting portion, the connecting portion being disposed in the first cathode auxiliary hole and electrically connected to the auxiliary transistor;

[0010] an electron transport layer, the electron transport layer being arranged on a side of the anode layer away from the substrate, the electron transport layer comprising an electron transport portion, the electron transport portion being arranged corresponding to the connecting portion; and

[0011] A cathode layer is provided on a side of the electron transport layer away from the substrate, and the cathode layer includes a cathode auxiliary electrode connected to the electron transport portion.

[0012] In the display panel provided in the present application, the display panel also includes a pixel definition layer, wherein the pixel definition layer is arranged between the anode layer and the electron transport layer, the pixel definition layer is provided with a second cathode auxiliary hole, the second cathode auxiliary hole is arranged corresponding to the first cathode auxiliary hole, and the electron transport part is arranged in the second cathode auxiliary hole.

[0013] In the display panel provided in the present application, the connecting portion includes a first sub-electrode portion and a second sub-electrode portion; the first sub-electrode portion is connected to one of the source or drain of the auxiliary transistor; the second sub-electrode portion is arranged on the side wall of the first cathode auxiliary hole and is connected to the first sub-electrode portion.

[0014] In the display panel provided in the present application, the second sub-electrode portion covers the sidewall of the first cathode auxiliary hole.

[0015] In the display panel provided in the present application, the end portion of the connecting portion away from the substrate is flush with the insulating layer.

[0016] In the display panel provided in the present application, the electron transmission part includes a first sub-transmission part and a second sub-transmission part; the first sub-transmission part is arranged in a ring inside the first cathode auxiliary hole; the second sub-transmission part is arranged in a ring inside the second cathode auxiliary hole and is connected to the first sub-transmission part; the orthographic projection of the connecting part on the substrate is located within the orthographic projection range of the electron transmission part on the substrate.

[0017] In the display panel provided in the present application, the electron transport portion covers the second cathode auxiliary hole.

[0018] In the display panel provided in the present application, the electron transport portion further includes a third sub-transport portion, the third sub-transport portion is provided on a side of the pixel definition layer away from the substrate, and the third sub-transport portion is connected to the second sub-transport portion.

[0019] In the display panel provided in the present application, the pixel definition layer further includes a pixel definition portion, the pixel definition portion is disposed within the first cathode auxiliary hole, and the pixel definition portion does not completely cover the connection portion.

[0020] In the display panel provided in the present application, the end portion of the pixel defining portion away from the substrate is flush with the end portion of the connecting portion away from the substrate.

[0021] In the display panel provided in the present application, an end portion of the pixel defining portion away from the substrate is flush with the insulating layer.

[0022] The display panel provided in the present application, by setting up a new cathode auxiliary structure, can make the connection part and the cathode auxiliary electrode electrically conductive before the display panel emits light, so that when the display panel is operating normally, it can directly provide voltage and current compensation to the cathode layer, preventing the display panel from having uneven brightness due to IR Drop, thereby improving the display quality of the display panel. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] Figure 1 A schematic diagram of a first structure of a display panel provided in an embodiment of the present application;

[0024] Figure 2 A schematic diagram of a second structure of a display panel provided in an embodiment of the present application;

[0025] Figure 3 A third structural schematic diagram of a display panel provided in an embodiment of the present application;

[0026] Figure 4 A fourth structural schematic diagram of a display panel provided in an embodiment of the present application;

[0027] Figure 5 A fifth structural schematic diagram of a display panel provided in an embodiment of the present application;

[0028] Figure 6 A sixth structural diagram of a display panel provided in an embodiment of the present application;

[0029] Figure 7 A seventh structural schematic diagram of a display panel provided in an embodiment of the present application;

[0030] Figure 8 This is a schematic diagram of an eighth structure of a display panel provided in an embodiment of the present application;

[0031] Figure 9 A ninth structural diagram of a display panel provided in an embodiment of the present application;

[0032] Figure 10 This is a tenth structural schematic diagram of the display panel provided in an embodiment of the present application. DETAILED DESCRIPTION

[0033] The following will be combined with the drawings in the embodiments of this application to clearly and completely describe the technical solutions in the embodiments of this application. Obviously, the embodiments described are only part of the embodiments of this application, not all of them. Based on the embodiments in this application, all other embodiments obtained by those skilled in the art without making creative efforts are within the scope of protection of this application.

[0034] Furthermore, the terms "first," "second," and so on, in the specification and claims of this application are used to distinguish between different objects, not to describe a specific order. The terms "including," "having," and any variations thereof, are intended to cover non-exclusive inclusions. Because the source and drain of the transistors used in this application are symmetrical, their source and drain are interchangeable.

[0035] See Figure 1 , Figure 1 This is a schematic diagram of the first structure of the display panel provided in the embodiment of the present application. Figure 1 As shown, the display panel 100 includes a substrate 10 , a thin film transistor layer, an insulating layer 40 , an anode layer 50 , an electron transport layer 74 and a cathode layer 80 .

[0036] Specifically, the thin film transistor layer is disposed on the substrate 10 , wherein the thin film transistor layer includes the auxiliary transistor 301 .

[0037] Specifically, the insulating layer 40 is disposed on a side of the thin film transistor layer away from the substrate 10 , and the insulating layer 40 is provided with a first cathode auxiliary hole 401 .

[0038] Specifically, the anode layer 50 is disposed on a side of the insulating layer 40 away from the substrate, wherein the anode layer 50 includes a connecting portion 501, which is disposed within the first cathode auxiliary hole 401 and is electrically connected to the auxiliary transistor 301. It should be noted that the anode layer 50 includes an anode portion, which is spaced apart and insulated from the connecting portion 501. The pixel's light-emitting functional layer is disposed on a side of the anode portion away from the substrate 10. Since the anode portion is conventional, it will not be described in detail here.

[0039] Specifically, the electron transport layer 74 is disposed on a side of the anode layer 50 away from the substrate 10 , wherein the electron transport layer 74 includes an electron transport portion 741 , and the electron transport portion 741 is disposed corresponding to the connecting portion 501 .

[0040] Specifically, the cathode layer 80 is disposed on a side of the electron transport layer 74 away from the substrate 10 , wherein the cathode layer 80 includes a cathode auxiliary electrode 801 , and the cathode auxiliary electrode 801 is connected to the electron transport portion 741 .

[0041] In the display panel 100 provided in this embodiment, the connecting portion 501 of the anode layer 50 is arranged within the first cathode auxiliary hole 401, and then the electron transport portion 741 of the electron transport layer 74 is arranged corresponding to the connecting portion 501, so that the electron transport portion 741 is arranged on the side of the connecting portion 501 away from the substrate 10, and then the cathode auxiliary electrode 801 of the cathode layer 80 is connected to the electron transport portion 741.

[0042] That is, in the display panel 100 provided in this embodiment, the connection part 501 is separated from the cathode auxiliary electrode 801 by the electron transmission part 741, so that before the display panel 100 emits light, a first voltage can be applied to the connection part 501 through the auxiliary transistor 301, and at the same time, a second voltage with a potential smaller than the first voltage can be applied to the cathode auxiliary electrode 801. Specifically, a positive voltage can be applied to the connection part 501 through the auxiliary transistor 301, and a negative voltage can be applied to the cathode auxiliary electrode 801. A potential difference is generated between the connection part 501 and the cathode auxiliary electrode 801, so that the electron transmission part 741 is broken down and conductive under the action of the electric field, thereby achieving electrical conduction between the connection part 501 and the cathode auxiliary electrode 801. Furthermore, when the display panel 100 is working normally, voltage and current compensation can be directly provided to the cathode layer 80 through the connection part 501, thereby preventing the problem of uneven brightness due to voltage drop in a large area of ​​the display panel, thereby improving the display quality.

[0043] The substrate 10 may be a transparent and insulating substrate, such as a glass substrate, a silicon substrate, a plastic substrate with good heat resistance, etc.

[0044] Among them, the thin film transistor layer includes an active layer 31, a gate insulating layer 32, a gate layer 33, an interlayer dielectric layer 34 and a source and drain metal layer 35 arranged in sequence. The thin film transistor layer includes a plurality of thin film transistors (hereinafter referred to as TFTs) and signal wiring. The plurality of TFTs include at least oxide semiconductor TFTs, and may also include one or two of low-temperature polysilicon TFTs and amorphous silicon TFTs. The plurality of TFTs include at least top-gate TFTs, and may also include bottom-gate TFTs. In this embodiment, for the convenience of intuitive description, this Figure 1 The auxiliary transistor 301 shown is a top-gate TFT. In some embodiments, the auxiliary transistor 301 may also be a bottom-gate TFT, as long as the connection portion 501 can be electrically connected to the auxiliary transistor 301.

[0045] Among them, the insulating layer 40 is used to provide insulation and protection for the thin film transistor layer. Therefore, the insulating layer 40 may include a passivation layer 41 and a planarization layer 42. Among them, the passivation layer 41 is arranged on the side of the thin film transistor layer away from the substrate 10, and the passivation layer 41 provides insulation and protection for the thin film transistor layer. The passivation layer 41 may be made of a silicon oxide compound thin film material. Among them, the planarization layer 42 is arranged on the side of the passivation layer 41 away from the substrate 10, and the planarization layer 42 is used to ensure the flatness of the anode layer 50 and eliminate the step difference. Of course, in some embodiments, the step difference between the film layers is not obvious, then the insulating layer 40 may also only include the passivation layer 41, and there is no need to provide the planarization layer 42 to ensure the flatness of the anode layer 50.

[0046] The anode layer 50 comprises a stacked metal oxide and metal material. For example, the anode layer 50 may comprise a metal oxide material, a metal material, and a metal oxide material stacked in sequence. Specifically, the anode layer 50 may comprise a stacked indium tin oxide, metallic silver, and indium tin oxide material (ITO / Ag / ITO); or the anode layer 50 may comprise a stacked indium zinc oxide, metallic silver, and indium zinc oxide material (IZO / Ag / IZO).

[0047] Thus, a first voltage is applied to the connecting portion 501 through the auxiliary transistor 301, and at the same time, a second voltage is applied to the cathode auxiliary electrode 801. The potential difference formed between the connecting portion 501 and the cathode auxiliary electrode 801 is used to cause the silver ions in the connecting portion 501 to migrate through the electron transport portion 741 to achieve conduction, thereby facilitating the provision of sufficient current to support the cathode and ensuring the display uniformity of the display panel 100.

[0048] In some embodiments, see Figure 2 , Figure 2 This is a schematic diagram of the second structure of the display panel provided in the embodiment of the present application. Figure 2 As shown, the difference from the display panel provided by the previous embodiment is that the display panel 100 provided by this embodiment further includes a pixel definition layer 60, and the pixel definition layer 60 is arranged between the anode layer 50 and the electron transport layer.

[0049] The pixel definition layer 60 is used to define the second cathode auxiliary aperture 601 and the pixel region 602, so that the light-emitting functional layer can be disposed within the pixel region 602 defined by the pixel definition layer 60. The second cathode auxiliary aperture 601 is disposed correspondingly to the first cathode auxiliary aperture 401, and the electron transfer portion 741 is disposed within the second cathode auxiliary aperture 601. Consequently, the electron transfer portion 741 is disposed on the side of the connecting portion 501 away from the substrate 10. Therefore, a first voltage can be applied to the connecting portion 501 via the auxiliary transistor 301, while a second voltage is applied to the cathode auxiliary electrode, where the potential of the second voltage is lower than the potential of the first voltage. This causes the electron transfer portion 741 to break down under the action of the electric field, thereby conducting electricity and achieving electrical conduction between the connecting portion 501 and the cathode auxiliary electrode 801.

[0050] It should be noted that in the display panel 100 provided in this embodiment, the anode layer 50 also includes an anode portion 502, which is spaced apart and insulated from the connecting portion 501, so that the light-emitting functional layer of the pixel is arranged on the side of the anode portion away from the substrate 10. Since the anode portion is a prior art, it will not be described in detail here.

[0051] It is worth mentioning that please continue to refer to Figure 2 In the thin film transistor layer, a driving transistor is provided which is connected to the anode portion 502, and an auxiliary transistor 301 is provided which is connected to the connection portion 501. Thus, the auxiliary transistor 301 provides sufficient current to the cathode auxiliary electrode 801, and the driving transistor drives the pixel to emit light.

[0052] The material of the pixel definition layer 60 may be a hydrophobic material, so as to ensure the flatness of the light-emitting functional layer when the light-emitting functional layer is formed in the pixel area 602 using inkjet printing (IJP) technology.

[0053] The light-emitting functional layer includes a hole injection layer, a hole transport layer, a light-emitting material layer, a pixel electron transport unit 742 and an electron injection layer stacked in sequence.

[0054] Please continue to see Figure 1 as well as Figure 2 In some embodiments, the display panel 100 further includes a light shielding layer 21 and a buffer layer 22 .

[0055] Among them, the light shielding layer 21 is provided on the substrate 10 to prevent the active layer 31 in the thin film transistor layer from being affected by light. Optionally, the material of the light shielding layer LS is selected from one of copper (Cu), tantalum (Ta), tungsten (W), molybdenum (Mo), aluminum (Al), titanium (Ti), copper-niobium (CuNb) alloy, a laminate of copper (Cu) and molybdenum (Mo), a laminate of copper (Cu) and molybdenum-titanium (MoTi) alloy, a laminate of copper (Cu) and titanium (Ti), a laminate of aluminum (Al) and molybdenum (Mo), a laminate of molybdenum (Mo) and tantalum (Ta), a laminate of molybdenum (Mo) and tungsten (W), and a laminate of molybdenum (Mo)-aluminum (Al)-molybdenum (Mo). Optionally, the light shielding layer 21 may include a light shielding metal layer, a diffusion barrier layer, and an etching barrier layer arranged in layers. The material of the light shielding metal layer may be a Mo / Cu laminate. The material of the diffusion barrier layer may be a material having a work function similar to that of Cu, such as MoTi, Mo, or Ta. The material of the etch stop layer can be metal oxides such as ITO and IGZO.

[0056] The buffer layer 22 is disposed on the side of the light shielding layer 21 away from the substrate 10. The buffer layer 22 prevents the metal in the light shielding layer 21 from entering the active layer 31 of the thin-film transistor layer. The material of the buffer layer 22 is selected from one or more of silicon oxide, nitrogen oxide, silicon oxynitride, and silicon oxide, nitrogen oxide, and silicon oxynitride. The buffer layer 22 also provides a buffering and protective effect for the thin-film transistor layer.

[0057] In this embodiment, based on the setting of the shading layer 21, a positive voltage can be applied to the shading portion of the shading layer 21 corresponding to the auxiliary transistor 301, driving the auxiliary transistor 301 to be in an on state, and providing the positive voltage to the connecting portion 501 electrically connected to the auxiliary transistor 301. At the same time, a negative voltage is applied to the cathode auxiliary electrode 801 to generate a potential difference between the connecting portion 501 and the cathode auxiliary electrode 801, so that the electron transmission portion 741 is broken down under the action of the electric field and conducts electricity, thereby realizing electrical conduction between the connecting portion 501 and the cathode auxiliary electrode 801.

[0058] In some embodiments, please refer to Figure 1 ,like Figure 1 As shown, in the display panel 100 provided in this embodiment, the electron transmission portion 741 is integrally formed, and the electron transmission portion 741 covers the second cathode auxiliary hole 601 .

[0059] In some embodiments, see Figure 3 , Figure 3 This is a third structural diagram of the display panel provided in the embodiment of the present application. Figure 3As shown, the electron transmission portion 741 of the display panel 100 includes a first sub-transmission portion 7411 and a second sub-transmission portion 7412. The first sub-transmission portion 7411 is disposed in an annular manner within the first cathode auxiliary hole 401, the second sub-transmission portion 7412 is disposed in an annular manner within the second cathode auxiliary hole 601, and the orthographic projection of the connection portion 501 on the substrate 10 is located within the orthographic projection range of the electron transmission portion 741 on the substrate 10.

[0060] In this embodiment, the first sub-transmission portion 7411 is disposed within the first cathode auxiliary aperture 401, thereby preventing the cathode auxiliary electrode 801 from directly contacting the connecting portion 501 within the first cathode auxiliary aperture 401. The second sub-transmission portion 7412 is disposed within the second cathode auxiliary aperture 601, thereby preventing the cathode auxiliary electrode 801 from directly contacting the connecting portion 501 within the second cathode auxiliary aperture 601. In other words, the first sub-transmission portion 7411 and the second sub-transmission portion 7412 jointly prevent direct contact of the cathode auxiliary electrode 801, which could cause a short circuit in the auxiliary transistor 301. This ensures that a potential difference is formed between the connecting portion 501 and the cathode auxiliary electrode 801, thereby ensuring that the electron transmission portion 741 is broken down by the electric field and conducts electricity, thereby achieving electrical conduction between the connecting portion 501 and the cathode auxiliary electrode 801.

[0061] See also Figure 4 , Figure 4 This is a fourth structural diagram of a display panel provided in an embodiment of the present application. Figure 4 As shown, the difference between this embodiment and the previous embodiment is that: in this display panel 100, the electron transport layer 74 also includes a third sub-transport portion 7413, the third sub-transport portion 7413 is arranged on the side of the pixel definition layer 60 away from the substrate 10, and the third sub-transport portion 7413 is connected to the electron transport portion 741.

[0062] In this embodiment, by disposing the third sub-transmission part 7413 outside the second cathode auxiliary hole 601, the contact area between the electron transmission part 741 and the cathode auxiliary electrode 801 is further increased, which is beneficial to shorten the time required for the electron transmission part 741 to be broken down and conduct electricity under the action of the electric field.

[0063] See also Figure 5 , Figure 5 The fifth structural diagram of the display panel is provided for the embodiment of the present application. Figure 5 As shown, the difference between this embodiment and the previous embodiment is that: in this display panel 100 , the connecting portion 501 includes a first sub-electrode portion 5011 and a second sub-electrode portion 5012 .

[0064] The first sub-electrode portion 5011 is connected to one of the source or the drain of the auxiliary transistor 301 ; the second sub-electrode portion 5012 is disposed around the sidewall of the first cathode auxiliary hole 401 and is connected to the first sub-electrode portion 5011 .

[0065] In this embodiment, the first sub-electrode portion 5011 is disposed on a side of the auxiliary transistor 301, either the source or the drain, away from the substrate 10. Thus, the provision of the first sub-electrode portion 5011 achieves electrical connection between the auxiliary transistor 301 and the connecting portion 501. By surrounding the sidewall of the first cathode auxiliary hole 401 with the second sub-electrode portion 5011 and connecting the first sub-electrode portion 5012, a certain contact area is ensured between the first sub-electrode portion 5011 and the electron transmission portion 741, and a certain contact area is ensured between the second sub-electrode portion 5012 and the electron transmission portion 741. This increases the contact area between the connecting portion 501 and the electron transmission portion 741, facilitating a reduction in the time required for the electron transmission portion 741 to break down and conduct electricity under the action of the electric field.

[0066] See also Figure 6 , Figure 6 The sixth structural diagram of the display panel is provided for the embodiment of the present application. Figure 6 As shown, the difference between this embodiment and the previous embodiment is that: in this display panel 100 , the second sub-electrode portion 5012 covers the side wall of the first cathode auxiliary hole 401 .

[0067] In this embodiment, while ensuring that the connecting part 501 is arranged within the first cathode auxiliary hole 401, the contact area between the connecting part 501 and the electron transmission part 741 is maximized by covering the side wall of the first cathode auxiliary hole 401 with the second sub-electrode part 5012, so as to shorten the time required for the electron transmission part 741 to be broken down and conduct electricity under the action of the electric field.

[0068] See also Figure 7 , Figure 7 The seventh structural diagram of the display panel is provided for the embodiment of the present application. Figure 7 As shown, the difference between this embodiment and the previous embodiment is that: in this display panel 100 , the end of the connecting portion 501 away from the substrate 10 is flush with the insulating layer 40 .

[0069] The purpose of providing the connecting portion 501 is to completely fill the first cathode auxiliary hole 401 with the connecting portion 501 , so that the electron transport portion 741 only needs to be provided within the second cathode auxiliary hole 601 to avoid direct contact between the cathode auxiliary electrode 801 and the connecting portion 501 .

[0070] See also Figure 8 , Figure 8The eighth structural diagram of the display panel is provided for the embodiment of the present application. Figure 8 As shown, the difference between this embodiment and the previous embodiment is that: in this display panel 100 , the pixel definition layer 60 further includes a pixel definition portion 61 .

[0071] The pixel defining portion 61 is disposed in the first cathode auxiliary hole 401 , so that the pixel defining portion 61 is located on a side of the connecting portion 501 away from the substrate 10 .

[0072] During the preparation of the display panel 100, a first cathode auxiliary hole 401 is first opened in the insulating layer 40; then, the anode layer 50 is deposited on the entire surface and patterned to form a connection portion within the first cathode auxiliary hole 401; then, the pixel definition layer 60 is deposited on the entire surface so that the pixel definition layer 60 covers the insulating layer 40 and the anode layer 50. In this case, the first cathode auxiliary hole 401 is also filled with the pixel definition layer 60; then, a second cathode auxiliary hole 601 is opened in the pixel definition layer 60 in an area corresponding to the first cathode auxiliary hole 401, so that the connection portion 501 can be exposed at least through the second cathode auxiliary hole 601, facilitating the subsequent connection between the electron transmission portion 741 and the connection portion 501, so as to achieve the connection between the connection portion 501 and the electron transmission portion 741, and the electron transmission portion 741 is connected to the cathode auxiliary electrode 801, thereby forming the conditions required for the electron transmission portion 741 to be broken down and conductive under the action of the electric field.

[0073] Therefore, during the formation of the second cathode auxiliary hole 601, the pixel definition portion 61 within the first cathode auxiliary hole 401 may not be completely etched. As long as the connection portion 501 is not completely covered by the pixel definition portion 61, the connection portion 501 can be connected to the electron transfer portion 741. This can save the time required for etching the pixel definition layer 60 and reduce production costs.

[0074] See also Figure 9 , Figure 9 The ninth structural diagram of the display panel is provided for the embodiment of the present application. Figure 9 As shown, the difference between this embodiment and the previous embodiment is that in this display panel 100 , the end of the pixel defining portion 61 away from the substrate 10 is flush with the end of the connecting portion 501 away from the substrate 10 .

[0075] The display panel 100 provided in this embodiment is configured in this way for the purpose of eliminating the need to completely etch the pixel definition layer 60 located on the side of the connecting portion 501 away from the substrate 10. It is sufficient to allow the end of the connecting portion 501 away from the substrate 10 to be directly connected to the electron transfer portion 741, thereby further shortening the time required for etching the pixel definition layer 60 and further saving production costs.

[0076] See also Figure 10 , Figure 10 The tenth structural diagram of the display panel is provided for the embodiment of the present application. Figure 10 As shown, the difference between this embodiment and the previous embodiment is that: in this display panel 100 , the end of the pixel defining portion 61 away from the substrate 10 is also flush with the insulating layer 40 .

[0077] That is, in the display panel 100 provided in this embodiment, the end of the pixel defining portion 61 away from the substrate 10 is flush with the end of the connecting portion 501 away from the substrate 10, and the end of the pixel defining portion 61 away from the substrate 10 is also flush with the insulating layer 40.

[0078] That is, based on the fact that the connecting portion 501 can just cover the side wall of the first cathode auxiliary hole 401, while the second cathode auxiliary hole 601 is formed in the pixel definition layer 60, the end of the connecting portion 501 away from the substrate 10 is exposed, so there is no need to etch the pixel definition portion 61 in the first cathode auxiliary hole 401, and the connecting portion 501 can be directly connected to the electron transmission portion 741, thereby further shortening the time required for etching the pixel definition layer 60 and further saving production costs.

[0079] The above are merely embodiments of the present application and are not intended to limit the patent scope of the present application. Any equivalent structure or equivalent process transformation made using the contents of the present application specification and drawings, or directly or indirectly applied in other related technical fields, are also included in the patent protection scope of the present application.

Claims

1. A display panel, characterized in that: include: substrate; a thin film transistor layer, the thin film transistor layer being disposed on the substrate, the thin film transistor layer including an auxiliary transistor; an insulating layer, the insulating layer being disposed on a side of the thin film transistor layer away from the substrate, the insulating layer being provided with a first cathode auxiliary hole; an anode layer, the anode layer being disposed on a side of the insulating layer away from the substrate, the anode layer comprising a connecting portion, the connecting portion being disposed in the first cathode auxiliary hole and electrically connected to the auxiliary transistor; an electron transport layer, the electron transport layer being arranged on a side of the anode layer away from the substrate, the electron transport layer comprising an electron transport portion, the electron transport portion being arranged corresponding to the connecting portion; and a cathode layer, the cathode layer being disposed on a side of the electron transport layer away from the substrate, the cathode layer comprising a cathode auxiliary electrode, the cathode auxiliary electrode being connected to the electron transport portion; The display panel also includes a pixel definition layer; the pixel definition layer is arranged between the anode layer and the electron transport layer, and the pixel definition layer also includes a pixel definition portion, the pixel definition portion is arranged within the first cathode auxiliary hole, and the pixel definition portion does not completely cover the connecting portion.

2. The display panel according to claim 1, wherein: The pixel definition layer is provided with a second cathode auxiliary hole, the second cathode auxiliary hole is arranged corresponding to the first cathode auxiliary hole, and the electron transmission part is arranged in the second cathode auxiliary hole.

3. The display panel according to claim 1 or 2, wherein: The connecting portion includes a first sub-electrode portion and a second sub-electrode portion; The first sub-electrode portion is connected to one of the source or the drain of the auxiliary transistor; The second sub-electrode portion is disposed around a side wall of the first cathode auxiliary hole and is connected to the first sub-electrode portion.

4. The display panel according to claim 3, wherein: The second sub-electrode portion covers a sidewall of the first cathode auxiliary hole.

5. The display panel according to claim 1 or 2, wherein: An end portion of the connecting portion away from the substrate is flush with the insulating layer.

6. The display panel according to claim 2, wherein: The electron transport portion includes a first sub-transport portion and a second sub-transport portion; The first sub-transmission portion is annularly arranged in the first cathode auxiliary hole; The second sub-transmission portion is annularly arranged in the second cathode auxiliary hole and connected to the first sub-transmission portion; The orthographic projection of the connecting portion on the substrate is located within the orthographic projection range of the electron transport portion on the substrate.

7. The display panel according to claim 2, wherein: The electron transport portion covers the second cathode auxiliary hole.

8. The display panel according to claim 7, wherein: The electron transport layer further includes a third sub-transport portion, which is disposed on a side of the pixel definition layer away from the substrate, and is connected to the electron transport portion.

9. The display panel according to claim 1, wherein: An end portion of the pixel defining portion away from the substrate is flush with an end portion of the connecting portion away from the substrate.

10. The display panel according to claim 1, wherein An end portion of the pixel defining portion away from the substrate is flush with the insulating layer.

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