Reverse structure electroluminescent element having coated inorganic transparent oxide semiconductor electron transport layer
By using coated inorganic transparent oxide semiconductor materials to form the electron transport layer, the problems of concentrated electron injection and high production costs are solved, achieving efficient carrier control and uniformity of the light-emitting layer, thereby improving luminous efficiency and lifetime.
CN115868247BActive Publication Date: 2026-06-19MIKUNI ELECTORON CO LTD
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Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- MIKUNI ELECTORON CO LTD
- Filing Date
- 2021-06-22
- Publication Date
- 2026-06-19
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Figure CN115868247B_ABST
Abstract
A method for manufacturing an electroluminescent element includes: forming a first electrode on a substrate; forming a first insulating layer covering the first electrode; forming a second electrode disposed on the first insulating layer and having a region overlapping with the first electrode; forming a first electron transport layer in contact with the second electrode; forming a second insulating layer covering the region overlapping with the second electrode and having an opening in the region overlapping with the first electrode. The method involves coating the opening with a liquid composition containing a metal oxide material and a solvent; removing the solvent after coating to form the second electron transport layer; forming a light-emitting layer overlapping the second electron transport layer and containing an electroluminescent material; and forming a third electrode in the region overlapping with the light-emitting layer.
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