A multispectral sensor based on hot carriers, a chip and its fabrication method

By integrating the spectral splitter and detector using an FP resonant cavity structure in a multispectral imaging system, the integration challenge caused by the independence of the spectral splitter and detector in existing technologies is solved, achieving miniaturized, low-cost, and high-sensitivity multispectral imaging.

CN116412910BActive Publication Date: 2026-06-30EISFEL OPTICAL TECH (SUZHOU) CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
EISFEL OPTICAL TECH (SUZHOU) CO LTD
Filing Date
2023-02-02
Publication Date
2026-06-30

AI Technical Summary

Technical Problem

In existing multispectral imaging systems, the spectroscopic system and the detector are independent components, which makes the system difficult to integrate. Furthermore, the components of existing spectroscopic systems are large, difficult to manufacture, and costly.

Method used

A multispectral sensor based on hot carriers is adopted. The FP resonant cavity structure integrates the spectral system and detector into a single sensing unit. Each sensing unit corresponds to a spectrum and contains pixels with a composite layer structure, including a substrate, a back reflective layer, an intermediate layer, an electron transport layer, a tunneling layer, a metal layer, and a cladding layer. The surface plasmons at the metal layer interface are excited by the FP resonant cavity to achieve high-energy transport of hot carriers and current output.

Benefits of technology

It integrates the spectral splitting and detection systems, reducing system size, manufacturing costs, and improving sensitivity and anti-interference capabilities, making it suitable for imaging in special bands.

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Abstract

This invention belongs to the field of optoelectronics and discloses a multispectral sensor, chip, and fabrication method based on hot carriers. The multispectral sensor consists of multiple sets of sensing units, each set corresponding to a spectrum. Each set of sensing units contains at least one pixel. The pixel has a composite layer structure, including a substrate and a back-reflection layer, an intermediate layer, an electron transport layer, a tunneling layer, a metal layer, and a cladding layer sequentially deposited on the substrate. The back-reflection layer, intermediate layer, electron transport layer, tunneling layer, and metal layer together constitute an F-P resonant cavity. The multispectral sensor can be arranged in an array to form a large-format multispectral sensing chip. A beam splitting system implemented using the F-P cavity structure and a detection system implemented using a metal layer / tunneling layer / electron transport layer structure are integrated, achieving photoelectric conversion under illumination in the working wavelength range. Furthermore, the beam splitting system and detector are integrated at the chip level, achieving miniaturization and weight reduction.
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