A crystal and its growth control method, device and equipment

Abstract

The present invention provides a crystal and its growth control method, device, and equipment, relating to the fields of semiconductor and photovoltaic crystal manufacturing technology. The crystal growth control method includes: during the crystal isodiameter growth process, obtaining the actual average pulling speed for at least a portion of a preset time window, wherein the time window slides once each time a first time passes; using a second time as a processing cycle, adjusting the preset base pulling speed for the next processing cycle based on the actual average pulling speed for at least a portion of the window after each sliding of the time window in the current processing cycle, to obtain a target pulling speed for the next processing cycle, and controlling the heating power in the next processing cycle based on the target pulling speed for the next processing cycle, wherein the second time is greater than the first time. This can reduce the deviation between the target pulling speed and the actual average pulling speed, thereby reducing the probability of crystal edge breakage and improving production efficiency.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor and photovoltaic crystal manufacturing, and in particular to a crystal and a growth control method, device and equipment thereof. Background Art

[0002] The CZ method is a crystal growth method established by Czochralski, also known as the CZ method. In the traditional CZ method for growing silicon single crystals, isodiametric growth is very important. For this isodiametric growth process, the relevant technology requires manual setting of a set of target pulling rates, that is, the slope value of the crystal growth length. In this way, during the isodiametric growth process, by comparing the deviation between the actual average pulling rate (that is, the actual pulling rate) and the target pulling rate, the adjustment amount of the current heater's heating power is calculated in real time to guide the actual average pulling rate closer to the target pulling rate, thereby achieving the purpose of controlling the heating power and making the crystal grow according to the required diameter. The crystal pulling rate has a significant impact on the morphology of the crystal interface. The higher the crystal pulling rate, the more concave the crystal interface is towards the crystal, the greater the crystal surface stress, and has a greater impact on the crystal edge fracture (single crystal to polycrystalline). In the related art, the manually set target pulling speed is always fixed. If the target pulling speed is set too high, the actual average pulling speed will be too high, and the probability of crystal edge breakage will increase. In industrial production, the probability of crystal edge breakage can generally be reduced by lowering the target pulling speed. However, if the target pulling speed is set too low, it will not be conducive to increasing the crystal output per unit time. Summary of the Invention

[0003] The present invention provides a crystal and a growth control method, device and equipment thereof, aiming to provide a target pulling speed that matches the actual average pulling speed, thereby reducing the probability of crystal edge breakage and improving production efficiency.

[0004] In a first aspect, an embodiment of the present invention provides a crystal growth control method, comprising:

[0005] During the crystal isodiameter growth process, obtaining an actual average pulling speed at least part of a preset time window, wherein the time window slides once every first time period;

[0006] Taking the second time as the processing cycle, based on the actual average casting speed at at least part of the window time after each sliding of the time window in the current processing cycle, the preset basic casting speed in the next processing cycle is adjusted to obtain the target casting speed in the next processing cycle, so as to control the heating power in the next processing cycle based on the target casting speed in the next processing cycle, wherein the second time is greater than the first time.

[0007] In one possible implementation, taking the second time as the processing cycle and adjusting the preset base casting speed in the next processing cycle based on the actual average casting speed at at least a portion of the window time after each sliding of the time window in the current processing cycle to obtain the target casting speed in the next processing cycle includes:

[0008] After each sliding of the time window, determining a fine adjustment amount based on an actual average pulling speed at least part of the time within the window time of the time window;

[0009] Determining a total adjustment amount based on the fine adjustment amount determined after each sliding of the time window;

[0010] Based on the total adjustment amount and the preset basic casting speed in the next processing cycle, a target casting speed in the next processing cycle is determined.

[0011] In a possible implementation, determining the total adjustment amount based on the fine adjustment amount determined after each sliding of the time window includes:

[0012] The fine adjustment amount determined after each sliding of the time window is integrated to obtain a first integral value as the total adjustment amount.

[0013] In a possible implementation, determining the target casting speed in the next processing cycle based on the total adjustment amount and the preset basic casting speed in the next processing cycle includes:

[0014] The sum of the preset basic pulling speed in the next processing cycle and the total adjustment amount is determined as the target pulling speed in the next processing cycle.

[0015] In a possible implementation, determining the fine-tuning amount based on the actual average pulling speed during at least part of the time window includes:

[0016] Determine a difference between an actual average pulling speed at an end time and an actual average pulling speed at a start time within the time window to obtain a first difference;

[0017] comparing the first difference with the difference interval;

[0018] Based on the comparison result, the fine adjustment amount is determined.

[0019] In a possible implementation, after determining the difference between the actual average pulling speed at the end time and the actual average pulling speed at the start time within the window time of the time window to obtain a first difference, and before comparing the difference with the difference interval, the method further includes:

[0020] Obtaining a target pulling speed at each moment within the time window;

[0021] For each moment within the time window, determining a difference between the actual average pulling speed and the target pulling speed at that moment to obtain a second difference;

[0022] Integrating the second difference at each moment within the time window to obtain a second integral value, wherein the second integral value is used to represent an average fluctuation of the actual average pulling speed within the time window;

[0023] determining an upper limit of the difference range based on the second integral value and the first coefficient;

[0024] A lower limit of the difference range is determined based on the second integral value and the second coefficient.

[0025] In a possible implementation, determining the fine-tuning amount based on the comparison result includes:

[0026] In response to the first difference being within the difference interval, determining the fine adjustment amount to be a first adjustment amount;

[0027] In response to the first difference being greater than an upper limit of the difference interval, determining the fine adjustment amount to be a second adjustment amount;

[0028] In response to the first difference being less than a lower limit of the difference interval, the fine adjustment amount is determined to be a third adjustment amount.

[0029] In a second aspect, an embodiment of the present invention provides a crystal growth control device, comprising:

[0030] An acquisition module is configured to acquire, during the crystal isodiameter growth process, an actual average pulling speed at least at part of a window time within a preset time window, wherein the time window slides once every first time period;

[0031] an adjustment module configured to adjust a preset basic casting speed in a next processing cycle based on an actual average casting speed during at least a portion of the window time after each sliding of the time window in the current processing cycle, taking a second time as a processing cycle, to obtain a target casting speed in the next processing cycle, and to control the heating power in the next processing cycle based on the target casting speed in the next processing cycle, wherein the second time is greater than the first time.

[0032] In a possible implementation, the adjustment module is specifically configured to:

[0033] After each sliding of the time window, determining a fine adjustment amount based on an actual average pulling speed at least part of the time within the window time of the time window;

[0034] Determining a total adjustment amount based on the fine adjustment amount determined after each sliding of the time window;

[0035] Based on the total adjustment amount and the preset basic casting speed in the next processing cycle, a target casting speed in the next processing cycle is determined.

[0036] In a possible implementation, the adjustment module is specifically configured to:

[0037] The fine adjustment amount determined after each sliding of the time window is integrated to obtain a first integral value as the total adjustment amount.

[0038] In a possible implementation, the adjustment module is specifically configured to:

[0039] The sum of the preset basic pulling speed in the next processing cycle and the total adjustment amount is determined as the target pulling speed in the next processing cycle.

[0040] In a possible implementation, the adjustment module is specifically configured to:

[0041] Determine a difference between an actual average pulling speed at an end time and an actual average pulling speed at a start time within the time window to obtain a first difference;

[0042] comparing the first difference with the difference interval;

[0043] Based on the comparison result, the fine adjustment amount is determined.

[0044] In a possible implementation, the adjustment module is specifically configured to:

[0045] Obtaining a target pulling speed at each moment within the time window;

[0046] For each moment within the time window, determining a difference between the actual average pulling speed and the target pulling speed at that moment to obtain a second difference;

[0047] Integrating the second difference at each moment within the time window to obtain a second integral value, wherein the second integral value is used to represent an average fluctuation of the actual average pulling speed within the time window;

[0048] determining an upper limit of the difference range based on the second integral value and the first coefficient;

[0049] A lower limit of the difference range is determined based on the second integral value and the second coefficient.

[0050] In a possible implementation, the adjustment module is specifically configured to:

[0051] In response to the first difference being within the difference interval, determining the fine adjustment amount to be a first adjustment amount;

[0052] In response to the first difference being greater than an upper limit of the difference interval, determining the fine adjustment amount to be a second adjustment amount;

[0053] In response to the first difference being less than a lower limit of the difference interval, the fine adjustment amount is determined to be a third adjustment amount.

[0054] In a third aspect, an embodiment of the present invention provides a crystal growth control device, comprising a memory, a processor, and a computer program stored on the memory and executable on the processor, wherein the processor implements the method described in any one of the first aspects when executing the computer program.

[0055] In a fourth aspect, an embodiment of the present invention provides a crystal obtained by using the crystal growth control method as described in any one of the first aspects.

[0056] In an embodiment of the present invention, during the crystal isodiametric growth process, in each processing cycle, the preset basic pulling speed in the next processing cycle is adjusted using the actual average pulling speed of at least part of the window time after each sliding of the preset time window in the current processing cycle, thereby obtaining the target pulling speed in the next processing cycle. In this way, when entering the next processing cycle, the basis for the final heating control is the adjusted target pulling speed. Since the target pulling speed is obtained in real time after adjustment based on the actual average pulling speed of the processing cycle before the processing cycle, that is, the actual average pulling speed of the current crystal is taken into account, the actual average pulling speed trends of different crystals may be different, and thus the target pulling speed after adjustment is also different. Compared with the above-mentioned related technologies, the target pulling speeds ultimately adopted by different crystals are not the same set of fixed target pulling speeds, but are target pulling speeds optimized to match the crystal requirements after the above-mentioned adjustment process. Therefore, the deviation between the target pulling speed and the actual average pulling speed can be reduced, thereby reducing the probability of crystal edge breakage and improving production efficiency. BRIEF DESCRIPTION OF THE DRAWINGS

[0057] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the following briefly introduces the drawings required for use in the description of the embodiments of the present invention. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative labor.

[0058] Figure 1 A flow chart of a crystal growth control method according to an embodiment of the present invention is shown;

[0059] Figure 2 A flow chart of a crystal growth control method according to an embodiment of the present invention is shown;

[0060] Figure 3 A schematic diagram of a pulling speed curve in an embodiment of the present invention is shown;

[0061] Figure 4 A schematic structural diagram of a crystal growth control device according to an embodiment of the present invention is shown;

[0062] Figure 5 A schematic structural diagram of a crystal growth control device in an embodiment of the present invention is shown. DETAILED DESCRIPTION

[0063] The following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of them. All other embodiments obtained by ordinary technicians in this field based on the embodiments of the present invention without making any creative efforts shall fall within the scope of protection of the present invention.

[0064] Figure 1 FIG. 1 is a flow chart showing a method for controlling crystal growth according to an embodiment of the present invention. Figure 1 As shown, a crystal growth control method provided in this embodiment is applied to a crystal growth control device and includes at least the following steps:

[0065] Step 101 : During the crystal isodiameter growth process, an actual average pulling speed at least part of a window time of a preset time window is obtained, and the time window slides once every first time period.

[0066] In practical applications, in the process of growing silicon single crystals by the Czochralski method, isodiametric growth is required. Therefore, the crystal isodiametric growth process here can be the crystal growth process of silicon single crystals based on the Czochralski method.

[0067] The time window is a time-based window that includes a certain length of time, which is the window time. The time window is a sliding time window that slides once every first time, and the length of the window time remains unchanged. For example, the window time of the preset time window is 500s, and it slides once every 1s. Assuming that the time window includes the period from 0s to 500s before sliding, then after sliding once, it includes the period from 1s to 501s, and the length of the window time remains unchanged. In implementation, a time window can be preset in the crystal growth control device, and the length of the window time of the time window and the first time of sliding once can be preset as needed. Exemplarily, the window time of the above-mentioned time window can be 100s to 3600s, and exemplary, it is 500s. The first time can be 1s.

[0068] In practical applications, the crystal growth control device can obtain the actual average pulling speed at each moment, based on which the actual average pulling speed of at least part of the time within the window time can be obtained.

[0069] Step 102: Using the second time as a processing period, the preset base casting speed for the next processing period is adjusted based on the actual average casting speed during at least a portion of the window time after each sliding of the time window in the current processing period to obtain a target casting speed for the next processing period. The heating power is controlled based on the target casting speed for the next processing period in the next processing period. The second time is greater than the first time. The second time can be set according to actual circumstances. For example, the second time can be less than 1800 seconds, and for example, 10 seconds.

[0070] In practical applications, before crystal growth begins, a preset base pulling speed can be set through an input operation in a crystal growth control device. The input data for this input operation is a set of slope values ​​of the preset base pulling speed with respect to the crystal growth length, exemplified by [(L1, V1), (L2, V2), (L3, V3), …, (Ln, Vn)], where Ln represents a crystal growth length during the crystal growth process and Vn represents the preset base pulling speed corresponding to Ln. Thus, based on the input data of the input operation, a fitting curve of the preset base pulling speed and the crystal growth length can be obtained.

[0071] In this step, the preset base pulling speed is adjusted based on the final target pulling speed. In practice, the second time period is defined as the processing cycle, and the second time period is greater than or equal to the first time period during which the time window slides once. That is, the time window slides at least once within a processing cycle. Within each processing cycle, the preset base pulling speed for the next processing cycle is adjusted based on the actual average pulling speed for at least a portion of the window time period after each sliding of the time window within the current processing cycle, to obtain the target pulling speed for the next processing cycle. When the next processing cycle begins, the heating power is controlled based on the deviation between the actual average pulling speed and the adjusted target pulling speed, thereby achieving uniform crystal diameter growth.

[0072] In an embodiment of the present invention, during the crystal isodiametric growth process, in each processing cycle, the preset basic pulling speed in the next processing cycle is adjusted using the actual average pulling speed of at least part of the window time after each sliding of the preset time window in the current processing cycle, thereby obtaining the target pulling speed in the next processing cycle. In this way, when entering the next processing cycle, the basis for the final heating control is the adjusted target pulling speed. Since the target pulling speed is obtained in real time after adjustment based on the actual average pulling speed of the processing cycle before the processing cycle, that is, the actual average pulling speed of the current crystal is taken into account, the actual average pulling speed trends of different crystals may be different, and thus the target pulling speed after adjustment is also different. Compared with the above-mentioned related technologies, the target pulling speeds ultimately adopted by different crystals are not the same set of fixed target pulling speeds, but are target pulling speeds optimized to match the crystal requirements after the above-mentioned adjustment process. Therefore, the deviation between the target pulling speed and the actual average pulling speed can be reduced, thereby reducing the probability of crystal edge breakage and improving production efficiency.

[0073] In an exemplary embodiment, with the second time period as the processing cycle, the preset base speed for the next processing cycle is adjusted based on the actual average speed for at least a portion of the window time after each sliding of the time window in the current processing cycle, thereby obtaining a target speed for the next processing cycle. Specifically, this may include: determining a fine-tuning amount based on the actual average speed for at least a portion of the window time after each sliding of the time window; determining a total adjustment amount based on the fine-tuning amount determined after each sliding of the time window; and determining the target speed for the next processing cycle based on the total adjustment amount and the preset base speed for the next processing cycle. In this embodiment, after each sliding of the time window, a fine-tuning amount corresponding to the sliding is determined, and then a total adjustment amount is determined by integrating all fine-tuning amounts. In other words, an overall adjustment trend can be determined, thereby enabling more stable adjustment and avoiding large fluctuations.

[0074] In an exemplary embodiment, a total adjustment amount is determined based on the micro-adjustment amount determined after each sliding of the time window. This can be specifically implemented by integrating the micro-adjustment amount determined after each sliding of the time window to obtain a first integral value, which serves as the total adjustment amount. In this embodiment, the integration method can simply, quickly, and accurately determine the total adjustment amount by integrating the micro-adjustment amounts determined after each sliding. Of course, other methods can also be used to obtain the total adjustment amount, and these examples are not given here one by one.

[0075] In an exemplary embodiment, a target casting speed for the next processing cycle is determined based on the total adjustment amount and a preset base casting speed for the current processing cycle. This can be achieved by summing the preset base casting speed for the next processing cycle and the total adjustment amount to determine the target casting speed for the next processing cycle. In this embodiment, this summation method allows for a simpler, faster, and more accurate determination of the target casting speed. Of course, other methods can also be used to determine the target casting speed, and these methods will not be listed here.

[0076] In an exemplary embodiment, a fine-tuning adjustment is determined based on the actual average casting speed at at least a portion of the time window. This is specifically implemented by: determining the difference between the actual average casting speed at the end of the time window and the actual average casting speed at the start of the time window to obtain a first difference; comparing the first difference with a difference interval; and determining the fine-tuning adjustment based on the comparison result. Here, the difference between the actual average casting speed at the end and the actual average casting speed at the start, i.e., the first difference, can represent the change in the actual average casting speed at the end relative to the start. In this embodiment, by comparing the first difference with the difference interval, the comparison result obtained can reflect the change in the actual average casting speed at the end relative to the start. Based on this comparison result, the fine-tuning adjustment can be determined more precisely.

[0077] In an exemplary embodiment, based on the comparison result, the fine-tuning amount is determined, and its specific implementation method may include: in response to the first difference being within the difference interval, determining the fine-tuning amount as the first adjustment amount; in response to the first difference being greater than the upper limit of the difference interval, determining the fine-tuning amount as the second adjustment amount; in response to the first difference being less than the lower limit of the difference interval, determining the fine-tuning amount as the third adjustment amount.

[0078] In practical applications, if the first difference falls within the difference interval, it is considered that the change in the actual average casting speed at the end time relative to the start time is small. In this case, a small adjustment or no adjustment can be made. In other words, for example, the first adjustment amount can be zero. If the first difference is greater than the upper limit of the difference interval, it is considered that the actual average casting speed at the end time relative to the start time has increased and changed significantly. In this case, a second adjustment amount can be used to increase the preset base casting speed to obtain a target casting speed with a smaller deviation from the actual average casting speed. If the first difference is less than the lower limit of the difference interval, it is considered that the actual average casting speed at the end time relative to the start time has decreased and changed significantly. In this case, a third adjustment amount can be used to decrease the preset base casting speed to obtain a target casting speed with a smaller deviation from the actual average casting speed. In this way, the determined fine-tuning amount is more precise and accurate.

[0079] During specific implementation, it can be determined whether the first difference is less than the upper limit of the difference interval. If not, the fine-tuning amount is determined to be the second adjustment amount. If so, continue to determine whether the first difference is greater than the lower limit of the difference interval. If not, the fine-tuning amount is determined to be the third adjustment amount. If so, the fine-tuning amount is determined to be the first fine-tuning amount.

[0080] In an exemplary embodiment, after determining the difference between the actual average pulling speed at the end time and the actual average pulling speed at the start time within the window time of the time window to obtain a first difference, before comparing the difference with the difference interval, as follows: Figure 2 As shown, the above-mentioned crystal growth control method may further include:

[0081] Step 201: Obtain a target pulling speed at each moment within a time window.

[0082] The target casting speed at the time when no adjustment process is performed is the preset basic casting speed. The target casting speed at the time when the adjustment process is performed is the target casting speed obtained after the adjustment process.

[0083] Step 202: For each moment in the time window, determine the difference between the actual average pulling speed and the target pulling speed at that moment to obtain a second difference.

[0084] The second difference corresponding to each moment can reflect the deviation between the actual average pulling speed and the target pulling speed at that moment.

[0085] Step 203: Integrate the second difference at each moment within the window time of the time window to obtain a second integral value, where the second integral value is used to represent the average fluctuation of the actual average pulling speed in the time window.

[0086] Step 204: Determine an upper limit of the difference range based on the second integral value and the first coefficient.

[0087] Specifically, the product of the second integral value and the first coefficient may be used as the upper limit of the difference range.

[0088] Step 205: Determine the lower limit of the difference range based on the second integral value and the second coefficient.

[0089] Specifically, the product of the second integral value and the second coefficient may be used as the lower limit of the difference range.

[0090] In an embodiment of the present invention, the average fluctuation of the actual average pulling speed in the time window is obtained by integrating the difference between the actual average pulling speed and the target pulling speed at each moment in the window time of the time window. Based on this, the upper and lower limits of the difference interval are determined in real time in combination with the preset first coefficient and second coefficient, providing a more reasonable reference range for measuring the change of the above-mentioned first difference.

[0091] Of course, a difference interval may also be preset in the crystal growth control device based on statistical experience.

[0092] The following describes a crystal growth control method provided by an embodiment of the present invention in more detail in conjunction with specific application scenarios.

[0093] This embodiment provides a method for automatically setting the target pulling speed in real time during the Czochralski method of silicon single crystal growth. During the constant diameter growth process, the target pulling speed at the current moment is set by correcting (i.e., adjusting) the preset base pulling speed set in the control system of the crystal growth control device based on the changing trend and fluctuation level of the actual average pulling speed of the crystal within a period of time before the current moment (i.e., the window time mentioned above). The specific scheme is as follows:

[0094] In the control system, manually set the preset base pulling speed as the constant diameter growth length increases in advance through the provided page. Enter [(L1, V1), (L2, V2), (L3, V3), ..., (Ln, Vn)]. Also set the time window: window time T1 = 500s, second time T2 = 10s, first fine-tuning amount = 0, second fine-tuning amount a = 0.1, third fine-tuning amount b = -0.05, first coefficient k1 = 1.8, and second coefficient k2 = 1.1. Where a and b are selected in the range (-1, 1). The first coefficient and second coefficient are selected in the range (-10, 10).

[0095] When growing a silicon single crystal using the Czochralski method, the crystal enters the isodiameter growth state and power control begins to intervene in the crystal growth control. The control process is as follows:

[0096] After entering the processing cycle, calculate the difference △v between the actual average pulling speeds of the crystal at the end and start times within T1 after the time window slides once per second in this processing cycle, and calculate the integral V_var of the difference between the actual average pulling speed and the target pulling speed at each moment within T1. Multiply V_var by k1 to obtain the upper limit x1 of the difference interval, multiply V_var by k2 to obtain the lower limit x2 of the difference interval, and compare the relationship between △v and (x1, x2). When △v ∈ (x1, x2), the micro-adjustment amount is 0. When △v > x1, the micro-adjustment amount is +a. When △v < x2, the micro-adjustment amount is b. The initial value of the total adjustment amount Vadj is taken as 0 and integrated once per second. After reaching T2, output the total adjustment amount Vadj. The target pulling speed V in the next processing cycle is V = Vn + Vadj.

[0097] In this embodiment, specifically, a crystal with a growth diameter of 252 mm and a 32-inch hot field is used, and the loading amount is 580 Kg. The crystal undergoes processes such as temperature adjustment, seeding, shoulder release, and shoulder turning growth, and enters the isodiametric growth process. In the initial stage of isodiametric growth, the instantaneous pulling speed of the crystal is mainly controlled by the crystal diameter. When the crystal length reaches 50 mm and the deviation between the actual diameter of the crystal and the target value is within ±2 mm, this solution starts to participate in the above control process:

[0098] The preset basic pulling speed at this crystal length is 75 - 80 mm / h, the actual average pulling speed of the crystal is 70 - 85 mm / hr, and the deviation range between the actual average pulling speed and the preset basic pulling speed is <10 mm / h. The calculation time interval for the difference △v and V_var of the actual average pulling speed is taken as 500 s forward from the time node of the crystal length of 50 mm. At this moment, V_var is obtained by integrating the difference between the actual average pulling speed and the target pulling speed per second within 500 s. The upper limit x1 of the difference interval is x1 = V_var * 1.8, and the lower limit x2 of the difference interval is x2 = V_var * 1.1. The difference △v = (actual average pulling speed in the right window of 500 s) - (actual average pulling speed in the left window of 500 s). For example, at this time, the value of △v is 85 - 80 = 5 mm / h, and the initial value of Vadj is taken as 0. When x2 < △v < x1, the micro-adjustment amount = 0; when △v > x1, Vadj = Vadj + a, that is, Vadj = 0 + 0.1 = 0.1 mm / h; when △v < x2, Vadj = Vadj + b, that is, Vadj = 0 - 0.05 = -0.05 mm / h; this process is executed once every 1 s. In the next second, the time window T1 slides backward by 1 s.

[0099] When all calculations are completed within the T2 cycle (10 times), Vadj is equal to the integral value of the 10 fine-tuning amounts. In this way, the target pulling speed for the next T2 = Vadj of the previous T2 + the preset basic pulling speed for the next T2. Therefore, the target pulling speed can be adjusted every 10 seconds according to the changes in the actual average pulling speed, so that the target pulling speed can better match the actual average pulling speed, avoid excessive heater power and frequent adjustments caused by unreasonable target pulling speed settings or poor silicon liquid temperature, and reduce the occurrence of crystal edge breakage. Figure 3 As can be seen from the casting speed curve shown, compared with the preset basic casting speed 303, the deviation between the actual average casting speed 301 and the target casting speed 302 obtained after the adjustment process is smaller.

[0100] The solution in this embodiment achieved an average constant-diameter wire breakage rate of 17.4%, 15.58% lower than the 32.98% before optimization. The actual calculated target pulling speeds for different ingots vary, and the target pulling speeds are more tailored to crystal growth requirements, thus achieving customization of the target pulling speed.

[0101] Figure 4 FIG. 1 shows a schematic structural diagram of a crystal growth control device according to an embodiment of the present invention. Figure 4 As shown, an embodiment of the present invention provides a crystal growth control device 400, comprising:

[0102] An acquisition module 401 is configured to acquire, during the crystal isodiameter growth process, an actual average pulling speed at least at part of a preset time window, wherein the time window slides once every first time period.

[0103] Adjustment module 402 is configured to adjust a preset base casting speed for a next processing cycle based on the actual average casting speed during at least a portion of the window time after each sliding of the time window in the current processing cycle, using a second time period as a processing cycle, to obtain a target casting speed for the next processing cycle, and to control heating power in the next processing cycle based on the target casting speed for the next processing cycle, wherein the second time period is greater than the first time period.

[0104] In a possible implementation, the adjustment module is specifically configured to:

[0105] After each sliding of the time window, determining a fine adjustment amount based on an actual average pulling speed at least part of the time within the window time of the time window;

[0106] Determine the total adjustment amount based on the micro-adjustment amount determined after each sliding of the time window;

[0107] Based on the total adjustment amount and the preset basic casting speed in the next processing cycle, the target casting speed in the next processing cycle is determined.

[0108] In a possible implementation, the adjustment module is specifically configured to:

[0109] The fine adjustment amount determined after each sliding of the time window is integrated to obtain a first integral value as the total adjustment amount.

[0110] In a possible implementation, the adjustment module is specifically configured to:

[0111] The sum of the preset basic pulling speed and the total adjustment amount in the next processing cycle is determined as the target pulling speed in the next processing cycle.

[0112] In a possible implementation, the adjustment module is specifically configured to:

[0113] Determine the difference between the actual average pulling speed at the end time and the actual average pulling speed at the start time within the time window to obtain a first difference;

[0114] comparing the first difference value with the difference interval;

[0115] Based on the comparison result, the fine adjustment amount is determined.

[0116] In a possible implementation, the adjustment module is specifically configured to:

[0117] Obtain the target pulling speed at each moment within the window time of the time window;

[0118] For each moment within the window time of the time window, determine the difference between the actual average pulling speed and the target pulling speed at the moment to obtain a second difference;

[0119] Integrating the second difference at each moment within the window time of the time window to obtain a second integral value, where the second integral value is used to characterize an average fluctuation of the actual average pulling speed within the time window;

[0120] determining an upper limit of the difference range based on the second integral value and the first coefficient;

[0121] A lower limit of the difference interval is determined based on the second integrated value and the second coefficient.

[0122] In a possible implementation, the adjustment module is specifically configured to:

[0123] In response to the first difference being within the difference interval, determining the fine adjustment amount as the first adjustment amount;

[0124] In response to the first difference being greater than an upper limit of the difference interval, determining the fine adjustment amount to be a second adjustment amount;

[0125] In response to the first difference being less than a lower limit of the difference interval, the fine adjustment amount is determined to be the third adjustment amount.

[0126] The functions of the modules in the devices of the embodiments of the present invention can be found in the corresponding descriptions in the above-mentioned embodiments of the crystal growth control method, which will not be described in detail here.

[0127] An embodiment of the present invention further provides a crystal growth control device, comprising a memory, a processor, and a computer program stored in the memory and executable on the processor. When the processor executes the computer program, a crystal growth control method as in any of the above embodiments is implemented.

[0128] Figure 5 FIG. 1 shows a schematic structural diagram of a crystal growth control device according to an embodiment of the present invention. Figure 5 As shown, the device may include: a processor 501, a communication interface 502, a memory 503, and a communication bus 504, wherein the processor 501, the communication interface 502, and the memory 503 communicate with each other via the communication bus 504. The processor 501 may call a computer program in the memory 503 to execute the crystal growth control method in any of the above embodiments.

[0129] An embodiment of the present invention further provides a crystal, which is obtained by using the crystal growth control method in any of the above embodiments.

[0130] It should be noted that, for the sake of simplicity, the method embodiments are described as a series of action combinations, but those skilled in the art should be aware that the embodiments of the present application are not limited by the order of the actions described, because according to the embodiments of the present application, certain steps can be performed in other orders or simultaneously. Secondly, those skilled in the art should also be aware that the embodiments described in the specification are all preferred embodiments, and the actions involved are not necessarily required by the embodiments of the present application.

[0131] It should be noted that, in this document, the terms "comprises," "includes," or any other variations thereof are intended to encompass non-exclusive inclusion, such that a process, method, article, or apparatus comprising a series of elements includes not only those elements but also other elements not explicitly listed, or elements inherent to such process, method, article, or apparatus. In the absence of further limitations, an element defined by the phrase "comprising a ..." does not exclude the presence of other identical elements in the process, method, article, or apparatus comprising the element.

[0132] Through the description of the above embodiments, those skilled in the art can clearly understand that the above-mentioned embodiment methods can be implemented by means of software plus the necessary general hardware platform, and of course can also be implemented by hardware, but in many cases the former is a better embodiment. Based on this understanding, the technical solution of the present invention, or the part that contributes to the prior art, can be embodied in the form of a software product, which is stored in a storage medium (such as ROM / RAM, magnetic disk, optical disk), and includes a number of instructions for enabling a terminal (which can be a mobile phone, computer, server, air conditioner, or network device, etc.) to execute the methods described in each embodiment of the present invention.

[0133] The embodiments of the present invention are described above in conjunction with the accompanying drawings, but the present invention is not limited to the above-mentioned specific implementation methods. The above-mentioned specific implementation methods are merely illustrative and not restrictive. Under the guidance of the present invention, ordinary technicians in this field can also make many forms without departing from the scope of protection of the present invention and the claims, all of which are protected by the present invention.

Claims

1. A method for controlling crystal growth, characterized in that: include: During the crystal isodiameter growth process, obtaining an actual average pulling speed at least part of a preset time window, wherein the time window slides once every first time period; Taking a second time as a processing cycle, adjusting a preset basic casting speed in a next processing cycle based on an actual average casting speed during at least a portion of the window time after each sliding of the time window in the current processing cycle to obtain a target casting speed in the next processing cycle, and controlling the heating power in the next processing cycle based on a deviation between the actual average casting speed and the target casting speed in the next processing cycle, wherein the second time is greater than the first time; The method of taking the second time as the processing cycle and adjusting the preset basic casting speed in the next processing cycle based on the actual average casting speed at at least part of the window time after each sliding of the time window in the current processing cycle to obtain the target casting speed in the next processing cycle includes: After each sliding of the time window, determining the difference between the actual average pulling speed at the end time and the actual average pulling speed at the start time within the window time of the time window to obtain a first difference; comparing the first difference with the difference interval; Based on the comparison result, determining the fine-tuning amount; Determining a total adjustment amount based on the fine adjustment amount determined after each sliding of the time window; Based on the total adjustment amount and the preset basic casting speed in the next processing cycle, a target casting speed in the next processing cycle is determined.

2. The crystal growth control method according to claim 1, wherein: The determining of the total adjustment amount based on the fine adjustment amount determined after each sliding of the time window includes: The fine adjustment amount determined after each sliding of the time window is integrated to obtain a first integral value as the total adjustment amount.

3. The crystal growth control method according to claim 1, wherein: Determining the target casting speed in the next processing cycle based on the total adjustment amount and the preset basic casting speed in the next processing cycle includes: The sum of the preset basic pulling speed in the next processing cycle and the total adjustment amount is determined as the target pulling speed in the next processing cycle.

4. The crystal growth control method according to claim 1, wherein: After determining the difference between the actual average pulling speed at the end time and the actual average pulling speed at the start time within the window time of the time window to obtain a first difference, and before comparing the difference with the difference interval, the method further includes: Obtaining a target pulling speed at each moment within the time window; For each moment within the time window, determining a difference between the actual average pulling speed and the target pulling speed at that moment to obtain a second difference; Integrating the second difference at each moment within the time window to obtain a second integral value, wherein the second integral value is used to represent an average fluctuation of the actual average pulling speed within the time window; determining an upper limit of the difference range based on the second integral value and the first coefficient; A lower limit of the difference range is determined based on the second integral value and the second coefficient.

5. The crystal growth control method according to claim 1, wherein: Determining the fine-tuning amount based on the comparison result includes: In response to the first difference being within the difference interval, determining the fine adjustment amount to be a first adjustment amount; In response to the first difference being greater than an upper limit of the difference interval, determining the fine adjustment amount to be a second adjustment amount; In response to the first difference being less than a lower limit of the difference interval, the fine adjustment amount is determined to be a third adjustment amount.

6. A crystal growth control device, characterized in that: include: An acquisition module is configured to acquire, during the crystal isodiameter growth process, an actual average pulling speed at least at part of a window time within a preset time window, wherein the time window slides once every first time period; an adjustment module configured to adjust a preset base casting speed in a next processing cycle based on an actual average casting speed during at least a portion of a window time after each sliding of the time window in the current processing cycle, taking a second time as a processing cycle, to obtain a target casting speed in the next processing cycle, and to control heating power in the next processing cycle based on a deviation between the actual average casting speed and the target casting speed in the next processing cycle, wherein the second time is greater than the first time; The adjustment module is specifically used to: After each sliding of the time window, determining the difference between the actual average pulling speed at the end time and the actual average pulling speed at the start time within the window time of the time window to obtain a first difference; comparing the first difference with the difference interval; Based on the comparison result, determining the fine-tuning amount; Determine the total adjustment amount based on the micro-adjustment amount determined after each sliding of the time window; Based on the total adjustment amount and the preset basic casting speed in the next processing cycle, the target casting speed in the next processing cycle is determined.

7. A crystal growth control device comprising a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein: When the processor executes the computer program, the method according to any one of claims 1 to 5 is implemented.

8. A crystal, characterized in that The crystal is obtained by using the crystal growth control method according to any one of claims 1 to 5.

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