Magnetic memory and methods of making the same

Abstract

The present disclosure relates to the technical field of semiconductor devices and manufacturing technology thereof, in particular to a magnetic memory and a manufacturing method thereof, the magnetic memory comprising at least: an anti-ferromagnetic layer, a material of the anti-ferromagnetic layer being a non-collinear anti-ferromagnetic material; and a magnetic tunnel junction disposed on the anti-ferromagnetic layer, the magnetic tunnel junction comprising, from bottom to top, a free layer, a tunneling barrier layer and a reference layer; wherein when the anti-ferromagnetic layer is supplied with a current, a spin-orbit torque effect of the anti-ferromagnetic layer is utilized to change a direction of an exchange bias field formed by the anti-ferromagnetic layer and the free layer, and then to flip a magnetic moment direction of the free layer. The magnetic moment flipping can be achieved by means of the spin-orbit torque effect of the anti-ferromagnetic layer of the non-collinear anti-ferromagnetic material, so that the write-in current is greatly reduced, and the power consumption of the magnetic memory is reduced, and the magnetic memory is easier to drive.

Description

TECHNICAL FIELD

[0001] The present disclosure relates to the technical field of semiconductor devices and manufacturing technology thereof, and particularly relates to a magnetic memory and a manufacturing method thereof. BACKGROUND

[0002] With the continuous emergence of emerging industries such as the Internet of Things and artificial intelligence, people's demand for information is increasing, thereby making information storage technology face increasingly severe challenges. At present, with the continuous advancement of process technology, a magnetic memory with characteristics such as high speed, low power consumption, non-volatility and radiation resistance has appeared.

[0003] The development of magnetic memories has experienced three generations of changes. Currently, many international leading enterprises have begun to layout the latest third-generation magnetic memory, namely, spin orbit torque magnetic random access memory (SOT-MRAM). The magnetic memory using the intrinsic exchange bias effect of the antiferromagnetic layer and the ferromagnetic layer is considered to be the fourth-generation magnetic memory.

[0004] However, the fourth-generation magnetic memory currently studied is mainly for collinear antiferromagnetic materials such as iridium manganese (IrMn) and platinum manganese (PtMn), and the internal flipping mainly depends on the current thermal effect, which leads to a high write current, thereby being not conducive to driving the magnetic memory, and the power consumption of this type of magnetic memory is large. SUMMARY

[0005] In order to solve the problems in the related art, the present disclosure provides a magnetic memory and a manufacturing method thereof.

[0006] In a first aspect, the present disclosure provides a magnetic memory.

[0007] Specifically, the magnetic memory at least comprises:

[0008] an antiferromagnetic layer, a material of the antiferromagnetic layer being a non-collinear antiferromagnetic material;

[0009] a magnetic tunnel junction, disposed on the antiferromagnetic layer, the magnetic tunnel junction comprising, from bottom to top, a free layer, a tunnel barrier layer and a reference layer;

[0010] When the antiferromagnetic layer passes through a current, the spin orbit torque effect of the antiferromagnetic layer is used to change the exchange bias field direction formed by the antiferromagnetic layer and the free layer, thereby flipping the magnetic moment direction of the free layer.

[0011] In an implementation manner of the present disclosure, the non-collinear antiferromagnetic material comprises manganese (Mn) xand Y, X≥3; wherein, the Y includes but is not limited to any one of the following: gallium Ga, germanium Ge, iridium Ir, rhodium Rh, tin Sn, platinum Pt;

[0012] The film thickness of the antiferromagnetic layer is between 1 nm and 100 nm.

[0013] In an implementation manner of the embodiment of the present disclosure, the magnetic memory further includes:

[0014] An insertion layer is arranged between the free layer and the antiferromagnetic layer, the material of the insertion layer is an insulating material, and the film thickness of the insertion layer is between 0.1 nm and 3 nm.

[0015] In an implementation manner of the embodiment of the present disclosure, the magnetic memory further includes:

[0016] A cover layer is arranged on the side of the reference layer away from the tunneling barrier layer.

[0017] In a second aspect, the present disclosure provides a manufacturing method of a magnetic memory.

[0018] Specifically, the method includes:

[0019] forming an antiferromagnetic layer, the material of the antiferromagnetic layer being a non-collinear antiferromagnetic material;

[0020] forming, from bottom to top, a free layer, a tunneling barrier layer and a reference layer on the antiferromagnetic layer;

[0021] When the antiferromagnetic layer passes through a current, the spin-orbit torque effect of the antiferromagnetic layer is used to change the exchange bias field direction formed by the antiferromagnetic layer and the free layer, and then the magnetic moment direction of the free layer is flipped.

[0022] In an implementation manner of the embodiment of the present disclosure, the non-collinear antiferromagnetic material includes manganese Mn x and Y, X≥3; wherein, the Y includes but is not limited to any one of the following: gallium Ga, germanium Ge, iridium Ir, rhodium Rh, tin Sn, platinum Pt;

[0023] The forming of the antiferromagnetic layer includes:

[0024] The non-collinear antiferromagnetic material Mn x Y is sputtered by a sputtering process.

[0025] The non-collinear antiferromagnetic material Mn x Y is etched to form the antiferromagnetic layer with a film thickness between 1 nm and 100 nm.

[0026] In an implementation manner of the embodiment of the present disclosure, the method further includes:

[0027] forming an insertion layer on the antiferromagnetic layer, the insertion layer being between the free layer and the antiferromagnetic layer.

[0028] In an implementation manner of the embodiment of the present disclosure, the material of the insertion layer is an insulating material.

[0029] The forming of the insertion layer on the antiferromagnetic layer comprises:

[0030] The insulating material is sputtered on the antiferromagnetic layer by using a sputtering process to form the insertion layer with a film thickness between 0.1 nm and 3 nm.

[0031] In an implementation manner of the embodiment of the present disclosure, the material of the insertion layer is an insulating material.

[0032] The forming of the insertion layer on the antiferromagnetic layer comprises:

[0033] The insulating material is sputtered on the antiferromagnetic layer by using a sputtering process, and the insulating material is etched based on the free layer to form the insertion layer with a film thickness between 0.1 nm and 3 nm.

[0034] In an implementation manner of the embodiment of the present disclosure, the method further comprises:

[0035] forming a covering layer on a side of the reference layer away from the tunneling barrier layer.

[0036] The magnetic memory provided by the embodiment of the present disclosure at least comprises: an antiferromagnetic layer, the material of the antiferromagnetic layer is a non-collinear antiferromagnetic material; a magnetic tunnel junction, disposed on the antiferromagnetic layer, the magnetic tunnel junction comprises a free layer, a tunneling barrier layer and a reference layer from bottom to top in sequence; wherein when the antiferromagnetic layer passes through a current, the spin-orbit torque effect of the antiferromagnetic layer is used to change the exchange bias field direction formed by the antiferromagnetic layer and the free layer, and then the magnetic moment direction of the free layer is flipped. Through the magnetic memory, the magnetic moment flipping can be performed by means of the spin-orbit torque effect of the non-collinear antiferromagnetic material in the antiferromagnetic layer, so as to greatly reduce the write current, and then reduce the power consumption of the magnetic memory, and the magnetic memory is also easier to drive.

[0037] It should be understood that the above general description and the following detailed description are only exemplary and explanatory, and cannot limit the present disclosure. BRIEF DESCRIPTION OF DRAWINGS

[0038] Other features, objects and advantages of the present disclosure will become more apparent from the following detailed description of the non-limiting embodiments combined with the attached drawings. In the drawings:

[0039] Figure 1 A structure schematic diagram of a magnetic memory according to an embodiment of the present disclosure is shown.

[0040] Figure 2 FIG. 6 shows another structural schematic diagram of the magnetic memory according to an embodiment of the present disclosure;

[0041] Figure 3 FIG. 7 shows still another structural schematic diagram of the magnetic memory according to an embodiment of the present disclosure;

[0042] Figure 4 FIG. 8 shows a flowchart of a manufacturing method of the magnetic memory according to an embodiment of the present disclosure;

[0043] Figure 5 FIG. 9 shows a process flow schematic diagram of preparation of a magnetic tunnel junction in the magnetic memory according to an embodiment of the present disclosure;

[0044] Figure 6 FIG. 10 shows still another structural schematic diagram of the magnetic memory according to an embodiment of the present disclosure. DETAILED DESCRIPTION

[0045] Hereinafter, exemplary embodiments of the present disclosure will be described in detail with reference to the accompanying drawings so as to be easily implemented by those skilled in the art. Also, parts irrelevant to the description of the exemplary embodiments are omitted in the accompanying drawings for the sake of clarity.

[0046] In the present disclosure, it should be understood that terms such as "include" or "have" are intended to indicate that there are features, numbers, steps, actions, components, parts or combinations thereof disclosed in the specification, and do not exclude the possibility of additional one or more features, numbers, steps, actions, components, parts or combinations thereof.

[0047] It should also be noted that the embodiments in the present disclosure and the features in the embodiments can be combined with each other without conflict. The present disclosure will be described in detail below with reference to the accompanying drawings and in conjunction with the embodiments.

[0048] In the present disclosure, if the operation of acquiring user information or user data or the operation of showing user information or user data to others is involved, the operation is an operation authorized, confirmed by the user, or actively selected by the user.

[0049] As mentioned above, with the continuous emergence of emerging industries such as Internet of Things and artificial intelligence, people's demand for information is increasing, which makes information storage technology face increasingly severe challenges. At present, with the continuous advancement of process technology, a magnetic memory with characteristics of high speed, low power consumption, non-volatility and radiation resistance has emerged.

[0050] The development of magnetic memories has experienced three generations of changes. Currently, many international leading enterprises have begun to layout the latest third-generation magnetic memory, spin orbit torque magnetic random access memory (SOT-MRAM), and the magnetic memory using the intrinsic exchange bias effect of the antiferromagnetic layer and the ferromagnetic layer is considered to be the fourth-generation magnetic memory.

[0051] However, the fourth-generation magnetic memory currently studied is mainly aimed at collinear antiferromagnetic materials such as iridium manganese IrMn and platinum manganese PtMn, and the internal flipping mainly depends on the current thermal effect, resulting in a high write current, which is not conducive to driving the magnetic memory, and the power consumption of this type of magnetic memory is large.

[0052] Based on the above technical defects, the embodiment of the present disclosure provides a magnetic memory, at least comprising: an antiferromagnetic layer, the material of the antiferromagnetic layer is a non-collinear antiferromagnetic material; a magnetic tunnel junction is arranged on the antiferromagnetic layer, the magnetic tunnel junction comprises a free layer, a tunnel barrier layer and a reference layer from bottom to top in sequence; wherein when the antiferromagnetic layer passes through the current, the spin orbit torque effect of the antiferromagnetic layer is used to change the exchange bias field direction formed by the antiferromagnetic layer and the free layer, and then the magnetic moment direction of the free layer is flipped.

[0053] In this way, by means of the spin orbit torque effect of the antiferromagnetic layer of the non-collinear antiferromagnetic material, the magnetic moment flipping is realized, thereby greatly reducing the write current, and further reducing the power consumption of the magnetic memory, and the magnetic memory is also easier to drive.

[0054] Figure 1 A structural schematic diagram of a magnetic memory according to an embodiment of the present disclosure is shown. As shown in the figure, Figure 1 The magnetic memory 100 at least comprises:

[0055] An antiferromagnetic layer 110, the material of the antiferromagnetic layer is a non-collinear antiferromagnetic material;

[0056] A magnetic tunnel junction 120 is arranged on the antiferromagnetic layer 110, the magnetic tunnel junction comprises a free layer 121, a tunnel barrier layer 122 and a reference layer 123 from bottom to top in sequence;

[0057] Wherein, when the antiferromagnetic layer 110 passes through the current, the spin orbit torque effect of the antiferromagnetic layer 110 is used to change the exchange bias field direction formed by the antiferromagnetic layer 110 and the free layer 121, and then the magnetic moment direction of the free layer 121 is flipped.

[0058] In an implementation manner of the embodiment of the present disclosure, the non-collinear antiferromagnetic material comprises manganese Mn xand Y, X≥3; wherein, the Y includes but is not limited to any one of: gallium Ga, germanium Ge, iridium Ir, rhodium Rh, tin Sn, platinum Pt; the film thickness of the anti-ferromagnetic layer is between 1nm and 100nm. Namely, the non-collinear anti-ferromagnetic material is Mn x Y.

[0059] In the implementation of the embodiment of the present disclosure, the magnetic memory 100 has in-plane anisotropy.

[0060] It should be understood that, in this embodiment, since the material of the anti-ferromagnetic layer 110 is a non-collinear anti-ferromagnetic material, the direction of the magnetic moment of the free layer can be driven to flip by the internal spin orbit torque (SOT) effect. Thus, the current is directly passed into the anti-ferromagnetic layer, the SOT effect of Y is used to drive the flipping, the exchange bias direction of the anti-ferromagnetic layer / free layer interface is changed, and then the magnetic moment of the free layer is flipped, the writing from "0" to "1" of the device is completed, and the data storage is realized. x Y is used to drive the flipping, the exchange bias direction of the anti-ferromagnetic layer / free layer interface is changed, and then the magnetic moment of the free layer is flipped, the writing from "0" to "1" of the device is completed, and the data storage is realized.

[0061] Exemplarily, the material of the free layer 121 can be a CoFeB alloy or a CoFe alloy with a common element ratio; the material of the tunnel barrier layer 122 can be magnesium oxide MgO; and the material of the fixed layer 123 is a CoFe alloy with a common element ratio.

[0062] In actual application, the materials of the free layer, the fixed layer and the tunnel barrier layer are not limited, and can be flexibly determined according to actual conditions.

[0063] In combination with Figure 1 , Figure 2 Another structural schematic diagram of the magnetic memory 100 according to the embodiment of the present disclosure is shown.

[0064] As Figure 2 shown, in the implementation of the embodiment of the present disclosure, the magnetic memory further includes:

[0065] An insertion layer 130 is arranged between the free layer 121 and the anti-ferromagnetic layer 110, and the material of the insertion layer 130 is an insulating material, and the film thickness of the insertion layer is between 0.1nm and 3nm.

[0066] Exemplarily, the insulating material can be aluminum oxide AlO x , magnesium oxide MgO or other possible materials.

[0067] In this embodiment, by setting the insertion layer of thin insulating material, the shunt of write current can be prevented, more current flows into the antiferromagnetic layer, the SOT effect inside the antiferromagnetic layer is enhanced, and the material elements in the antiferromagnetic layer are prevented from diffusing to the free layer without external magnetic field assistance.

[0068] In combination Figure 1 , Figure 3 Another structural schematic diagram of the magnetic memory 100 according to an embodiment of the present disclosure is shown.

[0069] As Figure 3 shown, in an implementation manner of the embodiment of the present disclosure, the magnetic memory further comprises:

[0070] The cover layer 140 is arranged on the side of the reference layer 123 away from the tunnel barrier layer 122.

[0071] In this embodiment, by setting the cover layer as protection or buffer, over-etching phenomenon can be prevented when opening hole etching on the top of the magnetic tunnel junction.

[0072] It should be noted that, compared with the antiferromagnetic layer of the in-plane anisotropy magnetic memory device in the related art, the antiferromagnetic layer in the magnetic memory provided in the embodiment of the present disclosure uses Mn x Y, a non-collinear antiferromagnetic material, when current is passed through the antiferromagnetic layer, the magnetic moment of the free layer can be flipped by means of the SOT effect inside the antiferromagnetic layer, instead of mainly relying on the thermal effect brought by the current, so that a high write current is not required, and the order of magnitude of the current is consistent with that of the spin orbit torque magnetic memory chip (Spin Orbit Torque MRAM, SOT-MRAM).

[0073] In addition, the in-plane anisotropy magnetic memory device in the related art passes current through the heavy metal orbit layer in the in-plane anisotropy magnetic memory device to indirectly flip the antiferromagnetic layer, while the magnetic memory provided in the embodiment of the present disclosure directly writes current into the antiferromagnetic layer in the magnetic memory, thereby improving the conversion efficiency of charge to spin current.

[0074] The embodiment of the present disclosure provides a magnetic memory, which can flip the magnetic moment by means of the spin orbit torque effect inside the antiferromagnetic layer of the non-collinear antiferromagnetic material, thereby greatly reducing the write current, and further reducing the power consumption of the magnetic memory, and the magnetic memory is easier to drive.

[0075] The embodiment of the present disclosure provides a manufacturing method of a magnetic memory, which can be applied to the magnetic memory 100 as shown in the above embodiments. Figure 1 As Figure 4 shown, a flowchart of the manufacturing method of the magnetic memory according to an embodiment of the present disclosure is shown. AsFigure 4 As shown in the figure, the manufacturing method comprises the following steps:

[0076] In S201, an anti-ferromagnetic layer is formed.

[0077] The material of the anti-ferromagnetic layer is a non-collinear anti-ferromagnetic material.

[0078] In S202, a free layer, a tunnel barrier layer and a reference layer are sequentially formed on the anti-ferromagnetic layer from bottom to top.

[0079] When the anti-ferromagnetic layer passes through an electric current, the spin-orbit torque effect of the anti-ferromagnetic layer is used to change the exchange bias field direction formed by the anti-ferromagnetic layer and the free layer, and then the magnetic moment direction of the free layer is flipped.

[0080] In the embodiment of the present disclosure, the non-collinear anti-ferromagnetic material is Mn x Y, X≥3; wherein Y includes but is not limited to Ga, Ge, Ir, Rh, Sn, Pt, etc.

[0081] It should be understood that in this embodiment, since the material of the anti-ferromagnetic layer is a non-collinear anti-ferromagnetic material, the magnetic moment direction of the free layer can be driven to flip by the internal spin-orbit torque (SOT) effect.

[0082] In the embodiment of the present disclosure, the free layer, the tunnel barrier layer and the reference layer are sequentially formed on the anti-ferromagnetic layer from bottom to top, which can specifically include: forming a free layer on the anti-ferromagnetic layer; forming a non-magnetic barrier layer on the side of the free layer away from the anti-ferromagnetic layer; and forming a fixed layer on the side of the non-magnetic barrier layer away from the free layer.

[0083] For example, the material of the free layer can be a commonly used CoFeB alloy or CoFe alloy; the material of the tunnel barrier layer can be magnesium oxide MgO; and the material of the fixed layer can be a commonly used CoFe alloy.

[0084] In actual application, the materials of the free layer, the fixed layer and the tunnel barrier layer are not limited, and can be flexibly determined according to actual conditions.

[0085] Based on the magnetic memory 100 as shown in the above embodiment, and the manufacturing method of the magnetic memory as shown in the above embodiment, the embodiment of the present disclosure provides a process flow for manufacturing a magnetic memory, and the specific steps are as follows: Figure 1 Figure 3

[0086] Figure 4 ​​​As shown, in the embodiment of the present disclosure, the non-collinear antiferromagnetic material includes manganese Mn x and Y, X≥3; wherein, the Y includes but is not limited to any one of the following: gallium Ga, germanium Ge, iridium Ir, rhodium Rh, tin Sn, platinum Pt; the step of forming the antiferromagnetic layer, i.e., S201 above, can specifically include:

[0087] The non-collinear antiferromagnetic material Mn x Y is sputtered by a sputtering process.

[0088] The non-collinear antiferromagnetic material Mn x Y is etched to form the antiferromagnetic layer with a film thickness between 1 nm and 100 nm.

[0089] It should be understood that, in this embodiment, the non-collinear antiferromagnetic material Mn x Y can exhibit better antiferromagnetism at a thicker thickness, so in the process of preparing the magnetic storage device as shown Figure 4 , selecting a thicker non-collinear antiferromagnetic material (e.g., 50-100 nm) can leave a larger etching window, and over-etching has less impact on device performance, and the process is less difficult compared to SOT-MRAM.

[0090] In the embodiment of the present disclosure, the method further includes: forming an insertion layer 130 on the antiferromagnetic layer, the insertion layer 130 being located between the free layer 121 and the antiferromagnetic layer 110.

[0091] In the embodiment of the present disclosure, the material of the insertion layer is an insulating material; the step of forming the insertion layer on the antiferromagnetic layer can be specifically implemented by the following step (a) or step (b):

[0092] Step (a) sputters an insulating material on the antiferromagnetic layer by a sputtering process to form an insertion layer with a film thickness between 0.1 nm and 3 nm.

[0093] Step (b) sputters an insulating material on the antiferromagnetic layer by a sputtering process, and etches the insulating material based on the free layer to form an insertion layer with a film thickness between 0.1 nm and 3 nm.

[0094] Exemplarily, the insulating material can be aluminum oxide AlO x , magnesium oxide MgO, or other possible materials.

[0095] It should be understood that in this embodiment, by setting the insertion layer of thin insulating material, the shunt of the write current can be prevented, more current flows into the antiferromagnetic layer, the SOT effect inside the antiferromagnetic layer is enhanced, and the antiferromagnetic layer is prevented from diffusing material elements to the free layer without external magnetic field assistance.

[0096] In an implementation manner of the embodiment of the present disclosure, in the case that the magnetic memory further includes an insertion layer formed on the antiferromagnetic layer, the etching stop layer of the magnetic tunnel junction including the free layer, the tunnel barrier layer and the reference layer is different, as shown in Figure 5 The preparation process flow of the magnetic tunnel junction in the magnetic memory provided by the embodiment of the present disclosure is shown, which can include the following two manufacturing methods:

[0097] The first method is shown in

[0098] In combination with Figure 5 , first, the magnetic tunnel junction film stack 120 is sputtered, and the film stack structure is shown in Figure 1 After sputtering, the magnetic tunnel junction (MTJ) region is patterned, and then the film is etched to form a tunnel junction structure. Since the in-plane anisotropic magnetic memory device is not limited by shape, the device shape can be circular. As shown in Figure 6 (a) of the magnetic tunnel junction (MTJ) etching end point detection element is the element of the insertion layer 130, such as Al, Mg, etc., so that the etching is stopped at the insertion layer 130. Subsequently, the standard MTJ post-process is relied on, including bottom electrode patterning and etching, MTJ top hole opening, and overall device metal layer patterning and metal interconnection process, to complete the preparation of the MTJ. The device structure is shown in Figure 6 (a). When the device is working, the current is directly passed into the antiferromagnetic layer 110, and the SOT effect of Mn x Y drives the magnetic moment of the antiferromagnetic layer 110 to flip, changes the exchange bias direction of the antiferromagnetic layer 110 / free layer 121 interface, and then flips the magnetic moment of the free layer 121, completes the writing of the device from "0" to "1", and at the same time, a small read current can be applied through the top and bottom electrode interconnection to read the device storage information. This method can further prevent the problem of device short circuit caused by the redeposition phenomenon commonly occurring in the MTJ etching process.

[0099] The second method is shown in

[0100] In combination with Figure 5 , first, the magnetic tunnel junction 120 film stack is sputtered, and the film stack structure is shown in Figure 1 After sputtering, the magnetic tunnel junction region is patterned, and then the MTJ film is etched to form a tunnel junction structure. Since the in-plane anisotropic magnetic memory device is not limited by shape, the device shape can be circular. As shown in Figure 6As shown in (b) of FIG. 1, the end-point detection element of MTJ etching is an element of the anti-ferromagnetic layer 110, such as Mn, Sn, etc., so as to stop etching at the anti-ferromagnetic layer, and then the standard MTJ post-process is relied on, including bottom electrode patterning and etching, MTJ top hole opening, and overall device metal layer patterning and metal interconnection process, to complete MTJ preparation. The device structure is as shown in (c) of FIG. 1. Figure 6 As shown in (b) of FIG. 1, when the device works, the current is directly passed into the anti-ferromagnetic layer 110, and the magnetic moment of the anti-ferromagnetic layer 110 is flipped by using Mn x The SOT effect of Y drives the magnetic moment of the anti-ferromagnetic layer 110 to flip, changes the exchange bias direction of the anti-ferromagnetic layer 110 / free layer 121 interface, and then flips the magnetic moment of the free layer 121, to complete the writing of the device from "0" to "1". Meanwhile, a smaller read current can be applied through the top and bottom electrode interconnection to read the storage information of the device. The MTJ etching stop layer is selected in the relatively thick anti-ferromagnetic layer, which can improve the etching window and greatly reduce the difficulty of preparation of the magnetic storage device.

[0101] It should be noted that, for the first method, when the reference layer, the tunnel barrier layer and the free layer are etched from top to bottom in sequence and stopped at the insertion layer, that is, the insulating material is not etched as in the above step (a), at this time, the insertion layer can cover the anti-ferromagnetic layer, which can further reduce the shunt of the write current and also prevent the short circuit phenomenon of the sidewall of the device; for the second method, when the reference layer, the tunnel barrier layer, the free layer and the insertion layer are etched from top to bottom in sequence and stopped at the anti-ferromagnetic layer, that is, the insulating material is etched as in the above step (b), at this time, the insertion layer cannot cover the anti-ferromagnetic layer, but because the MTJ etching stop layer is selected in the relatively thick anti-ferromagnetic layer, the etching window can be improved and the difficulty of preparation of the magnetic storage device can be greatly reduced.

[0102] In the implementation manner of the embodiment of the present disclosure, the method further includes:

[0103] The cover layer 140 is formed on the side of the reference layer 123 away from the tunnel barrier layer 122.

[0104] In this embodiment, by setting the cover layer as protection or buffer, the over-etching phenomenon can be prevented during the magnetic tunnel junction top hole etching.

[0105] It should be noted that, compared with the anti-ferromagnetic layer of the in-plane anisotropic magnetic storage device in the related art which uses IrMn, PtMn and other collinear anti-ferromagnetic materials, the anti-ferromagnetic layer in the magnetic storage device provided in the embodiment of the present disclosure uses Mn xY Such non-collinear antiferromagnetic material, when a current is passed through the antiferromagnetic layer, can flip the magnetic moment of the free layer by means of its internal SOT effect, instead of mainly relying on the heat effect brought by the current, so it does not need too high write current, and the current write order is consistent with the spin orbit torque magnetic memory chip (Spin Orbit Torque MRAM, SOT-MRAM).

[0106] In addition, the in-plane anisotropy magnetic storage device in the related art is to pass a current through the heavy metal track layer in the in-plane anisotropy magnetic storage device to indirectly flip the antiferromagnetic layer, while the magnetic storage device provided in the embodiment of the present disclosure is to directly write a current into the antiferromagnetic layer in the magnetic storage device, thereby improving the conversion efficiency of charge to spin current.

[0107] The embodiment of the present disclosure provides a manufacturing method of a magnetic storage device, which can use the non-collinear antiferromagnetic material Mn x Y to prepare the antiferromagnetic layer and flip the magnetic moment by means of the internal spin orbit torque effect, thereby greatly reducing the write current and further reducing the power consumption of the magnetic storage device, and the magnetic storage device is easier to drive;

[0108] Further, the thickness of the non-collinear antiferromagnetic material of the antiferromagnetic layer can be varied in a relatively large range, thereby increasing the etching window and reducing the process difficulty.

[0109] The above description is only the preferred embodiment of the present disclosure and the explanation of the applied technical principles. It should be understood by those skilled in the art that the scope of the application involved in the present disclosure is not limited to the technical solutions formed by the specific combination of the above technical features, and should also cover other technical solutions formed by any combination of the above technical features or their equivalent features without departing from the inventive concept. For example, the above features are replaced with the technical features disclosed in the present disclosure (but not limited to) having similar functions to form a technical solution.

Claims

1. A magnetic storage device, characterized in that, The magnetic storage device includes at least: An antiferromagnetic layer, wherein the antiferromagnetic layer is made of a non-collinear antiferromagnetic material; The non-collinear antiferromagnetic material includes manganese (Mn). x And Y, X>3; wherein, Y includes any one of the following: gallium Ga, germanium Ge, iridium Ir, rhodium Rh, tin Sn, platinum Pt; A magnetic tunnel junction is disposed on the antiferromagnetic layer, and the magnetic tunnel junction comprises, from bottom to top, a free layer, a tunneling barrier layer and a reference layer. When an electric current is passed through the antiferromagnetic layer, the spin-orbit moment effect of the antiferromagnetic layer changes the direction of the exchange bias field formed between the antiferromagnetic layer and the free layer, thereby reversing the magnetic moment direction of the free layer. The magnetic storage device has in-plane anisotropy.

2. The magnetic storage device according to claim 1, characterized in that, The thickness of the antiferromagnetic layer is between 1 nm and 100 nm.

3. The magnetic storage device according to claim 1, characterized in that, The magnetic storage device further includes: An insertion layer is disposed between the free layer and the antiferromagnetic layer. The material of the insertion layer is an insulating material, and the film thickness of the insertion layer is between 0.1 nm and 3 nm.

4. The magnetic storage device according to any one of claims 1 to 3, characterized in that, The magnetic storage device further includes: A capping layer is disposed on the side of the reference layer opposite to the tunneling barrier layer.

5. A method for manufacturing a magnetic storage device, characterized in that, The method includes: An antiferromagnetic layer is formed, wherein the material of the antiferromagnetic layer is a non-collinear antiferromagnetic material; The non-collinear antiferromagnetic material includes manganese (Mn). x And Y, X>3; wherein, Y includes any one of the following: gallium Ga, germanium Ge, iridium Ir, rhodium Rh, tin Sn, platinum Pt; A free layer, a tunneling barrier layer, and a reference layer are formed sequentially from bottom to top on the antiferromagnetic layer. When an electric current is passed through the antiferromagnetic layer, the spin-orbit moment effect of the antiferromagnetic layer changes the direction of the exchange bias field formed between the antiferromagnetic layer and the free layer, thereby reversing the magnetic moment direction of the free layer. The magnetic storage device has in-plane anisotropy.

6. The manufacturing method according to claim 5, characterized in that, The formation of the antiferromagnetic layer includes: The non-collinear antiferromagnetic material Mn was sputtered using a sputtering process. x Y; For the non-collinear antiferromagnetic material Mn x Y is etched to form the antiferromagnetic layer with a film thickness between 1 nm and 100 nm.

7. The manufacturing method according to claim 5, characterized in that, The method further includes: An insertion layer is formed on the antiferromagnetic layer, the insertion layer being located between the free layer and the antiferromagnetic layer.

8. The manufacturing method according to claim 7, characterized in that, The material of the insertion layer is an insulating material; The process of forming an insertion layer on the antiferromagnetic layer includes: An insulating material is sputtered onto the antiferromagnetic layer using a sputtering process to form an insertion layer with a film thickness between 0.1 nm and 3 nm.

9. The manufacturing method according to claim 7, characterized in that, The material of the insertion layer is an insulating material; The process of forming an insertion layer on the antiferromagnetic layer includes: An insulating material is sputtered onto the antiferromagnetic layer using a sputtering process, and the insulating material is etched based on the free layer to form an insertion layer with a film thickness between 0.1 nm and 3 nm.

10. The manufacturing method according to claim 6, characterized in that, The method further includes: A capping layer is formed on the side of the reference layer opposite to the tunneling barrier layer.

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