Spectral filter, image sensor including spectral filter, and electronic device

Abstract

A spectral filter is provided, as well as an image sensor and electronic device including the spectral filter. The spectral filter includes: a first metallic reflective layer; a second metallic reflective layer disposed above the first metallic reflective layer; a plurality of cavities disposed between the first metallic reflective layer and the second metallic reflective layer, the plurality of cavities including first patterns corresponding to different center wavelengths; and a plurality of lower patterned films disposed below the first metallic reflective layer, the plurality of lower patterned films including second patterns corresponding to different center wavelengths.

Description

[0001] Cross-reference to related applications

[0002] This application is based on and claims priority to Korean Patent Application No. 10-2021-0130289 filed with the Korean Intellectual Property Office on September 30, 2021, and Korean Patent Application No. 10-2022-0045809 filed with the Korean Intellectual Property Office on April 13, 2022, the entire disclosure of which is incorporated herein by reference. Technical Field

[0003] This disclosure relates to a spectral filter and an image sensor and electronic device including the spectral filter. Background Technology

[0004] In related technologies, image sensors divide the wavelength band into only three parts: red (R), green (G), and blue (B). To improve the accuracy of color reproduction and the performance of object recognition, it is necessary to develop image sensors that include spectral filters that divide the wavelength band into more than three parts. However, spectral filters in related technologies are used in dedicated cameras that include large and complex optical components, and technologies for integrating spectral filters with semiconductor chips into image sensor modules are still under research and development. Summary of the Invention

[0005] Example embodiments of this disclosure provide a spectral filter, as well as an image sensor and electronic device including the spectral filter.

[0006] Additional aspects will be set forth in part in the description which follows, and will also be apparent in part from the description, or may be learned by practicing the embodiments presented in this disclosure.

[0007] According to one aspect of an example embodiment, a spectral filter includes: a first metal reflective layer; a second metal reflective layer disposed above the first metal reflective layer; a plurality of cavities disposed between the first metal reflective layer and the second metal reflective layer, the plurality of cavities including first patterns corresponding to different center wavelengths; and a plurality of lower patterned films disposed below the first metal reflective layer, the plurality of lower patterned films including second patterns respectively corresponding to different center wavelengths.

[0008] Multiple cavities can have the same thickness, and multiple patterned films can have the same thickness.

[0009] Each of the plurality of cavities may have a thickness from about 50 nm to about 400 nm. Each of the plurality of underpatterned films may have a thickness from about 100 nm to about 1,000 nm.

[0010] The spectral filter may also include a spacer disposed between at least one of the plurality of cavities and a second metallic reflective layer, the spacer comprising a dielectric material.

[0011] The spacers can have a thickness ranging from about 20 nm to about 300 nm.

[0012] The planarization layer can be placed on a second metallic reflective layer on which no spacers are placed.

[0013] Each of the plurality of cavities may include: a first dielectric material; and a second dielectric material having a refractive index different from that of the first dielectric material, the first dielectric material and the second dielectric material forming a first pattern. Each of the plurality of cavities may also include an etch stop layer.

[0014] Each of the plurality of underpatterned films may include: a third dielectric material; and a fourth dielectric material having a refractive index different from that of the third dielectric material, the third dielectric material and the fourth dielectric material forming a second pattern. Each of the plurality of underpatterned films may also include an etch stop layer.

[0015] The first and second metal reflective layers may contain the same metal material.

[0016] The first and second metal reflective layers may each comprise Al, Ag, Au, Cu, Ti, W, or TiN. At least one of the first and second metal reflective layers may further comprise polycrystalline silicon.

[0017] The first and second metal reflective layers can have a thickness from about 10 nm to about 80 nm.

[0018] The spectral filter may also include multiple upper films disposed on the second metal reflective layer, the multiple upper films having different thicknesses corresponding to different center wavelengths.

[0019] The spectral filter may also include a plurality of patterned films disposed on a second metal reflective layer, the plurality of patterned films including third patterns corresponding to different center wavelengths.

[0020] Each of the patterned films can have a thickness ranging from about 100 nm to about 1,000 nm.

[0021] Each of the upper patterned films may include: a fifth dielectric material; and a sixth dielectric material having a refractive index different from that of the fifth dielectric material, the fifth dielectric material and the sixth dielectric material forming a third pattern. Each of the upper patterned films may also include an etch stop layer.

[0022] The spectral filter may also include multiple microlenses or multiple nanopatterns disposed on the second metal reflective layer.

[0023] The spectral filter may also include an additional filter disposed on the second metal reflective layer and that transmits only light in a specific wavelength band.

[0024] Additional filters may include color filters or broadband filters.

[0025] A short-wavelength absorption filter can be disposed in a portion of the second metal reflective layer, and a long-wavelength cutoff filter can be disposed in another portion of the second metal reflective layer.

[0026] According to one aspect of another embodiment, an image sensor includes:

[0027] A pixel array, comprising multiple pixels;

[0028] And spectral filters, set in the pixel array,

[0029] The spectral filters include:

[0030] First metallic reflective layer;

[0031] A second metallic reflective layer is disposed above the first metallic reflective layer;

[0032] Multiple cavities are disposed between a first metallic reflective layer and a second metallic reflective layer, the multiple cavities including first patterns corresponding to different center wavelengths; and

[0033] Multiple patterned films are disposed between a first metal reflective layer and a pixel array, and the multiple patterned films include second patterns corresponding to different center wavelengths.

[0034] The pixel array may include multiple pixels, and each of the multiple pixels may include a wiring layer in which driving circuitry is disposed and a photodiode disposed in the wiring layer.

[0035] Multiple cavities can have the same thickness, and multiple patterned films can have the same thickness.

[0036] Each of the plurality of cavities may have a thickness from about 50 nm to about 400 nm, and each of the plurality of underpatterned films may have a thickness from about 100 nm to about 1,000 nm.

[0037] The spectral filter may also include a spacer disposed between at least one of the plurality of cavities and a second metallic reflective layer, the spacer comprising a dielectric material.

[0038] The spacers can have a thickness ranging from about 20 nm to about 300 nm.

[0039] The first and second metal reflective layers may contain the same metal material.

[0040] The spectral filter may also include multiple upper films disposed on the second metal reflective layer, the multiple upper films having different thicknesses corresponding to different center wavelengths.

[0041] The spectral filter may also include a plurality of patterned films disposed on a second metal reflective layer, the plurality of patterned films including third patterns corresponding to different center wavelengths.

[0042] The spectral filter may also include multiple microlenses or multiple nanopatterns disposed on the second metal reflective layer.

[0043] The spectral filter may also include an additional filter disposed on the second metal reflective layer and that transmits only light in a specific wavelength band.

[0044] Image sensors may also include a timing controller, a line decoder, and output circuitry.

[0045] According to one aspect of an example embodiment, an electronic device includes an image sensor. The image sensor includes: a pixel array including a plurality of pixels; and a spectral filter disposed in the pixel array. The spectral filter includes: a first metallic reflective layer; a second metallic reflective layer disposed above the first metallic reflective layer; a plurality of cavities disposed between the first and second metallic reflective layers, the plurality of cavities including first patterns respectively corresponding to different center wavelengths; and a plurality of lower patterned films disposed between the first metallic reflective layer and the pixel array, the plurality of lower patterned films including second patterns corresponding to different center wavelengths.

[0046] Electronic devices may include mobile phones, smartphones, tablet computers, smart tablet computers, digital cameras, camcorders, laptop computers, televisions, smart TVs, smart refrigerators, security cameras, robots, or medical cameras. Attached Figure Description

[0047] The above and other aspects, features, and advantages of some embodiments of this disclosure will become clearer from the following description taken in conjunction with the accompanying drawings, in which:

[0048] Figure 1 This is a schematic cross-sectional view of an image sensor according to an example embodiment;

[0049] Figure 2 This is a schematic cross-sectional view of a spectral filter according to an embodiment;

[0050] Figure 3A It shows the applicable Figure 2An example of the first pattern for each cavity shown;

[0051] Figure 3B It shows the applicable Figure 2 Another example of the first pattern for each cavity shown;

[0052] Figure 4 It is a spectral filter according to another example embodiment;

[0053] Figure 5 It is a spectral filter according to another example embodiment;

[0054] Figure 6 It shows the application to Figure 5 An example of a spectral filter consisting of sixteen unit filters arranged in a 4×4 array;

[0055] Figure 7A It shows Figure 6 The transmission spectra of the first to eighth unit filters shown in the figure;

[0056] Figure 7B It shows Figure 6 The transmission spectra of the ninth to sixteenth unit filters shown in the figure;

[0057] Figure 8 It shows Figure 6 The transmission spectra of the first unit filter to the sixteenth unit filter shown in the figure;

[0058] Figure 9 A spectral filter according to another example embodiment is shown;

[0059] Figure 10 A spectral filter according to another example embodiment is shown;

[0060] Figure 11 A spectral filter according to another example embodiment is shown;

[0061] Figure 12 A spectral filter according to another example embodiment is shown;

[0062] Figure 13 A spectral filter according to another example embodiment is shown;

[0063] Figure 14 It is available for use according to the embodiments. Figure 13 A schematic cross-sectional view of a broadband filter with an additional filter;

[0064] Figure 15 It is available as a method according to another embodiment. Figure 13 A schematic cross-sectional view of a broadband filter with an additional filter;

[0065] Figure 16 This is a cross-sectional view of a spectral filter according to another embodiment;

[0066] Figure 17 This is a block diagram of an image sensor according to an example embodiment;

[0067] Figure 18 It is applicable Figure 17 A top view of an example of a spectral filter for an image sensor;

[0068] Figure 19 It is applicable Figure 17 A top view of another example of a spectral filter for an image sensor;

[0069] Figure 20 It is applicable Figure 17 A top view of another example of a spectral filter for an image sensor;

[0070] Figure 21 This is a schematic block diagram of an electronic device including an image sensor according to an example embodiment;

[0071] Figure 22 yes Figure 21 A schematic block diagram of the camera module shown; and

[0072] Figures 23 to 24 These are schematic diagrams illustrating various examples of electronic devices that utilize an image sensor according to an example embodiment. Specific Implementation

[0073] Referring now to the embodiments, examples of which are illustrated in the accompanying drawings, wherein similar reference numerals throughout the drawings denote similar elements. In this respect, the presented embodiments may take different forms and should not be construed as limited to the description set forth herein. Therefore, the embodiments are described below only with reference to the accompanying drawings to explain various aspects. The term “and / or” as used herein includes any and all combinations of one or more of the associated listed items. Expressions such as “at least one of…” modify the entire list of elements when following it, rather than individual elements within the list.

[0074] In the accompanying drawings, the dimensions of each constituent element shown may be exaggerated for ease of explanation and clarity. In the following description, while certain embodiments will be described, these are merely examples, and those skilled in the art to which this disclosure pertains will understand that various modifications and changes can be made without departing from the spirit and scope of this disclosure.

[0075] When a component is arranged "above" or "on top of" another component, the component may include not only components that are in direct contact with the other component above / below / left / right, but also components that are disposed above / below / left / right of the other component in a non-contact manner. Unless the context clearly indicates otherwise, the singular forms "a," "an," and "described" as used herein are intended to also include the plural forms. It should also be understood that the terms "comprising" and / or "including" as used herein indicate the presence of the stated features or components, but do not exclude the presence or addition of one or more other features or components.

[0076] In the context of describing this disclosure, the terms “a,” “an,” and “the,” and similar pronouns, should be interpreted to cover both singular and plural cases. Furthermore, the steps of all the methods described herein may be performed in any suitable order unless otherwise indicated herein or explicitly stated otherwise by the context. This disclosure is not limited to the order of the described steps.

[0077] Furthermore, terms such as “section,” “unit,” “module,” and “block” used in the specification may refer to a unit for performing at least one function or operation, and the unit may be implemented by hardware, software, or a combination of hardware and software.

[0078] Furthermore, the connecting lines or connectors shown in the accompanying drawings are intended to indicate the functional relationships and / or physical or logical connections between the elements.

[0079] Any and all examples or language (such as "such as") provided herein are intended only to better illustrate this disclosure and do not limit the scope of this disclosure unless otherwise required.

[0080] Figure 1 This is a schematic cross-sectional view of an image sensor 1000 according to an example embodiment. Figure 1 The image sensor 1000 shown may include, for example, a complementary metal-oxide-semiconductor (CMOS) image sensor or a charge-coupled device (CCD) image sensor.

[0081] refer to Figure 1 The image sensor 1000 may include a pixel array 65 and a resonator structure 80 disposed above the pixel array 65. Here, the pixel array 65 may include a plurality of pixels arranged in a two-dimensional manner, and the resonator structure 80 may include a plurality of resonators configured to correspond to the plurality of pixels. Figure 1 An example is shown where pixel array 65 includes four pixels and resonator structure 80 includes four resonators.

[0082] Each pixel in the pixel array 65 may include a photodiode 62 as a photoelectric conversion element and a driving circuit 52 configured to drive the photodiode 62. The photodiode 62 may be embedded in a semiconductor substrate 61 having two surfaces 61a, 61b facing each other. For example, a silicon substrate may be used as the semiconductor substrate 61. However, this embodiment is not limited to this. A wiring layer 51 may be disposed above or below the semiconductor substrate 61, and, for example, a driving circuit 52 such as a metal-oxide-semiconductor field-effect transistor (MOSFET) may be disposed in the wiring layer 51.

[0083] A resonator structure 80, comprising multiple resonators, is disposed above a semiconductor substrate 61. The resonators can be configured to transmit light within a desired specific wavelength range, respectively. The multiple resonators may include: a first reflective layer 81 and a second reflective layer 82 disposed separately from each other, and cavities 83a, 83b, 83c, and 83d disposed between the first reflective layer 81 and the second reflective layer 82. Each of the first reflective layer 81 and the second reflective layer 82 may include, for example, a metallic reflective layer or a Bragg reflective layer. Each of the cavities 83a, 83b, 83c, and 83d can be configured to resonate light within a desired specific wavelength range.

[0084] A first functional layer 71 may be disposed between the top surface of the semiconductor substrate 61 and the resonator structure 80. The first functional layer 71 may be configured, for example, to increase the transmittance of light transmitted through the resonator structure 80 and incident on the photodiode 62. For this purpose, the first functional layer 71 may have a dielectric layer or a dielectric pattern with adjusted transmittance.

[0085] A second functional layer 72 may be disposed above the resonator structure 80. The second functional layer 72 may be configured, for example, to increase the transmittance of light incident on the resonator structure 80. For this purpose, the second functional layer 72 may include a dielectric layer or a dielectric pattern with adjusted transmittance. A third functional layer 90 may also be disposed above the second functional layer 72. The third functional layer 90 may include, for example, an anti-reflective layer, a condenser lens, a color filter, a short-wavelength absorption filter, a long-wavelength absorption filter, etc. However, this is merely an example.

[0086] At least one of the first functional layer 71, the second functional layer 72, and the third functional layer 90 described above can be used together with the resonator structure 80 to form a spectral filter, which will be described later. The spectral filter according to an example embodiment will be described in detail below.

[0087] The following description details the spectral filter 1100 of the image sensor 1000. Figure 2 This is a cross-sectional view of a spectral filter 1100 according to an example embodiment.

[0088] refer to Figure 1 and Figure 2 The spectral filter 1100 may include a plurality of unit filters (e.g., a first unit filter 111, a second unit filter 112, a third unit filter 113, and a fourth unit filter 114) arranged in two dimensions on a plan view of the spectral filter 1100. A pixel array 4100, including a plurality of pixels (e.g., a first pixel 101, a second pixel 102, a third pixel 103, and a fourth pixel 104) corresponding to the plurality of unit filters 111, 112, 113, and 114 respectively, may be disposed above or below the spectral filter 1100. Figure 2 Examples of first unit filters 111 to fourth unit filters 114 and first pixels 101 to fourth pixels 104 are shown. The first unit filters 111 to fourth unit filters 114 may each have a different center wavelength.

[0089] The spectral filter 1100 may include a resonant layer 120, which includes a plurality of resonators. The resonant layer 120 may include a first metal reflective layer 127 and a second metal reflective layer 128 disposed separately from each other, and a plurality of cavities (e.g., a first cavity 121, a second cavity 122, a third cavity 123, and a fourth cavity 124) disposed between the first metal reflective layer 127 and the second metal reflective layer 128. The first metal reflective layer 127 and the second metal reflective layer 128 may each include a lower metal reflective layer and an upper metal reflective layer, respectively. Figure 2 Examples of the first resonator to the fourth resonator and the first cavity 121 to the fourth cavity 124 are shown.

[0090] The first resonator may include a first metal reflective layer 127, a second metal reflective layer 128, and a first cavity 121 disposed between the first metal reflective layer 127 and the second metal reflective layer 128; and the second resonator may include the first metal reflective layer 127, the second metal reflective layer 128, and a second cavity 122 disposed between the first metal reflective layer 127 and the second metal reflective layer 128. The third resonator may include the first metal reflective layer 127, the second metal reflective layer 128, and a third cavity 123 disposed between the first metal reflective layer 127 and the second metal reflective layer 128; and the fourth resonator may include the first metal reflective layer 127, the second metal reflective layer 128, and a fourth cavity 124 disposed between the first metal reflective layer 127 and the second metal reflective layer 128. Here, the first to fourth resonators may each have different center wavelengths (e.g., a first center wavelength to a fourth center wavelength).

[0091] Each of the resonators can have a Fabry-Perot structure. When light passes through the second metal reflective layer 128 and is incident on each of the cavities 121, 122, 123, and 124, the light can oscillate between the first metal reflective layer 127 and the second metal reflective layer 128 within the cavities 121, 122, 123, and 124, during which constructive and destructive interference occur. Light with a specific center wavelength and satisfying the constructive interference conditions of each of the cavities 121 to 124 can pass through the first metal reflective layer 127 and be incident on each of the pixels 101 to 104 of the pixel array 4100.

[0092] The first metal reflective layer 127 and the second metal reflective layer 128 may each comprise a metallic material capable of reflecting light within a specific wavelength range. For example, the first metal reflective layer 127 and the second metal reflective layer 128 may each comprise aluminum (Al), silver (Ag), gold (Au), copper (Cu), titanium (T), tungsten (W), or titanium nitride (TiN). However, this is merely an example. At least one of the first metal reflective layer 127 and the second metal reflective layer 128 may also comprise polycrystalline silicon. The first metal reflective layer 127 and the second metal reflective layer 128 may comprise the same metallic material. However, the first metal reflective layer 127 and the second metal reflective layer 128 are not limited thereto and may each comprise a metallic material different from the examples described above. The first metal reflective layer 127 and the second metal reflective layer 128 may each have a thickness of about tens of nanometers. For example, the first metal reflective layer 127 and the second metal reflective layer 128 may have a thickness from about 10 nm to about 80 nm. As a specific example, each of the first metal reflective layer 127 and the second metal reflective layer 128 may have a thickness from about 10 nm to about 50 nm. However, the thickness of each of the first metal reflective layer 127 and the second metal reflective layer 128 is not limited thereto.

[0093] The first cavity 121 to the fourth cavity 124 are disposed between the first metal reflective layer 127 and the second metal reflective layer 128. Each of the first cavity 121 to the fourth cavity 124 may have a multi-mode structure having multiple center wavelengths. In this case, the center wavelength of the first-order mode of each of the first cavity 121 to the fourth cavity 124 can be used as the center wavelength of each resonator. However, the embodiment is not limited thereto, and each of the first cavity 121 to the fourth cavity 124 may have a single-mode structure having a single center wavelength.

[0094] By adjusting the effective refractive index, the first cavity 121 to the fourth cavity 124 can have different center wavelengths. Therefore, the first cavity 121 to the fourth cavity 124 can each include a different first pattern corresponding to a different center wavelength. For example, the first cavity 121 can include a first pattern corresponding to a first center wavelength, and the second cavity 122 can include a first pattern corresponding to a second center wavelength. The third cavity 123 can have a first pattern corresponding to a third center wavelength, and the fourth cavity 124 can have a first pattern corresponding to a fourth center wavelength.

[0095] Each of the first cavities 121 to the fourth cavities 124 may include a first dielectric material 125a and a second dielectric material 125b spaced apart from the first dielectric material 125a to form a first pattern. Here, the second dielectric material 125b may have a refractive index different from that of the first dielectric material 125a. Each of the first dielectric material 125a and the second dielectric material 125b may include, for example, silicon, silicon oxide, silicon nitride, titanium oxide, etc. In a specific example, the first dielectric material 125a may include silicon oxide, and the second dielectric material 125b may include titanium oxide. However, this is merely an example.

[0096] Figure 2 An example is shown where the second dielectric material 125b is connected to the first metal reflective layer 127 and the second metal reflective layer 128 via, for example, an inlay process. However, the embodiments are not limited thereto, and the second dielectric material 125b may have a mesa structure that is not connected to the second metal reflective layer 128.

[0097] Figure 3A and Figure 3B An example of a first pattern applicable to the first cavity 121 through the fourth cavity 124 is shown. (Reference) Figure 3A In the first pattern 170 according to the embodiment, a second dielectric material 170b with a refractive index greater than that of the first dielectric material 170a is arranged in a two-dimensional array within the first dielectric material 170a. Although Figure 3A The illustration shows each of the second dielectric materials 170b having a circular cross-section, but each of the second dielectric materials 170b can have a cross-section of various shapes other than circular. (See reference) Figure 3B In a first pattern 180 according to another example, a second dielectric material 180b with a refractive index less than that of the first dielectric material 180a is arranged in a two-dimensional array in the first dielectric material 180a. Figure 3B The illustration shows each of the second dielectric materials 180b having a square cross-section, and each of the second dielectric materials 180b may have a cross-section of various shapes other than square.

[0098] refer to Figure 2 The first pattern can be formed differently by changing the size and / or shape of the second dielectric material 125b arranged at intervals in the first dielectric material 125a. Therefore, multiple cavities 121 to 124 with different center wavelengths can be formed by changing the effective refractive index.

[0099] The etch stop layer 129 may also be disposed above or below the first dielectric material 125a and the second dielectric material 125b. The etch stop layer 129 further facilitates the patterning process for forming the cavities. The etch stop layer 129 may include, but is not limited to, silicon, oxide, titanium oxide, hafnium oxide, etc. The etch stop layer 129 may include a material whose etch rate is equal to or less than half (e.g., equal to or less than one-fifth) of the etch rate of the dielectric material included in the cavities 121 to 124. For example, when the cavities 121 to 124 include silicon oxide, the etch stop layer 129 may include hafnium oxide.

[0100] As described above, the first cavity 121 to the fourth cavity 124 can be formed with different first patterns corresponding to the center wavelengths between the first metal reflective layer 127 and the second metal reflective layer 128, respectively. Therefore, the first cavity 121 to the fourth cavity 124 can have the same thickness. For example, the first cavity 121 to the fourth cavity 124 can have a thickness from about 50 nm to about 400 nm. However, the embodiments are not limited thereto.

[0101] A lower dielectric layer 130 is disposed between the resonant layer 120 and the pixel array 4100. The lower dielectric layer 130 may be configured to enhance the transmittance of the first unit filter 111 to the fourth unit filter 114. The lower dielectric layer 130 may include a plurality of lower patterned films (e.g., a first lower patterned film 131, a second lower patterned film 132, a third lower patterned film 133, and a fourth lower patterned film 134) configured to correspond to different center wavelengths.

[0102] The lower dielectric layer 130 may include a first lower patterned film 131, a second lower patterned film 132, a third lower patterned film 133, and a fourth lower patterned film 134. The first lower patterned film 131, the second lower patterned film 132, the third lower patterned film 133, and the fourth lower patterned film 134 may be disposed below the first cavity 121, the second cavity 122, the third cavity 123, and the fourth cavity 124, respectively. By adjusting the effective refractive index, the first lower patterned film 131 to the fourth lower patterned film 134 can be configured to correspond to different center wavelengths.

[0103] Similar to the first cavity 121 to the fourth cavity 124 described above, the first lower patterned film 131 to the fourth lower patterned film 134 may each include different second patterns corresponding to different center wavelengths. For example, the first lower patterned film 131 may have a second pattern corresponding to a first center wavelength, and the second lower patterned film 132 may have a second pattern corresponding to a second center wavelength. The third lower patterned film 133 may have a second pattern corresponding to a third center wavelength, and the fourth lower patterned film 134 may have a second pattern corresponding to a fourth center wavelength.

[0104] The second pattern of each of the first to fourth lower patterned films 131 may have a shape similar to the shape of the first pattern of each of the first to fourth cavities 121 to 124. Each of the first to fourth lower patterned films 131 to 134 may include a third dielectric material 135a and a fourth dielectric material 135b spaced apart from the third dielectric material 135a to form the second pattern. Here, the fourth dielectric material 135b may have a refractive index different from that of the third dielectric material 135a. The third dielectric material 135a and the fourth dielectric material 135b may respectively include, for example, titanium oxide, silicon nitride, hafnium oxide, silicon oxide, high refractive index polymers, etc., but the embodiments are not limited thereto.

[0105] The second pattern can be formed differently by changing the size and / or shape of the fourth dielectric material 135b arranged at intervals in the third dielectric material 135a. Therefore, the lower pattern films 131 to 134 corresponding to different center wavelengths can be formed by changing the effective refractive index.

[0106] The etch stop layer 139 may also be disposed above or below the third dielectric material 135a and the fourth dielectric material 135b. The etch stop layer 139 further facilitates the patterning process for forming the first lower patterned film 131 to the fourth lower patterned film 134. The etch stop layer 139 may include, for example, silicon oxide, titanium oxide, hafnium oxide, etc., but is not limited thereto.

[0107] As described above, the first lower patterned film 131 to the fourth lower patterned film 134 may have different second patterns corresponding to the center wavelength. Therefore, similar to the first cavity 121 to the fourth cavity 124 described above, the first lower patterned film 131 to the fourth lower patterned film 134 may be formed to have the same thickness. For example, the first lower patterned film 131 to the fourth lower patterned film 134 may have a thickness from about 100 nm to about 1,000 nm. However, the embodiments are not limited to this.

[0108] An upper dielectric layer 140 is disposed on the resonant layer 120. The upper dielectric layer 140 may be configured to improve the transmittance of the unit filter. The upper dielectric layer 140 may include a plurality of upper films (e.g., a first upper film 141, a second upper film 142, a third upper film 143, and a fourth upper film 144) respectively configured to correspond to different center wavelengths.

[0109] The upper dielectric layer 140 may include a first upper film 141, a second upper film 142, a third upper film 143, and a fourth upper film 144. The first upper film 141, the second upper film 142, the third upper film 143, and the fourth upper film 144 may be disposed above the first cavity 121, the second cavity 122, the third cavity 123, and the fourth cavity 124, respectively.

[0110] The first upper film 141 to the fourth upper film 144 can each correspond to a different center wavelength. Therefore, the first upper film 141 to the fourth upper film 144 can be formed with different thicknesses to correspond to the center wavelength. Each of the first upper film 141 to the fourth upper film 144 can have a thickness, for example, from about 10 nm to about 20,000 nm, but the embodiments are not limited thereto. The first upper film 141 to the fourth upper film 144 can each comprise, for example, titanium oxide, silicon nitride, hafnium oxide, silicon oxide, high refractive index polymers, etc., but these are merely examples. Furthermore, the first upper film 141 to the fourth upper film 144 can include a compound layer comprising a combination of the above materials. For example, the first upper film 141 to the fourth upper film 144 can include a compound layer comprising titanium oxide and silicon oxide.

[0111] In this embodiment, the first cavity 121 to the fourth cavity 124 and the first lower patterned film 131 to the fourth lower patterned film 134 can be formed into a periodic pattern using dielectric materials with different refractive indices, thereby manufacturing the first cavity 121 to the fourth cavity 124 and the first lower patterned film 131 to the fourth lower patterned film 134 with the same thickness. Therefore, the manufacturing process of the spectral filter 1100 can be simplified. Furthermore, the manufacturing process can be further simplified by forming the first metal reflective layer 127 and the second metal reflective layer 128 from a metallic material.

[0112] Figure 4 This is a spectral filter 1200 according to another example embodiment. In addition to the upper dielectric layer 240, Figure 4 The spectral filter 1200 shown includes... Figure 2 It has the same components as the spectral filter 1100 shown.

[0113] refer to Figure 4The spectral filter 1200 may include multiple unit filters 211, 212, 213, and 214. The spectral filter 1200 includes a resonant layer 120, a lower dielectric layer 130 disposed below the resonant layer 120, and an upper dielectric layer 240 disposed on the resonant layer 120. The upper dielectric layer 240 may include multiple upper patterned films (e.g., a first upper patterned film 241, a second upper patterned film 242, a third upper patterned film 243, and a fourth upper patterned film 244) configured to correspond to different center wavelengths.

[0114] The upper dielectric layer 240 may include a first upper patterned film 241, a second upper patterned film 242, a third upper patterned film 243, and a fourth upper patterned film 244. The first upper patterned film 241, the second upper patterned film 242, the third upper patterned film 243, and the fourth upper patterned film 244 may be disposed above the first cavity 121, the second cavity 122, the third cavity 123, and the fourth cavity 124, respectively.

[0115] By adjusting the effective refractive index, the first upper patterned film 241 to the fourth upper patterned film 244 can be configured to correspond to different center wavelengths. The first upper patterned film 241 to the fourth upper patterned film 244 may each include a different third pattern corresponding to a center wavelength. For example, the first upper patterned film 241 may have a third pattern corresponding to a first center wavelength, and the second upper patterned film 242 may have a third pattern corresponding to a second center wavelength. The third upper patterned film 243 may have a third pattern corresponding to a third center wavelength, and the fourth upper patterned film 244 may have a third pattern corresponding to a fourth wavelength pattern.

[0116] The first pattern of each of the first upper patterned films 241 to the fourth upper patterned films 244 may have a shape similar to the shape of the second pattern of each of the first lower patterned films 131 to the fourth lower patterned films 134. Each of the first upper patterned films 241 to the fourth upper patterned films 244 may include a fifth dielectric material 245a and a sixth dielectric material 245b spaced apart from the fifth dielectric material 245a to form a third pattern. Here, the sixth dielectric material 245b may have a refractive index different from that of the first dielectric material 245a. The fifth dielectric material 245a and the sixth dielectric material 245b may respectively include, for example, titanium oxide, silicon nitride, hafnium oxide, silicon oxide, high refractive index polymers, etc., but the embodiments are not limited thereto.

[0117] The second pattern can be formed differently by changing the size and / or shape of the sixth dielectric material 245b arranged at intervals in the fifth dielectric material 245a. Therefore, the first upper pattern film 241 to the fourth upper pattern film 244 can be formed by changing the effective refractive index.

[0118] The etch stop layer 249 may also be disposed above or below the fifth dielectric material 245a and the sixth dielectric material 245b. The etch stop layer 249 may include, for example, silicon oxide, titanium oxide, hafnium oxide, etc., but is not limited thereto.

[0119] As described above, the first upper patterned film 241 to the fourth upper patterned film 244 can have different third patterns corresponding to the center wavelength. Therefore, like the first cavity 121 to the fourth cavity 124 and the first lower patterned film 131 to the fourth lower patterned film 134, the first upper patterned film 241 to the fourth upper patterned film 244 can be formed to have the same thickness. For example, the first upper patterned film 241 to the fourth upper patterned film 244 can have a thickness from about 100 nm to about 1,000 nm. However, this embodiment is not limited to this.

[0120] According to the embodiments, the first upper patterned film 241 to the fourth upper patterned film 244, the first cavity 121 to the fourth cavity 124, and the first lower patterned film 131 to the fourth lower patterned film 134 can also be formed into periodic patterns using dielectric materials with different refractive indices to further simplify the manufacturing process.

[0121] Figure 5 A spectral filter 1300 according to another embodiment is shown. The differences from the embodiments described above will be described in detail below.

[0122] refer to Figure 5 The spectral filter 1300 may include multiple unit filters (e.g., a first unit filter 311, a second unit filter 312, a third unit filter 313, and a fourth unit filter 314). The spectral filter 1300 includes a resonant layer 320, a lower dielectric layer 130 disposed above or below the resonant layer 320, and an upper dielectric layer 340 disposed on the resonant layer 320. The resonant layer 320 includes a first resonator to a fourth resonator. The first resonator, second resonator, third resonator, and fourth resonator may each include a first center wavelength, a second center wavelength, a third center wavelength, and a fourth center wavelength, respectively.

[0123] The resonant layer 320 includes: a first metal reflective layer 327 and a second metal reflective layer 328 disposed separately from each other, and first to fourth cavities 321, 322, 323, and 324 disposed between the first metal reflective layer 327 and the second metal reflective layer 328. By adjusting the effective refractive index, the first to fourth cavities 321 can have different center wavelengths. For this purpose, the first to fourth cavities 321 can include different first patterns corresponding to the center wavelengths, respectively.

[0124] Each of the first cavities 321 to the fourth cavities 324 may include a first dielectric material 325a and a second dielectric material 325b spaced apart within the first dielectric material 325a to form a first pattern. An etch stop layer 329 may be disposed above or below the first dielectric material 325a and the second dielectric material 325b. The first cavities 321 to the fourth cavities 324 may have a thickness, for example, from about 50 nm to about 400 nm, but the embodiments are not limited thereto.

[0125] Each of the first cavities 321 to the fourth cavities 324 may have a multimode structure having multiple center wavelengths. Spacers 326, comprising a specific dielectric material, may be disposed in some of the cavities 321 to 324. Due to the spacers 326, the center wavelengths of the submodes output from the multimode structures of the first cavities 321 and the second cavities 322 can be used as the center wavelengths of the resonator. The spacers 326 may include, for example, silicon oxide, titanium oxide, silicon nitride, etc., but these are merely examples. The spacers 326 may have a thickness from about 20 nm to about 300 nm, but the embodiments are not limited thereto.

[0126] Figure 5 An example is shown where the spacer 326 is disposed between the first cavity 321, the second cavity 322, and the second metallic reflective layer 328. Due to the spacer 326 disposed between the first cavity 321 and the second metallic reflective layer 328, the center wavelength of the submode output from the multimode structure of the first cavity 321 can be used as the first center wavelength 321 of the first cavity. Similarly, due to the spacer 326 disposed between the second cavity 322 and the second metallic reflective layer 328, the center wavelength of the submode in the multimode structure of the second cavity 322 can be used as the second center wavelength of the second resonator.

[0127] The resonator without spacer 326 can use the center wavelength of the main mode output from the multimode structure of the third cavity 323 and the fourth cavity 324 as the center wavelength. Specifically, the center wavelength of the main mode output from the multimode structure of the third cavity 323 can be used as the third center wavelength of the third resonator. The center wavelength of the main mode output from the multimode structure of the fourth cavity 324 can be used as the fourth center wavelength of the fourth resonator.

[0128] A lower dielectric layer 130 is disposed between the resonant layer 320 and the pixel array 4100. The lower dielectric layer 130 may include a plurality of patterned films 131, 132, 133 and 134 (e.g., a first lower patterned film 131 to a fourth lower patterned film 134) configured to correspond to different center wavelengths. The first lower patterned film 131 to the fourth lower patterned film 134 may include different second patterns, each corresponding to a center wavelength.

[0129] Each of the first to fourth lower patterned films 131 may include a third dielectric material and a fourth dielectric material spaced apart from the third dielectric material to form a second pattern. An etch stop layer 139 may also be disposed beneath the first to fourth lower patterned films 131 to 134. The first to fourth lower patterned films 131 may have a thickness, for example, from about 100 nm to about 1000 nm.

[0130] The upper dielectric layer 340 is disposed on the resonant layer 320. The upper dielectric layer 340 may include a first upper patterned film 341, a second upper patterned film 342, a third upper patterned film 343, and a fourth upper patterned film 344, which are configured to correspond to different center wavelengths.

[0131] The first to fourth upper patterned films 341 may include different third patterns corresponding to the center wavelength. Each of the first to fourth upper patterned films 344 may include a fifth dielectric material and a sixth dielectric material spaced apart within the fifth dielectric to form the third pattern. An etch stop layer 349 may also be disposed beneath the first to fourth upper patterned films 341 to 344. The first to fourth upper patterned films 341 to 344 may have a thickness, for example, from about 100 nm to about 1,000 nm.

[0132] The example described above shows a plurality of upper patterned films 341 to 344 (e.g., first patterned films 341 to fourth patterned films 344) disposed on the resonant layer 320. However, a plurality of upper films (not shown) having different thicknesses corresponding to the center wavelength may be disposed on the resonant layer 320.

[0133] In this embodiment, by applying spacer 326 to the first unit filter 311 and the second unit filter 312 in the first unit filter 311 to the fourth unit filter 314, the first unit filter 311 and the second unit filter 312 can use the center wavelength in the submode output from the multimode structure of the first cavity 321 and the second cavity 322 as the first center wavelength and the second center wavelength. The third unit filter 313 and the fourth unit filter 314 can use the center wavelength in the main mode output from the multimode structure of the third cavity 323 and the fourth cavity 324 as the third center wavelength and the fourth center wavelength, respectively. By doing so, the spectral filter 1300 can efficiently achieve a wide range of center wavelengths without the need for additional filters such as color filters.

[0134] Figure 6 It shows the application to Figure 5 An example of a spectral filter 1300 with sixteen unit filters F1 to F16 arranged in a 4×4 array.

[0135] exist Figure 6 In the spectral filters shown, the spacer 326 is applied to the first to eighth unit filters F1, F2, F3, F4, F5, F6, F7, and F8, but not to the ninth to sixteenth unit filters F9, F10, F11, F12, F13, F14, F15, and F16. Therefore, the center wavelength of the submode output from the multimode structure of the cavity is used as the center wavelength of the resonators in the first to eighth unit filters F1 to F8, and the center wavelength of the main mode output from the multimode structure of the cavity is used as the center wavelength of the resonators in the ninth to sixteenth unit filters F16.

[0136] Figure 7A The transmission spectra of the first unit filter F1 through the eighth unit filter F8, with spacer 326 applied, are shown. (Reference) Figure 7A It was found that the first unit filter F1 to the eighth unit filter F8 have center wavelengths ranging from about 400 nm to about 540 nm. Figure 7B Examples of transmission spectra for the ninth unit filter F9 through the sixteenth unit filter F16 without the application of spacer 326 are shown. (Reference) Figure 7B It was found that the ninth unit filter F9 to the sixteenth unit filter F16 have center wavelengths ranging from about 560 nm to about 700 nm.

[0137] Figure 8 The transmission spectra of the first unit filter F1 to the sixteenth unit filter F16 are shown. Figure 8 The transmission spectrum shown is Figure 7A Transmission spectra and Figure 7B The combination of transmission spectra. Reference Figure 8 It was found that the first unit filter F1 to the sixteenth unit filter F16 can effectively achieve center wavelengths in the range of approximately 400 nm to approximately 700 nm.

[0138] Figure 9 A spectral filter 1400 according to another example embodiment is shown. Besides the planarization layer 450 disposed beneath the third unit filter 413 and the fourth unit filter 414, Figure 9 The spectral filter 1400 shown is... Figure 5 The spectral filter 1300 shown is the same.

[0139] refer to Figure 9The spectral filter 1400 may include multiple unit filters (e.g., a first unit filter 411, a second unit filter 412, a third unit filter 413, and a fourth unit filter 414). The spectral filter 1400 includes a resonant layer 320, a lower dielectric layer 130 disposed below the resonant layer 320, and an upper dielectric layer 440 disposed on the resonant layer 320.

[0140] As described above, the spacer 326 is disposed between the first cavity 321 and the second cavity 322 and the second metal reflective layer 328, and the spacer 326 is not disposed between the third cavity 323 and the fourth cavity 324 and the second metal reflective layer 328. Therefore, there may be a height difference between the second metal reflective layer 328 with the spacer 326 and the second metal reflective layer 328 without the spacer 326, corresponding to the thickness of the spacer 326. Due to this height difference, the layer disposed thereon may be formed unevenly.

[0141] In this embodiment, a planarization layer 450 is disposed on a second metal reflective layer 328 on which the spacers 326 are not disposed. Here, the planarization layer 450 may be configured to have a thickness corresponding to the height difference between the second metal reflective layer 328 with the spacers 326 and the second metal reflective layer 328 without the spacers 326. Therefore, the top surface of the second metal reflective layer 328 with the spacers 326 and the top surface of the planarization layer 450 may form a coplanar plane, and an upper dielectric layer 440 of a certain thickness may be formed on this coplanar plane.

[0142] The upper dielectric layer 440 may include a first upper patterned film 441, a second upper patterned film 442, a third upper patterned film 443, and a fourth upper patterned film 444, which are configured to correspond to different center wavelengths. The first upper patterned film 441 to the fourth upper patterned film 444 may include different third patterns corresponding to the center wavelength. An etch stop layer 449 may also be disposed below the first upper patterned film 441 to the fourth upper patterned film 444. The first upper patterned film 441 to the fourth upper patterned film 444 may have a thickness, for example, from about 100 nm to about 1,000 nm.

[0143] Figure 10 A spectral filter 1500 according to another example embodiment is shown.

[0144] refer to Figure 10 The spectral filter 1500 may include multiple unit filters 511, 512, 513 and 514. The spectral filter 1500 includes a resonant layer 520, a lower dielectric layer 130 disposed below the resonant layer 520, and an upper dielectric layer 440 disposed on the resonant layer 520.

[0145] The resonant layer 520 includes: a first metal reflective layer 527 and a second metal reflective layer 528 disposed separately from each other, and first to fourth cavities 521, 522, 523, and 524 disposed between the first metal reflective layer 527 and the second metal reflective layer 528. The first to fourth cavities 521 may include different first patterns corresponding to the center wavelength. An etch stop layer 529 may also be disposed in the lower portion below the first to fourth cavities 521 to 524. The first to fourth cavities 521 may have a thickness, for example, from about 50 nm to about 400 nm, but the embodiments are not limited thereto.

[0146] Each of the first cavities 521 to the fourth cavity 524 may have a multimode structure having multiple center wavelengths. A spacer 526 is disposed between the first cavities 521 to the fourth cavity 524 and the second metallic reflective layer 528. As described above, due to the spacer 526, the center wavelength of the submode output from the multimode structure of each of the first cavities 521 to the fourth cavity 524 can be used as the center wavelength of each resonator. The spacer 526 may include, for example, silicon oxide, titanium oxide, silicon nitride, etc., but these are merely examples. The spacer 526 may have a thickness of about 20 nm to about 300 nm, but is not limited thereto.

[0147] The lower dielectric layer 130 may include a plurality of patterned films (e.g., a first lower patterned film 131 to a fourth lower patterned film 134) configured to correspond to different center wavelengths. The first lower patterned film 131, the second lower patterned film 132, the third lower patterned film 133, and the fourth lower patterned film 134 may include different second patterns corresponding to the center wavelengths. An etch stop layer 139 may also be disposed below the first lower patterned films 131 to the fourth lower patterned films 134. The first lower patterned films 131 to the fourth lower patterned films 134 may have a thickness, for example, from about 100 nm to about 1,000 nm.

[0148] An upper dielectric layer 440 is disposed on the resonant layer 520. The upper dielectric layer 440 may include a first upper patterned film 441, a second upper patterned film 442, a third upper patterned film 443, and a fourth upper patterned film 444, each configured to correspond to a different center wavelength. The first upper patterned film 441 to the fourth upper patterned film 444 may include different third patterns corresponding to the center wavelength. An etch stop layer 449 may also be disposed below the lower portion of the first upper patterned film 441 to the fourth upper patterned film 444. The first upper patterned film 441 to the fourth upper patterned film 444 may have a thickness, for example, from about 100 nm to about 1,000 nm.

[0149] The example described above shows a plurality of upper patterned films (e.g., first upper patterned film 441 to fourth upper patterned film 444) disposed on the resonant layer 520. However, a plurality of upper films (not shown) having different thicknesses corresponding to the center wavelength may be disposed on the resonant layer 520.

[0150] Figure 11 A spectral filter 2100 according to another example embodiment is shown.

[0151] refer to Figure 11 The spectral filter 2100 includes: a plurality of unit filters (e.g., a first unit filter 1111, a second unit filter 1112, a third unit filter 1113, a fourth unit filter 1114, a fifth unit filter 1115, and a sixth unit filter 1116), and a microlens array 1150 disposed in the plurality of unit filters 1111 to 1116. Here, the plurality of unit filters (e.g., the first unit filters 1111 to the sixth unit filters 1116) may include the unit filters described in the embodiments.

[0152] A microlens array 1150 having multiple microlenses 1150a can be disposed on or above multiple unit filters 1111 to 1116. Each microlens 1150a can focus external light to be incident on the corresponding unit filter 1111 to 1116.

[0153] Figure 11 The illustration shows a case where microlenses 1150a are configured to have a one-to-one correspondence with unit filters 1111 to 1116. However, this is merely an example, and at least two of the unit filters 1111 to 1116 may be configured to correspond to one microlens 1150a.

[0154] Figure 12 A spectral filter 2200 according to another example embodiment is shown.

[0155] refer to Figure 12 A nanopattern array 1250, comprising multiple nanopatterns 1250a, can be disposed on multiple unit filters 1111 to 1116. Each of the nanopatterns 1250a can focus external light to be incident on its corresponding unit filter 1111 to 1116. Although Figure 12 The illustration shows a case where the nanopattern 1250a is configured to have a one-to-one correspondence with the unit filters 1111 to 1116, but at least two of the unit filters 1111 to 1116 can be configured to correspond to one nanopattern 1250a.

[0156] Figure 13 A spectral filter 2300 according to another example embodiment is shown.

[0157] refer to Figure 13 The additional filter array 2500 is disposed on a plurality of unit filters 1111 to 1116. The additional filter array 2500 may include a plurality of additional filters (e.g., a first additional filter 2501, a second additional filter 2502 and a third additional filter 2503). Figure 13 The illustration shows a first additional filter 2501 configured to correspond to the first unit filter 1111 and the second unit filter 1112, a second additional filter 2502 configured to correspond to the third unit filter 1113 and the fourth unit filter 1114, and a third additional filter 2503 configured to correspond to the fifth unit filter 1115 and the sixth unit filter 1116. However, this is merely an example, and each of the first additional filter 2501, the second additional filter 2501, and the third additional filter 2503 may be configured to correspond to one of the unit filters 1111 to 1116, or may be configured to correspond to at least three of the unit filters 1111 to 1116.

[0158] Each of the first, second, and third additional filters 2501 and 2503 can block light in an undesirable wavelength range from the corresponding unit filters 1111 to 1116. For example, when the first unit filter 1111 and the second unit filter 1112 have a center wavelength in a wavelength range from about 400 nm to about 500 nm, the first additional filter 2501 may include a blue filter that transmits blue light. Furthermore, when the third unit filter 1113 and the fourth unit filter 1114 have a center wavelength in a wavelength range from about 500 nm to about 600 nm, the second additional filter 2502 may include a green filter that transmits green light. When the fifth unit filter 1115 and the sixth unit filter 1116 have a center wavelength in a wavelength range from about 600 nm to about 700 nm, the third additional filter 2503 may include a red filter that transmits red light.

[0159] The additional filter array 2500 may include a color filter array. In this case, the first additional filter 2501, the second additional filter 2502, and the third additional filter 2503 may respectively include a blue filter, a green filter, and a red filter. For example, typical color filters used in color display devices such as liquid crystal display devices and organic light-emitting display devices may be used as blue filters, green filters, and red filters.

[0160] The additional filter array 2500 may include a broadband filter array. In this case, the first additional filter 2501, the second additional filter 2502, and the third additional filter 2503 may each include a first broadband filter, a second broadband filter, and a third broadband filter, respectively. Each of the first broadband filter, the second broadband filter, and the third broadband filter may have, for example, a multi-cavity structure or a metallic mirror structure.

[0161] Figure 14 It can be used as Figure 13 A schematic cross-sectional view of broadband filter 2510 for additional filters 2501, 2502 and 2503.

[0162] refer to Figure 14 The broadband filter 2510 may include: multiple reflective layers 2513, 2514 and 2515, and multiple cavities 2511 and 2512 disposed between the reflective layers 2513, 2514 and 2515. Although Figure 14 An example of three reflective layers 2513, 2514 and 2515 and two cavities 2511 and 2512 is shown, but the number of reflective layers 2513, 2514 and 2515 and cavities 2511 and 2512 can be varied.

[0163] Each of reflective layers 2513, 2514, and 2515 may include a distributed Bragg reflector (DBR). Each of reflective layers 2513, 2514, and 2515 may have a structure in which multiple material layers with different refractive indices are stacked alternately. Each of cavities 2511 and 2512 may include a material with a specific refractive index or two or more materials with different refractive indices.

[0164] Figure 15 It is available as a method according to another embodiment. Figure 13 A schematic cross-sectional view of broadband filter 2520 for additional filters 2501, 2502, and 2503. (See reference) Figure 15 The broadband filter 2520 may include two metal mirror layers 2522 and 2523 arranged spaced apart from each other, and a cavity 2521 disposed between the metal mirror layers 2522 and 2523.

[0165] Figure 16 This is a schematic cross-sectional view of a spectral filter 3000 according to another embodiment.

[0166] refer to Figure 16At least one short-wavelength absorption filter 1610 and at least one long-wavelength cutoff filter 1620 are disposed in a plurality of unit filters 1111 to 1116. The short-wavelength absorption filter 1610 may be disposed in some of the unit filters 1111, 1113, and 1115 among the unit filters 1111 to 1116, and the long-wavelength cutoff filter 1620 may be disposed in other unit filters 1112, 1114, and 1116 among the unit filters 1111 to 1116. Although Figure 16 The illustration shows a case in which each of the short-wavelength absorption filter 1610 and the long-wavelength cutoff filter 1620 is configured to correspond to one of the unit filters 1111 to 1116, but the disclosure is not limited thereto, and each of the short-wavelength absorption filter 1610 and the long-wavelength cutoff filter 1620 may be configured to correspond to two or more of the unit filters 1111 to 1116.

[0167] The short-wavelength absorption filter 1610 can block short-wavelength light, such as visible light. The short-wavelength absorption filter 1610 can be fabricated by depositing silicon, for example, as a material for absorbing visible light, on some of the unit filters 1111, 1113, and 1115 among the unit filters 1111 to 1116. The unit filters 1111, 1113, and 1115, on which the short-wavelength absorption filter 1610 is provided, can transmit near-infrared (NIR) light with wavelengths longer than visible light.

[0168] The long-wavelength cutoff filter 1620 can block long-wavelength light, such as NIR light. The long-wavelength cutoff filter 1620 may include an NIR light cutoff filter. The unit filters 1112, 1114 and 1116 provided with the long-wavelength cutoff filter 1620 can transmit visible light with wavelengths shorter than NIR light.

[0169] According to the embodiment, since the short-wavelength absorption filter 1610 and the long-wavelength cutoff filter 1620 are disposed in a plurality of unit filters 1111 to 1116, a spectral filter 3000 having broadband characteristics capable of achieving a range from the visible light band to the NIR band can be manufactured.

[0170] Figure 17 This is a schematic block diagram of an image sensor according to an example embodiment.

[0171] refer to Figure 17 The image sensor 1000 may include a spectral filter 9100, a pixel array 4100, a timing controller (T / C) 4010, a line decoder 4020, and an output circuit 4030. The image sensor may include a CCD image sensor or a CMOS image sensor, but is not limited thereto.

[0172] The spectral filter 9100 includes multiple unit filters that transmit light of different wavelength ranges and are arranged in a two-dimensional manner. The pixel array 4100 includes multiple pixels configured to sense light of different wavelength ranges transmitted through the multiple unit filters. Specifically, the pixel array 4100 includes pixels arranged in rows and columns. The row decoder 4020 selects one of the rows of the pixel array 4100 in response to a row address signal output from the timing controller 4010. The output circuit 4030 outputs the photosensitive signal from the column units of the pixels arranged in the selected row. For this purpose, the output circuit 4030 may include a column decoder and an analog-to-digital converter (ADC). For example, the output circuit 4030 may include multiple ADCs arranged between the column decoder and the pixel array 4100 according to the column, or a single ADC arranged at the output terminal of the column decoder. The timing controller 4010, the row decoder 4020, and the output circuit 4030 may be implemented as a single chip or separate chips. The processor configured to process the image signal output from the output circuit 4030 can be implemented as a single chip together with the timing controller 4010, the line decoder 4020, and the output circuit 4030. The pixel array 4100 includes multiple pixels that sense light in different wavelength ranges and can be arranged in various ways.

[0173] Figure 18 It is applicable Figure 17 An example of a top view of the spectral filter 9100 of the image sensor 1100.

[0174] refer to Figure 18 The spectral filter 9100 may include a plurality of filter groups 9110 arranged in two dimensions. Each of the filter groups 9110 may include 16 unit filters F1 to F16 arranged in a 4×4 array.

[0175] The first unit filter F1 and the second unit filter F2 can have center wavelengths UV1 and UV2 in the ultraviolet range, and the third unit filter F3 to the fifth unit filter F5 can have center wavelengths B1 to B3 in the blue light range. The sixth unit filter F6 to the eleventh unit filter F11 can have center wavelengths G1 to G6 in the green light range, and the twelfth unit filter F12 to the fourteenth unit filter F14 can have center wavelengths R1 to R3 in the red light range. The fifteenth unit filter F15 and the sixteenth unit filter F16 can have center wavelengths NIR1 and NIR2 in the near-infrared range.

[0176] Figure 19 It is applicable Figure 17 A plan view of another example of the spectral filter 9100 for an image sensor. For ease of illustration, Figure 19 This is a plan view of a filter group 9120.

[0177] refer to Figure 19 Each filter group 9120 may include nine unit filters F1 to F9 arranged in a 3×3 array. Here, the first unit filter F1 and the second unit filter F2 may have center wavelengths UV1 and UV2 in the ultraviolet range, and the fourth unit filter F4, the fifth unit filter F5, and the seventh unit filter F7 may have center wavelengths B1 to B3 in the blue light range. The third unit filter F3 and the sixth unit filter F6 may have center wavelengths G1 and G2 in the green light range, and the eighth unit filter F8 and the ninth unit filter F9 may have center wavelengths R1 and R2 in the red light range.

[0178] Figure 20 It is applicable Figure 17 A plan view of another example of the spectral filter 9100 of the image sensor 1000. For ease of illustration, Figure 20 This is a plan view of a 9130 filter group.

[0179] refer to Figure 20 Each filter group 9130 may include twenty-five unit filters F1 to F25 arranged in a 5×5 array. The first unit filters F1 to the third unit filters F3 may have center wavelengths UV1 to UV3, and the sixth unit filters F6, the seventh unit filters F7, the eighth unit filters F8, the eleventh unit filters F11, and the twelfth unit filters F12 may have center wavelengths B1 to B5 in the blue light range. The fourth unit filters F4, the fifth unit filters F5, and the ninth unit filters F9 may have center wavelengths G1 to G3 in the green light range, and the tenth unit filters F10, the thirteenth unit filters F13, the fourteenth unit filters F14, the fifteenth unit filters F15, the eighteenth unit filters F18, and the nineteenth unit filters F19 may have center wavelengths R1 to R6 in the red light range. The twentieth unit filter F20, the twenty-third unit filter F23, the twenty-fourth unit filter F24, and the twenty-fifth unit filter F25 can have center wavelengths NIR1 to NIR4 in the NIR range.

[0180] Image sensors 1000, including any one or more of the aforementioned spectral filters, can be used in various high-performance optical or electronic devices. Electronic devices may include, but are not limited to, smartphones, mobile phones, cellular phones, personal digital assistants (PDAs), laptops, personal computers (PCs), various portable devices, home appliances, security cameras, medical cameras, automobiles, Internet of Things (IoT) devices, and other mobile or non-mobile computing devices.

[0181] In addition to the image sensor 1000, the electronic device may also include a processor (e.g., an application processor (AP)) configured to control the image sensor, driving an operating system or application to control multiple hardware or software components, and performing various data processing and calculations. The processor may also include a graphics processing unit (GPU) and / or an image signal processor. When the processor includes an image signal processor, images (or videos) acquired by the image sensor can be stored and / or output using the processor.

[0182] Figure 21 This is a schematic block diagram of an electronic device ED01 including an image sensor 1000 according to an embodiment. Reference Figure 21 In the network environment ED00, electronic device ED01 can communicate with another electronic device ED02 via a first network ED98 (e.g., a short-range wireless communication network) or with another electronic device ED04 and / or server ED08 via a second network ED99 (e.g., a long-range wireless communication network). Electronic device ED01 can communicate with electronic device ED04 via server ED08. Electronic device ED01 may include a processor ED20, a memory ED30, an input device ED50, an audio output device ED55, a display device ED60, an audio module ED70, a sensor module ED76, an interface ED77, a haptic module ED79, a camera module ED80, a power management module ED88, a battery ED89, a communication module ED90, a user identification module ED96, and / or an antenna module ED97. In electronic device ED01, some components (e.g., display device ED60, etc.) may be omitted or other components may be added. Some of these components may be implemented by an integrated circuit. For example, the sensor module ED76 (e.g., a fingerprint sensor, an iris sensor, an illuminance sensor, etc.) can be implemented by embedding it in the display device ED60 (e.g., a display, etc.). Furthermore, when the image sensor 1000 includes spectral functionality, some functions of the sensor module (e.g., a color sensor and an illuminance sensor) can be implemented by the image sensor 1000 instead of by a separate sensor module.

[0183] Processor ED20 can control one or more other components (e.g., hardware and software components) of electronic device ED01 connected to processor ED20 by executing software (e.g., program ED40, etc.) and perform various data processing or calculations. As part of the data processing or calculation, processor ED20 can load commands and / or data received from other components (e.g., sensor module ED76, communication module ED90, etc.) into volatile memory ED32, process the commands and / or data stored in volatile memory ED32, and store the result data in non-volatile memory ED34. Processor ED20 may include a main processor ED21 (e.g., central processing unit, application processor, etc.) and an auxiliary processor ED23 (e.g., graphics processing unit, image signal processor, sensor hub processor, communication processor, etc.) that can operate independently or in conjunction with the main processor ED21. Auxiliary processor ED23 can use less power than the main processor ED21 and can perform specified functions.

[0184] The auxiliary processor ED23 can replace the main processor ED21 when the main processor ED21 is inactive (e.g., in a sleep state), or, when the main processor ED21 is active (e.g., in an application execution state), work with the processor ED21 to control the functions and / or states related to some of the constituent elements of the electronic device ED01 (e.g., display device ED60, sensor module ED76, communication module ED90, etc.). The auxiliary processor ED23 (e.g., image signal processor, communication processor, etc.) can be implemented as part of other functionally related constituent elements (e.g., camera module ED80, communication module ED90, etc.).

[0185] Memory ED30 can store various data required by the constituent elements of electronic device ED01 (e.g., processor ED20, sensor module ED76, etc.). Data may include, for example, software (e.g., program ED40, etc.) and input and / or output data regarding commands associated with it. Memory ED30 may include volatile memory ED32 and / or non-volatile memory ED34. Non-volatile memory ED34 may include internal memory ED36 fixedly installed in electronic device ED01 and removable external memory ED38.

[0186] The program ED40 can be stored as software in the memory ED30, and may include the operating system ED42, middleware ED44, and / or application ED46.

[0187] Input device ED50 can receive commands and / or data from outside electronic device ED01 (e.g., from a user) to be used by constituent elements of electronic device ED01 (e.g., processor ED20, etc.). Input device ED50 may include a microphone, mouse, keyboard, and / or digital pen (e.g., stylus, etc.).

[0188] Audio output device ED55 can output audio signals to the external device ED01. Audio output device ED44 may include a speaker and / or a handset. The speaker can be used for general purposes such as multimedia playback or recording playback, and the handset can be used to receive incoming calls. The handset can be implemented by a part coupled to the speaker or by a separate, independent device.

[0189] Display device ED60 can visually provide information to the outside of electronic device ED01. Display device ED60 may include a display, holographic device or projector, and control circuitry for controlling the corresponding device. Display device ED60 may include touch circuitry configured to detect touch and / or sensor circuitry configured to measure the intensity of the force generated by the touch (e.g., pressure sensor, etc.).

[0190] The audio module ED70 can convert sound into electrical signals or vice versa. The audio module ED70 can acquire sound via the input device ED50 in a wired or wireless manner, or output sound via a speaker and / or headphones connected to another electronic device (e.g., electronic device ED02, etc.) connected to the audio output device ED55 and / or electronic device ED01.

[0191] Sensor module ED76 can detect the operating status of electronic device ED01 (e.g., power, temperature, etc.) or external environmental status (e.g., user status, etc.) and generate electrical signals and / or data values ​​corresponding to the detected status. Sensor module ED76 may include gesture sensors, gyroscope sensors, barometric pressure sensors, magnetic sensors, accelerometers, grip sensors, proximity sensors, color sensors, infrared (IR) sensors, biosensors, temperature sensors, humidity sensors, and / or illuminance sensors.

[0192] Interface ED77 can support one or more specified protocols for electronic device ED01 that is to be connected to another electronic device (e.g., electronic device ED02, etc.) via wired or wireless means. Interface ED77 may include a High Definition Multimedia Interface (HDMI), a Universal Serial Bus (USB) interface, an SD card interface, and / or an audio interface.

[0193] The connection terminal ED78 may include a connector for physically connecting electronic device ED01 to another electronic device (e.g., electronic device ED02, etc.). The connection terminal ED78 may include an HDMI connector, a USB connector, an SD card connector, and / or an audio connector (e.g., a headphone connector, etc.).

[0194] The haptic module ED79 can convert electrical signals into mechanical stimuli (e.g., vibration, movement, etc.) or electrical stimuli that can be perceived by a user through tactile or kinematic sensation. The haptic module ED79 may include a motor, a piezoelectric device, and / or an electrical stimulation device.

[0195] The ED80 camera module can capture still images and video. The ED80 camera module may include a lens assembly with one or more lenses. Figure 1 The camera module ED80 includes an image sensor 1000, an image signal processor, and / or a flash. The lens assembly included in the camera module ED80 can collect light emitted from the object used for image capture.

[0196] The power management module ED88 manages the power supplied to the electronic device ED01. The power management module ED88 can be implemented as part of a power management integrated circuit (PMIC).

[0197] Battery ED89 can supply power to the constituent elements of electronic device ED01. Battery ED89 may include a non-rechargeable primary battery, a rechargeable secondary battery, and / or a fuel cell.

[0198] Communication module ED90 can establish wired and / or wireless communication channels between electronic device ED01 and other electronic devices (e.g., electronic device ED02, electronic device ED04, server ED08, etc.) and support communication through the established communication channels. Communication module ED90 can operate independently of processor ED20 (e.g., application processor, etc.) and may include one or more communication processors that support wired and / or wireless communication. Communication module ED90 may include wireless communication module ED92 (e.g., cellular communication module, short-range wireless communication module, Global Navigation Satellite System (GNSS) communication module, etc.) and / or wired communication module ED94 (local area network (LAN) communication module or power line communication module, etc.). The corresponding communication module among the above communication modules can communicate with another electronic device through a first network ED98 (e.g., a short-range communication network such as Bluetooth, Wi-Fi Direct, or Infrared Data Association (IrDA)) or a second network ED99 (a long-range communication network such as a cellular network, the Internet, or computer network (LAN, WAN, etc.). These various types of communication modules can be integrated into a single component (e.g., a single chip, etc.) or implemented as multiple separate components (e.g., multiple chips). The wireless communication module ED92 can verify and authenticate the electronic device ED01 within a communication network (e.g., the first network ED98 and / or the second network ED99) by using user information (e.g., International User Identifier (IMSI) etc.) stored in the user identification module ED96.

[0199] Antenna module ED97 can transmit signals and / or power to or from an external source (e.g., another electronic device). The antenna may include a transmitter formed as a conductive pattern on a substrate (e.g., a printed circuit board (PCB)). Antenna module ED97 may include one or more antennas. When antenna module ED97 includes multiple antennas, communication module ED90 can select from the multiple antennas an appropriate antenna for a communication method used in a communication network such as a first network ED98 and / or a second network ED99. Signals and / or power can be transmitted and received between communication module ED90 and another electronic device via the selected antenna. Other components besides the antenna (e.g., RFIC, etc.) may be included as part of antenna module ED97.

[0200] Some of the constituent components can be connected to each other through communication methods between peripheral devices (e.g., buses, general purpose input and output (GPIO), serial peripheral interfaces (SPI), mobile industrial processor interfaces (MIPI), etc.) and can exchange signals (e.g., commands, data, etc.) with each other.

[0201] Commands or data can be sent or received between electronic device ED01 and external electronic device ED04 via server ED08 connected to the second network ED99. Electronic devices ED02 and ED04 can be of the same or different type as electronic device ED01. All or part of the operations performed in electronic device ED01 can be performed in one or more electronic devices (e.g., ED02, ED04, and ED08). For example, when electronic device ED01 needs to perform a function or service, it can request one or more electronic devices to perform a part of the entire function or service, rather than performing the function or service itself. The one or more electronic devices receiving the request can perform additional functions or services related to the request and send the results of the execution back to electronic device ED01. Cloud computing, distributed computing, and / or client-server computing technologies can be used for this purpose.

[0202] Figure 22 yes Figure 21 A block diagram of the ED80 camera module. (Reference) Figure 22 The camera module ED80 may include a lens assembly CM10, a flash CM20, and an image sensor 1000 (e.g., Figure 17 The image sensor 1000, image stabilizer CM40, memory CM50 (e.g., buffer memory), and / or image signal processor CM60 are included. Lens assembly CM10 can collect light emitted from the object used for image capture. Camera module ED80 may include multiple lens assemblies CM10, and in this case, camera module ED80 may be a dual-camera, 360-degree camera, or spherical camera. Some lens assemblies CM10 may have the same lens properties (e.g., angle of view, focal length, autofocus, F-number, optical zoom, etc.) or different lens properties. Lens assembly CM10 may include wide-angle lenses or telephoto lenses.

[0203] The flash CM20 can emit light to enhance light emitted or reflected from an object. The flash CM20 may include one or more light-emitting diodes (e.g., red-green-blue (RGB) LEDs, white LEDs, infrared LEDs, ultraviolet LEDs, etc.) and / or a xenon lamp. The image sensor 1000 may include... Figure 1 The image sensor 1000 converts light emitted or reflected from an object and transmitted through the lens assembly CM10 into electrical signals, thereby obtaining an image corresponding to the object. The image sensor 1000 may include one or more sensors selected from image sensors with different characteristics (e.g., RGB sensors, black-and-white (BW) sensors, IR sensors, or UV sensors). Each sensor included in the image sensor 1000 may be implemented as a charge-coupled device (CCD) sensor and / or a complementary metal-oxide-semiconductor (CMOS) sensor.

[0204] The image stabilizer CM40 can move in response to movement in a specific direction of the camera module ED80 or the electronic device ED01 including the camera module ED80, one or more lenses included in the lens assembly CM10, or the image sensor 1000, or can compensate for the negative effects caused by movement by controlling the movement characteristics of the image sensor 1000 (e.g., adjusting readout timing). The image stabilizer CM40 can detect the movement of the camera module ED80 or the electronic device ED01 using a gyroscope sensor (not shown) or an accelerometer (not shown) arranged inside or outside the camera module ED80. The image stabilizer CM40 can be implemented in an optical form.

[0205] The memory CM50 can store part or all of the image data acquired by the image sensor 1000 for subsequent image processing operations. For example, when multiple images are acquired at high speed, only the low-resolution image is displayed, while the acquired raw data (e.g., data of the Bayer pattern, high-resolution data, etc.) is stored in the memory CM50. The memory CM50 can then be used to send the raw data of the selected (user-selected, etc.) image to the image signal processor CM60. The memory CM50 can be incorporated into the memory ED30 of the electronic device ED01, or configured as a separate memory that operates independently.

[0206] Image signal processor CM60 can perform image processing on images acquired by image sensor 1000 or image data stored in memory CM50. Image processing may include depth map generation, 3D modeling, panorama generation, feature point extraction, image compositing, and / or image compensation (e.g., noise reduction, resolution adjustment, brightness adjustment, blurring, sharpening, softening, etc.). Image signal processor CM60 can perform control (e.g., exposure time control or readout timing control, etc.) on components included in camera module ED80 (e.g., image sensor 1000, etc.). Images processed by image signal processor CM60 can be stored again in memory CM50 for further processing or provided to external components of camera module ED80 (e.g., memory ED30, display device ED60, electronic device ED02, electronic device ED04, server ED08, etc.). Image signal processor CM60 may be incorporated into processor ED20 or configured as a separate processor operating independently of processor ED20. When the image signal processor CM60 is configured as a separate processor from the processor ED20, the image processed by the image signal processor CM60 can undergo additional image processing by the processor ED20 and then be displayed by the display device ED60.

[0207] Electronic device ED01 may include multiple camera modules ED80 with different attributes or functions. In this case, one of the camera modules ED80 may include a wide-angle camera, and another may include a telephoto camera. Similarly, one of the camera modules ED80 may include a front-facing camera, and another may include a rear-facing camera.

[0208] The image sensor 1000 according to the embodiment can be applied to Figure 23 The mobile phone or smartphone 5100m shown in (a) Figure 23 The tablet computer or smart tablet computer 5200 shown in (b) Figure 23 The digital camera or camcorder 5300 shown in (c) Figure 23 The notebook computer 5400 shown in (d) Figure 23 The television or smart TV 5500 shown in (e) is an example. For instance, a smartphone 5100m or a smart tablet 5200 may include multiple high-resolution cameras, each with a high-resolution image sensor mounted thereon. Depth information of objects in an image can be extracted using the high-resolution cameras, the image can be adjusted for defocusing, or objects in an image can be automatically identified.

[0209] Furthermore, the image sensor 1000 can be applied to Figure 24 The smart refrigerator 5600 shown in (a) Figure 24 The security camera shown in (b) Figure 24 Robot 5800 shown in (c) Figure 24 Examples include the medical camera 5900 shown in (d). For instance, the smart refrigerator 5600 can automatically identify food in the refrigerator using an image sensor and notify the user of the presence of specific food, the type of food placed or removed, etc., via a smartphone. The security camera 5700 can provide ultra-high resolution images using high sensitivity and can identify objects or people in images in dark environments. The robot 5800 can be deployed in disaster or industrial sites where people cannot directly access it and can provide high-resolution images. The medical camera 5900 can provide high-resolution images for diagnosis or surgery, and therefore the field of view can be dynamically adjusted.

[0210] Furthermore, the image sensor 1000 can be applied to, for example... Figure 24The vehicle 6000 is shown in (e). The vehicle 6000 may include a plurality of onboard cameras 6010, 6020, 6030, and 6040 arranged in different locations. Each of the onboard cameras 6010, 6020, 6030, and 6040 may include an image sensor according to an embodiment. The vehicle 6000 can provide the driver with various information about the interior or surroundings of the vehicle 6000 by using the onboard cameras 6010, 6020, 6030, and 6040, thus enabling automatic identification of objects or people in the images and providing information necessary for autonomous driving.

[0211] According to the above example embodiments, by using dielectric materials with different refractive indices to form the cavity and the lower patterned film in a periodic pattern, the cavity and the lower patterned film can be manufactured with the same thickness, and by doing so, the manufacturing process of the spectral filter can be simplified. Furthermore, the manufacturing process can also be simplified by forming the first and second metal reflective layers from a single metallic material.

[0212] By applying spacers to some unit filters and using the center wavelength in the submode as the center wavelength of the resonator, it is possible to manufacture spectral filters that can efficiently achieve a wide range of center wavelengths without additional filters such as color filters.

[0213] It should be understood that the embodiments described herein should be considered in a descriptive sense and not for limiting purposes only. The description of features or aspects in each embodiment should generally be considered as other similar features or aspects that may be used in other embodiments. Although one or more embodiments have been described with reference to the accompanying drawings, those skilled in the art will understand that various changes in form and detail may be made without departing from the spirit and scope defined by the appended claims and their equivalents.

Claims

1. A spectral filter, comprising: First metallic reflective layer; A second metal reflective layer is disposed above the first metal reflective layer; Multiple cavities are disposed between the first metal reflective layer and the second metal reflective layer, and the multiple cavities include first patterns corresponding to different center wavelengths; as well as Multiple patterned films are disposed below the first metal reflective layer, and the multiple patterned films include second patterns respectively corresponding to the different center wavelengths. The first metal reflective layer, the second metal reflective layer, and the plurality of cavities constitute multiple resonators with a Fabry-Perot structure. The plurality of patterned films are configured to increase the transmittance of light with the different center wavelengths transmitted through the plurality of resonators.

2. The spectral filter according to claim 1, wherein, The plurality of cavities have the same thickness, and the plurality of lower patterned films have the same thickness.

3. The spectral filter according to claim 2, wherein, Each of the plurality of cavities has a thickness ranging from 50 nm to 400 nm.

4. The spectral filter according to claim 2, wherein, Each of the plurality of patterned films has a thickness ranging from 100 nm to 1,000 nm.

5. The spectral filter according to claim 1 further includes a spacer disposed between at least one of the plurality of cavities and the second metal reflective layer, the spacer comprising a dielectric material.

6. The spectral filter according to claim 5, wherein, The spacers have a thickness ranging from 20 nm to 300 nm.

7. The spectral filter according to claim 5 further includes a planarization layer disposed on a second metallic reflective layer on which the spacer is not disposed.

8. The spectral filter according to claim 1, wherein, Each of the plurality of cavities includes: a first dielectric material; and a second dielectric material having a refractive index different from that of the first dielectric material, the first dielectric material and the second dielectric material forming a first pattern.

9. The spectral filter according to claim 8, wherein, Each of the plurality of cavities also includes an etch stop layer.

10. The spectral filter according to claim 1, wherein, Each of the plurality of patterned films includes: a third dielectric material; and a fourth dielectric material having a refractive index different from that of the third dielectric material, the third dielectric material and the fourth dielectric material forming a second pattern.

11. The spectral filter according to claim 10, wherein, Each of the plurality of patterned films also includes an etch stop layer.

12. The spectral filter according to claim 1, wherein, The first metal reflective layer and the second metal reflective layer comprise the same metal material.

13. The spectral filter according to claim 12, wherein, Each of the first metal reflective layer and the second metal reflective layer includes Al, Ag, Au, Cu, Ti, W or TiN.

14. The spectral filter according to claim 12, wherein, At least one of the first metal reflective layer and the second metal reflective layer further includes polycrystalline silicon.

15. The spectral filter according to claim 1, wherein, The first metal reflective layer and the second metal reflective layer have a thickness ranging from 10 nm to 80 nm.

16. The spectral filter according to claim 1 further includes a plurality of upper films disposed on the second metal reflective layer, the plurality of upper films having different thicknesses corresponding to the different center wavelengths.

17. The spectral filter according to claim 1 further comprises a plurality of patterned films disposed on the second metal reflective layer, the plurality of patterned films comprising a third pattern corresponding to the different center wavelengths.

18. The spectral filter according to claim 17, wherein, Each of the plurality of patterned films has a thickness ranging from 100 nm to 1,000 nm.

19. The spectral filter according to claim 17, wherein, Each of the plurality of patterned films includes: a fifth dielectric material; and a sixth dielectric material having a refractive index different from that of the fifth dielectric material, the fifth dielectric material and the sixth dielectric material forming the third pattern.

20. The spectral filter according to claim 17, wherein, Each of the plurality of patterned films also includes an etch stop layer.

21. The spectral filter according to claim 1 further includes a plurality of microlenses or a plurality of nanopatterns disposed above the second metal reflective layer.

22. The spectral filter of claim 1 further includes an additional filter disposed above the second metal reflective layer and transmitting only light of a specific wavelength band.

23. The spectral filter according to claim 22, wherein, The additional filter includes a color filter or a broadband filter.

24. The spectral filter according to claim 1 further includes a short-wavelength absorption filter disposed in a portion of the second metal reflective layer and a long-wavelength cutoff filter disposed in another portion of the second metal reflective layer.

25. An image sensor, comprising: A pixel array, comprising multiple pixels; as well as Spectral filters are arranged in the pixel array. The spectral filter includes: First metallic reflective layer; A second metal reflective layer is disposed above the first metal reflective layer; Multiple cavities are disposed between the first metal reflective layer and the second metal reflective layer, and the multiple cavities include first patterns corresponding to different center wavelengths; and Multiple patterned films are disposed between the first metal reflective layer and the pixel array, and the multiple patterned films include second patterns corresponding to the different center wavelengths. The first metal reflective layer, the second metal reflective layer, and the plurality of cavities constitute multiple resonators with a Fabry-Perot structure. The plurality of patterned films are configured to increase the transmittance of light with the different center wavelengths transmitted through the plurality of resonators.

26. The image sensor according to claim 25, wherein, Each of the plurality of pixels includes a wiring layer in which a driving circuit is disposed and a photodiode disposed in the wiring layer.

27. The image sensor according to claim 25, wherein, The plurality of cavities have the same thickness, and the plurality of lower patterned films have the same thickness.

28. The image sensor according to claim 27, wherein, Each of the plurality of cavities has a thickness from 50 nm to 400 nm, and each of the plurality of lower patterned films has a thickness from 100 nm to 1,000 nm.

29. The image sensor according to claim 25, wherein, The spectral filter further includes a spacer disposed between at least one of the plurality of cavities and the second metal reflective layer, the spacer comprising a dielectric material.

30. The image sensor according to claim 29, wherein, The spacers have a thickness ranging from 20 nm to 300 nm.

31. The image sensor according to claim 25, wherein, The first metal reflective layer and the second metal reflective layer comprise the same metal material.

32. The image sensor according to claim 25, wherein, The spectral filter further includes multiple upper films disposed on the second metal reflective layer, the multiple upper films having different thicknesses corresponding to the different center wavelengths.

33. The image sensor according to claim 25, wherein, The spectral filter further includes a plurality of patterned films disposed on the second metal reflective layer, the plurality of patterned films including a third pattern corresponding to the different center wavelengths.

34. The image sensor according to claim 25, wherein, The spectral filter also includes multiple microlenses or multiple nanopatterns disposed above the second metal reflective layer.

35. The image sensor according to claim 25, wherein, The spectral filter also includes an additional filter disposed above the second metal reflective layer and transmitting only light of a specific wavelength band.

36. The image sensor according to claim 25 further includes a timing controller, a line decoder, and an output circuit.

37. An electronic device including an image sensor, wherein, The image sensor includes: A pixel array, comprising multiple pixels; and A spectral filter is arranged in the pixel array, and The spectral filter includes: First metallic reflective layer; A second metal reflective layer is disposed above the first metal reflective layer; Multiple cavities are disposed between the first metal reflective layer and the second metal reflective layer, and the multiple cavities include first patterns corresponding to different center wavelengths; and Multiple patterned films are disposed between the first metal reflective layer and the pixel array, and the multiple patterned films include second patterns corresponding to the different center wavelengths. The first metal reflective layer, the second metal reflective layer, and the plurality of cavities constitute multiple resonators with a Fabry-Perot structure. The plurality of patterned films are configured to increase the transmittance of light with the different center wavelengths transmitted through the plurality of resonators.

38. The electronic device according to claim 37, wherein, The electronic device includes at least one of the following: mobile phone, smartphone, tablet computer, smart tablet computer, digital camera, camcorder, laptop computer, television, smart TV, smart refrigerator, security camera or medical camera.

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