A method and apparatus for controlling production of epitaxial wafers

Abstract

The application provides an epitaxial wafer production control method and device. The epitaxial wafer production control method is applied to an epitaxial reaction furnace, and the epitaxial reaction furnace comprises a process chamber and a heating module located in the process chamber, and the heating module comprises multiple groups of heating units located at different positions. The method comprises the following steps: acquiring a real-time edge deformation amount of a wafer; comparing a preset wafer edge deformation amount with the real-time edge deformation amount of the wafer; when the real-time edge deformation amount of the wafer is greater than the preset wafer edge deformation amount, adjusting a total heating power of the heating module and a power ratio of different heating units until the real-time edge deformation amount of the wafer is less than or equal to the preset wafer edge deformation amount. The embodiment of the application can reduce the shape change of the wafer, thereby reducing the phenomenon of particle aggregation in the edge area of the epitaxial wafer of the wafer, and helping to improve the yield and quality of the wafer.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to a method and apparatus for controlling the production of epitaxial wafers. Background Technology

[0002] Epitaxial wafers are typically produced using chemical vapor deposition (CVD). During production, silicon source gas is injected into the surface of a single-crystal silicon wafer within a high-temperature, sealed process chamber to grow an epitaxial layer. The epitaxial wafer needs to be moved from a room-temperature transport chamber to a high-temperature process chamber. During this process, thermal stress can cause the wafer to bend and deform. If this deformation occurs, the wafer's edge areas may come into contact with the substrate or other structures supporting the wafer, leading to particle aggregation at the edges of the grown epitaxial wafer, thus affecting wafer yield and quality. Summary of the Invention

[0003] This invention provides a method and apparatus for controlling the production of epitaxial wafers, in order to solve the problem of particle aggregation in the edge region of epitaxial wafers, which affects the yield and quality of the wafers.

[0004] To solve the above problems, the present invention is implemented as follows:

[0005] In a first aspect, embodiments of the present invention provide a method for producing epitaxial wafers, applied to an epitaxial reactor, wherein the epitaxial reactor includes a process chamber and a heating module located within the process chamber, and the heating module includes multiple sets of heating units located at different positions;

[0006] The method includes the following steps:

[0007] Obtain the real-time edge deformation of the wafer;

[0008] The preset wafer edge deformation amount is compared with the real-time edge deformation amount of the wafer. When the real-time edge deformation amount of the wafer is greater than the preset wafer edge deformation amount, the total heating power of the heating module and the power ratio of different heating units are adjusted until the real-time edge deformation amount of the wafer is less than or equal to the preset wafer edge deformation amount.

[0009] In some embodiments, the process chamber includes a base for supporting the wafer;

[0010] The method of obtaining the real-time edge deformation of the wafer includes:

[0011] The height of the base and the minimum distance between the edge of the wafer and the edge of the base are detected.

[0012] The real-time edge deformation of the wafer is determined based on the height value and the minimum distance.

[0013] In some embodiments, adjusting the total heating power of the heating module and the power ratio of different heating units includes:

[0014] Obtain the trend of the height value and the range of the minimum distance;

[0015] When the height value is trending upward and the minimum distance is outside the preset distance range, the heating module is controlled to heat in the first heating mode.

[0016] When the trend of the height value is stable and the minimum distance is within the preset distance range, the heating module is controlled to heat in the second heating mode.

[0017] In the first heating mode, the heating power of the central region at the top of the wafer is greater than the heating power of the edge region at the top of the wafer, and the heating power of the central region at the bottom of the wafer is less than the heating power of the edge region at the bottom of the wafer.

[0018] In the second heating mode, the heating power of the central region at the bottom of the wafer is less than the heating power of the edge region at the bottom of the wafer.

[0019] In some embodiments, the process chamber includes a base for supporting the wafer;

[0020] The method of obtaining the real-time edge deformation of the wafer includes:

[0021] Detect the height of the base and the temperature above the wafer;

[0022] The real-time edge deformation of the wafer is determined based on the height of the base and the temperature above the wafer.

[0023] In some embodiments, adjusting the total heating power of the heating module and the power ratio of different heating units includes:

[0024] Obtain the trend of the height value and the range of temperature variation above the wafer;

[0025] When the height value is trending upward and the temperature above the wafer is outside the preset temperature range, the heating module is controlled to heat in a first heating mode.

[0026] When the trend of the height value is stable and the temperature above the wafer is within the preset temperature range, the heating module is controlled to heat in the second heating mode.

[0027] In the first heating mode, the heating power of the central region at the top of the wafer is greater than the heating power of the edge region at the top of the wafer, and the heating power of the central region at the bottom of the wafer is less than the heating power of the edge region at the bottom of the wafer.

[0028] In the second heating mode, the heating power of the central region at the bottom of the wafer is less than the heating power of the edge region at the bottom of the wafer.

[0029] In some embodiments, in the first heating mode, the total heating power of the heating module is 28 to 35 kW, and in the second heating mode, the total heating power of the heating module is 28 to 62 kW.

[0030] In some embodiments, the heating module includes a first heating unit located at the top of the process chamber and for heating the central region of the base, a second heating unit located at the top of the process chamber and for heating the edge region of the base, a third heating unit located at the bottom of the process chamber and for heating the central region of the base, and a fourth heating unit located at the bottom of the process chamber and for heating the edge region of the base.

[0031] In the first heating mode, the first power accounts for 28% to 62%, the second power accounts for 58% to 87%, and the third power accounts for 13% to 27%; and / or

[0032] In the second heating mode, the first power accounts for 28% to 62%, the second power accounts for 18% to 87%, and the third power accounts for 13% to 27%.

[0033] Wherein, the first power ratio is the ratio of the sum of the power of the second heating unit and the fourth heating unit to the total power of the heating module, the second power ratio is the ratio of the power of the first heating unit to the sum of the power of the first heating unit and the second heating unit, and the third power ratio is the ratio of the power of the third heating unit to the sum of the power of the third heating unit and the fourth heating unit.

[0034] In some embodiments, in the first heating mode, the first power accounts for 28% to 32%, the second power accounts for 75% to 80%, and the third power accounts for 20% to 27%; and / or

[0035] In the second heating mode, the first power accounts for 48% to 52%, the second power accounts for 46% to 49%, and the third power accounts for 18% to 23%.

[0036] Secondly, embodiments of the present invention provide an epitaxial wafer production apparatus applied to an epitaxial reactor, wherein the epitaxial reactor includes a process chamber and a heating module located within the process chamber, and the heating module includes multiple heating units located at different positions;

[0037] The device includes:

[0038] The acquisition module is used to acquire the real-time edge deformation of the wafer;

[0039] The control module is used to compare a preset wafer edge deformation amount with the real-time edge deformation amount of the wafer. When the real-time edge deformation amount of the wafer is greater than the preset wafer edge deformation amount, the total heating power of the heating module and the power ratio of different heating units are adjusted until the real-time edge deformation amount of the wafer is less than or equal to the preset wafer edge deformation amount.

[0040] This invention, by acquiring the real-time edge deformation of the wafer and adjusting the total heating power of the heating module and the power ratio of different heating units based on the real-time edge deformation, can adjust the temperature distribution of the wafer, thereby achieving a balanced adjustment of the influence of thermal stress on the wafer shape. This can reduce wafer shape changes and reduce particle aggregation in the epitaxial wafer edge region, which helps to improve wafer yield and quality. Attached Figure Description

[0041] To more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings used in the description of the embodiments of the present invention will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0042] Figure 1 This is a schematic diagram of the epitaxial reactor used in an embodiment of the present invention;

[0043] Figure 2 This is a schematic diagram of the wafer transfer process in an embodiment of the present invention;

[0044] Figure 3 This is a flowchart of the epitaxial wafer production control method provided in the embodiments of the present invention;

[0045] Figure 4 This is a schematic diagram of the state parameters of the epitaxial wafer production control method provided in an embodiment of the present invention;

[0046] Figure 5 This is another schematic diagram of state parameters for the epitaxial wafer production control method provided in this embodiment of the invention;

[0047] Figure 6 This is a statistical diagram of 90-nanometer-level particles in an embodiment of the present invention;

[0048] Figure 7 This is a statistical diagram of 200-nanometer-level particles in an embodiment of the present invention. Detailed Implementation

[0049] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0050] In the embodiments of this invention, the terms "first," "second," etc., are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. Furthermore, the terms "comprising" and "having," and any variations thereof, are intended to cover non-exclusive inclusion. For example, a process, method, system, product, or device that includes a series of steps or units is not necessarily limited to those steps or units explicitly listed, but may include other steps or units not explicitly listed or inherent to these processes, methods, products, or devices. Additionally, the use of "and / or" in this application indicates at least one of the connected objects, such as A and / or B and / or C, representing seven possibilities: including A alone, B alone, C alone, and the presence of both A and B, both B and C, both A and C, and the presence of A, B, and C.

[0051] This invention provides a method for controlling the production of epitaxial wafers.

[0052] In the technical solution of this embodiment, the epitaxial wafer production control method is applied to the epitaxial reaction furnace.

[0053] like Figure 1 As shown, the epitaxial reactor includes an upper quartz bell jar 101 and a lower quartz bell jar 102, which together form a sealed space to provide a relatively pure sealed environment for epitaxial growth.

[0054] The heating module is used for heat control during epitaxial growth to provide a suitable temperature for epitaxial deposition. The heating module includes multiple sets of heating units located at different positions. In one embodiment, the heating module includes a first heating unit 103a located at the top of the process chamber and used to heat the central region of the base 104; a second heating unit 103b located at the top of the process chamber and used to heat the edge region of the base 104; a third heating unit 103c located at the bottom of the process chamber and used to heat the central region of the base 104; and a fourth heating unit 103d located at the bottom of the process chamber and used to heat the edge region of the base 104. The dashed lines roughly indicate the approximate heating range of each heating unit.

[0055] The base 104 is used to support the wafer 200. The preheating ring 105 surrounds the base 104. The preheating ring 105 is heated by the second heating unit 103b and the fourth heating unit 103d, which extends the thermal control area beyond the edge of the wafer 200 and preheats the gas that is about to reach the edge of the wafer 200.

[0056] The reactive gas flows from the inlet cover 106 on one side of the process chamber through the carrier gas, passing over the surface of the wafer 200 supported on the base 104 for vapor phase growth. At the same time, residual gas is discharged from the interior of the process chamber through the exhaust insert 107. The arrows in the figure roughly indicate the direction of gas flow.

[0057] like Figure 2 As shown, the epitaxial reactor includes a transfer chamber and a process chamber that are interconnected. Specifically, the transfer blades in the front-end module (position 2) transfer the wafer 200 from the loading port (position 1) to the load locking unit (position 3), where the load locking unit is evacuated and backfilled with nitrogen. The transfer blades located in the transfer unit (position 4) transfer the wafer 200 from the load locking unit into the process chamber (position 5) for epitaxial growth. After growth is completed, the wafer 200 returns along the original path.

[0058] An openable slit door is provided at the connection between the transfer chamber and the process chamber. During implementation, the slit door is opened, and the transfer blade carrying the wafer 200 enters the process chamber from the transfer chamber through the slit door. Inside the process chamber, three lifting pins rise and lift the wafer 200. The transfer blade returns to the transfer chamber through the slit door. The slit door is closed, and the process chamber base 104 rises to carry the wafer 200.

[0059] During the loading process of wafer 200 from the transport chamber into the process chamber, it deforms due to thermal stress. Specifically, the deformation at the wafer 200's edges causes friction with the base 104, resulting in particle generation.

[0060] like Figure 3As shown, in one embodiment, the method includes the following steps:

[0061] Step 301: Obtain the real-time edge deformation of the wafer;

[0062] Step 302: Compare the preset wafer edge deformation amount with the real-time edge deformation amount of the wafer. When the real-time edge deformation amount of the wafer is greater than the preset wafer edge deformation amount, adjust the total heating power of the heating module and the power ratio of different heating units until the real-time edge deformation amount of the wafer is less than or equal to the preset wafer edge deformation amount.

[0063] In the technical solution of this embodiment, the real-time edge deformation of the wafer is first detected. When the real-time edge deformation of the wafer is greater than the preset edge deformation, the heating mode of the heating device is adjusted so that the real-time edge deformation of the wafer is reduced to the required range.

[0064] It is important to understand that in this embodiment, the wafer edge deformation is caused by thermal stress. During epitaxial growth, factors such as changes in the ambient temperature of the wafer can cause deformation due to thermal stress. In this embodiment, when wafer deformation is detected, the total heating power of the heating module and the power ratio of different heating units are adjusted to regulate the temperature of the wafer's environment. This balances the impact of thermal stress on the wafer's shape, reducing shape changes and minimizing particle aggregation at the wafer's edge, thus improving wafer yield and quality.

[0065] In some embodiments, images of the wafer can be directly acquired, and the real-time edge deformation of the wafer can be confirmed by comparing the acquired wafer images before and after and with the initial state.

[0066] In other embodiments, the real-time edge deformation of the wafer can also be determined by detecting other state parameters of the wafer.

[0067] In some embodiments, step 301 above includes:

[0068] The height of the base and the minimum distance between the edge of the wafer and the edge of the base are detected.

[0069] The real-time edge deformation of the wafer is determined based on the height value and the minimum distance.

[0070] In some other embodiments, step 301 above includes:

[0071] Detect the height of the base and the temperature above the wafer;

[0072] The real-time edge deformation of the wafer is determined based on the height of the base and the temperature above the wafer.

[0073] In one embodiment, the real-time edge deformation of the wafer is determined by combining the height value of the base with the minimum distance between the edge of the wafer and the edge of the base. In another embodiment, the real-time edge deformation of the wafer is determined by the height value of the base and the temperature above the wafer. Thus, this embodiment enriches the means of determining the real-time edge deformation of the wafer and enables the determination of the real-time edge deformation of the wafer by detecting different state parameters.

[0074] In one embodiment, step 302 above includes:

[0075] Obtain the trend of the height value and the range of temperature variation above the wafer;

[0076] When the height value is trending upward and the temperature above the wafer is outside the preset temperature range, the heating module is controlled to heat in a first heating mode.

[0077] When the trend of the height value is stable and the temperature above the wafer is within the preset temperature range, the heating module is controlled to heat in the second heating mode.

[0078] In some embodiments, step 302 includes:

[0079] Obtain the trend of the height value and the range of the minimum distance;

[0080] When the height value is trending upward and the minimum distance is outside the preset distance range, the heating module is controlled to heat in the first heating mode.

[0081] When the height value is stable and the minimum distance is within the preset distance range, the heating module is controlled to heat in the second heating mode.

[0082] In this embodiment, the control process is divided into two stages based on the wafer's position: the wafer transfer process and the wafer loading process.

[0083] The wafer transfer process is achieved by detecting the height of the substrate. It's important to understand that during wafer loading, the substrate needs to continuously rise until it fully supports the wafer. In practice, a reference position can be used, and the relative position between this reference position and the substrate is measured to determine the substrate's height. During this process, it can be detected that the substrate's height is increasing, and that the increasing pattern matches the mode set by the device.

[0084] For example, if the epitaxial reactor is configured to control the base to rise linearly, then if a linear increase in the height of the base is detected, it is considered to be in the loading process. If the base moves and rises in other modes, the detection of the height value should also conform to its set mode.

[0085] Once the wafer is loaded, the position of the base remains unchanged. In other words, at this point, the height value shows a stable trend.

[0086] During implementation, the trend of the base height can be determined by calculating the change in the base height per unit time, or by plotting the height change curve and analyzing the slope of the height curve at each moment.

[0087] In summary, in this embodiment, the wafer loading process can be determined based on the height of the base.

[0088] In this embodiment, the heating method for the wafer is further adjusted according to the temperature above the wafer or the range of minimum distance.

[0089] In this embodiment, the temperature above the wafer can be determined based on the detected temperature change above it. In practice, a corresponding preset temperature range can be set. Here, the preset temperature range can be a temperature range that affects wafer deformation, set based on experience, test results, etc.

[0090] like Figure 4 As shown, Figure 4 Line 401 represents the height of the base, and line 402 represents the temperature above the wafer. The area within the dotted-line box represents the loading process, during which the height gradually increases. After reaching the designated position, the base position remains fixed, and the height stabilizes. The two horizontal dashed lines represent the preset temperature range for the temperature above the wafer. Based on this temperature range, either the first or second heating mode can be selected.

[0091] like Figure 5 As shown, Figure 5 Line 501 represents the height of the base, and line 502 represents the minimum distance. Figure 4 Similarly, in the illustrated embodiment, the two horizontal dashed lines represent a preset distance range for the minimum distance. Based on the minimum distance, the corresponding first heating mode or second heating mode can be selected.

[0092] For example, the distance range that affects wafer deformation can be set based on experience, experiments, or test results.

[0093] In the first heating mode, the heating power of the central region at the top of the wafer is greater than that of the edge region at the top of the wafer, and the heating power of the central region at the bottom of the wafer is less than that of the edge region at the bottom of the wafer.

[0094] In the second heating mode, the heating power in the central region at the bottom of the wafer is less than the heating power in the edge region at the bottom of the wafer.

[0095] Furthermore, in some embodiments, in the first heating mode, the total heating power of the heating module is 28 to 35 kW, for example, it can be different values ​​such as 28 kW, 29 kW, 30 kW, 33 kW, and 35 kW. In the second heating mode, the total heating power of the heating module is 28 to 62 kW, for example, it can be different values ​​such as 28 kW, 30 kW, 35 kW, 40 kW, 50 kW, 55 kW, 58 kW, 60 kW, and 62 kW.

[0096] In some embodiments, in the first heating mode, the first power percentage is 28% to 62%, and for example, it can be different values ​​such as 28%, 32%, 35%, 40%, 43%, 45%, 50%, 55%, 60%, 62%, etc.; the second power percentage is 58% to 87%, and for example, it can be different values ​​such as 58%, 60%, 65%, 70%, 75%, 80%, 85%, 87%, etc.; and the third power percentage is 13% to 27%, and for example, it can be different values ​​such as 13%, 15%, 20%, 22%, 23%, 25%, 27%, etc.

[0097] In the second heating mode, the first power percentage is 28% to 62%, for example, it can be different values ​​such as 28%, 32%, 35%, 40%, 43%, 45%, 50%, 55%, 60%, 62%, etc.; the second power percentage is 18% to 87%, for example, it can be different values ​​such as 18%, 20%, 25%, 30%, 35%, 40%, 45%, 50%, 55%, 60%, 65%, 70%, 75%, 80%, 87%, etc.; and the third power percentage is 13% to 27%, for example, it can be different values ​​such as 13%, 15%, 17%, 20%, 23%, 25%, 27%, etc.

[0098] In this embodiment, the first power ratio is the ratio of the total power of the second heating unit and the fourth heating unit to the total power of the heating module, the second power ratio is the ratio of the power of the first heating unit to the sum of the power of the first heating unit and the power of the second heating unit, and the third power ratio is the ratio of the power of the third heating unit to the sum of the power of the third heating unit and the fourth heating unit.

[0099] In some embodiments, in the first heating mode, the first power accounts for 28% to 32%, the second power accounts for 75% to 80%, and the third power accounts for 20% to 27%.

[0100] In the second heating mode, the first power accounts for 48% to 52%, the second power accounts for 46% to 49%, and the third power accounts for 18% to 23%.

[0101] More specifically, in one embodiment, the total heating power of the heating module is 30kW. In the first heating mode, the first power accounts for 30%, the second power accounts for 77%, and the third power accounts for 25%.

[0102] In the second heating mode, the total heating power of the heating module is 30kW, with the first power accounting for 50%, the second power accounting for 48%, and the third power accounting for 21%.

[0103] like Figure 6 and Figure 7 As shown, Figure 6 The number of 90-nanometer-level particles is shown in the figure. It can be seen that after applying the technical solution of the embodiments of this application, the average number of 90-nanometer-level particles has decreased from 1.3 to 0.3. Figure 7 The values ​​represent the number of 200-nanometer-level particles. The first four values ​​represent the particle count without temperature control, while the last two values ​​represent the particle count with temperature control according to the technical solution of this application embodiment. The average particle size decreases from 0.43 nanometers to 0.19 nanometers. Therefore, it is evident that the technical solution of this embodiment can significantly improve wafer quality.

[0104] This invention provides an epitaxial wafer production apparatus applied to an epitaxial reactor. The epitaxial reactor includes a process chamber and a heating module located within the process chamber. The heating module includes multiple heating units located at different positions.

[0105] The device includes:

[0106] The acquisition module is used to acquire the real-time edge deformation of the wafer;

[0107] The control module is used to compare a preset wafer edge deformation amount with the real-time edge deformation amount of the wafer. When the real-time edge deformation amount of the wafer is greater than the preset wafer edge deformation amount, the total heating power of the heating module and the power ratio of different heating units are adjusted until the real-time edge deformation amount of the wafer is less than or equal to the preset wafer edge deformation amount.

[0108] In some embodiments, the process chamber includes a base for supporting the wafer;

[0109] The acquisition module includes:

[0110] The first detection submodule is used to detect the height value of the base and the minimum distance between the edge of the wafer and the edge of the base;

[0111] The first determining submodule is used to determine the real-time edge deformation of the wafer based on the height value and the minimum distance.

[0112] In some embodiments, the control module includes:

[0113] The first acquisition submodule is used to acquire the changing trend of the height value and the changing range of the minimum distance;

[0114] The first control submodule is used to control the heating module to heat in a first heating mode when the change trend of the height value is upward and the minimum distance is outside the preset distance range.

[0115] The second control submodule is used to control the heating module to heat in a second heating mode when the trend of the height value is stable and the minimum distance is within the preset distance range.

[0116] In the first heating mode, the heating power of the central region at the top of the wafer is greater than the heating power of the edge region at the top of the wafer, and the heating power of the central region at the bottom of the wafer is less than the heating power of the edge region at the bottom of the wafer.

[0117] In the second heating mode, the heating power of the central region at the bottom of the wafer is less than the heating power of the edge region at the bottom of the wafer.

[0118] In some embodiments, the process chamber includes a base for supporting the wafer;

[0119] The acquisition module includes:

[0120] A detection submodule is used to detect the height of the base and the temperature above the wafer;

[0121] The second determining submodule is used to determine the real-time edge deformation of the wafer based on the height value of the base and the temperature above the wafer.

[0122] In some embodiments, the control module includes:

[0123] The second detection submodule is used to obtain the trend of the height value and the range of temperature change above the wafer;

[0124] The first control submodule is used to control the heating module to heat in a first heating mode when the change trend of the height value is upward and the temperature above the wafer is outside the preset temperature range.

[0125] The second control submodule is used to control the heating module to heat in a second heating mode when the trend of the height value is stable and the temperature above the wafer is within the preset temperature range.

[0126] In the first heating mode, the heating power of the central region at the top of the wafer is greater than the heating power of the edge region at the top of the wafer, and the heating power of the central region at the bottom of the wafer is less than the heating power of the edge region at the bottom of the wafer.

[0127] In the second heating mode, the heating power of the central region at the bottom of the wafer is less than the heating power of the edge region at the bottom of the wafer.

[0128] In some embodiments, in the first heating mode, the total heating power of the heating module is 28 to 35 kW, and in the second heating mode, the total heating power of the heating module is 28 to 62 kW.

[0129] In some embodiments, the heating module includes a first heating unit located at the top of the process chamber and for heating the central region of the base, a second heating unit located at the top of the process chamber and for heating the edge region of the base, a third heating unit located at the bottom of the process chamber and for heating the central region of the base, and a fourth heating unit located at the bottom of the process chamber and for heating the edge region of the base.

[0130] In the first heating mode, the first power accounts for 28% to 62%, the second power accounts for 58% to 87%, and the third power accounts for 13% to 27%; and / or

[0131] In the second heating mode, the first power accounts for 28% to 62%, the second power accounts for 18% to 87%, and the third power accounts for 13% to 27%.

[0132] Wherein, the first power ratio is the ratio of the sum of the power of the second heating unit and the fourth heating unit to the total power of the heating module, the second power ratio is the ratio of the power of the first heating unit to the sum of the power of the first heating unit and the second heating unit, and the third power ratio is the ratio of the power of the third heating unit to the sum of the power of the third heating unit and the fourth heating unit.

[0133] In some embodiments, in the first heating mode, the first power accounts for 28% to 32%, the second power accounts for 75% to 80%, and the third power accounts for 20% to 27%; and / or

[0134] In the second heating mode, the first power accounts for 48% to 52%, the second power accounts for 46% to 49%, and the third power accounts for 18% to 23%.

[0135] The above description represents the preferred embodiments of the present invention. It should be noted that those skilled in the art can make various improvements and modifications without departing from the principles of the present invention, and these improvements and modifications should also be considered within the scope of protection of the present invention.

Claims

1. A method for producing epitaxial wafers, characterized in that, It is applied to an epitaxial reactor, the epitaxial reactor including a process chamber and a heating module located in the process chamber, the heating module including multiple heating units located at different positions; The method includes the following steps: Obtain the real-time edge deformation of the wafer; Compare the preset wafer edge deformation amount with the real-time edge deformation amount of the wafer. When the real-time edge deformation amount of the wafer is greater than the preset wafer edge deformation amount, adjust the total heating power of the heating module and the power ratio of different heating units until the real-time edge deformation amount of the wafer is less than or equal to the preset wafer edge deformation amount. The process chamber includes a base for supporting the wafer. Adjusting the total heating power of the heating module and the power ratio of different heating units includes: The trend of the height value of the base is obtained, as well as the range of the minimum distance between the edge of the wafer and the edge of the base; When the height value is trending upward and the minimum distance is outside the preset distance range, the heating module is controlled to heat in the first heating mode. When the trend of the height value is stable and the minimum distance is within the preset distance range, the heating module is controlled to heat in the second heating mode. In the first heating mode, the heating power of the central region at the top of the wafer is greater than the heating power of the edge region at the top of the wafer, and the heating power of the central region at the bottom of the wafer is less than the heating power of the edge region at the bottom of the wafer. In the second heating mode, the heating power of the central region at the bottom of the wafer is less than the heating power of the edge region at the bottom of the wafer; or Adjusting the total heating power of the heating module and the power ratio of different heating units includes: Obtain the trend of the height value and the range of temperature variation above the wafer; When the height value is trending upward and the temperature above the wafer is outside the preset temperature range, the heating module is controlled to heat in a first heating mode. When the trend of the height value is stable and the temperature above the wafer is within the preset temperature range, the heating module is controlled to heat in the second heating mode. In the first heating mode, the heating power of the central region at the top of the wafer is greater than the heating power of the edge region at the top of the wafer, and the heating power of the central region at the bottom of the wafer is less than the heating power of the edge region at the bottom of the wafer. In the second heating mode, the heating power of the central region at the bottom of the wafer is less than the heating power of the edge region at the bottom of the wafer.

2. The method as described in claim 1, characterized in that, In the first heating mode, the total heating power of the heating module is 28 to 35 kW, and in the second heating mode, the total heating power of the heating module is 28 to 62 kW.

3. The method as described in claim 2, characterized in that, The heating module includes a first heating unit located at the top of the process chamber and used to heat the central region of the base, a second heating unit located at the top of the process chamber and used to heat the edge region of the base, a third heating unit located at the bottom of the process chamber and used to heat the central region of the base, and a fourth heating unit located at the bottom of the process chamber and used to heat the edge region of the base. In the first heating mode, the first power accounts for 28% to 62%, the second power accounts for 58% to 87%, and the third power accounts for 13% to 27%; and / or In the second heating mode, the first power accounts for 28% to 62%, the second power accounts for 18% to 87%, and the third power accounts for 13% to 27%. Wherein, the first power ratio is the ratio of the sum of the power of the second heating unit and the fourth heating unit to the total power of the heating module, the second power ratio is the ratio of the power of the first heating unit to the sum of the power of the first heating unit and the second heating unit, and the third power ratio is the ratio of the power of the third heating unit to the sum of the power of the third heating unit and the fourth heating unit.

4. The method as described in claim 3, characterized in that, In the first heating mode, the first power accounts for 28% to 32%, the second power accounts for 75% to 80%, and the third power accounts for 20% to 27%; and / or In the second heating mode, the first power accounts for 48% to 52%, the second power accounts for 46% to 49%, and the third power accounts for 18% to 23%.

5. An epitaxial wafer production apparatus, characterized in that, It is applied to an epitaxial reactor, the epitaxial reactor including a process chamber and a heating module located in the process chamber, the heating module including multiple heating units located at different positions; The device includes: The acquisition module is used to acquire the real-time edge deformation of the wafer; The control module is used to compare the preset wafer edge deformation amount with the real-time edge deformation amount of the wafer. When the real-time edge deformation amount of the wafer is greater than the preset wafer edge deformation amount, the total heating power of the heating module and the power ratio of different heating units are adjusted until the real-time edge deformation amount of the wafer is less than or equal to the preset wafer edge deformation amount. The process chamber includes a base for supporting the wafer. The control module is specifically used to acquire the trend of the height of the base and the range of the minimum distance between the edge of the wafer and the edge of the base. When the height trend is upward and the minimum distance is outside a preset range, the heating module is controlled to heat in a first heating mode. When the height trend is stable and the minimum distance is within the preset range, the heating module is controlled to heat in a second heating mode. In the first heating mode, the heating power of the central region at the top of the wafer is greater than the heating power of the edge region at the top of the wafer, and the heating power of the central region at the bottom of the wafer is less than the heating power of the edge region at the bottom of the wafer. In the second heating mode, the heating power of the central region at the bottom of the wafer is less than the heating power of the edge region at the bottom of the wafer. or The system acquires the trend of the height value and the range of temperature change above the wafer. When the height value is trending upwards and the temperature above the wafer is outside a preset temperature range, the heating module is controlled to heat in a first heating mode. When the height value is trending steadily and the temperature above the wafer is within the preset temperature range, the heating module is controlled to heat in a second heating mode. In the first heating mode, the heating power of the central region at the top of the wafer is greater than the heating power of the edge region at the top of the wafer, and the heating power of the central region at the bottom of the wafer is less than the heating power of the edge region at the bottom of the wafer. In the second heating mode, the heating power of the central region at the bottom of the wafer is less than the heating power of the edge region at the bottom of the wafer.

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