Method for manufacturing semiconductor laser element, semiconductor laser element

Abstract

A method for manufacturing a semiconductor laser element (1) having multiple waveguides (21) includes: a first slitting step, wherein a substrate (10) having a nitride-based semiconductor laser stack structure (20) is slitted along a first direction to form a slitting substrate (3); a cleaving step, wherein the slitting substrate (3) is cleaved along a second direction orthogonal to the first direction to form a semiconductor laser element (5); and a second slitting step, wherein the semiconductor laser element (5) is slitted along the first direction to remove at least one end of the semiconductor laser element (5) in its longer direction; the cleaving step includes a first cleaving step in which a cleaving guide groove (4) extending in the second direction is formed on the slitting substrate (3), and a second cleaving step in which the slitting substrate (3) is cleaved along the longer direction of the cleaving guide groove (4); in the second slitting step, the portion of the semiconductor laser element (5) including the cleaving guide groove (4) is removed.

Description

Technical Field

[0001] This invention relates to a method for manufacturing a semiconductor laser element, a semiconductor laser element, and a semiconductor laser device having a semiconductor laser element. Background Technology

[0002] Semiconductor laser elements have advantages such as long lifespan, high efficiency, and small size, so they are used as light sources for a wide variety of applications, such as image display devices like projectors. Their applications have also expanded to include light sources for automotive headlights or laser processing equipment.

[0003] In recent years, there has been a growing demand for higher output from semiconductor laser components. For example, semiconductor laser components used as light sources in laser processing equipment require high output exceeding 1 watt.

[0004] In this case, if a high-output laser is emitted from a single emitter (light-emitting part), the optical density at the front end of the emitted laser may become too high, resulting in COD (Catastrophic Optical Damage) at the front end.

[0005] Therefore, in order to emit laser light from a single semiconductor laser element with a large output, a semiconductor laser element with a multi-emitter structure integrating multiple emitters has been proposed (e.g., Patent Document 1). Such a semiconductor laser element is configured, for example, as a laser strip with multiple waveguides.

[0006] Existing technical documents

[0007] Patent documents

[0008] Patent Document 1: Japanese Patent Application Publication No. 2007-073669 Summary of the Invention

[0009] The problem that the invention aims to solve

[0010] Semiconductor laser elements having multiple waveguides are formed, for example, by dividing a substrate (wafer) having a semiconductor laminate structure made of a semiconductor material such as a nitride semiconductor material. In this case, a dividing groove is formed on the substrate having the semiconductor laminate structure by laser scribing, and the substrate is divided into multiple parts by cutting and cleaving the substrate with the dividing groove.

[0011] At this time, because the semiconductor materials such as nitride crystals and the substrate are melted and sputtered by laser scribing, processing debris called debris will accumulate in the part where the laser scribing was applied and its surrounding area.

[0012] However, if there are slits and debris remaining in the mounting area of ​​the semiconductor laser element, when the semiconductor laser element is mounted to the sub-assembly board, etc., adverse conditions may occur, such as the semiconductor laser element tilting and not being able to be mounted in the prescribed posture, and the characteristics of the semiconductor laser element deteriorating.

[0013] Typically, the basic structure of a semiconductor laser element, such as a waveguide and semiconductor stack-up, is formed on the front side (e.g., the p-side) of a substrate. On the other hand, only electrodes (e.g., n-electrodes) are formed on the back side of the substrate. The electrode layout on the back side is mask-matched relative to the shape on the front side (e.g., the p-electrode pattern). Therefore, a deviation within the mask-matching accuracy occurs between the basic structure of the semiconductor laser element on the front side and the electrode pattern on the back side. As will be described later, the end face of a laser resonator fabricated using cleaving should be formed to match the basic structure of the semiconductor laser element with the highest possible accuracy. Therefore, the laser scribing required for cleaving should ideally be performed to match the pattern on the front side, rather than on the back side where there is a mask-matching deviation.

[0014] When mounting a semiconductor laser element to a sub-assembly board or similar surface using the p-side as the mounting surface in a junction-down (face-down) mounting configuration, the aforementioned mounting defects can occur if laser scribing is performed on the p-side of the semiconductor laser element, resulting in sizing grooves or debris in the mounting area. However, laser scribing of the p-side is necessary to correctly fabricate the resonator to match the basic structure of the semiconductor laser element. This creates a conflict between the requirements of the mounting process and the requirements of chip fabrication.

[0015] This disclosure was made to solve such a problem, and its purpose is to provide a method for manufacturing a semiconductor laser element that can produce a semiconductor laser element, which can suppress the occurrence of adverse conditions when the semiconductor laser element is installed on a sub-assembly board or the like.

[0016] Methods used to solve problems

[0017] To achieve the above objectives, a technical solution of the semiconductor laser element manufacturing method disclosed herein is a method for manufacturing a semiconductor laser element having multiple waveguides, characterized by comprising: a first slitting step, wherein a substrate having a nitride-based semiconductor laser laminate structure having multiple waveguides is slitted along a first direction to fabricate multiple slit substrates having multiple waveguides spaced apart in a second direction orthogonal to the first direction and parallel to a first main surface, wherein the multiple waveguides extend in the first direction parallel to the first main surface; and a cleaving step, wherein one of the multiple slit substrates fabricated by the first slitting step is cleaved along the second direction to separate the waveguides from the first main surface. The process involves fabricating multiple semiconductor laser elements, each having a plurality of the aforementioned waveguides; and a second slitting process, in which one of the multiple semiconductor laser elements fabricated by the aforementioned slitting process is slitted along the aforementioned first direction, thereby removing at least one end of the semiconductor laser element in the aforementioned second direction; the aforementioned slitting process includes a first slitting process in which a slitting guide groove extending in the aforementioned second direction is formed on the aforementioned slitting substrate, and a second slitting process in which the aforementioned slitting guide groove is slitted along the aforementioned second direction; in the aforementioned second slitting process, the portion including the aforementioned slitting guide groove is removed as one end of the aforementioned semiconductor laser element in the aforementioned second direction.

[0018] Furthermore, another technical solution of the semiconductor laser element manufacturing method disclosed herein is a method for manufacturing a semiconductor laser element having multiple waveguides, characterized by comprising: a first slitting step, wherein a substrate having a nitride-based semiconductor laser stack structure having multiple waveguides is slitted along a first direction to fabricate multiple slit substrates having multiple waveguides spaced apart in a second direction orthogonal to the first direction and parallel to the first main surface, wherein the multiple waveguides extend in the first direction parallel to the first main surface; and a cleaving step, wherein the substrate fabricated by the first slitting step is cleaved... One of the aforementioned multiple segmented substrates is cleaved along a second direction orthogonal to the first direction and parallel to the first main surface, thereby fabricating multiple semiconductor laser elements each having multiple waveguides; the semiconductor laser element has a first side parallel to the first direction and a second side opposite to the first side; in the semiconductor laser element, the shortest interval between two adjacent waveguides is defined as the first interval, and the interval between the waveguide closest to the first side and the first side is defined as the second interval, the second interval being wider than the first interval.

[0019] Furthermore, a technical solution of the semiconductor laser element disclosed herein includes: a substrate having a first main surface and a second main surface opposite to the first main surface; and a nitride-based semiconductor laser stack structure formed above the first main surface of the substrate, having a plurality of waveguides extending in a first direction parallel to the first main surface; the semiconductor laser element having a first side surface orthogonal to the first main surface and parallel to the first direction, a second side surface opposite to the first side surface, and a third side surface orthogonal to the first main surface and orthogonal to the first direction; the semiconductor laser element having a first region and a second region, the first region being a region in which the plurality of waveguides are formed, and the second region being a region sandwiched between the first region and the first side surface; when the semiconductor laser element is viewed from the first direction, a step portion recessed inward from the second main surface side of the semiconductor laser element is formed on the first side surface.

[0020] Furthermore, another technical solution of the semiconductor laser element disclosed herein includes: a substrate having a first main surface and a second main surface opposite to the first main surface; and a nitride-based semiconductor laser stack structure formed above the first main surface of the substrate, having a plurality of waveguides extending in a first direction parallel to the first main surface; the semiconductor laser element having a first side surface orthogonal to the first main surface and parallel to the first direction, a second side surface opposite to the first side surface, and a third side surface orthogonal to the first main surface and orthogonal to the first direction; the semiconductor laser element having a first region and a second region, the first region being a region in which the plurality of waveguides are formed, and the second region being a region sandwiched between the first region and the first side surface; the shortest interval between two adjacent waveguides is defined as the first interval, and the interval between the waveguide closest to the first side surface and the first side surface is defined as the second interval, the second interval being wider than the first interval.

[0021] Furthermore, one technical solution of the semiconductor laser device disclosed herein includes: any of the above-mentioned semiconductor laser elements; a sub-assembly plate on which the semiconductor laser elements are mounted; and the semiconductor laser elements are mounted on the sub-assembly plate such that the first main surface side faces the sub-assembly plate.

[0022] Invention Effects

[0023] According to this disclosure, it is possible to suppress adverse conditions that may occur when the sub-assembly plate or the like is installed. Attached Figure Description

[0024] Figure 1 This is a diagram showing the structure of a semiconductor laser element according to an embodiment.

[0025] Figure 2 This is a side view of the semiconductor laser element according to the embodiment.

[0026] Figure 3 This diagram illustrates the process of fabricating a semiconductor multilayer substrate in the manufacturing method of a semiconductor laser element according to an embodiment.

[0027] Figure 4 This diagram illustrates the process (first dividing step) of dividing a semiconductor laminated substrate to create a dividing substrate in the manufacturing method of a semiconductor laser element according to an embodiment.

[0028] Figure 5 This diagram illustrates the process (first cleavage process) of forming a cleavage guide groove on a cleavage substrate in the manufacturing method of a semiconductor laser element according to an embodiment.

[0029] Figure 6 This diagram illustrates the process (second cleaving process) in the manufacturing method of a semiconductor laser element according to an embodiment, in which a cleaving substrate is divided.

[0030] Figure 7A This is the first example of the cleavage sequence when dividing a substrate.

[0031] Figure 7B This is the second example of a diagram showing the cleavage sequence when dividing a substrate.

[0032] Figure 8 This diagram illustrates the process of forming a segmentation groove on a segmentation substrate in the manufacturing method of a semiconductor laser element according to an embodiment.

[0033] Figure 9 It is a diagram showing the SEM image of a semiconductor laser element with a segmented groove and a cross-section of the semiconductor laser element along line A-A.

[0034] Figure 10 This diagram illustrates the process (second dividing process) of removing the end of a semiconductor laser element in the manufacturing method of the semiconductor laser element in the embodiment.

[0035] Figure 11 This is a microscopic photograph of a semiconductor laser element with its ends removed and its first side surface viewed from direction B.

[0036] Figure 12A This diagram shows the state in which the semiconductor laser element of the comparative example is mounted on the heat sink with the junction facing downwards.

[0037] Figure 12B This diagram shows the state in which the semiconductor laser element of the embodiment is mounted on the heat sink with the junction facing downwards.

[0038] Figure 13 This is a diagram showing the structure of a modified semiconductor laser element.

[0039] Figure 14 This is a diagram showing the structure of the first semiconductor laser device according to the embodiment.

[0040] Figure 15 This is a diagram showing the structure of the second semiconductor laser device according to the embodiment.

[0041] Figure 16 This is a diagram showing the structure of the third semiconductor laser device according to the embodiment.

[0042] Figure 17 This is a diagram showing the structure of the fourth semiconductor laser device according to the embodiment. Detailed Implementation

[0043] Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings. Furthermore, the embodiments described below represent preferred examples of the present disclosure. Therefore, the numerical values, shapes, materials, constituent elements, the arrangement and connection of constituent elements, and the steps (processes) and their order shown in the following embodiments are merely examples and are not intended to limit the present invention.

[0044] In addition, the figures are schematic diagrams and not necessarily strict representations. Furthermore, substantially identical structures are assigned the same labels in all figures, and repeated explanations are omitted or simplified.

[0045] Furthermore, in this specification and accompanying drawings, the X-axis, Y-axis, and Z-axis represent the three axes of a three-dimensional orthogonal coordinate system. In this embodiment, the Z-axis direction is set as the vertical direction, and the direction perpendicular to the Z-axis (the direction parallel to the XY plane) is set as the horizontal direction. The X-axis and Y-axis are mutually orthogonal axes and both orthogonal to the Z-axis. In this embodiment, the Y-axis direction is the "first direction," and the X-axis direction is the "second direction." Furthermore, the Y-axis direction as the first direction and the X-axis direction as the second direction are in-plane directions of the substrate 10. That is, the Y-axis direction as the first direction and the X-axis direction as the second direction are parallel to the first main surface 11 and the second main surface 12 of the substrate 10. Furthermore, the extension direction of the waveguide 21 in the semiconductor laser element 1 (the laser resonator length direction) is defined as the Y-axis direction. Additionally, the direction in which the arrows of the X-axis, Y-axis, and Z-axis point is set as positive.

[0046] (Implementation Method)

[0047] [Structure of semiconductor laser elements]

[0048] First, use Figure 1 and Figure 2The structure of the semiconductor laser element 1 manufactured by the manufacturing method of the semiconductor laser element 1 of this embodiment will be explained. Figure 1 This is a diagram showing the structure of the semiconductor laser element 1 according to the embodiment. Figure 1 In the diagram, (a) represents a top view of the semiconductor laser element 1, (b) represents a rear view of the semiconductor laser element 1, and (c) represents a front view of the semiconductor laser element 1. Furthermore, Figure 2 This is a side view of the semiconductor laser element.

[0049] In addition, Figure 1 In order to facilitate understanding of the regions where the p-side electrode 30 and the n-side electrode 40 are formed, the p-side electrode 30 and the n-side electrode 40 are shaded for convenience. Furthermore, in Figure 1 In the diagram, to indicate the position of waveguide 21, its centerline is represented by a dashed line. This same method is used in subsequent diagrams. Furthermore, in... Figure 2 In order to make it easier to understand the area with the step difference 50, the step difference 50 is given a dotted shadow for convenience.

[0050] The semiconductor laser element 1 in this embodiment is a semiconductor laser with a multi-emitter structure that integrates multiple emitters on a single element, emitting multiple laser beams. Specifically, the semiconductor laser element 1 is a nitride-based semiconductor laser made of a nitride-based semiconductor material, for example, emitting blue laser light.

[0051] like Figure 1 and Figure 2 As shown, the semiconductor laser element 1 is a laser strip with an elongated dimension in the X-axis direction, and has a substrate 10, a nitride-based semiconductor laser stacked structure 20, a p-side electrode 30, and an n-side electrode 40.

[0052] The substrate 10 has a first main surface 11 and a second main surface 12. The second main surface 12 is the side opposite to the first main surface 11 and faces away from the first main surface 11. In this embodiment, the first main surface 11 is the p-side, which is the front side, and the second main surface 12 is the n-side, which is the back side.

[0053] The substrate 10 may be a semiconductor substrate such as a nitride semiconductor substrate. In this embodiment, a hexagonal n-type GaN substrate is used as the substrate 10.

[0054] The nitride-based semiconductor laser stack structure 20 is a nitride semiconductor layer stack having multiple nitride semiconductor layers, each made of a nitride-based semiconductor material. The nitride-based semiconductor laser stack structure 20 is formed above the first main surface 11 of the substrate 10. For example, the nitride-based semiconductor laser stack structure 20 has the following structure on the first main surface 11 of the substrate 10: an n-type cladding layer made of n-type AlGaN, an active layer made of undoped InGaN, a p-type cladding layer made of p-type AlGaN, and a p-type contact layer made of p-type GaN, stacked sequentially.

[0055] In addition, in the nitride-based semiconductor laser stack structure 20, other nitride semiconductor layers such as a light guiding layer and an overflow suppression layer may be provided in addition to these nitride semiconductor layers. Furthermore, an insulating film with openings at positions corresponding to the waveguide 21 may be formed on the surface of the nitride-based semiconductor laser stack structure 20.

[0056] The nitride-based semiconductor laser stack-up structure 20 has a plurality of waveguides 21 extending in the Y-axis direction (a first direction parallel to the first main surface 11) within the surface of the substrate 10. The plurality of waveguides 21 are spaced apart in the X-axis direction (a direction orthogonal to the first direction and parallel to the first main surface 11). Specifically, the plurality of waveguides 21 are parallel to each other and formed at a predetermined spacing along the X-axis direction.

[0057] Each of the multiple waveguides 21 functions as both a current injection region and an optical waveguide in the semiconductor laser element 1. Furthermore, each of the multiple waveguides 21 corresponds to a specific emitter of the emitted laser beam. The multiple waveguides 21 are, for example, formed in a p-type cladding of a nitride-based semiconductor laser stack 20. As an example, the multiple waveguides 21 are ridge stripe structures, forming multiple ridges within the p-type cladding. In this case, the p-type contact layer can be either multiple semiconductor layers formed individually on each of the multiple ridges, or a single semiconductor layer continuously formed to cover the multiple ridges.

[0058] The p-side electrode 30 is formed on the nitride-based semiconductor laser stack structure 20. The p-side electrode 30 is, for example, composed of Pd, Pt, and Au. The p-side electrode 30 is formed, for example, on the p-type contact layer of the nitride-based semiconductor laser stack structure 20. Figure 1 As shown in (a), in this embodiment, multiple p-side electrodes 30 are formed in such a way that they correspond to each of the multiple waveguides 21 (protrusions). That is, the p-side electrodes 30 are formed in a segmented manner. Alternatively, the p-side electrodes 30 may not be segmented into multiple parts. For example, the p-side electrodes 30 may be a single electrode common to the multiple waveguides 21.

[0059] The n-side electrode 40 is formed on the second main surface 12 of the substrate 10. The n-side electrode 40 is, for example, composed of Ti, Pt, and Au. Figure 1 As shown in (b), in this embodiment, multiple n-side electrodes 40 are formed in such a way that they correspond to each of the multiple waveguides 21 (protrusions). That is, the n-side electrodes 40 are formed in a segmented manner. Alternatively, the n-side electrodes 40 may not be segmented into multiple parts. For example, the n-side electrodes 40 may also be a single electrode common to the multiple waveguides 21.

[0060] like Figure 1 As shown in (a) to (c), the semiconductor laser element 1 has a first side 1a, a second side 1b, a third side 1c and a fourth side 1d.

[0061] The first side surface 1a is one end face of the semiconductor laser element 1 along its longer direction, and the second side surface 1b is the other end face of the semiconductor laser element 1 along its longer direction. That is, the second side surface 1b is the side opposite to the first side surface 1a, facing away from the first side surface 1a. The longer direction of the semiconductor laser element 1 is the direction orthogonal to the longer direction of the waveguide 21, i.e., the X-axis direction.

[0062] In this embodiment, the first side surface 1a and the second side surface 1b are surfaces orthogonal to the first main surface 11 of the substrate 10 and parallel to the Y-axis direction (first direction). Specifically, the first side surface 1a and the second side surface 1b are surfaces parallel to the YZ plane.

[0063] The third side face 1c is one end face of the semiconductor laser element 1 in the shorter direction, and the fourth side face 1d is the other end face of the semiconductor laser element 1 in the shorter direction. That is, the fourth side face 1d is the side opposite to the third side face 1c, facing away from the third side face 1c. The shorter direction of the semiconductor laser element 1 is the direction parallel to the waveguide 21, i.e., the Y-axis direction.

[0064] In this embodiment, the third side surface 1c and the fourth side surface 1d are surfaces orthogonal to the first main surface 11 of the substrate 10 and to the Y-axis direction (first direction). That is, the third side surface 1c and the fourth side surface 1d are surfaces parallel to the X-axis direction (second direction). Specifically, the third side surface 1c and the fourth side surface 1d are surfaces parallel to the XZ plane and perpendicular to the first side surface 1a and the second side surface 1b.

[0065] In this embodiment, the third side surface 1c and the fourth side surface 1d are the resonator end faces of the semiconductor laser element 1. Specifically, the third side surface 1c is the front end face of the semiconductor laser element 1. That is, laser light is emitted from the third side surface 1c. Furthermore, the fourth side surface 1d is the rear end face of the semiconductor laser element 1. In addition, although not shown in the figure, the third side surface 1c and the fourth side surface 1d are covered with an end face coating film as a reflective film.

[0066] The first side surface 1a, the second side surface 1b, the third side surface 1c, and the fourth side surface 1d are the cleaving surfaces used in fabricating the semiconductor laser element 1 from the wafer, as detailed later. Specifically, the first side surface 1a and the second side surface 1b are cleaving surfaces formed along the Y-axis, and the third side surface 1c and the fourth side surface 1d are cleaving surfaces formed along the X-axis. Furthermore, the third side surface 1c and the fourth side surface 1d are cleaving surfaces formed by cleaving. Therefore, the flatness of the third side surface 1c is higher than that of each of the first side surface 1a and the second side surface 1b. Similarly, the flatness of the fourth side surface 1d is higher than that of each of the first side surface 1a and the second side surface 1b. Thus, laser light can be obtained by achieving good optical efficiency resonance within the waveguide 21 between the third side surface 1c and the fourth side surface 1d.

[0067] Furthermore, when the semiconductor laser element 1 is viewed from the X-axis direction, a step portion 50 is formed on the first side surface 1a, which is recessed inward from the surface of the second main surface 12 of the semiconductor laser element 1. Similarly, a step portion 50 is also formed on the second side surface 1b, which is recessed inward from the surface of the second main surface 12 of the semiconductor laser element 1. That is, the step portion 50 is formed in a manner that is recessed in the positive direction from the surface of the back side of the semiconductor laser element 1, i.e., the surface of the second main surface 12, towards the Z-axis direction.

[0068] like Figure 2 As shown, in this embodiment, the step portion 50 is formed from the surface on the side of the second main surface 12 and ends within the thickness of the substrate 10. It does not reach the nitride-based semiconductor laser stack structure 20. The depth of the step portion 50 is set to a value obtained after consideration to avoid electrical short circuits in the pn junction formed in the nitride-based semiconductor laser stack structure 20. In addition, as Figure 2 As shown by the dotted shadows, the side view shape of the step portion 50 when viewed from the X-axis direction is formed as a roughly trapezoid, but the shape of the step portion 50 is not limited to this.

[0069] Step difference part 50 Figure 1 As shown in (b), the semiconductor laser element 1 extends along the Y-axis when viewed from the Z-axis direction. However, the step portion 50 does not reach the third side 1c and the fourth side 1d. That is, one end of the step portion 50 in the Y-axis direction exists at a position retracted from the third side 1c, and the other end of the step portion 50 in the Y-axis direction exists at a position retracted from the fourth side 1d. In addition, the step portion 50 is part of the dividing groove 6 used when dividing the semiconductor laser element, as detailed later.

[0070] In addition, such as Figure 1As shown, the semiconductor laser element 1 has a first region 110 in which a plurality of waveguides 21 are formed, a second region 120 in which the first region 110 is sandwiched between the first region 110 and the first side 1a, and a third region 130 in which the first region 110 is sandwiched between the second side 1b.

[0071] In this embodiment, a p-side electrode 30 and an n-side electrode 40 are formed in the second region 120 and the third region 130, but a waveguide 21 is not formed. Therefore, the second region 120 and the third region 130 are regions that do not function as semiconductor lasers, and no laser light is emitted from the second region 120 and the third region 130.

[0072] Furthermore, if we define the shortest interval between two adjacent waveguides 21 in the plurality of waveguides 21 of the semiconductor laser element 1 as the first interval d1, the interval between the waveguide 21 closest to the first side 1a and the first side 1a in the plurality of waveguides 21 of the semiconductor laser element 1 as the second interval d2, and the interval between the waveguide closest to the second side 1b and the second side 1b in the plurality of waveguides 21 of the semiconductor laser element 1 as the third interval d3, then the second interval d2 and the third interval d3 are wider than the first interval d1.

[0073] In this embodiment, the first interval d1 exists in the first region 110. Specifically, all waveguides 21 in the first region 110 are formed with the same spacing. That is, all waveguides 21 in the first region 110 are formed at equal intervals, and the spacing between any two adjacent waveguides 21 in the first region 110 is all the same and is the first interval d1.

[0074] Furthermore, the second interval d2 is the width of the second region 120 in the X-axis direction, and the third interval d3 is the width of the third region 130 in the X-axis direction. In this embodiment, the second interval d2 and the third interval d3 are the same, but it is not limited thereto.

[0075] As an example, the width (length in the X-axis direction) of the semiconductor laser element 1 is 9200 μm, and the length in the resonator direction (length in the Y-axis direction) of the semiconductor laser element 1 is 1200 μm. In this case, the first interval d1 is d1 = 400 μm, and the second interval d2 and the third interval d3 are d2 = d3 = 600 μm. That is, at both ends of the semiconductor laser element 1 in the longer direction, as regions where waveguides 21 do not exist, there are second regions 120 and third regions 130 with a width of 600 μm. In addition, the waveguides 21 in the first region 110 are formed in 21 places with a width of 30 μm and an interval of 400 μm, centered on a single-dot line.

[0076] [Manufacturing Method of Semiconductor Laser Components]

[0077] Next, while referring to Figure 1 While using Figures 3 to 11 The manufacturing method of the semiconductor laser element 1 according to the embodiment will be described. Figures 3 to 11 This is a diagram illustrating the manufacturing method of the semiconductor laser element 1 according to the embodiment. Additionally, in Figure 4 , Figure 5 , Figure 8 , Figure 10 In order to make it easier to understand the areas with debris, dotted shadows were applied to the debris for convenience.

[0078] The method for manufacturing the semiconductor laser element 1 in this embodiment is a method for manufacturing a semiconductor laser element 1 having multiple waveguides 21.

[0079] First, such as Figure 3 As shown, a semiconductor stacked substrate 2 with stacked semiconductor layers is fabricated. The semiconductor stacked substrate 2 forms a nitride-based semiconductor laser stack structure 20 with multiple waveguides 21, a p-side electrode 30, and an n-side electrode 40 on the substrate 10, which serves as a wafer.

[0080] As the substrate 10, for example, a hexagonal n-type GaN substrate is used. Therefore, in this embodiment, as... Figure 3 As shown, let the [11-20] direction of the GaN substrate be the X-axis direction, let the [1-100] direction of the GaN substrate be the Y-axis direction, and let the

[0001] direction of the GaN substrate be the Z-axis direction.

[0081] In fabricating the semiconductor stacked substrate 2, firstly, a 2-inch n-type GaN substrate wafer is prepared as substrate 10. Then, multiple nitride semiconductor layers are sequentially epitaxially grown on the entire surface of the first main surface 11 of substrate 10. For example, by metal-organic chemical vapor deposition (MOCVD), an n-type cladding layer composed of n-type AlGaN, an active layer composed of undoped InGaN, a p-type cladding layer composed of p-type AlGaN, and a p-type contact layer composed of p-type GaN are sequentially formed on the first main surface 11 of substrate 10. Then, multiple protrusions forming waveguides 21 are formed by photolithography and etching of the stacked multiple nitride semiconductor layers. Furthermore, the multiple waveguides 21 are formed along the [1-100] direction. Thus, a nitride-based semiconductor laser stacked structure 20 having multiple waveguides 21 can be formed on substrate 10. Next, an insulating film is formed to partially cover the nitride-based semiconductor laser stack structure 20, and then a p-side electrode 30 is formed on the protrusions of the nitride-based semiconductor laser stack structure 20. Then, the substrate 10 is thinned by grinding and polishing the back side of the substrate 10. As an example, for a semiconductor stack substrate 2 with a thickness of 400 μm, the back side of the substrate 10 is polished until the semiconductor stack substrate 2 becomes 85 μm thick. Then, an n-side electrode 40 is formed on the second main surface 12, which is the back side of the thinned substrate 10. Thus, the semiconductor stack substrate 2 can be fabricated.

[0082] Next, as part of the wafer shaping process, Figure 3 The semiconductor laminate substrate 2 shown is divided into multiple segments (first segmentation process). Specifically, by along... Figure 3 The single-dotted line indicates that the dividing line divides the semiconductor laminate substrate 2, cutting the area where the semiconductor laser element 1 (laser strip) is made into short strips.

[0083] In this embodiment, by along Figure 3 The eight dividing lines shown cut the semiconductor laminate substrate 2, as... Figure 4 Four segmented substrates 3 are fabricated as shown. In this case, in this embodiment, the semiconductor stacked substrate 2 is divided into four parts by laser scribing on the surface (i.e., the front side) of the first main surface 11 side of the substrate 10 of the semiconductor stacked substrate 2 and cutting it along the Y-axis direction.

[0084] In addition, Figure 3 and Figure 4The area enclosed by the dashed line is the effective area for removing the semiconductor laser element 1, and is the area for fabricating the semiconductor laser element 1. As an example, the width W of the area for fabricating the semiconductor laser element 1 (laser strip area) is 10000 μm. Therefore, the width W of each of the four segmented substrates 3 in the X-axis direction is 10000 μm. Furthermore, in... Figure 3 In the diagram, the shaded area is the PCM (process control monitor) region 2a, which is not used as the semiconductor laser element 1. The width of each PCM region 2a is, for example, 1200 μm.

[0085] Furthermore, when the thickness of the semiconductor laminate 2 is 85 μm, the depth of the scribe groove formed by laser scribing is approximately 50 μm from the surface of the first main surface 11 of the semiconductor laminate 2, and the width of the scribe groove when viewed from above is approximately 5 μm. In this case, as... Figure 4 As shown in the enlarged view, in order to cut the semiconductor laminate 2, a scribing groove is formed in the semiconductor laminate 2, thereby accumulating debris 3D with a width of approximately 30 μm on both sides of the scribing groove on the front side of the semiconductor laminate 2. The debris 3D is the processing debris of the semiconductor laminate 2 generated when the scribing groove is formed in the semiconductor laminate 2 by laser scribing. In this embodiment, it is accumulated on the p-side electrode side, which is the front side of the semiconductor laminate 2. In addition, the scribing groove in the first dicing process functions as a dicing groove for dividing the semiconductor laminate 2 into multiple dicing substrates 3.

[0086] Thus, in the first slitting process, the substrate 10, which has formed a nitride-based semiconductor laser stack structure 20 having multiple waveguides 21 that are spaced apart in the X-axis direction and extend in the Y-axis direction, is slid along the Y-axis direction to produce multiple slitting substrates 3 having multiple waveguides 21 that are spaced apart in the X-axis direction.

[0087] Furthermore, the laser scribing in the first dicing process is performed on the surface (front side) of the substrate 10 in the semiconductor multilayer substrate 2, which is the first main surface 11 side. However, it is not limited to this. That is, the laser scribing in the first dicing process can also be performed on the surface (back side) of the substrate 10 in the semiconductor multilayer substrate 2, which is the second main surface 12 side. However, in this case, debris 3D accumulates on the surface (i.e., the surface on the n-side electrode 40 side) of the substrate 10 in the semiconductor multilayer substrate 2, so the debris 3D may become an obstacle in the next process (cleaving process). Therefore, it is preferable that the laser scribing in the first dicing process is performed on the surface (front side) of the substrate 10 in the semiconductor multilayer substrate 2, which is the first main surface 11 side.

[0088] Next, one of the multiple segmented substrates 3 produced by the first segmentation process described above is cleaved along the X-axis direction to produce multiple semiconductor laser elements 5, each having multiple waveguides 21 (cleaving process).

[0089] In this embodiment, the cleaving process includes a first cleaving process in which a cleaving guide groove 4 extending in the X-axis direction is formed on the segmented substrate 3, and a second cleaving process in which the segmented substrate 3 is cleaved along the longer direction of the cleaving guide groove 4. The longer direction of the cleaving guide groove 4 is the X-axis direction, which is orthogonal to the waveguide 21.

[0090] The first cleaving process is a pre-process used to cleave the substrate 3. A cleaving guide groove 4 is formed as the starting point of cleaving. That is, the cleaving guide groove 4 is a guide groove when the substrate 3 is cleaved and divided, and functions as a groove for dividing the substrate 3 into multiple parts.

[0091] Specifically, in the first cleavage process, such as Figure 5 As shown, a cleavage guide groove 4 is formed near the first end face 3a, which is one end face of the segmented substrate 3. More specifically, the cleavage guide groove 4 is formed such that it cuts the end of the segmented substrate 3 from the first end face 3a toward the second end face 3b, which is the other end face. In this embodiment, a plurality of cleavage guide grooves 4 are formed on the segmented substrate 3 along the [11-20] direction by laser scribing. Therefore, the cleavage guide groove 4 is a laser scribing groove formed by laser scribing. Furthermore, the plurality of cleavage guide grooves 4 are formed at equal intervals along the Y-axis direction. As an example, the interval L between two adjacent cleavage guide grooves 4 is 1200 μm. This interval L of the cleavage guide grooves 4 is ultimately consistent with the length of the laser resonator of the semiconductor laser element 1. In addition, the depth of the cleavage guide groove 4 formed by laser scribing is about 40 μm from the surface of the first main surface 11 of the segmented substrate 3. Furthermore, in top view, the width of the cleavage guide groove 4 is about 5 μm and the length of the cleavage guide groove 4 is about 350 μm.

[0092] Furthermore, in this embodiment, laser scribing is applied to the surface of the substrate 10 of the segmented substrate 3 on the side of the first main surface 11 (i.e., the front surface on the side of the p-side electrode 30). This is because the cleaving guide groove 4 needs to be correctly aligned with the shape (i.e., the mask pattern) of the nitride-based semiconductor laser stack structure 20.

[0093] In this case, such as Figure 5 As shown in the enlarged view, by forming a cleavage guide groove 4 on the segmented substrate 3, debris 4D with a width of approximately 30 μm is deposited on both sides of the lateral side of the groove 4 on the front side of the segmented substrate 3. The debris 4D is the processing debris of the segmented substrate 3 generated when the cleavage guide groove 4 is formed on the segmented substrate 3 by laser scribing.

[0094] Furthermore, the cleavage guide groove 4 formed in the first cleavage process is formed in conjunction with... Figure 1 The position corresponding to the second region 120 of the semiconductor laser element 1 shown does not reach the waveguide 21 in the first region 110.

[0095] The second cleaving process is performed after the first cleaving process. The second cleaving process is used to cleave the partition substrate 3, dividing it by cleaving from the cleaving guide groove 4. Specifically, as follows... Figure 6 As shown, multiple semiconductor laser elements 5, each having multiple waveguides 21, are fabricated by sequentially cleaving the partition substrate 3 along each of the multiple cleaving guide grooves 4 formed on the partition substrate 3.

[0096] Specifically, in the second cleaving process, a Teflon blade is pressed into the side (i.e., the reverse side) of the second main surface 12 of the substrate 10 of the segmented substrate 3, at a position opposite to the cleaving guide groove 4. As a result, cleaving occurs starting from the cleaving guide groove 4, and continues along... Figure 6 The [1-100] direction, indicated by the single-dotted line, naturally cuts and divides the substrate 3. This allows the fabrication of a semiconductor laser element 5 having multiple waveguides 21. The semiconductor laser element 5 thus fabricated is a strip-shaped laser element substrate.

[0097] Furthermore, in the second cleaving process, if the debris 3D generated by the laser scribing in the first cleaving process accumulates on the reverse side of the cleaved substrate 3 (the side facing the n-side electrode 40), the debris 3D will become an obstacle when the blade is pressed in. Therefore, as described above, in the first cleaving process, laser scribing is applied to the front side of the semiconductor laminate substrate 2 so that the debris 3D accumulates on the front side of the semiconductor laminate substrate 2 (the side facing the p-side electrode 30).

[0098] Furthermore, when dividing the substrate 3 into multiple semiconductor laser elements 5 by cleaving, the order of cleaving the substrate 3 can be as follows: Figure 6 and Figure 7A The diagram shows sequential partitioning, but it can also be done as follows: Figure 7B The substrate 3 is cleaved by dividing it at the center as shown. The reason for cleaving the substrate 3 in the order of dividing it at the center is that the mechanical force during cleaving is evenly distributed from top to bottom, so the entire substrate 3 can be cleaved better.

[0099] Thus, 3D and 4D debris are deposited on the longer end of the semiconductor laser element 5 fabricated through the cleaving processes (first cleaving process and second cleaving process). Specifically, 3D and 4D debris are deposited on the surface of the substrate 10 of the semiconductor laser element 5 on the side of the first main surface 11. That is, 3D and 4D debris are deposited on the surface (front side) of the p-side electrode 30 of the semiconductor laser element 5.

[0100] Therefore, after the cleaving process (first cleaving process, second cleaving process), in order to remove the 3D and 4D parts of the semiconductor laser element 5 that have accumulated debris, the semiconductor laser element 5 is divided (second division process).

[0101] In the second slitting process, one of the multiple semiconductor laser elements 5 produced by the cleaving process is slid along the Y-axis direction, thereby removing at least one end of the semiconductor laser element 5 in the longer direction.

[0102] In this embodiment, such as Figure 8 As shown, at the end face of the semiconductor laser element 5 along its longer direction, i.e., the end face 3a, a cleavage guide groove 4 remains, and debris 4D accumulated during the formation of the cleavage guide groove 4 exists around the cleavage guide groove 4. Furthermore, at the end face of the semiconductor laser element 5 along the first end face 3a, a laser scribing mark (laser scribing groove) formed by the first dicing process remains, and debris 3D accumulated by this laser scribing exists near the first end face 3a of the semiconductor laser element 5. Thus, at the end face of the semiconductor laser element 5 along the first end face 3a, debris 3D and 4D, the cleavage guide groove 4, and the laser scribing mark exist. Therefore, in the second dicing process, by removing the end face of the semiconductor laser element 5 along the first end face 3a, debris 3D and 4D are removed, and the cleavage guide groove 4 and the laser scribing mark are removed.

[0103] In addition, such as Figure 8 As shown, at the end face 3b of the semiconductor laser element 5 along its longer direction, although the cleavage guide groove 4 is absent, there are residual laser scribing marks formed in the first dicing process, and there is debris 3D accumulated through the laser scribing. Therefore, in the second dicing process, the debris 3D and the laser scribing marks are removed by removing the end face 3b of the semiconductor laser element 5.

[0104] Thus, in this embodiment, not only is the end portion on the first end face 3a side of the semiconductor laser element 5 removed, but the end portion on the second end face 3b side of the semiconductor laser element 5 is also removed. That is, both ends of the semiconductor laser element 5 in the longer direction are removed respectively.

[0105] Specifically, when removing the end portion on the first end face 3a side and the end portion on the second end face 3b side of the semiconductor laser element 5, firstly, as... Figure 8 As shown, a sizing groove 6 is formed on the second main surface 12 side of the substrate 10 of the semiconductor laser element 5 by laser scribing (groove forming process). The sizing groove 6 is a sizing groove used to divide the semiconductor laser element 5.

[0106] In this groove forming process, a dividing groove 6 is formed on the surface (reverse side) of the substrate 10 of the semiconductor laser element 5 on the side of the second main surface 12, extending along the Y-axis direction. In this embodiment, the dividing groove 6 is formed on the semiconductor laser element 5 by laser scribing. Therefore, the dividing groove 6 is a laser scribing groove formed by laser scribing.

[0107] Thus, by forming a dividing groove 6 by laser scribing on the reverse side (the side of the n-side electrode 40) of the semiconductor laser element 5, even if debris 6D is generated by the laser scribing, the debris 6D accumulates on the reverse side of the semiconductor laser element 5 and does not accumulate on the front side (the side of the p-side electrode 30). In this case, as... Figure 8 As shown in the enlarged view, by forming a sizing groove 6 on the semiconductor laser element 5, debris 6D with a width of approximately 30 μm is deposited on both sides of the lateral side of the sizing groove 6 on the opposite side of the semiconductor laser element 5. The debris 6D is processing debris of the semiconductor laser element 5 generated when the sizing groove 6 is formed on the semiconductor laser element 5 by laser scribing. The debris 6D is deposited, for example, on the surface of the n-side electrode 40.

[0108] Furthermore, in this embodiment, the sizing groove 6 does not reach the third side surface 1c and the fourth side surface 1d formed on the semiconductor laser element 5 through the second cleaving process described above. That is, one end of the sizing groove 6 in the Y-axis direction exists at a position that is recessed from the third side surface 1c, and the other end of the sizing groove 6 in the Y-axis direction exists at a position that is recessed from the fourth side surface 1d. With this structure, it is possible to suppress the adhesion of debris generated when the sizing groove 6 is formed by laser scribing to the third side surface 1c and the fourth side surface 1d, which serve as the resonator end face of the semiconductor laser element 5.

[0109] The depth of the segmentation groove 6 formed by laser scribing is about 50 μm from the side (reverse side) of the second main surface 12 of the semiconductor laser element 5. In addition, when viewed from above, the width of the segmentation groove 6 is about 5 μm and the length of the segmentation groove 6 is about 1100 μm.

[0110] Furthermore, in this embodiment, in order to remove both ends of the semiconductor laser element 5 along its longer direction, a dividing groove 6 is formed on each of the ends of the semiconductor laser element 1 on the first end face 3a side and the second end face 3b side. Specifically, the dividing groove 6 on the end face 3a side is formed at a position 600 μm away from the first end face 3a. Furthermore, the dividing groove 6 on the end face 3b side is formed at a position 200 μm away from the second end face 3b.

[0111] exist Figure 9 The image shown is the SEM image after the formation of the segmentation groove 6. Figure 9 This represents the SEM image of the semiconductor laser element 5 with the segmented groove 6 formed and the cross-section of the semiconductor laser element 5 along line A-A. For example... Figure 9 As shown, if a dividing groove 6 with a depth of 50 μm is formed, then around the dividing groove 6, debris 6D with a height of less than 1 μm and a width of 30 μm will accumulate.

[0112] Next, after the segmentation groove 6 is formed in the semiconductor laser element 5 through the groove forming process, the semiconductor laser element 5 is segmented along the segmentation groove 6 to remove the portion including the cleavage guide groove 4.

[0113] Specifically, on the surface (i.e., the front side) of the substrate 10 in the semiconductor laser element 5, a Teflon blade is pressed into the portion corresponding to the position opposite to the dicing groove 6. This cuts the semiconductor laser element 5 along the dicing groove 6. In this embodiment, since dicing grooves 6 are formed at both ends of the semiconductor laser element 1 in its longitudinal direction, thus... Figure 10 As shown, the semiconductor laser element 5 is cut by two dividing grooves 6, and the end 5a on the first end face 3a side and the end 5a on the second end face 3b side of the semiconductor laser element 5 are separated from the semiconductor laser element 5 and removed.

[0114] At this time, since debris 3D and 4D and cleavage guide groove 4 are present at the end 5a on the first end face 3a side of the semiconductor laser element 5, the debris 3D and 4D and cleavage guide groove 4 are removed from the semiconductor laser element 5 by removing the end 5a on the first end face 3a side of the semiconductor laser element 5. Furthermore, since debris 3D is present at the end 5a on the second end face 3b side of the semiconductor laser element 5, the debris 3D is removed from the semiconductor laser element 5 by removing the end 5a on the second end face 3b side of the semiconductor laser element 5. Specifically, all debris 3D and 4D and all cleavage guide groove 4 are removed from the semiconductor laser element 5. In this way, it is possible to manufacture... Figure 1 The semiconductor laser element 1 shown.

[0115] exist Figure 11The image shown is an SEM image of the first side 1a of the semiconductor laser element 1 fabricated in this way. Figure 11 This shows a microscope photograph of the semiconductor laser element 5 after removing the end portion 5a, and of the first side portion 1a of the semiconductor laser element 5 viewed from direction B. (Example) Figure 11 As shown in the microscope image, a portion of a dividing groove 6 remains on the first side 1a of the semiconductor laser element 1. This remaining portion of the dividing groove 6 is... Figure 1 and Figure 2 The step portion 50 of the semiconductor laser element 1 shown.

[0116] Furthermore, after removing the 3D and 4D debris and the cleavage guide groove 4, an end-face coating film is formed on the resonator end face of the semiconductor laser element 1 (end-face coating process). For example, an end-face coating film with a reflectivity of 16% is formed on the front end face, i.e., the third side face 1c, of the semiconductor laser element 1, and an end-face coating film with a reflectivity of 95% or more is formed on the rear end face, i.e., the fourth side face 1d, of the semiconductor laser element 1. A dielectric multilayer film can be used as the end-face coating film.

[0117] [Effects, etc.]

[0118] As described above, the method for manufacturing the semiconductor laser element 1 in this embodiment includes: a first slitting step, in which a substrate 10 having a nitride-based semiconductor laser stack structure 20 having a plurality of waveguides 21 extending in the Y-axis direction (first direction) is slitted along the Y-axis direction to produce a plurality of slitted substrates 3 having a plurality of waveguides 21; a cleaving step, in which one of the plurality of slitted substrates 3 produced by the first slitting step is cleaved along the X-axis direction (second direction) to produce a plurality of semiconductor laser elements 5 having a plurality of waveguides 21; and a second slitting step, in which one of the plurality of semiconductor laser elements 5 produced by the cleaving step is slitted along the Y-axis direction to remove at least one end of the semiconductor laser element 5 in its longer direction (the direction orthogonal to the waveguides 21, i.e., the second direction). Furthermore, the cleaving process includes: a first cleaving process, forming a cleaving guide groove 4 extending in the X-axis direction on the cleaving substrate 3; and a second cleaving process, cleaving the cleaving substrate 3 along the longer direction of the cleaving guide groove 4 (the direction orthogonal to the waveguide 21, i.e., the second direction); in the second cleaving process, the portion including the cleaving guide groove 4 is removed as one end of the longer direction of the semiconductor laser element 5.

[0119] This structure removes scratches at the dividing interface generated during the first dividing process when the substrate 10 is divided into dividing substrates 3, as well as debris 3D accumulated near the dividing interface. Furthermore, the cleavage guide groove 4 (the groove for dividing) formed during the cleaving process when dividing the dividing substrate 3 into semiconductor laser elements 5 can be removed, and the debris 4D accumulated around the cleavage guide groove 4 during its formation can be removed. Thus, a semiconductor laser element 1 without the cleavage guide groove 4 and debris 3D and 4D can be obtained in the mounting area when the semiconductor laser element 1 is mounted to a sub-assembly board, etc. Therefore, the occurrence of defects during the mounting of the semiconductor laser element 1 to the sub-assembly board, etc., can be suppressed.

[0120] Furthermore, in the manufacturing method of the semiconductor laser element 1 in this embodiment, in the first cleaving process of the cleaving process, a cleaving guide groove 4 is formed on the surface (front side) of the first main surface 11 of the substrate 10 of the partition substrate 3.

[0121] This structure allows for the correct alignment of the cleavage guide groove 4 with the shape (i.e., mask pattern) of the nitride-based semiconductor laser stack 20 formed on the first main surface 11 side of the substrate 10. This enables the waveguide 21 to be fabricated with good positional accuracy.

[0122] Furthermore, in the manufacturing method of the semiconductor laser element 1 in this embodiment, in the groove forming process of forming the dividing groove 6 by laser scribing, the dividing groove 6 is formed on the surface (reverse side) on the second main surface 12 side of the semiconductor laser element 5. In the second dividing process, the portion including the cleavage guide groove 4 is removed by dividing the semiconductor laser element 5 along the dividing groove 6.

[0123] In this way, by forming a dividing groove 6 on the reverse side of the semiconductor laser element 5 to remove the cleavage guide groove 4 and debris 3D and 4D, no cleavage guide groove 4 and debris 3D and 4D remain on the front side (the side of the p-side electrode 30) of the semiconductor laser element 1 that serves as the mounting surface. As a result, by mounting the semiconductor laser element 1 with the junction facing downwards and the p-side electrode 30 facing downwards, it is easy to mount the semiconductor laser element 1 to a sub-assembly plate or the like.

[0124] Furthermore, in the manufacturing method of the semiconductor laser element 1 in this embodiment, in the groove forming process, the dividing groove 6 is formed in a manner that extends along the Y-axis direction, and the dividing groove 6 does not reach the third side surface 1c formed on the semiconductor laser element 5 through the second cleaving process.

[0125] This structure can suppress the debris 6D generated when forming the dividing groove 6 by laser scribing from adhering to the resonator end face, i.e., the third side face 1c, of the semiconductor laser element 5.

[0126] Furthermore, if the dividing groove 6 is formed to reach the third side surface 1c of the semiconductor laser element 5, the resin sheet on which the semiconductor laser element 5 is mounted will be cut off when the dividing groove 6 is formed by laser scribing or the like. Due to this cutting, debris flying off the resin sheet may adhere to the third side surface 1c of the semiconductor laser element 5. In contrast, by forming the dividing groove 6 so as in this embodiment that it does not reach the third side surface 1c of the semiconductor laser element 5, it is possible to prevent debris from flying off the resin sheet and to prevent debris flying off the resin sheet from adhering to the third side surface 1c of the semiconductor laser element 5.

[0127] Furthermore, in the manufacturing method of the semiconductor laser element 1 in this embodiment, the dividing groove 6 does not reach the fourth side 1d of the semiconductor laser element 5.

[0128] This structure can suppress the debris 6D generated during the laser scribing process of forming the dividing groove 6 from adhering to the fourth side surface 1d of the semiconductor laser element 5, which serves as the resonator end face. Furthermore, it can also prevent debris flying from the resin sheet on which the semiconductor laser element 5 is mounted during the laser scribing process of forming the dividing groove 6 from adhering to the fourth side surface 1d of the semiconductor laser element 5.

[0129] Furthermore, according to the manufacturing method of the semiconductor laser element 1 in this embodiment, since the first side 1a and the second side 1b of the semiconductor laser element 1 can be formed at any position by the dividing groove 6, the distance between the waveguide 21 and the first side 1a or the second side 1b of the semiconductor laser element 1 can be set arbitrarily and correctly.

[0130] In this case, in the semiconductor laser element 1 manufactured by the manufacturing method of the semiconductor laser element 1 of the embodiment, if the shortest interval between two adjacent waveguides 21 is defined as the first interval d1, and the interval between the waveguide 21 closest to the first side 1a and the first side 1a is defined as the second interval d2, then the second interval d2 is wider than the first interval d1.

[0131] This structure enables the creation of a semiconductor laser element 1 with excellent heat dissipation characteristics. For this purpose, [the following is used]... Figure 12A and Figure 12B The comparison will be made with the semiconductor laser element 1X of the comparative example. Figure 12A This diagram shows the state in which the comparative example semiconductor laser element 1X is mounted on the heat sink with the junction facing downwards. Figure 12B This diagram shows the state in which the semiconductor laser element 1 of the embodiment is mounted to the heat sink with the junction facing downwards. Additionally, in Figure 12A and Figure 12B In the diagram, the circle enclosed by the dashed line represents the heat diffusion centered on the emitter corresponding to waveguide 21.

[0132] like Figure 12A As shown, in the comparative example semiconductor laser element 1X, since the distance between the waveguide 21 closest to the side and the side is narrower than the spacing between the waveguides 21, when the semiconductor laser element 1X is mounted on the sub-assembly plate serving as a heat sink with the junction facing downwards, the heat dissipation path of the waveguide 21 closest to the side in the longer direction becomes narrower compared to the other waveguides 21. That is, if the waveguide 21 located at the very end is too close to the side in the longer direction of the semiconductor laser element 1X, the heat dissipation path of the waveguide 21 located at the very end is restricted. As a result, the waveguide 21 closest to the side in the longer direction is more prone to aging compared to the other waveguides 21, becoming a cause of overall performance degradation of the semiconductor laser element 1X.

[0133] In contrast, in the semiconductor laser element 1 of this embodiment, the second interval d2 is wider than the first interval d1. That is, the distance between the waveguide 21 closest to the first side surface 1a and the first side surface 1a is wider than the spacing between the waveguides 21. Therefore, as... Figure 12B As shown, when the semiconductor laser element 1 of this embodiment is mounted to the sub-assembly plate serving as a heat sink with its junction facing downwards, the waveguide 21 closest to the first side 1a is farther away from the first side 1a than other waveguides 21, thus ensuring a sufficiently wide heat dissipation path. Therefore, a semiconductor laser element 1 with excellent overall heat dissipation characteristics can be obtained, and adverse conditions occurring during mounting to the sub-assembly plate or the like can be suppressed. In particular, adverse conditions when the semiconductor laser element 1 is mounted with its junction facing downwards can be suppressed.

[0134] Furthermore, in the semiconductor laser element 1 of this embodiment, if the distance between the waveguide 21 closest to the second side 1b and the second side 1b is set as the third distance d3, then the third distance d3 is also wider than the first distance d1.

[0135] Therefore, the waveguides 21 at both ends of the semiconductor laser element 1 along its longer direction can ensure a sufficiently wide heat dissipation path. As a result, a semiconductor laser element 1 with better overall heat dissipation characteristics can be obtained.

[0136] [Modification of semiconductor laser element]

[0137] In the above embodiment, the n-side electrode 40 is formed entirely on the reverse side of the semiconductor laser element 1. The second region 120 and the third region 130 are regions that do not function as semiconductor lasers because waveguides 21 are not formed in them, but this is not a limitation. For example, such as... Figure 13As shown, the second region 120 and the third region 130 can also become regions that do not function as semiconductor lasers by not forming the n-side electrode 40 in the second region 120 and the third region 130. Figure 13 This is a diagram showing the structure of a modified semiconductor laser element 5A (1A).

[0138] In this case, the semiconductor laser element 5A (1A) of this modified example can be manufactured by the same method as the semiconductor laser element 5 (1) of the above embodiment. In this case, in this modified example, as in the above embodiment, in the groove forming process, the dividing groove 6 is formed on the reverse side instead of the front side of the semiconductor laser element 5A, so the debris 6D generated when forming the dividing groove 6 by laser scribing does not exist on the front side of the semiconductor laser element 5A.

[0139] However, since the sizing groove 6 is formed on the reverse side of the semiconductor laser element 5A, the debris 6D generated during the formation of the sizing groove 6 accumulates on the reverse side of the semiconductor laser element 5A (the side of the second main surface 12). Specifically, the debris 6D accumulates around the sizing groove 6, that is, on the second main surface 12 of the substrate 10 near the first side surface 1a and the second side surface 1b, where the second region 120 and the third region 130 of the n-side electrode 40 are not formed.

[0140] Therefore, in the semiconductor laser element 5A (1A) of this modified example, the thickness of the n-side electrode 40 formed on the inner side of the region where the debris 6D is deposited is greater than the height of the debris 6D. As an example, the maximum height of the debris 6D is 1 μm, so the thickness of the n-side electrode 40 is 1 μm or more, and more preferably 2 μm or more.

[0141] In this case, the n-side electrode 40 is preferably positioned at a location that is sufficiently separated from the dividing groove 6 and the debris 6D (for example, at a location that is more than 30 μm away from the dividing groove 6). This can suppress the accumulation of debris 6D on the surface of the n-side electrode 40.

[0142] In this way, by forming the n-side electrode 40 away from the location where the debris 6D accumulates, and by making the thickness of the n-side electrode 40 greater than the height of the debris 6D, when it is desired to improve heat dissipation by connecting the n-side electrode 40 side to a heat sink or the like, it is possible to suppress the debris 6D accumulated on the reverse side of the semiconductor laser element 1A from becoming an obstacle.

[0143] [Semiconductor laser device]

[0144] Next, the semiconductor laser device using the semiconductor laser element 1 of the embodiment will be described.

[0145] First, use Figure 14The first semiconductor laser device 200 having the semiconductor laser element 1 of the embodiment will be described. Figure 14 This is a diagram showing the structure of the first semiconductor laser device 200 according to the embodiment.

[0146] like Figure 14 As shown, the first semiconductor laser device 200 of this embodiment includes the semiconductor laser element 1 described above and a sub-assembly plate 210 for mounting the semiconductor laser element 1.

[0147] The sub-assembly plate 210 includes a substrate 211 and an electrode layer 212 stacked on the upper surface of the substrate 211. The substrate 211 is preferably made of a material with high thermal conductivity and a low coefficient of thermal expansion. For example, SiC ceramic, AlN ceramic, semi-insulating SiC crystal, or synthetic diamond can be used as the raw material for the substrate 211. Furthermore, metallic materials such as Cu-W alloy or Cu-Mo alloy can also be used as the substrate 211. The electrode layer 212 is, for example, composed of Ti / Pt / Au sequentially from the substrate 211 side.

[0148] In this embodiment, the semiconductor laser element 1 is mounted on the sub-assembly plate 210 with the second main surface 12 side of the substrate 10 facing the sub-assembly plate 210. That is, the semiconductor laser element 1 is configured with the p-side electrode 30 formed on the front side facing the sub-assembly plate 210 and is mounted on the sub-assembly plate 210 with the junction facing downward.

[0149] Furthermore, the semiconductor laser element 1 is mounted on the sub-assembly plate 210 via the bonding layer 220. In this embodiment, the semiconductor laser element 1 is electrically connected to the electrode layer 212 of the sub-assembly plate 210. Therefore, a metal bonding material such as AuSn solder is used as the bonding layer 220.

[0150] Thus, according to the first semiconductor laser device 200, since the semiconductor laser element 1 described above is used, the semiconductor laser element 1 can be installed onto the sub-assembly plate 210 without any adverse conditions during installation.

[0151] Next, use Figure 15 The second semiconductor laser device 201 having the semiconductor laser element 1 of the embodiment will be described. Figure 15 This is a diagram showing the structure of the second semiconductor laser device 201 according to the embodiment.

[0152] like Figure 15 As shown, the second semiconductor laser device 201 of this embodiment includes the semiconductor laser element 1 described above, a sub-assembly plate 210 for mounting the semiconductor laser element 1, and a heat sink 230. That is, the second semiconductor laser device 201 is configured to... Figure 14 The first semiconductor laser device 200 shown further includes a heat sink 230.

[0153] Specifically, the sub-assembly plate 210, on which the semiconductor laser element 1 is mounted, is placed onto the heat sink 230 via a heat sink mounting process. The heat sink 230 can be, for example, a water-cooled heat sink made of Cu. The sub-assembly plate 210, on which the semiconductor laser element 1 is mounted, is bonded to the upper surface of the heat sink 230, for example, using a bonding member 240. The bonding member 240 can be, for example, a conductive bonding material with high thermal conductivity, such as SnAgCu solder (SAC solder).

[0154] Furthermore, the second semiconductor laser device 201 of this embodiment uses the heat sink 230 as the positive electrode and also includes a negative electrode 260, a first metal line 270 and a second metal line 280 disposed on the heat sink 230 with the insulating layer 250 in between.

[0155] Specifically, the electrode layer 212 and heat sink 230 of the sub-assembly board 210 are connected by multiple first metal wires 270 through a wire bonding process. Furthermore, the n-side electrode 40 and negative electrode 260 of the semiconductor laser element 1 are connected by multiple second metal wires 280. For example, gold wires can be used as the first metal wires 270 and the second metal wires 280. Furthermore, a Cu block can be used as the negative electrode 260. Additionally, if the substrate 211 of the sub-assembly board 210 is made of metal or the like and is conductive, the first metal wires 270 are not required.

[0156] Thus, according to the second semiconductor laser device 201, since the semiconductor laser element 1 is thermally connected to the heat sink 230, the heat generated by the semiconductor laser element 1 can be dissipated efficiently. As a result, a semiconductor laser device capable of high-output operation can be realized.

[0157] Next, use Figure 16 The third semiconductor laser device 202 having the semiconductor laser element 1 of the embodiment will be described. Figure 16 This is a diagram showing the structure of the third semiconductor laser device 202 according to the embodiment.

[0158] like Figure 16 As shown, the third semiconductor laser device 202 of this embodiment includes multiple Figure 15 The second semiconductor laser device 201 is shown. Specifically, the third semiconductor laser device 202 can be fabricated by stacking the second semiconductor laser device 201 with a heat sink 230 through a stacking process. In this case, the heat sink 230 (positive electrode) of the upper second semiconductor laser device 201 is electrically connected to the negative electrode 260 of the lower second semiconductor laser device 201. That is, the two semiconductor laser elements 1 of the upper and lower second semiconductor laser devices 201 are electrically connected in series.

[0159] Furthermore, in this embodiment, two second semiconductor laser devices 201 are stacked, but this is not a limitation. For example, three or more second semiconductor laser devices 201 may be stacked. That is, the second semiconductor laser devices 201 may be stacked sequentially.

[0160] Thus, according to the third semiconductor laser device 202, due to the use of multiple Figure 15 The second semiconductor laser device 201 shown can easily obtain a large light output.

[0161] Next, use Figure 17 The fourth semiconductor laser device 203 having the semiconductor laser element 1 of the embodiment will be described. Figure 17 This is a diagram showing the structure of the fourth semiconductor laser device 203 according to the embodiment.

[0162] like Figure 17 As shown, the fourth semiconductor laser device 203 in this embodiment becomes... Figure 15 The second semiconductor laser device 201 shown uses a heat sink 290 with an electrode layer 291 instead of the second metal line 280.

[0163] The heat sink 290 functions as a heat sink. Therefore, the heat sink 290 is preferably made of a material with high thermal conductivity. An electrode layer 291 is formed on the surface of the heat sink 290. The electrode layer 291 is, for example, an Au layer. The electrode layer 291 is electrically connected to the n-side electrode 40 of the semiconductor laser element 1 via a conductive bonding material such as AuSn solder. Furthermore, the electrode layer 291 and the negative electrode 260 are electrically connected via solder bumps. By using solder bumps, not only can the electrode layer 291 be electrically bonded to the negative electrode 260, but the height difference between the heat sink 290 and the negative electrode 260 can also be absorbed.

[0164] Thus, according to the fourth semiconductor laser device 203, and Figure 15 Compared to the second semiconductor laser device 201 shown, a heat dissipation path for the heat generated by the semiconductor laser element 1 is added via the heat sink 290. This enables a semiconductor laser device capable of higher output operation.

[0165] In addition, regarding Figure 1 The semiconductor laser element 1 shown has a problem where debris 6D accumulates on the n-side electrode 40 during the formation of the sizing groove 6 by laser scribing. This debris 6D can potentially become an obstacle when joining the heat sink 290. Therefore, in the fourth semiconductor laser device 203, compared to the device using… Figure 1 Compared to the semiconductor laser element 1 shown, it is preferable to use an n-side electrode 40 that is thicker than the height of the debris 6D at a location far from the location where the debris 6D accumulates. Figure 13The semiconductor laser element 1A shown is shown.

[0166] (Modified Example)

[0167] The above describes the manufacturing method, semiconductor laser element, and semiconductor laser device of the present disclosure based on the embodiments, but the present disclosure is not limited to the above embodiments.

[0168] For example, in the above embodiment, in a semiconductor laser element 1 with a width of 9200 μm in the longer direction and a length of 1200 μm in the resonator length direction, 21 waveguides 21 with a width of 30 μm are formed at intervals of 400 μm, but this is not a limitation. Specifically, in a semiconductor laser with a width of 9200 μm in the longer direction and a length of 1200 μm in the resonator length direction, 37 waveguides 21 with a width of 30 μm can also be formed at intervals of 225 μm (=d1). In this case, the second interval d2 and the third interval d3 are, for example, d2=d3=550 μm.

[0169] Alternatively, in a semiconductor laser with a width of 9200 μm in the longer direction and a length of 1200 μm in the resonator length direction, 56 waveguides 21 with a width of 30 μm can be formed at intervals of 150 μm (=d1). In this case, the second interval d2 and the third interval d3 are, for example, d2=d3=475 μm.

[0170] Furthermore, the spacing and width of the multiple waveguides 21 may not all be the same. The width and configuration of each waveguide are determined based on the design of the semiconductor laser element's output and the heat dissipation circuit.

[0171] Furthermore, in the above embodiment, the second region 120 and the third region 130 are regions that do not function as semiconductor lasers by not forming waveguides 21 in the second region 120 and the third region 130, but this is not a limitation. For example, even if p-side electrodes 30 and waveguides 21 are formed in the second region 120 and the third region 130, the p-side electrodes 30 and waveguides 21 are separated by an insulating film so that they are not electrically connected, thereby making the second region 120 and the third region 130 regions that do not function as semiconductor lasers.

[0172] Furthermore, in the above embodiment, the waveguide 21 of the semiconductor laser element 1 has a stripe structure, but it is not limited to this. For example, the waveguide 21 may not have stripes, but may be an electrode strip structure consisting only of segmented electrodes, or it may be a current-narrowing structure using a current-blocking layer, etc.

[0173] Furthermore, in the above embodiments, the direction orthogonal to the waveguide 21 was described as the longer direction for the semiconductor laser element 1. However, when the number of waveguides is small, the direction parallel to the length of the laser resonator may be the longer direction. For example, it is possible to form a semiconductor laser element 1 with two waveguides 21 formed at 150 μm intervals (=d1), each waveguide 21 having a length of 1200 μm in the resonator length direction, and the second interval d2 and the third interval d3 on the outer side of each of the two waveguides 21 being 475 μm. In this case, the length of the resonator in the length direction, 1200 μm, is greater than the width of the semiconductor laser element, 1100 μm (475 μm + 150 μm + 475 μm).

[0174] Furthermore, provided that the waveguides 21 of the semiconductor laser element 1 are appropriately spaced and have a heat sink and cooling mechanism with good heat dissipation, the total optical output of the semiconductor laser element 1 can be close to the value obtained by multiplying the optical output that can be extracted from one waveguide 21 by the number of waveguides. For example, in a semiconductor laser element with a maximum of 60 or fewer waveguides, it is possible to achieve 60W or more but less than 300W in the case of semiconductor lasers with wavelengths of 365nm to 390nm, 180W or more but less than 600W in the case of wavelengths of 390nm to 420nm, 360W or more but less than 900W in the case of wavelengths of 420nm to 460nm, and 180W or more but less than 900W in the case of wavelengths of 460nm to 500nm.

[0175] Furthermore, in the semiconductor laser element 1 of the above embodiment, a case using a nitride-based semiconductor material is illustrated, but it is not limited to this. For example, it is also possible to apply it to a case using a semiconductor material other than a nitride-based semiconductor material. In this case, the semiconductor laser element 1 is not a nitride-based semiconductor laser stack structure 20, but a semiconductor laser stack structure using other semiconductor materials.

[0176] Furthermore, in the above embodiment, the case of manufacturing a semiconductor laser element as a laser strip having multiple waveguides 21 was described. However, it is also possible to further divide the semiconductor laser element 1, which is a laser strip having multiple waveguides 21, into multiple parts and monolithize them to manufacture a semiconductor laser element with a single emitter having one waveguide 21.

[0177] In addition, this disclosure also includes forms obtained by applying various modifications to the embodiments that can be conceived by those skilled in the art, or forms achieved by arbitrarily combining the constituent elements and functions of each embodiment without departing from the spirit of this disclosure.

[0178] Industrial applicability

[0179] The semiconductor laser element disclosed herein is useful for a wide variety of applications, such as light sources for image display devices like projectors or displays, light sources for vehicle headlights, light sources for lighting devices, or light sources for various industrial equipment such as laser welding equipment, thin film annealing equipment, and laser processing equipment.

[0180] Label Explanation

[0181] 1, 1A, 5, 5A semiconductor laser elements

[0182] 1a First side view

[0183] 1b Second side view

[0184] 1c Third side

[0185] 1d Fourth side

[0186] 2 Semiconductor laminated substrate

[0187] 2a PCM area

[0188] 3 Divide the substrate

[0189] 3D, 4D, 6D debris

[0190] 3a First end face

[0191] 3b Second end face

[0192] 4. Cleavage guide groove

[0193] 5a end

[0194] 6 dividing slots

[0195] 10 substrate

[0196] 11 Main side 1

[0197] 12 2nd main side

[0198] 20 Nitride-based semiconductor laser stacked structure

[0199] 21 waveguide

[0200] 30 p side electrode

[0201] 40 n-side electrode

[0202] 50th order difference part

[0203] 110 Area 1

[0204] 120 Area 2

[0205] 130 Area 3

[0206] 200 First Semiconductor Laser Device

[0207] 201 Second Semiconductor Laser Device

[0208] 202 Third Semiconductor Laser Device

[0209] 203 Fourth Semiconductor Laser Device

[0210] 210 Sub-assembly panel

[0211] 211 matrix

[0212] 212 Electrode Layer

[0213] 220 bonding layer

[0214] 230 heat sink

[0215] 240 joint

[0216] 250 insulation layer

[0217] 260 Negative electrode

[0218] 270 First Metal Wire

[0219] 280 Second Metal Wire

[0220] 290 heatsink

[0221] 291 Electrode Layer

Claims

1. A manufacturing method of a semiconductor laser element, which is a manufacturing method of a semiconductor laser element having a plurality of waveguides, characterized in that: including: a first splitting process of splitting a substrate on which a nitride semiconductor laser laminated structure having a plurality of the waveguides is formed along a first direction, thereby manufacturing a plurality of split substrates each having a plurality of the waveguides provided at intervals in a second direction orthogonal to the first direction and parallel to a first main surface, and the plurality of the waveguides of which extend in the first direction parallel to the first main surface; a cleavage process of cleaving one of the plurality of split substrates manufactured by the first splitting process along the second direction, thereby manufacturing a plurality of semiconductor laser elements each having a plurality of the waveguides; and a second splitting process of splitting one of the plurality of semiconductor laser elements manufactured by the cleavage process along the first direction, thereby removing at least one end portion of the semiconductor laser element in the second direction; the cleavage process includes a first cleavage process of forming a cleavage introduction groove extending in the second direction on the split substrate, and a second cleavage process of cleaving the split substrate along the second direction in the cleavage introduction groove; in the second splitting process, a portion including the cleavage introduction groove is removed as one end portion of the semiconductor laser element in the second direction.

2. A manufacturing method of a semiconductor laser element, which is a manufacturing method of a semiconductor laser element having a plurality of waveguides, characterized in that: including: a first splitting process of splitting a substrate on which a nitride semiconductor laser laminated structure having a plurality of the waveguides is formed along a first direction, thereby manufacturing a plurality of split substrates each having a plurality of the waveguides provided at intervals in a second direction orthogonal to the first direction and parallel to a first main surface, and the plurality of the waveguides of which extend in the first direction parallel to the first main surface; a cleavage process of cleaving one of the plurality of split substrates manufactured by the first splitting process along a second direction parallel to the first main surface and orthogonal to the first direction, thereby manufacturing a plurality of semiconductor laser elements each having a plurality of the waveguides; and a second splitting process of splitting one of the plurality of semiconductor laser elements manufactured by the cleavage process along the first direction, thereby removing at least one end portion of the semiconductor laser element in the second direction; the semiconductor laser element has a first side surface parallel to the first direction and a second side surface opposite to the first side surface; in the semiconductor laser element, a shortest interval in intervals between two adjacent waveguides is defined as a first interval, and an interval between the waveguide closest to the first side surface among the plurality of waveguides and the first side surface is defined as a second interval, and the second interval is wider than the first interval.

3. The manufacturing method of a semiconductor laser element according to claim 2, characterized in that: The aforementioned semiconductor laser element has a first region and a second region. The first region is a region in which a plurality of waveguides are formed, and the second region is a region sandwiched between the first region and the first side and having the second interval. The second region mentioned above is the region that does not function as a semiconductor laser.

4. The method for manufacturing a semiconductor laser element as described in claim 3, characterized in that, In the aforementioned semiconductor laser element, the distance between the waveguide closest to the second side and the second side is defined as the third distance, which is wider than the first distance.

5. The method for manufacturing a semiconductor laser element as described in claim 1, characterized in that, The aforementioned semiconductor laser element has a first side surface parallel to the first direction and a second side surface opposite to the first side surface; In the aforementioned semiconductor laser element, the shortest interval between two adjacent waveguides is defined as the first interval, and the interval between the waveguide closest to the first side and the first side is defined as the second interval, wherein the second interval is wider than the first interval. In the aforementioned semiconductor laser element, the distance between the waveguide closest to the second side and the second side is defined as the third distance, which is wider than the first distance.

6. The method for manufacturing a semiconductor laser element as described in claim 4, characterized in that, The aforementioned semiconductor laser element has a third region, which is a region sandwiched between the aforementioned first region and the aforementioned second side and having the aforementioned third interval; The third region mentioned above is the region that does not function as a semiconductor laser.

7. The method for manufacturing a semiconductor laser element as described in claim 2, characterized in that, The cleaving process includes a first cleaving process in which a cleaving guide groove extending in the second direction is formed in the second region, and a second cleaving process in which the cleaving substrate is cleaved along the second direction of the cleaving guide groove.

8. The method for manufacturing a semiconductor laser element as described in claim 7, characterized in that, The aforementioned cleavage guide groove did not reach the waveguide closest to the first side among the multiple waveguides in the first region.

9. The method for manufacturing a semiconductor laser element as described in claim 1, characterized in that, The aforementioned cleavage inlet groove is formed by laser scribing.

10. The method for manufacturing a semiconductor laser element as described in claim 7 or 8, characterized in that, The aforementioned cleavage inlet groove is formed by laser scribing.

11. The method for manufacturing a semiconductor laser element as described in claim 1, characterized in that, The flatness of the third side surface of the semiconductor laser element formed by the second cleaving process, which is parallel to the second direction, is higher than the flatness of the first side surface of the semiconductor laser element formed by the first slitting process, which is parallel to the first direction, and the flatness of the second side surface opposite to the first side surface.

12. The method for manufacturing a semiconductor laser element as described in claim 7 or 8, characterized in that, The flatness of the third side surface of the semiconductor laser element formed by the second cleaving process, which is parallel to the second direction, is higher than the flatness of the first side surface of the semiconductor laser element formed by the first slitting process, which is parallel to the first direction, and the flatness of the second side surface opposite to the first side surface.

13. The method for manufacturing a semiconductor laser element as described in claim 1, characterized in that, The substrate has a first main surface on which the above-mentioned nitride-based semiconductor laser stack structure is formed, and a second main surface on the opposite side of the first main surface; The manufacturing method of the semiconductor laser element includes a groove forming process in which a dividing groove is formed on the surface of the semiconductor laser element on the second main surface side by laser scribing. In the second slitting process described above, the semiconductor laser element is slid along the slitting groove, thereby removing the portion including the cleavage guide groove.

14. The method for manufacturing a semiconductor laser element as described in claim 7 or 8, characterized in that, The substrate has a first main surface on which the above-mentioned nitride-based semiconductor laser stack structure is formed, and a second main surface on the opposite side of the first main surface; The manufacturing method of the semiconductor laser element includes a groove forming process in which a dividing groove is formed on the surface of the semiconductor laser element on the second main surface side by laser scribing. In the second slitting process described above, the semiconductor laser element is slid along the slitting groove, thereby removing the portion including the cleavage guide groove.

15. The method for manufacturing a semiconductor laser element as described in claim 13, characterized in that, In the above-mentioned groove forming process, the dividing groove is formed in a manner that extends along the first direction. The aforementioned dividing groove does not reach the third side of the semiconductor laser element that is parallel to the aforementioned second direction, which is formed through the aforementioned second cleaving process.

16. The method for manufacturing a semiconductor laser element as described in claim 13 or 15, characterized in that, In the above-mentioned groove forming process, the debris generated by the laser scribing during the formation of the above-mentioned dividing groove accumulates on the surface of the second main surface of the above-mentioned semiconductor laser element. The aforementioned semiconductor laser element has electrodes formed in a portion inside the region where the aforementioned debris has accumulated; The thickness of the aforementioned electrode is greater than the height of the aforementioned debris.

17. The method for manufacturing a semiconductor laser element as described in claim 1, characterized in that, In the first dicing process described above, the substrate having the aforementioned nitride-based semiconductor laser stacked structure is diced by laser scribing.

18. The method for manufacturing a semiconductor laser element as described in claim 7 or 8, characterized in that, In the first dicing process described above, the substrate having the aforementioned nitride-based semiconductor laser stacked structure is diced by laser scribing.

19. A semiconductor laser element, manufactured by the method for manufacturing a semiconductor laser element according to claim 1, characterized in that, have: The substrate has a first main surface and a second main surface opposite to the first main surface; and A nitride-based semiconductor laser stack structure is formed above the first main surface of the substrate and has a plurality of waveguides extending in a first direction parallel to the first main surface. The semiconductor laser element described above has a first side surface orthogonal to the first main surface and parallel to the first direction, a second side surface opposite to the first side surface, and a third side surface orthogonal to the first main surface and orthogonal to the first direction; The aforementioned semiconductor laser element has a first region and a second region, wherein the first region is a region in which a plurality of waveguides are formed, and the second region is a region sandwiched between the first region and the first side surface; When the semiconductor laser element is viewed from the first direction, a stepped portion is formed on the first side surface that is recessed inward from the second main surface side of the semiconductor laser element.

20. The semiconductor laser element as claimed in claim 19, characterized in that, The aforementioned step difference section did not reach the aforementioned third side surface.

21. A semiconductor laser element, manufactured by the method for manufacturing a semiconductor laser element according to claim 1, characterized in that, have: The substrate has a first main surface and a second main surface opposite to the first main surface; and A nitride-based semiconductor laser stack structure is formed above the first main surface of the substrate and has a plurality of waveguides extending in a first direction parallel to the first main surface. The semiconductor laser element described above has a first side surface orthogonal to the first main surface and parallel to the first direction, a second side surface opposite to the first side surface, and a third side surface orthogonal to the first main surface and orthogonal to the first direction; The aforementioned semiconductor laser element has a first region and a second region, wherein the first region is a region in which a plurality of waveguides are formed, and the second region is a region sandwiched between the first region and the first side surface; Let the shortest interval between two adjacent waveguides be the first interval, and let the interval between the waveguide closest to the first side and the first side be the second interval, wherein the second interval is wider than the first interval.

22. The semiconductor laser element as claimed in claim 21, characterized in that, The aforementioned semiconductor laser element has a third region sandwiched between the first region and the second side surface; Let the distance between the waveguide closest to the second side and the second side be the third distance, and the third distance is wider than the first distance.

23. The semiconductor laser element as described in claim 19 or 20, characterized in that, The third lateral surface mentioned above is a cleavage surface; The flatness of the third side is higher than that of the first side and the second side.

24. The semiconductor laser element as described in claim 21 or 22, characterized in that, The third lateral surface mentioned above is a cleavage surface; The flatness of the third side is higher than that of the first side and the second side.

25. The semiconductor laser element as described in claim 19 or 20, characterized in that, On the second main surface side mentioned above, an electrode is formed in the portion inside the area where debris is accumulated; The thickness of the aforementioned electrode is greater than the height of the aforementioned debris.

26. The semiconductor laser element as described in claim 21 or 22, characterized in that, On the second main surface side mentioned above, an electrode is formed in the portion inside the area where debris is accumulated; The thickness of the aforementioned electrode is greater than the height of the aforementioned debris.

27. A semiconductor laser device, characterized in that, have: The semiconductor laser element according to any one of claims 19 to 26; and Sub-assembly board, on which the aforementioned semiconductor laser components are mounted; The aforementioned semiconductor laser element is mounted on the sub-assembly plate such that the first main surface faces the sub-assembly plate.

28. The semiconductor laser device as claimed in claim 27, characterized in that, It also has a heat sink; The aforementioned sub-assembly plate is positioned on top of the aforementioned heat sink.

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