Optical proximity correction method and device, electronic equipment and storage medium

By segmenting and screening the non-fixed edges of the target through-hole pattern and performing optical proximity effect correction based on the segmented edges that meet the distance conditions, the problem of insufficient OPC correction accuracy is solved, and the accuracy of the simulation results and the yield of circuit production are improved.

CN115933304BActive Publication Date: 2025-10-10SHANGHAI INTEGRATED CIRCUIT EQUIPMENT & MATERIALS INDUSTRY INNOVATION CENTER CO LTD
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Patent Information

Application Number
CN202211711745.X
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2022-12-29
Publication Date
2025-10-10
Estimated Expiration
2042-12-29

AI Technical Summary

Technical Problem

In deep submicron integrated circuit manufacturing, the accuracy of optical proximity correction (OPC) is limited by the mask production capability and the number of iterations, resulting in large errors between the simulation results and the target pattern. This makes it difficult to meet the accuracy requirements, especially when the pattern density is high.

Method used

By obtaining the non-fixed edges of the target through-hole pattern for segmentation, the segmented edges that meet the distance conditions are screened out, and optical proximity effect correction is performed based on these edges to reduce the pattern edge movement error and improve the OPC correction accuracy.

Benefits of technology

The error between the simulation pattern and the target through-hole pattern is reduced, the process window is improved, and the circuit performance and product yield are improved.

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Abstract

The application provides an optical proximity correction method, device, electronic equipment and storage medium. The method comprises the following steps: segmenting a non-fixed side of a target via hole pattern according to a preset segmentation value and a known segmentation side length to obtain a plurality of segmentation sides; screening out a target segmentation side meeting a distance condition from the plurality of segmentation sides; and obtaining a simulation pattern based on the target segmentation side after optical proximity correction, and completing the correction when an error between the simulation pattern and the target via hole pattern is within a preset range. The method can solve the problem of how to make the error between the final simulation result and the target pattern smaller and improve the correction accuracy of the OPC.
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Description

Technical Field

[0001] The present application relates to a technology for optical correction of microelectronic layout data, and in particular to a method, device, electronic device, and storage medium for correcting optical proximity effects. Background Art

[0002] In deep-submicron integrated circuit manufacturing, model-based optical proximity correction (OPC) has been widely used in various lithography processes. Starting from the 180nm technology node, where the minimum line width on the device is smaller than the exposure wavelength, OPC has become essential and a key step in mask pattern processing.

[0003] However, in the actual correction process, due to the limitations of mask production capabilities, the OPC correction graphic segments must reach a certain size, which will affect the accuracy of the OPC correction to a certain extent, especially in the case of complex graphic structures. In addition, considering the publication cycle, a reasonable number of OPC iterations must be used, which will also affect the accuracy of the final result. Although the OPC software can automatically adjust the layout based on the error between the simulation results and the target graphics, in the case of high graphic density, the mutual influence between graphics often makes this layout correction more difficult. The slightest local change of each graphic may affect the imaging results of adjacent graphics. Therefore, even after multiple iterative processes, there are still cases where some graphics or parts of graphics cannot achieve the target.

[0004] How to make the error between the final simulation result and the target graphics smaller and improve the correction accuracy of OPC still needs to be considered. Summary of the Invention

[0005] The present application provides an optical proximity effect correction method, device, electronic device, and storage medium to solve the problem of how to reduce the error between the final simulation result and the target pattern and improve the OPC correction accuracy.

[0006] In one aspect, the present application provides a method for correcting an optical proximity effect, comprising:

[0007] Obtain a target through-hole pattern, and segment a non-fixed edge of the target through-hole pattern according to a preset segmentation value and a known segment edge length to obtain a plurality of segment edges, wherein the target through-hole pattern is rectangular and includes fixed edges and non-fixed edges;

[0008] screening a target segment edge meeting a distance condition from the plurality of segment edges, the distance condition including at least two conditions: a first condition that a distance between the target via pattern and each pattern adjacent to the target via pattern in two directions perpendicular to each other in a planar pattern composed of the target via pattern and the sub-resolution assist pattern is less than a first preset distance; and a second condition that a distance between the segment edge and a projection pattern including a projection pattern of the sub-resolution assist pattern is less than a second preset distance;

[0009] obtaining a simulation pattern after performing the optical proximity correction based on the target segment edge, and completing the correction when an error between the simulation pattern and the target via pattern is within a preset range.

[0010] In one embodiment, the first preset distance and the second preset distance are determined according to a length of the segment edge.

[0011] The first preset distance is greater than the length of the segment edge, and the second preset distance is less than the length of the segment edge.

[0012] In one embodiment, obtaining the simulation pattern after performing the optical proximity correction based on the target segment edge includes:

[0013] obtaining a moving direction and a moving distance of the target segment edge;

[0014] moving the target segment edge according to the moving direction and the moving distance;

[0015] obtaining a simulation pattern after performing the optical proximity correction based on the target segment edge.

[0016] In one embodiment, obtaining the moving direction and the moving distance of the target segment edge includes:

[0017] taking a direction perpendicular to the target segment edge and toward an outside of the target via pattern as the moving direction;

[0018] determining the moving distance according to a length of the target segment edge and a preset mask rule value.

[0019] In one embodiment, determining the moving distance according to the length of the target segment edge and the preset mask rule value includes:

[0020] obtaining a ratio between the length of the target segment edge and the preset mask rule value;

[0021] performing an integer processing on the ratio to obtain the moving distance.

[0022] In one embodiment, obtaining the simulation pattern after performing the optical proximity correction based on the target segment edge includes:

[0023] The reconstructed graphics formed by the moved target segment edges are corrected based on the optical proximity effect correction model to obtain a simulated graphics.

[0024] In one embodiment, the method further comprises:

[0025] When the error between the simulation pattern and the target through-hole pattern is outside the preset range, return to the step of screening out the target segmented edges that meet the distance condition from the multiple segmented edges until the error between the simulation pattern and the target through-hole pattern is within the preset range, and the correction is completed.

[0026] In another aspect, the present application provides an optical proximity effect correction device, comprising:

[0027] an acquisition module, configured to acquire a target through-hole pattern, segment the non-fixed edge of the target through-hole pattern according to a preset segmentation value and a known segment edge length to obtain a plurality of segment edges, wherein the target through-hole pattern is rectangular and includes fixed edges and non-fixed edges;

[0028] a screening module, configured to screen out target segmented edges from the plurality of segmented edges that meet distance conditions, the distance conditions comprising at least two of the following conditions: a first condition that, in a plane pattern composed of the target through-hole pattern and the sub-resolution auxiliary pattern, the distance between the target through-hole pattern and each adjacent pattern in two mutually perpendicular directions is less than a first preset distance; a second condition that the distance between the segmented edge and a projected pattern is less than a second preset distance, the projected pattern including the projected pattern of the sub-resolution auxiliary pattern;

[0029] The correction module is used to obtain a simulation pattern after performing optical proximity effect correction based on the target segmented edge, and complete the correction when the error between the simulation pattern and the target through-hole pattern is within a preset range.

[0030] On the other hand, the present application provides an electronic device, comprising: a processor, and a memory communicatively connected to the processor;

[0031] The memory stores computer-executable instructions;

[0032] The processor executes the computer-executable instructions stored in the memory to implement the optical proximity effect correction method as described in the first aspect.

[0033] On the other hand, the present application provides a computer-readable storage medium, wherein the computer-readable storage medium stores computer-executable instructions. When the instructions are executed, the computer executes the optical proximity effect correction method as described in the first aspect.

[0034] In summary, an embodiment of the present application provides a method for correcting an optical proximity effect, which first obtains a target through-hole pattern, that is, a target pattern to be simulated. The non-fixed edge of the target through-hole pattern is segmented according to a preset segmentation value and a known segmentation edge length to obtain a plurality of segmented edges. The target segmented edges that meet the distance conditions are screened out from the plurality of segmented edges, and the distance conditions include at least the following two conditions: the first condition is that, in the plane pattern composed of the target through-hole pattern and the sub-resolution auxiliary pattern, the distance between the target through-hole pattern and each adjacent pattern in two directions perpendicular to each other is less than a first preset distance; the second condition is that the distance between the segmented edge and the projected pattern is less than a second preset distance, and the projected pattern includes the projected pattern of the sub-resolution auxiliary pattern. Finally, a simulated pattern is obtained after optical proximity effect correction is performed based on the target segmented edge, and the correction is completed when the error between the simulated pattern and the target through-hole pattern is within a preset range.

[0035] By using the method provided in the embodiments of the present application, it is possible to screen out some of the segmented edges that need to be processed before formally performing the OPC correction, and then perform the OPC correction based on the segmented edges that need to be processed, thereby reducing the error caused by the overall movement of the pattern edge. Due to the optical proximity effect, the error between the final simulation pattern and the target through-hole pattern is smaller. Therefore, the method provided in the embodiments of the present application can reduce the error between the final simulation result and the target pattern, improve the OPC correction accuracy, and thus improve the process window, reduce process risks, and improve the performance and product yield of the circuit finally produced. BRIEF DESCRIPTION OF THE DRAWINGS

[0036] The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the present disclosure and, together with the description, serve to explain the principles of the present disclosure.

[0037] Figure 1 Schematic diagram of the error between the simulation result and the target pattern after OPC correction of the prior art provided by this application;

[0038] Figure 2 Another schematic diagram of the error between the simulation result and the target pattern after OPC correction for the prior art provided by this application;

[0039] Figure 3 A schematic diagram of an application scenario of the optical proximity effect correction method provided in this application;

[0040] Figure 4 A schematic flow chart of a method for correcting an optical proximity effect provided in one embodiment of the present application;

[0041] Figure 5A schematic diagram of a segmented portion of a non-fixed edge of a target through-hole pattern in an optical proximity effect correction method provided by one embodiment of the present application;

[0042] Figure 6 A schematic diagram of screening target segmented edges in a target through-hole pattern provided in one embodiment of the present application;

[0043] Figure 7 A schematic diagram of the error between a simulation pattern and a target through-hole pattern provided in one embodiment of the present application;

[0044] Figure 8 Another schematic diagram of the error between the simulation pattern and the target through-hole pattern provided in one embodiment of the present application;

[0045] Figure 9 A schematic diagram of an optical proximity effect correction device provided in accordance with an embodiment of the present application;

[0046] Figure 10 A schematic diagram of an electronic device provided for one embodiment of the present application.

[0047] The above drawings illustrate specific embodiments of the present disclosure, which will be described in more detail below. These drawings and textual descriptions are not intended to limit the scope of the present disclosure in any way, but rather to illustrate the concepts of the present disclosure to those skilled in the art by reference to specific embodiments. DETAILED DESCRIPTION

[0048] Exemplary embodiments will be described in detail herein, with examples illustrated in the accompanying drawings. In the following description, when referring to the drawings, identical numerals in different figures represent identical or similar elements, unless otherwise indicated. The embodiments described in the following exemplary embodiments are not intended to represent all possible embodiments consistent with the present disclosure. Rather, they are merely examples of apparatus and methods consistent with certain aspects of the present disclosure, as detailed in the appended claims.

[0049] In the description of this application, it should be understood that the terms "first" and "second" are used for descriptive purposes only and should not be understood to indicate or imply relative importance or implicitly specify the number of the technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of this application, "plurality" means two or more, unless otherwise specifically defined.

[0050] In deep-submicron integrated circuit manufacturing, model-based optical proximity correction (OPC) has been widely used in various lithography processes. Starting from the 180nm technology node, where the minimum line width on the device is smaller than the exposure wavelength, OPC has become essential and a key step in mask pattern processing.

[0051] However, in the actual correction process, due to the limitations of mask production capabilities, the OPC correction graphic segments must reach a certain size, which will affect the accuracy of the OPC correction to a certain extent, especially in the case of complex graphic structures. In addition, considering the publication cycle, a reasonable number of OPC iterations must be used, which will also affect the accuracy of the final result. Although the OPC software can automatically adjust the layout based on the error between the simulation results and the target graphics, in the case of high graphic density, the mutual influence between graphics often makes this layout correction more difficult. The slightest local change of each graphic may affect the imaging results of adjacent graphics. Therefore, even after multiple iterative processes, there are still cases where some graphics or parts of graphics cannot achieve the target.

[0052] See Figure 1 and Figure 2 , Figure 2 for Figure 1 The simulation results (i.e. simulation graph, Figure 1 The irregular shape in the image) and the target shape ( Figure 1 The error between the simulated pattern and the target pattern is 4.1nm, and the error between the simulated pattern and the target pattern is very large.

[0053] Based on this, the present application provides an optical proximity effect correction method, device, electronic device, and storage medium. The optical proximity effect correction method includes: obtaining a target through-hole pattern, segmenting the non-fixed edge of the target through-hole pattern according to a preset segmentation value and a known segmentation edge length to obtain a plurality of segmented edges, wherein the shape of the target through-hole pattern is a rectangle, and the target through-hole pattern includes fixed edges and non-fixed edges. Filtering out target segmented edges that meet the distance conditions from the multiple segmented edges, the distance conditions include at least the following two conditions: the first condition is that, in the plane pattern composed of the target through-hole pattern and the sub-resolution auxiliary pattern, the distance between the target through-hole pattern and each adjacent pattern in two directions perpendicular to each other is less than a first preset distance; the second condition is that the distance between the segmented edge and the projected pattern is less than a second preset distance, and the projected pattern includes the projected pattern of the sub-resolution auxiliary pattern. Finally, after performing optical proximity effect correction based on the target segmented edge, a simulation pattern is obtained, and when the error between the simulation pattern and the target through-hole pattern is within a preset range, the correction is completed.

[0054] By selecting the segmented edges that require processing and then performing OPC corrections based on these segments, errors caused by overall pattern edge movement are reduced. Due to the optical proximity effect, the error between the final simulated pattern and the target via pattern is minimized. This improves OPC correction accuracy, thereby improving the process window, reducing process risks, and enhancing the performance and yield of the resulting circuit.

[0055] The optical proximity effect correction method provided in the present application is applied to electronic devices, such as computers, servers used in laboratories, etc. Figure 3 This is a schematic diagram of the application of the optical proximity effect correction method provided in this application. In the figure, the electronic device obtains a target through-hole pattern and segments the non-fixed edges of the target through-hole pattern according to preset segmentation values ​​and known segment edge lengths to obtain multiple segmented edges. The target segmented edges that meet the distance conditions are selected from these multiple segmented edges. Finally, optical proximity effect correction is performed based on the target segmented edges to obtain a simulated pattern. When the error between the simulated pattern and the target through-hole pattern is within a preset range, the correction is completed.

[0056] See Figure 4 One embodiment of the present application provides an optical proximity effect correction method, comprising:

[0057] S410, obtaining a target through-hole pattern, and segmenting the non-fixed edge of the target through-hole pattern according to a preset segmentation value and a known segmentation edge length to obtain a plurality of segmented edges, wherein the target through-hole pattern is a rectangle and includes fixed edges and non-fixed edges.

[0058] Taking into account the analytical capabilities of mask production and the applicable scope of the OPC model accuracy, the short sides (line end parts, line end parts) of rectangular through-hole graphics are generally not segmented in OPC processing. It should be noted that before the rectangular through-hole graphics are segmented, the segment side length (segment) is known. However, after the line end part of the rectangular through-hole graphics is segmented, only one segment side can be obtained, and the length of the remaining side after segmentation is less than the known segment side length (segment). Therefore, the line end part in the rectangular through-hole graphics is not segmented, and the line end part is also called a fixed edge. The edge in the rectangular through-hole graphics that can obtain N segmented edges after N segmentations (N is a natural number greater than 1, for example, two segmented edges can be obtained after two segmentations, and three segmented edges can be obtained after three segmentations) is called a non-fixed edge.

[0059] Generally, the short sides of a rectangular via pattern are fixed line ends and are not segmented, while the long sides are non-fixed and can be segmented. Therefore, after obtaining the target via pattern, the target via pattern is rectangular, including fixed sides (short sides) and non-fixed sides (long sides).

[0060] After obtaining the target via pattern, the operator sets a preset segmentation value based on the current node and actual environmental factors, and then inputs this preset segmentation value into the electronic device. The electronic device segments the non-fixed edges of the target via pattern based on the preset segmentation value and the known segment edge lengths, generating multiple segmented edges.

[0061] like Figure 5 As shown in the figure, the preset segmentation value is 3, then the non-fixed side (long side) of the target through-hole pattern is segmented into 3 segmented sides of equal length, and one target through-hole pattern can obtain 6 segmented sides. If there are multiple target through-hole patterns on the mask, the non-fixed side of each target through-hole pattern will be segmented, such as Figure 5 As shown, 12 segment edges can be obtained corresponding to the two target through-hole patterns.

[0062] S420, select target segmented edges that meet the distance condition from the multiple segmented edges, where the distance condition includes at least the following two conditions: a first condition is that, in a plane figure composed of the target through-hole figure and the sub-resolution auxiliary figure, the distance between the target through-hole figure and each adjacent figure in two mutually perpendicular directions is less than a first preset distance; a second condition is that the distance between the segmented edge and the projected figure is less than a second preset distance, and the projected figure includes the projected figure of the sub-resolution auxiliary figure.

[0063] Adding some small graphics around the sparse graphics in the integrated circuit design layout makes the sparse graphics look like dense graphics from an optical perspective. These small graphics must be smaller than the resolution of the lithography machine. During exposure, these graphics only scatter the light and will not be transferred to the photoresist. Therefore, they are called sub-resolution auxiliary graphics or scattering strips.

[0064] like Figure 6 As shown in the figure, sub-resolution auxiliary patterns are arranged around the target through-hole pattern. In order to reduce the error caused by pattern movement, it is necessary to set distance conditions to filter multiple segmented edges to select the segmented edges with the least impact after movement.

[0065] Specifically, the distance condition includes at least two conditions.

[0066] The first condition is that, in the plane pattern composed of the target through-hole pattern and the sub-resolution auxiliary pattern, the distance between the target through-hole pattern and each adjacent pattern in two mutually perpendicular directions is less than a first preset distance.Figure 6 The first condition is that the distance between the target via pattern A and each of the adjacent via patterns B, the sub-resolution assist patterns C, D and E is less than a first preset distance. The first preset distance is determined according to the length of the segment edge, and the first preset distance is greater than the length of the segment edge. Alternatively, the first preset distance is 2length of segment, and length of segment represents the length of the segment edge, and 2length of segment represents twice the length of the segment edge. That is, the first condition is space < 2length of segment, and space represents the distance between the target via pattern and each of the adjacent patterns in two directions perpendicular to each other.

[0067] The second condition is that the distance between the segment edge and the projection pattern is less than a second preset distance, and the projection pattern includes the projection pattern of the sub-resolution assist pattern. The projection pattern refers to all patterns projected on the target via pattern, and is obtained by projecting the patterns placed on the mask on which the target via pattern is located. The patterns placed on the mask on which the target via pattern is located include the sub-resolution assist pattern and other patterns.

[0068] The second preset distance is also determined according to the length of the segment edge, and the second preset distance is less than the length of the segment edge. Alternatively, the second preset distance is 0.25length of segment (one fourth of the length of the segment edge), and the second condition is projection_length < 0.25*length of segment, and projection_length represents the length of the projection pattern projected on the segment edge.

[0069] If the segment edge ab satisfies space < 2length of segment and projection_length < 0.25*length of segment at the same time, the segment edge ab is determined as the target segment edge.

[0070] In an example, segment = 48, space = 77.5, projection_length = 1 nm, and the target segment edge includes the segment edge ab and the segment edge cd shown in the figure. Figure 6 The segment edge ab and the segment edge cd shown in the figure.

[0071] In the screening of the target segment edge, the screening can be realized by a DRC script.

[0072] S430, obtaining a simulation pattern based on the target segment edge after optical proximity correction, and completing the correction when an error between the simulation pattern and the target via pattern is within a preset range.

[0073] When the optical proximity correction is performed based on the target segment edge, the target segment edge needs to be moved first, and then the OPC correction is performed based on the moved target segment edge. Specifically, a moving direction and a moving distance of the target segment edge are obtained, and the target segment edge is moved according to the moving direction and the moving distance. Then, the optical proximity correction is performed based on the moved target segment edge to obtain a simulation pattern.

[0074] Optionally, a direction perpendicular to the target segment edge and towards the outside of the target via pattern is the moving direction. As shown in FIG. 4B, the moving direction of the target segment edge ab is direction 1, and the moving direction of the target segment edge cd is direction 2. Figure 6 Figure 6 As shown in FIG. 4B, the moving direction of the target segment edge ab is direction 1, and the moving direction of the target segment edge cd is direction 2. Figure 6

[0075] Optionally, the moving distance is determined according to the length of the target segment edge and a preset mask rule value. That is, a ratio between the length of the target segment edge and the preset mask rule value is obtained, and the ratio is rounded to obtain the moving distance. The moving distance is round(segment / MRC), where round means rounding, and MRC is the mask rule value.

[0076] For example, segment=48, MRC=18, and the ratio between the length of the target segment edge and the preset mask rule value is equal to 2.67 nm. Therefore, the moving distance is equal to 2 nm. That is, the target segment edge is moved by 2 nm according to the moving direction.

[0077] Finally, the modified pattern formed based on the moved target segment edge is corrected based on the optical proximity correction model to obtain a simulation pattern.

[0078] As shown in FIG. 4B and FIG. 4C, when the target segment edge is screened out and moved by 2 nm, due to the optical proximity effect, the error between the simulation pattern and the target via pattern is within 2 nm. Compared with the error of 4.1 nm in the prior art, the OPC correction error can be greatly reduced by the method provided in this embodiment. Figure 7 Figure 8

[0079] When the error between the simulation pattern and the target via pattern is within the preset range, the correction is completed. The preset range can be set according to the node and actual factors.

[0080] ​​​​In an optional embodiment, if the error between the simulated pattern and the target through-hole pattern is outside a preset range, the process returns to step S420 and continues until the error between the simulated pattern and the target through-hole pattern is within the preset range, completing the correction. Alternatively, if the correction is not completed after returning to the process a preset number of times, the process terminates and displays a failure message.

[0081] In summary, this embodiment provides a method for correcting an optical proximity effect, which first obtains a target through-hole pattern, that is, a target pattern to be simulated. The non-fixed edge of the target through-hole pattern is segmented according to a preset segmentation value and a known segment edge length to obtain a plurality of segment edges. The target segment edges that meet the distance conditions are screened out from the plurality of segment edges, and the distance conditions include at least the following two conditions: the first condition is that, in the plane pattern composed of the target through-hole pattern and the sub-resolution auxiliary pattern, the distance between the target through-hole pattern and each adjacent pattern in two directions perpendicular to each other is less than a first preset distance; the second condition is that the distance between the segment edge and the projected pattern is less than a second preset distance, and the projected pattern includes the projected pattern of the sub-resolution auxiliary pattern. Finally, a simulated pattern is obtained after optical proximity effect correction based on the target segment edge, and the correction is completed when the error between the simulated pattern and the target through-hole pattern is within a preset range.

[0082] By using the method provided in the embodiments of the present application, it is possible to screen out some of the segmented edges that need to be processed before formally performing the OPC correction, and then perform the OPC correction based on the segmented edges that need to be processed, thereby reducing the error caused by the overall movement of the pattern edge. Due to the optical proximity effect, the error between the final simulation pattern and the target through-hole pattern is smaller. Therefore, the method provided in the embodiments of the present application can reduce the error between the final simulation result and the target pattern, improve the OPC correction accuracy, and thus improve the process window, reduce process risks, and improve the performance and product yield of the circuit finally produced.

[0083] See Figure 9 One embodiment of the present application further provides an optical proximity effect correction device 10, comprising:

[0084] The acquisition module 11 is used to obtain a target through-hole pattern, segment the non-fixed edge of the target through-hole pattern according to a preset segmentation value and a known segmentation edge length to obtain multiple segmented edges, wherein the shape of the target through-hole pattern is a rectangle, and the target through-hole pattern includes fixed edges and non-fixed edges.

[0085] The screening module 12 is used to screen out target segmented edges from the multiple segmented edges that meet the distance conditions, where the distance conditions include at least the following two conditions: a first condition is that, in the plane figure composed of the target through-hole figure and the sub-resolution auxiliary figure, the distance between the target through-hole figure and each adjacent figure in two mutually perpendicular directions is less than a first preset distance; a second condition is that the distance between the segmented edge and the projected figure is less than a second preset distance, and the projected figure includes the projected figure of the sub-resolution auxiliary figure.

[0086] The correction module 13 is configured to perform optical proximity effect correction based on the target segmented edge to obtain a simulated pattern, and complete the correction when the error between the simulated pattern and the target through-hole pattern is within a preset range.

[0087] The length of each segment side is equal, and the first preset distance and the second preset distance are both determined according to the length of the segment side. The first preset distance is greater than the length of the segment side, and the second preset distance is less than the length of the segment side.

[0088] The correction module 13 is specifically configured to obtain a moving direction and a moving distance of a target segment edge; move the target segment edge according to the moving direction and the moving distance; and perform optical proximity effect correction on the moved target segment edge to obtain a simulated graphic.

[0089] The correction module 13 is specifically configured to move in a direction perpendicular to the target segment edge and toward the outside of the target through-hole pattern; and determine the moving distance according to the length of the target segment edge and a preset mask rule value.

[0090] The correction module 13 is specifically configured to obtain a ratio between the length of the target segment edge and a preset mask rule value; and round the ratio to obtain the moving distance.

[0091] The correction module 13 is specifically configured to correct the reconstructed graph formed based on the moved target segment edges based on an optical proximity effect correction model to obtain a simulated graph.

[0092] The correction module 13 is also used to return to the execution step of screening out the target segmented edges that meet the distance condition from the multiple segmented edges when the error between the simulation pattern and the target through-hole pattern is outside the preset range, and complete the correction until the error between the simulation pattern and the target through-hole pattern is within the preset range.

[0093] See Figure 10One embodiment of the present application further provides an electronic device 20, comprising a processor 21 and a memory 22 communicatively connected to the processor 21. The memory 22 stores computer-executable instructions, and the processor 21 executes the computer-executable instructions stored in the memory 22 to implement the optical proximity effect correction method provided in any of the above embodiments.

[0094] The present application also provides a computer-readable storage medium, which stores computer-executable instructions. When the instructions are executed, the computer-executable instructions are executed by a processor to implement the optical proximity effect correction method provided in any of the above embodiments.

[0095] The present application also provides a computer program product, including a computer program, which, when executed by a processor, implements the optical proximity effect correction method provided in any of the above embodiments.

[0096] It should be noted that the computer-readable storage medium may be a read-only memory (ROM), a programmable read-only memory (PROM), an erasable programmable read-only memory (EPROM), an electrically erasable programmable read-only memory (EEPROM), a magnetic random access memory (FRAM), a flash memory, a magnetic surface mount storage device, an optical disc, or a compact disc read-only memory (CD-ROM). It may also be various electronic devices that include one or any combination of the above memories, such as mobile phones, computers, tablet devices, personal digital assistants, etc.

[0097] It should be noted that, in this document, the terms "comprises," "includes," or any other variations thereof are intended to encompass non-exclusive inclusion, such that a process, method, article, or apparatus comprising a series of elements includes not only those elements but also other elements not explicitly listed, or elements inherent to such process, method, article, or apparatus. In the absence of further limitations, an element defined by the phrase "comprising a ..." does not exclude the presence of other identical elements in the process, method, article, or apparatus comprising the element.

[0098] The above application embodiment serial numbers are only for description, and do not represent the advantages and disadvantages of the embodiments.

[0099] Through the above description of the embodiments, those skilled in the art can clearly understand that the above-mentioned embodiment method can be realized by means of software and the necessary general hardware platform, of course, it can also be realized by hardware, but in many cases, the former is a better embodiment. Based on such understanding, the technical solutions of the present application can be embodied in the form of a software product, which is stored in a storage medium (such as ROM / RAM, magnetic disk, optical disk) and includes a plurality of instructions for causing a terminal device (which can be a mobile phone, computer, server, air conditioner, or network device) to execute the methods described in various embodiments of the present application.

[0100] The present application is described with reference to flowcharts and / or block diagrams of the methods, devices (systems), and computer program products according to embodiments of the present application. It should be understood that each flow and / or block in the flowcharts and / or block diagrams, as well as combinations of flows and / or blocks in the flowcharts and / or block diagrams, can be implemented by computer program instructions. These computer program instructions can be provided to a general-purpose computer, a special-purpose computer, an embedded processor, or other programmable data processing devices to produce a machine, so that the instructions executed by the computer or other programmable data processing devices produce a device that implements the functions specified in the flowcharts and / or block diagrams. Figure 1 one or more flows and / or blocks Figure 1 an apparatus that carries out the functions specified in one or more blocks.

[0101] These computer program instructions can also be stored in a computer-readable memory that can direct the computer or other programmable data processing devices to work in a specific way, so that the instructions stored in the computer-readable memory produce a manufactured product including instruction devices, which implement the functions specified in the flowcharts and / or block diagrams. Figure 1 one or more flows and / or blocks Figure 1 an apparatus that carries out the functions specified in one or more blocks.

[0102] These computer program instructions can also be loaded into a computer or other programmable data processing device, so that a series of operation steps are performed on the computer or other programmable device to produce a computer-implemented process, so that the instructions executed on the computer or other programmable device provide a process for implementing the functions specified in the flowcharts and / or block diagrams. Figure 1 one or more flows and / or blocks Figure 1 an apparatus that carries out the functions specified in one or more blocks.

[0103] The above are only preferred embodiments of the present application and do not limit the patent scope of the present application. Any equivalent structure or equivalent process transformation made using the contents of the present application specification and drawings, or directly or indirectly applied in other related technical fields, are also included in the patent protection scope of the present application.

Claims

1. A method for correcting an optical proximity effect, characterized in that: include: Obtain a target through-hole pattern, and segment a non-fixed edge of the target through-hole pattern according to a preset segmentation value and a known segment edge length to obtain a plurality of segment edges, wherein the target through-hole pattern is rectangular and includes fixed edges and non-fixed edges; Filtering out target segmented edges that meet distance conditions from the multiple segmented edges, the distance conditions including at least two of the following conditions: a first condition that, in a plane pattern composed of the target through-hole pattern and the sub-resolution auxiliary pattern, the distance between the target through-hole pattern and each adjacent pattern in two mutually perpendicular directions is less than a first preset distance; a second condition that the distance between the segmented edge and the projected pattern is less than a second preset distance, the projected pattern including the projected pattern of the sub-resolution auxiliary pattern; A simulation pattern is obtained after performing optical proximity effect correction based on the target segmented edge, and correction is completed when the error between the simulation pattern and the target through-hole pattern is within a preset range; The first preset distance and the second preset distance are both determined according to the length of the segment side; The first preset distance is greater than the length of the segment side, and the second preset distance is less than the length of the segment side.

2. The method according to claim 1, characterized in that The method of obtaining a simulated graphic after performing optical proximity effect correction based on the target segment edge includes: Get the moving direction and distance of the target segment edge; Moving the target segment edge according to the moving direction and the moving distance; The simulated graphics are obtained after optical proximity effect correction based on the moved target segment edges.

3. The method according to claim 2, characterized in that The step of obtaining the moving direction and moving distance of the target segment edge includes: The moving direction is perpendicular to the target segment edge and toward the outside of the target through-hole pattern; The moving distance is determined based on the length of the target segment edge and the preset mask rule value.

4. The method according to claim 3, characterized in that The step of determining the moving distance according to the length of the target segment edge and the preset mask rule value includes: Obtain the ratio between the length of the target segment edge and the preset mask rule value; The ratio is rounded to obtain the moving distance.

5. The method according to any one of claims 2 to 4, characterized in that: The method of obtaining a simulated graphic by performing optical proximity effect correction based on the moved target segment edge includes: The reconstructed graphics formed by the moved target segment edges are corrected based on the optical proximity effect correction model to obtain a simulated graphics.

6. The method according to claim 1, characterized in that The method further comprises: When the error between the simulation pattern and the target through-hole pattern is outside the preset range, return to the step of screening out the target segmented edges that meet the distance condition from the multiple segmented edges until the error between the simulation pattern and the target through-hole pattern is within the preset range, and the correction is completed.

7. An optical proximity effect correction device, characterized in that: include: an acquisition module, configured to acquire a target through-hole pattern, segment the non-fixed edge of the target through-hole pattern according to a preset segmentation value and a known segment edge length to obtain a plurality of segment edges, wherein the target through-hole pattern is rectangular and includes fixed edges and non-fixed edges; a screening module, configured to screen out target segmented edges that meet distance conditions from the plurality of segmented edges, the distance conditions comprising at least the following two conditions: a first condition that, in a plane pattern composed of the target through-hole pattern and the sub-resolution auxiliary pattern, the distance between the target through-hole pattern and each adjacent pattern in two mutually perpendicular directions is less than a first preset distance; a second condition that the distance between the segmented edge and a projected pattern is less than a second preset distance, the projected pattern including the projected pattern of the sub-resolution auxiliary pattern; the first preset distance and the second preset distance are both determined based on the length of the segmented edge; the first preset distance is greater than the length of the segmented edge, and the second preset distance is less than the length of the segmented edge; The correction module is used to obtain a simulation pattern after performing optical proximity effect correction based on the target segmented edge, and complete the correction when the error between the simulation pattern and the target through-hole pattern is within a preset range.

8. An electronic device, characterized in that: include: a processor, and a memory communicatively connected to the processor; The memory stores computer-executable instructions; The processor executes the computer-executable instructions stored in the memory to implement the optical proximity effect correction method according to any one of claims 1 to 6.

9. A computer-readable storage medium, characterized in that The computer-readable storage medium stores computer-executable instructions, and when the instructions are executed, the computer executes the optical proximity effect correction method according to any one of claims 1 to 6.

Citation Information

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