Support mechanism and ion source

Abstract

The present application provides a support mechanism for supporting a plasma generating mechanism of an ion source to maintain its relative position with a vaporizing mechanism and a distributing mechanism. The support mechanism includes: a plate body for connecting to the plasma generating mechanism to support the plasma generating mechanism, with the plasma generating mechanism and the distributing mechanism disposed on one side of the plate body, and the vaporizing mechanism disposed on the other side of the plate body; a through hole disposed in the plate body, the through hole allowing the vaporizing mechanism to at least partially pass through the plate body to connect with the distributing mechanism; a guide groove disposed on the side of the plate body facing the plasma generating mechanism; and a connector, one end of the connector being slidably disposed in the guide groove and the other end being connected to the plasma generating mechanism. Embodiments of the present application also provide an ion source.

Description

Technical Field

[0001] The present application relates to the technical field of electromagnetic devices, and in particular to a support mechanism and an ion source. Background Art

[0002] An ion source is a commonly used device that provides an ion beam. It typically includes a vaporization mechanism, a plasma generation mechanism, and a support mechanism to support the plasma generation mechanism. However, as ion sources continue to improve, existing support mechanisms are unable to meet the functional requirements of some new ion sources. Summary of the Invention

[0003] In order to solve at least one of the above-mentioned and other technical problems in the prior art, the present application provides a support mechanism and an ion source.

[0004] According to a first aspect of an embodiment of the present application, there is provided a device for supporting a plasma generating mechanism of an ion source to maintain its relative position with a vaporization mechanism and a distribution mechanism, the supporting mechanism comprising: a plate body for connecting to the plasma generating mechanism to support the plasma generating mechanism, the plasma generating mechanism and the distribution mechanism being arranged on one side of the plate body, and the vaporization mechanism being arranged on the other side of the plate body; a through hole provided on the plate body, the through hole allowing the vaporization mechanism to at least partially pass through the plate body to connect with the distribution mechanism; a guide groove provided on a side of the plate body facing the plasma generating mechanism; and a connecting member, one end of the connecting member being slidably arranged in the guide groove, and the other end of the connecting member being connected to the plasma generating mechanism.

[0005] According to a second aspect of an embodiment of the present application, an ion source is provided for providing an ion beam, comprising: a gasification mechanism for gasifying a solid raw material to form saturated steam; a distribution mechanism provided with at least one gas inlet and multiple gas outlets, the gas inlet being connected to the gasification mechanism; multiple plasma generating mechanisms, respectively connected to the gas outlets, to receive saturated steam from the gasification mechanism, the plasma generating mechanism forming a discharge chamber, the saturated steam being able to ionize in the discharge chamber to form plasma; an electron emitting mechanism, provided on one side of the plasma generating mechanism, the electron emitting mechanism being able to emit electrons into the discharge chamber to ionize the saturated steam in the discharge chamber; an extraction mechanism, the extraction mechanism being able to apply an electric field to the plasma formed in the discharge chamber to extract the plasma from the discharge chamber and form an ion beam; and a support mechanism as described in the first aspect of the embodiment of the present application, the support mechanism being used to support the plasma generating mechanism to maintain the relative positions among the gasification mechanism, the distribution mechanism, and the plasma generating mechanism.

[0006] The supporting mechanism and ion source provided in the embodiments of the present application enable the plasma generating mechanism to be adjusted in position while being supported. BRIEF DESCRIPTION OF THE DRAWINGS

[0007] Figure 1 is an axial schematic diagram of an ion source according to one embodiment of the present application;

[0008] Figure 2 is a top view of an ion source according to one embodiment of the present application;

[0009] Figure 3 is a cross-sectional view of an ion source according to one embodiment of the present application;

[0010] Figure 4 is an axial schematic diagram of an ion source according to another embodiment of the present application;

[0011] Figure 5 is a schematic diagram of a dispensing mechanism according to one embodiment of the present application;

[0012] Figure 6 This is a disassembled schematic diagram of a distribution mechanism according to one embodiment of the present application;

[0013] Figure 7 is a schematic diagram of a dispensing mechanism according to another embodiment of the present application;

[0014] Figure 8 is a schematic diagram of a support mechanism according to one embodiment of the present application;

[0015] Figure 9 is a partial cross-sectional view of an ion source according to another embodiment of the present application;

[0016] Figure 10 Schematic diagram of the structure of a gasification mechanism according to one embodiment of the present application;

[0017] Figure 11 Schematic diagram of a filament support structure according to one embodiment of the present application. DETAILED DESCRIPTION

[0018] In order to make the objectives, technical solutions and advantages of this application more clear, this application is further described in detail below in combination with specific embodiments and with reference to the accompanying drawings.

[0019] The embodiments of the present application first provide an ion source. The ion source provided in the present application is mainly used to provide an ion beam for an electromagnetic separator. Of course, it can also be used in other application scenarios that require the provision of an ion beam, such as ion accelerators, mass spectrometers, electromagnetic isotope separators, ion implanters, ion beam etching devices, ion thrusters, and neutral beam injectors in controlled fusion devices, without limitation.

[0020] The basic principle of an ion source to generate an ion beam is to heat a solid feedstock to form saturated vapor. This vapor is then ionized by electrons to form a plasma, which is then extracted to form an ion beam. However, the ion beams provided by conventional ion sources are typically low in intensity, impacting the efficiency of the equipment they are used in.

[0021] To this end, the embodiment of the present application provides an ion source, referring to Figure 1-Figure 3 The ion source provided by the embodiment of the present application includes a vaporization mechanism 10 , a distribution mechanism 20 , a plurality of plasma generation mechanisms 30 , an electron emission mechanism 40 and an extraction mechanism 50 .

[0022] The vaporization mechanism 10 is used to vaporize a solid raw material to form saturated steam. The solid raw material may include, but is not limited to, compounds such as rubidium chloride (RbCl). Those skilled in the art may use any suitable compound known in the art as the solid raw material, without limitation. The vaporization mechanism 10 may be configured with a suitable container and heating equipment. In actual use, the solid raw material may be placed in the container and heated using the heating equipment to vaporize it to form saturated steam.

[0023] The distribution mechanism 20 is provided with at least one gas inlet 201 and multiple gas outlets 202, wherein the gas inlet 201 is connected to the gasification mechanism 10, and the multiple gas outlets 202 are respectively connected to the multiple plasma generating mechanisms 30, so that the saturated steam formed by the gasification of the solid raw material in the gasification mechanism 10 can be distributed to the multiple plasma generating mechanisms 30 by the distribution mechanism 20.

[0024] Each plasma generating mechanism 30 forms a discharge chamber 301, in which saturated steam can be ionized to form plasma. The electron emitting mechanism 40 can emit electrons into the discharge chamber 301. The electrons entering the discharge chamber 301 collide with the saturated steam, thereby ionizing the saturated steam in the discharge chamber 301 and forming a plasma. The plasma formed in the discharge chamber 301 can be drawn out of the discharge chamber 301 under the action of the electric field applied by the extraction mechanism 50, forming an ion beam.

[0025] although Figure 1-Figure 3 In the illustrated embodiment, two plasma generating mechanisms 30 are provided. However, those skilled in the art will appreciate that a greater number of plasma generating mechanisms 30 may be provided depending on practical circumstances. The specific structure of each plasma generating mechanism 30 may be determined by reference to relevant techniques in the art. The specific structures of several plasma generating mechanisms 30 will be described in detail in the relevant sections below and will not be repeated here.

[0026] In order to enable the electron emission mechanism 40 to emit electrons into the discharge chamber 301, the plasma generation mechanism 30 may be provided with a structure allowing electrons to pass through, which may correspond to the position of the electron emission mechanism 40, for example, Figure 3 In the embodiment shown in FIG, the electron emission mechanism 40 is arranged above the plasma generating mechanism 30 , and an electron window 302 is provided at the top of the corresponding discharge chamber 301 so that the electrons emitted by the electron emission mechanism 40 can enter the discharge chamber 301 through the electron window 302 .

[0027] The electron emission mechanism 40 can be any suitable device capable of emitting electrons as provided in the related art. For example, the electron emission mechanism 40 can be a hot cathode discharge device that emits electrons by heating a cathode via a filament. The specific structures of several electron emission mechanisms 40 will be described in detail in the relevant sections below and will not be repeated here.

[0028] The extraction mechanism 50 can apply an electric field to the discharge chamber 301 to extract the plasma in the discharge chamber 301. In some embodiments, the extraction mechanism 50 may include one or more extraction electrodes arranged inside or on one side of the plasma generating mechanism 30. For example, the extraction mechanism 50 may include a first electrode arranged on a wall of the plasma generating mechanism 30, and a second electrode and a third electrode arranged on one side of the plasma generating mechanism 30. The first electrode can be specifically arranged in the wall of the discharge chamber 301 on the side where the outlet (extraction slit) is formed, and the second electrode and the third electrode can be electrode plates.

[0029] In some embodiments, the second electrode can be at a negative potential, and the third electrode can be at a zero potential. This arrangement, on the one hand, prevents electrons in the plasma of the extracted ion beam from being attracted by the positive potential and reaching the second electrode, thereby preventing overheating and damage to the discharge chamber 301. On the other hand, it prevents electron loss in the plasma of the extracted ion beam, facilitating space charge compensation and ion beam focusing. This also helps to increase the intensity of the extracted ion beam.

[0030] Understandably, the size of the discharge chamber 301 formed by a single plasma generating mechanism 30 is strictly limited. An inappropriate size will make it difficult for the saturated vapor to effectively ionize and form a plasma, which is also one of the main factors limiting the intensity of the ion beam generated by the ion source. However, in the present application, multiple plasma generating mechanisms 30 are simultaneously provided in a single ion source, and a distribution mechanism 20 is used to distribute the saturated vapor generated in the vaporization mechanism 10 to each plasma generating mechanism 30. As a result, the multiple plasma generating mechanisms 30 can operate simultaneously and generate an ion beam, thereby effectively increasing the intensity of the ion beam generated by the ion source.

[0031] It can be understood that in actual use, it is necessary to ensure that the opening (extraction slit) of the plasma generating mechanism 30 and the opening (extraction slit) of the extraction mechanism 50 are accurately aligned to ensure that the plasma is successfully extracted to form an ion beam. Compared with the ion source with only one plasma generating mechanism 30, the ion source in this embodiment is provided with multiple plasma generating mechanisms 30, and the multiple plasma generating mechanisms 30 need to be aligned with the extraction mechanism 50 at the same time, which is more difficult to achieve.

[0032] To this end, in this embodiment, the plurality of plasma generating mechanisms 30 are further arranged so that their relative positions are adjustable. Thus, the plurality of plasma generating mechanisms 30 can be aligned with the lead-out mechanism 50 at the same time by adjusting the relative positions between the plasma generating mechanisms 30, thereby reducing the accuracy requirements during manufacturing to a certain extent and saving manufacturing costs.

[0033] The relative position adjustment mentioned in this embodiment means that each plasma generating mechanism 30 can move relative to other plasma generating mechanisms 30 in at least one degree of freedom, for example, referring to Figure 1 and Figure 4 In the embodiment where two plasma generating mechanisms 30 are arranged side by side, it is usually necessary to adjust the distance between the two plasma generating mechanisms 30. Figure 4 In the embodiment shown, the distance between the two plasma generating mechanisms 30 is smaller than that between Figure 1 In some other embodiments, there may be a need to adjust the relative positions of the plasma generating mechanisms 30 in other degrees of freedom, and those skilled in the art can make settings according to actual needs.

[0034] During actual use, the plasma generating mechanism 30 is usually fixed to a certain component or external device. The relative position of the plasma generating mechanism 30 can be adjusted by slidingly connecting the plasma generating mechanism 30 to these components.

[0035] In some embodiments, each plasma generating mechanism 30 may specifically include a strip 31 and an extraction plate 32. The strip 31 is in communication with the gas outlet 202, and a through slot is formed on the wall opposite the gas outlet 202. The extraction plate 32 is installed at the slot opening between the two slot walls of the through slot, thereby covering the slot opening to form a discharge chamber 301. The extraction plate 32 is provided with an extraction slit 303 for extracting plasma from the discharge chamber 301.

[0036] In some embodiments, the strips 31 of the multiple plasma generating mechanisms 30 can be arranged parallel to each other, so that the positional relationship of the multiple plasma generating mechanisms 30 can be adjusted more conveniently, and it is easier to align the lead-out slits 303 of the multiple plasma generating mechanisms 30 with the lead-out mechanism 50 at the same time.

[0037] In some embodiments, the plasma generating mechanism 30 further includes a reflective shell 33 and a heating wire 34. The reflective shell 33 is disposed outside the strip 31, and the heating wire 34 is fixedly connected to the reflective shell 33.

[0038] The reflective shell 33 is used to reflect ions and heat overflowed from the plasma generating mechanism 30 to prevent the loss of ions and heat. As an example, a thermal insulation layer can be provided on the reflective shell 33 and an electric field can be formed to achieve the ion and heat reflection function.

[0039] The heating wires 34 are used to heat the discharge chamber 301 to maintain a suitable operating temperature. The heating wires 34 can be any commonly used heating wire in the art and can be fixedly connected to the reflective housing 33 in an insulated manner to prevent short circuits between the two. Those skilled in the art can determine the number and location of the heating wires 34 based on specific heating requirements, and this is not a limitation.

[0040] In some embodiments, when the distance between the plasma generating mechanisms 30 is relatively close, the multiple plasma generating mechanisms 30 may share a reflective shell 33, for example Figure 1 In the embodiment shown in FIG, two plasma generating mechanisms 30 share a reflective shell 33. In some embodiments, if the multiple plasma generating mechanisms 30 are spaced far apart, each plasma generating mechanism 30 may be provided with a reflective shell 33, for example Figure 4 In the illustrated embodiment, each of the two plasma generating mechanisms 30 is provided with a reflective shell 33 .

[0041] The reflective shell 33 can be adapted to the shape of the strip 31 so that it can better provide a reflective function. Those skilled in the art can determine the specifications of the reflective shell 33 according to the specifications of the specific strip used, and there is no limitation to this.

[0042] In some embodiments, whether multiple plasma generating mechanisms 30 share a reflective housing 33 or have separate reflective housings 33, it is necessary to ensure that the heating filaments 34 configured in all plasma generating mechanisms 30 have the same layout and number. This ensures that the discharge chambers 301 of each plasma generating mechanism 30 have the same temperature, thereby ensuring that the saturated steam in the distribution mechanism 20 can enter each discharge chamber 301 relatively evenly, without uneven gas distribution due to temperature differences.

[0043] In some embodiments, the extraction mechanism 50 can be arranged opposite to the extraction plate 32, and further configured to have an adjustable distance from the extraction plate 32 to ensure that the extraction slit on the extraction mechanism 50 can be aligned with the extraction slit 303 on the extraction plate 32 and have a suitable distance so that it can more efficiently extract the plasma to form an ion beam.

[0044] Furthermore, in some of the embodiments described above, the relative positions of the multiple plasma generating mechanisms 30 are adjustable, and each of the multiple plasma generating mechanisms 30 is connected to the distribution mechanism 20. Therefore, when the relative positions of the multiple plasma generating mechanisms 30 change, the distribution mechanism 20 must be adjusted accordingly. Meanwhile, in some other embodiments, even if the relative positions of the multiple plasma generating mechanisms 30 are not adjustable, the distribution mechanism 20 also needs to be adjusted when the specifications of the multiple plasma generating mechanisms 30 change.

[0045] To this end, in some embodiments, reference Figure 5 The distribution mechanism 20 may include an inlet pipe 21 and multiple outlet pipes 22. Each inlet pipe 21 is provided with a gas inlet 201, and each outlet pipe 22 is provided with a gas outlet 202. The multiple outlet pipes 22 are slidably connected to the inlet pipe 21, so that the relative positions of the multiple outlet pipes 22 are adjustable. In this embodiment, the relative positions of the multiple outlet pipes 22 of the distribution mechanism 20 are adjustable. Therefore, if the relative positions of the plasma distribution mechanism 30 are changed, or the specifications of the plasma distribution mechanism 30 are changed, the relative positions of the multiple outlet pipes 22 can be directly adjusted to achieve connection with the plasma distribution mechanism 30 without having to replace the distribution mechanism 20.

[0046] The sliding connection between the outlet pipe 22 and the inlet pipe 21 can be set according to the relative position adjustment requirements of the plasma generating mechanism 30. For example, when the plasma generating mechanism 30 is set to have an adjustable spacing, the outlet pipe 22 is also set to have an adjustable spacing.

[0047] Figure 6 Schematic diagram showing the dispensing mechanism 20 in some embodiments in a disassembled state, referring to Figure 5 and Figure 6In these embodiments, the outlet pipe 22 may include a connecting portion 221 and an extending portion 222. During use, the connecting portion 221 may be at least partially inserted into the inlet pipe 21 and slidable within the inlet pipe 21 to adjust the relative positions of the outlet pipes 22. The extending portion 222, after installation, may extend in a direction substantially perpendicular to the extension direction of the inlet pipe 21. The gas outlet 202 may be provided at an end of the extending portion 222 away from the inlet pipe 21. The inlet pipe 21 and the outlet pipe 22 may be sealed while being slidably connected using a suitable method. For example, a sealing gasket may be provided at the connection between the two, or the two may be relatively tightly fitted to ensure airtightness.

[0048] In this embodiment, the relative positions of the outlet tubes 22 are adjusted by slidingly connecting the connecting portion 221 with the inlet tube 21, resulting in a relatively simple structure. Furthermore, because the gas outlet 202 is located at the distal end of the extension portion 222, which extends perpendicularly to the direction of extension of the inlet tube 21, the plasma generation mechanism 30 connected to the gas outlet 202 is relatively far from the sliding connection between the inlet tube 21 and the outlet tube 22. In actual use, even when the plasma generation mechanism 30 remains connected to the distribution mechanism 20, the operator can still easily adjust the positions of the multiple outlet tubes 22 without having to disassemble the plasma generation mechanism 30, thus providing greater convenience.

[0049] Further, in Figure 1-Figure 4 In the embodiment shown in FIG. 1 with two plasma generating mechanisms 30, the gas inlet 201 can be specifically disposed on the wall of the inlet pipe 21, and the distribution mechanism 20 can include two outlet pipes 22, each slidably connected to the two ends of the inlet pipe 21 in the extending direction. In this embodiment, the inlet pipe 21 actually forms a three-way structure, and the outlet pipes 22 are connected to two openings of the inlet pipe 21, thereby further optimizing the structure of the distribution mechanism 20.

[0050] In some embodiments, the plurality of outlet pipes 22 may be symmetrically distributed around the gas inlet 201. It is understood that this symmetrical distribution helps the saturated steam entering the distribution mechanism 20 to be more evenly distributed to each plasma generating mechanism 30, thereby ensuring that each plasma generating mechanism 30 can generate plasma with high efficiency and maximize the intensity of the ion beam.

[0051] As described above, in some embodiments, the relative positions of the multiple outlet pipes 22 are set to be adjustable. During actual use, those skilled in the art can reasonably select an adjustment method so that the multiple outlet pipes 22 are still symmetrically distributed around the gas inlet 201 after the relative positions are changed, so as to ensure the uniformity of saturated steam distribution.

[0052] In some embodiments, reference Figure 7 . A plurality of gas inlets 201 may be provided on the inlet pipe 21. It can be understood that a plurality of plasma generating mechanisms 30 are provided in the ion source provided in the embodiment of the present application, so the demand for the amount of saturated steam is also increased accordingly. If a sufficient amount of saturated steam cannot be provided, the performance of the plasma generating mechanism 30 cannot be maximized. To this end, a plurality of gasification mechanisms 10 can be provided, or a plurality of containers can be provided in a gasification mechanism 10 to simultaneously generate saturated steam to increase the source of saturated steam, thereby ensuring a sufficient supply of saturated steam. Some specific setting methods will be described in the relevant parts below. Correspondingly, it is necessary to provide a plurality of gas inlets 201 on the inlet pipe 21 to distribute saturated steam from multiple sources to the plurality of plasma generating mechanisms 30.

[0053] In some embodiments, multiple gas inlets 201 can be arranged side by side on the wall of the inlet pipe 21. In some other embodiments, multiple gas inlets 201 can also be arranged on the inlet pipe 21 in other suitable ways, and their arrangement method can specifically depend on the arrangement method of the gasification mechanism 10.

[0054] Furthermore, in the above-mentioned embodiment with multiple gas inlets 201, the multiple gas inlets 201 can be distributed in a centrally symmetrical manner, and the multiple gas outlets 202 can also be distributed in a centrally symmetrical manner, and the symmetry centers of the multiple gas inlets 201 and the multiple gas outlets 202 coincide, thereby ensuring uniformity of gas distribution.

[0055] In some embodiments, reference may still be made to Figure 1-Figure 4 The ion source may further include a support mechanism 60 for supporting the plasma generating mechanism 30, thereby maintaining the relative positions of the vaporizing mechanism 10, the distributing mechanism 20, and the plasma generating mechanism 30. The support mechanism 60 may be a suitable support structure such as a flange or a bracket. Those skilled in the art may select a suitable support mechanism 60 based on the specific positional relationship between the vaporizing mechanism 10, the distributing mechanism 20, and the plasma generating mechanism 30.

[0056] In some embodiments, reference Figure 1 、 Figure 4 and Figure 8The support mechanism 60 may specifically include a plate body 61 and a through hole 62. The plate body 61 is used to connect with the plasma generating mechanism 30 to support the plasma generating mechanism 30. During use, the plasma generating mechanism 30 and the distribution mechanism 20 may be arranged on one side of the plate body 61, while the vaporization mechanism 10 is arranged on the other side of the plate body 61. The through hole 62 is provided on the plate body 61, and the through hole 62 allows the vaporization mechanism 10 to at least partially pass through the plate body 61 to connect with the distribution mechanism 20 arranged on the other side of the plate body 61.

[0057] In this embodiment, the support mechanism 60 is actually a flange structure, which can support the plasma generating mechanism 30 while also providing a certain support to the gasification mechanism 10, thereby ensuring the stability of the entire ion source and reducing the possibility of the distribution mechanism 20 being broken or deflected by external forces.

[0058] In some embodiments, as described above, the relative positions of the plurality of plasma generating mechanisms 30 may need to be adjustable. In such embodiments, the support mechanism 60 may further include a guide groove 63 and a connector 64. The guide groove 63 may be provided on a side of the plate 61 facing the plasma generating mechanism 30. One end of the connector 64 may be slidably disposed in the guide groove 63, and the other end may be connected to the plasma generating mechanism 30.

[0059] In this embodiment, a guide groove 63 and a connector 64 that can slide in the guide groove 63 are provided on the plate 61 to realize the connection of the plasma generating mechanism 30, so that the position of the plasma generating mechanism 30 can be adjusted conveniently and quickly by sliding the connector 64. The specific arrangement of the guide groove 63 can be determined according to the position adjustment requirements of the plasma generating mechanism 30. For example, Figure 1-Figure 4 In the embodiment shown, the distance between the two plasma generating mechanisms 30 needs to be adjusted. In this case, the guide groove 63 can be set to Figure 8 The oblong shape shown in FIG.

[0060] It is understandable that each plasma generating mechanism 30 requires at least one connecting member 64 for connection, and these connecting members 64 may share one guide groove 63 or may be respectively arranged in different guide grooves 63, and there is no limitation to this.

[0061] The connecting member 64 may be any suitable connecting structure, and the guide groove 63 may be adapted to fit the connecting member 64. As an example, the connecting member 64 may include a bolt, in which case the guide groove 63 may be a through hole extending through the plate body 61, and the bolt may slide freely in and out of the guide groove 63. As another example, the connecting member 64 may include a slider, and the guide groove 63 may be a sliding groove.

[0062] In this embodiment, by providing a guide groove 63 and a connecting member 64, the support mechanism 60 can better adapt to the position adjustment requirements of the plasma generating mechanism 30. At the same time, it can also well adapt to plasma generating mechanisms 30 of different specifications, avoiding frequent replacement of the support mechanism 60 during actual use.

[0063] In some embodiments, the connecting member 64 may extend in a direction away from the plate 61, so that a gap is formed between the plasma generating mechanism 30 and the plate 61, and the distribution mechanism 20 may be disposed in the gap. Figure 1 and Figure 4 As shown, in this embodiment, a gap is formed between the plate body 61 and the plasma generating mechanism 30 through a connecting piece 64, in which the distribution mechanism 20 can be set. Therefore, when the operator adjusts the position of the plasma generating mechanism 30, the position of the outlet pipe 22 in the distribution mechanism 20 can be adjusted simultaneously through the gap, which makes the operation easier.

[0064] In some embodiments, the connector 64 and the plasma generating mechanism 30 may be slidably connected, thereby enabling the plasma generating mechanism 20 to move toward or away from the plate 61. This embodiment further enables the plasma generating mechanism 20 to have position adjustment capabilities in more degrees of freedom.

[0065] In some embodiments, the support mechanism 60 may further include a fixing member configured to fix the connector 64 at a target position in the guide groove so that it cannot slide further, thereby ensuring the stability of the plasma generating mechanism 30 during actual use and preventing it from sliding accidentally. The target position may be a suitable position determined by the operator after debugging during actual use, and there is no limitation to this. The fixing member may be reasonably set according to the type of connector 64 used. For example, if the selected connector 64 is a bolt, the fixing member may be two nuts, which can be screwed into the bolt from both ends and respectively abutted on both sides of the plate 61, thereby fixing the connector 64 in the guide groove 63. For another example, if the selected connector 64 is a slider, the fixing member may be a supporting structure that can abut the connector 64 in the guide groove 63 so that it cannot slide further.

[0066] In some embodiments, as Figure 8 As shown in the figure, the projection surface shape of the guide groove 63 can be an oblong shape, and in some other embodiments, the projection surface shape of the guide groove 63 can also be a rectangular shape, an elliptical shape, or other shapes, which is not limited to this.

[0067] In some embodiments, the support mechanism 60 may include a plurality of guide groove groups, each guide groove group including at least two guide grooves 63 located in different directions of the through hole 62, and a connecting member 64 corresponding to each guide groove group is used to connect with a plasma generating mechanism 20. Figure 8 In this embodiment, the Figure 8 The two guide grooves 63 on the left half of the middle plate 61 can be a group, and the two guide grooves 63 on the right half can be another group. The two connecting members 64 corresponding to the two guide grooves 63 in one group are used to connect to a plasma generating mechanism 30. In this embodiment, a plasma generating mechanism 30 is fixed by multiple connecting members 64, which increases stability. Moreover, the multiple connecting members 64 are located in different directions of the through hole 62, so that the relative position between the plasma generating mechanism 30 and the gasification mechanism 10 can also be maintained in a relatively stable state.

[0068] In some embodiments, multiple guide groove groups can be symmetrically distributed with the through hole 62 as the center, so that the support mechanism 60 and the distribution mechanism 20 connected between the gasification mechanism 10 and the plasma generation mechanism 30 will not tilt or deform due to uneven force, further ensuring the stability of each mechanism in the entire ion source.

[0069] In some embodiments, the gasification mechanism 10 may specifically include a crucible 11 and a heating element 12 . The crucible 11 is used to contain solid raw materials, and the heating element 12 may heat the crucible 11 to gasify the solid raw materials to form saturated steam.

[0070] In some embodiments, as described above, the gasification mechanism 10 may need to provide more saturated steam for use by multiple plasma generation mechanisms 30. Figure 9 The gasification mechanism may further include a plurality of crucibles 11 so that it can process more solid raw materials and thus provide more sufficient saturated steam.

[0071] In some embodiments, multiple crucibles 11 may be arranged parallel to each other and extend toward the plasma generating mechanism 30. In this embodiment, each crucible 11 may be cylindrical and arranged parallel to each other, thereby avoiding the overall volume of the ion source being too large due to the provision of multiple crucibles 11.

[0072] In some embodiments, adjacent crucibles 11 may be arranged in close contact with each other, thereby further reducing the overall volume of the ion source. In addition, the close contact of the crucibles 11 may enable more efficient use of the heat provided by the heating element 12, thereby improving the efficiency of gasification.

[0073] In some embodiments, the crucible 11 and the heating element 12 may be disposed together in a heat-insulating housing.

[0074] In some embodiments, reference Figure 10 The heating element 12 can be insulated from the crucibles 11 on both the upper and lower surfaces in the direction in which the crucibles 11 extend. As described above, the crucibles 11 are arranged parallel to each other and extend toward the plasma generation mechanism 30, while the heating element 12 extends on both the upper and lower surfaces in the direction in which the crucibles 11 extend. This improves the heating efficiency of the heating element 12 and ensures more uniform heating across the crucibles 11. Furthermore, the heating element 12 is insulated from the crucibles 11 to prevent short circuits.

[0075] In some embodiments, still referring to Figure 10 , the heating element 12 may be filamentous, and may be one of the commonly used heating wires in the art, such as a graphite heating wire. The heating element 12 extends in a serpentine shape on the upper and lower surfaces of the extension direction of the multiple crucibles 11. Specifically, the heating element 12 may be serpentine-shaped on the upper surfaces of the multiple crucibles 11, and then be led to the lower surfaces of the multiple crucibles 11 via the side of the outermost crucible 11, and then continue to extend in a serpentine shape. In this embodiment, multiple crucibles 11 can be heated simultaneously with only one heating element 12, which simplifies the electrical structure of the ion source and enables more convenient control of the power supply circuit. At the same time, the serpentine extension of the heating element 12 also ensures that there is sufficient contact area between the heating element 12 and the crucible 11, thereby ensuring heating efficiency.

[0076] In some embodiments, reference Figure 3 The electron emission mechanism 40 may specifically include a plurality of cathodes 41 corresponding to the plurality of plasma generation mechanisms, a plurality of filaments 42 corresponding to the plurality of cathodes, and a filament support structure 43 .

[0077] Each cathode 41 is disposed on one side of the corresponding plasma generating mechanism 30. Specifically, it can be disposed at a position corresponding to the electron introduction structure (e.g., electron window 302) at the discharge chamber 301. The filament 42 is used to heat the cathode 41 so that it can emit electrons into the discharge chamber 301, and the filament support structure 43 is used to provide support for the filament 42. The cathode 41 can be fixedly connected to the plasma generating mechanism 30, and the filament support structure 43 can be fixedly connected to some external structure or some mechanism in the ion source. For example, in some embodiments, the filament support structure 43 can be connected to the support mechanism 60 described above.

[0078] Furthermore, as described above, the position of the plasma generating mechanism 30 may change, at which point the position of the cathode 41 will also change, and the position of the filament 42 needs to change accordingly in order to effectively heat the cathode 41. To this end, in some embodiments, the filament support structure 43 is configured so that each filament 42 can move in at least two degrees of freedom to adjust the relative position between the filament 42 and the cathode 41 so that it can still be aligned with the cathode 41 after the position of the cathode 41 changes. Thus, when the position, specifications, etc. of the plasma generating mechanism 30 change, there is no need to replace the filament 42 or the filament support structure 43.

[0079] In some embodiments, reference Figure 11 The filament support structure 43 may specifically include a first support unit 431 and a second support unit 432. The first support unit 431 is provided with a slide groove 4311 that allows the first support unit 431 to be adjusted in a first direction when mounted to the ion source. For example, as described above, the first support unit 431 may be slidably connected to the support mechanism 60 via the slide groove 4311, allowing it to slide relative to the support mechanism 60.

[0080] The second support unit 432 is connected to the first support unit 431 and can slide relative to the first support unit 431 in the second direction. The second support unit 432 is provided with a mounting portion 4321, and the filament 42 can be mounted in the mounting portion 4321. The sliding between the second support unit 432 and the first support unit 431 can be achieved by a sliding connection structure commonly used in the art, such as a slide groove or a slide rail, and is not limited to this.

[0081] In this embodiment, the position adjustment of the filament 42 in the first degree of freedom is achieved by sliding between the first support unit 431 and the component connected thereto, and the position adjustment of the filament 42 in the second degree of freedom is achieved by sliding between the second support unit 432 and the first support unit 431 .

[0082] In some embodiments, multiple mounting portions are formed on the second support unit 432 so that one filament support structure 43 can simultaneously support multiple filaments 42 , simplifying the overall structure. Furthermore, the positions of multiple filaments 42 can be adjusted simultaneously, simplifying operation.

[0083] In some other embodiments, a plurality of filament support structures 43 may be provided, each filament support structure 43 supporting one filament 42 , so that the position of each filament 42 can be adjusted individually, making the adjustment of the filament 42 more refined.

[0084] In some embodiments, the mounting portion 4321 is groove-shaped, and when the filament 42 is mounted on the mounting portion 4321, a gap is formed between the mounting portion 4321 and the filament 42, allowing the filament 42 to slide along the third direction within the mounting portion 4321. In this embodiment, the freedom of movement of the filament 42 is further increased to better meet different usage requirements.

[0085] In some embodiments, the first support unit 431 may include a first plate 4312 and a second plate 4313. A slide groove 4311 may be provided on the first plate 4312, while the second plate 4313 is connected to the first plate 4312 in an L-shape, and the second plate 4313 is slidably connected to the second support unit 432. In this embodiment, the slide groove 4311 is provided on the first plate 4312, and the sliding connection between the second support unit 432 and the first support unit 431 is provided on the second plate 4313, thereby preventing interference between the sliding motions in the two degrees of freedom.

[0086] In some embodiments, the second support unit 432 may include a third plate 4322 and a fourth plate 4323. The third plate 4322 is slidably connected to the second plate 4313, and the fourth plate 4323 is connected to the third plate 4322 in an L-shaped manner. The mounting portion 4321 is disposed on the fourth plate 4323. Similarly, the structure of this embodiment can prevent the sliding between the second support unit 432 and the first support unit 431 from interfering with the filament 42.

[0087] In some embodiments, the second support unit 432 may include a plurality of fourth plates 4323 arranged in a straight line along the third direction, with each fourth plate 4323 provided with a mounting portion 4321. In this embodiment, the mounting portions 4321 are provided on the plurality of fourth plates 4323, respectively, so that the filament 42 does not interfere with other filaments 42 when sliding within the mounting portions 4321.

[0088] In some embodiments, the second plate 4313 is formed with a plurality of first extensions 4314 extending in the second direction, and the third plate 4322 is formed with a plurality of second extensions 4324 extending in the second direction and corresponding to the plurality of first extensions 4314. Each second extension 4324 is slidably connected to a corresponding first extension 4314. In this embodiment, the sliding connection between the second plate 4313 and the third plate 4322 is achieved via the plurality of first extensions 4314 and second extensions 4324. Thus, when actual position adjustment is performed, adjustment can be made at the position of each extension separately without moving the entire plate, thereby simplifying the position adjustment operation.

[0089] Reference Figure 1 、 Figure 4 and Figure 8 The embodiment of the present application further provides a support mechanism 60 , which is used to support the plasma generating structure 30 , thereby maintaining the relative positions among the gasification mechanism 10 , the distribution mechanism 20 and the plasma generating mechanism 30 .

[0090] The supporting mechanism 60 may specifically include a plate body 61 , a through hole 62 , a guide groove 63 and a connecting member 64 .

[0091] The plate 61 is used to connect with the plasma generating mechanism 30 to support the plasma generating mechanism 30. In actual use, the plasma generating mechanism 30 and the distribution mechanism 20 can be arranged on one side of the plate 61, while the vaporization mechanism 10 is arranged on the other side of the plate 61. A through hole 62 is provided on the plate 61, and the through hole 62 allows the vaporization mechanism 10 to at least partially pass through the plate 61 to connect with the distribution mechanism 20 arranged on the other side of the plate 61.

[0092] The guide groove 63 may be provided on a side of the plate 61 facing the plasma generating mechanism 30 . One end of the connecting member 64 may be slidably provided in the guide groove 63 , and the other end may be connected to the plasma generating mechanism 30 .

[0093] In this embodiment, a guide groove 63 and a connector 64 that can slide in the guide groove 63 are provided on the plate 61 to realize the connection of the plasma generating mechanism 30 , so that the position of the plasma generating mechanism 30 can be adjusted conveniently and quickly by sliding the connector 64 .

[0094] The specific arrangement of the guide groove 63 can be determined according to the position adjustment requirements of the plasma generating mechanism 30. Figure 1-Figure 4 In the embodiment shown, the distance between the two plasma generating mechanisms 30 needs to be adjusted. In this case, the guide groove 63 can be set to Figure 8 The oblong shape shown in FIG.

[0095] It is understandable that each plasma generating mechanism 30 requires at least one connecting member 64 for connection, and these connecting members 64 may share one guide groove 63 or may be respectively arranged in different guide grooves 63, and there is no limitation to this.

[0096] The connecting member 64 may be any suitable connecting structure, and the guide groove 63 may be adapted to fit the connecting member 64. As an example, the connecting member 64 may include a bolt, in which case the guide groove 63 may be a through hole extending through the plate body 61, and the bolt may slide freely in and out of the guide groove 63. As another example, the connecting member 64 may include a slider, and the guide groove 63 may be a sliding groove.

[0097] In this embodiment, by providing a guide groove 63 and a connecting member 64, the support mechanism 60 can better adapt to the position adjustment requirements of the plasma generating mechanism 30. At the same time, it can also well adapt to plasma generating mechanisms 30 of different specifications, avoiding frequent replacement of the support mechanism 60 during actual use.

[0098] In some embodiments, the connecting member 64 may extend in a direction away from the plate body 61 , so that a gap is formed between the plasma generating mechanism 30 and the plate body 61 , and the distributing mechanism 20 may be disposed in the gap.

[0099] In some embodiments, the connection member 64 and the plasma generating mechanism 30 may be slidably connected, so that the plasma generating mechanism 20 can move toward or away from the plate 61 .

[0100] In some embodiments, the support mechanism 60 may further include a fixing member configured to fix the connecting member 64 at a target position in the guide groove so that the connecting member 64 cannot slide further.

[0101] In some embodiments, the projection surface shape of the guide groove 63 can be one of the shapes such as an oblong, a rectangular, or an elliptical shape.

[0102] In some embodiments, the support mechanism 60 may include multiple guide groove groups, each guide groove group includes at least two guide grooves 63 located in different directions of the through hole 62, and the connecting piece 64 corresponding to each guide groove group is used to connect with a plasma generating mechanism 20.

[0103] In some embodiments, multiple guide groove groups may be symmetrically distributed with the through hole 62 as the center.

[0104] For some specific technical details about the support mechanism 60, please refer to the description in the relevant parts above and will not be repeated here.

[0105] The embodiments of the present application have been described above. However, these embodiments are for illustrative purposes only and are not intended to limit the scope of the present application. Although each embodiment has been described separately above, this does not mean that the measures in each embodiment cannot be advantageously used in combination. The scope of the present application is defined by the appended claims and their equivalents. Without departing from the scope of the present application, those skilled in the art may make various substitutions and modifications, which should all fall within the scope of the present application.

Claims

1. A support mechanism for supporting a plasma generating mechanism of an ion source to maintain its relative position with a vaporizing mechanism and a distributing mechanism, the support mechanism comprising: a plate body, used to connect with the plasma generating mechanism to support the plasma generating mechanism, the plasma generating mechanism and the distribution mechanism are arranged on one side of the plate body, and the gasification mechanism is arranged on the other side of the plate body; a through hole, provided on the plate body, wherein the through hole allows the vaporization mechanism to at least partially pass through the plate body to be connected with the distribution mechanism; a guide groove, provided on a side of the plate body facing the plasma generating mechanism; A connecting member, one end of which is slidably disposed in the guide groove, and the other end of which is connected to the plasma generating mechanism, so that the position of the plasma generating mechanism can be adjusted by sliding the connecting member, thereby achieving adjustable relative positions of the plurality of plasma generating mechanisms.

2. The support mechanism according to claim 1, wherein: The connecting member extends in a direction away from the plate body, so that a gap is formed between the plasma generating mechanism and the plate body, and the distribution mechanism is arranged in the gap.

3. The support mechanism according to claim 1, wherein: The connecting member is slidably connected to the plasma generating mechanism, so that the plasma generating mechanism can move toward or away from the plate body.

4. The support mechanism according to claim 1, wherein: The support mechanism further comprises: A fixing member is configured to fix one end of the connecting member at a target position in the guide groove.

5. The support mechanism according to claim 1, wherein: The projection surface shape of the guide groove is any one of the following: rectangular, elliptical, and oblong.

6. The support mechanism according to claim 1, wherein: The supporting mechanism includes a plurality of guide groove groups, each of the guide groove groups includes at least two guide grooves located in different directions of the through hole, and the connecting piece corresponding to each guide groove group is used to connect with one of the plasma generating mechanisms.

7. The support mechanism according to claim 6, wherein: The plurality of guide groove groups are symmetrically distributed with the through hole as the center.

8. An ion source for providing an ion beam, comprising: Gasification mechanism, used for gasifying solid raw materials into saturated steam; a distribution mechanism, provided with at least one gas inlet and a plurality of gas outlets, wherein the gas inlet is connected to the gasification mechanism; a plurality of plasma generating mechanisms, each connected to the gas outlet to receive the saturated steam from the gasification mechanism, wherein the plasma generating mechanism forms a discharge cavity in which the saturated steam can be ionized to form plasma; an electron emission mechanism, disposed on one side of the plasma generating mechanism, capable of emitting electrons into the discharge chamber to ionize the saturated steam in the discharge chamber; an extraction mechanism, wherein the extraction mechanism is capable of applying an electric field to the plasma formed in the discharge chamber to extract the plasma from the discharge chamber and form an ion beam; as well as The support mechanism according to any one of claims 1 to 7, wherein the support mechanism is used to support the plasma generating mechanism to maintain relative positions among the vaporizing mechanism, the distributing mechanism, and the plasma generating mechanism.

9. The ion source according to claim 8, wherein The plurality of plasma generating mechanisms are arranged so that relative positions between each other are adjustable.

10. The ion source according to claim 8, wherein The electron emission mechanism comprises: a plurality of cathodes corresponding to the plurality of plasma generating mechanisms, each of the cathodes being disposed on one side of the corresponding plasma generating mechanism; a plurality of filaments corresponding to the plurality of cathodes, the filaments being used to heat the cathodes to emit electrons into the discharge chamber; and A filament support structure is used to support the multiple filaments and enable each of the filaments to move in at least two degrees of freedom to adjust the relative position of the filament and the cathode. The filament support structure is connected to the support mechanism.

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