Substrate processing method and substrate processing apparatus

Abstract

A substrate processing method and a substrate processing apparatus are provided. The substrate processing method is performed by a substrate processing apparatus (100). The substrate processing apparatus (100) includes a processing tank (110) and a bubble supply pipe (21) disposed inside the processing tank (110). In the substrate processing method, a substrate holding portion (120) dips a substrate (W) in an alkaline processing liquid (LQ) stored in the processing tank (110). A bubble supply portion (200) supplies bubbles (BB) from each of a plurality of bubble holes (G) provided in the bubble supply pipe (21) to the alkaline processing liquid (LQ) from below the substrate (W) in a state in which the substrate (W) is dipped in the alkaline processing liquid (LQ).

Description

Technical Field

[0001] This invention relates to a substrate processing method and a substrate processing apparatus. Background Technology

[0002] The substrate processing apparatus described in Patent Document 1 includes a processing tank, a substrate holding section, a fluid supply section, and a control section. The processing tank stores a processing liquid for processing the substrate. The substrate holding section holds the substrate within the processing liquid in the processing tank. The fluid supply section supplies fluid to the processing tank. The fluid is a gas. The control section controls the fluid supply section in such a way that, from the start of fluid supply to the processing tank containing the processing liquid impregnating the substrate until the end of fluid supply to the processing tank containing the processing liquid impregnating the substrate, the control section changes the fluid supply.

[0003] [Background Technical Documents]

[0004] [Patent Literature]

[0005] [Patent Document 1] Japanese Patent Application Publication No. 2020-47885 Summary of the Invention

[0006] [The problem the invention aims to solve]

[0007] However, in the substrate processing apparatus described in Patent Document 1, the processing solution is phosphoric acid. That is, the processing solution is acidic.

[0008] However, the inventors in this case have gained new insights into the possibility that the concentration of dissolved oxygen in the alkaline treatment solution may affect the substrate treatment. Therefore, the inventors in this case focus on the treatment of substrates using alkaline treatment solutions.

[0009] The present invention was made in view of the aforementioned problems, and its object is to provide a substrate processing method and a substrate processing apparatus capable of effectively processing a substrate using an alkaline treatment solution.

[0010] [Technical means to solve the problem]

[0011] According to one aspect of the present invention, the substrate processing method is performed by a substrate processing apparatus. The substrate processing apparatus includes a processing tank and a bubble supply pipe disposed inside the processing tank. The substrate processing method includes an immersion step and a bubble supply step. In the immersion step, the substrate is immersed in an alkaline processing solution stored in the processing tank. In the bubble supply step, while the substrate is immersed in the alkaline processing solution, bubbles are supplied to the alkaline processing solution from below the substrate through each of a plurality of bubble holes provided in the bubble supply pipe.

[0012] In one embodiment of the present invention, the substrate processing apparatus preferably further comprises a plate disposed inside the processing tank below the bubble supply pipe. Preferably, the substrate processing method further comprises a processing liquid introduction step, that is, while the alkaline processing liquid is stored in the processing tank, the alkaline processing liquid is introduced upwards into the processing tank through a plurality of processing liquid holes provided on the plate.

[0013] In one embodiment of the present invention, the substrate processing apparatus preferably includes a plurality of bubble supply tubes. Preferably, the substrate processing method further includes a bubble adjustment step, i.e., adjusting the bubbles for each bubble supply tube.

[0014] In one embodiment of the present invention, preferably, in the bubble supply step, gas is supplied to each bubble supply pipe, and the bubbles are supplied to the alkaline treatment liquid through the bubble orifice. Preferably, in the bubble conditioning step, a control object for conditioning the bubbles is controlled for each bubble supply pipe, and the bubbles are conditioned for each bubble supply pipe. Preferably, the control object includes at least one of the gas flow rate, the gas supply timing, and the gas supply period.

[0015] In one embodiment of the present invention, preferably during the bubble conditioning process, the controlled object is controlled for each bubble supply tube based on a physical quantity representing the amount of substrate processed before immersing the substrate in the alkaline treatment solution.

[0016] In one embodiment of the present invention, preferably, in the bubble supply process, gas is supplied to each bubble supply tube, and the bubbles are supplied to the alkaline treatment liquid through the bubble orifice. Preferably, in the bubble adjustment process, a learned model constructed by learning from learning data is used to adjust the bubbles for each bubble supply tube. Preferably, the learning data includes pre-immersion treatment information and post-immersion treatment information. Preferably, the pre-immersion treatment information is information on a physical quantity representing the amount of processing of the learning target substrate before immersion in the alkaline treatment liquid. Preferably, the post-immersion treatment information is information on a physical quantity representing the amount of processing of the learning target substrate after immersion in and removal from the alkaline treatment liquid. Preferably, when the learning target substrate is immersed in the alkaline treatment liquid, the learning data further includes at least one of the following: flow rate information representing the gas flow rate, timing information representing the gas supply sequence, and period information representing the gas supply period. Preferably, in the bubble conditioning process, input information is input into the learned model, and output information is obtained from the learned model. Preferably, the input information includes information about a physical quantity representing the amount of substrate processed before immersion in the alkaline treatment solution. Preferably, the output information includes information representing a controlled object. Preferably, the controlled object, when the substrate is immersed in the alkaline treatment solution, includes at least one of the gas flow rate, the gas supply timing, and the gas supply period. Preferably, in the bubble conditioning process, the bubbles are conditioned based on the output information.

[0017] In one embodiment of the present invention, preferably, in the bubble supply process, gas is supplied to each bubble supply tube, and the bubbles are supplied to the alkaline treatment liquid through the bubble orifice. Preferably, in the bubble adjustment process, a learned model constructed by learning from learning data is used to adjust the bubbles for each bubble supply tube. Preferably, the learning data includes pre-immersion treatment information and post-immersion treatment information. Preferably, the pre-immersion treatment information is information on a physical quantity representing the amount of the learning target substrate before immersion in the alkaline treatment liquid. Preferably, the post-immersion treatment information is information on a physical quantity representing the amount of the learning target substrate after immersion in and removal from the alkaline treatment liquid. Preferably, when the learning target substrate is immersed in the alkaline treatment liquid, the learning data further includes at least one of the following: flow rate information representing the gas flow rate, timing information representing the gas supply sequence, and period information representing the gas supply period. Preferably, in the bubble conditioning process, input information is input into the learned model, and output information is obtained from the learned model. Preferably, the input information includes information on physical quantities representing the amount of substrate processed before immersion in the alkaline treatment solution, and information representing the controlled object. Preferably, the controlled object, when the substrate is immersed in the alkaline treatment solution, includes at least one of the gas flow rate, the gas supply timing, and the gas supply period. Preferably, the output information includes information representing the clustering result of the input information. Preferably, in the bubble conditioning process, the controlled object is controlled based on the output information.

[0018] In one embodiment of the present invention, the bubble supply tube is preferably hydrophilic.

[0019] In one embodiment of the present invention, the raw material of the bubble supply tube is preferably quartz or polyetheretherketone.

[0020] According to another embodiment of the present invention, a substrate processing apparatus includes a processing tank, a substrate holding section, and a bubble supply pipe. The processing tank stores an alkaline processing solution. The substrate holding section holds a substrate and immerses the substrate in the alkaline processing solution stored in the processing tank. The bubble supply pipe has a plurality of bubble holes and is disposed inside the processing tank, supplying bubbles to the alkaline processing solution from below the substrate through each of the plurality of bubble holes while the substrate is immersed in the alkaline processing solution.

[0021] In one embodiment of the present invention, the substrate processing apparatus preferably further includes a processing liquid introduction section. Preferably, the processing liquid introduction section is disposed inside the processing tank, below the bubble supply pipe. Preferably, the processing liquid introduction section includes a plate having a plurality of processing liquid holes. Preferably, while the alkaline processing liquid is stored in the processing tank, the processing liquid introduction section introduces the alkaline processing liquid upwards into the processing tank through the plurality of processing liquid holes.

[0022] In one embodiment of the present invention, it is preferable that a plurality of the bubble supply pipes are arranged inside the processing tank. Preferably, the substrate processing apparatus further includes a bubble adjustment unit for adjusting the bubbles for each of the bubble supply pipes.

[0023] In one embodiment of the present invention, the substrate processing apparatus preferably further includes a control unit. Preferably, the bubble adjustment unit supplies gas to each of the bubble supply pipes, and supplies the bubbles to the alkaline treatment liquid through the bubble holes. Preferably, the control unit controls the control object for adjusting the bubbles for each of the bubble supply pipes by controlling the bubble adjustment unit. Preferably, the control object includes at least one of the gas flow rate, the gas supply timing, and the gas supply period.

[0024] In one embodiment of the present invention, it is preferable that the control unit controls the controlled object for each of the bubble supply tubes based on a physical quantity representing the amount of substrate processed before the substrate is immersed in the alkaline treatment solution.

[0025] In one embodiment of the present invention, the substrate processing apparatus preferably further includes a storage unit and a control unit. Preferably, the storage unit stores a learned model constructed by learning from the learning data. Preferably, the control unit controls the storage unit. Preferably, the bubble adjustment unit supplies gas to each bubble supply pipe and supplies bubbles to the alkaline treatment liquid from the bubble holes. Preferably, the learning data includes pre-immersion processing information and post-immersion processing information. Preferably, the pre-immersion processing information is information representing the physical quantity of the learning target substrate before immersion in the alkaline treatment liquid. Preferably, the post-immersion processing information is information representing the physical quantity of the learning target substrate after immersion in and removal from the alkaline treatment liquid. Preferably, when the learning target substrate is immersed in the alkaline treatment liquid, the learning data further includes at least one of the following: flow rate information representing the gas flow rate, timing information representing the gas supply sequence, and period information representing the gas supply period. Preferably, the control unit inputs input information into the learned model and obtains output information from the learned model. Preferably, the input information includes information about a physical quantity representing the amount of material processed before immersion in the alkaline treatment solution. Preferably, the output information includes information representing the controlled object. Preferably, the controlled object, when the substrate is immersed in the alkaline treatment solution, includes at least one of the gas flow rate, the gas supply timing, and the gas supply period. Preferably, the control unit adjusts the bubbles based on the output information.

[0026] In one embodiment of the present invention, the substrate processing apparatus preferably further includes a storage unit and a control unit. Preferably, the storage unit stores a learned model constructed by learning from the learning data. Preferably, the control unit controls the storage unit. Preferably, the bubble adjustment unit supplies gas to each bubble supply pipe and supplies bubbles to the alkaline treatment liquid from the bubble holes. Preferably, the learning data includes pre-immersion processing information and post-immersion processing information. Preferably, the pre-immersion processing information is information representing the physical quantity of the learning target substrate before immersion in the alkaline treatment liquid. Preferably, the post-immersion processing information is information representing the physical quantity of the learning target substrate after immersion in and removal from the alkaline treatment liquid. Preferably, when the learning target substrate has been immersed in the alkaline treatment liquid, the learning data further includes at least one of the following: flow rate information representing the gas flow rate, timing information representing the gas supply sequence, and period information representing the gas supply period. Preferably, the control unit inputs input information to the learned model and obtains output information from the learned model. Preferably, the input information includes information about a physical quantity representing the amount of material processed before immersion in the alkaline treatment solution, and information about the controlled object. Preferably, the controlled object, when the substrate is immersed in the alkaline treatment solution, includes at least one of the gas flow rate, the gas supply timing, and the gas supply period. Preferably, the output information includes information representing the clustering result of the input information. Preferably, the control unit controls the controlled object based on the output information.

[0027] In one embodiment of the present invention, it is preferred that the substrate holding portion holds a plurality of substrates spaced apart in a specific direction. Preferably, the bubble supply tube extends along the specific direction. Preferably, in the bubble supply tube, the plurality of bubble holes are arranged spaced apart in the specific direction. Preferably, a plurality of gap spaces exist in the arrangement of the plurality of substrates. Preferably, each of the plurality of gap spaces represents the space between adjacent substrates in the specific direction. Preferably, the plurality of bubble holes includes a first bubble hole, a second bubble hole, and a third bubble hole. Preferably, the first bubble hole is disposed further outward in the specific direction than the substrate disposed at one end in the specific direction. Preferably, the second bubble hole is disposed further outward in the specific direction than the substrate disposed at the other end in the specific direction. Preferably, the third bubble holes are respectively disposed corresponding to each of the plurality of gap spaces. Preferably, there are more first bubble holes than the number of third bubble holes corresponding to one of the gap spaces. Preferably, the number of second bubble pores is greater than the number of third bubble pores corresponding to the one gap space.

[0028] In one embodiment of the present invention, the bubble supply tube is preferably hydrophilic.

[0029] In one embodiment of the present invention, the raw material of the bubble supply tube is preferably quartz or polyetheretherketone.

[0030] [Invention Effects]

[0031] According to the present invention, a substrate processing method and a substrate processing apparatus are provided that can effectively process a substrate using an alkaline treatment solution. Attached Figure Description

[0032] Figure 1 This is a schematic cross-sectional view showing the substrate processing apparatus according to Embodiment 1 of the present invention.

[0033] Figure 2 It is a graph showing the relationship between dissolved oxygen concentration and etching amount in the alkaline treatment solution of Embodiment 1.

[0034] Figure 3 It is a graph showing the relationship between the bubble supply time and the dissolved oxygen concentration in the alkaline treatment solution in Embodiment 1.

[0035] Figure 4 (a) is a diagram showing the state of the substrate in Embodiment 1 before it is immersed in the alkaline treatment solution. Figure 4 (b) is a diagram showing the state of the substrate of Embodiment 1 immersed in an alkaline treatment solution.

[0036] Figure 5 This is a schematic top view showing the gas supply section of the substrate processing apparatus in Embodiment 1.

[0037] Figure 6 This is a schematic bottom view showing the processing liquid inlet of the substrate processing apparatus of Embodiment 1.

[0038] Figure 7 (a) is a schematic diagram showing the state of the substrate in Embodiment 1 before it is immersed in the alkaline treatment solution. Figure 7 (b) is a schematic diagram showing the state in which the substrate of Embodiment 1 is immersed in an alkaline treatment solution and bubbles are supplied from all bubble supply pipes. Figure 7 (c) is a schematic diagram showing the state in which the substrate of Embodiment 1 is immersed in an alkaline treatment solution and supplied with bubbles from two bubble supply pipes corresponding to the center of the substrate. Figure 7 (d) is a schematic diagram showing the state in which the substrate of Embodiment 1 is lifted from the alkaline treatment solution.

[0039] Figure 8 (a) is a schematic diagram showing the state of the substrate in Embodiment 1 before it is immersed in the alkaline treatment solution. Figure 8(b) is a schematic diagram of the state in which the substrate of Embodiment 1 is immersed in an alkaline treatment solution and bubbles are supplied from all bubble supply pipes. Figure 8 (c) is a schematic diagram showing the state in which the substrate of Embodiment 1 is immersed in an alkaline treatment solution and supplied with bubbles from two bubble supply pipes corresponding to the middle part of the substrate. Figure 8 (d) is a schematic diagram showing the state of the substrate of Embodiment 1 being lifted out of the alkaline treatment solution.

[0040] Figure 9 (a) is a schematic diagram showing the state of the substrate in Embodiment 1 before it is immersed in the alkaline treatment solution. Figure 9 (b) is a schematic diagram showing the state in which the substrate of Embodiment 1 is immersed in an alkaline treatment solution and bubbles are supplied from all bubble supply pipes. Figure 9 (c) is a schematic diagram showing the state in which the substrate of Embodiment 1 is immersed in an alkaline treatment solution and supplied with bubbles from two bubble supply tubes corresponding to the end of the substrate. Figure 9 (d) is a schematic diagram showing the state of the substrate of Embodiment 1 being lifted out of the alkaline treatment solution.

[0041] Figure 10 This is a flowchart illustrating the substrate processing method of Embodiment 1.

[0042] Figure 11 (a) and (b) are diagrams showing an example of the contact angle (hydrophilicity) of the bubble supply tube in Embodiment 1.

[0043] Figure 12 (a) and (b) are figures showing an example of the contact angle (hydrophobicity) of the bubble supply pipe in Embodiment 1.

[0044] Figure 13 This is a block diagram showing the control device of the substrate processing apparatus according to Embodiment 2 of the present invention.

[0045] Figure 14 This is a flowchart illustrating the substrate processing method of Embodiment 2.

[0046] Figure 15 This is a block diagram showing the learning device of Embodiment 2.

[0047] Figure 16 This is a flowchart illustrating the learning method of Implementation Method 2.

[0048] Figure 17 This is a flowchart illustrating the substrate processing method according to Embodiment 3 of the present invention.

[0049] Figure 18 This is a schematic cross-sectional view illustrating a substrate processing apparatus according to an embodiment of the present invention.

[0050] Figure 19 This is a diagram showing the processing result of the substrate in Embodiment 1 of the present invention.

[0051] Figure 20 This is a diagram showing the processing result of the substrate in Embodiment 2 of the present invention.

[0052] Figure 21 (a) is a perspective view showing the simulation model of Embodiments 3 to 5 of the present invention. Figure 21 (b) is a front view of the simulation model of embodiments 3 to 5 of the present invention.

[0053] Figure 22 (a) is a graph showing the simulation results of Embodiment 3 of the present invention. Figure 22 (b) is a graph showing the simulation results of Embodiment 4 of the present invention. Figure 22 (c) is a graph showing the simulation results of Embodiment 5 of the present invention. Detailed Implementation

[0054] Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. In addition, the same or equivalent parts are given the same reference numerals in the drawings without being described repeatedly. Furthermore, for ease of understanding, the X-axis, Y-axis, and Z-axis are appropriately illustrated in the drawings. The X-axis, Y-axis, and Z-axis are orthogonal to each other; the X-axis and Y-axis are parallel to the horizontal direction, and the Z-axis is parallel to the vertical direction. Furthermore, "view from above" indicates viewing the object from vertically above. "View from below" indicates viewing the object from vertically below.

[0055] (Implementation Method 1)

[0056] refer to Figures 1-10 The substrate processing apparatus 100 according to Embodiment 1 of the present invention will be described. First, refer to... Figure 1 The substrate processing apparatus 100 will be described. Figure 1 This is a schematic cross-sectional view showing the substrate processing apparatus 100. Figure 1 The substrate processing apparatus 100 shown is a batch processing apparatus that processes multiple substrates W at once using an alkaline processing solution LQ (hereinafter, "alkaline processing solution LQ"). Alternatively, the substrate processing apparatus 100 can also process a single substrate W.

[0057] The substrate processing apparatus 100 includes a processing tank 110, a substrate holding section 120, a processing liquid introduction section 130, a circulation section 140, a processing liquid supply section 150, a diluent supply section 160, a drain section 170, a bubble adjustment section 180, an exhaust piping section 190, a bubble supply section 200, a thickness measurement section 210, a communication section 215, and a control device 220.

[0058] The processing tank 110 stores an alkaline treatment solution LQ. Furthermore, the processing tank 110 processes multiple substrates W by immersing them in the alkaline treatment solution LQ.

[0059] Alkaline treatment solution LQ is, for example, an aqueous solution containing tetramethylammonium hydroxide (TMAH), an aqueous solution containing trimethyl-2-hydroxyethylammonium hydroxide (TMY), ammonium hydroxide (ammonia water), or a mixture of ammonia and hydrogen peroxide (SC1). Alkaline treatment solution LQ is, for example, an alkaline etching solution (hereinafter, "alkaline etching solution").

[0060] The substrate holding section 120 holds multiple substrates W. The substrate holding section 120 can also hold a single substrate W. The substrate holding section 120 includes a lifter. The substrate holding section 120 immerses the multiple substrates W, which are spaced apart and arranged neatly, in an alkaline treatment solution LQ stored in the processing tank 110. The treatment solution inlet section 130 supplies the alkaline treatment solution LQ to the processing tank 110. The circulation section 140 circulates the alkaline treatment solution LQ stored in the processing tank 110 to supply the alkaline treatment solution LQ to the treatment solution inlet section 130. The treatment solution supply section 150 supplies the alkaline treatment solution LQ to the processing tank 110. The diluent supply section 160 supplies diluent to the processing tank 110. The drain section 170 drains the alkaline treatment solution LQ from the processing tank 110. The diluent is, for example, DIW (Deionized Water).

[0061] A bubble supply unit 200 is disposed inside the treatment tank 110. The bubble supply unit 200 supplies gas GA from the bubble regulating unit 180 to the alkaline treatment liquid LQ in the treatment tank 110. Specifically, the bubble supply unit 200 supplies bubbles BB of gas GA to the alkaline treatment liquid LQ in the treatment tank 110 (e.g., Figures 7-9 The gas GA is, for example, an inert gas. Inert gases include, for example, nitrogen or argon.

[0062] The bubble supply unit 200 includes at least one bubble supply pipe 21. In Embodiment 1, the bubble supply unit 200 includes a plurality of bubble supply pipes 21. For example, the bubble supply unit 200 includes an even number of bubble supply pipes 21. Figure 1 In this example, the bubble supply unit 200 includes six bubble supply tubes 21. Furthermore, the number of bubble supply tubes 21 is not particularly limited; for example, it can be an odd number. Additionally, the vertical positions D of the multiple bubble supply tubes 21 can be the same or different. The bubble supply tubes 21 are, for example, bubbler tubes.

[0063] Each of the multiple bubble supply pipes 21 has a bubble hole G. Figure 1 In the example, the bubble pore G faces vertically upwards. Furthermore, Figure 1 Not shown, but each of the plurality of bubble supply pipes 21 has a plurality of bubble holes G ( Figure 5 The bubble supply pipe 21 supplies bubbles BB to the alkaline treatment solution LQ by ejecting gas GA supplied from the bubble regulating unit 180 through the bubble hole G. That is, bubbles BB are generated by gas GA. Details of the bubble supply unit 200 are described below.

[0064] The above is for reference only. Figure 1 As explained in Embodiment 1, by supplying air bubbles BB to the alkaline treatment solution LQ, the dissolved oxygen concentration in the alkaline treatment solution LQ can be reduced compared to the case where air bubbles BB are not supplied. As a result, the substrate W immersed in the alkaline treatment solution LQ can be effectively treated using the alkaline treatment solution LQ. That is, by supplying air bubbles BB, the amount of substrate W processed using the alkaline treatment solution LQ can be increased compared to the case where air bubbles BB are not supplied. In Embodiment 1, as an example, the treatment performed on the substrate W using the alkaline treatment solution LQ is etching of the substrate W. In this case, the amount of substrate W processed using the alkaline treatment solution LQ is the amount of substrate W etched. Therefore, by supplying air bubbles BB, the amount of substrate W etched using the alkaline treatment solution LQ can be increased.

[0065] Furthermore, according to Embodiment 1, by supplying air bubbles BB to the alkaline treatment solution LQ, the alkaline treatment solution LQ in contact with the surface of the substrate W can be effectively replaced with fresh alkaline treatment solution LQ. As a result, when a surface pattern including recesses is formed on the surface of the substrate W, the alkaline treatment solution LQ within the recesses can be effectively replaced with fresh alkaline treatment solution LQ through diffusion. Therefore, the walls within the recesses of the surface pattern can be effectively processed (etched) from a shallower position to a deeper position using the alkaline treatment solution LQ. In this specification, the surface of the substrate W refers to the main surface of the substrate W.

[0066] Next, refer to Figure 2 The relationship between dissolved oxygen concentration and etching amount is explained. Figure 2 This is a graph showing the relationship between dissolved oxygen concentration in alkaline treatment solution LQ and etching amount. The horizontal axis represents the dissolved oxygen concentration (ppm) in alkaline treatment solution LQ, and the vertical axis represents the etching amount of substrate W.

[0067] Figure 2 This example illustrates the use of TMAH as the alkaline treatment solution LQ. The concentration of TMAH is 0.31%. Gas GA is nitrogen. Thus, bubbles BB are nitrogen bubbles. A polycrystalline silicon film (polycrystalline silicon layer) is formed on the substrate W. Figure 2This indicates the etching amount of the polysilicon film with substrate W immersed in the TMAH. The etching amount is the value obtained by subtracting the thickness of the polysilicon film after immersion from the thickness of the polysilicon film before immersion in the TMAH. Sometimes the etching amount is referred to as "etching amount of substrate W". In this specification, "after immersion of substrate W" means "after immersion of substrate W and completion of the treatment, and after removing substrate W from the alkaline treatment solution LQ".

[0068] like Figure 2 As shown, the lower the dissolved oxygen concentration, the greater the etching amount (processing amount) of the substrate W. The etching amount (processing amount) is approximately directly proportional to the dissolved oxygen concentration. The proportionality constant is negative.

[0069] Next, refer to Figure 3 The relationship between the supply time of BB bubbles and the dissolved oxygen concentration is explained. Figure 3 This is a graph showing the relationship between the supply time of BB bubbles and the dissolved oxygen concentration in the alkaline treatment solution LQ. The horizontal axis represents the supply time of BB bubbles (hours), and the vertical axis represents the dissolved oxygen concentration in the alkaline treatment solution LQ (ppm).

[0070] Figure 3 This example illustrates the use of TMAH as the alkaline treatment solution LQ. The concentration of TMAH is 0.31%. The gas GA used to generate bubbles BB is nitrogen. Thus, bubbles BB are nitrogen bubbles. Curve g1 represents the dissolved oxygen concentration when the flow rate of gas GA is 10 L / min. Curve g2 represents the dissolved oxygen concentration when the flow rate of gas GA is 20 L / min. Curve g3 represents the dissolved oxygen concentration when the flow rate of gas GA is 30 L / min. In this case, the flow rate of gas GA represents the flow rate of gas GA supplied to one bubble supply pipe 21.

[0071] As can be understood from curves g1 to g3, the dissolved oxygen concentration in the alkaline treatment solution LQ remains approximately constant over about one hour. Furthermore, with a roughly constant dissolved oxygen concentration, a higher flow rate of gas GA results in a lower dissolved oxygen concentration in the alkaline treatment solution LQ. In other words, with a roughly constant dissolved oxygen concentration, a higher flow rate of gas GA results in a higher dissolved oxygen concentration of BB supplied to the alkaline treatment solution LQ. This is because a higher flow rate of gas GA results in a higher flow rate of gas BB supplied to the alkaline treatment solution LQ.

[0072] Based on curves g1 to g3, the following can be inferred: That is, it can be inferred that when there are bubbles BB in the alkaline treatment solution LQ in the treatment tank 110, the areas with more bubbles BB in the alkaline treatment solution LQ have lower dissolved oxygen concentrations, while the areas with fewer bubbles BB in the alkaline treatment solution LQ have higher dissolved oxygen concentrations. The inventors of this case have confirmed through experiments that this inference is correct.

[0073] The above is for reference only. Figure 2 and Figure 3 This indicates that the more bubbles BB supplied to the alkaline treatment solution LQ, the lower the dissolved oxygen concentration in the alkaline treatment solution LQ. Moreover, the lower the dissolved oxygen concentration in the alkaline treatment solution LQ, the greater the etching amount (processing amount) of the substrate W.

[0074] That is, the more bubbles BB supplied to the alkaline treatment solution LQ, the greater the etching amount (processing amount) of the substrate W. In other words, the higher the flow rate of the gas GA used to generate the bubbles BB, the greater the etching amount (processing amount) of the substrate W. Conversely, the fewer bubbles BB supplied to the alkaline treatment solution LQ, the less the etching amount (processing amount) of the substrate W. In other words, the lower the flow rate of the gas GA used to generate the bubbles BB, the less the etching amount (processing amount) of the substrate W.

[0075] In addition, according to Figure 2 and Figure 3 The graph suggests that, given the presence of bubbles BB in the alkaline treatment solution LQ within the treatment tank 110, areas with more bubbles BB in the alkaline treatment solution LQ result in a greater etching amount (processing amount) of the substrate W, while areas with fewer bubbles BB in the alkaline treatment solution LQ result in a smaller etching amount (processing amount) of the substrate W. The inventors of this case have confirmed through experiments that this speculation is correct.

[0076] Refer again Figure 1 The substrate processing apparatus 100 will continue to be described. The bubble adjustment unit 180 supplies gas GA to the bubble supply unit 200. Furthermore, the bubble adjustment unit 180 adjusts the amount of bubbles BB supplied to the bubble supply unit 200 by regulating the gas GA supplied to the bubble supply unit 200. The exhaust piping unit 190 discharges water vapor and gas GA from the processing tank 110.

[0077] The thickness measurement unit 210 measures the thickness of the object constituting the substrate W (hereinafter, "object TG") in a non-contact manner and generates a thickness detection signal representing the thickness of the object TG. The thickness detection signal is input to the control device 220. The object TG is an object treated with an alkaline treatment solution LQ. The object TG is, for example, the substrate W itself, the substrate body (e.g., a silicon substrate body), or a substance formed on the surface of the substrate body. The substance formed on the surface of the substrate body is, for example, a substance of the same material as the substrate body (e.g., a polycrystalline silicon film), or a substance of a different material from the substrate body (e.g., a silicon oxide film, a silicon nitride film, or a photoresist). The "substance" may also constitute a film or layer.

[0078] The thickness measurement unit 210 measures the thickness of the object TG, for example, using a spectroscopic interferometry method. Specifically, the thickness measurement unit 210 includes an optical probe, a signal line, and a thickness measuring device. The optical probe has a lens. The signal line connects the optical probe and the thickness measuring device. The signal line may include, for example, an optical fiber. The thickness measuring device has a light source and a light-receiving element. Light emitted from the light source of the thickness measuring device is emitted to the object TG via the signal line and the optical probe. Light reflected from the object TG is received by the light-receiving element of the thickness measuring device via the optical probe and the signal line. The thickness measuring device analyzes the light received by the light-receiving element to calculate the thickness of the object TG. The thickness measuring device generates a thickness detection signal representing the calculated thickness of the object TG.

[0079] The communication unit 215 is connected to a network and communicates with external devices. The network may be, for example, the Internet, a LAN (Local Area Network), a public telephone network, or a short-range wireless network. The communication unit 215 is a communication device, such as a network interface controller. The communication unit 215 may also have a wired communication module or a wireless communication module.

[0080] The control device 220 controls each component of the substrate processing apparatus 100. For example, the control device 220 controls the substrate holding section 120, the circulation section 140, the processing liquid supply section 150, the diluent supply section 160, the drain section 170, the bubble adjustment section 180, and the thickness measuring section 210.

[0081] The control device 220 includes a control unit 221 and a storage unit 223. The control unit 221 includes a processor such as a CPU (Central Processing Unit) and a GPU (Graphics Processing Unit). The storage unit 223 includes a storage device that stores data and computer programs. The processor in the control unit 221 executes the computer program stored in the storage device of the storage unit 223 to control the various components of the substrate processing apparatus 100. For example, the storage unit 223 includes a main storage device such as a semiconductor memory, and auxiliary storage devices such as semiconductor memory and hard disk drives. The storage unit 223 may also include a removable medium such as an optical disc. The storage unit 223 may be, for example, a non-transitory computer-readable storage medium. The control device 220 may also include an input device and a display device.

[0082] Then, refer to Figure 1Details of the substrate processing apparatus 100 will be described below. The processing tank 110 has a double-layer tank structure comprising an inner tank 112 and an outer tank 114. Both the inner tank 112 and the outer tank 114 have upward-opening upper openings. The inner tank 112 stores an alkaline processing solution LQ and is configured to accommodate multiple substrates W. The outer tank 114 is disposed on the outer side of the upper opening of the inner tank 112. The height of the upper edge of the outer tank 114 may also be higher than the height of the upper edge of the inner tank 112.

[0083] The processing tank 110 has a cover 116. The cover 116 can be opened and closed relative to the upper opening of the inner tank 112. By closing the cover 116, the upper opening of the inner tank 112 can be closed.

[0084] The cover 116 has opening portions 116a and 116b. Opening portion 116a is located on one side of the upper opening of the inner groove 112. Opening portion 116a is positioned near the upper edge of the inner groove 112 and can be opened and closed relative to the upper opening of the inner groove 112. Opening portion 116b is located on the other side of the upper opening of the inner groove 112. Opening portion 116b is positioned near the upper edge of the inner groove 112 and can be opened and closed relative to the upper opening of the inner groove 112. By closing opening portions 116a and 116b to cover the upper opening of the inner groove 112, the inner groove 112 is sealed.

[0085] The substrate holding section 120 moves vertically upward or downward while holding a plurality of substrates W. By moving the substrate holding section 120 vertically downward, the plurality of substrates W held by the substrate holding section 120 are immersed in the alkaline treatment solution LQ stored in the inner tank 112.

[0086] The substrate holding portion 120 includes a main plate 122 and a holding rod 124. The main plate 122 is a plate extending in the vertical direction D (Z direction). The holding rod 124 extends from a main surface of the main plate 122 in the horizontal direction (Y direction). Figure 1 In this example, three retaining rods 124 extend horizontally from one main surface of the main body plate 122. Multiple substrates W are arranged in a neat and spaced-apart manner, and the lower edges of each substrate W are held together by the multiple retaining rods 124 in an upright (vertical) position.

[0087] The substrate holding section 120 may also include a lifting unit 126. The lifting unit 126 moves the main plate 122 between a processing position where the plurality of substrates W held by the substrate holding section 120 are located within the inner tank 112, and a retracted position where the plurality of substrates W held by the substrate holding section 120 are located above the inner tank 112. Thus, by moving the main plate 122 to the processing position using the lifting unit 126, the plurality of substrates W held on the holding rod 124 are immersed in the alkaline processing solution LQ. This performs processing on the plurality of substrates W.

[0088] The treatment liquid inlet 130 is disposed inside the treatment tank 110 (specifically the inner tank 112) below the bubble supply unit 200 (specifically the bubble supply pipe 21).

[0089] Unless otherwise specified, processing groove 110 refers to inner groove 112.

[0090] The processing liquid inlet 130 includes a plate 31. The plate 31 has a generally plate shape. The plate 31 divides the interior of the processing tank 110, giving the processing tank 110 a processing chamber 113 and an inlet chamber 115. That is, the processing tank 110 has a processing chamber 113 and an inlet chamber 115. The processing chamber 113 is a chamber located inside the processing tank 110, positioned above the plate 31. A bubble supply unit 200 is disposed in the processing chamber 113. Furthermore, a substrate W is disposed in the processing chamber 113. The inlet chamber 115 is a chamber located inside the processing tank 110, positioned below the plate 31.

[0091] Plate 31 is positioned below the bubble supply section 200. Plate 31 covers the bottom surface of the processing tank 110. Plate 31 is approximately perpendicular to the vertical direction D. Plate 31 has a plurality of processing liquid holes P. The processing liquid holes P penetrate through plate 31. The processing liquid holes P are arranged across the entire surface of plate 31. The processing liquid holes P face vertically upward.

[0092] With the alkaline treatment solution LQ stored in the treatment tank 110, the treatment solution inlet 130 introduces the alkaline treatment solution LQ upwards into the treatment tank 110 through multiple treatment solution holes P. This allows the treatment solution inlet 130 to generate laminar flow of the alkaline treatment solution LQ supplied from the circulation unit 140. In other words, the treatment solution inlet 130 introduces the alkaline treatment solution LQ into the treatment tank 110 by generating laminar flow of the alkaline treatment solution LQ. The laminar flow of the alkaline treatment solution LQ flows upwards in a substantially vertical direction D from the multiple treatment solution holes P.

[0093] According to Embodiment 1, since the alkaline treatment solution LQ is introduced into the treatment tank 110 through laminar flow, the flow turbulence of the bubbles BB supplied to the alkaline treatment solution LQ by the bubble supply unit 200 can be suppressed. Therefore, the dissolved oxygen concentration in the alkaline treatment solution LQ can be effectively reduced using the bubbles BB. As a result, the substrate W can be effectively treated (etched) using the alkaline treatment solution LQ.

[0094] Specifically, the treatment fluid inlet 130 includes at least one spray section 131 and at least one dispersing plate 132. The spray section 131 is, for example, a nozzle or a tube. The dispersing plate 132 is, for example, generally plate-shaped. The dispersing plate 132 is generally perpendicular to the vertical direction D. The spray section 131 and the dispersing plate 132 are disposed in the inlet chamber 115.

[0095] The ejector section 131 is located below the dispersing plate 132. The ejector section 131 and the dispersing plate 132 face each other in the vertical direction D. The ejector section 131 ejects the alkaline treatment liquid LQ supplied from the circulation section 140 toward the dispersing plate 132. As a result, the alkaline treatment liquid LQ collides with the dispersing plate 132. As a result, the pressure of the alkaline treatment liquid LQ is dispersed by the dispersing plate 132. That is, the dispersing plate 132 disperses the pressure of the alkaline treatment liquid LQ ejected by the ejector section 131. Moreover, the alkaline treatment liquid LQ, whose pressure has been dispersed by the dispersing plate 132, diffuses in the inlet chamber 115 in a generally horizontal direction. Furthermore, the alkaline treatment liquid LQ is supplied to the treatment chamber 113 in a laminar flow form from each treatment liquid hole P of the plate 31 upward in the vertical direction D. Thus, the treatment liquid inlet section 130 has a rectifying function for the alkaline treatment liquid LQ in terms of generating a laminar flow of the alkaline treatment liquid LQ in the vertical direction D.

[0096] The circulation unit 140 includes a piping 141, a pump 142, a heater 143, a filter 144, a regulating valve 145, and a valve 146. The pump 142, heater 143, filter 144, regulating valve 145, and valve 146 are arranged sequentially from upstream to downstream of the piping 141.

[0097] Pipe 141 guides the alkaline treatment solution LQ discharged from treatment tank 110 back to treatment tank 110. Specifically, the upstream end of pipe 141 is connected to the outer tank 114. Thus, pipe 141 guides the alkaline treatment solution LQ from the outer tank 114 to the treatment solution inlet 130. The downstream end of pipe 141 is connected to the treatment solution inlet 130. Specifically, the spray section 131 is connected to the downstream end of pipe 141.

[0098] Pump 142 supplies alkaline treatment solution LQ from piping 141 to nozzle 131. As a result, nozzle 131 ejects the alkaline treatment solution LQ supplied from piping 141. Filter 144 filters the alkaline treatment solution LQ flowing through piping 141.

[0099] Heater 143 heats the alkaline treatment solution LQ flowing through pipe 141. That is, heater 143 regulates the temperature of the alkaline treatment solution LQ. Adjusting valve 145 adjusts the opening of pipe 141 to regulate the flow rate of the alkaline treatment solution LQ supplied to the spray nozzle 131. Valve 146 opens and closes pipe 141.

[0100] The treatment fluid supply unit 150 includes a nozzle 152, a pipe 154, and a valve 156. The nozzle 152 sprays the alkaline treatment fluid LQ into the outer tank 114. Alternatively, the nozzle 152 can also supply the alkaline treatment fluid LQ to the inner tank 112.

[0101] Nozzle 152 is connected to piping 154. Alkaline treatment solution LQ from treatment solution supply source TKA is supplied to piping 154. A valve 156 is installed on piping 154. When valve 156 is opened, alkaline treatment solution LQ sprayed from nozzle 152 is supplied to outer tank 114. Then, alkaline treatment solution LQ is supplied from outer tank 114 through piping 141 and from treatment solution inlet 130 to inner tank 112.

[0102] The diluent supply unit 160 includes a nozzle 162, a pipe 164, and a valve 166. The nozzle 162 sprays diluent into the outer tank 114. The nozzle 162 is connected to the pipe 164. Diluent from the diluent supply source TKB is supplied to the pipe 164. The valve 166 is disposed on the pipe 164. When the valve 166 is opened, the diluent sprayed from the nozzle 162 is supplied into the outer tank 114.

[0103] The drainage section 170 includes a drainage pipe 170a and a valve 170b. The drainage pipe 170a is connected to the bottom wall of the inner tank 112 of the treatment tank 110. The valve 170b is mounted on the drainage pipe 170a. By opening the valve 170b, the alkaline treatment solution LQ stored in the inner tank 112 is discharged to the outside through the drainage pipe 170a. The discharged alkaline treatment solution LQ is then transported to a drainage treatment device (not shown) for processing.

[0104] A bubble supply unit 200 is disposed inside the processing tank 110 (processing chamber 113). Specifically, a plurality of bubble supply pipes 21 are disposed inside the processing tank 110 (processing chamber 113). More specifically, the plurality of bubble supply pipes 21 are disposed inside the processing tank 110 above the plate 31 and below the substrate W. The bubble supply pipes 21 are made of, for example, quartz or resin.

[0105] Each of the plurality of bubble supply pipes 21 supplies gas GA to the alkaline treatment liquid LQ stored in the treatment tank 110. Specifically, the bubble supply pipe 21 is oriented upwards, i.e., towards the surface of the alkaline treatment liquid LQ, to supply gas GA to the alkaline treatment liquid LQ. In this case, the bubble supply pipe 21 supplies gas GA to the alkaline treatment liquid LQ in the form of bubbles BB.

[0106] In detail, each of the multiple bubble supply pipes 21 supplies bubbles BB from below the substrate W to the alkaline treatment solution LQ from each of the multiple bubble holes G while the substrate W is immersed in the alkaline treatment solution LQ. This reduces the dissolved oxygen concentration in the alkaline treatment solution LQ compared to when bubbles BB are not supplied. As a result, the substrate W immersed in the alkaline treatment solution LQ can be effectively treated using the alkaline treatment solution LQ. That is, by supplying bubbles BB, the amount of substrate W processed using the alkaline treatment solution LQ can be increased compared to when bubbles BB are not supplied. This point will be explained in detail below. Furthermore, by supplying bubbles BB, the alkaline treatment solution LQ in contact with the surface of the substrate W can be effectively replaced with fresh alkaline treatment solution LQ.

[0107] The bubble conditioning unit 180 supplies gas GA from the gas supply source TKC to multiple bubble supply pipes 21. Specifically, the substrate processing apparatus 100 also includes multiple pipes 181. The multiple pipes 181 are respectively connected to the multiple bubble supply pipes 21. Furthermore, the bubble conditioning unit 180 supplies gas GA from the gas supply source TKC to the multiple bubble supply pipes 21 from the multiple pipes 181. Specifically, the bubble conditioning unit 180 includes multiple bubble conditioning mechanisms 182. The multiple bubble conditioning mechanisms 182 are respectively connected to the multiple pipes 181. That is, one end of the pipe 181 is connected to the bubble supply pipe 21, and the other end of the pipe 181 is connected to the bubble conditioning mechanism 182. The multiple bubble conditioning mechanisms 182 are respectively provided corresponding to the multiple bubble supply pipes 21. The bubble conditioning mechanism 182 supplies gas GA from the gas supply source TKC to the corresponding bubble supply pipe 21 via the corresponding pipe 181.

[0108] Furthermore, the bubble adjustment unit 180 adjusts the bubbles BB for each bubble supply pipe 21. Therefore, according to Embodiment 1, the in-plane uniformity of the processing of each substrate W can be improved. Specifically, the bubble adjustment unit 180 adjusts the amount and / or number of bubbles BB for each bubble supply pipe 21.

[0109] That is, as referenced Figure 2 and Figure 3 As explained, the more bubbles BB, the more substrate W is processed, and the fewer bubbles BB, the less substrate W is processed. Therefore, when the substrate W has a thickness distribution before immersion in the alkaline treatment solution LQ, the processing amount can be adjusted in different regions of the substrate W's surface by regulating the distribution of bubbles BB. As a result, for example, bubbles BB are increased in areas of greater thickness on the substrate W's surface, or bubbles BB are reduced in areas of less thickness on the substrate W's surface. This improves the in-plane uniformity of the substrate W's processing.

[0110] In detail, in the bubble regulating section 180, each bubble regulating mechanism 182 regulates the flow rate of gas GA supplied to the corresponding bubble supply pipe 21. The regulation of the gas GA flow rate includes fixing the gas GA flow rate, increasing the gas GA flow rate, decreasing the gas GA flow rate, and setting the gas GA flow rate to zero.

[0111] The control unit 221 controls the lifting unit 126, valve 146, adjusting valve 145, heater 143, pump 142, valve 156, valve 166, valve 170b, and bubble adjustment unit 180 (multiple bubble adjustment mechanisms 182).

[0112] Next, refer to Figure 4 The substrate processing apparatus 100 before and after immersing the substrate W in the processing tank 110 will be described. Figure 4 (a) and Figure 4 (b) is a schematic perspective view of the substrate processing apparatus 100 before and after the substrate W is placed into the processing tank 110. Additionally, Figure 4 To avoid making the accompanying diagrams too complex, some have been omitted. Figure 1 The illustration shows the cover 116 and the alkaline treatment solution LQ in the treatment tank 110. Furthermore, Figure 4 (a) and Figure 4 (b) shows an example of processing one batch (e.g., 25 wafers) of substrates W in a processing tank 110.

[0113] like Figure 4 As shown in (a), the substrate holding portion 120 holds a plurality of substrates W (a batch of substrates W) spaced apart along a first direction D10 (Y direction). The plurality of substrates W are arranged in a row along the first direction D10. In other words, the first direction D10 represents the arrangement direction of the plurality of substrates W. The first direction D10 is approximately parallel to the horizontal direction and approximately perpendicular to the vertical direction D. Furthermore, each of the plurality of substrates W is approximately parallel to a second direction D20. The second direction D20 is approximately orthogonal to the first direction D10 and the vertical direction D, and is approximately parallel to the horizontal direction.

[0114] The first direction D10 corresponds to an example of the "specific direction" of the present invention.

[0115] Figure 4 In (a), the substrate holding portion 120 is located above the inner tank 112. The substrate holding portion 120 holds multiple substrates W and lowers them vertically downwards (in the Z direction). Thus, the multiple substrates W are inserted into the inner tank 112. Figure 4 As shown in (b), when the substrate holding part 120 descends into the inner tank 112, a plurality of substrates W are immersed in the alkaline treatment solution LQ in the inner tank 112.

[0116] Next, refer to Figure 5The bubble supply unit 200 is explained. Figure 5 This is a schematic top view showing the bubble supply unit 200. (Example) Figure 5 As shown, when explaining the multiple bubble supply pipes 21 by distinguishing them from each other, Figure 5 From right to left, they are labeled as bubble supply pipe 21a, bubble supply pipe 21b, bubble supply pipe 21c, bubble supply pipe 21d, bubble supply pipe 21e, and bubble supply pipe 21f.

[0117] Multiple bubble supply pipes 21 are arranged approximately parallel to each other and spaced apart when viewed from above. Figure 5 In this example, multiple bubble supply tubes 21 are symmetrically arranged with respect to an imaginary center line CL. The imaginary center line CL passes through the center of each substrate W and extends along the first direction D10.

[0118] Specifically, a plurality of bubble supply pipes 21 are arranged substantially parallel to each other and spaced apart in the second direction D20 within the processing tank 110. The bubble supply pipes 21 extend along the first direction D10. In each of the plurality of bubble supply pipes 21, a plurality of bubble holes G are arranged in a substantially straight line, spaced apart in the first direction D10. Figure 5 In the example, in each of the plurality of bubble supply pipes 21, a plurality of bubble holes G are arranged at equal intervals along a substantially straight line in the first direction D10. In each of the plurality of bubble supply pipes 21, each bubble hole G is provided on the upper surface portion of the bubble supply pipe 21.

[0119] Each of the plurality of bubble supply tubes 21 has a first tube portion T1, a second tube portion T2, and a third tube portion T3. The first tube portion T1 extends outward in the first direction D10 relative to the substrate W1 disposed at one end of the plurality of substrates W. The second tube portion T2 extends outward in the first direction D10 relative to the substrate W2 disposed at the other end of the plurality of substrates W. The third tube portion T3 is the portion of the bubble supply tube 21 between the first tube portion T1 and the second tube portion T2.

[0120] In each of the plurality of bubble supply pipes 21, the plurality of bubble holes G includes a plurality of first bubble holes G1, a plurality of second bubble holes G2, and a plurality of third bubble holes G3.

[0121] The first bubble hole G1 is configured among a plurality of bubble holes G in the first tube section T1. Figure 5 In the example, five first bubble holes G1 are configured in the first tube section T1. Second bubble holes G2 are configured among multiple bubble holes G in the second tube section T2. Figure 5 In the example, five second bubble holes G2 are provided in the second tube section T2. ​​Multiple third bubble holes G3 are provided in the third tube section T3 between the first tube section T1 and the second tube section T2.

[0122] In detail, there are multiple gap spaces GP in the arrangement of multiple substrates W. Each of the multiple gap spaces GP represents the space between adjacent substrates W in the first direction D10. The multiple gap spaces GP are spaces separated by each substrate W and arranged along the first direction D10.

[0123] In each bubble supply pipe 21, the first bubble hole G1 is disposed on the outer side of the first direction D10, which is further outward than the substrate W1. In each bubble supply pipe 21, the second bubble hole G2 is disposed on the outer side of the first direction D10, which is further outward than the substrate W2. In each bubble supply pipe 21, a plurality of third bubble holes G3 are disposed corresponding to a plurality of gap spaces GP. Figure 5 In the example, in each of the bubble supply pipes 21b to 21e, a plurality of third bubble holes G3 are respectively opposed to a plurality of gap spaces GP in the vertical direction D. Furthermore, in each of the bubble supply pipes 21a and 21f, a plurality of third bubble holes G3 are respectively opposed to a plurality of gap spaces GP in a direction intersecting the vertical direction D.

[0124] In each bubble supply pipe 21, it is preferable that there are more first bubble holes G1 than the number of third bubble holes G3 corresponding to one gap space GP among the plurality of third bubble holes G3. Furthermore, in each bubble supply pipe 21, it is preferable that there are more second bubble holes G2 than the number of third bubble holes G3 corresponding to one gap space GP. According to this preferred embodiment, bubbles BB rise smoothly near both ends of the first direction D10 of the plurality of substrates W. Therefore, bubbles BB can also be effectively supplied to the surface of the substrates W (e.g., substrates W1, W2) near both ends of the first direction D10. As a result, the alkaline treatment solution LQ in contact with the surface of the substrates W near both ends of the first direction D10 can be effectively replaced with fresh alkaline treatment solution LQ. For example, multiple bubbles BB can also be effectively supplied to the gap space GP between substrates W and substrate W1 on the side of substrate W1, and the gap space GP between substrates W and substrate W2 on the side of substrate W2, thereby enabling effective replacement with fresh alkaline treatment solution LQ.

[0125] Furthermore, for example, in the absence of the first bubble hole G1 and the second bubble hole G2, the rising of bubbles BB may be suppressed near both ends of the first direction D10 of the multiple substrates W due to the downward flow of the alkaline treatment solution LQ. As a result, bubbles BB may have difficulty entering the gap space GP near both ends of the first direction D10 of the multiple substrates W. Therefore, by providing more first bubble holes G1 and second bubble holes G2 than the third bubble hole G3, the rising of bubbles BB can be facilitated, thus suppressing the downward flow of the alkaline treatment solution LQ. In addition, for example, the alkaline treatment solution LQ rising in the gap space GP reaches the liquid surface, and the downward flow of the alkaline treatment solution LQ is generated at the liquid surface.

[0126] In addition, Figure 5 In the example, the multiple bubble holes G include five first bubble holes G1 and five second bubble holes G2. Furthermore, in each bubble supply pipe 21, one third bubble hole G3 is arranged corresponding to one gap space GP. That is, in each bubble supply pipe 21, one third bubble hole G3 is arranged opposite to one gap space GP. In this case, for example, when the substrate holding portion 120 holds a K-sheet substrate W, (K-1) third bubble holes G3 are provided. K represents, for example, an integer greater than or equal to 2. K is, for example, 50.

[0127] Here, in Figure 5 In the example, bubble supply tubes 21a and 21f, viewed from above, are located further outward in the second direction D20 than the substrate W. Additionally, bubble supply tubes 21a and 21f may overlap with the substrate W in a top view. Furthermore, bubble supply tubes 21a and 21f are the outermost of the bubble supply tubes 21a to 21f arranged in the second direction D20. Bubble supply tubes 21c and 21d are the innermost of the bubble supply tubes 21a to 21f arranged in the second direction D20. Bubble supply tube 21b is disposed between bubble supply tubes 21a and 21c. Bubble supply tube 21e is disposed between bubble supply tubes 21d and 21f.

[0128] Then, refer to Figure 5 The bubble regulating unit 180 and piping 181 will be described. The bubble regulating unit 180 supplies gas GA to each bubble supply pipe 21, while supplying alkaline treatment solution LQ in the treatment tank 110 through the bubble holes G. Figure 1 The more gas GA is supplied to the bubble supply pipe 21, the more bubbles BB are supplied from the bubble supply pipe 21.

[0129] Specifically, one end of each pipe 181 is connected to one end of the corresponding bubble supply pipe 21 in the first direction D10. On the other hand, the other end of each pipe 181 is connected to the corresponding bubble regulating mechanism 182. Furthermore, each bubble regulating mechanism 182 supplies gas GA to the corresponding bubble supply pipe 21 via the corresponding pipe 181. Moreover, each bubble regulating mechanism 182 individually regulates the flow rate of gas GA supplied to the corresponding bubble supply pipe 21 by individually regulating the flow rate of gas GA supplied to the corresponding pipe 181.

[0130] Specifically, the bubble regulating mechanism 182 includes a valve 41, a filter 42, a flow meter 43, and a regulating valve 44. The valve 41, filter 42, flow meter 43, and regulating valve 44 are arranged sequentially on the piping 181 from downstream to upstream.

[0131] The regulating valve 44 regulates the flow rate of gas GA supplied to pipe 181 by adjusting the opening of pipe 181, thereby regulating the flow rate of gas GA supplied to bubble supply pipe 21. Flow meter 43 measures the flow rate of gas GA flowing through pipe 181. The regulating valve 44 adjusts the flow rate of gas GA based on the measurement result of flow meter 43. Alternatively, a mass flow controller can be used instead of regulating valve 44 and flow meter 43.

[0132] Filter 42 removes foreign matter from the gas GA flowing through piping 181. Valve 41 opens and closes piping 181. That is, valve 41 switches the supply of gas GA from piping 181 to the bubble supply pipe 21 and stops the supply.

[0133] Furthermore, when describing the multiple bubble adjustment mechanisms 182 separately, Figure 5 From top to bottom, they are designated as bubble regulating mechanisms 182a, 182b, 182c, 182d, 182e, and 182f. Bubble regulating mechanisms 182a to 182f respectively regulate the flow rate of gas GA supplied to bubble supply pipes 21a to 21f.

[0134] Next, refer to Figure 6 The treatment fluid inlet section 130 will be described. Figure 6 This is a schematic bottom view showing the treatment fluid inlet 130. (Example) Figure 6 As shown, the treatment liquid inlet 130 includes a plurality of spray sections 131 and a plurality of dispersion plates 132. Figure 6 In this example, the treatment fluid inlet 130 includes two ejector sections 131 and two dispersing plates 132. The ejector sections 131 are spaced apart in the first direction D10. The dispersing plates 132 are also spaced apart in the first direction D10. Each dispersing plate 132 corresponds to one of the ejector sections 131. The dispersing plates 132 are disposed below the plate 31. Figure 6 In this example, the dispersing plate 132 has a generally circular shape. A plurality of ejector portions 131 are respectively disposed below the plurality of dispersing plates 132.

[0135] The ejector 131 and the dispersion plate 132, viewed from below, are arranged corresponding to the central region 31a of the plate 31 in the second direction D20. The central region 31a extends along the first direction D10.

[0136] Circulation section 140 ( Figure 1The piping 141 includes piping 133. Piping 133 extends from one end of the plate 31 in a first direction D10 to the other end. Piping 133 extends along the first direction D10. Piping 133 faces the back side of the plate 31. That is, piping 133 is disposed below the plate 31. Specifically, piping 133 is disposed below the dispersion plate 132.

[0137] The ejector section 131 is connected to the upper surface of the piping 133. The ejector section 131 communicates with the piping 133. Furthermore, the ejector section 131 protrudes vertically upward from the piping 133 toward the dispersion plate 132. Alkaline treatment solution LQ is supplied to the piping 133 from the circulation section 140. As a result, the ejector section 131 ejects the alkaline treatment solution LQ toward the dispersion plate 132. As a result, the pressure of the alkaline treatment solution LQ is dispersed, and the alkaline treatment solution LQ diffuses in the horizontal direction. Moreover, the alkaline treatment solution LQ rises from multiple treatment solution holes P to form a laminar flow. Multiple treatment solution holes P are formed on the entire surface of the plate 31.

[0138] Next, refer to Figure 7 An example of substrate W treatment performed by adjusting bubbles BB will be described. Figure 7 (a)~ Figure 7 (d) is a schematic diagram illustrating an example of the processing flow of substrate W.

[0139] like Figure 7 As shown in (a), state ST1 represents the state of substrate W before it is immersed in alkaline treatment solution LQ. Other treatments are performed on substrate W before immersion.

[0140] Hereinafter, the other treatments performed on the substrate W before immersion in the alkaline treatment solution LQ in the treatment tank 110 will be referred to as "pre-treatment".

[0141] The substrate W includes a central portion A1, two intermediate portions A2, and two end portions A3. The central portion A1 includes the center CT of the substrate W and extends along the vertical direction D. The central portion A1 represents the central region of the substrate W in the second direction D20. The end portions A3 represent the end regions of the substrate W in the second direction D20. The end portions A3 extend along the vertical direction D. One of the two end portions A3 includes an edge E1 of the substrate W. The other of the two end portions A3 includes an edge E2 of the substrate W. Edges E1 and E2 represent the vertices of the substrate W in the second direction D20. The intermediate portions A2 are the regions between the central portion A1 and the end portions A3. The two intermediate portions A2 are separated from the central portion A1.

[0142] The substrate W has a notch N. The substrate holding portion 120 ( Figure 1The substrate W is held with the notch N positioned at the apex of the vertical direction D. Thus, the substrate W is immersed in the alkaline treatment solution LQ with the notch N positioned at the apex of the vertical direction D.

[0143] Furthermore, with the notch N located at the vertex of the vertical direction D, the thickness of the substrate W in the second direction D20 is shown.

[0144] In state ST1, the thickness of the central portion A1 of the substrate is greater than the thickness of the middle portion A2 and the end portion A3 of the substrate. Therefore, the amount of processing (etching amount) on the central portion A1 of the substrate in the previous process is less than the amount of processing (etching amount) on the middle portion A2 and the end portion A3 of the substrate in the previous process.

[0145] Furthermore, in state ST1, all bubble supply pipes 21a to 21f supply bubbles BB to the alkaline treatment solution LQ. For example, after a first specific time following the start of bubble BB supply, the substrate W is immersed in the alkaline treatment solution LQ. The first specific time refers to the time until the dissolved oxygen concentration in the alkaline treatment solution LQ is approximately constant. The first specific time is, for example, 2 hours. That is, after the dissolved oxygen concentration in the alkaline treatment solution LQ is approximately constant ( Figure 3 The substrate W is immersed in an alkaline treatment solution LQ.

[0146] like Figure 7 As shown in (b), state ST2 indicates that the substrate W is immersed in the alkaline treatment solution LQ and bubbles BB are supplied from all bubble supply pipes 21a to 21f. The treatment in state ST2 is performed only for the second specific time. As a result, the substrate W is treated as a whole, thereby reducing the overall thickness of the substrate W. The second specific time is determined based on the target value of the processing volume. After the treatment in state ST2, the treatment in state ST3 is performed.

[0147] like Figure 7 As shown in (c), state ST3 indicates that the substrate W is immersed in the alkaline treatment solution LQ and is supplied with bubbles BB from the two bubble supply pipes 21c and 21d corresponding to the center portion A1 of the substrate. The treatment in state ST3 is performed only for a third specific time. The third specific time is determined based on the thickness of the substrate W before immersion (…). Figure 7 (a)) determines the third specific time. That is, the third specific time is determined based on the amount of substrate W processed before impregnation ( Figure 7 (a)) to decide.

[0148] In the substrate W before impregnation, the amount of processing in the central part A1 of the substrate during the pretreatment is less than the amount of processing in the middle part A2 and the end part A3 of the substrate. Figure 7(a)). That is, before impregnation, the thickness of the central portion A1 of the substrate is greater than the thickness of the middle portion A2 and the end portion A3 of the substrate. Therefore, in order to improve the in-plane uniformity of the thickness of the substrate W, the amount of processing of the central portion A1 of the substrate needs to be greater than the amount of processing of the middle portion A2 and the end portion A3 of the substrate.

[0149] Therefore, in state ST3, only the two bubble supply pipes 21c and 21d corresponding to the central portion A1 of the substrate supply bubble BB, while the two bubble supply pipes 21b and 21e corresponding to the middle portion A2 of the substrate and the two bubble supply pipes 21a and 21f corresponding to the end portion A3 of the substrate stop supplying bubble BB. As a result, the dissolved oxygen concentration near the middle portion A2 and the end portion A3 of the substrate is higher than the dissolved oxygen concentration near the central portion A1 of the substrate. That is, the dissolved oxygen concentration near the central portion A1 of the substrate is lower than the dissolved oxygen concentration near the middle portion A2 and the end portion A3 of the substrate. Therefore, the amount of material processed in the central portion A1 of the substrate using alkaline treatment solution LQ is greater than the amount processed in the middle portion A2 and the end portion A3 of the substrate using alkaline treatment solution LQ. As a result, the thicknesses of the central portion A1, the middle portion A2, and the end portion A3 of the substrate are approximately fixed. That is, the in-plane uniformity of the amount of material processed on the substrate W is improved. After the processing in state ST3, the processing in state ST4 is performed.

[0150] Alternatively, the flow rate of gas GA supplied from the bubble regulating section 180 to each of the bubble supply pipes 21c and 21d can be greater than the flow rate of gas GA supplied from the bubble regulating section 180 to each of the bubble supply pipes 21a, 21b, 21e, and 21f. Similarly, this allows for a lower dissolved oxygen concentration near the center portion A1 of the substrate compared to the dissolved oxygen concentrations near the middle portion A2 and the end portion A3 of the substrate. As a result, the in-plane uniformity of the substrate W's processing volume is improved, as described above.

[0151] like Figure 7 As shown in (d), state ST4 indicates the state in which the substrate W is lifted from the alkaline treatment solution LQ. In state ST4, all bubble supply pipes 21a to 21f supply bubbles BB to the alkaline treatment solution LQ. State ST4 is in standby for a fourth specific time or more. The fourth specific time refers to the time until the dissolved oxygen concentration in the alkaline treatment solution LQ is approximately fixed. The fourth specific time is, for example, 2 hours.

[0152] Next, refer to Figure 8 Another example of substrate W treatment using the adjustment of bubbles BB will be described. Figure 8 (a)~ Figure 8 (d) is a schematic diagram illustrating an example of the processing flow for substrate W. The following mainly explains... Figure 8 The state shown is the same as Figure 7The differences shown are in the states.

[0153] like Figure 8 As shown in (a), state ST11 indicates the state of substrate W before it is immersed in alkaline treatment solution LQ. Before immersion, other treatments are performed on substrate W. That is, pretreatment is performed on substrate W.

[0154] In state ST11, the thickness of the middle portion A2 of the substrate is greater than the thickness of the central portion A1 and the end portion A3 of the substrate. Therefore, the amount of processing (etching amount) on the middle portion A2 of the substrate in the previous process is less than the amount of processing (etching amount) on the central portion A1 and the end portion A3 of the substrate in the previous process.

[0155] In addition, in state ST11, all bubble supply pipes 21a to 21f supply bubbles BB to the alkaline treatment solution LQ.

[0156] like Figure 8 As shown in (b), state ST12 indicates that the substrate W is immersed in alkaline treatment solution LQ and bubbles BB are supplied from all bubble supply pipes 21a to 21f.

[0157] like Figure 8 As shown in (c), state ST13 indicates that the substrate W is immersed in the alkaline treatment solution LQ and is supplied with bubbles BB from the two bubble supply pipes 21b and 21e corresponding to the middle portion A2 of the substrate. The treatment in state ST13 is performed only for a third specific time. The third specific time is based on the thickness of the substrate W before immersion (…). Figure 8 (a)) determines the third specific time. That is, the third specific time is determined based on the amount of substrate W processed before impregnation ( Figure 8 (a)) to decide.

[0158] In the substrate W before impregnation, the amount of processing in the middle part A2 of the substrate during the pre-processing is less than the amount of processing in the central part A1 and the end part A3 of the substrate. Figure 8 (a)). That is, before impregnation, the thickness of the middle portion A2 of the substrate is greater than the thickness of the central portion A1 and the end portion A3 of the substrate. Therefore, in order to improve the in-plane uniformity of the thickness of the substrate W, the amount of processing of the middle portion A2 of the substrate needs to be greater than the amount of processing of the central portion A1 and the end portion A3 of the substrate.

[0159] Therefore, in state ST13, only the two bubble supply pipes 21b and 21e corresponding to the middle portion A2 of the substrate supply bubble BB, while the two bubble supply pipes 21c and 21d corresponding to the central portion A1 of the substrate and the two bubble supply pipes 21a and 21f corresponding to the end portion A3 of the substrate stop supplying bubble BB. As a result, the dissolved oxygen concentration near the central portion A1 and the end portion A3 of the substrate is higher than the dissolved oxygen concentration near the middle portion A2 of the substrate. That is, the dissolved oxygen concentration near the middle portion A2 of the substrate is lower than the dissolved oxygen concentration near the central portion A1 and the end portion A3 of the substrate. Therefore, the amount of material processed in the middle portion A2 of the substrate using the alkaline treatment solution LQ is greater than the amount of material processed in the central portion A1 and the end portion A3 of the substrate using the alkaline treatment solution LQ. As a result, the thicknesses of the central portion A1, the middle portion A2, and the end portion A3 of the substrate are approximately fixed. That is, the in-plane uniformity of the amount of material processed in the substrate W is improved. After the processing in state ST13, the processing in state ST14 is performed.

[0160] Alternatively, the flow rate of gas GA supplied from the bubble regulating section 180 to each of the bubble supply pipes 21b and 21e can be greater than the flow rate of gas GA supplied from the bubble regulating section 180 to each of the bubble supply pipes 21a, 21c, 21d, and 21f. Similarly, this allows for a lower dissolved oxygen concentration near the substrate center A2 compared to the dissolved oxygen concentrations near the substrate center A1 and substrate end A3. As a result, the in-plane uniformity of the substrate W's processing volume is improved, as described above.

[0161] like Figure 8 As shown in (d), state ST14 indicates the state in which the substrate W is lifted from the alkaline treatment solution LQ.

[0162] Next, refer to Figure 9 Another example of substrate W treatment using the adjustment of bubbles BB will be described. Figure 9 (a)~ Figure 9 (d) is a schematic diagram illustrating an example of the processing flow for substrate W. The following mainly explains... Figure 9 The state shown is the same as Figure 7 The differences shown are in the states.

[0163] like Figure 9 As shown in (a), state ST21 indicates the state of substrate W before it is immersed in alkaline treatment solution LQ. Before immersion, other treatments are performed on substrate W. That is, pretreatment is performed on substrate W.

[0164] In state ST21, the thickness of substrate end A3 is greater than the thickness of substrate center A1 and substrate middle A2. Therefore, the amount of processing (etching amount) on substrate end A3 in the front-end processing is less than the amount of processing (etching amount) on substrate center A1 and substrate middle A2 in the front-end processing.

[0165] In addition, in state ST21, all bubble supply pipes 21a to 21f supply bubbles BB to the alkaline treatment solution LQ.

[0166] like Figure 9 As shown in (b), state ST22 indicates that the substrate W is immersed in alkaline treatment solution LQ and bubbles BB are supplied from all bubble supply pipes 21a to 21f.

[0167] like Figure 9 As shown in (c), state ST23 indicates that the substrate W is immersed in the alkaline treatment solution LQ and is supplied with bubbles BB from the two bubble supply pipes 21a and 21f corresponding to the substrate end A3. The treatment in state ST23 is performed only for a third specific time. The third specific time is based on the thickness of the substrate W before immersion (…). Figure 9 (a)) determines the third specific time. That is, the third specific time is determined based on the amount of substrate W processed before impregnation ( Figure 9 (a)) to decide.

[0168] In the substrate W before impregnation, the amount of material processed at the substrate end A3 in the pretreatment stage is less than the amount of material processed at the substrate center A1 and the substrate middle A2. Figure 9 (a)). That is, before impregnation, the thickness of the substrate end A3 is greater than the thickness of the substrate center A1 and the substrate middle A2. Therefore, in order to improve the in-plane uniformity of the thickness of the substrate W, it is necessary to process more at the substrate end A3 than at the substrate center A1 and the substrate middle A2.

[0169] Therefore, in state ST23, only the two bubble supply pipes 21a and 21f corresponding to the substrate end A3 supply bubbles BB, while the two bubble supply pipes 21c and 21d corresponding to the substrate center A1 and the two bubble supply pipes 21b and 21e corresponding to the substrate middle A2 stop supplying bubbles BB. As a result, the dissolved oxygen concentration near the substrate center A1 and substrate middle A2 is higher than the dissolved oxygen concentration near the substrate end A3. That is, the dissolved oxygen concentration near the substrate end A3 is lower than the dissolved oxygen concentration near the substrate center A1 and substrate middle A2. Therefore, the amount of substrate end A3 processed using alkaline treatment solution LQ is greater than the amount of substrate center A1 and substrate middle A2 processed using alkaline treatment solution LQ. As a result, the thickness of the substrate center A1, substrate middle A2, and substrate end A3 is approximately fixed. That is, the in-plane uniformity of the substrate W's processing amount is improved. After the processing in state ST23, the processing in state ST24 is performed.

[0170] Alternatively, the flow rate of gas GA supplied from the bubble regulating section 180 to each of the bubble supply pipes 21a and 21f can be greater than the flow rate of gas GA supplied from the bubble regulating section 180 to each of the bubble supply pipes 21b to 21e. Similarly, the dissolved oxygen concentration near the substrate end A3 is lower than the dissolved oxygen concentration near the substrate center A1 and the substrate middle A2. As a result, the in-plane uniformity of the substrate W's processing volume is improved, as described above.

[0171] like Figure 9 As shown in (d), state ST24 indicates the state in which the substrate W is lifted from the alkaline treatment solution LQ.

[0172] The above is for reference only. Figures 7-9 The processing of substrate W using the adjustment of bubbles BB will be explained. Specifically, the bubble supply pipe 21 in bubble supply pipes 21a-21f that stops supplying bubbles BB is determined based on the thickness of substrate W before impregnation, i.e., the distribution of the amount of substrate W processed before impregnation. In other words, the bubble supply pipe 21 in bubble supply pipes 21a-21f that continues supplying bubbles BB is determined based on the thickness of substrate W before impregnation, i.e., the distribution of the amount of substrate W processed before impregnation.

[0173] For example, if the amount of substrate processed in the middle part A2 and the end part A3 before impregnation is less than the amount of substrate processed in the middle part A1 before impregnation, bubbles BB are supplied from bubble supply pipes 21a, 21b, 21e, and 21f, while the supply of bubbles BB from bubble supply pipes 21c and 21d is stopped.

[0174] For example, if the amount of substrate processed in the central part A1 before impregnation is greater than the amount of substrate processed in the middle part A2 and the end part A3 before impregnation, the supply of bubble BB from bubble supply pipes 21c and 21d is stopped, and bubble BB is supplied from bubble supply pipes 21a, 21b, 21e and 21f.

[0175] For example, if the amount of substrate processed in the middle part A2 before impregnation is greater than the amount of substrate processed in the middle part A1 and the end part A3 before impregnation, the supply of bubbles BB from bubble supply pipes 21b and 21e is stopped, and bubbles BB are supplied from bubble supply pipes 21a, 21c, 21d and 21f.

[0176] For example, if the amount of substrate processed at the substrate end A3 before impregnation is greater than the amount processed at the substrate center A1 and substrate middle A2 before impregnation, the supply of bubbles BB from bubble supply pipes 21a and 21f is stopped, while bubbles BB are supplied from bubble supply pipes 21b to 21e. Furthermore, the supply and stopping of bubbles BB from each of the bubble supply pipes 21a to 21f can be arbitrarily combined.

[0177] Furthermore, the flow rate of the gas GA used to generate bubbles BB can be adjusted for each bubble supply pipe 21a-21f according to the thickness of the substrate W before impregnation, i.e., the distribution of the amount of substrate W processed before impregnation, thereby adjusting the dissolved oxygen concentration near the center portion A1, the middle portion A2, and the end portion A3 of the substrate. That is, the amount and / or number of bubbles BB can also be adjusted for each bubble supply pipe 21a-21f according to the thickness of the substrate W before impregnation, i.e., the distribution of the amount of substrate W processed before impregnation, thereby adjusting the dissolved oxygen concentration near the center portion A1, the middle portion A2, and the end portion A3 of the substrate.

[0178] For example, if the processing volume of the substrate center A1 before impregnation is less than that of the substrate middle A2 and substrate end A3 before impregnation, the flow rate of gas GA supplied to each of the bubble supply pipes 21c and 21d is greater than the flow rate of gas GA supplied to each of the bubble supply pipes 21a, 21b, 21e, and 21f. As a result, there are more bubbles BB from each of the bubble supply pipes 21c and 21d, and the dissolved oxygen concentration near the substrate center A1 is also lower. As a result, the processing volume of the substrate center A1 is greater, thereby improving the in-plane uniformity of the processing volume of the substrate W.

[0179] For example, if the processing volume of the substrate middle section A2 before impregnation is less than that of the substrate center section A1 and substrate end section A3 before impregnation, the flow rate of gas GA supplied to each of the bubble supply pipes 21b and 21e is greater than the flow rate of gas GA supplied to each of the bubble supply pipes 21a, 21c, 21d, and 21f. As a result, there are more bubbles BB from each of the bubble supply pipes 21b and 21e, and the dissolved oxygen concentration near the substrate middle section A2 is also lower. As a result, the processing volume of the substrate middle section A2 is greater, which can improve the in-plane uniformity of the processing volume of the substrate W.

[0180] For example, if the amount of substrate processed at the substrate end A3 before impregnation is less than the amount processed at the substrate center A1 and substrate middle A2 before impregnation, the flow rate of gas GA supplied to each of the bubble supply pipes 21a and 21f is greater than the flow rate of gas GA supplied to each of the bubble supply pipes 21b to 21e. As a result, there are more bubbles BB from each of the bubble supply pipes 21a and 21f, and the dissolved oxygen concentration near the substrate end A3 is also lower. As a result, the amount of substrate processed at the substrate end A3 is greater, which can improve the in-plane uniformity of the amount of substrate processed.

[0181] For example, if the amount of gas processed in the substrate middle section A2 and substrate end section A3 before impregnation is less than the amount processed in the substrate center section A1 before impregnation, the flow rate of gas GA supplied to each of the bubble supply pipes 21a, 21b, 21e, and 21f is greater than the flow rate of gas GA supplied to each of the bubble supply pipes 21c and 21d. Furthermore, the flow rates of gas GA supplied to each of the bubble supply pipes 21a to 21f can be arbitrarily combined.

[0182] For example, if the amount of substrate processed in the central part A1 before impregnation is greater than the amount of substrate processed in the middle part A2 and the end part A3 before impregnation, the flow rate of gas GA supplied to each of the bubble supply pipes 21c and 21d is less than the flow rate of gas GA supplied to each of the bubble supply pipes 21a, 21b, 21e and 21f.

[0183] For example, if the amount of substrate processed in the middle part A2 before impregnation is greater than the amount of substrate processed in the middle part A1 and the end part A3 before impregnation, the flow rate of gas GA supplied to each of the bubble supply pipes 21b and 21e is less than the flow rate of gas GA supplied to each of the bubble supply pipes 21a, 21c, 21d and 21f.

[0184] For example, if the amount of substrate processed at the substrate end A3 before impregnation is greater than the amount of substrate processed at the substrate center A1 and substrate middle A2 before impregnation, the flow rate of gas GA supplied to each of the bubble supply pipes 21a and 21f is less than the flow rate of gas GA supplied to each of the bubble supply pipes 21b to 21e.

[0185] Furthermore, the supply of gas GA to the bubble supply pipes 21a-21f can be adjusted symmetrically left and right as described above (e.g., states ST3, ST13, ST23), or it can be adjusted asymmetrically left and right. In other words, the supply of gas GA to the bubble supply pipes 21a-21f can also be adjusted individually for each bubble supply pipe 21a-21f. Furthermore, the bubbles BB from the bubble supply pipes 21a-21f can be adjusted symmetrically left and right as described above, or they can be adjusted asymmetrically left and right. Furthermore, the bubbles BB from the bubble supply pipes 21a-21f can also be adjusted individually for each bubble supply pipe 21a-21f.

[0186] That is, when the substrate W is immersed in the alkaline treatment solution LQ and the bubbles BB from the bubble supply pipes 21a to 21f are adjusted (e.g., states ST3, ST13, ST23), the flow rate (amount and / or number of bubbles BB) of the gas GA can be different for each bubble supply pipe 21a to 21f, or the flow rate (amount and / or number of bubbles BB) of the gas GA for the bubble supply pipes 21a to 21f can be the same.

[0187] Furthermore, when the substrate W is immersed in the alkaline treatment solution LQ and the bubbles BB from the bubble supply pipes 21a to 21f are adjusted (e.g., states ST3, ST13, ST23), the total flow rate SM1 of the gas GA during immersion can be the same as or different from the total flow rate SM0 of the gas GA before immersion, depending on the thickness distribution of the substrate W before immersion, i.e., the processing volume distribution of the substrate W before immersion. The total flow rate SM1 of the gas GA can be more than or less than the total flow rate SM0 of the gas GA. When the substrate W is immersed in the alkaline treatment solution LQ (e.g., states ST3, ST13, ST23), the total flow rate SM1 of the gas GA represents the total flow rate of the gas GA supplied to the bubble supply pipes 21a to 21f. When the substrate W is not immersed in the alkaline treatment solution LQ (e.g., states ST1, ST11, ST21), the total flow rate SM0 of the gas GA represents the total flow rate of the gas GA supplied to the bubble supply pipes 21a to 21f.

[0188] Furthermore, in Figures 7-8In the process, after the processing in the state where bubbles BB are supplied from all bubble supply pipes 21a to 21f (e.g., states ST2, ST12, ST22), the processing of substrate W using the adjustment of bubbles BB is performed (e.g., states ST3, ST13, ST23). The timing of the processing of substrate W using the adjustment of bubbles BB is not particularly limited.

[0189] For example, the substrate W process using bubble BB adjustment can be performed before the processing in which bubbles BB are supplied from all bubble supply pipes 21a to 21f. Alternatively, for example, the substrate W process using bubble BB adjustment can be performed separately without performing the processing in which bubbles BB are supplied from all bubble supply pipes 21a to 21f.

[0190] Furthermore, the execution time (third specific time) of the substrate W processing (e.g., states ST3, ST13, ST23) using the adjustment of bubbles BB can be arbitrarily set according to the processing volume of substrate W before impregnation. In addition, in the substrate W processing using the adjustment of bubbles BB, the supply time and / or supply sequence of bubbles BB can be made different for each bubble supply pipe 21a to 21f.

[0191] The above is for reference only. Figures 1-9 As explained, the processing amount is selectively adjusted for each region (substrate center A1, substrate middle A2, and substrate end A3) of the substrate W surface by adjusting the bubbles BB from each bubble supply pipe 21. This point is taken as... Figure 1 The processing of the control unit 221 will be explained.

[0192] That is, the control unit 221 controls the control object (hereinafter, "control object CN") for adjusting the bubble BB for each bubble supply pipe 21 by controlling the bubble adjustment unit 180. In this case, the control object CN includes at least one of the flow rate of gas GA supplied to the bubble supply pipe 21, the timing of gas GA supply to the bubble supply pipe 21, and the supply period of gas GA to the bubble supply pipe 21.

[0193] According to Embodiment 1, by controlling at least one of the flow rate of gas GA, the supply timing of gas GA, and the supply period of gas GA for each bubble supply pipe 21, the amount and / or number of bubbles BB can be adjusted for each bubble supply pipe 21. That is, by controlling at least one of the flow rate of gas GA, the supply timing of gas GA, and the supply period of gas GA for each bubble supply pipe 21, the distribution of dissolved oxygen concentration in the alkaline treatment solution LQ of the treatment tank 110 can be controlled. As a result, the distribution of the amount of substrate W processed during immersion can be controlled according to the distribution of the amount of substrate W processed before immersion (i.e., the amount of substrate W processed using the previous stage treatment). As a result, the in-plane uniformity of the amount of substrate W processed can be improved. For example, in Embodiment 1, after processing the substrate W by immersion in the alkaline treatment solution LQ, the thickness of the film (e.g., a polycrystalline silicon film) constituting the substrate W can be substantially fixed across the entire surface of the substrate W.

[0194] Specifically, the control unit 221 controls the control object CN for regulating bubbles BB by individually controlling multiple bubble regulating mechanisms 182 and for each bubble supply pipe 21. In this case, the control unit 221 can also control the multiple bubble regulating mechanisms 182 individually and make the flow rate of gas GA, the gas GA supply sequence, and / or the gas GA supply period different for each bubble supply pipe 21.

[0195] More specifically, the control unit 221 controls the controlled object CN for each bubble supply pipe 21 based on a physical quantity representing the amount of substrate W processed before immersion in the alkaline treatment solution LQ. The amount of substrate W processed before immersion in the alkaline treatment solution LQ represents the amount of substrate W processed in the preceding process. In this case, the amount of substrate W processed represents, for example, the etching amount or etching rate of the object TG constituting the substrate W (e.g., the substrate W itself, the substrate body, the film, or the layer). Furthermore, the physical quantity representing the amount of substrate W processed can be the amount of substrate W processed itself, the amount of object TG constituting the substrate W processed, the thickness of the substrate W itself, or the thickness of object TG constituting the substrate W.

[0196] According to Embodiment 1, since the controlled object CN is controlled for each bubble supply pipe 21 based on a physical quantity representing the processing amount of the substrate W before immersion in the alkaline treatment solution LQ, the substrate W can be processed according to the processing amount of the substrate W before immersion by immersion in the alkaline treatment solution LQ. As a result, the in-plane uniformity of the processing amount of the substrate W can be improved more effectively.

[0197] More specifically, the control unit 221 controls the controlled object CN for each bubble supply pipe 21 based on the distribution of physical quantities representing the amount of substrate W processed before immersion in the alkaline treatment solution LQ. In this case, the distribution of physical quantities representing the amount of substrate W processed before immersion in the alkaline treatment solution LQ is the distribution of "physical quantities representing the amount of processed" within the surface of the substrate W.

[0198] Next, refer to Figure 1 and Figure 10 The substrate processing method of Embodiment 1 will be described. The substrate processing method is performed by a substrate processing apparatus 100. Figure 10 This is a flowchart illustrating the substrate processing method of Embodiment 1. For example... Figure 10 As shown, the substrate processing method includes steps S1 to S10. Steps S1 to S10 are executed under the control of the control unit 221.

[0199] First, in process S1, the alkaline treatment solution LQ in the treatment tank 110 is replaced. For example, the control unit 221 replaces the alkaline treatment solution LQ in the treatment tank 110 by controlling the substrate holding unit 120, the treatment solution introduction unit 130, the circulation unit 140, the treatment solution supply unit 150, the diluent supply unit 160, and the draining unit 170.

[0200] Next, in step S2, the treatment liquid introduction unit 130 generates laminar flow of alkaline treatment liquid LQ and begins to introduce alkaline treatment liquid LQ into the treatment tank 110. As a result, the alkaline treatment liquid LQ begins to circulate in the treatment tank 110. Step S2 corresponds to an example of the "treatment liquid introduction step" of the present invention.

[0201] Next, in step S3, the bubble supply unit 200 begins supplying bubbles BB from all bubble supply pipes 21 while the alkaline treatment solution LQ is stored in the treatment tank 110. That is, the bubble supply unit 180 supplies gas GA to all bubble supply pipes 21, thereby supplying bubbles BB to the alkaline treatment solution LQ from all bubble supply pipes 21. Step S3 corresponds to an example of the "bubble supply step" of the present invention. This is because step S3 continues until step S6.

[0202] Next, in step S4, the thickness measurement unit 210 measures the thickness of the substrate W before immersing it in the alkaline treatment solution LQ. Specifically, the thickness measurement unit 210 measures the thickness distribution (in-plane distribution) of the substrate W before immersion. The storage unit 223 stores information representing the thickness distribution of the substrate W before immersion. In detail, the thickness of the substrate W is the thickness of the object TG constituting the substrate W. Before immersion, a pre-processing is performed on the substrate W, therefore, in step S4, the thickness of the substrate W after the pre-processing is measured. Hereinafter, the thickness of the substrate W before immersion refers to the thickness of the substrate W after the pre-processing and before immersion. The information representing the thickness distribution of the substrate W before immersion can be used as learning data for machine learning.

[0203] Next, in process S5, the control unit 221 obtains the processing amount of the substrate W before immersion in the alkaline treatment solution LQ based on the measurement results of the thickness measurement unit 210. Specifically, the control unit 221 obtains the processing amount of the substrate W performed by the pre-processing by calculating the difference between the thickness of the substrate W before the pre-processing and the thickness of the substrate W before immersion (after the pre-processing). As a result, the distribution of the processing amount of the substrate W performed by the pre-processing is obtained. The storage unit 223 stores information representing the distribution of the processing amount of the substrate W (substrate W before immersion) performed by the pre-processing. The processing amount of the substrate W, for example, represents the etching amount of the substrate W. The information representing the distribution of the processing amount of the substrate W (substrate W before immersion) performed by the pre-processing is used as learning data for machine learning.

[0204] Next, in step S6, the substrate holding unit 120 immerses multiple substrates W in the alkaline treatment solution LQ stored in the treatment tank 110. In this case, while the substrates W are immersed in the alkaline treatment solution LQ, the bubble supply unit 200 supplies bubbles BB from below the substrates W to the alkaline treatment solution LQ through each of the multiple bubble holes G provided in the bubble supply pipe 21. In step S6, bubbles BB are supplied from all the bubble supply pipes 21. After step S6 is performed only for a second specific time, the process proceeds to step S7. Step S6 corresponds to an example of the "immersion step" of the present invention.

[0205] Next, in step S7, the bubble adjustment unit 180 adjusts the bubbles BB supplied from each bubble supply pipe 21 according to the distribution of the processing amount of the substrate W before immersion in the alkaline treatment solution LQ. Specifically, the bubble adjustment unit 180 adjusts the bubbles BB for each bubble supply pipe 21. More specifically, the bubble adjustment unit 180 adjusts the bubbles BB for each bubble supply pipe 21 by controlling the control object CN for adjusting the bubbles BB. The control object CN includes at least one of the flow rate of gas GA, the supply timing of gas GA, and the supply period of gas GA. After the adjustment of the bubbles BB is determined in step S7, the process proceeds to step S8 when the immersion at the third specific time is completed. "Determining the adjustment of bubbles BB" means that the setting of each bubble adjustment mechanism 182 of the bubble adjustment unit 180 is completed. Step S7 corresponds to an example of the "bubble adjustment step" of the present invention.

[0206] Next, in process S8, the substrate holding section 120 lifts a plurality of substrates W from the alkaline treatment solution LQ stored in the treatment tank 110.

[0207] Next, in process S9, the thickness measurement unit 210 measures the thickness of the substrate W after it has been immersed in the alkaline treatment solution LQ. "After substrate W is immersed" means "after the substrate W has been immersed and the processing is completed, and after the substrate W has been removed from the alkaline treatment solution LQ". Specifically, after removing the substrate W, the thickness measurement unit 210 measures the thickness distribution (in-plane distribution) of the substrate W. The storage unit 223 stores information indicating the thickness distribution of the substrate W after immersion. More specifically, the thickness of the substrate W is the thickness of the object TG constituting the substrate W. The information indicating the thickness distribution of the substrate W after immersion can be used as learning data for machine learning. Furthermore, the storage unit 223 stores information on the control object CN (flow rate of gas GA, gas GA supply timing, and gas GA supply period) for each bubble supply pipe 21 (each bubble adjustment mechanism 182). The information on the control object CN is used as learning data for machine learning.

[0208] Next, in process S10, the control unit 221 obtains the processing amount of the substrate W after immersion in the alkaline treatment solution LQ based on the measurement results of the thickness measurement unit 210. "After substrate W is immersed" means "after the substrate W is immersed, the processing is completed, and the substrate W is lifted from the alkaline treatment solution LQ". Specifically, the control unit 221 obtains the processing amount of the substrate W performed by immersion by calculating the difference between the thickness of the substrate W before immersion and the thickness of the substrate W after immersion. As a result, a distribution of the processing amount of the substrate W performed by immersion can be obtained. The processing amount of the substrate W, for example, represents the etching amount of the substrate W. The storage unit 223 stores information representing the distribution of the processing amount of the substrate W after immersion. This information representing the distribution of the processing amount of the substrate W after immersion is used as learning data for machine learning. After process S10, the process proceeds to process S3.

[0209] The above is for reference only. Figure 10 As explained, according to the substrate treatment method of Embodiment 1, while supplying air bubbles BB, the substrate W is treated with an alkaline treatment solution LQ. This reduces the dissolved oxygen concentration in the alkaline treatment solution LQ. As a result, the substrate W can be effectively treated with the alkaline treatment solution LQ.

[0210] Furthermore, in the substrate processing method of Embodiment 1, the bubbles BB are adjusted for each bubble supply pipe 21. Therefore, the amount and / or number of bubbles BB can be adjusted for each bubble supply pipe 21 based on the distribution of the substrate W's processing volume before impregnation. As a result, the distribution of dissolved oxygen concentration in the alkaline treatment solution LQ can be controlled based on the distribution of the substrate W's processing volume before impregnation. Therefore, the processing volume using the alkaline treatment solution LQ can be adjusted based on the distribution of the substrate W's processing volume before impregnation, thereby improving the in-plane uniformity of the substrate W's processing volume.

[0211] Next, refer to Figure 11 The contact angles θa1 and θa2 of the bubble supply pipe 21, which represent hydrophilicity, will be explained. Figure 11 (a) is a diagram showing an example of the contact angle θa1 (hydrophilicity) of the raw material SL1 of the bubble supply pipe 21 in the gas GS.

[0212] like Figure 11As shown in (a), the raw material SL1 of the preferred bubble supply tube 21 is hydrophilic. That is, the bubble supply tube 21 is preferably hydrophilic. Hydrophilicity indicates that the contact angle θa1 does not reach 90 degrees. The contact angle θa1 is the contact angle of the raw material SL1 of the bubble supply tube 21 relative to the alkaline treatment liquid LQ. Specifically, the contact angle θa1 is the contact angle of the gas GS, the alkaline treatment liquid LQ, and the raw material SL1 (bubble supply tube 21) at the contact point. The gas GS is, for example, air or an inert gas. The inert gas is, for example, nitrogen or argon.

[0213] Alternatively, the contact angle θa1 of the raw material SL1 of the bubble supply pipe 21 can be defined as the contact angle of the bubble supply pipe 21 relative to the water. The water is, for example, pure water. Even when the contact angle θa1 is defined as the contact angle of the bubble supply pipe 21 relative to the water, it is preferable that the contact angle θa1 does not reach 90 degrees.

[0214] Next, the contact angle θa2 in the alkaline treatment solution LQ will be explained. Figure 11 (b) is a diagram showing the contact angle θa2 (hydrophilicity) of the bubble supply pipe 21 in the alkaline treatment solution LQ.

[0215] like Figure 11 (b) As shown, in Embodiment 1, bubbles BB are supplied to the alkaline treatment liquid LQ through the bubble hole G of the bubble supply pipe 21. This results in interfaces between the bubbles BB and the alkaline treatment liquid LQ, between the bubbles BB and the bubble supply pipe 21, and between the bubble supply pipe 21 and the alkaline treatment liquid LQ. Consequently, a contact angle θa2 exists between the bubble supply pipe 21 and the alkaline treatment liquid LQ. That is, a contact angle θa2 exists between the raw material SL1 of the bubble supply pipe 21 and the alkaline treatment liquid LQ. Specifically, the contact angle θa2 is the contact angle of the bubbles BB, the alkaline treatment liquid LQ, and the bubble supply pipe 21 at the contact point.

[0216] The contact angle θa2 in the alkaline treatment solution LQ Figure 11 (b) shows the contact angle θa1 in gas GS. Figure 11 (a)). That is, the contact angle θa2 is equal to the contact angle θa1. Therefore, when it is not necessary to distinguish between the contact angle θa1 and the contact angle θa2, the contact angle θa1 and the contact angle θa2 are sometimes referred to individually or collectively as "contact angle θa".

[0217] The above, such as Figure 11 (a) and Figure 11 As shown in (b), when the bubble supply pipe 21 is hydrophilic, it can, for example, suppress the flow of air from the first direction D10 (…). Figure 5 Two adjacent bubble holes G () Figure 5 Bubbles BB supplied from one bubble hole G and bubbles BB supplied from another bubble hole G combine on the surface of the bubble supply pipe 21. As a result, the generation of relatively large-volume bubbles BB can be suppressed. Thus, the supply of relatively large-volume bubbles BB to the alkaline treatment solution LQ can be suppressed. That is, relatively small-volume bubbles BB can be supplied to the alkaline treatment solution LQ from each of the multiple bubble holes G. As a result, the dissolved oxygen concentration in the alkaline treatment solution LQ can be reduced more effectively. As a result, the substrate W immersed in the alkaline treatment solution LQ can be processed (e.g., etched) more effectively through the alkaline treatment solution LQ. That is, the amount of substrate W processed (e.g., the amount of etching) using the alkaline treatment solution LQ can be increased.

[0218] Furthermore, by applying alkaline treatment solution LQ to multiple bubble pores G ( Figure 5 Each of the supplied air bubbles BB has a relatively small volume (size), which allows for more efficient replacement of the alkaline treatment solution LQ in contact with the surface of the substrate W with fresh alkaline treatment solution LQ. As a result, when a surface pattern including recesses is formed on the surface of the substrate W, the alkaline treatment solution LQ within the recesses can be more effectively replaced with fresh alkaline treatment solution LQ by diffusion. Therefore, the walls within the recesses of the surface pattern can be processed (e.g., etched) more effectively from shallower to deeper positions using the alkaline treatment solution LQ.

[0219] Furthermore, by applying the alkaline treatment solution LQ to multiple bubble pores G ( Figure 5 Each of the supplied bubbles BB has a relatively small volume (size), which can effectively suppress uneven processing volume in the substrate W plane and also effectively suppress uneven processing volume between batches of substrate W.

[0220] In particular, the higher the hydrophilicity of the bubble supply pipe 21, the better. That is, the smaller the contact angle θa of the bubble supply pipe 21, the better. According to its preferred embodiment, for example, it is possible to more effectively suppress the flow of air from the bubble supply pipe 21 in the first direction D10 (… Figure 5 Two adjacent bubble holes G () Figure 5 Bubbles BB supplied from one bubble hole G and another bubble BB supplied from another bubble hole G combine on the surface of the bubble supply pipe 21. As a result, smaller volume (size) bubbles BB can be supplied to the alkaline treatment solution LQ from each of the multiple bubble holes G. Thus, it is possible to more effectively process the substrate W, more effectively process from shallower to deeper positions of the substrate W, more effectively suppress uneven processing volume within the surface of the substrate W, and more effectively suppress uneven processing volume between batches of the substrate W.

[0221] Specifically, the contact angle θa of the bubble supply tube 21 is more preferably 85 degrees or less, more preferably 80 degrees or less, more preferably 75 degrees or less, more preferably 70 degrees or less, more preferably 65 degrees or less, more preferably 60 degrees or less, more preferably 55 degrees or less, more preferably 50 degrees or less, more preferably 45 degrees or less, more preferably 40 degrees or less, more preferably 35 degrees or less, more preferably 30 degrees or less, more preferably 25 degrees or less, more preferably 20 degrees or less, more preferably 15 degrees or less, more preferably 10 degrees or less, and more preferably 5 degrees or less.

[0222] For example, the preferred raw material SL1 for the bubble supply tube 21 is PEEK (polyetheretherketone). The contact angle θa of PEEK is approximately 80 degrees. Thus, by making the raw material SL1 of the bubble supply tube 21 PEEK, hydrophilicity can be easily imparted to the bubble supply tube 21.

[0223] For example, it is preferable that the raw material SL1 of the bubble supply tube 21 is quartz. The contact angle θa of quartz is about 10 degrees. In this way, by making the raw material SL1 of the bubble supply tube 21 quartz, the bubble supply tube 21 can be endowed with higher hydrophilicity.

[0224] In addition, it is preferable that the bubble supply pipe 21 is hydrophilic, but the bubble supply pipe 21 may also be hydrophobic.

[0225] Next, refer to Figure 12 The contact angles θb1 and θb2 of the bubble supply pipe 21, which represents hydrophobicity, will be explained. Figure 12 (a) is a diagram showing an example of the contact angle θb1 (hydrophobicity) of the raw material SL2 in the bubble supply pipe 21 in the gas GS.

[0226] like Figure 12 As shown in (a), the raw material SL2 of the bubble supply pipe 21 can also be hydrophobic. That is, the bubble supply pipe 21 can also be hydrophobic. Being hydrophobic means that the contact angle θb1 is 90 degrees or more. The contact angle θb1 is the contact angle of the raw material SL2 of the bubble supply pipe 21 relative to the alkaline treatment liquid LQ. That is, the contact angle θb1 is the contact angle of the bubble supply pipe 21 relative to the alkaline treatment liquid LQ. Specifically, the contact angle θb1 is the contact angle of the gas GS, the alkaline treatment liquid LQ, and the raw material SL2 (bubble supply pipe 21) at the contact point.

[0227] Alternatively, the contact angle θb1 of the raw material SL2 of the bubble supply pipe 21 can be defined as the contact angle of the bubble supply pipe 21 relative to the water. The water is, for example, pure water. Even when the contact angle θb1 is defined as the contact angle of the bubble supply pipe 21 relative to the water, the contact angle θb1 can be 90 degrees or more.

[0228] Next, the contact angle θb2 in the alkaline treatment solution LQ will be explained. Figure 12 (b) is a diagram showing the contact angle θb2 (hydrophobicity) of the bubble supply pipe 21 in the alkaline treatment solution LQ.

[0229] like Figure 12 (b) As shown, in Embodiment 1, bubbles BB are supplied to the alkaline treatment liquid LQ through the bubble hole G of the bubble supply pipe 21. This results in interfaces between the bubbles BB and the alkaline treatment liquid LQ, between the bubbles BB and the bubble supply pipe 21, and between the bubble supply pipe 21 and the alkaline treatment liquid LQ. Consequently, a contact angle θb2 exists between the bubble supply pipe 21 and the alkaline treatment liquid LQ. That is, a contact angle θb2 exists between the raw material SL2 of the bubble supply pipe 21 and the alkaline treatment liquid LQ. Specifically, the contact angle θb2 is the contact angle of the bubbles BB, the alkaline treatment liquid LQ, and the bubble supply pipe 21 at the contact point.

[0230] The contact angle θb2 in the alkaline treatment solution LQ Figure 12 (b) shows the contact angle θb1 in gas GS. Figure 12 (a)). That is, the contact angle θb2 is equal to the contact angle θb1. Therefore, when it is not necessary to distinguish between the contact angles θb1 and θb2, the contact angles θb1 and θb2 are sometimes referred to individually or collectively as "contact angle θb".

[0231] For example, the raw material SL2 for the bubble supply pipe 21 can also be PFA (tetrafluoroethylene-perfluoroalkyl vinyl ether copolymer). The contact angle θb of PFA is approximately 110 degrees.

[0232] (Implementation Method 2)

[0233] refer to Figure 1 and Figures 13-16 The substrate processing apparatus 100 according to Embodiment 2 of the present invention will be described. The main difference between Embodiment 1 and Embodiment 2 is that, in Embodiment 2, the bubbles BB from each bubble supply pipe 21 are adjusted using a learned model LM. Hereinafter, the differences between Embodiment 2 and Embodiment 1 will be mainly described.

[0234] Figure 13 This is a block diagram showing the control device 220 of the substrate processing apparatus 100 in Embodiment 2. The control device 220 is, for example, a computer. Figure 13As shown, the control device 220 includes a control unit 221, a storage unit 223, a communication unit 225, an input unit 227, and a display unit 229. The communication unit 225 is connected to a network and communicates with external devices. The network includes, for example, the Internet, a LAN, a public telephone network, and a short-range wireless network. The communication unit 225 is a communication device, such as a network interface controller. The communication unit 225 may also have a wired communication module or a wireless communication module. The input unit 227 is an input device used to input various information to the control unit 221. For example, the input unit 227 is a keyboard and pointing device, or a touch panel. The display unit 229 displays images. The display unit 229 is, for example, a liquid crystal display (LCD) or an organic light-emitting diode (OLED) display.

[0235] Storage unit 223 stores control program PG1, recipe information RC, and the learned model LM. Control unit 221 processes substrate W with alkaline treatment solution LQ according to recipe information RC by executing control program PG1. Recipe information RC specifies the processing content and steps for substrate W. Specifically, control unit 221 controls storage unit 223, communication unit 225, input unit 227, and display unit 229 by executing control program PG1. Figure 1 The components shown include a substrate holding section 120, a processing liquid introduction section 130, a circulation section 140, a processing liquid supply section 150, a diluent supply section 160, a drain section 170, a bubble adjustment section 180, an exhaust piping section 190, a bubble supply section 200, and a thickness measurement section 210. Furthermore, the control section 221 initiates the learning completed model LM by executing the control program PG1.

[0236] The learned model LM is constructed by learning from the learning data (hereinafter, "learning data DT").

[0237] The learning data DT includes pre-immersion processing information K1 and post-immersion processing information K2. Pre-immersion processing information K1 represents physical quantities indicating the amount of processing performed on the learning substrate Wa before immersion in the alkaline treatment solution LQ. The composition of the learning substrate Wa is the same as that of substrate W. The physical quantities representing the amount of processing performed on the learning substrate Wa before immersion in the alkaline treatment solution LQ are the same as those representing the amount of processing performed on substrate W before immersion in the alkaline treatment solution LQ. Post-immersion processing information K2 represents physical quantities indicating the amount of processing performed on the learning substrate Wa after immersion in and removal from the alkaline treatment solution LQ. The physical quantities representing the amount of processing performed on the learning substrate Wa after immersion in and removal from the alkaline treatment solution LQ are the same as those representing the amount of processing performed on substrate W after immersion in and removal from the alkaline treatment solution LQ.

[0238] When the learning object substrate Wa is immersed in the alkaline treatment solution LQ, the learning data DT also includes at least one of the following: flow rate information M1 indicating the flow rate of gas GA supplied to the bubble supply tube 21, timing information M2 indicating the timing of gas GA supply to the bubble supply tube 21, and period information M3 indicating the period of gas GA supply to the bubble supply tube 21.

[0239] Pre-impregnation processing information K1 is an explanatory variable. That is, pre-impregnation processing information K1 is a characteristic quantity. Post-impregnation processing information K2, flow rate information M1, timing information M2, and period information M3 are target variables. For example, a "normal label" is attached to the target variables. That is, among the target variables, the flow rate information M1, timing information M2, and period information M3 are information indicating a "normal" situation where the "physical quantity representing the processing amount of substrate W" represented by post-impregnation processing information K2 is considered to be normal. The learned model LM in Implementation 2 is generated through "taught" learning.

[0240] The control unit 221 inputs input information IF1 to the learned model LM and obtains output information IF2 from the learned model LM. Input information IF1 includes information on physical quantities representing the amount of processing of the substrate W before immersion in the alkaline treatment solution LQ. Output information IF2 includes information representing the controlled object CN. When the substrate W is immersed in the alkaline treatment solution LQ, the controlled object CN includes at least one of the following: the flow rate of gas GA supplied to the bubble supply pipe 21, the timing of gas GA supply to the bubble supply pipe 21, and the duration of gas GA supply to the bubble supply pipe 21.

[0241] The control unit 221 adjusts the bubbles BB for each bubble supply pipe 21 according to the output information IF2. Specifically, the control unit 221 controls each bubble adjustment mechanism 182 included in the bubble adjustment unit 180 in a manner that is set as indicated by the output information IF2, and controls the controlled object CN for each bubble adjustment mechanism 182. As a result, the bubbles BB are adjusted for each bubble supply pipe 21 according to the distribution of physical quantities representing the amount of substrate W processed before impregnation, and thus the distribution of dissolved oxygen concentration in the alkaline treatment solution LQ can be appropriately adjusted. Therefore, according to Embodiment 2, the in-plane uniformity of the amount of substrate W processed by impregnation in the alkaline treatment solution LQ can be improved.

[0242] Furthermore, since the output information IF2 from the learned model LM is used, the control object CN (gas GA flow rate, gas GA supply timing, and gas GA supply period) can be set with high precision for each bubble supply pipe 21. That is, the control unit 221 can set each bubble adjustment mechanism 182 with high precision, thereby setting the distribution of dissolved oxygen concentration in the alkaline treatment solution LQ of the treatment tank 110, which corresponds to the distribution of the physical quantity representing the processing amount of the substrate W.

[0243] Next, refer to Figure 13 and Figure 14 The substrate processing method of Embodiment 2 will be described. Figure 14 This is a flowchart illustrating the substrate processing method of Embodiment 2. The substrate processing method is performed by the substrate processing apparatus 100. Figure 14 As shown, the substrate processing method includes steps S21 to S32.

[0244] Processes S21 to S25 are respectively with Figure 10 The processes S1 through S5 are identical, so their descriptions are omitted. After process S25, the process proceeds to process S26.

[0245] Next, in step S26, the control unit 221 inputs input information IF1 to the learned model LM. Input information IF1 represents the distribution of the processing amount of the substrate W before immersion in the alkaline treatment solution LQ. Specifically, the information representing the distribution of the processing amount of the substrate W is information about a physical quantity representing the distribution of the processing amount of the substrate W. The storage unit 223 stores the input information IF1. The input information IF1 can be used as learning data for machine learning. Step S26 constitutes part of the "bubble conditioning step" of the present invention.

[0246] Next, in step S27, the control unit 221 obtains output information IF2 from the learned model LM. Output information IF2 includes information representing the controlled object CN. When the substrate W is immersed in the alkaline treatment solution LQ, the controlled object CN includes at least one of the following: the flow rate of gas GA, the gas GA supply timing, and the gas GA supply period. Storage unit 223 stores the output information IF2. Output information IF2 can be used as learning data for machine learning. Step S27 constitutes part of the "bubble adjustment step" of the present invention.

[0247] Next, in step S28, the substrate holding section 120 immerses a plurality of substrates W in the alkaline treatment solution LQ stored in the treatment tank 110. Step S28 corresponds to an example of the "immersion step" of the present invention. Furthermore, step S28 is similar to... Figure 10 The process S6 is the same.

[0248] Next, in step S29, the control unit 221 individually controls each bubble adjustment unit 180 based on the output information IF2 (indicating information about the controlled object CN) obtained from the learned model LM, thereby individually adjusting the bubbles BB from each bubble supply pipe 21. After determining the adjustment of the bubbles BB in step S29, when the impregnation at the third specific time is completed, the process proceeds to step S30. "Determining the adjustment of bubbles BB" means that the setting of each bubble adjustment mechanism 182 of the bubble adjustment unit 180 is completed. Step S29 constitutes part of the "bubble adjustment step" of the present invention.

[0249] Next, processes S30 to S32 are executed. Processes S30 to S32 are respectively connected with... Figure 10 The processes S8 through S10 are the same, so their descriptions are omitted. After process S10, the process proceeds to process S23.

[0250] Next, refer to Figure 15 The learning device 320 of Embodiment 2 will be described. The learning device 320 is, for example, a computer. Figure 15 This is a block diagram representing the learning device 320. (For example...) Figure 15 As shown, the learning device 320 includes a processing unit 321, a storage unit 323, a communication unit 325, an input unit 327, and a display unit 329.

[0251] Processing unit 321 includes processors such as CPU and GPU. Storage unit 323 includes a storage device that stores data and computer programs. The processor in processing unit 321 executes the computer programs stored in the storage device of storage unit 323 to perform various processes. For example, storage unit 323 and storage unit 223 (… Figure 13 Similar to other storage devices, it includes a main storage device and an auxiliary storage device, and may also include a removable medium. Storage unit 323 may be, for example, a non-transitory computer-readable storage medium.

[0252] The communication unit 325 is connected to a network and communicates with external devices. The communication unit 325 is a communication device, such as a network interface controller. The communication unit 325 may also have a wired communication module or a wireless communication module. The input unit 327 is an input device used to input various information to the processing unit 321. For example, the input unit 327 is a keyboard and pointing device, or a touch panel. The display unit 329 displays images. The display unit 329 is, for example, a liquid crystal display (LCD) or an organic light-emitting diode (OLED) display.

[0253] Then, refer to Figure 15The processing unit 321 will be described. The processing unit 321 acquires multiple learning data DTs from an external source. For example, the processing unit 321 acquires multiple learning data DTs from the substrate processing apparatus 100 or the learning data production apparatus of Embodiment 1 or Embodiment 2 via the network and communication unit 325. The learning data production apparatus generates the learning data DTs based on the data acquired from the substrate processing apparatus 100.

[0254] The processing unit 321 controls the storage unit 323 to store each learning data DT. As a result, the storage unit 323 stores each learning data DT.

[0255] Storage Unit 323 stores the learning program PG2. The learning program PG2 is a program used to execute the machine learning algorithm, which is used to find fixed patterns from multiple learning data DT and generate a learned model LM that represents the found patterns.

[0256] Machine learning algorithms are not particularly limited if they involve instruction; for example, they can be decision trees, nearest neighbor algorithms, Naive Bayes classifiers, support vector machines, or neural networks. Therefore, a learned model (LM) can be generated using decision trees, nearest neighbor algorithms, Naive Bayes classifiers, support vector machines, or neural networks. Backpropagation can also be used in machine learning to generate a learned model (LM).

[0257] For example, a neural network includes an input layer, one or more intermediate layers, and an output layer. Specifically, neural networks are deep neural networks (DNNs), recurrent neural networks (RNNs), or convolutional neural networks (CNNs) used for deep learning. For example, a deep neural network includes an input layer, multiple intermediate layers, and an output layer.

[0258] Processing unit 321 performs machine learning on multiple learning data DTs according to learning program PG2. The result is the generation of a fully learned model LM by identifying fixed patterns from the multiple learning data DTs. That is, the fully learned model LM is constructed through machine learning on the learning data DTs. Storage unit 323 stores the fully learned model LM.

[0259] Specifically, the control unit 221 generates the learned model LM by executing the learning program PG2 to find the fixed pattern between the explanatory variables and the target variables contained in the learning data DT.

[0260] More specifically, the processing unit 321 performs machine learning on multiple learning data DTs according to the learning program PG2, thereby calculating multiple learning completion parameters and generating a learned model LM containing one or more functions, which apply the multiple learning completion parameters. The learning completion parameters are parameters (coefficients) obtained based on the results of machine learning using the multiple learning data DTs.

[0261] The learned model LM enables the computer to function by taking input information IF1 as input and output information IF2 as output. In other words, the learned model LM takes input information IF1 as input and outputs information IF2 as output. Specifically, the learned model LM estimates the information of the control object CN when the in-plane uniformity of the processed amount of the substrate W after impregnation meets the fixed reference.

[0262] Next, refer to Figure 15 and Figure 16 The learning method of Implementation Method 2 will be explained. Figure 16 This is a flowchart illustrating the learning method of implementation method 2. For example... Figure 16 As shown, the learning method includes steps S41 to S44. The learning method is executed by the learning device 320.

[0263] like Figure 15 and Figure 16 As shown, in process S41, the processing unit 321 of the learning device 320 acquires multiple learning data DTs from the substrate processing device 100 or the learning data production device.

[0264] Next, in process S42, the processing unit 321 performs machine learning on multiple learning data DT according to the learning program PG2.

[0265] Next, in process S43, the processing unit 321 determines whether the learning termination condition is met. The learning termination condition is a pre-defined condition for ending machine learning. For example, the learning termination condition is that the number of repetitions reaches a predetermined number.

[0266] If a negative decision is made in process S43, the process proceeds to process S41. The result is repeated machine learning.

[0267] On the other hand, if a positive determination is made in process S43, the process proceeds to process S44.

[0268] In process S44, the processing unit 321 outputs the model (one or more functions) with the latest multiple parameters (coefficients), i.e., multiple learned parameters (coefficients), as the learned model LM. Furthermore, the storage unit 323 stores the learned model LM.

[0269] The learning model LM is generated by executing steps S41 to S44 through the learning device 320.

[0270] That is, according to Embodiment 2, the learning device 320 performs machine learning. Therefore, it is possible to identify patterns in the very complex and large-scale learning data DT to create a high-precision learned model LM. Furthermore, Figure 13 The control unit 221 of the control device 220 shown inputs input information IF1, including the distribution of the processing amount of the substrate W before impregnation, to the learned model LM, and outputs output information IF2, including information of the controlled object CN, from the learned model LM. This allows for high-speed execution of the settings of each bubble adjustment mechanism 182, thereby enabling high-speed adjustment of the bubbles BB in each bubble supply pipe 21.

[0271] in addition, Figure 1 and Figure 13 The control device 220 can also be used as Figure 15 The learning device 320 is used for operation.

[0272] (Implementation Method 3)

[0273] refer to Figure 1 , Figure 13 and Figure 17 The substrate processing apparatus 100 according to Embodiment 3 of the present invention will be described. The main difference between Embodiment 3 and Embodiment 2 is that, in Embodiment 3, learning without instruction is performed. Hereinafter, the differences between Embodiment 3 and Embodiment 2 will be mainly described.

[0274] First, refer to Figure 1 and Figure 13 The following explanation is provided. Control unit 221 initiates the completed learning model LM by executing control program PG1. The completed learning model LM is constructed by learning from the learning data DT. The learning data DT is the same as the learning data DT in Embodiment 1, therefore, its explanation is omitted.

[0275] The control unit 221 inputs the input information IF3 to the learned model LM and obtains the output information IF4 from the learned model LM. The learned model LM clusters the input information IF3 and outputs the output information IF4, which represents the clustering results of the input information IF3. Specifically, the output information IF4 represents the clusters obtained by classifying the input information IF3. Clustering is the process of identifying similar or related information and grouping such information together. Thus, similar or related information is classified into one cluster through clustering.

[0276] Input information IF3 includes information on physical quantities representing the amount of substrate W processed before immersion in alkaline treatment solution LQ, and information representing the control object CN. When substrate W is immersed in alkaline treatment solution LQ, the control object CN includes at least one of the following: the flow rate of gas GA supplied to each bubble supply pipe 21, the timing of gas GA supply to each bubble supply pipe 21, and the duration of gas GA supply to each bubble supply pipe 21. In Embodiment 3, the information on the control object CN included in input information IF3 is information on a previously used control object CN used when processing substrate W by immersion. For example, the information on the control object CN included in input information IF3 is information on the previous control object CN used when processing substrate W by immersion.

[0277] The control unit 221 controls the controlled object CN based on the output information IF4. Specifically, when the clustering result of the input information IF3 represented by the output information IF4 is classified into a cluster representing "normal processing", the control unit 221 uses the information of the previous controlled object CN (e.g., the previous controlled object CN used in the last processing) represented by the input information IF3 to control each bubble adjustment mechanism 182, thereby controlling the bubbles BB from each bubble supply pipe 21.

[0278] That is, the control unit 221 controls each bubble adjustment mechanism 182 in a manner that corresponds to the previous setting (e.g., the last setting) indicated by the input information IF3, thereby adjusting the bubbles BB for each bubble supply pipe 21. As a result, by adjusting the bubbles BB for each bubble supply pipe 21 according to the distribution of physical quantities representing the processing amount of the substrate W before impregnation, the distribution of dissolved oxygen concentration in the alkaline treatment solution LQ can be appropriately adjusted. Thus, according to Embodiment 3, the in-plane uniformity of the processing amount of the substrate W performed by impregnation in the alkaline treatment solution LQ can be improved.

[0279] Furthermore, when the clustering result of the input information IF3, represented by the output information IF4, is classified as a cluster representing "normal processing", it is not necessary to reset each bubble adjustment mechanism 182, thus improving the processing capacity of the substrate W.

[0280] Next, refer to Figure 13 and Figure 17 The substrate processing method of Embodiment 3 will be described. Figure 17 This is a flowchart illustrating the substrate processing method of Embodiment 3. The substrate processing method is performed by the substrate processing apparatus 100. Figure 17 As shown, the substrate processing method includes steps S51 to S62.

[0281] Processes S51 to S55 are respectively with Figure 10The processes S1 through S5 are the same, so their descriptions are omitted. After process S55, the process proceeds to process S56.

[0282] Next, in step S56, the control unit 221 inputs input information IF3 to the learned model LM. Input information IF3 includes information indicating the distribution of the processing volume of the substrate W before immersion in the alkaline treatment solution LQ, and information indicating the control object CN. Specifically, the information indicating the distribution of the processing volume of the substrate W is information about a physical quantity representing the distribution of the processing volume of the substrate W. The control object CN, when the substrate W is immersed in the alkaline treatment solution LQ, includes at least one of the flow rate of gas GA, the supply timing of gas GA, and the supply period of gas GA. The storage unit 223 stores the input information IF3. The input information IF3 can be used as learning data for machine learning. Step S56 constitutes part of the "bubble conditioning step" of the present invention.

[0283] Next, in step S57, the control unit 221 obtains output information IF4 from the learned model LM. Output information IF4 includes information representing the clustering results of input information IF3. Storage unit 223 stores output information IF4. Output information IF4 can be used as learning data for machine learning. Step S57 constitutes part of the "bubble adjustment step" of the present invention.

[0284] Next, in step S58, the substrate holding section 120 immerses a plurality of substrates W in the alkaline treatment solution LQ stored in the treatment tank 110. Step S58 corresponds to an example of the "immersion step" of the present invention. Furthermore, step S58 is similar to... Figure 10 The process S6 is the same.

[0285] Next, in step S59, the control unit 221 individually controls each bubble adjustment unit 180 based on the output information IF2 (information representing the clustering result) obtained from the learned model LM, thereby controlling the controlled object CN for each bubble supply pipe 21. By individually controlling the controlled object CN for each bubble supply pipe 21, the bubbles BB from each bubble supply pipe 21 are individually adjusted. When the impregnation at the third specific time is completed, the process proceeds to step S60. Step S59 constitutes part of the "bubble adjustment step" of the present invention.

[0286] Next, processes S60 to S62 are executed. Processes S60 to S62 are respectively connected with... Figure 10 The processes S8 through S10 are the same, so their descriptions are omitted. After process S62, the process proceeds to process S53.

[0287] Here, for reference Figure 15 The learning device 320 of Embodiment 3 will be described. Figure 15 The learning program PG2 shown is a program used to execute a machine learning algorithm, which is used to find fixed patterns from multiple learning data DT and generate a learned model LM that represents the found patterns.

[0288] In implementation method 3, the machine learning algorithm is a learning algorithm without instruction, such as k-means, k-centroids, hierarchical clustering, self-organizing map, fuzzy c-means, Gaussian mixture model, or neural network.

[0289] Processing unit 321 performs machine learning on multiple learning data DT according to learning program PG2. The result is that a fixed pattern is found from the multiple learning data DT to generate a fully learned model LM.

[0290] Specifically, the processing unit 321 performs machine learning on multiple learning data DTs according to the learning program PG2, thereby calculating multiple learning completion parameters and generating a learning completion model LM containing one or more functions, which apply the multiple learning completion parameters. The learning completion parameters are parameters (coefficients) obtained based on the results of machine learning using multiple learning data DTs.

[0291] Furthermore, the processing flow of the learning method in Implementation Method 3 is similar to... Figure 16 The learning method of Implementation Method 2 shown has the same process.

[0292] The present invention will now be described in detail based on embodiments, but the present invention is not limited to the following embodiments.

[0293] [Example]

[0294] (Example 1, Example 2)

[0295] refer to Figures 18-20 Embodiments 1 and 2 of the present invention will be described. In embodiments 1 and 2 of the present invention, references are used. Figure 1 and Figures 4-6 The substrate processing apparatus 100 is described below. In embodiments 1 and 2, the number of bubble supply pipes 21, the number of piping 181, and the number of bubble adjustment mechanisms 182 are the same as in the reference. Figure 1 and Figures 4-6 The substrate processing apparatus 100 described is different.

[0296] Figure 18 This is a schematic cross-sectional view illustrating the substrate processing apparatus 100A of Embodiments 1 and 2 of the present invention. Figure 18As shown, in the substrate processing apparatus 100A, the bubble supply unit 200A includes eight bubble supply pipes 21. Furthermore, the bubble adjustment unit 180A includes eight bubble adjustment mechanisms 182. Additionally, the substrate processing apparatus 100A has eight pipes 181. The alkaline treatment solution LQ is TMAH. The concentration of TMAH is 0.31%. The gas GA supplied from the pipes 181 to the bubble supply pipes 21 is nitrogen. The nitrogen flow rate, which is the sum of the flow rates of the eight pipes 181 (eight bubble supply pipes 21), is 30 L / min.

[0297] Before immersing substrate W in alkaline treatment solution LQ, thickness measurement unit 210 measures the thickness of the polysilicon film on substrate W. Then, one hour after the supply of bubbles BB to alkaline treatment solution LQ begins, a batch (25 pieces) of substrate W is immersed in alkaline treatment solution LQ. The immersion time is 140 seconds. After the immersion time has elapsed, substrate W is removed from alkaline treatment solution LQ. Then, the thickness of the polysilicon film on substrate W is measured by thickness measurement unit 210. Furthermore, control unit 221 obtains the etching amount of substrate W by subtracting the thickness of substrate W after removal from alkaline treatment solution LQ from the thickness of the polysilicon film on substrate W before immersion. Then, control unit 221 generates mapping images MP1 and MP2 representing the distribution of the etching amount of substrate W.

[0298] In Embodiment 1 of the present invention, the supply of bubbles BB from bubble supply pipes 21b, 21d, 21e, and 21g out of the eight bubble supply pipes 21a to 21h is stopped, while bubbles BB are supplied from bubble supply pipes 21a, 21c, 21f, and 21h. That is, in Embodiment 1, four bubble supply pipes 21 are used.

[0299] Figure 19 This is a diagram showing the processing result of substrate W in Embodiment 1 of the present invention. Figure 19 The image MP1 represents the etching amount of substrate W. In the image MP1, the sparser the dots, the greater the etching amount. In addition, the image MP1 actually contains grayscale values ​​representing the etching amount, but it has been simplified and represented by 5 stages.

[0300] As can be understood from the mapped image MP1, the unevenness of the etching amount converges within the range of 19.854 angstroms to 22.672 angstroms. That is, etching can be effectively performed by reducing the dissolved oxygen concentration in the alkaline treatment solution LQ by supplying bubbles BB from the four bubble supply pipes 21.

[0301] In Example 1, the difference between the maximum etching amount (22.672 angstroms) and the minimum etching amount (19.854 angstroms) is 2.818 angstroms.

[0302] On the other hand, in Embodiment 2 of the present invention, bubbles BB are supplied from all eight bubble supply pipes 21a to 21h. That is, in Embodiment 2, eight bubble supply pipes 21 are used.

[0303] Figure 20 This is a diagram showing the processing result of substrate W in Embodiment 2 of the present invention. Figure 20 The image MP2 represents the etching amount of substrate W. In the image MP2, the sparser the dots, the greater the etching amount. Additionally, the image MP2 actually contains grayscale values ​​representing the etching amount, but this has been simplified and represented by five stages.

[0304] As can be understood from the mapped image MP2, the unevenness of the etching amount converges within the range of above 21.729 angstroms and below 22.61 angstroms. That is, etching can be performed more effectively by further reducing the dissolved oxygen concentration in the alkaline treatment solution LQ by supplying bubbles BB from the eight bubble supply pipes 21.

[0305] In Example 2, the difference between the maximum etching amount (22.61 angstroms) and the minimum etching amount (21.729 angstroms) is 0.881 angstroms.

[0306] As can be understood from the comparison results of Example 1 and Example 2, the difference between the maximum and minimum etching amounts in Example 2 (0.881 Å) is less than the difference between the maximum and minimum etching amounts in Example 1 (2.818 Å). That is, the in-plane uniformity of the etching amount of the substrate W in Example 2 is better than the in-plane uniformity of the etching amount of the substrate W in Example 1.

[0307] That is, the more bubble supply tubes 21 supplying the bubbles BB, the higher the in-plane uniformity of the etching amount of the substrate W. It is speculated that the more bubble supply tubes 21 supplying the bubbles BB, the more bubbles BB rise in the alkaline treatment solution LQ, thereby reducing the dissolved oxygen concentration.

[0308] (Examples 3, 4, and 5)

[0309] refer to Figure 21 and Figure 22 Examples 3 to 5 of the present invention will be described. In Examples 3 to 5, an approximate model of the bubble supply pipe 21 is created, and the generation behavior of the bubbles BB is simulated using the VOF (Volume of Fluid) method. The VOF method is an analytical method for free surface flow.

[0310] Figure 21 (a) is a perspective view of the simulation model MD of embodiments 3 to 5 of the present invention. Figure 21 (b) is a front view of the simulation model MD of embodiments 3 to 5 of the present invention.

[0311] like Figure 21 As shown in (a), the simulation model MD includes a bubble supply pipe model 21m and an alkaline treatment liquid model LQm. The bubble supply pipe model 21m is an approximate model of the outer wall of the bubble supply pipe 21. The bubble supply pipe model 21m does not include the thickness element of the bubble supply pipe 21. The bubble supply pipe model 21m has a ring shape. The diameter of the bubble supply pipe model 21m is 6 mm. The bubble supply pipe model 21m has two bubble hole models Gm1 and Gm2. Each of the bubble hole models Gm1 and Gm2 is circular and is an approximate model of the bubble hole G. The diameter of each of the bubble hole models Gm1 and Gm2 is 0.2 mm.

[0312] like Figure 21 As shown in (b), the central angle θx of the arc AC connecting the bubble hole model Gm1 and the bubble hole model Gm2 is 105 degrees.

[0313] The alkaline treatment solution model LQm is an approximate model of the alkaline treatment solution LQ. Specifically, the alkaline treatment solution model LQm is an approximate model of TMAH. The bubble supply pipe model 21m is configured within the alkaline treatment solution model LQm.

[0314] In Examples 3-5, the generation behavior of bubble BB was simulated by generating bubble model BBm from bubble models Gm1 and Gm2. Bubble model BBm is an approximate model of bubble BB containing nitrogen. A flow rate of 17 m / s was set as the flow rate of nitrogen used to generate bubble model BBm representing bubble BB.

[0315] Figure 22 (a) is a graph showing the simulation results of Example 3. Figure 22 (a) is the state 0.95 seconds after the bubble model BBM was first generated.

[0316] like Figure 22 As shown in (a), in Example 3, the bubble supply pipe model 21m is hydrophobic. Specifically, the contact angle θb2 of the bubble supply pipe model 21m relative to the alkaline treatment liquid model LQm is... Figure 12 (b) is set to 110 degrees. That is, the contact angle θb2 of the bubble supply pipe 21 is set to 110 degrees to simulate the generation behavior of the bubble BB.

[0317] In Example 3, bubble model BBm supplied from bubble model Gm1 and bubble model BBm supplied from bubble model Gm2 combine on the surface of bubble supply pipe model 21m to generate one bubble model BBm. In Example 3, bubble models Gm1 and Gm2 arranged along the circumferential direction of bubble supply pipe model 21m are used for simulation, but for bubble G along the first direction D10 (… Figure 5 The arrangement of the bubble supply pipes 21 suggests that the generation behavior of bubbles BB is also the same. Therefore, in Example 3, when the bubble supply pipes 21 are hydrophobic, it can be inferred that the generation behavior of bubbles BB from adjacent bubble holes G ( Figure 5 The separately supplied bubbles BB easily combine on the outer wall of the bubble supply pipe 21 in the alkaline treatment solution LQ.

[0318] Figure 22 (b) is a graph showing the simulation results of Example 4. Figure 22 (b) indicates the state 0.95 seconds after the bubble model BBM was first generated.

[0319] like Figure 22 As shown in (b), in Example 4, the bubble supply pipe model 21m is hydrophilic. Specifically, the contact angle θa2 of the bubble supply pipe model 21m relative to the alkaline treatment liquid model LQm is set to 80 degrees. Figure 11 (b) That is, the contact angle θa2 of the bubble supply pipe 21 is set to 80 degrees to simulate the generation behavior of the bubble BB.

[0320] In Example 4, bubble models BBm supplied from bubble model Gm1 and Gm2 are separated on the surface of bubble supply pipe model 21m. In Example 4, bubble models Gm1 and Gm2, arranged along the circumferential direction of bubble supply pipe model 21m, are used for simulation, but for bubble G along the first direction D10 (… Figure 5 The arrangement of the bubble supply pipes 21 suggests that the generation behavior of bubbles BB is also the same. Therefore, based on Example 4, it can be deduced that when the bubble supply pipes 21 are hydrophilic, bubbles BB are generated from adjacent bubble holes G (…). Figure 5 The individually supplied bubbles BB tend to separate on the outer wall of the bubble supply pipe 21 in the alkaline treatment solution LQ. That is, when the bubble supply pipe 21 is hydrophilic, the bubbles BB tend to separate on the outer wall of the bubble supply pipe 21 in the alkaline treatment solution LQ compared to when the bubble supply pipe 21 is hydrophobic. Therefore, when the bubble supply pipe 21 is hydrophilic, compared to when the bubble supply pipe 21 is hydrophobic, it can be inferred that the average volume (size) of the multiple bubbles BB supplied from the multiple bubble holes G is smaller.

[0321] Figure 22 (c) is a graph showing the simulation results of Example 5. Figure 22 (c) represents the state 0.95 seconds after the bubble model BBM was first generated.

[0322] like Figure 22As shown in (c), in Example 5, the bubble supply pipe model 21m is hydrophilic. Specifically, the contact angle θa2 of the bubble supply pipe model 21m relative to the alkaline treatment liquid model LQm is set to 10 degrees. Figure 11 (b) That is, the contact angle θa2 of the bubble supply pipe 21 is set to 10 degrees to simulate the generation behavior of bubble BB.

[0323] In Example 5, bubble models BBm supplied from bubble model Gm1 and Gm2 are separated on the surface of bubble supply tube model 21m. In Example 5, compared to Example 4, the distance between bubble models BBm supplied from bubble model Gm1 and Gm2 is greater. Furthermore, in Example 5, the volume (size) of bubble model BBm is smaller than in Example 4. In Example 5, bubble models Gm1 and Gm2, arranged along the circumferential direction of bubble supply tube model 21m, are used for simulation, but for bubble G along the first direction D10 (… Figure 5 The arrangement of the bubble supply pipes 21 suggests that the generation of bubbles BB is also similar. Therefore, based on Example 5, it can be deduced that the smaller the contact angle θa2 of the hydrophilic bubble supply pipe 21, the more bubbles will be generated from adjacent bubble holes G (…). Figure 5 The more easily the supplied bubbles BB separate on the outer wall of the bubble supply pipe 21 in the alkaline treatment solution LQ. As a result, based on Example 5, it can be deduced that the smaller the contact angle θa2 of the hydrophilic bubble supply pipe 21, the smaller the average volume (size) of the multiple bubbles BB supplied from the multiple bubble holes G.

[0324] The embodiments of the present invention have been described above with reference to the accompanying drawings. However, the present invention is not limited to the described embodiments and can be implemented in various forms without departing from its spirit. Furthermore, the various constituent elements disclosed in the embodiments can be appropriately modified. For example, a constituent element from all the constituent elements shown in one embodiment may be added to the constituent elements of another embodiment, or a constituent element from all the constituent elements shown in one embodiment may be deleted from the embodiment.

[0325] Furthermore, in the accompanying drawings, each component is shown schematically as the main element for ease of understanding of the invention. For ease of drawing preparation, the thickness, length, number, spacing, etc., of each component shown may sometimes differ from the actual situation. Moreover, the configuration of each component shown in the described embodiment is an example and is not particularly limited; various modifications can certainly be made without substantially departing from the effects of the invention.

[0326] [Industry availability]

[0327] This invention relates to a substrate processing method and a substrate processing apparatus, which are industrially applicable.

[0328] [Explanation of Symbols]

[0329] 21, 21a~21h Bubble supply pipes

[0330] 331 board

[0331] 100, 100A Substrate Processing Apparatus

[0332] 110 processing tank

[0333] 120 Substrate holding section

[0334] 130 Treatment Fluid Inlet Section

[0335] 180 Bubble Adjustment Section

[0336] 221 Control Department

[0337] 223 Storage Department

[0338] G, G1~G3 air bubble

[0339] P processing liquid hole

[0340] Substrates W, W1 to W3.

Claims

1. A substrate processing method, performed by a substrate processing apparatus, the substrate processing apparatus comprising a processing tank and a plurality of bubble supply pipes disposed inside the processing tank, the substrate processing method comprising: The immersion process involves immersing the substrate in an alkaline treatment solution stored in the treatment tank. In the bubble supply process, while the substrate is immersed in the alkaline treatment solution, bubbles are supplied to the alkaline treatment solution from below the substrate through each of the plurality of bubble holes provided in the bubble supply tube. as well as The bubble adjustment process involves adjusting the bubbles for each of the bubble supply pipes; and In the bubble supply process, gas is supplied to each of the bubble supply tubes, and bubbles are supplied to the alkaline treatment liquid through the bubble holes. In the bubble conditioning process, the control object for conditioning the bubbles is controlled for each bubble supply pipe, and the bubbles are adjusted for each bubble supply pipe. In the bubble conditioning process, the distribution of bubbles on the surface of the substrate is adjusted for each bubble supply pipe based on the distribution of a physical quantity representing the amount of substrate processed before immersion in the alkaline treatment solution.

2. The substrate processing method according to claim 1, wherein the controlled object includes at least one of the gas flow rate, the gas supply timing, and the gas supply period.

3. A substrate processing method, performed by a substrate processing apparatus, the substrate processing apparatus comprising a processing tank and a plurality of bubble supply pipes disposed inside the processing tank, the substrate processing method comprising: The immersion process involves immersing the substrate in an alkaline treatment solution stored in the treatment tank. In the bubble supply process, while the substrate is immersed in the alkaline treatment solution, bubbles are supplied to the alkaline treatment solution from below the substrate through each of the plurality of bubble holes provided in the bubble supply tube. as well as The bubble adjustment process involves adjusting the bubbles for each of the bubble supply pipes; and In the bubble supply process, gas is supplied to each of the bubble supply tubes, and bubbles are supplied to the alkaline treatment liquid through the bubble holes. In the bubble adjustment process, a learned model constructed by learning from training data is used to adjust the bubbles for each bubble supply tube. The learning data includes pre-impregnation treatment information and post-impregnation treatment information. The pre-immersion treatment information is a physical quantity representing the amount of processing performed on the learning object substrate before immersion in the alkaline treatment solution. The post-immersion processing information is a physical quantity representing the amount of processing done on the learning object substrate after immersion in the alkaline treatment solution and subsequent removal from the alkaline treatment solution. When the learning object substrate is immersed in the alkaline treatment solution, the learning data further includes at least one of the following: flow rate information indicating the gas flow rate, timing information indicating the gas supply sequence, and period information indicating the gas supply period. In the bubble adjustment process, input information is input into the learned model, and output information is obtained from the learned model. The input information includes information on physical quantities representing the amount of treatment the substrate received before immersion in the alkaline treatment solution. The output information includes information representing the controlled object. The controlled object, when the substrate is immersed in the alkaline treatment solution, includes at least one of the gas flow rate, the gas supply timing, and the gas supply period. In the bubble adjustment process, the bubble is adjusted according to the output information.

4. A substrate processing method, performed by a substrate processing apparatus, the substrate processing apparatus comprising a processing tank and a plurality of bubble supply pipes disposed inside the processing tank, the substrate processing method comprising: The immersion process involves immersing the substrate in an alkaline treatment solution stored in the treatment tank. In the bubble supply process, while the substrate is immersed in the alkaline treatment solution, bubbles are supplied to the alkaline treatment solution from below the substrate through each of the plurality of bubble holes provided in the bubble supply tube. as well as The bubble adjustment process involves adjusting the bubbles for each of the bubble supply pipes; and In the bubble supply process, gas is supplied to each of the bubble supply tubes, and bubbles are supplied to the alkaline treatment liquid through the bubble holes. In the bubble adjustment process, a learned model constructed by learning from training data is used to adjust the bubbles for each bubble supply tube. The learning data includes pre-impregnation treatment information and post-impregnation treatment information. The pre-immersion treatment information is a physical quantity representing the amount of processing performed on the learning object substrate before immersion in the alkaline treatment solution. The post-immersion processing information is a physical quantity representing the amount of processing done on the learning object substrate after immersion in the alkaline treatment solution and subsequent removal from the alkaline treatment solution. When the learning object substrate is immersed in the alkaline treatment solution, the learning data further includes at least one of the following: flow rate information indicating the gas flow rate, timing information indicating the gas supply sequence, and period information indicating the gas supply period. In the bubble adjustment process, input information is input into the learned model, and output information is obtained from the learned model. The input information includes physical quantities representing the amount of treatment done on the substrate before immersion in the alkaline treatment solution, and information representing the controlled object. The controlled object, when the substrate is immersed in the alkaline treatment solution, includes at least one of the gas flow rate, the gas supply timing, and the gas supply period. The output information includes information representing the clustering results of the input information. In the bubble adjustment process, the controlled object is controlled according to the output information.

5. The substrate processing method according to any one of claims 1 to 4, wherein the substrate processing apparatus further comprises a plate disposed inside the processing tank below the bubble supply pipe. The substrate processing method further includes a processing liquid introduction step, that is, while the alkaline processing liquid is stored in the processing tank, the alkaline processing liquid is introduced upward into the processing tank through a plurality of processing liquid holes provided on the plate.

6. The substrate processing method according to any one of claims 1 to 4, wherein the bubble supply tube is hydrophilic.

7. The substrate processing method according to claim 6, wherein the raw material of the bubble supply tube is quartz or polyetheretherketone.

8. A substrate processing apparatus comprising: Treatment tank for storing alkaline treatment solution; A substrate holding section holds the substrate and immerses it in the alkaline treatment solution stored in the treatment tank; and A bubble supply pipe, having a plurality of bubble holes and disposed inside the processing tank, supplies bubbles to the alkaline processing liquid from below the substrate through each of the plurality of bubble holes while the substrate is immersed in the alkaline processing liquid. Multiple bubble supply pipes are arranged inside the processing tank. The substrate processing apparatus further comprises: A bubble regulating unit adjusts the bubbles for each of the bubble supply pipes; and Control Department; and The bubble control unit supplies gas to each of the bubble supply pipes, and supplies bubbles to the alkaline treatment liquid from the bubble orifice. The control unit controls the bubble adjustment unit, and thus controls the control object for adjusting the bubbles for each bubble supply pipe. The control unit controls the controlled object for each of the bubble supply pipes to adjust the distribution of bubbles on the surface of the substrate based on the distribution of a physical quantity representing the amount of treatment of the substrate before it is immersed in the alkaline treatment solution.

9. The substrate processing apparatus of claim 8, wherein the controlled object includes at least one of the gas flow rate, the gas supply timing, and the gas supply period.

10. A substrate processing apparatus comprising: Treatment tank for storing alkaline treatment solution; A substrate holding section holds the substrate and immerses it in the alkaline treatment solution stored in the treatment tank; and A bubble supply pipe, having a plurality of bubble holes and disposed inside the processing tank, supplies bubbles to the alkaline processing liquid from below the substrate through each of the plurality of bubble holes while the substrate is immersed in the alkaline processing liquid. Multiple bubble supply pipes are arranged inside the processing tank. The substrate processing apparatus further comprises: A bubble adjustment unit adjusts the bubbles for each of the bubble supply pipes; The storage section stores the learned model constructed by learning from the learning data; and The control unit controls the storage unit; and The bubble control unit supplies gas to each of the bubble supply pipes, and supplies bubbles to the alkaline treatment liquid from the bubble orifice. The learning data includes pre-impregnation treatment information and post-impregnation treatment information. The pre-immersion treatment information is a physical quantity representing the amount of processing performed on the learning object substrate before immersion in the alkaline treatment solution. The post-immersion processing information is a physical quantity representing the amount of processing done on the learning object substrate after immersion in the alkaline treatment solution and subsequent removal from the alkaline treatment solution. When the learning object substrate is immersed in the alkaline treatment solution, the learning data further includes at least one of the following: flow rate information indicating the gas flow rate, timing information indicating the gas supply sequence, and period information indicating the gas supply period. The control unit inputs input information into the learned model and obtains output information from the learned model. The input information includes information on physical quantities representing the amount of treatment the substrate received before immersion in the alkaline treatment solution. The output information includes information representing the controlled object. The controlled object, when the substrate is immersed in the alkaline treatment solution, includes at least one of the gas flow rate, the gas supply timing, and the gas supply period. The control unit adjusts the bubble based on the output information.

11. A substrate processing apparatus comprising: Treatment tank for storing alkaline treatment solution; A substrate holding section holds the substrate and immerses it in the alkaline treatment solution stored in the treatment tank; and A bubble supply pipe, having a plurality of bubble holes and disposed inside the processing tank, supplies bubbles to the alkaline processing liquid from below the substrate through each of the plurality of bubble holes while the substrate is immersed in the alkaline processing liquid. Multiple bubble supply pipes are arranged inside the processing tank. The substrate processing apparatus further comprises: A bubble adjustment unit adjusts the bubbles for each of the bubble supply pipes; The storage section stores the learned model constructed by learning from the learning data; and The control unit controls the storage unit; and The bubble control unit supplies gas to each of the bubble supply pipes, and supplies bubbles to the alkaline treatment liquid from the bubble orifice. The learning data includes pre-impregnation treatment information and post-impregnation treatment information. The pre-immersion treatment information is a physical quantity representing the amount of processing performed on the learning object substrate before immersion in the alkaline treatment solution. The post-immersion processing information is a physical quantity representing the amount of processing done on the learning object substrate after immersion in the alkaline treatment solution and subsequent removal from the alkaline treatment solution. When the learning object substrate is immersed in the alkaline treatment solution, the learning data further includes at least one of the following: flow rate information indicating the gas flow rate, timing information indicating the gas supply sequence, and period information indicating the gas supply period. The control unit inputs input information into the learned model and obtains output information from the learned model. The input information includes physical quantities representing the amount of treatment done on the substrate before immersion in the alkaline treatment solution, and information representing the controlled object. The controlled object, when the substrate is immersed in the alkaline treatment solution, includes at least one of the gas flow rate, the gas supply timing, and the gas supply period. The output information includes information representing the clustering results of the input information. The control unit controls the controlled object based on the output information.

12. A substrate processing apparatus comprising: Treatment tank for storing alkaline treatment solution; A substrate holding section holds the substrate and immerses the substrate in the alkaline treatment solution stored in the treatment tank; as well as A bubble supply pipe, having a plurality of bubble holes and disposed inside the processing tank, supplies bubbles to the alkaline treatment solution from below the substrate through each of the plurality of bubble holes while the substrate is immersed in the alkaline treatment solution; and The substrate holding portion holds multiple substrates by being spaced apart in a specific direction. The bubble supply tube extends along the specific direction. In the bubble supply pipe, the plurality of bubble holes are arranged at intervals in a specific direction. Multiple gap spaces exist in the arrangement of the plurality of substrates. Each of the plurality of gap spaces represents a space between two substrates that are adjacent to each other in the specific direction. The plurality of bubble pores include: The first bubble hole is disposed on the outer side of the particular direction than the substrate disposed at one end of the plurality of substrates in the particular direction; The second bubble hole is disposed further outward in the specific direction than the substrate disposed at the other end of the plurality of substrates in the specific direction; and Multiple third bubble holes are configured to correspond to the multiple gap spaces, respectively; The number of first bubble pores is greater than the number of third bubble pores corresponding to one of the gap spaces in the plurality of third bubble pores. The second bubble pore is more numerous than the third bubble pore corresponding to the one gap space.

13. The substrate processing apparatus according to any one of claims 8 to 12, further comprising a processing liquid introduction section disposed inside the processing tank below the bubble supply pipe. The treatment fluid inlet includes a plate with multiple treatment fluid holes. The treatment liquid inlet introduces alkaline treatment liquid upwards into the treatment tank through the plurality of treatment liquid holes while the alkaline treatment liquid is stored in the treatment tank.

14. The substrate processing apparatus according to any one of claims 8 to 12, wherein the bubble supply tube is hydrophilic.

15. The substrate processing apparatus according to claim 14, wherein the raw material of the bubble supply tube is quartz or polyetheretherketone.

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