Encapsulation with windowed heat sink

Abstract

Package with windowed heat sink. A semiconductor device has a substrate and a first semiconductor die disposed above the substrate. A sub-package is also disposed above the substrate. A stiffener is disposed above the substrate surrounding the first semiconductor die and the sub-package. A heat sink is disposed above the stiffener. The heat sink is thermally coupled to the first semiconductor die. The heat sink has an opening above the sub-package.

Description

Technical Field

[0001] The present invention relates generally to semiconductor devices and, more particularly, to semiconductor devices and methods of forming semiconductor devices having windowed heat sinks. Background Art

[0002] Semiconductor devices are commonly found in modern electronic products. Semiconductor devices perform a wide range of functions, such as signal processing, high-speed computing, transmitting and receiving electromagnetic signals, controlling electronic devices, converting sunlight into electricity, and creating visual images for television displays. Semiconductor devices are found in the fields of communications, power conversion, networking, computers, entertainment, and consumer products. Semiconductor devices are also found in military applications, aviation, automobiles, industrial controllers, and office equipment.

[0003] As devices decrease in size and operate at higher frequencies, heat generation of semiconductor components becomes more of a design consideration. Many semiconductor packages include a heat sink connected to the semiconductor die. The heat sink helps dissipate heat from the semiconductor die by spreading the thermal energy over a larger surface area. The heat sink also improves thermal handling capabilities by allowing external heat dissipation components to be attached via the heat sink.

[0004] A heat sink is typically a separate component disposed over a semiconductor die or package. The heat sink typically forms part of a housing that surrounds and extends over the components of the semiconductor package. One problem with prior art heat sinks is that the housing can trap thermal energy within the package and cause thermal management problems for other enclosed components. Therefore, there is a need for an improved heat sink for a semiconductor package. BRIEF DESCRIPTION OF THE DRAWINGS

[0005] Figure 1a-1c illustrates a semiconductor wafer having a plurality of semiconductor dies separated by saw streets;

[0006] Figure 2a-2h A semiconductor package having a windowed heat sink is illustrated;

[0007] Figure 3 A double-sided embodiment is illustrated;

[0008] Figure 4a-4c An embodiment with a separation reinforcement member is illustrated;

[0009] Figure 5a-5c An embodiment suitable for packages and semiconductor dies having different heights is illustrated;

[0010] Figure 6a-6c illustrates an embodiment using a grid of openings instead of a single window; and

[0011] Figure 7a and Figure 7bThe integration of the package into an electronic device is illustrated. DETAILED DESCRIPTION

[0012] In the following description, the present invention is described in one or more embodiments with reference to the drawings, wherein like reference numerals represent the same or similar elements. Although the present invention is described in terms of the best mode for carrying out the purposes of the present invention, it will be appreciated by those skilled in the art that the present invention is intended to cover substitutions, modifications and equivalents as may be included within the spirit and scope of the present invention as defined by the appended claims and their equivalents, which are supported by the following disclosure and the accompanying drawings. As used herein, the term "semiconductor die" refers to both the singular and plural forms of the word, and thus may refer to both a single semiconductor device and a plurality of semiconductor devices.

[0013] Semiconductor devices are typically manufactured using two complex manufacturing processes: front-end manufacturing and back-end manufacturing. Front-end manufacturing involves forming multiple die on the surface of a semiconductor wafer. Each die on the wafer contains active and passive electronic components that are electrically connected to form a functional circuit. Active electronic components such as transistors and diodes have the ability to control the flow of electrical current. Passive electrical components such as capacitors, inductors, and resistors create the relationship between voltage and current necessary to perform the circuit's function.

[0014] Back-end manufacturing refers to cutting or dividing the finished wafer into individual semiconductor dies and packaging the semiconductor dies for structural support, electrical interconnection, and environmental isolation. In order to divide the semiconductor dies, the wafer is scored and broken along the non-functional areas of the wafer (called saw streets or scribe lines). The wafer is divided using a laser cutting tool or a saw blade. After division, the individual semiconductor dies are mounted to a package substrate, which includes pins or contact pads for interconnection with other system components. Then, the contact pads formed above the semiconductor die are connected to the contact pads within the package. The electrical connection can be made with a conductive layer, a bump, a columnar bump, a conductive glue, a bonding wire, or other suitable interconnect structure. A sealant or other molding compound is deposited over the package to provide physical support and electrical insulation. The finished package is then inserted into the electrical system, and the functionality of the semiconductor device is made available to other system components.

[0015] Figure 1aA semiconductor wafer 100 is shown having a base substrate material 102 such as silicon, germanium, aluminum phosphide, aluminum arsenide, gallium arsenide, gallium nitride, indium phosphide, silicon carbide, or other bulk semiconductor material. A plurality of semiconductor dies or components 104 are formed on the wafer 100 separated by passive inter-die wafer regions or saw streets 106 as described above. The saw streets 106 provide dicing areas to separate the semiconductor wafer 100 into individual semiconductor dies 104. In one embodiment, the semiconductor wafer 100 has a width or diameter of 100-450 millimeters (mm).

[0016] Figure 1b A cross-sectional view of a portion of a semiconductor wafer 100 is shown. Each semiconductor die 104 has a back or inactive surface 108 and an active surface 110, which contains analog or digital circuits implemented as active devices, passive devices, conductive layers, and dielectric layers formed within or above the die and electrically interconnected according to the electrical design and function of the die. For example, the circuit may include one or more transistors, diodes, and other circuit elements formed within the active surface 110 to implement analog circuits or digital circuits, such as digital signal processors (DSPs), ASICs, MEMS, memories, or other signal processing circuits. The semiconductor die 104 may also include integrated passive devices (IPDs) such as inductors, capacitors, and resistors for RF signal processing. The back side 108 of the semiconductor wafer 100 may undergo an optional back grinding operation with a mechanical grinding or etching process to remove a portion of the base material 102 and reduce the thickness of the semiconductor wafer 100 and the semiconductor die 104.

[0017] Conductive layer 112 is formed over active surface 110 using PVD, CVD, electrolytic plating, electroless plating process, or other suitable metal deposition process. Conductive layer 112 includes one or more layers of aluminum (Al), copper (Cu), tin (Sn), nickel (Ni), gold (Au), silver (Ag), or other suitable conductive materials. Conductive layer 112 operates as a contact pad electrically connected to the circuit on active surface 110.

[0018] Conductive layer 112 may be formed as a contact pad disposed side by side at a first distance from an edge of semiconductor die 104, such as Figure 1b. Alternatively, conductive layer 112 may be formed as contact pads offset in multiple rows such that a first row of contact pads is disposed at a first distance from the edge of the die and a second row of contact pads alternating with the first row is disposed at a second distance from the edge of the die. Conductive layer 112 represents the last conductive layer formed over semiconductor die 104 having contact pads for subsequent electrical interconnection to a larger system. However, one or more intermediate conductive and insulating layers formed between the actual semiconductor devices on active surface 110 and contact pads 112 for signal routing may be present.

[0019] Conductive bump material is deposited over conductive layer 112 using evaporation, electrolytic plating, electroless plating, ball drop or screen printing processes. The bump material can be Al, Sn, Ni, Au, Ag, Pb, Bi, Cu, solder and combinations thereof with optional flux solutions. For example, the bump material can be eutectic Sn / Pb, high lead solder or lead-free solder. The bump material is bonded to conductive layer 112 using a suitable attachment or bonding process. In some embodiments, the bump material is reflowed by heating the material above its melting point to form a conductive ball or bump 114. In one embodiment, conductive bump 114 is formed over an under-bump metallization layer (UBM) having a wetting layer, a barrier layer and an adhesion layer. Conductive bump 114 can also be compression bonded or thermocompressively bonded to conductive layer 112. Conductive bump 114 represents a type of interconnect structure that can be formed over conductive layer 112 for electrical connection to the substrate. The interconnect structure may also use bonding wires, conductive paste, stud bumps, micro bumps, or other electrical interconnects.

[0020] exist Figure 1c In the embodiment of the present invention, semiconductor wafer 100 is singulated through saw streets 106 using a saw blade or laser cutting tool 118 into individual semiconductor die 104. Individual semiconductor die 104 may be inspected and electrically tested to identify KGDs after singulation.

[0021] Figure 2a-2h The formation of a semiconductor package 150 having a semiconductor die 104 and a windowed heat sink is illustrated. Figure 2a 1 is a partial cross-sectional view of a substrate 152 used as a basis for manufacturing package 150. Substrate 152 can be a unit substrate that is segmented from a larger panel, or remain as part of a larger substrate panel. Hundreds or thousands of packages are typically formed in a single substrate panel, or on separate unit substrates on a single carrier using the same steps described herein.

[0022] The substrate 152 includes one or more insulating layers 154 interlaced with one or more conductive layers 156. In one embodiment, the insulating layer 154 is a core insulating board in which the conductive layer 156 is patterned over the top and bottom surfaces, such as a copper clad laminate substrate. The conductive layer 156 also includes conductive vias electrically coupled vertically through the insulating layer 154. The substrate 152 can include any number of conductive and insulating layers interlaced over each other. A solder mask or passivation layer can be formed over either side of the substrate 152. In other embodiments, any suitable type of substrate or lead frame is used for the substrate 152.

[0023] Any components desired to achieve the intended functionality of package 150 are mounted to or disposed above substrate 152 and are electrically connected to conductive layer 156. Substrate 152 has two major surfaces: top surface 157 and bottom surface 159. Components may be mounted to top surface 157 and bottom surface 159 in any suitable configuration. Figure 2b , fabrication of package 150 on substrate 152 begins with surface mounting semiconductor die 104 , discrete components 164 , and sub-package 170 on top surface 157 using, for example, any suitable pick and place method or equipment.

[0024] Semiconductor die 104 represents any one or more electrical components that will be thermally connected or coupled to an overlying heat sink for thermal management in subsequent manufacturing steps. Subpackage 170 and discrete components 164 represent components that do not need to be directly coupled to a heat sink. Subpackage 170 can be any suitable package of any suitable type or configuration. Subpackage 170 can also be a bare die similar to semiconductor die 104, or only discrete components 164 can be used without a separate subpackage 170.

[0025] The illustrated sub-package 170 includes a substrate 172 similar to substrate 152, a die 174 similar to die 104, an encapsulant 176, and solder bumps 178 similar to bumps 114. Additional dies, sub-packages, or discrete components may be mounted on top surfaces 157 or 159 as desired to achieve the intended functionality of package 150. Discrete components 164, such as resistors, capacitors, inductors, transistors, or diodes, are mounted on top surface 157 using solder paste or other suitable attachment and connection mechanisms. The solder paste is reflowed between the terminals of the discrete components 164 and the contact pads of the conductive layer 156 on top surface 157. Bumps 114 and 178 are typically reflowed in the same process step to physically and electrically connect die 104 and sub-package 170, respectively, to substrate 152.

[0026] exist Figure 2cIn the embodiment, the adhesive layer 200 is disposed on the top surface 157. In one embodiment, the adhesive layer 200 is dispensed using a nozzle into a ring that completely surrounds the perimeter of the substrate 152. In other embodiments, the adhesive layer 200 is discontinuous around the perimeter of the substrate 152.

[0027] exist Figure 2d and Figure 2e In the embodiment of the present invention, the adhesion layer 200 is used to attach the reinforcement ring 202 to the substrate 152. The reinforcement ring 202 forms a ring around the semiconductor die 104, the sub-package 170 and the discrete components 168. In the illustrated embodiment, the reinforcement ring 202 extends completely to all edges of the substrate 152 and continuously around the perimeter of the substrate. In other embodiments, the substrate 152 can extend beyond the boundary of the reinforcement ring 202, and additional components can be arranged on the substrate outside the boundary of the reinforcement ring. The reinforcement ring 202 is directly located on the adhesion layer 200 and has approximately the same shape. In the embodiment where the reinforcement ring 202 is not along the perimeter of the substrate 152, the adhesion layer 200 is modified to follow the shape of the reinforcement ring accordingly. The adhesion layer 200 fixes the reinforcement ring 202 to the substrate 152. The reinforcement ring 202 physically supports the final package to reduce warping.

[0028] Thermal interface material (TIM) 204 is disposed on back surface 108 of semiconductor die 104. TIM 204 facilitates heat transfer from semiconductor die 104 to an overlying heat sink that will be placed in a subsequent manufacturing step. TIM 204 may be applied in any suitable pattern and may not completely cover back surface 108.

[0029] Figure 2e A plan view of the reinforcement ring 202 on the substrate 152 is shown, revealing a plurality of discrete components 164 and a pair of sub-packages 170a and 170b. Any suitable combination of components may be used. In one embodiment, the sub-package 170a is Figure 2d 104, while sub-package 170b is a bare die similar to die 104. The plan view shows how stiffener ring 202 extends completely around the components on substrate 152. Stiffener ring 202 may also be discontinuous.

[0030] exist Figure 2f and Figure 2gIn the embodiment, the heat sink 210 is disposed on the reinforcement ring 202. The heat sink 210 is cut from a metal sheet using mechanical or laser cutting, or is formed using any other suitable process. The material used for the heat sink 210 is copper, steel, aluminum, titanium, carbon, mixtures thereof, alloys thereof, or any other suitable metal or non-metal heat sink material. The heat sink 210 includes an outer perimeter that is approximately the same as the outer perimeter of the ring 202. Before the heat sink is disposed on the reinforcement ring, an adhesive layer 214 is disposed on the heat sink 210, the reinforcement ring 202, or both. The adhesive layer 214 mechanically fixes the heat sink 210 to the reinforcement ring 202. The height of the reinforcement ring 202 is selected so that the bottom surface of the heat sink 210 contacts and presses down on the TIM 204.

[0031] The heat sink 210 compresses the TIM 204 into a thin layer. The TIM 204 enhances the thermal conductivity from the semiconductor die 104 to the heat sink 210. Generally speaking, the heat sink 210 will be pressed down until the heat sink physically contacts the semiconductor die 104. The TIM 204 fills in the tiny gap between the heat sink 210 and the back side 108 of the semiconductor die 104, which exists due to roughness and other defects in the surface. All of the following embodiments generally also include their corresponding heat sinks, which are in physical contact with their corresponding die or other electrical components being cooled.

[0032] The heat sink 210 includes a window 212 formed as an opening completely through the heat sink above the sub-package 170 . Figure 2g A plan view is shown with subpackages 170a and 170b completely contained within the footprint of window 212. Having subpackage 170 completely within the footprint of window 212 allows the subpackage to be taller than would normally be allowed if heat sink 210 completely filled the area within stiffener ring 202. However, if the subpackage is shorter than stiffener ring 202, subpackage 170 can extend below heat sink 210 and outside the footprint of window 212. Heat sink 210 extends over discrete component 168, but discrete component 168 can also be located within the footprint of window 212. Window 212 is formed in any suitable shape, primarily based on the layout of the underlying components that do not need to be in direct thermal contact with heat sink 210.

[0033] Solder bumps 220 are applied to bottom surface 159 of substrate 152 by any suitable method, similar to Figure 1b Application of the bump 114 completes Figure 2h The package 150 in the embodiment of the present invention is shown in FIG. Bumps 220 are subsequently used to mount the package 150 into a larger electrical system. In some embodiments, multiple packages 150 are formed into a panel and then separated from each other after completion.

[0034] The semiconductor die 104 is thermally connected to the heat sink 210 through the TIM 204, which allows efficient removal of heat energy from the semiconductor die. A heat sink component may be attached later to the top surface of the heat sink 210 opposite to the semiconductor die 104 to increase the exposed surface area and thereby increase the heat transfer rate to the surrounding environment. The opening 212 in the heat sink 210 allows the heat energy from the sub-package 170 to escape from the package 150 to the surrounding environment. The sub-package 170 may not need to be thermally managed via a heat sink, but if it is completely enclosed in a complete bubble without a window 212 formed between the substrate 152, the reinforcement ring 202 and the heat sink 210, sufficient heat can still be generated to cause a failure. The window 212 allows the heat in the package 150 to escape faster than when the heat sink 210 completely encloses the package. Any component that requires a heat sink component or a heat sink is placed below the heat sink 210, while the component that does not require a heat sink is placed below or near the window 212 to allow convection to leave the package 150.

[0035] Figure 3 Double-sided semiconductor package 222 is shown. Semiconductor package 222 is similar to package 150, with the primary difference being semiconductor die 224 and discrete components 226 disposed on bottom surface 159. Any combination of components including active or passive discrete components, integrated circuits, and sub-packages may be mounted on bottom surface 159.

[0036] Figure 4a-4c An embodiment is illustrated in which the stiffening ring comprises bars that pass through the package to separate the electrical components. Figure 4a The reinforcement member 230 in the embodiment includes an annular reinforcement member 230a and a compartment reinforcement member 230b formed together as a single continuous piece of material. The compartment reinforcement member 230b creates two different compartments for the electrical components on the substrate 152. Alternatively, as Figure 4b As shown in FIG. 2 , in addition to the annular reinforcement 210 , separate compartment reinforcements 240 may be added.

[0037] The compartment stiffener helps further support the resulting semiconductor package against warping and reduces the amount of heat that reaches sub-package 170 from semiconductor die 104 via radiation or convection. Figure 4c A cross section of a package 250 with a compartment reinforcement is shown. The compartment reinforcement 240 with the annular reinforcement 210 and the reinforcement 230 with the built-in compartment reinforcement 230b both have substantially the same cross-sectional appearance, except for the cross section where there is a gap between the reinforcements 210 and 240. As an example, Figure 4c Also illustrated is a higher sub-package 170c extending into the window 212 and above the top surface of the heat sink 210. Any embodiment may include a higher sub-package 170c.

[0038] In some cases, the height of semiconductor die 104 is not suitable for a flat heat spreader disposed on annular stiffener 202 of a particular thickness that is available. Figure 5a-5c Various embodiments are shown to accommodate semiconductor dies 104 of different heights. Figure 5a In the embodiment shown in FIG. 2 , package 260 includes semiconductor die 104 a that is taller than annular stiffener 202 , and thus heat sink 210 will not be able to lie flat on the annular stiffener.

[0039] Therefore, a heat sink 262 having a cavity 264 formed on the bottom surface of the heat sink is used. The cavity 264 has a depth into the heat sink 262 that is approximately equal to or slightly greater than the height difference between the semiconductor die 104 a and the annular stiffener 202. When the heat sink 262 is placed on the annular stiffener 202, there is a slight gap between the horizontal surface of the cavity 264 and the back side 108 of the semiconductor die 104 a to accommodate the TIM 266.

[0040] Figure 5b Another cross-sectional view of the same package 260 is shown. Figure 5b The cross section of extends only through the heat sink 262 and does not pass through the window 212. Two semiconductor dies 104a and 104b are coupled to the heat sink 262 for cooling. As previously discussed, the semiconductor die 104a is taller than the annular reinforcement 202, and the cavity 264 is used to accommodate the excess height. On the other hand, the semiconductor die 104b is short enough that the heat sink 210 will be too far away to make a satisfactory thermal coupling. The heat sink 262 is formed with a protrusion 268 to lower the bottom surface of the heat sink above the semiconductor die 104b. The protrusion 268 brings the bottom surface of the heat sink 262 to the bottom, so that the gap between the heat sink and the semiconductor die 104b is suitable for the TIM 266 to thermally connect the two. The protrusion 268 has an inclined edge, but the edge can also be vertical, just like the cavity 264. Similarly, the cavity 264 can have an inclined edge instead of the vertical edge shown in the figure.

[0041] Figure 5cA package 270 with a heat sink 272 is shown. Package 270 includes the same two semiconductor dies 104a and 104b from package 260, wherein die 104a is taller than annular stiffener 202, and die 104b is shorter than annular stiffener 202. Heat sink 272 is stamped or otherwise bent, shaped, or formed to include regions 274 and 280 having different heights compared to the rest of the heat sink, which is approximately flush with the top of annular stiffener 202. Region 274 is stamped from the top to lower the bottom surface toward semiconductor die 104b. Because heat sink 272 starts with a uniform thickness and no material is removed during the stamping process, the thickness of the heat sink within region 274 remains approximately equal to the thickness around region 274. By moving region 274 downward, a concave surface 276 is formed on the top of heat sink 272, and a convex surface 278 is formed on the bottom of the heat sink.

[0042] Likewise, a region 280 is stamped from the bottom to raise the surface of the heat sink 272 and form a convex surface 282 on the top and a concave surface 284 on the bottom. The stamping is performed before the heat sink 272 is mounted on the package 270. The stamping bends the metal of the heat sink 272 into the shape shown or other suitable shapes. Any number and height of semiconductor dies, semiconductor packages, or other suitable devices may be formed by Figure 5a-5c Any of the methods disclosed in making thermal contact with a heat sink.

[0043] Figure 6a-6c Various embodiments are illustrated in which a grid is formed through the heat sink rather than a window. The grid includes a plurality of smaller openings or holes formed through the heat sink rather than one larger window. Figure 6a In FIG. 1 , the heat sink 290 includes a grid 291 formed over the sub-packages 170 a and 170 b. The grid 291 includes a plurality of diamond-shaped openings 292 . Figure 6b The heat sink 293 in FIG. 2 includes a grid 294 including a plurality of square openings 295 . Figure 6c The heat sink 296 in the embodiment of the present invention comprises a grid 297 having a plurality of circular openings 298. Openings 292, 295 and 298 can be formed by mechanical drilling, mechanical punching, laser cutting or other suitable processes. Any shape of opening can be used to form a grid. Forming a grid above sub-packages 170a and 170b helps to physically protect the top of the sub-package from external contact, while still allowing thermal convection to leave the package. The heat sink material retained between the grid holes provides physical protection, while the grid holes allow thermal convection to leave the package.

[0044] Figure 7a and Figure 7b The incorporation of the semiconductor package described above (eg, package 150 ) into an electronic device 300 is illustrated. Figure 7aA partial cross-section of package 150 is shown mounted on a printed circuit board (PCB) or other substrate 302 as part of electronic device 300. Bumps 220 are reflowed onto conductive layer 304 of PCB 302 to physically attach and electrically connect package 150 to the PCB. In other embodiments, heat compression or other suitable attachment and connection methods are used. In some embodiments, an adhesive layer or underfill layer is used between package 150 and PCB 302. Semiconductor die 104, discrete components 168, and sub-package 170 are electrically coupled to each other and to conductive layer 304 through substrate 152 and bumps 220.

[0045] Figure 7b An electronic device 300 is illustrated that includes a PCB 302, wherein a plurality of semiconductor packages, including package 150, are mounted on the surface of the PCB. Depending on the application, the electronic device 300 may have one type of semiconductor package or multiple types of semiconductor packages. The electronic device 300 may be a stand-alone system that uses a semiconductor package to perform one or more electrical functions. Alternatively, the electronic device 300 may be a subcomponent of a larger system. For example, the electronic device 300 may be part of a tablet computer, a cellular phone, a digital camera, a communication system, or other electronic device. The electronic device 300 may also be a graphics card, a network interface card, or another signal processing card inserted into a computer. The semiconductor package may include a microprocessor, a memory, an ASIC, a logic circuit, an analog circuit, an RF circuit, a discrete active or passive device, or other semiconductor die or electrical component.

[0046] exist Figure 7b , PCB 302 provides a common substrate for structural support and electrical interconnection of semiconductor packages mounted on the PCB. Conductive signal traces 304 are formed over the surface or within the layers of PCB 302 using evaporation, electrolytic plating, electroless plating, screen printing, or other suitable metal deposition processes. Signal traces 304 provide electrical communication between semiconductor packages, mounted components, and other external systems or components. Traces 304 also provide power and ground connections to the semiconductor package as needed.

[0047] In some embodiments, the semiconductor device has two packaging levels. The first level of packaging is a technique for mechanically and electrically attaching the semiconductor die to an intermediate substrate. The second level of packaging involves mechanically and electrically attaching the intermediate substrate to the PCB 302. In other embodiments, the semiconductor device may have only the first level of packaging, where the die is mechanically and electrically mounted directly to the PCB 302.

[0048] For illustrative purposes, several types of first level packages are shown on PCB 302, including wire bond packages 346 and flip chips 348. Additionally, several types of second level packages, including ball grid arrays (BGA) 350, bump chip carriers (BCC) 352, land grid arrays (LGA) 356, multi-chip modules (MCM) 358, quad flat no-lead packages (QFN) 360, quad flat packages 362, and embedded wafer level ball grid arrays (eWLB) 364, are shown mounted on PCB 302 along with package 150. Conductive traces 304 electrically couple the various packages and components disposed on PCB 302 to package 150, thereby providing access to components within package 150 to other components on the PCB.

[0049] Depending on the system requirements, any combination of semiconductor packages configured with any combination of first-level and second-level package types and other electronic components can be connected to the PCB 302. In some embodiments, the electronic device 300 includes a single attached semiconductor package, while other embodiments require multiple interconnected packages. By combining one or more semiconductor packages on a single substrate, manufacturers can incorporate prefabricated components into electronic devices and systems. Because semiconductor packages include complex functionality, electronic devices can be manufactured using less expensive components and streamlined manufacturing processes. The resulting device is less likely to fail and is less expensive to manufacture, resulting in reduced consumer costs.

[0050] While one or more embodiments of the present invention have been described in detail, those skilled in the art will appreciate that modifications and adaptations may be made to the embodiments without departing from the scope of the invention as set forth in the following claims.

Claims

1. A method for manufacturing a semiconductor device, comprising: providing a substrate; disposing a first semiconductor die over the substrate; disposing a sub-package above the substrate; disposing a stiffener over the substrate surrounding the first semiconductor die and the sub-package; providing a separate compartment stiffener on the substrate between the first semiconductor die and the sub-package, wherein a height of the separate compartment stiffener is equal to a height of the stiffener; and A heat sink is disposed over the stiffener, wherein the heat sink is thermally coupled to the first semiconductor die, and wherein the heat sink includes a grid over the subpackage.

2. The method according to claim 1, wherein: The sub-package is disposed entirely within the footprint of the grid. 3 . The method of claim 1 , further comprising disposing a second semiconductor die over the substrate and thermally coupled to a heat sink, wherein a height of the first semiconductor die is different than a height of the second semiconductor die. 4 . The method of claim 1 , further comprising forming a cavity or a protrusion on the heat spreader above the first semiconductor die.

5. A method for manufacturing a semiconductor device, comprising: providing a substrate; disposing a reinforcement member over the first surface of the substrate; disposing a first electrical component over the first surface of the substrate; forming a heat sink, the heat sink comprising a grid formed in the heat sink; and A heat sink is disposed over the stiffener and a mesh is disposed over the first electrical component. 6 . The method of claim 5 , further comprising disposing a second electrical component over a second surface of the substrate opposite the first surface. 7 . The method of claim 5 , further comprising disposing a second electrical component over the substrate and thermally coupled to a heat sink.

8. The method according to claim 5, wherein: The reinforcement comprises a compartment reinforcement.

9. The method of claim 5, further comprising forming a protrusion or a cavity in the heat sink by: Provide the sheet of material; and Bend or shape the sheet of material to include protrusions or cavities.

10. A semiconductor device comprising: substrate; a first semiconductor die disposed over the substrate; a sub-package disposed above the substrate; a stiffener disposed over the substrate surrounding the first semiconductor die and the sub-package; and A heat sink is disposed over the stiffener, wherein the heat sink is thermally coupled to the first semiconductor die, and wherein the heat sink includes a grid over the subpackage.

11. The semiconductor device according to claim 10, wherein: The sub-package is disposed entirely within the footprint of the grid. 12 . The semiconductor device of claim 10 , further comprising a second semiconductor die disposed over the substrate and thermally coupled to the heat sink, wherein a height of the first semiconductor die is different than a height of the second semiconductor die.

13. The semiconductor device according to claim 10, wherein: The heat sink includes a cavity or a protrusion.

14. The semiconductor device according to claim 10, wherein: The reinforcement comprises a compartment reinforcement.

15. A semiconductor device comprising: substrate; a first electrical component disposed over the substrate; a semiconductor die disposed over a substrate; a reinforcement member disposed above the substrate; and A heat sink disposed over the stiffener, wherein the heat sink includes a mesh disposed over the first electrical component and a cavity or protrusion disposed over the semiconductor die, wherein the cavity or protrusion includes tapered edges, and wherein a footprint of the mesh is greater than a footprint of the first electrical component. 16 . The semiconductor device of claim 15 , further comprising a second electrical component disposed over the substrate and thermally coupled to the heat sink.

17. The semiconductor device according to claim 15, wherein: The reinforcement comprises a compartment reinforcement.

Images