A polymer deposition device for neutralizing high charges in ion beams

Abstract

The present invention discloses a polymer deposition device for neutralizing high charges in ion beams, comprising an extraction tube, an acceleration tube, an anode tube, an extraction channel and a vacuum chamber which are connected in sequence, an ion source arc head is arranged on the extraction tube, an air inlet pipe is connected with the extraction channel, the ion source arc head is used to emit ion beams, the air inlet pipe is used to introduce a gas that is easy to lose electrons, a rotating cold roller is arranged in the vacuum chamber, and the surface of the rotating cold roller is used to deposit a polymer film layer. The present invention solves the problems that insulating substrates such as polymers are prone to charge accumulation when treated by existing high-energy ion beams, and the polymers will not be electrically damaged by sparking discharge; a neutralization and electron generation channel is arranged between the high-energy ion beam generating device and the polymer substrate, ensuring that the charges accumulated on the polymer surface can be neutralized in time to prevent sparking from damaging the substrate; the polymer deposited metal film layer has good density, the film layer has no obvious defects, and the film-base bonding strength is high.

Description

Technical Field

[0001] The invention relates to the technical field of polymer deposition, in particular to a polymer deposition device for neutralizing high charges in an ion beam. Background Art

[0002] As the electronic information field becomes more and more important in the development of today's society, it is conservatively estimated that more than 50% of the related components in the electronic information field are imported from abroad, such as photoresists, photolithography machines, polymer substrates, high-end ultra-thin electronic copper-clad laminate materials, etc. The main technical difficulties of high-end electronic copper-clad materials lie in the stringent requirements of high bonding strength, high uniformity and high density, especially for ultra-thin copper-clad laminates, high density, high uniformity and low stress are the current international difficulties. High-energy ion beams are one of the most effective ways to solve the bonding strength problem, but when high-energy ion beams are used to treat polymers, charges will accumulate on the surface of the polymers, causing the polymers to ignite and damage the matrix.

[0003] Under the condition of an accelerating voltage, the existing equipment emits high energy ions, which may cause certain damage and burns to the quality of the product. Summary of the invention

[0004] The purpose of the present invention is to provide a polymer deposition device for neutralizing high charges in ion beams to solve the problems of the above-mentioned prior art, and to timely neutralize the charges accumulated on the surface of the polymer to prevent sparks from damaging the substrate.

[0005] To achieve the above object, the present invention provides the following solutions:

[0006] The present invention provides a polymer deposition device for neutralizing high charges in an ion beam, comprising an extraction tube, an acceleration tube, an anode tube, an extraction channel and a vacuum chamber which are connected in sequence, wherein an ion source arc head is arranged on the extraction tube, an air inlet pipe is connected with the extraction channel, the ion source arc head is used for emitting an ion beam, the air inlet pipe is used for introducing a gas which is easy to lose electrons, a rotating cold roller is arranged in the vacuum chamber, and the surface of the rotating cold roller is used for depositing a polymer film layer.

[0007] Preferably, two vacuum molecular pumps are symmetrically arranged at one end of the outlet channel connected to the vacuum chamber.

[0008] Preferably, a magnetic field line package is provided at the connection point between the air inlet pipe and the outlet channel, and the magnetic field line package is connected to alternating current, and the frequency of the alternating current is 1-50 Hz and the current is 1-10A.

[0009] Preferably, a baffle is provided at the connection between the outlet channel and the vacuum chamber.

[0010] Preferably, a suppression electrode is provided on the anode cylinder.

[0011] Preferably, the gas introduced into the air inlet pipe is Ar or Kr.

[0012] Preferably, the gas flow rate of the inlet pipe is 30-50 sccm and the gas pressure is 1×10 -2 -2×10 -1 Pa.

[0013] Preferably, the material of the lead-out channel is a material with high electron emissivity, and the material with high electron emissivity is Ni or Fe.

[0014] Compared with the prior art, the present invention has achieved the following technical effects:

[0015] The polymer deposition device for neutralizing high charges in ion beams of the present invention solves the problems of easy charge accumulation in insulating substrates such as polymers treated by existing high-energy ion beams, and no electrical damage to polymers caused by sparking discharges; a neutralization and electron generation channel is set between the high-energy ion beam generating device and the polymer substrate, ensuring that the charges accumulated on the polymer surface can be neutralized in time to prevent sparking damage to the substrate; the polymer deposited metal film layer has good density, the film layer has no obvious defects, and the film-base bonding strength is high. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0017] Figure 1 It is a schematic structural diagram of a polymer deposition device for neutralizing high charges in an ion beam according to the present invention;

[0018] Among them: 1-polymer deposition device for neutralizing high charge in ion beam, 2-ion source arc head, 3-extraction tube, 4-acceleration tube, 5-anode tube, 6-suppression electrode, 7-extraction channel, 8-inlet pipe, 9-magnetic field wire package, 10-extraction molecular pump, 11-vacuum chamber, 12-rotating cold roller, 13-baffle, 14-ion beam. DETAILED DESCRIPTION

[0019] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0020] The purpose of the present invention is to provide a polymer deposition device for neutralizing high charges in ion beams to solve the problems existing in the prior art and to timely neutralize charges accumulated on the surface of polymers to prevent ignition from damaging the substrate.

[0021] In order to make the above-mentioned objects, features and advantages of the present invention more obvious and easy to understand, the present invention is further described in detail below with reference to the accompanying drawings and specific embodiments.

[0022] like Figure 1 As shown: This embodiment provides a polymer deposition device 1 for neutralizing high charges in an ion beam, comprising an extraction tube 3, an acceleration tube 4, an anode tube 5, an extraction channel 7 and a vacuum chamber 11 connected in sequence, an ion source arc head 2 is arranged on the extraction tube 3, an air inlet pipe 8 is connected to the extraction channel 7, the ion source arc head 2 is used to emit an ion beam 14, the air inlet pipe 8 is used to introduce a gas that easily loses electrons, and a rotating cold roller 12 is arranged in the vacuum chamber 11, and the surface of the rotating cold roller 12 is used to deposit a polymer film layer. The rotating cold roller 12 is driven to rotate by a servo motor.

[0023] Two vacuum molecular pumps 10 are symmetrically arranged at one end of the lead-out channel 7 connected to the vacuum chamber 11. A magnetic field line package 9 is arranged at the connection point between the air inlet pipe 8 and the lead-out channel 7. The magnetic field line package 9 is connected to an alternating current with a frequency of 1-50Hz and a current of 1-10A. Under the action of the magnetic field, the ion beam 14 can fully collide with the gas that is easy to lose electrons to achieve effective charge (most of which can be) neutralized; at the same time, the ion beam 14 will be deflected under the action of the magnetic field in the pipeline, and the high-charged ions will easily overlap with the low-charged ions in the high-pressure magnetic channel, and the separation of the high-charged and low-charged states will not occur, which is conducive to the energy homogenization of the ion beam 14. When reaching the cold roller polymer, the ion energy is uniform in the width or length direction. A baffle 13 is arranged at the connection point between the lead-out channel 7 and the vacuum chamber 11. The anode cylinder 5 is provided with a suppression electrode 6, which can suppress the electrons in the plasma from being drawn into the vacuum chamber. The baffle 13 can cover the places at both ends of the rotating cold roller 12 that are not covered by the polymer to prevent the surface from being sputtered by ions. The gas introduced into the inlet pipe 8 is Ar or Kr, and the gas flow rate of the inlet pipe 8 is 30-50sccm and the gas pressure is 1×10 -2 -2×10 -1 Pa, too good a vacuum will lead to deviation in the static removal effect, and too poor a vacuum will lead to too small an ion free path, too large an energy loss, and affect the film quality. The material of the lead-out channel 7 is a high electron emissivity material, such as Ni or Fe, which can quickly neutralize excess ions.

[0024] In the polymer deposition device 1 with high charge in the neutralized ion beam 14 of this embodiment, partial gas ions are formed due to electron exchange in the air inlet pipe 8. When the gas ions reach the polymer surface, collision and cleaning will occur, thereby increasing the surface energy of the polymer. After the metal film is deposited, the gas ions can conveniently bombard the metal film layer, and the polymer deposited metal film layer has good density, reduced porosity, no obvious defects in the film layer, and high film-base bonding strength. There is no sparking during the deposition process of the high-energy ion beam 14, and the polymer will not be electrically damaged.

[0025] The present specification uses specific examples to illustrate the principles and implementation methods of the present invention. The above examples are only used to help understand the method and core idea of ​​the present invention. At the same time, for those skilled in the art, according to the idea of ​​the present invention, there will be changes in the specific implementation methods and application scope. In summary, the content of this specification should not be understood as limiting the present invention.

Claims

1. A polymer deposition device for neutralizing high charges in an ion beam, characterized in that: The invention comprises an extraction tube, an acceleration tube, an anode tube, an extraction channel and a vacuum chamber which are connected in sequence. An ion source arc head is arranged on the extraction tube. An air inlet pipe is connected with the extraction channel. The ion source arc head is used to emit an ion beam. The gas introduced into the air inlet pipe is Ar or Kr. A rotating cold roller is arranged in the vacuum chamber. The surface of the rotating cold roller is used to deposit a polymer film layer. A baffle is arranged at the connection between the extraction channel and the vacuum chamber. The material of the extraction channel is a material with high electron emission rate, and the material with high electron emission rate is Ni or Fe.

2. The polymer deposition device for neutralizing high charge in ion beam according to claim 1, characterized in that: Two vacuum molecular pumps are symmetrically arranged at one end of the outlet channel connected to the vacuum chamber.

3. The polymer deposition device for neutralizing high charge in ion beam according to claim 1, characterized in that: A magnetic field coil is provided at the connection point between the air inlet pipe and the outlet channel, and the magnetic field coil is connected to an alternating current, wherein the frequency of the alternating current is 1-50 Hz and the current is 1-10A.

4. The polymer deposition device for neutralizing high charge in ion beam according to claim 1, characterized in that: The anode cylinder is provided with a suppression electrode.

5. The polymer deposition device for neutralizing high charge in ion beam according to claim 1, characterized in that: The gas flow rate of the inlet pipe is 30-50 sccm and the gas pressure is 1×10 -2 -2×10 -1 Pa.

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